Heterogeneous integrated chip for generating tunable microwave source

Abstract

The invention provides a heterogeneous integrated chip for generating a tunable microwave source, and relates to the technical field of optical communication and the technical field of microwaves. The heterogeneous integrated chip comprises an electric chip layer, a silicon switching layer and an optical chip layer which are stacked, the electric chip layer is used for outputting microwave signals; the optical chip layer comprises a micro-ring resonator, the optical chip layer is used for receiving input laser and providing microwave signals for the electric chip layer, and the micro-ring resonator is used for adjusting the frequency of the output microwave signals; and the silicon switching layer is used for integrating the electric chip layer and the optical chip layer. High-quality microwave signals can be output through oscillation of the loop, the difference value between a carrier wave and the resonant wavelength can be tuned by tuning the resonant wavelength of the micro-ring, and finally, the generated microwave signals have large-range tunability in frequency, the tuning range is large, and phase noise is small; the integration level is high and the volume power consumption is small.

Description

Technical Field

[0001] This invention relates to the fields of optical communication technology and microwave technology, and in particular to a heterogeneous integrated chip for generating tunable microwave sources. Background Technology

[0002] Modern wireless communication, satellite transmission, and other fields are increasingly demanding high-frequency, broadband tunable, and low-phase-noise microwave signals. High-frequency microwave signals can achieve higher communication capacity and higher transmission speeds, which is crucial for future technologies such as the Internet of Things and 6G. Optoelectronic oscillators, with their advantages of large optical bandwidth and low loss, have become an excellent source for generating high-frequency, high-quality microwave signals, with a tuning range reaching terahertz.

[0003] Currently, there are many optoelectronic oscillator schemes for generating microwave signals, but most of them require long optical fibers as energy storage materials and only integrate some optical devices on the chip. The electrical devices still need to be discretely attached, resulting in large size and power consumption, making it difficult to integrate with other microwave devices. Moreover, most of them use electrical filters for frequency modulation, which has a small tuning range and high noise, thus restricting the development of communication systems. Summary of the Invention

[0004] In view of the above problems, the present invention provides a heterogeneous integrated chip for generating tunable microwave sources.

[0005] According to an embodiment of the present invention, a heterogeneous integrated chip for generating a tunable microwave source includes: an electrical chip layer, a silicon interposer layer, and an optical chip layer stacked together; the electrical chip layer is used to output a microwave signal; the optical chip layer includes a microring resonator, which is used to receive input laser light and provide a microwave signal to the electrical chip layer, and the microring resonator is used to adjust the frequency of the output microwave signal; the silicon interposer layer is used to integrate the electrical chip layer and the optical chip layer.

[0006] According to an embodiment of the present invention, the optical chip layer further includes: a laser input terminal, a phase modulator, and a detector; the laser input terminal is connected to the input terminal of the phase modulator, the output terminal of the phase modulator is connected to the optical input terminal of the micro-ring resonator, the optical output terminal of the micro-ring resonator is connected to the input terminal of the detector, and the detector is used to process the input optical signal and output a microwave signal.

[0007] According to an embodiment of the present invention, at least two through-silicon vias are provided in the silicon interposer layer, each through-silicon via penetrating the silicon interposer layer vertically, and redistribution structures are provided in both the electrical chip layer and the optical chip layer.

[0008] According to an embodiment of the present invention, the electrical chip layer includes: an electrical coupler, an electrical amplifier, and a microwave signal output terminal; the electrical signal output terminal of the detector is connected to the input terminal of the electrical amplifier through the redistribution structure, through-silicon via, and redistribution structure in the optical chip layer; the output terminal of the electrical amplifier is connected to the input terminal of the electrical coupler; one output terminal of the electrical coupler is connected to the microwave signal input terminal of the phase modulator through the redistribution structure, through-silicon via, and redistribution structure in the optical chip layer; and the other output terminal of the electrical coupler is the microwave signal output terminal.

