Feedthrough structure and semiconductor processing apparatus

Abstract

This application relates to the field of semiconductor equipment technology, and particularly to a feed structure and semiconductor processing equipment. The feed structure includes an upper electrode assembly, electrode lead-out posts, a conductive sealing layer, a uniform gas insulating layer, and an electrical connection layer. The upper electrode assembly includes at least two electrode structures separated by an insulating structure. There are multiple electrode lead-out posts, each connected to at least two electrode structures. The conductive sealing layer is used for vacuum sealing. The uniform gas insulating layer is used for distributing process gases and providing electrical isolation. The electrical connection layer is used to connect an external radio frequency power supply to independently apply radio frequency power to the at least two electrode structures. By partitioning the upper electrode and independently controlling the radio frequency power of each region, the radial distribution of plasma in the reaction chamber can be actively adjusted. The uniform gas insulating layer ensures uniform gas entry, and the conductive sealing layer enables electrical signal transmission while maintaining a vacuum, thereby achieving active and real-time control of the plasma density distribution, and thus improving the uniformity of thin film deposition.

Description

Technical Field

[0001] This application relates to the field of semiconductor equipment technology, and in particular to a feed structure and semiconductor processing equipment. Background Technology

[0002] In plasma-enhanced chemical vapor deposition (PECVD), the inherent geometry of the reaction chamber, the gas inlet layout, and the pump position limit the uniformity of the electric and gas flow distributions within the chamber, resulting in differences between the center and edge regions of the wafer. This distribution difference directly leads to a non-uniform plasma density distribution along the wafer's radial direction, and simultaneously causes a gradient change in the concentration of gaseous reactants in the radial direction. Ultimately, this manifests as significant deviations in the thickness and refractive index of the deposited film at the wafer's edge and center, severely impacting the consistency and yield of device fabrication.

[0003] To improve the aforementioned uniformity issues, existing technologies mostly rely on passive optimization methods, such as adjusting the hole distribution of the spray plate to optimize airflow uniformity, adjusting the distance between the upper and lower electrodes to correct the electric field distribution, using a mask to block local areas, or adopting an upper electrode design that is much larger than the deposition area required to weaken the edge effect. However, once the hardware structure is fixed, the subsequent adjustment space is extremely small, making it difficult to adapt to the deposition requirements of different process formulations and different wafer sizes. Summary of the Invention

[0004] This application aims to improve at least one technical problem in the background art.

[0005] This application provides a feed structure, which includes:

[0006] An upper electrode assembly comprising at least two electrode structures separated by an insulating structure;

[0007] Multiple electrode lead-out posts are respectively connected to the at least two electrode structures;

[0008] A conductive sealing layer, which is fixedly connected to the plurality of said electrode lead-out posts, is used for vacuum sealing;

[0009] A uniform gas insulating layer is disposed between the conductive sealing layer and the electrode structure for distributing process gases and providing electrical isolation.

[0010] An electrical connection layer, disposed on and connected to the conductive sealing layer, is used to connect an external radio frequency power supply to independently apply radio frequency power to the at least two electrode structures.

[0011] According to some technical solutions of this application, the insulating structure is an annular insulating ring, the electrode structure includes an outer ring electrode and an inner ring electrode, the insulating ring is disposed between the outer ring electrode and the inner ring electrode, and a plurality of electrode lead-out posts are respectively disposed on the outer ring electrode and the inner ring electrode.

[0012] According to some technical solutions of this application, the edge of the insulating ring protrudes from the outer surface of the outer ring electrode and the inner ring electrode.

[0013] According to some technical solutions of this application, the conductive sealing layer includes an outer sealing ring and an inner sealing ring. The outer sealing ring corresponds to the position of the outer ring electrode, and the inner sealing ring corresponds to the position of the inner ring electrode. The electrode lead-out post on the outer ring electrode is fixed to the outer sealing ring, and the electrode lead-out post on the inner ring electrode is fixed to the inner sealing ring.

