Fluorine-containing surfactant, etching solution and application
By using fluorinated surfactants to reduce the adsorption of surfactants on the filter element surface in the BOE etching solution, the problem of shortened service life of the etching solution was solved, and the stability and performance of the etching solution were improved.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-09-23
- Publication Date
- 2026-03-27
AI Technical Summary
The surfactants in the existing BOE etching solution are adsorbed on the filter element surface, which shortens the service life of the etching solution and affects the etching performance.
Fluorinated surfactants are used, which contain a large number of F atoms in their structure. These surfactants can form a repulsive force with the surface of the filter material, reducing the adsorption of surfactants on the filter surface and maintaining the stability of the etching solution components.
It extends the service life of the etching solution and improves its stability and etching performance.
Smart Images
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Abstract
Description
Technical Field
[0001] This application relates to the field of integrated circuit technology, and in particular to a fluorinated surfactant, an etching solution, and its application. Background Technology
[0002] As a key material in IC (integrated circuit) manufacturing processes, silicon oxide serves multiple functions, including protecting and isolating devices, passivating surfaces, acting as a dielectric, and serving as a doping barrier layer. During the manufacturing process, DHF (diluted HF) or BOE (buffered oxide etch) is commonly used for thinning or removing silicon oxide. BOE etch, in particular, is characterized by its high etching rate and stable etching performance.
[0003] In the process of silicon oxide thinning or removal using BOE etching solution, two key considerations must be taken: firstly, the etching rate must be considered to ensure production capacity; secondly, the etching uniformity of the etching solution must be taken into account. The etching rate of BOE etching solution can be adjusted by changing the content of HF and NH4F. Etching uniformity is typically achieved by adding surfactants to adjust the surface tension of the etching solution. Especially for scenarios requiring high etching uniformity, the surface tension stability of the BOE etching solution is crucial and must be compatible with the filter cartridges used in the production line. Therefore, it is necessary to select suitable surfactants to achieve refined etching with the BOE etching solution.
[0004] Currently, surfactants used in the market are classified into cationic surfactants, anionic surfactants, and amphoteric surfactants. When the surfactants in existing BOE etching solutions pass through a filter element, they interact with the filter element and some are adsorbed onto its surface. As the filtration rate increases, the surfactant accumulates on the filter element surface, gradually reducing the surfactant content in the solution. This shortens the lifespan of the BOE etching solution and consequently affects its etching performance.
[0005] Therefore, there is an urgent need to develop a surfactant that exhibits excellent stability in BOE etching solution, thereby extending the lifespan of BOE etching solution and improving its etching performance. Summary of the Invention
[0006] In view of this, one objective of this application is to provide a fluorinated surfactant that can form a repulsive force with the surface of filter material (PTFE, etc.) in water, thereby reducing the adsorption of surfactants in BOE and other etching solutions on the surface of filter material (PTFE, etc.), thus maintaining a relatively stable composition of BOE and other etching solutions and extending the service life of the line.
[0007] Another object of this application is to provide an etching solution.
[0008] Another objective of this application is to provide the application of etching solutions.
[0009] To achieve the above objectives, a first aspect of this application provides a fluorinated surfactant comprising a compound having the structure shown in Formula I:
[0010] R1-O-CF(R2)-CF(R3)-O-CF(R4)-R5 Formula I,
[0011] Wherein, R1, R2, R3, and R4 are each independently selected from one of the following: C1-4 hydrocarbon groups partially substituted with F, C1-4 hydrocarbon groups completely substituted with F, and F atoms, and the number of carbon atoms in R1, R2, and R4 is more than one; R5 is one of -SO3H, -COOH, -COONH4, and -SO3NH4.
[0012] The total number of F atoms in R1, R2, R3, and R4 is 'a', and the total number of carbon atoms in R1, R2, R3, and R4 is 'b'. The relationship between 'a' and 'b' is as follows:
[0013] a / (2*b+1)>0.8.
[0014] In some implementations, a and b satisfy the following relationship: 0.8 < a / (2*b+1) ≤ 1.3333.
[0015] In some embodiments, R1, R2, and R4 are each independently selected from one of F-partially substituted C1-4 alkyl groups and F-completely substituted C1-4 alkyl groups.
[0016] In some embodiments, R3 is selected from one of F-partially substituted C1-4 alkyl, F-completely substituted C1-4 alkyl, and F atoms.