[0009] According to an embodiment of the present invention, the phase modulator includes a waveguide, a signal electrode and two ground electrodes. The two ground electrodes are symmetrically arranged on both sides of the signal electrode. The signal electrode and any one of the ground electrodes are located on both sides of the waveguide. The signal electrode and the ground electrodes are arranged parallel to the waveguide, and the two ends of the signal electrode and the ground electrodes are aligned.

[0010] According to an embodiment of the present invention, one end of the waveguide is connected to the laser input terminal, and the other end of the waveguide is connected to the optical input terminal of the microring resonator.

[0011] According to an embodiment of the present invention, the laser wavelength input at the laser input terminal is different from the resonant wavelength of the microring resonator.

[0012] According to an embodiment of the present invention, the microring resonator is a notch filter type microring resonator and is a tunable microring resonator.

[0013] According to an embodiment of the present invention, the laser input terminal is disposed at the edge of the optical chip layer, and the microwave signal output terminal is disposed at the edge of the electrical chip layer, wherein the edge of the optical chip layer where the laser input terminal is located is adjacent to the edge of the electrical chip layer where the microwave signal output terminal is located.

[0014] According to an embodiment of the present invention, the laser input terminal, phase modulator, micro-ring resonator and detector are all disposed on the side of the optical chip layer near the silicon transition layer, and the electrical coupler, electrical amplifier and microwave signal output terminal are all disposed on the side of the electrical chip layer near the silicon transition layer.

[0015] The heterogeneous integrated chip for generating a tunable microwave source provided by this invention has at least the following technical advantages:

[0016] 1. This invention can output high-quality microwave signals through loop oscillation, and can tune the difference between the carrier and the resonant wavelength by tuning the resonant wavelength of the micro-loop, thereby changing the signal frequency obtained by the detector beat frequency, so that the generated microwave signal has a wide range of frequency tunability, with a large tuning range and low phase noise.

[0017] 2. The optical and electrical devices required by this invention can be integrated into the optical chip layer and the electrical chip layer respectively. The optical chip layer and the electrical chip layer are heterogeneously integrated together through the silicon interposer layer. This has the advantages of high integration, small size and power consumption, and easy integration with other devices, and facilitates subsequent electrical processing of the output microwave signal. Attached Figure Description

[0018] The above-described features, other objects, and advantages of the present invention will become clearer from the following description of embodiments of the invention with reference to the accompanying drawings, in which:

[0019] Figure 1 This schematically illustrates a structural diagram of a heterogeneous integrated chip for generating a tunable microwave source according to an embodiment of the present disclosure;

[0020] Figure 2 A cross-sectional view of a heterogeneous integrated chip for generating a tunable microwave source is schematically shown according to an embodiment of the present disclosure;

[0021] Figure 3 The diagram illustrates the transmission routes of optical and electrical signals in a heterogeneous integrated chip that generates a tunable microwave source according to an embodiment of the present disclosure.

[0022] Figure 4 This schematic diagram illustrates the structure of an optical chip layer in a heterogeneous integrated chip according to an embodiment of the present disclosure;

[0023] Figure 5 A schematic diagram illustrating the structure of a microring resonator in an optical chip layer according to an embodiment of the present disclosure is shown.

[0024] Figure 6 The diagram schematically illustrates the structure of the electrical chip layer in a heterogeneous integrated chip according to an embodiment of the present disclosure.

[0025] Reference numerals: 1-Electrical chip layer; 2-Silicon interposer layer; 3-Optical chip layer; 101-Electrical coupler; 102-Electrical amplifier; 103-Microwave signal output terminal; 201-Through silicon via; 301-Laser input terminal; 302-Phase modulator; 303-Micro-ring resonator; 304-Detector. Detailed Implementation

[0026] Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings. However, it should be understood that these descriptions are exemplary only and are not intended to limit the scope of the invention. In the following detailed description, numerous specific details are set forth to provide a thorough understanding of the embodiments of the invention for ease of explanation. However, it will be apparent that one or more embodiments may be practiced without these specific details. Furthermore, descriptions of well-known structures and techniques are omitted in the following description to avoid unnecessarily obscuring the concept of the invention.

