On-chip power beam splitter and communication device
By introducing an artificial gauge field and waveguide superlattice structure into the power beam splitter, the problems of wavelength dependence and processing accuracy were solved, achieving broadband and stable power beam splitting effect and improving the functional utilization of communication equipment.
Patent Information
- Application Number
- CN202511955665.2
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-12-23
- Publication Date
- 2026-04-07
AI Technical Summary
In existing technologies, power beam splitters face challenges in terms of wavelength dependence and processing accuracy requirements, resulting in low utilization of communication interface quantity and limited hardware design functionality.
By employing a waveguide superlattice coupling region based on an artificial gauge field, combined with input and output waveguides, and adjusting the waveguide width, spacing, and artificial gauge field structure parameters, a broadband and stable power splitting ratio is achieved.
It reduces the wavelength sensitivity of the power beam splitter, achieves broadband and stable power beam splitting effect, and has a high degree of freedom, allowing adjustment of any power beam splitting ratio.
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Figure CN121806188A_ABST
Abstract
Description
TECHNICAL FIELD
[0001] The present application relates to the technical field of optical path control, in particular to an on-chip power beam splitter and a communication device. BACKGROUND
[0002] In recent years, photonic integrated circuit technology has developed very rapidly. Based on the high refractive index difference between waveguides and cladding materials, light fields are confined in micron or even nanometer-sized waveguides, thereby forming high-density integrated on-chip optical paths. Compared with traditional fiber systems, photonic integrated systems have smaller size, lower cost and higher performance, and have become a key technology for realizing high-performance and miniaturized systems in the fields of high-speed optical communication, data center interconnection, quantum information processing and optical sensing.
[0003] In wavelength division multiplexing communication, a power beam splitter with stable performance in a large wavelength range in a broadband system such as a nonlinear multi-wavelength light source can improve the stability and reliability of the system. However, among the many structures for constructing a power beam splitter, directional couplers, multimode interferometers and other structures have a large wavelength dependence and are difficult to achieve stable power splitting in a wide band; subwavelength gratings, Y waveguides and other structures have the potential to achieve wideband stability, but they have high requirements for processing precision and are difficult to accurately achieve the specified power ratio.
[0004] The above content is only used to assist in understanding the technical solutions of the present application and does not represent the acknowledgement of the above content as prior art. SUMMARY
[0005] The main purpose of the present application is to provide an on-chip power beam splitter and a communication device, which aims to solve the technical problem that the number of device communication interfaces in the prior art has low utilization rate, resulting in limited hardware design function.
[0006] In a first aspect, the present application provides an on-chip power beam splitter, comprising: an input waveguide, an artificial norm field-based waveguide superlattice coupling region, and at least two output waveguides. The first end of the input waveguide is connected to an external light field, and the second end of the input waveguide is connected to the input end of the coupling region. The number of output ends of the coupling region is the same as the number of output waveguides, each output end of the coupling region is connected to the first end of the corresponding output waveguide, and the second end of each output waveguide is connected to an external device. The coupling region is used to distribute the input light field transmitted by the input waveguide according to a predetermined power distribution ratio to form a plurality of output light fields with different powers, and the plurality of output light fields are transmitted to an external device through the corresponding output waveguides.
[0007] Optionally, the on-chip power splitter further comprises: an input end tapered waveguide; The first end of the input end tapered waveguide is connected with the second end of the input waveguide, and the second end of the input end tapered waveguide is connected with the input end of the coupling region. The input end tapered waveguide is used for width matching the input waveguide and the coupling region, and transmitting the input optical field of the input waveguide to the width matched coupling region.
[0008] Optionally, the on-chip power splitter further comprises: at least one output end tapered waveguide; The first end of each output end tapered waveguide is connected with the corresponding output end of the coupling region, and the second end of each output end tapered waveguide is connected with the corresponding output waveguide. The output end tapered waveguide is used for width matching the output waveguide and the coupling region, and transmitting the multiple different power output optical fields of the coupling region to the corresponding output waveguides respectively.