[0017] In some embodiments, R1, R2, and R4 are each independently selected from one of structural formulas 1-4, R3 is selected from one of structural formulas 1-5, and R1, R2, R3, and R4 contain at most one structural formula 2 or structural formula 4.
[0018]
[0019] A second aspect of this application provides an etching solution comprising hydrogen fluoride, ammonium fluoride, a surfactant, and water, wherein the surfactant is the fluorinated surfactant described in this application.
[0020] In some embodiments, the compound having the structure shown in Formula I is present in an amount of 0.01-0.10% by mass in the etching solution.
[0021] In some embodiments, the hydrogen fluoride in the etching solution has a mass content of 0.1-10.0%.
[0022] In some embodiments, the ammonium fluoride in the etching solution has a mass content of 1.0-20.0%.
[0023] In some embodiments, the amount of ammonium ions in the etching solution is m mol, and the amount of the compound having the structure shown in Formula I is n mol, wherein m and n satisfy the following relationship:
[0024] 200≤m / n≤5000.
[0025] In some embodiments, the etching solution is a buffered oxide etching solution.
[0026] In some embodiments, the surface tension of the etching solution is 32-40 mN / m.
[0027] The third aspect of this application relates to the application of the etching solution described in this application in integrated circuit manufacturing.
[0028] The fluorinated surfactants described in this application can bring at least the following beneficial effects:
[0029] Because this fluorinated surfactant contains a large number of fluorine atoms in its structure and has low surface tension, it can form a repulsive force with the fluorine atoms on the surface of filter materials (such as PTFE) in water. This reduces the adsorption of surfactants in BOE and other etching solutions on the surface of filter materials (such as PTFE), thereby maintaining a relatively stable composition of BOE and other etching solutions and extending the service life of the line.
[0030] Additional aspects and advantages of this application will be set forth in part in the description which follows, and in part will be obvious from the description, or may be learned by practice of this application. Detailed Implementation
[0031] The embodiments of this application are described in detail below. These embodiments are exemplary and intended to explain this application, and should not be construed as limiting this application.
[0032] In this application, the disclosure of numerical ranges includes all values throughout the range and the disclosure of further subdivisions of the range, including the endpoints and subranges given for these ranges.
[0033] Unless otherwise specified, all raw materials and equipment involved in this application are self-made through commercial means or known methods; and all methods involved are conventional methods unless otherwise specified.
[0034] Fluorinated surfactants
[0035] The fluorinated surfactants in this application include compounds having the structure shown in Formula I:
[0036] R1-O-CF(R2)-CF(R3)-O-CF(R4)-R5 Formula I,
[0037] Among them, R1, R2, R3, and R4 are each independently selected from one of the following: C1-4 hydrocarbon groups partially substituted with F, C1-4 hydrocarbon groups completely substituted with F, and F atoms, and the number of carbon atoms in R1, R2, and R4 is more than one; R5 is one of -SO3H, -COOH, -COONH4, and -SO3NH4.
[0038] In some embodiments, the total number of F atoms in R1, R2, R3, and R4 is a, and the total number of carbon atoms in R1, R2, R3, and R4 is b, where a and b satisfy the following relationship:
[0039] a / (2*b+1)>0.8.
[0040] It should be noted that in the embodiments of this application, the above a / (2*b+1) can be understood as the F-conversion rate, a / (2*b+1)>0.8, that is, the F-conversion rate is greater than 80%.
[0041] As a preferred example, the above a and b satisfy the following relationship: 0.8 < a / (2*b+1) ≤ 1.3333.
[0042] In the embodiments of this application, an fluorination rate between 0.8 and 1.3333 allows for strong repulsion between the surfactant and the fluorine atoms in the filter element (e.g., PTFE), maintaining a relatively stable surface tension, achieving a stable etching effect, and extending service life. If the fluorination rate is below 0.8, the repulsion between the fluorine atoms of the surfactant and the filter element is insufficient to maintain a stable surface tension in the solution, thus failing to extend the service life. When the fluorination rate is greater than 1.3333, the surfactant is difficult to obtain, and its solubility in the BOE etching solution decreases, weakening its effect on reducing surface tension.
[0043] For example, the values of a / (2*b+1) mentioned above include, but are not limited to, 0.81, 0.83, 0.85, 0.87, 0.90, 0.93, 0.95, 0.98, 1, 1.1, 1.2 or 1.3, etc.