[0014] According to some technical solutions of this application, the conductive sealing layer further includes multiple sealing rings, and sealing grooves are respectively provided on the outer sealing ring and the inner sealing ring, and the sealing rings cooperate with the sealing grooves.

[0015] According to some technical solutions of this application, the electrical connection layer includes an outer ring electrical interface, an inner ring electrical interface and a gas feed interface arranged at intervals. The outer ring electrical interface is electrically connected to the outer sealing ring through a first conductive connector. The inner ring electrical interface is electrically connected to the inner sealing ring through a second conductive connector. The gas feed interface is connected to the gas-uniform insulation layer.

[0016] According to some technical solutions of this application, the electrical connection layer further includes a feed sealing disk for compression sealing, the first conductive connector and the second conductive connector are both conductive rings, and the gas feed interface and the conductive ring are spaced apart on the feed sealing disk.

[0017] According to some technical solutions of this application, the gas-uniform insulating layer includes at least one insulating gas-uniform plate, which is disposed above the upper electrode assembly. A plurality of electrode lead-out posts pass through the insulating gas-uniform plate and are electrically connected to the corresponding conductive rings. A plurality of gas channels are uniformly distributed along the surface of the insulating gas-uniform plate.

[0018] According to some technical solutions of this application, the gas-uniform insulating layer further includes an insulating disk, which is disposed on the gas-uniform plate and between the inner sealing ring and the outer sealing ring. The insulating disk has a plurality of gas-uniform holes along the circumferential direction, and the gas-uniform holes and the gas channel are staggered.

[0019] This application also provides a semiconductor processing apparatus, which includes the feed structure described above.

[0020] The feed structure provided in this application has at least the following advantages: by dividing the upper electrode into sections and independently controlling the radio frequency power of each section, the radial distribution of plasma in the reaction chamber can be actively adjusted. Simultaneously, the uniform gas insulating layer ensures uniform gas entry, and the conductive sealing layer 300 achieves electrical signal transmission while maintaining a vacuum, thereby enabling active and real-time control of the plasma density distribution and improving the uniformity of thin film deposition. Attached Figure Description

[0021] Figure 1 A three-dimensional structural diagram of the feed structure provided in the embodiments of this application;

[0022] Figure 2 A three-dimensional structural diagram of the upper electrode assembly provided in the embodiments of this application;

[0023] Figure 3 A bottom view of the upper electrode assembly provided in an embodiment of this application;

[0024] Figure 4 An installation structure diagram of the insulating gas distribution plate provided in the embodiments of this application;

[0025] Figure 5 This is a diagram showing the installation structure of the conductive sealing layer provided in an embodiment of this application.

[0026] Figure 6 This is a top view of the conductive sealing layer provided in an embodiment of this application;

[0027] Figure 7 This is a cross-sectional structural schematic diagram of the feed structure provided in the embodiments of this application;

[0028] Figure 8 A schematic diagram of the cross-sectional structure of the feed structure provided in the embodiments of this application from another angle;

[0029] Figure 9 This is a schematic diagram of the airflow direction of the feed structure provided in the embodiments of this application;

[0030] Figure 10 This is a three-dimensional structural diagram of the isolation structure provided in the embodiments of this application.

[0031] In the attached diagram: 100 - Upper electrode assembly; 110 - Outer ring electrode; 120 - Insulating ring; 130 - Inner ring electrode; 200 - Electrode lead-out post; 300 - Conductive sealing layer; 310 - External sealing ring; 320 - Internal sealing ring; 330 - Sealing ring; 340 - Sealing groove; 400 - Gas equalization insulating layer; 410 - Insulating gas equalization plate; 411 - Gas channel; 420 - Insulating disk; 421 - Gas equalization hole; 500 - Electrical connection layer; 510 - Outer ring electrical interface; 520 - Inner ring electrical interface; 530 - Gas feed interface; 540 - Feed sealing disk; 550 - First conductive connector; 560 - Second conductive connector. Detailed Implementation

[0032] The embodiments of this application are described in detail below. Examples of these embodiments are shown in the accompanying drawings, wherein the same or similar reference numerals denote the same or similar elements or elements having the same or similar functions throughout. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain the present invention, and should not be construed as limiting the present invention.

