Display panel and electronic device including the same

Abstract

The invention relates to a display panel and an electronic device including the same. The display panel includes: a substrate including an upper surface and a lower surface, and defining an opening passing through the upper surface and the lower surface; an inorganic insulating structure including an inorganic insulating layer over an upper surface of the substrate; a light emitting diode over an upper surface of the inorganic insulating structure and defining a display area surrounding the opening in a plan view; an encapsulation layer over the light emitting diode and including an inorganic encapsulation layer and an organic encapsulation layer; a trench in the non-display area between the opening of the substrate and the display area, and concavely defined to have a step difference with respect to an upper surface of the inorganic insulating structure; an insulating layer covering the step difference; and a metal layer over the insulating layer and including a first overhang portion protruding toward the trench than a side surface of the insulating layer.

Description

[0001] Cross-reference with related applications

[0002] This application claims priority and benefit to Korean Patent Application No. 10-2024-0131093, filed with the Korean Intellectual Property Office on September 26, 2024, the entire disclosure of which is incorporated herein by reference. Technical Field

[0003] One or more embodiments relate to a display panel having an opening area in the display area and an electronic device including the display panel. Background Technology

[0004] Recently, the uses of display devices have become more diversified. Furthermore, as display devices become thinner and lighter, their applications are expanding.

[0005] Furthermore, as the area occupied by the display region in a display device has been increased, various functions have been added in combination with or associated with the display device. As an alternative to adding various functions while increasing the area, display devices in which various components can be located in the display region have been studied. Summary of the Invention

[0006] One or more embodiments provide a display panel having an opening area in the display area where various types of components can be located, and an electronic device including the display panel. However, such technical objectives are merely illustrative, and this disclosure is not limited thereto.

[0007] Additional aspects will be set forth in part in the description which follows, and will be apparent in part from the description, or may be learned by practice of the embodiments presented in this disclosure.

[0008] According to one or more embodiments, a display panel includes: a substrate including an upper surface and a lower surface opposite to the upper surface, and defining an opening through the upper and lower surfaces; an inorganic insulating structure including an inorganic insulating layer above the upper surface of the substrate; a light-emitting diode above the upper surface of the inorganic insulating structure, and defining a display area surrounding the opening in a plan view; an encapsulation layer above the light-emitting diode, and including an inorganic encapsulation layer and an organic encapsulation layer; a trench in a non-display area between the opening of the substrate and the display area, and recessedly defined to have a step difference relative to the upper surface of the inorganic insulating structure; an insulating layer covering the step difference; and a metal layer above the insulating layer, and including a first overhang portion protruding toward the trench from a side surface of the insulating layer.

[0009] The insulating layer may include organic insulating materials.

[0010] One of the light-emitting diodes may include a pixel electrode, a counter electrode above the pixel electrode, and an intermediate layer between the pixel electrode and the counter electrode, wherein the intermediate layer includes at least one organic material layer comprising a first portion on a first overhang portion and a second portion at the bottom of a trench and separated from the first portion by the first overhang portion.

[0011] The display panel may further include a protective layer above the first overhang portion.

[0012] The display panel may further include: a protective material layer, in the trench, separated from the protective layer and comprising the same material as the protective layer, wherein the side surface of the insulating layer is inclined relative to the bottom of the trench, and wherein the protective material layer is in direct contact with the side surface of the insulating layer.

[0013] The protective layer may include conductive materials.

[0014] The upper surface of the first overhanging portion can be substantially parallel to the substrate or inclined downwards.

[0015] The display panel may further include: a partition wall in the non-display area, an opening around the substrate in the plan view, and between the trench and the display area.

[0016] The display panel may further include: a first layer, between the trench and the display area, comprising the same material as the insulating layer, and defining a recess in the first layer; and a pair of second layers, above the first layer, comprising the same material as the metal layer, and including overhanging portions projecting toward the recess from a point where the lower surface of one of the second layers intersects the inner surface of the portion defining the recess in the first layer.

[0017] According to one or more embodiments, an electronic device includes: a display panel; and a component below the display panel and overlapping an opening region. The display panel may include: the opening region; a display region surrounding the opening region in a plan view; a substrate including an upper surface and a lower surface opposite to the upper surface, and defining an opening through the upper and lower surfaces and corresponding to the opening region; an inorganic insulating structure including an inorganic insulating layer above the upper surface of the substrate; a light-emitting diode (LED) above the upper surface of the inorganic insulating structure and defining the display region; an encapsulation layer above the LED and including an inorganic encapsulation layer and an organic encapsulation layer; a trench in a non-display region between the opening of the substrate and the display region, and recessedly defined to have a step difference relative to the upper surface of the inorganic insulating structure; an insulating layer covering the step difference; and a metal layer above the insulating layer, including a first overhang portion projecting toward the trench from a side surface of the insulating layer.

[0018] The insulating layer may include organic insulating materials.

[0019] One of the light-emitting diodes may include a pixel electrode, a counter electrode above the pixel electrode, and an intermediate layer between the pixel electrode and the counter electrode, wherein the intermediate layer includes at least one organic material layer comprising a first portion on a first overhang portion and a second portion at the bottom of a trench and separated from the first portion by the first overhang portion.

[0020] The display panel may further include a protective layer above the first overhang portion.

[0021] The display panel may further include: a protective material layer, in the trench, separated from the protective layer and comprising the same material as the protective layer, wherein the side surface of the insulating layer is inclined relative to the bottom of the trench, and wherein the protective material layer is in direct contact with the side surface of the insulating layer.

[0022] The protective layer may include conductive materials.

[0023] The upper surface of the first overhanging portion can be substantially parallel to the substrate or can be tilted downwards.

[0024] The display panel may further include: a partition wall in the non-display area, an opening around the substrate in the plan view, and between the trench and the display area.

[0025] The display panel may further include: a first layer between the groove and the display area, and defining a recess in the first layer; and a pair of second layers above the first layer, and including a hanging portion projecting toward the recess from a point where the lower surface of one of the second layers intersects with the inner surface of the portion of the first layer defining the recess.

[0026] The first layer may be made of the same material as the insulating layer, and the second layer may be made of the same material as the metal layer.

[0027] Components may include cameras or sensors. Attached Figure Description

[0028] The above and other aspects of embodiments of the present disclosure will become more apparent from the following description taken in conjunction with the accompanying drawings, in which:

[0029] Figure 1 It is a schematic perspective view of an electronic device according to one or more embodiments;

[0030] Figure 2 According to one or more embodiments along Figure 1 A schematic cross-sectional view of the electronic device taken by line I-I';

[0031] Figure 3 It is a schematic plan view of a display panel according to one or more embodiments;

[0032] Figure 4A It is a schematic equivalent circuit diagram of a light-emitting diode and a pixel circuit connected to the light-emitting diode according to one or more embodiments;

[0033] Figure 4B It is a schematic equivalent circuit diagram of a light-emitting diode and a pixel circuit electrically connected to the light-emitting diode according to one or more embodiments;

[0034] Figure 5 It is a plan view of a portion of a display panel according to one or more embodiments;

[0035] Figure 6 The edge of the display panel according to one or more embodiments Figure 5 A cross-sectional view taken from line VI-VI';

[0036] Figure 7 The edge of the display panel according to one or more embodiments Figure 5 A cross-sectional view taken from line VII-VII';

[0037] Figure 8 It is a cross-sectional view of a portion of a display panel according to one or more embodiments;

[0038] Figure 9 It can correspond to Figure 7 An enlarged view of area VIII, or a cross-sectional view of a portion of the display panel according to one or more other embodiments;

[0039] Figure 10A It is shown Figure 8 An enlarged view of area XA, or a cross-sectional view of a portion of a display panel according to one or more embodiments;

[0040] Figure 10B It corresponds to and Figure 10A A cross-sectional view of a portion of a display panel according to one or more other embodiments, corresponding to one or more modified embodiments;

[0041] Figure 11 It is shown Figure 7 An enlarged view of area XI, or a cross-sectional view of a portion of a display panel according to one or more embodiments;

[0042] Figure 12 This is a cross-sectional view of a portion of a display panel according to one or more other embodiments;

[0043] Figure 13 It is shown Figure 7 An enlarged view of area XIII, or a cross-sectional view of a portion of a display panel according to one or more embodiments;

[0044] Figure 14 It is a cross-sectional view of a portion of a display panel according to one or more other embodiments; and

[0045] Figures 15A to 15G It is a cross-sectional view of the internal non-display area in the process of manufacturing a display panel according to one or more embodiments. Detailed Implementation

[0046] From the detailed description and accompanying drawings of the embodiments, aspects of some embodiments of this disclosure and methods of implementing them can be more readily understood. The described embodiments are provided as examples so that this disclosure will be thorough and complete, and will fully convey aspects of this disclosure to those skilled in the art. Therefore, redundant processes, elements, and techniques that are irrelevant or unrelated to the description of the embodiments or unnecessary for those skilled in the art to fully understand aspects of this disclosure may be omitted. Unless otherwise stated, throughout the drawings and written description, the same reference numerals, characters, or combinations thereof refer to the same elements, and therefore their repeated descriptions may be omitted.

[0047] The described embodiments may have various modifications and may be embodied in different forms, and should not be construed as being limited to the embodiments illustrated herein. The terms "may," "may," or "may not" are used in the description of embodiments to correspond to one or more embodiments of this disclosure.

[0048] In view of the entire contents of this disclosure, those skilled in the art will understand that each suitable feature of the various embodiments of this disclosure may be combined in part or in whole or in combination with each other, and may be technically interlocked and operated in various suitable ways, and each embodiment may be implemented independently of each other or in combination with each other in any suitable way, unless otherwise stated or implied.

[0049] In the accompanying drawings, the relative dimensions of elements, layers, and regions may be exaggerated for clarity and / or descriptive purposes. In other words, this disclosure is not limited thereto because the dimensions and thicknesses of elements in the drawings are arbitrarily illustrated for ease of description. Furthermore, the use of crosshairs and / or shading in the drawings is generally provided to clarify boundaries between adjacent elements. Therefore, unless otherwise specified, the presence or absence of crosshairs or shading does not convey or indicate any preference or requirement for the specific material, material properties, dimensions, scale, commonalities between illustrated elements, and / or any other characteristics, properties, or nature of the elements.

[0050] In this document, various embodiments are described with reference to cross-sectional views that are schematic illustrations of the embodiments and / or intermediate structures. Thus, variations in the shape of the illustrations should be expected due to, for example, manufacturing techniques and / or tolerances. Furthermore, the specific structural or functional descriptions disclosed herein are merely illustrative for the purpose of describing embodiments according to the concept of this disclosure. Therefore, the embodiments disclosed herein should not be construed as limited to the illustrated shapes of elements, layers, or regions, but should include deviations in shape due to, for example, manufacturing processes.

[0051] For example, an injection zone illustrated as rectangular will typically have rounded or curved features at its edges and / or a gradient of injection concentration, rather than a binary change from the injection zone to the non-injection zone. Similarly, a buried zone formed by injection can result in some injection in the area between the buried zone and the surface through which the injection occurs.

[0052] For ease of explanation, spatial relative terms such as “below,” “under,” “lower,” “below,” “below,” “above,” “above,” “higher,” “upper side,” and “side” (e.g., as in “sidewall”) are used herein to describe the relationship between one element or feature as illustrated in the accompanying drawings and another element(s). It will be understood that, in addition to the orientations depicted in the drawings, the spatial relative terms are intended to cover different orientations of the device in use or operation. For example, if the device in the drawings is flipped, an element described as “below,” “under,” or “below” other elements or features will be oriented as “above” other elements or features. Thus, the example terms “below” and “below” can cover both upper and lower orientations. The device may be oriented in other ways (e.g., rotated 90 degrees or oriented in other orientations), and the spatial relative descriptive terms used herein should be interpreted accordingly. Similarly, when a first part is described as being arranged “on” a second part, this indicates that the first part is arranged on the upper or lower side of the second part, and not limited to the upper side of the second part based on the direction of gravity.

[0053] Furthermore, the phrase "in a plan view" means when viewing a portion of the object from above, and the phrase "in a schematic cross-sectional view" means when viewing a schematic cross-section taken by vertically cutting the portion of the object from the side. The terms "overlapping" or "overlapping" mean that the first object may be above, below, or to the side of the second object, and vice versa. Additionally, the term "overlapping" can include stacking, facing or confronting, extending over, covering or partially covering, or any other suitable terms as would be understood and appreciated by one of ordinary skill in the art. The expression "non-overlapping" can include meanings such as "separated from," "leaving out from," or "offset from," and any other suitable equivalents as would be understood and appreciated by one of ordinary skill in the art. The terms "facing" and "confronting" can mean that the first object may be directly or indirectly opposite the second object. In the case where a third object is located between the first and second objects, the first and second objects can be understood as being indirectly opposite each other, although still facing each other.

