Substrate processing apparatus and program

Abstract

Provided is a technique for easily updating a recipe used in a plasma processing apparatus. A control unit of a plasma processing apparatus includes a storage unit configured to store a first rule including a first change rule and a second change rule, and a processing unit including: a first recipe acquisition unit and a second recipe acquisition unit that acquire a first recipe and a second recipe; a transition recipe generation unit for generating a transition recipe from the first recipe and the second recipe; a first recipe changing unit and a second recipe changing unit that change the first recipe and the second recipe over time in accordance with an operation time of the radio frequency power supply; and a transition recipe changing unit that changes the transition recipe.

Description

Technical Field

[0001] Exemplary embodiments of this disclosure relate to plasma processing apparatus and procedures. Background Technology

[0002] Patent Document 1 discloses a method in which a processor in the control unit controls various parts of a plasma processing apparatus according to formula data, thereby executing various processes in the plasma processing apparatus.

[0003] Existing technical documents

[0004] Patent documents

[0005] Patent Document 1: Japanese Patent Application Publication No. 2021-39924 Summary of the Invention

[0006] This disclosure provides a technique for easily updating the formulations used in plasma processing apparatus.

[0007] In one exemplary embodiment of this disclosure, a plasma processing apparatus is provided, comprising: a chamber; a gas supply unit configured to supply processing gas into the chamber; a radio frequency power supply configured to generate radio frequency power to generate plasma from the processing gas supplied to the chamber; and a control unit configured to control the gas supply unit and the radio frequency power supply. The control unit includes a storage unit and a processing unit. The storage unit is configured to store a first rule, which includes a first modification rule and a second modification rule. The processing unit includes: a first recipe acquisition unit for acquiring a first recipe for performing a first plasma processing step, the first recipe including a first set power level of the radio frequency power and a first set flow rate of the processing gas; a second recipe acquisition unit for acquiring a second recipe for performing a second plasma processing step, the second recipe including a second set power level of the radio frequency power and a second set flow rate of the processing gas; and a transition recipe generation unit for generating a transition recipe for performing a transition step between the first plasma processing step and the second plasma processing step. The method includes: a plurality of transition flows that change from a first set flow rate to a second set flow rate according to a first change rule; and a plurality of transition power levels that change from a first set power level to a second set power level according to a second change rule; a first recipe change unit that changes a first recipe over time according to the operating time of the RF power supply, the first recipe change unit including changing the first set power level and the first set flow rate over time; a second recipe change unit that changes a second recipe over time according to the operating time of the RF power supply, the second recipe change unit including changing the second set power level and the second set flow rate over time; and a transition recipe change unit that changes a transition recipe according to the changed first recipe and the changed second recipe, the changed transition recipe including: a plurality of changed transition flows that change from the changed first set flow rate to the changed second set flow rate according to the first change rule; and a plurality of changed transition power levels that change from the changed first set power level to the changed second set power level according to the second change rule.

[0008] Invention Effects

[0009] According to an exemplary embodiment of this disclosure, a technique is available for easily updating the formulation used in a plasma processing apparatus. Attached Figure Description

[0010] Figure 1 This is a system structure diagram illustrating an example of a plasma processing system.

[0011] Figure 2 This is a diagram illustrating an example of a rule-making device.

[0012] Figure 3 This is a diagram showing an example of a plasma processing device.

[0013] Figure 4This is a diagram showing an example of a computer included in the control unit.

[0014] Figure 5 This is a diagram showing an example of setting a recipe.

[0015] Figure 6 This is a diagram illustrating an example of a set-up formula and a transition formula.

[0016] Figure 7 This is a graph illustrating an example of parameter value changes in a transitional formulation.

[0017] Figure 8 This is a graph illustrating other examples of parameter value variations in transitional formulations.

[0018] Figure 9 This is a graph illustrating other examples of parameter value variations in transitional formulations.

[0019] Figure 10 This diagram illustrates an example of changing the initial formula and changing the transitional formula.

[0020] Figure 11 This is a flowchart illustrating an example of a plasma processing method.

[0021] Figure 12 This is a diagram showing other examples of setting up a recipe.

[0022] Figure 13 The diagram shows other examples of setting and transition formulas.

[0023] Figure 14 The diagram shows other examples of changing the set formula and changing the transition formula.

[0024] Figure 15 This is a diagram illustrating the formula involved in the reference example.

[0025] Explanation of reference numerals in the attached figures

[0026] W…substrate, 1…plasma processing system, 2…manufacturing apparatus, 2…storage unit, 200…rules, 201…set formula, 21…processing unit, 210…manufacturing unit, 211…transmission unit, 22…user interface, 23…communication unit, 3…plasma processing apparatus, 310…plasma processing chamber, 310a…side wall, 310e…gas outlet, 310s…plasma processing space, 311…substrate support, 3111…main body, 313…nozzle, 320…gas supply unit, 330 …Power supply, 331…RF power supply, 332…DC power supply, 340…exhaust system, 4…network, 5…control unit, 5a…computer, 5a1…processing unit, 5a10…acquisition unit, 5a11…generation unit, 5a12…change unit, 5a13…recipe execution unit, 5a2…storage unit, 5a20…rules, 5a21…set recipe, 5a22…transition recipe, 5a23…change set recipe, 5a24…change transition recipe, 5a25…program, 5a3…communication unit, 5a4…user interface. Detailed Implementation

[0027] The following describes various embodiments of this disclosure.

[0028] In one exemplary embodiment, a plasma processing apparatus is provided, comprising: a chamber; a gas supply unit configured to supply processing gas into the chamber; a radio frequency power supply configured to generate radio frequency power to generate plasma from the processing gas supplied to the chamber; and a control unit configured to control the gas supply unit and the radio frequency power supply. The control unit includes a storage unit and a processing unit. The storage unit is configured to store a first rule, which includes a first modification rule and a second modification rule. The processing unit includes: a first recipe acquisition unit for acquiring a first recipe for performing a first plasma processing step, the first recipe including a first set power level of the radio frequency power and a first set flow rate of the processing gas; a second recipe acquisition unit for acquiring a second recipe for performing a second plasma processing step, the second recipe including a second set power level of the radio frequency power and a second set flow rate of the processing gas; and a transition recipe generation unit for generating a transition recipe for performing a transition step between the first plasma processing step and the second plasma processing step, the transition recipe including... The system includes: a plurality of transition flows that change from a first set flow rate to a second set flow rate according to a first change rule; and a plurality of transition power levels that change from a first set power level to a second set power level according to a second change rule; a first recipe change unit that changes a first recipe over time based on the operating time of the RF power supply, the first recipe change unit including changing the first set power level and the first set flow rate over time; a second recipe change unit that changes a second recipe over time based on the operating time of the RF power supply, the second recipe change unit including changing the second set power level and the second set flow rate over time; and a transition recipe change unit that changes a transition recipe based on the changed first recipe and the changed second recipe, the changed transition recipe including: a plurality of changed transition flows that change from the changed first set flow rate to the changed second set flow rate according to the first change rule; and a plurality of changed transition power levels that change from the changed first set power level to the changed second set power level according to the second change rule.

[0029] In one exemplary embodiment, the control unit further includes a rule acquisition unit configured to acquire a first rule from an external device via a network and store it in a storage unit.

[0030] In one exemplary embodiment, the first recipe acquisition unit is configured to acquire a first recipe from an external device via a network and store it in a storage unit, and the second recipe acquisition unit is configured to acquire a second recipe from an external device via a network and store it in a storage unit.

[0031] In one exemplary embodiment, the storage unit is configured to also store a second rule, the first formula change unit changes a first set power level and a first set flow rate over time based on the second rule, and the second formula change unit changes a second set power level and a second set flow rate over time based on the second rule.

[0032] In one exemplary embodiment, the control unit further includes a rule acquisition unit configured to acquire a first rule and a second rule from an external device via a network and store them in a storage unit.

[0033] In one exemplary embodiment, a program is provided for controlling a plasma processing apparatus, the plasma processing apparatus comprising: a chamber; a gas supply unit configured to supply processing gas into the chamber; a radio frequency power supply configured to generate radio frequency power to generate plasma from the processing gas supplied to the chamber; and a control unit configured to control the gas supply unit and the radio frequency power supply, comprising a storage unit and a processing unit, wherein the program causes the processing unit of the control unit to perform a process including the following steps: (a) storing a first rule including a first modification rule and a second modification rule in the storage unit; (b) obtaining a first recipe for performing a first plasma processing step, the first recipe including a first set power level of radio frequency power and a first set flow rate of processing gas; (c) obtaining a second recipe for performing a second plasma processing step, the second recipe including a second set power level of radio frequency power and a second set flow rate of processing gas; and (d) generating plasma for the first plasma processing step and the second plasma processing step. The steps of executing a transition formula for a transition process between processing steps, the transition formula including: (e) a plurality of transition flows that change from a first set flow rate to a second set flow rate according to a first change rule; and a plurality of transition power levels that change from a first set power level to a second set power level according to a second change rule; (f) a step of changing the first formula over time according to the operating time of the RF power supply, including changing the first set power level and the first set flow rate over time; (g) a step of changing the second formula over time according to the operating time of the RF power supply, including changing the second set power level and the second set flow rate over time; and (g) a step of changing the transition formula according to the changed first formula and the changed second formula, the changed transition formula including: a plurality of changed transition flows that change from a changed first set flow rate to a changed second set flow rate according to a first change rule; and a plurality of changed transition power levels that change from a changed first set power level to a changed second set power level according to a second change rule.

[0034] In one exemplary implementation, (a) includes obtaining a first rule from an external device via a network and storing it in a storage unit.

[0035] In one exemplary embodiment, (b) includes obtaining a first recipe from an external device via a network and storing it in a storage unit, and (c) includes obtaining a second recipe from an external device via a network and storing it in a storage unit.

[0036] In one exemplary embodiment, (a) includes storing a second rule in a storage unit, (e) includes changing a first set power level and a first set flow rate over time based on the second rule, and (f) includes changing a second set power level and a second set flow rate over time based on the second rule.

