Pressure sensor and pressure sensing device

Abstract

The embodiment of the invention discloses a pressure sensor and a pressure sensing device, relates to the technical field of micro-electronic machinery, and can reduce the complexity of a process for forming the pressure sensor. The pressure sensor comprises a first substrate structure, a second substrate structure and a bonding body. The first substrate structure includes a resonant component. The second substrate structure is arranged on one side of the first substrate structure in the first direction. The bonding body is arranged between the first substrate structure and the second substrate structure and is connected with the first substrate structure and the second substrate structure. A cavity is formed between the first substrate structure and the second substrate structure, and the bonding body surrounds the cavity. Some embodiments of the present disclosure provide a pressure sensor for measuring pressure.

Description

Technical Field

[0001] This disclosure relates to the field of microelectromechanical technology, and in particular to a pressure sensor and pressure sensing device. Background Technology

[0002] Micro-Electro-Mechanical System (MEMS) pressure sensors are miniature devices with pressure detection capabilities fabricated using MEMS technology. They are mainly divided into three categories: piezoresistive, capacitive, and resonant, and can be applied in fields such as consumer electronics and industrial production.

[0003] In some implementations, the resonant pressure sensor includes a first substrate structure and a second substrate structure, with the resonant structure disposed on the first substrate structure. To form a cavity space that allows the resonant structure to resonate, a groove is formed on the side of the second substrate structure closest to the first substrate structure. This increases the complexity of the process for forming the resonant pressure sensor. Summary of the Invention

[0004] Some embodiments of this disclosure provide a pressure sensor, pressure sensing device, and electronic device, at least for reducing the complexity of the process for forming the pressure sensor.

[0005] In a first aspect, a pressure sensor is provided. The pressure sensor includes: a first substrate structure, a second substrate structure, and a bonding body. The first substrate structure includes a resonant component. The second substrate structure is disposed on one side of the first substrate structure in a first direction. The bonding body is disposed between the first substrate structure and the second substrate structure, and is connected to both the first and second substrate structures. A cavity is formed between the first substrate structure and the second substrate structure, and the bonding body surrounds the cavity.

[0006] Understandably, when a cavity is formed between the first and second substrate structures, and the bonding body surrounds the cavity, the first substrate structure, the second substrate structure, and the bonding body can collectively form a resonant cavity. This eliminates the need to form a groove on the surface of the second substrate structure near the first substrate structure during the pressure sensor formation process, simplifying the cavity formation process and reducing the complexity and cost of forming the pressure sensor. Furthermore, the absence of a groove on the surface of the second substrate structure near the first substrate structure simplifies the structure of the second substrate, facilitating the arrangement of other structures within it and further reducing the complexity of the pressure sensor formation process. For example, a relatively simple lateral interconnect structure coupled to the resonant component can be formed on the second substrate structure to further reduce the complexity of the pressure sensor formation process.

[0007] Optionally, the second substrate structure includes a first surface facing the first substrate structure. The first surface includes a contact portion that contacts the bonding body, and a middle portion surrounded by the contact portion; the middle portion is flush with the contact portion.

[0008] Optionally, the second substrate structure includes: a second substrate and a second insulating layer stacked along a direction close to the first substrate structure; the surface of the second insulating layer away from the second substrate forms a first surface of the second substrate structure.

[0009] Optionally, the resonant component is exposed within the cavity. A first distance exists between the resonant component and the relatively close surfaces of the second substrate structure. A first difference exists between the first distance and the dimension of the bond along a first direction; the absolute value of the first difference is less than or equal to 5% of the ratio of the first distance to the absolute value of the first difference.

[0010] Optionally, the chamber is a sealed chamber, and the bond body includes a solder layer with a thickness ranging from 20μm to 100μm.

[0011] Optionally, the pressure sensor further includes: a bonding pad disposed on the second substrate structure. The bonding body further includes: a first connection pattern and a second connection pattern. The first connection pattern is disposed between the first substrate structure and the solder layer. The second connection pattern is disposed between the second substrate structure and the solder layer. The second connection pattern and the bonding pad are made of the same material.

[0012] Optionally, the second substrate structure includes a conductor structure extending along a second direction, which intersects with the first direction. The pressure sensor also includes a pad disposed on the second substrate structure. The resonant component is coupled to the pad at least through the conductor structure.

[0013] Optionally, the pads are disposed on the surface of the second substrate structure closest to the first substrate structure, and on the outside of the bond. The area of ​​the second substrate structure is larger than the area of ​​the first substrate structure.

[0014] Optionally, the second substrate structure further includes a circuit structure disposed therein. The circuit structure includes a conductor structure and a plurality of conductive pillars coupled to the conductor structure, the conductive pillars extending to one side surface of the second substrate structure in the first direction. The resonant component is coupled to the conductor structure through a portion of the conductive pillars, and the pads are coupled to the conductor structure through another portion of the conductive pillars.

[0015] Optionally, the pressure sensor further includes: a second conductive bump disposed on the side of the second substrate structure near the first substrate structure; the second conductive bump is coupled to the resonant component. The second substrate structure includes: a second substrate, a first insulating layer, a conductive pattern layer, and a second insulating layer stacked along a direction close to the first substrate structure; a conductor structure is disposed on the conductive pattern layer. The pads and the second conductive bump respectively penetrate the second insulating layer and are respectively coupled to the conductor structure.

[0016] Optionally, the pressure sensor further includes: a first conductive bump and a second conductive bump. The first conductive bump is disposed on the side of the resonant component closer to the second substrate structure; the first conductive bump is coupled to the resonant component. The second conductive bump is disposed on the side of the second substrate structure closer to the first substrate structure; the second conductive bump is coupled to the first conductive bump. The resonant component and the conductor structure are coupled through the first conductive bump and the second conductive bump.

[0017] Optionally, the second conductive bump and the pad may be made of the same material.

[0018] Optionally, the resonant component includes: a driving electrode, a resonant structure, and a sensing electrode spaced apart. The driving electrode is used to input a driving signal to the resonant structure, and the sensing electrode is used to output a signal from the resonant structure. The pressure sensor includes: multiple conductor structures and multiple pads. The multiple conductor structures include: a first conductor structure coupled to the driving electrode, a second conductor structure coupled to the resonant structure, and a third conductor structure coupled to the sensing electrode. The multiple pads include: a first pad coupled to the first conductor structure, a second pad coupled to the second conductor structure, and a third pad coupled to the third conductor structure.

[0019] Optionally, the first substrate structure includes: a device layer, a third insulating layer, and a first substrate stacked along a direction away from the second substrate structure; a first groove is formed on the surface of the first substrate away from the third insulating layer, and a resonant component is disposed on the device layer and on one side of the first groove in a first direction. The second substrate structure includes: a second insulating layer and a second substrate stacked along a direction away from the first substrate structure; a second groove is formed on the surface of the second substrate away from the second insulating layer, and the second groove is at least partially opposite to the first groove.

[0020] Secondly, a pressure sensing device is provided. The pressure sensing device includes a pressure sensor provided by the above-described technical solution.