[0027] The terminology used herein is for the purpose of describing particular embodiments only and is not intended to limit the invention. The terms “comprising,” “including,” etc., as used herein indicate the presence of the stated features, steps, operations, and / or components, but do not exclude the presence or addition of one or more other features, steps, operations, or components.

[0028] All terms used herein (including technical and scientific terms) have the meanings commonly understood by those skilled in the art, unless otherwise defined. It should be noted that the terms used herein are to be interpreted in a manner consistent with the context of this specification, and not in an idealized or overly rigid way.

[0029] When using expressions such as "at least one of A, B and C", they should generally be interpreted in accordance with the meaning that is commonly understood by those skilled in the art (e.g., "a system having at least one of A, B and C" should include, but is not limited to, a system having A alone, a system having B alone, a system having C alone, a system having A and B, a system having A and C, a system having B and C, and / or a system having A, B and C, etc.).

[0030] Figure 1 This schematically illustrates a structural diagram of a heterogeneous integrated chip for generating a tunable microwave source according to an embodiment of the present disclosure; Figure 2 A cross-sectional view of a heterogeneous integrated chip for generating a tunable microwave source is schematically shown according to an embodiment of the present disclosure; Figure 3 The diagram illustrates the transmission routes of optical and electrical signals in a heterogeneous integrated chip that generates a tunable microwave source according to embodiments of the present disclosure.

[0031] like Figures 1 to 3 As shown, a heterogeneous integrated chip for generating a tunable microwave source according to an embodiment of this disclosure includes: an electrical chip layer 1, a silicon interposer layer 2, and an optical chip layer 3 stacked together; the electrical chip layer 1 is used to output microwave signals; the optical chip layer 3 includes a micro-ring resonator 303, which is used to receive input laser light and provide microwave signals to the electrical chip layer 1, and the micro-ring resonator 303 is used to adjust the frequency of the output microwave signal; the silicon interposer layer 2 is used to integrate the electrical chip layer 1 and the optical chip layer 3.

[0032] In the embodiments of this disclosure, the optical chip layer 3 receives the input laser and generates a microwave signal, which is then provided to the electrical chip layer 1. A high-quality microwave signal can be output through loop oscillation. Furthermore, by tuning the resonant wavelength of the micro-loop, the difference between the carrier wave and the resonant wavelength can be tuned, thereby changing the signal frequency obtained by the beat frequency of the detector 304. This results in a wide range of frequency tunability for the generated microwave signal, offering advantages such as a large tuning range and low phase noise. The silicon interposer layer 2 heterogeneously integrates the optical chip layer 3 and the electrical chip layer 1, offering advantages such as high integration density, low size and power consumption, and ease of integration with other devices.

[0033] Figure 4 The diagram illustrates the structure of the optical chip layer 3 in a heterogeneous integrated chip according to an embodiment of the present disclosure.

[0034] like Figure 4 As shown, the optical chip layer 3 also includes: a laser input terminal 301, a phase modulator 302, and a detector 304; the laser input terminal 301 is connected to the input terminal of the phase modulator 302, the output terminal of the phase modulator 302 is connected to the optical input terminal of the micro-ring resonator 303, the optical output terminal of the micro-ring resonator 303 is connected to the input terminal of the detector 304, and the detector 304 is used to process the input optical signal and output a microwave signal.

[0035] The laser carrier input at the laser input terminal 301 is modulated by the phase modulator 302, and after being filtered by the micro-ring resonator 303, the laser carrier enters the detector 304. The detector 304 outputs a microwave signal and sends it into the electrical chip layer 1.

[0036] Figure 5 The schematic diagram illustrates the structure of the microring resonator 303 in the optical chip layer 3 according to an embodiment of the present disclosure.

[0037] like Figure 5 As shown, the micro-ring resonator 303 is a notch filter type micro-ring resonator 303, and it is also a tunable micro-ring resonator 303.

