Assembly substrate structure for display pixel, semiconductor light emitting element package for display pixel, and display device including same

Abstract

Embodiments relate to an assembly substrate structure for a display pixel, a semiconductor light emitting element package for a display pixel, and a display device including the same. An assembly substrate structure for display pixels according to an embodiment may include a circular first assembly hole disposed in a first region of a predetermined assembly substrate, a second assembly hole disposed in a second region of the assembly substrate, and an elliptical third assembly hole disposed in a third region of the assembly substrate. Each of the first assembly hole, the second assembly hole, and the third assembly hole may include a width in a first direction and a width in a second direction perpendicular to the first direction. The amount of increase in the width of the second assembly hole and the third assembly hole in the first direction increases at a predetermined exclusive interval based on the width of the first assembly hole in the first direction.

Description

Technical Field

[0001] The embodiments relate to an assembly substrate structure for display pixels, a semiconductor light-emitting element package for display pixels, and a display device including the thereof. Background Technology

[0002] Large-area displays include liquid crystal displays (LCDs), OLED displays, and micro-LED displays.

[0003] Micro-LED displays are displays that use semiconductor light-emitting elements, namely micro-LEDs, with a diameter or cross-sectional area of ​​less than 100μm as display elements.

[0004] Micro-LED displays use semiconductor light-emitting elements, namely micro-LEDs, as display elements, thus possessing excellent performance in many characteristics such as brightness ratio, response speed, color reproduction rate, viewing angle, luminance, resolution, lifespan, luminous efficiency, or brightness.

[0005] In particular, micro-LED displays can separate and combine images in a modular manner, thus having the advantages of freely adjustable size or resolution and being able to demonstrate the advantages of flexible displays.

[0006] However, large-scale micro-LED displays require millions of micro-LEDs, which presents a technical challenge in rapidly and accurately transferring micro-LEDs onto the display panel.

[0007] In recent years, the transfer technologies developed include pick and place process, laser lift-off method, and self-assembly method.

[0008] Among them, the self-assembly method, which is a way for semiconductor light-emitting elements to move to the assembly position by themselves in the fluid, is a way that is beneficial for display devices that can display large screens.

[0009] In recent years, micro-LED structures suitable for self-assembly have been disclosed in U.S. Patent No. 9,825,202, etc., but research on the technology of manufacturing displays through the self-assembly of micro-LEDs is still immature.

[0010] In particular, in the past, when millions of semiconductor light-emitting elements were rapidly transferred on large displays, the transfer speed could be increased, but this may lead to an increase in the transfer error rate, resulting in a technical problem of decreased transfer yield.

[0011] In related technologies, attempts have been made to perform a transfer process using a self-assembly method based on dielectrophoresis (DEP), but the self-assembly rate decreases due to factors such as the non-uniformity of DEP forces.

[0012] On the other hand, according to non-public internal technology, a technique is being researched to simultaneously assemble red (R) micro-LED chips, green (G) micro-LED chips, and blue (B) LED chips using dielectrophoresis.

[0013] However, in order to accurately assemble the R (red), G (green), and B (blue) LED chips into the assembly hole, research is being conducted on the exclusiveness of chip shapes that result in different top-view cross-sectional shapes for the R (red), G (green), and B (blue) LED chips.

[0014] For example, according to non-disclosed internal technology, the top view of the R (red) LED chip is formed into a circular cross-section, and based on this, the major axis is extended at certain intervals and the minor axis is reduced to form two elliptical shapes to manufacture B (blue) LED and G (green) LED, and such assembly hole patterns (1 circular and 2 elliptical) corresponding to the circular and elliptical LEDs are formed on the substrate.

[0015] In addition, to assemble LEDs inside the assembly holes, spaced assembly electrodes are formed inside the assembly holes and arranged to overlap on the LED chip. Then, an electric field is formed between the two opposing assembly electrodes, and the micro-LED is assembled using dielectric force.

[0016] However, according to internal research, even though the shapes of R (red), G (green), and B (blue) LED chips are exclusive, as the area difference between elliptical and circular LED chips increases, the difference in dielectric force (DEPforce) increases. As a result, the DEP force of elliptical LED chips decreases, leading to a problem of low assembly rate.

[0017] In particular, in recent years, research has been conducted on the technology of using micro-LED displays in 4K, 8K and other UHD (Ultra High Definition) TVs or VR, AR, XR and other applications. Micro-LEDs used in such UHD TVs or VR, AR, XR and other applications need to have a size of less than 20μm, for example less than 10μm.

[0018] However, according to the research results of the internal technology, in order to ensure the exclusivity of the shape differences between R (red), G (green), and B (blue) LED chips, the size of the benchmark circular chip must be at least 42μm in order to represent the remaining two elliptical shapes in an exclusive manner.

[0019] Therefore, according to the internal technology, there is a contradiction that in order to ensure the exclusivity of the shape among R (red), G (green), and B (blue) LED chips, the size of the R (red), G (green), and B (blue) LED chips cannot be reduced to less than 42μm. There is an urgent need to develop a micro-LED size and DEP assembly technology that can be used in UHD TVs or VR, AR, XR, etc.

[0020] In particular, when the LED chip size is designed to be below 20μm, the difference in dielectric efflux force (DEP force) is further amplified, resulting in a decrease in assembly efficiency. Summary of the Invention

[0021] Technical issues

[0022] One technical challenge of this embodiment is to ensure the exclusivity between R (red), G (green), and B (blue) LED chips while having a micro-LED size that can be used in UHD TVs, VR, AR, XR, etc., thereby increasing the assembly probability of R (red), G (green), and B (blue) LED chips that can emit light of R (red), G (green), and B (blue) colors.

[0023] Another technical challenge of the embodiments is to improve the assembly probability while achieving uniform dielectric force for LED chips of each color in the self-assembly method using dielectrophoresis (DEP).

[0024] means of solving technical problems

[0025] The display pixel assembly substrate structure of the embodiment may include: a circular first assembly hole disposed in a first region of a defined assembly substrate; a second assembly hole disposed in a second region of the assembly substrate; and an elliptical third assembly hole disposed in a third region of the assembly substrate.

[0026] The first assembly hole, the second assembly hole, and the third assembly hole may each include a width in a first direction and a width in a second direction perpendicular to the first direction.

[0027] The increase in the width of the second assembly hole and the third assembly hole in the first direction can be based on the width of the first assembly hole in the first direction and increased at a predetermined exclusive interval.

[0028] The reduction in the width of the second assembly hole and the third assembly hole in the second direction can be staggered based on the width of the first assembly hole in the second direction.

[0029] The reduction in the width of the second assembly hole in the second direction may be greater than the reduction in the width of the third assembly hole in the second direction.

[0030] The width of the second assembly hole in the second direction may be smaller than the width of the third assembly hole in the second direction.

[0031] The aforementioned second assembly hole may include arcs on the upper and lower sides in the top view section.

[0032] The upper and lower sides of the aforementioned second assembly hole in the top view section may include a specified arc, based on half the width in the aforementioned first direction.

[0033] The top view of the aforementioned second assembly hole may include a symmetrical shape that narrows in the middle.

[0034] The top view of the second assembly hole 301b may include a dumbbell shape that narrows in the middle.

[0035] Additionally, the semiconductor light-emitting element package for the display pixel in the embodiment may include: a circular first semiconductor light-emitting element disposed in a first region of a defined assembly substrate; a second semiconductor light-emitting element disposed in a second region of the assembly substrate; and an elliptical third semiconductor light-emitting element disposed in a third region of the assembly substrate.

[0036] The first semiconductor light-emitting element, the second semiconductor light-emitting element, and the third semiconductor light-emitting element may each include a width in a first direction and a width in a second direction perpendicular to the first direction.

[0037] The increase in the width of the second semiconductor light-emitting element and the third semiconductor light-emitting element in the first direction can be based on the width of the first semiconductor light-emitting element in the first direction and increased at predetermined exclusive intervals.

[0038] The reduction in the width of the second semiconductor light-emitting element and the third semiconductor light-emitting element in the second direction can be alternately reduced based on the width of the first semiconductor light-emitting element in the second direction.

[0039] The reduction in width of the second semiconductor light-emitting element in the second direction may be greater than the reduction in width of the third semiconductor light-emitting element in the second direction.

[0040] The width of the second semiconductor light-emitting element in the second direction may be smaller than the width of the third semiconductor light-emitting element in the second direction.

[0041] The aforementioned second semiconductor light-emitting element may include arcs on the upper and lower sides in a top-view cross-section.

[0042] The upper and lower sides of the top view of the aforementioned second semiconductor light-emitting element may include a defined arc, based on half the width in the aforementioned first direction.

[0043] The top view cross-section of the aforementioned second semiconductor light-emitting element may include a symmetrical shape that narrows in the middle.

[0044] The top view cross-section of the aforementioned second semiconductor light-emitting element 301b may include a dumbbell shape that narrows in the middle.

[0045] The display device including semiconductor light-emitting elements in the embodiments may include any of the above-described assembly substrate structures for display pixels.

[0046] Additionally, the display device including a semiconductor light-emitting element in the embodiments may include any of the above-mentioned display pixels packaged with a semiconductor light-emitting element.

[0047] Invention Effects

[0048] According to the embodiments, while having a micro-LED size that can be used in HD TV, VR, AR, XR, etc., the exclusivity between R (red), G (green), and B (blue) LED chips is ensured, thereby increasing the assembly probability of R (red), G (green), and B (blue) LED chips that can emit light of R (red), G (green), and B (blue) colors themselves.

