MEMS device, manufacturing method thereof and electronic device

Abstract

The invention provides an MEMS device and a manufacturing method thereof, and an electronic device, the MEMS device comprising: a substrate in which a groove is formed; the pressure sensing cavity is located in the groove, a pressure sensing opening is formed in the top of the pressure sensing cavity, the bottom of the pressure sensing cavity is connected with the bottom of the groove, and the side wall of the pressure sensing cavity is defined by a first electrode layer; the at least one second electrode layer is located in the groove, the second electrode layer and the first electrode layer are correspondingly arranged at intervals, and the second electrode layer is connected with the side wall of the groove through at least one cantilever beam; when the temperature changes, the cantilever beam bends and deforms in the vertical direction so as to drive the second electrode layer to move in the vertical direction. According to the scheme, the second electrode layer is connected with the side wall of the groove through the cantilever beam, and when the temperature changes, the cantilever beam drives the second electrode layer to move in the vertical direction so as to change the opposite area of the first electrode layer and the second electrode layer, so that the capacitance change caused by the temperature change is compensated, and the measurement precision of the device is improved.

Description

Technical Field

[0001] This invention relates to the field of semiconductor technology, and more specifically to a MEMS device and its manufacturing method, and an electronic device. Background Technology

[0002] MEMS pressure sensors, fabricated using Micro-Electro-Mechanical Systems (MEMS) technology, are suitable for harsh environments such as high impact, high overload, conductivity, corrosion, and radiation, and are widely used in aerospace, electronics, industry, medical and health, and environmental monitoring fields. With continuous technological advancements, higher precision requirements are being placed on MEMS pressure sensors. Among these, capacitive pressure sensors, compared to piezoresistive pressure sensors, offer advantages such as high sensitivity, low power consumption, and good temperature characteristics, thus finding widespread application across various fields.

[0003] According to the capacitance formula, capacitive pressure sensors can be divided into three types: variable-gap, variable-area, and variable-medium. Due to their ease of implementation, variable-gap capacitive pressure sensors are the most common. Their principle is that changes in the spacing between electrode plates lead to changes in capacitance, and the integrated circuit amplifies the signal after acquiring it.

[0004] However, in variable-gap capacitive pressure sensors, the electrode plates are susceptible to temperature changes, which can cause the electrode plates to deform and change their capacitance, leading to pressure measurement errors and reducing the measurement accuracy of the device. Summary of the Invention

[0005] The summary section introduces a series of simplified concepts, which will be further explained in detail in the detailed description section. The summary section of this invention is not intended to limit the key features and essential technical features of the claimed technical solution, nor is it intended to determine the scope of protection of the claimed technical solution.

[0006] To at least partially solve the above-mentioned technical problems, the present invention provides a MEMS device, comprising:

[0007] A substrate in which grooves are formed;

[0008] A pressure-sensing cavity is located in the groove. A pressure-sensing port is formed at the top of the pressure-sensing cavity, and the bottom of the pressure-sensing cavity is connected to the bottom of the groove. The sidewalls of the pressure-sensing cavity are surrounded by a first electrode layer.

[0009] At least one second electrode layer is located in the groove and is spaced apart from the first electrode layer. The second electrode layer is connected to the sidewall of the groove by at least one cantilever beam.

[0010] When the temperature changes, the cantilever beam bends and deforms in the vertical direction, causing the second electrode layer to move in the vertical direction.

[0011] For example, the cantilever beam includes multiple structural layers stacked from bottom to top, wherein the coefficients of thermal expansion of the multiple structural layers increase or decrease sequentially from bottom to top.

[0012] For example, the cantilever beam includes a first structural layer, a second structural layer and a third structural layer stacked from bottom to top. The first structural layer is made of silicon oxide, the second structural layer is made of silicon nitride, and the third structural layer is made of metal, wherein the metal includes at least one of aluminum, copper and platinum.

[0013] For example, the thickness of the first structural layer ranges from 0.6um to 0.8um, the thickness of the second structural layer ranges from 0.2um to 0.3um, and the thickness of the third structural layer ranges from 0.8um to 1.2um.

[0014] For example, it also includes a support structure located in the groove, and the bottom of the pressure-sensing cavity is connected to the bottom of the groove through the support structure.

[0015] For example, the first electrode layer forms a polygonal structure, wherein each side of the polygonal structure is provided with a second electrode layer, and each second electrode layer and the first electrode layer of the corresponding side constitute a capacitor structure.

[0016] For example, the cantilever beam is in the shape of a spiral, a straight bar, a curve, or an arc.

[0017] Another aspect of the present invention provides a method for manufacturing a MEMS device, comprising:

[0018] A substrate is provided in which grooves are formed;

[0019] A pressure-sensing cavity, at least one second electrode layer, and a cantilever beam are formed in the groove. A pressure-sensing port is formed at the top of the pressure-sensing cavity. The bottom of the pressure-sensing cavity is connected to the bottom of the groove. The sidewall of the pressure-sensing cavity is surrounded by a first electrode layer. The second electrode layer is correspondingly spaced from the first electrode layer and connected to the sidewall of the groove through at least one cantilever beam.

[0020] When the temperature changes, the cantilever beam bends and deforms in the vertical direction, causing the second electrode layer to move in the vertical direction.

[0021] In another aspect, the present invention provides an electronic device comprising the aforementioned MEMS device.

[0022] For example, it also includes a housing, a PCB board, and an ASIC chip, wherein the housing and the PCB board form a receiving space for accommodating the ASIC chip and the MEMS device, a through hole is formed on the housing, the ASIC chip is attached to the PCB board, the MEMS device is located on the ASIC chip, and the ASIC chip is electrically connected to the PCB and the MEMS device respectively through wires.

