Display device, method of manufacturing the same, and electronic device including the same

Abstract

A display apparatus, a method of manufacturing the same, and an electronic device including the same are provided. The display device includes: a substrate; a display element layer disposed on the substrate and including a plurality of display elements; and an encapsulation layer disposed on the display element layer and including a first inorganic encapsulation layer, an organic encapsulation layer disposed on the first inorganic encapsulation layer, and a pattern layer disposed between the first inorganic encapsulation layer and the organic encapsulation layer, the pattern layer includes a plurality of protruding pattern portions disposed on an upper surface of the pattern layer and protruding toward the organic encapsulation layer.

Description

[0001] This application claims priority and benefit to Korean Patent Application No. 10-2024-0129422, filed on September 24, 2024, with the Korean Intellectual Property Office, the entire contents of which are incorporated herein by reference. Technical Field

[0002] One or more embodiments of this disclosure relate to the structure of a display device, a method of manufacturing the display device, and an electronic device including the display device. Background Technology

[0003] With the rapid development of the display field for visually representing various electrical signals, a variety of suitable display devices with excellent characteristics such as thinness, light weight and low power consumption have been introduced.

[0004] Display devices may include liquid crystal display devices that do not emit light themselves and use light from a backlight, or light-emitting display devices that include display elements capable of emitting light. Light-emitting display devices may include display elements comprising an emitting layer. Summary of the Invention

[0005] One or more embodiments of this disclosure include a robust display device. The embodiments set forth herein are examples, and the scope of the disclosure is not limited thereto.

[0006] Additional aspects of the embodiments will be set forth in part in the description which follows, and in part will be apparent from the description, or may be learned by practice of the disclosed embodiments.

[0007] According to one or more embodiments, a display device includes: a substrate; a display element layer on the substrate, including a plurality of display elements; and an encapsulation layer on the display element layer, including a first inorganic encapsulation layer, an organic encapsulation layer on the first inorganic encapsulation layer, and a patterning layer between the first inorganic encapsulation layer and the organic encapsulation layer, wherein the patterning layer includes a plurality of protruding pattern portions on the upper surface of the patterning layer and protruding toward the organic encapsulation layer.

[0008] Each of the multiple protruding pattern portions can be located between adjacent display elements among multiple display elements.

[0009] The pattern layer may also include recessed portions corresponding to multiple display elements, wherein the protruding pattern portions and the recessed portions may be repeatedly disposed on the upper surface of the pattern layer.

[0010] Each of the multiple protruding pattern portions can have a rectangular shape in the sectional view.

[0011] Each of the multiple protruding pattern portions can have a trapezoidal shape in the sectional view.

[0012] Each of the multiple protruding pattern portions may have a cross-section with its width decreasing from the upper region to the lower region.

[0013] The materials constituting the patterned layer may include silane coupling agents.

[0014] Based on the total weight of the patterned layer, the patterned layer may include an amount of silane coupling agent of about 0.5 wt% to about 6 wt%.

[0015] The silane coupling agent may include a first end and a second end, the first end may include an alkoxysilyl group, and the second end may include an acryloyloxy group or a methacryloyloxy group.

[0016] The encapsulation layer may also include a second inorganic encapsulation layer on top of the organic encapsulation layer.

[0017] The display device may also include: a color conversion-transmission layer on the encapsulation layer and configured to convert light emitted from multiple display elements into light of different colors; and a color filter layer on the color conversion-transmission layer.

[0018] According to one or more embodiments, a display device includes: a substrate; a display element layer on the substrate, including a plurality of display elements; and an encapsulation layer on the display element layer, including a first inorganic encapsulation layer, an organic encapsulation layer on the first inorganic encapsulation layer, and a patterning layer between the first inorganic encapsulation layer and the organic encapsulation layer, wherein the material constituting the patterning layer includes a silane coupling agent.

[0019] Based on the total weight of the patterned layer, the patterned layer may include an amount of silane coupling agent of about 0.5 wt% to about 6 wt%.

[0020] The silane coupling agent may include a first end and a second end, the first end may include an alkoxysilyl group, and the second end may include an acryloyloxy group or a methacryloyloxy group.

[0021] The pattern layer may include multiple protruding pattern portions on the upper surface of the pattern layer and protruding toward the organic encapsulation layer.

[0022] Each of the multiple protruding pattern portions can be located between adjacent display elements among multiple display elements.

[0023] Each of the multiple protruding pattern portions can have a rectangular shape in the sectional view.

[0024] Each of the multiple protruding pattern portions can have a trapezoidal shape in the sectional view.

[0025] The display device may also include: a color conversion-transmission layer on the encapsulation layer and configured to convert light emitted from multiple display elements into light of different colors; and a color filter layer on the color conversion-transmission layer.

[0026] According to one or more embodiments, a method of manufacturing a display device includes: forming a display element layer comprising a plurality of display elements on a substrate; forming a first inorganic encapsulation layer on the display element layer; forming a pattern layer on the first inorganic encapsulation layer; and forming an organic encapsulation layer on the pattern layer, wherein the pattern layer includes a plurality of protruding pattern portions on an upper surface of the pattern layer and protruding toward the organic encapsulation layer.

[0027] The steps of forming a patterned layer may include: forming a patterned layer constituent material by blending a silane coupling agent with a matrix resin to uniformly (e.g., substantially uniformly) disperse the silane coupling agent in the matrix resin; and applying the patterned layer constituent material onto a first inorganic encapsulation layer.

[0028] The steps of forming the pattern layer may also include: performing a printing process on the applied pattern layer constituent materials to form multiple prominent pattern portions.

[0029] The method may further include performing an ultraviolet (UV) curing process after forming the organic encapsulation layer.

[0030] The method may further include performing a heat treatment process after performing a UV curing process.

[0031] The heat treatment process can be performed at a temperature of approximately 80°C to approximately 90°C.

[0032] The method may further include: forming a second inorganic encapsulation layer on the organic encapsulation layer.

[0033] The method may further include: forming a color conversion-transmission layer on a second inorganic encapsulation layer, the color conversion-transmission layer converting light emitted from multiple display elements into light of different colors; and forming a color filter layer on the color conversion-transmission layer. Attached Figure Description

[0034] The above and other aspects and features of some disclosed embodiments will become clearer from the following description taken in conjunction with the accompanying drawings, in which: Figure 1 This is a schematic perspective view of a display device according to an embodiment; Figure 2 This is a schematic cross-sectional view of a display device according to an embodiment; Figure 3 yes Figure 2 A schematic cross-sectional view of the optical layer of the color conversion-transmission layer in the image; Figure 4 This is an equivalent circuit diagram of pixels disposed in a display device according to an embodiment; Figure 5 This is a schematic cross-sectional view of a display device according to an embodiment; Figure 6 This is a schematic plan view of a display device according to an embodiment; Figure 7 This is a schematic cross-sectional view of the encapsulation layer of a display device according to an embodiment; Figure 8 This is a schematic cross-sectional view of a display device according to another embodiment; Figure 9 This is a schematic cross-sectional view of the encapsulation layer of a display device according to another embodiment; Figure 10 and Figure 11 This is a flowchart illustrating a method for manufacturing a display device according to an embodiment; Figure 12 This is a block diagram of an electronic device according to an embodiment; and Figure 13 These are schematic diagrams of electronic devices according to various embodiments. Detailed Implementation

[0035] Referring now to embodiments in more detail, examples of which are shown in the accompanying drawings, wherein the same reference numerals always denote the same elements. In this regard, embodiments may take different forms and should not be construed as limited to the description set forth herein. Therefore, embodiments are described below only by reference to the accompanying drawings to explain aspects of the embodiments described herein. As used herein, the term “and / or” includes any and all combinations of one or more of the associated listed items. Throughout this disclosure, the expression “at least one of a, b, and c” indicates only a, only b, only c, both a and b, both a and c, both b and c, all of a, b, and c, or variations thereof.

[0036] The disclosure allows for various suitable modifications and can have numerous embodiments, some of which are shown in the accompanying drawings and further described in the detailed description. Refer to the following and accompanying drawings. Figure 1 The effects and features disclosed, as well as methods for implementing them, will become clear from the embodiments described in more detail herein. However, the disclosure is not limited to the embodiments described herein and can be implemented in various suitable forms.

[0037] In the following description, embodiments will be described in more detail with reference to the accompanying drawings, and when describing with reference to the drawings, the same or corresponding components will be given the same reference numerals, and repeated descriptions will be omitted.

[0038] In the following embodiments, the terms first, second, etc. are not intended to be limiting, but are used to distinguish one component from another.

[0039] In the following embodiments, unless the context clearly indicates otherwise, singular expressions include plural expressions.

[0040] In the following embodiments, terms including or having are intended to imply the presence of the stated features or components, and do not exclude the possibility of adding one or more other features or components.

[0041] In the following embodiments, when a portion of a membrane, region, component, etc. is above or on top of another portion, this includes not only when it is directly on top of the other portion, but also when other membranes, regions, components, etc. are disposed between them.

[0042] In the accompanying drawings, the dimensions of components may be enlarged or reduced for ease of illustration. For example, for illustrative purposes, the dimensions and thickness of each structure shown in the drawings may be arbitrary, and the disclosure is not limited to the dimensions and thicknesses shown.

[0043] In some embodiments, a particular process sequence may be performed in a different order than that described. For example, two processes described consecutively may be performed substantially synchronously (e.g., simultaneously), or they may be performed in the reverse order of that described.

[0044] In the following embodiments, when layers, regions, or components are connected to each other, they can be directly connected, or another layer, region, or component can be placed between them, thus allowing them to be indirectly connected. For example, in the following embodiments, when layers, regions, or components are electrically connected to each other, they can be directly electrically connected, or another layer, region, or component can be placed between them, thus allowing them to be indirectly electrically connected.

[0045] In the following embodiments, the terms x-axis, y-axis, and z-axis are not limited to the three axes in a Cartesian coordinate system, but can be interpreted broadly to include the three axes in a Cartesian coordinate system. For example, the x-axis, y-axis, and z-axis can be orthogonal to each other; however, they can also refer to different directions that are not orthogonal to each other.

[0046] Figure 1 This is a schematic perspective view of the display device 1 according to an embodiment.

[0047] Reference Figure 1The display device 1 may include a display area DA for displaying an image and a non-display area NDA for not displaying an image. The display device 1 can provide an image by means of an array of multiple sub-pixels arranged two-dimensionally in the xy plane within the display area DA. Each of the sub-pixels can emit light of a different color and can be, for example, one of a red sub-pixel, a green sub-pixel, and a blue sub-pixel.