[0049] Furthermore, according to the embodiments, in the self-assembly method utilizing dielectrophoresis (DEP), it is possible to achieve uniform dielectrophoresis force for LED chips of various colors while increasing the assembly probability.

[0050] For example, ① unlike internal technology, even if the size of the LED chip is reduced to below 30μm, the area difference between the reference chip, i.e., the circular first semiconductor light-emitting element 350R, and the remaining second semiconductor light-emitting elements 350G and third semiconductor light-emitting elements 350B that are formed differently, can be controlled to about 10%.

[0051] Therefore, according to the embodiment of the display pixel assembly substrate structure and semiconductor light-emitting element package, the dielectric efflux force (DEP force) that acts on each chip can be controlled to an equal level during the simultaneous assembly of RGB chips, thereby improving the assembly rate.

[0052] Furthermore, in the case of the display pixel assembly substrate structure and the first semiconductor light-emitting element package in the applicable embodiment, the tilt angle (Θ) of the semiconductor light-emitting element located at the misassembled position can be controlled to be about 10° or more. As a result, in the case of the embodiment, the light-emitting element chip located at the misassembled position is removed by magnetic force, thereby improving the correct assembly rate and solving the problem of the screen effect of the LED chip blocking the assembly hole entrance.

[0053] ②In addition, in the case of semiconductor light-emitting element packaging in the applicable embodiment, the ratio of the long axis to the short axis between chips can be controlled to an appropriate level, such as 2.5 or less or 2.0 or less, thereby solving the problem of LED chip breakage in the LLO process.

[0054] ③ Furthermore, by controlling the ratio of the major axis to the minor axis to approximately 2.5 or less, the assembly probability of assembling into the assembly hole is improved. According to the embodiment, even when the exclusivity is improved by further increasing the difference in the top view cross-sectional shape of each assembly hole among the R (red), G (green), and B (blue) LED chips, by controlling the ratio of the major axis to the minor axis to approximately 2.5 or less, the assembly probability of assembling the second semiconductor light-emitting element and the third semiconductor light-emitting element into the second assembly hole and the third assembly hole, respectively, is improved.

[0055] ④ In addition, according to the embodiment, by increasing the area of ​​the irregularly shaped second semiconductor light-emitting element 350G and the elliptical third semiconductor light-emitting element 350B, the area of ​​the active layer serving as the light-emitting region is increased, thereby improving the brightness. Attached Figure Description

[0056] Figure 1 This is an example diagram of a living room in a residence equipped with the display device of the embodiment.

[0057] Figure 2 yes Figure 1 An enlarged view of the first panel area in the display device.

[0058] Figure 3 It is along Figure 2 A cross-sectional view of region A2 cut off by line B1-B2.

[0059] Figure 4 This is an illustrative diagram showing how the light-emitting element of the embodiment is assembled onto the substrate by a self-assembly method.

[0060] Figure 5 yes Figure 4 A magnified view of part of area A3.

[0061] Figure 6 This is an example diagram illustrating the relationship of DEP force as it varies with the tilt angle (Θ) on the surface of the assembly substrate.

[0062] Figure 7a This is a structural diagram of the assembly substrate of an embodiment.

[0063] Figure 7b It is configured in Figure 7a An example diagram of a semiconductor light-emitting element on an assembled substrate structure.

[0064] Figure 7c yes Figure 7a The diagram in the middle shows an example of the assembly holes.

[0065] Figure 8a This is a top view of the first display pixel assembly substrate structure 300A1 of the embodiment.

[0066] Figure 8b It is Figure 8a The illustration shows an example of overlapping assembly holes.

[0067] Figure 8c yes Figure 8a The enlarged view of the second assembly hole 301b shown in the figure.

[0068] Figure 8d It is assembled in Figure 8a The diagram shows an example of a first semiconductor light-emitting element package 350A on a first display pixel assembly substrate structure 300A1.

[0069] Figure 9a This is a top view of the second display pixel assembly substrate structure 300A2 in the embodiment.

[0070] Figure 9b It is Figure 9a The illustration shows an example of overlapping assembly holes. Detailed Implementation

[0071] The embodiments disclosed in this specification will now be described in detail with reference to the accompanying drawings. The suffixes 'module' and 'part' used in the following description regarding constituent elements are assigned or used interchangeably for ease of writing and do not inherently distinguish one from another. Furthermore, the accompanying drawings are provided to aid in understanding the embodiments disclosed in this specification, and the technical concepts disclosed in this specification are not limited to the contents of the drawings. Additionally, when referring to elements such as layers, regions, or substrates as existing 'on' other constituent elements, this indicates a situation where they exist directly on or between other constituent elements.

[0072] The display devices described in this specification may include digital TVs, mobile phones, smartphones, laptop computers, digital broadcasting terminals, PDAs (personal digital assistants), PMPs (portable multimedia players), navigation devices, SlatePCs, tablet PCs, Ultrabooks, desktop computers, etc. However, even for new product forms developed subsequently, the structure of the embodiments described in this specification can be applied to displayable devices.

[0073] The following describes a semiconductor light-emitting element and a display device including the same, according to an embodiment.

[0074] Figure 1 The living room of a residence is shown, in which the display device 100 of the embodiment is configured.

[0075] The display device 100 of the embodiment displays the status of various electronic products such as washing machine 101, robotic vacuum cleaner 102, and air purifier 103, communicates with each electronic product based on the IoT board, and can also control each electronic product based on user settings.

[0076] The display device 100 of the embodiment may include a flexible display disposed on a thin and flexible substrate. The flexible display retains the characteristics of conventional flat panel displays while also being able to be bent or rolled up like paper.

[0077] In a flexible display, time information is represented by independently controlling the emission of unit pixels arranged in a matrix. A unit pixel is the smallest unit used to represent a color. The unit pixels of a flexible display can be represented by light-emitting elements. In embodiments, the light-emitting elements can be micro-LEDs or nano-LEDs, but are not limited to these.

[0078] Figure 2 yes Figure 1 An enlarged view of the first panel area A1 in the display device.

[0079] according to Figure 2 The display device 100 in the embodiment is manufactured by splicing together multiple panel areas, such as the first panel area A1, in a functional and electrically connected manner.

[0080] The first panel area A1 may include a plurality of light-emitting elements 150 configured according to each unit pixel.

[0081] For example, a unit pixel may include a first sub-pixel, a second sub-pixel, and a third sub-pixel. For instance, multiple red light-emitting elements 150R may be configured in the first sub-pixel, multiple green light-emitting elements 150G may be configured in the second sub-pixel, and multiple blue light-emitting elements 150B may be configured in the third sub-pixel. A unit pixel may also include a fourth sub-pixel without any light-emitting elements, but this is not limited. On the other hand, the light-emitting element 150 may be a semiconductor light-emitting element.

[0082] then, Figure 3 It is along Figure 2 A cross-sectional view of region A2 cut off by line B1-B2.

[0083] Reference Figure 3 The display device 100 of the embodiment may include a substrate 200a, spaced wiring 201a, 202a, a first insulating layer 211a, a second insulating layer 211b, a third insulating layer 206, and a plurality of light-emitting elements 150.

[0084] The wiring may include a first wiring 201a and a second wiring 202a spaced apart from each other. The first wiring 201a and the second wiring 202a may serve as panel wiring for applying power to the light-emitting element 150 on the panel, and may also serve as assembly electrodes for generating dielectric force for assembly in the case of self-assembly of the light-emitting element 150.

[0085] Wiring 201a and 202a are formed of transparent electrode ITO or may include a metallic material with excellent conductivity. For example, wiring 201a and 202a may be formed of at least one of titanium (Ti), chromium (Cr), nickel (Ni), aluminum (Al), platinum (Pt), gold (Au), tungsten (W), and molybdenum (Mo) or alloys thereof.

[0086] A first insulating layer 211a may be disposed between the first wiring 201a and the second wiring 202a, and a second insulating layer 211b may be disposed on the first wiring 201a and the second wiring 202a. The first insulating layer 211a and the second insulating layer 211b may be an oxide film, a nitride film, etc., but are not limited thereto.

[0087] The light-emitting elements 150 may include a red light-emitting element 150R, a green light-emitting element 150G, and a blue light-emitting element 150B to constitute a sub-pixel, but are not limited to these. They may also have a red phosphor and a green phosphor to represent red and green respectively.

[0088] The substrate 200 can be formed of glass or polyimide. Alternatively, the substrate 200 can include flexible materials such as PEN (polyethylene naphthalate) and PET (polyethylene terephthalate). Furthermore, the substrate 200 can be made of a transparent material, but is not limited to these. The substrate 200 can be used as a support substrate on a panel, and can also be used as an assembly substrate when self-assembling light-emitting elements.

[0089] The third insulating layer 206 may include insulating and flexible materials such as polyimide, PEN, and PET, and may be integrally formed with the substrate 200 to form a substrate.

[0090] The third insulating layer 206 can be a conductive adhesive layer with adhesive and conductive properties. This conductive adhesive layer is flexible, thereby enabling the flexible function of the display device. For example, the third insulating layer 206 can be an anisotropic conductive film (ACF) or a conductive adhesive layer containing anisotropic conductive media and conductive particles. The conductive adhesive layer can be a layer with a relative thickness that exhibits electrical conductivity in the vertical direction or electrical insulation in the horizontal direction.

[0091] The spacing between wirings 201a and 202a is smaller than the width of the light-emitting element 150 and the width of the assembly hole 203, thereby enabling more precise fixation of the assembly position of the light-emitting element 150 utilizing the electric field.