[0023] The MEMS device and its manufacturing method and electronic device of the present invention, wherein the first electrode layer and the second electrode layer constitute a capacitor structure, and the second electrode layer is connected to the side wall of the groove through a cantilever beam. When the temperature changes, the cantilever beam drives the second electrode layer to move in the vertical direction to change the facing area of ​​the first electrode layer and the second electrode layer, thereby changing the capacitance of the capacitor structure to compensate for the capacitance change caused by the temperature change. This can greatly reduce or even eliminate the influence of temperature change on capacitance, and improve the performance and measurement accuracy of the device. Attached Figure Description

[0024] The following drawings, which are incorporated herein by reference as part of this invention, are provided for understanding the invention. The drawings illustrate embodiments of the invention and their descriptions, serving to explain the principles of the invention.

[0025] In the attached image:

[0026] Figures 1A-1H A cross-sectional schematic diagram of a MEMS device obtained by sequentially implementing a method for manufacturing a MEMS device according to an exemplary embodiment of the present invention is shown.

[0027] Figure 2 A schematic cross-sectional view of a MEMS device according to an exemplary embodiment of the present invention during the bending deformation of a cantilever beam is shown.

[0028] Figure 3 A top view of a MEMS device according to an exemplary embodiment of the present invention is shown;

[0029] Figure 4 A schematic cross-sectional view of a MEMS device under pressure according to an exemplary embodiment of the present invention is shown.

[0030] Figure 5 A flowchart illustrating a method for manufacturing a MEMS device according to an exemplary embodiment of the present invention is shown;

[0031] Figure 6 A schematic diagram of the structure of an electronic device according to an exemplary embodiment of this application is shown. Detailed Implementation

[0032] The invention will now be described more fully with reference to the accompanying drawings, which illustrate embodiments of the invention. However, the invention can be embodied in various forms and should not be construed as limited to the embodiments set forth herein. Rather, providing these embodiments will make the disclosure thorough and complete, and will fully convey the scope of the invention to those skilled in the art. In the drawings, for clarity, the dimensions and relative dimensions of layers and regions may be exaggerated. The same reference numerals denote the same elements throughout.

[0033] It should be understood that when an element or layer is referred to as "on," "adjacent to," "connected to," or "coupled to" other elements or layers, it may be directly on, adjacent to, connected to, or coupled to other elements or layers, or there may be intervening elements or layers. Conversely, when an element is referred to as "directly on," "directly adjacent to," "directly connected to," or "directly coupled to" other elements or layers, there are no intervening elements or layers. It should be understood that although the terms first, second, third, etc., may be used to describe various elements, components, areas, layers, and / or portions, these elements, components, areas, layers, and / or portions should not be limited by these terms. These terms are only used to distinguish one element, component, area, layer, or portion from another element, component, area, layer, or portion. Therefore, without departing from the teachings of this invention, the first element, component, area, layer, or portion discussed below may be referred to as the second element, component, area, layer, or portion.

[0034] Spatial relation terms such as “below,” “under,” “below,” “under,” “above,” “above,” etc., are used herein for convenience of description to describe the relationship between one element or feature shown in the figure and other elements or features. It should be understood that, in addition to the orientation shown in the figure, spatial relation terms are intended to also include different orientations of the device in use and operation. For example, if the device in the figure is flipped, then the element or feature described as “below” or “under” the other element or feature will be oriented “above” the other element or feature. Therefore, the exemplary terms “below” and “under” can include both upper and lower orientations. The device may be otherwise oriented (rotated 90 degrees or otherwise) and the spatial descriptive terms used herein will be interpreted accordingly.

[0035] The terminology used herein is for the purpose of describing particular embodiments only and is not intended to limit the invention. When used herein, the singular forms “a,” “an,” and “the” are also intended to include the plural forms unless the context clearly indicates otherwise. It should also be understood that the terms “comprise” and / or “comprising,” when used in this specification, identify the presence of the stated features, integers, steps, operations, elements, and / or components, but do not exclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and / or groups. When used herein, the term “and / or” includes any and all combinations of the associated listed items.

[0036] Embodiments of the invention are described herein with reference to cross-sectional views that serve as schematic diagrams of ideal embodiments (and intermediate structures). Thus, variations in the shape shown can be anticipated due to, for example, manufacturing techniques and / or tolerances. Therefore, embodiments of the invention should not be limited to the specific shapes of the regions shown herein, but include shape deviations due to, for example, manufacturing processes. For example, implantation regions shown as rectangular typically have rounded or curved features at their edges and / or implantation concentration gradients, rather than a binary change from implantation regions to non-implantation regions. Similarly, the buried regions formed by implantation can result in some implantation in the region between the buried region and the surface traversed during implantation. Therefore, the regions shown in the figures are substantially schematic, and their shapes are not intended to show the actual shapes of the regions of the device and are not intended to limit the scope of the invention.

[0037] Unless otherwise defined, all terms used herein (including technical and scientific terms) shall have the same meaning as commonly understood by one of ordinary skill in the art. It will also be understood that terms as defined in commonly used dictionaries shall be construed as having the meaning consistent with their meaning in the relevant field and / or the context of this specification, and shall not be interpreted in an ideal or overly formal sense, unless expressly defined herein.

[0038] To fully understand this invention, a detailed structure will be presented in the following description to illustrate the technical solution proposed by this invention. Preferred embodiments of the invention are described in detail below; however, in addition to these detailed descriptions, the invention may have other embodiments.

[0039] MEMS pressure sensors in related technologies are generally packaged together with application-specific integrated circuit (ASIC) chips, housings, and printed circuit boards (PCBs). The electrode plates in MEMS pressure sensors are generally parallel upper and lower electrode plate structures. The electrode plates are fixed around the perimeter and connected to the edge of the device chip. Due to the large fixed area, the stress when the main structure of the device chip deforms is easily transmitted to the electrode plates.