[0048] In an embodiment, the plurality of sub-pixels may include a first sub-pixel PX1, a second sub-pixel PX2, and a third sub-pixel PX3. For ease of description, the following will describe the case where the first sub-pixel PX1 is a red sub-pixel, the second sub-pixel PX2 is a green sub-pixel, and the third sub-pixel PX3 is a blue sub-pixel.

[0049] The first sub-pixel PX1, the second sub-pixel PX2, and the third sub-pixel PX3 are each capable of emitting red light Lr (see...). Figure 2 ), Green Light LG (see) Figure 2 ) and blue light Lb (see Figure 2 The display device 1 can provide an image by using light emitted from the first sub-pixel PX1, the second sub-pixel PX2, and the third sub-pixel PX3.

[0050] The non-display area NDA is the area that does not provide an image and may completely surround the display area DA. Drivers or main voltage lines configured to provide electrical signals or power to the pixel circuitry may be located in the non-display area NDA. The non-display area NDA may include pads (also known as solder pads), which are areas where electronic devices and / or printed circuit boards can be electrically connected.

[0051] The display area DA can have features such as Figure 1 The quadrilateral polygon shape shown is an example. For instance, the display area DA can have a rectangular shape where the horizontal length is greater than the vertical length, a rectangular shape where the horizontal length is less than the vertical length, or a square shape. In other embodiments, the display area DA can be circular, elliptical, or a polygon such as a triangle or pentagon. In embodiments, although... Figure 1 The display device 1 is shown as a flat panel display device, but the display device 1 can be implemented in various suitable forms, such as flexible, foldable and / or rollable display devices.

[0052] In one embodiment, display device 1 may be an organic light-emitting display device. In another embodiment, display device 1 may be an inorganic light-emitting display device and / or a quantum dot light-emitting display device. For example, the emitting layer of the display element included in display device 1 may include organic materials, inorganic materials, quantum dots, organic materials and quantum dots, inorganic materials and quantum dots, or organic materials, inorganic materials and quantum dots. Hereinafter, for ease of description, the case where display device 1 is an organic light-emitting display device will be described in more detail.

[0053] Display device 1 may be an electronic device including a display panel. The electronic device may be a vehicle display device including an instrument panel, a center information display (CID) and / or a passenger display, a wearable electronic device that can be worn on a part of a user's body, a medical electronic device, a robot, an electronic device for advertising and / or display, and / or an educational electronic device.

[0054] Figure 2 This is a schematic cross-sectional view of the display device 1 according to an embodiment.

[0055] Reference Figure 2 The display device 1 may include a circuit layer PCL on the substrate 100. The circuit layer PCL may include a first sub-pixel circuit PC1, a second sub-pixel circuit PC2, and a third sub-pixel circuit PC3, and each of the first sub-pixel circuit PC1, the second sub-pixel circuit PC2, and the third sub-pixel circuit PC3 may include a thin-film transistor and / or a capacitor. The display element layer DEL may include a first light-emitting diode LED1, a second light-emitting diode LED2, and a third light-emitting diode LED3 as display elements. The first sub-pixel circuit PC1, the second sub-pixel circuit PC2, and the third sub-pixel circuit PC3 may be electrically connected to the first light-emitting diode LED1, the second light-emitting diode LED2, and the third light-emitting diode LED3 of the display element layer DEL, respectively.

[0056] Each of the first light-emitting diode LED1, the second light-emitting diode LED2, and the third light-emitting diode LED3 may be an organic light-emitting diode comprising organic materials. In another embodiment, each of the first light-emitting diode LED1, the second light-emitting diode LED2, and the third light-emitting diode LED3 may be an inorganic light-emitting diode comprising inorganic materials. The inorganic light-emitting diode may include a PN junction diode, which comprises inorganic semiconductor materials. When a voltage is applied to the PN junction diode in the forward direction, holes and electrons can be injected, and the energy generated by the recombination of holes and electrons can be converted into light energy to emit light of a predetermined color. The aforementioned inorganic light-emitting diode may have a width of several micrometers to hundreds of micrometers or several nanometers to hundreds of nanometers. In some embodiments, each of the first light-emitting diode LED1, the second light-emitting diode LED2, and the third light-emitting diode LED3 may be a light-emitting diode comprising quantum dots. As described above, the emitting layer of each of the first light-emitting diode LED1, the second light-emitting diode LED2, and the third light-emitting diode LED3 may comprise organic materials, inorganic materials, quantum dots, organic materials and quantum dots, or inorganic materials and quantum dots.

[0057] The first light-emitting diode (LED1), the second light-emitting diode (LED2), and the third light-emitting diode (LED3) can emit light of the same color. For example, the first light-emitting diode (LED1), the second light-emitting diode (LED2), and the third light-emitting diode (LED3) can emit blue light (Lb). However, the disclosure is not limited thereto. In another embodiment, the first light-emitting diode (LED1), the second light-emitting diode (LED2), and the third light-emitting diode (LED3) can emit light of different colors. For example, light emitted from the first light-emitting diode (LED1), the second light-emitting diode (LED2), and the third light-emitting diode (LED3) (e.g., blue light (Lb)) can pass through the encapsulation layer TFE1 on the display element layer DEL and through the color conversion-transmission layer FNL.

[0058] The color conversion-transmission layer FNL may include an optical layer that transmits light (e.g., blue light Lb) emitted from the display element layer DEL with or without color conversion. For example, the color conversion-transmission layer FNL may include a color conversion portion that converts light (e.g., blue light Lb) emitted from the display element layer DEL into another color, and a transmission portion that transmits light (e.g., blue light Lb) emitted from the display element layer DEL without color conversion. The color conversion-transmission layer FNL may include a first color conversion portion 510 corresponding to a first sub-pixel PX1, a second color conversion portion 520 corresponding to a second sub-pixel PX2, and a transmission portion 530 corresponding to a third sub-pixel PX3. The first color conversion portion 510 can convert blue light Lb into red light Lr, and the second color conversion portion 520 can convert blue light Lb into green light Lg. The transmission portion 530 can allow blue light Lb to pass through without conversion.

[0059] A color filter layer CFL can be disposed on the color conversion-transmission layer FNL. An upper encapsulation layer TFE2 can be placed between the color conversion-transmission layer FNL and the color filter layer CFL. The color filter layer CFL may include a first color filter 810, a second color filter 820, and a third color filter 830 with different colors. In an embodiment, the first color filter 810 may be a red color filter, the second color filter 820 may be a green color filter, and the third color filter 830 may be a blue color filter.

[0060] The light that has undergone color conversion through the color conversion-transmission layer FNL and the light transmitted through the color conversion-transmission layer FNL can pass through the first color filter 810, the second color filter 820, and the third color filter 830 respectively, thereby improving color purity. In addition, the color filter layer CFL can prevent or reduce the reflection of external light (e.g., light incident on the display device 1 from the outside of the display device 1) that would otherwise be perceived by the user.

[0061] The outer coating 900 may be disposed on the color filter layer CFL. The outer coating 900 may include an organic material. For example, the outer coating 900 may include a light-transmitting organic material, such as acrylic resin.

[0062] In some embodiments, after the color conversion-transmission layer FNL, the upper encapsulation layer TFE2, and the color filter layer CFL are sequentially formed on the encapsulation layer TFE1, the outer coating 900 can be applied and cured directly on the color filter layer CFL. In some embodiments, another optical film (such as an anti-reflective (AR) film) can be provided on the outer coating 900. In some embodiments, a window can be further provided on the outer coating 900.

[0063] The display device 1 having the above structure may include electronic devices capable of displaying moving images and / or still images, such as televisions, billboards, cinema screens, monitors, tablet PCs, or laptop computers.

[0064] Figure 3 It shows Figure 2 Color conversion - optical layer of the transmission layer FNL.

[0065] Reference Figure 3 The first color conversion section 510 can convert the incident blue light Lb into red light Lr. For example... Figure 3 As shown, the first color conversion section 510 may include a first photosensitive polymer BR1 and a first quantum dot QD1 and a first scattering particle SC1 dispersed in the first photosensitive polymer BR1.

[0066] The first quantum dot QD1 can be excited by blue light Lb to isotropically emit red light Lr with a wavelength longer than that of blue light Lb. The first photosensitive polymer BR1 can be a transparent organic material.

[0067] The first scattering particle SC1 can scatter blue light Lb that is not absorbed by the first quantum dot QD1, thereby exciting more first quantum dots QD1 and improving color conversion efficiency. The first scattering particle SC1 can be, for example, titanium oxide (TiO2) and / or metal particles. The first quantum dot QD1 can be selected from group II-VI compounds, group III-V compounds, group IV-VI compounds, group IV elements, group IV compounds and combinations thereof.

[0068] The second color conversion section 520 can convert the incident blue light Lb into green light Lg. For example... Figure 3 As shown, the second color conversion section 520 may include a second photosensitive polymer BR2 and a second quantum dot QD2 and a second scattering particle SC2 dispersed in the second photosensitive polymer BR2.

[0069] The second quantum dot QD2 can be excited by blue light Lb to isotropically emit green light Lg with a wavelength longer than that of blue light Lb. The second photosensitive polymer BR2 can be a transparent organic material.

[0070] The second scattering particle SC2 can scatter blue light Lb that is not absorbed by the second quantum dot QD2, thereby exciting more second quantum dots QD2 and improving color conversion efficiency. The second scattering particle SC2 can be, for example, TiO2 and / or metal particles. The second quantum dot QD2 can be selected from group II-VI compounds, group III-V compounds, group IV-VI compounds, group IV elements, group IV compounds and combinations thereof.

[0071] In some embodiments, the first quantum dot QD1 and the second quantum dot QD2 may comprise the same material. In some embodiments, the size of the second quantum dot QD2 may be larger than the size of the first quantum dot QD1.

[0072] The transmission portion 530 can transmit blue light Lb without converting the blue light Lb incident on the transmission portion 530. For example... Figure 3 As shown, the transmission portion 530 may include a third photopolymer BR3 in which third scattering particles SC3 are dispersed. The third photopolymer BR3 may be a light-transmitting organic material (such as silicone resin and / or epoxy resin) and may be the same material as the first photopolymer BR1 and the second photopolymer BR2. The third scattering particles SC3 may scatter and emit blue light Lb and may include the same material as the first scattering particles SC1 and the second scattering particles SC2.

[0073] Figure 4 This is an equivalent circuit diagram of pixels disposed in display device 1 according to an embodiment. Figure 4 The sub-pixel circuit PC shown corresponds to the reference above. Figure 2 Each of the first sub-pixel circuit PC1, the second sub-pixel circuit PC2, and the third sub-pixel circuit PC3 is described, and Figure 4 The light-emitting diode (LED) shown can correspond to the reference above. Figure 2 Each of the first light-emitting diode LED1, the second light-emitting diode LED2, and the third light-emitting diode LED3 is described.

