High-compatibility heterogeneous integration method

Abstract

The invention provides a high-compatibility heterogeneous integration method, which comprises the following steps of: adopting a form-variable dielectric layer as a medium, stably combining a non-standard-size functional layer in any shape with a support substrate, performing heterogeneous integration with other functional layers, and finally removing the form-variable dielectric layer and the support substrate, thereby obtaining the high-compatibility heterogeneous integration method. Therefore, heterogeneous integration of unconventional-size materials which are difficult to integrate by a standard MEMS platform standard process is realized, and heterogeneous integration of special materials which are not compatible with the MEMS platform standard process is promoted.

Description

Technical Field

[0001] This invention belongs to the field of semiconductor technology and relates to a highly compatible heterogeneous integration method. Background Technology

[0002] Heterogeneous integration technology aims to combine modules with different processes, materials, and functions to obtain a multifunctional, high-performance new material platform that breaks through the physical limitations of a single material. For this reason, heterogeneous integration technology has become a key technology in many cutting-edge scientific and technological fields.

[0003] However, heterogeneous integration of modules with different characteristics, different sizes, and incompatible with existing MEMS standard process sizes is not easy. In terms of material-side heterogeneous integration technology, there is usually a need for heterogeneous integration of materials with non-standard wafer sizes, but it is difficult to complete when they are incompatible with traditional MEMS processes.

[0004] Therefore, how to provide a highly compatible heterogeneous integration method to achieve heterogeneous integration of materials with unconventional sizes and promote the heterogeneous integration of special materials that are incompatible with MEMS standard processes has become a technical problem that urgently needs to be solved by those skilled in the art. Summary of the Invention

[0005] In view of the shortcomings of the prior art described above, the purpose of this invention is to provide a highly compatible heterogeneous integration method to solve the problem that non-standard sized materials that are incompatible with MEMS standard processes cannot be heterogeneously integrated in the prior art.

[0006] To achieve the above and other related objectives, the present invention provides a highly compatible heterogeneous integration method, comprising the following steps:

[0007] A support substrate is provided, and a morphology-variable dielectric layer is formed on the support substrate. The morphology-variable dielectric layer is capable of switching between solid and non-solid states, wherein the morphology-variable dielectric layer is spin-coated onto the support substrate when it is in a non-solid state.

[0008] A first functional layer is provided, which is placed on the morphologically variable medium layer when the morphologically variable medium layer is non-solid, and the morphologically variable medium layer is transformed into a solid state.

[0009] A second functional layer is provided, and the second functional layer and the first functional layer are bonded together.

[0010] The morphologically variable dielectric layer is transformed into a non-solid state to remove the morphologically variable dielectric layer and the supporting substrate, thereby obtaining a heterogeneous integrated structure in which the first functional layer and the second functional layer are bonded together.

[0011] Optionally, the material of the morphologically variable dielectric layer is paraffin wax, UV-curable hydrolysate, or HSQ photoresist.

[0012] Optionally, the thickness of the morphologically variable dielectric layer spin-coated onto the support substrate is 3~30 μm.

[0013] Optionally, after removing the morphologically variable dielectric layer and the supporting substrate, the method further includes a step of cleaning the heterogeneous integrated structure.

[0014] Optionally, the supporting substrate may be a semiconductor substrate, a metal substrate, or a ceramic substrate.

[0015] This invention also provides a highly compatible heterogeneous integration method, comprising the following steps:

[0016] A first support substrate is provided, and a first morphologically variable dielectric layer is formed on the first support substrate. The first morphologically variable dielectric layer is capable of switching between solid and non-solid states, wherein the first morphologically variable dielectric layer is spin-coated onto the first support substrate when it is in a non-solid state.

[0017] A first functional layer is provided, which is placed on the first morphological variable dielectric layer when the first morphological variable dielectric layer is non-solid, and the first morphological variable dielectric layer is transformed into a solid.

[0018] A second support substrate is provided, and a second morphological variable dielectric layer is formed on the second support substrate. The second morphological variable dielectric layer is capable of switching between solid and non-solid states, wherein the second morphological variable dielectric layer is spin-coated onto the second support substrate when it is in a non-solid state.

