Dual resonator structures for temperature compensated oscillators, including related devices

Abstract

An apparatus includes a micromechanical system including a semiconductor body. The semiconductor body includes a first resonator, a second resonator, and a support portion. The first resonator is configured to resonate at a first resonant frequency that is substantially frequency stable within a predetermined temperature range. The second resonator is to resonate at a second resonant frequency that decreases or increases substantially linearly as the temperature increases within a predetermined temperature range. The support portion is for supporting both the first resonator and the second resonator.

Description

[0001] Cross-references to related applications

[0002] This application claims the benefit of U.S. Provisional Patent Application No. 63 / 580,247, filed September 1, 2023, entitled “Dual Resonator Structure for Temperature-Compensated Oscillators,” pursuant to 35 USC § 119(e), the entire disclosure of which is incorporated herein by reference. Technical Field

[0003] The examples generally relate to resonators for timing applications. More specifically, some examples relate to microelectromechanical (MEMS) resonators for temperature-compensated oscillators, but are not limited thereto. Background Technology

[0004] Mechanical vibration devices are used in a variety of applications and operating environments for communication systems and other systems requiring frequency references. While quartz-based resonant devices and other acoustic devices are widely used in electronic systems, traditional quartz crystal oscillators are relatively large compared to other components in these systems. This is especially true in applications requiring miniaturization. Integrating these devices with their associated electronic circuitry can be more challenging due to their mechanical properties and specific manufacturing processes. Some integrated circuits (ICs) with precise timing requirements rely on external crystals or crystal oscillator modules. On the other hand, silicon-based microelectromechanical systems (MEMS) are attractive for their use as compact, single-chip integrated or directly integrated frequency references. Attached Figure Description

[0005] Although this disclosure concludes with claims that particularly point out and clearly claim protection for particular embodiments, the various advantages of the examples within the scope of this disclosure will be more readily apparent from the following description when read in conjunction with the accompanying drawings, in which: Figure 1 It is a block diagram of a device including a microelectromechanical system (MEMS) according to one or more examples, the microelectromechanical system (MEMS) including a semiconductor body on a MEMS die, wherein the semiconductor body includes a first resonator, a second resonator and a support portion for supporting both the first resonator and the second resonator (“dual resonator structure”). Figure 2 It is based on one or more examples Figure 1 A perspective view of an embodiment of the device, wherein a corresponding resonator in the first resonator and the second resonator includes a double-ring resonator having a first ring and a second ring; Figure 3It is based on one or more examples Figure 2 A top view of the device; Figure 4A It is based on one or more examples Figure 2 and Figure 3 A top view of the device depicts the vibration or resonance state of the first resonator, which causes the propagation of a first sound wave in a first direction; Figure 4B It is based on one or more examples Figure 2 and Figure 3 A top view of the device depicts the vibration or resonance state of the second resonator, which causes the propagation of a second sound wave in a second direction; Figure 5A It is based on one or more examples Figure 2 and Figure 3 A top view illustrating the schematic layout of the device; Figure 5B yes Figure 5A A close-up top view of a portion of the schematic layout of the device, indicating the gap that allows the resonant portion or ring of the first resonator to be separated from the surrounding electrode material; Figure 6 It is along Figure 5B A partial perspective cross-sectional view of a portion of the device associated with the first resonator, taken by line A-A'; Figure 7 Is it along the same path? Figure 5B A cross-sectional view of a portion of the device associated with the first resonator, taken by line A-A'; Figure 8 It is a schematic block diagram of an apparatus including an oscillator according to one or more examples, the oscillator including a dual resonator structure having a first resonator and a second resonator; Figure 9 This is a block diagram of an oscillator known to the inventors of this disclosure; Figure 10A It is a graph showing the relationship between the frequency temperature coefficient (TCf) of a first resonator (e.g., a reference resonator, but not limited thereto) and the doping concentration, based on one or more examples, and a second curve showing the relationship between the frequency variation of the first resonator and the doping concentration. Figure 10B It is a graph showing the relationship between the frequency change of the first resonator and temperature; Figure 11A It is a graph showing the relationship between TCf and doping concentration of a second resonator (e.g., a temperature sensing resonator, but not limited to) and a second curve showing the relationship between frequency variation of the second resonator and doping concentration, based on one or more examples. Figure 11B It is a graph of a first curve showing the frequency change of a first resonator (e.g., a reference resonator, but not limited thereto) versus temperature, and a second curve showing the frequency change of a second resonator (e.g., a temperature-sensing resonator, but not limited thereto) versus temperature; and Figure 12 It is a block diagram of a device that, in one or more examples, can be used to implement the various functions, operations, actions, processes, or methods disclosed herein. Detailed Implementation

[0006] In the following detailed description, reference is made to the accompanying drawings, which form a part of this disclosure, and specific examples in which this disclosure may be practiced are shown by way of example. These examples are described in sufficient detail to enable those skilled in the art to practice this disclosure. However, other examples may be utilized, and changes in structure, materials, and processes may be made without departing from the scope of this disclosure.

[0007] The illustrations presented herein are not intended to be actual views of any particular method, system, device, or structure, but are merely idealized representations used to describe examples of this disclosure. The accompanying drawings are not necessarily drawn to scale. For the reader's convenience, similar structures or components in the drawings may retain the same or similar numbering; however, similarity in numbering does not imply that the structure or component must be identical in size, composition, configuration, or any other property.

[0008] The following description may include examples to help enable those skilled in the art to practice the disclosed examples. The use of the terms “exemplary,” “by example,” and “for example” means that the related description is illustrative, and while the scope of this disclosure is intended to cover examples and legal equivalents, the use of such terms is not intended to limit the scope of the examples of this disclosure to the specified components, steps, or functions, etc.

[0009] It should be readily understood that the components of the examples, as generally described herein and illustrated in the accompanying drawings, can be arranged and designed in a variety of different configurations. Therefore, the following description of various examples is not intended to limit the scope of this disclosure, but merely to illustrate various examples. While various aspects of the examples are presented in the accompanying drawings, the drawings are not necessarily drawn to scale unless specifically indicated.

[0010] Furthermore, the specific embodiments shown and described are merely examples and should not be construed as the only way to implement this disclosure unless otherwise indicated herein. Components, circuits, and functions can be shown in block diagram form so as not to obscure this disclosure with unnecessary detail. Rather, the specific embodiments shown and described are merely exemplary and should not be construed as the only way to implement this disclosure unless otherwise indicated herein. Additionally, block definitions and logical partitioning between blocks are examples of specific embodiments. It will be apparent to those skilled in the art that this disclosure can be practiced with many other partitioning solutions. In most cases, details regarding timing considerations, etc., have been omitted, as such details are not necessary for obtaining a full understanding of this disclosure and are within the capabilities of those skilled in the art.

[0011] Those skilled in the art will understand that information and signals can be represented using any of a variety of different techniques and methods. For example, data, instructions, commands, information, signals, bits, and symbols that may be referenced throughout this specification can be represented by voltage, current, electromagnetic waves, magnetic fields or particles, light fields or particles, or any combination thereof. For clarity of presentation and description, some figures may illustrate signals as a single signal. Those skilled in the art will understand that a signal can represent a signal bus, wherein the bus can have multiple bit widths, and this disclosure can be implemented on any number of data signals, including a single data signal. Those skilled in the art will understand that this disclosure covers the transmission of quantum information and qubits used to represent quantum information.

[0012] The various exemplary logic blocks, modules, and circuits described in conjunction with the examples disclosed herein may be implemented or executed using a general-purpose processor, a special-purpose processor, a digital signal processor (DSP), an integrated circuit (IC), an application-specific integrated circuit (ASIC), a field-programmable gate array (FPGA) or other programmable logic device, discrete gate or transistor logic components, discrete hardware components, or any combination thereof, designed to perform the functions described herein. A general-purpose processor (which may also be referred to herein as a host processor or simply host) may be a microprocessor, but in alternative embodiments, the processor may be any conventional processor, controller, microcontroller, or state machine. The processor may also be implemented as a combination of computing devices, such as a combination of a DSP and a microprocessor, multiple microprocessors, one or more microprocessors combined with a DSP core, or any other such configuration. A general-purpose computer including a processor is considered a special-purpose computer when executing computational instructions (e.g., software code, but not limited thereto) related to the examples of this disclosure.

[0013] Examples can be described based on processes depicted as flowcharts, schematic diagrams, structural diagrams, or block diagrams. While a flowchart may describe operable actions as a continuous process, many of these actions may be performed in another sequence, in parallel, or substantially simultaneously. Furthermore, the order of actions can be rearranged. A process may correspond to, but is not limited to, a method, thread, function, procedure, subroutine, or subroutine. Moreover, the methods disclosed herein can be implemented in hardware, software, or both. If implemented in software, functions may be stored or transmitted as one or more instructions or code onto a computer-readable medium. Computer-readable media includes both computer storage media and communication media, which includes any medium that facilitates the transfer of a computer program from one location to another.

[0014] In this description, the term "coupled" and its derivatives may be used to indicate that two elements cooperate or interact with each other. When an element is described as "coupled" to another element, then the element may be in direct physical or electrical contact, or there may be an intermediary element or layer. In contrast, when an element is described as "directly coupled" to another element, then there is no intermediary element or layer. In this specification, the terms "connection" and "coupled" are used interchangeably and have the same meaning unless otherwise expressly indicated or the context will otherwise indicate to a person skilled in the art.

[0015] In microelectromechanical systems (MEMS) based oscillators, resonators are used to generate oscillator signals. Ideally, a resonator is used to resonate or oscillate at a specific fixed frequency and maintain that frequency regardless of its surrounding environmental conditions. One of the most significant environmental factors affecting the frequency of a resonator is temperature. In fact, most types of mechanical resonators resonate at a temperature-dependent frequency.

[0016] To generate a reasonably accurate oscillator signal, a resonator can be used to produce a reference signal that compensates for frequency variations caused by temperature changes. In traditional MEMS-based oscillators, frequency variations in the reference signal are compensated for by a phase-locked loop (PLL) based on temperature readings from a temperature sensor. Utilizing prior knowledge of the frequency-temperature behavior of the MEMS resonator, the PLL can adjust the resonator's output frequency based on the temperature readings.