[0054] It will be understood that when a component, layer, area, or part (e.g., device, equipment, circuit, wiring, electrode, terminal, conductive film, etc.) is referred to as being "formed" on, "on" another component, layer, area, or part, "connected to," or "(operably or communicatively) coupled to" another component, layer, area, or part), that component, layer, area, or part may be directly formed on, on, connected to, or coupled to that other component, layer, area, or part, or indirectly formed on, on, or on that other component, layer, area, or part, or indirectly connected to or coupled to that other component, layer, area, or part, such that one or more intermediate components, layers, areas, or parts may exist. Furthermore, this can be collectively referred to as direct or indirect coupling or connection, and integral or non-integral coupling or connection. For example, when a layer, area, or component is referred to as "electrically connected" or "electrically coupled" to another layer, area, or component, that layer, area, or component may be directly electrically connected or coupled to that other layer, area, or component, or there may be one or more intervening layers, areas, or components. One or more intervening components may include switches, transistors, resistors, inductors, capacitors, and / or diodes, etc. Therefore, the connection is not limited to the connections illustrated in the drawings or described in detail, and may also include other types of connections. In describing embodiments, unless explicitly described as a direct connection, the expression for connection indicates an electrical connection, and "direct connection / direct coupling" or "directly on" means that one component is directly connected or coupled to another component or is directly on another component without any intervening components.

[0055] Furthermore, in this specification, when a portion of a layer, film, region, or plate is formed on another portion, the forming direction is not limited to the upward direction, but also includes forming the portion on a side surface or in a downward direction. Conversely, when a portion of a layer, film, region, or plate is formed "below" another portion, this includes not only the case where the portion is "directly" "below" the other portion, but also the case where there is another portion further between the portion and the other portion. Similarly, other expressions describing the relationship between components, such as "between" and "directly between," or "adjacent to" and "directly adjacent to," can be interpreted similarly. It will be understood that when an element or layer is referred to as being "between" two elements or layers, the element or layer may be the only element or layer between the two elements or layers, or there may be one or more intervening elements or layers.

[0056] For the purposes of this disclosure, when following a list of elements, expressions such as “at least one of…”, “any one of…”, or “one or more of…” modify the entire list of elements without modifying any individual element of the list. For example, “at least one of X, Y, and Z” and “at least one selected from the group consisting of X, Y, and Z” can be interpreted as any combination of only X, only Y, only Z, two or more of X, Y, and Z (such as, for example, XYZ, XY, YZ, and XZ) or any variations thereof. Similarly, the expression “at least one of A and B” can include A, B, or A and B. As used herein, “or” generally means “and / or”, and the term “and / or” includes any and all combinations of one or more of the listed items. For example, the expression “A and / or B” can include A, B, or A and B. Similarly, when following or preceding a list of elements, expressions such as “at least one of…”, “a plurality of,” “one of…”, and other prepositional phrases modify the entire list of elements without modifying any individual element of the list. When “C to D” is stated, it means above C and below D, unless otherwise specified.

[0057] It will be understood that although the terms “first,” “second,” “third,” etc., may be used herein to describe various elements, components, areas, layers, and / or parts, these elements, components, areas, layers, and / or parts should not be limited by these terms. These terms do not correspond to a specific order, position, or superiority, and are used only to distinguish one element, component, area, region, layer, part, or section from another. Therefore, the first element, component, area, layer, or part described below may be referred to as the second element, component, area, layer, or part without departing from the spirit and scope of this disclosure. Describing an element as a “first” element does not require or imply the existence of a second element or other elements. The terms “first,” “second,” etc., may also be used herein to distinguish different categories or groups of elements. For the sake of brevity, the terms “first,” “second,” etc., may respectively represent “first category (or first group),” “second category (or second group),” etc.

[0058] In this example, the x-axis, y-axis, and / or z-axis are not limited to the three axes of a Cartesian coordinate system and can be interpreted in a broader sense. For example, the x-axis, y-axis, and z-axis can be perpendicular to each other, or they can represent different directions that are not perpendicular to each other. The same applies to the first direction, the second direction, and / or the third direction.

[0059] The terminology used herein is for the purpose of describing embodiments only and is not intended to limit this disclosure. As used herein, the singular form “a” is intended to include the plural form as well, and the plural form is intended to include the singular form, unless the context clearly indicates otherwise. It will be further understood that, when used in this specification, the terms “comprising,” “having,” and “including” indicate the presence of the stated features, integrals, steps, operations, elements, and / or components, but do not exclude the presence or addition of one or more other features, integrals, steps, operations, elements, components, and / or groups thereof.

[0060] When one or more embodiments can be implemented differently, a particular process sequence may be performed differently than the described sequence. For example, two consecutively described processes may be performed substantially simultaneously, or in the reverse order of their description.

[0061] As used herein, the terms “substantially,” “about,” “approximately,” and similar terms are used as terms of approximation rather than terms of degree and are intended to take into account the inherent deviations of measured or calculated values ​​that would be acceptable to those skilled in the art. For example, “substantially” can include a range of ±5% of the corresponding value. Taking into account the measurements discussed and the errors associated with the measurement of a specific quantity (i.e., limitations of the measurement system), “about” or “approximately” as used herein includes the stated value and means within an acceptable deviation range of the specific value as determined by those skilled in the art. For example, “about” can mean within one or more standard deviations, or within ±30%, ±20%, ±10%, ±5% of the stated value. Furthermore, the word “may” as used in describing embodiments of this disclosure refers to “one or more embodiments of this disclosure.” Additionally, the expression “identical” can mean “substantially identical.” In other words, the expression “identical” can include a range that would be permissible to those skilled in the art. Other expressions may also be “substantially” from those omitted therefrom.

[0062] Unless otherwise defined, all terms used herein (including technical and scientific terms) shall have the same meaning as commonly understood by one of ordinary skill in the art to which this disclosure pertains. It will be further understood that terms such as those defined in common dictionaries shall be interpreted as having meanings consistent with their meanings in the context of the relevant technology and / or this specification, and shall not be interpreted in an idealized or overly formal sense, unless specifically limited thereto herein.

[0063] Figure 1 This is a schematic perspective view of an electronic device 1 according to one or more embodiments.

[0064] refer to Figure 1 Electronic device 1 may include means for displaying moving or still images, and can be used as a display screen for various products including televisions, laptops, monitors, billboards, Internet of Things (IoT) devices, and portable electronic devices including mobile phones, smartphones, tablet PCs, mobile communication terminals, electronic notebooks, e-books, portable multimedia players (PMPs), navigators, and ultra-mobile personal computers (UMPCs). Furthermore, electronic device 1 can be used in wearable devices such as smartwatches, watch phones, glasses displays, and head-mounted displays (HMDs). Additionally, in one or more embodiments, electronic device 1 can be used as a display in a vehicle's dashboard, a central dashboard or central information display (CID) arranged on the instrument panel, an interior mirror display replacing a vehicle's rearview mirror, and a display on the back of the front seats for a rear-seat passenger entertainment system. For ease of description, Figure 1This illustrates an electronic device 1 used as a smartphone according to one or more embodiments.

[0065] Electronic device 1 can have a rectangular shape in a plan view. For example, as shown... Figure 1 As shown, the electronic device 1 in the plan view can have a quadrilateral shape including a short side in the x-direction and a long side in the y-direction. The corner where the short side in the x-direction intersects the long side in the y-direction can be rounded to have a corresponding curvature (e.g., a preset curvature), or it can be formed to have a right angle. The planar shape of the electronic device 1 is not limited to a rectangle, but can be other shapes such as other polygonal shapes, elliptical shapes, or irregular shapes.

[0066] Electronic device 1 may include an opening region OA (or a first region) and a display region DA (or a second region) that at least surrounds the opening region OA (e.g., in a plan view). Electronic device 1 may include a non-display region MA (or a third region, hereinafter referred to as the inner non-display region MA) adjacent to the opening region OA and located inside the display region DA, and a non-display region PA (or a fourth region, hereinafter referred to as the outer non-display region PA) provided outside the display region DA. The inner non-display region MA may have a closed-loop shape completely surrounding the opening region OA in a plan view and may be completely surrounded by the display region DA. The outer non-display region PA may completely surround the display region DA in a plan view.

[0067] The opening region OA can be located inside the display region DA. In one or more embodiments, the opening region OA can be located at the upper center of the display region DA, such as... Figure 1 As shown in the diagram. Alternatively, the opening area OA can be located to the upper left or upper right of the display area DA. However, the opening area OA can be located in various positions. Although Figure 1 The illustration shows one opening region OA being placed, but in one or more other embodiments, multiple opening regions OA may be placed.

[0068] Figure 2 According to one or more embodiments along Figure 1 A schematic cross-sectional view of electronic device 1 taken by line I-I'.

[0069] refer to Figure 2 The electronic device 1 may include a display panel 10 and a component 70 located in or overlapping with an opening region OA of the display panel 10. The display panel 10 and the component 70 may be housed in a housing HS. For example, the component 70 may be below the display panel 10 and overlap with the opening region OA.

[0070] The display panel 10 may include an image generation layer 20, an input sensing layer 40, an optical function layer 50, and a cover window 60.

[0071] Image generation layer 20 may include a display element (or light-emitting element) for emitting light to display an image. The display element may include a light-emitting diode (LED), such as an organic light-emitting diode (OLED) including an organic emitting layer. In one or more other embodiments, the LED may be an inorganic LED comprising inorganic materials. An inorganic LED may include a PN junction diode comprising inorganic semiconductor materials. When a forward voltage is applied to the PN junction diode, holes and electrons are injected, and light of a corresponding color (e.g., a preset color) can be emitted, while the energy generated by the recombination of holes and electrons is converted into light energy. The inorganic LED may have a width of several micrometers to several hundred micrometers, or a width of several nanometers to several hundred nanometers. In one or more embodiments, image generation layer 20 may include a quantum dot LED. As an example, the emitting layer of image generation layer 20 may include organic materials, inorganic materials, quantum dots, organic materials and quantum dots, or inorganic materials and quantum dots.

[0072] The input sensing layer 40 can be configured to acquire coordinate information corresponding to an external input (e.g., a touch event). The input sensing layer 40 may include sensing electrodes (or touch electrodes) and traces connected to the sensing electrodes. The input sensing layer 40 may be located on top of the image generation layer 20 (as used herein, "located on" can mean "above"). The input sensing layer 40 can sense external input using self-capacitance and / or mutual capacitance methods.

[0073] The input sensing layer 40 can be formed directly on the image generation layer 20, or it can be formed separately and then coupled to the image generation layer 20 using an optically transparent adhesive. As an example, the input sensing layer 40 can be formed sequentially after the process of forming the image generation layer 20. In this case, the adhesive layer may not be located between the input sensing layer 40 and the image generation layer 20. Although... Figure 2 The diagram shows that the input sensing layer 40 is located between the image generation layer 20 and the optical function layer 50, but the input sensing layer 40 may be located on the optical function layer 50.

[0074] The optical functional layer 50 may include an anti-reflective layer. The anti-reflective layer reduces the reflectivity of light (external light) incident from the outside through the cover window 60 toward the display panel 10. The anti-reflective layer may include a phase delayer and a polarizer. In one or more other embodiments, the anti-reflective layer may include a black matrix and a color filter. The color filter can be arranged taking into account the colors of the light emitted from the light-emitting diodes of the image generation layer 20.

[0075] To improve the transmittance of the opening region OA, the display panel 10 may include or define an opening 10OP that passes through some of the layers constituting the display panel 10. The opening 10OP may include first to third openings 20OP, 40OP, and 50OP that pass through the image generation layer 20, the input sensing layer 40, and the optical functional layer 50, respectively. The first opening 20OP of the image generation layer 20, the second opening 40OP of the input sensing layer 40, and the third opening 50OP of the optical functional layer 50 may overlap each other to form the opening 10OP of the display panel 10.

[0076] Cover window 60 may be located on optical functional layer 50. Cover window 60 may be coupled to optical functional layer 50 via an adhesive layer OCA, such as a transparent optically transparent adhesive (OCA). Cover window 60 may cover the first opening 20OP of image generation layer 20, the second opening 40OP of input sensing layer 40, and the third opening 50OP of optical functional layer 50.

[0077] The cover window 60 may include glass or plastic. The glass may include ultra-thin glass. The plastic may include polyethersulfone, polyacrylate, polyetherimide, polyethylene naphthalate, polyethylene terephthalate, polyphenylene sulfide, polyarylate, polyimide, polycarbonate, or cellulose acetate propionate.

[0078] The opening area OA can be a component area (e.g., a sensor area, a camera area, and / or a speaker area, etc.) where the component 70 for adding various functions to the electronic device 1 is located.

[0079] Component 70 may include electronic components. As an example, component 70 may be an electronic component that uses light or sound. As examples, the electronic component may include a light-using sensor (such as an infrared sensor), a camera that receives light to capture an image, a sensor that outputs and senses light or sound to measure distance or identify fingerprints, a small light that outputs light, and a speaker that outputs sound. The light-using electronic component may use light of various wavelength bands, such as visible light, infrared light, and ultraviolet light. The opening region OA corresponds to the area through which light and / or sound output from component 70 to the outside, or light and / or sound traveling from the outside toward component 70, can pass.