[0033] In the description of this application, it should be understood that the orientation descriptions, such as up, down, front, back, left, right, etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation or be constructed or operated in a specific orientation. Therefore, they should not be construed as limiting the present invention.

[0034] In the description of this application, unless otherwise expressly defined, terms such as "setup," "installation," and "connection" should be interpreted broadly, and those skilled in the art can reasonably determine the specific meaning of the above terms in this application in conjunction with the specific content of the technical solution.

[0035] The following is combined with Figures 1 to 10 Embodiments of the present invention will be described.

[0036] This application provides a feed structure, which includes an upper electrode assembly 100, an electrode lead-out post 200, a conductive sealing layer 300, a uniform gas insulating layer 400, and an electrical connection layer 500.

[0037] Specifically, the upper electrode assembly 100 includes at least two electrode structures separated by an insulating structure;

[0038] There are more than 200 electrode leads, and each of them is connected to at least two electrode structures, that is, a portion of the electrode leads 200 are connected to one electrode structure, and another portion of the electrode leads 200 are connected to another electrode structure.

[0039] The conductive sealing layer 300 is fixedly connected to the plurality of electrode lead-out posts 200 for vacuum sealing;

[0040] A uniform gas insulating layer 400 is disposed between the conductive sealing layer 300 and the electrode structure to uniformly distribute process gas and provide electrical isolation.

[0041] An electrical connection layer 500 is disposed on and connected to the conductive sealing layer 300, and is used to connect an external radio frequency power supply to independently apply radio frequency power to the at least two electrode structures. The external independent radio frequency power supply is connected through the electrical connection layer 500. The electrical connection layer 500 is electrically connected to the conductive sealing layer 300. The conductive sealing layer 300 transmits the radio frequency power to at least two electrode structures of the upper electrode assembly 100 through multiple electrode lead-out posts 200. After the process gas is introduced, it is evenly dispersed through the gas channel 411 of the gas uniform insulating layer 400 and then enters the reaction chamber.

[0042] Therefore, by partitioning the upper electrode and independently controlling the radio frequency power of each zone, the radial distribution of plasma within the reaction chamber can be actively adjusted. Simultaneously, the uniform gas insulating layer 400 ensures uniform gas entry, and the conductive sealing layer 300 maintains a vacuum while transmitting electrical signals, thereby achieving active and real-time control of the plasma density distribution and improving the uniformity of thin film deposition.

[0043] Because the deposition rate at the wafer edge is relatively slow, the electrode deposition area is divided into a central region and an outer region. Optionally, in some embodiments, the insulating structure is an annular insulating ring 120. The at least two electrode structures include an outer ring electrode 110 and an inner ring electrode 130. The insulating ring 120 is disposed between the outer ring electrode 110 and the inner ring electrode 130. Electrode lead-out posts 200 are respectively provided on the outer ring electrode 110 and the inner ring electrode 130. Exemplarily, the upper electrode assembly 100 includes an outer ring electrode 110 and an inner ring electrode 130 coaxially arranged from the outside to the inside. An annular insulating ring 120 is disposed between the outer ring electrode 110 and the inner ring electrode 130. The insulating ring 120 is preferably made of high-purity ceramic to achieve excellent electrical insulation performance.