[0092] A third insulating layer 206 is formed on wirings 201a and 202a, thereby protecting wirings 201a and 202a in the fluid 1200 and preventing leakage of current flowing on wirings 201a and 202a. The third insulating layer 206 can be formed as a single layer or multiple layers of inorganic insulators such as silicon dioxide and alumina, or organic insulators.

[0093] In addition, the third insulating layer 206 may include insulating and flexible materials such as polyimide, PEN, and PET, and may also be integrally formed with the substrate 200 to form a substrate.

[0094] The third insulating layer 206 has a partition through which an assembly hole 203 can be formed. For example, the third insulating layer 206 may include an assembly hole 203 for inserting a light-emitting element 150 (see Figure 45). Therefore, during self-assembly, the light-emitting element 150 can be easily inserted into the assembly hole 203 of the third insulating layer 206. The assembly hole 203 may be referred to as an insertion hole, a fixing hole, an alignment hole, etc.

[0095] The mounting hole 203 may have a shape and size corresponding to the shape of the light-emitting element 150 assembled to the corresponding position. This prevents the assembly of other light-emitting elements or multiple light-emitting elements in the mounting hole 203.

[0096] then, Figure 4 This diagram illustrates an example of assembling the light-emitting element of an embodiment onto a substrate via a self-assembly method. Figure 5 yes Figure 4 A magnified view of part of area A3. Figure 5 This diagram shows the A3 area rotated 180 degrees for ease of explanation.

[0097] based on Figure 4 and Figure 5 An example of assembling the semiconductor light-emitting element of the embodiment onto the display panel by utilizing a self-assembly method using an electromagnetic field will be described.

[0098] The assembly substrate 200 described below can be used as a panel substrate in a display device after the light-emitting elements are assembled, but the embodiments are not limited thereto.

[0099] Reference Figure 4 The semiconductor light-emitting element 150 can be placed into a cavity 1300 filled with fluid 1200. The semiconductor light-emitting element 150 moves towards the substrate 200 via a magnetic field generated by the assembly device 1100. At this time, the light-emitting element 150 adjacent to the assembly hole 203 of the assembly substrate 200 can be assembled into the assembly hole 230 by the dielectric force generated by the electric field of the assembly electrode. The fluid 1200 can be ultrapure water or other types of water, but is not limited to this. The cavity can be referred to as a water tank, box, container, etc.

[0100] After the semiconductor light-emitting element 150 is inserted into the cavity 1300, the assembly substrate 200 can be disposed on the cavity 1300. According to an embodiment, the assembly substrate 200 can be inserted into the cavity 1300.

[0101] Reference Figure 5 As shown in the figure, the semiconductor light-emitting element 150 can be embodied by a vertical semiconductor light-emitting element, but it is not limited to this and a horizontal light-emitting element can also be used.

[0102] The semiconductor light-emitting element 150 may include a magnetic layer (not shown) containing a magnetic material. The magnetic layer may include a magnetic metal such as nickel (Ni). The semiconductor light-emitting element 150, having included the magnetic layer, can be moved toward the substrate 200 by a magnetic field generated by the assembly apparatus 1100 when immersed in a fluid. The magnetic layer may be disposed on the upper side, lower side, or both sides of the light-emitting element.

[0103] The aforementioned semiconductor light-emitting element 150 may include a passivation layer 156 surrounding its upper surface and sides. The passivation layer 156 may be formed by inorganic insulators such as silicon dioxide or aluminum oxide through methods such as PECVD, LPCVD, or sputtering deposition. Alternatively, the passivation layer 156 may be formed by spin-coating organic materials such as photoresist or polymers.

[0104] The aforementioned semiconductor light-emitting element 150 may include a first conductive semiconductor layer 152a, a second conductive semiconductor layer 152c, and an active layer 152b disposed therebetween. The first conductive semiconductor layer 152a may be an n-type semiconductor layer, and the second conductive semiconductor layer 152c may be a p-type semiconductor layer, but is not limited thereto.

[0105] The first conductive semiconductor layer 152a can be connected to the first electrode, and the second conductive semiconductor layer 152c can be connected to the second electrode. Therefore, a portion of the first conductive semiconductor layer 152a and the second conductive semiconductor layer 152c can be exposed to the outside. Thus, after the semiconductor light-emitting element 150 is assembled onto the assembly substrate 200, a portion of the passivation layer 156 can be etched during the manufacturing process of the display device.

[0106] The assembly substrate 200 may include a pair of first assembly electrodes 201 and second assembly electrodes 202 corresponding to the semiconductor light-emitting element 150 to be assembled. The first assembly electrodes 201 and second assembly electrodes 202 may be formed by stacking a single metal or metal alloy, metal oxide, etc. into multiple layers.

[0107] The first assembly electrode 201 and the second assembly electrode 202 emit an electric field when an alternating voltage is applied, thereby fixing the semiconductor light-emitting element 150 inserted into the assembly hole 203 by dielectric force. The spacing between the first assembly electrode 201 and the second assembly electrode 202 can be smaller than the width of the semiconductor light-emitting element 150 and the width of the assembly hole 203, so that the assembly position of the semiconductor light-emitting element 150 utilizing the electric field can be fixed more precisely.

[0108] An insulating layer 212 is formed on the first assembly electrode 201 and the second assembly electrode 202, thereby protecting the first assembly electrode 201 and the second assembly electrode 202 in the fluid 1200 and preventing leakage of current flowing on the first assembly electrode 201 and the second assembly electrode 202. For example, the insulating layer 212 can be formed as a single layer or multiple layers of inorganic insulators such as silicon dioxide and alumina, or organic insulators. The insulating layer 212 can have a minimum thickness for preventing damage to the first assembly electrode 201 and the second assembly electrode 202 during the assembly of the semiconductor light-emitting element 150, and can have a maximum thickness for stable assembly of the semiconductor light-emitting element 150.

[0109] A partition 207 may be formed on the upper part of the insulating layer 212. A portion of the partition 207 may be located on the upper part of the first assembly electrode 201 and the second assembly electrode 202, and the remaining portion may be located on the upper part of the assembly substrate 200.

[0110] On the other hand, when manufacturing the assembly substrate 200, a portion of the partition wall formed on the entire upper part of the insulating layer 212 is removed, thereby forming assembly holes 203 for bonding and assembling the semiconductor light-emitting elements 150 to the assembly substrate 200 respectively.

[0111] Assembly holes 203 for bonding semiconductor light-emitting elements 150 can be formed on the assembly substrate 200, and the surface with the assembly holes 203 can contact the fluid 1200. The assembly holes 203 can guide the semiconductor light-emitting elements 150 to the correct assembly position.

[0112] On the other hand, the assembly hole 203 may have a shape and size corresponding to the shape of the semiconductor light-emitting element 150 to be assembled to the corresponding position. Therefore, it is possible to prevent the assembly of other semiconductor light-emitting elements or multiple semiconductor light-emitting elements into the assembly hole 203.

[0113] Re-reference Figure 4 After the assembly substrate 200 is disposed in the cavity, the assembly device 1100, which applies a magnetic field, can move along the assembly substrate 200. The assembly device 1100 can be a permanent magnet or an electromagnetic device.

[0114] To maximize the area generating the magnetic field within the fluid 1200, the assembly device 1100 can move in contact with the assembly substrate 200. According to an embodiment, the assembly device 1100 may include a plurality of magnetic bodies or include a magnetic body of a size corresponding to the assembly substrate 200. In this case, the movement distance of the assembly device 1100 can be limited to a predetermined range.

[0115] By generating a magnetic field by the assembly device 1100, the semiconductor light-emitting element 150 in the cavity 1300 can move toward the assembly device 1100 and the assembly substrate 200.

[0116] Reference Figure 5 As the semiconductor light-emitting element 150 moves toward the assembly device 1100, it can enter the assembly hole 203 and be fixed by the dielectric electrophoretic force (DEP force) formed by the electric field of the assembly electrode of the assembly substrate.

[0117] Specifically, assembly lines 201 and 202 can generate an electric field through an AC power supply, and a dielectric force is formed between assembly lines 201 and 202 through this electric field. The semiconductor light-emitting element 150 can be fixed in the assembly hole 203 on the substrate 200 through this dielectric force.

[0118] At this time, a specified solder layer (not shown) is formed between the light-emitting element 150 assembled on the assembly hole 203 of the substrate 200 and the assembly electrode, thereby providing bonding force for the light-emitting element 150.

[0119] Additionally, after assembly, a molding layer (not shown) can be formed in the assembly holes 203 of the assembly substrate 200. The molding layer can be a transparent resin layer or a resin layer including reflective and scattering materials.

[0120] By utilizing the self-assembly method of the aforementioned electromagnetic field, the time required to assemble semiconductor light-emitting elements onto the substrate can be drastically reduced, thus enabling the realization of large-area high-pixel displays more quickly and economically.

[0121] then, Figure 6 This is an illustrative diagram showing the relationship between the DEP force on the surface of the assembly hole 203 in the embodiment and the tilt angle Θ on the surface of the assembly substrate 200 of the micro-LED 150.

[0122] The semiconductor light-emitting element 150 of the embodiment, i.e., the micro-LED, may include a back metal layer (B-metal) with a magnetic layer on the back, and a passivation layer PV may be included on its upper surface.

[0123] According to the embodiment, it was observed that when the micro-LED 150 approaches the assembly hole 203 at different angles (Θ) relative to the surface of the assembly substrate 200, various movements of the micro-LED are caused by the DEP force generated by the assembly electrodes 201, 202.

[0124] Reference Figure 6 In the cross-sectional view of the 3D model with an tilt angle Θ ranging from 0 to 90° (top left), the metal layer (B-metal) behind the micro-LED150 is moved toward the assembly electrodes 201 and 202 by the attractive force of the dielectric electrophoresis force (DEP force) of the positive (+).