[0080] Figure 3 This is a schematic plan view of a display panel 10 according to one or more embodiments.

[0081] refer to Figure 3 The display panel 10 may include an opening area OA, a display area DA, an internal non-display area MA, and an external non-display area PA.

[0082] The display panel 10 may include a plurality of pixels PX located in the display area DA, and an image may be displayed using light emitted from each of the pixels PX. Each pixel PX may emit red, green, or blue light by using a light-emitting diode. The light-emitting diode of each pixel PX may be electrically connected to a scan line SL and a data line DL.

[0083] In the external non-display area PA, a scan driver 2100 for providing scan signals to each pixel PX, a data driver 2200 for providing data signals to each pixel PX, and a first main power wiring and a second main power wiring for providing a first power voltage and a second power voltage, respectively, can be arranged. The scan drivers 2100 can be located on two opposite sides, and the display area DA is located between these two opposite sides. In this case, the pixels PX located on the left side around the opening area OA can be connected to the scan driver 2100 located on the left side, and the pixels PX located on the right side around the opening area OA can be connected to the scan driver 2100 located on the right side.

[0084] An internal non-display area MA may surround an opening area OA. The internal non-display area MA is an area where display elements, such as light-emitting diodes (LEDs) for emitting light, are not located. Signal lines may pass through the internal non-display area MA, where signal lines provide signals to pixels PX provided around the opening area OA. As an example, data lines DL and / or scan lines SL pass through the display area DA, and some of the data lines DL and / or scan lines SL may bypass the internal non-display area MA along the edge of the opening 10OP formed in the opening area OA of the display panel 10. In one or more embodiments, Figure 3 The diagram shows data lines DL crossing the display area DA in the y-direction, with some of DL lines bypassing the inner non-display area MA to partially surround the opening area OA. Scan lines SL cross the display area DA in the x-direction and can be separated from each other, with the opening area OA situated between the scan lines SL.

[0085] although Figure 3 The diagram shows the data driver 2200 located near one lateral side of the substrate 100, but in one or more other embodiments, the data driver 2200 may be located on a printed circuit board electrically connected to pads located on one side of the display panel 10. The printed circuit board may be flexible, and a portion of the printed circuit board may be bent to be located below the back side of the substrate 100.

[0086] Figure 4A and Figure 4B This is a schematic equivalent circuit diagram of a light-emitting diode (LED) and a pixel circuit PC connected to the LED, according to one or more embodiments.

[0087] refer to Figure 4A and Figure 4B ,refer to Figure 3 The described pixel PX can be illuminated using a light-emitting diode (LED), and the LED can be electrically connected to the pixel circuit PC.

[0088] The pixel circuit PC may include a first thin-film transistor T1, a second thin-film transistor T2, a third thin-film transistor T3, a fourth thin-film transistor T4, a fifth thin-film transistor T5, a sixth thin-film transistor T6, a seventh thin-film transistor T7, and a storage capacitor Cst.

[0089] One or more of the first to seventh thin-film transistors T1, T2, T3, T4, T5, T6, and T7 can be N-channel metal-oxide-semiconductor (NMOS) field-effect transistors (N-channel MOSFETs), and one or more of the other transistors can be P-channel metal-oxide-semiconductor (PMOS) field-effect transistors (P-channel MOSFETs). In one or more embodiments, among the first to seventh thin-film transistors T1, T2, T3, T4, T5, T6, and T7, the third thin-film transistor T3 and the fourth thin-film transistor T4 can be N-channel MOSFETs, and the remaining transistors can be P-channel MOSFETs. In one or more other embodiments, such as Figure 4B As shown, among the first to seventh thin-film transistors T1, T2, T3, T4, T5, T6 and T7, the fifth thin-film transistor T5 can be a P-channel MOSFET, and the remaining transistors can be N-channel MOSFETs.

[0090] At least one of the first to seventh thin-film transistors T1, T2, T3, T4, T5, T6, and T7 may be a transistor having a low-temperature polycrystalline silicon (LTPS) semiconductor layer, and at least one of the first to seventh thin-film transistors T1, T2, T3, T4, T5, T6, and T7 may be a transistor having an oxide semiconductor layer. In one or more embodiments, Figure 4A The third thin-film transistor T3 and the fourth thin-film transistor T4 shown may include an oxide semiconductor layer with low leakage current, and the first thin-film transistor T1, the second thin-film transistor T2, the fifth thin-film transistor T5, the sixth thin-film transistor T6, and the seventh thin-film transistor T7 may include a semiconductor layer comprising polycrystalline silicon. In one or more other embodiments, Figure 4B The fifth thin-film transistor T5 shown may include a semiconductor layer comprising polycrystalline silicon, and the first thin-film transistor T1, the second thin-film transistor T2, the third thin-film transistor T3, the fourth thin-film transistor T4, the sixth thin-film transistor T6 and the seventh thin-film transistor T7 may include an oxide semiconductor layer.

[0091] The second thin-film transistor T2 is a data writing thin-film transistor that can be connected to the scan line SL and the data line DL. It can be configured to transmit a data voltage (or data signal Dm) to the first thin-film transistor T1 based on a switching voltage (or scan signal Sn). The data voltage is input from the data line DL, and the switching voltage is input from the scan line SL. A storage capacitor Cst can be connected to the first thin-film transistor T1 and the drive voltage line PL. It can be configured to store a voltage corresponding to the difference between the data voltage transmitted from the second thin-film transistor T2 and the drive voltage ELVDD supplied to the drive voltage line PL.

[0092] The first thin-film transistor T1 is a driving thin-film transistor that can be connected to a driving voltage line PL and a storage capacitor Cst. It can be configured to control the driving current based on the voltage stored in the storage capacitor Cst, with the driving current flowing from the driving voltage line PL to the light-emitting diode (LED). The LED can be configured to emit light with a brightness (e.g., a preset brightness) corresponding to the driving current. The second electrode (e.g., the cathode) of the LED can be configured to receive a common voltage ELVSS.

[0093] The third thin-film transistor T3 is a compensation thin-film transistor, and its gate electrode can be connected to the scan line SL. The source electrode (or drain electrode) of the third thin-film transistor T3 can be connected to the drain electrode (or source electrode) of the first thin-film transistor T1, and can be connected to the first electrode of the light-emitting diode (LED) via the sixth thin-film transistor T6. The drain electrode (or source electrode) of the third thin-film transistor T3 can be connected to one of the electrodes of the storage capacitor Cst, the source electrode (or drain electrode) of the fourth thin-film transistor T4, and the gate electrode of the first thin-film transistor T1. The third thin-film transistor T3 is turned on according to the scan signal Sn received via the scan line SL, and the first thin-film transistor T1 can be connected as a diode by connecting its gate electrode and drain electrode to each other.

[0094] The fourth thin-film transistor T4 is an initialization thin-film transistor, and its gate electrode can be connected to the prior scan line SL-1. The drain electrode (or source electrode) of the fourth thin-film transistor T4 can be connected to the initialization voltage line VL. The source electrode (or drain electrode) of the fourth thin-film transistor T4 can be connected to one of the electrodes of the storage capacitor Cst, the drain electrode (or source electrode) of the third thin-film transistor T3, and the gate electrode of the first thin-film transistor T1. The fourth thin-film transistor T4 can be turned on according to the prior scan signal Sn-1 received via the prior scan line SL-1, and can perform the initialization operation of the gate electrode voltage of the first thin-film transistor T1 by transmitting the initialization voltage Vint to the gate electrode of the first thin-film transistor T1.

[0095] The fifth thin-film transistor T5 is an operation control thin-film transistor, and its gate electrode can be connected to the emitter control line EL. The source electrode (or drain electrode) of the fifth thin-film transistor T5 can be connected to the drive voltage line PL. The drain electrode (or source electrode) of the fifth thin-film transistor T5 is connected to the source electrode (or drain electrode) of the first thin-film transistor T1 and to the drain electrode (source electrode) of the second thin-film transistor T2.

[0096] The sixth thin-film transistor T6 is an emitter control thin-film transistor, and its gate electrode can be connected to the emitter control line EL. The source electrode (or drain electrode) of the sixth thin-film transistor T6 is connected to the drain electrode (or source electrode) of the first thin-film transistor T1 and to the source electrode (drain electrode) of the third thin-film transistor T3. The drain electrode (source electrode) of the sixth thin-film transistor T6 can be electrically connected to the first electrode of the light-emitting diode (LED). The fifth thin-film transistor T5 and the sixth thin-film transistor T6 can be turned on simultaneously or substantially simultaneously according to the emitter control signal En transmitted through the emitter control line EL, driving the voltage ELVDD to the LED and driving the current through the LED.

[0097] The seventh thin-film transistor T7 can be an initialization thin-film transistor configured to initialize the first electrode of a light-emitting diode (LED). The gate electrode of the seventh thin-film transistor T7 can be connected to the rear scan line SL+1. The source electrode (drain electrode) of the seventh thin-film transistor T7 can be connected to the first electrode of the LED. The drain electrode (or source electrode) of the seventh thin-film transistor T7 can be connected to the initialization voltage line VL. The seventh thin-film transistor T7 can be turned on according to the rear scan signal Sn+1 transmitted via the rear scan line SL+1, and can initialize the first electrode of the LED.

[0098] although Figure 4A and Figure 4B The diagram shows that the fourth thin-film transistor T4 and the seventh thin-film transistor T7 are connected to the first scan line SL-1 and the second scan line SL+1, respectively. However, in one or more other embodiments, both the fourth thin-film transistor T4 and the seventh thin-film transistor T7 may be connected to the first scan line SL-1 and driven according to the first scan signal Sn-1.

[0099] The other electrode of the storage capacitor Cst can be connected to the drive voltage line PL. One of the electrodes of the storage capacitor Cst can be connected to the gate electrode of the first thin-film transistor T1, the drain electrode (or source electrode) of the third thin-film transistor T3, and the source electrode (or drain electrode) of the fourth thin-film transistor T4.

[0100] The second electrode (e.g., cathode) of the light-emitting diode (LED) is configured to receive a common voltage ELVSS. The LED is configured to emit light by receiving a drive current from the first thin-film transistor T1.

[0101] Figure 5 It is a plan view of a portion of a display panel 10 according to one or more embodiments.

[0102] refer to Figure 5 Pixel PX can be located within the display area DA. The internal non-display area MA can be located between the aperture area OA and the display area DA. Pixels PX adjacent to the aperture area OA can be separated from each other around the aperture area OA in a plan view. In a plan view, pixels PX can be perpendicularly separated from each other around the aperture area OA, or horizontally separated from each other around the aperture area OA. Because each pixel PX uses red, green, or blue light emitted from a light-emitting diode, Figure 5 The positions of pixels PX shown correspond to the positions of light-emitting diodes (LEDs). Therefore, when pixels PX are separated from each other around the opening region OA in a planar view, this can represent that the LEDs are separated from each other around the opening region OA in the planar view. As an example, in a planar view, the LEDs can be separated from each other perpendicularly or horizontally around the opening region OA.

[0103] Among the signal lines configured to supply signals to the pixel circuitry of the light-emitting diodes connected to each pixel PX, the signal lines adjacent to the opening region OA may bypass the opening region OA and / or the opening 10OP. Some of the data lines DL passing through the display region DA may extend in the y-direction and in the opposite direction to provide data signals to the vertically placed pixel PX with the opening region OA located therebetween, and may bypass the opening region OA and / or the opening 10OP in the inner non-display region MA.

[0104] At least one of the data lines DL, the winding portion DL-C1 and the extension portion DL-L1 passing through the display area DA, can be located on different layers, and the winding portion DL-C1 of the data line DL can be connected to the extension portion DL-L1 through a contact hole CNT. At least one of the data lines DL, the winding portion DL-C2, can be located on the same layer as the extension portion DL-L2, and can be integrally formed with the extension portion DL-L2.

[0105] As referenced above Figure 3As described, the scan line SL can be separated or disconnected around the opening region OA. The scan line SL located on the left side around the opening region OA can receive signals from the scan driver 2100 located on the left side around the display region DA, and the scan line SL located on the right side around the opening region OA can receive signals from the scan driver 2100 located on the right side around the display region DA.

[0106] The overhanging structure OHS can be located between the open area OA and the area where the data lines DL of the inner non-display area MA pass through. In a plan view, each of the overhanging structures OHS can have a closed loop shape around the open area OA, and the overhanging structures OHS can be separated from each other.

[0107] Figure 6 The edge of the display panel 10 according to one or more embodiments Figure 5 The cross-sectional view taken from line VI-VI'.

[0108] refer to Figure 6 The display area DA, substrate 100 may comprise glass or polymer resin. In one or more embodiments, substrate 100 may have a stacked structure in which a base layer comprising a polymer resin and a barrier layer comprising an inorganic insulating material (such as silicon oxide or silicon nitride) are alternately stacked. The polymer resin may comprise polyethersulfone, polyarylate, polyetherimide, polyethylene naphthalate, polyethylene terephthalate, polyphenylene sulfide, polyimide, polycarbonate, cellulose triacetate, and cellulose acetate propionate, etc.

