A mid-far infrared optical film based on potassium bromide film and a preparation method thereof

By alternately depositing zinc selenide and potassium bromide films on a CVD diamond substrate, a double-sided antireflection film system was designed, which solved the problem of insufficient ultra-wideband transmittance of the far-infrared window of CVD diamond and realized the application of efficient mid- and far-infrared optical thin films.

CN121721758BActive Publication Date: 2026-05-19SHANGHAI INSTITUTE OF TECHNICAL PHYSICS CHINESE ACADEMY OF SCIENCES
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Patent Information

Application Number
CN202610231780.3
Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Filing Date
2026-02-27
Publication Date
2026-05-19
Estimated Expiration
2046-02-27

AI Technical Summary

Technical Problem

Existing technologies struggle to achieve ultra-wideband anti-reflection at 5–28 μm in the far-infrared window of CVD diamond, and existing solutions suffer from insufficient transmittance in the long-wavelength band, failing to balance high transmittance, wide spectrum, and environmental adaptability.

Method used

A multilayer film structure with alternating deposition of zinc selenide and potassium bromide was designed, and antireflection film systems on both sides were constructed. Combined with alternating deposition process and ion source-assisted cleaning, mid- and far-infrared optical thin films based on potassium bromide thin films were prepared.

Benefits of technology

It achieves broad-spectral transmittance enhancement in the 5–28 μm band, with an average transmittance of 87.64% and a maximum transmittance of 91.44%, making it suitable for infrared astronomical observation, Earth radiation detection, and deep space exploration.

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Abstract

The application discloses a mid-far infrared optical film based on potassium bromide film and a preparation method thereof, and relates to far infrared waveband optical film technology. The mid-far infrared optical film comprises a substrate, a front anti-reflection film system and a back anti-reflection film system. The front anti-reflection film system is located on one side of the substrate, and the back anti-reflection film system is located on the other side of the substrate. The mid-far infrared optical film window is prepared by alternately depositing zinc selenide as a high-refractive-index film material and potassium bromide as a low-refractive-index film material. The mid-far infrared optical film based on potassium bromide film provided by the application can realize wide-spectrum anti-reflection in the far infrared waveband of 5-28 microns, the average transmittance is 87.64%, and the highest transmittance is 91.44%.
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