[0021] The beneficial effects that the pressure sensing device provided in some embodiments of this disclosure can achieve are the same as the beneficial effects that the pressure sensor provided in the above-described technical solution can achieve, and will not be repeated here. Attached Figure Description

[0022] The accompanying drawings, which are included to provide a further understanding of embodiments of this disclosure and form part of the embodiments of this disclosure, illustrate exemplary embodiments of this disclosure and are used to explain this disclosure, but do not constitute an undue limitation of this disclosure. In the drawings: Figure 1 A structural diagram of a pressure sensor provided for some embodiments of this disclosure; Figure 2A structural diagram of a pressure sensor provided for further embodiments of this disclosure; Figure 3 A structural diagram of a pressure sensor provided for further embodiments of this disclosure; Figure 4 A structural diagram of a first substrate structure provided for some embodiments of this disclosure; Figure 5 A structural diagram of a second substrate structure provided for some embodiments of this disclosure; Figure 6 A structural diagram of a second substrate structure provided for further embodiments of this disclosure; Figure 7 A structural diagram of a resonant component provided for some embodiments of this disclosure; Figure 8 A flowchart illustrating the fabrication process of a first substrate structure provided for some embodiments of this disclosure; Figure 9 A flowchart illustrating the fabrication process of a second substrate structure provided for some embodiments of this disclosure; Figure 10 A structural diagram of a pressure sensing device provided for some embodiments of this disclosure; Figure 11 This is a structural diagram of an electronic device provided for some embodiments of the present disclosure. Detailed Implementation

[0023] The technical solutions in some embodiments of this disclosure will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this disclosure, and not all embodiments. All other embodiments obtained by those skilled in the art based on the embodiments provided in this disclosure are within the scope of protection of this disclosure.

[0024] Unless the context otherwise requires, throughout the specification and claims, the term "comprising" is interpreted as open-ended and encompassing, meaning "including, but not limited to." In the description of the specification, terms such as "one embodiment," "some embodiments," "exemplary embodiment," "example," or "some examples" are intended to indicate that a particular feature, structure, material, or characteristic associated with that embodiment or example is included in at least one embodiment or example of this disclosure. The illustrative representations of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics mentioned may be included in any suitable manner in any one or more embodiments or examples.

[0025] In the description of embodiments of this disclosure, unless otherwise stated, "a plurality of" means two or more.

[0026] As used herein, “parallel,” “perpendicular,” and “equal” include the described situation and situations that are similar to the described situation, within an acceptable deviation range, which is determined by those skilled in the art taking into account the measurement under discussion and the errors associated with the measurement of a particular quantity (i.e., the limitations of the measurement system). For example, “parallel” includes absolute parallelism and approximate parallelism, where an acceptable deviation range for approximate parallelism may be, for example, within 5°; “perpendicular” includes absolute perpendicularity and approximate perpendicularity, where an acceptable deviation range for approximate perpendicularity may also be, for example, within 5°; “equal” includes absolute equality and approximate equality, where an acceptable deviation range for approximate equality may be, for example, a difference between the two equals being less than or equal to 5% of either one.

[0027] The terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Therefore, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of this application, unless otherwise stated, "a plurality of" means two or more.

[0028] In the description of the embodiments disclosed herein, it should be noted that, unless otherwise expressly specified and limited, the terms "installation," "connection," and "linking" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal communication between two components. Those skilled in the art can understand the specific meaning of the above terms in this application based on the specific circumstances.

[0029] It should be noted that, in the accompanying drawings of this disclosure, for example, 1 / 2 indicates structure / line 1, structure / line 2, which can be referenced to that line. Figure 3 In the diagram, 131 / 130 indicates that both first pad 131 and pad 130 can be represented by this structure. Examples of 11~1 appearing in the accompanying drawings of this disclosure indicate that component 11 belongs to component 1. For example, in the attached drawings… Figure 3 In the figure, 141~140 indicates that solder layer 141 belongs to bond body 140, and other similar reference numerals appearing in the figure also follow the above explanation.

[0030] As mentioned in the background, in some implementations, a groove is formed on the side of the second substrate structure near the first substrate structure to create a cavity space for the resonant structure to resonate. In this case, the process of forming a resonant pressure sensor includes the step of forming a groove on the surface of the second substrate structure near the first substrate structure, such as an etching step, or for example, the step of introducing a sacrificial layer. These steps increase the complexity of the process of forming a resonant pressure sensor.

[0031] Therefore, in order to reduce the complexity of the process for forming the pressure sensor 100, some embodiments of this disclosure provide a pressure sensor 100. For example... Figure 1 and Figure 2 As shown, the pressure sensor 100 includes a first substrate structure 110, a second substrate structure 120, and a bonding body 140. The first substrate structure 110 includes a resonant component 111. The second substrate structure 120 is disposed on one side of the first substrate structure 110 in a first direction X. The bonding body 140 is disposed between the first substrate structure 110 and the second substrate structure 120, and is connected to both the first substrate structure 110 and the second substrate structure 120. A cavity M is formed between the first substrate structure 110 and the second substrate structure 120, and the bonding body 140 surrounds the cavity M.

[0032] Here, the resonant component 111 can be used for pressure detection. For example, the resonant component 111 may include a resonant structure 1112 (see [reference]). Figure 4 The magnitude of external pressure is reflected by the change in the resonant frequency of the resonant structure 1112.

[0033] In some examples, the first substrate structure 110 includes a pressure-sensitive membrane disposed on one side of the resonant component 111. A cavity M is formed between the first substrate structure 110 and the second substrate structure 120. When the bonding body 140 surrounds the cavity M, the first substrate structure 110, the second substrate structure 120 and the bonding body 140 together enclose a space for forming the cavity M. The cavity M can provide deformation space for the pressure-sensitive membrane and simultaneously form a cavity space (hereinafter referred to as a resonant cavity) for the resonant structure to resonate.

[0034] Understandably, when a cavity M is formed between the first substrate structure 110 and the second substrate structure 120, and the bonding body 140 surrounds the cavity M, the first substrate structure 110, the second substrate structure 120, and the bonding body 140 can jointly form a resonant cavity. In this way, compared to some implementations where a groove is formed on the surface of the second substrate structure 120 near the first substrate structure 110 to form the resonant cavity, the step of forming a groove on the surface of the second substrate structure 120 near the first substrate structure 110 can be omitted during the formation of the pressure sensor 100. This simplifies the formation process of the cavity M, thereby reducing the complexity of the process for forming the pressure sensor 100 and consequently reducing the process cost.

[0035] Furthermore, if no groove is formed on the surface of the second substrate structure 120 near the first substrate structure 110, the structure of the second substrate structure 120 can be simplified, which is beneficial for the arrangement of other structures in the second substrate structure 120 and can further reduce the complexity of the process for forming the pressure sensor 100. For example, if no groove is formed on the surface of the second substrate structure 120 near the first substrate structure 110, a relatively simple lateral interconnect structure (e.g., conductor structure 121 described in detail below) coupled to the resonant component 111 can be provided on the second substrate structure 120 to replace the relatively complex vertical interconnect structure, which can further reduce the complexity of the process for forming the pressure sensor 100.

[0036] In some embodiments, such as Figure 1 and Figure 2 As shown, the second substrate structure 120 includes a first surface 1201 facing the first substrate structure 110. The first surface 1201 includes a contact portion 1201a that contacts the bonding body 140, and a middle portion 1201b surrounded by the contact portion 1201a; the middle portion 1201b is flush with the contact portion 1201a.

[0037] In some examples, the contact portion 1201a has a square annular surface, and the middle portion 1201b has a rectangular surface.

[0038] It should be noted that this disclosure describes the flush arrangement of the contact portion 1201a and the intermediate portion 1201b with reference to the cross-sectional views and / or plan views of the accompanying drawings, which are considered idealized exemplary drawings. However, it is conceivable that variations in the degree of flushness of the contact portion 1201a and the intermediate portion 1201b relative to the drawings may occur due to factors such as manufacturing techniques and / or tolerances. Therefore, the exemplary embodiments should not be construed as being limited to the situation shown in the accompanying drawings of this disclosure, but rather include deviations in the degree of flatness caused, for example, by manufacturing processes.

[0039] When the middle portion 1201b and the contact portion 1201a are flush, the middle portion and the edge portion of the first surface 1201 of the second substrate structure 120 are relatively flush, that is, the first surface 1201 of the second substrate structure 120 is relatively flat and no groove is formed. As mentioned above, firstly, it can simplify the formation process of the chamber M; secondly, it can simplify the structure of the second substrate structure 120, which is beneficial to the arrangement of other structures in the second substrate structure 120. Thus, it can reduce the complexity of the process of forming the pressure sensor 100.