[0019] A second functional layer is provided, which is placed on the second morphological variable dielectric layer when the second morphological variable dielectric layer is non-solid, and the second morphological variable dielectric layer is transformed into a solid.

[0020] The second functional layer and the first functional layer are bonded together;

[0021] The first morphological variable dielectric layer and the second morphological variable dielectric layer are transformed into non-solid state to remove the first morphological variable dielectric layer, the second morphological variable dielectric layer, the first support substrate and the second support substrate, thereby obtaining a heterogeneous integrated structure in which the first functional layer and the second functional layer are bonded together.

[0022] Optionally, the first morphological variable dielectric layer and the second morphological variable dielectric layer are made of paraffin wax, UV-curable hydrolyzed adhesive, or HSD photoresist.

[0023] Optionally, the thickness of the first morphological variable dielectric layer spin-coated on the first support substrate is 3~30 μm, and the thickness of the second morphological variable dielectric layer spin-coated on the second support substrate is 3~30 μm.

[0024] Optionally, after removing the first morphological variable dielectric layer, the second morphological variable dielectric layer, the first support substrate, and the second support substrate, the method further includes a step of cleaning the heterogeneous integrated structure.

[0025] Optionally, the first support substrate and the second support substrate are semiconductor substrates, metal substrates or ceramic substrates.

[0026] As described above, in the highly compatible heterogeneous integration method of the present invention, a morphologically variable dielectric layer is used as a medium to stably combine a non-standard sized, arbitrarily shaped functional layer and a supporting substrate, and then heterogeneously integrates it with other functional layers. Finally, the morphologically variable dielectric layer and the supporting substrate are removed, thereby enabling the heterogeneous integration of unconventional sized materials that are difficult to integrate using standard MEMS platform processes, thus promoting the heterogeneous integration of special materials that are incompatible with standard MEMS platform processes. Attached Figure Description

[0027] Figure 1 The flowchart shown is a high-compatibility heterogeneous integration method according to Embodiment 1 of the present invention.

[0028] Figure 2 The diagram shows a support substrate provided in Embodiment 1 of the present invention, on which a morphologically variable dielectric layer is formed.

[0029] Figure 3 This is a schematic diagram showing a first functional layer provided in Embodiment 1 of the present invention, which is placed on a morphologically variable medium layer.

[0030] Figure 4 The diagram shown is a schematic diagram of a second functional layer provided in Embodiment 1 of the present invention, wherein the second functional layer and the first functional layer are bonded together.

[0031] Figure 5 The diagram shown is a schematic of removing the morphologically variable dielectric layer and the supporting substrate in Embodiment 1 of the present invention.

[0032] Figure 6 The flowchart shown is a high-compatibility heterogeneous integration method according to Embodiment 2 of the present invention.

[0033] Figure 7 The diagram shows a first support substrate provided in Embodiment 2 of the present invention, on which a first morphological variable dielectric layer is formed.

[0034] Figure 8This is a schematic diagram showing a first functional layer provided in Embodiment 2 of the present invention, which is placed on a first morphologically variable dielectric layer.

[0035] Figure 9 This is a schematic diagram showing a second support substrate provided in Embodiment 2 of the present invention, on which a second morphological variable dielectric layer is formed.

[0036] Figure 10 This is a schematic diagram showing the second functional layer provided in Embodiment 2 of the present invention, which is placed on a second-morphological variable medium layer.

[0037] Figure 11 This is a schematic diagram showing the bonding connection between the second functional layer and the first functional layer in Embodiment 2 of the present invention.

[0038] Figure 12 The diagram shown is a schematic diagram of removing the first morphological variable dielectric layer, the second morphological variable dielectric layer, the first support substrate, and the second support substrate in Embodiment 2 of the present invention.

[0039] Component labeling explanation: 1-supporting substrate, 100-first supporting substrate, 101-second supporting substrate, 2-morphologically variable dielectric layer, 200-first morphologically variable dielectric layer, 201-second morphologically variable dielectric layer, 3-first functional layer, 4-second functional layer, S1~S6-steps. Detailed Implementation

[0040] The following specific examples illustrate the implementation of the present invention. Those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific embodiments, and various details in this specification can also be modified or changed based on different viewpoints and applications without departing from the spirit of the present invention.

