Shielding device and film forming apparatus

Abstract

A shutter device according to an embodiment of the present invention includes a housing having an opening, a plurality of shutter plates, and a plurality of drive units. The plurality of driving parts are connected with the plurality of shielding plates and are configured to change the postures of the plurality of shielding plates. At least a partial region of the opening portion is a passage region through which sputtering particles emitted from the target material pass. The plurality of driving parts are configured to change the state of the shutter to a closed state, a parallelized state, or an open state. In the occluded state, the plurality of shutters are arranged to occlude at least the passage region of the sputtered particles. In the parallelization state, a part of the plurality of shielding plates is disposed in the passing region of the sputtering particles and is disposed so that the flying directions of the sputtering particles are parallel. In the open state, the plurality of shielding plates are withdrawn from the passing region of the sputtering particles.

Description

Technical Field

[0001] This invention relates to a shielding device and a film-forming device.

[0002] This application claims priority based on Japanese Patent Application No. 2023-141340, filed on August 31, 2023, the contents of which are incorporated herein by reference. Background Technology

[0003] Traditionally, for example, in the film deposition process of semiconductor device fabrication, film deposition apparatuses using sputtering methods (hereinafter referred to as "sputtering apparatuses") have been used. In sputtering apparatuses used for this purpose, with the recent trend towards miniaturization of wiring patterns, there is a strong demand for film deposition with good coverage over the entire surface of the substrate to be processed, particularly for microvias and trenches with high aspect ratios (e.g., a depth-to-width ratio exceeding 3). In other words, there is a strong demand for increased coverage.

[0004] In a typical sputtering apparatus, as a first stage for ejecting sputtered particles from the target, a negative voltage (hereinafter referred to as ignition) is applied to the target disposed within a vacuum chamber filled with argon gas. This ionizes the sputtering gas (e.g., argon) and bombards the target, causing the sputtered particles to eject from the front of the target. For example, if sputtering is performed using a target formed from a wire-wound thin film material such as Ta and / or Cu, Ta atoms and / or Cu atoms eject from the target as sputtered particles. The ejected atoms adhere to the workpiece to be processed, forming a thin film. The substrate, which is the object to be deposited, is disposed opposite the target within the vacuum chamber at a predetermined interval.

[0005] Furthermore, in a DC magnetron sputtering apparatus, a magnetic field is formed on the front side of the target by a magnetic field generating unit (e.g., a permanent magnet) located on the back side of the target. In this state, by applying a negative voltage to the target, sputtered gas ions bombard the front side of the target, ejecting target atoms and secondary electrons. By causing these secondary electrons to orbit in the magnetic field formed on the front side of the target, the frequency of ionization bombardment between the sputtered gas (an inactive gas such as argon) and the secondary electrons is increased, thereby increasing the plasma density and enabling the formation of thin films (for example, see Patent Document 1).

[0006] Patent Document 1: Japanese Patent Application Publication No. 2008-47661

[0007] The inventors discovered that during film deposition in microvias and trenches, the film deposition process in the plasma-unstable phase immediately after applying a negative potential to the target significantly affects the aggregation of sputtered particles generated on the sidewalls of the microvias and trenches. This aggregation of sputtered particles is presumed to be due to the poor film quality formed by sputtered particles before plasma stabilization. The poor film quality in the initial phase affects the film deposition after plasma stabilization, resulting in poor film quality. Before the miniaturization of wiring patterns, the relatively small amount of film formed during ignition was not a problem due to the relatively thick film thickness. However, in recent years, due to the miniaturization of wiring patterns, the film thickness formed during ignition (at the time of ignition) has become non-negligible relative to the required film thickness.

[0008] In addition, it is known that a shielding device is inserted between the target and the workpiece to suppress film formation during the unstable phase of plasma. However, there are problems such as: plasma leakage and contamination of the chamber may occur when the shield is opened and closed; the opening of the shield is narrow; and the chamber needs to be enlarged if the opening of the shield is to be increased.

[0009] Furthermore, to improve coverage of micropores and trenches with high aspect ratios, it is preferable to parallelize the flight direction of the sputtered particles. Therefore, a collimator device needs to be installed in the chamber. However, sometimes it is unavoidable to have a large chamber. Summary of the Invention

[0010] In view of the above, the objective of the present invention is to provide a shielding device and a film forming device that can form a film with excellent coverage on micropores and trenches with high aspect ratio formed on a substrate without being affected by sputtered particles accumulated during ignition.

[0011] To address the aforementioned issues, the present invention employs the following structure.

[0012] One aspect of the present invention is a shielding device disposed in a film-forming apparatus for forming a coating on the surface of a workpiece by sputtering. The shielding device includes: a frame having an opening; a plurality of shielding plates, each having a base end and a front end, disposed inside the opening; and a plurality of driving units connected to the base end and the frame, corresponding one-to-one with the plurality of shielding plates, and configured to change the orientation of each of the plurality of shielding plates. At least a portion of the opening is a passage area through which sputtered particles emitted from a target pass. The plurality of driving units are configured to change to a closed state, a parallelized state, or an open state, wherein the closed state is a state in which the plurality of shielding plates are configured to at least block the passage area of ​​the sputtered particles; the parallelized state is a state in which a portion of the plurality of shielding plates is disposed in the passage area of ​​the sputtered particles and configured such that the flight direction of the sputtered particles is parallel; and the open state is a state in which the plurality of shielding plates are retracted from the passage area of ​​the sputtered particles.

[0013] In one aspect of the shielding device of the present invention, when the direction from the center of the opening toward the frame is set as the radial direction, the driving unit may include: a rotation drive shaft, the axis of which is oriented in the same direction as the radial direction, and which rotates the shielding plate; and an opening and closing mechanism that moves the front end of the shielding plate toward or away from the frame. The rotation drive shaft may be configured to change the posture of the shielding plate between the closed state and the parallelized state. The opening and closing mechanism may be configured to change the posture of the shielding plate between the parallelized state and the open state.

[0014] In one aspect of the shielding device of the present invention, the shielding plate may include a pair of long sides having a shape that approaches each other in a direction from the base end portion toward the front end portion. The shape of the shielding plate may be a shape that tapers at the front end portion from the base end portion toward the front end portion.