[0125] Conversely, in the cross-sectional view (upper right end) of the 3D model with a tilt angle Θ ranging from 90 to 180°, the metal layer (B-metal) behind the micro-LED150 is subjected to an attractive force by the dielectric electrophoretic force (DEP force) of the cathode (-), thereby causing the passivation layer PV at the upper end of the micro-LED to move towards the assembly electrodes 201 and 202.

[0126] On the other hand, such as Figure 6 As shown, in dielectric electrophoretic assembly using DEP force, the dielectric electrophoretic force varies greatly depending on the height of the assembly hole 203 and the tilt angle between the assembly substrate 200 and the semiconductor light-emitting element 150 in the assembly hole 203. For example, even if the tilt angle Θ is in the range of 0-90°, if the tilt angle Θ exceeds about 10°, there is a dielectric electrophoretic force selectivity that significantly reduces the dielectric electrophoretic force.

[0127] For example, when a light-emitting element chip that does not correspond to the assembly hole is placed on the assembly hole, its tilt angle is controlled to be more than about 10°. In this case, the magnetic force applied to the light-emitting element chip by the magnet is greater than the dielectric electrophoretic force (DEP force) applied to the light-emitting element chip. Therefore, the light-emitting element chip located at the misassembled position is removed by itself, thereby improving the technical effect of increasing the probability of correct assembly.

[0128] then, Figure 7a This is the assembly substrate structure of the embodiment. Figure 7b It is configured in Figure 7a An example diagram of a semiconductor light-emitting element on an assembled substrate structure. Additionally, Figure 7c yes Figure 7a The diagram in the middle shows an example of the assembly holes.

[0129] In this embodiment, the mounting holes of the substrate may have a shape and size corresponding to the shape of the semiconductor light-emitting element assembled to the corresponding position. This prevents the assembly of other semiconductor light-emitting elements or multiple semiconductor light-emitting elements in the mounting holes.

[0130] In addition, according to non-public internal technology, a technology is being researched to simultaneously assemble R (red) micro-LED chips, G (green) micro-LED chips, and B (blue) LED chips using dielectrophoresis.

[0131] However, in order to accurately assemble the R (red), G (green), and B (blue) LED chips into the assembly hole, the chip shape exclusivity of having different top-view cross-sectional shapes for the R (red), G (green), and B (blue) LED chips is being studied.

[0132] For example, refer to Figure 7a The assembly substrate structure 200A1 of the embodiment may include a plurality of first assembly electrodes 201 and second assembly electrodes 202 arranged spaced apart from each other.

[0133] Alternatively, embodiments may include partitions 207 disposed on the respective assembled electrodes 201, 202.

[0134] The aforementioned partition 207 may include a first assembly hole 203a, a second assembly hole 203b, and a third assembly hole 203c, a portion of which is removed to accommodate the shape of the light-emitting element to be assembled. The insulating layer 212 may be exposed through the aforementioned first assembly hole 203a, second assembly hole 203b, and third assembly hole 203c.

[0135] The top view of the first assembly hole 203a can be circular, and the top view of the second assembly hole 203b and the third assembly hole 203c can be elliptical.

[0136] Reference Figure 7b A first semiconductor light-emitting element 150R, a second semiconductor light-emitting element 150G, and a third semiconductor light-emitting element 150B can be assembled in the first assembly hole 203a, the second assembly hole 203b, and the third assembly hole 203c, respectively. The first semiconductor light-emitting element 150R can be an R (red) LED chip, the second semiconductor light-emitting element 150G can be a G (green) LED chip, and the third semiconductor light-emitting element 150B can be a B (blue) LED chip.

[0137] The top view of the first assembly hole 203a can be circular, while the top view of the second assembly hole 203b and the third assembly hole 203c can be elliptical.

[0138] Specifically, refer to Figure 7c The first assembly hole 203a may have a first width a1 in a first direction based on a first axis (1st), and a first width b1 in a second direction based on a second axis (2nd) perpendicular to the first axis. The first width a1 in the first direction and the first width b1 in the second direction may be the same, but are not limited thereto.

[0139] Next, the second assembly hole 203b may have a second width a2 in the first direction and a second width b2 in the second direction, and the third assembly hole 203c may have a third width a3 in the first direction and a third width b3 in the second direction.

[0140] For example, the first assembly hole 203a may include a circular cross-section with a first width a1 in the first direction and a first width b1 in the second direction, both of which are 38 μm.

[0141] At this time, the second assembly hole 203b and the third assembly hole 203c can have a predetermined exclusive interval based on the first assembly hole 203a. For example, the second assembly hole 203b and the third assembly hole 203c can increase the width of the major axis, such as in the first direction, and decrease the width of the minor axis, such as in the second direction, based on the first assembly hole 203a with an exclusive interval. The aforementioned exclusive interval can be about 5μm to 10μm, but is not limited to this.

[0142] For example, if the first assembly hole 203a has a circular cross-section with a first width a1 in the first direction and a first width b1 in the second direction of 38 μm and an exclusive interval of 7 μm, the second width a2 in the first direction of the second assembly hole 203b can be 45 μm and the second width b2 in the second direction can be 31 μm.

[0143] In addition, the third width a3 in the first direction of the aforementioned third assembly hole 203c can be 52 μm, and the third width b3 in the second direction can be 24 μm, but is not limited to these.

[0144] As mentioned above, in recent years, research has been conducted on the use of micro-LED displays for UHD (Ultra High Definition) TVs such as 4K and 8K, or VR, AR, and XR. Micro-LEDs used in such UHD TVs or VR, AR, and XR require a size of less than 20μm, for example, less than 10μm.

[0145] However, according to the results of internal technology research, in order to ensure the exclusivity of the shape differences between R (red), G (green), and B (blue) LED chips, the size of the benchmark circular chip must be at least 42μm to reflect the exclusivity of the remaining two elliptical chip shapes.

[0146] Therefore, according to the internal technology, there is a contradiction that in order to ensure the exclusivity of the shape among R (red), G (green), and B (blue) LED chips, the size of the R (red), G (green), and B (blue) LED chips cannot be reduced to less than 42μm. Therefore, there is an urgent need to develop micro-LED size and DEP assembly technology that can be used in UHD TVs or VR, AR, XR, etc.

[0147] Specifically, in the case of an exclusive structure where internal technology is applied, the following problems were discovered in internal research.

[0148] ① First, in order to improve DEP selectivity by increasing the deviation of dielectric efflux force in each assembly hole among the R (red), G (green), and B (blue) LED chips, the top-view cross-sectional shape difference of the R (red), G (green), and B (blue) LED chips is further increased to improve exclusivity. However, the smaller the chip size, the greater the area difference between the reference chip, i.e., the circular first semiconductor light-emitting element 150R, and the elliptical semiconductor light-emitting element, especially the elliptical third semiconductor light-emitting element 150B.

[0149] For example, when the size of the circular first semiconductor light-emitting element 150R is set to 38μm and the exclusivity interval is set to 7μm, the areas of the elliptical second semiconductor light-emitting element 150G and the elliptical third semiconductor light-emitting element 150B are approximately 96% and 86% of the area of ​​the circular first semiconductor light-emitting element 150R, respectively.

[0150] However, when the size of the circular first semiconductor light-emitting element 150R is set to 25μm and the exclusivity interval is set to 7μm, the area of ​​the elliptical second semiconductor light-emitting element 150G and the elliptical third semiconductor light-emitting element 150B is approximately 92% and 68% of the area of ​​the circular first semiconductor light-emitting element 150R, respectively, and the size ratio of the elliptical third semiconductor light-emitting element 150B is significantly reduced.

[0151] Specifically, when the size of the circular first semiconductor light-emitting element 150R is set to 21μm and the exclusivity interval is set to 7μm, the areas of the elliptical second semiconductor light-emitting element 150G and the elliptical third semiconductor light-emitting element 150B are reduced to approximately 88% and 49% of the area of ​​the circular first semiconductor light-emitting element 150R, respectively, and the size ratio of the elliptical third semiconductor light-emitting element 150B is drastically reduced.

[0152] On the other hand, when the dielectric electrophoretic force (DEP force) acting on each chip is equal during the simultaneous assembly of RGB chips, it is beneficial to improve the assembly rate.

[0153] However, the dielectric electrophoretic force (DEP force) corresponds to the lower area of ​​the LED chip, and as mentioned above... Figure 6 This indicates that the tilt angle of the LED chip in the assembly hole is also closely related.

[0154] However, as mentioned above Figures 7a to 7c As explained, with the dramatic difference in area between the circular first semiconductor light-emitting element 150R and the elliptical third semiconductor light-emitting element 150B, the difference in dielectric force (DEPforce) applied to each LED chip varies considerably depending on the area ratio. This becomes a more serious problem when the size of the LED chip is reduced to below 30μm.

[0155] Furthermore, according to internal research, even though the shapes of R (red), G (green), and B (blue) LED chips are exclusive, the applied dielectric excitation force (DEP force) is similar or not significantly different. This leads to a screen effect problem where other LED chips block the assembly hole entrance. For example, in the assembly hole of the R (red) LED chip, a G (green) or B (blue) LED chip may block the entrance of the assembly hole, resulting in a decrease in DEP selectivity among the LED chips. Consequently, the simultaneous assembly rate of the three-color R (red), G (green), and B (blue) chips decreases.

[0156] For example, research in the internal technology has found that when an elliptical second semiconductor light-emitting element 150G is present in the circular first assembly hole 230a, the tilt angle (Θ) between it and the assembly substrate 200 is approximately 9.76°.