[0041] It should be emphasized that the term "including / comprises" as used herein refers to the presence of a feature, whole, step, or component, but does not exclude the presence or addition of one or more other features, wholes, steps, or components.

[0042] In the detailed description of embodiments of the present invention, for ease of explanation, the cross-sectional views illustrating the device structure may be partially enlarged and not to scale. Furthermore, the schematic diagrams are merely examples and should not limit the scope of protection of the present invention. In actual fabrication, the three-dimensional spatial dimensions of length, width, and depth should be included.

[0043] In the context of this application, the structure described above the first feature may include embodiments in which the first feature and the second feature are in direct contact, or embodiments in which an additional feature is disposed between the first feature and the second feature, such that the first feature and the second feature may not be in direct contact.

[0044] Please see Figures 1 to 12 It should be noted that the illustrations provided in this embodiment are only schematic representations of the basic concept of the present invention. Therefore, the drawings only show the components related to the present invention and are not drawn according to the actual number, shape and size of the components in the actual implementation. In the actual implementation, the form, quantity and proportion of each component can be arbitrarily changed, and the layout of the components may also be more complex.

[0045] Example 1

[0046] This embodiment provides a highly compatible heterogeneous integration method. Please refer to [link / reference]. Figure 1 The flowchart shown is a high-compatibility heterogeneous integration method according to Embodiment 1 of the present invention, including the following steps:

[0047] S1: Provide a support substrate, and form a morphologically variable dielectric layer on the support substrate, the morphologically variable dielectric layer being able to transform between solid and non-solid states, wherein the morphologically variable dielectric layer is spin-coated onto the support substrate when it is in a non-solid state.

[0048] S2: Provide a first functional layer, which is placed on the morphologically variable medium layer when the morphologically variable medium layer is non-solid, and transforms the morphologically variable medium layer into a solid state;

[0049] S3: Provide a second functional layer, and bond the second functional layer and the first functional layer together;

[0050] S4: Transform the morphologically variable dielectric layer into a non-solid state to remove the morphologically variable dielectric layer and the supporting substrate, thereby obtaining a heterogeneous integrated structure in which the first functional layer and the second functional layer are bonded together.

[0051] The highly compatible heterogeneous integration method in this embodiment will be described in detail below with reference to the specific accompanying drawings.

[0052] First, please refer to Figure 2 Step S1: Provide a support substrate 1, and form a morphology-variable dielectric layer 2 on the support substrate 1. The morphology-variable dielectric layer 2 can be converted between solid and non-solid states. When the morphology-variable dielectric layer 2 is non-solid, it is spin-coated onto the support substrate 1.

[0053] As an example, the supporting substrate 1 can be a semiconductor substrate, a metal substrate or a ceramic substrate, and the size of the supporting substrate 1 is a standard size that meets the standard process of the MEMS platform.

[0054] As an example, the morphologically variable dielectric layer 2 can transform between solid and non-solid (flexible) states. The morphologically variable dielectric layer 2 can be made of paraffin wax, UV-curable hydrolyzed adhesive, or HSQ (Hydrogen Silsesquioxane) photoresist, etc. Specifically, in this embodiment, the morphologically variable dielectric layer 2 is made of paraffin wax. Conventional paraffin wax is solid at room temperature, begins to flex above 80°C, and completely transforms into a fluid at 120°C. Specially customized paraffin wax can control its own flexibility temperature.

[0055] As an example, the thickness of the morphologically variable dielectric layer 2 spin-coated on the support substrate 1 is 3~30μm, for example, it can be 3μm, 5μm, 10μm, 15μm, 20μm, 25μm, 30μm, etc., and can be selected according to the requirements.

[0056] Next, please refer to Figure 3 Step S2: Provide a first functional layer 3. When the morphologically variable medium layer 2 is in a non-solid state, place the first functional layer 3 on the morphologically variable medium layer 2 and convert the morphologically variable medium layer 2 into a solid state.

[0057] As an example, the size of the first functional layer 3 does not exceed the size of the supporting substrate 1, and the first functional layer 3 is a non-standard size that does not meet the standard process of the MEMS platform.

[0058] As an example, when the morphologically variable dielectric layer 2 is non-solid, the first functional layer 3 is placed on the morphologically variable dielectric layer 2, and then the morphologically variable dielectric layer 2 is transformed into a solid state. That is, after the morphologically variable dielectric layer 2 is transformed into a solid state, the first functional layer 3 is stably bonded to the supporting substrate 1.