[0015] In one aspect of the shielding device of the present invention, a portion of the shielding plate may be a flat, plate-shaped portion. The flat portion may be a portion that at least overlaps with the passage area of ​​the sputtered particles in the parallelized state.

[0016] In one aspect of the shielding device of the present invention, the long side portion of the shielding plate may have a flange portion. The flange portion, in the closed state, can block the gap between the long side portion and the long side portions of other shielding plates adjacent to the shielding plate.

[0017] One aspect of the film-forming apparatus of the present invention is a film-forming apparatus for forming a coating on the surface of a workpiece by sputtering. The film-forming apparatus includes: a chamber housing the workpiece and a target material arranged opposite to each other, the target material being the base material for the coating; an exhaust unit for depressurizing the interior of the chamber; a magnetic field generating unit for generating a magnetic field in front of the sputtering surface of the target material; a power source for applying voltage to the target material; a gas inlet unit for introducing sputtering gas into the chamber; and a shielding device disposed between the target material and the workpiece. The shielding device is a shielding device of the aforementioned type.

[0018] The shielding device of the present invention includes a drive unit capable of changing the orientation of a plurality of shielding plates disposed inside an opening. This drive unit can change the orientation of the shielding plates to a closed state blocking the passage area of ​​sputtered particles, a parallel state aligning the flight direction of the sputtered particles, or an open state repelling them from the passage area of ​​the sputtered particles. In the closed state, sputtered particles do not adhere to the workpiece during ignition. In the parallel state, the shielding plates act as collimators for the sputtered particles, thereby enabling the formation of a highly covert film on holes or trenches with a large aspect ratio. In the open state, the increased number of sputtered particles passing through the shielding device increases the film formation rate. Therefore, excellent film coverage can be achieved on micropores and trenches with high aspect ratios formed on the workpiece without being affected by sputtered particles accumulating during ignition.

[0019] Furthermore, in the shielding device according to the present invention, the drive unit includes a rotary drive shaft and an opening / closing mechanism. Within the opening, the posture of the shield can be changed between a closed state and a parallel state via the rotary drive shaft. Additionally, the posture of the shield can be changed between a parallel state and an open state via the opening / closing mechanism. Therefore, it is unnecessary to move the shield outside the opening, thus enabling miniaturization of the shielding device.

[0020] Furthermore, in the shielding device according to the present invention, the shielding plate includes a pair of long sides having a shape that approaches each other in the direction from the base end to the front end. Further, the shielding plate is shaped such that it tapers towards the front end from the base end. Therefore, inside the opening, the posture can be changed without interference between two adjacent shielding plates via a drive unit connected to the base end.

[0021] Furthermore, in the shielding device according to the present invention, a portion of the shielding plate is a flat, plate-shaped portion. This flat portion overlaps at least with the passage area of ​​the sputtered particles in the parallelized state. Therefore, the shielding plate can function as a collimator. For micropores and trenches with high aspect ratios formed on the workpiece, a coating with superior coverage can be formed.

[0022] Furthermore, in the shielding device according to the present invention, the long side of the shielding plate has a flange. When in the closed state, the flange blocks the gap between the long side of the shielding plate and the long side of other shielding plates adjacent to it. Therefore, sputtered particles will not leak from the gaps in the shielding plates, thereby reliably preventing the accumulation of sputtered particles on the workpiece during ignition.

[0023] The film-forming apparatus according to the present invention, by including the shielding device of the present invention, is able to form films with excellent coverage over micropores and trenches formed on the workpiece with high aspect ratio without being affected by sputtered particles accumulated during ignition. Attached Figure Description

[0024] Figure 1 This is a cross-sectional schematic diagram of the film-forming apparatus of the first embodiment of the present invention viewed from the side.

[0025] Figure 2 This is a top view schematic diagram illustrating the shielding device according to the first embodiment of the present invention.

[0026] Figure 3A This is a diagram showing an example of a shielding plate included in the shielding device according to the first embodiment of the present invention, and is a perspective view viewed from the target side.

[0027] Figure 3B This is a diagram showing an example of a shielding plate included in the shielding device according to the first embodiment of the present invention, and is a perspective view viewed from the side of the object being processed.

[0028] Figure 4A This is a diagram showing the operation of the drive unit included in the shielding device according to the first embodiment of the present invention, and a schematic diagram showing the open state (parallelized state) of the shielding plate when viewed from the vertical direction.

[0029] Figure 4B This is a diagram showing the operation of the drive unit included in the shielding device according to the first embodiment of the present invention, and a schematic diagram showing the closed state (blocked state) of the shielding plate when viewed from the vertical direction.

[0030] Figure 5A This is a diagram showing the operation of the drive unit included in the shielding device according to the first embodiment of the present invention, and a schematic diagram showing the shielding plate in a retracted state (parallelized state) when viewed from the vertical direction.

[0031] Figure 5B This diagram illustrates the operation of the drive unit included in the shielding device according to the first embodiment of the present invention, and is a schematic diagram showing the state (open state) when the shielding plate approaches the frame of the shielding device when viewed from the vertical direction.

[0032] Figure 6AThis is a diagram illustrating the operation of the blocking device according to the first embodiment of the present invention, and is a top view showing the blocked state.

[0033] Figure 6B This is a diagram illustrating the operation of the blocking device according to the first embodiment of the present invention, and is a side view schematic diagram showing the blocked state.

[0034] Figure 7A This is a diagram illustrating the operation of the shielding device according to the first embodiment of the present invention, and a top view showing the parallelized state.

[0035] Figure 7B This is a diagram illustrating the operation of the shielding device according to the first embodiment of the present invention, and a side view showing the parallelized state.

[0036] Figure 8 This is a diagram illustrating the operation of the shielding device according to the first embodiment of the present invention, and is a top view showing the open state.

[0037] Figure 9 This is a cross-sectional schematic diagram of the film-forming apparatus of the second embodiment of the present invention viewed from the side.

[0038] Figure 10 This is a cross-sectional schematic diagram of the film-forming apparatus of the third embodiment of the present invention viewed from the side.

[0039] Figure 11 This is a cross-sectional schematic diagram of the film-forming apparatus according to the fourth embodiment of the present invention, viewed from the side. Detailed Implementation

[0040] In the description of embodiments of the present invention, the top side of the chamber constituting the film-forming device is sometimes referred to as "upper", "upper side", "above", etc., and the bottom side of the chamber is sometimes referred to as "lower", "lower side", "below", etc.