[0017] In traditional MEMS-based oscillators, the MEMS resonator is located on a MEMS die, and the temperature sensor is located on a CMOS die attached to the MEMS die. Therefore, the temperature reading obtained from the temperature sensor on the CMOS die may not accurately represent the temperature of the resonator on the MEMS die. Consequently, there may be a deviation between the temperature sensor reading and the actual temperature of the resonator. Furthermore, a thermal gradient may exist between the temperature sensor on the CMOS die and the reference resonator on the MEMS die. If the resonator experiences a temperature change, it may take time for the temperature change to propagate to the CMOS-based temperature sensor. Temperature deviations may also exist depending on the boundary conditions. This time lag and temperature deviation can adversely affect PLL tuning, resulting in a deviation from the desired oscillation frequency.

[0018] In some traditional MEMS-based oscillators, CMOS-based temperature sensors may be sensitive to other environmental variables, such as stress on the CMOS die. This sensitivity may cause incorrect temperature information to be transmitted to the PLL. Additionally, CMOS-based temperature sensors can be analog sensors that require the use of an analog-to-digital converter (ADC) (e.g., noisy analog sensors). ADCs may have a limited number of ADC bits, which can undesirably limit the resolution of the temperature sensor and the accuracy of the compensation obtained.

[0019] According to one or more examples of this disclosure, a microelectromechanical system (MEMS) includes a semiconductor body comprising a first resonator (e.g., a reference resonator, but not limited thereto), a second resonator (e.g., a temperature-sensing resonator, but not limited thereto), and a support portion for supporting both the first and second resonators (referred to herein as a "dual resonator structure"). In one or more examples, the first resonator is configured to resonate at a first resonant frequency that is relatively frequency-stable (or temperature-insensitive) compared to the second resonator within a predetermined temperature range (e.g., an operating temperature range, but not limited thereto). The second resonator is configured to resonate at a second resonant frequency that is relatively temperature-dependent (or temperature-sensitive) compared to the first resonator within the predetermined temperature range. In one or more examples, the second resonator is configured to resonate at a second resonant frequency that decreases (e.g., substantially linearly) with increasing temperature within the predetermined temperature range. In one or more other examples, the second resonator is configured to resonate at a second resonant frequency that increases (e.g., substantially linearly) with increasing temperature within the predetermined temperature range.

[0020] In one or more examples, the temperature of the dual resonator structure can be extracted from the first and second resonators, at least in part, based on the difference in frequency changes between the first and second resonant frequencies. The difference in frequency changes between the first and second resonant frequencies changes proportionally with temperature. The temperature of the dual resonator structure can be extracted by directly measuring the difference in the changes of the two frequencies. A corresponding adjustment signal can be used to adjust the first resonant frequency (e.g., a reference frequency, but not limited to) from the first resonator (e.g., a reference resonator, but not limited to). Adjustment of the first resonant frequency can improve the accuracy of the first resonant frequency within a predetermined temperature range.

[0021] In one or more examples, the first resonator and the second resonator share the same single support portion on the same MEMS die (e.g., as a single body, but not limited thereto). Therefore, in one or more examples, due to the shared support portion, the temperatures of the first and second resonators can be (e.g., nearly or substantially, but not limited thereto) the same. In one or more examples, a dual-resonator structure including the first and second resonators is on the same single MEMS die to provide improved thermal coupling between the first and second resonators. In one or more specific examples, the dual-resonator structure can be arranged in a compact configuration on a single die with a relatively small die size. Therefore, in one or more examples, the temperature offset and thermal gradient between the first and second resonators can be significantly reduced. In one or more examples, there may be zero (e.g., zero, nearly zero, or negligible, but not limited thereto) temperature offset and / or zero (e.g., zero, nearly zero, or negligible, but not limited thereto) thermal gradient between the first and second resonators. Therefore, in one or more examples, the temperature extracted from the dual-resonator structure may be more accurate.

[0022] In one or more examples, the corresponding shapes and dimensions of the first and second resonators are (e.g., nearly or substantially, but not limited to) identical. Furthermore, the first and second resonators are anchored at the center of the support portion in a symmetrical configuration. Therefore, in one or more examples, the first and second resonators of the dual-resonator structure are substantially symmetrical to each other. In one or more examples, due to the substantial symmetry between the first and second resonators, there is zero (e.g., zero, nearly zero, or negligible, but not limited to) temperature deviation and / or zero (e.g., zero, nearly zero, or negligible, but not limited to) thermal gradient between the first and second resonators. In one or more examples, the symmetrical configuration helps to reduce or eliminate any thermal mismatch caused by the different thermal paths that would otherwise exist.

[0023] In one or more examples, the first and second resonators of the dual-resonator structure are configured to effectively float using a single support anchor in the support section (e.g., within the package, but not limited to this). In one or more examples, due to the use of a single support anchor in the support section, there is a small or no mechanical stress difference between the first and second resonators. Sharing a thermal path from the support structure to the anchor helps to promote zero (e.g., zero, nearly zero, or negligible, but not limited to) temperature deviation and thermal gradient between the first and second resonators.

[0024] In one or more examples, the semiconductor body is made of highly doped single-crystal silicon. In one or more examples, by engineering the direction of acoustic wave vibration propagation and the doping level of the single-crystal silicon, the first and second resonators of the dual-resonator structure have different frequency and temperature distributions. The mechanical vibration characteristics of the semiconductor body made of single-crystal silicon can be derived from the crystal orientation. In one or more examples, different temperature sensitivities in the first and second resonators can be achieved by aligning the first and second resonators with a (non-zero) orientation angle. The orientation angle between the first and second resonators makes the acoustic wave propagation directions of the first and second resonators non-parallel. This is possible in single-crystal silicon materials due to the asymmetric cubic crystal structure of silicon.

[0025] Therefore, even when using a first and second resonator of (substantially) the same shape and size, the vibration frequencies of the first and second resonators vary differently with temperature depending on the direction of sound wave propagation. In one or more examples, the first and second resonators may be configured with different orientation angles (e.g., about 45°), resulting in a relatively large difference in the corresponding frequency distribution with respect to temperature. In one or more examples, other different orientation angles between the first and second resonators are utilized.

[0026] Figure 1 This is a block diagram of a device 100 including a MEMS, which includes a semiconductor body 102 on a MEMS die 104. The semiconductor body 102 includes a first resonator 108 (e.g., a reference resonator, but not limited thereto), a second resonator 110 (e.g., a temperature sensing resonator, but not limited thereto), and a support portion 106 for supporting both the first resonator 108 and the second resonator 110. According to one or more examples, the semiconductor body 102 including the first resonator 108, the second resonator 110, and the support portion 106 may be referred to herein as a "dual resonator structure".

[0027] like Figure 1As shown, the first resonator 108 and the second resonator 110 of the semiconductor body 102 share the same support portion 106 of the semiconductor body 102. In one or more examples, the first resonator 108 and the second resonator 110 are mechanically and / or thermally coupled or connected to each other via the support portion 106. In one or more examples, the first resonator 108 and the second resonator 110 are located on opposite sides of the semiconductor body 102. Figure 1 In the non-limiting example shown, the first resonator 108 is located at a first end of the semiconductor body 102, and the second resonator 110 is located at a second end of the semiconductor body 102 opposite to the first end. In one or more other examples, the respective resonators of the first resonator 108 and the second resonator 110 may be located at any part of the semiconductor body 102 or along any part of the semiconductor body.

[0028] Generate a first drive signal 180 (e.g., V). AC-REF The first resonator 108 is driven by at least one driving electrode to cause it to resonate or vibrate at a first resonant frequency. In response to the first driving signal 180, a first sensing signal 182 having the first resonant frequency (e.g., V0) is sensed from at least one sensing electrode of the first resonator 108. SENSE-REF (e.g., a reference signal). Similarly, a second drive signal 190 (e.g., V) is generated. AC-TEMP The second resonator 110 is driven by at least one driving electrode to cause it to resonate or vibrate at a second resonant frequency. In response to the second driving signal 190, a second sensing signal 192 having the second resonant frequency (e.g., V0) is sensed from at least one sensing electrode of the second resonator 110. SENSE-TEMP (e.g., temperature signal).

[0029] In one or more examples, the first resonator 108 is configured as a reference resonator, and the second resonator 110 is configured as a temperature-sensing resonator. In one or more examples, the first resonator 108 is configured to resonate at a first resonant frequency that is substantially frequency-stable over a predetermined temperature range. Figure 1 The frequency and temperature distribution 109 of the first resonator 108 illustrates an example of a generally frequency-stable frequency associated with the first resonator 108. In one or more examples, the second resonator 110 is used to resonate at a second resonant frequency that generally decreases with increasing temperature over a predetermined temperature range. Figure 1The frequency and temperature distribution 111 of the second resonator 110 illustrates an example of a generally temperature-dependent frequency associated with the second resonator 110. In one or more other examples, the second resonator 110 is used to resonate at a second resonant frequency that increases substantially with increasing temperature over a predetermined temperature range. In one or more examples, the first resonator 108 has a first frequency temperature coefficient, and the second resonator 110 has a second frequency temperature coefficient. The second frequency temperature coefficient of the second resonator 110 differs from the first frequency temperature coefficient of the first resonator 108.

[0030] In one or more examples, the first resonator 108 and the second resonator 110 may be used together to generate a temperature-compensated oscillator signal. An adjustment signal may be generated or calculated based at least in part on the first sensing signal 182 and the second sensing signal 192. The adjustment signal may be used to adjust or compensate for the frequency of a reference signal (e.g., the frequency of the first sensing signal 182 associated with the first resonator 108). In one or more examples, the adjustment signal may be generated or calculated based at least in part on the ratio of frequency changes of the corresponding frequencies of the first sensing signal 182 and the second sensing signal 192.

