Perovskite cell and preparation method thereof, photovoltaic module and power utilization device

Abstract

The invention relates to a perovskite cell, a preparation method thereof, a photovoltaic module and an electric device. The preparation method of the perovskite cell comprises the following steps: arranging a self-assembled monomolecular material on a substrate to prepare a hole transport layer; the self-assembled monomolecular material has a C-H bond and a phosphonic acid group; arranging an interface precursor material on the hole transport layer, and preparing an interface layer through light treatment; the interface precursor material comprises an amino group and an azide group; and preparing a perovskite layer on the interface layer. The preparation method of the perovskite cell can effectively improve the photoelectric conversion efficiency of the perovskite cell.

Description

Technical Field

[0001] This application relates to the field of photovoltaic technology, and in particular to perovskite cells and their preparation methods, photovoltaic modules and electrical devices. Background Technology

[0002] Self-assembled monolayers (SAMs), as a cutting-edge material system integrating organic chemistry, nanotechnology, and photovoltaic technology, have become one of the core research directions in the field of interface engineering for perovskite solar cells due to their unique advantages such as molecular-level ordered arrangement, strong interfacial bonding, and precise functional tunability. In perovskite cells, SAMs materials can form chemical bonds with the electrode / transport layer substrate through anchoring groups, and achieve perovskite surface defect passivation, interface energy level matching optimization, and charge transport dynamics regulation through functional groups. However, the photoelectric conversion efficiency of traditional SAMs-based perovskite solar cells still needs further improvement. Summary of the Invention

[0003] Based on this, this application provides a perovskite cell that can effectively improve photoelectric conversion efficiency, a method for preparing the same, a photovoltaic module, and an electrical device.

[0004] The technical solution to the above-mentioned technical problems in this application is as follows.

[0005] The first aspect of this application provides a method for preparing a perovskite solar cell, comprising the following steps:

[0006] A hole transport layer is prepared by depositing a self-assembled monomolecule material on a substrate; the self-assembled monomolecule material has CH bonds and phosphonic acid groups.

[0007] An interface precursor material is deposited on the hole transport layer, and the interface layer is prepared by photoprocessing; the interface precursor material includes amino and azide groups.

[0008] A perovskite layer is prepared on the interface layer.

[0009] In some embodiments, the perovskite solar cell preparation method includes an interface precursor material comprising a compound with the structural formula N3-L-NH2, where L is C2~C6. 10 Alkylene.

[0010] In some embodiments, the interface precursor material in the method for preparing perovskite solar cells includes materials with the structural formula N3-(CH2). n Compounds of -NH2, where n is an integer from 2 to 10.

[0011] In some embodiments, the interface precursor material in the method for preparing perovskite solar cells includes at least one of 2-azidoethylamine, 3-azidopropylamine, 4-azido-1-butylamine, and 5-azidopentane-1-amine.

[0012] In some embodiments, the light treatment in the fabrication method of perovskite solar cells includes UV treatment.

[0013] In some embodiments, the method for preparing perovskite solar cells satisfies at least one of the following characteristics:

[0014] (1) The light intensity of the UV treatment is 10 mW / cm 2 ~50 mW / cm 2 ;

[0015] (2) The UV treatment time is 1 min to 10 min;

[0016] (3) The thickness of the interface layer is 0.1 nm to 2 nm.

[0017] In some embodiments, the method for preparing perovskite solar cells satisfies at least one of the following characteristics:

[0018] (1) The method of depositing the interface precursor material on the hole transport layer includes the solution method;

[0019] (2) After the light treatment, the method further includes: annealing the intermediate obtained by the light treatment to prepare the interface layer.

[0020] In some embodiments, the annealing treatment in the method for preparing perovskite solar cells satisfies at least one of the following characteristics:

[0021] (1) The annealing temperature is 90℃~100℃ and the time is 5 min~15 min;

[0022] (2) The annealing atmosphere is an inert atmosphere.

[0023] In some embodiments, the self-assembled single-molecule material in the perovskite solar cell preparation method includes at least one of Me-4PACz, 2PACz, MeO-2PACz, and 4PADCB.

[0024] In some embodiments, the method for preparing a perovskite solar cell, after preparing the perovskite layer, further includes:

[0025] A passivation layer, an electron transport layer, a buffer layer, and an electrode are sequentially fabricated on the perovskite layer.

[0026] The preparation method satisfies at least one of the following characteristics:

[0027] (1) The passivation layer comprises at least one of guanidine iodide, oleamide iodate, 2-thiophene ethylamine hydrochloride, isobutylamine iodate and n-butylamine hydrochloride;

[0028] (2) The electron transport layer includes at least one of fullerene and its derivatives;

[0029] (3) The buffer layer comprises at least one of copper bath and tin dioxide;

[0030] (4) The electrode is selected from one of transparent conductive oxide electrodes and metal electrodes;

[0031] (5) The structure of the perovskite layer is ABX3, where A includes Cs i 、Rb + MA + and FA + At least one of them, B includes Pb 2 + Cu 2+ Zn 2+ Ga 2+ Sn 2+ and Ca 2+ At least one of them, X includes I - ,Br - Cl - F - and SCN - At least one of them.

