Photoelectric simultaneous transmission vertical interconnection structure and preparation method thereof

Abstract

The invention belongs to the technical field of photoelectric transmission, and relates to a photoelectric simultaneous transmission vertical interconnection structure, which comprises a hollow columnar dielectric layer, a hollow columnar electric signal transmission layer and a columnar optical signal transmission layer with a central support function, which are sequentially formed in a hole formed in a substrate. The hollow columnar electric signal transmission layer is made of copper or tungsten, the columnar optical signal transmission layer is made of a material capable of transmitting visible light or near-infrared light, and the columnar optical signal transmission layers made of different materials can transmit visible light or near-infrared light with different wavelengths. The invention also provides a preparation method of the photoelectric simultaneous transmission vertical interconnection structure, which comprises the following steps of: firstly, etching a hole on the substrate, and then preparing the hollow columnar dielectric layer, the hollow columnar electric transmission layer and the columnar optical signal transmission layer on the inner wall of the hole in sequence. Synchronous conduction of an electric signal and an optical signal in the vertical direction is achieved, the loss is ultralow, the preparation process is simple, and the cost is low.

Description

Technical Field

[0001] This invention relates to the field of optoelectronic transmission technology, and in particular to an optoelectronic simultaneous transmission vertical interconnection structure and its fabrication method. Background Technology

[0002] With the development of integrated circuit manufacturing processes, device dimensions are gradually approaching physical limits, and 3D integration technology is becoming the mainstream direction of technological development. 3D integration technology refers to stacking multiple layers of planar devices and interconnecting them vertically through through-silicon vias (TSVs). This overcomes the limitations of two-dimensional planes, enabling high-density packaging and performance optimization. Simultaneously, with the rapid development of technologies such as 5G, the Internet of Things (IoT), artificial intelligence (AI), and high-performance computing, data centers are increasingly demanding higher bandwidth and energy efficiency. In this context, optoelectronic co-packaging technology has emerged, which improves bandwidth density and energy efficiency by integrating optoelectronic and electronic devices within the same package.

[0003] Existing optoelectronic co-packaging technologies mainly include monolithic integration, 2D integrated packaging, and 3D integrated packaging. Monolithic integration offers advantages such as simple structure and ease of implementation, but it often suffers from high waveguide loss, low photodiode responsivity, and bandwidth limitations, resulting in insufficient optical performance. 2D integrated packaging places optical and electronic chips side-by-side on a printed circuit board, interconnecting them via leads. This method is advantageous due to its ease of packaging and suitability for mass production. However, a significant drawback of 2D integrated packaging is its reliance on leads. Although leads can achieve relatively small diameters, the connection between the optical and electronic chips is limited to one side, severely restricting the number of input / output (I / O) ports. 3D integrated packaging fabricates optical and electronic chips in different layers on the same packaging substrate, using micro-optical systems or optical waveguides to achieve optical signal input and output. Simultaneously, the electronic chips are connected to different layers on the packaging substrate via wires or flexible circuit boards. This method offers advantages such as compact structure and ease of high-speed signal transmission. However, 3D integrated packaging also faces some challenges. First, the compatibility issues between optical and electronic components need to be addressed during manufacturing. Because optical and electronic devices have different material and process requirements, meticulous adjustments and optimizations are necessary during the design and manufacturing process. Secondly, the relatively high manufacturing cost of 3D integrated packaging limits its widespread application to some extent.

[0004] Therefore, there is an urgent need to propose an optoelectronic simultaneous transmission technology that has a high degree of integration, excellent optoelectronic simultaneous transmission performance, low transmission loss, simple process, and low cost. Summary of the Invention

[0005] The purpose of this invention is to address the shortcomings of existing optoelectronic co-packaging technologies by proposing a vertical interconnect structure for simultaneous optoelectronic transmission and its fabrication method. This invention employs a ring-shaped copper layer as the vertical electrical interconnect and uses polymers such as benzocyclobutene, phenylene glycol methyl ether acetate, and acrylates as the central filler. While providing support, these polymers utilize their excellent transmittance for specific wavelengths of light to enable rapid transmission of optical signals, achieving synchronous transmission of electrical and optical signals in the vertical direction. This results in high integration and excellent transmission performance.

[0006] To achieve the above objectives, the present invention adopts the following technical solution: In a first aspect, the present invention provides a photoelectric simultaneous transmission vertical interconnection structure, comprising a hollow columnar dielectric layer, a hollow columnar electrical signal transmission layer and a columnar optical signal transmission layer that are sequentially formed in a hole opened on a substrate; The hollow columnar electrical signal transmission layer is made of copper or tungsten, and its thickness is denoted as . , ,in, The diameter of the hole; The thickness of the hollow columnar dielectric layer is an empirical value. The diameter of the columnar optical signal transmission layer. ,in, The diameter of the visible or near-infrared light beam; The columnar optical signal transmission layer is made of a material capable of transmitting visible or near-infrared light.

[0007] As one possible implementation, the columnar optical signal transmission layer is made of a polymer that can transmit visible light with a wavelength of 400–800 nm or near-infrared light with a wavelength of 800–1600 nm.