[0109] Pixel circuitry PC can be formed on substrate 100, and light-emitting diodes (e.g., organic light-emitting diodes OLED) can be located on pixel circuitry PC. The organic light-emitting diode OLED can be located on the inorganic insulating structure IL described below (see...). Figure 7 )superior.

[0110] A buffer layer 201 may be formed on the substrate 100 (e.g., on the substrate 100 before forming the pixel circuit PC) to reduce or prevent impurities from penetrating into the pixel circuit PC. The buffer layer 201 may include an inorganic insulating material such as silicon nitride, silicon oxynitride, and / or silicon oxide, and may include a single-layer structure or a multi-layer structure containing the above inorganic insulating materials.

[0111] As referenced above Figure 4A or Figure 4B The pixel circuit PC described herein may include a storage capacitor and multiple transistors. Regarding this, Figure 6 The first thin-film transistor T1, the third thin-film transistor T3, and the storage capacitor Cst are shown.

[0112] The first thin-film transistor T1 may include a semiconductor layer (hereinafter referred to as the first semiconductor layer A1) on a buffer layer 201 and a gate electrode (hereinafter referred to as the first gate electrode GE1) overlapping the channel region C1 of the first semiconductor layer A1. The first semiconductor layer A1 may include a silicon-based semiconductor material, such as polysilicon. The first semiconductor layer A1 may include the channel region C1 and a first region B1 and a second region D1 located on two opposite sides of the channel region C1. The first region B1 and the second region D1 are regions containing a higher concentration of impurities than the channel region C1. One of the first region B1 and the second region D1 may correspond to the source region, and the other may correspond to the drain region.

[0113] The first gate insulating layer 203 may be located between the first semiconductor layer A1 and the first gate electrode GE1. The first gate insulating layer 203 may include inorganic insulating materials such as silicon nitride, silicon oxynitride, and silicon oxide, and may include a single-layer structure or a multi-layer structure containing the above inorganic insulating materials.

[0114] The first gate electrode GE1 may include a conductive material comprising molybdenum (Mo), aluminum (Al), copper (Cu) and / or titanium (Ti), and may have a single-layer structure or a multi-layer structure comprising the above materials.

[0115] The storage capacitor Cst may include a lower electrode CE1 and an upper electrode CE2 that overlap each other. In one or more embodiments, the lower electrode CE1 of the storage capacitor Cst may include a first gate electrode GE1. In other words, the first gate electrode GE1 may include the lower electrode CE1 of the storage capacitor Cst. As an example, the first gate electrode GE1 and the lower electrode CE1 of the storage capacitor Cst may be integrally formed.

[0116] The first interlayer insulating layer 205 may be located between the lower electrode CE1 and the upper electrode CE2 of the storage capacitor Cst. The first interlayer insulating layer 205 may include inorganic insulating materials such as silicon nitride, silicon oxynitride, and silicon oxide, and may include a single-layer structure or a multi-layer structure containing the above inorganic insulating materials.

[0117] The upper electrode CE2 of the storage capacitor Cst may include a conductive material of low resistance such as molybdenum (Mo), aluminum (Al), copper (Cu) and / or titanium (Ti), and may have a single-layer structure or a multi-layer structure including the above materials.

[0118] The second interlayer insulation layer 207 may be located on the storage capacitor Cst. The second interlayer insulation layer 207 may include inorganic insulating materials such as silicon nitride, silicon oxynitride, and / or silicon oxide, and may include a single-layer structure or a multi-layer structure containing the above inorganic insulating materials.

[0119] The semiconductor layer of the third thin-film transistor T3 (hereinafter referred to as the third semiconductor layer A3) may be located on the second interlayer insulating layer 207. The third semiconductor layer A3 may include an oxide-based semiconductor material. As an example, the third semiconductor layer A3 may include a Zn oxide-based material, such as Zn oxide, In-Zn oxide, and / or Ga-In-Zn oxide. In one or more embodiments, the third semiconductor layer A3 may include an In-Ga-Zn-O (IGZO) semiconductor, an In-Sn-Zn-O (ITZO) semiconductor, or an In-Ga-Sn-Zn-O (IGTZO) semiconductor that contains a metal (such as indium (In), gallium (Ga), and / or tin (Sn)) in ZnO.

[0120] The third semiconductor layer A3 may include a channel region C3 and a first region B3 and a second region D3 located on two opposite sides of the channel region C3. One of the first region B3 and the second region D3 may correspond to the source region, and the other may correspond to the drain region.

[0121] The third thin-film transistor T3 may include a gate electrode (hereinafter referred to as the third gate electrode GE3) that overlaps with the channel region C3 of the third semiconductor layer A3. The third gate electrode GE3 may have a dual-gate structure including a lower gate electrode G3A and an upper gate electrode G3B, wherein the lower gate electrode G3A is below the third semiconductor layer A3 and the upper gate electrode G3B is above the channel region C3.

[0122] The lower gate electrode G3A may be located in the same layer as the upper electrode CE2 of the storage capacitor Cst (e.g., on the first interlayer insulating layer 205). The lower gate electrode G3A may be made of the same material as the upper electrode CE2 of the storage capacitor Cst.

[0123] The upper gate electrode G3B may be located above the third semiconductor layer A3, while the second gate insulating layer 209 is located between the upper gate electrode G3B and the third semiconductor layer A3. The second gate insulating layer 209 may include an inorganic insulating material such as silicon nitride, silicon oxynitride, and / or silicon oxide, and may include a single-layer structure or a multi-layer structure containing the above inorganic insulating material.

[0124] The third interlayer insulating layer 210 may be located on the upper gate electrode G3B. The third interlayer insulating layer 210 may include an inorganic insulating material such as silicon oxynitride, and may have a single layer or multiple layers including the inorganic insulating material.

[0125] Figure 6 Reference shown Figure 4AThe first thin-film transistor T1 and the third thin-film transistor T3 are described, and the first semiconductor layer A1 and the third semiconductor layer A3 are shown to be located in different layers. In one or more embodiments, the second thin-film transistor T2, the fifth thin-film transistor T5, the sixth thin-film transistor T6, and the seventh thin-film transistor T7 (see [link to documentation]) are also described. Figure 4A It can have the same reference Figure 6 The first thin-film transistor T1 described has the same structure. As examples, the second thin-film transistor T2, the fifth thin-film transistor T5, the sixth thin-film transistor T6, and the seventh thin-film transistor T7 (see [link to documentation]) also have similar structures. Figure 4A The first thin-film transistor (TFT) may include a semiconductor layer located on the same layer as the first semiconductor layer A1 of the first TFT T1 (e.g., on the buffer layer 201) and a gate electrode located on the same layer as the first gate electrode GE1 of the first TFT T1 (e.g., on the first gate insulating layer 203). The second TFT T2, fifth TFT T5, sixth TFT T6, and seventh TFT T7 (see...) Figure 4A The semiconductor layer of A1 can be integrally connected to the first semiconductor layer A1.

[0126] although Figure 6 The diagram shows that the first semiconductor layer A1 and the third semiconductor layer A3 are located in different layers, but this disclosure is not limited thereto. In one or more other embodiments, the first thin-film transistor T1 and the third thin-film transistor T3 are... Figure 4B In the case of the same NMOS transistor, the first semiconductor layer A1 can be located on the same layer as the third semiconductor layer A3, that is, on the second interlayer insulating layer 207. Furthermore, Figure 4B The semiconductor layer of the fifth thin-film transistor T5 may be a semiconductor layer comprising polysilicon and may be located on the buffer layer 201. In the following description, for ease of description, the case in which the first semiconductor layer A1 of the first thin-film transistor T1 comprises polysilicon and the third semiconductor layer A3 of the third thin-film transistor T3 comprises oxide semiconductor is described.

[0127] The first thin-film transistor T1 can be electrically connected to the third thin-film transistor T3 via node connection line 166. Node connection line 166 can be located on the third interlayer insulating layer 210. One side of node connection line 166 can be connected to the first gate electrode GE1 of the first thin-film transistor T1, and the other side of node connection line 166 can be connected to the third semiconductor layer A3 of the third thin-film transistor T3.

[0128] The node connection line 166 may include aluminum (Al), copper (Cu), and / or titanium (Ti), and may include a single layer or multiple layers containing the above materials. As an example, the node connection line 166 may have a three-layer structure of titanium layer / aluminum layer / titanium layer.

[0129] The first organic insulating layer 211 may be located on the node connection line 166. The first organic insulating layer 211 may include an organic insulating material. The organic insulating material may include acrylic acid, benzocyclobutene (BCB), polyimide, or hexamethyldisiloxane (HMDSO).

[0130] The data line DL and the drive voltage line PL can be located on the first organic insulating layer 211 and can be covered by the second organic insulating layer 213. The data line DL and the drive voltage line PL can include aluminum (Al), copper (Cu), and / or titanium (Ti), and can include a single layer or multiple layers containing the above materials. As an example, the data line DL and the drive voltage line PL can each have a three-layer structure of titanium layer / aluminum layer / titanium layer.

[0131] The second organic insulating layer 213 may include acrylic acid, BCB, polyimide, and / or HMDSO. Although Figure 6 The diagram shows that the data line DL and the drive voltage line PL are formed on the first organic insulating layer 211, but this disclosure is not limited thereto. In one or more other embodiments, one of the data line DL and the drive voltage line PL may be located on the same layer as the node connection line 166.

[0132] A light-emitting diode (e.g., an organic light-emitting diode OLED) may be located on the second organic insulating layer 213.

[0133] The pixel electrode 221 of an organic light-emitting diode (OLED) may include a reflective layer comprising silver (Ag), magnesium (Mg), aluminum (Al), platinum (Pt), palladium (Pd), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), or compounds thereof. In one or more other embodiments, the pixel electrode 221 may further include a conductive oxide material layer on and / or under the reflective layer. The conductive oxide material layer may include indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), indium oxide (In2O3), indium gallium oxide (IGO), and / or aluminum zinc oxide (AZO). In one or more embodiments, the pixel electrode 221 may have a three-layer structure of ITO layer / Ag layer / ITO layer.

[0134] The dam layer 215 may be located on the pixel electrode 221. The dam layer 215 may include or define an opening that overlaps with the pixel electrode 221 and may cover the edge of the pixel electrode 221. The dam layer 215 may include an organic insulating material.

[0135] Intermediate layer 222 includes an emitting layer 222b. Intermediate layer 222 may include a first functional layer 222a and / or a second functional layer 222c, wherein the first functional layer 222a is below the emitting layer 222b and the second functional layer 222c is above the emitting layer 222b. Emitting layer 222b may include a polymeric organic material or a low molecular weight organic material configured to emit light having a corresponding color (e.g., a preset color). First functional layer 222a may include a hole transport layer (HTL) and / or a hole injection layer (HIL). Second functional layer 222c may include an electron transport layer (ETL) and / or an electron injection layer (EIL). First functional layer 222a and second functional layer 222c may each include an organic material.

[0136] The counter electrode 223 may comprise a conductive material having a low work function. As an example, the counter electrode 223 may comprise a (semi-)transparent layer comprising silver (Ag), magnesium (Mg), aluminum (Al), platinum (Pt), palladium (Pd), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), or alloys thereof. Alternatively, the counter electrode 223 may further comprise a layer on the (semi-)transparent layer comprising ITO, IZO, ZnO, or In2O3.

[0137] The emitter layer 222b can be formed in the display area DA such that it overlaps with the pixel electrode 221 through the opening in the dam layer 215. Conversely, the first functional layer 222a, the second functional layer 222c, and the counter electrode 223 can extend not only into the display area DA but also into the inner non-display area MA.

[0138] Spacer 217 may be formed on dam 215. Spacer 217 may be formed during the same process as forming dam 215, or it may be formed separately during a separate process. In one or more embodiments, spacer 217 may comprise an organic insulating material such as polyimide.

[0139] An organic light-emitting diode (OLED) can be covered by an encapsulation layer 300. The encapsulation layer 300 may include at least one organic encapsulation layer and at least one inorganic encapsulation layer. In one or more embodiments, Figure 6 The encapsulation layer 300 shown includes a first inorganic encapsulation layer 310, a second inorganic encapsulation layer 330, and an organic encapsulation layer 320 located between the first inorganic encapsulation layer 310 and the second inorganic encapsulation layer 330.

[0140] The first inorganic encapsulation layer 310 and the second inorganic encapsulation layer 330 may comprise at least one inorganic material selected from alumina, titanium oxide, tantalum oxide, hafnium oxide, zinc oxide, silicon oxide, silicon nitride, and silicon oxynitride. The first inorganic encapsulation layer 310 and the second inorganic encapsulation layer 330 may comprise a single layer or multiple layers containing the above materials. The organic encapsulation layer 320 may comprise a polymeric material. The polymeric material may include acrylic resins, epoxy resins, polyimides, and polyethylene. In one or more embodiments, the organic encapsulation layer 320 may comprise acrylates.