[0032] In some embodiments, the substrate in the perovskite solar cell fabrication method is selected from either a transparent conductive oxide electrode or a crystalline silicon solar cell.

[0033] The second aspect of this application provides a perovskite solar cell, which is prepared using the perovskite solar cell preparation method provided in the first aspect.

[0034] A third aspect of this application provides a perovskite solar cell, comprising a substrate, a hole transport layer, an interface layer, a perovskite layer, and an electrode stacked sequentially. The hole transport layer comprises a self-assembled monomolecule material having CH bonds and phosphonic acid groups. The raw materials for preparing the interface layer include amino and azide groups.

[0035] The fourth aspect of this application provides a photovoltaic module, including the perovskite cell provided in the second or third aspect.

[0036] The fifth aspect of this application provides an electrical device, including the perovskite cell provided in the second or third aspect or the photovoltaic module provided in the fourth aspect.

[0037] The method for preparing perovskite solar cells in this application involves depositing an interfacial precursor material comprising amino and azido groups onto a hole transport layer. Since the hole transport layer includes self-assembled monomolecules with CH bonds and phosphonic acid groups, the amino groups in the interfacial precursor material and the phosphonic acid groups in the self-assembled monomolecules can achieve stable bonding through NH…O=P hydrogen bonding, allowing the interfacial precursor material to adsorb onto one end of the self-assembled monomolecules. Simultaneously, the azido groups in the interfacial precursor material undergo photolysis after phototreatment to generate nitrogenate radicals. These nitrogenate radicals insert into the CH bonds of adjacent self-assembled monomolecules, causing cross-linking between the interfacial precursor material and the self-assembled monomolecules in the hole transport layer, forming a stable interfacial network structure. Furthermore, the amino groups exhibit an electron-donating effect, shifting the highest occupied molecular orbital energy level of the hole transport layer upwards, enhancing its energy level matching with the perovskite valence band, and reducing the hole extraction barrier. Additionally, the amino groups can interact with uncoordinated divalent cations (B2Cs) on the surface of the perovskite (ABX3). 2+ The formation of BN coordination bonds passivates deep-level defects on the perovskite surface, neutralizes positively charged interstitial defects of X elements in the perovskite lattice, and reduces interfacial recombination centers; in addition, the nitrogen bene radicals generated by the photolysis of azide groups can capture interfacial dangling bonds and form a stable CNB structure; the synergistic effect of multiple aspects can effectively improve the photoelectric conversion efficiency and stability of perovskite solar cells. Attached Figure Description

[0038] To more clearly illustrate the technical solutions in the specific embodiments of this application or the prior art, the drawings used in the description of the specific embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are some embodiments of this application. For those skilled in the art, other drawings can be obtained from these drawings without creative effort.

[0039] Figure 1 This is a schematic diagram of the crosslinking of interfacial precursor materials and self-assembled monomolecule materials provided in some examples. Detailed Implementation

[0040] The present application will be further described in detail below with reference to the accompanying drawings, embodiments, and examples. It should be understood that these embodiments and examples are for illustrative purposes only and are not intended to limit the scope of the application. The purpose of providing these embodiments and examples is to enable a more thorough and comprehensive understanding of the disclosure of the present application. It should also be understood that the present application can be implemented in many different forms and is not limited to the embodiments and examples described herein. Those skilled in the art can make various modifications or alterations without departing from the spirit of the present application, and the equivalent forms obtained also fall within the protection scope of the present application. For example, features described or illustrated as part of one embodiment can be combined in a suitable manner in another embodiment to produce new embodiments. Furthermore, numerous specific details are set forth in the following description to provide a fuller understanding of the present application. It should be understood that the present application can be implemented without one or more of these details.

[0041] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used herein in the specification of this application is for descriptive purposes only and is not intended to be limiting of the application.

[0042] Unless otherwise stated or in case of contradiction, the terms or phrases used herein shall have the following meanings:

[0043] In this application, the terms "multiple", "various", "multiple times", etc., unless otherwise specified, refer to a quantity greater than or equal to 2. For example, "one or more" means one or more than or equal to two.

[0044] The terms “combinations of,” “any combination of,” and “any combination of” used in this article include all suitable combinations of any two or more of the listed items.

[0045] In this document, the term "suitable" as used in "suitable combination", "suitable method", "any suitable method", etc., refers to the ability to implement the technical solution of this application, solve the technical problem of this application, and achieve the expected technical effect of this application.

[0046] In this document, terms such as "preferred," "better," "more suitable," and "ideal" are merely descriptions of more effective implementation methods or embodiments, and should be understood not to limit the scope of protection of this application. If multiple "preferred" terms appear in a technical solution, unless otherwise specified and there are no contradictions or mutual constraints, each "preferred" term shall be independent.

