Laminated organic light-emitting device and application thereof
By using a stacked structure of triazine-based benzimidazole-based organic compounds and spirofluorene-based aromatic amine compounds in a stacked OLED device, combined with a diffusion barrier layer, the problems of short lifetime and poor stability caused by the migration of active metal ions are solved, and a high-efficiency, long-lifetime stacked OLED device is realized.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-09-27
- Publication Date
- 2026-03-27
AI Technical Summary
In existing multilayer OLED devices, active metal ions in the N-type doped layer migrate to the P-type layer under a high electric field, resulting in short device lifetime and poor stability.
Triazine-type benzimidazole organic compounds are used as N-type doping layers, spirofluorene-type aromatic amine compounds are used as P-type doping layers, and a diffusion barrier layer is introduced in the intermediate connecting layer to block the migration of active metal ions, forming a stacked structure of N-type doping layer, diffusion barrier layer and P-type doping layer.
This improves the stability and lifespan of multilayer organic electroluminescent devices, while reducing the driving voltage and increasing device efficiency.
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Abstract
Description
Technical Field
[0001] This invention belongs to the field of organic electroluminescence technology, and relates to a multilayer organic electroluminescent device and its application, particularly to a multilayer organic electroluminescent device containing triazine benzimidazole organic compounds and spirofluorene aromatic amine compounds and its application. Background Technology
[0002] Organic light-emitting diodes (OLEDs) technology possess unique advantages such as thinness, self-illumination, wide viewing angle, low power consumption, high efficiency, rich colors, fast response speed, wide operating temperature range, low driving voltage, the ability to fabricate flexible, bendable, and transparent display panels, and environmental friendliness, making its application prospects very broad. Generally, it consists of two opposing electrodes and at least one layer of organic light-emitting compound inserted between the two electrodes. Charge is injected into the organic layer formed between the anode and cathode to form electron-hole pairs, causing the organic compound with fluorescent or phosphorescent properties to emit light. Through the efforts of numerous researchers, the device efficiency of white organic light-emitting diodes (WOLEDs) has exceeded 100 lm / W, comparable to LEDs; however, its lifespan remains relatively low and urgently needs improvement.
[0003] To improve the lifespan of WOLEDs, researchers stacked multiple independent light-emitting units (LEDs), allowing the same current to flow sequentially through these units, resulting in simultaneous emission and increased brightness and efficiency—a process known as tandem OLEDs. Compared to single-unit devices, tandem structures often exhibit significantly higher current efficiency and brightness. When measured at the same current density, the lifespan of a tandem OLED device, converted to the initial brightness of a single-unit device, is greatly enhanced. In the design and fabrication of tandem devices, a functional layer is often designed at the junction of two or more independent LEDs. Under the high electric field generated by the driving voltage during operation, this functional layer generates electron-hole pairs, which are injected and recombine into the upper and lower units respectively, enabling both OLED units to emit light independently. This functional layer is called the charge generation layer (CGL). A well-designed CGL ensures that the energy consumption of the tandem OLED is concentrated in the LED layer and minimizes optical losses, resulting in a significant increase in brightness and efficiency. Its quality directly determines the efficiency and lifespan of the OLED device. Therefore, the development of the CGL layer is crucial for the advancement of tandem OLED devices. Currently, researchers have developed various CGL structures. Among these, the N-type doped / electron receiver / hole transport layer CGL has been a hot research topic due to its simple structure, high efficiency, strong transmittance, and refractive index matching. However, the n / p-type carrier generation layer uses an active metal material with a work function lower than 4 eV in the N-type doped layer. Under a high electric field, the active metal ions will ionize to the adjacent p-type layer, resulting in short lifetime and poor stability in most of these tandem OLED devices.