[0041] Regarding the definition of direction, the circumferential direction of the circular frame constituting the shielding device is sometimes simply referred to as the "circumferential direction." The radial direction of the circular frame is sometimes simply referred to as the "radial direction." In addition, the direction from the center of the opening of the frame towards the outside of the frame is sometimes simply referred to as the "radial direction."

[0042] In the accompanying drawings illustrating embodiments of the present invention, reference numerals X, Y, Z, X1, and Y1 are shown. Reference numeral Z represents a direction perpendicular to the surface on which the film-forming apparatus is disposed (Z direction), for example, a vertical direction. In other words, the vertical direction is the direction from the top to the bottom of the chamber. Reference numeral X represents a direction parallel to the surface on which the film-forming apparatus is disposed (X direction), and is orthogonal to the Z direction. Reference numeral Y represents a direction parallel to the surface on which the film-forming apparatus is disposed (Y direction), and is orthogonal to the Z direction. The X and Y directions are orthogonal to each other. The X and Y directions correspond to radial directions.

[0043] In reference Figure 4A , Figure 4B , Figure 4A and Figure 5B The description uses reference numerals X1 and Y1. Reference numeral X1 is the direction parallel to the surface where the film-forming apparatus is mounted (X1 direction), and is orthogonal to the Z direction. Reference numeral Y1 is the direction parallel to the surface where the film-forming apparatus is mounted (Y1 direction), and is orthogonal to the Z direction. The X1 and Y1 directions are orthogonal to each other.

[0044] The X1 direction is the direction in which the rotary drive shaft constituting the blocking device extends. The X1 direction is used to explain the operation of the blocking device in this embodiment, and the relationship between the X1 direction and the X direction is not particularly limited. For example, the X1 direction may be inclined relative to the X direction, or it may be parallel to the X direction. When the X1 direction is inclined relative to the X direction, the inclination angle between the X1 direction and the X direction is not limited. The X1 direction may be aligned with the radial direction, or it may not be aligned with the radial direction.

[0045] In the following description, ordinal numbers such as "first" and "second" are sometimes used. These ordinal numbers do not indicate the number of components listed. Sometimes, ordinal numbers are used to indicate that each of a plurality of components is an independent component. For example, sometimes one of two adjacent shields, shield 23, is referred to as the first shield, and the other as the second shield. Alternatively, a plurality of shields arranged circumferentially may be referred to as "first shield," "second shield," ..., "Nth shield." In this case, N is a natural number greater than 2. In this embodiment, as an example, the number of shields is 8 (N=8).

[0046] The statement "opposite" indicates the positional relationship between two components. This relationship not only means the two components are opposite each other, but also that other components are positioned between them. The same interpretation applies to the words "set up," "configure," and "connect."

[0047] <First Implementation Method>

[0048] The film-forming apparatus 1 and the shielding device 21 of the first embodiment of the present invention will be described below.

[0049] like Figure 1 As shown, the film deposition apparatus 1 is an apparatus for forming a film by sputtering. The film deposition apparatus 1 uses DC magnetron sputtering. Furthermore, the film deposition apparatus 1 is a downward deposition type sputtering apparatus. The film deposition apparatus 1 includes a chamber 2. A vacuum environment can be generated within the interior space of the chamber 2. The chamber 2 houses a substrate W (the object to be processed) and a target 3. A cathode unit C is mounted on the top of the chamber 2.

[0050] The cathode unit C includes a target 3. The target 3 is mounted on a support 5. Further, the cathode unit C has a magnetic field generating section (not shown) built in front of the sputtering surface (lower surface) 3a of the target 3, which generates a tunnel-like magnetic field. The target 3 is the base material for forming a coating on a substrate W (the object to be processed). The target 3 is made of a material appropriately selected according to the composition of the thin film to be formed on the substrate W (the object to be processed), such as Cu, Ti, Al, and / or Ta. The shape of the target 3 corresponds to the shape of the substrate W to be processed. For example, the target 3 is manufactured into a predetermined shape (e.g., circular in plan view) by a known method, such that the area of ​​the sputtering surface 3a is larger than the surface area of ​​the substrate W. Additionally, the target 3 is electrically connected to a DC power supply (sputtering power supply) having a known structure (not shown). Thus, a predetermined negative potential (voltage) is applied to the target 3.

[0051] A magnetic field generating unit, which is not shown in the diagram and is integrated into the cathode unit C, is disposed on the surface (upper surface) of the target 3 opposite to the sputtering surface 3a. The magnetic field generating unit has a yoke (not shown) and multiple magnets (not shown). The yoke is arranged parallel to the target 3. The multiple magnets are disposed on the lower surface of the yoke. Regarding the polarity of each of the multiple magnets, the multiple magnets are arranged in such a way that the polarities of the magnet faces facing the target 3 are different. It should be noted that the shape and / or number of magnets are appropriately selected from the viewpoint of improving the stability of the discharge and / or the utilization efficiency of the target, based on the magnetic field to be formed in front of the target 3. For example, sheet-shaped or rod-shaped magnets can be used, or multiple magnets with such shapes can be appropriately combined. Furthermore, the magnetic field generating unit can also be configured to reciprocate and / or rotate on the back side of the target 3.

[0052] A worktable 10, facing the target 3, is disposed at the bottom of chamber 2. The worktable 10 is configured to position and hold the substrate W. Additionally, a gas pipe (gas inlet, not shown) for introducing sputtering gases such as argon is connected to the side wall of chamber 2. The other end of the gas pipe is connected to a gas source via a mass flow controller (not shown). Furthermore, an exhaust pipe 12a is connected to chamber 2. The exhaust pipe 12a is connected to an exhaust unit (vacuum exhaust unit, vacuum exhaust device), which is composed of a turbomolecular pump and / or a rotor pump, not shown. The exhaust unit depressurizes the interior of chamber 2.

[0053] The shielding device 21 is disposed between the substrate W and the target 3. For example... Figure 2 As shown, the blocking device 21 includes a frame 22, a plurality of blocking plates 23, and a plurality of drive units 24. In other words, the blocking device 21 can be referred to as a blocking mechanism. The frame 22 has an opening 22a. The plurality of blocking plates 23 are disposed inside the opening 22a. The plurality of drive units 24 correspond one-to-one with the plurality of blocking plates 23. One of the blocking plates 23 connects the frame 22 to the plurality of blocking plates 23. The plurality of drive units 24 are configured to change the posture of the plurality of blocking plates 23 to a closed state, a parallelized state, or an open state. In other words, by changing the posture of one blocking plate 23 by one drive unit 24, the plurality of drive units 24 change the posture of the plurality of blocking plates 23 in general.