[0141] The thickness of the first inorganic encapsulation layer 310 may be different from the thickness of the second inorganic encapsulation layer 330. The thickness of the first inorganic encapsulation layer 310 may be greater than the thickness of the second inorganic encapsulation layer 330. Alternatively, the thickness of the second inorganic encapsulation layer 330 may be greater than the thickness of the first inorganic encapsulation layer 310, or the thickness of the first inorganic encapsulation layer 310 may be the same as the thickness of the second inorganic encapsulation layer 330.

[0142] The display panel 10 may include a substrate 100 and an image generation layer 20, and the image generation layer 20 may include a circuit diode layer 200 located on the substrate 100 and including pixel circuitry PC and light-emitting diodes, as well as an encapsulation layer 300. (See above references) Figure 2 The input sensing layer 40 (see description) Figure 2 ) and optical functional layer 50 (see Figure 2 These can be further located on the image generation layer 20.

[0143] refer to Figure 6 The internal non-display area MA, which may include the above references Figure 5 The described data lines DL have bypass sections DL-C1 and DL-C2 that pass through their line bypass area WBA.

[0144] The winding portions DL-C1 and DL-C2 of the data line DL can be located on different layers. One of the winding portions DL-C1 and DL-C2 of adjacent data lines DL can be located on the third interlayer insulation layer 210, and the other can be located on the first organic insulation layer 211.

[0145] When the winding portions DL-C1 and DL-C2 of the data line DL are placed alternately with an insulating layer (e.g., the first organic insulating layer 211) in between, the spacing Δd between the winding portions DL-C1 and DL-C2 of the data line DL can be reduced, and therefore, the area in the internal non-display area MA can be effectively utilized.

[0146] Figure 7 The edge of the display panel 10 according to one or more embodiments Figure 5The cross-sectional view taken from line VII-VII'. (Reference) Figure 5 and Figure 7 The display panel 10 may include / define an opening 10OP corresponding to the opening region OA, and the internal non-display region MA may include structures for reducing or preventing crack propagation and / or moisture transport. The opening 10OP of the display panel 10 may be formed through the various layers constituting the display panel 10. Regarding this, Figure 7 The diagram shows an opening 100OP passing through a first surface (hereinafter referred to as the upper surface) and a second surface (hereinafter referred to as the lower surface) of substrate 100, an opening IL-OP passing through the upper and lower surfaces of the inorganic insulating structure IL, and openings 310OP and 330OP of the first inorganic encapsulation layer 310 and the second inorganic encapsulation layer 330. The inorganic insulating structure IL is a stacked structure comprising multiple inorganic insulating layers. In one or more embodiments, as shown... Figure 7 As shown, the inorganic insulating structure IL may include a buffer layer 201, a first gate insulating layer 203, a first interlayer insulating layer 205, a second interlayer insulating layer 207, a second gate insulating layer 209, and a third interlayer insulating layer 210.

[0147] Although for the sake of ease of description Figure 7 The stacked structure from substrate 100 to encapsulation layer 300 is shown, but as referenced above... Figure 2 As described, the display panel 10 may further include an input sensing layer 40, an optical functional layer 50, and a cover window 60 on the encapsulation layer 300, and the input sensing layer 40 and the optical functional layer 50 may each include an opening corresponding to the opening region OA.

[0148] refer to Figure 5 and Figure 7 The trench TCH, the overhang structure OHS, and the first to third partition walls 510, 520, and 530 can be located in the internal non-display area MA. The encapsulation layer 300 can extend to the internal non-display area MA and can overlap or cover the trench TCH, the overhang structure OHS, and the first partition wall 510 and the second partition wall 520.

[0149] The overhanging structures OHS can be separated from each other within the internal non-display area MA. In one or more embodiments, reference... Figure 5 and Figure 7 A suspended structure OHS can be located between the first partition wall 510 and the display area DA (see...). Figure 5 Between, multiple suspended structures OHS can be located between the first partition wall 510 and the second partition wall 520, and at least one suspended structure OHS can be located between the second partition wall 520 and the third partition wall 530. Although Figure 7A suspended structure OHS between the second partition wall 520 and the third partition wall 530 is shown, but this disclosure is not limited thereto. In one or more other embodiments, multiple suspended structures OHS may be located between the second partition wall 520 and the third partition wall 530.

[0150] like Figure 5 As shown, each of the overhanging structures OHS can have a closed-loop shape surrounding the opening region OA in the plan view. In the plan view, when "A" has a closed-loop shape surrounding the opening region OA, this can mean that "A" has a closed-loop shape surrounding the opening 100OP of the substrate 100 in the plan view. Therefore, when each of the overhanging structures OHS can have a closed-loop shape surrounding the opening region OA in the plan view, this can mean that each of the overhanging structures OHS can have a closed-loop shape surrounding the opening 100OP of the substrate 100 in the plan view.

[0151] The overhanging structure OHS can be defined in a multilayer 1000 comprising a first layer 1100 and a second layer 1200, each comprising different materials. The second layer 1200 can be located on the first layer 1100 and can have a thickness less than that of the first layer 1100. The overhanging structure OHS can include or be defined in a groove G defined in the first layer 1100 and an overhanging portion P suspended above the groove G to have an eaves structure. In one or more embodiments, as Figure 7 As shown, the overhang structure OHS may include a groove G defined in a first layer 1100 and two overhang portions P protruding toward each other above the groove G.

[0152] The first layer 1100 may include an insulating material. In one or more embodiments, the first layer 1100 may include an organic insulating material. As an example, the material of the first layer 1100 may be similar to that of a reference material. Figure 6 The first organic insulating layer 211 described is made of the same material. The groove G is a portion recessed in the thickness direction of the first layer 1100, and the depth of the groove G may be less than the thickness of the first layer 1100.

[0153] The first layer 1100 can be separated from each other in the internal non-display area MA. Similar to the overhang structure OHS, the first layer 1100 can have a closed-loop shape surrounding the opening area OA and / or the opening 100OP of the substrate 100.

[0154] The second layer 1200 may include a conductive material. In one or more embodiments, the second layer 1200 may be a metal layer comprising a metallic material including molybdenum (Mo), aluminum (Al), copper (Cu), and / or titanium (Ti). The second layer 1200 may include a single-layer structure or a multi-layer structure comprising the above materials. In one or more embodiments, the second layer 1200 may have a three-layer stacked structure of titanium layer / aluminum layer / titanium layer. As an example, the second layer 1200 may be related to a reference... Figure 6 The described data line DL and / or drive voltage line PL are formed during the same process and may include the same material as the data line DL and / or drive voltage line PL.

[0155] The two second layers 1200 can be located on opposite sides of the groove G. The overhanging portions P of the two second layers 1200 can protrude toward each other above the groove G to have an eaves shape. As an example, the two overhanging portions P located on opposite sides of the groove G can extend toward each other while maintaining a gap.

[0156] A second layer 1200 located on one first layer 1100 may be integrally connected to a second layer 1200 located on another first layer 1100 placed adjacent to it. In other words, a second layer 1200 may include two overhanging portions P extending over the two adjacent first layers 1100 and over the grooves G of each of the two first layers 1100. The second layer 1200 may contact the upper surface of the inorganic insulating structure IL exposed between the two adjacent first layers 1100 (e.g., the inorganic insulating layer directly below the first layers 1100).

[0157] A protective layer 1115 may be located on the overhanging portion P and may protect the overhanging portion P. The protective layer 1115 may be located on the upper surface and side surface of the overhanging portion P. For example, the protective layer 1115 may be in direct contact with the upper surface and side surface of the overhanging portion P. The protective layer 1115 may include a conductive material. In one or more embodiments, the protective layer 1115 may include a reference... Figure 6 The pixel electrode 221 described is made of the same material. The protective layer 1115 may have a three-layer structure of ITO layer / Ag layer / ITO layer. During the process of forming the protective layer 1115, a first material layer 1116 (hereinafter referred to as the first protective material layer 1116) of the same type as the protective layer 1115 may be present at the bottom of the recess G (e.g., at the bottom of the recess G or on the surface of the corresponding first layer 1100 below the recess G).

[0158] In organic light-emitting diodes (OLEDs) (see...) Figure 6Among the layers included in the display panel 10, layers containing organic materials (e.g., first functional layer 222a and / or second functional layer 222c) can be formed not only in the display area DA but also in the inner non-display area MA. As a comparative example, the first functional layer 222a and the second functional layer 222c, continuously formed in the inner non-display area MA, may provide a moisture transport path for moisture introduced through the opening 10OP of the display panel 10, and the organic light-emitting diode OLED (see [link to OLED])... Figure 6 It may be damaged by this moisture.

[0159] In contrast, in this embodiment, among the layers included in the light-emitting diode, the first functional layer 222a and / or the second functional layer 222c, comprising organic materials, are divided into multiple portions within the internal non-display region MA by a hanging structure OHS. Therefore, because the path of moisture introduced through the opening region OA is blocked, the impact on the organic light-emitting diode OLED (see [link to OLED documentation]) can be reduced or prevented. Figure 6 Damage to the electrode 223. Similarly, the counter electrode 223 can be divided into multiple parts within the internal non-display area MA by the overhanging structure OHS. Regarding this, Figure 7 The first functional layer 222a, the second functional layer 222c, and the counter electrode 223 are shown to be divided into multiple portions in the internal non-display area MA. Each of the first functional layer 222a, the second functional layer 222c, and the counter electrode 223 may be divided into a portion located on the overhang portion P and a portion at the bottom of the recess G (e.g., at the bottom of the recess G or on the first material layer 1116 below the recess G).

[0160] The internal non-display area MA may include a trench area TRA relatively close to the opening area OA. The trench area TRA is the region where the trench TCH defined in the inorganic insulating structure IL is located, and the trench TCH may have a shape that is recessed in the thickness direction of the inorganic insulating structure IL. Because the display panel 10 includes the trench TCH defined in the inorganic insulating structure IL, it is possible to reduce or prevent impacts that may occur during the manufacturing process of the display panel 10 (e.g., impacts that occur during the process of forming the opening 10OP of the display panel 10) and the transfer of cracks caused by impacts to the display area DA.

[0161] The trench TCH can be located between the opening area OA and the partition wall closest to the opening area OA. Regarding this, Figure 7 The trench TCH is shown located between the third partition wall 530 and the opening area OA. The width of the trench TCH can be greater than the width of the groove G of the first layer 1100. The depth of the trench TCH can be less than the sum of the thicknesses of the inorganic insulation structure IL. In one or more embodiments, although Figure 7The diagram shows the trench TCH passing through the upper and lower surfaces of the third interlayer insulating layer 210, the upper and lower surfaces of the second gate insulating layer 209, and the upper surface of the second interlayer insulating layer 207, but this disclosure is not limited thereto.

[0162] A trench TCH is a recessed portion that forms a step difference relative to the upper surface of an inorganic insulating structure IL. Two opposite sides of the trench TCH may form a step difference relative to the upper surface of the inorganic insulating structure IL. The trench TCH may include a first edge portion relatively close to the opening region OA and a second edge portion opposite to the first edge portion. Each of the first and second edge portions may form a step difference relative to the upper surface of the inorganic insulating structure IL.

[0163] The insulating layer 110 may cover the step difference. As an example, the insulating layer 110 may cover the step difference that is placed relatively far away from the opening region OA (e.g., the step difference between the second edge portion of the trench TCH and the upper surface of the inorganic insulating structure IL).

[0164] Insulating layer 110 may comprise an organic insulating material. In one or more embodiments, insulating layer 110 may be formed simultaneously or substantially simultaneously with the process of forming first layer 1100, and may comprise the same material as first layer 1100. A portion of insulating layer 110 may be located on the upper surface of inorganic insulating structure IL, and another portion may be located on trench TCH.

[0165] Metal layer 120 may be located on insulating layer 110. Metal layer 120 may be formed simultaneously or substantially simultaneously with the process of forming second layer 1200, and may comprise the same material as second layer 1200. Metal layer 120 may include a first overhang portion 120P that protrudes from the side surface of insulating layer 110 toward trench TCH. Similar to the overhang portion P of overhang structure OHS described above, each of the first functional layer 222a, second functional layer 222c, and counter electrode 223 may be divided into multiple portions by the first overhang portion 120P. In this regard, Figure 7 The diagram shows that each of the first functional layer 222a, the second functional layer 222c, and the counter electrode 223 includes a portion located on the first overhang portion 120P and a portion located at the bottom of the trench TCH.

[0166] In one or more embodiments, such as Figure 7 As shown, the metal layer 120 may be integrally connected to the second layer 1200 of the adjacent overhang structure OHS, and the third partition wall 530 may be located on the connection portion of the second layer 1200 adjacent to the metal layer 120. In one or more other embodiments, the metal layer 120 may be separable from the second layer 1200 of the adjacent overhang structure OHS.

[0167] The first overhang portion 120P of the metal layer 120 can be protected by a protective layer 1115. The protective layer 1115 can be located on the upper surface and side surface of the first overhang portion 120P. During the process of forming the protective layer 1115, a second material layer 1117 (hereinafter referred to as the second protective material layer 1117) identical to the protective layer 1115 can be present at the bottom of the trench TCH.