[0044] In the embodiments of this application, R1, R2, R3, and R4 all have fewer than 4 carbon atoms, which allows for better solubility in the BOE etching solution, thus demonstrating their surfactant properties. If R1, R2, R3, and R4 have more than 4 carbon atoms, their solubility in the BOE etching solution is low, they cannot completely dissolve, and therefore cannot achieve the effect of reducing surface tension, potentially even clogging the filter element. Furthermore, limiting the number of carbon atoms in R1, R2, and R4 to more than 1 ensures their surfactant properties; if R1, R2, R3, and R4 have more than 4 carbon atoms, their solubility is low, they cannot dissolve in the BOE etching solution, and therefore cannot achieve the effect of reducing surface tension.
[0045] For example, the C1-4 hydrocarbon groups in partially substituted F and completely substituted F include C1-4 alkyl, C2-4 alkenyl, C2-4 alkynyl, etc.
[0046] By way of non-limiting example, the above-mentioned C1-4 alkyl groups include, but are not limited to, one of methyl (-CH3), ethyl (-CH2CH3), n-propyl (-CH2CH2CH3), isopropyl (-CH(CH3)2), n-butyl (-CH2CH2CH2CH3), isobutyl (-CH(CH3)CH2CH3), sec-butyl (-CH2CH(CH3)2), tert-butyl (-C(CH3)3), etc.
[0047] By way of non-limiting example, the above-mentioned C2-4 alkenyl groups include, but are not limited to, one of vinyl (-HC=CH2), n-propenyl (-CH=CH-CH3), n-allyl (-CH2-CH=CH2), etc.
[0048] By way of non-limiting example, the above-mentioned C2-4 alkynyl groups include, but are not limited to, one of ethynyl (-C≡CH), propynyl (-CH2C≡CH), etc.
[0049] As an alternative example, R1, R2, and R4 are each independently selected from one of F-partially substituted C1-4 alkyl groups and F-completely substituted C1-4 alkyl groups, and / or R3 is selected from one of F-partially substituted C1-4 alkyl groups, F-completely substituted C1-4 alkyl groups, and F atoms.
[0050] In some embodiments, R1, R2, and R4 are each independently selected from one of structural formulas 1-4, and R3 is selected from one of structural formulas 1-5. Furthermore, R1, R2, R3, and R4 may contain at most one structural formula 2 or structural formula 4.
[0051]
[0052] It should be noted that, in the embodiments of this application, the fluorinated surfactants may include other fluorinated surfactants well known in the art, in addition to compounds having the structure shown in Formula I.
[0053] As an optional example, the fluorinated surfactant in this application embodiment is a compound having the structure shown in Formula I.
[0054] Those skilled in the art, knowing the structural formula of the compound shown in Formula I, can understand the preparation method of the above compound based on common knowledge in the field of chemical synthesis.
[0055] This type of F-containing surfactant uses alkane as a base and undergoes reaction processes such as oxidation, anionic polymerization, and hydrolysis. During these processes, process parameters such as reaction temperature and reaction time are controlled to obtain the final F-containing surfactant.
[0056] The fluorinated surfactants in this application contain a large number of F atoms in their structure and have low surface tension. Therefore, they can form a repulsive force with the F atoms on the surface of the filter material (PTFE, etc.) in water, thereby reducing the adsorption of surfactants in BOE and other etching solutions on the surface of the filter material (PTFE, etc.), thus maintaining a relatively stable composition of BOE and other etching solutions and extending the service life of the line.
[0057] <Etching Solution>
[0058] The etching solution in this application embodiment includes hydrogen fluoride, ammonium fluoride, surfactant and water, wherein the surfactant is a fluorinated surfactant in this application embodiment.
[0059] As an optional example, the etching solution in this application embodiment is composed of hydrogen fluoride, ammonium fluoride, surfactant and water.
[0060] In some embodiments, the mass content of the compound having the structure shown in Formula I in the etching solution is 0.01-0.10%. In the etching solution of this application embodiment, when the mass content of the compound having the structure shown in Formula I in the etching solution is within the above range, a stable surface tension in the solution can be achieved, thereby achieving a longer service life; if it is less than 0.01%, the surface tension in the solution is high, and the uniformity of etching cannot be achieved; if it is greater than 0.10%, there may be a risk of precipitation due to solubility issues.