[0047] In this application, terms such as "further," "even further," and "particularly" are used to describe purposes and indicate differences in content, but should not be construed as limiting the scope of protection of this application.

[0048] In this application, "optionally," "optionally," and "optional" mean that something is optional, that is, it means that it is selected from either "with" or "without." If there are multiple "optional" entries in a technical solution, unless otherwise specified, and there are no contradictions or mutual constraints, each "optional" entry shall be independent.

[0049] In this application, the terms "first aspect," "second aspect," "third aspect," "fourth aspect," etc., are used for descriptive purposes only and should not be construed as indicating or implying relative importance or quantity, nor should they be construed as implicitly indicating the importance or quantity of the indicated technical features. Moreover, "first," "second," "third," "fourth," etc., serve only as a non-exhaustive enumeration and should be understood not to constitute a closed limitation on quantity.

[0050] In this application, the technical features described in an open-ended manner include both closed technical solutions consisting of the listed features and open technical solutions that include the listed features.

[0051] In this application, when numerical intervals (i.e., numerical ranges) are mentioned, unless otherwise specified, the distribution of selectable numerical values ​​within the numerical interval is considered continuous, and includes the two endpoints of the numerical interval (i.e., the minimum and maximum values), as well as every numerical value between these two endpoints. Unless otherwise specified, when a numerical interval refers only to integers within that numerical interval, it includes the two endpoint integers of the numerical range, as well as every integer between the two endpoints, which is equivalent to directly listing every integer. When multiple numerical ranges are provided to describe features or characteristics, these numerical ranges can be merged. In other words, unless otherwise specified, the numerical ranges disclosed herein should be understood to include any and all subranges included therein. The "numerical value" in the numerical interval can be any quantitative value, such as a number, percentage, ratio, etc. The term "numerical interval" can be broadly included to include numerical interval types such as percentage intervals, ratio intervals, and proportion intervals.

[0052] Unless otherwise specified, the temperature parameters in this application are permitted to be either constant-temperature treatment or variations within a certain temperature range. It should be understood that the constant-temperature treatment allows temperature fluctuations within the precision range of the instrument control, such as ±5℃, ±4℃, ±3℃, ±2℃, or ±1℃.

[0053] In this application, the terms "room temperature" or "normal temperature" generally refer to 4℃ to 35℃, for example, 20℃ ± 5℃. In some embodiments of this application, "room temperature" or "normal temperature" refers to 10℃ to 30℃. In some embodiments of this application, "room temperature" or "normal temperature" refers to 20℃ to 30℃.

[0054] In this application, if the unit of a data range is only followed by the right endpoint, it indicates that the units of the left and right endpoints are the same. For example, 3~5 h means that the units of the left endpoint "3" and the right endpoint "5" are both h (hours).

[0055] The mass or weight of the relevant components mentioned in the embodiments of this application can refer not only to the specific content of each component, but also to the proportional relationship of mass or weight between the components. Therefore, any scaling up or down of the content of the relevant components according to the embodiments of this application is within the scope disclosed in the embodiments of this application. Specifically, the mass or weight mentioned in the embodiments of this application can be units known in the chemical industry, such as μg, mg, g, and kg.

[0056] One embodiment of this application provides a method for preparing a perovskite solar cell, comprising the following steps:

[0057] Step S100: A hole transport layer is prepared by depositing a self-assembled monomolecule material on a substrate; the self-assembled monomolecule material has CH bonds and phosphonic acid groups;

[0058] Step S200: The interface precursor material is deposited on the hole transport layer and then photoprocessed to prepare the interface layer; the interface precursor material includes amino and azide groups.

[0059] Step S300: Prepare a perovskite layer on the interface layer.

[0060] The method for preparing perovskite solar cells in this application has the following beneficial effects:

[0061] (1) Crosslinking reinforcement of SAM layer

[0062] Alkylamines containing both amino (-NH2) and azide (-N3) groups are deposited on the surface of the hole transport layer. The -NH2 group is adsorbed onto one end of the SAM molecule through the bonding of the -NH2 group with the phosphonic acid group in the SAM molecule. After phototreatment, the photolysis of -N3 generates nitrogen ben radicals (-N:). The -N: radicals insert into the CH bonds of the adjacent SAM molecule, thereby achieving cross-linking of the SAM molecular layer.

[0063] (2) Synergistic passivation of perovskite / SAM interface defects

[0064] The dual role of amino groups: They interact with uncoordinated divalent cations (B) on the perovskite (ABX3) surface. 2+ Forming BN coordination bonds, for example, with uncoordinated Pb on the perovskite surface. 2+It forms Pb-N coordination bonds, passivates deep-level defects on the perovskite surface, and neutralizes positively charged interstitial defects of X elements in the perovskite lattice, such as neutralizing positively charged iodine interstitials (I₂) in the perovskite lattice. i+ ), reduce the number of interface composite centers.