[0157] Furthermore, research in the internal technology revealed that when an elliptical third semiconductor light-emitting element 150B is present in the circular first assembly hole 230a, the tilt angle (Θ) between it and the assembly substrate 200 is approximately 9.45°.

[0158] However, as Figure 6 As shown, only when the tilt angle Θ exceeds approximately 10° does the dielectrophoretic force (DEP force) decrease significantly, resulting in a dielectrophoretic force selectivity.

[0159] However, research in the internal technology revealed that when an elliptical second semiconductor light-emitting element 150G or an elliptical third semiconductor light-emitting element 150B is present in the circular first assembly hole 230a, the tilt angles (Θ) are approximately 9.76° and approximately 9.45°, respectively, which are less than 10°.

[0160] Therefore, the dielectric force (DEP force) applied to the elliptical second light-emitting element chip 150G and the third light-emitting element chip 150B is at a fairly high level, and the dielectric force (DEP force) applied to the chip located at the misassembled position can be greater than the magnetic force applied by the magnet.

[0161] Therefore, under the current technology, it is difficult to improve the correct assembly probability by using magnetic force to remove light-emitting element chips located in misassembled positions. Even if the shapes of R (red), G (green), and B (blue) LED chips are exclusive, the applied dielectric excitation force (DEP force) is similar or not significantly different, resulting in a screen effect problem where other LED chips block the assembly hole entrance. For example, in the assembly hole of the R (red) LED chip, a screen effect problem occurs where G (green) or B (blue) LED chips block the entrance of the assembly hole, leading to a decrease in DEP selectivity among the LED chips and a simultaneous decrease in the assembly rate.

[0162] ② Furthermore, the smaller the chip size, the greater the ratio of the major axis to the minor axis of the elliptical third semiconductor light-emitting element 150B. For example, in the case of a 38μm circular chip, the ratio of the major axis to the minor axis (a3 / b3) of the elliptical third semiconductor light-emitting element 150B is approximately 2.17, while in the case of a 21μm circular chip, the ratio of the major axis to the minor axis (a3 / b3) of the elliptical third semiconductor light-emitting element 150B increases to approximately 5.0. Thus, with a larger ratio of the major axis to the minor axis, there is a problem that the chip is easily broken during processes such as the LLO (Lase Lift Off) process of the LED chip.

[0163] ③ Furthermore, by increasing the ratio of the major axis to the minor axis, the assembly rate to the assembly hole will decrease. For example, we will explain this by assuming the assembly probability of a circular chip is 100%.

[0164] To improve DEP selectivity by increasing the dielectric electrophoretic force deviation in each assembly hole among R (red), G (green), and B (blue) LED chips, and further increasing the top-view cross-sectional shape differences of the R (red), G (green), and B (blue) LED chips to improve exclusivity, the shape of the elliptical LED chip with an extended major axis and the elliptical assembly hole with an extended major axis presents a problem of decreased assembly probability.

[0165] For example, when the size of the circular first semiconductor light-emitting element 150R is set to 38μm and the exclusivity interval is set to 7μm, the area ratio of the elliptical chip with a major axis of 38μm is approximately 46% compared to the area ratio of the 38μm-sized circular first semiconductor light-emitting element 150R. Therefore, the assembly probability is also reduced to approximately 46%.

[0166] In particular, when the size of the circular first semiconductor light-emitting element 150R is set to 21μm and the exclusivity interval is set to 7μm, the area ratio of the elliptical chip with a major axis of 21μm is about 18% compared to the area ratio of the 21μm circular first semiconductor light-emitting element 150R. Therefore, there is a problem that the assembly probability is drastically reduced to about 18%.

[0167] ④ In addition, the reduction in the area of ​​the elliptical third semiconductor light-emitting element 150B leads to a relative reduction in the area of ​​the light-emitting region, i.e., the active layer, resulting in a decrease in brightness.

[0168] One technical challenge of this embodiment is to provide an assembly substrate structure for a pixel semiconductor light-emitting element, a pixel semiconductor light-emitting element, and a display device including the thereof, which, while having a micro-LED size that can be used in UHD TVs, VR, AR, XR, etc., ensures the exclusivity between R (red), G (green), and B (blue) LED chips, thereby increasing the probability of simultaneous assembly of R (red), G (green), and B (blue) LED chips that can emit light of R (red), G (green), and B (blue) colors.

[0169] Another technical challenge of the embodiments is to provide an assembly substrate structure for a semiconductor light-emitting element, a semiconductor light-emitting element for a pixel, and a display device including the thereof, which improves the DEP selectivity of LED chips for each color in a self-assembly method using dielectrophoresis (DEP), while also improving the assembly probability.

[0170] Hereinafter, with reference to the accompanying drawings, specific features of embodiments for solving the technical problems of the present application will be described.

[0171] <First Embodiment>

[0172] Figure 8a This is a top view of the first display pixel assembly substrate structure 300A1 of the embodiment. Figure 8b It is Figure 8a The illustration shows the overlapping of the various assembly holes. Figure 8c yes Figure 8a An enlarged view of the second assembly hole 301b shown.

[0173] Figure 8d It is assembled in Figure 8a An illustrative diagram of the first semiconductor light-emitting element package 350A on the first display pixel assembly substrate structure 300A1.

[0174] Hereinafter, the 'assembly substrate structure for display pixels' will be referred to as the 'assembly substrate structure'.

[0175] Reference Figure 8a The first assembly substrate structure 300A1 of the embodiment may include a plurality of first assembly electrodes 201 and second assembly electrodes 202 arranged apart from each other, and assembly partitions 207 disposed on each assembly electrode 201, 202.

[0176] The aforementioned assembly partition 207 may include a first assembly hole 301a, a second assembly hole 301b, and a third assembly hole 301c, a portion of which is removed to accommodate the shape of the light-emitting element to be assembled. The insulating layer 212 may be exposed through the aforementioned first assembly hole 301a, second assembly hole 301b, and third assembly hole 301c.

[0177] The top view of the first assembly hole 301a can be circular, and the top view of the third assembly hole 301c can be elliptical. In this case, the top view of the second assembly hole 301b can be heterotypical.

[0178] For example, the top view of the second assembly hole 301b may be neither circular nor elliptical.

[0179] For example, in the top view of the second assembly hole 301b, the upper and lower sides can have a specified arc, which is half the length of the major axis.

[0180] For example, the top view of the second assembly hole 301b can be a symmetrical shape that narrows in the middle. For example, the top view of the second assembly hole 301b can be a dumbbell shape that narrows in the middle, but is not limited to this.

[0181] then, Figure 8d It is assembled in Figure 8a An illustrative diagram of the first semiconductor light-emitting element package 350A on the first display pixel assembly substrate structure 300A1.

[0182] Reference Figure 8d The first semiconductor light-emitting element 350R, the second semiconductor light-emitting element 350G, and the third semiconductor light-emitting element 350B can be assembled in the first assembly hole 301a, the second assembly hole 301b, and the third assembly hole 301c, respectively. The first semiconductor light-emitting element 350R can be an R (red) LED chip, the second semiconductor light-emitting element 350G can be a G (green) LED chip, and the third semiconductor light-emitting element 350B can be a B (blue) LED chip, but is not limited thereto.

[0183] The shapes of the first semiconductor light-emitting element 350R, the second semiconductor light-emitting element 350G, and the third semiconductor light-emitting element 350B can correspond to the shapes of the first assembly hole 301a, the second assembly hole 301b, and the third assembly hole 301c, respectively.

[0184] The following description focuses on the first display pixel assembly substrate structure 300A1. Such features can also be applied to the first semiconductor light-emitting element package 350A assembled on the first display pixel assembly substrate structure 300A1.

[0185] Re-reference Figure 8a The first assembly hole 301a may have a first width a1 in a first direction based on a first axis (1st), and a first width b1 in a second direction based on a second axis (2nd) perpendicular to the first axis. The first width a1 in the first direction and the first width b1 in the second direction may be the same, but are not limited thereto.

[0186] Next, the second assembly hole 301b may have a second width a2 in the first direction and a second width b2 in the second direction, and the third assembly hole 301c may have a third width a3 in the first direction and a third width b3 in the second direction.

[0187] For example, the first assembly hole 301a may include a circular cross-section with a first width a1 in the first direction and a first width b1 in the second direction, both of which are 25 μm.

[0188] In the first display pixel assembly substrate structure 300A1, based on the circular first assembly hole 301a, the increase in length in the long axis direction of the second assembly hole 301b and the third assembly hole 301c can have a certain exclusive interval.

[0189] Conversely, in the first display pixel assembly substrate structure 300A1, based on the circular first assembly hole 301a, the reduction in the minor axis length of the second assembly hole 301b and the third assembly hole 301c decreases alternately. For example, the reduction in the minor axis direction of the second assembly hole 301b may be greater than the reduction in the minor axis direction of the third assembly hole 301c. As a result, the second width b2 in the minor axis direction of the second assembly hole 301b may be smaller than the third width b3 in the minor axis direction of the third assembly hole 301c.

[0190] For example, the second assembly hole 301b and the third assembly hole 301c are on the long axis, i.e., in the first direction (1 st The direction is increased at regular exclusive intervals with the first assembly hole 301a as a reference.

[0191] For example, the second assembly hole 301b and the third assembly hole 301c are on the long axis, i.e., in the first direction (1 st In the direction of the first assembly hole 301a, the exclusivity interval can be provided with a regular exclusivity interval that increases with the degree of exclusivity interval.