[0044] In the deposition process, two independent radio frequency (RF) power supplies are used to power the inner electrode 130 and the outer electrode 110, respectively. The power values ​​applied to the two electrodes can be set and adjusted in real time. By independently controlling the RF power of the two electrodes, the electric field intensity in the corresponding area is changed, thereby adjusting the plasma density. Higher power results in greater plasma density and a faster deposition rate, achieving active control of the plasma profile. Depending on the actual deposition situation, if the edge deposition rate is slow, the power of the outer electrode 110 can be increased or the power of the inner electrode 130 can be decreased; conversely, the power ratio can be adjusted to optimize the deposition effect. Optionally, the inner electrode 130 and the outer electrode 110 are each provided with three electrode lead-out posts 200, evenly distributed along a 120° circumference, to ensure uniform transmission of RF power from the lead-out posts to the electrodes, avoiding local power concentration and ensuring uniform power transmission.

[0045] Furthermore, the edge of the insulating ring 120 protrudes beyond the outer surfaces of the outer ring electrode 110 and the inner ring electrode 130. The insulating ring 120 can be a ceramic ring, and the edge of the ceramic ring protrudes 2-3 mm above the surface of the outer ring electrode 110 or the inner ring electrode 130. In some specific embodiments, when the feed structure is installed in the reaction chamber, the insulating ring 120 faces the edge inside the reaction chamber, and its height protrudes approximately 2-3 mm above the discharge surfaces of the outer ring electrode 110 and the inner ring electrode 130. This effectively blocks the plasma sheaths generated by the two electrode zones, preventing them from interfering with each other and ensuring the stable operation of the two independent radio frequency power supplies.

[0046] To achieve independent power supply for the dual-zone electrodes, the core requirements of vacuum sealing, uniform distribution of reactant gas, and feed must be simultaneously considered. In some embodiments, the conductive sealing layer 300 includes an outer sealing ring 310 and an inner sealing ring 320. The outer sealing ring 310 corresponds to the position of the outer ring electrode 110, and the inner sealing ring 320 corresponds to the position of the inner ring electrode 130. The electrode lead-out post 200 on the outer ring electrode 110 is fixed to the outer sealing ring 310, and the electrode lead-out post 200 on the inner ring electrode 130 is fixed to the inner sealing ring 320. The conductive sealing layer 300 includes an inner sealing ring 320 corresponding to the inner ring electrode 130 and an outer sealing ring 310 corresponding to the outer ring electrode 110. The sealing rings are made of copper or other highly conductive metals; the electrode lead-out post 200 is fixedly connected to the corresponding conductive sealing ring.

[0047] In some embodiments, the conductive sealing layer 300 further includes a plurality of sealing rings 330, and sealing grooves 340 are respectively provided on the outer sealing ring 310 and the inner sealing ring 320, with the sealing rings 330 cooperating with the sealing grooves 340. Optionally, to meet the vacuum sealing requirements, a corresponding number of sealing rings 330 can be set according to the sealing pressure. For example, one sealing ring 330 is arranged on the conductive sealing ring of the inner ring electrode 130, and two sealing rings 330 are arranged on the conductive sealing ring of the outer ring electrode 110, with a sealing groove 340 adapted to the sealing ring 330 on each sealing ring. In this way, the electrode lead-out post 200 is fixed to the corresponding conductive sealing ring, forming a complete conductive path. The radio frequency power is transmitted to the partition electrode through the sealing ring and the electrode lead-out post 200. The sealing ring 330 is embedded in the sealing groove 340, which fits tightly with the relevant structure, blocking the gas exchange between the vacuum area and the atmospheric environment and maintaining the vacuum degree of the reaction chamber. The process gas enters the reaction chamber after being homogenized in the space surrounded by the sealed structure.

[0048] In some embodiments, the electrical connection layer 500 includes an outer ring electrical interface 510, an inner ring electrical interface 520, and a gas feed interface 530 spaced apart. The outer ring electrical interface 510 is electrically connected to the outer sealing ring 310 via a first conductive connector 550, the inner ring electrical interface 520 is electrically connected to the inner sealing ring 320 via a second conductive connector 560, and the gas feed interface 530 communicates with the uniform gas insulation layer 400. Further, the electrical connection layer 500 also includes a feed sealing disc 540 for compression sealing. The first conductive connector 550 and the second conductive connector 560 are both conductive rings, and the gas feed interface 530 and the conductive rings are spaced apart on the feed sealing disc 540.