[0065] Azide-assisted passivation: The nitro group generated after photolysis can capture interfacial dangling bonds to form a stable CNB structure, such as the CN-Pb structure.

[0066] (3) Energy level matching optimization (improving hole extraction efficiency)

[0067] The amino group (-NH2) has an electron-donating effect, which slightly shifts the highest occupied molecular orbital (HOMO) energy level of the SAM layer upward; this makes the HOMO of the SAM more compatible with the perovskite valence band (VBM) and reduces the hole extraction barrier.

[0068] In some examples, taking 3-azidopropylamine as the interfacial precursor material, 4PACz as the self-assembled monomolecule material, and UV treatment as the phototreatment, a schematic diagram of the cross-linking interaction between the interfacial precursor material and the self-assembled monomolecule material in the hole transport layer is shown below. Figure 1 As shown.

[0069] Among them, self-assembled single-molecule materials (SAMs) have the following advantages:

[0070] (1) SAMs can modify the interface between perovskite and substrate to reduce defect state density, thereby improving charge separation efficiency and reducing recombination loss;

[0071] (2) SAMs can form a protective film on the semiconductor surface, which helps to passivate surface dangling bonds and active sites, reduce nonradiative recombination of charge carriers, and improve the open-circuit voltage and fill factor of the device;

[0072] (3) Since perovskite materials are sensitive to environmental factors (such as humidity, light, etc.), SAMs can provide protection to prevent moisture intrusion and other adverse conditions, thereby extending the battery's lifespan.

[0073] (4) The appropriate types of SAMs in this application can improve the contact characteristics between the perovskite and the substrate without increasing the resistance, which is beneficial to the effective transport of charge carriers and improves the overall photoelectric conversion efficiency.

[0074] It is difficult for single SAMs materials to achieve both high photoelectric conversion efficiency and stable performance in devices. By introducing an interface layer between SAMs and the perovskite layer, the photo-driven effect of the interface layer material can achieve cross-linking and covering of the intrinsic properties of SAM molecules. At the same time, its strong bonding effect can also optimize the deep-level defects of the perovskite material to achieve the effect of interface passivation.

[0075] The study found that, compared with mixing interface precursor materials with self-assembled monomolecule materials to prepare hole transport layers, introducing interface precursor materials as an interface layer between SAMs and perovskite layers has a better effect on improving the photoelectric conversion efficiency and stability of perovskite solar cells.

[0076] The study also found that when the above-mentioned interface precursor materials are mixed with perovskite precursor materials to prepare perovskite layers, the addition of a small amount of interface precursor material has almost no effect on device efficiency, while the addition of a large amount may even have an adverse effect.

[0077] It is understood that the perovskite battery prepared by the method provided in this application is an inverted perovskite battery, and the above-mentioned interface precursor material is effective for SAMs with specific groups in the hole transport layer of the inverted perovskite battery.

[0078] In some examples, in step S200, the interfacial precursor material includes a compound with the structural formula N3-L-NH2, where L is C2~C2. 10 Alkylene.

[0079] It's understandable, C2~C 10 Alkylenes refer to groups formed by losing one hydrogen atom from an alkyl group with 2 to 10 carbon atoms. The number of carbon atoms includes 2, 3, 4, 5, 6, 7, 8, 9, or 10; in some examples, any two of these point values ​​can be used as end values, and the same applies below. It can also be understood that alkylenes with the same number of carbon atoms include multiple isomers; for example, when there are 2 carbon atoms, it includes ethylene (…). ), 1,2-ethylidene ( ).

[0080] In some of these examples, in step S200, the interface precursor material includes materials with the structural formula N3-(CH2). n Compounds with -NH2, where n is an integer from 2 to 10. This can be understood as N3-(CH2). n -NH2 represents a straight-chain alkylamine containing amino and azido groups. By using straight-chain alkylamine as the interface precursor material, the nitrogen-bene radicals generated by photo-treatment of the azido groups in the interface precursor material can be promoted to insert into the CH bonds of adjacent self-assembled monomolecules. This promotes cross-linking between the interface precursor material and the self-assembled monomolecules in the hole transport layer, thereby further improving the photoelectric conversion efficiency and stability of perovskite solar cells.

[0081] In some of these examples, in step S200, the interfacial precursor material includes at least one of 2-azidoethylamine, 3-azidopropylamine, 4-azido-1-butylamine, and 5-azidopentane-1-amine.

[0082] In some of these examples, step S200 involves performing light processing, including UV processing.

[0083] Optionally, the UV treatment light intensity is 10 mW / cm². 2 ~50 mW / cm 2 It is understood that the light intensity of UV treatment includes, but is not limited to, 10 mW / cm². 2 15 mW / cm 2 20 mW / cm 2 25 mW / cm 2 30 mW / cm 2 35 mW / cm 2 40 mW / cm 2 45mW / cm 2 50 mW / cm 2 .