[0038] It's important to understand that the notch-filter microring resonator 303 comprises a straight waveguide and a ring waveguide (microring). At non-resonant wavelengths, most light passes directly through the straight waveguide, transmitting almost unaffected from one port to the other. At resonant wavelengths, light of a specific wavelength satisfying the resonance condition is efficiently coupled from the straight waveguide into the microring. This light circulates within the microring, and when it returns to the coupling region after completing a cycle, its phase differs from the new light wave passing through the straight waveguide by exactly 180 degrees (π radians). These two light waves undergo coherent destructive interference, resulting in a significant attenuation of the intensity of this specific wavelength at the output of the straight waveguide, theoretically even reducing it to zero. The notch-filter microring resonator 303 acts as a high-performance, highly selective "optical filter," precisely removing only a specific sideband from the optical signal passing through it, while allowing the laser carrier and all other sidebands to pass through with almost no loss. Specifically, the frequency response curve of the notch filter microring resonator 303 is a band-stop optical frequency comb, that is, the resonant frequency f, and optical signals at frequencies such as f+FSR, f+2×FSR, etc. will be removed. During filtering, multiple sidebands may be filtered out, but during the process of entering the detector to obtain the signal by frequency beat, the removed sidebands closest to the carrier frequency play a dominant role.

[0039] It is important to understand that the optical signal modulated by phase modulator 302 has symmetrical sidebands. If this optical signal directly enters detector 304, when these sidebands beat with the carrier frequency on detector 304, the sidebands symmetrical about the carrier will generate electrical signals with the same frequency but opposite phase when beating with the carrier's difference frequency. Since the phases are opposite, they cancel each other out, thus no electrical signal of the corresponding frequency is generated, resulting in a net output of zero and no microwave signal generation. For example, a laser carrier λ (frequency f) input to laser input terminal 301, after being modulated by phase modulator 302, generates multiple sidebands f±Δf (Δf can take multiple values). If this laser carrier directly enters detector 304, the beating frequencies between the sidebands will cancel each other out, resulting in no microwave signal generation.

[0040] The micro-ring resonator 303 selectively filters out a specific sideband of the laser carrier, disrupting the symmetry of the double-sideband structure in the original optical signal. When the laser carrier enters the detector 304, the remaining sidebands can no longer completely cancel out the carrier when they beat. The electrical signal generated by the sideband that was filtered out (symmetric about the carrier) can no longer be canceled out, thus generating an electrical signal at a corresponding frequency—that is, a microwave signal with a frequency equal to the difference between the filtered sideband and the carrier frequency. For example, the micro-ring resonator 303 can filter out the sideband at the resonant wavelength (frequency), specifically the resonant frequency closest to the laser carrier frequency f. The corresponding sideband f+( After -f) is filtered out, the laser carrier enters detector 304 and the sidebands are no longer balanced, resulting in beat frequencies from the filtered sideband f+. -f) and the difference frequency signal between the laser carrier frequency f, i.e., the frequency is -f microwave signal.

[0041] Based on the above embodiments, the phase modulator 302 includes a waveguide, a signal electrode, and two ground electrodes. The two ground electrodes are symmetrically arranged on both sides of the signal electrode. The signal electrode and any one of the ground electrodes are located on both sides of the waveguide, and the signal electrode and ground electrodes are arranged parallel to the waveguide, with their ends aligned. One end of the waveguide is connected to the laser input terminal 301, and the other end of the waveguide is connected to the optical input terminal of the microring resonator 303.

[0042] Modulator electrodes are placed on both sides of the waveguide. When a voltage is applied to the electrodes, an electric field is generated inside the waveguide. This electric field changes the refractive index of the electro-optic material (waveguide). The change in refractive index causes a change in the propagation speed of light waves as they pass through the waveguide, thus accumulating a phase shift. Ultimately, the phase of the output light is modulated by the voltage signal. In other words, the voltage applied to the modulator electrodes generates a uniform electric field inside the waveguide, which changes the refractive index of the entire optical path region through the Pockels effect, thereby changing the phase.