[0031] In one or more examples, one or more temperature digital converters (TDCs) may be used to perform sensing and / or regulation. Here, in one or more examples, the regulation signal may be generated or calculated (e.g., using a TDC) based at least in part on the ratio of the corresponding temperature changes associated with the first sensing signal 182 and the second sensing signal 192. In one or more examples, the frequency of the first sensing signal 182 may be adjusted at least in part based on the regulation signal (e.g., temperature change) to generate a temperature-compensated oscillator signal.

[0032] Figure 2 It is based on one or more examples Figure 1 A perspective view of the device 100. Figure 2 In the semiconductor body 102, the corresponding resonators in the first resonator 108 and the second resonator 110 are double-ring resonators. Figure 2 In the dual-ring configuration, the first resonator 108 includes a first ring 112, a second ring 114, and a coupling beam 116 coupling the first ring 112 and the second ring 114. Similarly, the second resonator 110 includes a first ring 118, a second ring 120, and a coupling beam 122 coupling the first ring 118 and the second ring 120. The corresponding rings in the first ring 112 and the second ring 114 of the first resonator 108 may be referred to as the resonant portions of the first resonator 108, and the corresponding rings in the first ring 118 and the second ring 120 of the second resonator 110 may be referred to as the resonant portions of the second resonator 110.

[0033] In one or more examples, the support portion 106 mechanically and / or thermally couples or connects the first resonator 108 to the second resonator 110. In one or more examples, the support portion 106 has a generally rectangular body (e.g., it may be rotatable, angled, bent, or folded according to one or more examples, but is not limited thereto). In one or more alternative examples, the support portion 106 may have an oval, elliptical, crescent-shaped, triangular, square, pentagonal, hexagonal, heptagonal, octagonal, nonagonal, decagonal, trapezoidal, parallelogram, rhombus, or kite shape.

[0034] As shown, a connecting portion of the support portion 106 may protrude from the semiconductor body 102 to connect to the coupling beam 116 of the first resonator 108. The connecting portion may (e.g., tightly) surround or encircle a corresponding (e.g., small) portion of the periphery (e.g., outer circumference, but not limited thereto) of the first ring 112 and the second ring 114. In one or more examples, the connecting portion may (e.g., tightly) surround or encircle about 25% or less of the corresponding periphery (e.g., outer circumference, but not limited thereto) of the first ring 112 and the second ring 114. In one or more other examples, the connecting portion may (e.g., tightly) surround or encircle more or less than 25% of the corresponding periphery (e.g., outer circumference, but not limited thereto) of the first ring 112 and the second ring 114.

[0035] As also shown in the figure, the connecting portion of the support portion 106 may protrude from the semiconductor body 102 to connect to the coupling beam 122 of the second resonator 110. The connecting portion may (e.g., tightly) surround or encircle a corresponding (e.g., small) portion of the periphery (e.g., outer circumference, but not limited thereto) of the first ring 118 and the second ring 120. In one or more examples, the connecting portion may (e.g., tightly) surround or encircle about 25% or less of the corresponding periphery (e.g., outer circumference, but not limited thereto) of the first ring 118 and the second ring 120. In one or more other examples, the connecting portion may (e.g., tightly) surround or encircle more or less than 25% of the corresponding periphery (e.g., outer circumference, but not limited thereto) of the first ring 118 and the second ring 120.

[0036] In one or more examples, the respective resonators in the first resonator 108 and the second resonator 110 have a resonator type or configuration different from that of the double-ring resonator. In one or more alternative examples, the respective resonators in the first resonator 108 and the second resonator 110 may be a single-ring resonator, a disk resonator, a square plate resonator, a double-ended fixed resonator, a cantilever resonator, a double-ended fixed beam resonator, or a comb-driven resonator.

[0037] In one or more examples, the semiconductor body 102 may comprise heavily doped monocrystalline silicon. In one or more examples, the material used for the semiconductor body 102 may be or include one or more of polycrystalline silicon, monocrystalline silicon, germanium, diamond, tin, carbon, sulfur, selenium, tellurium, or any alloy thereof. Additional or alternative materials used for the semiconductor body 102 may include or include boron nitride (BN), boron (B), phosphide (P), boron arsenide (BAs), aluminum nitride (AlN), aluminum phosphide (AlP), aluminum arsenide (AlAs), aluminum antimonybide (AlSb), gallium nitride (GaN), gallium phosphide (GaP), gallium arsenide (GaAs), gallium antimonybide (GaSb), indium nitride (InN), indium phosphide (InP), indium arsenide (InAs), indium antimonybide (InSb), cadmium selenide (CdSe), cadmium sulfide (CdS), cadmium telluride (CdTe), any kind of oxide (e.g., Al2O3, ZnO, CuO, PbO, but not limited thereto), zinc selenide (ZnSe), zinc sulfide (ZnS), and zinc telluride (ZnTe). Cuprous chloride (CuCl), copper sulfide (CuS), lead selenide (PbSe), lead sulfide (PbS), lead telluride (PbTe), tin sulfide (SnS), tin telluride (SnTe), lead tin telluride (PbSnTe), bismuth telluride (Bi2Te3), cadmium phosphide (CdP2), cadmium arsenide (CdAs2), zinc phosphide (Zn3P2), zinc diphosphide (ZnP2), zinc arsenide (Zn3As2), zinc antimonide (Zn3Sb2), titanium (Ti), copper (Cu), uranium (U), barium titanate (BaTiO3), strontium titanate (SrTiO3), lithium niobate (LiNbO3), vanadium (V), molybdenum disulfide (MoS2), gallium selenide (GaSe), indium selenide (InSe), iron (Fe), or any alloy thereof.

[0038] refer to Figure 3 The shape, size, and orientation of the first resonator 108 and the second resonator 110 are described. A corresponding resonant portion of one or more resonant sections of the first resonator 108 (e.g., the first ring 112 and the second ring 114, but not limited thereto) has a first shape and a first size. A corresponding resonant portion of one or more resonant sections of the second resonator 110 (e.g., the first ring 118 and the second ring 120, but not limited thereto) has a second shape and a second size. In one or more examples, the second shape of a corresponding resonant portion of one or more resonant sections of the second resonator 110 is substantially the same as the first shape of a corresponding resonant portion of one or more resonant sections of the first resonator 108. Figure 3In one of the exemplary examples, the corresponding resonant portions of one or more resonant portions of the first resonator 108 and the second resonator 110 have a circular or annular shape (e.g., a rounded square, a square-circle, a square-circle based on a hyperellipse, etc.). In one or more examples, the second dimension of the corresponding resonant portion of one or more resonant portions of the second resonator 110 is substantially the same as the first dimension of the corresponding resonant portion of one or more resonant portions of the first resonator 108.

[0039] In one or more alternative examples, the corresponding rings in the first ring 112 and the second ring 114 and / or the corresponding rings in the first ring 118 and the second ring 120 are configured with different shapes and / or different sizes. As some examples, the cross-sectional shape of the corresponding rings in these rings may be a square, triangle, rectangle, rhombus, octagon, pentagon, hexagon, etc., or some kind of ellipse, tilt, ring variation, etc.

[0040] In one or more examples, the first resonator 108 and the second resonator 110 are substantially symmetrical about the lateral axis 380 of the semiconductor body 102. In one or more examples, the symmetry can be observed by comparing the semiconductor body portion including the first resonator 108 (e.g., the left / top side from the lateral axis 362 of the semiconductor body 102) with the semiconductor body portion including the second resonator 110 (e.g., the right side from the lateral axis 360 of the semiconductor body 102). In one or more alternative examples, the first resonator 108 and the second resonator 110 are asymmetrical about the lateral axis of the semiconductor body 102 (i.e., lateral axis 360 or lateral axis 362, but not limited thereto).

[0041] In one or more examples, the first resonator 108 and the second resonator 110 are effectively floating within the package / cover and anchored at an anchoring point 150 at the center of the support portion 106 in a symmetrical configuration. In one or more examples, the anchoring point 150 or the center of the support portion 106 is considered a point of rotation (e.g., the Cartesian origin, but not limited thereto), at which the support portion 106 may be angled, bent, or flexed.

[0042] In one or more examples, a difference orientation angle (e.g., angle A) is defined between the first resonator 108 and the second resonator 110 relative to lateral axes 360 and 362. More specifically, the orientation of the first resonator 108 may be defined relative to the longitudinal axes 350 and / or 352 of the semiconductor body 102 (and / or support portion 106). Similarly, the orientation of the second resonator 110 may be defined relative to the longitudinal axes 350 and / or 352. In one or more examples, the first resonator 108 is oriented with a first orientation angle relative to the longitudinal axis 350, and the second resonator 110 is oriented with a second orientation angle relative to the longitudinal axis 350. In one or more examples, the second orientation angle differs from the first orientation angle. As shown, the longitudinal axis 352 may be defined to pass between the rings 112 and 114 of the first resonator 108. For the longitudinal axis 350, note the same orientation associated with the rings 118 and 120 of the second resonator 110.

[0043] In a specific, non-limiting example, relative to the longitudinal axis 352, the first orientation angle of the first resonator 108 is approximately 0°, and the second orientation angle of the second resonator 110 is approximately 45°; therefore, the differential orientation angle between the first resonator 108 and the second resonator 110 is approximately 45°. Relative to the longitudinal axis 350, the first orientation angle of the first resonator 108 is approximately 0°, and the second orientation angle of the second resonator 110 is approximately 45°; again, the differential orientation angle between the first resonator 108 and the second resonator 110 is approximately 45°. In one or more examples, the first resonator 108 and the second resonator 110 are oriented at angles different from those shown and described. In one or more examples, the differential orientation angle between the first resonator 108 and the second resonator 110 can be configured to be in the range of approximately 10° to 80°.

[0044] As described, the support portion 106 includes a body having at least one bend at an angle to provide a differential orientation angle between the first double-ring resonator and the second double-ring resonator. In one or more specific examples, the first resonator 108 and the second resonator 110 have the same resonator type (e.g., double-ring resonators, but not limited thereto), have substantially the same shape and size (e.g., circular or toroidal, but not limited thereto), and are substantially symmetrical about the transverse axis of the semiconductor body 102, but are oriented at different orientation angles relative to the longitudinal axis of the semiconductor body 102 (i.e., there is a non-zero differential orientation angle between the first resonator 108 and the second resonator 110).