[0074] Reference Figure 4 The sub-pixel electrode (e.g., anode) of the light-emitting diode (LED) can be connected to the sub-pixel circuit PC, and the counter electrode (e.g., cathode) of the LED can be connected to the common voltage line VSL configured to provide a common voltage ELVSS. The LED can emit light with a brightness corresponding to the amount of current supplied from the sub-pixel circuit PC.

[0075] The sub-pixel circuit PC can control the amount of current flowing from the driving voltage line VDL through the light-emitting diode (LED) to the common voltage line VSL in response to a data signal. The sub-pixel circuit PC may include a first thin-film transistor (TFT) T1, a second TFT T2, a third TFT T3, and a storage capacitor Cst.

[0076] Each of the first thin-film transistor T1, the second thin-film transistor T2, and the third thin-film transistor T3 may be an oxide semiconductor transistor comprising a semiconductor layer made of oxide semiconductor and / or a silicon semiconductor transistor comprising a semiconductor layer made of polycrystalline silicon. Depending on the type (or variety) of the thin-film transistor, the first electrode may be selected from one of the source electrode and the drain electrode, and the second electrode may be selected from the other of the source electrode and the drain electrode.

[0077] The first thin-film transistor T1 can be a driving thin-film transistor. The first electrode of the first thin-film transistor T1 can be connected to a driving voltage line VDL configured to provide a driving voltage ELVDD, and the second electrode of the first thin-film transistor T1 can be connected to a sub-pixel electrode of a light-emitting diode (LED). The gate electrode of the first thin-film transistor T1 can be connected to a first node N1. The first thin-film transistor T1 can be configured to control the amount of current flowing through the LED from the driving voltage line VDL in response to the voltage at the first node N1.

[0078] The second thin-film transistor T2 can be a switching thin-film transistor. The first electrode of the second thin-film transistor T2 can be connected to the data line DL, and the second electrode of the second thin-film transistor T2 can be connected to the first node N1. The gate electrode of the second thin-film transistor T2 can be connected to the scan line SL. The second thin-film transistor T2 can be configured to conduct when a scan signal is supplied to the scan line SL, and electrically connect the data line DL to the first node N1.

[0079] The third thin-film transistor T3 can be an initialization thin-film transistor and / or a sensing thin-film transistor. The first electrode of the third thin-film transistor T3 can be connected to the second node N2, and the second electrode of the third thin-film transistor T3 can be connected to the sensing line ISL. The gate electrode of the third thin-film transistor T3 can be connected to the control line CL.

[0080] The storage capacitor Cst can be connected between the first node N1 and the second node N2. For example, the first capacitor electrode of the storage capacitor Cst can be connected to the gate electrode of the first thin-film transistor T1, and the second capacitor electrode of the storage capacitor Cst can be connected to the sub-pixel electrode of the light-emitting diode LED.

[0081] although Figure 4 An example is shown in which the first thin-film transistor T1, the second thin-film transistor T2, and the third thin-film transistor T3 are NMOS transistors, but the disclosure is not limited thereto. For example, at least one of the first thin-film transistor T1, the second thin-film transistor T2, and the third thin-film transistor T3 may be a PMOS transistor.

[0082] Despite Figure 4The diagram shows three thin-film transistors, but the disclosure is not limited thereto. The sub-pixel circuit PC may include four or more thin-film transistors.

[0083] Figure 5 This is a schematic cross-sectional view of the display device 1 according to an embodiment. Figure 6 This is a schematic plan view of display device 1 according to an embodiment. Figure 7 This is a schematic cross-sectional view of the encapsulation layer TFE1 of the display device 1 according to an embodiment.

[0084] First, refer to Figure 5 The display device 1 may include a first sub-pixel PX1, a second sub-pixel PX2, and a third sub-pixel PX3 that emit light of different colors. For example, the first sub-pixel PX1 may emit red light Lr, the second sub-pixel PX2 may emit green light Lg, and the third sub-pixel PX3 may emit blue light Lb.

[0085] Display device 1 may have a stacked structure, which includes a substrate 100, a circuit layer PCL on the substrate 100, a display element layer DEL, a packaging layer TFE1, a color conversion-transmission layer FNL, an upper packaging layer TFE2, and a color filter layer CFL. The display element layer DEL may include a first light-emitting diode LED1, a second light-emitting diode LED2, and a third light-emitting diode LED3, which are respectively electrically connected to the sub-pixel circuits of the circuit layer PCL. The circuit layer PCL may include a plurality of sub-pixel circuits corresponding to the first sub-pixel PX1, the second sub-pixel PX2, and the third sub-pixel PX3, and each of the sub-pixel circuits may be as described in reference to... Figure 4 The description includes multiple thin-film transistors (TFTs) and a storage capacitor Cst. For example, the thin-film transistor TFT can be... Figure 4 The driving thin-film transistor T1 in the middle.

[0086] The substrate 100 may comprise glass and / or a polymer resin. In embodiments, the polymer resin may comprise at least one of polyethersulfone, polyarylate, polyetherimide, polyethylene naphthalate, polyethylene terephthalate, polyphenylene sulfide, polyimide, polycarbonate, cellulose triacetate, cellulose acetate propionate, etc. The substrate 100 may have a single-layer or multi-layer structure comprising the aforementioned materials. In embodiments, the substrate 100 may have a structure comprising organic / inorganic / organic materials.

[0087] The circuit layer PCL can be set on the substrate 100. Figure 5 The circuit layer PCL is shown to include a first buffer layer 111, a second buffer layer 112, a gate insulating layer 113, an interlayer insulating layer 115, and a planarization layer 118 disposed below and / or above the thin-film transistor TFT, the storage capacitor Cst, and their associated components.

[0088] The first buffer layer 111 and the second buffer layer 112 can reduce or block the penetration of foreign matter, moisture and / or external air from the lower part of the substrate 100. The first buffer layer 111 and the second buffer layer 112 may both include inorganic insulating materials (such as silicon nitride, silicon oxynitride and / or silicon oxide), and may include a single layer or multiple layers containing the aforementioned inorganic insulating materials.

[0089] A bias electrode BSM may be disposed on the first buffer layer 111 to correspond to the thin-film transistor (TFT). In an embodiment, a voltage may be applied to the bias electrode BSM. In an embodiment, the bias electrode BSM can prevent or reduce external light incident on the semiconductor layer Act. Therefore, the characteristics of the thin-film transistor (TFT) can be stabilized. In some embodiments, the bias electrode BSM may be omitted.

[0090] A semiconductor layer Act may be disposed on the second buffer layer 112. The semiconductor layer Act may comprise amorphous silicon or polycrystalline silicon. In another embodiment, the semiconductor layer Act may comprise an oxide of at least one material selected from the group consisting of indium (In), gallium (Ga), tin (Sn), zirconium (Zr), vanadium (V), hafnium (Hf), cadmium (Cd), germanium (Ge), chromium (Cr), titanium (Ti), aluminum (Al), cesium (Cs), cerium (Ce), and zinc (Zn). In some embodiments, the semiconductor layer Act may comprise a Zn oxide material, such as Zn oxide, In-Zn oxide, or Ga-In-Zn oxide. In some embodiments, the semiconductor layer Act may comprise an In-Ga-Zn-O (IGZO), In-Sn-Zn-O (ITZO), or In-Ga-Sn-Zn-O (IGTZO) semiconductor in which a metal (such as indium (In), gallium (Ga), or tin (Sn)) is contained within ZnO. The semiconductor layer Act may include a channel region and source and drain regions respectively disposed on both sides of the channel region. The gate electrode GE may be stacked with the channel region of the semiconductor layer Act.

[0091] The gate electrode GE may include a low-resistance metallic material (e.g., a low-resistance metal material). The gate electrode GE may include a conductive material (e.g., an electrically conductive material) such as molybdenum (Mo), aluminum (Al), copper (Cu) and / or titanium (Ti), and may be formed as a single layer or multiple layers including the aforementioned materials.

[0092] The gate insulating layer 113 may be located between the semiconductor layer Act and the gate electrode GE. The gate insulating layer 113 may include inorganic insulating materials such as silicon oxide, silicon nitride, silicon oxynitride, aluminum oxide, titanium oxide, tantalum oxide, hafnium oxide and / or zinc oxide.

[0093] The first electrode CE1 of the storage capacitor Cst can be disposed on the same layer as the gate electrode GE. The first electrode CE1 can comprise the same material as the gate electrode GE. Figure 5 In one embodiment, the gate electrode GE of the thin-film transistor TFT and the first electrode CE1 of the storage capacitor Cst are disposed separately. However, in another embodiment, the storage capacitor Cst may be stacked with the thin-film transistor TFT. In this embodiment, the gate electrode GE of the thin-film transistor TFT can be used as the first electrode CE1 of the storage capacitor Cst.

[0094] The interlayer insulating layer 115 may be configured to cover the gate electrode GE. The interlayer insulating layer 115 may include inorganic insulating materials such as silicon oxide, silicon nitride, silicon oxynitride, aluminum oxide, titanium oxide, tantalum oxide, hafnium oxide and / or zinc oxide.

[0095] The second electrode CE2, source electrode SE, and drain electrode DE of the storage capacitor Cst can be disposed on the interlayer insulating layer 115.

[0096] The second electrode CE2, source electrode SE, and drain electrode DE of the storage capacitor Cst can all comprise conductive materials including molybdenum (Mo), aluminum (Al), copper (Cu), and / or titanium (Ti), and can all comprise multilayers or single layers containing the aforementioned materials. For example, the second electrode CE2, source electrode SE, and drain electrode DE of the storage capacitor Cst can all have a multilayer structure including a Ti / Al / Ti layer. The source electrode SE and drain electrode DE can be connected to the source and drain regions of the semiconductor layer Act, respectively, through contact holes.

[0097] The second electrode CE2 of the storage capacitor Cst can be stacked with the first electrode CE1, and an interlayer insulating layer 115 is disposed between the second electrode CE2 and the first electrode CE1, thereby forming the storage capacitor Cst. In an embodiment, the interlayer insulating layer 115 can be used as the dielectric layer of the storage capacitor Cst.

[0098] The planarization layer 118 can be configured to cover the second electrode CE2, source electrode SE, and drain electrode DE of the storage capacitor Cst. The planarization layer 118 can be formed as a single-layer or multi-layer film comprising organic materials and can provide a flat upper surface. The planarization layer 118 can include general-purpose polymers such as benzocyclobutene (BCB), polyimide, hexamethyldisiloxane (HMDSO), polymethyl methacrylate (PMMA), and / or polystyrene (PS)), polymer derivatives having phenolic groups, acryloyl polymers, imide polymers, aryl ether polymers, amide polymers, fluorinated polymers, p-xylene polymers, vinyl alcohol polymers, and / or blends thereof.