[0037] In one exemplary implementation, (a) includes obtaining a first rule and a second rule from an external device via a network and storing them in a storage unit.

[0038] In one exemplary embodiment, a plasma processing apparatus is provided, comprising: a chamber; a radio frequency power supply configured to generate radio frequency power to generate plasma within the chamber; and a control unit including a storage unit and a processing unit. The storage unit is configured to store a first rule, and the processing unit includes: a first recipe acquisition unit for acquiring a first recipe for performing a first plasma processing step, the first recipe including a first set level of set parameters; a second recipe acquisition unit for acquiring a second recipe for performing a second plasma processing step, the second recipe including a second set level of set parameters; and a transition recipe generation unit for generating a transition recipe for performing a transition step between the first plasma processing step and the second plasma processing step. The method includes: a transition formula comprising multiple transition setting levels that change from a first setting level to a second setting level according to a first rule; a first formula change unit that changes the first formula over time according to the operating time of the RF power supply, the first formula change unit comprising changing the first setting level over time; a second formula change unit that changes the second formula over time according to the operating time of the RF power supply, the second formula change unit comprising changing the second setting level over time; and a transition formula change unit that changes the transition formula according to the changed first formula and the changed second formula, the changed transition formula comprising multiple changed transition setting levels that change from the changed first setting level to the changed second setting level according to a first rule.

[0039] In one exemplary embodiment, the control unit further includes a rule acquisition unit configured to acquire a first rule from an external device via a network and store it in a storage unit.

[0040] In one exemplary embodiment, the first recipe acquisition unit acquires the first recipe from an external device via a network and stores it in the storage unit.

[0041] In one exemplary embodiment, the storage unit is configured to also store a second rule, the first formula change unit changes a first setting level over time based on the second rule, and the second formula change unit changes a second setting level over time based on the second rule.

[0042] In one exemplary embodiment, the control unit further includes a rule acquisition unit configured to acquire a first rule and a second rule from an external device via a network and store them in a storage unit.

[0043] In one exemplary embodiment, the parameters are set to at least one of the following: the power level of the radio frequency power, the flow rate of the processing gas supplied to the chamber, and the pressure inside the chamber.

[0044] The embodiments of this disclosure will now be described in detail with reference to the accompanying drawings. Furthermore, the same or identical elements will be labeled with the same symbols in the drawings, and repeated descriptions will be omitted. Unless otherwise specified, positional relationships such as up, down, left, and right will be described based on the positional relationships shown in the drawings. The dimensions in the drawings are not actual scales, and actual scales are not limited to the scales shown.

[0045] Plasma processing equipment consists of hardware and software. The software includes sections adjustable by the user and sections adjustable by the manufacturer but not by the user. Furthermore, in recent years, with the increasing complexity of processing procedures and shorter delivery times for equipment, fine-tuning is sometimes performed after hardware completion, necessitating software modifications after the hardware leaves the factory.

[0046] Examples of software that cannot be adjusted by the user include hardware-dependent components. This type of software includes rules for automatically inserting recipes between user-created recipes. These rules are created by the plasma processing device manufacturer and assembled within the device, but modifications are sometimes necessary during operation. For example, changes in the hardware structure of the plasma processing device, or changes in the state within the chamber due to component consumption, may necessitate modifications to the recipes or rules.

[0047] [Structure of Plasma Processing System 1]

[0048] Figure 1 This is a system structure diagram illustrating an example of a plasma processing apparatus system 1. The plasma processing system 1 includes a fabrication apparatus 2 and a plasma processing apparatus 3. The fabrication apparatus 2 and the plasma processing apparatus 3 communicate via a network 4, transmitting and receiving data from each other through the network 4. The fabrication apparatus 2 is an example of a regular fabrication apparatus.

[0049] The fabrication device 2 creates a set recipe according to the user's operation and sends the created set recipe to the plasma processing device 3 via network 4. Additionally, the fabrication device 2 creates rules according to the user's operation and sends the created rules to the plasma processing device 3 via network 4. The rules include a first rule and a second rule. The first rule is used to generate a transition recipe for the transition process between the first and second plasma processing steps. The second rule is used to change the set parameter values ​​for performing the first plasma processing step and the set parameter values ​​for performing the second plasma processing step according to the operating time of the radio frequency power supply.

[0050] The plasma processing apparatus 3 acquires the set formula and rules from the fabrication apparatus 2 via network 4. Furthermore, the plasma processing apparatus 3 generates a transition formula based on a first rule included in the acquired rules. Additionally, the plasma processing apparatus 3 modifies the set formula based on a second rule included in the acquired rules, generating a modified set formula. Furthermore, the plasma processing apparatus 3 modifies the transition formula based on both the first and second rules included in the acquired rules, generating a modified transition formula. Then, the plasma processing apparatus 3 performs film deposition or etching processes on the substrate W according to the set formula, transition formula, modified set formula, and modified transition formula.

[0051] [Structure of Manufacturing Device 2]

[0052] Figure 2 This diagram shows an example of the manufacturing apparatus 2. The manufacturing apparatus 2 includes a storage unit 20, a processing unit 21, a user interface 22, and a communication unit 23.

[0053] The storage unit 20 stores rules 200 and setting recipes 201. Rules 200 include a first rule and a second rule. In addition, setting recipes 201 include a first recipe and a second recipe. The first recipe includes setting parameter values ​​for performing a first plasma treatment process, and the second recipe includes setting parameter values ​​for performing a second plasma treatment process.

[0054] The processing unit 21 includes a creation unit 210 and a sending unit 211. The creation unit 210 creates a first rule and a second rule based on user operations via the user interface 22, and stores the created rule 200, including the first and second rules, in the storage unit 20. Additionally, the creation unit 210 creates a setting recipe 201 based on user operations via the user interface 22, and stores the created setting recipe 201 in the storage unit 20. The creation unit 210 is an example of a rule creation unit.

[0055] The communication unit 23 communicates with the plasma processing device 3 via the network 4. The transmission unit 211 transmits the rules 200 and the setting formula 201 stored in the storage unit 20 to the plasma processing device 3 via the communication unit 23 and the network 4.

[0056] [Structure of Plasma Processing Device 3]

[0057] Figure 3 This diagram illustrates an example of a plasma processing apparatus 3. The plasma processing apparatus 3 is an example of a substrate processing apparatus. Figure 3 In the example shown is a capacitively coupled plasma processing device 3.

[0058] The capacitively coupled plasma processing apparatus 3 includes a plasma processing chamber 310, a gas supply unit 320, a power supply 330, and an exhaust system 340. Additionally, the plasma processing apparatus 3 includes a substrate support 311 and a gas inlet. The gas inlet is configured to introduce at least one processing gas into the plasma processing chamber 310. The gas inlet includes a nozzle 313. The substrate support 311 is disposed within the plasma processing chamber 310. The nozzle 313 is disposed above the substrate support 311. In one embodiment, the nozzle 313 constitutes at least a portion of the ceiling of the plasma processing chamber 310. The plasma processing chamber 310 has a plasma processing space 310s defined by the nozzle 313, the sidewall 310a of the plasma processing chamber 310, and the substrate support 311. The plasma processing chamber 310 has at least one gas supply port for supplying at least one processing gas to the plasma processing space 310s and at least one gas outlet for discharging gas from the plasma processing space. The plasma processing chamber 310 is grounded. The nozzle 313 and the substrate support 311 are electrically insulated from the frame of the plasma processing chamber 310.

[0059] The substrate support portion 311 includes a main body portion 3111 and a ring assembly 3112. The main body portion 3111 has a central region 3111a for supporting the substrate W and an annular region 3111b for supporting the ring assembly 3112. A wafer is an example of a substrate W. The annular region 3111b of the main body portion 3111 surrounds the central region 3111a of the main body portion 3111 in a top view. The substrate W is disposed on the central region 3111a of the main body portion 3111, and the ring assembly 3112 is disposed on the annular region 3111b of the main body portion 3111 in such a way that it surrounds the substrate W on the central region 3111a of the main body portion 3111. Therefore, the central region 3111a is also referred to as a substrate support surface for supporting the substrate W, and the annular region 3111b is also referred to as an annular support surface for supporting the ring assembly 3112.

[0060] In one embodiment, the main body 3111 includes a base 31110 and an electrostatic chuck 31111. The base 31110 includes a conductive component. The conductive component of the base 31110 can function as a lower electrode. The electrostatic chuck 31111 is disposed on the base 31110. The electrostatic chuck 31111 includes a ceramic component 31111a and an electrostatic electrode 31111b disposed within the ceramic component 31111a. The ceramic component 31111a has a central region 3111a. In one embodiment, the ceramic component 31111a also includes an annular region 3111b. Alternatively, other components surrounding the electrostatic chuck 31111, such as an annular electrostatic chuck or an annular insulating component, may also have an annular region 3111b. In this case, a ring assembly 3112 can be disposed on the annular electrostatic chuck or the annular insulating component, and can be disposed on both the electrostatic chuck 31111 and the annular insulating component simultaneously. Additionally, at least one radio frequency (RF) / DC electrode coupled to the radio frequency (RF) power supply 31 and / or direct current (DC) power supply 32 (described later) may also be disposed within the ceramic component 31111a. In this case, the at least one RF / DC electrode functions as a lower electrode. When the bias RF signal and / or DC signal (described later) are supplied to the at least one RF / DC electrode, the RF / DC electrode is also referred to as a bias electrode. Furthermore, the conductive components of the base 31110 and the at least one RF / DC electrode may also function as multiple lower electrodes. Additionally, the electrostatic electrode 31111b may function as a lower electrode. Therefore, the substrate support portion 311 includes at least one lower electrode.

[0061] The ring assembly 3112 includes one or more annular components. In one embodiment, the one or more annular components include one or more edge rings and at least one cover ring. The edge rings are formed of a conductive or insulating material, and the cover rings are formed of an insulating material.