[0043] The electrodes are designed as transmission line structures parallel to the optical waveguide, which alleviates the bandwidth limitation caused by the capacitance effect, maximizes the interaction length between the optical field and the modulation electric field, and ensures the uniformity of the interaction, thereby achieving efficient phase modulation with low half-wave voltage.

[0044] Based on the embodiments of this disclosure, such as Figure 2 As shown, at least two through-silicon vias 201 are provided in the silicon interposer layer 2, and each through-silicon via 201 vertically penetrates the silicon interposer layer 2. Rewiring structures (not shown in the figure) are provided in both the electrical chip layer 1 and the optical chip layer 3.

[0045] It is important to understand that the silicon interposer layer 2 is essentially an ultra-thin, high-precision silicon wafer, and the through-silicon via 201 is a micro-conductive channel that vertically penetrates the entire silicon interposer layer 2.

[0046] It is important to understand that corresponding redistribution structures should be designed based on the actual structures of the electrical chip layer 1 and the optical chip layer 3 to achieve connection with the through-silicon via 201. Simultaneously, a corresponding redistribution structure also needs to be designed in the silicon interfacing layer 2 to complete the interconnection between the optical chip layer 3, the electrical chip layer 1, and the through-silicon via 201. The redistribution structure can be composed of alternating layers of dielectric layers, metal wiring layers, and protective layers. The dielectric layer is used for electrical insulation, the metal wiring layer is used for conducting electrical signals, and the protective layer is used for outermost insulation protection.

[0047] Figure 6 The schematic diagram illustrates the structure of the electrical chip layer 1 in a heterogeneous integrated chip according to an embodiment of the present disclosure.

[0048] like Figure 6 As shown, the electrical chip layer 1 includes an electrical coupler 101, an electrical amplifier 102, and a microwave signal output terminal 103. The electrical signal output terminal of the detector 304 is connected to the input terminal of the electrical amplifier 102 through the redistribution structure in the optical chip layer 3, the through-silicon via 201, and the redistribution structure in the electrical chip layer 1. The output terminal of the electrical amplifier 102 is connected to the input terminal of the electrical coupler 101. One output terminal of the electrical coupler 101 is connected to the microwave signal input terminal of the phase modulator 302 through the redistribution structure in the electrical chip layer 1, the through-silicon via 201, and the redistribution structure in the optical chip layer 3. The other output terminal of the electrical coupler 101 is the microwave signal output terminal 103.

[0049] The frequency output by detector 304 is The -f microwave signal enters the electrical amplifier 102 for signal amplification, and then passes through the electrical coupler 101, the redistribution structure in the electrical chip layer 1, the through-silicon via 201, and the redistribution structure in the optical chip layer 3 before being input into the phase modulator 302 to modulate the laser carrier. At this point, the laser carrier sidebands will be spaced at intervals of... There is an enhancement at -f, and then the microwave signal at this frequency oscillates and strengthens continuously in the loop, eventually yielding a high-quality frequency. The -f microwave signal is output through microwave signal output terminal 103.

[0050] According to an embodiment of this disclosure, the laser wavelength input at the laser input terminal 301 is different from the resonant wavelength of the micro-ring resonator 303.

[0051] It's important to understand that if the laser wavelength is exactly the same as the resonant wavelength of the microring, the laser carrier itself will be severely attenuated by the microring in the initial stage of entering the modulation loop, resulting in insufficient optical power for the entire loop to start and maintain the oscillation process. Keeping them detuned is equivalent to opening a "green channel" for the laser carrier unaffected by the microring, allowing it to enter the phase modulator 302 with maximum power and generate initial sidebands. This initial, weak multi-sideband optical signal, when passing through the microring, has only one specific sideband selectively filtered out, thus breaking the spectral symmetry and generating a specific, weak difference-frequency microwave signal (…). -f) creates the necessary conditions, and the microwave signal is then extracted, amplified, and fed back to the phase modulator 302. It is continuously amplified like a "snowball" in a controlled closed loop, eventually stabilizing in a strong oscillation state, and finally outputting a high-quality microwave signal.