[0054] Multiple drive units 24 are each controlled by a control device (not shown). The control device includes, for example, a processing unit, a storage unit, and a communication unit. Within the control device, the processing unit can perform information processing based on a program stored in the storage unit, or it can perform information processing based on information input to the communication unit from an external device of the control device. The control device provides drive signals corresponding to the calculation results of the processing unit to the multiple drive units 24, and the drive units 24 change the posture of the multiple baffles 23 based on the drive signals.

[0055] Here, the occlusion state is the state in which the baffle 23 is configured to at least block the passage area PA of sputtered particles. The occlusion state is... Figure 2 , Figure 6A and Figure 6B The state shown. The parallelization state is a state in which a portion of the shield 23 is disposed in the passage area PA of the sputtered particles and configured such that the flight direction of the sputtered particles is parallel. The parallelization state is Figure 7A and Figure 7B The state shown. Additionally, the open state is the state in which the shield 23 is retracted from the area PA through which the sputtered particles pass. The open state is... Figure 8 The state shown is as follows. The area PA through which the sputtered particles pass will be described later.

[0056] like Figure 1 and Figure 2 As shown, the frame 22 has an annular shape. The frame 22 has an opening 22a communicating with the space exposed by the target 3 (first space) and the space exposed by the substrate W (second space). In other words, the opening 22a extends through the frame 22. At least a portion of the opening 22a is designated as a passage region PA through which sputtered particles emitted from the target pass. The passage region PA is... Figure 2 The inner region is indicated by a single-dotted line. Among the sputtered particles ejected from the sputtering zone, those that pass through the passage region PA have a higher probability of reaching the substrate W (the object to be processed) compared to other sputtered particles. Furthermore, sputtered particles ejected from the sputtering zone can pass through areas deviating from the passage region PA without issue. However, sputtered particles deviating from the passage region PA have a lower probability of reaching the substrate W (the object to be processed) compared to those passing through the passage region PA. The range of the passage region PA depends on the size of the target 3, the size of the substrate W (the object to be processed), the distance between the target 3 and the substrate W, etc.

[0057] Furthermore, a drive mechanism (not shown) is built inside the annular frame 22. The drive mechanism is a combination of known mechanical elements, forming the drive unit 24.

[0058] exist Figure 3A and Figure 3B The image shows a perspective view of the shield 23. Figure 3A This is a three-dimensional schematic diagram of the shielding plate 23 as viewed from the target material 3. Figure 3B This is a perspective view of the substrate W (the object being processed). The shielding plate 23 is plate-shaped. The shielding plate 23 has a base end portion 231, a front end portion 232, and a pair of long sides 233. The pair of long sides 233 have a shape that approaches each other in the direction from the base end portion 231 toward the front end portion 232. In other words, Figure 2 The plurality of baffles 23 shown are arranged along the circumferential direction of the circular frame 22, so that a pair of long sides 233 are formed close to each other in the radial direction of the frame 22. The pair of long sides 233 correspond to the two ends of the baffles 23 in the circumferential direction of the frame 22. The overall shape of the baffles 23 is a shape that tapers towards the front end 232 from the base end 231. In other words, the width of the baffles 23 in the circumferential direction of the frame 22 gradually decreases in the radial direction from the base end 231 to the front end 232. The shape of the base end 231 is generally arcuate when viewed from above. The shape of the base end 231 corresponds to the shape of the opening 22a of the frame 22. The shape of the front end 232 is acute-angled. When the baffles 23 are in the closed state, the front end 232 is located approximately at the center O of the opening 22a.

[0059] The shield 23 has a curved portion 234 and a flat portion 235. The curved portion 234 is located closer to the base end 231 than the front end 232. The flat portion 235 is located closer to the front end 232 than the base end 231. The flat portion 235 is flat in shape. The flat portion 235 is the portion that overlaps with the passage area PA of the sputtered particles when the shield 23 is in a parallel orientation. A boundary portion is provided between the curved portion 234 and the flat portion 235. The radial distance between the front end 232 and the boundary portion is equivalent to the radial size of the passage area PA. The boundary portion is a boundary line extending radially in an arc-shaped manner. The curved portion 234 is formed to be inclined relative to the flat portion 235 from the boundary line. The curved portion 234 can also be referred to as a conical surface.

[0060] like Figure 3B As shown, a non-through hole for the shielding plate 23 is formed on the surface of the flat portion 235 opposite to the substrate W. This non-through hole is provided to achieve a lightweight design of the shielding plate 23, and can also be referred to as a lightweight portion. Figure 3B In the example shown, there are three non-through holes, but the number of non-through holes is not limited. If the weight of the baffle 23 is sufficiently light, or if it is necessary to reduce the processing cost of the baffle 23, non-through holes may not be provided.

[0061] The long side 233 of the flat portion 235 of the baffle plate 23 has a flange 236. The flange 236 is provided to block the gap between the long side 233 of the baffle plate 23 (first baffle plate) and the long side 233 of the adjacent other baffle plate 23 (second baffle plate) when the baffle plate is closed.

[0062] In addition, such as Figure 3A and Figure 3B As shown, a plate-shaped arm 241 is mounted on the base end 231 of the baffle plate 23. The arm 241 forms part of the drive unit 24. Figure 3A and Figure 3B In the middle, the arm portion 241 is mounted on the circumferential end (one end side) of the base end portion 231. The position of the arm portion 241 is not limited to... Figure 3A and Figure 3B The structure shown. Arm 241 can also be located at the center of base end 231. Arm 241 can also be located within base end 231, in conjunction with... Figure 3A and Figure 3B On the opposite side of the position shown.

[0063] Next, the drive unit 24 will be explained.