[0062] Additionally, the substrate support 311 may also include a temperature control module configured to adjust at least one of the electrostatic chuck 31111, the ring assembly 3112, and the substrate to a target temperature. The temperature control module may include a heater, a heat transfer fluid, a flow path 31110a, or a combination thereof. A heat transfer fluid, such as brine or gas, flows through the flow path 31110a. In one embodiment, the flow path 1110a is formed within the base 31110, and one or more heaters are disposed within the ceramic component 31111a of the electrostatic chuck 31111. Furthermore, the substrate support 311 may also include a heat transfer gas supply section configured to supply heat transfer gas to the gap between the back surface of the substrate W and the central region 3111a.

[0063] The nozzle 313 is configured to introduce at least one processing gas from the gas supply unit 320 into the plasma processing space 310s. The nozzle 313 has at least one gas supply port 313a, at least one gas diffusion chamber 313b, and a plurality of gas inlets 313c. The processing gas supplied to the gas supply port 313a is introduced into the plasma processing space 310s through the gas diffusion chamber 313b and the plurality of gas inlets 313c. Furthermore, the nozzle 313 includes at least one upper electrode. In addition to the nozzle 313, the gas inlet unit may also include one or more side gas injectors (SGIs) mounted on one or more openings formed on the sidewall 310a.

[0064] The gas supply unit 320 may include at least one gas source 321 and at least one flow controller 322. In one embodiment, the gas supply unit 320 is configured to supply at least one processing gas from corresponding gas sources 321 to nozzles 313 via corresponding flow controllers 322. Each flow controller 322 may include, for example, a mass flow controller or a pressure-controlled flow controller. Furthermore, the gas supply unit 320 may include one or more flow modulation devices for modulating or pulsedizing the flow rate of the at least one processing gas.

[0065] The power supply 330 includes a radio frequency (RF) power supply 331, which is coupled to the plasma processing chamber 310 via at least one impedance matching circuit. The RF power supply 331 is configured to provide at least one RF signal (RF power) to at least one lower electrode and / or at least one upper electrode. Plasma is thus formed by at least one processing gas supplied to the plasma processing space 310. Therefore, the RF power supply 331 can function as at least a part of a plasma generation unit configured to generate plasma from one or more processing gases within the plasma processing chamber 310. Furthermore, by supplying a bias RF signal to at least one lower electrode, a bias potential is generated on the substrate W, enabling the introduction of ionic components from the formed plasma into the substrate W.

[0066] In one embodiment, the radio frequency (RF) power supply 331 includes a first RF generation unit 331a and a second RF generation unit 331b. The first RF generation unit 331a is configured to be coupled to at least one lower electrode and / or at least one upper electrode via at least one impedance matching circuit to generate a source RF signal (source RF power) for plasma generation. In one embodiment, the source RF signal has a frequency in the range of 10 MHz to 150 MHz. In one embodiment, the first RF generation unit 331a may also be configured to generate multiple source RF signals with different frequencies. The generated one or more source RF signals are supplied to at least one lower electrode and / or at least one upper electrode.

[0067] The second radio frequency (RF) generation unit 331b is configured to couple to at least one lower electrode via at least one impedance matching circuit to generate a bias RF signal (bias RF power). The frequency of the bias RF signal may be the same as or different from the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency lower than that of the source RF signal. In one embodiment, the bias RF signal has a frequency in the range of 100 kHz to 60 MHz. In one embodiment, the second RF generation unit 331b may also be configured to generate multiple bias RF signals with different frequencies. The generated one or more bias RF signals are supplied to at least one lower electrode. Furthermore, in various embodiments, at least one of the source RF signal and the bias RF signal may be pulsed.

[0068] Furthermore, the power supply 330 may also include a DC power supply 332 coupled to the plasma processing chamber 310. The DC power supply 332 includes a first DC generating unit 332a and a second DC generating unit 332b. In one embodiment, the first DC generating unit 332a is configured to be connected to at least one lower electrode to generate a first DC signal. The generated first DC signal is applied to at least one lower electrode. In one embodiment, the second DC generating unit 332b is configured to be connected to at least one upper electrode to generate a second DC signal. The generated second DC signal is applied to at least one upper electrode.

[0069] In various embodiments, the first and second DC signals can be pulsed. In this case, a voltage pulse sequence is applied to at least one lower electrode and / or at least one upper electrode. The voltage pulses can have rectangular, trapezoidal, triangular, or combinations thereof pulse waveforms. In one embodiment, a waveform generation unit for generating a voltage pulse sequence from the DC signal is connected between the first DC generation unit 332a and at least one lower electrode. Therefore, the first DC generation unit 332a and the waveform generation unit constitute a voltage pulse generation unit. When the second DC generation unit 32b and the waveform generation unit constitute a voltage pulse generation unit, the voltage pulse generation unit is connected to at least one upper electrode. The voltage pulses can have positive or negative polarity. Furthermore, the voltage pulse sequence can include one or more positive voltage pulses and one or more negative voltage pulses in one cycle. Additionally, the first and second DC generation units 332a and 332b can be configured based on the RF power supply 331, and the first DC generation unit 332a can also be configured in place of the second RF generation unit 331b.

[0070] The exhaust system 340 may be connected, for example, to a gas outlet 310e located at the bottom of the plasma processing chamber 10. The exhaust system 340 may include a pressure regulating valve and a vacuum pump. The pressure within the plasma processing space 10s is regulated by the pressure regulating valve. The vacuum pump may include a turbomolecular pump, a dry pump, or a combination thereof.

[0071] The plasma processing apparatus 3 has a control unit 5. The control unit 5 processes computer-executable instructions that cause the plasma processing apparatus 3 to perform the various processes described herein. The control unit 5 may be configured to control various elements of the plasma processing apparatus 3 to perform the various processes described herein. In one embodiment, part or all of the control unit 5 may be included in the plasma processing apparatus 3. The control unit 5 may include a processing unit 5a1, a storage unit 5a2, a communication unit 5a3, and a user interface 5a4. The control unit 5 is implemented, for example, by a computer 5a. The processing unit 5a1 may be configured to perform various control operations by reading a program from the storage unit 5a2 according to an operation from a user via the user interface 5a4 and executing the read program 5a25. In this embodiment, the program is pre-stored in the storage unit 5a2, but as another example, it may also be retrieved via a medium when needed. The retrieved program is stored in the storage unit 5a2 and read and executed by the processing unit 5a1 from the storage unit 5a2. The medium may be various storage media readable by the computer 5a, or it may be a network 4 connected to the communication unit 5a3. The processing unit 5a1 may also be a CPU (Central Processing Unit). The storage unit 5a2 may include RAM (Random Access Memory), ROM (Read Only Memory), HDD (Hard Disk Drive), SSD (Solid State Drive), or a combination thereof. The communication unit 5a3 may also communicate with the plasma processing device 3 via a communication loop such as a LAN (Local Area Network). The user interface 5a4 may include input devices such as a keyboard and output devices such as a display.

[0072] [Structure of Computer 5a]

[0073] Figure 4 This diagram shows an example of a computer 5a included in the control unit 5. In this embodiment, the computer 5a includes a processing unit 5a1, a storage unit 5a2, a communication unit 5a3, and a user interface 5a4.

[0074] The storage unit 5a2 stores rule 5a20, set recipe 5a21, transition recipe 5a22, modified set recipe 5a23, modified transition recipe 5a24, and program 5a25. The processing unit 5a1 executes program 5a25 read from the storage unit 5a2 to realize the acquisition unit 5a10, generation unit 5a11, modification unit 5a12, and recipe execution unit 5a13.

[0075] The acquisition unit 5a10 acquires rules, including a first rule and a second rule, from the manufacturing apparatus 2 via the communication unit 5a3 and the network 4, and stores the acquired rules as rule 5a20 in the storage unit 5a2. Additionally, the acquisition unit 5a10 acquires a setting recipe from the manufacturing apparatus 2 via the communication unit 5a3 and the network 4, and stores the acquired setting recipe as setting recipe 5a21 in the storage unit 5a2. The acquisition unit 5a10 is an example of a first recipe acquisition unit, a second recipe acquisition unit, and a rule acquisition unit.

[0076] Figure 5 This is a diagram illustrating an example of setting formula 5a21. In Figure 5 In the example, it is shown that in process N, the flow rate of gas A is 200 sccm (3.3 × 10⁻⁶). -6 m 3 / s), the flow rate of gas B is 0. Additionally, in Figure 5 In the example shown, in step N+1 performed after step N, the flow rate of gas A is 100 sccm and the flow rate of gas B is 50 sccm. Gas A and gas B are examples of gas processing.

[0077] Step N is an example of the first plasma treatment step, and step N+1 is an example of the second plasma treatment step. Furthermore, in Figure 5 In this example, the flow rates of gas A and gas B corresponding to process N are an example of the first formulation, and the flow rates of gas A and gas B corresponding to process N+1 are an example of the second formulation. Furthermore, Figure 5 The flow rates of gas A and gas B shown are examples of set parameters. Other set parameters include the magnitude of the radio frequency power (power level) and the pressure within the plasma processing chamber 10.

[0078] return Figure 4 Continuing the explanation, generation unit 5a11 generates a transitional formula based on the first rule contained in rule 5a20 stored in storage unit 5a2, and stores the generated transitional formula as transitional formula 5a22 in storage unit 5a2. Generation unit 5a11 is an example of a transitional formula generation unit.

[0079] Figure 6 This diagram illustrates an example of the initial formulation 5a21 and the transition formulation 5a22. The transition formulation 5a22 is a process inserted between two processes, used to suppress state changes in the plasma processing device 3 during the switching between the two processes. Figure 6 In the example, three transitional processes T1, T2, and T3 are inserted between process N and process N+1.

[0080] In the three transition processes T1, T2, and T3, for example... Figure 7As shown, the flow rate of gas A is set in each transition step, so that the flow rate of gas A gradually decreases from 200 sccm to 100 sccm. In addition, in the three transition steps T1, T2 and T3, the flow rate of gas B is set in each transition step by gradually increasing from 0 to 50 sccm.