[0084] Optionally, the UV treatment time is 1 min to 10 min; it is understood that the UV treatment time includes, but is not limited to, 1 min, 2 min, 3 min, 4 min, 5 min, 6 min, 7 min, 8 min, 9 min, and 10 min.

[0085] In some examples, in step S200, the thickness of the interface layer is 0.1 nm to 2 nm. It is understood that the thickness of the interface layer includes, but is not limited to, 0.1 nm, 0.2 nm, 0.3 nm, 0.4 nm, 0.5 nm, 0.6 nm, 0.7 nm, 0.8 nm, 0.9 nm, 1 nm, 1.1 nm, 1.2 nm, 1.3 nm, 1.4 nm, 1.5 nm, 1.6 nm, 1.7 nm, 1.8 nm, 1.9 nm, and 2 nm.

[0086] In some examples, step S200, the method of depositing the interface precursor material onto the hole transport layer includes a solution method. Optionally, the solution method includes, but is not limited to, at least one of spin coating and slot coating. It is understood that in some examples, after photoprocessing, step S200, where an interface precursor solution containing the interface precursor material is deposited onto the hole transport layer, further includes annealing the intermediate obtained from the photoprocessing to prepare the interface layer. Optionally, the annealing temperature is 90℃~100℃, and the time is 5 min~15 min. It is understood that the annealing temperature includes, but is not limited to, 90℃, 91℃, 92℃, 93℃, 94℃, 95℃, 96℃, 97℃, 98℃, 99℃, and 100℃, and the time includes, but is not limited to, 5 min, 6 min, 7 min, 8 min, 9 min, 10 min, 11 min, 12 min, 13 min, 14 min, and 15 min. Optionally, the annealing atmosphere is an inert atmosphere. Optionally, the inert atmosphere includes, but is not limited to, at least one of nitrogen and argon. Optionally, the solvent in the interfacial precursor solution includes, but is not limited to, at least one of ethanol, methanol, isopropanol, toluene, and chlorobenzene. Optionally, the concentration of the interfacial precursor material in the interfacial precursor solution is 0.05 mg / ml to 0.5 mg / ml. It is understood that the concentration of the interfacial precursor material in the interfacial precursor solution includes, but is not limited to, 0.05 mg / ml, 0.10 mg / ml, 0.15 mg / ml, 0.20 mg / ml, 0.25 mg / ml, 0.30 mg / ml, 0.35 mg / ml, 0.40 mg / ml, 0.45 mg / ml, and 0.50 mg / ml.

[0087] In some of these examples, in step S100, the self-assembled monomolecular material includes at least one of Me-4PACz ([4-(3,6-dimethyl-9H-carbazole-9-yl)butyl]phosphonic acid), 2PACz ([2-(9H-carbazole-9-yl)ethyl]phosphonic acid), MeO-2PACz ([2-(3,6-dimethoxy-9H-carbazole-9-yl)ethyl]phosphonic acid), and 4PADCB ([4-(7H-dibenzocarbazole-7-yl)butyl]phosphonic acid).

[0088] In some examples, in step S100, the thickness of the hole transport layer is 1 nm to 10 nm. It can be understood that the thickness of the hole transport layer includes, but is not limited to, 1 nm, 2 nm, 3 nm, 4 nm, 5 nm, 6 nm, 7 nm, 8 nm, 9 nm, and 10 nm.

[0089] In some examples, in step S100, the deposition of the self-assembled monomolecule material includes a solution method. Optionally, the solution method includes, but is not limited to, at least one of spin coating and slot coating.

[0090] In some examples, in step S100, the substrate is selected from either a transparent conductive oxide electrode or a crystalline silicon cell. It is understood that when the substrate is a transparent conductive oxide electrode, the perovskite cell is a perovskite single-junction cell; when the substrate is a crystalline silicon cell, the perovskite cell is a perovskite tandem cell. Further, the transparent conductive oxide electrode includes, but is not limited to, at least one of indium zinc oxide (IZO), tungsten-doped indium oxide (IWO), and aluminum-doped zinc oxide (AZO). Optionally, the crystalline silicon cell has a textured structure of 0.5 μm to 1 μm. Further, the crystalline silicon cell includes, but is not limited to, at least one of PERC cells (passivated emitter and back contact cells), IBC cells (interdigitated back contact cells), TOPCon cells (tunneling oxide passivated contact cells), HJT cells (heterojunction cells), and HBC cells (back contact heterojunction cells).

[0091] In some of these examples, in step S300, the perovskite layer has a structure of ABX3, where A includes Cs. + 、Rb + MA + and FA + At least one of them, B includes Pb 2+ Cu 2+ Zn 2+ Ga 2+ Sn 2+ and Ca 2+ At least one of them, X includes I - ,Br - Cl - F - and SCN - At least one of them.