[0099] The display element layer (DEL) can be disposed on the circuit layer (PCL) having the above-described structure. The display element layer (DEL) may include a first light-emitting diode (LED1), a second light-emitting diode (LED2), and a third light-emitting diode (LED3) as display elements; these are organic light-emitting diodes (OLEDs). Each of the first LED1, second LED2, and third LED3 may include a first sub-pixel electrode 210R, a second sub-pixel electrode 210G, and a third sub-pixel electrode 210B. In an embodiment, the first LED1, second LED2, and third LED3 may collectively include an emission layer 220 and a counter electrode 230.

[0100] The first sub-pixel electrode 210R, the second sub-pixel electrode 210G, and the third sub-pixel electrode 210B can be (semi-)transparent electrodes or reflective electrodes. In some embodiments, the first sub-pixel electrode 210R, the second sub-pixel electrode 210G, and the third sub-pixel electrode 210B may all comprise conductive oxides, such as indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), indium oxide (In2O3), indium gallium oxide (IGO), and / or aluminum zinc oxide (AZO). In embodiments, the first sub-pixel electrode 210R, the second sub-pixel electrode 210G, and the third sub-pixel electrode 210B may all comprise a reflective layer, which comprises silver (Ag), magnesium (Mg), aluminum (Al), platinum (Pt), palladium (Pd), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), or compounds or mixtures thereof. In embodiments, a layer comprising ITO, IZO, ZnO, and / or In2O3 may be further included above / below the aforementioned reflective layer. For example, the first sub-pixel electrode 210R, the second sub-pixel electrode 210G, and the third sub-pixel electrode 210B may all include an ITO / Ag / ITO layer.

[0101] A first dam layer 215 may be disposed on the planarization layer 118. The first dam layer 215 may have an opening 215OP that exposes the central portion of each of the first sub-pixel electrode 210R, the second sub-pixel electrode 210G, and the third sub-pixel electrode 210B. The first dam layer 215 may cover the edges of each of the first sub-pixel electrode 210R, the second sub-pixel electrode 210G, and the third sub-pixel electrode 210B. The first dam layer 215 can prevent arcing or the like (or reduce the likelihood, occurrence, or degree of arcing or the like) at the edges of the first sub-pixel electrode 210R, the second sub-pixel electrode 210G, and the third sub-pixel electrode 210B by increasing the distance between the edges of the first sub-pixel electrode 210R, the second sub-pixel electrode 210G, and the third sub-pixel electrode 210B and the counter electrode 230 above the first sub-pixel electrode 210R, the second sub-pixel electrode 210B.

[0102] The first embankment layer 215 may include at least one organic insulating material selected from the group consisting of polyimide, polyamide, acrylic resin, benzocyclobutene, and phenolic resin.

[0103] The emitting layer 220 commonly included in the first light-emitting diode LED1, the second light-emitting diode LED2, and the third light-emitting diode LED3 may comprise organic materials, including fluorescent and / or phosphorescent materials that emit red, green, blue, and / or white light. The emitting layer 220 may comprise low-molecular-weight organic materials (e.g., low molecular weight organic materials) and / or high-molecular-weight organic materials (e.g., high molecular weight organic materials), and functional layers such as a hole transport layer (HTL), a hole injection layer (HIL), an electron transport layer (ETL), and an electron injection layer (EIL) may optionally be further disposed below and above the emitting layer 220. Figure 5 As shown, the emitting layer 220 can be integrally formed as a single body over the first sub-pixel electrode 210R, the second sub-pixel electrode 210G, and the third sub-pixel electrode 210B. However, the disclosure is not limited thereto. In some embodiments, the emitting layer 220 may include layers patterned to correspond to each of the first sub-pixel electrode 210R, the second sub-pixel electrode 210G, and the third sub-pixel electrode 210B. In an embodiment, the emitting layer 220 may be a first color emitting layer. The first color emitting layer may emit light in a first wavelength band (e.g., it may emit blue light). In an embodiment, the emitting layer 220 may emit light with wavelengths in the range of about 450 nm to about 495 nm.

[0104] The counter electrode 230 can be disposed on the emitter layer 220 and can be configured to correspond to the first sub-pixel electrode 210R, the second sub-pixel electrode 210G, and the third sub-pixel electrode 210B. The counter electrode 230 can be integrally formed as a single body above the first sub-pixel electrode 210R, the second sub-pixel electrode 210G, and the third sub-pixel electrode 210B. In embodiments, the counter electrode 230 can include a conductive material with low work function. For example, the counter electrode 230 can include a (semi-)transparent layer comprising silver (Ag), magnesium (Mg), aluminum (Al), platinum (Pt), palladium (Pd), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), lithium (Li), calcium (Ca), and / or alloys thereof. In embodiments, the counter electrode 230 can also include a layer on the (semi-)transparent layer comprising the aforementioned materials, such as an ITO, IZO, ZnO, and / or In2O3 layer.

[0105] The first emission region EA1, the second emission region EA2, and the third emission region EA3 can correspond to the first sub-pixel PX1, the second sub-pixel PX2, and the third sub-pixel PX3, respectively. The first emission region EA1, the second emission region EA2, and the third emission region EA3 can be regions from which light generated by the first light-emitting diode LED1, the second light-emitting diode LED2, and the third light-emitting diode LED3 is emitted to the outside. The first emission region EA1 can be defined as the portion of the first sub-pixel electrode 210R exposed through the opening 215OP of the first dam layer 215. The second emission region EA2 can be defined as the portion of the second sub-pixel electrode 210G exposed through the opening 215OP of the first dam layer 215. The third emission region EA3 can be defined as the portion of the third sub-pixel electrode 210B exposed through the opening 215OP of the first dam layer 215. In an embodiment, the first emission region EA1, the second emission region EA2, and the third emission region EA3 can each be defined by the opening 215OP of the first dam layer 215.

[0106] The first emission area EA1, the second emission area EA2, and the third emission area EA3 can be separated from each other. The area of ​​display area DA other than the first emission area EA1, the second emission area EA2, and the third emission area EA3 can be a non-emission area. The first emission area EA1, the second emission area EA2, and the third emission area EA3 can be distinguished by their non-emission areas.

[0107] The first dam layer 215 may also include spacers to prevent mask imprinting. In embodiments, the spacers may be integrally formed with the first dam layer 215. For example, a halftone masking process may be used to form the spacers and the first dam layer 215 simultaneously in the same process.

[0108] The encapsulation layer TFE1 can be configured to cover the display element layer DEL. Because the first light-emitting diode LED1, the second light-emitting diode LED2, and the third light-emitting diode LED3 may be easily damaged by moisture and / or oxygen introduced from the outside, they can be protected by covering them with the encapsulation layer TFE1. The encapsulation layer TFE1 can cover the display area DA and extend beyond the display area DA. The encapsulation layer TFE1 may include at least one organic encapsulation layer and at least one inorganic encapsulation layer. For example, the encapsulation layer TFE1 may include a first inorganic encapsulation layer 310, a first organic encapsulation layer 320, and a second inorganic encapsulation layer 330 stacked sequentially. In some embodiments, other layers, such as a capping layer, may be further disposed between the first inorganic encapsulation layer 310 and the counter electrode 230.

[0109] The first inorganic encapsulation layer 310 and the second inorganic encapsulation layer 330 may each comprise one or more inorganic materials selected from alumina, titanium oxide, tantalum oxide, hafnium oxide, zinc oxide, silicon oxide, silicon nitride, and silicon oxynitride. In an embodiment, the first inorganic encapsulation layer 310 disposed beneath the patterned layer 340 may be an inorganic insulating layer with a relatively high oxygen content. For example, when the first inorganic encapsulation layer 310 comprises silicon oxynitride, the first inorganic encapsulation layer 310 may comprise silicon (Si), oxygen (O), and nitrogen (N). In an embodiment, the first inorganic encapsulation layer 310 may have a relatively high oxygen (O) content ratio.

[0110] The first organic encapsulation layer 320 may include a polymeric material. Examples of polymeric materials may include acrylic resins, epoxy resins, polyimides, and polyethylene. In an embodiment, the first organic encapsulation layer 320 may include an acrylate. The first organic encapsulation layer 320 may be formed by curing monomers and / or applying polymers.

[0111] Because the encapsulation layer TFE1 has the aforementioned multilayer structure, even if a crack occurs within the encapsulation layer TFE1, the propagation of the crack between the first inorganic encapsulation layer 310 and the first organic encapsulation layer 320 and / or between the first organic encapsulation layer 320 and the second inorganic encapsulation layer 330 can be prevented or reduced. This also prevents or reduces the path through which external moisture and / or oxygen can permeate the display area DA.

[0112] Reference Figure 5 and Figure 7The encapsulation layer TFE1 may further include a pattern layer 340. In an embodiment, the pattern layer 340 may be disposed between the first inorganic encapsulation layer 310 and the first organic encapsulation layer 320. In an embodiment, the encapsulation layer TFE1 may have a structure in which the first inorganic encapsulation layer 310, the pattern layer 340, the first organic encapsulation layer 320, and the second inorganic encapsulation layer 330 are sequentially stacked. The lower surface of the pattern layer 340 may be in direct contact with the upper surface of the first inorganic encapsulation layer 310, and the upper surface of the pattern layer 340 may be in direct contact with the lower surface of the first organic encapsulation layer 320.

[0113] In an embodiment, the pattern layer 340 may include a plurality of protruding pattern portions 340P. The plurality of protruding pattern portions 340P may be disposed on the upper surface of the pattern layer 340 and may be protrusions projecting toward the first organic encapsulation layer 320. The plurality of protruding pattern portions 340P may have the same shape and may be disposed on the upper surface of the pattern layer 340 at a predetermined or specific distance from each other. In an embodiment, based on the thickness direction of the substrate 100, the thickness of the pattern layer 340 may be 2 μm or less. In an embodiment, the thickness of each of the plurality of protruding pattern portions 340P may be from about 0.2 μm to about 2 μm.

[0114] Reference Figure 5 and Figure 6 Multiple protruding pattern portions 340P can be disposed between adjacent light-emitting diodes. For example, the protruding pattern portions 340P can be disposed between the first light-emitting diode LED1 and the second light-emitting diode LED2, and between the second light-emitting diode LED2 and the third light-emitting diode LED3. In an embodiment, the multiple protruding pattern portions 340P can be disposed overlaid with a non-emitting area in a planar view. As described above, the non-emitting area can be the area in the display area DA other than the first emitting area EA1, the second emitting area EA2, and the third emitting area EA3.