[0040] In some embodiments, such as Figure 1 and Figure 2As shown, the second substrate structure 120 includes: a second substrate 122 and a second insulating layer 125 stacked along a direction close to the first substrate structure 110; the surface of the second insulating layer 125 away from the second substrate 122 forms a first surface 1201 of the second substrate structure 120.

[0041] For example, when the first surface 1201 of the second substrate structure 120 is formed on the surface of the second insulating layer 125 away from the second substrate 122, the morphology of the surface of the second insulating layer 125 away from the second substrate 122 can be observed to verify the case where the middle portion 1201b and the contact portion 1201a are flush.

[0042] For example, the material of the second insulating layer 125 may include at least one of SiO2, SiN and glass.

[0043] With the above configuration, the second insulating layer 125 can achieve electrical insulation function, so that the second substrate 122 and the structure located on one side of it are insulated from each other.

[0044] In some embodiments, such as Figure 1 and Figure 2 As shown, the resonant component 111 is exposed in the cavity M. A first distance D1 exists between the resonant component 111 and the relatively close surfaces of the second substrate structure 120. A first difference exists between the first distance D1 and the dimension D2 of the bond 140 along the first direction X; the absolute value of the first difference is less than or equal to 5% of the ratio of the first distance D1 to the absolute value of the first difference.

[0045] For example, the ratio of the absolute value of the first difference to the first distance D1 can be 0, 0.1%, 0.5%, 1%, 2%, 3%, 4%, or 5%, etc. Wherein, when the ratio of the absolute value of the first difference to the first distance D1 is 0, the first difference is 0, and the first distance D1 and the dimension D2 of the bonded body 140 along the first direction X are equal.

[0046] It should be understood that when the resonant component 111 is exposed to the cavity M, the first distance D1 is the dimension of the cavity M along the first direction X. When the ratio of the absolute value of the first difference to the first distance D1 is less than or equal to 5%, the first distance D1 and the dimension D2 of the bond 140 along the first direction X are equal or approximately equal, that is, the dimensions of the cavity M and the bond 140 along the first direction X are equal or approximately equal.

[0047] With the above configuration, the dimensions of the chamber M and the bonding body 140 along the first direction X are equal or approximately equal. Thus, the chamber M is formed during the formation of the bonding body 140 between the first substrate structure 110 and the second substrate structure 120. Therefore, compared to forming a groove on the surface of the second substrate structure 120 near the first substrate structure 110, the formation process of the chamber M is simplified, further reducing the complexity of the process for forming the pressure sensor 100.

[0048] In some examples, the aforementioned chamber M is a gauge pressure chamber that is connected to the external atmospheric environment.

[0049] In some cases, to meet the performance requirements of the pressure sensor 100, such as sensitivity, the aforementioned chamber M is a sealed chamber. For example, the resonant assembly 111 includes a resonant structure 1112 (see reference...). Figure 4 In the case of a resonant structure 1112, to minimize the damping of its vibration, the chamber M is designed as a sealed chamber (e.g., a vacuum chamber). In this case, the requirements for the process of forming the chamber M are relatively high.

[0050] In some embodiments, such as Figure 1 As shown, chamber M is a sealed chamber, and the bonding body 140 includes a solder layer 141, the thickness D3 of which ranges from 20μm to 100μm.

[0051] For example, the thickness D3 of the solder layer 141 can be 20μm, 30μm, 40μm, 44μm, 50μm, 60μm, 70μm, 80μm, 90μm or 100μm, etc.

[0052] For example, the material of solder layer 141 may include tin-based solder or indium-based solder, for example, the material of solder layer 141 may be SnAgCu (SAC).

[0053] In some examples, the resonant component 111 includes a resonant structure 1112 (see reference). Figure 4 At this point, the middle part of the cavity M can serve as the vacuum resonant cavity of the resonant structure 1112.

[0054] When the bonding body 140 includes a solder layer 141, a welding process (e.g., eutectic bonding) can be used to bond the first substrate structure 110 and the second substrate structure 120, enabling wafer-level packaging and improving the sealing effect of the sealed chamber. Furthermore, when the thickness of the solder layer 141 is in the range of 20μm to 100μm, the relatively thick D3 of the solder layer 141 results in a larger dimension D2 of the bonding body 140 along the first direction X. This allows the height of the solder layer 141 to automatically form a sealed chamber while meeting the spatial requirements of the chamber M. Thus, as described above, during the formation of the chamber M, it is possible to avoid forming grooves on the opposing surfaces of the first substrate structure 110 and the second substrate structure 120, further reducing the complexity of the process for forming the pressure sensor 100.

[0055] In some examples, solder layer 141 is in contact with first substrate structure 110 and / or second substrate structure 120.

[0056] In some cases, the material (e.g., silicon) of the portion of the first substrate structure 110 and / or the second substrate structure 120 near the bond 140 has relatively poor adhesion to the material of the solder layer 141.

[0057] In some embodiments, such as Figure 1 and Figure 2 As shown, the pressure sensor 100 further includes a bonding pad 130 disposed on the second substrate structure 120. The bonding body 140 further includes a first connection pattern 142 and a second connection pattern 143. The first connection pattern 142 is disposed between the first substrate structure 110 and the solder layer 141. The second connection pattern 143 is disposed between the second substrate structure 120 and the solder layer 141. The second connection pattern 143 and the bonding pad 130 are made of the same material.

[0058] This disclosure does not limit the material, shape, size, or position of the first connecting pattern 142. Exemplarily, the material of the first connecting pattern 142 may include at least one of CrAu, CrNiAu, and TiPtAu. Exemplarily, the shape of the first connecting pattern 142 may be a square annulus or a circular annulus. Exemplarily, the width of the first connecting pattern 142 is greater than or equal to 600 μm, for example, 600 μm, 650 μm, 700 μm, 750 μm, or 900 μm. Exemplarily, along a direction perpendicular to the first direction X, the distance between the outer edge of the first connecting pattern 142 and the edge of the first substrate structure 110 is greater than or equal to 50 μm, for example, 50 μm, 60 μm, 70 μm, 80 μm, or 90 μm. For example, along a direction perpendicular to the first direction X, the distance between the inner edge of the first connection pattern 142 and the pressure-sensitive membrane is greater than or equal to 50 μm, such as 50 μm, 60 μm, 70 μm, 80 μm or 90 μm.

[0059] This disclosure does not limit the material, shape, size, or position of the second connection pattern 143. Exemplarily, the material of the second connection pattern 143 may include at least one of CrAu, CrNiAu, and TiPtAu. Exemplarily, the shape of the second connection pattern 143 may be a square annulus or a circular annulus. Exemplarily, the width of the second connection pattern 143 is greater than or equal to 600 μm, for example, 600 μm, 650 μm, 700 μm, 750 μm, or 900 μm. Exemplarily, along a direction perpendicular to the first direction X, the distance between the outer edge of the first connection pattern 142 and the edge of the second substrate structure 120 is greater than or equal to 50 μm, for example, 50 μm, 60 μm, 70 μm, 80 μm, or 90 μm. For example, along a direction perpendicular to the first direction X, the distance between the inner edge of the second connection pattern 143 and the pressure-sensitive membrane is greater than or equal to 50 μm, such as 50 μm, 60 μm, 70 μm, 80 μm or 90 μm.

[0060] For example, the shape of the first connection pattern 142 and the shape of the second connection pattern 143 can both be the same as the shape of the solder layer 141.

[0061] Understandably, by including the first connection pattern 142 in the bonding body 140, the solder layer 141 and the first substrate structure 110 can be connected through the first connection pattern 142. In this way, compared with the case where the solder layer 141 and the first substrate structure 110 are in direct contact, the connection effect between the solder layer 141 and the first substrate structure 110 can be increased, which is beneficial to improving the structural reliability of the pressure sensor 100 and improving the sealing effect of the sealed chamber.