[0004] Therefore, it is particularly important to propose a high-efficiency, long-life, and stable multilayer organic electroluminescent device to address the technical problems existing in current multilayer OLED devices. Summary of the Invention
[0005] To address the shortcomings of existing technologies, the present invention aims to provide a multilayer organic electroluminescent device and its applications, particularly a multilayer organic electroluminescent device containing triazine organic compounds and spirofluorene aromatic amine compounds and its applications. The series-connected multilayer organic electroluminescent device provided by the present invention has advantages such as low driving voltage and long service life.
[0006] To achieve this objective, the present invention adopts the following technical solution:
[0007] In a first aspect, the present invention provides a stacked organic electroluminescent device, the stacked organic electroluminescent device comprising a substrate, a first electrode, a first light-emitting unit, an intermediate connecting layer (i.e., a charge generation layer (CGL) and a carrier generation layer CGL), a second light-emitting unit and a second electrode arranged in sequence.
[0008] The intermediate connecting layer includes an N-type doped layer, a diffusion barrier layer, and a P-type doped layer stacked sequentially.
[0009] The N-type doped layer includes an organic electron transport material, which has the structure shown in formula (A):
[0010]
[0011] In formula (A), Ar1 and Ar2 each independently represent substituted or unsubstituted C6-C30 (e.g., C8, C9, C10, C11, C12, C13, C14, C15, C16, C17, C18, C20, C22, C24, C26 or C28, etc.) aryl groups, or substituted or unsubstituted C2-C30 (e.g., C2, C3, C4, C5, C6, C7, C8, C9, C10, C11, C12, C13, C14, C15, C16, C17, C18, C20, C22, C24, C26 or C28, etc.) heteroaryl groups; that is, Ar1 and Ar2 can be the same or different.
[0012] When Ar1 and Ar2 contain substituents, each substituent is independently selected from deuterium, cyano, halogen, C1-C10 (e.g., C1, C2, C3, C4, C5, C6, C7, C8, C9, or C10) alkoxy, adamantyl, or straight-chain or branched C1-C10 (e.g., C1, C2, C3, C4, C5, C6, C7, C8, C9, or C10) alkyl groups. Any one of the following: C3-C20 (e.g., C4, C5, C6, C7, C8, C9, C10, C11, C12, C13, C14, C15, C16, C17, C18, etc.) cycloalkyl groups and C6-C30 (e.g., C8, C9, C10, C12, C14, C16, C18, C20, C22, C24, C26, C28, etc.) aryl groups;
[0013] The P-type doped layer includes an organic hole transport material, which has the structure shown in formula (B):
[0014]
[0015] In formula (B), Ar3 and Ar4 each independently represent substituted or unsubstituted C6-C30 (e.g., C8, C9, C10, C11, C12, C13, C14, C15, C16, C17, C18, C20, C22, C24, C26, or C28, etc.) aryl groups, and substituted or unsubstituted C2-C30 (e.g., C2, C3, C4, C5, C6, C7, C8, C9, C10, C11, C12, C13, C14, C15, C16, C17, C18, C20, C22, C24, C26, or C28, etc.) heteroaryl groups;
[0016] R1, R2, R3, and R4 each independently represent any one of the following: deuterium, cyano, halogen, straight-chain or branched C1-C10 (e.g., C1, C2, C3, C4, C5, C6, C7, C8, C9, or C10) alkyl, C1-C10 alkoxy, and C3-C20 (e.g., C4, C5, C6, C7, C8, C9, C10, C11, C12, C13, C14, C15, C16, C17, C18, etc.) cycloalkyl.
[0017] m1 is an integer from 0 to 3, for example, 0, 1, 2 or 3;
[0018] m2, m3, and m4 are each independent integers from 0 to 4, such as 0, 1, 2, 3, or 4;
[0019] When Ar3 and Ar4 contain substituents, each substituent is independently selected from deuterium, cyano, halogen, C1-C10 (e.g., C1, C2, C3, C4, C5, C6, C7, C8, C9, or C10) alkoxy, adamantyl, or straight-chain or branched C1-C10 (e.g., C1, C2, C3, C4, C5, C6, C7, C8, C9, or C10) alkyl groups. Any one of the following: C3-C20 (e.g., C4, C5, C6, C7, C8, C9, C10, C11, C12, C13, C14, C15, C16, C17, C18, etc.) cycloalkyl groups and C6-C30 (e.g., C8, C9, C10, C12, C14, C16, C18, C20, C22, C24, C26, C28, etc.) aryl groups.