[0040] During operation, the following three temperature interference factors cause changes in the capacitance of the MEMS pressure sensor, leading to pressure measurement errors and affecting the measurement accuracy of the MEMS pressure sensor: temperature changes in the operating environment of the MEMS pressure sensor itself; temperature changes caused by encapsulation stress, i.e., stress is transferred to the MEMS pressure sensor through the encapsulation adhesive; and heat generated by the ASIC chip during operation, as the close proximity of the MEMS device and the ASIC chip causes the ASIC chip to generate heat, which also leads to temperature changes in the MEMS device.

[0041] In related technologies, a temperature sensing module is often integrated into the MEMS pressure sensor to detect its temperature. Software is then used for pre-calibration to preset adjustment parameters and reduce the impact of temperature changes on the MEMS pressure sensor. However, this method can only compensate in software, not in hardware. Furthermore, the accuracy of the adjustment parameters is low, and its compensation effect on temperature-induced capacitance changes is poor.

[0042] Therefore, in view of the aforementioned technical problems, the present invention proposes a MEMS device, comprising:

[0043] A substrate in which grooves are formed;

[0044] A pressure-sensing cavity is located in the groove. A pressure-sensing port is formed at the top of the pressure-sensing cavity, and the bottom of the pressure-sensing cavity is connected to the bottom of the groove. The sidewalls of the pressure-sensing cavity are surrounded by a first electrode layer.

[0045] At least one second electrode layer is located in the groove and is spaced apart from the first electrode layer. The second electrode layer is connected to the sidewall of the groove by at least one cantilever beam.

[0046] When the temperature changes, the cantilever beam bends and deforms in the vertical direction, causing the second electrode layer to move in the vertical direction.

[0047] In the MEMS device of the present invention, the first electrode layer and the second electrode layer constitute a capacitor structure. The second electrode layer is connected to the side wall of the groove through a cantilever beam. When the temperature changes, the cantilever beam drives the second electrode layer to move in the vertical direction to change the facing area of ​​the first electrode layer and the second electrode layer, thereby changing the capacitance of the capacitor structure to compensate for the capacitance change caused by the temperature change. This can greatly reduce or even eliminate the influence of temperature change on capacitance, and improve the performance and measurement accuracy of the device.

[0048] Example 1

[0049] Below, for reference Figures 1H to 4 The MEMS devices in the embodiments of this application are described. Wherein, Figure 1H A cross-sectional schematic diagram of a MEMS device according to an exemplary embodiment of the present invention is shown. Figure 2 This diagram shows a cross-sectional view of a MEMS device according to an exemplary embodiment of the present invention during the bending deformation of a cantilever beam. Figure 3 A top view of a MEMS device according to an exemplary embodiment of the present invention is shown. Figure 4 A cross-sectional schematic diagram of a MEMS device under pressure according to an exemplary embodiment of the present invention is shown.

[0050] In one example, such as Figures 1H to 4 As shown, the MEMS device of this application includes a substrate 100, a pressure-sensing cavity 120, and at least one second electrode layer 150, wherein: a groove 110 is formed in the substrate 100; the pressure-sensing cavity 120 is located in the groove 110, a pressure-sensing port 130 is formed at the top of the pressure-sensing cavity 120, the bottom of the pressure-sensing cavity 120 is connected to the bottom of the groove 110, and the sidewall of the pressure-sensing cavity 120 is surrounded by a first electrode layer 140; at least one second electrode layer 150 is located in the groove 110 and is correspondingly spaced from the first electrode layer 140, and the second electrode layer 150 is connected to the sidewall of the groove 110 through at least one cantilever beam 160. Exemplarily, when the second electrode layer 150 is connected to the sidewall of the groove 110 through multiple cantilever beams 160, the multiple cantilever beams 160 are spaced apart in the vertical direction. Exemplarily, the bottom of the second electrode layer 150 is not connected to the bottom of the groove 110, so that the second electrode layer 150 has movable space in the vertical direction.

[0051] The MEMS device can be any suitable device known to those skilled in the art, such as a capacitive MEMS pressure sensor, and this application does not limit it.

[0052] In one example, the substrate 100 is a bulk silicon substrate, which can be at least one of the following materials: Si, Ge, SiGe, SiC, SiGeC, InAs, GaAs, InP, InGaAs, or other III / V compound semiconductors, including multilayer structures composed of these semiconductors, or silicon-on-insulator (SOI), silicon-on-insulator stacked (SSOI), silicon-on-insulator stacked (S-SiGeOI), silicon-on-insulator (SiGeOI), and germanium-on-insulator (GeOI), etc. Exemplarily, the top and bottom structures of the pressure-sensing cavity 120 can be made of silicon or any other suitable material, and this application does not impose any limitations on this.

[0053] In one example, the first electrode layer 140 and the second electrode layer 150 are made of materials such as doped polycrystalline silicon and SiGe, and are not limited to one of them.

[0054] In one example, such as Figures 1H to 4 As shown, the groove 110 can extend downward from the upper surface of the substrate 100 to a predetermined depth. The groove 110 is obtained by etching away a portion of the substrate 100. Common etching processes in the art can be used to remove the portion of the substrate 100 to form the groove 110. For example, dry etching or wet etching processes can be used to remove the portion of the substrate 100 to form the groove 110. Exemplarily, the depth and size of the groove 110 should be reasonably set according to actual needs, and this application does not impose any limitations on this.