[0168] Encapsulation layer 300 can extend not only to the display area DA (see...) Figure 5 Furthermore, it can extend to the internal non-display area MA. Each of the first inorganic encapsulation layer 310 and the second inorganic encapsulation layer 330 can be located on or within the trench TCH, on the overhang structure OHS, on the first partition wall 510, on the second partition wall 520, and on the third partition wall 530. Each of the first inorganic encapsulation layer 310 and the second inorganic encapsulation layer 330 can extend toward the opening area OA through the trench region TRA. The first inorganic encapsulation layer 310 can continuously cover the upper surface, side surface, and bottom surface of the overhang portion P and the inner surface of the defining groove G of the first layer 1100, and can continuously cover the upper surface, side surface, and bottom surface of the first overhang portion 120P.

[0169] During the formation of the organic encapsulation layer 320, the partitions are designed to control the flow of monomers. The organic encapsulation layer 320 can be integrated with some components of the overhanging structure OHS (e.g., one of the partitions and the display area DA (see [link]). Figure 5 The overhanging structures (OHS) overlap between the two structures. In one or more embodiments, Figure 7 The diagram shows the organic encapsulation layer 320 with the first partition 510 and the display area DA (see Figure 1). Figure 5 The overhanging structures OHS overlap between the two.

[0170] First partition wall 510 and display area DA (see...) Figure 5 The overhanging structure OHS between the two layers can overlap with the first inorganic encapsulation layer 310, the organic encapsulation layer 320, and the second inorganic encapsulation layer 330.

[0171] The second inorganic encapsulation layer 330 may directly contact the first inorganic encapsulation layer 310 in a portion of the internal non-display area MA. As an example, the second inorganic encapsulation layer 330 may directly contact the first inorganic encapsulation layer 310 between the first partition wall 510 and the opening area OA. In one or more embodiments, such as Figure 7As shown, a portion of the second inorganic encapsulation layer 330 may be in direct contact with a portion of the first inorganic encapsulation layer 310 over the overhang structure OHS between the first partition 510 and the second partition 520, over the overhang structure OHS between the second partition 520 and the third partition 530, and over the first overhang portion 120P and the trench TCH between the third partition 530 and the opening region OA. A portion of the second inorganic encapsulation layer 330 may be in direct contact with a portion of the first inorganic encapsulation layer 310 on the first to third partitions 510, 520, and 530.

[0172] Each of the first partition wall 510 and the second partition wall 520 may be located between adjacent overhanging structures OHS. The first partition wall 510 may cover the ends of each of the second layers 1200 located on two opposite sides of the first partition wall 510 and extending to the upper surface of the inorganic insulating structure IL, and may cover the ends of the protective layer 1115 located on the second layer 1200. The second partition wall 520 may cover the ends of each of the second layers 1200 located on two opposite sides of the second partition wall 520 and extending to the upper surface of the inorganic insulating structure IL, and may cover the ends of the protective layer 1115 located on the second layer 1200. Each of the first to third partition walls 510, 520, and 530 may have a closed-loop shape surrounding the opening region OA in a plan view. In one or more embodiments, the width of the first partition wall 510 may be greater than the width of the second partition wall 520. The width of the second partition wall 520 may be greater than the width of the third partition wall 530.

[0173] Figure 8 This is a cross-sectional view of a portion of a display panel 10 according to one or more embodiments, and is Figure 7 Enlarged view of section VIII. Figure 9 It corresponds to Figure 7 An enlarged view of area VIII, and a cross-sectional view of a portion of the display panel 10 according to one or more other embodiments. Although Figure 8 and Figure 9 The overhanging structure OHS shown in the diagram is located between adjacent partition walls (e.g., in the first partition wall 510 (see...)). Figure 7 ) and the second partition wall 520 (see Figure 7 The disclosure is not limited to the overhanging structure OHS between the two. Figure 8 and Figure 9 The structure of the overhanging structure OHS shown can be connected to the second partition wall 520 and the third partition wall 530 (see...). Figure 7 The overhanging structures between them are the same as those of OHS.

[0174] refer to Figure 8 and Figure 9The overhanging structure OHS can be located on the inorganic insulating structure IL. The overhanging structure OHS can be defined within a multilayer 1000, and the multilayer 1000 can include different materials and can include a first layer 1100 and a second layer 1200 with different thicknesses. The first layer 1100 can include an insulating material, and the second layer 1200 can include a conductive material. In one or more embodiments, the first layer 1100 can include an organic insulating material, which may include acrylic acid, BCB, polyimide, or HMDSO, and can include a single layer or multiple layers containing the above materials. The second layer 1200 can include aluminum (Al), copper (Cu), and / or titanium (Ti), and can include a single layer or multiple layers containing the above materials.

[0175] The first layer 1100 may be located on the uppermost layer of the inorganic insulating structure IL (e.g., the third interlayer insulating layer 210). The first layer 1100 may include a lower surface 1100b, an inner surface 1100i, a side surface 1100s, and an upper surface 1100u. The lower surface 1100b contacts the upper surface of the third interlayer insulating layer 210, the inner surface 1100i defines a groove G (e.g., a portion of the groove G), the side surface 1100s tapers in the forward direction relative to the upper surface of the third interlayer insulating layer 210, and the upper surface 1100u lies between the side surface 1100s and the inner surface 1100i.

[0176] The upper surface 1100u of the first layer 1100 can slope downwards from the outside towards the inside where the groove G is located. Therefore, the first vertical distance H1 from the upper surface of the inorganic insulating structure IL to the point where the side surface 1100s of the first layer 1100 intersects with the upper surface 1100u can be greater than the second vertical distance H2 from the upper surface of the inorganic insulating structure IL to the point where the inner surface 1100i of the first layer 1100 intersects with the bottom surface of the second layer 1200. Because the depth of the groove G is less than the thickness of the first layer 1100, the third vertical distance H3 from the upper surface of the inorganic insulating structure IL to the portion corresponding to the center of the groove G is less than the second vertical distance H2.

[0177] The two second layers 1200 may be located on two opposite sides, with the groove G of the first layer 1100 between the two second layers 1200. Each of the two second layers 1200 located on opposite sides with the groove G between them may include a protruding overhang P above the groove G.

[0178] The second layer 1200 located on one side (e.g., the left side) of the groove G may include an overhanging portion P extending (or protruding) toward the groove G from the point where the lower surface of the second layer 1200 intersects with the inner surface 1100i of the groove G defined by the first layer 1100. Similarly, the second layer 1200 located on the other side (e.g., the right side) of the groove G may include an overhanging portion P extending (or protruding) toward the groove G from the point where the lower surface of the second layer 1200 intersects with the inner surface 1100i of the groove G defined by the first layer 1100. The length L of the overhanging portion P (e.g., the length L from the portion where the lower surface of the second layer 1200 intersects with the inner surface 1100i of the groove G defined by the first layer 1100 to the edge (side surface) of the overhanging portion P) may be in the range of about 0.2 micrometers to about 0.4 micrometers (e.g., 0.2 μm ≤ L ≤ 0.4 μm).

[0179] Each of the two second layers 1200 can extend to the upper surface of the inorganic insulating structure IL through two opposite side surfaces 1100s of the first layer 1100. Each of the second layers 1200 can be in direct contact with the side surfaces 1100s of the first layer 1100 and the upper surface of the inorganic insulating structure IL.

[0180] The upper surface Pu of the overhanging portion P may be located on an imaginary plane IPL parallel to the upper surface 100u of the substrate 100, or it may be located on a plane different from the imaginary plane IPL. The first angle θ between the upper surface Pu of the overhanging portion P and the imaginary plane IPL parallel to the upper surface 100u of the substrate 100 may have a range of about 0° to about 40° (e.g., 0°≤θ≤40°).

[0181] In one or more embodiments, the overhang portion P of each of the second layers 1200 may be inclined downward toward the groove G. As an example, the first angle θ between the upper surface Pu of the overhang portion P and the imaginary plane IPL parallel to the upper surface 100u of the substrate 100 may be greater than about 0° and may be equal to or less than about 40° (e.g., 0° < θ ≤ 40°). As an example, such as... Figure 8 As shown, the first angle θ can be greater than about 0° and can be equal to or less than about 30° (0° < θ ≤ 30°).

[0182] In one or more other embodiments, the first angle θ may be approximately 0°. For example, such as... Figure 9 As shown, the upper surface Pu of the overhanging portion P can be located on an imaginary plane IPL parallel to the upper surface 100u of the substrate 100.

[0183] As described above, when the first angle θ has a range of about 0° to about 40° (0° < θ ≤ 40°), the possibility of the overhang portion P being lifted off the first layer 1100 and separating from the first layer 1100 can be effectively reduced or prevented. Because the possibility of the overhang portion P being lifted is reduced or prevented, the peeling of the first inorganic encapsulation layer 310 and the second inorganic encapsulation layer 330 can be reduced or prevented.

[0184] A protective layer 1115 may be located on the second layer 1200. The protective layer 1115 is located on the overhang portion P and may be in direct contact with the overhang portion P. The protective layer 1115 may be located on the upper surface Pu and side surfaces Ps of the overhang portion P. The protective layer 1115 may extend to overlap with the side surfaces 1100s of the first layer 1100 and with the upper surface of the inorganic insulating structure IL. The protective layer 1115 may reduce or prevent [damage / contamination] during the manufacture of the display panel 10 (see [reference]). Figure 7 The possibility that the length of the overhang P (e.g., the eaves length) may be shortened during the process due to damage to the overhang P.

[0185] The protective layer 1115 may include a conductive material, such as that used with the pixel electrode 221 (see [link]). Figure 6 The same material. Protective layer 1115 can be formed by a deposition process. The material forming protective layer 1115 can be deposited inside the groove G, and as... Figure 8 and Figure 9 As shown, a first protective material layer 1116, identical to the protective layer 1115, may be present at the bottom of the groove G.

[0186] As referenced above Figure 7 Described, in organic light-emitting diode OLED (see Figure 6 The organic material layers included in the structure (e.g., the first functional layer 222a and the second functional layer 222c) can be divided into multiple parts by the overhanging structure OHS. For example... Figure 8 and Figure 9 As shown, each of the first functional layer 222a and the second functional layer 222c may include a portion located on the overhang portion P and a portion located inside the groove G. A portion of the first functional layer 222a and the second functional layer 222c may be located on the protective layer 1115 above the overhang portion P, and another portion of the first functional layer 222a and the second functional layer 222c may be located at the bottom of the groove G, on the first protective material layer 1116.

[0187] Similarly, the counter electrode 223 can be divided into multiple parts. For example... Figure 8 and Figure 9As shown, counter electrode 223 may include a portion located on the overhang portion P and a portion located inside the groove G. A portion of counter electrode 223 may be located on a portion of each of the first functional layer 222a and the second functional layer 222c, and another portion of counter electrode 223 may be located on the bottom of the groove G and on another portion of each of the first functional layer 222a and the second functional layer 222c.

[0188] Because the first inorganic encapsulation layer 310 has a suitable step coverage, the first inorganic encapsulation layer 310 can extend continuously without being interrupted by the overhanging structure OHS, such as... Figure 8 and Figure 9 As shown in the figure. As an example, the first inorganic encapsulation layer 310 may extend continuously to overlap with the upper surface Pu, side surface Ps, and bottom surface Pb of the overhang portion P. In one or more embodiments, the upper surfaces of the first inorganic encapsulation layer 310 may contact each other between adjacent overhang portions P. In this case, in the cross-sectional view, there may be... Figure 8 The cavity CV is shown in the figure. In one or more other embodiments, such as Figure 9 As shown, the cavity CV can be omitted depending on the thickness of the first inorganic encapsulation layer 310 and / or the gap between the overhang portion P.

[0189] Because the second inorganic encapsulation layer 330 has a suitable step coverage, it can extend continuously without being broken by the overhanging structure OHS. For example... Figure 8 and Figure 9 As shown, the second inorganic encapsulation layer 330 can be Figure 7 Some of the overhanging structures OHS shown in the figure are in direct contact with the first inorganic encapsulation layer 310.

[0190] Figure 10A This is a cross-sectional view of a portion of a display panel 10 according to one or more embodiments, and is Figure 8 A magnified view of region XA, and Figure 10B It corresponds to and Figure 10A A cross-sectional view of a portion of the display panel 10 according to one or more other embodiments, corresponding to one or more modified embodiments.

[0191] refer to Figure 10A and Figure 10B The second layer 1200 may include multiple sublayers 1201, 1202, and 1203 containing different corresponding materials. As an example, the first sublayer 1201 of the second layer 1200 may be a titanium layer, the second sublayer 1202 may be an aluminum layer, and the third sublayer 1203 may be a titanium layer.

[0192] In one or more embodiments, reference Figure 10A The protective layer 1115 can extend continuously from the upper surface Pu of the overhang portion P to the side surface Ps to cover the side surface Ps of the overhang portion P of the second layer 1200, for example, the side surfaces of each of the first to third sub-layers 1201, 1202 and 1203.