[0020] The multilayer organic light-emitting device provided by this invention includes an intermediate connecting layer, which comprises an N-type doped layer, a diffusion barrier layer, and a P-type doped layer stacked sequentially. The N-type doped layer contains triazine-type benzimidazole organic compounds, and the P-type doped layer contains spirofluorene-type aromatic amine compounds. A diffusion barrier layer composed of a metal with a high work function is added between the P and N-type doped layers. The diffusion barrier layer is located between the N-type doped layer and the P-type doped layer of the intermediate connecting layer and serves to prevent active metal ions in the N-type doped layer from ionizing into the P-type doped layer, thereby preventing device performance degradation, improving the stability of the multilayer organic light-emitting device, and significantly increasing the device's lifetime.
[0021] In this invention, the heteroatoms in the heteroaryl group are independently selected from N, O, or S.
[0022] Preferably, Ar1 and Ar2 are each independently selected from any one of the following groups:
[0023]
[0024] Among them, R 11 R 12 Each is independently selected from any one of deuterium, cyano, halogen, C1-C10 (e.g., C1, C2, C3, C4, C5, C6, C7, C8, C9 or C10) alkoxy, straight-chain or branched C1-C10 (e.g., C1, C2, C3, C4, C5, C6, C7, C8, C9 or C10) alkyl, C6-C30 (e.g., C8, C9, C10, C12, C14, C16, C18, C20, C22, C24, C26, C28, etc.) aryl.
[0025] Preferably, Ar1 and Ar2 are each independently selected from any one of the following groups:
[0026]
[0027] Preferably, the organic electron transport material represented by formula (A) is selected from any one of the following compounds:
[0028]
[0029]
[0030] Preferably, the thickness of the N-type doped layer is 1-200 nm, such as 1 nm, 2 nm, 3 nm, 4 nm, 5 nm, 6 nm, 7 nm, 8 nm, 9 nm, 10 nm, 20 nm, 30 nm, 40 nm, 50 nm, 60 nm, 70 nm, 80 nm, 90 nm, 100 nm, 110 nm, 120 nm, 130 nm, 140 nm, 150 nm, 160 nm, 170 nm, 180 nm, 190 nm, 200 nm, etc.
[0031] Preferably, the N-type doped layer further includes a low work function metal and / or a compound of a low work function metal.
[0032] Preferably, the N-type doped layer is formed by doping a low work function metal and / or a compound of a low work function metal in an organic electron transport material with the structure shown in Formula (A).
[0033] Preferably, the doping ratio of the low work function metal and / or the low work function metal compound, and the organic electron transport material with the structure shown in formula (A), is 0.1 to 50 wt%, for example, 0.1 wt%, 0.3 wt%, 0.5 wt%, 0.8 wt%, 1 wt%, 2 wt%, 3 wt%, 4 wt%, 5 wt%, 6 wt%, 7 wt%, 8 wt%, 9 wt%, 10 wt%, 15 wt%, 20 wt%, 25 wt%, 30 wt%, 35 wt%, 40 wt%, 45 wt%, 50 wt%, etc., preferably 1-10 wt%, based on the total weight of the low work function metal and / or the low work function metal compound and the organic electron transport material with the structure shown in formula (A) as 100%.
[0034] Preferably, the low work function metal includes any one or a combination of at least two of Li, K, Rb, Cs, or Mg.
[0035] Preferably, the diffusion barrier layer comprises a chemically stable metallic material with a high work function greater than 4 eV.