[0009] Optionally, the first end of the input end tapered waveguide is a narrow waveguide structure, the second end of the input end tapered waveguide is a wide waveguide structure, and the width of the wide waveguide structure satisfies a single mode transmission mode, and the input optical field keeps a fundamental mode state in the input end tapered waveguide. The first end of the output end tapered waveguide is a wide waveguide structure, the second end of the output end tapered waveguide is a narrow waveguide structure, and the output optical field keeps a fundamental mode state in the output end tapered waveguide.
[0010] Optionally, the waveguide superlattice coupling region based on artificial norm field comprises: an artificial norm field structure and a waveguide superlattice structure. The artificial norm field structure is used for adjusting waveguide period, waveguide amplitude and period length of the coupling region. The waveguide superlattice structure is used for adjusting waveguide width and waveguide spacing of the coupling region.
[0011] Optionally, the artificial norm field structure comprises: a curved waveguide, and the curved waveguide comprises at least one period. The number of the periods is adjusted based on a preset power distribution ratio of the coupling region.
[0012] Optionally, the curved waveguide is a sinusoidal curved waveguide, or the curved waveguide is a circular arc type curved waveguide, or the curved waveguide is an Euler curve type curved waveguide.
[0013] Optionally, the waveguide superlattice structure comprises: a waveguide array in which wide and narrow waveguides are alternately arranged. The waveguide array is formed by periodically arranging a plurality of waveguide units with different waveguide widths and waveguide spacings.
[0014] Optionally, the on-chip power splitter is prepared based on a photonic integrated circuit platform, and materials of the photonic integrated circuit platform include silicon, silicon nitride, lithium niobate, or a III-V material.
[0015] In a second aspect, the present application provides a communication device, which comprises the on-chip power splitter as described above.
[0016] The present application provides an on-chip power splitter and a communication device. The on-chip power splitter comprises an input waveguide, a waveguide superlattice coupling region based on an artificial norm field, and at least two output waveguides. The first end of the input waveguide is connected to an external optical field, and the second end of the input waveguide is connected to the input end of the coupling region. The number of output ends of the coupling region is the same as the number of output waveguides, and each output end of the coupling region is connected to the first end of the corresponding output waveguide. The second end of each output waveguide is connected to an external device. The coupling region is used to distribute the input optical field transmitted by the input waveguide according to a preset power distribution ratio to form a plurality of output optical fields with different powers, and the output optical fields are transmitted to the external device through the corresponding output waveguides. By combining the artificial norm field and the waveguide superlattice structure, the waveguide coupling dispersion is controlled, thereby reducing the wavelength sensitivity of the power splitter and realizing a device with a wideband stable power splitting ratio. Meanwhile, the on-chip power splitter has high degrees of freedom, can adjust the power distribution of the optical field, and realizes a device design with an arbitrary power splitting ratio. BRIEF DESCRIPTION OF DRAWINGS
[0017] In order to more clearly illustrate the technical solutions in the embodiments of the present application or the prior art, the following will briefly introduce the drawings needed to be used in the embodiments or prior art description. Obviously, the drawings in the following description are only some embodiments of the present application, and for those skilled in the art, other drawings can also be obtained from the structures shown in the drawings without creative labor.
[0018] Figure 1 FIG. 1 is a structural schematic diagram of a first embodiment of the on-chip power splitter of the present application; Figure 2 FIG. 2 is a structural schematic diagram of a second embodiment of the on-chip power splitter of the present application; Figure 3 FIG. 3 is a schematic diagram of an artificial norm field structure in a third embodiment of the on-chip power splitter of the present application; Figure 4 FIG. 4 is a schematic diagram of a waveguide superlattice structure in the third embodiment of the on-chip power splitter of the present application; Figure 5 A schematic diagram of a fourth embodiment of the on-chip power splitter of the present application; Figure 6 A light field distribution simulation diagram of the fourth embodiment of the on-chip power splitter of the present application; Figure 7 An output power value diagram of the fourth embodiment of the on-chip power splitter of the present application.