[0092] In some of these examples, step S300, after preparing the perovskite layer, also includes: preparing an electrode.

[0093] In some examples, in step S300, the electrode is selected from a transparent conductive oxide electrode and a metal electrode. Optionally, the transparent conductive oxide electrode includes, but is not limited to, at least one of indium zinc oxide (IZO), tungsten-doped indium oxide (IWO), and aluminum-doped zinc oxide (AZO). Optionally, the metal electrode includes, but is not limited to, at least one of silver (Ag) and copper (Cu).

[0094] In some examples, step S300, after the perovskite layer is prepared and before the electrode is prepared, includes:

[0095] Step S310: Prepare an electron transport layer on the perovskite layer.

[0096] In some examples, in step S310, the electron transport layer includes at least one of fullerenes and their derivatives; optionally, fullerenes and their derivatives include, but are not limited to, C 60 C 70 At least one of PCBM.

[0097] It is understood that this application does not limit the preparation method of the electron transport layer, including but not limited to the evaporation method.

[0098] In some examples, step S300, after the perovskite layer is prepared and before the electron transport layer is prepared, includes:

[0099] Step S320: Prepare a passivation layer on the perovskite layer.

[0100] In some of these examples, in step S320, the passivation layer includes at least one of polydiallyldimethylammonium chloride (PDAD1), guanidine iodide (GUAl), oleylamine iodate, 2-thiophene ethylamine hydrochloride (TEACl), isobutylamine iodate (iso-BAI), and n-butylamine hydrochloride (BACl).

[0101] In some of these examples, in step S320, the passivation layer is prepared by at least one of spin coating, slot coating, and vapor deposition.

[0102] In some examples, step S300, after the electron transport layer is prepared and before the electrode is prepared, includes:

[0103] Step S330: Prepare a buffer layer on the electron transport layer.

[0104] In some of these examples, in step S330, the buffer layer comprises at least one of copper bath (BCP) and tin dioxide (SnO2).

[0105] In some of these examples, in step S330, the buffer layer is prepared by methods including, but not limited to, atomic layer deposition.

[0106] The method for preparing perovskite solar cells in this application constructs a high-density, thermally resistant SAM network through photo-driven crosslinking of azide groups, which effectively improves the photoelectric conversion efficiency and stability of perovskite solar cells.

[0107] One embodiment of this application provides a perovskite battery, which is prepared using the perovskite battery preparation method described above.

[0108] One embodiment of this application provides a perovskite solar cell, comprising a substrate, a hole transport layer, an interface layer, a perovskite layer, and an electrode stacked sequentially. The hole transport layer comprises a self-assembled monomolecule material having CH bonds and phosphonic acid groups. The raw materials for preparing the interface layer include amino and azide groups.

[0109] The perovskite solar cell provided in this application features interfacial passivation of amino groups to suppress nonradiative recombination at the perovskite / SAM interface; energy level fine-tuning and dipole enhancement; and optimized hole extraction kinetics, effectively improving the efficiency of SAM-based perovskite solar cells.

[0110] It is understandable that in the above-mentioned perovskite solar cell fabrication method, an interface precursor material is placed on the hole transport layer. The azide groups in the interface precursor material undergo photolysis after phototreatment to generate nitrogenide radicals. These nitrogenide radicals insert into the CH bonds of adjacent self-assembled monomolecules, causing cross-linking between the interface precursor material and the self-assembled monomolecules in the hole transport layer, forming a stable interface network structure. That is, in some examples, there is an interface network structure layer formed by the cross-linking of the interface precursor material and the self-assembled monomolecules between the interface layer and the hole transport layer.

[0111] One embodiment of this application provides a photovoltaic module including the perovskite cell described above.

[0112] It is understandable that photovoltaic (PV) modules can be used in PV power plants, such as ground-mounted, rooftop, and floating power plants, as well as in equipment or devices that utilize solar energy to generate electricity, such as user solar power supplies, solar streetlights, solar cars, and solar buildings. It is also understood that the application scenarios of PV systems include, but are not limited to, all areas that require solar energy for power generation. Taking a PV power grid as an example, a PV system can include PV arrays, combiner boxes, and inverters. A PV array can be a combination of multiple PV modules; for example, multiple PV modules can form multiple PV arrays. The PV arrays are connected to combiner boxes, which collect the current generated by the PV arrays. The collected current flows through an inverter, converts it into AC power required by the mains grid, and then connects to the mains grid to achieve solar power supply.

[0113] This application provides an electrical device, which can be, but is not limited to, mobile phones, tablets, laptops, electric toys, power tools, electric vehicles, electric cars, ships, spacecraft, etc. Electric toys can include stationary or mobile electric toys, such as game consoles, electric car toys, electric ship toys, and electric airplane toys, etc. Spacecraft can include airplanes, rockets, space shuttles, and spacecraft, etc.