[0059] As an example, when the surface where the first functional layer 3 and the morphologically variable dielectric layer 2 meet is relatively flat, a thickness of 3~10μm for the morphologically variable dielectric layer 2 spin-coated onto the support substrate 1 is sufficient. When the surface where the first functional layer 3 and the morphologically variable dielectric layer 2 meet has significant undulations or even localized protrusions, the thickness of the morphologically variable dielectric layer 2 spin-coated onto the support substrate 1 must be increased to cover the undulating or protruding portions and achieve a flat surface.

[0060] Next, please refer to Figure 4 Step S3: Provide a second functional layer 4 and bond the second functional layer 4 and the first functional layer 3 together.

[0061] As an example, the second functional layer 4 has a standard size that meets the standard process requirements of the MEMS platform.

[0062] As an example, the size of the first functional layer 3 is a non-standard size and does not meet the standard process of the MEMS platform. The size of the supporting substrate 1 is a standard size and meets the standard process of the MEMS platform. After the first functional layer 3 is stably bonded to the supporting substrate 1, the first functional layer 3 and the second functional layer 4 are bonded together using the standard process of the MEMS platform.

[0063] Next, please refer to Figure 5 Step S4: The morphologically variable dielectric layer 2 is converted into a non-solid state to remove the morphologically variable dielectric layer 2 and the supporting substrate 1, thereby obtaining a heterogeneous integrated structure in which the first functional layer 3 and the second functional layer 4 are bonded together.

[0064] As an example, after the morphologically variable dielectric layer 2 is transformed into a non-solid (flexible) state, the morphologically variable dielectric layer 2 and the supporting substrate 1 can be removed more easily.

[0065] As an example, when selecting the material of the morphologically variable dielectric layer 2, it is necessary to ensure that the morphological transformation temperature (flexibility temperature) of the morphologically variable dielectric layer 2 does not affect the function of the heterogeneous integrated structure.

[0066] As an example, after removing the morphologically variable dielectric layer 2 and the supporting substrate 1 to obtain the heterogeneous integrated structure in which the first functional layer 3 and the second functional layer 4 are bonded together, the morphologically variable dielectric layer 2 may remain on the heterogeneous integrated structure. The method also includes a step of cleaning the heterogeneous integrated structure to remove the remaining morphologically variable dielectric layer 2.

[0067] As an example, when the morphologically variable medium layer 2 is made of organic matter, organic cleaning is used, including chemical cleaning such as concentrated sulfuric acid, acetone, isopropanol, and anhydrous ethanol; when the morphologically variable medium layer 2 is made of inorganic non-metals or metal oxides, strong acid and strong base chemical cleaning is used, including hydrofluoric acid, hydrochloric acid, and nitric acid.

[0068] As an example, when cleaning the heterogeneous integrated structure to remove the residual morphologically variable dielectric layer 2, the cleaning process must not affect the functionality of the heterogeneous integrated structure.

[0069] As an example, the heterogeneous integrated structure can be an integration of silicon carbide and silicon, an integration of silicon carbide and silicon carbide, or an integration of silicon carbide and lithium niobate, etc., whichever is required.

[0070] As described above, in the highly compatible heterogeneous integration method of this embodiment, a morphologically variable dielectric layer is used as a medium to stably combine a non-standard sized, arbitrarily shaped functional layer and a supporting substrate, and then heterogeneously integrate it with other functional layers. Finally, the morphologically variable dielectric layer and the supporting substrate are removed, thereby enabling the heterogeneous integration of unconventional sized materials that are difficult to integrate using standard MEMS platform processes, thus promoting the heterogeneous integration of special materials that are incompatible with standard MEMS platform processes.

[0071] Example 2

[0072] This embodiment provides a highly compatible heterogeneous integration method. Please refer to [link / reference]. Figure 6 The flowchart shown is a high-compatibility heterogeneous integration method according to Embodiment 2 of the present invention, which includes the following steps:

[0073] S1: Provide a first support substrate, and form a first morphologically variable dielectric layer on the first support substrate. The first morphologically variable dielectric layer can be converted between solid and non-solid states. When the first morphologically variable dielectric layer is non-solid, it is spin-coated onto the first support substrate.