[0008] As one possible implementation, the columnar optical signal transmission layer is made of acrylic resin, capable of transmitting visible light with wavelengths of 400–800 nm; or, The columnar optical signal transmission layer is made of benzocyclobutene, capable of transmitting visible to near-infrared light with wavelengths ranging from 600 to 1600 nm; or, The columnar optical signal transmission layer is made of phenylene glycol methyl ether acetate, capable of transmitting visible light with wavelengths from 400 to 900 nm to the edge of the near-infrared spectrum; or, The columnar optical signal transmission layer is made of epoxy resin, capable of transmitting visible light with wavelengths from 400 to 900 nm to the edge of the near-infrared spectrum; or, The columnar optical signal transmission layer is made of polymethyl methacrylate, capable of transmitting visible to near-infrared light with wavelengths of 400–800 nm; or, The columnar optical signal transmission layer is made of a cyclic olefin copolymer, capable of transmitting visible to near-infrared light with wavelengths ranging from 400 to 1600 nm; or, The columnar optical signal transmission layer is made of polypropylene and is capable of transmitting visible to near-infrared light with wavelengths ranging from 600 to 1600 nm; or, The columnar optical signal transmission layer is made of siloxane, capable of transmitting visible to near-infrared light with wavelengths ranging from 600 to 1600 nm; or, The columnar optical signal transmission layer is made of polyimide and can transmit visible to near-infrared light with wavelengths of 500–1500 nm.

[0009] Secondly, the present invention provides a method for fabricating the optoelectronic co-transmission vertical interconnect structure provided in the first aspect, comprising the following steps: S10. Etch a diameter of [missing information] on the substrate. The hole; S11. A thickness of [thickness value missing] is prepared on the inner wall of the hole according to the first preset process parameters. Hollow columnar medium layer; S12. A layer with a thickness of [thickness value missing] is prepared on the inner wall of the hollow columnar dielectric layer according to the second preset process parameters. The hollow columnar electrical transport layer is made of copper or tungsten. S13. A diameter of [missing information] is prepared on the inner wall of the hollow columnar electrical transport layer. The columnar optical signal transmission layer ,in, The diameter of the visible or near-infrared light beam; the material of the columnar light signal transmission layer is a material capable of transmitting visible or near-infrared light.

[0010] As one possible implementation, when the hole is a glass through-hole, the hollow columnar medium layer is a phenelzine adhesion layer; in this case, a chemical vapor deposition process is adopted, and the first preset process parameter combination includes: evaporation temperature 150℃, pyrolysis temperature 680℃, deposition pressure 0.1 Torr, and deposition time 1 hour. Based on this, a phenelzine adhesion layer with a thickness of 1μm is obtained. When the via is a silicon via, the hollow columnar dielectric layer consists of a silicon oxide insulating layer or a polyimide insulating layer and a titanium nitride barrier layer from the outside to the inside. The first preset process parameter combination includes: using plasma-enhanced chemical vapor deposition (PECVD) with a deposition temperature of 250°C, a deposition pressure of 0.1 Torr, and a deposition time of 10 minutes, thereby obtaining a silicon oxide insulating layer with a thickness of 1 μm; or using a vacuum-assisted spin coating process with a polyimide to diluent volume ratio of 3:1, a vacuum treatment time of 5 minutes, a spin coating speed of 3000 rpm, a spin coating time of 30 seconds, and a curing temperature of 240°C, thereby obtaining a polyimide insulating layer with a thickness of 1 μm; or using atomic layer deposition (ALD) with a deposition temperature of 270°C, a deposition pressure of 1 Torr, and a deposition time of 200 minutes, thereby obtaining a titanium nitride barrier layer with a thickness of 60 nm.

[0011] As one possible implementation, S12 specifically includes: S120. A copper seed layer is prepared on the inner wall of the hollow columnar dielectric layer using a sputtering process or a chemical plating process according to a second preset process parameter combination. For the sputtering process, the second preset process parameter combination includes: a deposition temperature of 50°C and a deposition time of 10 minutes, resulting in a copper seed layer with a thickness of 200 nm. For the chemical plating process, the second preset process parameter combination includes: a deposition temperature of 60°C and a deposition time of 30 minutes, resulting in a copper seed layer with a thickness of 200 nm. S121. Transfer the substrate with the prepared copper seed layer to the electroplating equipment, connect the electrodes of the electroplating equipment to the substrate and the anode plate, and the second preset process parameter combination further includes: setting the current density to 0.8 A / dm³. 2 ~1.6A / dm 2 The electroplating time was 30 minutes; based on this, a hollow columnar electrotransport layer with a thickness of 9 μm was obtained.

[0012] As one possible implementation, when the hole is a through hole, S12 and S13 further include: attaching a thermally release film to the bottom of the substrate; the columnar optical signal transmission layer is made of a polymer, and in this case, S13 specifically includes: S130. After the thickener solution is drop-coated onto the substrate surface, it is transferred to a vacuum chamber for vacuuming. After the air bubbles are removed, the coating is homogenized and cured. S131. After the polymer solution is drop-coated onto the substrate surface, it is transferred to a vacuum chamber and vacuumed until the polymer solution fills the entire through-hole, and then pre-curing is performed. S132. Remove the thermal stripping film; S133. Secondary curing.

[0013] Thirdly, the present invention also provides a photoelectric simultaneous transmission vertical interconnection structure, comprising a hollow columnar dielectric layer, a hollow columnar optical signal transmission layer and a columnar electrical signal transmission layer that are sequentially formed in a hole opened on a substrate. The hollow columnar optical signal transmission layer is made of a material capable of transmitting visible or near-infrared light, and its thickness is denoted as . , , The diameter of the visible or near-infrared light beam; The columnar electrical signal transmission layer is made of copper or tungsten, and its diameter is denoted as _____. , ,in, The diameter of the hole; The thickness of the hollow columnar dielectric layer is an empirical value. The thickness of the hollow cylindrical optical signal transmission layer.