[0114] The present application will be described in further detail below with reference to specific embodiments, but the embodiments of the present application are not limited thereto.

[0115] Example 1

[0116] (1) After cleaning the velvet bottom battery with an N2 gun, treat it with UV ozone for 15 min before use.

[0117] (2) Hole transport material 4PACz was deposited on the surface of the bottom cell by spin coating. The spin coating conditions were 4000r, 30s, and the concentration of 4PACz was 0.5mg / ml to obtain the hole transport layer.

[0118] (3) 3-Azidepropylamine, an interfacial precursor material, was deposited on the surface of the hole transport material by spin coating. The spin coating conditions were 4000 r for 30 s and the concentration of the interfacial precursor material in the interfacial precursor solution was 0.5 mg / ml.

[0119] (4) Place the above substrate under a UV lamp (50 mW / cm²). 2 The interface layer was prepared by UV treatment for 10 min and then annealed at 100℃ in N2 environment for 10 min, with a thickness of 1 nm.

[0120] (5) The perovskite components were CsI (23.95 mg), MABr (28.05 mg), FAI (233.92 mg), PbI2 (592.19 mg), and PbBr2 (169.98 mg), which were dissolved in 1 ml of DMF:DMSO with a volume ratio of 4:1. The spin coating parameters were 600 r, 6 s; 2000 r, 40 s; 6000 r, 20 s. 200 μL of CB antisolvent was added at 48 s, and then the perovskite was placed on a hot plate at 100 °C and annealed for 20 min to obtain the perovskite absorber layer.

[0121] (6) PDADl was deposited on the surface of the perovskite absorber layer as a passivation layer by vapor deposition at a rate of 0.1 Å / s and a thickness of 3 nm.

[0122] (7) A 20 nm electron transport layer C was deposited on the surface of the passivation layer by evaporation. 60 ;

[0123] (8) Atomic layer deposition method was used in C 60 A 15nm buffer layer of SnO2 was deposited on the surface.

[0124] (9) A 50 nm transparent electrode IZO was deposited on the SnO2 surface using magnetron sputtering;

[0125] (10) Ag metal electrode layers with a thickness of 200 nm were prepared on the upper and lower surfaces of the device by thermal evaporation to complete the battery fabrication.

[0126] Example 2

[0127] It is basically the same as Example 1, except that the interface precursor material in step (3) is replaced with 2-azidoethylamine of equal concentration.

[0128] Example 3

[0129] It is basically the same as Example 1, except that the interface precursor material in step (3) is replaced with 4-azido-1-butylamine of equal concentration.

[0130] Example 4

[0131] It is basically the same as Example 1, except that the interface precursor material in step (3) is replaced with 5-azido-1-pentylamine of equal concentration.

[0132] Example 5

[0133] It is basically the same as Example 1, except that in step (3), the thickness of the interface layer is 0.1 nm.

[0134] Example 6

[0135] It is basically the same as Example 1, except that in step (3), the thickness of the interface layer is 2 nm.

[0136] Example 7

[0137] It is basically the same as Example 1, except that the UV treatment is omitted in step (4).

[0138] Comparative Example 1

[0139] It is basically the same as Example 1, except that steps (3) and (4) are omitted and there is no interface layer.

[0140] Comparative Example 2

[0141] It is basically the same as Example 1, except that the interface precursor material in step (3) is replaced with 2-aminopyrimidine of equal concentration.

[0142] Comparative Example 3

[0143] It is basically the same as Example 1, except that the interface precursor material in step (3) is replaced with 1-azidopropane of equal concentration.

[0144] Comparative Example 4

[0145] It is basically the same as Example 1, except that the interfacial precursor material in step (3) is replaced with an o-aminophenyl diazonium salt of equal concentration.

[0146] The batteries prepared in each embodiment and comparative example were subjected to performance tests on open-circuit voltage, short-circuit current density, fill factor, and energy conversion efficiency. IV curves were used for the tests, under the following conditions: AM 1.5G standard solar spectrum and irradiance of 1000 W / m². 2 The experimental test results are detailed in Table 1. PCE represents the power conversion efficiency (%), Voc represents the open-circuit voltage (V), and Jsc represents the short-circuit current density (mA / cm²). 2 FF represents the fill factor, expressed as a percentage.

[0147] Table 1

[0148]

[0149] As shown in Table 1, compared with the comparative examples, the batteries prepared in each example have higher photoelectric conversion efficiency. However, the cross-linking effect cannot be achieved in the interface precursor material of comparative example 2 which lacks azide groups and in comparative example 4 which contains diazo groups. The interface precursor material of comparative example 3 lacks amino groups, making it difficult for it to be adsorbed onto the SAM layer and thus difficult to undergo subsequent reactions. This indicates that there is a synergistic effect between amino and azide groups in the interface precursor material, which effectively improves the photoelectric conversion efficiency of the battery.