[0052] like Figure 5 As shown, the microring resonator 303 has electrodes, and the microring resonator 303 can be tuned by electrical tuning and thermal tuning.

[0053] The resonant frequency of the micro-ring resonator 303 The frequency of the generated microwave signal can be changed through electrical or thermal tuning. The -f option will change accordingly to achieve microwave signal tuning.

[0054] The free spectral range (FSR) of the microring resonator 303 determines that the tuning range is 0~FSR / 2.

[0055] It can be understood that when the resonant frequency of the microring... When tuned to be exactly the same as the laser carrier frequency f, the sidebands that are filtered out are the carrier itself. =f, the generated microwave frequency -f=0, therefore, the lower limit of tuning is 0Hz.

[0056] When the microring begins to be tuned, As the distance from f increases, the frequency of the generated microwaves gradually increases. Simultaneously, the resonant mode of the micro-ring is periodic, with a frequency of... , +FSR, -FSR, ... . Assume the initial state filters out Side strip, when When the frequency is adjusted too far from f, making the microwave frequency greater than FSR / 2, another resonant mode (such as...) -FSR) will be closer to the laser carrier frequency f. According to the filtering characteristics of the micro-ring, the resonant mode closest to the carrier will play a dominant role. At this time, the system will tend to filter out -FSR is the sideband, not the originally set one. This causes the frequency of the generated microwave signal to suddenly jump to f-( -FSR), the frequency value of this microwave signal will be less than FSR / 2. Therefore, the maximum unambiguous tuning range is limited to within FSR / 2.

[0057] like Figure 1 As shown, the laser input terminal 301 is located at the edge of the optical chip layer 3, and the microwave signal output terminal 103 is located at the edge of the electrical chip layer 1. The edge of the optical chip layer 3 where the laser input terminal 301 is located is adjacent to the edge of the electrical chip layer 1 where the microwave signal output terminal 103 is located.

[0058] By physically isolating paths and dividing functions, crosstalk between laser input and microwave output is minimized, while optimizing the internal signal flow of the chip and improving the convenience of packaging and testing.

[0059] like Figure 2 As shown, the laser input terminal 301, phase modulator 302, micro-ring resonator 303 and detector 304 are all disposed on the side of the optical chip layer 3 near the silicon transition layer 2, and the electrical coupler 101, electrical amplifier 102 and microwave signal output terminal 103 are all disposed on the side of the electrical chip layer 1 near the silicon transition layer 2.

[0060] Placing optical devices close to the silicon interposer layer 2 allows for interconnection between devices via through-silicon vias 201 or vertical coupling structures, achieving the shortest path and lowest loss, thus constructing complex optical circuits. Furthermore, since the detector 304 needs to convert optical signals into electrical signals, placing it close to the silicon interposer layer 2 means that its generated electrical signals can be transmitted vertically to the underlying electrical chip layer 1 for processing via the shortest path. This significantly reduces the parasitic effects of electrical leads and improves response speed.

[0061] Those skilled in the art will understand that the features described in the various embodiments of the present invention can be combined or combined in various ways, even if such combinations or combinations are not explicitly described in the present invention. In particular, the features described in the various embodiments of the present invention can be combined and / or combined in various ways without departing from the spirit and teachings of the present invention. All such combinations and / or combinations fall within the scope of the present invention.

[0062] The embodiments of the present invention have been described above. However, these embodiments are merely illustrative and not intended to limit the scope of the invention. Although various embodiments have been described above, this does not mean that the measures in the various embodiments cannot be used advantageously in combination. The scope of the invention is defined by the appended claims and their equivalents. Various substitutions and modifications can be made by those skilled in the art without departing from the scope of the invention, and all such substitutions and modifications should fall within the scope of the invention.