[0045] Therefore, in one or more examples, by engineering the direction of acoustic wave vibration propagation and the doping level of the single-crystal silicon, the first resonator 108 and the second resonator 110 have different frequency and temperature distributions. The semiconductor body 102 made of single-crystal silicon can have its mechanical vibration characteristics derived from this crystal orientation. In one or more examples, different temperature sensitivities in the first resonator 108 and the second resonator 110 can be achieved by oriented the first resonator 108 and the second resonator 110 with a (non-zero) orientation angle. The orientation angle between the first resonator 108 and the second resonator 110 makes the acoustic wave propagation directions of the first resonator 108 and the second resonator 110 non-parallel. This is possible in single-crystal silicon materials due to the asymmetric cubic crystal structure of silicon.

[0046] Figure 4A It is based on one or more examples Figure 2 and Figure 3 A top view of the device 100 depicts the vibration or resonance state of a first resonator 108, which causes the propagation of a first sound wave in a first direction. In the vibration or resonance state, the first resonator 108 repeatedly alternates between a contracting deformation shape and an expanding deformation shape. The first resonator 108 experiences compressive stress during contraction and tensile stress during expansion. Figure 4A In an exemplary example, the first ring 112 of the first resonator 108 is shown as having a contraction deformation shape 406a associated with direction 402a and an expansion deformation shape 406b associated with direction 402b (shown in the outer illustration), but is not limited thereto. Figure 4A In the second resonator 110, the corresponding rings in the first ring 118 and the second ring 120 are shown in a non-vibrating or non-resonant state.

[0047] Figure 4B It is based on one or more examples Figure 2 and Figure 3 A top view of the device 100 depicts the vibration or resonance state of the second resonator 110, which causes the propagation of a second sound wave in a second direction. In the vibration or resonance state, the second resonator 110 repeatedly alternates between a contracting deformation shape and an expanding deformation shape. Similar to the first resonator 108, the second resonator 110 experiences compressive stress during contraction and tensile stress during expansion. Figure 4B In an exemplary example, the first ring 118 of the second resonator 110 is shown as having a contraction deformation shape 408a associated with direction 404a and an expansion deformation shape 408b associated with direction 404b (shown in the outer illustration), but is not limited thereto. Figure 4B In the first resonator 108, the corresponding rings in the first ring 112 and the second ring 114 are shown in a non-vibrating or non-resonant state.

[0048] Similarly, the corresponding resonators in the first resonator 108 and the second resonator 110 are subjected to compressive stress during contraction (e.g., contraction deformation shapes 406a and 408a) and tensile stress during expansion (e.g., expansion deformation shapes 406b and 408b). In one or more specific examples (e.g., Figures 4A to 4B In response to a corresponding drive signal, corresponding quarter segments of the rings of the first resonator 108 and the second resonator 110 contract and expand. In one or more examples, the first resonator 108 and the second resonator 110 are subjected to these stresses (i.e., compressive and tensile stresses) simultaneously, at different times, or at alternating times (e.g., when one resonator of the first resonator 108 or the second resonator 110 is subjected to compressive stress, the other resonator is subjected to tensile stress). In one or more examples, the corresponding half segments of these rings contract and expand uniformly. In a specific non-limiting example, rings 112 and 114 of the first resonator 108 may contract and expand substantially uniformly, and rings 118 and 120 of the second resonator 110 may contract and expand substantially uniformly.

[0049] Given the difference in orientation angle between the first resonator 108 and the second resonator 110, the first direction of propagation of the first sound wave and the second direction of propagation of the second sound wave are non-parallel. In one or more examples, the first direction of propagation of the first sound wave is rotated by an angle A relative to the second direction of propagation of the second sound wave. Figure 3 ).

[0050] In one or more examples, the direction of sound wave vibration propagation is determined by engineering design. Figure 3 , Figure 4A and Figure 4B ) and the doping level of monocrystalline silicon (more on this later) Figures 10A to 10B and Figures 11A to 11B (Description) The first resonator 108 and the second resonator 110 of the dual resonator structure are configured with different frequency and temperature distributions.

[0051] Figure 5A It is based on one or more examples Figure 2 and Figure 3 A top view of the schematic layout of the device 100. Figure 5A Schematic layout and Figure 3 The views shown are substantially the same, including electrode portions, conductive lines, and conductive pads for driving and sensing the first resonator 108 and the second resonator 110.

[0052] The support portion 106 of the semiconductor body 102 includes a bias electrode 504, which is coupled to a conductive line 505 via a conductive via 506, thereby extending to connect to a conductive pad 502. The conductive pad 502 is used to provide a bias signal (V) for biasing the support portion 106. Bias In one or more examples, a conductive via 504 is provided at an anchor point at the center of the support portion 106 to anchor the semiconductor body 102.

[0053] Regarding the first resonator 108 (e.g., a reference resonator, but not limited thereto), the semiconductor body 102 includes a drive electrode 550 within a first ring 112 and a drive electrode 552 within a second ring 114. This is used for driving signals (V... d, ref The conductive pad 512 is coupled to the conductive line 558, which is further coupled to the conductive vias 514 and 516 via the conductive bridge 590 to drive the drive electrodes 550 and 552, respectively. The sensing electrode 554, which (e.g., tightly) surrounds the outer portion of the first ring 112 and the second ring 114, is coupled to the conductive line 556 via the conductive via 524, extending to the conductive pad 522 to receive the sensing signal (V). s, ref ).

[0054] Regarding the second resonator 110 (e.g., a temperature-sensing resonator, but not limited thereto), the semiconductor body 102 includes a drive electrode 560 within the first ring 118 and a drive electrode 562 within the second ring 120. This is used for the drive signal (V... d, temp The conductive pad 532 is coupled to the conductive line 568, which is further coupled to the conductive vias 534 and 536 via the conductive bridge 592 to drive the drive electrodes 560 and 562, respectively. The sensing electrode 564, which (e.g., tightly) surrounds the outer portion of the first ring 118 and the second ring 120, is coupled to the conductive line 566 via the conductive via 544, extending to the conductive pad 542 to receive the sensing signal (V). s, temp ).

[0055] Notice, Figure 5A The drive signal (V) of the first resonator 108 d, ref ) and sensing signal (V s, ref ) respectively correspond to Figure 1 and Figure 2 First drive signal 180 (V) AC-REF ) and the first sensing signal 182 (V SENSE-REF ),and Figure 5A The driving signal (V) of the second resonator 110 d, temp ) and sensing signal (V s, temp ) respectively correspond to Figure 1 and Figure 2 The second drive signal 190 (V AC-TEMP) and the second sensing signal 192 (V SENSE-TEMP ).

[0056] Figure 5B yes Figure 5A A close-up top view of a portion of the schematic layout of the device 100. The close-up top view is provided to indicate gaps (e.g., air gaps) that separate the resonant portion or ring of the resonator from the surrounding electrode material. More specifically, gap 580 is disposed between the inner periphery or circumference of the first ring 112 and the drive electrode 550, and gap 582 is disposed between the outer periphery or circumference of the first ring 112 and the sensing electrode 554 (and a portion of the support portion 106). Additionally, gap 584 is disposed between the inner periphery or circumference of the second ring 114 and the drive electrode 552, and gap 586 is disposed between the outer periphery or circumference of the second ring 114 and the sensing electrode 554 (and a portion of the support portion 106). The first ring 118 and the second ring 120 of the second resonator 110 can also be disposed in the same or similar manner. Figure 5A The gap separating it from the surrounding electrode material.

[0057] Figure 6 It is along Figure 5B The line A-A' is a perspective partial cross-sectional view of a portion of the device associated with the first resonator 108. In this particular example view, the device is covered above and inside the respective half-parts of the rings 112 and 114 of the first resonator 108, as shown in the partial cross-section, and the respective other half-parts of the rings 112 and 114 of the first resonator 108 are not covered and have no cross-section (e.g., the drive / sensing electrode material is removed). Figure 7 Is it along the same path? Figure 5B The line A-A' is a cross-sectional view of a portion of the device associated with the first resonator 108.

[0058] exist Figure 6 and Figure 7 In the conductive vias 514 and 516, the corresponding conductive vias are coupled to the driving electrodes 550 and 552 respectively through conductive material portions 610 and 612. The conductive material portion 610 associated with conductive via 514 is separated from the surrounding material by a surrounding insulating portion 704, and the conductive material portion 612 associated with conductive via 516 is separated from the surrounding material by a surrounding insulating portion 706. Gap points 580 and 582 between the first ring 112 and the surrounding electrode material, and gap points 584 and 586 between the second ring 114 and the surrounding electrode material are also... Figure 6 and Figure 7 The instructions are as follows. Note that the second resonator, including its associated ring, can be constructed in the same or similar manner as the first resonator 108, which includes rings 112 and 114.

[0059] Figure 8 This is a schematic block diagram of a device 800 including an oscillator according to one or more embodiments, the oscillator comprising a dual resonator structure having a first resonator 108 and a second resonator 110. In one or more examples, Figure 8 The oscillator is a temperature-compensated oscillator to generate an oscillating signal with a frequency that is substantially stable over a predetermined temperature range (e.g., temperature-insensitive, but not limited thereto). The device 800, which includes an oscillator with a dual resonator structure, can be an alternative to existing quartz-based oscillators (such as crystal oscillators (XO) or temperature-compensated crystal oscillators (TCXO)) (e.g., such alternatives can be used, but are not limited thereto).

[0060] Device 800 includes a MEMS die 104 attached to a complementary metal-oxide-semiconductor (CMOS) die 802 via a die attachment 804 (e.g., epoxy resin or others, but not limited thereto). As previously mentioned... Figure 1 As described, the MEMS die 104 includes a dual resonator structure having a first resonator 108 (e.g., a reference resonator, but not limited thereto) and a second resonator 110 (e.g., a temperature sensing resonator, but not limited thereto). The CMOS die 802 includes electronic circuitry 850 for generating oscillating signals using the first resonator 108 and the second resonator 110 on the MEMS die 104.