[0062] Furthermore, when the bonding body 140 includes a first connection pattern 142, the shape of the solder layer 141 can be defined using the first connection pattern 142. For example, a ball-planting process can be used to fabricate the solder layer 141 on the first connection pattern 142 with the defined pattern, so that the solder layer 141 is annular. This improves the feasibility of bonding the first substrate structure 110 and the second substrate structure 120 using a welding process (e.g., eutectic bonding process) and allows the spatial dimensions of the cavity M to be within a set range.

[0063] Here, the beneficial effects that the pressure sensor 100 can achieve by including the second connection pattern 143 are similar to the beneficial effects that the pressure sensor 100 can achieve by including the first connection pattern 142, and will not be repeated here.

[0064] In some examples, the resonant component 111 on the first substrate structure 110 is connected to an external control structure through a through contact that penetrates the second substrate structure 120.

[0065] In some cases, the process of forming the aforementioned through-contact can affect other processes in the fabrication of the pressure sensor 100, increasing the complexity of the process for forming the pressure sensor 100. For example, in some implementations, in addition to forming the through-contact, a second groove Q2 is also formed on the surface of the second substrate structure 120 on the side away from the first substrate structure 110 (see reference). Figure 1 Since the process of forming the through contact and the second groove Q2 both involve etching processes, but the depths of the through contact and the second groove Q2 are not the same, multiple etching processes will be required on the second substrate structure 120, which increases the complexity of the process of forming the pressure sensor 100.

[0066] In some embodiments, such as Figure 1 and Figure 2 As shown, the second substrate structure 120 includes a conductor structure 121 extending along a second direction Y, which intersects with a first direction X. The pressure sensor 100 also includes a pad 130 disposed on the second substrate structure 120. The resonant component 111 is coupled to the pad 130 at least through the conductor structure 121.

[0067] For example, pad 130 can be configured to be coupled to an external control structure to enable signal communication between the external control structure and pressure sensor 100. Here, the external control structure is, for example, a printed circuit board (PCB), or, for example, the control circuit 210 described in detail below (see reference). Figure 10 ).

[0068] This disclosure does not limit the material, shape, or size of the pad 130. Exemplarily, the material of the pad 130 may include at least one of CrAu, CrNiAu, and TiPtAu. Exemplarily, the shape of the pad 130 may include at least one of a square, rectangle, circle, and ellipse. Exemplarily, the maximum size of the pad 130 may range from 50μm to 150μm, for example, 50μm, 70μm, 90μm, 110μm, 115μm, 130μm, or 150μm. The maximum size of the pad 130 may be, for example, the side length of a square pad 130, or, for example, the diameter of a circular pad 130.

[0069] Here, the resonant component 111 is coupled to the pad 130 at least through the conductor structure 121. This means that the structure used to realize signal transmission between the resonant component 111 and the pad 130 (hereinafter referred to as the signal transmission channel) includes the conductor structure 121, and may also include other structures. Moreover, this disclosure does not limit the location, arrangement, etc. of other structures besides the conductor structure 121.

[0070] Understandably, on the one hand, when the resonant component 111 is coupled to the pad 130 at least through the conductor structure 121 and the conductor structure 121 extends along the second direction Y, the above-mentioned signal transmission channel may not include a through structure penetrating the second substrate structure 120. In this way, through structures such as through contacts can be avoided on the second substrate structure 120. Thus, compared with the case where the resonant component 111 and the pad 130 are interconnected through through contacts, firstly, the process complexity of the pressure sensor 100 can be reduced, and secondly, the impact of the process of forming the signal transmission channel on other processes on the second substrate structure 120 can be reduced, further reducing the process complexity of forming the pressure sensor 100.

[0071] On the other hand, since a groove is formed on the side of the second substrate structure 120 near the first substrate structure 110, it is difficult to arrange the conductor structure 121 on the second substrate structure 120. However, if no groove is formed on the side of the second substrate structure 120 near the first substrate structure 110, the structure of the second substrate structure 120 is simplified, making it easier to arrange the conductor structure 121 on the second substrate structure 120. Therefore, through the above arrangement, the simplified structure of the second substrate structure 120 in this embodiment can be fully utilized to further reduce the complexity of the process for forming the pressure sensor 100.

[0072] The location of the pads 130 in this embodiment is not limited. As long as they are located on the second substrate structure 120 and can be connected to an external control structure, they are acceptable.

[0073] In some examples, the pad 130 is disposed on the surface of the second substrate structure 120 away from the first substrate structure 110. In this case, the external control structure can be coupled to the pad 130 from the side of the second substrate structure 120 away from the first substrate structure 110 to achieve coupling with the resonant component 111.

[0074] In some embodiments, such as Figure 1 , Figure 2 and Figure 3 As shown, the pad 130 is disposed on the side surface of the second substrate structure 120 near the first substrate structure 110, and on the outside of the bonding body 140.

[0075] For example, such as Figure 3 and Figure 5 As shown, the pressure sensor 100 includes ten pads 130, which are arranged along the circumference of the bond body 140 on the outer side of the bond body 140.

[0076] With the above arrangement, the pad 130 can be placed closer to the resonant component 111, which can reduce the interconnection distance between the resonant component 111 and the pad 130 to a certain extent, thereby improving data transmission efficiency. Furthermore, by placing the pad 130 on the outside of the bonding body 140, the pad 130 can be connected to the external control structure on the outside of the bonding body 140. This reduces the impact of the connection structure between the pad 130 and the external control structure on the pressure sensor 100. For example, it reduces the impact of the wire bonding structure between the pad 130 and the external control structure on the airtightness of the sealed chamber, which is beneficial to improving the structural reliability of the pressure sensor 100.

[0077] In some examples, the area of ​​the second substrate structure 120 is less than or equal to the area of ​​the first substrate structure 110. In this case, in order to place the pad 130 on the outside of the bond body 140, the bond body 140 will be smaller, resulting in a smaller area of ​​the chamber M, which may affect the deformation of the pressure-sensitive membrane, or may make the bond body 140 thicker.

[0078] In some embodiments, such as Figure 1 and Figure 2 As shown, the area of ​​the second substrate structure 120 is larger than the area of ​​the first substrate structure 110.

[0079] Here, the area of ​​the first substrate structure 110 refers to the area of ​​the cross-section of the first substrate structure 110 perpendicular to the first direction X. Similarly, the area of ​​the second substrate structure 120 refers to the area of ​​the cross-section of the second substrate structure 120 perpendicular to the first direction X.

[0080] With this configuration, the pad 130 can be positioned on the surface of the second substrate structure 120, extending beyond the first substrate structure 110; that is, the pad 130 is positioned on the outer side of the first substrate structure 110. Compared to cases where the area of ​​the second substrate structure 120 is smaller than or equal to the area of ​​the first substrate structure 110, this configuration offers two advantages: firstly, it facilitates the connection of the pad 130 to the external control structure; secondly, it allows for a larger bond body 140, enabling a thinner bond body 140 while maintaining the volume of the chamber M, thus reducing the size of the pressure sensor 100.

[0081] In some examples, conductor structure 121 is an interconnect structure. In this case, conductor structure 121 is configured to realize signal transmission between resonant component 111 and pad 130, but does not process the signal. In other examples, conductor structure 121 can be part of a circuit structure. In this case, conductor structure 121 can be configured to realize signal transmission between resonant component 111 and pad 130, and perform some signal processing. Examples of both cases will be given below.

[0082] In some embodiments, such as Figure 2 As shown, the pressure sensor 100 further includes a second conductive bump 152 disposed on the side of the second substrate structure 120 near the first substrate structure 110; the second conductive bump 152 is coupled to the resonant component 111. The second substrate structure 120 includes a second substrate 122, a first insulating layer 123, a conductive pattern layer 124, and a second insulating layer 125 stacked along a direction close to the first substrate structure 110; a conductor structure 121 is disposed on the conductive pattern layer 124. The pad 130 and the second conductive bump 152 respectively penetrate the second insulating layer 125 and are respectively coupled to the conductor structure 121.