[0064] like Figure 2As shown, the drive unit 24 connects the base ends 231 of each of the baffle plates 23 to the frame 22. The drive unit 24 drives the baffle plates 23. The drive unit 24 is configured to change the posture of the baffle plates 23. As described above, the drive unit 24 is configured to change the posture of the baffle plates 23 to a closed state, a parallel state, or an open state. The drive unit 24 has a drive mechanism (not shown). The drive mechanism may include, for example, a rotating mechanism that rotates the baffle plates 23 about a rotation axis, and a moving mechanism that moves the rotation axis. Examples of rotating and moving mechanisms include, for example, a cylinder linear motion mechanism, a rack and pinion mechanism, a crank mechanism, a gear mechanism, a spring mechanism, a ball screw, and a guide rail.

[0065] The drive unit 24 has a rotation axis. The rotation axis extends radially. In other words, the rotation axis extends from the base end 231 of the cover plate 23 toward the front end 232. By rotating the rotation axis, the drive unit 24 can rotate the cover plate 23 about the rotation axis. It should be noted that the structure of the drive unit 24 is not particularly limited as long as it can achieve the function of changing the direction of the cover plate 23 from the base end 231 toward the front end 232 relative to the frame 22.

[0066] More specifically, as an example, one can consider a case where the direction of the baffle 23 from its base end 231 toward its front end 232 is approximately the same as the radial direction from the center O of the opening 22a toward the frame 22. In this case, it is sufficient that the baffle 23 can be rotated by rotating the rotation axis in the direction from its base end 231 toward its front end 232; and that the direction of the baffle 23 from its base end 231 toward its front end 232 can be changed from the state toward the center O of the opening 22a to the state along the circumferential direction of the frame 22.

[0067] It should be noted that the extension direction of the rotating shaft may not be consistent with the radial direction. As long as the drive unit 24 can operate, the extension direction of the rotating shaft is not limited.

[0068] Next, refer to Figure 4A , Figure 4B , Figure 4A and Figure 5B The drive unit 24 will now be described. The drive unit 24 preferably includes a rotary drive shaft 242 and an opening and closing mechanism 25.

[0069] exist Figure 4A , Figure 4B , Figure 4A and Figure 5BAlthough the X1 and Y1 directions are used to illustrate one example of the operation of the drive unit 24, they do not limit the posture and / or position of the baffle 23. The dashed line indicated by reference numeral 22 conveniently shows the frame 22 of the baffle device 21. This dashed line is shown to facilitate understanding of the relationship between the frame 22 and the drive unit 24 in the X1, Y1, and Z directions.

[0070] For example, the axial direction of the rotary drive shaft 242 is the same as the radial direction of the opening 22a. That is, the rotary drive shaft 242 extends along the X1 direction. The rotary drive shaft 242 is configured to rotate the baffle 23. That is, the rotary drive shaft 242 is configured to rotate the baffle 23 about the X1 direction. The opening and closing mechanism 25 is configured to bring the front end 232 of the baffle 23 closer to or away from the frame 22. That is, the opening and closing mechanism 25 is configured to move the baffle 23 in a plane parallel to the X1 and Y1 directions. In other words, the opening and closing mechanism 25 is configured to rotate the baffle 23 about an axis parallel to the Z direction.

[0071] A rotary drive shaft 242 protrudes from the frame 22 toward the center of the opening 22a. The rotary drive shaft 242 can be rotated by a drive mechanism (not shown) built into the frame 22. The rotary drive shaft 242 is mounted to the base end 231 of the baffle 23 via a first joint 251 and an arm 241. The rotary drive shaft 242 is configured to change the orientation of the baffle 23 between a closed state and a parallelized state.

[0072] The opening and closing mechanism 25 includes an arm 241, a rotary drive shaft 242, a first joint 251, a second joint 252, and an opening and closing drive shaft 253. The arm 241 is mounted to the base end 231 of the baffle plate 23. The rotary drive shaft 242 has the structure described above. The first joint 251 is disposed between the arm 241 and the rotary drive shaft 242. The first joint 251 is mounted between the rotary drive shaft 242 and the arm 241. The first joint 251 allows the extension direction of the arm 241 to be inclined relative to the extension direction of the rotary drive shaft 242. The first joint 251 is, for example, a hinge having an axis parallel to the Z-direction.

[0073] The second joint 252 is mounted between the opening / closing drive shaft 253 and the arm 241. The second joint 252 allows the extension direction of the arm 241 to be tilted relative to the extension direction of the opening / closing drive shaft 253. The second joint 252 is, for example, a hinge with an axis parallel to the Z direction.

[0074] The opening / closing drive shaft 253 is arranged substantially parallel to the rotary drive shaft 242. That is, the opening / closing drive shaft 253 extends along the X1 direction. The opening / closing drive shaft 253 is connected to a drive mechanism (not shown) built into the frame 22. The opening / closing drive shaft 253 is configured to move forward and backward along its length direction (X1 direction) by being driven by the drive mechanism. The opening / closing drive shaft 253 is configured, for example, to move linearly in a direction parallel to the radial direction. The opening / closing mechanism 25 is configured to change the posture of the baffle 23 between a parallel state and an open state. Examples of structures for the drive mechanism that operates the opening / closing drive shaft 253 include, for example, a cylinder linear motion mechanism, a rack and pinion mechanism, a crank mechanism, a gear mechanism, a spring mechanism, a ball screw, a guide rail, etc.

[0075] In this opening and closing mechanism 25, the opening and closing drive shaft 253 moves relative to the rotation drive shaft 242 in the length direction of the opening and closing drive shaft 253. The arm 241 is tilted relative to the rotation drive shaft 242 in the rotational direction about the first joint 251, and the arm 241 is tilted relative to the opening and closing drive shaft 253 in the rotational direction about the second joint 252. Thus, the opening and closing mechanism 25 is configured to bring the baffle 23 closer to or further away from the frame 22.

[0076] The operation of the drive unit 24 will be explained.

[0077] like Figure 4A and Figure 4B As shown, if the rotary drive shaft 242 is rotated around the X1 direction, the baffle 23 will rotate about the rotary drive shaft 242 as an axis, thereby changing the posture of the baffle 23.

[0078] In addition, such as Figure 5A and Figure 5B As shown, if the opening / closing drive shaft 253 of the opening / closing mechanism 25 is moved forward or backward in the X1 direction, the orientation of the arm 241 changes about the first joint 251 as the rotation axis. That is, if the opening / closing drive shaft 253 moves in the X1 direction, the posture of the arm 241 changes from a posture facing the X1 direction to a posture facing the Y1 direction. Along with this, the posture of the baffle 23 also changes from a posture facing the X1 direction (…). Figure 5A Change to a posture facing the Y1 direction. Figure 5B ).