[0049] Specifically, the feed sealing plate 540 is made of insulating material. The feed sealing plate is provided with a special gas feed hole, an RF connection post for the inner ring electrode 130, and an RF connection post for the outer ring electrode 110. The output end of the special gas feed interface is connected to the special gas feed hole. The RF connection post of the inner ring electrode 130 is connected to the conductive sealing ring of the inner ring electrode 130 through the electrical connection ring and conductive bolt of the inner ring electrode 130. The RF connection post of the outer ring electrode 110 is connected to the conductive sealing ring of the outer ring electrode 110 through the electrical connection ring and conductive bolt of the outer ring electrode 110. The special gas supply pipe is connected through the special gas feed interface and is connected to the internal gas equalization structure. Two independent external radio frequency power supplies are connected to the corresponding radio frequency connection posts of the inner ring electrode 130 and the outer ring electrode 110, respectively, and are transmitted to the corresponding electrodes through the electrical connection ring, conductive bolt, conductive sealing ring and lead-out post; special gas enters the internal gas equalization structure through the special gas supply pipe and feed hole, and enters the reaction chamber after multi-stage gas equalization; the sealing plate is connected to the relevant components through the fixed structure, and works with the sealing ring 330 to maintain the vacuum environment.

[0050] Therefore, integrated design can simplify the overall structure, reduce the number of parts, reduce assembly errors, and improve equipment reliability.

[0051] In some embodiments, the gas-uniform insulating layer 400 includes at least one insulating gas-uniform plate 410, which is disposed above the upper electrode assembly 100. A plurality of electrode lead-out posts 200 pass through the insulating gas-uniform plate 410 and are electrically connected to the corresponding conductive rings. A plurality of gas channels 411 are uniformly distributed along the surface of the insulating gas-uniform plate 410. The insulating gas-uniform plate 410 is made of insulating materials such as ETFE, PEEK, or ceramic, and together with the electrode structure and sealing rings, forms a gas distribution space, serving a gas-uniform function. The insulating material can block unnecessary electrical conduction between the conductive sealing layer 300 and the electrodes, and between the two sealing rings, avoiding electrical signal interference. Process gas enters through gas inlet 530, passes through the space above the gas equalization insulating layer 400, i.e. the area between the conductive sealing layer 300 and the insulating gas equalization plate 410, and diffuses to the entire surface of the insulating gas equalization plate 410 under pressure. The gas flows downward through multiple gas channels 411 evenly distributed on the plate, enters the space between the insulating gas equalization plate 410 and the upper electrode assembly 100, and finally passes through the upper electrode assembly 100 into the reaction chamber below.

[0052] In some embodiments, the gas-uniform insulating layer 400 further includes an insulating disk 420, which is disposed on the gas-uniform plate and between the inner sealing ring 320 and the outer sealing ring 310. The insulating disk 420 has a plurality of gas-uniform holes 421 along its circumference. The insulating disk 420 is disposed between two conductive sealing rings and is made of insulating material. (Reference) Figures 7 to 9Since the upper insulating disk 420 has multiple gas equalization holes 421 along the circumferential direction, and the lower insulating gas equalization plate 410 has multiple gas channels 411 evenly distributed, for example, after the process gas enters, the gas enters from the gas feed interface 530 and first reaches the space above the insulating disk 420. It flows downward through the gas equalization holes 421 on the insulating disk 420. Since the gas equalization holes 421 are arranged along the circumferential direction, the gas can only flow out from multiple points in the circumferential direction, thus first undergoing preliminary gas equalization through the gas equalization holes of the insulating disk. After passing through the gas equalization holes 421, the gas enters the space between the insulating disk 420 and the insulating gas equalization plate 410, where it further diffuses laterally. The gas then passes through the gas channels 411 evenly distributed on the insulating gas equalization plate 410, causing the process gas to be dispersed a second time. It is then further dispersed through the insulating gas equalization plate, thus evenly covering the surfaces of the two electrodes, and finally entering the reaction chamber to participate in the plasma reaction. Therefore, on the one hand, it can achieve uniform distribution of process gases, and in conjunction with the power adjustment of the dual-zone electrodes, further improve the uniformity of film thickness and refractive index to simultaneously meet the requirements of gas uniformity and electrical isolation. On the other hand, the multi-stage gas uniformity setting can adapt to process gases of different flow rates, improving the stability of gas distribution.