[0055] In one example, with Figure 2 The temperature of the MEMS device shown is greater than Figure 1HTaking the temperature of the MEMS device as an example, during actual measurement, due to the increase in temperature of the MEMS device (e.g., temperature increase caused by packaging stress, operating temperature increase, ASIC chip heating, etc.), the substrate 100 (i.e., the main structure of the MEMS device) will undergo thermal expansion in the horizontal direction. This expansion, via the cantilever beam 160, causes the second electrode layer 150 to move closer to the first electrode layer 140 in the horizontal direction. This reduces the distance between the first electrode layer 140 and the second electrode layer 150, increasing the capacitance of the capacitor structure formed by the first electrode layer 140 and the second electrode layer 150. This can lead to pressure measurement errors and consequently, reduced measurement accuracy. At this point, the cantilever beam 160 bends downwards from its undeformed state, causing the second electrode layer 150 to move downwards. This reduces the facing area of ​​the first electrode layer 140 and the second electrode layer 150, further decreasing the capacitance of the capacitor structure. This partially or completely offsets the capacitance change caused by the temperature increase, significantly reducing or even eliminating the impact of temperature changes on capacitance, thus improving device performance and measurement accuracy. Exemplarily, the cantilever beam 160 can also bend upward to move the second electrode layer 150 upward, thereby changing the facing area of ​​the first electrode layer 140 and the second electrode layer 150. Exemplarily, the end of the cantilever beam 160 connected to the substrate 100 is a fixed end, and the fixed end of the cantilever beam 160 will not move relative to the substrate 100 with temperature changes.

[0056] For example, the cantilever beam 160 can be determined to be in an undeformed state at a certain lower preset temperature, and the facing area of ​​the first electrode layer 140 and the second electrode layer 150 at this preset temperature can be determined. In actual measurement, due to packaging stress and heat generation, the temperature of the MEMS device is generally higher than or equal to this preset temperature, meaning the distance between the first electrode layer 140 and the second electrode layer 150 will decrease. At this time, the cantilever beam 160 undergoes bending deformation to reduce the facing area of ​​the first electrode layer 140 and the second electrode layer 150, thereby partially or even completely offsetting the change in capacitance caused by the temperature increase. It is worth noting that when the cantilever beam 160 is undeformed, the facing area of ​​the first electrode layer 140 and the second electrode layer 150 is not limited to the maximum facing area.

[0057] In one example, the cantilever beam 160 includes multiple structural layers stacked from bottom to top, wherein the coefficients of thermal expansion of the multiple structural layers increase or decrease sequentially from bottom to top. Exemplarily, when the coefficients of thermal expansion of the multiple structural layers increase sequentially from bottom to top, the structural layer with the larger coefficient of thermal expansion expands more as the temperature rises, causing the cantilever beam 160 to bend downwards as a whole. Exemplarily, when the coefficients of thermal expansion of the multiple structural layers decrease sequentially from bottom to top, the cantilever beam 160 bends upwards as the temperature rises.

[0058] In one example, the cantilever beam 160 may be in the form of a spiral, a straight bar, a curve, or an arc, or any other suitable shape, which is not limited in this application.

[0059] In one example, such as Figure 1H , Figure 2 as well as Figure 4 As shown, the cantilever beam 160 includes a first structural layer 161, a second structural layer 162, and a third structural layer 163 stacked from bottom to top. The first structural layer 161 is made of silicon oxide, the second structural layer 162 is made of silicon nitride, and the third structural layer 163 is made of metal, including at least one of aluminum, copper, and platinum. In other embodiments, the first structural layer 161, the second structural layer 162, and the third structural layer 163 can be made of any other suitable material, and this application does not impose any limitations on this. For example, taking the first structural layer 161 as silicon oxide, the second structural layer 162 as silicon nitride, and the third structural layer 163 as copper, the coefficients of thermal expansion of the first structural layer 161, the second structural layer 162, and the third structural layer 163 increase sequentially. When the temperature rises, the cantilever beam 160 bends downwards as a whole.

[0060] In one example, the thickness of the first structural layer 161 ranges from 0.6 μm to 0.8 μm, the thickness of the second structural layer 162 ranges from 0.2 μm to 0.3 μm, and the thickness of the third structural layer 163 ranges from 0.8 μm to 1.2 μm. In other embodiments, the first structural layer 161, the second structural layer 162, and the third structural layer 163 can also be of any suitable thickness.

[0061] In one example, the cantilever beam 160 includes multiple structural layers. By utilizing the difference in the thermal expansion coefficients of the different structural layers, under the corresponding temperature environment, the different thermal expansion coefficients can cause the cantilever beam 160 to bend and deform in the vertical direction to change the facing area of ​​the first electrode layer 140 and the second electrode layer 150. Meanwhile, since the coefficient of thermal expansion is a fixed parameter of the material and remains consistent within the operating temperature range, the deformation of the cantilever beam 160 in the vertical direction (or the displacement value in the vertical direction of the end of the cantilever beam 160 connected to the second electrode layer 150) has a one-to-one correspondence with the temperature change. That is, the change in the area of ​​the first electrode layer 140 and the second electrode layer 150 facing each other (the change in the facing area affects the change in capacitance) has a one-to-one correspondence with the temperature change. Therefore, by selecting a material with a suitable coefficient of thermal expansion and a cantilever beam 160 with suitable dimensions (selected through calculation and simulation) to make the cantilever beam 160 produce the expected deformation, the change in capacitance caused by temperature change can be accurately compensated, thereby minimizing the impact of temperature change on capacitance and improving the performance and measurement accuracy of MEMS devices. For example, this application can achieve self-compensation for temperature in hardware and can also be combined with software compensation schemes in related technologies. That is, the scheme of this application can be matched with back-end marking and software processing to further enhance the self-compensation effect for temperature.

[0062] In one example, electrode plates in related technologies are generally fixed on all four sides. When temperatures change, compression or stretching can easily occur on the electrode plates, leading to irregular wrinkling or even chaotic wavy deformation, making it impossible to calculate temperature correspondence. In this application, the second electrode layer 150 is connected to the sidewall of the groove 110 via at least one cantilever beam 160 (e.g., two cantilever beams 160). Compared to the fixed electrode plates in related technologies, the second electrode layer 150 does not experience wavy wrinkling deformation due to temperature changes; it only undergoes slight elongation deformation. This reduces the impact of temperature changes on the morphology of the second electrode layer 150 and facilitates the calculation of changes in the spacing between the first electrode layer 140 and the second electrode layer 150 caused by temperature changes, improving compensation accuracy.