[0036] Preferably, the high work function metallic material with a work function greater than 4 eV includes Ag and / or Al.
[0037] Preferably, Ar3 and Ar4 are each independently selected from any one of the following groups:
[0038]
[0039] Among them, R 21 R 22Each is independently selected from any one of deuterium, cyano, halogen, C1-C10 (e.g., C1, C2, C3, C4, C5, C6, C7, C8, C9 or C10) alkoxy, straight-chain or branched C1-C10 (e.g., C1, C2, C3, C4, C5, C6, C7, C8, C9 or C10) alkyl groups;
[0040] p and q each independently represent integers from 0 to 4, such as 0, 1, 2, 3 or 4;
[0041] X represents S or O; R 23 R 24 Each is independently selected from any one of straight-chain or branched C1-C10 (e.g., C1, C2, C3, C4, C5, C6, C7, C8, C9, or C10) alkyl or C6-C30 (e.g., C8, C9, C10, C12, C14, C16, C18, C20, C22, C24, C26, C28, etc.) aryl groups, R 23 R 24 Not connected or connected in a loop.
[0042] Preferably, Ar3 and Ar4 are each independently selected from any one of the following groups:
[0043]
[0044] Preferably, R1, R2, R3, and R4 each independently represent any one of deuterium, cyano, halogen, methyl, ethyl, propyl, and tert-butyl.
[0045] Preferably, the organic hole transport material represented by formula (B) is selected from any one of the following compounds:
[0046]
[0047] Preferably, the P-type doped layer further includes a second organic electron transport material.
[0048] Preferably, the P-type doped layer is formed by doping a second organic electron transport material into an organic hole transport material with the structure shown in formula (B).
[0049] Preferably, the second organic electron transport material comprises any one or a combination of at least two of 4,7-diphenyl-1,10-phenanthroline (Bphen), bis(10-hydroxybenzo[h]quinoline) beryllium (Bebq2), HATCN, or methylcyclopentenolone (MCP).
[0050] Preferably, based on the total weight of the second organic electron transport material and the organic hole transport material with the structure shown in Formula (B) as 100%, the doping ratio of the second organic electron transport material is 0.1 to 50 wt%, for example, 0.1 wt%, 0.3 wt%, 0.5 wt%, 0.8 wt%, 1 wt%, 2 wt%, 3 wt%, 4 wt%, 5 wt%, 6 wt%, 7 wt%, 8 wt%, 9 wt%, 10 wt%, 15 wt%, 20 wt%, 25 wt%, 30 wt%, 35 wt%, 40 wt%, 45 wt%, 50 wt%, etc., preferably 1-10 wt%.
[0051] Preferably, the first electrode and the second electrode are each independently a transparent electrode, a semi-transparent electrode, or an opaque electrode, including any one of ITO, IZO, AZO, Ag, Mo, Al, or AU, and the first electrode and the second electrode cannot be opaque electrodes at the same time.
[0052] Preferably, the first light-emitting unit and the second light-emitting unit each independently include any one or a combination of at least two of the following: hole injection layer (HIL), hole transport layer (HTL), organic light-emitting layer (EML), electron transport layer (ETL), or electron injection layer (EIL), and each includes at least one organic light-emitting layer.
[0053] Preferably, the number of layers of the light-emitting unit (including the first light-emitting unit and the second light-emitting unit) is ≥2, for example, 2, 3, 4, 5, etc.
[0054] Preferably, the thickness of the first light-emitting unit and the second light-emitting unit is independently 0.05-200nm, for example 0.05nm, 0.08nm, 0.1nm, 0.5nm, 1nm, 3nm, 5nm, 8nm, 10nm, 20nm, 30nm, 40nm, 50nm, 60nm, 70nm, 80nm, 90nm, 100nm, 110nm, 120nm, 130nm, 140nm, 150nm, 160nm, 170nm, 180nm, 190nm, 200nm, etc.