[0083] This disclosure does not limit the material, shape, size, etc. of the second conductive bump 152. Exemplarily, the material of the second conductive bump 152 may include at least one of CrAu, CrNiAu, and TiPtAu. Exemplarily, the shape of the second conductive bump 152 may be square, rectangular, circular, or elliptical. Exemplarily, the side length or diameter of the second conductive bump 152 may range from 50μm to 100μm, for example, 50μm, 60μm, 70μm, 80μm, or 100μm.

[0084] It should be understood that when the second substrate structure 120 includes a second substrate 122, a first insulating layer 123, a conductive pattern layer 124, and a second insulating layer 125 stacked in a direction close to the first substrate structure 110, the first insulating layer 123 can be used to achieve an insulating connection between the conductive pattern layer 124 and the second substrate 122.

[0085] In some examples, the conductive pattern layer 124 includes a plurality of conductor structures 121, and the conductive pattern layer 124 also includes a dielectric material or insulating material disposed between the conductor structures 121.

[0086] Understandably, when the pad 130 and the second conductive bump 152 respectively penetrate the second insulating layer 125 and are respectively coupled to the conductor structure 121, the resonant component 111 can be coupled to the pad 130 at least by sequentially connecting the second conductive bump 152 and the conductor structure 121. Moreover, when the conductor structure 121 is disposed on the conductive pattern layer 124, the conductor structure 121 is disposed on the outside of the first insulating layer 123 and the second substrate 122. In this way, openings or slots in the first insulating layer 123 and the second substrate 122 can be avoided. Thus, as described above, firstly, the manufacturing complexity of the pressure sensor 100 can be reduced, and secondly, the impact of the process of forming the signal transmission channel on other processes on the second substrate structure 120 can be reduced, further reducing the manufacturing complexity of the pressure sensor 100.

[0087] In some embodiments, such as Figure 3 and Figure 6 As shown, the second substrate structure 120 further includes a circuit structure 126 disposed therein. The circuit structure 126 includes a conductor structure 121 and a plurality of conductive pillars (not shown) coupled to the conductor structure 121, the conductive pillars extending to one side surface of the second substrate structure 120 in the first direction X. The resonant component 111 is coupled to the conductor structure 121 through a portion of the conductive pillars, and the pad 130 is coupled to the conductor structure 121 through another portion of the conductive pillars.

[0088] In some examples, such as Figure 3 As shown, the pad 130 is disposed on the side of the second substrate structure 120 near the first substrate structure 110. At this time, the pad 130 is coupled to the conductor structure 121 through the conductive post extending to the surface of the second substrate structure 120 near the first substrate structure 110.

[0089] In some examples, the pad 130 is located on the side of the second substrate structure 120 away from the first substrate structure 110. In this case, the pad 130 is coupled to the conductor structure 121 through a conductive post extending to the surface of the second substrate structure 120 away from the first substrate structure 110.

[0090] For example, circuit structure 126 can be configured to receive a drive signal from an external control structure and transmit the drive signal to resonant component 111 (e.g., to drive electrode 1111, see reference 1111). Figure 4It can also be configured to: receive a reference voltage signal from an external control structure and transmit the reference voltage signal to the resonant component 111 (e.g., to the resonant structure 1112); it can also be configured to: receive a detection signal generated by the resonant component 111 (e.g., receive a detection signal on the sensing electrode 1113), and amplify and transmit the detection signal to the external control structure.

[0091] In some examples, the second substrate structure 120 includes a second substrate 122, and the circuit structure 126 is integrally integrated within the second substrate 122. In other words, the second substrate 122 with the circuit structure 126 can be produced using a relatively mature process, so that the circuit structure 126 (including conductive pillars) integrated within the second substrate 122 is obtained during the process of obtaining the second substrate 122.

[0092] With the above configuration, on the one hand, by utilizing the circuit structure 126, the coupling between the resonant component 111 and the pad 130 can be achieved, and it is possible to avoid opening holes or slots on the second substrate structure 120. Thus, as mentioned in the previous part, firstly, the process complexity of the pressure sensor 100 can be reduced, and secondly, the impact of the process of forming the signal transmission channel on other processes on the second substrate structure 120 can be reduced, thereby further reducing the process complexity of forming the pressure sensor 100.

[0093] On the other hand, by utilizing circuit structure 126, the signal transmitted to resonant component 111 and / or the signal generated by resonant component 111 can be processed, enabling signal processing within the pressure sensor 100. This eliminates the need for an external processing structure, improving the integration of the pressure sensor 100 and enhancing the pressure sensing device 200 (see reference 126). Figure 10 It has a smaller volume.

[0094] The embodiments disclosed herein do not impose limitations on the form and location of the interconnection structure between the resonant component 111 and the conductor structure 121.

[0095] In some embodiments, such as Figure 1 and Figure 2 As shown, the pressure sensor 100 further includes a first conductive bump 151 and a second conductive bump 152. The first conductive bump 151 is disposed on the side of the resonant component 111 near the second substrate structure 120; the first conductive bump 151 is coupled to the resonant component 111. The second conductive bump 152 is disposed on the side of the second substrate structure 120 near the first substrate structure 110; the second conductive bump 152 is coupled to the first conductive bump 151. The resonant component 111 and the conductor structure 121 are coupled through the first conductive bump 151 and the second conductive bump 152.

[0096] In some examples, the first conductive bump 151 and the second conductive bump 152 are in electrical contact. In some examples, such as Figure 1 and Figure 2 As shown, the first conductive bump 151 and the second conductive bump 152 are bonded together via a solder portion 153. Exemplarily, the solder portion 153, the first conductive bump 151, and the second conductive bump 152 can have the same shape. Exemplarily, the solder portion 153 and the solder layer 141 are made of the same material, for example, SnAgCu. Exemplarily, the solder portion 153 and the solder layer 141 have the same thickness. This configuration improves the connection reliability between the first conductive bump 151 and the second conductive bump 152, and also improves the bonding strength between the first connection pattern 142 and the solder layer 141.

[0097] For example, such as Figure 4 As shown, the resonant component 111 includes: a driving electrode 1111, a resonant structure 1112, and a sensing electrode 1113 spaced apart. The driving electrode 1111 is used to input a driving signal to the resonant structure 1112, and the sensing electrode 1113 is used to output the signal from the resonant structure 1112. Figure 3 and Figure 7 As shown, the pressure sensor 100 includes a plurality of first conductive bumps 151 and a plurality of second conductive bumps 152. The plurality of first conductive bumps 151 include a first bump 1511 coupled to a drive electrode 1111, a second bump 1512 coupled to a resonant structure 1112, and a third bump 1513 coupled to a sensing electrode 1113. The plurality of second conductive bumps 152 include a fourth bump 1521 coupled to the first bumps 1511, a fifth bump 1522 coupled to the second bumps 1512, and a sixth bump 1523 coupled to the third bump 1513.

[0098] With this configuration, the first bump 1511 and the fourth bump 1521 can be configured to receive a drive signal to the drive electrode 1111, the second bump 1512 and the fifth bump 1522 can be configured to receive a reference voltage signal (e.g., a ground signal) to the resonant structure 1112, and the third bump 1513 and the sixth bump 1523 can be configured to output the signal sensed by the sensing electrode 1113.

[0099] In some examples, such as Figure 1 As shown, the first substrate structure 110 includes: a device layer 114, a third insulating layer 113 and a first substrate 112 stacked in a direction away from the second substrate structure 120; a resonant component 111 is disposed on the device layer 114, and a first conductive bump 151 may be disposed on the side of the device layer 114 away from the third insulating layer 113.