[0014] As one possible implementation, the hollow columnar optical signal transmission layer is made of a polymer that can transmit visible light with a wavelength of 400–800 nm or near-infrared light with a wavelength of 800–1600 nm.

[0015] As one possible implementation, the hollow cylindrical optical signal transmission layer is made of acrylic resin, capable of transmitting visible light with wavelengths of 400–800 nm; or, The hollow columnar optical signal transmission layer is made of benzocyclobutene, capable of transmitting visible to near-infrared light with wavelengths of 600–1600 nm; or, The hollow columnar optical signal transmission layer is made of phenylene glycol methyl ether acetate, capable of transmitting visible light with wavelengths from 400 to 900 nm to the edge of the near-infrared spectrum; or, The hollow columnar optical signal transmission layer is made of epoxy resin, capable of transmitting visible light with wavelengths from 400 to 900 nm to the edge of the near-infrared spectrum; or, The hollow columnar optical signal transmission layer is made of polymethyl methacrylate, capable of transmitting visible to near-infrared light with wavelengths of 400–800 nm; or, The hollow columnar optical signal transmission layer is made of a cyclic olefin copolymer, capable of transmitting visible to near-infrared light with wavelengths ranging from 400 to 1600 nm; or, The hollow columnar optical signal transmission layer is made of polypropylene and can transmit visible to near-infrared light with wavelengths of 600–1600 nm; or, The hollow columnar optical signal transmission layer is made of siloxane, capable of transmitting visible to near-infrared light with wavelengths ranging from 600 to 1600 nm; or, The hollow columnar optical signal transmission layer is made of polyimide and can transmit visible to near-infrared light with wavelengths of 500–1500 nm.

[0016] Compared with the prior art, the beneficial effects of the present invention are as follows: 1. The optoelectronic co-transmission vertical interconnect structure proposed in this invention uses a ring-shaped copper layer as the vertical electrical interconnect and high molecular polymers such as benzocyclobutene, phenylene glycol methyl ether acetate, and acrylate as the central filler. While providing support, it utilizes the excellent transmittance of specific wavelengths of light to achieve rapid transmission of optical signals, thus achieving synchronous transmission of electrical and optical signals in the vertical direction. This further improves the integration and performance of the optoelectronic co-packaging system.

[0017] 2. The method for fabricating a vertical interconnect structure for simultaneous optoelectronic transmission proposed in this invention can perform simultaneous optoelectronic transmission, and the fabrication process is simple, low-cost, suitable for optoelectronic co-packaging technology, and has good application prospects.

[0018] 3. Experiments show that the optoelectronic co-transmission vertical interconnection structure sample prepared by the preparation method provided in this invention has ultra-low light transmission loss and the ability to transmit light in the vertical direction. At the same time, it has excellent high-frequency electrical characteristics, ensuring the integrity of the electrical signal while improving the overall performance. Attached Figure Description

[0019] The accompanying drawings, which are included to provide a further understanding of the invention and form part of this invention, illustrate exemplary embodiments of the invention and are used to explain the invention, but do not constitute an undue limitation of the invention. In the drawings: Figure 1 and Figure 5 These are schematic diagrams of two optoelectronic co-transmission vertical interconnection structures proposed in embodiments of the present invention; Figure 2 This is a schematic diagram of the dimensions of each layer of the optoelectronic co-transmission vertical interconnection structure proposed in an embodiment of the present invention; Figure 3 This is a schematic diagram of the fabrication method of the optoelectronic co-transmission vertical interconnect structure with glass through-holes proposed in an embodiment of the present invention; Figure 4 This is a schematic diagram of the method for fabricating a vertical interconnect structure for optoelectronic co-transmission using through-silicon vias proposed in an embodiment of the present invention.

[0020] Figure Labels 1-Substrate, 2-Hollow columnar dielectric layer, 3-Hollow columnar electrical signal transmission layer, 4-Columnar optical signal transmission layer, 5-Hollow columnar optical signal transmission layer, 6-Columnar electrical signal transmission layer. Detailed Implementation

[0021] To facilitate a clear description of the technical solutions in the embodiments of the present invention, the terms "first" and "second" are used to distinguish identical or similar items with essentially the same function and effect. For example, the first threshold and the second threshold are merely used to distinguish different thresholds and do not limit their order. Those skilled in the art will understand that the terms "first" and "second" do not limit the quantity or execution order, and that the terms "first" and "second" are not necessarily different.

[0022] It should be noted that in this invention, the terms "exemplary" or "for example" are used to indicate examples, illustrations, or descriptions. Any embodiment or design described as "exemplary" or "for example" in this invention should not be construed as being more preferred or advantageous than other embodiments or designs. Specifically, the use of terms such as "exemplary" or "for example" is intended to present the relevant concepts in a concrete manner.

[0023] In this invention, "at least one" refers to one or more, and "more than one" refers to two or more. "And / or" describes the relationship between related objects, indicating that three relationships can exist. For example, A and / or B can represent: A alone, A and B simultaneously, or B alone, where A and B can be singular or plural. The character " / " generally indicates that the preceding and following related objects are in an "or" relationship. "At least one" or similar expressions refer to any combination of these items, including any combination of singular or plural items. For example, "at least one of a, b, or c" can represent: a, b, c, a combination of a and b, a combination of a and c, a combination of b and c, or a, b, and c, where a, b, and c can be single or multiple.