[0019] Explanation of reference signs: 10, input waveguide; 20, coupling region; 30, output waveguide; 40, input end tapered waveguide; 50, output end tapered waveguide; 201, artificial normal field structure; 202, waveguide superlattice structure; 301, output Cross waveguide; 302, output Bar waveguide.
[0020] The implementation, functional features and advantages of the present application will be further described with reference to the embodiments and the accompanying drawings. DETAILED DESCRIPTION
[0021] The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, rather than all the embodiments of the present application. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative work fall within the protection scope of the present application. It should be noted that all directionality indications (such as up, down, left, right, front, back, etc.) in the embodiments of the present application are only used to explain the relative position relationship, movement condition, etc. between components in a certain posture (as shown in the drawings), and if the certain posture changes, the directionality indications also change accordingly. In addition, the description of "first", "second" and the like in the present application is only for the purpose of description, and cannot be understood as indicating or implying the relative importance of the technical features indicated or implicitly indicating the number of the indicated technical features. Therefore, the features limited by "first", "second" can explicitly or implicitly include at least one of the features. In addition, the technical solutions of each embodiment can be combined with each other, but it must be based on the realization of those skilled in the art, and when the combination of technical solutions appears contradictory or unachievable, it should be considered that the combination of technical solutions does not exist, and is not within the protection scope required by the present application.
[0022] Photonic integrated circuit technology has developed rapidly in recent years. Based on the high refractive index difference between the waveguide and the cladding material, the light field is confined in micron or even nanometer size waveguide, thus forming a high-density integrated on-chip optical circuit. Compared with traditional fiber systems, photonic integrated systems have smaller size, lower cost and higher performance, and have become a key technology for realizing high-performance, miniaturized systems in the fields of high-speed optical communication, data center interconnection, quantum information processing and optical sensing. In photonic integrated circuits, power splitter is a basic component, which can distribute the input optical signal to two or more output ports according to a certain power ratio. The precise optical power distribution capability makes the power splitter an indispensable functional component in integrated systems. In addition, power splitter can also be used to build more complex on-chip devices, such as micro resonant cavity, modulator, etc. At present, researchers have proposed and demonstrated a variety of integrated optical structures to realize the function of power splitting, such as directional coupler, multimode interferometer, subwavelength grating, Y branch waveguide, etc.
[0023] In the research of power splitter, frequency domain broadband is a widely concerned performance indicator. In wavelength division multiplexing communication, nonlinear multi-wavelength light source and other broadband systems, power splitters with stable performance in a wide wavelength range can improve the stability and reliability of the system. However, among the many structures of power splitter, directional coupler and multimode interferometer have a strong wavelength dependence and are difficult to achieve stable power splitting in a wide band; subwavelength grating and Y waveguide have the potential to achieve wideband stability, but they have high requirements for processing precision and are difficult to achieve the specified power ratio accurately. At present, researchers have proposed and used new structures such as asymmetric tapered structure, adiabatic structure, ridge structure and special topological structure to optimize the power splitter to improve its broadband performance. However, achieving wideband stability is still a difficult problem and challenge in the design of power splitter.
[0024] In integrated optoelectronic systems, artificial gauge field and waveguide superlattice are two important photonic regulation structures: artificial gauge field can construct physical effects equivalent to electromagnetic gauge field in photonic system by designing waveguide structure; while waveguide superlattice is an array structure formed by periodically arranging waveguide units with different refractive index, geometric size and coupling distance, and by accurately regulating waveguide parameters, superlattice potential field can be formed in the array. These two structure types can realize the manipulation of photonic transmission through the optimization design of waveguide parameters, so as to obtain the wavelength-insensitive light field propagation characteristics. Benefiting from the flexible regulation ability of light field, artificial gauge field and waveguide superlattice structure show significant potential in realizing high-performance, wideband stable power splitter.