[0081] In addition, Figure 6 In the example, three transition steps T1, T2, and T3 are inserted between step N and step N+1, but the disclosed technology is not limited to this. As another example, the number of transition steps inserted between step N and step N+1 can be less than three or more than three. Additionally, for example... Figure 8 As shown, the execution time of each process between process N and process N+1 can also be set independently. Figure 8 In the example, among the three transition steps T1, T2, and T3, transition step T2 has the longest execution time, and transition step T3 has the shortest execution time. The number of transition steps and the execution time of each transition step are set by the user via the manufacturing device 2.

[0082] in addition, Figure 7 or Figure 8 The gas flow rates in the various transition steps shown are set to change gradually along a straight line, but the disclosed technology is not limited to this. Other examples include, for instance... Figure 9 As shown, the gas flow rate in multiple transition processes can be set to gradually change along an upwardly convex curve L1 or a downwardly convex curve L2.

[0083] Or, for example, Figure 9 As shown, the gas flow rate in multiple transition processes can also be set to gradually change along curve L3, which changes more gently as it gets closer to the previous process (process N) and the next process (process N+1).

[0084] Or, for example, Figure 9 As shown, the gas flow rate in multiple transition steps can be set to gradually vary along curve L4, which includes the period of increasing flow rate during the transition steps, rather than a monotonically decreasing flow rate. Alternatively, when increasing the gas flow rate, it can also be set to gradually vary along a curve that includes the period of decreasing flow rate during the transition steps, rather than a monotonically increasing flow rate.

[0085] return Figure 4Continuing the explanation, the modification unit 5a12 is configured to modify the setting parameter values ​​included in the setting recipe 5a21 based on the second rule contained in the rule 5a20 stored in the storage unit 5a2, according to the operating time of the RF power supply 331. For example, based on the second rule, the modification unit 5a12 modifies the flow rates of gas A and gas B included in process N and process N+1 according to the operating time of the RF power supply 331. Then, the modification unit 5a12 stores the recipe including the modified flow rates of gas A and gas B as the modified setting recipe 5a23 in the storage unit 5a2.

[0086] Furthermore, the modification unit 5a12 is configured to modify the transition formula 5a22 according to the first rule included in the rule 5a20 stored in the storage unit 5a2 and the modification setting formula 5a23. For example, the modification unit 5a12 modifies the transition formula 5a22 for gas A and gas B respectively according to the first rule, so that the flow rate gradually changes from the modified process N to process N+1. Then, the modification unit 5a12 stores the modified transition formula 5a22 as the modified transition formula 5a24 in the storage unit 5a2. The modification unit 5a12 is an example of a first formula modification unit, a second formula modification unit, and a transition formula modification unit.

[0087] Thus, for example, Figure 10 The modified setting formula 5a23 and the modified transition formula 5a24 are shown. Figure 10 The example illustrates the change setting formula 5a23 and the change transition formula 5a24 after the RF power supply 331 has been operated for a specified time.

[0088] exist Figure 10 In the example, the flow rate of gas A in formula 5a23 of process N is reduced from 200 sccm to 140 sccm, and the flow rate of gas A in formula 5a23 of process N+1 is reduced from 100 sccm to 90 sccm. Additionally, the flow rate of gas B in formula 5a23 of process N+1 is reduced from 50 sccm to 40 sccm.

[0089] In addition, Figure 10 In the example, the gas flow rate is changed in the modified formula 5a23 of multiple transitional processes T1 to T3 by gradually changing the gas flow rate from the modified formula 5a23 of process N to the modified formula 5a23 of process N+1.

[0090] Here, if the gas flow rate in the transition step between process N and process N+1 is fixed, then when the gas flow rate of process N and process N+1 is changed according to the operating time of the RF power supply 331, useless changes in gas flow rate occur. For example, in Figure 10 In the middle, if Figure 6If the transition formula 5a22 shown is set to remain unchanged instead of the modified transition formula 5a24, the flow rate of gas A will first increase from 140 sccm to 175 sccm, and then decrease. Furthermore, between transition step T3 and step N+1, the flow rate of gas A decreases drastically from 125 sccm to 90 sccm. As a result, the state of the plasma processing apparatus 3 becomes more volatile, and adverse conditions such as plasma misfires may sometimes occur.

[0091] In contrast, in this embodiment, for example, Figure 10 As shown, the gas flow rate is gradually varied from process N to process N+1, and the gas flow rate is changed in the modified setting formula 5a24 for the three transition processes T1, T2, and T3 respectively. Therefore, when performing processes N and N+1 with different processing conditions, the state changes of the plasma processing apparatus 3 can be suppressed, and processing switching can be performed smoothly.

[0092] return Figure 4 Continuing the explanation. The formula execution unit 5a13 controls each part of the plasma processing apparatus 3 according to the set formula 5a21 and the transition formula 5a22 stored in the storage unit 5a2, thereby performing plasma processing on the substrate W. Additionally, the formula execution unit 5a13 acquires a modified set formula 5a23 and a modified transition formula 5a24 from the storage unit 5a2 based on the operating time of the RF power supply 331. Then, the formula execution unit 5a13 controls each part of the plasma processing apparatus 3 according to the acquired modified set formula 5a23 and modified transition formula 5a24, thereby performing plasma processing on the substrate W.

[0093] [Plasma Treatment Methods]

[0094] Figure 11 This is a flowchart illustrating an example of a plasma processing method. Figure 11 The steps in the example are implemented by controlling each part of the plasma processing device 3 through the control unit 5 of the plasma processing device 3.

[0095] First, the set prescription and rules are acquired (step S10). In step S10, the acquisition unit 5a10 acquires rules including a first rule and a second rule from the manufacturing device 2 via the communication unit 5a3 and the network 4, and stores the acquired rules as rule 5a20 in the storage unit 5a2. Additionally, in step S10, the acquisition unit 5a10 acquires a set formula from the manufacturing device 2 via the communication unit 5a3 and the network 4, and stores the acquired set formula as set formula 5a21 in the storage unit 5a2. Step S10 is an example of a first prescription acquisition step, a second prescription acquisition step, and a rule acquisition step.

[0096] Next, a transition formula is generated (step S11). In step S11, the generation unit 5a11 generates a transition formula according to the first rule contained in the rule 5a20 stored in the storage unit 5a2, and stores the generated transition formula as transition formula 5a22 in the storage unit 5a2. Step S11 is an example of a transition formula generation step.

[0097] Next, the setting formula is changed (step S12). In step S12, the changing unit 5a12 changes the setting parameter values ​​contained in the setting formula 5a21 according to the second rule contained in the rule 5a20 stored in the storage unit 5a2, for each operating time of the RF power supply 331. Then, the changing unit 5a12 stores the setting formula 5a21 with the changed setting parameters as the changed setting formula 5a23 in the storage unit 5a2. Step S12 is an example of the first formula change step and the second formula change step.

[0098] Next, the transition formula is changed (step S13). In step S13, the change unit 5a12 changes the transition formula 5a22 according to the first rule contained in rule 5a20 stored in storage unit 5a2 and the change setting formula 5a23. Then, the change unit 5a12 stores the transition formula 5a22 with changed setting parameters as the change setting formula 5a23 in storage unit 5a2. Step S13 is an example of the transition formula change step.

[0099] Next, the substrate W is processed according to the formula (step S14). In step S14, the formula execution unit 5a13 controls each part of the plasma processing apparatus 3 according to the set formula 5a21 and the transition formula 5a22 stored in the storage unit 5a2, thereby performing plasma processing on the substrate W. In addition, the formula execution unit 5a13 obtains the modified set formula 5a23 and the modified transition formula 5a24 corresponding to the operation time of the RF power supply 331 from the storage unit 5a2. Then, the formula execution unit 5a13 controls each part of the plasma processing apparatus 3 according to the obtained modified set formula 5a23 and modified transition formula 5a24, thereby performing plasma processing on the substrate W.

[0100] Next, it is determined whether to end the processing of substrate W (step S15). If the processing of substrate W has not ended (step S15: No), the processing shown in step S14 is performed again. On the other hand, if the processing of substrate W has ended (step S15), the plasma processing method shown in this flowchart ends.

[0101] The embodiments have been described above. As described above, the plasma processing apparatus (plasma processing apparatus 3) in this embodiment includes a chamber (plasma processing chamber 310), a gas supply unit (gas supply unit 320), a radio frequency power supply (radio frequency power supply 331), and a control unit (control unit 5). The gas supply unit is configured to supply processing gas into the chamber. The radio frequency power supply is configured to generate radio frequency power to generate plasma from the processing gas supplied to the chamber. The control unit is configured to control the gas supply unit and the radio frequency power supply. In addition, the control unit includes a processing unit (processing unit 5a1) and a storage unit (storage unit 5a2). The storage unit is configured to store a first rule and a second rule. The first rule is used to generate a transition formula for performing a transition process between the first plasma processing step and the second plasma processing step. The second rule is used to change the set parameter values ​​for performing the first plasma processing step and the set parameter values ​​for performing the second plasma processing step according to the operating time of the radio frequency power supply. The processing unit includes a first recipe acquisition unit (acquisition unit 5a10), a second recipe acquisition unit (acquisition unit 5a10), a rule acquisition unit (acquisition unit 5a10), a transition recipe generation unit (generation unit 5a11), a first recipe modification unit (modification unit 5a12), a second recipe modification unit (modification unit 5a12), and a transition recipe modification unit (modification unit 5a12). The first recipe acquisition unit is configured to acquire a first recipe including set parameter values ​​for performing a first plasma processing step. The second recipe acquisition unit is configured to acquire a second recipe including set parameter values ​​for performing a second plasma processing step. The rule acquisition unit is configured to acquire a first rule from an external device and store it in a storage unit. The transition recipe generation unit is configured to generate a transition recipe based on the first rule. The first recipe modification unit is configured to modify the set parameter values ​​included in the first recipe based on a second rule and according to the operating time of the RF power supply. The second recipe modification unit is configured to modify the set parameter values ​​included in the second recipe based on the second rule and according to the operating time of the RF power supply. The transition recipe modification unit is configured to modify the transition recipe based on the first rule, the first recipe modified by the first recipe modification unit, and the second recipe modified by the second recipe modification unit. Therefore, the rules used in the plasma processing device can be easily modified from outside the plasma processing device.