[0024] The present invention aims to propose a photoelectric simultaneous transmission vertical interconnect structure and its preparation method. It uses a ring-shaped copper layer as the vertical electrical interconnect and uses high molecular polymers such as benzocyclobutene, phenylene glycol methyl ether acetate, and acrylate as the central filler. While providing support, it utilizes the excellent transmittance of light of a specific wavelength to enable rapid transmission of optical signals, realizing the synchronous transmission of electrical and optical signals in the vertical direction. It has high integration and excellent transmission performance.

[0025] In a first aspect, embodiments of the present invention provide a photoelectric simultaneous transmission vertical interconnection structure, see [link to previous section]. Figure 1 It includes a hollow columnar dielectric layer 2, a hollow columnar electrical signal transmission layer 3, and a columnar optical signal transmission layer 4 that are sequentially formed in holes opened on the substrate 1. For example, the substrate 1 is made of glass or silicon. If the hole is formed on the glass substrate, it is a glass through-hole; if the hole is formed on the substrate, it is a silicon through-hole.

[0026] The hollow columnar electrical signal transmission layer 3 is made of copper or tungsten, and its thickness is denoted as [missing information]. , ,in, The diameter of the hole; The thickness of the hollow columnar dielectric layer 2 is an empirical value. The diameter of the columnar optical signal transmission layer 4 is [missing information]. ,in, The diameter of the visible or near-infrared light beam; See Figure 2 As an example, the diameter of the hole The thickness of the hollow columnar dielectric layer 2 is 60 μm. 2μm, beam diameter The diameter of the columnar optical signal transmission layer 4 is 1600nm. 2 That is, 3.2 μm, then the thickness of the hollow columnar electrical signal transmission layer 3 is... It is 26.4 μm.

[0027] The columnar light signal transmission layer 4 is made of a material capable of transmitting visible light or near-infrared light.

[0028] As one possible implementation, the columnar optical signal transmission layer 4 is made of a polymer that can transmit visible light with a wavelength of 400–800 nm or near-infrared light with a wavelength of 800–1600 nm.

[0029] As one possible implementation, the columnar optical signal transmission layer 4 is made of acrylic resin, capable of transmitting visible light with wavelengths of 400–800 nm; or, The columnar optical signal transmission layer 4 is made of benzocyclobutene, capable of transmitting visible to near-infrared light with wavelengths of 600–1600 nm; or, The columnar optical signal transmission layer 4 is made of phenylene glycol methyl ether acetate, capable of transmitting visible light with wavelengths from 400 to 900 nm to the edge of the near-infrared spectrum; or, The columnar optical signal transmission layer 4 is made of epoxy resin, capable of transmitting visible light with wavelengths from 400 to 900 nm to the edge of the near-infrared spectrum; or, The columnar optical signal transmission layer 4 is made of polymethyl methacrylate, capable of transmitting visible to near-infrared light with wavelengths of 400–800 nm; or, The columnar optical signal transmission layer 4 is made of a cyclic olefin copolymer, capable of transmitting visible to near-infrared light with wavelengths ranging from 400 to 1600 nm; or, The columnar optical signal transmission layer 4 is made of polypropylene and is capable of transmitting visible to near-infrared light with wavelengths of 600–1600 nm; or, The columnar optical signal transmission layer 4 is made of siloxane, capable of transmitting visible to near-infrared light with wavelengths of 600–1600 nm; or, The columnar optical signal transmission layer 4 is made of polyimide and can transmit visible to near-infrared light with wavelengths of 500 to 1500 nm.

[0030] Secondly, embodiments of the present invention provide a method for fabricating the optoelectronic co-transmission vertical interconnect structure provided in the first aspect, see [link to previous section]. Figure 3 It includes the following steps: S10. Etch a diameter of [missing information] on the substrate. The hole; S11. A thickness of [thickness value missing] is prepared on the inner wall of the hole according to the first preset process parameters. Hollow columnar medium layer; As one possible implementation, when the hole is a glass through-hole, the hollow columnar medium layer is a phenelzine adhesion layer; in this case, a chemical vapor deposition process is adopted, and the first preset process parameters include: evaporation temperature 150℃, pyrolysis temperature 680℃, deposition pressure 0.1 Torr, and deposition time 1 hour. Based on this, a phenelzine adhesion layer with a thickness of 1μm is obtained. When the via is a silicon via, the hollow columnar dielectric layer consists of a silicon oxide insulating layer or a polyimide insulating layer and a titanium nitride barrier layer from the outside to the inside. The first preset process parameters include: using plasma-enhanced chemical vapor deposition (PECVD) with a deposition temperature of 250°C, a deposition pressure of 0.1 Torr, and a deposition time of 10 minutes, to obtain a silicon oxide insulating layer with a thickness of 1 μm; or using a vacuum-assisted spin coating process with a polyimide to diluent volume ratio of 3:1, a vacuum treatment time of 5 minutes, a spin coating speed of 3000 rpm, a spin coating time of 30 seconds, and a curing temperature of 240°C, to obtain a polyimide insulating layer with a thickness of 1 μm; or using atomic layer deposition (ALD) with a deposition temperature of 270°C, a deposition pressure of 1 Torr, and a deposition time of 200 minutes, to obtain a titanium nitride barrier layer with a thickness of 60 nm.