[0025] This invention is based on a directional coupler-type power beam splitter, and combines artificial gauge field structure and waveguide superlattice structure for optimized design to improve device performance, thereby achieving broadband and stable power beam splitting effect. It has a lot of design freedom, such as waveguide width, waveguide spacing, artificial gauge field structure period, modulation amplitude, etc. By adjusting these structural parameters, device structure design with arbitrary power splitting ratio can be achieved.
[0026] Reference Figure 1 , Figure 1 This is a schematic diagram of the structure of the first embodiment of the on-chip power beam splitter of the present invention, based on Figure 1 An on-chip power beam splitter is proposed.
[0027] In this embodiment, the on-chip power beam splitter includes: an input waveguide 10, a waveguide superlattice coupling region 20 based on an artificial gauge field, and at least two output waveguides 30; the first end of the input waveguide 10 is connected to an external optical field (Input), and the second end of the input waveguide 10 is connected to the input end of the coupling region 20; the number of output ends of the coupling region 20 is the same as the number of output waveguides 30, each output end of the coupling region 20 is connected to the first end of the corresponding output waveguide 30, and the second end of each output waveguide 30 is connected to an external device.
[0028] It should be noted that the coupling region 20 can be used to distribute the input optical field transmitted by the input waveguide 10 according to a preset power distribution ratio to form multiple output optical fields with different powers, the same number as the output terminals, and transmit each output optical field to an external device through the corresponding output waveguide 30.
[0029] It is understandable that the input waveguide can be the optical field input unit of a power beamsplitter, used to introduce the external optical field into the beamsplitter structure. By reasonably selecting the waveguide width, the input optical mode can be controlled to be the fundamental mode, ensuring that the optical field enters the subsequent coupling region in a low-loss and stable mode. It is the basic carrier for optical field transmission in the on-chip optical path. The output waveguide can be the optical field output unit of a power beamsplitter, with the same number as the output end of the coupling region (at least two). It is used to transmit the different power output optical fields after being distributed by the coupling region to external devices, ensuring that the optical field is continuously and stably transmitted in the on-chip optical path, and together with the input waveguide, it forms the optical field transmission path. The waveguide superlattice coupling region based on the artificial gauge field can be composed of the artificial gauge field structure and the waveguide superlattice structure. By combining the artificial gauge field and the waveguide superlattice structure to optimize the coupling region of the directional coupler, the wavelength sensitivity is reduced, allowing the device to distribute the optical field to the two output waveguides with a specific power ratio over a large wavelength bandwidth, realizing a power beamsplitter with broadband stability. In addition, the on-chip power beam splitter can have two or more outputs to meet different optical field power splitting requirements.
[0030] Furthermore, the external optical field can be an incident optical signal from outside the photonic integrated circuit, such as a broadband light source or the optical field output from a front-end optical device. This is the object processed by the power beam splitter and must meet the fundamental mode transmission requirements to adapt to the transmission characteristics of the input waveguide. The input optical field can be an optical signal entering the power beam splitter through the input waveguide. It maintains its fundamental mode state during transmission, and its power is the basis for power distribution in the coupling region, requiring matching with the single-mode transmission characteristics of the input waveguide. The preset power distribution ratio can be a pre-set optical power distribution ratio based on application requirements (e.g., when there are two output ports, the power ratio of the output optical fields at the two ports is 1:10). This ratio can be flexibly set by adjusting parameters such as the waveguide width, spacing, and artificially calibrated field period in the coupling region, supporting arbitrary power distribution designs. The output optical field can be multiple optical signals formed after being distributed by the coupling region according to a preset ratio. The power of each output optical field is consistent with the preset ratio, and the number is the same as the number of output waveguides, maintaining the fundamental mode state during transmission to external devices. External devices can be subsequent functional components in photonic integrated circuits that connect to the power beam splitter, including but not limited to micro-resonant cavities, modulators, broadband optical frequency comb light sources, and other units of wavelength division multiplexing communication systems, which can receive the output light field after beam splitting and complete subsequent processing.