[0102] In addition, in the above embodiments, the set parameters are at least one of the following: the magnitude of the radio frequency power, the flow rate of the processing gas, and the pressure inside the chamber.

[0103] Furthermore, the above embodiment describes a procedure (5a25) for controlling a plasma processing apparatus. The plasma processing apparatus (plasma processing apparatus 3) includes a chamber (plasma processing chamber 310), a gas supply unit (gas supply unit 320), a radio frequency power supply (radio frequency power supply 331), and a control unit (control unit 5). The gas supply unit is configured to supply processing gas into the chamber. The radio frequency power supply is configured to generate radio frequency power to generate plasma from the processing gas supplied to the chamber. The control unit is configured to control the gas supply unit and the radio frequency power supply. Additionally, the control unit includes a processing unit (processing unit 5a1) and a storage unit (storage unit 5a2). The storage unit is configured to store a first rule and a second rule. The first rule is used to generate a transition formula for performing a transition process between the first plasma processing step and the second plasma processing step. The second rule is used to change the set parameter values ​​for performing the first plasma processing step and the set parameter values ​​for performing the second plasma processing step according to the operating time of the radio frequency power supply. The program causes the processing unit to execute a first recipe acquisition step (step S10), a second recipe acquisition step (step S10), a rule acquisition step (step S10), a transition recipe generation step (step S11), a first recipe modification step (step S12), a second recipe modification step (step S12), and a transition recipe modification step (step S13). In the first recipe acquisition step, a first recipe including set parameter values ​​for performing a first plasma treatment process is acquired. In the second recipe acquisition step, a second recipe including set parameter values ​​for performing a second plasma treatment process is acquired. In the rule acquisition step, a first rule is acquired from an external device and stored in a storage unit. In the transition recipe generation step, a transition recipe is generated based on the first rule. In the first recipe modification step, based on the second rule, the set parameter values ​​included in the first recipe are modified according to the operating time of the RF power supply. In the second recipe modification step, based on the second rule, the set parameter values ​​included in the second recipe are modified according to the operating time of the RF power supply. In the transition recipe modification step, the transition recipe is modified based on the first rule, the first recipe modified by the first recipe modification step, and the second recipe modified by the second recipe modification step. Therefore, the rules used in the plasma processing device can be easily modified from outside the plasma processing device.

[0104] Furthermore, the plasma processing system 1 in the above embodiment includes a rule-making apparatus (making apparatus 2) and a plasma processing apparatus (plasma processing apparatus 3). The rule-making apparatus has a rule-making section (making section 210) and a sending section (sending section 211). The rule-making section makes a first rule, which is used to generate a transition formula for performing a transition process between a first plasma processing step and a second plasma processing step. The sending section sends the first rule to the plasma processing apparatus. The plasma processing apparatus includes a chamber (plasma processing chamber 310), a gas supply section (gas supply section 320), a radio frequency power supply (radio frequency power supply 331), and a control section (control section 5). The gas supply section is configured to supply processing gas into the chamber. The radio frequency power supply is configured to generate radio frequency power to generate plasma from the processing gas supplied to the chamber. The control section is configured to control the gas supply section and the radio frequency power supply. In addition, the control section includes a processing section (processing section 5a1) and a storage section (storage section 5a2). The storage section is configured to store the first rule and the second rule. The first rule is used to generate a transition formula for performing a transition process between a first plasma processing step and a second plasma processing step. The second rule is used to change the set parameter values ​​for performing the first plasma treatment step and the set parameter values ​​for performing the second plasma treatment step according to the operating time of the radio frequency power supply. The processing unit includes a first recipe acquisition unit (acquisition unit 5a10), a second recipe acquisition unit (acquisition unit 5a10), a rule acquisition unit (acquisition unit 5a10), a transition recipe generation unit (generation unit 5a11), a first recipe modification unit (modification unit 5a12), a second recipe modification unit (modification unit 5a12), and a transition recipe modification unit (modification unit 5a12). The first recipe acquisition unit is configured to acquire a first recipe including set parameter values ​​for performing the first plasma treatment step. The second recipe acquisition unit is configured to acquire a second recipe including set parameter values ​​for performing the second plasma treatment step. The rule acquisition unit is configured to acquire a first rule from a rule-making apparatus and store it in a storage unit. The transition recipe generation unit is configured to generate a transition recipe based on the first rule. The first recipe modification unit is configured to modify the set parameter values ​​included in the first recipe according to the operating time of the radio frequency power supply based on the second rule. The second recipe modification unit is configured to modify the set parameter values ​​included in the second recipe according to the operating time of the radio frequency power supply based on the second rule. The transition formula modification unit is configured to modify the transition formula based on a first rule, a first formula modified by a first formula modification unit, and a second formula modified by a second formula modification unit. This allows for easy modification of the rules used in the plasma processing apparatus from outside the plasma processing apparatus.

[0105] [Variation Example]

[0106] Furthermore, the technology disclosed in this application is not limited to the above-described embodiments, and various modifications can be made within the scope of its intent.

[0107] In the above embodiment, in step S12, the modification unit 5a12, based on the second rule, changes the setting parameter values ​​of the setting formula 5a21 according to each operating time of the RF power supply 331, and stores them as the modified setting formula 5a23. Thus, the setting level of the setting parameters (e.g., the setting power level of the RF power, the setting flow rate of the processed gas, etc.) changes over time according to the operating time of the RF power supply 331. However, the method of changing the setting level of the setting parameters over time is not limited to this.

[0108] For example, in step S12, the acquisition unit 5a10 can acquire the setting change recipe 5a23 from the manufacturing apparatus 2 via the communication unit 5a3 and the network 4 during each operation of the RF power supply. Then, the modification unit 512a can store the setting change recipe 5a23 acquired by the acquisition unit 5a10 in the storage unit 5a2. As a result, the setting level of the setting parameter can be changed over time according to the operation time of the RF power supply 331.

[0109] Furthermore, for example, in step S12, the acquisition unit 5a10 can acquire setting parameters from the user via the user interface 5a2 at each operating time of the RF power supply. Then, the modification unit 512a can update the setting formula 5a21 based on the acquired setting parameters and store it in the storage unit 5a2 as a modified setting formula 5a23. Thus, the setting level of the setting parameters can be changed over time according to the operating time of the RF power supply 331.

[0110] In the above embodiment, gas A and gas B are used as set parameters to describe the set formula 5a21 ( Figure 5 ), transitional formulation 5a22 ( Figure 6 ), change the setting formula 5a23 and change the transition formula 5a24 ( Figure 10 However, the settings and recipes are not limited to these.

[0111] The setting parameters may include various control parameters included in the formulation, such as the power level of the radio frequency power (source radio frequency signal) and the pressure within the plasma processing chamber 10. In one example, the setting parameters include the power level of the bias radio frequency power (bias radio frequency signal). In one example, the setting parameters include the voltage level of the DC voltage applied to the lower electrode (first bias DC signal). In one example, the setting parameters include the voltage level of the DC voltage applied to the ring assembly 3112. In one example, the setting parameters include the voltage level of the DC voltage applied to the upper electrode (second DC signal). In one example, the setting parameters include the partial pressure ratio of the processing gas in each region within the plasma processing chamber (e.g., the central region and the peripheral region surrounding the central region).

[0112] In one embodiment, the plasma processing apparatus 3 includes an electromagnet assembly configured to generate a magnetic field within a chamber 310. The electromagnet assembly may include, for example, a plurality of electromagnets or a wound tube (yoke) disposed above a nozzle 313. In one embodiment, the electromagnet assembly includes a plurality of annular electromagnets arranged concentrically above the plasma processing space 310s. By controlling the current value supplied to the electromagnet assembly, the radial distribution of the plasma density generated within the chamber 310 can be adjusted. Setting parameters may include the magnitude of the current value supplied to the electromagnet assembly.

[0113] Figure 12 These are diagrams illustrating other examples of formula settings. In Figure 12 In the example, it is shown that in process N, the flow rate of gas A is 200 sccm (3.3 × 10⁻⁶). -6 m 3 / s), and the power level of the radio frequency power (source radio frequency signal) is 1000W. The flow rate and radio frequency power level of gas A corresponding to process N are an example of the first formulation. In addition, in Figure 12 In the example shown, in step N+1 performed after step N, the flow rate of gas A is 100 sccm and the power level of the radio frequency (RF) is 1100 W. The gas A and RF power level corresponding to step N+1 are an example of the second formulation.

[0114] Figure 13 This diagram illustrates other examples of the set formulation and transition formulation. Transition formulation 5a22 is a process inserted between two processes, used to suppress state changes in the plasma processing device 3 during the switching between the two processes. Figure 13 In the example, three transitional processes T1, T2, and T3 are inserted between process N and process N+1. Furthermore, the number of transitional processes inserted between process N and process N+1 can be less than three or more. Additionally, the execution times of the transitional processes inserted between process N and process N+1 can be partially or completely the same, or partially or completely different.

[0115] The flow rate of gas A and the power level of radio frequency power in the transition process are set based on a first rule included in rule 5a20 stored in storage unit 5a2. In one embodiment, the first rule includes a first modification rule and a second modification rule.

[0116] The first change rule is used to set the flow rate of gas A in the transition processes. In one example, the first change rule is set such that the flow rate of gas A gradually changes from the flow rate of gas A corresponding to process N to the flow rate of gas A corresponding to process N+1. The first change rule can be set such that the flow rate of gas A gradually changes along a straight line in multiple transition processes (see [link]). Figure 7 and Figure 8 ), and can be set to change gradually along the curve (see Figure 9 ).

[0117] The second change rule is used to set the power level of the radio frequency (RF) power in the transition process. In one example, the second change rule is set such that the RF power level gradually changes from the RF power level corresponding to process N to the RF power level corresponding to process N+1. The second change rule can be set such that the RF power level gradually changes along a straight line in multiple transition processes, or it can be set such that it gradually changes along a curve.