[0031] S12. A layer with a thickness of [thickness value missing] is prepared on the inner wall of the hollow columnar dielectric layer according to the second preset process parameters. The hollow columnar electrical transport layer is made of copper or tungsten. As one possible implementation, S12 specifically includes: S120. A copper seed layer is prepared on the inner wall of the hollow columnar dielectric layer using a sputtering process or a chemical plating process according to a second preset process parameter combination. For the sputtering process, the second preset process parameter combination includes: a deposition temperature of 50°C and a deposition time of 10 minutes, resulting in a copper seed layer with a thickness of 200 nm. For the chemical plating process, the second preset process parameter combination includes: a deposition temperature of 60°C and a deposition time of 30 minutes, resulting in a copper seed layer with a thickness of 200 nm. S121. Transfer the substrate with the prepared copper seed layer to the electroplating equipment, connect the electrodes of the electroplating equipment to the substrate and the anode plate, and the second preset process parameter combination further includes: setting the current density to 0.8 A / dm³. 2 ~1.6A / dm 2 The electroplating time was 30 minutes; based on this, a hollow columnar electrotransport layer with a thickness of 9 μm was obtained.

[0032] S13. A diameter of [missing information] is prepared on the inner wall of the hollow columnar electrical transport layer. The columnar optical signal transmission layer ,in, The diameter of the visible or near-infrared light beam; the material of the columnar light signal transmission layer is a material capable of transmitting visible or near-infrared light.

[0033] As one possible implementation, when the hole is a through hole, S12 and S13 further include: attaching a thermally release film to the bottom of the substrate; the columnar optical signal transmission layer is made of a polymer, and in this case, S13 specifically includes: S130. After the thickener solution is drop-coated onto the substrate surface, it is transferred to a vacuum chamber for vacuuming. After the air bubbles are removed, the coating is homogenized and cured. S131. After the polymer solution is drop-coated onto the substrate surface, it is transferred to a vacuum chamber and vacuumed until the polymer solution fills the entire through-hole, and then pre-curing is performed. S132. Remove the thermal stripping film; S133. Secondary curing.

[0034] Example 1 This embodiment provides a method for fabricating a vertical interconnect structure for photoelectric simultaneous transmission when the aperture is a glass through-hole, including the following steps: Step 1: Select a 4-inch glass wafer as the substrate. First, perform a standard wet cleaning process (Radio Corporation of America, RCA) on the glass wafer to remove organic matter, natural oxide layer, metal, particulate matter, and other contaminants from the surface. Then, laser-induced etching is used to create vias with a diameter of 65μm and a depth of 270μm. Finally, acetone, isopropanol, anhydrous ethanol, and deionized water are used to clean the photoresist.

[0035] Step 2: A pyrene adhesion layer with an average thickness of 1 μm was prepared using chemical vapor deposition (CVD). The CVD process parameters were set as follows: evaporation temperature 150℃, pyrolysis temperature 680℃, deposition pressure 0.1 Torr, and deposition time 1 hour.

[0036] Step 3: Prepare a copper seed layer using a chemical plating process. The chemical plating process parameters are set as follows: deposition temperature 60℃, deposition time 30 minutes, to obtain a copper seed layer with a thickness of 200nm. Step 4: Transfer the glass wafer with the prepared copper seed layer to the electroplating equipment, connect the electrodes to the substrate and anode plate of the electroplating equipment, and set the current density to 1.2 A / dm². 2 The electroplating time was 30 minutes, and a hollow columnar electrotransport layer with an average thickness of 9 μm was obtained.

[0037] Step 5: Attach the thermally release film to the bottom of the glass wafer substrate.

[0038] Step 6: Prepare a 15% solids content spin-on glass (SOG) solution as a filler material. Drop the SOG solution onto the glass wafer, then transfer it to a vacuum chamber for vacuum treatment. After removing all air bubbles, perform homogenization at 500 rpm for 5 seconds. Transfer the homogenized glass wafer to a nitrogen oven and heat it from room temperature to 300°C. Maintain the temperature at 300°C for 60 minutes, then cool it down to room temperature until the glass wafer is completely cured.

[0039] Step 7: Apply the thickener AP3000 solution dropwise onto the surface of the glass wafer, then transfer it to a vacuum chamber for vacuum treatment. After removing all air bubbles, perform homogenization using the following parameters: 500 rpm × 6s + 3krpm × 40s. Transfer the homogenized glass wafer to a hot plate at 95℃ and heat for 10 minutes to complete curing.

[0040] Step 8: Using benzocyclobutene solution as a filler material, drop-coat the benzocyclobutene solution onto a glass wafer. Transfer the glass wafer coated with benzocyclobutene solution to a vacuum chamber for vacuum treatment to accelerate the flow of the solution into the holes, allowing the benzocyclobutene solution to quickly fill the entire through-hole. Then, transfer the glass wafer to a hot plate at 120°C and heat for 10 minutes to complete the pre-curing process.

[0041] Step 9: Remove the thermal stripping film.

[0042] Step 10: Transfer the glass wafer after removing the heat-peeling film to a nitrogen oven, heat it from room temperature for 40 minutes, then raise it to 250°C, maintain it at 250°C for 80 minutes, and then cool it down from 250°C to room temperature to complete the secondary curing.

[0043] It should be noted that in this embodiment, the purpose of applying the heat-release film in step 5 is to convert the through holes into blind holes, thereby enabling subsequent vacuuming and coating operations. The purpose of step 6 is to prepare the cladding layer, and the purpose of step 7 is to prepare the adhesion layer. In specific applications, steps 6 and 7 are not necessarily necessary; this embodiment is only for achieving better transmission performance.