[0063] In one example, such as Figure 1H , Figure 2 and Figure 4As shown, the MEMS device of this application also includes a support structure 170 located in the groove 110, and the bottom of the pressure-sensing cavity 120 is connected to the bottom of the groove 110 through the support structure 170. Exemplarily, compared to a direct connection between the bottom of the pressure-sensing cavity 120 and the bottom of the groove 110, the connection of the bottom of the pressure-sensing cavity 120 to the bottom of the groove 110 through the support structure 170 provides better thermal isolation, effectively reducing the deformation of the electrode layer caused by temperature transfer (ASIC chip heating, temperature transfer from the substrate 100, etc.). Exemplarily, the support structure 170 is made of conventional insulating materials such as silicon, and this application does not impose any limitations on this.

[0064] In one example, the first electrode layer 140 forms a polygonal structure, such as a quadrilateral, pentagon, hexagon, or octagon. Each side of the polygonal structure corresponds to a second electrode layer 150, and each second electrode layer 150 and the corresponding first electrode layer 140 on each side constitute a capacitor structure. Figure 3 As shown, the first electrode layer 140 forms a hexagon, and six second electrode layers 150 are provided. Each second electrode layer 150 and the corresponding first electrode layer 140 on each side constitute a capacitor structure. Exemplarily, compared to MEMS devices with a single capacitor structure, MEMS devices with a multi-capacitor structure have advantages such as high consistency, strong anti-interference capability, and higher measurement accuracy. Exemplarily, an insulating layer may also be provided between adjacent first electrode layers 140. Exemplarily, the multiple second electrode layers 150 are spaced apart.

[0065] In one example, taking a MEMS pressure sensor as an example, such as... Figure 4 As shown, the pressure-sensing port 130 at the top of the pressure-sensing cavity 120 is connected to the external environment, allowing external pressure signals to enter the pressure-sensing cavity 120 through the pressure-sensing port 130. This causes deformation of the first electrode layer 140, reducing the distance between the first electrode layer 140 and the second electrode layer 150, thereby changing the capacitance of the capacitor structure formed by the first electrode layer 140 and the second electrode layer 150. Simultaneously, circuitry and signal processing techniques (e.g., using a capacitor-to-voltage converter or a capacitor-to-frequency converter) can be used to convert the capacitance change into a readable electrical signal. This electrical signal can be further measured and processed, and ultimately output in a suitable form, such as voltage, current, or frequency. By measuring the output electrical signal, pressure measurement is achieved.

[0066] This concludes the introduction to the structure of the MEMS device of the present invention. A complete MEMS device may also include other constituent structures, which will not be described in detail here.

[0067] In summary, the MEMS device of the present invention comprises a first electrode layer and a second electrode layer forming a capacitor structure. The second electrode layer is connected to the sidewall of the groove via a cantilever beam. When the temperature changes, the cantilever beam moves the second electrode layer vertically to change the facing area of ​​the first and second electrode layers, thereby changing the capacitance of the capacitor structure to compensate for the capacitance change caused by temperature variation. This significantly reduces or even eliminates the impact of temperature change on capacitance, improving device performance and measurement accuracy. For example, the bottom of the pressure-sensing cavity is connected to the bottom of the groove via a support structure, providing better thermal isolation. For example, the first electrode layers form a polygon, with a second electrode layer corresponding to each side of the polygon, forming multiple capacitor structures. This results in high consistency, strong anti-interference capability, and higher measurement accuracy.

[0068] Example 2

[0069] In another embodiment of the present invention, a method for manufacturing a MEMS device is also provided, the method being used to manufacture the MEMS device described in Embodiment 1.

[0070] The following reference Figures 1A to 5 This application describes a method for manufacturing a MEMS device according to embodiments. For example... Figure 1A As shown, first, step S1 is performed, providing a substrate 100, in which a groove 110 is formed.

[0071] The MEMS device can be any suitable device known to those skilled in the art, such as a capacitive MEMS pressure sensor, and this application does not limit it.

[0072] In one example, substrate 100 is a bulk silicon substrate, which can be at least one of the following materials: Si, Ge, SiGe, SiC, SiGeC, InAs, GaAs, InP, InGaAs, or other III / V compound semiconductors, and also includes multilayer structures composed of these semiconductors, or silicon-on-insulator (SOI), silicon-on-insulator stacked (SSOI), silicon-on-insulator stacked (S-SiGeOI), silicon-on-insulator (SiGeOI), and germanium-on-insulator (GeOI), etc. Exemplarily, substrate 100 includes a semiconductor substrate and an epitaxial layer formed on the semiconductor substrate by an epitaxial process, wherein the thickness of the semiconductor substrate ranges from 400um to 725um, and the thickness of the epitaxial layer ranges from 30um to 200um. Alternatively, the semiconductor substrate and the epitaxial layer can also be any other suitable thickness range, which should be reasonably set according to actual needs, and this application does not limit this. In one example, such as Figure 1AAs shown, the groove 110 extends downward from the upper surface of the substrate 100 to a predetermined depth. The groove 110 is obtained by etching away a portion of the substrate 100. Common etching processes in the art can be used to remove part of the substrate 100 to form the groove 110; for example, dry etching or wet etching processes can be used. Exemplarily, the depth and size of the groove 110 should be reasonably set according to actual needs, and this application does not impose any limitations in this regard. Exemplarily, as... Figure 1A As shown, when etching the substrate 100 to form the groove 110, a support structure 170 located at the bottom of the groove 110 can also be formed by conventional etching processes such as photolithography.