Claims

1. A heterogeneous integrated chip to generate a tunable microwave source, the chip comprising: The application relates to a microwave signal output device. The device comprises an electric chip layer (1), a silicon transfer layer (2) and an optical chip layer (3) which are stacked. The electric chip layer (1) is used for outputting a microwave signal. The optical chip layer (3) comprises a micro-ring resonator (303) and is used for receiving input laser and providing a microwave signal for the electric chip layer (1). The silicon transfer layer (2) is used for integrating the electric chip layer (1) and the optical chip layer (3).

2. The heterogeneous integrated chip generating a tunable microwave source of claim 1, wherein, The optical chip layer (3) further comprises a laser input end (301), a phase modulator (302) and a detector (304). The laser input end (301) is connected with the input end of the phase modulator (302), the output end of the phase modulator (302) is connected with the light input end of the micro-ring resonator (303), the light output end of the micro-ring resonator (303) is connected with the input end of the detector (304), and the detector (304) is used for processing input light signals and outputting a microwave signal. The silicon transfer layer (2) is provided with at least two through silicon vias (201), each of the through silicon vias (201) vertically penetrates the silicon transfer layer (2), and the electric chip layer (1) and the optical chip layer (3) are both provided with a rewiring structure.

3. The heterogeneous integrated chip generating a tunable microwave source of claim 2, wherein, The electric chip layer (1) comprises an electric coupler (101), an electric amplifier (102) and a microwave signal output end (103).

4. The heterogeneous integrated chip generating a tunable microwave source of claim 3, wherein, The electric signal output end of the detector (304) is connected with the input end of the electric amplifier (102) through the rewiring structure in the optical chip layer (3), the through silicon via (201) and the rewiring structure in the electric chip layer (1), the output end of the electric amplifier (102) is connected with the input end of the electric coupler (101), one of the output ends of the electric coupler (101) is connected with the microwave signal input end of the phase modulator (302) through the rewiring structure in the electric chip layer (1), the through silicon via (201) and the rewiring structure in the optical chip layer (3), and the other output end of the electric coupler (101) is the microwave signal output end (103). The phase modulator (302) comprises a waveguide, one signal electrode and two ground electrodes, the two ground electrodes are symmetrically arranged on the two sides of the signal electrode, the signal electrode and any one of the ground electrodes are arranged on the two sides of the waveguide, the signal electrode and the ground electrodes are arranged in parallel with the waveguide, and the two ends of the signal electrode and the ground electrodes are aligned. One end of the waveguide is connected with the laser input end (301), and the other end of the waveguide is connected with the light input end of the micro-ring resonator (303).

5. The heterogeneous integrated chip generating a tunable microwave source of claim 2, wherein, The wavelength of the input laser of the laser input end (301) is different from the resonant wavelength of the micro-ring resonator (303).

6. The heterogeneous integrated chip generating a tunable microwave source of claim 5, wherein, The micro-ring resonator (303) is a trap wave micro-ring resonator (303) and is a tunable micro-ring resonator (303).

7. The heterogeneous integrated chip generating a tunable microwave source of claim 2, wherein, ​ 8. The heterogeneous integrated chip generating a tunable microwave source of claim 1, wherein, ​ 9. The heterogeneous integrated chip generating a tunable microwave source of claim 4, wherein, The laser input end (301) is arranged at the edge of the optical chip layer (3), the microwave signal output end (103) is arranged at the edge of the electric chip layer (1), and the edge of the optical chip layer (3) where the laser input end (301) is located is adjacent to the edge of the electric chip layer (1) where the microwave signal output end (103) is located.

10. The heterogeneous integrated chip generating a tunable microwave source of claim 4, wherein, The laser input end (301), the phase modulator (302), the micro-ring resonator (303) and the detector (304) are all arranged on the side of the optical chip layer (3) close to the silicon adapter layer (2), and the electric coupler (101), the electric amplifier (102) and the microwave signal output end (103) are all arranged on the side of the electric chip layer (1) close to the silicon adapter layer (2).

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