[0118] Transitional recipe 5a22 can be generated by generation unit 5a11 based on the first modification rule and the second modification rule of the first rule contained in rule 5a20 stored in storage unit 5a2. Figure 13 In the example shown, in the three transition steps T1, T2, and T3, the flow rate of gas A is set in each transition step such that the flow rate of gas A gradually decreases from 200 sccm to 100 sccm according to a first change rule. In each of the three transition steps T1, T2, and T3, the power level of the radio frequency power is set such that the power level of the radio frequency power gradually increases from 1000W to 1100W according to a second change rule.

[0119] Figure 14 These are diagrams illustrating other examples of changing the initial formula and changing the transition formula. Figure 14 In the example, in step N, the flow rate of gas A in formula 5a23 is reduced from 200 sccm to 140 sccm. In step N+1, the flow rate of gas A in formula 5a23 remains the same as in formula 5a21, at 100 sccm. Additionally, in step N+1, the RF power level in formula 5a23 is increased from 1000W to 1200W. In step N+1, the RF power level in formula 5a23 remains the same as in formula 5a21, at 1100W.

[0120] The modified transition formula 5a24 can be generated by the modification unit 5a12 based on the first modification rule and the second modification rule contained in the rule 5a20 stored in the storage unit 5a2. Figure 14 In the example shown, in the three transition processes T1, T2, and T3, the flow rate of gas A is set in each transition process such that the flow rate of gas A gradually decreases from 140 sccm to 100 sccm according to a first change rule. Furthermore, in the three transition processes T1, T2, and T3, the power level of the radio frequency (RF) power is set in each transition process such that the RF power level gradually decreases from 1200W to 1100W according to a second change rule.

[0121] However, if the gas flow rate and RF power level in the transition process between process N and process N+1 are set fixed, adverse situations may sometimes occur when the gas flow rate in process N and process N+1 is changed according to the operating time of RF power supply 331.

[0122] Figure 15 This is a diagram illustrating the formula involved in the reference example. Figure 15 It was set in the modified formula 5a23 (refer to...) Figure 14 In the case of maintaining the original state, the transition formula 5a22 (refer to) was set in a fixed manner. Figure 13 Examples of the situation. In Figure 15 In the example shown, the flow rate of gas A increases from 140 sccm in step N to 175 sccm in transition step T1, and then decreases to 100 sccm in step N+1 in transition steps T2 and T3. Additionally, in transition step T1, the RF power level decreases from 1200 W in step N to 1025 W, and then increases to 1100 W in step N+1 in transition steps T2 and T3. As a result, the state of the plasma processing apparatus 3 becomes more variable, sometimes leading to adverse conditions such as plasma misfires.

[0123] In contrast, Figure 14 In the example shown, the gas flow rate and radio frequency power level are gradually changed from step N to step N+1, and the gas flow rate and radio frequency power level are changed in the change setting formula 5a23 for the three transition steps T1, T2 and T3 respectively. Therefore, when performing two steps N and N+1 with different processing conditions, the state changes of the plasma processing device 3 can be suppressed, and the processing switching can be performed smoothly.

[0124] Furthermore, in the plasma processing system 1 of the above embodiment, rules and setting recipes are sent from the fabrication apparatus 2 to the plasma processing apparatus 3 via electrical signals through network 4, but the disclosed technology is not limited to this. As another example, the rules and setting recipes fabricated by the fabrication apparatus 2 can also be stored in a portable storage medium such as a USB (Universal Serial Bus) memory or a DVD (Digital Versatile Disc). This portable storage medium can then be installed in the control unit 5 of the plasma processing apparatus 3, and the control unit 5 retrieves the rules and setting recipes from this portable storage medium.

[0125] Furthermore, in the above embodiment, the modification unit 5a12 generates a modification setting formula 5a23 and a modification transition formula 5a24 for each operating time of the RF power supply 331 before processing the substrate W begins; however, the disclosed technology is not limited to this. As another example, the modification unit 5a12 may also generate the modification setting formula 5a23 and the modification transition formula 5a24 whenever the operating time of the RF power supply 331 reaches a predetermined time after processing the substrate W begins.

[0126] Furthermore, in the above embodiment, as an example of a plasma source, a plasma processing apparatus 3 using capacitively coupled plasma (CCP) was described, but the plasma source is not limited to this. Examples of plasma sources other than capacitively coupled plasma include inductively coupled plasma (ICP), microwave-excited surface wave plasma (SWP), electron cyclotron resonance plasma (ECP), and helical wave-excited plasma (HWP).

[0127] Furthermore, in the above embodiment, the setting level of the setting parameter is changed over time according to the operating time of the radio frequency power supply 331, but it is not limited to this. For example, the setting level of the setting parameter may also change over time according to the state of the consumable components (edge ​​ring, upper electrode, etc.) used in the plasma processing apparatus 3. The state of the consumable components can be determined not only based on the operating time of the radio frequency power supply 331, but also based on the operating time of the plasma processing apparatus 3 or the measurement results of the consumable components.

[0128] Furthermore, while the plasma processing apparatus 3 was described as an example in the above embodiments, it is not limited to this. For example, it can also be applied to a substrate processing apparatus that does not use plasma. In this case, the substrate processing system includes a substrate processing apparatus and a control unit, the control unit including a storage unit and a processing unit. The processing unit includes a first recipe acquisition unit, a second recipe acquisition unit, a transition recipe generation unit, a first recipe modification unit, a second recipe modification unit, and a transition recipe modification unit. The first recipe acquisition unit acquires a first recipe for performing a first substrate processing step. The first recipe includes a first setting level of setting parameters. In one embodiment, the first recipe includes multiple first setting levels corresponding to multiple setting parameters. The second recipe acquisition unit acquires a second recipe for performing a second substrate processing step. The second recipe includes a second setting level of setting parameters. In one embodiment, the second recipe includes multiple second setting levels corresponding to multiple setting parameters. The transition recipe generation unit generates a transition recipe for performing a transition step between the first substrate processing step and the second substrate processing step. For each setting parameter, the transition recipe includes multiple transition setting levels that change from the first setting level to the second setting level according to a first rule. The first recipe modification unit changes the first recipe over time, for example, according to the operating time of the substrate processing apparatus. In one embodiment, the first formula modification unit includes changing a first setting level for each setting parameter over time. The second formula modification unit changes a second formula over time, for example, based on the operating time of the substrate processing apparatus. In one embodiment, the second formula modification unit includes changing a second setting level for each setting parameter over time. The transition formula modification unit changes a transition formula based on the modified first formula and the modified second formula. The modified transition formula includes multiple modified transition setting levels for each setting parameter that change from the modified first setting level to the modified second setting level according to a first rule.

[0129] According to the above embodiments, a technique for easily updating the formulation used in plasma processing apparatus can be provided.

[0130] The embodiments of this disclosure also include the following aspects.

[0131] (Note 1)

[0132] A plasma processing device comprising:

[0133] Chamber;

[0134] The gas supply unit is configured to supply processing gas into the chamber.

[0135] A radio frequency power supply configured to generate radio frequency power to generate plasma from the processing gas supplied to the chamber; and

[0136] The control unit is configured to control the gas supply unit and the radio frequency power supply.

[0137] The control unit includes a storage unit and a processing unit.

[0138] The storage unit is configured to store a first rule, which includes a first modification rule and a second modification rule.

[0139] The processing unit includes:

[0140] A first recipe acquisition unit acquires a first recipe for performing a first plasma treatment process, the first recipe including a first set power level of the radio frequency power and a first set flow rate of the treatment gas;

[0141] The second recipe acquisition unit acquires a second recipe for performing a second plasma treatment process, the second recipe including a second set power level of the radio frequency power and a second set flow rate of the treatment gas;

[0142] The transition recipe generation unit generates a transition recipe for performing a transition process between the first plasma treatment process and the second plasma treatment process. The transition recipe includes a plurality of transition flow rates that change from the first set flow rate to the second set flow rate according to the first change rule and a plurality of transition power levels that change from the first set power level to the second set power level according to the second change rule.

[0143] A first formula modification unit changes the first formula over time according to the operating time of the radio frequency power supply. The first formula modification unit includes changing the first set power level and the first set flow rate over time.

[0144] A second formula modification unit changes the second formula over time based on the operating time of the RF power supply. The second formula modification unit includes changing the second set power level and the second set flow rate over time.

[0145] The transition formula modification unit modifies the transition formula according to the modified first formula and the modified second formula. The modified transition formula includes multiple modified transition flow rates that change from the modified first set flow rate to the modified second set flow rate according to the first modification rule, and multiple modified transition power levels that change from the modified first set power level to the modified second set power level according to the second modification rule.

[0146] (Note 2)

[0147] According to the plasma processing apparatus described in Appendix 1, wherein,

[0148] The control unit also includes a rule acquisition unit, which is configured to acquire the first rule from an external device via a network and store it in the storage unit.

[0149] (Note 3)

[0150] According to the plasma processing apparatus described in Appendix 2, wherein,

[0151] The first formula acquisition unit is configured to acquire the first formula from the external device via the network and store it in the storage unit.

[0152] The second formula acquisition unit is configured to acquire the second formula from the external device via the network and store it in the storage unit.

[0153] (Note 4)

[0154] The plasma processing apparatus according to any one of Annexes 1 to 3, wherein,

[0155] The storage unit is configured to store the second rule.

[0156] The first formula modification unit changes the first set power level and the first set flow rate over time based on the second rule.

[0157] The second formula modification unit changes the second set power level and the second set flow rate over time based on the second rule.

[0158] (Note 5)

[0159] According to the plasma processing apparatus described in Appendix 4, wherein...

[0160] The control unit also includes a rule acquisition unit, which is configured to acquire the first rule and the second rule from an external device via a network and store them in the storage unit.

[0161] (Note 6)

[0162] A program for controlling a plasma processing apparatus, the plasma processing apparatus comprising:

[0163] Chamber;

[0164] The gas supply unit is configured to supply processing gas into the chamber.