[0074] S2: Provide a first functional layer, which is placed on the first morphological variable dielectric layer when the first morphological variable dielectric layer is non-solid, and transforms the first morphological variable dielectric layer into a solid state.

[0075] S3: Provide a second support substrate, and form a second morphological variable dielectric layer on the second support substrate. The second morphological variable dielectric layer can be converted between solid and non-solid states, wherein the second morphological variable dielectric layer is spin-coated onto the second support substrate when it is non-solid state.

[0076] S4: Provide a second functional layer, which is placed on the second morphological variable dielectric layer when the second morphological variable dielectric layer is non-solid, and transforms the second morphological variable dielectric layer into a solid state;

[0077] S5: Bond the second functional layer and the first functional layer together;

[0078] S6: Convert the first morphological variable dielectric layer and the second morphological variable dielectric layer into non-solid state, so as to remove the first morphological variable dielectric layer, the second morphological variable dielectric layer, the first support substrate and the second support substrate, and obtain a heterogeneous integrated structure in which the first functional layer and the second functional layer are bonded together.

[0079] The highly compatible heterogeneous integration method in this embodiment will be described in detail below with reference to the specific accompanying drawings.

[0080] First, please refer to Figure 7Step S1: Provide a first support substrate 100, and form a first morphological variable dielectric layer 200 on the first support substrate 100. The first morphological variable dielectric layer 200 can be converted between solid and non-solid states. When the first morphological variable dielectric layer 200 is non-solid state, it is spin-coated onto the first support substrate 100.

[0081] As an example, the first support substrate 100 may be a semiconductor substrate, a metal substrate or a ceramic substrate, and the size of the first support substrate 100 is a standard size that meets the standard process of MEMS platform.

[0082] As an example, the first morphological variable dielectric layer 200 can transform between solid and non-solid (flexible) states. The first morphological variable dielectric layer 200 can be made of paraffin wax, UV-curable hydrolyzed adhesive, or HSQ (Hydrogen Silsesquioxane) photoresist, etc. Specifically, in this embodiment, the first morphological variable dielectric layer 200 is made of paraffin wax.

[0083] As an example, the thickness of the first morphologically variable dielectric layer 200 spin-coated on the first support substrate 100 is 3~30μm, for example, it can be 3μm, 5μm, 10μm, 15μm, 20μm, 25μm, 30μm, etc., and can be selected according to the requirements.

[0084] Next, please refer to Figure 8 Step S2: Provide a first functional layer 3. When the first morphological variable dielectric layer 200 is non-solid, place the first functional layer 3 on the first morphological variable dielectric layer 200 and convert the first morphological variable dielectric layer 200 into a solid state.

[0085] As an example, the size of the first functional layer 3 does not exceed the size of the first supporting substrate 100, and the first functional layer 3 is a non-standard size that does not meet the standard process of the MEMS platform.

[0086] As an example, when the first morphological variable dielectric layer 200 is non-solid, the first functional layer 3 is placed on the first morphological variable dielectric layer 200, and then the first morphological variable dielectric layer 200 is transformed into a solid state. That is, after the first morphological variable dielectric layer 200 is transformed into a solid state, the first functional layer 3 is stably bonded to the first support substrate 100.

[0087] Next, please refer to Figure 9Step S3: Provide a second support substrate 101 and form a second morphological variable dielectric layer 201 on the second support substrate 101. The second morphological variable dielectric layer 201 can be converted between solid and non-solid states. When the second morphological variable dielectric layer 201 is non-solid, it is spin-coated onto the second support substrate 101.

[0088] As an example, the second support substrate 101 can be a semiconductor substrate, a metal substrate or a ceramic substrate, and the size of the second support substrate 101 is a standard size that meets the standard process of the MEMS platform.

[0089] As an example, the second-morphic variable dielectric layer 201 can transform between solid and non-solid (flexible) states. The second-morphic variable dielectric layer 201 can be made of paraffin wax, UV-curable hydrolyzed adhesive, or HSQ (Hydrogen Silsesquioxane) photoresist, etc. Specifically, in this embodiment, the material of the second-morphic variable dielectric layer 201 is paraffin wax.