[0053] To further improve the uniformity of gas distribution, the gas equalization holes 421 on the insulating disk 420 and the gas channels 411 on the insulating gas equalization plate 410 are arranged in a staggered manner in the vertical direction, meaning that the positions of the equalization holes and the gas channels do not completely overlap. When the process gas flows out of the equalization holes 421, it does not directly pass through the gas channels 411 directly below, but first enters the lateral space between the insulating disk 420 and the insulating gas equalization plate 410, where it undergoes sufficient lateral diffusion and mixing, and then flows downward through the uniformly distributed gas channels 411. This staggered arrangement increases the lateral flow path of the gas, thereby further improving the uniformity of gas distribution before entering the reaction chamber and providing a consistent gas environment for the stable discharge of the dual-zone electrodes. Furthermore, the aperture of the uniform gas distribution hole 421 is larger than the aperture of the inlet of the gas channel 411. During the gas flow process, the process gas first passes through the uniform gas distribution hole 421 with a larger aperture, which facilitates the rapid passage of the gas. Subsequently, the gas diffuses and mixes laterally in the gap between the insulating disk 420 and the insulating uniform gas distribution plate 410. Finally, the gas flows out through the gas channel 411 with a smaller aperture and uniform distribution.

[0054] To improve assembly stability and sealing, the feed structure can also be equipped with an isolation structure. This isolation structure covers the exterior of the upper electrode assembly, the conductive sealing layer, the uniform gas insulation layer, and the electrical connection layer. Specifically, the isolation structure includes a fixing plate 610, a ceramic protective ring 620, and a top cover 630. The top cover 630 may also have a top sealing ring, with sealing rings arranged on its upper and lower sides. In this way, the fixing plate 610 can isolate lateral electrical interference and is fixed to the top cover 630, while also sealing the feed structure interior and the top sealing ring together on the top cover 630. The sealing rings on the upper and lower sides of the top sealing ring form a double sealing interface, further enhancing the vacuum sealing effect of the reaction chamber and preventing atmospheric components from entering the reaction chamber and interfering with the process. The lower ceramic protective ring 620 provides electrical isolation for the lower and side parts. Therefore, this multi-seal configuration can further improve the vacuum sealing of the reaction chamber, reduce the risk of vacuum leakage, and ensure the stability of the plasma reaction; on the other hand, it can avoid electrical interference with other components in the chamber and ensure the stability of the independent power supply to the dual-zone electrodes.

[0055] Since wafer edges are typically high-risk areas for defects and uniformity issues, existing solutions improve uniformity by modifying hardware or process parameters such as pressure and spacing through spray plate design. This application also provides a semiconductor processing apparatus including the feed structure described above. By dynamically adjusting the power of the inner and outer electrodes in real time to actively shape different plasma profiles, inherent non-uniformity during equipment production can be compensated. By individually reducing the power of the outer ring or changing its ratio, edge over-deposition or excessive bombardment can be effectively suppressed, significantly improving usable area and yield. Since the optimal plasma distribution may differ for different materials such as SiO, SiN, and α-Si, or for films with different thickness requirements, the dual-zone electrodes can quickly optimize the process by using different power ratio formulations, greatly expanding the versatility of a single reaction chamber. This allows a single reaction chamber to more easily adapt to various process requirements, increasing the width and flexibility of the process window. Furthermore, in-situ sensors such as optical film thickness monitors can be installed to work with the feed structure to construct a control system, monitoring the film growth thickness in real time and automatically adjusting the power of the inner and outer rings to correct deviations, achieving adaptive processing.