[0044] Next, the sample prepared in this embodiment was verified. A vertical-cavity surface-emitting laser (VCSEL) was used to visually characterize the light intensity on the right side of the sample under left-side illumination conditions to analyze its light transmission capability. The sample was placed vertically on a sample holder. The left side was connected to a 1.55 μm wavelength, 0.5 mW VCSEL via an 8 / 125 single-mode fiber, and the right side was connected to an optical power meter via an 8 / 125 single-mode fiber. After the equipment was assembled, the optical power meter and the VCSEL were turned on. The glass through-hole structure filled with benzocyclobutene exhibits ultra-low light transmission loss and the ability to transmit light in the vertical direction. At the same time, the glass through-hole structure has excellent high-frequency electrical characteristics, ensuring the integrity of the electrical signal while improving the overall performance.

[0045] Example 2 This embodiment provides a method for fabricating a vertical interconnect structure for photoelectric co-transmission when the via is a through-silicon via (TSV). See [link to documentation]. Figure 4 It includes the following steps: Step 1: Select 4-inch silicon material as the substrate and use deep reactive ion etching process to prepare silicon blind vias.

[0046] Step 2: Prepare a hollow columnar dielectric layer, which includes an insulating silicon oxide layer and a barrier titanium nitride layer. The insulating silicon oxide layer is prepared using plasma-enhanced chemical vapor deposition (PECVD) with the following process parameters: deposition temperature 250℃, deposition pressure 0.1 Torr, and deposition time 10 minutes. The barrier titanium nitride layer is prepared using atomic layer deposition (ALD).

[0047] Step 3: Prepare a copper seed layer using a chemical plating process. The chemical plating process parameters are set as follows: deposition temperature 60℃, deposition time 30 minutes, to obtain a copper seed layer with a thickness of 200nm. Step 4: Transfer the silicon substrate with the prepared copper seed layer to the electroplating equipment, connect the electrodes of the electroplating equipment to the substrate and the anode plate, and set the current density to 1.2 A / dm². 2 The electroplating time was 30 minutes, and a hollow columnar electrotransport layer with an average thickness of 9 μm was obtained.

[0048] Step 5: Using benzocyclobutene solution as a filler material, the benzocyclobutene solution is drop-coated onto a silicon substrate. The silicon substrate coated with benzocyclobutene solution is then transferred to a vacuum chamber for vacuum treatment to accelerate the flow of the solution into the holes, allowing the benzocyclobutene solution to quickly fill the entire blind via. The silicon substrate is then transferred to a hot plate at 120°C and heated for 10 minutes to complete the pre-curing process.

[0049] Step 6: Remove excess benzocyclobutene and copper seed layer using chemical mechanical polishing.

[0050] Step 7: Process the other side of the silicon substrate by thinning and chemical mechanical polishing to prepare silicon blind holes into through-silicon vias.

[0051] The method for fabricating a vertical interconnect structure for simultaneous optoelectronic transmission provided by this invention enables simultaneous optoelectronic transmission, and the fabrication process is simple, low-cost, suitable for optoelectronic co-packaging technology, and has good application prospects.

[0052] Thirdly, embodiments of the present invention provide a photoelectric simultaneous transmission vertical interconnection structure, see [link to relevant documentation]. Figure 5 It includes a hollow columnar dielectric layer 2, a hollow columnar optical signal transmission layer 5, and a columnar electrical signal transmission layer 6 that simultaneously provides central support, all sequentially formed within holes formed in the substrate 1. The hollow columnar optical signal transmission layer 5 is made of a material capable of transmitting visible or near-infrared light, and its thickness is denoted as . , , The diameter of the visible or near-infrared light beam; The columnar electrical signal transmission layer 6 is made of copper or tungsten, and its diameter is denoted as [missing information]. , ,in, The diameter of the hole; The thickness of the hollow columnar dielectric layer is an empirical value. The thickness of the hollow cylindrical optical signal transmission layer.

[0053] As one possible implementation, the hollow columnar optical signal transmission layer 5 is made of a polymer that can transmit visible light with a wavelength of 400–800 nm or near-infrared light with a wavelength of 800–1600 nm.

[0054] As one possible implementation, the hollow cylindrical optical signal transmission layer 5 is made of acrylic resin, capable of transmitting visible light with wavelengths of 400–800 nm; or, The hollow columnar optical signal transmission layer 5 is made of benzocyclobutene, capable of transmitting visible to near-infrared light with wavelengths of 600–1600 nm; or, The hollow columnar optical signal transmission layer 5 is made of phenylene glycol methyl ether acetate, capable of transmitting visible light with wavelengths from 400 to 900 nm to the edge of the near-infrared spectrum; or, The hollow columnar optical signal transmission layer 5 is made of epoxy resin, capable of transmitting visible light with wavelengths from 400 to 900 nm to the edge of the near-infrared spectrum; or, The hollow columnar optical signal transmission layer 5 is made of polymethyl methacrylate, capable of transmitting visible to near-infrared light with wavelengths of 400–800 nm; or, The hollow columnar optical signal transmission layer 5 is made of a cyclic olefin copolymer, capable of transmitting visible to near-infrared light with wavelengths of 400–1600 nm; or, The hollow columnar optical signal transmission layer 5 is made of polypropylene and is capable of transmitting visible to near-infrared light with wavelengths of 600–1600 nm; or, The hollow columnar optical signal transmission layer 5 is made of siloxane, capable of transmitting visible to near-infrared light with wavelengths of 600–1600 nm; or, The hollow columnar optical signal transmission layer 5 is made of polyimide and can transmit visible light to near-infrared light with wavelengths of 500 to 1500 nm.