[0079] Conversely, if the opening / closing drive shaft 253 moves in the opposite direction to X1, the posture of the arm 241 changes from a posture facing Y1 to a posture facing X1. Simultaneously, the posture of the baffle 23 also changes from a posture facing Y1 (…). Figure 5B ) Change to a posture facing the X1 direction ( Figure 5A ).

[0080] Due to such Figure 4A , Figure 4B , Figure 4A and Figure 5B As shown, the operation of the drive unit 24 can be realized, therefore it can be as shown Figures 6A to 8 As shown, the poses of the multiple shields 23 are set to closed, parallel, and open states.

[0081] That is, in Figure 6A and Figure 6B In the blocked state shown, the direction of each baffle plate 23 from its base end 231 toward its front end 232 is toward the center O of the opening 22a. The front end 232 of each baffle plate 23 is located at the center O of the opening 22a. Further, the directions of the plurality of baffle plates 23 are aligned so that the plurality of baffle plates 23 respectively block the opening 22a. Regarding two adjacent baffle plates 23, the long side 233 (first long side) of one baffle plate 23 (first baffle plate) is close to the long side 233 (second long side) of the other baffle plate 23 (second baffle plate).

[0082] However, to prevent particle generation, two adjacent baffles 23 are configured with their long sides 233 not touching, separated by a small gap. In this case, to prevent sputtered particles from leaking from the gap between the two long sides 233 to the workpiece side, the flange 236 provided on the long side 233 is configured to overlap with the other long side 233. Thus, the gap is blocked while the long sides 233 are not in contact with each other.

[0083] If the drive shaft 242 is operated from such a blocked state to rotate the direction of the baffle 23, then it becomes Figure 7A and Figure 7B The parallelization state is shown. In the parallelization state, a portion (flat portion 235) of each baffle 23 is located in the sputtering particle passage area PA. In this position, the long side portion 233 of the baffle 23 is opposite to the target 3 and the workpiece W. Thus, the baffle 23 acts as a collimator, and when the sputtering particles pass through the baffle 23, the flight directions of the sputtering particles are aligned in a parallel manner.

[0084] Furthermore, if the opening / closing mechanism 25 is operated from the parallel state, causing the front end 232 of the baffle 23 to tilt towards the frame 22, then it becomes Figure 8 The open state is shown. In the open state, the direction of the baffle 23 from the base end 231 toward the front end 232 is along the circumferential direction of the opening 22a. As a result, the front end 232 of the baffle 23 is brought close to the frame 22. As a result, the baffle 23 is repelled from the sputtering particle passage area PA of the opening 22a.

[0085] Next, the film formation performed using the film-forming apparatus 1 as described above will be explained.

[0086] First, operate the vacuum exhaust unit to evacuate the internal space of chamber 2 until the vacuum level inside chamber 2 reaches a specified level (e.g., a pressure on the order of 10⁻⁵ Pa). Then, after the pressure inside chamber 2 reaches the specified value, place the substrate W on the worktable 10. Further, as... Figure 6A and Figure 6B As shown, the shielding plate 23 of the shielding device 21 is set to a closed state. Gas (sputtering gas) is introduced into the interior space of the chamber 2 at a predetermined flow rate. In this state, a predetermined negative potential (power supply) is applied to the target material 3 from a DC power supply to generate a plasma environment within the chamber 2. In this case, electrons ionized in front of the sputtering surface 3a and secondary electrons generated by sputtering are captured by the magnetic field from the magnetic field generating unit, generating a high-density plasma in front of the sputtering surface 3a.

[0087] Argon ions in the plasma bombard the sputtering surface 3a, causing it to sputter. Sputtered atoms and / or sputtered ions (sputtered particles) are dispersed from the sputtering surface 3a toward the substrate W. During this stage, because the shielding device 21 is in a closed state, the sputtered particles only adhere to the shielding plate 23 and do not reach the substrate W.

[0088] During the initial sputtering phase and after the plasma has stabilized, the rotation drive shaft 242 of the operation drive unit 24 changes from a closed state to a parallel state. This exposes the substrate W to the target material 3. Additionally, the shielding plate 23 acts as a collimator. As a result, sputtered particles reach the substrate W and begin film formation. In particular, when using a Cu target, self-holding discharge is possible. Therefore, after ignition by introducing sputtering gas, the introduction of sputtering gas into the interior space of the chamber 2 can be stopped, and after the plasma stabilizes, the shielding device 21 can be changed from a closed state to a parallel state, and film formation on the substrate W can begin. If film formation is performed in the parallel state, the flight direction of the sputtered particles is paralleled by the flat portion 235 of the shielding plate 23. Therefore, the sputtered particles reach the interior of the high aspect ratio holes and / or trenches provided in the substrate W, thereby improving the coverage of the coating.

[0089] Alternatively, at the end of the initial sputtering stage and during the plasma stabilization stage, the rotary drive shaft 242 of the operation drive unit 24 and the opening / closing mechanism 25 can be transferred from a closed state to an open state via a parallelization state. This exposes the substrate W to the target material 3. Consequently, sputtered particles reach the substrate W, and film formation begins. If film formation is performed in the open state, although the flight direction of the sputtered particles becomes disordered, the sputtered particles easily reach the substrate W, thus increasing the film formation rate.

[0090] As explained above, the shielding device 21 of the first embodiment includes a drive unit 24, which can change the posture of the plurality of shielding plates 23 disposed inside the opening 22a. This drive unit 24 is configured to change the posture of the shielding plates 23 to a closed state that blocks the passage area PA of sputtered particles, a parallelized state that parallelizes the flight direction of the sputtered particles, or an open state that retracts from the passage area PA of the sputtered particles. In the closed state, sputtered particles do not adhere to the substrate W during ignition. In the parallelized state, the shielding plates 23 act as collimators for the sputtered particles, thereby enabling the formation of a highly covert film on holes or trenches with a large aspect ratio. In the open state, the film formation rate can be increased by increasing the number of sputtered particles from the shielding device 21. Therefore, it is possible to form a film with excellent coverage on each micropore and trench with a high aspect ratio formed on the workpiece without being affected by sputtered particles accumulated during ignition.