[0192] For example, the second assembly hole 301b and the third assembly hole 301c are based on the first assembly hole 301a and their widths along the major axis, for example, in the first direction, are increased by an exclusive interval. The aforementioned exclusive interval can be approximately 5 μm to 10 μm, but is not limited thereto.

[0193] For example, if the first assembly hole 301a has a circular cross-section with a first width a1 in the first direction and a first width b1 in the second direction of 25 μm and an exclusive interval of 7 μm, the second width a2 in the first direction of the second assembly hole 301b can be 32 μm, and the third width a3 in the first direction of the third assembly hole 301c can be 39 μm, but is not limited thereto.

[0194] Conversely, the second assembly hole 301b and the third assembly hole 301c are in the minor axis, i.e., the second direction (2). st The direction of the first assembly hole 301a can have irregular exclusive spacing.

[0195] For example, the reduction in the minor axis direction of the second assembly hole 301b can be greater than the reduction in the minor axis direction of the third assembly hole 301c. Therefore, the second width b2 in the minor axis direction of the second assembly hole 301b can be smaller than the third width b3 in the minor axis direction of the third assembly hole 301c.

[0196] For example, the minor axis length b2 of the second assembly hole 301b can be smaller than the minor axis b3 of the third assembly hole 301c.

[0197] For example, if the first assembly hole 301a has a circular cross-section with a first width a1 in the first direction and a first width b1 in the second direction of 25 μm and an exclusive interval of 7 μm, the third width b3 in the second direction of the third assembly hole 301c can be 18 μm, and the second width b2 in the second direction of the second assembly hole 301b can be 11 μm.

[0198] Figure 8c yes Figure 8a An enlarged view of the second assembly hole 301b shown.

[0199] In the first display pixel assembly substrate structure 300A1, the top view cross section of the first assembly hole 301a can be circular, and the top view cross section of the third assembly hole 301c can be elliptical.

[0200] Conversely, the top view of the second assembly hole 301b can be heterotypical.

[0201] For example, the upper and lower sides of the top view of the second assembly hole 301b may have a specified arc, which is half the length of the major axis.

[0202] For example, the second assembly hole 301b may have a first curve r1 and a second curve r2 at its upper and lower ends in the long axis direction, and may include a first line s1 and a second line s2 connecting the two ends of the short axis and the two ends of the first curve r1, and may include a third line s3 and a fourth line s4 connecting the two ends of the short axis and the two ends of the second curve r2.

[0203] The first curve r1 and the second curve r2 mentioned above can be in the shape of arcs, but are not limited to this.

[0204] The first line s1, the second line s2, the third line s3, and the fourth line s4 mentioned above can be straight lines, but are not limited to them.

[0205] Continue to refer to Figure 8d The first semiconductor light-emitting element 350R, the second semiconductor light-emitting element 350G, and the third semiconductor light-emitting element 350B can be assembled in the first assembly hole 301a, the second assembly hole 301b, and the third assembly hole 301c, respectively.

[0206] The features of the first display pixel assembly substrate structure 300A1 described above can also be applied to the first semiconductor light-emitting element package 350A.

[0207] For example, re-referencing Figure 8a The first semiconductor light-emitting element 350R may have a first width c1 in a first direction based on a first axis (1st), and a first width d1 in a second direction based on a second axis (2nd) perpendicular to the first axis. The first width c1 in the first direction and the first width d1 in the second direction may be the same, but are not limited thereto.

[0208] Next, the second semiconductor light-emitting element 350G may have a second width c2 in the first direction and a second width d2 in the second direction, and the third semiconductor light-emitting element 350B may have a third width c3 in the first direction and a third width d3 in the second direction.

[0209] For example, the first semiconductor light-emitting element 350R may include a circular cross-section with a first width c1 in the first direction and a first width d1 in the second direction, both of which are 25 μm.

[0210] In the first semiconductor light-emitting element package 350A, with the circular first semiconductor light-emitting element 350R as a reference, the increase in length in the long axis direction of the second semiconductor light-emitting element 350G and the third semiconductor light-emitting element 350B can have a certain exclusive interval.

[0211] Conversely, in the first semiconductor light-emitting element package 350A, based on the circular first semiconductor light-emitting element 350R, the reduction in the minor axis length of the second semiconductor light-emitting element 350G and the third semiconductor light-emitting element 350B can be staggered. For example, the reduction in the minor axis direction of the second semiconductor light-emitting element 350G can be greater than the reduction in the minor axis direction of the third semiconductor light-emitting element 350B. Therefore, the second width d2 in the minor axis direction of the second semiconductor light-emitting element 350G can be smaller than the third width d3 in the minor axis direction of the third semiconductor light-emitting element 350B.

[0212] For example, the second semiconductor light-emitting element 350G and the third semiconductor light-emitting element 350B are in the first direction along the long axis (1 st The direction of the light-emitting element is increased at regular exclusive intervals with reference to the first semiconductor light-emitting element 350R.

[0213] For example, the second semiconductor light-emitting element 350G and the third semiconductor light-emitting element 350B are in the first direction along the long axis (1 stThe direction of the first semiconductor light-emitting element 350R is based on the exclusivity interval, which can have a regular exclusivity interval that increases with the degree of exclusivity interval.

[0214] For example, the second semiconductor light-emitting element 350G and the third semiconductor light-emitting element 350B increase the width of their major axes, for example, in a first direction, with an exclusive interval based on the first semiconductor light-emitting element 350R. The aforementioned exclusive interval may be about 5μm to 10μm, but is not limited thereto.

[0215] For example, if the first semiconductor light-emitting element 350R has a circular cross-section with a first width c1 in the first direction and a first width d1 in the second direction of 25 μm and an exclusive interval of 7 μm, the second width c2 in the first direction of the second semiconductor light-emitting element 350G can be 32 μm, and the third width c3 in the first direction of the third semiconductor light-emitting element 350B can be 39 μm, but is not limited thereto.

[0216] Conversely, the second semiconductor light-emitting element 350G and the third semiconductor light-emitting element 350B are in the short axis, i.e., the second direction (2 st The direction of the first semiconductor light-emitting element 350R can have an irregular exclusive spacing.

[0217] For example, the reduction in the minor axis direction of the second semiconductor light-emitting element 350G can be greater than the reduction in the minor axis direction of the third semiconductor light-emitting element 350B. Therefore, the second width d2 in the minor axis direction of the second semiconductor light-emitting element 350G can be smaller than the third width d3 in the minor axis direction of the third semiconductor light-emitting element 350B.

[0218] For example, the minor axis length d2 of the second semiconductor light-emitting element 350G can be smaller than the minor axis length d3 of the third semiconductor light-emitting element 350B.

[0219] For example, if the first semiconductor light-emitting element 350R has a circular cross-section with a first width c1 in the first direction and a first width d1 in the second direction of 25 μm and an exclusive interval of 7 μm, the third width d3 in the second direction of the third semiconductor light-emitting element 350B can be 18 μm, and the second width d2 in the second direction of the second semiconductor light-emitting element 350G can be 11 μm.

[0220] Furthermore, for example, if the first semiconductor light-emitting element 350R has a circular cross-section with a first width c1 in the first direction and a first width d1 in the second direction of 21 μm and an exclusive spacing of 7 μm, the width in the major axis direction can be increased by the exclusive spacing. For example, the second width c2 in the first direction of the second semiconductor light-emitting element 350G can be 28 μm, and the third width c3 in the first direction of the aforementioned third semiconductor light-emitting element 350B can be 35 μm, but it is not limited to these.

[0221] Conversely, the widths in the minor axis direction can be reduced alternately. For example, if the first semiconductor light-emitting element 350R has a circular cross-section with a first width c1 in the first direction and a first width d1 in the second direction of 21 μm and an exclusive interval of 7 μm, then in terms of the widths in the minor axis direction, the third width d3 in the second direction of the third semiconductor light-emitting element 350B can be 14 μm, and the second width d2 in the second direction of the second semiconductor light-emitting element 350G can be 7 μm.

[0222] The technical effects of the first display pixel assembly substrate structure 300A1 of the embodiment will now be explained. Furthermore, such technical effects can also be applied to the first semiconductor light-emitting element package 350A of the embodiment.

[0223] ① First, unlike internal technologies, even if the size of the LED chip is reduced to less than 30μm, the area difference between the circular first semiconductor light-emitting element 350R, which serves as the reference chip, and the remaining second semiconductor light-emitting elements 350G and third semiconductor light-emitting elements 350B, which have different shapes, can be controlled to a level where the dielectric force (DEP force) is uniform.

[0224] For example, the study found that when the size of the circular first semiconductor light-emitting element 350R is set to 25μm and the exclusivity interval is set to 7μm, the areas of the heterotypical second semiconductor light-emitting element 350G and the elliptical third semiconductor light-emitting element 350B are increased by about 110.45% and about 112.32% respectively compared with the area of ​​the circular first semiconductor light-emitting element 350R, resulting in an area difference of about 10%.

[0225] Furthermore, the study found that when the size of the circular first semiconductor light-emitting element 350R is set to 21μm and the exclusivity interval is set to 7μm, the areas of the irregular second semiconductor light-emitting element 350G and the elliptical third semiconductor light-emitting element 350B are approximately 104.8% and 111.11% of the area of ​​the circular first semiconductor light-emitting element 350R, respectively, resulting in an area difference of approximately 10%.

[0226] Therefore, the first display pixel assembly substrate structure 300A1 and / or the first semiconductor light-emitting element package 350A according to the embodiment control the dielectric efflux force (DEP force) acting on each chip to a uniform level during the simultaneous assembly of RGB chips, thereby achieving the technical effect of improving the assembly rate.