[0115] Since multiple protruding pattern portions 340P are disposed on the upper surface of the pattern layer 340, the upper surface of the pattern layer 340 can be used as a surface with unevenness. In an embodiment, the upper surface of the pattern layer 340 may have protruding pattern portions and recessed portions disposed in a repeating manner. In an embodiment, the recessed portions correspond to multiple light-emitting diodes (e.g., first light-emitting diode LED1, second light-emitting diode LED2, and third light-emitting diode LED3) and may refer to the recessed upper surface. For example, the upper surface of the pattern layer 340 may be a curved surface in which multiple protruding pattern portions 340P and recessed portions are disposed.

[0116] In an embodiment, only one of the plurality of protruding pattern portions 340P may be disposed between light-emitting diodes disposed adjacent to each other. For example, as Figure 6 As shown, when the first sub-pixel PX1 in the nth row, the two second sub-pixels PX2 in the n+1th row, and the third sub-pixel PX3 in the n+2th row are arranged adjacent to each other to form a virtual quadrilateral shape, a protruding pattern portion 340P can be set at the center of the virtual quadrilateral shape.

[0117] In a plan view (e.g., when viewed in a direction perpendicular to the base 100), each of the plurality of protruding pattern portions 340P may have a quadrilateral shape. For example, each of the plurality of protruding pattern portions 340P may have a rhombus shape. In an embodiment, the length of one side of the protruding pattern portion 340P having a rhombus shape in the plan view may be from about 5 μm to about 15 μm. However, the disclosure is not limited thereto, and each of the plurality of protruding pattern portions 340P may also have a polygonal shape or a circular shape other than a quadrilateral shape.

[0118] In an embodiment, such as Figure 5 and Figure 7 As shown, each of the plurality of protruding pattern portions 340P may have a rectangular shape in a cross-sectional view (e.g., when viewed in the thickness direction of the substrate 100). For example, the side surfaces of the protruding pattern portions 340P may be perpendicular to the upper surface of the first inorganic encapsulation layer 310. In an embodiment, the width in the upper portion and the width in the lower portion of each of the plurality of protruding pattern portions 340P may be the same.

[0119] According to an embodiment, since the encapsulation layer TFE1 includes a patterned layer 340 having the above-described structure, the display device 1 can form a robust structure by increasing the adhesive strength of the encapsulation layer TFE1. In an embodiment, the display device 1 is formed by stacking multiple layers on the substrate 100, and tearing may occur at the interfaces between the layers due to the tensile stress of each of the stacked layers. In an embodiment, the thicker the stacked layers, the greater the tensile stress, and organic layers may have greater tensile stress than inorganic layers. In an embodiment, layers integrally disposed in the display device 1 can generate greater stress on the display device 1 than layers in the display device 1 configured with patterns (such as island patterns) spaced apart from each other. In embodiments where layers with such large tensile stress exist, defects such as tearing of interfaces with weak adhesion may occur.

[0120] Typically, the first organic encapsulation layer 320 may have a greater thickness than the first inorganic encapsulation layer 310 and the second inorganic encapsulation layer 330 to planarize the upper surface of the display element, and may include an organic layer containing organic materials. In an embodiment, the first organic encapsulation layer 320 may be disposed across the entire surface of the substrate 100, rather than in an island pattern corresponding to each sub-pixel. In an embodiment, the first organic encapsulation layer 320 experiences strong tensile stress, therefore, tearing may occur not only within the first organic encapsulation layer 320 but also between underlying layers.

[0121] Therefore, the display device 1 according to the embodiment can prevent tearing defects caused by tensile stress (or reduce the likelihood, occurrence, or severity of tearing defects) by providing a pattern layer 340 between the first inorganic encapsulation layer 310 and the first organic encapsulation layer 320. Because the pattern layer 340 includes a plurality of protruding pattern portions 340P disposed on the upper surface facing the first organic encapsulation layer 320, the contact area between the pattern layer 340 and the first organic encapsulation layer 320 can be increased, thereby improving the adhesive strength between the pattern layer 340 and the first organic encapsulation layer 320.

[0122] Pattern layer 340 may include a material comprising a matrix resin and a silane coupling agent dispersed in the matrix resin. In embodiments, the matrix resin of pattern layer 340 may include the same material as the first organic encapsulation layer 320. For example, the matrix resin of pattern layer 340 may include a polymeric material. Examples of polymeric materials may include acrylic resins, epoxy resins, polyimides, and polyethylene. In embodiments, pattern layer 340 may include an amount of about 0.5 wt% to about 6 wt% of the silane coupling agent based on the total weight of pattern layer 340. However, the disclosure is not limited thereto, and the content of the silane coupling agent may be higher.

[0123] A silane coupling agent can refer to a compound having a reactive group on one side capable of bonding with an organic material and a reactive group on the other side capable of bonding with an inorganic material. A silane coupling agent may include a first end chemically bonded to a first inorganic encapsulation layer 310 and a second end chemically bonded to a first organic encapsulation layer 320. In embodiments, the first end may be an alkoxysilyl group, and the second end may be an acryloyloxy group, a methacryloxy group, an epoxy group, an amino group, or an isocyanate ester. For example, the silane coupling agent may include γ-glycidoxypropyltriethoxysilane, γ-glycidoxypropyltrimethoxysilane, γ-glycidoxypropylmethyldiethoxysilane, γ-glycidoxypropylmethyldimethoxysilane, 3-chloropropyltrimethoxysilane, 3-chloropropyltriethoxysilane, 2-chloroethyltrimethoxysilane, 2-chloroethyltriethoxysilane, γ-methacryloyloxypropyltrimethoxysilane, γ-methacryloyloxypropylmethyldimethoxysilane, γ-methacryloyloxypropyldimethylmethoxysilane, or any combination thereof. Because the silane coupling agent includes a first end and a second end, the adhesive strength between the first inorganic encapsulation layer 310 and the first organic encapsulation layer 320 can be improved, and the mechanical durability of the encapsulation layer TFE1 can be improved.

[0124] In an embodiment, after the first organic encapsulation layer 320 is formed on the patterned layer 340 including the silane coupling agent, the display device 1 may additionally undergo an ultraviolet (UV) curing process and a heat treatment process. First, during the UV curing process, covalent bonds can be induced between the acrylate groups at one end of the silane coupling agent in the patterned layer 340 and the acrylate groups of the first organic encapsulation layer 320. In an embodiment, hydrogen bonds can be induced between the silane coupling agent in the patterned layer 340 and the material constituting the first organic encapsulation layer 320. In this way, a strong bond can be formed between the patterned layer 340 and the cured first organic encapsulation layer 320.

[0125] Similarly, during the heat treatment process, covalent bonds can be induced between one end of the silane coupling agent in the patterned layer 340 and the material constituting the first inorganic encapsulation layer 310. For example, a covalent bond can be formed between one end of the silane coupling agent molecule (e.g., a methoxy group, -OCH3) and a hydroxyl group (-OH) on the surface of the first inorganic encapsulation layer 310. In this way, a strong bond can also be formed between the patterned layer 340 and the first inorganic encapsulation layer 310.

[0126] For example, the silane coupling agent of the pattern layer 340 can form chemical bonds with both the first inorganic encapsulation layer 310 and the first organic encapsulation layer 320, thereby further enhancing the adhesive strength between the first inorganic encapsulation layer 310 and the first organic encapsulation layer 320. In the display device 1 according to the embodiment, since the pattern layer 340 includes a plurality of protruding pattern portions 340P and is made of a material including the silane coupling agent, the adhesive strength between the first inorganic encapsulation layer 310 and the first organic encapsulation layer 320 can be significantly improved, and tearing defects of the encapsulation layer TFE1 can be prevented (or the likelihood of tearing defects, the occurrence of tearing defects, or the degree of tearing defects can be reduced), thereby forming a robust structure.

[0127] Return to reference Figure 5 The color conversion-transmission layer FNL can be disposed on the encapsulation layer TFE1. The color conversion-transmission layer FNL may include a first color conversion portion 510, a second color conversion portion 520, a transmission portion 530, and a second dam layer 600. The color conversion-transmission layer FNL can be in direct contact with the second inorganic encapsulation layer 330 of the encapsulation layer TFE1.

[0128] The second barrier layer 600 may be disposed on the encapsulation layer TFE1. The second barrier layer 600 may include organic and / or inorganic materials. For example, the second barrier layer 600 may include inorganic materials such as silicon oxide, silicon nitride, and / or silicon oxynitride. In an embodiment, the second barrier layer 600 may include a light-blocking material to serve as a light-blocking layer. The light-blocking material may include at least one selected from, for example, black pigments, black dyes, black particles, and metal particles.

[0129] The second dam layer 600 may have an opening COP defined by a partition wall. The first opening COP1 of the second dam layer 600 may correspond to the opening 215OP of the first dam layer 215 that exposes the first sub-pixel electrode 210R, the second opening COP2 of the second dam layer 600 may correspond to the opening 215OP of the first dam layer 215 that exposes the second sub-pixel electrode 210G, and the third opening COP3 of the second dam layer 600 may correspond to the opening 215OP of the first dam layer 215 that exposes the third sub-pixel electrode 210B. For example, when viewed in a direction perpendicular to the substrate 100 (e.g., the z-axis direction), the first opening COP1 of the second dam layer 600 can be superimposed on the opening 215OP of the first dam layer 215 that exposes the first sub-pixel electrode 210R, the second opening COP2 of the second dam layer 600 can be superimposed on the opening 215OP of the first dam layer 215 that exposes the second sub-pixel electrode 210G, and the third opening COP3 of the second dam layer 600 can be superimposed on the opening 215OP of the first dam layer 215 that exposes the third sub-pixel electrode 210B. A partition wall can be disposed between the first opening COP1, the second opening COP2, and the third opening COP3 of the second dam layer 600.

[0130] The first color conversion portion 510, the second color conversion portion 520, and the transmission portion 530 may fill the opening COP of the second embankment layer 600. In an embodiment, the first color conversion portion 510, the second color conversion portion 520, and the transmission portion 530 may each include at least one selected from quantum dots and scattering particles (e.g., light scattering particles).

[0131] The first color conversion portion 510 can fill the first opening COP1 of the second embankment layer 600. The first color conversion portion 510 can be superimposed on the first emission region EA1. The first sub-pixel PX1 can include a first light-emitting diode LED1 and the first color conversion portion 510.

[0132] The first color conversion section 510 can convert light of a first wavelength generated in the emission layer 220 on the first sub-pixel electrode 210R into light of a second wavelength. The first color conversion section 510 can convert blue light into red light. For example, when light with a wavelength of approximately 450 nm to approximately 495 nm is generated from the emission layer 220 on the first sub-pixel electrode 210R, the first color conversion section 510 can convert the light into light with a wavelength of approximately 630 nm to approximately 780 nm. Therefore, light with a wavelength of approximately 630 nm to approximately 780 nm can be emitted from the first sub-pixel PX1 to the outside.