[0031] It should be understood that the structural parameters of the waveguide superlattice coupling region based on the artificial gauge field can be analyzed through simulation or calculation during the design process. For example, the propagation of the optical field can be simulated electromagnetically using the finite-difference time-domain method. By adjusting the geometric structural parameters of the coupling region, such as the waveguide width, waveguide spacing, artificial gauge field structure period, and modulation amplitude, the distribution of the optical field in the coupling region can be controlled, ultimately obtaining the power splitting ratio and operating bandwidth of the target power beamsplitter.
[0032] Understandably, on-chip power beam splitters can be fabricated based on photonic integrated circuit platforms. Photonic integrated circuit technology has developed very rapidly in recent years. Based on the high refractive index difference between the waveguide and the cladding material, the optical field is confined in waveguides of micrometer or even nanometer size, thus forming a high-density integrated on-chip optical path. The materials of the photonic integrated circuit platform include silicon, silicon nitride, lithium niobate, or group III-V materials.
[0033] In this embodiment, the on-chip power beamsplitter includes: an input waveguide, a waveguide superlattice coupling region based on an artificial gauge field, and at least two output waveguides. The first end of the input waveguide is connected to an external optical field, and the second end of the input waveguide is connected to the input end of the coupling region. The number of output ends of the coupling region is the same as the number of output waveguides. Each output end of the coupling region is connected to the first end of its corresponding output waveguide, and the second end of each output waveguide is connected to an external device. The coupling region is used to distribute the input optical field transmitted through the input waveguide according to a preset power distribution ratio, forming multiple output optical fields with different powers, the same number as the number of output ends. Each output optical field is then transmitted to an external device through its corresponding output waveguide. By combining an artificial gauge field with a waveguide superlattice structure, the waveguide coupling dispersion is controlled, thereby reducing the wavelength sensitivity of the power beamsplitter and achieving a device with a broadband stable power splitting ratio. Furthermore, the on-chip power beamsplitter proposed in this invention has a high degree of freedom, allowing adjustment of the optical field power distribution and enabling device designs with arbitrary power splitting ratios.
[0034] Reference Figure 2 , Figure 2 This is a schematic diagram of the structure of a second embodiment of the on-chip power beam splitter of the present invention. Based on the first embodiment of the on-chip power beam splitter described above, a second embodiment of the on-chip power beam splitter of the present invention is proposed.
[0035] In this embodiment, the on-chip power beam splitter further includes: an input tapered waveguide 40; the first end of the input tapered waveguide 40 is connected to the second end of the input waveguide 10, and the second end of the input tapered waveguide 40 is connected to the input end of the coupling region 20.
[0036] It should be noted that the input tapered waveguide 40 can be used to perform width matching between the input waveguide 10 and the coupling region 20, and to transmit the input optical field of the input waveguide 10 to the width-matched coupling region 20.
[0037] Furthermore, the on-chip power beam splitter also includes: at least one output tapered waveguide 50; the first end of each output tapered waveguide 50 is connected to the output end corresponding to the coupling region 20, and the second end of each output tapered waveguide 50 is connected to the corresponding output waveguide 30.
[0038] The output tapered waveguide 50 can be used to perform width matching between the output waveguide 30 and the coupling region 20, and to transmit multiple output optical fields of different powers of the coupling region 20 to the corresponding output waveguide 30.
[0039] It should be understood that the first end of the input tapered waveguide 40 is a narrow waveguide structure, the second end of the input tapered waveguide 40 is a wide waveguide structure, and the width of the wide waveguide structure satisfies the single-mode transmission mode. The input optical field maintains the fundamental mode state within the input tapered waveguide 40. The first end of the output tapered waveguide 50 is a wide waveguide structure, the second end of the output tapered waveguide 50 is a narrow waveguide structure, and the output optical field maintains the fundamental mode state within the output tapered waveguide 50.