[0061] Electronic circuit 850 includes a first driving circuit 806, a second driving circuit 808, a digital-to-digital converter circuit 810, a temperature compensation circuit 812, and a phase-locked loop (PLL) circuit 814. In one or more examples, electronic circuit 850 may be part of or included therein in an application-specific integrated circuit (ASIC). The first driving circuit 806 is used to generate a first driving signal to drive a first resonator 108 via at least a first driving electrode. The first driving signal may be driven at a first driving frequency. The second driving circuit 808 is used to generate a second driving signal to drive a second resonator 110 via at least a second driving electrode. The second driving signal may be driven at a second driving frequency. In one or more examples, the second driving frequency is different from the first driving frequency.

[0062] In one or more examples, the digital converter circuit 810 may be or include a temperature digital converter (TDC) circuit. TDC allows for very low-noise and high-resolution digital measurement of temperature. The digital converter circuit 810 is used to receive a first sensing signal 182 from a first resonator 108 via at least a first sensing electrode, and convert the first sensing signal 182 into first digital temperature data. The first sensing signal 182 has a first sensing signal frequency, and the first digital temperature data represents a first temperature corresponding to the first sensing signal frequency. The digital converter circuit 810 is used to receive a second sensing signal 192 from a second resonator 110 via at least a second sensing electrode, and convert the second sensing signal 192 into second digital temperature data. The second sensing signal 192 has a second sensing signal frequency, and the second digital temperature data represents a second temperature corresponding to the second sensing signal frequency.

[0063] In one or more examples, temperature compensation circuit 812 is used to generate an adjustment signal based at least in part on the ratio of changes in a first temperature (e.g., as represented by first digital temperature data) and a second temperature (e.g., as represented by second digital temperature data). PLL circuit 814 is used to adjust the frequency of a first sensing signal of a first sensing signal based at least in part on the adjustment signal to generate a temperature-compensated oscillator signal. In one or more examples, the resulting temperature-compensated oscillator signal has a relatively stable frequency within a predetermined temperature range.

[0064] Figure 9 This is a block diagram of an oscillator 900 known to the inventors of this disclosure. The oscillator 900 includes a MEMS die 904 attached to a CMOS die 902 via a die attachment 906. The MEMS die 904 includes a resonator 908, and the CMOS die 902 includes a temperature sensor 910 and processing circuitry 912. The processing circuitry 912 is used to receive and process a sensing signal from the resonator 908. The processing circuitry 912 is used to compensate the frequency of the sensing signal from the resonator 908 on the MEMS die 904 based on a temperature reading from the temperature sensor 910 on the CMOS die 902.

[0065] exist Figure 9In the oscillator 900, there is limited thermal coupling between the resonator 908 and the temperature sensor 910. Temperature readings from the temperature sensor 910 are largely correlated with the temperature on the CMOS die 902, and not necessarily with the resonator 908 on the MEMS die 904. Because of the temperature offset between the resonator 908 and the temperature sensor 910, the temperature readings and the resulting frequency tuning may be inaccurate. Furthermore, the thermal gradient between the resonator 908 and the temperature sensor 910 causes their respective temperatures to be out of sync, especially when experiencing relatively rapid temperature transients. Because the resonator 908 and the temperature sensor 910 do not track each other equally, it is difficult to read their respective temperatures simultaneously and correlate them. Additionally, the temperature sensor 910 is sensitive to many other environmental factors, such as aging and stress of the CMOS die 902 and its associated package. Moreover, the temperature sensor 910 provides an analog output signal, which may have relatively high noise and requires the use of an ADC. In some cases, the ADC may have a limited number of ADC bits, which will undesirably limit the resolution of the temperature readout values, leading to inaccurate compensation.

[0066] Similarly, in one or more examples, at least in part based on the direction of acoustic wave vibration propagation and the doping level of the single-crystal silicon, the first and second resonators of the dual-resonator structure have different frequency and temperature distributions. Regarding Figures 10A to 10B and Figures 11A to 11B This will be explained further.

[0067] Figure 10A Graph 1000A is a graph showing the relationship between the frequency temperature coefficient (TCf) of a first resonator (e.g., a reference resonator, but not limited thereto) and the doping concentration, based on one or more examples, curve 1002 and curve 1004 showing the relationship between the frequency variation of the first resonator and the doping concentration. The frequency variation is indicated in parts per million (ppm), TCf is indicated in ppm (ppm / °C) relative to degrees Celsius (°C), and the doping concentration is indicated in cubic centimeters (cm³). 3 )instruct.

[0068] Curves 1002 and 1004 are associated with a first resonator 108 constructed at an orientation angle of approximately 45° and having a resonant (reference) frequency of 42 MHz (e.g., Figures 2 to 3 (For example, a reference resonator, but not limited to this) associated. Along Figure 10A For curve 1002, select one or more data points (e.g., data point 1005, but not limited to) associated with TCf at zero (or near zero). Data point 1005 is indicated as corresponding to approximately -7e19 cm. -3 The doping concentration is approximately -7e19cm. -3The optimal doping concentration is indicated as corresponding to a specific data point on curve 1004, and this data point is used as... Figure 10B The basis of the corresponding curve.

[0069] Figure 10B This is graph 1000B, which shows the relationship between the frequency change of the first resonator (e.g., a reference resonator, but not limited thereto) and temperature. In one or more examples, the predetermined temperature range of the resonator structure is at least between about -40°C and 90°C. In one or more alternative examples, the predetermined temperature range may be at least between about -20°C and 70°C. In one or more examples, the predetermined temperature range of the resonator structure is the operating temperature range of the temperature-controlled oscillator including the resonator structure. Figure 10B As shown, at room temperature (RT), the frequency variation, or deviation from the reference frequency, is approximately zero (approximately 0 ppm). Room temperature can be considered to be between 20°C and 25°C (68℉ and 77℉), with an average room temperature of around 23°C (73℉). This lowest frequency deviation (i.e., approximately 0 ppm) is indicated at point 1012 on curve 1010, which is typically the apex of curve 1010. Similarly... Figure 10B As shown, the frequency variation or increment is only about 139 ppm over the (entire) predetermined temperature range.

[0070] Therefore, as described, the first resonator can exhibit a relatively frequency-stable (e.g., temperature-insensitive, but not limited to) resonant frequency over a predetermined temperature range (e.g., compared to the second resonator). Figure 11B The relative frequency stability of the first resonator can be observed better in curve 1110, which better reveals the relative flatness of the frequency variation over a predetermined temperature range (i.e., relative to the frequency stability of the first resonator). Figure 11B (Frequency-dependent properties of the second resonator in curve 1112).

[0071] exist Figure 10B In a specific, non-limiting example, the relative frequency stability of the first resonator can be more specifically characterized by a curve 1010 that comprises a generally U-shaped or parabolic curve over a predetermined temperature range. Figure 10BIn one or more examples, the generally U-shaped or parabolic curve has a downward opening. In one or more alternative examples, the generally U-shaped or parabolic curve may have an upward opening. In one or more examples, the generally U-shaped or parabolic curve has a vertex at approximately room temperature. In one or more examples, the resonator is substantially frequency-stable if the frequency variation or increment within a predetermined temperature range is less than a predetermined amount. In one or more examples, the frequency variation or increment for frequency stability within a predetermined temperature range is less than 200 ppm (e.g., within -40°C to 90°C). In one or more alternative examples, the frequency variation or increment for frequency stability within a predetermined temperature range is less than 600 ppm (e.g., within -40°C to 90°C).

[0072] Therefore, the first resonator can resonate at a first resonant frequency, which is substantially frequency-stable within a predetermined temperature range, but can change substantially parabolically (e.g., slightly) with increasing temperature within the predetermined temperature range according to a substantially U-shaped or parabolic curve. The substantially U-shaped or parabolic curve can have a downward opening or an upward opening. In one or more examples, the substantially U-shaped or parabolic curve has a peak at approximately room temperature. In one or more examples, the first resonant frequency can exhibit a substantially parabolic frequency change or increment within the predetermined temperature range that is less than a predetermined amount (e.g., 200 ppm or 600 ppm).

[0073] Figure 11A This is a graph 1100A showing curve 1102 representing the relationship between TCf and doping concentration for a second resonator (e.g., a temperature-sensing resonator, but not limited thereto) and curve 1104 representing the relationship between frequency variation of the second resonator and doping concentration, based on one or more examples. In one or more examples, curves 1102 and 1104 are associated with a second resonator 110 (e.g., configured at an orientation angle of approximately 0° and having a resonant frequency of 44 MHz) Figures 2 to 3 (For example, a temperature-sensing resonator, but not limited to this) is associated. Along curve 1104, a selection corresponding to approximately -7e19cm is chosen. -3 One or more data points with a doping concentration of (e.g., data point 1105, but not limited to). Approximately -7e19cm -3 The doping concentration is indicated as corresponding to a specific data point on curve 1104, and this data point is used as... Figure 11B The basis for the corresponding curve graph.

[0074] Figure 11BThis is a graph 1100B showing the relationship between the frequency change of a second resonator (e.g., a temperature-sensing resonator, but not limited to) and temperature, based on one or more examples of curves 1112. For the second resonator, the frequency change or deviation from the reference frequency at room temperature is approximately -12 ppm (which is extremely small). Figure 11B As shown, the frequency variation or increment of the second resonator within a predetermined temperature range is approximately 1642 ppm. It is evident that the second resonator exhibits a relatively temperature-dependent (e.g., temperature-sensitive, but not limited to) resonant frequency within the predetermined temperature range (e.g., compared to the first resonator).

[0075] In one or more examples, the second resonator exhibits a resonant frequency that decreases (e.g., substantially linearly) with increasing temperature over a predetermined temperature range. In one or more examples, the frequency distribution of the second resonator with temperature may be defined by a linear function with a negative slope. In one or more alternative examples, the second resonator exhibits a resonant frequency that increases (e.g., substantially linearly) with increasing temperature over a predetermined temperature range.

[0076] Figure 11B A curve 1110, representing the relationship between frequency variation and temperature for a first resonator (e.g., a reference resonator, but not limited thereto), is also shown, according to one or more examples. The curve 1110 for the first resonator (e.g., relatively flat) is compared with the curve 1112 for the second resonator (e.g., linearly decreasing).