[0193] In one or more other embodiments, because the etch selectivity of the first to third sublayers 1201, 1202, and 1203 differs from each other, the side surfaces Ps of the overhang portion P can have irregularities during the process of forming the second layer 1200, such as... Figure 10B As shown in the figure. Due to irregularity, a portion of the protective layer 1115 formed on the second layer 1200 on the upper surface Pu of the overhang portion P and a portion on the side surface Ps of the overhang portion P may be discontinuous.

[0194] Figure 11 This is a cross-sectional view of a portion of a display panel 10 according to one or more embodiments, and is Figure 7 An enlarged view of area XI. Figure 11 The overhanging structure OHS shown in the diagram is located in the display area DA (see [reference]). Figure 5 ) and the first partition wall 510 closest to the display area DA (see Figure 7 The overhanging structure OHS between )

[0195] refer to Figure 11 Located in display area DA (see Figure 5 ) and the first partition wall 510 (see Figure 7 The overhanging structure between the two OHS components can also have the above references. Figure 8 The same structure is described. The overhang structure OHS may include an overhang portion P protruding above the groove G of the first layer 1100.

[0196] In one or more embodiments, the upper surface 1100u of the first layer 1100 may be inclined downward toward the groove G. Therefore, the first vertical distance H1 from the upper surface of the inorganic insulating structure IL to the point where the side surface 1100s of the first layer 1100 intersects with the upper surface 1100u can be greater than the second vertical distance H2 from the upper surface of the inorganic insulating structure IL to the point where the inner surface 1100i of the first layer 1100 intersects with the bottom surface of the second layer 1200. Because the depth of the groove G is less than the thickness of the first layer 1100, the third vertical distance H3 from the upper surface of the inorganic insulating structure IL to the portion corresponding to the center of the groove G is less than the second vertical distance H2.

[0197] As referenced above Figure 8 and Figure 9The first angle θ between the upper surface Pu of the overhanging portion P of the second layer 1200 located on the first layer 1100 and the imaginary plane IPL parallel to the upper surface 100u of the substrate 100 can have a range of about 0° to about 40° (e.g., 0° ≤ θ ≤ 40°). In one or more embodiments, the first angle θ between the imaginary plane IPL and the upper surface Pu of each of the overhanging portions P can be, for example, 0° ≤ θ ≤ 30°.

[0198] Two second layers 1200 may be located on two opposite sides, with the groove G of the first layer 1100 interposed therebetween. Each of the second layers 1200 may include an overhanging portion P extending (or protruding) toward the groove G from a point where the lower surface of the second layer 1200 intersects the inner surface 1100i of the defining groove G of the first layer 1100. The length of the overhanging portion P may range from about 0.2 micrometers to about 0.4 micrometers.

[0199] The protective layer 1115 is located on the overhang portion P and can be in direct contact with the overhang portion P. The protective layer 1115 can be located on the upper surface Pu and the side surface Ps of the overhang portion P. The protective layer 1115 can extend to overlap with the side surface 1100s of the first layer 1100 and the upper surface of the inorganic insulating structure IL. The first protective material layer 1116 can include the same material as the protective layer 1115 and can be present at the bottom of the groove G.

[0200] As referenced above Figure 7 Described, in organic light-emitting diode OLED (see Figure 6 The organic material layers included in the structure (e.g., the first functional layer 222a and the second functional layer 222c) can be divided into multiple parts by the overhanging structure OHS. For example... Figure 11 As shown, each of the first functional layer 222a and the second functional layer 222c may include a portion located on the overhang portion P and a portion located inside the groove G. Similarly, the counter electrode 223 may be divided into multiple portions.

[0201] The protective layer 1115, the first functional layer 222a, the second functional layer 222c, and the counter electrode 223 on the suspended portion P are located on the upper surface Pu and the side surface Ps of the suspended portion P, and can be as described above. Figure 10A The description is continuous, or it may be as in the reference. Figure 10B The description is discontinuous.

[0202] Because the first inorganic encapsulation layer 310 has a suitable step coverage, the first inorganic encapsulation layer 310 can extend continuously without being interrupted by the overhanging structure OHS, such as... Figure 11 As shown in the image. Figure 11As shown, in the internal non-display area MA, the organic encapsulation layer 320 is located on the first inorganic encapsulation layer 310 and can overlap with the overhang structure OHS.

[0203] Figure 12 This is a cross-sectional view of a portion of a display panel 10 according to one or more other embodiments. Figure 12 This may correspond to one or more other embodiments. Figure 7 An enlarged view of area XI. Figure 12 The structure shown in the figure according to one or more embodiments is consistent with the above reference. Figure 11 The structures described are essentially the same, except that the upper surface 1100u of the first layer 1100 (see...) Figure 11 ) is basically non-existent (e.g., most of it is omitted).

[0204] refer to Figure 12 The side surface 1100s of the first layer 1100 and the inner surface 1100i of the defining groove G may intersect each other or may be very close to each other. The second layer 1200 may be located on the first layer 1100. (See above reference.) Figure 8 and Figure 9 As described, the first angle θ between the upper surface Pu of the overhanging portion P of the second layer 1200 and the imaginary plane IPL parallel to the upper surface 100u of the substrate 100 can have a range of about 0° to about 40° (e.g., 0° ≤ θ ≤ 40°). In an embodiment, the first angle θ can be, for example, 0° ≤ θ ≤ 30°.

[0205] Protective layer 1115, first functional layer 222a, second functional layer 222c and counter electrode 223 and the above reference Figure 11 The protective layer 1115, the first functional layer 222a, the second functional layer 222c, and the counter electrode 223 are described as identical. The first inorganic encapsulation layer 310 can extend continuously without being broken by the overhanging structure OHS. Figure 11 As shown, in the internal non-display area MA, the organic encapsulation layer 320 is located on the first inorganic encapsulation layer 310 and can overlap with the overhanging structure OHS. Figure 12 In the structure shown, with Figure 11 The structure with the same structure as the above reference Figure 11 The described structure is replaced.

[0206] Figure 13 This is a cross-sectional view of a portion of a display panel 10 according to one or more embodiments, and is Figure 7 A magnified view of region XIII, and Figure 14 This is a cross-sectional view of a portion of a display panel 10 according to one or more other embodiments, corresponding to one or more other embodiments. Figure 7 Enlarged view of region XIII.

[0207] refer to Figure 13 A trench TCH, having a shape recessed (indented) relative to the upper surface Ilu of the inorganic insulating structure IL, can be located in the inner non-display area MA. The trench region TRA is the area within which the trench TCH of the inner non-display area MA is located, and can be close to the opening region OA, as referenced above. Figure 7 The trench TCH can have a closed-loop shape that completely surrounds the opening region OA in a plan view.

[0208] The depth D of the trench TCH can be less than the sum of the thicknesses T of the inorganic insulating structures IL. In one or more embodiments, Figure 13 The diagram shows a trench TCH passing through the upper and lower surfaces of the third interlayer insulating layer 210, the upper and lower surfaces of the second gate insulating layer 209, and the upper surface of the second interlayer insulating layer 207, with the bottom surface of the trench TCH located between the upper and lower surfaces of the second interlayer insulating layer 207. However, this disclosure is not limited thereto. In one or more other embodiments, when the depth D of the trench TCH is less than the sum T of the thicknesses of the inorganic insulating structure IL, the trench TCH can be formed by removing a plurality of layers selected from those included in the inorganic insulating structure IL.

[0209] The insulating layer 110 can be positioned to overlap with the trench TCH. The trench TCH includes a first edge portion relatively close to the opening region OA (e.g., Figure 13 The left edge portion of the first edge portion and the second edge portion opposite to the first edge portion (e.g., Figure 13 The right edge portion of the inorganic insulating structure IL), and each of the first edge portion and the second edge portion may form a step difference relative to the upper surface of the inorganic insulating structure IL. The first edge portion (e.g., Figure 13 The left edge portion of the middle) is relatively close to the opening region OA, and the second edge portion (e.g., Figure 13 The right edge portion (in the image) is opposite to the first edge portion and can be relatively close to the display area DA (see [image]). Figure 5 ).

[0210] Insulation layer 110 can cover the step difference relatively close to the partition wall. As an example, Figure 13The diagram shows the insulating layer 110 overlapping the step difference of the second edge portion of the trench TCH near the third partition wall 530. The insulating layer 110 may cover the step difference of the second edge portion, for example, the step difference formed by the upper surface ILu of the inorganic insulating structure IL and the inner surface ILi of the inorganic insulating structure IL defining the trench TCH. A portion of the insulating layer 110 may be located on the upper surface of the inorganic insulating structure IL, and another portion may be located on the trench TCH. The insulating layer 110 may comprise an organic insulating material. In one or more embodiments, the insulating layer 110 may be formed simultaneously or substantially simultaneously with the formation of the first layer 1100 during the same process.

[0211] Metal layer 120 may be located on insulating layer 110. Metal layer 120 may include aluminum (Al), copper (Cu), and / or titanium (Ti), and may comprise a single layer or multiple layers containing the above materials. As an example, metal layer 120 may have a three-layer structure of titanium layer / aluminum layer / titanium layer.

[0212] The first overhang 120P of the metal layer 120 can protrude toward the trench TCH from the point where the forward-tapered side surface of the insulating layer 110 relative to the bottom of the defining trench TCH intersects with the lower surface of the metal layer 120. (Refer to the above reference) Figure 8 Similar to the overhang portion P described above, the length of the first overhang portion 120P can range from about 0.2 micrometers to about 0.4 micrometers.

[0213] The protective layer 1115 may be located on the side and top surfaces of the first overhang portion 120P, and may be in direct contact with the side and top surfaces of the first overhang portion 120P. In one or more embodiments, such as Figure 13 As shown, the protective layer 1115 can continuously cover the side and top surfaces of the first overhang portion 120P. In one or more other embodiments, as referenced... Figure 10B As described, the protective layer 1115 may be discontinuous on the side and top surfaces of the first overhang portion 120P.

[0214] The second protective material layer 1117 may be located on the side surface of the insulating layer 110 and the surface defining the bottom of the trench TCH. The second protective material layer 1117 may be in direct contact with the side surface of the insulating layer 110 and the surface defining the bottom of the trench TCH. The second protective material layer 1117 may be made of the same material as the protective layer 1115.

[0215] Due to the first overhang portion 120P, each of the first functional layer 222a, the second functional layer 222c, and the counter electrode 223 can be divided into multiple parts. For example... Figure 13As shown, each of the first functional layer 222a, the second functional layer 222c, and the counter electrode 223 may include a portion located on the first overhang portion 120P and a portion located at the bottom of the trench TCH. The portion of the first functional layer 222a located at the bottom of the trench TCH may be in direct contact with the surface defining the bottom of the trench TCH.

[0216] Similar to the above references Figure 8 and Figure 9 The upper surface of the described overhang portion P, the first overhang portion 120P, can be tilted downwards to have a corresponding angle (e.g., a preset angle) relative to an imaginary plane IPL that is substantially parallel to or parallel to the upper surface of the substrate 100. In one or more embodiments, as Figure 13 As shown, the first overhang portion 120P may extend toward the trench TCH and may slope downward. In one or more other embodiments, the upper surface of the first overhang portion 120P may lie on an imaginary plane IPL parallel to the upper surface of the substrate 100. The second angle Ф between the upper surface of the first overhang portion 120P and the imaginary plane IPL parallel to the upper surface of the substrate 100 may have a range of about 0° to about 40° (e.g., 0° ≤ Ф ≤ 40°). In one or more embodiments, the second angle Ф may have a range of about 0° to about 30° (e.g., 0° ≤ Ф ≤ 30°).

[0217] In one or more other embodiments, such as Figure 14 As shown, the upper surface of the first overhang portion 120P can extend toward the groove TCH and can be inclined upwards. Figure 14 As shown, the third angle ω between the upper surface of the first overhanging portion 120P and the imaginary plane IPL parallel to the upper surface of the substrate 100 can have a range greater than about 0° and equal to or less than about 10° (e.g., 0° < ω ≤ 10°). Figure 13 Similar to one or more corresponding embodiments, in the context of Figure 14 In one or more corresponding embodiments, compared to the case where the first overhang portion 120P is tilted downwards, the first overhang portion 120P may be relatively separated from the insulating layer 110 and lifted upwards, but the occurrence of the above problems can be reduced when the range of the third angle ω is satisfied.

[0218] Because the first inorganic encapsulation layer 310 has a suitable step coverage, the first inorganic encapsulation layer 310 can extend continuously without being interrupted by the overhanging structure OHS, such as... Figure 8 and Figure 9 As shown in the image.

[0219] like Figure 13As shown in the diagram, in one or more embodiments, because the display panel 10 includes a trench TCH, the opening area OA (see [reference]) can be reduced or prevented during the process of forming the display panel 10. Figure 7 The cracks appearing around the display area DA (see...) Figure 7 The propagation of cracks can be prevented or reduced by the structure of the trench TCH. The insulating layer 110 overlapping the trench TCH and the second protective material layer 1117, including conductive material, can absorb the propagation of cracks towards the display area DA (see [link]). Figure 7 The impact of the spread can be reduced or minimized.