[0100] In some examples, such as Figure 1As shown, the second substrate structure 120 includes: a second insulating layer 125 and a second substrate 122 stacked in a direction away from the first substrate structure 110; the second conductive bump 152 may be disposed on the side of the second insulating layer 125 away from the second substrate 122.

[0101] This disclosure does not limit the material, shape, size, etc. of the first conductive bump 151. Exemplarily, the material of the first conductive bump 151 may include at least one of CrAu, CrNiAu, and TiPtAu. Exemplarily, the shape of the first conductive bump 151 may be square, rectangular, circular, or elliptical. Exemplarily, the side length or diameter of the first conductive bump 151 may range from 50μm to 100μm, for example, 50μm, 60μm, 70μm, 80μm, or 100μm. Regarding the understanding of the material, shape, and size of the second conductive bump 152, please refer to the foregoing description of the second conductive bump 152; it will not be repeated here.

[0102] When the bonding body 140 includes the first connection pattern 142, the first connection pattern 142 and the first conductive bump 151 can be formed in the same step and have approximately the same height. This can further simplify the process of forming the pressure sensor 100, improve the connection reliability between the first conductive bump 151 and the second conductive bump 152, and improve the bonding strength between the first connection pattern 142 and the solder layer 141.

[0103] This disclosure does not limit the coupling method between the second conductive bump 152 and the conductor structure 121. For example, as Figure 2 As shown, in the case where the second substrate structure 120 includes a second substrate 122, a first insulating layer 123, a conductive pattern layer 124, and a second insulating layer 125 stacked along a direction close to the first substrate structure 110, and the conductor structure 121 is disposed on the conductive pattern layer 124, the second conductive bump 152 can penetrate the second insulating layer 125 and make electrical contact with the conductor structure 121. For example, as... Figure 5 As shown, when the second substrate structure 120 includes a circuit structure 126, and the circuit structure 126 includes a conductor structure 121 and a conductor post, the second conductive bump 152 can make electrical contact with the conductor post, thereby achieving coupling with the conductor structure 121.

[0104] Understandably, when the resonant component 111 and the conductor structure 121 are coupled through the first conductive bump 151 and the second conductive bump 152, the first conductive bump 151 and the second conductive bump 152 can form a vertical interconnection structure between the resonant component 111 and the conductor structure 121. This can shorten the interconnection distance between the resonant component 111 and the conductor structure 121, which is beneficial to improving data transmission efficiency and reducing the size of the pressure sensor 100. Secondly, the high bonding strength of the first conductive bump 151 and the second conductive bump 152 can be utilized to improve the interconnection reliability between the resonant component 111 and the conductor structure 121.

[0105] As described above, this disclosure does not limit the material type of the second conductive bump 152 and the pad 130. In some examples, the materials of the second conductive bump 152 and the pad 130 are different. In this case, different steps can be used to form the second conductive bump 152 and the pad 130 respectively.

[0106] In some embodiments, such as Figure 1 and Figure 2 As shown, the second conductive bump 152 and the pad 130 are made of the same material.

[0107] For example, both the second conductive bump 152 and the pad 130 include at least one of CrAu, CrNiAu, and TiPtAu. For instance, both the second conductive bump 152 and the pad 130 include CrAu.

[0108] For example, when the bonding body 140 includes a second connection pattern 143, the second conductive bump 152, the second connection pattern 143, and the pad 130 are made of the same material. For example, the second conductive bump 152, the second connection pattern 143, and the pad 130 are all made of CrNiAu.

[0109] By setting it up in this way, the same steps can be used to form the second conductive bump 152 and the pad 130, thus simplifying the process of forming the second conductive bump 152 and the pad 130 and further reducing the complexity of the process of forming the pressure sensor 100.

[0110] The following, such as Figure 4 As shown, taking the resonant component 111 including the resonant structure 1112 as an example, the coupling method of the resonant component 111, the conductor structure 121 and the pad 130 will be explained.

[0111] In some embodiments, such as Figure 4 and Figure 5As shown, the resonant component 111 includes: a driving electrode 1111, a resonant structure 1112, and a sensing electrode 1113 spaced apart. The driving electrode 1111 is used to input a driving signal to the resonant structure 1112, and the sensing electrode 1113 is used to output the signal from the resonant structure 1112. The pressure sensor 100 includes: a plurality of conductor structures 121 and a plurality of pads 130. The plurality of conductor structures 121 includes: a first conductor structure 1211 coupled to the driving electrode 1111, a second conductor structure 1212 coupled to the resonant structure 1112, and a third conductor structure 1213 coupled to the sensing electrode 1113. The plurality of pads 130 includes: a first pad 131 coupled to the first conductor structure, a second pad 132 coupled to the second conductor structure, and a third pad 133 coupled to the third conductor structure.

[0112] For example, the first conductor structure 1211 and the first pad 131 can be configured to provide a drive signal (e.g., an AC drive signal) to the drive electrode 1111; the second conductor structure 1212 and the second pad 132 can be configured to provide a reference voltage signal (e.g., ground) to the resonant structure 1112; and the third conductor structure 1213 and the third pad 133 can be configured to output the signal sensed by the sensing electrode 1113.

[0113] Based on the above structure, the working principle of the pressure sensor 100 can be as follows: a resonant structure 1112 is disposed on the pressure-sensitive membrane. Under external pressure, the pressure-sensitive membrane deforms, generating stress. This stress is transmitted to the resonant structure 1112, causing a change in its stiffness, which in turn changes its resonant frequency. Therefore, the magnitude of the external pressure can be reflected by the change in the resonant frequency.

[0114] In some examples, a driving electrode 1111, a resonant structure 1112, and a sensing electrode 1113 form a resonant module. The pressure sensor 100 includes two resonant modules: one located at the edge of the pressure-sensitive membrane and the other at the center. The signals output by the two resonant modules can constitute a differential signal. This configuration reduces common-mode interference and improves frequency stability.

[0115] In some examples, such as Figure 7As shown, the resonant structure 1112 includes an integrally formed driving part 101, two resonant beams 102, a sensing part 103, and a coupling beam 104. The two resonant beams 102 are connected by the coupling beam 104. The driving electrode 1111 is disposed opposite to the driving part 101, and the sensing electrode 1113 is disposed opposite to the sensing part 103. The resonant beams 102 are connected to the third insulating layer 113 through anchor points at both ends. The driving electrode 1111 and the sensing electrode 1113 are connected to the third insulating layer 113. With this arrangement, a periodic electrostatic force can be formed between the driving electrode 1111 and the driving part 101 to drive the resonant structure 1112 to vibrate. This causes the gap between the sensing part 103 and the sensing electrode 1113 of the resonant structure 1112 to change periodically, thereby causing the charge on the sensing electrode 1113 to change periodically, thus generating an alternating current signal on the sensing electrode 1113. By detecting the frequency of the alternating current signal, pressure can be detected.

[0116] In some examples, a dynamic balance resonance can be formed between two resonant beams 102 connected by the coupling beam 104. During operation, the in-plane dynamic balance center of mass does not vibrate with the resonant beam 102. In this way, losses can be reduced, the quality factor (Q value) can be improved, and the resonant structure 1112 can have only one stable vibration mode and resonant frequency throughout the entire operation. This can reduce the influence of the driving force and / or the asymmetry of the resonant structure 1112 on the resonant frequency.

[0117] Exemplarily, the driving electrode 1111 may include a first comb portion, and the driving part 101 may include a second comb portion, the first comb portion and the second comb portion being complementary. Exemplarily, the sensing electrode 1113 may include a third comb portion, and the sensing part 103 may include a fourth comb portion, the third comb portion and the fourth comb portion being complementary.

[0118] For example, when the resonant structure 1112 is connected to the third insulating layer 113 via an anchor point, the first conductive bump 151 connected to the resonant structure 1112 can be coupled to the anchor point.