[0077] In one or more examples, if the frequency change or increment of the first resonator within a predetermined temperature range is significantly or substantially smaller than the frequency change or increment of the second resonator within the predetermined temperature range (e.g., at least a predetermined amount), then the first resonator may be substantially frequency-stable relative to the second resonator. In one or more examples, the difference between the corresponding frequency changes or increments between the first and second resonators within the predetermined temperature range is at least 1000 ppm (e.g., within -40°C to 90°C) (i.e., the first resonator has a substantially relatively smaller frequency change or increment than the second resonator).

[0078] Similarly, in one or more examples, the first and second resonators work together to generate a temperature-compensated oscillator signal. (Reference) Figure 11B The temperature reading 1114 is used to calculate the frequency / temperature change ratio. An adjustment signal is calculated based at least in part on the ratio of change. The frequency of the sensed signal from the first resonator (e.g., a reference resonator, but not limited to) is adjusted based at least in part on the adjustment signal, thereby generating a temperature-compensated oscillator signal.

[0079] Figure 12 This is a block diagram of device 1200, which, in one or more examples, can be used to implement the various functions, operations, actions, processes, or methods disclosed herein. Device 1200 includes, but is not limited to, one or more processors 1204 (sometimes referred to herein as "processor 1204") operatively coupled to one or more means such as a data storage device (sometimes referred to herein as "storage device 1206"). Storage device 1206 includes machine-executable code 1208 stored thereon (e.g., stored on computer-readable storage, but not limited thereto), and processor 1204 includes logic circuitry 1210. Machine-executable code 1208 includes information describing functional elements that can be implemented (e.g., executed by, but not limited to) by logic circuitry 1210. Logic circuitry 1210 implements (e.g., executes, but is not limited to) the functional elements described by machine-executable code 1208. When executing the functional elements described by machine-executable code 1208, device 1200 should be considered as dedicated hardware capable of executing the functional elements disclosed herein. In one or more examples, processor 1204 may execute the functional elements described by machine-executable code 1208 sequentially, simultaneously (e.g., on one or more different hardware platforms, but not limited thereto), or in one or more parallel process flows.

[0080] When implemented by the logic circuitry 1210 of processor 1204, machine-executable code 1208 may adapt processor 1204 to perform the operations of the examples disclosed herein. For example, machine-executable code 1208 may adapt processor 1204 to perform operations related to... Figure 8 The electronic circuit 850 discusses at least some or all of the operations, but is not limited thereto.

[0081] Processor 1204 may include a general-purpose processor, a special-purpose processor, a central processing unit (CPU), a microcontroller, a programmable logic controller (PLC), a digital signal processor (DSP), an application-specific integrated circuit (ASIC), a field-programmable gate array (FPGA) or other programmable logic device, discrete gate or transistor logic components, discrete hardware components, other programmable devices, or any combination thereof designed to perform the functions disclosed herein. A general-purpose computer including a processor is considered a special-purpose computer when executing computational instructions (e.g., software code, but not limited thereto) relevant to the example. It should be noted that the general-purpose processor (which may also be referred to herein as a host processor or simply host) may be a microprocessor, but in alternative embodiments, processor 1204 may include any conventional processor, controller, microcontroller, or state machine. Processor 1204 may also be implemented as a combination of computing devices, such as a combination of a DSP and a microprocessor, multiple microprocessors, one or more microprocessors combined with a DSP core, or any other such configuration.

[0082] In one or more examples, storage device 1206 includes volatile data storage devices (e.g., random access memory (RAM), but not limited thereto) and non-volatile data storage devices (e.g., flash memory, hard disk drive, solid-state drive, erasable programmable read-only memory (EPROM), but not limited thereto). In one or more examples, processor 1204 and storage device 1206 may be implemented as a single device (e.g., semiconductor device product, system-on-a-chip (SoC), but not limited thereto). In one or more examples, processor 1204 and storage device 1206 may be implemented as separate devices.

[0083] In one or more examples, the machine-executable code 1208 may include computer-readable instructions (e.g., software code, firmware code, but not limited thereto). By way of non-limiting example, the computer-readable instructions may be stored by storage device 1206, directly accessed by processor 1204, and executed by processor 1204 using at least logic circuitry 1210. Alternatively, by way of non-limiting example, the computer-readable instructions may be stored on storage device 1206, transferred to a memory device (not shown) for execution, and executed by processor 1204 using at least logic circuitry 1210. Thus, in one or more examples, logic circuitry 1210 includes logic circuitry that can be configured electrically.

[0084] In one or more examples, machine-executable code 1208 may describe hardware (e.g., circuitry, but not limited to) to be implemented in logic circuitry 1210 to perform functional elements. This hardware can be described from any of a range of abstraction levels, from low-level transistor layout to high-level description languages. At high-level abstraction, hardware description languages ​​(HDLs) such as, but not limited to, the Institute of Electrical and Electronics Engineers (IEEE) standard hardware description languages ​​(HDLs) can be used. VERILOG can be used by way of non-limiting example. ® SystemVerilog ™ Or Very Large Scale Integration (VLSI) Hardware Description Language (VHDL) ™ ).

[0085] HDL descriptions can be transformed into descriptions at any of a variety of other levels of abstraction as needed. As a non-limiting example, a high-level description can be transformed into a logic-level description such as Register Pass Language (RTL), Gate-level (GL) description, layout-level description, or mask-level description. As a non-limiting example, micro-operations to be performed by the hardware logic circuitry of logic circuitry 1210 (e.g., gates, flip-flops, registers, but not limited thereto) can be described in RTL and then transformed into a GL description by a synthesis tool, and the GL description can be transformed into a layout-level description by a placement and routing tool, which corresponds to the physical layout of an integrated circuit, discrete gate or transistor logic unit, discrete hardware component, or combination thereof of a programmable logic device. Therefore, in one or more examples, machine-executable code 1208 can include HDL, RTL, GL descriptions, mask-level descriptions, other hardware descriptions, or any combination thereof.

[0086] In an example where machine-executable code 1208 includes a hardware description (at any level of abstraction), the system (not shown, but including storage device 1206) may implement the hardware description described by machine-executable code 1208. By way of non-limiting example, processor 1204 may include a programmable logic device (e.g., an FPGA or a PLC, but not limited thereto), and logic circuitry 1210 may be electrically controlled to implement circuitry corresponding to the hardware description into logic circuitry 1210. Similarly, by way of non-limiting example, logic circuitry 1210 may include hardwired logic components manufactured by a manufacturing system (not shown, but including storage device 1206) according to the hardware description of machine-executable code 1208.

[0087] Regardless of whether the machine-executable code 1208 includes computer-readable instructions or a hardware description, the logic circuit 1210 executes the functional elements described by the machine-executable code 1208 when implementing the functional elements of the machine-executable code 1208. It should be noted that although the hardware description may not directly describe the functional elements, it indirectly describes the functional elements that the hardware elements described by the hardware description can execute.

[0088] As used herein, the term “substantially” in indexing a given parameter, property, or condition means and includes, to a certain extent, that a person skilled in the art would understand that the given parameter, property, or condition is satisfied with minor variations (such as within acceptable manufacturing tolerances). For example, a parameter that is substantially satisfied could be satisfied with at least about 90%, at least about 95%, or even at least about 99%.

[0089] As used in this disclosure, the terms "module" or "component" can refer to a specific hardware implementation of an action of a module or component, software object, or software routine that can be executed on or by general-purpose hardware of a computing system (e.g., computer-readable media, processing devices, but not limited thereto). In one or more examples, the different components, modules, engines, and services described in this disclosure can be implemented as objects or processes that execute on a computing system (e.g., as separate threads, but not limited thereto). While some of the systems and methods described in this disclosure are generally described as being implemented in software (stored on or executed by general-purpose hardware), specific hardware implementations or combinations of software and specific hardware implementations are also possible and contemplated.

[0090] As used in this disclosure, the term "combination" referring to multiple elements can include any combination of all elements or any combination of various different sub-combinations of certain elements. For example, the phrase "A, B, C, D or combinations thereof" can refer to any one of A, B, C, or D; a combination of each of A, B, C, and D; and any sub-combination of A, B, C, or D, such as A, B, and C; A, B, and D; A, C, and D; B, C, and D; A and B; A and C; A and D; B and C; B and D; or C and D.

[0091] The terms used in this disclosure, and especially in the appended claims (e.g., the body of the appended claims), are generally intended to be “open” terms (e.g., the term “comprising” should be interpreted as “including but not limited to”, the term “having” should be interpreted as “at least having”, and the term “comprising” should be interpreted as “including but not limited to”, but not limited to.) As used herein, “each” means “some or all”. As used herein, “every” means “all”.

[0092] Furthermore, if a specific number of introduced claim statements are anticipated, such an intent will be explicitly stated in the claims, and without such statements, no such intent exists. For example, as an aid to understanding, the appended claims may contain the use of the introductory phrases “at least one” and “one or more” to introduce claim statements. However, the use of such phrases should not be construed as implying that a claim statement introduced by the indefinite article “a” or “an” limits any particular claim containing such an introduced claim statement to an example containing only one such statement, even when the same claim includes the introductory phrase “one or more” or “at least one” and an indefinite article such as “a” or “an” (e.g., “a” or “an” refers to “at least one” or “one or more”); the same applies to the use of definite articles to introduce claim statements.

[0093] In addition, even when a specific number of the introduced claims are explicitly stated, those skilled in the art will recognize that such statements should be interpreted as meaning at least the number stated (e.g., the unmodified statement "two statements" means at least two statements, or two or more statements, in the absence of other modifying elements). Furthermore, in those conventional instances where phrases such as "at least one of A, B, and C, but not limited thereto" or "one or more of A, B, and C, but not limited thereto" are used, such constructions are generally intended to include A alone, B alone, C alone, A and B together, A and C together, B and C together, or A, B, and C together, but not limited thereto.

[0094] Furthermore, any separate word or phrase presenting two or more alternative terms in the specification, claims, or drawings should be understood to contemplate the possibility of including one term, any one term, or both terms. For example, the phrase "A or B" should be understood to include the possibility of including "A" or "B" or "A and B".