[0073] Next, step S2 is performed, in which a pressure-sensing cavity 120, at least one second electrode layer 150 and a cantilever beam 160 are formed in the groove 110. A pressure-sensing port 130 is formed on the top of the pressure-sensing cavity 120, and the bottom of the pressure-sensing cavity 120 is connected to the bottom of the groove 110. The sidewall of the pressure-sensing cavity 120 is surrounded by the first electrode layer 140. The second electrode layer 150 is correspondingly spaced from the first electrode layer 140 and connected to the sidewall of the groove 110 through at least one cantilever beam 160. When the temperature changes, the cantilever beam 160 bends and deforms in the vertical direction to drive the second electrode layer 150 to move in the vertical direction.

[0074] In one example, such as Figure 1A As shown, the pressure-sensing cavity 120, pressure-sensing port 130, first electrode layer 140, second electrode layer 150, and cantilever beam 160 can be formed in the groove 110 using various deposition and etching processes commonly used in the art. Exemplarily, the top and bottom structures of the pressure-sensing cavity 120 can be made of silicon or any other suitable material, and this application does not limit this.

[0075] Specifically, such as Figures 1B to 1H As shown, the pressure-sensing cavity 120, pressure-sensing port 130, first electrode layer 140, second electrode layer 150, and cantilever beam 160 can be formed in the groove 110 through the following steps:

[0076] First, such as Figure 1B As shown, a sacrificial material, such as silicon oxide, is deposited at the bottom of the groove 110 to form a sacrificial layer 180. The top surface of the sacrificial layer 180 formed in this step is flush with the top surface of the support structure 170 (if the support structure 170 is not formed, the sacrificial layer 180 still needs to be formed in this step so that the cantilever beam 160 formed subsequently is suspended in the groove 110). The sacrificial material can be deposited using deposition processes commonly used in the art, such as plasma-enhanced chemical vapor deposition (PECVD), low-pressure chemical vapor deposition (LPCVD), physical vapor deposition, or atomic layer deposition (ALD).

[0077] Next, as Figure 1C As shown, taking the connection between each second electrode layer 150 and the sidewall of the groove 110 via two cantilever beams 160 as an example, the lower cantilever beam 160 of the two cantilever beams 160 is formed first. For example, as... Figure 1C As shown, taking a cantilever beam 160 comprising a first structural layer 161, a second structural layer 162, and a third structural layer 163 stacked from bottom to top as an example, the first structural layer 161, the second structural layer 162, and the third structural layer 163 can be sequentially formed on the sacrificial layer 180 first, and then etched using an etching process to form the cantilever beam 160. Exemplarily, the material of the first structural layer 161 includes silicon oxide, the material of the second structural layer 162 includes silicon nitride, and the material of the third structural layer 163 includes a metal (e.g., at least one of aluminum, copper, and platinum). When the material of the first structural layer 161 is silicon oxide, high-density silicon oxide can be deposited using the LPCVD method to form the first structural layer 161. Because this silicon oxide has a high density, the first structural layer 161 is hardly damaged during the subsequent etching and removal of the silicon oxide sacrificial layer 180, thereby ensuring the structural integrity of the cantilever beam 160. Exemplarily, the first structural layer 161, the second structural layer 162, and the third structural layer 163 can be formed using deposition processes commonly used in the art, such as plasma-enhanced chemical vapor deposition (PECVD), low-pressure chemical vapor deposition (LPCVD), physical vapor deposition, or atomic layer deposition (ALD). Exemplarily, before forming the cantilever beam 160, the process may further include the steps of forming the bottom structure of the pressure-sensing cavity on the supporting structure, and continuing to deposit sacrificial material on the sacrificial layer 180 and the bottom structure of the pressure-sensing cavity to form a new sacrificial layer 180, the top surface of which is higher than the top surface of the bottom structure of the pressure-sensing cavity.

[0078] Next, as Figure 1D As shown, sacrificial material continues to be deposited on the cantilever beam 160 and the sacrificial layer 180 to form a new sacrificial layer 180.

[0079] Next, as Figure 1E As shown, the upper cantilever beam 160 of the two cantilever beams 160 is formed on the sacrificial layer 180. The specific steps for forming the cantilever beam 160 can be referred to above, and will not be repeated here.

[0080] Next, as Figure 1FAs shown, sacrificial material is deposited to form a new sacrificial layer 180, the top surface of which is flush with the top of the groove 110. Part of the sacrificial layer 180 is etched away to form a first trench 191 and a second trench 192 in the areas where the first electrode layer 140 and the second electrode layer 150 are to be formed, respectively. The first trench 191 and the second trench 192 are spaced apart, the sidewall of the first trench 191 communicates with the bottom structure of the pressure-sensing cavity, and the sidewall of the second trench 192 communicates with the cantilever beam 160. The etching process commonly used in the art can be used to etch away part of the sacrificial layer 180 to form the first trench 191 and the second trench 192; this application does not limit this process.

[0081] Next, as Figure 1G As shown, a first electrode layer 140 is formed in a first trench 191 and a second electrode layer 150 is formed in a second trench 192, wherein the first electrode layer 140 surrounds the sidewall of the pressure-sensing cavity. Exemplarily, the first electrode layer 140 and the second electrode layer 150 can be formed using deposition processes commonly used in the art, such as plasma-enhanced chemical vapor deposition (PECVD), low-pressure chemical vapor deposition (LPCVD), physical vapor deposition, or atomic layer deposition (ALD). Exemplarily, the process further includes forming a lead structure electrically connecting the first electrode layer 140 and the second electrode layer 150 on the sidewalls of the first electrode layer 140 and the second electrode layer 150 through etching and deposition processes. This lead structure is used to lead out the first electrode layer 140 and the second electrode layer 150, wherein the material of the lead structure includes, but is not limited to, Au.