[0091] Furthermore, in the blocking device 21 of the first embodiment, the drive unit 24 includes a rotary drive shaft 242 and an opening / closing mechanism 25. Within the opening 22a, the posture of the blocking plate 23 can be changed between a closed state and a parallel state via the rotary drive shaft 242. Additionally, the posture of the blocking plate 23 can be changed between a parallel state and an open state using the opening / closing mechanism 25. Therefore, it is not necessary to move the blocking plate 23 to the outside of the opening 22a, thus enabling the blocking device 21 to be miniaturized.

[0092] Furthermore, according to the blocking device 21 of the first embodiment, the blocking plate 23 has a base end portion 231, a front end portion 232, and a pair of long side portions 233 adjacent to each other. Further, in the direction from the base end portion 231 toward the front end portion 232, the shape of the blocking plate 23 is a shape that tapers at the front end. Therefore, inside the opening 22a, the posture of the blocking plate 23 can be changed without interfering with the two adjacent blocking plates 23 by means of the drive portion 24 connected to the base end portion 231.

[0093] Furthermore, according to the shielding device 21 of the first embodiment, the portion of the shielding plate 23 that overlaps with the passage area PA of the sputtered particles in the parallelized state is a flat plate. Therefore, the shielding plate 23 can function as a collimator. Thus, a coating with superior coverage can be formed on each micropore and trench with a high aspect ratio formed on the substrate W (the workpiece).

[0094] Furthermore, according to the shielding device 21 of the first embodiment, a flange portion 236 is provided on the long side portion 233 of the shielding plate 23. The flange portion 236 is used to block the gap between the shielding plate 233 and other adjacent long side portions 233 when in a closed state. Therefore, sputtered particles will not leak from the gap of the shielding plate 23, thereby reliably preventing sputtered particles from accumulating on the substrate W (the workpiece) during ignition.

[0095] According to the film-forming apparatus 1 equipped with the shielding device 21 of the first embodiment, it is possible to form films with excellent coverage over micropores and trenches with high aspect ratios formed on the substrate W without being affected by sputtered particles that accumulate during ignition.

[0096] <Variation Example>

[0097] The following describes variations related to the posture and / or orientation of the shielding device 21.

[0098] When the blocking device 21 is in a blocked state, the blocking device 21, which consists of multiple blocking plates 23, is in Figure 1 and Figure 6B The cross-sectional view shown has a roughly U-shaped or cup-shaped appearance.

[0099] The posture and / or orientation of the shielding device 21 are not limited to Figure 1 and Figure 6B The example shown. As a variation of the shielding device 21, the posture and / or orientation of the shielding device 21 can also be set in a manner that gives it a generally inverted U-shape or inverted cup shape when viewed in section. In such a variation, Figure 3A This is a three-dimensional schematic diagram of the shielding plate 23 as viewed from the substrate W. Figure 3B This is a three-dimensional schematic diagram viewed from the target material 3. A variation of this shielding device 21 can achieve the same effect as described above. It should be noted that this variation can also be applied to other embodiments described later.

[0100] <Other Implementation Methods>

[0101] In the shielding device 21 of the first embodiment described above, the state of the shielding plate 23 is changed to a closed state, a parallelized state, or an open state by driving multiple driving units 24. The device to which the shielding device 21 can be applied is not limited to the film-forming apparatus 1 described above, but can also be applied to other film-forming apparatuses described below.

[0102] In the following description Figures 9-11 In this document, components that are identical to those in the first embodiment described above are marked with the same reference numerals, and their descriptions are omitted or simplified.

[0103] <Second Implementation Method>

[0104] Although the film-forming apparatus 1 described above is a downward deposition type sputtering apparatus, the shielding device 21 of the embodiments of the present invention can also be applied to an upward deposition type sputtering apparatus.

[0105] Figure 9 The film deposition apparatus 1A shown is an upward deposition type sputtering apparatus. In the film deposition apparatus 1A, a cathode unit C is disposed at the bottom of the chamber 2. The cathode unit C includes a target material 3. A stage 10 is disposed at the top inside the chamber 2. The stage 10 holds the substrate W. A shielding device 21 is disposed between the substrate W and the target material 3.

[0106] The film-forming apparatus 1A with this structure uses the shielding device 21 in the same way as in the first embodiment described above, thus changing the state of the shielding plate 23 to a closed state, a parallelized state, or an open state. As a result, excellent film coverage can be achieved on each micropore and trench with a high aspect ratio formed on the workpiece without being affected by sputtered particles accumulated during ignition. Therefore, the same effects described in the first embodiment can be obtained.

[0107] <Third Implementation Method>

[0108] Although the above-mentioned film-forming apparatus 1 is an apparatus that uses DC magnetron sputtering, the shielding device 21 of the embodiments of the present invention is not limited to film-forming apparatuses using magnetron sputtering, and can also be applied to vapor deposition apparatuses.

[0109] Figure 10 The film deposition apparatus 1B shown is a vapor deposition apparatus. The film deposition apparatus 1B includes a vapor deposition material 50, a crucible 51, and an electron gun 52. The vapor deposition material 50 and the crucible 51 constitute a vapor deposition source. The vapor deposition material 50, the crucible 51, and the electron gun 52 are disposed at the bottom of the chamber 2. The electron gun 52 can generate an electron beam BM toward the crucible 51, causing the vapor deposition material 50 to evaporate. A shielding device 21 is disposed between the substrate W and the vapor deposition material 50. According to the film deposition apparatus 1B with this structure, the evaporated vapor deposition material 50 reaches the substrate W via the shielding device 21. The vapor deposition material 50 can be deposited on the surface of the substrate W, forming a thin film on the substrate W.

[0110] The film-forming apparatus 1B with this structure uses the same shielding device 21 as in the first embodiment described above, thus changing the state of the shielding plate 23 to a closed state, a parallelized state, or an open state. As a result, excellent film coverage can be achieved on the micropores and trenches with high aspect ratios formed on the workpiece without being affected by the vapor deposition material 50 deposited on the substrate W during ignition in the vapor deposition apparatus. Therefore, the same effects described in the first embodiment can be obtained.

[0111] <Fourth Implementation Method>

[0112] The shielding device 21 of the present invention can also be applied to CVD (Chemical Vapor Deposition) apparatus.