[0095] Any separate word or phrase presenting two or more alternative terms, whether in the specification, claims, or drawings, should be understood to include the possibility of including one term, any one of the terms, or both terms. For example, the phrase "A or B" should be understood to include the possibility of including "A" or "B" or "A and B".

[0096] While this disclosure has been described with respect to certain exemplary embodiments, those skilled in the art will recognize and understand that the invention is not limited thereto. Rather, many additions, deletions, and modifications may be made to the exemplary and described embodiments without departing from the scope of the invention as claimed below and its legal equivalents. Furthermore, features from one embodiment may be combined with features from another embodiment while still being included within the scope of the invention as contemplated by the inventors.

[0097] The following is a non-exhaustive and non-limiting list of embodiments. Not every embodiment listed below is explicitly and individually indicated to be combinable with all other embodiments listed below and discussed above. However, it is intended that these embodiments be combinable with all other embodiments unless it would be obvious to those skilled in the art that these embodiments are not combinable.

[0098] Example 1: An apparatus comprising: a microelectromechanical system (MEMS), the MEMS including a semiconductor body, the semiconductor body including: a first resonator for resonating at a first resonant frequency, the first resonant frequency being substantially frequency-stable within a predetermined temperature range; a second resonator for resonating at a second resonant frequency, the second resonant frequency decreasing or increasing substantially linearly with increasing temperature within the predetermined temperature range; and a support portion for supporting both the first resonator and the second resonator.

[0099] Example 2: According to the device described in Example 1, wherein: the first resonator has a first frequency temperature coefficient; and the second resonator has a second frequency temperature coefficient, the second frequency temperature coefficient being different from the first frequency temperature coefficient.

[0100] Example 3: The apparatus according to any one of Examples 1 and 2, wherein: the first resonator includes a reference resonator; the second resonator includes a temperature sensing resonator; and the support portion mechanically and thermally couples the first resonator to the second resonator.

[0101] Example 4: The apparatus according to any one of Examples 1 to 3, wherein the semiconductor body comprises: at least one first driving electrode of the first resonator; at least one first sensing electrode of the first resonator; at least one second driving electrode of the second resonator; and at least one second sensing electrode of the second resonator.

[0102] Example 5: The apparatus according to any one of Examples 1 to 4, wherein: a corresponding resonant portion of one or more resonant portions of the first resonator has a first shape and a first size; a corresponding resonant portion of one or more resonant portions of the second resonator has a second shape and a second size; the second shape is substantially the same as the first shape; and the second size is substantially the same as the first size.

[0103] Example 6: The apparatus according to any one of Examples 1 to 5, wherein the first resonator and the second resonator are substantially symmetrical about the transverse axis of the semiconductor body.

[0104] Example 7: The apparatus according to any one of Examples 1 to 6, wherein the first resonator and the second resonator are oriented relative to each other with a different orientation angle.

[0105] Example 8: The apparatus according to any one of Examples 1 to 7, wherein: the first resonator resonates at the first resonant frequency to exhibit first sound wave propagation in a first direction; the second resonator resonates at the second resonant frequency to exhibit second sound wave propagation in a second direction; and the first direction and the second direction are non-parallel.

[0106] Example 9: The apparatus according to any one of Examples 1 to 8, wherein the differential orientation angle is about 45°.

[0107] Example 10: The apparatus according to any one of Examples 1 to 9, wherein: the first resonator is used to resonate at the first resonant frequency, the first resonant frequency changing substantially parabolically with increasing temperature within the predetermined temperature range according to a substantially U-shaped or parabolic curve having one of a downward opening or an upward opening, the substantially U-shaped or parabolic curve having a apex at approximately room temperature.

[0108] Example 11: The device according to any one of Examples 1 to 10, wherein the first resonant frequency exhibits a frequency change or increment of less than a predetermined amount within the predetermined temperature range.

[0109] Example 12: The apparatus according to any one of Examples 1 to 11, wherein the predetermined amount is 600 parts per million within the predetermined temperature range of -40°C to 90°C.

[0110] Example 13: The apparatus according to any one of Examples 1 to 12, wherein the second resonator is used to resonate at the second resonant frequency, the second resonant frequency decreasing substantially linearly with increasing temperature within the predetermined temperature range.

[0111] Example 14: The apparatus according to any one of Examples 1 to 13, wherein the semiconductor body comprises monocrystalline silicon.

[0112] Example 15: The apparatus according to any one of Examples 1 to 14, the apparatus comprising: a single die, the single die comprising the semiconductor body.

[0113] Example 16: The apparatus according to any one of Examples 1 to 15, wherein the corresponding resonator in the first resonator and the second resonator includes a double-ring resonator, the double-ring resonator including a first ring, a second ring and a coupling beam for coupling the first ring and the second ring.

[0114] Example 17: The apparatus according to any one of Examples 1 to 16, wherein the corresponding resonators in the first resonator and the second resonator include a ring resonator, a disk resonator, a square plate resonator, a double-ended fixed resonator, a cantilever resonator, a double-ended fixed beam resonator, and a comb-driven resonator.

[0115] Example 18: An apparatus comprising: an oscillator, the oscillator comprising: a microelectromechanical system (MEMS), the MEMS comprising a semiconductor body, the semiconductor body comprising: a first resonator for resonating at a first resonant frequency, the first resonant frequency being substantially frequency-stable within a predetermined temperature range; at least one first driving electrode of the first resonator; at least one first sensing electrode of the first resonator; a second resonator for resonating at a second resonant frequency, the second resonant frequency decreasing or increasing substantially linearly with increasing temperature within the predetermined temperature range; at least one second driving electrode of the second resonator; at least one second sensing electrode of the second resonator; and a support portion for supporting both the first resonator and the second resonator.

[0116] Example 19: The apparatus according to Example 18, wherein the microelectromechanical system is located on a first die, the apparatus comprising: the oscillator, the oscillator comprising: electronic circuitry located on a second die attached to the first die, the electronic circuitry comprising: a first driving circuitry for generating a first driving signal to drive the first resonator via the at least one first driving electrode, the first driving signal having a first driving frequency; a second driving circuitry for generating a second driving signal to drive the second resonator via the at least one second driving electrode, the second driving signal having a second driving frequency; and a digitizer circuitry for receiving a first sensing signal from the first resonator via the at least one first sensing electrode and converting the first sensing signal into first digital temperature data, the first sensing signal having a first sensing signal frequency, and the first digital temperature data representing a first temperature corresponding to the first sensing signal frequency; and the digitizer circuitry for receiving a second sensing signal from the second resonator via the at least one second sensing electrode and converting the second sensing signal into second digital temperature data, the second sensing signal having a second sensing signal frequency, and the second digital temperature data representing a second temperature corresponding to the second sensing signal frequency.

[0117] Example 20: The apparatus according to any one of Examples 18 and 19, the apparatus comprising: the electronic circuit, the electronic circuit comprising: a temperature compensation circuit for generating an adjustment signal based at least in part on the ratio of the changes in the first temperature represented by the first digital temperature data and the second temperature represented by the second digital temperature data, respectively; and a phase-locked loop circuit for adjusting the frequency of the first sensing signal based at least in part on the adjustment signal to generate a temperature-compensated oscillator signal.

[0118] Example 21: The apparatus according to any one of Examples 18 to 20, wherein the digital converter circuit includes a temperature digital converter (TDC).

[0119] Example 22: The apparatus according to any one of Examples 18 to 21, wherein the support portion mechanically and thermally couples the first resonator to the second resonator.

[0120] Example 23: The apparatus according to any one of Examples 18 to 22, wherein: a corresponding resonant portion of one or more resonant portions of the first resonator has a first shape and a first size; a corresponding resonant portion of one or more resonant portions of the second resonator has a second shape and a second size; the second shape is substantially the same as the first shape; and the second size is substantially the same as the first size.

[0121] Example 24: The apparatus according to any one of Examples 18 to 23, wherein the first resonator and the second resonator are substantially symmetrical about the transverse axis of the semiconductor body.

[0122] Example 25: The apparatus according to any one of Examples 18 to 24, wherein the first resonator and the second resonator are oriented relative to each other with a different orientation angle.

[0123] Example 26: The apparatus according to any one of Examples 18 to 25, wherein: the first resonator resonates at the first resonant frequency to exhibit first sound wave propagation in a first direction; the second resonator resonates at the second resonant frequency to exhibit second sound wave propagation in a second direction; and the first direction and the second direction are non-parallel.

[0124] Example 27: The apparatus according to any one of Examples 18 to 26, wherein the differential orientation angle is about 45°.

[0125] Example 28: The apparatus according to any one of Examples 18 to 27, wherein the first resonant frequency exhibits a frequency change or increment of less than a predetermined amount within the predetermined temperature range.

[0126] Example 29: The apparatus according to any one of Examples 18 to 28, wherein the semiconductor body comprises monocrystalline silicon.

[0127] Example 30: The apparatus according to any one of Examples 18 to 29, wherein the corresponding resonator in the first resonator and the second resonator includes a double-ring resonator, the double-ring resonator including a first ring, a second ring and a coupling beam for coupling the first ring and the second ring.

[0128] Example 31: The apparatus according to any one of Examples 18 to 30, wherein the oscillator comprises a temperature-controlled oscillator.

[0129] Example 32: An apparatus comprising: a micromechanical system including: a semiconductor body including: a first double-ring resonator for resonating at a first resonant frequency, the first resonant frequency being substantially frequency-stable over a predetermined temperature range; a second double-ring resonator for resonating at a second resonant frequency, the second resonant frequency decreasing or increasing substantially linearly with increasing temperature over the predetermined temperature range; and a support portion for supporting both the first double-ring resonator and the second double-ring resonator, the support portion including a substantially rectangular body having at least one bend to provide a differential orientation angle between the first double-ring resonator and the second double-ring resonator.