[0055] It should be noted that the present invention does not limit the preparation method of the organic electron transport material shown in formula (A) and the organic hole transport material shown in formula (B), which can be prepared according to conventional methods in the prior art.
[0056] In a second aspect, the present invention provides a display device comprising a stacked organic electroluminescent device as described in the first aspect.
[0057] Compared with the prior art, the present invention has at least the following beneficial effects:
[0058] (1) The stacked organic electroluminescent device provided by the present invention has a diffusion barrier layer located between the N-type doped layer and the P-type doped layer material of the intermediate connecting layer. It plays a role in blocking the active metal ions in the N-type doped layer from ionizing to the P-type doped layer, so as to prevent the device performance from deteriorating, thereby improving the stability of the series stacked organic electroluminescent device and increasing the device lifespan.
[0059] (2) By limiting the structure of the hole transport material in the P-type doped layer, the present invention can change the electron carrier mobility transported from the P-type doped layer to the N-type doped layer, thereby increasing the carrier mobility and concentration, thus reducing the device driving voltage and reducing device power consumption.
[0060] (3) The present invention uses organic electron transport materials with specific N-type doped layers to adjust the carrier balance inside the device, thereby improving the efficiency of the device. Detailed Implementation
[0061] The technical solution of the present invention will be further illustrated below through specific embodiments. Those skilled in the art should understand that the embodiments described are merely illustrative of the present invention and should not be construed as limiting the invention in any way.
[0062] It should be noted that, unless otherwise specified, the embodiments and features described in the present invention can be combined with each other.
[0063] Comparative Example 1
[0064] In this comparative example, a stacked organic electroluminescent device is provided, which includes, from bottom to top, a substrate, a first electrode, a first light-emitting unit, an intermediate connecting layer, a second light-emitting unit, and a second electrode stacked sequentially.
[0065] The preparation method includes the following steps:
[0066] S1. Clean the ITO anode layer on the transparent glass substrate by ultrasonic cleaning with deionized water, acetone and ethanol for 15 minutes each, and then treat it in a plasma cleaner for 2 minutes.
[0067] S2. A 200 nm thick HAT-CN (3%) layer is deposited on the substrate, which serves as the first hole injection layer.
[0068] S3. Deposit an NPB layer with a thickness of 50 nm on the first hole injection layer. This layer serves as the first hole transport layer.
[0069] S4. A TCTA layer with a thickness of 5 nm is deposited on the first hole transport layer, which serves as the first electron blocking layer.
[0070] S5. A first light-emitting layer with a thickness of 40 nm is deposited on the first electron blocking layer; CBP is used as the host material, and Ir(ppy)2acac is used as the phosphorescent dopant with a doping concentration of 6%.
[0071] S6. On the first light-emitting layer, a TPBi / LiF (1%) layer with a thickness of 35 nm is deposited by vacuum evaporation. This layer serves as the first electron transport layer.
[0072] S7. An intermediate connection layer is prepared on the first electron transport layer by vacuum evaporation. The intermediate connection layer includes an N-type doped layer, a diffusion barrier layer, and a P-type doped layer stacked sequentially.
[0073] The material of the S8 and N-type doped layers is TPBI:Mg (40nm, Mg doping ratio is 6wt.%).
[0074] S9. The diffusion barrier layer is a chemically stable metal material with a work function greater than 4eV, Ag: 10nm;
[0075] The material of the S10 and P-type doped layers is NPB:HATCN (40nm, HATCN doping ratio is 6wt.%).
[0076] S11. An NPB layer with a thickness of 50 nm is deposited on the P-type doped layer, which serves as the second hole transport layer.
[0077] S12. A 5nm thick TCTA layer is deposited on the second hole transport layer, which serves as the second electron blocking layer.