[0061] For example, the mass content of compounds having the structure shown in Formula I in the etching solution includes, but is not limited to, 0.01%, 0.02%, 0.03%, 0.04%, 0.05%, 0.06%, 0.07%, 0.08%, 0.09%, or 0.10%.
[0062] In some embodiments, the mass content of hydrogen fluoride in the etching solution is 0.1-10.0%, including but not limited to 0.1%, 1%, 2%, 3%, 4%, 5%, 6%, 7%, 8%, 9% or 10%.
[0063] In some embodiments, the mass content of ammonium fluoride in the etching solution is 1.0-20.0%, including but not limited to 1.0%, 1.5%, 2.0%, 2.5%, 3%, 3.5%, 4%, 4.5%, 5%, 5.5%, 6%, 8%, 10%, 12.5%, 15%, 17.5% or 20.0%.
[0064] In some embodiments, the amount of ammonium ions in the etching solution is m mol, and the amount of the compound having the structure shown in Formula I is n mol, where m and n satisfy the following relationship:
[0065] 200≤m / n≤5000.
[0066] In the embodiments of this application, if m / n < 200, the F-containing surfactant in the etching solution is not easily ionized, and its ability to effectively reduce the surface tension of the solution is reduced. If m / n > 5000, it may lead to NH4+ ionization. + Excessive ion concentration can affect the etching rate. On the other hand, it may lead to a lower content of compounds with the structure shown in Formula I, making it difficult to maintain a stable etching solution composition, which may result in problems such as a decrease in etching rate and etching stability.
[0067] For example, the values of m / n include, but are not limited to, 200, 500, 600, 700, 800, 900, 1000, 1100, 1200, 1300, 1400, 1500, 1600, 1700, 1800, 1900, 2000, 2100, 2200, 2300, 2400, 2500, 2600, 2700, 2800, 2900, 3000, or 5000.
[0068] In some embodiments, the etchant is a buffered oxide etchant (i.e., BOE etchant).
[0069] In some embodiments, the surface tension of the etching solution is 32-40 mN / m, including but not limited to 32 mN / m, 33 mN / m, 34 mN / m, 35 mN / m, 36 mN / m, 37 mN / m or 40 mN / m.
[0070] In the embodiments of this application, generally, as the surfactant content increases, the surface tension of the solution gradually decreases until the critical micelle concentration of the surfactant is reached.
[0071] The preparation method of the etching solution in the embodiments of this application is not limited, and can be any etching solution preparation method well known in the art.
[0072] For example, the method for preparing the etching solution in this application embodiment is as follows: hydrofluoric acid, ammonium fluoride, a compound having the structure shown in Formula I, and water are added sequentially according to the formula ratio.
[0073] In the etching solution of this application embodiment, the fluorinated surfactant can form a repulsive force with the surface of the filter material (PTFE, etc.) in water, reducing the adsorption of surfactant in the etching solution on the surface of the filter material (PTFE, etc.), thereby maintaining a more stable etching solution composition, improving the stability of the etching solution, and extending the service life of the etching solution on the line.
[0074] <Application of Etching Solution>
[0075] The etching solution of this application embodiment can be widely used in integrated circuit production, especially for etching silicon oxide layers in integrated circuit manufacturing processes.
[0076] For example, in the silicon oxide layer etching process, the wafer is etched with etching solution at 22-24°C. The etching time can be adjusted according to the thickness of the silicon oxide layer, etc., generally 1-2 minutes. After etching, necessary cleaning and drying are performed.
[0077] The following non-limiting embodiments further illustrate certain features of the present technology.
[0078] I. Examples and Comparative Examples
[0079] The structural formulas of R1, R2, R3, and R4 in the compounds having the structure shown in Formula I involved in each embodiment and comparative example are listed below:
[0080]
[0081] Example 1
[0082] (Fluoro-containing surfactants)
[0083] The fluorinated surfactant in this embodiment is a compound having the structure shown in Formula I:
[0084] R1-O-CF(R2)-CF(R3)-O-CF(R4)-R5 Formula I,
[0085] Wherein, R1 is structural formula 1 (abbreviated as formula 1), R2 is structural formula 3 (abbreviated as formula 3), R3 is structural formula 5 (abbreviated as formula 5), R4 is structural formula 3 (abbreviated as formula 3), and R5 is -COONH4; the total number of F atoms in R1, R2, R3, and R4 is a, and the total number of carbon atoms in R1, R2, R3, and R4 is b, a = 12, b = 4, and a / (2*b+1) (i.e., the F conversion rate) is 1.3333.