[0119] With the arrangement of the resonant component 111 including the driving electrode 1111, the resonant structure 1112 and the sensing electrode 1113, the pressure sensor 100 is a resonant MEMS pressure sensor. The resonant MEMS pressure sensor has the advantages of high measurement accuracy and good performance, and has been widely used.

[0120] In some examples, a first groove Q1 is formed on the side of the first substrate structure 110 away from the second substrate structure 120, and a pressure-sensitive membrane is formed on one side of the first groove Q1. No groove is formed on the side of the second substrate structure 120 away from the first substrate structure 110. In this case, the pressure sensor 100 can be an absolute pressure sensor 100, used to detect the pressure acting on the pressure-sensitive membrane.

[0121] In some embodiments, such as Figure 1 and Figure 2 As shown, the first substrate structure 110 includes a device layer 114, a third insulating layer 113, and a first substrate 112 stacked along a direction away from the second substrate structure 120; a first groove Q1 is formed on the surface of the first substrate 112 away from the third insulating layer 113, and a resonant component 111 is disposed on the device layer 114 and on one side of the first groove Q1 in the first direction X. The second substrate structure 120 includes a second insulating layer 125 and a second substrate 122 stacked along a direction away from the first substrate structure 110; a second groove Q2 is formed on the surface of the second substrate 122 away from the second insulating layer 125, and the second groove Q2 is at least partially opposite to the first groove Q1.

[0122] In some examples, the first substrate structure 110 includes an SOI substrate, which can improve the integration of the device layer 114, the third insulating layer 113, and the first substrate 112.

[0123] For example, when the pressure sensor 100 includes a first conductive bump 151 and the bonding body 140 includes a first connection pattern 142, the first connection pattern 142 and the first conductive bump 151 may be disposed on the surface of the device layer 114 away from the third insulating layer 113, and the first connection pattern 142 surrounds the resonant component 111 disposed in the device layer 114.

[0124] For example, when the bonding body 140 includes a second connection pattern 143, the second connection pattern 143 may be disposed on the surface of the second insulating layer 125 away from the second substrate 122. For example, when the pressure sensor 100 includes a second conductive bump 152, the second conductive bump 152 and the pad 130 may penetrate the second insulating layer 125 and be coupled to the conductor post or conductor structure 121.

[0125] It should be understood that in the first substrate structure 110, a pressure-sensitive membrane is formed on one side of the first groove Q1. In the second substrate structure 120, another pressure-sensitive membrane is formed on one side of the second groove Q2. Thus, the pressure sensor 100 can be a differential pressure sensor, which can be used to detect the pressure difference between the two pressure-sensitive membranes under the applied force.

[0126] With the above settings, on the one hand, the pressure sensor 100 can be a differential pressure sensor, which has the advantages of being able to directly measure pressure difference, offset common mode pressure, high detection accuracy, high frequency stability and high resolution, and can be applied to scenarios such as liquid level measurement and pressure measurement of sealed containers.

[0127] On the other hand, as described above, if a through-contact or other through-structure is also formed on the second substrate structure 120 when a second groove Q2 is formed on the second substrate structure 120, the process of forming both the through-contact and the second groove Q2 involves etching processes. However, the depths of the through-contact and the second groove Q2 are inconsistent, which would lead to multiple etching processes on the second substrate structure 120, further increasing the complexity of the pressure sensor 100 process. Therefore, by configuring the resonant component 111 to be coupled to the pad 130 at least through the conductor structure 121, compared to the case where the resonant component 111 is coupled to the pad 130 through a through-structure, the process of forming the signal transmission channel (i.e., the structure used to realize signal transmission between the resonant component 111 and the pad 130) can be reduced, thus reducing the impact on the process of forming the second groove Q2 and further reducing the complexity of the pressure sensor 100 process.

[0128] The following describes the fabrication method of pressure sensor 100 by taking pressure sensor 100 as a differential pressure type pressure sensor as an example.

[0129] In some embodiments, the method for manufacturing the pressure sensor 100 includes steps S1 to S3.

[0130] S1: Forming a first substrate structure 110. The first substrate structure 110 includes a resonant component 111.

[0131] S2: Forming a second substrate structure 120 and pads 130. The second substrate structure 120 includes a conductor structure 121 extending along a second direction Y. Pads 130 are disposed on the second substrate structure 120.

[0132] S3: The first substrate structure 110 and the second substrate structure 120 are connected by a bonding body 140, such that the second substrate structure 120 is disposed on one side of the first substrate structure 110 in the first direction X, the second direction Y intersects the first direction X, and a cavity M is formed between the first substrate structure 110 and the second substrate structure 120, with the bonding body 140 surrounding the cavity M. The resonant component 111 is coupled to the pad 130 at least through the conductor structure 121.

[0133] In some examples, such as Figure 8 As shown, a first substrate structure 110 (i.e., S1) is formed, including S1.1 to S1.4.

[0134] S1.1: A first conductive bump 151 and a first connection pattern 142 are formed on the SOI substrate. The SOI substrate includes a first substrate 112, a third insulating layer 113, and a device layer 114 stacked together.

[0135] For example, the process of forming the first conductive bump 151 and the first connection pattern 142 can be a sputtering process or an evaporation process.

[0136] S1.2: Etch the surface of the first substrate 112 away from the third insulating layer 113 to form a first groove Q1, and form a pressure-sensitive film on the first substrate 112 disposed on one side of the first groove Q1.

[0137] For example, a dry etching process or a wet etching process can be used to form the first groove Q1.

[0138] Here, the shape of the first groove Q1 is not limited. For example, the first groove Q1 can be a rectangular groove.

[0139] S1.3: Etch device layer 114 to form resonant component 111. Resonant component 111 includes resonant structure 1112 (see reference). Figure 4 ).

[0140] S1.4: The resonant structure 1112 will be used as a reference. Figure 7 The third insulating layer 113 on one side is removed, while the third insulating layer 113 on the driving electrode 1111, the sensing electrode 1113 and the anchor point side is retained.

[0141] For example, the third insulating layer 113 disposed on one side of the resonant structure 1112 is removed by an acid etching process (e.g., hydrofluoric acid (HF) etching).

[0142] In some examples, such as Figure 9 As shown, a second substrate structure 120 and pads 130 (i.e., S2) are formed, including S2.1 to S2.4.

[0143] S2.1: Deposit insulating material on the second substrate 122 to form a second insulating layer 125.

[0144] S2.2: Combination Figure 1 The second insulating layer 125 located on one side of the second conductive bump 152 and the pad 130 to be formed is removed by etching.

[0145] S2.3: Form a second conductive bump 152, a pad 130, and a second connection pattern 143.

[0146] For example, the process of forming the second conductive bump 152, the pad 130, and the second connection pattern 143 can be a sputtering process or an evaporation process.

[0147] S2.4: Etch the surface of the second substrate 122 away from the second insulating layer 125 to form a second groove Q2, and form a pressure-sensitive film on the second substrate 122 disposed on one side of the second groove Q2.

[0148] For example, a dry etching process or a wet etching process can be used to form the second groove Q2.

[0149] Here, the shape of the second groove Q2 is not limited. For example, the second groove Q2 can be a rectangular groove.

[0150] In some examples, the first substrate structure 110 and the second substrate structure 120 are connected by a bonding body 140 (i.e., S3), including S3.1 to S3.2.

[0151] S3.1: As Figure 9 As shown, a eutectic solder K is provided on the side of the second connection pattern 143 and the second conductive bump 152 away from the second substrate 122.

[0152] For example, a ball-mounting process is used to provide eutectic solder K on the side of the second connection pattern 143 and the second conductive bump 152 away from the second substrate 122.

[0153] S3.2: Combination Figure 1 The first substrate structure 110 is bonded to one side of the second substrate structure 120 in the first direction X to form a solder layer 141 between the first connection pattern 142 and the second connection pattern 143, and a solder portion 153 between the first conductive bump 151 and the second conductive bump 152.