[0090] As an example, the thickness of the second morphological variable dielectric layer 201 spin-coated on the second support substrate 101 is 3~30μm, for example, it can be 3μm, 5μm, 10μm, 15μm, 20μm, 25μm, 30μm, etc., and can be selected according to the requirements.

[0091] Next, please refer to 10 and perform step S4: provide a second functional layer 4, place the second functional layer 4 on the second morphological variable dielectric layer 201 when the second morphological variable dielectric layer 201 is not solid, and transform the second morphological variable dielectric layer 201 into a solid state.

[0092] As an example, the size of the second functional layer 4 does not exceed the size of the second support substrate 101, and the second functional layer 4 is a non-standard size that does not meet the standard process of the MEMS platform.

[0093] As an example, when the second morphological variable dielectric layer 201 is non-solid, the second functional layer 4 is placed on the second morphological variable dielectric layer 201, and then the second morphological variable dielectric layer 201 is transformed into a solid state. That is, after the second morphological variable dielectric layer 201 is transformed into a solid state, the first functional layer 4 is stably bonded to the second support substrate 101.

[0094] Next, please refer to Figure 11 Step S5: Bond the second functional layer 4 and the first functional layer 3 together.

[0095] As an example, the first support substrate 100 has a standard size that meets the standard process of the MEMS platform, and the second support substrate 101 has a standard size that meets the standard process of the MEMS platform. That is, the first functional layer 3 and the second functional layer 4 are bonded together using the standard process of the MEMS platform.

[0096] Next, please refer to Figure 12 Step S6: Convert the first morphological variable dielectric layer 200 and the second morphological variable dielectric layer 201 into non-solid state to remove the first morphological variable dielectric layer 200, the second morphological variable dielectric layer 201, the first support substrate 100 and the second support substrate 101, and obtain a heterogeneous integrated structure in which the first functional layer 3 and the second functional layer 4 are bonded together.

[0097] As an example, when selecting the materials of the first morphological variable dielectric layer 200 and the second morphological variable dielectric layer 201, it is necessary to ensure that the morphological transformation temperature of the first morphological variable dielectric layer 200 and the morphological transformation temperature of the second morphological variable dielectric layer 201 do not affect the function of the heterogeneous integrated structure.

[0098] As an example, after removing the first morphological variable dielectric layer 200, the second morphological variable dielectric layer 201, the first support substrate 100, and the second support substrate 101 to obtain the heterogeneous integrated structure in which the first functional layer 3 and the second functional layer 4 are bonded together, the first morphological variable dielectric layer 200 and the second morphological variable dielectric layer 201 may remain on the heterogeneous integrated structure. The method also includes a step of cleaning the heterogeneous integrated structure to remove the remaining morphological variable dielectric layers.

[0099] As an example, when cleaning the heterogeneous integrated structure to remove the residual morphologically variable dielectric layer, the cleaning process must not affect the functionality of the heterogeneous integrated structure.

[0100] It should be noted that, without departing from the purpose of this invention, the order of operations can be adjusted as needed. For example, the first morphological variable dielectric layer 200 can be spin-coated on the first support substrate 100 and the second morphological variable dielectric layer 201 can be spin-coated on the second support substrate 101 simultaneously. The first functional layer 3 can be placed on the first morphological variable dielectric layer 200 and the second functional layer 4 can be placed on the second morphological variable dielectric layer 201 simultaneously. The first morphological variable dielectric layer 200 and the second morphological variable dielectric layer 201 can be cured simultaneously.

[0101] As an example, Embodiment 1 of the present invention is applicable to the case where one functional layer in a heterogeneous integrated structure is of a non-standard size and the other functional layer is of a standard size, and Embodiment 2 of the present invention is applicable to the case where both functional layers in a heterogeneous integrated structure are of a non-standard size.

[0102] In summary, the highly compatible heterogeneous integration method of this invention uses a morphologically variable dielectric layer as a medium to stably bond non-standard sized, arbitrarily shaped functional layers and a supporting substrate, followed by heterogeneous integration with other functional layers. Finally, the morphologically variable dielectric layer and the supporting substrate are removed. This enables the heterogeneous integration of unconventional sized materials that are difficult to integrate using standard MEMS platform processes, thereby promoting the heterogeneous integration of special materials incompatible with standard MEMS platform processes. Therefore, this invention effectively overcomes the various shortcomings of existing technologies and has high industrial applicability.