[0055] The optoelectronic co-transmission vertical interconnect structure proposed in this invention uses a ring-shaped copper layer as the vertical electrical interconnect and high molecular polymers such as benzocyclobutene, phenylene glycol methyl ether acetate, and acrylate as the central filler. While providing support, it utilizes the excellent transmittance of specific wavelengths of light to achieve rapid transmission of optical signals, thus achieving synchronous transmission of electrical and optical signals in the vertical direction. This further improves the integration and performance of the optoelectronic co-packaging system.

[0056] Although the invention has been described herein in conjunction with various embodiments, those skilled in the art will understand and implement other variations of the disclosed embodiments by reviewing the accompanying drawings, the disclosure, and the description of the drawings, in carrying out the claimed invention. In this specification, the word "comprising" does not exclude other components or steps, and "a" or "an" does not exclude multiple components. A single processor or other unit can implement several of the functions listed in the specification. While certain measures are described in different embodiments, this does not mean that these measures cannot be combined to produce good results.

[0057] Although the invention has been described in conjunction with specific features and embodiments, it is obvious that various modifications and combinations can be made therein without departing from the spirit and scope of the invention. Accordingly, this specification and drawings are merely illustrative of the invention and are considered to cover any and all modifications, variations, combinations, or equivalents within the scope of the invention. Clearly, those skilled in the art can make various alterations and modifications to the invention without departing from its spirit and scope. Thus, if such modifications and modifications fall within the scope of the invention and its equivalents, the invention is also intended to include such modifications and modifications.

Claims

1. A photoelectric simultaneous transmission vertical interconnection structure, characterized in that, It includes a hollow columnar dielectric layer, a hollow columnar electrical signal transmission layer, and a columnar optical signal transmission layer that simultaneously serve as a central support, all sequentially formed within holes formed in a substrate. The hollow columnar electrical signal transmission layer is made of copper or tungsten, and its thickness is denoted as . , ,in, The diameter of the hole; The thickness of the hollow columnar dielectric layer is an empirical value. The diameter of the columnar optical signal transmission layer. ,in, The diameter of the visible or near-infrared light beam; The columnar optical signal transmission layer is made of a material capable of transmitting visible or near-infrared light.

2. The optoelectronic simultaneous transmission vertical interconnection structure according to claim 1, characterized in that, The columnar optical signal transmission layer is made of a high-molecular polymer and can transmit visible light with a wavelength of 400–800 nm or near-infrared light with a wavelength of 800–1600 nm.

3. The optoelectronic simultaneous transmission vertical interconnection structure according to claim 1, characterized in that, The columnar optical signal transmission layer is made of acrylic resin, capable of transmitting visible light with wavelengths of 400–800 nm; or, The columnar optical signal transmission layer is made of benzocyclobutene, capable of transmitting visible to near-infrared light with wavelengths ranging from 600 to 1600 nm; or, The columnar optical signal transmission layer is made of phenylene glycol methyl ether acetate, capable of transmitting visible light with wavelengths from 400 to 900 nm to the edge of the near-infrared spectrum; or, The columnar optical signal transmission layer is made of epoxy resin, capable of transmitting visible light with wavelengths from 400 to 900 nm to the edge of the near-infrared spectrum; or, The columnar optical signal transmission layer is made of polymethyl methacrylate, capable of transmitting visible to near-infrared light with wavelengths of 400–800 nm; or, The columnar optical signal transmission layer is made of a cyclic olefin copolymer, capable of transmitting visible to near-infrared light with wavelengths ranging from 400 to 1600 nm; or, The columnar optical signal transmission layer is made of polypropylene and is capable of transmitting visible to near-infrared light with wavelengths ranging from 600 to 1600 nm; or, The columnar optical signal transmission layer is made of siloxane, capable of transmitting visible to near-infrared light with wavelengths ranging from 600 to 1600 nm; or, The columnar optical signal transmission layer is made of polyimide and can transmit visible to near-infrared light with wavelengths of 500–1500 nm.

4. A method for fabricating a photoelectric co-transmission vertical interconnect structure according to any one of claims 1 to 3, characterized in that, Includes the following steps: S10. Etch a diameter of [missing information] on the substrate. The hole; S11. A thickness of [thickness value missing] is prepared on the inner wall of the hole according to the first preset process parameters. Hollow columnar medium layer; S12. A layer with a thickness of [thickness value missing] is prepared on the inner wall of the hollow columnar dielectric layer according to the second preset process parameters. The hollow columnar electrical transport layer is made of copper or tungsten. S13. A diameter of [missing information] is prepared on the inner wall of the hollow columnar electrical transport layer. The columnar optical signal transmission layer ,in, The diameter of the visible or near-infrared light beam; the material of the columnar light signal transmission layer is a material capable of transmitting visible or near-infrared light.