[0056] The preferred embodiments of the present invention have been described in detail above, but the present disclosure is not limited to the embodiments described. Those skilled in the art can make various equivalent modifications or substitutions without departing from the spirit of the present invention, and these equivalent modifications or substitutions are all included within the scope defined by the claims of the present disclosure.

Claims

1. A feed structure, characterized in that: include: The upper electrode assembly (100) includes at least two electrode structures separated by an insulating structure; Multiple electrode leads (200) are respectively connected to at least two of the electrode structures; the insulating structure is an annular insulating ring (120); the electrode structure includes an outer ring electrode (110) and an inner ring electrode (130); the insulating ring (120) is disposed between the outer ring electrode (110) and the inner ring electrode (130); and multiple electrode leads (200) are respectively disposed on the outer ring electrode (110) and the inner ring electrode (130). A conductive sealing layer (300) is fixedly connected to a plurality of electrode lead-out posts (200) for vacuum sealing; the conductive sealing layer (300) includes an outer sealing ring (310) and an inner sealing ring (320), the outer sealing ring (310) corresponds to the position of the outer ring electrode (110), the inner sealing ring (320) corresponds to the position of the inner ring electrode (130), the electrode lead-out posts (200) on the outer ring electrode (110) are fixed to the outer sealing ring (310), and the electrode lead-out posts (200) on the inner ring electrode (130) are fixed to the inner sealing ring (320); A uniform gas insulating layer (400) is disposed between the conductive sealing layer (300) and the electrode structure for uniformly distributing process gas and providing electrical isolation; An electrical connection layer (500), disposed on and connected to the conductive sealing layer (300), is used to connect an external radio frequency power supply to independently apply radio frequency power to at least two of the electrode structures.

2. The feed structure of claim 1, wherein: The edge of the insulating ring (120) protrudes from the outer surface of the outer ring electrode (110) and the inner ring electrode (130).

3. The feed structure of claim 1, wherein: The conductive sealing layer (300) also includes a plurality of sealing rings (330), and sealing grooves (340) are respectively provided on the outer sealing ring (310) and the inner sealing ring (320), and the sealing rings (330) cooperate with the sealing grooves (340).

4. The feed structure of claim 1, wherein: The electrical connection layer (500) includes an outer ring electrical interface (510), an inner ring electrical interface (520), and a gas feed interface (530) spaced apart. The outer ring electrical interface (510) is electrically connected to the outer sealing ring (310) through a first conductive connector (550). The inner ring electrical interface (520) is electrically connected to the inner sealing ring (320) through a second conductive connector (560). The gas feed interface (530) is connected to the gas-uniform insulating layer (400).

5. The feed structure according to claim 4, characterized in that: The electrical connection layer (500) also includes a feed sealing disc (540) for pressing and sealing, wherein the first conductive connector (550) and the second conductive connector (560) are both conductive rings, and the gas feed port (530) and the conductive ring are spaced apart on the feed sealing disc (540).

6. The feed structure of claim 5, wherein: The gas-uniform insulating layer (400) includes at least one insulating gas-uniform plate (410), which is disposed above the upper electrode assembly (100). A plurality of electrode lead-out posts (200) pass through the insulating gas-uniform plate (410) and are electrically connected to the corresponding conductive rings. A plurality of gas channels (411) are uniformly distributed along the surface of the insulating gas-uniform plate (410).

7. The feed structure of claim 6, wherein: The gas-uniform insulating layer (400) further includes an insulating disk (420), which is located above the insulating gas-uniform plate (410) and between the inner sealing ring (320) and the outer sealing ring (310). The insulating disk (420) has a plurality of gas-uniform holes (421) along the circumferential direction, and the gas-uniform holes (421) and the gas channel (411) are staggered.

8. A semiconductor processing apparatus, characterized by: Includes the feed structure as described in any one of claims 1-7.

Images