[0154] Understandably, the above method can be used to form a flip-chip integrated differential pressure capacitive resonant pressure sensor (e.g., a differential pressure resonant pressure sensor). The above fabrication method is simple and can avoid forming through-hole structures such as through-hole contacts on the second substrate structure 120, thereby reducing the complexity of the pressure sensor 100 process.

[0155] It should be noted that the above-listed preparation methods are examples of the preparation methods for the pressure sensor 100, and are not limitations on the preparation methods for the pressure sensor 100.

[0156] like Figure 10 As shown, some embodiments of this disclosure also provide a pressure sensing device 200. The pressure sensing device 200 includes a pressure sensor 100 provided in the above-described technical solution.

[0157] In some examples, the pressure sensing device 200 also includes: a control circuit 210; the control circuit 210 and the pad 130 (see reference) Figure 1) coupling.

[0158] In some examples, such as Figure 3 As shown, the pressure sensor 100 includes a circuit structure 126. At this time, the control circuit 210 is coupled to the circuit structure 126 through the pad 130, and then coupled to the resonant component 111.

[0159] In some other examples, such as Figure 2 As shown, the pressure sensor 100 includes a conductive pattern layer 124 and a conductor structure 121 disposed on the conductive pattern layer 124. At this time, the control circuit 210 is coupled to the conductor structure 121 through the pad 130, and then coupled to the resonant component 111.

[0160] The beneficial effects that the pressure sensing device 200 provided in some embodiments of this disclosure can achieve are the same as the beneficial effects that the pressure sensor 100 provided in the above technical solution can achieve, and will not be repeated here.

[0161] In addition, when the control circuit 210 is coupled to the pad 130, the control circuit 210 can input a drive signal (e.g., a voltage signal) to the resonant component 111, and can output the signal detected by the resonant component 111 to the control circuit 210. In this way, the control and sensing of the resonant component 111 can be realized.

[0162] In some examples, the control circuit 210 is mounted on a circuit board, and the pad 130 is connected to the circuit board via a wire bonding (WB) structure, thereby coupling the pressure sensor 100 with the control circuit 210.

[0163] like Figure 11 As shown, some embodiments of this disclosure also provide an electronic device 300. The electronic device includes a housing 310 and a pressure sensing device 200 provided by the above-described technical solution disposed on the housing 310.

[0164] The beneficial effects that the electronic device 300 provided in some embodiments of this disclosure can achieve are the same as the beneficial effects that the pressure sensing device 200 provided in the above technical solution can achieve, and will not be repeated here.

[0165] In some examples, the electronic device 300 can be a mobile phone, a computer, or a portable electronic device, enabling the pressure sensor 100 to be applied in technical scenarios that require pressure measurement, such as automobiles and industrial manufacturing.

[0166] The above description is merely a specific embodiment of this disclosure, but the scope of protection of this disclosure is not limited thereto. Any variations or substitutions that can be easily conceived by those skilled in the art within the scope of the technology disclosed in this disclosure should be included within the scope of protection of this disclosure. Therefore, the scope of protection of this disclosure should be determined by the scope of the claims.

Claims

1. A pressure sensor, characterized by The pressure sensor comprises: a first substrate structure comprising a resonant component; a second substrate structure disposed on one side of the first substrate structure in a first direction; a bonding body disposed between and connected to the first substrate structure and the second substrate structure, and forming a cavity between the first substrate structure and the second substrate structure, the bonding body surrounding the cavity. The second substrate structure comprises a first surface facing the first substrate structure; 2. The pressure sensor of claim 1, wherein, The first surface comprises a contact portion in contact with the bonding body, and an intermediate portion surrounded by the contact portion, the intermediate portion being flush with the contact portion. The second substrate structure comprises a second substrate and a second insulating layer stacked in a direction close to the first substrate structure; a surface of the second insulating layer away from the second substrate forms the first surface of the second substrate structure.

3. The pressure sensor of claim 2, wherein, The resonant component is exposed to the cavity; 4. The pressure sensor of claim 1, wherein, The resonant component has a first distance from a surface of the second substrate structure closest to the resonant component; the first distance and a dimension of the bonding body in the first direction have a first difference, and a ratio of an absolute value of the first difference to the first distance is less than or equal to 5%. The cavity is a sealed cavity, and the bonding body comprises a solder layer, the thickness of the solder layer being in a range of 20 μm to 100 μm.

5. The pressure sensor of claim 1, wherein, The pressure sensor further comprises a pad disposed on the second substrate structure; 6. The pressure sensor of claim 5, wherein, The bonding body further comprises: a first connection pattern disposed between the first substrate structure and the solder layer; and a second connection pattern disposed between the second substrate structure and the solder layer; The second connection pattern and the pad comprise the same material. The second substrate structure comprises a conductor structure extending in a second direction intersecting the first direction; 7. The pressure sensor according to any one of claims 1 to 6, wherein The pressure sensor further comprises a pad disposed on the second substrate structure; the resonant component is coupled to the pad at least through the conductor structure. The pad is disposed on a side surface of the second substrate structure close to the first substrate structure and outside the bonding body; 8. The pressure sensor of claim 7, wherein, The area of the second substrate structure is greater than the area of the first substrate structure. The second substrate structure further comprises a circuit structure disposed inside the second substrate structure, the circuit structure comprising the conductor structure and a plurality of conductive pillars coupled to the conductor structure, the conductive pillars extending to a side surface of the second substrate structure in the first direction; 9. The pressure sensor of claim 7, wherein, The resonant component is coupled to the conductor structure through a part of the conductive pillars, and the pad is coupled to the conductor structure through another part of the conductive pillars.

10. The pressure sensor of claim 7, wherein The pressure sensor further comprises a second conductive bump disposed on a side of the second substrate structure close to the first substrate structure; the second conductive bump is coupled to the resonant component. ​ The second substrate structure comprises a second substrate, a first insulating layer, a conductive pattern layer and a second insulating layer which are stacked in a direction close to the first substrate structure; and the conductor structure is arranged in the conductive pattern layer; The pad and the second conductive bump respectively penetrate the second insulating layer and are respectively coupled with the conductor structure.

11. The pressure sensor of claim 7, wherein, The pressure sensor further comprises: A first conductive bump arranged on a side of the resonant assembly close to the second substrate structure; the first conductive bump is coupled with the resonant assembly; and A second conductive bump arranged on a side of the second substrate structure close to the first substrate structure; the second conductive bump is coupled with the first conductive bump; The resonant assembly and the conductor structure are coupled through the first conductive bump and the second conductive bump.

12. The pressure sensor of claim 11, wherein, The second conductive bump and the pad comprise the same material.

13. The pressure sensor of claim 7, wherein, The resonant assembly comprises a driving electrode, a resonant structure and an inductive electrode which are arranged at intervals; the driving electrode is used to input a driving signal to the resonant structure; and the inductive electrode is used to output a signal of the resonant structure; The pressure sensor comprises: A plurality of conductor structures, the plurality of conductor structures comprising a first conductor structure coupled with the driving electrode, a second conductor structure coupled with the resonant structure, and a third conductor structure coupled with the inductive electrode; and A plurality of pads, the plurality of pads comprising a first pad coupled with the first conductor structure, a second pad coupled with the second conductor structure, and a third pad coupled with the third conductor structure.

14. The pressure sensor according to any one of claims 1-6, wherein The first substrate structure comprises a device layer, a third insulating layer and a first substrate which are stacked in a direction away from the second substrate structure; a surface of the first substrate away from the third insulating layer is formed with a first recess; the resonant assembly is arranged in the device layer and on a side of the first recess in the first direction; The second substrate structure comprises a second insulating layer and a second substrate which are stacked in a direction away from the first substrate structure; a surface of the second substrate away from the second insulating layer is formed with a second recess; and the second recess is at least partially opposite to the first recess.

15. A pressure sensing device, characterized by The pressure sensor comprises the pressure sensor according to any one of claims 1-14.

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