[0040] Understandably, the tapered waveguide 40 at the input end, through its smooth transition structural design, eliminates the width abrupt change between the input waveguide and the coupling region, preventing optical field leakage and ensuring that the input optical field maintains its fundamental mode state throughout the gradual transition process, without mode distortion or higher-order mode excitation. This provides a stable optical field foundation for precise power allocation in the coupling region. The tapered waveguide 50 at the output end eliminates the dimensional difference between the coupling region and the output waveguide, preventing optical field leakage or mode disorder after beam splitting. This ensures that the output optical field, after beam splitting by the coupling region, maintains its fundamental mode state throughout the gradual transition process, avoiding power loss or transmission instability caused by mode distortion, and ensuring precise transmission of the optical field to external devices. The fundamental mode can be the lowest-order and most stable transmission mode of photons propagating in the waveguide. Fundamental mode transmission avoids interference between different modes, reduces wavelength dependence, and provides a guarantee for stable beam splitting over a wide bandwidth. Single-mode transmission avoids dispersion problems caused by differences in the propagation speed of different modes, ensuring that optical fields of different wavelengths propagate at a consistent speed, reducing wavelength sensitivity, and contributing to stable broadband beam splitting.
[0041] In this embodiment, the on-chip power beamsplitter further includes: an input tapered waveguide and at least one output tapered waveguide. The input tapered waveguide is used for width matching between the input waveguide and the coupling region, transmitting the input optical field of the input waveguide to the width-matched coupling region. The output tapered waveguide is used for width matching between the output waveguide and the coupling region, transmitting multiple output optical fields of different powers from the coupling region to their respective output waveguides. The first end of the input tapered waveguide is a narrow waveguide structure, and the second end of the input tapered waveguide is a wide waveguide structure, with the width of the wide waveguide structure satisfying a single-mode transmission mode. The input optical field maintains its fundamental mode state within the input tapered waveguide. Similarly, the first end of the output tapered waveguide is a wide waveguide structure, and the second end of the output tapered waveguide is a narrow waveguide structure, with the output optical field maintaining its fundamental mode state within the output tapered waveguide. By precisely controlling the optical field coupling intensity through an artificial gauge field and waveguide superlattice structure, power distribution is ensured to be achieved according to a preset ratio, avoiding beam splitting ratio deviation caused by multi-mode interference.
[0042] Reference Figure 3 and Figure 4 ,Figure 3 This is a schematic diagram of the artificial gauge field structure in the third embodiment of the on-chip power beam splitter of the present invention. Figure 4 This is a schematic diagram of the waveguide superlattice structure in the third embodiment of the on-chip power beamsplitter of the present invention. Based on the above embodiments of the on-chip power beamsplitter, a third embodiment of the on-chip power beamsplitter of the present invention is proposed.
[0043] In this embodiment, the waveguide superlattice coupling region 20 based on an artificial gauge field includes an artificial gauge field structure 201 and a waveguide superlattice structure 202. The artificial gauge field structure 201 can be used to adjust the waveguide period, waveguide amplitude, and period length of the coupling region 20; the waveguide superlattice structure 202 can be used to adjust the waveguide width and waveguide spacing of the coupling region 20.
[0044] It should be understood that the artificial gauge field structure includes a curved waveguide, which contains at least one period; the number of periods is adjusted based on a preset power distribution ratio of the coupling region. In this embodiment, the artificial gauge field structure is set to two complete sinusoidal periods, but it can also be one or more sinusoidal periods. The number of periods affects the propagation of the optical field and the actual power splitting ratio. The structural parameters of the sinusoidal curved waveguide include waveguide width, waveguide spacing, sinusoidal amplitude, period length, and number of periods. The curved waveguide can be a sinusoidal curved waveguide, a circular arc curved waveguide, or an Euler curve curved waveguide.
[0045] Furthermore, the waveguide superlattice structure includes: a waveguide array with alternating wide and narrow sections; the waveguide array is formed by periodically arranging multiple waveguide units with different waveguide widths and waveguide spacings. By alternating waveguides with different widths, broadband and stable coupling of the optical field between the waveguides can be achieved.