[0227] Additionally, as mentioned above Figure 6 As shown, when the tilt angle (Θ) in the assembly hole of the LED chip exceeds approximately 10°, the dielectric electrophoretic force (DEP force) decreases significantly, thus resulting in a dielectric electrophoretic force (DEP force) selectivity.

[0228] On the other hand, research from internal technology has revealed that when an elliptical second semiconductor light-emitting element 150G or an elliptical third semiconductor light-emitting element 150B is present in the circular first assembly hole 230a, the tilt angles (Θ) are approximately 9.76° and approximately 9.45°, respectively, which are less than 10°.

[0229] Therefore, the dielectric force (DEP force) applied to the elliptical second light-emitting element chip 150G and the third light-emitting element chip 150B is quite large, and the dielectric force (DEP force) applied to the chip located at the misassembled position can be greater than the magnetic force applied by the magnet.

[0230] Therefore, under the condition of internal technology, it is difficult to improve the correct assembly probability by removing the light-emitting element chip located in the wrong assembly position by magnetic force. Even if there is exclusivity in the shape of R (red), G (green), and B (blue) LED chips, the applied dielectric electrophoretic force (DEP force) is similar or not much different, so there is a screen effect where other LED chips block the assembly hole entrance.

[0231] Conversely, in the case of the first display pixel assembly substrate structure 300A1 and the first semiconductor light-emitting element package 350A in the applicable embodiment, the tilt angle (Θ) of the semiconductor light-emitting element located at the misassembled position can be controlled to be about 10° or more. Thus, in the case of the embodiment, the light-emitting element chip located at the misassembled position is removed by magnetic force, thereby improving the correct assembly probability and having the technical effect of solving the problem of the screen effect of LED chip blocking the assembly hole entrance.

[0232] For example, the study found that when a circular first semiconductor light-emitting element 350R or an elliptical third semiconductor light-emitting element 350B is present in the irregular second assembly hole 301b, the tilt angle (Θ) is about 17.8° and about 17.1° respectively, which is more than about 17°.

[0233] In addition, the study found that when a circular first semiconductor light-emitting element 350R or an irregularly shaped second semiconductor light-emitting element 350G is present in the elliptical third assembly hole 301c, the tilt angles (Θ) are approximately 12.9° and approximately 13.34°, respectively, which is more than 12°.

[0234] Therefore, the dielectric electrophoretic force (DEP force) applied to the light-emitting element chip located at the misassembled position is at a very weak level. Thus, the DEP force applied to the chip located at the misassembled position is less than the magnetic force applied by the magnet. As a result, the light-emitting element chip at the misassembled position is removed by itself by magnetic force, thereby improving the probability of correct assembly. This has a special technical effect that can solve the problem of the screen effect of LED chips at the misassembled position blocking the assembly hole entrance.

[0235] ②In addition, in the case of the first semiconductor light-emitting element package 350A in the applicable embodiment, the ratio of the major axis to the minor axis between the chips can be controlled to an appropriate level, for example, 2.5 or less, thereby solving the problem of LED chips breaking in the LLO process.

[0236] For example, in the case of a 25μm circular chip, the ratio of the major axis to the minor axis (a3 / b3) of the elliptical third semiconductor light-emitting element 350B is approximately 2.17, and in the case of a 21μm circular chip, the ratio of the major axis to the minor axis (a3 / b3) of the elliptical third semiconductor light-emitting element 350B is approximately 2.5. Thus, by controlling the ratio of the major axis to the minor axis to approximately 2.5 or less, the elliptical third semiconductor light-emitting element 350B achieves the technical effect of preventing breakage during processes such as LLO (Light Optimization) processing.

[0237] ③ Furthermore, by controlling the ratio of the major axis to the minor axis to approximately 2.5 or less, the assembly probability of assembling into the assembly hole is improved. According to the embodiment, even when the exclusivity is improved by further increasing the difference in the top view cross-sectional shape of each assembly hole among the R (red), G (green), and B (blue) LED chips, by controlling the ratio of the major axis to the minor axis to approximately 2.5 or less, the assembly probability of assembling the second semiconductor light-emitting element and the third semiconductor light-emitting element into the second assembly hole and the third assembly hole, respectively, is improved.

[0238] ④ In addition, according to the embodiment, by increasing the area of ​​the irregularly shaped second semiconductor light-emitting element 350G and the elliptical third semiconductor light-emitting element 350B, the area of ​​the light-emitting region, i.e. the active layer, is increased, thereby achieving the effect of improving brightness.

[0239] <Second Embodiment>

[0240] then, Figure 9a This is a top view of the second display pixel assembly substrate structure 300A2 in this embodiment. Figure 9b It is Figure 9a The illustration shows an example of the overlapping assembly holes.

[0241] Reference Figure 9a The second assembly substrate structure 300A2 of the embodiment includes a first assembly hole 301a, a second assembly hole 301b and a third-second assembly hole 302c, taking into account the shape of the light-emitting element to be assembled.

[0242] The top view of the first assembly hole 301a can be circular, and the top view of the third-second assembly hole 302c can be elliptical. In this case, the top view of the second assembly hole 301b can be heterotypical.

[0243] For example, the upper and lower sides of the top view of the second assembly hole 301b may have a defined arc for half the length of its major axis. For example, the top view of the second assembly hole 301b may be a symmetrical shape that narrows in the middle. For example, the top view of the second assembly hole 301b may be a dumbbell shape that narrows in the middle, but is not limited to this.

[0244] Unlike the first assembly substrate structure 300A1, in the second assembly substrate structure 300A2, the elliptical third-second assembly hole 301c2 may have the same height (same major axis) as the irregular second assembly hole 301b, but is not limited thereto.

[0245] According to an embodiment, a second semiconductor light-emitting element package (not shown) may be included, which is assembled on the second display pixel assembly substrate structure 300A2.

[0246] For example, the second semiconductor light-emitting element package may include the first assembly hole 301a, a first semiconductor light-emitting element (not shown), a second semiconductor light-emitting element (not shown), and a third-second semiconductor light-emitting element (not shown), which are respectively assembled to the second assembly hole 301b and the third-second assembly hole 302c.

[0247] The shapes of the first semiconductor light-emitting element, the second semiconductor light-emitting element, and the third-second semiconductor light-emitting element can correspond to the shapes of the first assembly hole 301a, the second assembly hole 301b, and the third-second assembly hole 302c, respectively.

[0248] The following description focuses on the assembly substrate structure 300A2 for the second display pixel. Such features can also be applied to the second semiconductor light-emitting element package assembled on the above-mentioned assembly substrate structure 300A2 for the second display pixel.

[0249] Continue to refer to Figure 9a The first assembly hole 301a may have a first width a1 in the first direction and a first width b1 in the second direction.

[0250] Next, the second assembly hole 301b may have a second width a2 in the first direction and a second width b2 in the second direction, and the third-second assembly hole 302c may have a second width a2 in the first direction and a third width b3 in the second direction.

[0251] In the second display pixel assembly substrate structure 300A2, with the first circular assembly hole 301a as a reference, the increase in length in the long axis direction of the second assembly hole 301b and the third-second assembly hole 302c can be the same for each other.

[0252] For example, if the first assembly hole 301a has a circular cross-section with a first width a1 in the first direction and a first width b1 in the second direction of 25 μm and an exclusive interval of 7 μm, the second width a2 in the first direction of the second assembly hole 301b can be 32 μm, and the second width a2 in the first direction of the third-second assembly hole 302c can also be 32 μm, but it is not limited to this.

[0253] Conversely, in the second display pixel assembly substrate structure 300A2, based on the circular first assembly hole 301a, the reduction in the minor axis length of the second assembly hole 301b and the third-second assembly hole 302c can be staggered. For example, the reduction in the minor axis direction of the second assembly hole 301b can be greater than the reduction in the minor axis direction of the third-second assembly hole 302c. Therefore, the second width b2 in the minor axis direction of the second assembly hole 301b can be smaller than the third width b3 in the minor axis direction of the third-second assembly hole 302c.

[0254] For example, if the first assembly hole 301a has a circular cross-section with a first width a1 in the first direction and a first width b1 in the second direction of 25 μm and an exclusive interval of 7 μm, the third width b3 in the second direction of the third-second assembly hole 302c can be 18 μm, and the second width b2 in the second direction of the second assembly hole 301b can be 11 μm.

[0255] The technical effects of the second display pixel assembly substrate structure 300A2 of the embodiment will now be explained. Furthermore, such technical effects can also be applied to the second semiconductor light-emitting element package of the embodiment.

[0256] ① First, unlike internal technologies, even if the size of the LED chip is reduced to less than 30μm, the area difference between the circular first semiconductor light-emitting element, which serves as the reference chip, and the remaining second and third semiconductor light-emitting elements with different shapes can be controlled to a level with uniform dielectric efflux force (DEP force).

[0257] For example, the study found that when the size of the circular first semiconductor light-emitting element is set to 25 μm and the exclusivity interval is set to 7 μm, the areas of the heterotypical second semiconductor light-emitting element and the elliptical third-second semiconductor light-emitting element are approximately 110.45% and 92.16% of the area of ​​the circular first semiconductor light-emitting element, respectively, resulting in an area difference of about 10%.

[0258] In addition, the study found that when the size of the circular first semiconductor light-emitting element was set to 21 μm and the exclusivity interval was set to 7 μm, the areas of the irregular second semiconductor light-emitting element and the elliptical third-second semiconductor light-emitting element were approximately 104.8% and 88.9% of the area of ​​the circular first semiconductor light-emitting element, respectively, resulting in an area difference of about 10%.