[0133] The first color conversion section 510 may include a first photosensitive polymer BR1 and a first quantum dot QD1 and a first scattering particle SC1 dispersed in the first photosensitive polymer BR1.

[0134] The second color conversion portion 520 can fill the second opening COP2 of the second embankment layer 600. The second color conversion portion 520 can be superimposed on the second emission region EA2. The second sub-pixel PX2 can include a second light-emitting diode LED2 and the second color conversion portion 520.

[0135] The second color conversion section 520 can convert light of a first wavelength band generated from the emission layer 220 on the second sub-pixel electrode 210G into light of a third wavelength band. The second color conversion section 520 can convert blue light into green light. For example, when light with a wavelength of approximately 450 nm to approximately 495 nm is generated from the emission layer 220 on the second sub-pixel electrode 210G, the second color conversion section 520 can convert the light into light with a wavelength of approximately 495 nm to approximately 570 nm. Therefore, light with a wavelength of approximately 495 nm to approximately 570 nm can be emitted from the second sub-pixel PX2 to the outside.

[0136] The second color conversion section 520 may include a second photosensitive polymer BR2 and a second quantum dot QD2 and a second scattering particle SC2 dispersed in the second photosensitive polymer BR2.

[0137] The transmissive portion 530 may fill the third opening COP3 of the second embankment layer 600. The transmissive portion 530 may be stacked with the third emitting region EA3. The third sub-pixel PX3 may include a third light-emitting diode LED3 and the transmissive portion 530.

[0138] The transmission portion 530 can emit light generated in the emission layer 220 on the third sub-pixel electrode 210B to the outside without wavelength conversion. The transmission portion 530 can transmit blue light without conversion. For example, when light with a wavelength of about 450 nm to about 495 nm is generated in the emission layer 220 on the third sub-pixel electrode 210B, the transmission portion 530 can emit the light to the outside without wavelength conversion.

[0139] The transmission portion 530 may include a third photosensitive polymer BR3 in which third scattering particles SC3 are dispersed. In an embodiment, the transmission portion 530 may not include quantum dots.

[0140] At least one of the first quantum dot QD1 and the second quantum dot QD2 may include semiconductor materials such as cadmium sulfide (CdS), cadmium telluride (CdTe), zinc sulfide (ZnS), and / or indium phosphide (InP). The size of the quantum dot may be several nanometers, and the wavelength of the converted light may vary depending on the size of the quantum dot.

[0141] In the embodiments, the core of the quantum dot may be selected from group II-VI compounds, group III-V compounds, group IV-VI compounds, group IV elements, group IV compounds and combinations thereof.

[0142] Group II-VI compounds can be selected from binary, ternary, and quaternary compounds. The binary compounds are selected from the group consisting of CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, MgSe, MgS, and mixtures thereof. The ternary compounds are selected from AgInS, CuInS, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, and HgSTe. e, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, MgZnSe, MgZnS and mixtures thereof, wherein the quaternary compound is selected from the group consisting of CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, HgZnSTe and mixtures thereof.

[0143] III-V group compounds may be selected from binary, ternary and quaternary compounds. The binary compounds are selected from the group consisting of GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb and mixtures thereof. The ternary compounds are selected from the group consisting of GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InGaP, InNP, InNAs, InNSb, InPAs, InPSb and mixtures thereof. The quaternary compounds are selected from the group consisting of GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, InAlPSb and mixtures thereof.

[0144] Group IV-VI compounds can be selected from binary, ternary, and quaternary compounds. Binary compounds are selected from the group consisting of SnS, SnSe, SnTe, PbS, PbSe, PbTe, and mixtures thereof. Ternary compounds are selected from the group consisting of SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, and mixtures thereof. Quaternary compounds are selected from the group consisting of SnPbSSe, SnPbSeTe, SnPbSTe, and mixtures thereof. Group IV elements can be selected from Si, Ge, and mixtures thereof. Group IV compounds can be binary compounds selected from the group consisting of SiC, SiGe, and mixtures thereof.

[0145] In embodiments, binary, ternary, or quaternary compounds may exist in the particles at a uniform (e.g., substantially uniform) concentration, or they may exist in the same particle by being divided into states with partially different concentration distributions therebetween. In embodiments, quantum dots may have a core / shell structure in which one quantum dot surrounds another quantum dot. The interface between the core and shell may have a concentration gradient in which the concentration of the element present in the shell decreases along the direction toward the center of the core.

[0146] In some embodiments, the quantum dot may have a core / shell structure comprising the aforementioned core and a shell surrounding the core. The shell of the quantum dot may serve as a protective layer to prevent or reduce chemical modification of the core and to maintain semiconductor properties and / or as a charged layer to impart electrophoretic properties to the quantum dot. The shell may comprise a single layer or multiple layers. The interface between the core and the shell may have a concentration gradient in which the concentration of elements present in the shell decreases along the direction toward the center of the core. Examples of shells for quantum dots may include metal and / or nonmetal oxides, semiconductor compounds, or combinations thereof.

[0147] For example, metal and / or nonmetal oxides can be binary compounds (such as SiO2, Al2O3, TiO2, ZnO, MnO, Mn2O3, Mn3O4, CuO, FeO, Fe2O3, Fe3O4, CoO, Co3O4 and / or NiO) and / or ternary compounds (such as MgAl2O4, CoFe2O4, NiFe2O4 and / or CoMn2O4). However, the disclosure is not limited thereto.

[0148] In the embodiments, the semiconductor compound may be CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnSeS, ZnTeS, GaAs, GaP, GaSb, HgS, HgSe, HgTe, InAs, InP, InGaP, InSb, AlAs, AlP, and / or AlSb. However, the disclosure is not limited thereto.

[0149] In embodiments, the quantum dot may have a full width at half maximum (FWHM) of an emission wavelength spectrum of about 45 nm or less, about 40 nm or less, or, for example, about 30 nm or less, and color purity and / or color reproducibility may be improved within this range. In embodiments, because light emitted through such a quantum dot is emitted in all (e.g., substantially all) directions, a wide viewing angle can be improved.

[0150] In the embodiments, the shape of the quantum dots is not particularly limited to the shapes commonly used in the art, but shapes such as spheres, pyramids, multi-armed and / or cubic nanoparticles, nanotubes, nanowires, nanofibers and / or nanoplates can be used, for example.

[0151] Quantum dots can control the color of the emitted light based on their particle size, thus allowing them to have a variety of suitable emission colors, such as blue, red, and green.

[0152] The first scattering particle SC1, the second scattering particle SC2, and the third scattering particle SC3 can scatter light, thereby allowing more light to be emitted. The first scattering particle SC1, the second scattering particle SC2, and the third scattering particle SC3 can improve light emission efficiency. At least one of the first scattering particle SC1, the second scattering particle SC2, and the third scattering particle SC3 can be any suitable material selected from metals and / or metal oxides used for uniformly scattering light. For example, at least one of the first scattering particle SC1, the second scattering particle SC2, and the third scattering particle SC3 can be at least one selected from TiO2, ZrO2, Al2O3, In2O3, ZnO, SnO2, Sb2O3, and ITO. In embodiments, at least one of the first scattering particle SC1, the second scattering particle SC2, and the third scattering particle SC3 can have a refractive index of about 1.5 or greater. Therefore, the light emission efficiency of the color conversion-transmission layer FNL can be improved. In some embodiments, at least one of the first scattering particle SC1, the second scattering particle SC2, and the third scattering particle SC3 can be omitted.

[0153] The first photopolymer BR1, the second photopolymer BR2, and the third photopolymer BR3 may all comprise light-transmitting organic materials. For example, at least one selected from the first photopolymer BR1, the second photopolymer BR2, and the third photopolymer BR3 may comprise a polymer resin such as acrylic acid, BCB, and / or HMDSO.

[0154] The upper encapsulation layer TFE2 can be disposed on the color conversion-transmission layer FNL. The upper encapsulation layer TFE2 can prevent or reduce damage and / or contamination of the color conversion-transmission layer FNL by externally penetrating impurities (such as moisture and / or air), and can prevent the occurrence and propagation of cracks due to external forces (or can reduce the likelihood, occurrence, or severity of such cracks). The upper encapsulation layer TFE2 can enhance reliability by strengthening the protection of the color conversion-transmission layer FNL in a display device 1 having a structure in which components are stacked on a single substrate 100 without including the upper substrate.

[0155] The upper encapsulation layer TFE2 can cover the display area DA and extend outside the display area DA. The upper encapsulation layer TFE2 may include at least one organic encapsulation layer and at least one inorganic encapsulation layer. For example, the upper encapsulation layer TFE2 may include a third inorganic encapsulation layer 710, a second organic encapsulation layer 720 and a fourth inorganic encapsulation layer 730 stacked sequentially.

[0156] The third inorganic encapsulation layer 710 and the fourth inorganic encapsulation layer 730 may each comprise one or more inorganic materials selected from alumina, titanium oxide, tantalum oxide, hafnium oxide, zinc oxide, silicon oxide, silicon nitride, and silicon oxynitride. The second organic encapsulation layer 720 may comprise a polymeric material. Examples of polymeric materials may include acrylic resins, epoxy resins, polyimides, and polyethylene. In an embodiment, the second organic encapsulation layer 720 may comprise an acrylate. The second organic encapsulation layer 720 may be formed by curing monomers and / or applying polymers. In an embodiment, the upper encapsulation layer TFE2 may be omitted.

[0157] The color filter layer CFL can be disposed on the upper encapsulation layer TFE2. In an embodiment, the color filter layer CFL can be formed directly on the upper surface of the upper encapsulation layer TFE2 (in the z-axis direction) and can include a first color filter 810, a second color filter 820, a third color filter 830 and a light blocking portion BP.

[0158] The first color filter 810 can be disposed above the first color conversion portion 510 corresponding to the first sub-pixel PX1, the second color filter 820 can be disposed above the second color conversion portion 520 corresponding to the second sub-pixel PX2, and the third color filter 830 can be disposed above the transmissive portion 530 corresponding to the third sub-pixel PX3. The first color filter 810, the second color filter 820, and the third color filter 830 can all comprise photosensitive resin. In an embodiment, the first color filter 810, the second color filter 820, and the third color filter 830 can all comprise pigments and / or dyes that exhibit a set color or a unique color.