[0086] (etching solution)
[0087] The etching solution in this embodiment consists of the following components by mass percentage: 0.45% hydrogen fluoride, 2.20% ammonium fluoride, 0.024% surfactant, and the balance being water. The surfactant is a fluorinated surfactant as described in this application embodiment, and the amount of ammonium ions in the etching solution is m mol, the amount of the compound having the structure shown in Formula I is n mol, m = 0.059 mol, n = 6.0 * 10^-5 mol, and m / n = 993.
[0088] The etching solution in this embodiment is prepared by adding hydrofluoric acid, ammonium fluoride, a compound having the structure shown in Formula I, and water in sequence according to the formula ratio.
[0089] Examples 2-35 and Comparative Examples 1-7 are basically the same as Example 1, except that some substances are selected and parameter values are different, as shown in Table 1.
[0090] Table 1. Material selection and parameter values for each embodiment and comparative example.
[0091]
[0092]
[0093]
[0094] II. Performance Testing
[0095] The etching solutions of each embodiment and comparative example were used to etch integrated circuits with a thickness of [missing information]. The silicon oxide layer was then used. In the silicon oxide layer etching process, the wafer was etched at 23°C with an etching solution for 1.5 minutes. After etching, necessary cleaning and drying were performed. The performance of the etching solution was evaluated based on surface tension, substrate roughness, and etching residue. Specifically:
[0096] The surface tension of the etching solution was measured using a surface tension meter, specifically the ring method.
[0097] The roughness of the etched substrate was characterized by atomic force microscopy (AFM).
[0098] The residue after etching was tested using a scanning electron microscope.
[0099] The performance test results of the etching solutions in each embodiment and comparative example are shown in Table 2.
[0100] Table 2. Performance test results of the etching solutions in each embodiment and comparative example.
[0101]
[0102]
[0103] As can be seen from Table 2, the etching solutions of each embodiment of this application have lower surface tension and smaller substrate roughness compared with the etching solutions of each comparative example, and there is no residue in the silicon oxide etching.
[0104] Specifically:
[0105] Comparing Example 1 and Comparative Examples 1-4, it can be seen that when the Fiberization rate is less than the 0.8% specified in this application, both surface tension and substrate roughness increase, especially the increase in substrate roughness, and silicon oxide etching residue appears. Furthermore, when the Fiberization rate is less than the 0.8% specified in this application, even increasing the content of the compound having the structure shown in Formula I (i.e., the surfactant) does not significantly improve the aforementioned properties.
[0106] As can be seen from Comparative Examples 1 and 5-7, when the number of carbon atoms in compounds R1, R2, and R4 with the structure shown in Formula I of this application is less than 1, even if the Fiberization rate is greater than 0.8, the surface tension and substrate roughness will increase significantly, and silicon oxide etching residue will appear. This may be because the number of carbon atoms in the surfactant molecules is small, which cannot play the role of the surfactant and thus cannot effectively reduce the surface tension.
[0107] Comparing Examples 1, 4-5 and Examples 3, 6-19, it can be seen that under the premise that the mass content of each component of the etching solution remains unchanged and R5 in the compound with the structure shown in Formula I remains unchanged (both are -COONH4, -SO3H or -SO3NH4), the surface tension and substrate roughness of the etching solution do not change much. This may be because the factors affecting the surface tension and effect of the etching solution are the Fiberization rate and content, which have no obvious relationship with R1...R4.
[0108] Comparing Examples 1-2 and Examples 27, 3, 28-29, when the selection of each component of the etching solution is consistent and the content of hydrofluoric acid and ammonium fluoride remains unchanged, the surface tension and substrate roughness both decrease with the increase of surfactant content. This may be because: with the increase of surfactant content, the surface tension of the etching solution decreases, and the etching solution has better wettability to the etching material such as silicon oxide, which can be etched more uniformly, resulting in a decrease in roughness.
[0109] Comparing Example 30 and Example 1, it can be seen that when the selection of each component of the etching solution is consistent, and the contents of hydrofluoric acid, ammonium fluoride, and surfactant are unchanged, the surface tension of R5 in the surfactant compound with the structure shown in Formula I is lower than that of -COONH4. This may be because the H in -COOH can better form hydrogen bonds with H2O in the etching solution, which can better reduce the surface tension of the etching solution.