[0259] Therefore, according to the embodiment, the second display pixel assembly substrate structure 300A2 and the second semiconductor light-emitting element package control the dielectric efflux force (DEP force) acting on each chip to an equal level during the simultaneous assembly of RGB chips, thereby achieving the technical effect of improving the assembly rate.

[0260] Additionally, as mentioned above Figure 6 As shown, when the tilt angle (Θ) in the assembly hole of the LED chip exceeds approximately 10°, the dielectric electrophoretic force (DEP force) decreases significantly, thus creating a dielectric electrophoretic force selectivity.

[0261] In the case of the second display pixel assembly substrate structure 300A2 and the second semiconductor light-emitting element package in the applicable embodiment, the tilt angle (Θ) of the semiconductor light-emitting element located at the misassembled position can be controlled to be about 10° or more. As a result, in the case of the embodiment, the light-emitting element chip located at the misassembled position is removed by magnetic force, thereby improving the probability of correct assembly and having the technical effect of solving the problem of the screen effect of LED chip blocking the assembly hole entrance.

[0262] ②In addition, in the case of the second semiconductor light-emitting element package in the applicable embodiment, by controlling the ratio of the major axis to the minor axis between the chips to an appropriate level, such as 2.5 or less, the problem of LED chips breaking in the LLO process can be solved.

[0263] For example, in the case of a 25μm circular chip, the ratio of the major axis to the minor axis of the elliptical third-second semiconductor light-emitting element is approximately 1.78, and in the case of a 21μm circular chip, the ratio is approximately 2.0. Thus, by controlling the ratio of the major axis to the minor axis to approximately 2.0 or less, the elliptical third-second semiconductor light-emitting element achieves the technical effect of not breaking during LLO processes and thus maintaining high reliability.

[0264] ③ Furthermore, by controlling the ratio of the major axis to the minor axis to approximately 2.0 or less, the assembly probability of assembling into the assembly hole is improved. According to the embodiment, even when the exclusivity is improved by further increasing the difference in the top view cross-sectional shape of each assembly hole among the R (red), G (green), and B (blue) LED chips, by controlling the ratio of the major axis to the minor axis to approximately 2.0 or less, the assembly probability of assembling the second semiconductor light-emitting element and the third-second semiconductor light-emitting element into their respective second assembly holes and third-second assembly holes is improved.

[0265] ④ In addition, according to the embodiment, by increasing the area of ​​the irregular second semiconductor light-emitting element and the elliptical third-second semiconductor light-emitting element, the area of ​​the light-emitting region, i.e. the active layer, is increased, thereby improving the brightness.

[0266] According to the embodiments, while having a micro-LED size that can be used in HD TVs, VR, AR, XR, etc., the exclusivity between R (red), G (green), and B (blue) LED chips is ensured, thereby achieving the technical effect of improving the assembly probability of R (red), G (green), and B (blue) LED chips that can emit light of R (red), G (green), and B (blue) colors.

[0267] Furthermore, according to the embodiments, it has the technical effect of improving the assembly probability while achieving uniform dielectrophoresis (DEP force) for LED chips of each color in a self-assembly method utilizing dielectrophoresis (DEP).

[0268] For example, ① unlike internal technology, even if the size of the LED chip is reduced to less than 30μm, the area difference between the circular first semiconductor light-emitting element 350R, which serves as the reference chip, and the remaining second semiconductor light-emitting elements 350G and third semiconductor light-emitting elements 350B, which have different shapes, can be controlled to about 10%.

[0269] Therefore, the display pixel assembly substrate structure and semiconductor light-emitting element package according to the embodiment control the dielectric efflux force (DEP force) acting on each chip at an equal level during the simultaneous assembly of RGB chips, thereby achieving the technical effect of improving the assembly rate.

[0270] Furthermore, in the case of the display pixel assembly substrate structure and the first semiconductor light-emitting element package in the applicable embodiment, the tilt angle (Θ) of the semiconductor light-emitting element located at the misassembled position can be controlled to be about 10° or more. As a result, in the case of the embodiment, the light-emitting element chip located at the misassembled position is removed by magnetic force, thereby improving the probability of correct assembly and having the technical effect of solving the problem of the screen effect of LED chip blocking the assembly hole entrance.

[0271] ②In addition, in the case of semiconductor light-emitting element packaging in the applicable embodiment, the ratio of the long axis to the short axis between the chips is controlled to an appropriate level, for example, 2.5 or less or 2.0 or less, thereby solving the problem of LED chip breakage in the LLO process.

[0272] ③ Furthermore, by controlling the ratio of the major axis to the minor axis to approximately 2.5 or less, the assembly probability of assembling into the assembly hole is improved. According to the embodiment, even when the exclusivity is improved by further increasing the difference in the top view cross-sectional shape of each assembly hole among the R (red), G (green), and B (blue) LED chips, by controlling the ratio of the major axis to the minor axis to approximately 2.5 or less, the assembly probability of assembling the second semiconductor light-emitting element and the third semiconductor light-emitting element into their respective second and third assembly holes is improved.

[0273] ④ In addition, according to the embodiment, as the area of ​​the irregularly shaped second semiconductor light-emitting element 350G and the elliptical third semiconductor light-emitting element 350B increases, the area of ​​the light-emitting region, i.e. the active layer, is increased, thereby improving the brightness.

[0274] The detailed description above is illustrative in all respects and should not be interpreted as limiting. The scope of the embodiments should be determined by a reasonable interpretation of the appended claims, and all modifications within the equivalent scope of the embodiments are included within the scope of the embodiments.

[0275] Industrial applications

[0276] The embodiments can be used in the field of displays for displaying images or information.

[0277] The embodiments can be used in the field of displays that use semiconductor light-emitting elements to display images or information.

[0278] The embodiments can be used in the field of displays that use micro- or nano-scale semiconductor light-emitting elements to display images or information.

Claims

1. An assembly substrate structure for display pixels, comprising: A circular first assembly hole is disposed in a first region of a defined assembly substrate; The second assembly hole is disposed in the second region of the aforementioned assembly substrate; and An elliptical third assembly hole is disposed in the third region of the aforementioned assembly substrate. The aforementioned first assembly hole, second assembly hole, and third assembly hole each include a width in a first direction and a width in a second direction perpendicular to the first direction. The increase in the width of the second and third assembly holes in the first direction is based on the width of the first assembly hole in the first direction and increases at predetermined exclusive intervals. The reduction in the width of the second assembly hole and the third assembly hole in the second direction is staggered with respect to the width of the first assembly hole in the second direction.

2. The assembly substrate structure for display pixels according to claim 1, wherein, The reduction in width of the second assembly hole in the second direction is greater than the reduction in width of the third assembly hole in the second direction.

3. The assembly substrate structure for display pixels according to claim 2, wherein, The width of the second assembly hole in the second direction is smaller than the width of the third assembly hole in the second direction.

4. The assembly substrate structure for display pixels according to claim 1, wherein, The second assembly hole described above includes arcs on its upper and lower sides in the top view section.

5. The assembly substrate structure for display pixels according to claim 4, wherein, The upper and lower sides of the top view of the second assembly hole include a defined arc based on half the width in the first direction.

6. The assembly substrate structure for display pixels according to claim 1, wherein, The top view of the aforementioned second assembly hole includes a symmetrical shape that narrows in the middle.

7. The assembly substrate structure for display pixels according to claim 1, wherein, The top view of the aforementioned second assembly hole (301b) includes a dumbbell shape that narrows in the middle.

8. A semiconductor light-emitting element package for display pixels, comprising: A circular first semiconductor light-emitting element is disposed in a first region of a defined assembly substrate; A second semiconductor light-emitting element is disposed in the second region of the aforementioned assembly substrate; and An elliptical third semiconductor light-emitting element is disposed in the third region of the aforementioned assembly substrate. The first semiconductor light-emitting element, the second semiconductor light-emitting element, and the third semiconductor light-emitting element each include a width in a first direction and a width in a second direction perpendicular to the first direction. The increase in the width of the second and third semiconductor light-emitting elements in the first direction is based on the width of the first semiconductor light-emitting element in the first direction and increases at predetermined exclusive intervals. The reduction in the width of the second semiconductor light-emitting element and the third semiconductor light-emitting element in the second direction is staggered with respect to the width of the first semiconductor light-emitting element in the second direction.

9. The semiconductor light-emitting element package for display pixels according to claim 8, wherein, The reduction in width of the second semiconductor light-emitting element in the second direction is greater than the reduction in width of the third semiconductor light-emitting element in the second direction.

10. The semiconductor light-emitting element package for display pixels according to claim 9, wherein, The width of the second semiconductor light-emitting element in the second direction is smaller than the width of the third semiconductor light-emitting element in the second direction.

11. The semiconductor light-emitting element package for display pixels according to claim 8, wherein, The second semiconductor light-emitting element described above includes arcs on its upper and lower sides in a top-view cross-section.

12. The semiconductor light-emitting element package for display pixels according to claim 11, wherein, The upper and lower sides of the top view of the aforementioned second semiconductor light-emitting element include a defined arc based on half the width in the aforementioned first direction.

13. The semiconductor light-emitting element package for display pixels according to claim 8, wherein, The top view of the aforementioned second semiconductor light-emitting element includes a symmetrical shape that narrows in the middle.

14. The semiconductor light-emitting element package for display pixels according to claim 8, wherein, The top view of the aforementioned second semiconductor light-emitting element (301b) includes a dumbbell shape that narrows in the middle.

15. A display device including semiconductor light-emitting elements, comprising an assembly substrate structure for display pixels according to claims 1 to 7.

16. A display device including a semiconductor light-emitting element, comprising a semiconductor light-emitting element package for display pixels as described in claims 8 to 14.

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