[0150] The technical features of the above embodiments can be combined in any way. For the sake of brevity, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0151] The embodiments described above are merely illustrative of several implementation methods of this application, intended to facilitate a detailed understanding of the technical solutions of this application, but should not be construed as limiting the scope of protection of the invention patent. It should be noted that those skilled in the art can make various modifications and improvements without departing from the concept of this application, and these all fall within the scope of protection of this application. It should be understood that technical solutions obtained by those skilled in the art based on the technical solutions provided in this application through logical analysis, reasoning, or limited experimentation are all within the scope of protection of the appended claims. Therefore, the scope of protection of this patent application should be determined by the content of the appended claims, and the specification and drawings can be used to interpret the content of the claims.

Claims

1. A method for preparing a perovskite solar cell, characterized in that, Includes the following steps: A hole transport layer is prepared by depositing self-assembled monomolecule materials on a substrate. The self-assembled monomolecule material has CH bonds and phosphonic acid groups; An interface precursor material is deposited on the hole transport layer, and the interface layer is prepared by photoprocessing; the interface precursor material includes amino and azide groups. A perovskite layer is prepared on the interface layer.

2. The method for preparing a perovskite solar cell as described in claim 1, characterized in that, The interface precursor material includes a compound with the structural formula N3-L-NH2, where L is C2~C6. 10 Alkylene.

3. The method for preparing a perovskite solar cell as described in claim 2, characterized in that, The interface precursor material includes materials with the structural formula N3-(CH2). n Compounds of -NH2, where n is an integer from 2 to 10.

4. The method for preparing a perovskite solar cell as described in claim 3, characterized in that, The interface precursor material includes at least one of 2-azidoethylamine, 3-azidopropylamine, 4-azido-1-butylamine, and 5-azidopentane-1-amine.

5. The method for preparing a perovskite solar cell as described in claim 1, characterized in that, The light processing methods include UV processing.

6. The method for preparing a perovskite solar cell as described in claim 5, characterized in that, The preparation method satisfies at least one of the following characteristics: (1) The light intensity of the UV treatment is 10 mW / cm 2 ~50 mW / cm 2 ; (2) The UV treatment time is 1 min to 10 min; (3) The thickness of the interface layer is 0.1 nm to 2 nm.

7. The method for preparing a perovskite solar cell according to any one of claims 1 to 6, characterized in that, The preparation method satisfies at least one of the following characteristics: (1) The method of depositing the interface precursor material on the hole transport layer includes the solution method; (2) After the light treatment, the method further includes: annealing the intermediate obtained by the light treatment to prepare the interface layer.

8. The method for preparing a perovskite solar cell as described in claim 7, characterized in that, The annealing process satisfies at least one of the following characteristics: (1) The annealing temperature is 90℃~100℃ and the time is 5 min~15 min; (2) The annealing atmosphere is an inert atmosphere.

9. The method for preparing a perovskite solar cell according to any one of claims 1 to 6 and 8, characterized in that, The self-assembled monomolecular material includes at least one of Me-4PACz, 2PACz, MeO-2PACz, and 4PADCB.

10. The method for preparing a perovskite solar cell according to any one of claims 1 to 6 and 8, characterized in that, After preparing the perovskite layer, the process further includes: A passivation layer, an electron transport layer, a buffer layer, and an electrode are sequentially fabricated on the perovskite layer. The preparation method satisfies at least one of the following characteristics: (1) The passivation layer comprises at least one of guanidine iodide, oleamide iodate, 2-thiophene ethylamine hydrochloride, isobutylamine iodate and n-butylamine hydrochloride; (2) The electron transport layer includes at least one of fullerene and its derivatives; (3) The buffer layer comprises at least one of copper bath and tin dioxide; (4) The electrode is selected from one of transparent conductive oxide electrodes and metal electrodes; (5) The structure of the perovskite layer is ABX3, where A includes Cs + 、Rb + MA + and FA + At least one of them, B includes Pb 2+ Cu 2 + Zn 2+ Ga 2+ Sn 2+ and Ca 2+ At least one of them, X includes I - ,Br - Cl - F - and SCN - At least one of them.

11. The method for preparing a perovskite solar cell according to any one of claims 1 to 6, 8, characterized in that, The substrate is selected from either a transparent conductive oxide electrode or a crystalline silicon cell.

12. A perovskite battery, characterized in that, The perovskite solar cell was prepared using the method described in any one of claims 1 to 11.

13. A perovskite battery, characterized in that, The device comprises a substrate, a hole transport layer, an interface layer, a perovskite layer, and an electrode, which are stacked sequentially. The hole transport layer comprises a self-assembled monomolecule material having CH bonds and phosphonic acid groups. The interface layer is prepared from amino and azide groups.

14. A photovoltaic module, characterized in that, Including the perovskite solar cell as described in any one of claims 12 to 13.

15. An electrical appliance, characterized in that, This includes perovskite solar cells as described in any one of claims 12-13 or photovoltaic modules as described in claim 14.

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