[0046] Reference Figure 5 , Figure 5 This is a schematic diagram of a fourth embodiment of the on-chip power beam splitter of the present invention. Based on the above embodiments of the on-chip power beam splitter, a fourth embodiment of the on-chip power beam splitter of the present invention is proposed.
[0047] In this embodiment, the on-chip power beamsplitter includes an input waveguide 10, an input tapered waveguide 40, a waveguide superlattice coupling region 20 based on an artificial gauge field, an output tapered waveguide 50, an output cross waveguide 301, and an output bar waveguide 302. The output end of the coupling region 20 is connected to the output bar waveguide 302 through the output tapered waveguide 50, and the output end of the coupling region can be directly connected to the output cross waveguide 301.
[0048] It should be noted that within the waveguide superlattice coupling region based on an artificial gauge field, the optical field is distributed in a specific power ratio between the upper and lower adjacent waveguides through inter-waveguide coupling. The optical field in the upper waveguide is output to other devices in the photonic integrated circuit via the output cross waveguide, while the optical field in the lower waveguide is first tapered at the output end, making the waveguide narrow again, and then output to other devices via the output bar waveguide. By appropriately adjusting the structural parameters of the coupling region, the distribution of the optical field can be changed, thereby obtaining a broadband power beamsplitter structure with arbitrary proportions. This application uses an example where the coupling region has two output ends for illustration.
[0049] Understandably, the waveguide width of the output Cross waveguide 301 perfectly matches the waveguide width of the coupling region, allowing the optical field to enter the Cross waveguide directly from the coupling region without width adaptation, corresponding to the low-power output end. The output Bar waveguide 302 requires a smooth transition through a tapered waveguide at the output end to avoid optical field reflection or loss, corresponding to the high-power output end.
[0050] In one possible implementation, the photonic integrated circuit platform material for the on-chip power beam splitter is silicon nitride. The structural parameters of the two waveguides in the waveguide superlattice coupling region based on the artificial gauge field are: waveguide widths of 1 μm and 1.15 μm, a waveguide spacing of 0.15 μm, a sinusoidal amplitude of 0.9 μm, and a period length of 20 μm, etc., to achieve a specific beam splitting ratio. For example... Figure 6 As shown, Figure 6 This is a simulation diagram of the optical field distribution of the fourth embodiment of the on-chip power beam splitter of the present invention.
[0051] Reference Figure 7 , Figure 7 This is a schematic diagram of the output power value of the fourth embodiment of the on-chip power beamsplitter of the present invention. The normalized power values represent the output Cross waveguide 301 and the output Bar waveguide 302. The reference is the input power. By introducing an artificial gauge field and a waveguide superlattice structure, the output Cross waveguide 301 and the output Bar waveguide 302 of the power beamsplitter achieve stable power values of 0.08 and 0.8 respectively over a wide wavelength range, with a power ratio of approximately 1:10 between the two outputs. This power beamsplitter structure operates at wavelengths from 1300 nm to 1700 nm, covering the O, C, and L bands, achieving stable power distribution and optimized broadband performance.
[0052] In this embodiment, the waveguide superlattice coupling region based on an artificial gauge field in the on-chip power beamsplitter simultaneously incorporates the characteristics of both an artificial gauge field structure and a waveguide superlattice structure. Through the synergistic effect of a sinusoidal curved waveguide and an alternating wide and narrow waveguide array, a broadband stable power beam splitting function is achieved. This structure flexibly controls the optical field coupling strength and power distribution by adjusting parameters such as the waveguide width, waveguide spacing, artificial gauge field period, and modulation amplitude of the coupling region, thereby maintaining a stable beam splitting ratio over a wide frequency range and enabling structural designs with arbitrary beam splitting ratios.
[0053] This invention also discloses a communication device, which includes the aforementioned on-chip power beam splitter. Since the communication device employs all the technical solutions of all the above embodiments, it possesses at least all the beneficial effects brought about by the technical solutions of the above embodiments, which will not be elaborated upon here.