[0082] Next, the sacrificial layer 180 of the area surrounded by the first electrode layer 140 is etched away, and the top structure of the pressure-sensing cavity is formed by deposition process. Then, the top structure of the pressure-sensing cavity is etched away by etching process to form a pressure-sensing port that penetrates the top structure of the pressure-sensing cavity.

[0083] Finally, the sacrificial layer 180 is removed by etching to obtain the desired result. Figure 1HThe MEMS device shown includes: a recess 110 formed in a substrate 100; a pressure-sensing cavity 120 located in the recess 110, with a pressure-sensing port 130 formed at the top of the pressure-sensing cavity 120, and the bottom of the pressure-sensing cavity 120 connected to the bottom of the recess 110; the sidewalls of the pressure-sensing cavity 120 are surrounded by a first electrode layer 140; at least one second electrode layer 150 is located in the recess 110 and is correspondingly spaced from the first electrode layer 140, and the second electrode layer 150 is connected to the sidewalls of the recess 110 via at least one cantilever beam 160. The sacrificial layer 180 can be removed using a wet etching process; more specifically, a buffer oxide etchant (BOE) can be used to remove the sacrificial layer 180, or gaseous hydrogen fluoride (VHF) can be used to remove the sacrificial layer 180.

[0084] In one example, the cantilever beam 160 includes multiple structural layers stacked from bottom to top, wherein the coefficients of thermal expansion of the multiple structural layers increase or decrease sequentially from bottom to top. Exemplarily, when the coefficients of thermal expansion of the multiple structural layers increase sequentially from bottom to top, the structural layer with the larger coefficient of thermal expansion expands more as the temperature rises, causing the cantilever beam 160 to bend downwards as a whole. Exemplarily, when the coefficients of thermal expansion of the multiple structural layers decrease sequentially from bottom to top, the cantilever beam 160 bends upwards as the temperature rises.

[0085] In one example, the cantilever beam 160 may be in the form of a spiral, a straight bar, a curve, or an arc, or any other suitable shape, which is not limited in this application.

[0086] In one example, such as Figure 1H , Figure 2 as well as Figure 4 As shown, the cantilever beam 160 includes a first structural layer 161, a second structural layer 162, and a third structural layer 163 stacked from bottom to top. The first structural layer 161 is made of silicon oxide, the second structural layer 162 is made of silicon nitride, and the third structural layer 163 is made of metal, including at least one of aluminum, copper, and platinum. In other embodiments, the first structural layer 161, the second structural layer 162, and the third structural layer 163 can also be made of any other suitable material, and this application does not impose any limitations on this. For example, taking the first structural layer 161 as silicon oxide, the second structural layer 162 as silicon nitride, and the third structural layer 163 as copper, the coefficients of thermal expansion of the first structural layer 161, the second structural layer 162, and the third structural layer 163 increase sequentially. When the temperature rises, the cantilever beam 160 bends downwards as a whole.

[0087] In one example, the thickness of the first structural layer 161 ranges from 0.6 μm to 0.8 μm, the thickness of the second structural layer 162 ranges from 0.2 μm to 0.3 μm, and the thickness of the third structural layer 163 ranges from 0.8 μm to 1.2 μm. In other embodiments, the first structural layer 161, the second structural layer 162, and the third structural layer 163 can also be of any suitable thickness.

[0088] In one example, the cantilever beam 160 includes multiple structural layers. By utilizing the difference in the thermal expansion coefficients of the different structural layers, under the corresponding temperature environment, the different thermal expansion coefficients can cause the cantilever beam 160 to bend and deform in the vertical direction to change the facing area of ​​the first electrode layer 140 and the second electrode layer 150. Meanwhile, since the coefficient of thermal expansion is a fixed parameter of the material and remains consistent within the operating temperature range, the deformation of the cantilever beam 160 in the vertical direction (or the displacement value in the vertical direction of the end of the cantilever beam 160 connected to the second electrode layer 150) has a one-to-one correspondence with the temperature change. That is, the change in the area of ​​the first electrode layer 140 and the second electrode layer 150 facing each other (the change in the facing area affects the change in capacitance) has a one-to-one correspondence with the temperature change. Therefore, by selecting a material with a suitable coefficient of thermal expansion and a cantilever beam 160 with suitable dimensions (selected through calculation and simulation) to make the cantilever beam 160 produce the expected deformation, the change in capacitance caused by temperature change can be accurately compensated, thereby minimizing the impact of temperature change on capacitance and improving the performance and measurement accuracy of MEMS devices. For example, this application can achieve self-compensation for temperature in hardware and can also be combined with software compensation schemes in related technologies. That is, the scheme of this application can be matched with back-end marking and software processing to further enhance the self-compensation effect for temperature.

[0089] In one example, electrode plates in related technologies are generally fixed on all four sides. When temperatures change, compression or stretching can easily occur on the electrode plates, leading to irregular wrinkling or even chaotic wavy deformation, making it impossible to calculate temperature correspondence. In this application, the second electrode layer 150 is connected to the sidewall of the groove 110 via at least one cantilever beam 160 (e.g., two cantilever beams 160). Compared to the fixed electrode plates in related technologies, the second electrode layer 150 does not experience wavy wrinkling deformation due to temperature changes; it only undergoes slight elongation deformation. This reduces the impact of temperature changes on the morphology of the second electrode layer 150 and facilitates the calculation of changes in the spacing between the first electrode layer 140 and the second electrode layer 150 caused by temperature changes, improving compensation accuracy.