[0078] S13. A second light-emitting layer with a thickness of 40 nm is deposited on the second electron blocking layer; CBP is used as the host material, and Ir(ppy)2acac is used as the phosphorescent dopant with a doping concentration of 6%.
[0079] S14. On the second light-emitting layer, a TPBi / LiF (1%) layer with a thickness of 35 nm is deposited by vacuum evaporation. This layer serves as the second electron transport layer.
[0080] S15. On the second electron transport layer, an Al layer with a thickness of 80 nm is deposited by vacuum evaporation as the second electrode.
[0081] Examples 1-15
[0082] The only difference between Examples 1-15 and Comparative Example 1 is that the materials of the N-type doped layer and the P-type doped layer are different, as shown in Table 1.
[0083] In the above embodiments and comparative examples, the structural formulas corresponding to the abbreviations of the materials are as follows:
[0084]
[0085] The multilayer organic electroluminescent devices provided in the embodiments and comparative examples were tested using the following methods:
[0086] (1) Current efficiency: all are above 10 mA / cm 2 Measured under the conditions;
[0087] (2) Lifetime test: The system is Chroma's MODEL 58131 OLED device lifetime tester. All tests were conducted on LT90 lifetime decay at a brightness of 5000 nits.
[0088] The test results are shown in Table 1.
[0089] Table 1
[0090]
[0091]
[0092] As can be seen from Table 1, compared with the comparative example, the stacked organic electroluminescent device provided in this application embodiment has significantly higher current efficiency and significantly longer lifetime.
[0093] The applicant declares that the present invention is illustrated by the above embodiments to demonstrate the multilayer organic electroluminescent device and its application, but the present invention is not limited to the above embodiments, that is, it does not mean that the present invention must rely on the above embodiments to be implemented. Those skilled in the art should understand that any improvements to the present invention, equivalent substitutions of the raw materials of the product of the present invention, addition of auxiliary components, selection of specific methods, etc., all fall within the protection scope and disclosure scope of the present invention.
Claims
1. A stacked organic electroluminescent device, characterized by comprising: The stacked organic electroluminescence device comprises a substrate, a first electrode, a first light-emitting unit, an intermediate connecting layer, a second light-emitting unit and a second electrode which are sequentially stacked; The intermediate connecting layer comprises an N-type doped layer, a diffusion barrier layer and a P-type doped layer which are sequentially stacked; The N-type doped layer comprises an organic electron transport material having the following structure shown in formula (A): In formula (A), Ar1 and Ar2 each independently represent a substituted or unsubstituted C6-C30 aryl group or a substituted or unsubstituted C2-C30 heteroaryl group; When the Ar1 and Ar2 contain a substituent, the substituent each independently is selected from any one of deuterium, a cyano group, a halogen, a C1-C10 alkoxy group, an adamantyl group, a linear or branched C1-C10 alkyl group, a C3-C20 cycloalkyl group and a C6-C30 aryl group; The P-type doped layer comprises an organic hole transport material having the following structure shown in formula (B): In formula (B), Ar3 and Ar4 each independently represent a substituted or unsubstituted C6-C30 aryl group or a substituted or unsubstituted C2-C30 heteroaryl group; R1, R2, R3 and R4 each independently represent any one of deuterium, a cyano group, a halogen, a linear or branched C1-C10 alkyl group, a C1-C10 alkoxy group and a C3-C20 cycloalkyl group; m1 is an integer from 0 to 3; m2, m3 and m4 each independently are an integer from 0 to 4; When the Ar3 and Ar4 contain a substituent, the substituent each independently is selected from any one of deuterium, a cyano group, a halogen, a C1-C10 alkoxy group, an adamantyl group, a linear or branched C1-C10 alkyl group, a C3-C20 cycloalkyl group and a C6-C30 aryl group.