[0110] Comparing Example 31 with Examples 3 and 6-11, it can be seen that when the selection of each component of the etching solution is consistent, and the contents of hydrofluoric acid, ammonium fluoride, and surfactant remain unchanged, the fluorination rate of the surfactant compound with the structure shown in Formula I exceeds the preferred upper limit of fluorination rate of 1.3333 in this application. The surface tension and substrate roughness of the etching solution are reduced. This may be because the fluorination rate increases, the solubility of the surfactant in the etching solution decreases, which in turn leads to a decrease in its surface tension and substrate roughness in the etching solution.
[0111] Comparing Examples 3, 29, and 32-35, it can be seen that, under the premise that the components of the etching solution are selected consistently and the hydrofluoric acid content remains unchanged, the surface tension and substrate roughness of the etching solution are lower when the value of m / n is within the preferred range of 200-5000 in this application. This may be because when the value of m / n is less than 200, the F-containing surfactant in the etching solution is not easily ionized, thus weakening its ability to reduce the surface tension of the solution. Conversely, when the value of m / n is greater than 5000, NH4+... + Excessive ion concentration affects the etching rate.
[0112] In this application, the terms "one embodiment," "some embodiments," "example," "specific example," or "some examples," etc., refer to a specific feature, structure, material, or characteristic described in connection with that embodiment or example, which is included in at least one embodiment or example of this application. In this specification, the illustrative expressions of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in one or more embodiments or examples. Moreover, without contradiction, those skilled in the art can combine and integrate the different embodiments or examples described in this specification, as well as the features of different embodiments or examples.
[0113] Although embodiments of this application have been shown and described above, it is understood that the above embodiments are exemplary and should not be construed as limiting this application. Those skilled in the art can make changes, modifications, substitutions and variations to the above embodiments within the scope of this application.
Claims
1. A fluorinated surfactant, characterized in that, The fluorinated surfactant includes compounds having the structure shown in Formula I: R1-O-CF(R2)-CF(R3)-O-CF(R4)-R5 Formula I, Wherein, R1, R2, R3, and R4 are each independently selected from one of the following: C1-4 hydrocarbon groups partially substituted with F, C1-4 hydrocarbon groups completely substituted with F, and F atoms, and the number of carbon atoms in R1, R2, and R4 is more than one; R5 is one of -SO3H, -COOH, -COONH4, and -SO3NH4. The total number of F atoms in R1, R2, R3, and R4 is 'a', and the total number of carbon atoms in R1, R2, R3, and R4 is 'b'. The relationship between 'a' and 'b' is as follows: a / (2*b+1)>0.
8.
2. The fluorinated surfactant according to claim 1, characterized in that, R1, R2, and R4 are each independently selected from one of F-partially substituted C1-4 alkyl groups and F-completely substituted C1-4 alkyl groups; and / or, The R3 is selected from one of the following: partially substituted F C1-4 alkyl, completely substituted F C1-4 alkyl, and F atoms; and / or, The relationship between a and b is as follows: 0.8 < a / (2*b+1) ≤ 1.3333.
3. The fluorinated surfactant according to claim 2, characterized in that, R1, R2, and R4 are each independently selected from one of structural formulas 1-4, R3 is selected from one of structural formulas 1-5, and R1, R2, R3, and R4 contain at most one structural formula 2 or structural formula 4.
4. An etching solution, characterized in that, It includes hydrogen fluoride, ammonium fluoride, a surfactant, and water, wherein the surfactant is a fluorinated surfactant as described in any one of claims 1 to 3.
5. The etching solution according to claim 4, characterized in that, The compound having the structure shown in Formula I has a mass content of 0.01-0.10% in the etching solution.
6. The etching solution according to claim 4, characterized in that, The hydrogen fluoride in the etching solution has a mass content of 0.1-10.0%.
7. The etching solution according to claim 4, characterized in that, The ammonium fluoride in the etching solution has a mass content of 1.0-20.0%.
8. The etching solution according to claim 4, characterized in that, The amount of ammonium ions in the etching solution is mmol, the amount of the compound having the structure shown in Formula I is nmol, and the relationship between m and n is as follows: 200≤m / n≤5000.
9. The etching solution according to any one of claims 4 to 8, characterized in that, The etching solution is a buffered oxide etching solution; and / or, The surface tension of the etching solution is 32-40 mN / m.
10. The application of the etching solution as described in any one of claims 4 to 9 in integrated circuit manufacturing.