[0113] Figure 11 The film-forming apparatus 1C shown is a CVD apparatus. The film-forming apparatus 1C includes a first material supply source 60, a second material supply source 61, a material supply channel 62, and a nozzle 63. The nozzle 63 is positioned near the inner top of the chamber 2. A worktable 10 is disposed at the bottom of the chamber 2, opposite the nozzle 63. The first material supply source 60 and the second material supply source 61 supply raw material gases to the nozzle 63 via the material supply channel 62. The types of raw material gases in each of the first material supply source 60 and the second material supply source 61 are selected according to the type of thin film to be formed on the substrate W. The nozzle 63 can provide energy to the raw material gases, causing a chemical reaction in the raw material gases emitted from the nozzle 63. Here, "providing energy to the raw material gases to cause a chemical reaction" means, for example, providing energy such as heat, plasma, or light to the raw material gases to cause a chemical reaction. In this embodiment, plasma is generated between the nozzle 63 and the substrate W, and the raw material gases undergo a chemical reaction through the plasma. That is, the film-forming apparatus 1C is a plasma CVD apparatus.

[0114] A shielding device 21 is disposed between the substrate W and the nozzle 63. According to the film-forming apparatus 1C with this structure, a chemical reaction occurs in the raw material gas emitted from the nozzle 63, and the raw material gas reaches the substrate W via the shielding device 21. Based on the accumulation of reactants from the raw material gas on the surface of the substrate W, a thin film can be formed on the substrate W.

[0115] The film-forming apparatus 1C with this structure uses the same shielding device 21 as in the first embodiment described above, thus changing the state of the shielding plate 23 to a closed state, a parallelized state, or an open state. As a result, excellent film coverage can be achieved on the micropores and trenches with high aspect ratios formed on the workpiece without being affected by the vapor-deposited material 50 deposited on the substrate W during ignition in the CVD apparatus. Therefore, the same effects described in the first embodiment can be obtained.

[0116] In this embodiment, a plasma CVD apparatus equipped with the shielding device 21 has been described. The shielding device 21 is not limited to plasma CVD apparatuses; for example, it can also be applied to thermal CVD apparatuses, plasma CVD apparatuses, photocatalytic CVD apparatuses, MOCVD (Metalorganic Chemical Vapor Deposition) apparatuses, etc.

[0117] In this CVD apparatus, a shielding device 21 is disposed at a position separated from the film-forming surface of the substrate. In other words, the shielding device 21 is disposed on the flow path of the raw material gas flowing toward the film-forming surface of the substrate.

[0118] Preferred embodiments of the present invention have been described. While these embodiments have been described above, it should be understood that they are exemplary embodiments of the invention and should not be considered limiting. Additions, omissions, substitutions, and other modifications may be made without departing from the scope of the invention. Therefore, the present invention should not be considered as limited by the foregoing description.

[0119] Explanation of reference numerals in the attached figures

[0120] 1, 1A, 1B, 1C: Film-forming apparatus

[0121] 2: Chamber

[0122] 3: Target Material

[0123] 21: Shielding device

[0124] 22: Frame

[0125] 22a: Opening

[0126] 23: Blindfold

[0127] 24: Drive Unit

[0128] 25: Opening and closing mechanism

[0129] 50: Evaporation materials

[0130] 51: Crucible

[0131] 52: Electron Gun

[0132] 60: Primary source of material supply

[0133] 61: Second source of material supply

[0134] 62: Material Supply Channel

[0135] 63: Sprayer head

[0136] 231: Base end

[0137] 232: Front end

[0138] 233: Long side

[0139] 235: Flat area

[0140] 236: Flange portion

[0141] 242: Rotary drive shaft

[0142] O: Center of the opening

[0143] PA: Through the area

[0144] W: Substrate (the object being processed)

Claims

1. A shielding device, disposed in a film-forming apparatus for forming a coating on the surface of a workpiece by sputtering, the shielding device comprising: The frame has an opening; Multiple baffles, each having a base end and a front end, are disposed inside the opening; as well as Multiple drive units are respectively connected to the base end and the frame and correspond one-to-one with the multiple baffles, and are configured to change the posture of each of the multiple baffles. At least a portion of the opening is a passageway for sputtered particles emitted from the target. The plurality of drive units are configured to change to a blocked state, a parallelized state, or an open state, wherein the blocked state is a state in which the plurality of shields are configured to at least block the passage area of ​​the sputtered particles, the parallelized state is a state in which a portion of the plurality of shields is configured in the passage area of ​​the sputtered particles such that the flight direction of the sputtered particles is parallel, and the open state is a state in which the plurality of shields are retracted from the passage area of ​​the sputtered particles.

2. The shielding device according to claim 1, wherein, When the direction from the center of the opening toward the frame is set as the radial direction... The drive unit includes: A rotary drive shaft, the axis of which is oriented in the same direction as the radial direction, rotates the baffle plate; and An opening and closing mechanism that allows the front end of the baffle to approach or move away from the frame. The rotary drive shaft is configured to change the orientation of the baffle between the blocked state and the parallelized state. The opening and closing mechanism is configured to change the posture of the baffle between the parallel state and the open state.

3. The shielding device according to claim 1, wherein, The baffle includes a pair of long sides having a shape that approaches each other in the direction from the base end toward the front end. The shape of the baffle plate is a shape that tapers from the base end towards the front end.

4. The shielding device according to claim 3, wherein, A portion of the baffle is a flat, plate-shaped flat section. The flat portion is the portion that, in the parallelized state, at least overlaps with the passage area of ​​the sputtered particles.

5. The shielding device according to claim 4, wherein, The long side of the baffle plate has a flange. When the flange is in the closed state, it blocks the gap between the long side and the long side of other baffles adjacent to the baffle.

6. A film-forming apparatus for forming a coating on the surface of a workpiece by sputtering, the film-forming apparatus comprising: A chamber for housing the workpiece and the target material arranged opposite to each other, the target material being the base material for the coating; The exhaust section depressurizes the interior of the chamber. The magnetic field generating unit generates a magnetic field in front of the sputtering surface of the target material; The power source applies a voltage to the target material; The gas inlet section introduces sputtering gas into the chamber; as well as A shielding device is disposed between the target material and the workpiece being treated. The shielding device is the shielding device according to any one of claims 1 to 5.

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