[0103] The above embodiments are merely illustrative of the principles and effects of the present invention and are not intended to limit the invention. Any person skilled in the art can modify or alter the above embodiments without departing from the spirit and scope of the present invention. Therefore, all equivalent modifications or alterations made by those skilled in the art without departing from the spirit and technical concept disclosed in the present invention should still be covered by the claims of the present invention.

Claims

1. A highly compatible heterogeneous integration method, characterized in that, Includes the following steps: A support substrate is provided, and a morphology-variable dielectric layer is formed on the support substrate. The morphology-variable dielectric layer is capable of switching between solid and non-solid states, wherein the morphology-variable dielectric layer is spin-coated onto the support substrate when it is in a non-solid state. A first functional layer is provided, which is placed on the morphologically variable medium layer when the morphologically variable medium layer is non-solid, and the morphologically variable medium layer is transformed into a solid state. A second functional layer is provided, and the second functional layer and the first functional layer are bonded together. The morphologically variable dielectric layer is transformed into a non-solid state to remove the morphologically variable dielectric layer and the supporting substrate, thereby obtaining a heterogeneous integrated structure in which the first functional layer and the second functional layer are bonded together.

2. The highly compatible heterogeneous integration method according to claim 1, characterized in that: The variable dielectric layer is made of paraffin wax, UV-curable hydrolysate, or HSQ photoresist.

3. The highly compatible heterogeneous integration method according to claim 1, characterized in that: The thickness of the morphologically variable dielectric layer spin-coated onto the supporting substrate is 3~30μm.

4. The highly compatible heterogeneous integration method according to claim 1, characterized in that: After removing the morphologically variable dielectric layer and the supporting substrate, the process further includes cleaning the heterogeneous integrated structure.

5. The highly compatible heterogeneous integration method according to claim 1, characterized in that: The supporting substrate is a semiconductor substrate, a metal substrate, or a ceramic substrate.

6. A highly compatible heterogeneous integration method, characterized in that, Includes the following steps: A first support substrate is provided, and a first morphologically variable dielectric layer is formed on the first support substrate. The first morphologically variable dielectric layer is capable of switching between solid and non-solid states, wherein the first morphologically variable dielectric layer is spin-coated onto the first support substrate when it is in a non-solid state. A first functional layer is provided, which is placed on the first morphological variable dielectric layer when the first morphological variable dielectric layer is non-solid, and the first morphological variable dielectric layer is transformed into a solid. A second support substrate is provided, and a second morphological variable dielectric layer is formed on the second support substrate. The second morphological variable dielectric layer is capable of switching between solid and non-solid states, wherein the second morphological variable dielectric layer is spin-coated onto the second support substrate when it is in a non-solid state. A second functional layer is provided, which is placed on the second morphological variable dielectric layer when the second morphological variable dielectric layer is non-solid, and the second morphological variable dielectric layer is transformed into a solid. The second functional layer and the first functional layer are bonded together; The first morphological variable dielectric layer and the second morphological variable dielectric layer are transformed into non-solid state to remove the first morphological variable dielectric layer, the second morphological variable dielectric layer, the first support substrate and the second support substrate, thereby obtaining a heterogeneous integrated structure in which the first functional layer and the second functional layer are bonded together.

7. The highly compatible heterogeneous integration method according to claim 6, characterized in that: The first morphological variable dielectric layer and the second morphological variable dielectric layer are made of paraffin wax, UV-curable hydrolyzed adhesive or HSD photoresist.

8. The highly compatible heterogeneous integration method according to claim 6, characterized in that: The thickness of the first morphological variable dielectric layer spin-coated on the first support substrate is 3~30μm, and the thickness of the second morphological variable dielectric layer spin-coated on the second support substrate is 3~30μm.

9. The highly compatible heterogeneous integration method according to claim 6, characterized in that: After removing the first morphological variable dielectric layer, the second morphological variable dielectric layer, the first support substrate, and the second support substrate, the method further includes a step of cleaning the heterogeneous integrated structure.

10. The highly compatible heterogeneous integration method according to claim 6, characterized in that: The first support substrate and the second support substrate are semiconductor substrates, metal substrates or ceramic substrates.

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