[0220] Figures 15A to 15G This is a cross-sectional view of the internal non-display area MA in the process of manufacturing the display panel 10 according to one or more embodiments.

[0221] refer to Figure 15A An inorganic insulating structure IL is formed on the substrate 100. The inorganic insulating structure IL may include a buffer layer 201, a first gate insulating layer 203, a first interlayer insulating layer 205, a second interlayer insulating layer 207, a second gate insulating layer 209, and a third interlayer insulating layer 210. The inorganic insulating structure IL may be formed in the display area DA (see [reference]). Figure 5 ), within the internal non-display area MA and the open area OA.

[0222] By removing a portion of the inorganic insulating structure IL, a trench TCH is formed in the trench region TRA, which is a portion of the internal non-display region MA adjacent to the opening region OA. The depth of the trench TCH can be less than the sum of the thicknesses of the inorganic insulating structure IL. The trench TCH can completely surround the opening region OA in a plan view.

[0223] refer to Figure 15B Multiple overhanging structures OHS are formed in the internal non-display area MA. The overhanging structures OHS can be formed in a multilayer 1000 including a first layer 1100 and a second layer 1200. Overhanging portions (e.g., first overhanging portion 120P) are formed on an insulating layer 110 and in a metal layer 120. The insulating layer 110 can overlap with the trench TCH.

[0224] The insulating layer 110 is formed to overlap the step difference between the upper surface of the inorganic insulating structure IL and the trench TCH. The metal layer 120 on the insulating layer 110 may include a first overhang portion 120P. The corresponding structure of the insulating layer 110 overlapping the trench TCH and the metal layer 120 can be compared with a reference... Figure 13 and Figure 14 The structures described are identical. The insulating layer 110 and the metal layer 120 can be formed separately during the same process as the formation of the first layer 1100 and the second layer 1200.

[0225] The first layers 1100 may be separated from each other in the inner non-display area MA. Each of the first layers 1100 may include a recess G, and a second layer 1200 including a hanging portion P protruding above the recess G may be located on two opposite sides around the recess G. The second layer 1200 may extend through the side surfaces of the first layers 1100 and may be in direct contact with the upper surface of the inorganic insulating structure IL (e.g., the upper surface of the third interlayer insulating layer 210).

[0226] refer to Figure 15C A protective layer 1115 may be formed on the first overhang portion 120P and the overhang portion P. The protective layer 1115 may include a conductive material. The protective layer 1115 may be formed during the process of forming the pixel electrode 221. The protective layer 1115 may include the same material as the pixel electrode 221. The material forming the protective layer 1115 may be deposited in the inner non-display area MA. Accordingly, due to the overhang portion P, a first protective material layer 1116 may be inside the groove G, wherein the first protective material layer 1116 is separate from and includes the same material as the protective layer 1115. A second protective material layer 1117 may be formed in the trench TCH, wherein the second protective material layer 1117 includes the same material as the protective layer 1115. The second protective material layer 1117 may be in direct contact with the surface defining the bottom of the trench TCH and the side surface of the insulating layer 110.

[0227] refer to Figure 15D The first partition wall 510, the second partition wall 520 and the third partition wall 530, which are separated from each other, can be formed in the internal non-display area MA.

[0228] Each of the first partition wall 510, the second partition wall 520, and the third partition wall 530 can completely surround the opening area OA in the plan view. The first partition wall 510 can be relatively close to the display area DA (see...). Figure 5 Furthermore, the third partition wall 530 can be relatively close to the opening area OA.

[0229] The first partition wall 510 may be located between the two suspended structures OHS and may overlap (or cover) the end of the second layer 1200. The first partition wall 510 may overlap (or cover) the end of the protective layer 1115 on the second layer 1200. The second partition wall 520 may be located between the two suspended structures OHS and may overlap (or cover) the end of the second layer 1200. The second partition wall 520 may overlap (or cover) the end of the protective layer 1115 on the second layer 1200. The third partition wall 530 may be located at the connection between the metal layer 120 and the second layer 1200.

[0230] The width of the second partition 520 may be smaller than the width of the first partition 510, and the width of the third partition 530 may be smaller than the width of the second partition 520. Each of the first partition 510, the second partition 520, and the third partition 530 may include an organic insulating material. Each of the first partition 510, the second partition 520, and the third partition 530 may be connected to the display area DA (see [link to relevant documentation]). Figure 5 ) 215 (see ) Figure 6 ) and / or spacer 217 (see Figure 6 (Includes the same materials.)

[0231] refer to Figure 15E Organic light-emitting diodes (OLEDs) can be formed (see...) Figure 6 The first functional layer 222a, the second functional layer 222c, and the counter electrode 223 are formed by thermal deposition. Each of the first functional layer 222a, the second functional layer 222c, and the counter electrode 223 can also be deposited on the inner non-display area MA. However, due to the roof structure of the first overhang portion 120P and the overhang portion P formed in the inner non-display area MA, each of the first functional layer 222a, the second functional layer 222c, and the counter electrode 223 can be divided into multiple parts. Therefore, external moisture passes through the first functional layer 222a, the second functional layer 222c, and the counter electrode 223 towards the organic light-emitting diode OLED (see [link]). Figure 6 The spread can be reduced or prevented.

[0232] Regarding this, Figure 15EThe diagram shows that each of the first functional layer 222a and the second functional layer 222c includes a portion located on the overhang portion P, a portion at the bottom of the groove G, a portion located on the first overhang portion 120P, and a portion located at the bottom of the trench TCH. Similarly, the counter electrode 223 may also include a portion located on the overhang portion P, a portion at the bottom of the groove G, a portion located on the first overhang portion 120P, and a portion located at the bottom of the trench TCH.

[0233] refer to Figure 15F An encapsulation layer 300 can be formed. The first inorganic encapsulation layer 310 can be formed by chemical vapor deposition. Because the first inorganic encapsulation layer 310 has relatively excellent step coverage, it can continuously cover the upper, side, and bottom surfaces of the first overhang portion 120P and the overhang portion P without being separated from them. The first inorganic encapsulation layer 310 can continuously cover the upper, side, and bottom surfaces of the first overhang portion 120P and the overhang portion P. The first inorganic encapsulation layer 310 can also continuously cover the side and upper surfaces of the first to third partition walls 510, 520, and 530.

[0234] The organic encapsulation layer 320 can then be formed by coating and curing monomers. The first to third partitions 510, 520, and 530 are designed to control the flow of monomers. In one or more embodiments, as... Figure 15F As shown, the edge of the organic encapsulation layer 320 may be located on one side of the first partition wall 510. In one or more other embodiments, a portion of the organic encapsulation layer 320 may be present between the first partition wall 510 and the second partition wall 520.

[0235] The second inorganic encapsulation layer 330 can be formed on the organic encapsulation layer 320 and can be in direct contact with the first inorganic encapsulation layer 310 in the internal non-display area MA.

[0236] refer to Figure 15F and Figure 15G When a component located in the opening region OA is removed along the cutting line CL using a laser beam or the like, an opening 10OP of the display panel 10 can be formed in the opening region OA.

[0237] Cracks may appear around the opening region OA due to impacts that occur during the cutting process that removes components located in the opening region OA. Although cracks or impacts may propagate toward the display region DA, damage to the display panel 10 due to cracks or impacts can be reduced or prevented because the display panel 10 includes a trench TCH structure. The insulating layer 110 and the second protective material layer 1117 overlapping with the trench TCH can, together with the trench TCH, reduce or prevent damage to the display panel 10 due to cracks or impacts.

[0238] The display panel according to the disclosed embodiments can reduce or prevent problems such as cracks in non-display areas. The display panel according to the disclosed embodiments can reduce or prevent the inorganic encapsulation layer from peeling off around the opening areas. The display panel according to the disclosed embodiments can reduce or prevent external impurities such as moisture around the opening areas from damaging the display elements. However, these aspects are provided as examples, and aspects according to the embodiments are described in detail above.

[0239] It should be understood that the embodiments described herein should be considered in a descriptive sense only and not for limiting purposes. The description of features or aspects within each embodiment should generally be considered applicable to other similar features or aspects in other embodiments. Although one or more embodiments have been described with reference to the accompanying drawings, those skilled in the art will understand that various changes in form and detail may be made in one or more embodiments without departing from the spirit and scope defined by the claims (the functional equivalence of which is included therein).

Claims

1. A display panel, comprising: a substrate including an upper surface and a lower surface opposite to the upper surface, and defining an opening passing through the upper surface and the lower surface; an inorganic insulating structure including an inorganic insulating layer over the upper surface of the substrate; light emitting diodes over an upper surface of the inorganic insulating structure, and defining a display area surrounding the opening in a plan view; an encapsulation layer over the light emitting diodes, and including an inorganic encapsulation layer and an organic encapsulation layer; a trench in a non-display area between the opening of the substrate and the display area, and being recessed to have a step difference with respect to the upper surface of the inorganic insulating structure; an insulating layer covering the step difference; and a metal layer over the insulating layer, and including a first overhang portion protruding toward the trench than a side surface of the insulating layer. The insulating layer includes an organic insulating material.

2. The display panel of claim 1, wherein, One of the light emitting diodes includes a pixel electrode, a counter electrode over the pixel electrode, and an intermediate layer between the pixel electrode and the counter electrode, and 3. The display panel of claim 1, wherein, wherein the intermediate layer includes at least one organic material layer including a first portion on the first overhang portion and a second portion at a bottom of the trench and separated from the first portion by the first overhang portion. 4.The display panel of claim 1, further comprising: a protective layer over the first overhang portion. 5.The display panel of claim 4, further comprising: a protective material layer in the trench, separated from the protective layer, and including a same material as the protective layer, wherein the side surface of the insulating layer is inclined with respect to a bottom of the trench, and wherein the protective material layer directly contacts the side surface of the insulating layer. The protective layer includes a conductive material.

6. The display panel of claim 4, wherein, An upper surface of the first overhang portion is parallel to or downwardly inclined from the substrate.

7. The display panel of claim 1, wherein, 8.The display panel of claim 1, further comprising: a barrier wall in the non-display area, surrounding the opening of the substrate in the plan view, and between the trench and the display area. 9.The display panel of claim 1, further comprising: a first layer between the trench and the display area, including a same material as the insulating layer, and defining a groove in the first layer; and a pair of second layers over the first layer, including a same material as the metal layer, and including an overhang portion protruding toward the groove from a point where a lower surface of one of the second layers intersects with an inner surface of a portion of the first layer defining the groove. 10.An electronic device, comprising: a display panel, the display panel including: an opening area; a display area surrounding the opening area in a plan view; a substrate including an upper surface and a lower surface opposite to the upper surface, and defining an opening passing through the upper surface and the lower surface and corresponding to the opening area; an inorganic insulating structure including an inorganic insulating layer over the upper surface of the substrate; and a light emitting diode over an upper surface of the inorganic insulating structure. ​ a light emitting diode over an upper surface of the inorganic insulating structure and defining the display area; a packaging layer over the light emitting diode and including an inorganic packaging layer and an organic packaging layer; a trench in a non-display area between the opening of the substrate and the display area and defined recessed with a step difference with respect to the upper surface of the inorganic insulating structure; an insulating layer covering the step difference; and a metal layer over the insulating layer and including a first overhanging portion protruding toward the trench than a side surface of the insulating layer, and a component under the display panel and overlapping the opening area of the display panel. 11.The electronic device of claim 10, wherein The insulating layer includes an organic insulating material. 12.The electronic device of claim 10, wherein, One of the light emitting diodes includes a pixel electrode, a counter electrode over the pixel electrode, and an intermediate layer between the pixel electrode and the counter electrode, and wherein the intermediate layer includes at least one organic material layer including a first portion on the first overhanging portion and a second portion at a bottom of the trench and separated from the first portion by the first overhanging portion. 13.The electronic device of claim 10, wherein The display panel further includes: a protective layer over the first overhanging portion. 14.The electronic device of claim 13, wherein, The display panel further includes: a protective material layer in the trench, separated from the protective layer, and including a same material as the protective layer, wherein the side surface of the insulating layer is inclined with respect to a bottom of the trench, and wherein the protective material layer directly contacts the side surface of the insulating layer. 15.The electronic device of claim 13, wherein The protective layer includes a conductive material. 16.The electronic device of claim 10, wherein, An upper surface of the first overhanging portion is parallel or downwardly inclined with respect to the substrate. 17.The electronic device of claim 10, wherein The display panel further includes: a barrier wall in the non-display area, surrounding the opening of the substrate in the plan view, and between the trench and the display area. 18.The electronic device of claim 10, wherein, The display panel further includes: a first layer between the trench and the display area and defining a recess in the first layer; and a pair of second layers over the first layer and including an overhanging portion protruding toward the recess from a point where a lower surface of one of the second layers intersects an inner surface of a portion of the first layer defining the recess. 19.The electronic device of claim 18, wherein, The first layer includes a same material as the insulating layer, and wherein the second layers include a same material as the metal layer. 20.The electronic device of any one of claims 10-19, wherein, The component includes a camera or a sensor.

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