[0130] Example 33: The apparatus according to Example 32, wherein: a corresponding resonant portion of one or more resonant portions of the first double-ring resonator has a first shape and a first size; a corresponding resonant portion of one or more resonant portions of the second double-ring resonator has a second shape and a second size; the second shape is substantially the same as the first shape; the second size is substantially the same as the first size; and the first double-ring resonator and the second double-ring resonator are substantially symmetrical about the transverse axis of the semiconductor body.

[0131] Example 34: The apparatus according to any one of Examples 32 and 33, wherein: the first double-ring resonator resonates at the first resonant frequency to exhibit first sound wave propagation in a first direction; the second double-ring resonator resonates at the second resonant frequency to exhibit second sound wave propagation in a second direction; and the first direction and the second direction are non-parallel.

[0132] Example 35: The apparatus according to any one of Examples 32 to 34, wherein: the first double-ring resonator is used to resonate at the first resonant frequency, the first resonant frequency being substantially frequency-stable, but varying substantially parabolically with increasing temperature within the predetermined temperature range according to a substantially U-shaped or parabolic curve having one of a downward opening or an upward opening, the substantially U-shaped or parabolic curve having a apex at approximately room temperature, and the first resonant frequency exhibiting a frequency change or increment of less than a predetermined amount within the predetermined temperature range.

Claims

1. An apparatus, the apparatus comprising: Microelectromechanical systems (MEMS), the microelectromechanical systems including a semiconductor body, the semiconductor body comprising: A first resonator is configured to resonate at a first resonant frequency, which is substantially frequency-stable within a predetermined temperature range. A second resonator, configured to resonate at a second resonant frequency, wherein the second resonant frequency decreases or increases substantially linearly with increasing temperature within the predetermined temperature range; and The support portion is used to support both the first resonator and the second resonator.

2. The apparatus according to claim 1, wherein: The first resonator has a first temperature coefficient of frequency; and The second resonator has a second frequency temperature coefficient, which is different from the first frequency temperature coefficient.

3. The apparatus according to claim 1, wherein: The first resonator includes a reference resonator; The second resonator includes a temperature-sensing resonator; and The support portion mechanically and thermally couples the first resonator with the second resonator.

4. The apparatus of claim 1, wherein the semiconductor body comprises: At least one first driving electrode of the first resonator; At least one first sensing electrode of the first resonator; At least one second driving electrode of the second resonator; and At least one second sensing electrode of the second resonator.

5. The apparatus according to claim 1, wherein: The respective resonant portion of one or more resonant portions of the first resonator has a first shape and a first size; The corresponding resonant portion of one or more resonant portions of the second resonator has a second shape and a second size; The second shape is substantially the same as the first shape; and The second dimension is substantially the same as the first dimension.

6. The apparatus of claim 5, wherein the first resonator and the second resonator are substantially symmetrical about the transverse axis of the semiconductor body.

7. The apparatus of claim 1, wherein the first resonator and the second resonator are oriented relative to each other at a different orientation angle.

8. The apparatus according to claim 7, wherein: The first resonator resonates at the first resonant frequency to exhibit first sound wave propagation in the first direction; The second resonator resonates at the second resonant frequency to exhibit second sound wave propagation in the second direction; and The first direction and the second direction are not parallel.

9. The apparatus of claim 7, wherein the differential orientation angle is about 45°.

10. The apparatus according to claim 1, wherein: The first resonator is used to resonate at the first resonant frequency, which varies substantially parabolically with increasing temperature within the predetermined temperature range according to a substantially U-shaped or parabolic curve having either a downward opening or an upward opening, and having a apex at approximately room temperature.

11. The apparatus of claim 10, wherein the first resonant frequency exhibits a frequency variation or increment of less than a predetermined amount within the predetermined temperature range.

12. The apparatus of claim 11, wherein the predetermined amount is 600 parts per million within the predetermined temperature range of -40°C to 90°C.

13. The apparatus of claim 1, wherein the second resonator is configured to resonate at the second resonant frequency, the second resonant frequency decreasing substantially linearly with increasing temperature within the predetermined temperature range.

14. The apparatus of claim 1, wherein the semiconductor body comprises monocrystalline silicon.

15. The apparatus of claim 1, wherein the apparatus comprises: A single die, the single die comprising the semiconductor body.

16. The apparatus of claim 1, wherein a corresponding resonator in the first resonator and the second resonator comprises a double-ring resonator, the double-ring resonator comprising a first ring, a second ring, and a coupling beam for coupling the first ring and the second ring.

17. The apparatus of claim 1, wherein the corresponding resonator in the first resonator and the second resonator includes a ring resonator, a disk resonator, a square plate resonator, a double-ended fixed resonator, a cantilever resonator, a double-ended fixed beam resonator, and a comb-driven resonator.

18. An apparatus comprising: An oscillator, the oscillator comprising: Microelectromechanical systems (MEMS), the microelectromechanical systems including a semiconductor body, the semiconductor body comprising: A first resonator is configured to resonate at a first resonant frequency, which is substantially frequency-stable within a predetermined temperature range. At least one first driving electrode of the first resonator; At least one first sensing electrode of the first resonator; A second resonator is used to resonate at a second resonant frequency, which decreases or increases substantially linearly with increasing temperature within the predetermined temperature range. At least one second driving electrode of the second resonator; At least one second sensing electrode of the second resonator; and The support portion is used to support both the first resonator and the second resonator.

19. The apparatus of claim 18, wherein the microelectromechanical system is located on the first die, the apparatus comprising: The oscillator includes: An electronic circuit, located on a second die attached to the first die, includes: A first driving circuit is configured to generate a first driving signal to drive the first resonator via the at least one first driving electrode, the first driving signal having a first driving frequency. A second driving circuit is used to generate a second driving signal to drive the second resonator via the at least one second driving electrode, the second driving signal having a second driving frequency. A digital converter circuit is configured to receive a first sensing signal from the first resonator via the at least one first sensing electrode, and convert the first sensing signal into first digital temperature data, the first sensing signal having a first sensing signal frequency, and the first digital temperature data representing a first temperature corresponding to the first sensing signal frequency; and The digital converter circuit is used to receive a second sensing signal from the second resonator via the at least one second sensing electrode, and to convert the second sensing signal into second digital temperature data, wherein the second sensing signal has a second sensing signal frequency, and the second digital temperature data represents a second temperature corresponding to the second sensing signal frequency.

20. The apparatus of claim 19, wherein the apparatus comprises: The electronic circuit includes: A temperature compensation circuit, the temperature compensation circuit being configured to generate an adjustment signal based at least in part on the ratio of the changes in the first temperature, represented by the first digital temperature data, and the second temperature, represented by the second digital temperature data, respectively; and A phase-locked loop circuit is used to adjust the frequency of the first sensing signal, at least in part, based on the adjustment signal, to generate a temperature-compensated oscillator signal.

21. The apparatus of claim 19, wherein the digital converter circuitry includes a temperature digital converter (TDC).

22. The apparatus of claim 18, wherein the support portion mechanically and thermally couples the first resonator to the second resonator.

23. The apparatus according to claim 18, wherein: The respective resonant portion of one or more resonant portions of the first resonator has a first shape and a first size; The corresponding resonant portion of one or more resonant portions of the second resonator has a second shape and a second size; The second shape is substantially the same as the first shape; and The second dimension is substantially the same as the first dimension.

24. The apparatus of claim 23, wherein the first resonator and the second resonator are substantially symmetrical about the transverse axis of the semiconductor body.

25. The apparatus of claim 18, wherein the first resonator and the second resonator are oriented with respect to each other at a different orientation angle.

26. The apparatus according to claim 25, wherein: The first resonator resonates at the first resonant frequency to exhibit first sound wave propagation in the first direction; The second resonator resonates at the second resonant frequency to exhibit second sound wave propagation in the second direction; and The first direction and the second direction are not parallel.

27. The apparatus of claim 25, wherein the differential orientation angle is about 45°.

28. The apparatus of claim 18, wherein the first resonant frequency exhibits a frequency variation or increment of less than a predetermined amount within the predetermined temperature range.

29. The apparatus of claim 18, wherein the semiconductor body comprises monocrystalline silicon.

30. The apparatus of claim 18, wherein a corresponding resonator in the first resonator and the second resonator comprises a double-ring resonator, the double-ring resonator comprising a first ring, a second ring, and a coupling beam for coupling the first ring and the second ring.

31. The apparatus of claim 18, wherein the oscillator comprises a temperature-controlled oscillator.

32. An apparatus comprising: Micromechanical system, the micromechanical system including a semiconductor body, the semiconductor body comprising: A first double-ring resonator is used to resonate at a first resonant frequency, which is approximately frequency-stable within a predetermined temperature range. A second double-ring resonator is used to resonate at a second resonant frequency, which decreases or increases substantially linearly with increasing temperature within the predetermined temperature range; and The support portion is used to support both the first double-ring resonator and the second double-ring resonator. The support portion includes a generally rectangular body with at least one bend to provide a differential orientation angle between the first double-ring resonator and the second double-ring resonator.

33. The apparatus according to claim 32, wherein: The respective resonant portion of one or more resonant portions of the first double-ring resonator has a first shape and a first size; The corresponding resonant portion of one or more resonant portions of the second double-ring resonator has a second shape and a second size; The second shape is substantially the same as the first shape; The second dimension is substantially the same as the first dimension; and The first double-ring resonator and the second double-ring resonator are substantially symmetrical about the transverse axis of the semiconductor body.

34. The apparatus according to claim 33, wherein: The first double-ring resonator resonates at the first resonant frequency to exhibit first acoustic wave propagation in the first direction; The second double-ring resonator resonates at the second resonant frequency to exhibit second sound wave propagation in the second direction; and The first direction and the second direction are not parallel.

35. The apparatus according to claim 32, wherein: The first double-ring resonator is used to resonate at the first resonant frequency, which is substantially frequency-stable, but varies substantially parabolically with increasing temperature within the predetermined temperature range according to a substantially U-shaped or parabolic curve, the substantially U-shaped or parabolic curve having either a downward opening or an upward opening, the substantially U-shaped or parabolic curve having a apex at approximately room temperature, and the first resonant frequency exhibiting a frequency change or increment of less than a predetermined amount within the predetermined temperature range.

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