[0165] A radio frequency power supply configured to generate radio frequency power to generate plasma from the processing gas supplied to the chamber; and

[0166] The control unit, configured to control the gas supply unit and the radio frequency power supply, includes a storage unit and a processing unit.

[0167] The program causes the processing unit of the control unit to perform a process including the following steps:

[0168] (a) The step of storing a first rule, including a first change rule and a second change rule, in the storage unit;

[0169] (b) The step of obtaining a first recipe for performing a first plasma processing step, the first recipe comprising a first set power level of the radio frequency power and a first set flow rate of the processing gas;

[0170] (c) The step of obtaining a second recipe for performing a second plasma treatment process, the second recipe comprising a second set power level of the radio frequency power and a second set flow rate of the treatment gas;

[0171] (d) The step of generating a transition recipe for performing a transition process between the first plasma processing step and the second plasma processing step, the transition recipe comprising a plurality of transition flow rates varying from the first set flow rate to the second set flow rate according to the first change rule and a plurality of transition power levels varying from the first set power level to the second set power level according to the second change rule;

[0172] (e) The step of changing the first formula over time according to the operating time of the radio frequency power supply includes changing the first set power level and the first set flow rate over time;

[0173] (f) The step of changing the second formula over time according to the operating time of the RF power supply, including changing the second set power level and the second set flow rate over time; and

[0174] (g) The step of changing the transition formula according to the modified first formula and the modified second formula, wherein the modified transition formula includes a plurality of modified transition flow rates that change from the modified first set flow rate to the modified second set flow rate according to the first change rule and a plurality of modified transition power levels that change from the modified first set power level to the modified second set power level according to the second change rule.

[0175] (Note 7)

[0176] According to the procedure described in Appendix 6, wherein,

[0177] The first rule (a) is obtained from an external device via a network and stored in the storage unit.

[0178] (Postscript 8)

[0179] According to the procedure described in Appendix 7, wherein,

[0180] (b) includes obtaining the first recipe from the external device via the network and storing it in the storage unit.

[0181] The (c) includes obtaining the second recipe from the external device via the network and storing it in the storage unit.

[0182] (Note 9)

[0183] According to the procedure described in any one of Annexes 6 to 8, wherein,

[0184] The second rule is stored in the storage unit.

[0185] The (e) includes changing the first set power level and the first set flow rate over time based on the second rule.

[0186] The (f) includes changing the second set power level and the second set flow rate over time based on the second rule.

[0187] (Postscript 10)

[0188] According to the procedure described in Appendix 9, wherein,

[0189] The (a) includes obtaining the first rule and the second rule from an external device via a network and storing them in the storage unit.

[0190] (Postscript 11)

[0191] A plasma processing device comprising:

[0192] Chamber;

[0193] A radio frequency power supply configured to generate radio frequency power to generate plasma within the cavity; and

[0194] Control Department

[0195] The control unit includes a storage unit and a processing unit.

[0196] The storage unit is configured to store the first rule.

[0197] The processing unit includes:

[0198] The first formula acquisition unit acquires a first formula for performing a first plasma treatment process, the first formula including a first setting level of setting parameters;

[0199] The second recipe acquisition unit acquires a second recipe for performing a second plasma treatment process, the second recipe including a second setting level of the set parameters;

[0200] The transition recipe generation unit generates a transition recipe for performing a transition process between the first plasma processing step and the second plasma processing step. The transition recipe includes a plurality of transition setting levels that vary from the first setting level to the second setting level according to the first rule.

[0201] A first formula modification unit changes the first formula over time according to the operating time of the radio frequency power supply. The first formula modification unit includes changing the first set level over time.

[0202] The second formula modification unit changes the second formula over time according to the operating time of the RF power supply. The second formula modification unit includes changing the second set level over time.

[0203] The transition formula modification unit modifies the transition formula based on the modified first formula and the modified second formula. The modified transition formula includes multiple modified transition setting levels that change from the modified first setting level to the modified second setting level according to the first rule.

[0204] (Postscript 12)

[0205] According to the plasma processing apparatus described in Appendix 11, wherein,

[0206] The control unit also includes a rule acquisition unit, which is configured to acquire the first rule from an external device via a network and store it in the storage unit.

[0207] (Postscript 13)

[0208] According to the plasma processing apparatus described in Appendix 12, wherein,

[0209] The first recipe acquisition unit acquires the first recipe from the external device via the network and stores it in the storage unit.

[0210] (Postscript 14)

[0211] The plasma processing apparatus according to any one of Appendices 11 to 13, wherein,

[0212] The storage unit is configured to store the second rule.

[0213] The first formula modification unit changes the first set level over time based on the second rule.

[0214] The second formula modification unit changes the second setting level over time based on the second rule.

[0215] (Postscript 15)

[0216] According to the plasma processing apparatus described in Appendix 14, wherein,

[0217] The control unit also includes a rule acquisition unit, which is configured to acquire the first rule and the second rule from an external device via a network and store them in the storage unit.

[0218] (Postscript 16)

[0219] The plasma processing apparatus according to any one of Appendices 11 to 15, wherein,

[0220] The set parameters are at least one of the following: the power level of the radio frequency power, the flow rate of the processing gas supplied to the chamber, and the pressure inside the chamber.

[0221] (Postscript 17)

[0222] A storage medium storing a program as described in any one of Appendix 6 to Appendix 10.

[0223] (Postscript 18)

[0224] A method performed by a plasma processing apparatus, the plasma processing apparatus comprising:

[0225] Chamber;

[0226] The gas supply unit is configured to supply processing gas into the chamber.

[0227] A radio frequency power supply configured to generate radio frequency power to generate plasma from the processing gas supplied to the chamber; and

[0228] The control unit, configured to control the gas supply unit and the radio frequency power supply, includes a storage unit and a processing unit.

[0229] The method includes:

[0230] (a) The process of storing a first rule, including a first change rule and a second change rule, in the storage unit;

[0231] (b) A process of obtaining a first recipe for performing a first plasma processing step, the first recipe comprising a first set power level of the radio frequency power and a first set flow rate of the processing gas;

[0232] (c) A process of obtaining a second recipe for performing a second plasma treatment process, the second recipe comprising a second set power level of the radio frequency power and a second set flow rate of the treatment gas;

[0233] (d) A process of generating a transition recipe for performing a transition process between the first plasma processing step and the second plasma processing step, the transition recipe comprising a plurality of transition flow rates varying from the first set flow rate to the second set flow rate according to the first change rule and a plurality of transition power levels varying from the first set power level to the second set power level according to the second change rule;

[0234] (e) The process of changing the first formula over time according to the operating time of the radio frequency power supply includes changing the first set power level and the first set flow rate over time;

[0235] (f) The process of changing the second formula over time according to the operating time of the RF power supply, including changing the second set power level and the second set flow rate over time; and

[0236] (g) The step of changing the transition formula according to the modified first formula and the modified second formula, wherein the modified transition formula includes a plurality of modified transition flow rates that change from the modified first set flow rate to the modified second set flow rate according to the first modification rule and a plurality of modified transition power levels that change from the modified first set power level to the modified second set power level according to the second modification rule.

[0237] (Postscript 19)

[0238] A plasma processing system, comprising:

[0239] The plasma processing apparatus described in any one of Annexes 1 to 5 and Annexes 11 to 16; and

[0240] The rule-making apparatus includes a rule-making unit for making the first rule and a sending unit for sending the first rule to the plasma processing apparatus.

[0241] (Postscript 20)

[0242] A plasma processing device comprising:

[0243] Chamber;

[0244] The gas supply unit is configured to supply processing gas into the chamber.

[0245] A radio frequency power supply configured to generate radio frequency power to generate plasma from the processing gas supplied to the chamber; and

[0246] The control unit is configured to control the gas supply unit and the radio frequency power supply.

[0247] The control unit includes a processing unit and a storage unit.

[0248] The storage unit is configured to store a first rule and a second rule. The first rule is used to generate a transition formula for a transitional step between the first plasma processing step and the second plasma processing step. The second rule is used to change the set parameter values ​​for performing the first plasma processing step and the set parameter values ​​for performing the second plasma processing step according to the operating time of the RF power supply.

[0249] The processing unit includes:

[0250] The first formula acquisition unit is configured to acquire a first formula including set parameter values ​​for performing the first plasma treatment process;

[0251] The second formula acquisition unit is configured to acquire a second formula including set parameter values ​​for performing the second plasma treatment process;

[0252] The rule acquisition unit acquires the first rule from an external device and stores it in the storage unit;

[0253] The transition formula generation unit is configured to generate the transition formula based on the first rule;

[0254] The first formula modification unit is configured to modify the set parameter values ​​contained in the first formula based on the second rule and according to the operating time of the radio frequency power supply.

[0255] The second formula modification unit is configured to modify the set parameter values ​​contained in the second formula based on the second rule and according to the operating time of the RF power supply; and

[0256] The transitional formula modification unit is configured to modify the transitional formula based on the first rule, the first formula modified by the first formula modification unit, and the second formula modified by the second formula modification unit.

[0257] (Postscript 21)

[0258] According to the plasma processing apparatus described in Appendix 20, wherein,

[0259] The set parameters are at least one of the following: the magnitude of the radio frequency power, the flow rate of the processing gas, and the pressure within the chamber.

[0260] (Postscript 22)

[0261] A program for controlling a plasma processing device,

[0262] The plasma processing device includes:

[0263] Chamber;

[0264] The gas supply unit is configured to supply processing gas into the chamber.

[0265] A radio frequency power supply configured to generate radio frequency power to generate plasma from the processing gas supplied to the chamber; and

[0266] The control unit is configured to control the gas supply unit and the radio frequency power supply.

[0267] The control unit includes a processing unit and a storage unit.

[0268] The storage unit is configured to store a first rule and a second rule. The first rule is used to generate a transition formula for a transitional step between the first plasma processing step and the second plasma processing step. The second rule is used to change the set parameter values ​​for performing the first plasma processing step and the set parameter values ​​for performing the second plasma processing step according to the operating time of the RF power supply.