5. The method for fabricating the optoelectronic co-transmission vertical interconnection structure according to claim 4, characterized in that, When the hole is a glass through-hole, the hollow columnar medium layer is a pyrene adhesive layer; At this point, a chemical vapor deposition process is adopted, and the first preset process parameter combination includes: evaporation temperature 150℃, pyrolysis temperature 680℃, deposition pressure 0.1 Torr, and deposition time 1 hour. Based on this, a 1μm thick pyrene adhesion layer is obtained. When the via is a silicon via, the hollow columnar dielectric layer comprises, from the outside to the inside, a silicon oxide insulating layer or a polyimide insulating layer and a titanium nitride barrier layer; the first preset process parameter combination includes: using plasma-enhanced chemical vapor deposition (PECVD) with a deposition temperature of 250°C, a deposition pressure of 0.1 Torr, and a deposition time of 10 minutes, thereby obtaining a silicon oxide insulating layer with a thickness of 1 μm; or using a vacuum-assisted spin coating process with a polyimide to diluent volume ratio of 3:1, a vacuum treatment time of 5 minutes, a spin coating speed of 3000 rpm, a spin coating time of 30 seconds, and a curing temperature of 240°C, thereby obtaining a polyimide insulating layer with a thickness of 1 μm; or using an atomic layer deposition (ALD) process with a deposition temperature of 270°C, a deposition pressure of 1 Torr, and a deposition time of 200 minutes, thereby obtaining a titanium nitride barrier layer with a thickness of 60 nm.

6. The method for fabricating the optoelectronic co-transmission vertical interconnect structure according to claim 5, characterized in that, S12 specifically includes: S120. A copper seed layer is prepared on the inner wall of the hollow columnar dielectric layer using a sputtering process or a chemical plating process according to a second preset process parameter combination. For the sputtering process, the second preset process parameter combination includes: a deposition temperature of 50°C and a deposition time of 10 minutes, resulting in a copper seed layer with a thickness of 200 nm. For the chemical plating process, the second preset process parameter combination includes: a deposition temperature of 60°C and a deposition time of 30 minutes, resulting in a copper seed layer with a thickness of 200 nm. S121. Transfer the substrate with the prepared copper seed layer to the electroplating equipment, connect the electrodes of the electroplating equipment to the substrate and the anode plate, and the second preset process parameter combination further includes: setting the current density to 0.8 A / dm³. 2 ~1.6A / dm 2 The electroplating time was 30 minutes; based on this, a hollow columnar electrotransport layer with a thickness of 9 μm was obtained.

7. The method for fabricating the optoelectronic co-transmission vertical interconnection structure according to claim 4, characterized in that, When the hole is a through hole, S12 and S13 further include: a thermally peelable film bonded to the bottom of the substrate; the columnar optical signal transmission layer is made of a polymer, and in this case, S13 specifically includes: S130. After the thickener solution is drop-coated onto the substrate surface, it is transferred to a vacuum chamber for vacuuming. After the air bubbles are removed, the coating is homogenized and cured. S131. After the polymer solution is drop-coated onto the substrate surface, it is transferred to a vacuum chamber and vacuumed until the polymer solution fills the entire through-hole, and then pre-curing is performed. S132. Remove the thermal stripping film; S133. Secondary curing.

8. A photoelectric simultaneous transmission vertical interconnection structure, characterized in that, It includes a hollow columnar dielectric layer, a hollow columnar optical signal transmission layer, and a columnar electrical signal transmission layer that simultaneously serve as a central support, all sequentially formed within holes formed in a substrate. The hollow columnar optical signal transmission layer is made of a material capable of transmitting visible or near-infrared light, and its thickness is denoted as . , , The diameter of the visible or near-infrared light beam; The columnar electrical signal transmission layer is made of copper or tungsten, and its diameter is denoted as _____. , ,in, The diameter of the hole; The thickness of the hollow columnar dielectric layer is an empirical value. The thickness of the hollow cylindrical optical signal transmission layer.

9. The optoelectronic simultaneous transmission vertical interconnection structure according to claim 8, characterized in that, The hollow columnar optical signal transmission layer is made of a high molecular polymer and can transmit visible light with a wavelength of 400-800nm ​​or near-infrared light with a wavelength of 800-1600nm.

10. The optoelectronic simultaneous transmission vertical interconnection structure according to claim 8, characterized in that, The hollow columnar optical signal transmission layer is made of acrylic resin, capable of transmitting visible light with wavelengths of 400–800 nm; or, The hollow columnar optical signal transmission layer is made of benzocyclobutene, capable of transmitting visible to near-infrared light with wavelengths of 600–1600 nm; or, The hollow columnar optical signal transmission layer is made of phenylene glycol methyl ether acetate, capable of transmitting visible light with wavelengths from 400 to 900 nm to the edge of the near-infrared spectrum; or, The hollow columnar optical signal transmission layer is made of epoxy resin, capable of transmitting visible light with wavelengths from 400 to 900 nm to the edge of the near-infrared spectrum; or, The hollow columnar optical signal transmission layer is made of polymethyl methacrylate, capable of transmitting visible to near-infrared light with wavelengths of 400–800 nm; or, The hollow columnar optical signal transmission layer is made of a cyclic olefin copolymer, capable of transmitting visible to near-infrared light with wavelengths ranging from 400 to 1600 nm; or, The hollow columnar optical signal transmission layer is made of polypropylene and can transmit visible to near-infrared light with wavelengths of 600–1600 nm; or, The hollow columnar optical signal transmission layer is made of siloxane, capable of transmitting visible to near-infrared light with wavelengths ranging from 600 to 1600 nm; or, The hollow columnar optical signal transmission layer is made of polyimide and can transmit visible light to near-infrared light with wavelengths of 500–1500 nm.

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