[0090] In one example, such as Figure 1H , Figure 2 and Figure 4As shown, this application also forms a support structure 170 located in the groove 110, and the bottom of the pressure-sensing cavity 120 is connected to the bottom of the groove 110 through the support structure 170. Exemplarily, compared to a direct connection between the bottom of the pressure-sensing cavity 120 and the bottom of the groove 110, the connection of the bottom of the pressure-sensing cavity 120 to the bottom of the groove 110 via the support structure 170 provides better thermal isolation, effectively reducing the deformation of the electrode layer caused by temperature transfer (ASIC chip heating, temperature transfer of the substrate 100, etc.). Exemplarily, the support structure 170 is made of conventional insulating materials such as silicon, and this application does not limit this.

[0091] In one example, the first electrode layer 140 forms a polygonal structure, such as a quadrilateral, pentagon, hexagon, or octagon. Each side of the polygonal structure corresponds to a second electrode layer 150, and each second electrode layer 150 and the corresponding first electrode layer 140 on each side constitute a capacitor structure. Figure 3 As shown, the first electrode layer 140 forms a hexagon, and six second electrode layers 150 are provided. Each second electrode layer 150 and the corresponding first electrode layer 140 on each side constitute a capacitor structure. For example, compared with MEMS devices with a single capacitor structure, MEMS devices with a multi-capacitor structure have advantages such as high consistency and strong anti-interference ability, and higher measurement accuracy.

[0092] This concludes the description of the key steps in the manufacturing method of the MEMS device of the present invention. Other steps may also be included in the manufacturing of a complete MEMS device, which will not be elaborated here.

[0093] In summary, the MEMS device manufacturing method of the present invention comprises a first electrode layer and a second electrode layer forming a capacitor structure. The second electrode layer is connected to the sidewall of the groove via a cantilever beam. When the temperature changes, the cantilever beam moves the second electrode layer vertically to change the facing area of ​​the first and second electrode layers, thereby changing the capacitance of the capacitor structure to compensate for the capacitance change caused by temperature variation. This significantly reduces or even eliminates the impact of temperature change on capacitance, improving device performance and measurement accuracy. Exemplarily, a support structure is also formed, with the bottom of the pressure-sensing cavity connected to the bottom of the groove via the support structure, providing better thermal isolation. Exemplarily, the first electrode layer forms a polygon, with each side of the polygon corresponding to a second electrode layer, forming multiple capacitor structures. This results in high consistency, strong anti-interference capability, and higher measurement accuracy.

[0094] Example 3

[0095] In another embodiment of the present invention, an electronic device is also provided, including the MEMS device 10 described above.

[0096] In one example, such as Figure 6 As shown, the electronic device of this application also includes a housing 20, a PCB board 30, and an ASIC chip 40. The housing 20 and the PCB board 30 form a receiving space for accommodating the ASIC chip 40 and the MEMS device 10. A through-hole 21 is formed on the housing 20. The ASIC is attached to the PCB board 30, and the MEMS device 10 is located on the ASIC chip 40. The ASIC chip 40 is electrically connected to the PCB board 30 and the MEMS device 10 through wires. Exemplarily, the through-hole 21 communicates with the external environment so that external signals can act on the MEMS device 10 through the through-hole 21.

[0097] The electronic device in this embodiment can be any electronic product or device such as a mobile phone, tablet computer, laptop computer, netbook, game console, television, VCD player, DVD player, navigator, camera, camcorder, voice recorder, MP3 player, MP4 player, PSP, etc., or any intermediate product including the aforementioned MEMS device. The electronic device in this embodiment of the invention has better performance due to the use of the aforementioned MEMS device.

[0098] Although several embodiments have been described herein, it should be understood that many other modifications and embodiments will be conceived by those skilled in the art, all of which will fall within the spirit and scope of the disclosed concept. More particularly, various modifications and changes can be made in terms of the arrangement and / or components of the subject matter within the scope of the disclosure, drawings, and appended claims. In addition to modifications and changes in components and / or arrangement, the use of alternative methods will also be obvious to those skilled in the art.

Claims

1. A MEMS device, characterized by, The application relates to a MEMS device and a manufacturing method thereof. The application relates to a MEMS device and a manufacturing method thereof. The application relates to a MEMS device and a manufacturing method thereof. The application relates to a MEMS device and a manufacturing method thereof. The application relates to a MEMS device and a manufacturing method thereof.

2. The MEMS device of claim 1, wherein, The application relates to a MEMS device and a manufacturing method thereof.

3. The MEMS device of claim 2, wherein, The application relates to a MEMS device and a manufacturing method thereof.

4. The MEMS device of claim 3, wherein, The application relates to a MEMS device and a manufacturing method thereof.

5. The MEMS device of claim 1, wherein, The application relates to a MEMS device and a manufacturing method thereof.

6. The MEMS device of claim 1, wherein, The application relates to a MEMS device and a manufacturing method thereof.

7. The MEMS device of claim 1, wherein, The application relates to a MEMS device and a manufacturing method thereof.

8. A method of manufacturing a MEMS device, characterized by, The application relates to a MEMS device and a manufacturing method thereof. The application relates to a MEMS device and a manufacturing method thereof. The application relates to a MEMS device and a manufacturing method thereof. The application relates to a MEMS device and a manufacturing method thereof.

9. An electronic device, comprising: The application relates to a MEMS device and a manufacturing method thereof. 10.The electronic device of claim 9, wherein, The application relates to a MEMS device and a manufacturing method thereof. The application relates to a MEMS device and a manufacturing method thereof. The application relates to a MEMS device and a manufacturing method thereof. The application relates to a MEMS device and a manufacturing method thereof. The application relates to a MEMS device and a manufacturing method thereof. The application relates to a MEMS device and a manufacturing method thereof. The application relates to a MEMS device and a manufacturing method thereof. The application relates to a MEMS device and a manufacturing method thereof. The application relates to a MEMS device and a manufacturing method thereof. The application relates to a MEMS device and a manufacturing method thereof. 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