[0269] The program causes the processing unit to perform the following steps:

[0270] The first formula acquisition step involves acquiring a first formula that includes set parameter values ​​for performing the first plasma treatment process;

[0271] The second formula acquisition step involves acquiring a second formula that includes set parameter values ​​for performing the second plasma treatment process;

[0272] The rule acquisition step involves acquiring the first rule from an external device and storing it in the storage unit;

[0273] The transition formula generation step generates the transition formula based on the first rule;

[0274] The first formula modification step involves modifying the set parameter values ​​contained in the first formula based on the second rule and according to the operating time of the RF power supply.

[0275] The second formula modification step involves, based on the second rule, modifying the set parameter values ​​included in the second formula according to the operating time of the RF power supply; and

[0276] The transitional formula change step involves changing the transitional formula based on the first rule, the first formula changed through the first formula change step, and the second formula changed through the second formula change step.

[0277] (Postscript 23)

[0278] A plasma processing system, comprising:

[0279] Rule-making device; and

[0280] Plasma processing device,

[0281] The rule-making device includes:

[0282] The rule-making department creates a first rule for generating a transition formula for performing the transition process between the first plasma treatment process and the second plasma treatment process; and

[0283] The transmitting unit sends the first rule to the plasma processing device.

[0284] The plasma processing device includes:

[0285] Chamber;

[0286] The gas supply unit is configured to supply processing gas into the chamber.

[0287] A radio frequency power supply configured to generate radio frequency power to generate plasma from the processing gas supplied to the chamber; and

[0288] The control unit is configured to control the gas supply unit and the radio frequency power supply.

[0289] The control unit includes a processing unit and a storage unit.

[0290] The storage unit is configured to store the first rule and the second rule, wherein the second rule is used to change the set parameter values ​​for performing the first plasma processing step and the set parameter values ​​for performing the second plasma processing step according to the operating time of the radio frequency power supply.

[0291] The processing unit includes:

[0292] The first formula acquisition unit is configured to acquire a first formula including set parameter values ​​for performing the first plasma treatment process;

[0293] The second formula acquisition unit is configured to acquire a second formula including set parameter values ​​for performing the second plasma treatment process;

[0294] The rule acquisition unit acquires the first rule from the rule creation device and stores it in the storage unit;

[0295] The transition formula generation unit is configured to generate the transition formula based on the first rule;

[0296] The first formula modification unit is configured to modify the set parameter values ​​contained in the first formula based on the second rule and according to the operating time of the radio frequency power supply.

[0297] The second formula modification unit is configured to modify the set parameter values ​​contained in the second formula based on the second rule and according to the operating time of the RF power supply; and

[0298] The transitional formula modification unit is configured to modify the transitional formula based on the first rule, the first formula modified by the first formula modification unit, and the second formula modified by the second formula modification unit.

[0299] The above embodiments have been described for illustrative purposes and are not intended to limit the scope of this disclosure. Various modifications can be made to each embodiment without departing from the scope and spirit of this disclosure. For example, some components of one embodiment may be added to other embodiments. Additionally, some components of one embodiment may be replaced with corresponding components of other embodiments.

Claims

1. A plasma processing apparatus, comprising: Chamber; The gas supply unit is configured to supply processing gas into the chamber. A radio frequency power supply configured to generate radio frequency power to generate plasma from the processing gas supplied to the chamber; and The control unit is configured to control the gas supply unit and the radio frequency power supply. The control unit includes a storage unit and a processing unit. The storage unit is configured to store a first rule, which includes a first modification rule and a second modification rule. The processing unit includes: A first recipe acquisition unit acquires a first recipe for performing a first plasma treatment process, the first recipe including a first set power level of the radio frequency power and a first set flow rate of the treatment gas; The second recipe acquisition unit acquires a second recipe for performing a second plasma treatment process, the second recipe including a second set power level of the radio frequency power and a second set flow rate of the treatment gas; The transition recipe generation unit generates a transition recipe for performing a transition process between the first plasma treatment process and the second plasma treatment process. The transition recipe includes a plurality of transition flow rates that change from the first set flow rate to the second set flow rate according to the first change rule and a plurality of transition power levels that change from the first set power level to the second set power level according to the second change rule. A first formula modification unit changes the first formula over time according to the operating time of the radio frequency power supply. The first formula modification unit includes changing the first set power level and the first set flow rate over time. The second formula modification unit changes the second formula over time according to the operating time of the RF power supply. The second formula modification unit includes changing the second set power level and the second set flow rate over time. and The transition formula modification unit modifies the transition formula according to the modified first formula and the modified second formula. The modified transition formula includes multiple modified transition flow rates that change from the modified first set flow rate to the modified second set flow rate according to the first modification rule, and multiple modified transition power levels that change from the modified first set power level to the modified second set power level according to the second modification rule.

2. The plasma processing apparatus according to claim 1, wherein, The control unit also includes a rule acquisition unit, which is configured to acquire the first rule from an external device via a network and store it in the storage unit.

3. The plasma processing apparatus according to claim 2, wherein, The first recipe acquisition unit is configured to acquire the first recipe from the external device via the network and store it in the storage unit. The second recipe acquisition unit is configured to acquire the second recipe from the external device via the network and store it in the storage unit.

4. The plasma processing apparatus according to claim 1, wherein, The storage unit is configured to store the second rule. The first formula modification unit changes the first set power level and the first set flow rate over time based on the second rule. The second formula modification unit changes the second set power level and the second set flow rate over time based on the second rule.

5. The plasma processing apparatus according to claim 4, wherein, The control unit also includes a rule acquisition unit, which is configured to acquire the first rule and the second rule from an external device via a network and store them in the storage unit.

6. A program for controlling a plasma processing apparatus, the plasma processing apparatus comprising: Chamber; The gas supply unit is configured to supply processing gas into the chamber. A radio frequency power supply configured to generate radio frequency power to generate plasma from the processing gas supplied to the chamber; and The control unit, configured to control the gas supply unit and the radio frequency power supply, includes a storage unit and a processing unit. The program causes the processing unit of the control unit to perform a process including the following steps: (a) The step of storing a first rule, including a first change rule and a second change rule, in the storage unit; (b) The step of obtaining a first recipe for performing a first plasma processing step, the first recipe comprising a first set power level of the radio frequency power and a first set flow rate of the processing gas; (c) The step of obtaining a second recipe for performing a second plasma treatment process, the second recipe comprising a second set power level of the radio frequency power and a second set flow rate of the treatment gas; (d) The step of generating a transition recipe for performing a transition process between the first plasma processing step and the second plasma processing step, the transition recipe comprising a plurality of transition flow rates varying from the first set flow rate to the second set flow rate according to the first change rule and a plurality of transition power levels varying from the first set power level to the second set power level according to the second change rule; (e) The step of changing the first formula over time according to the operating time of the radio frequency power supply includes changing the first set power level and the first set flow rate over time; (f) The step of changing the second formula over time according to the operating time of the radio frequency power supply includes changing the second set power level and the second set flow rate over time; and (g) The step of changing the transition formula according to the modified first formula and the modified second formula, wherein the modified transition formula includes a plurality of modified transition flow rates that change from the modified first set flow rate to the modified second set flow rate according to the first change rule and a plurality of modified transition power levels that change from the modified first set power level to the modified second set power level according to the second change rule.

7. The procedure according to claim 6, wherein, The first rule (a) is obtained from an external device via a network and stored in the storage unit.

8. The procedure according to claim 7, wherein, (b) includes obtaining the first recipe from the external device via the network and storing it in the storage unit. The (c) includes obtaining the second recipe from the external device via the network and storing it in the storage unit.

9. The procedure according to claim 6, wherein, The second rule is stored in the storage unit. The (e) includes changing the first set power level and the first set flow rate over time based on the second rule. The (f) includes changing the second set power level and the second set flow rate over time based on the second rule.

10. The procedure according to claim 9, wherein, The (a) includes obtaining the first rule and the second rule from an external device via a network and storing them in the storage unit.

11. A plasma processing apparatus, comprising: Chamber; A radio frequency power supply is configured to generate radio frequency power to generate plasma within the cavity; and Control Department The control unit includes a storage unit and a processing unit. The storage unit is configured to store the first rule. The processing unit includes: The first formula acquisition unit acquires a first formula for performing a first plasma treatment process, the first formula including a first setting level of setting parameters; The second recipe acquisition unit acquires a second recipe for performing a second plasma treatment process, the second recipe including a second setting level of the set parameters; The transition recipe generation unit generates a transition recipe for performing a transition process between the first plasma processing step and the second plasma processing step. The transition recipe includes a plurality of transition setting levels that vary from the first setting level to the second setting level according to the first rule. A first formula modification unit changes the first formula over time according to the operating time of the radio frequency power supply. The first formula modification unit includes changing the first set level over time. The second formula modification unit changes the second formula over time according to the operating time of the RF power supply. The second formula modification unit includes changing the second set level over time. The transition formula modification unit modifies the transition formula based on the modified first formula and the modified second formula. The modified transition formula includes multiple modified transition setting levels that change from the modified first setting level to the modified second setting level according to the first rule.

12. The plasma processing apparatus according to claim 11, wherein, The control unit also includes a rule acquisition unit, which is configured to acquire the first rule from an external device via a network and store it in the storage unit.

13. The plasma processing apparatus according to claim 12, wherein, The first recipe acquisition unit is configured to acquire the first recipe from the external device via the network and store it in the storage unit.

14. The plasma processing apparatus according to claim 11, wherein, The storage unit is configured to store the second rule. The first formula modification unit changes the first set level over time based on the second rule. The second formula modification unit changes the second setting level over time based on the second rule.

15. The plasma processing apparatus according to claim 14, wherein, The control unit also includes a rule acquisition unit, which is configured to acquire the first rule and the second rule from an external device via a network and store them in the storage unit.

16. The plasma processing apparatus according to claim 11, wherein, The set parameters are at least one of the following: the power level of the radio frequency power, the flow rate of the processing gas supplied to the chamber, and the pressure inside the chamber.

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