2. The stacked organic electroluminescent device according to claim 1, wherein The Ar1 and Ar2 each independently are selected from any one of the following groups: wherein R 11 , R 12 each independently is selected from any one of deuterium, cyano, halogen, C1-C10alkoxy, linear or branched C1-C10alkyl, C6-C30aryl; Preferably, the Ar1 and Ar2 each independently are selected from any one of the following groups:
3. The stacked organic electroluminescence device according to claim 1 or 2, wherein The organic electron transport material shown in formula (A) is selected from any one of the following compounds:
4. The stacked organic electroluminescence device according to any one of claims 1 to 3, wherein The thickness of the N-type doped layer is 1-200 nm; Preferably, the N-type doped layer further comprises a low work function metal and / or a compound of a low work function metal; Preferably, the N-type doped layer is formed by doping the organic electron transport material having the structure shown in formula (A) with a low work function metal and / or a compound of a low work function metal; Preferably, the doping proportion of the low work function metal and / or the compound of a low work function metal is 0.1-50 wt%, preferably 1-10 wt%, based on the total weight of the low work function metal and / or the compound of a low work function metal and the organic electron transport material having the structure shown in formula (A) being 100%; Preferably, the low work function metal comprises any one or a combination of at least two of Li, K, Rb, Cs and Mg.
5. The stacked organic electroluminescent device according to any one of claims 1 to 4, wherein The diffusion barrier layer comprises a high work function metal material having a work function greater than 4 eV; Preferably, the high work function metal material having a work function greater than 4 eV comprises Ag and / or Al.
6. The stacked organic electroluminescent device according to any one of claims 1 to 5, wherein The Ar3 and Ar4 each independently are selected from any one of the following groups: wherein R 21 , R 22 each independently is selected from any one of deuterium, cyano, halogen, C1-C10alkoxy, linear or branched C1-C10alkyl; p, q each independently represents an integer from 0 to 4; X represents S or O; R 23 , R 24 each independently selected from any one of linear or branched C1-C10 alkyl, C6-C30 aryl, R 23 , R 24 is not connected or is connected to form a ring; Preferably, Ar3, Ar4 each independently is selected from any one of the following groups:
7. The stacked organic electroluminescent device according to any one of claims 1 to 6, wherein R1, R2, R3, R4 each independently represents any one of deuterium, cyano, halogen, methyl, ethyl, propyl, t-butyl.
8. The stacked organic electroluminescent device according to any one of claims 1 to 7, wherein The organic hole transport material shown in the formula (B) is selected from any one of the following compounds:
9. The stacked organic electroluminescent device according to any one of claims 1 to 8, wherein The P-type doped layer further comprises a second organic electron transport material; Preferably, the P-type doped layer is formed by doping the second organic electron transport material in the organic hole transport material shown in the structure of formula (B); Preferably, the second organic electron transport material comprises any one or a combination of at least two of 4,7-diphenyl-1,10-phenanthroline, bis(10-hydroxybenzo[h]quinoline)beryllium, HATCN or methylcyclopentenolone; Preferably, the doping proportion of the second organic electron transport material is 0.1-50wt%, preferably 1-10wt%, based on the total weight of the second organic electron transport material and the organic hole transport material shown in the structure of formula (B) being 100%; Preferably, the first electrode and the second electrode each independently is a transparent electrode, a semi-transparent electrode or an opaque electrode, comprising any one of ITO, IZO, AZO, Ag, Mo, Al or AU, and the first electrode and the second electrode cannot be opaque electrodes at the same time; Preferably, the first light-emitting unit and the second light-emitting unit each independently comprises any one or a combination of at least two of a hole injection layer, a hole transport layer, an organic light-emitting layer, an electron transport layer or an electron injection layer, and each contains at least one organic light-emitting layer; Preferably, the number of layers of the light-emitting unit is ≥2; Preferably, the thickness of the first light-emitting unit and the second light-emitting unit each independently is 0.05-200nm.
10. A display device, characterized by comprising: The display device comprises the laminated organic electroluminescent device according to any one of claims 1-9.