[0159] The first color filter 810 may be a color filter that transmits light of a first color. For example, the first color filter 810 may transmit only light with a wavelength of about 630 nm to about 780 nm. The first color filter 810 may include a red pigment and / or dye. The second color filter 820 may be a color filter that transmits light of a second color. For example, the second color filter 820 may transmit only light with a wavelength of about 495 nm to about 570 nm. The second color filter 820 may include a green pigment and / or dye. The third color filter 830 may be a color filter that transmits light of a third color. For example, the third color filter 830 may transmit only light with a wavelength of about 450 nm to about 495 nm. The third color filter 830 may include a blue pigment and / or dye.

[0160] The color filter layer (CFL) can reduce external light reflection from the display device 1. For example, when external light reaches the first color filter 810, only light of a preset wavelength can pass through the first color filter 810, as described above, and light of other wavelengths can be absorbed by the first color filter 810. Therefore, in the external light incident on the display device 1, only light of the preset wavelength can pass through the first color filter 810, and some of the light can be reflected by the counter electrode 230 and / or the first sub-pixel electrode 210R below the first color filter 810, and then emitted to the outside again. The first color filter 810 can reduce external light reflection by reflecting only some of the external light incident at the location where the first sub-pixel PX1 is disposed. This description can also be applied to the second color filter 820 and the third color filter 830.

[0161] The light-blocking portion BP can be formed by stacking at least two color layers selected from a first color layer 810P, a second color layer 820P, and a third color layer 830P, wherein the first color layer 810P, the second color layer 820P, and the third color layer 830P each comprise the same material as the first color filter 810, the second color filter 820, and the third color filter 830, respectively. The first color layer 810P, the second color layer 820P, and the third color layer 830P can be stacked on top of each other in non-emissive regions. The first color layer 810P, the second color layer 820P, and the third color layer 830P can be formed synchronously (e.g., simultaneously) with the first color filter 810, the second color filter 820, and the third color filter 830, respectively. With this configuration, even without a separate light-blocking component (such as a black matrix), the color filter layer CFL can prevent or reduce color mixing.

[0162] For example, the portions where the first color layer 810P and the second color layer 820P overlap, the portions where the second color layer 820P and the third color layer 830P overlap, the portions where the first color layer 810P and the third color layer 830P overlap, and the portions where the first color layer 810P, the second color layer 820P, and the third color layer 830P overlap can be used as a black matrix. For example, when the first color filter 810 allows only light with a wavelength of about 630 nm to about 780 nm to pass through and the third color filter 830 allows only light with a wavelength of about 450 nm to about 495 nm to pass through, this is because, theoretically, in the regions where the first color filter 810 and the third color filter 830 overlap, there is no light that can pass through both the first color filter 810 and the third color filter 830.

[0163] The light-blocking portion BP can be stacked with a partition wall disposed between the openings COP of the second dam layer 600 (e.g., a partition wall disposed between the first opening COP1 and the second opening COP2, a partition wall disposed between the second opening COP2 and the third opening COP3, or a partition wall disposed between the first opening COP1 and the third opening COP3). The first color layer 810P, the second color layer 820P, and the third color layer 830P can be a part of the first color filter 810, a part of the second color filter 820, and a part of the third color filter 830, respectively, corresponding to the partition wall of the second dam layer 600.

[0164] The outer coating 900 can be configured to cover the color filter layer CFL. The outer coating 900 can completely cover multiple color filters. The outer coating 900 can be in direct contact with the color filter layer CFL. The outer coating 900 can be an organic layer including organic materials. For example, the outer coating 900 can include light-transmitting organic materials such as polyimide resin, acrylic resin, and / or photoresist materials. The outer coating 900 can be formed by wet processes (such as slot coating and / or spin coating) and / or dry processes (such as chemical vapor deposition and / or vacuum deposition). This embodiment is not limited to these materials and formation methods.

[0165] The outer coating 900 protects the color filter layer CFL and can planarize the upper surface of the color filter layer CFL. Due to the stacked structure of the first color filter 810, the second color filter 820, and the third color filter 830 in the color filter layer CFL, the lower surface of the outer coating 900 can have an uneven structure. The lower surface of the outer coating 900 can have a concave surface corresponding to the convex surface included in the color filter layer CFL. The upper surface of the outer coating 900 can be mostly flat.

[0166] The thickness H of the outer coating 900 can be greater than the thickness of the color filter layer CFL. The thickness H of the outer coating 900 can be about 3 μm to about 8 μm or about 5 μm. The thickness H of the outer coating 900 can refer to the distance from the upper surface of the color filter layer CFL to the upper surface of the outer coating 900 in the direction perpendicular to the substrate 100 (z-axis direction).

[0167] In some embodiments, another layer (such as a capping layer) may be further disposed on the outer coating 900 and / or between the outer coating 900 and the color filter layer CFL. The capping layer may comprise an inorganic material. In some embodiments, the outer coating 900 may be covered with a window.

[0168] Figure 8 This is a schematic cross-sectional view of a display device 1 according to another embodiment. Figure 9 This is a schematic cross-sectional view of the encapsulation layer TFE1 of the display device 1 according to another embodiment. (Refer to...) Figure 8 and Figure 9 Apart from highlighting the features of the 340P pattern, the other features are the same as those in the reference. Figures 5 to 7 As described. Regarding Figure 8 and Figure 9 The components can be different from those of other components. Figures 5 to 7 The accompanying figures contain redundant descriptions of the same reference numerals, and the following description focuses on their differences.

[0169] Reference Figure 8 and Figure 9 The encapsulation layer TFE1 may have a structure in which a first inorganic encapsulation layer 310, a pattern layer 340', a first organic encapsulation layer 320, and a second inorganic encapsulation layer 330 are sequentially stacked. In an embodiment, the pattern layer 340' may include a plurality of protruding pattern portions 340P'. The plurality of protruding pattern portions 340P' may be disposed on the upper surface of the pattern layer 340' and may be protrusions protruding toward the first organic encapsulation layer 320. The plurality of protruding pattern portions 340P' may be disposed between light-emitting diodes disposed adjacent to each other. Therefore, the upper surface of the pattern layer 340' may have a repeating arrangement of protruding pattern portions 340P' and recessed portions corresponding to the light-emitting diodes.

[0170] In an embodiment, each of the plurality of protruding pattern portions 340P' may have a trapezoidal shape in a cross-sectional view (e.g., when viewed along the thickness direction of the substrate 100). For example, the side surfaces of the protruding pattern portions 340P' may be inclined relative to the upper surface of the first inorganic encapsulation layer 310. In an embodiment, the width of the upper region of the protruding pattern portion 340P' may be greater than the width of the lower region of the protruding pattern portion 340P'. The protruding pattern portion 340P' may have a cross-section having a shape in which the width decreases from the upper region to the lower region.

[0171] In one embodiment, the side surface of the protruding pattern portion 340P' may be further recessed from the upper region to the lower region. The anchor shape may be achieved at the corner where the side surface of the protruding pattern portion 340P' meets the upper surface of the recessed portion. For example, mechanical anchoring may be created between the pattern layer 340' and the first organic encapsulation layer 320.

[0172] Therefore, since the protruding pattern portion 340P' has a trapezoidal shape in the cross-sectional view, the display device 1 according to another embodiment can effectively improve the adhesive strength between the pattern layer 340' and the first organic encapsulation layer 320 through the anchoring effect. Thus, the protruding pattern portion 340P' can prevent delamination between the first inorganic encapsulation layer 310 and the first organic encapsulation layer 320 (or reduce the likelihood of such delamination, reduce the occurrence of such delamination, or reduce the degree of such delamination). In the display device 1 according to another embodiment, as... Figure 8 and Figure 9 As shown, a more robust structure can be formed by including a silane coupling agent in the patterned layer 340'.

[0173] Figure 10 and Figure 11 This is a flowchart illustrating a method for manufacturing a display device 1 according to an embodiment.

[0174] First, refer to Figure 10 The method for manufacturing display device 1 according to an embodiment may include the following steps: on a substrate 100 (see...) Figure 5 A display element layer DEL is formed on the surface (see...) Figure 5 (Operation S100); In the display element layer DEL (see...) Figure 5 A first inorganic encapsulation layer 310 is formed on the surface (see...). Figure 5 (Operation S200); in the first inorganic encapsulation layer 310 (see...) Figure 5 A pattern layer 340 is formed on the surface (see...) Figure 5 (Operation S300); In pattern layer 340 (see...) Figure 5 A first organic encapsulation layer 320 is formed on the surface (see...). Figure 5 (Operation S400); Perform UV curing process (Operation S500); Perform heat treatment process (Operation S600); In the first organic encapsulation layer 320 (see...) Figure 5 A second inorganic encapsulation layer 330 is formed on the surface (see...). Figure 5 (Operation S700); in the second inorganic encapsulation layer 330 (see...) Figure 5 A color conversion-transmission layer FNL is formed on the surface (see...). Figure 5 (Operation S800); and in the color conversion-transmission layer FNL (see Figure 5 A color filter layer CFL is formed on the surface (see) Figure 5(Operation S900).

[0175] First, as mentioned above, it can be done on substrate 100 (see Figure 5 A circuit layer PCL is formed on it (see) Figure 5 ) and display element layer DEL (see Figure 5 (Operation S100). This can be done in the display element layer DEL (see...) Figure 5 A TFE1 encapsulation layer is formed on the surface (see...). Figure 5 ).

[0176] First, you can do so in the display element layer DEL (see...) Figure 5 A first inorganic encapsulation layer 310 is formed on the surface (see...). Figure 5 (Operation S200). First inorganic encapsulation layer 310 (see...) Figure 5 The inorganic encapsulation layer 310 may include one or more inorganic materials selected from alumina, titanium oxide, tantalum oxide, hafnium oxide, zinc oxide, silicon oxide, silicon nitride, and silicon oxynitride. In an embodiment, the first inorganic encapsulation layer 310 (see...) Figure 5 The first inorganic encapsulation layer 310 can be an inorganic insulating layer with a relatively high oxygen content. It can be deposited by methods such as sputtering, atomic layer deposition, and / or chemical vapor deposition (see...). Figure 5 ).

[0177] It can be in the first inorganic encapsulation layer 310 (see Figure 5 A pattern layer 340 is formed on the surface (see...) Figure 5 (Operation S300). Refer to... Figure 11 The step of forming the patterned layer (operation S300) may include: blending a matrix resin with a silane coupling agent to form a patterned layer constituent material (operation S310). The matrix resin may be incorporated into the first organic encapsulation layer 320 (see...). Figure 5 The materials in the first inorganic encapsulation layer 310 are the same, and the silane coupling agent may include chemically bonded to the first inorganic encapsulation layer 310 (see...). Figure 5 The first end of the ) is chemically bonded to the first organic encapsulation layer 320 (see Figure 5 The second end of the matrix resin. By blending the matrix resin with the silane coupling agent, the silane coupling agent can be uniformly (e.g., substantially uniformly) dispersed in the matrix resin.