[0054] The above description is only a preferred embodiment of the present invention and does not limit the scope of protection of the present invention. All equivalent structural transformations made under the inventive concept of the present invention using the contents of the present invention specification and drawings, or direct / indirect applications in other related technical fields, are included within the scope of protection of the present invention.
Claims
1. An on-chip power beam splitter, characterized in that, The on-chip power beam splitter includes: an input waveguide, a waveguide superlattice coupling region based on an artificial gauge field, and at least two output waveguides; The first end of the input waveguide is connected to the external optical field, and the second end of the input waveguide is connected to the input end of the coupling region; The number of output terminals of the coupling region is the same as the number of output waveguides. Each output terminal of the coupling region is connected to the first end of the corresponding output waveguide, and the second end of each output waveguide is connected to an external device. The coupling region is used to distribute the input optical field transmitted by the input waveguide according to a preset power distribution ratio, forming multiple output optical fields with different powers, the same number as the output terminals, and transmitting each output optical field to an external device through the corresponding output waveguide.
2. The on-chip power beam splitter as described in claim 1, characterized in that, The on-chip power beam splitter also includes: an input tapered waveguide; The first end of the input tapered waveguide is connected to the second end of the input waveguide, and the second end of the input tapered waveguide is connected to the input end of the coupling region; The input-end tapered waveguide is used to perform width matching between the input waveguide and the coupling region, and to transmit the input optical field of the input waveguide to the width-matched coupling region.
3. The on-chip power beam splitter as described in claim 2, characterized in that, The on-chip power beam splitter further includes: at least one output taper waveguide; The first end of each of the output terminal tapered waveguides is connected to the output terminal corresponding to the coupling region, and the second end of each of the output terminal tapered waveguides is connected to the corresponding output waveguide. The output tapered waveguide is used to perform width matching between the output waveguide and the coupling region, and to transmit multiple output optical fields of different powers in the coupling region to the corresponding output waveguides.
4. The on-chip power beam splitter as described in claim 3, characterized in that, The first end of the input tapered waveguide is a narrow waveguide structure, and the second end of the input tapered waveguide is a wide waveguide structure. The width of the wide waveguide structure satisfies the single-mode transmission mode, and the input optical field maintains the fundamental mode state within the input tapered waveguide. The first end of the output tapered waveguide is a wide waveguide structure, and the second end of the output tapered waveguide is a narrow waveguide structure. The output optical field maintains the fundamental mode state within the output tapered waveguide.
5. The on-chip power beam splitter as described in claim 1, characterized in that, The waveguide superlattice coupling region based on the artificial gauge field includes: an artificial gauge field structure and a waveguide superlattice structure; The artificial gauge field structure is used to adjust the waveguide period, waveguide amplitude, and period length of the coupling region. The waveguide superlattice structure is used to adjust the waveguide width and waveguide spacing of the coupling region.
6. The on-chip power beam splitter as described in claim 5, characterized in that, The artificial gauge field structure includes: a curved waveguide, wherein the curved waveguide contains at least one period; The number of cycles is adjusted based on a preset power allocation ratio of the coupling region.
7. The on-chip power beam splitter as described in claim 6, characterized in that, The curved waveguide is a sinusoidal curved waveguide, or the curved waveguide is a circular arc curved waveguide, or the curved waveguide is an Euler curve curved waveguide.
8. The on-chip power beam splitter as described in claim 7, characterized in that, The waveguide superlattice structure includes: a waveguide array with alternating wide and narrow bands; The waveguide array is formed by periodically arranging multiple waveguide units with different waveguide widths and waveguide spacings.
9. The on-chip power beam splitter as described in claim 8, characterized in that, The on-chip power beam splitter is fabricated based on a photonic integrated circuit platform, the materials of which include silicon, silicon nitride, lithium niobate, or group III-V materials.
10. A communication device, characterized in that, The communication device includes: an on-chip power beam splitter as described in any one of claims 1-9.