[0178] Subsequently, the step of forming the patterned layer (operation S300) may further include: applying the patterned layer constituent material to the first inorganic encapsulation layer 310 (see... Figure 5 (Operation S320). The patterned layer constituent material is applied to the first inorganic encapsulation layer 310 (see...). Figure 5 After that, a printing process can be performed to form multiple raised pattern portions 340P (see...). Figure 5 (Operation S330). On pattern layer 340 (see...) Figure 5Methods for forming a pattern on one side of the image can include laser interference lithography, electron beam lithography, and / or nanoimprint lithography.

[0179] Next, we can work on pattern layer 340 (see...) Figure 5 A first organic encapsulation layer 320 is formed on the surface (see...). Figure 5 (Operation S400). First organic encapsulation layer 320 (see...) Figure 5 The organic encapsulation layer 320 may include acrylic resins, epoxy resins, polyimides, and / or polyethylene, etc. It can be formed by methods such as inkjet printing, slot coating, screen printing, evaporation, and / or chemical vapor deposition (see...). Figure 5 ).

[0180] During the formation of the first organic encapsulation layer 320 (see...) Figure 5 After that, a UV curing process (operation S500) can be performed to irradiate UV light onto the display device 1. The light irradiated in the UV curing process can be UV light with a wavelength of approximately 350 nm to approximately 370 nm. The first organic encapsulation layer 320 (see [link to product description]) can be cured by the UV curing process. Figure 5 In this embodiment, the pattern layer 340 (see UV curing process) can be applied using a UV curing process. Figure 5 ) and the first organic encapsulation layer 320 (see Figure 5 A strong bond can be created between the elements. For example, this can be achieved by including the pattern layer 340 (see pattern layer 340). Figure 5 One end of the silane coupling agent in the first organic encapsulation layer 320 (see...) Figure 5 Hydrogen bonds or covalent bonds are formed between the materials in the process.

[0181] After performing the UV curing process, a heat treatment process (operation S600) can be performed. The heat treatment process can be performed at a temperature of approximately 80°C to approximately 90°C for approximately 10 minutes. The heat treatment process can be used to pattern layer 340 (see...) Figure 5 ) and the first inorganic encapsulation layer 310 (see Figure 5 A strong bond can be created between the elements. For example, this can be achieved by including the pattern layer 340 (see pattern layer 340). Figure 5 One end of the silane coupling agent in the first inorganic encapsulation layer 310 (see...) Figure 5 Covalent bonds are formed between the materials in the mixture.

[0182] After performing the heat treatment process, a second inorganic encapsulation layer 330 can be formed (see...). Figure 5 (Operation S700). Second inorganic encapsulation layer 330 (see...) Figure 5The inorganic encapsulation layer 330 may include one or more inorganic materials selected from alumina, titanium oxide, tantalum oxide, hafnium oxide, zinc oxide, silicon oxide, silicon nitride, and silicon oxynitride. The second inorganic encapsulation layer 330 (see [link to encapsulation layer]) may be deposited by methods such as sputtering, atomic layer deposition, and / or chemical vapor deposition. Figure 5 ).

[0183] Next, in the second inorganic encapsulation layer 330 (see...) Figure 5 A color conversion-transmission layer FNL is formed on the surface (see...). Figure 5 (Operation S800), and can be used in color conversion - transmission layer FNL (see Figure 5 A color filter layer CFL is formed on the surface (see) Figure 5 (Operation S900). Color conversion - Transmitter layer FNL (see...) Figure 5 The display element may include an optical layer that transmits light with or without converting the color of the light emitted by the display element. A color filter layer (CFL) (see...) Figure 5 It can improve the color purity of the light emitted from the display device 1.

[0184] The display device 1 according to the embodiments can be applied to various electronic devices (electronic devices). Electronic devices according to embodiments of this disclosure may include the above-described display device 1 (e.g., Figure 1 The display device 1 may include modules or devices with additional functions in addition to the display device 1.

[0185] Figure 12 This is a block diagram of an electronic device 1000 according to an embodiment.

[0186] Reference Figure 12 The electronic device 1000 according to the embodiment may include a display module 1001, a processor 1002, a memory 1003, and a power module 1004.

[0187] The processor 1002 may include at least one of a central processing unit (CPU), an application processor (AP), a graphics processing unit (GPU), a communication processor (CP), an image signal processor (ISP), and a controller.

[0188] The memory 1003 can store data information necessary for the operation of the processor 1002 or the display module 1001. When the processor 1002 executes the application stored in the memory 1003, image data signals and / or input control signals can be transmitted to the display module 1001, and the display module 1001 can process the received signals and output image information through the display screen.

[0189] The power module 1004 may include a power module such as a power adapter or battery device, and a power conversion module that converts the power supplied by the power module to generate the power necessary for the operation of the electronic device 1000.

[0190] At least one of the components of the above-described electronic device 1000 may be included in the display device 1 according to the above embodiment. Furthermore, a portion of the various modules functionally included in a single module may be included in the display device 1, while another portion may be separately disposed from the display device 1. For example, the display device 1 may include a display module 1001, and in addition to the display device 1, the processor 1002, memory 1003, and power module 1004 may be disposed as other devices within the electronic device 1000.

[0191] In an embodiment, the display module 1001 included in the display device 1 can be driven based on image data signals and input control signals received from the processor 1002.

[0192] Figure 13 These are schematic diagrams of electronic devices according to various embodiments.

[0193] Reference Figure 13 The various electronic devices that are applied to the display device 1 according to the embodiments may include not only image display electronic devices such as smartphones 1000a, tablet PCs 1000b, laptops 1000c, TVs 1000d and desktop monitors 1000e, but also wearable electronic devices that include display modules such as smart glasses 1000f, head-mounted displays 1000g and smartwatches 1000h, and vehicle electronic devices 1000i that include dashboards, central dashboards and display modules such as CID (central information display) and interior mirror displays installed in the dashboard.

[0194] According to the above embodiments, the adhesive strength of the encapsulation layer can be improved to provide a robust display device. The foregoing effects are exemplary, and the scope of disclosure is not limited to these effects.

[0195] It should be understood that the embodiments described herein should be considered descriptive only and not for limiting purposes. The description of features or aspects within each embodiment should generally be considered applicable to other similar features or aspects in other embodiments. While one or more embodiments have been described with reference to the accompanying drawings, it will be understood by those skilled in the art that various suitable changes in form and detail may be made therein without departing from the spirit and scope defined by the claims and their equivalents.

Claims

1. A display device, the display device comprising: Base; A display element layer is disposed on the substrate and includes a plurality of display elements; as well as An encapsulation layer is disposed on the display element layer, and includes a first inorganic encapsulation layer, an organic encapsulation layer disposed on the first inorganic encapsulation layer, and a pattern layer disposed between the first inorganic encapsulation layer and the organic encapsulation layer. The pattern layer includes a plurality of protruding pattern portions disposed on the upper surface of the pattern layer and protruding toward the organic encapsulation layer.

2. The display device according to claim 1, wherein, Each of the plurality of protruding pattern portions is disposed between adjacent display elements among the plurality of display elements.

3. The display device according to claim 2, wherein, The pattern layer also includes recessed portions corresponding to the plurality of display elements, and The protruding pattern portion and the recessed portion are repeatedly disposed on the upper surface of the pattern layer.

4. The display device according to claim 1, wherein, Each of the plurality of protruding pattern portions has a rectangular shape in the cross-sectional view.

5. The display device according to claim 1, wherein, Each of the plurality of protruding pattern portions has a trapezoidal shape in the cross-sectional view.

6. The display device according to claim 5, wherein, Each of the plurality of protruding pattern portions has a cross-section with its width decreasing from the upper region to the lower region.

7. The display device according to claim 1, wherein, The materials constituting the patterned layer include silane coupling agents.

8. The display device according to claim 7, wherein, Based on the total weight of the patterned layer, the patterned layer comprises 0.5 wt% to 6 wt% of the silane coupling agent.

9. The display device according to claim 7, wherein, The silane coupling agent includes a first end and a second end, the first end comprising an alkoxysilyl group, and the second end comprising an acryloyloxy group or a methacryloyloxy group.

10. The display device according to claim 1, wherein, The encapsulation layer further includes a second inorganic encapsulation layer disposed on the organic encapsulation layer.

11. The display device according to claim 1, further comprising: A color conversion-transmission layer is disposed on the encapsulation layer and is configured to convert light emitted from the plurality of display elements into light of different colors; as well as A color filter layer is disposed on the color conversion-transmission layer.

12. A method for manufacturing a display device, the method comprising: A display element layer comprising multiple display elements is formed on a substrate; A first inorganic encapsulation layer is formed on the display element layer; A patterned layer is formed on the first inorganic encapsulation layer; as well as An organic encapsulation layer is formed on the patterned layer. The pattern layer includes a plurality of protruding pattern portions disposed on the upper surface of the pattern layer and protruding toward the organic encapsulation layer.

13. The method according to claim 12, wherein, The steps for forming the patterned layer include: A patterned layer composition material is formed by blending a silane coupling agent with a matrix resin to uniformly disperse the silane coupling agent in the matrix resin; and The patterned layer material is applied to the first inorganic encapsulation layer.

14. The method according to claim 13, wherein, The step of forming the pattern layer further includes performing a printing process on the applied pattern layer constituent material to form the plurality of protruding pattern portions.

15. The method according to claim 12, further comprising: After the organic encapsulation layer is formed, a UV curing process is performed.

16. The method according to claim 15, further comprising: After performing the ultraviolet curing process, a heat treatment process is performed.

17. The method according to claim 16, wherein, The heat treatment process is performed at a temperature of 80°C to 90°C.

18. The method according to claim 12, further comprising: A second inorganic encapsulation layer is formed on the organic encapsulation layer.

19. The method according to claim 18, further comprising: A color conversion-transmission layer is formed on the second inorganic encapsulation layer, which converts the light emitted from the plurality of display elements into light of different colors. as well as A color filter layer is formed on the color conversion-transmission layer.

20. An electronic device, the electronic device comprising: Base; A display element layer is disposed on the substrate and includes a plurality of display elements; as well as An encapsulation layer is disposed on the display element layer, and includes a first inorganic encapsulation layer, an organic encapsulation layer disposed on the first inorganic encapsulation layer, and a pattern layer disposed between the first inorganic encapsulation layer and the organic encapsulation layer. The pattern layer includes a plurality of protruding pattern portions disposed on the upper surface of the pattern layer and protruding toward the organic encapsulation layer.

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