Monolithic integration manufacturing method of graphene photoelectric detector and graphene radio frequency amplifier

Abstract

The invention discloses a monolithic integration manufacturing method of a graphene photoelectric detector and a graphene radio frequency amplifier. The monolithic integration manufacturing method comprises the following steps: transferring a graphene layer on the surface of a substrate; processing the graphene layer into a channel of a graphene photoelectric detector and a channel of a graphene amplifier; preparing a source electrode and a drain electrode of a graphene photoelectric detector and a source electrode and a drain electrode of a graphene radio frequency amplifier, wherein the source electrode of the graphene photoelectric detector is connected with the source electrode of the graphene radio frequency amplifier; depositing a medium on the surface of a graphene channel of the graphene radio frequency amplifier; and preparing a gate electrode above the medium of the graphene radio frequency amplifier, wherein the gate electrode of the graphene radio frequency amplifier is connected with the drain electrode of the graphene photoelectric detector. The problems of process compatibility, miniaturization, integration loss and the like confronted by heterogeneous integration of different material systems can be avoided, the difficulty of a monolithic integration manufacturing process is greatly reduced, and the advantages of high speed and low power consumption of graphene are exerted; and a trans-impedance amplifier is not needed, the circuit structure is simplified, the integration level and the signal-to-noise ratio are improved, and an efficient solution is provided for realizing monolithic photoelectric integration.

Description

Technical Field

[0001] This invention belongs to the field of semiconductor technology, and in particular to a monolithic integrated manufacturing method for a graphene photodetector and a graphene radio frequency amplifier. Background Technology

[0002] The Internet of Things (IoT) and big data communications applications urgently require high-speed, high-bandwidth, high-capacity, and miniaturized communication networks. Optoelectronic integration technology possesses the potential advantages of high speed, high integration, and low power consumption, easily solving communication problems with bandwidths exceeding 100 GHz, and is an important development direction for future information electronics. However, silicon-based optoelectronic devices are limited by material mobility, making high speed difficult to achieve. Currently, different types of high-speed optoelectronic devices require different material systems, and optoelectronic integration is mainly achieved by independently packaging different devices and then connecting them. For example, the output current signal of a conventional photodetector (such as a PIN diode) needs to be converted into a voltage signal by a transimpedance amplifier, and then further amplified by an RF amplifier. Therefore, a combination of three discrete devices—a photodetector of different compounds, a transimpedance amplifier, and an RF amplifier—is required. This approach not only makes it difficult to reduce the size but also limits the realization of high-speed performance.

[0003] For multiple material systems, only heterogeneous integration schemes can achieve integrated manufacturing, but process compatibility, miniaturization, and integration losses pose significant challenges. Graphene, with its extremely high mobility and saturation velocity, is an ideal material for fabricating high-speed photodetectors and high-speed RF amplifiers. Furthermore, it possesses novel energy conversion methods such as photothermoelectric effects; for example, directly converting optical signals into voltage signals for input to an RF amplifier via a photodetector can eliminate the need for a transimpedance amplifier, improving integration density and circuit performance. Therefore, it holds promise for monolithic integrated manufacturing of photodetectors and RF amplifiers based on graphene as a single system, obtaining a complete functional unit for converting optical signals to electrical signals on a single chip. This leverages the advantages of high speed, high integration density, and low power consumption, driving a leapfrog development in optoelectronic integration technology. Summary of the Invention

[0004] The purpose of this invention is to provide a monolithic integrated manufacturing method for graphene photodetectors and graphene radio frequency amplifiers, which avoids the challenges of process compatibility, miniaturization, and integration loss faced by heterogeneous integration of different material systems, greatly reduces process difficulty, and leverages the advantages of high speed, high integration, and low power consumption, providing an efficient solution for achieving monolithic optoelectronic integration.

[0005] The technical solution to achieve the objective of this invention is: a method for monolithic integrated manufacturing of a graphene photodetector and a graphene radio frequency amplifier, the method comprising the following steps:

[0006] Step 1: Transfer a graphene layer onto the substrate surface;

[0007] Step 2: The graphene layer is processed into the channel of the graphene photodetector and the channel of the graphene radio frequency amplifier.

[0008] Step 3: Prepare the source electrode and drain electrode of the graphene photodetector, as well as the source electrode and drain electrode of the graphene radio frequency amplifier, wherein the source electrode of the graphene photodetector is connected to the source electrode of the graphene radio frequency amplifier.

[0009] Step 4: Deposit dielectric material on the surface of the graphene channel of the graphene RF amplifier.

[0010] Step 5: Prepare a gate electrode on top of the dielectric of the graphene RF amplifier, and connect the gate electrode of the graphene RF amplifier to the drain electrode of the graphene photodetector.

[0011] Furthermore, the graphene photodetector and the graphene radio frequency amplifier are integrated and manufactured on a single wafer.

[0012] Furthermore, the fabrication of the channel of the graphene photodetector and the fabrication of the channel of the graphene radio frequency amplifier are carried out simultaneously; the fabrication of one or more of the source electrode and drain electrode of the graphene photodetector and the fabrication of the source electrode and drain electrode of the graphene radio frequency amplifier are carried out simultaneously.

[0013] Furthermore, the output signal of the drain electrode of the graphene photodetector is the input signal of the gate electrode of the graphene radio frequency amplifier.

[0014] Furthermore, the graphene photodetector can operate without the application of an external voltage, directly outputting a voltage signal from the drain electrode.

[0015] Furthermore, the input light of the graphene photodetector is modulated light loaded with a radio frequency signal, with a wavelength in the range of 300nm-2000nm, and the light incident mode is vertical plane incident or optical waveguide coupling.

[0016] Furthermore, the graphene photodetector may have 0, 1, or more gate electrodes, which are fabricated simultaneously with the gate electrodes of the graphene radio frequency amplifier.

[0017] Furthermore, the graphene layer is a single-layer graphene material, a double-layer graphene material, or a multi-layer graphene material.

[0018] Furthermore, the output signal frequency of the graphene radio frequency amplifier is in the range of 0GHz-100GHz, and the intensity is in the range of -70dBm-20dBm.

[0019] Furthermore, the graphene radio frequency amplifier has one or more stages.

[0020] Compared with the prior art, the significant advantages of this invention are:

[0021] (1) The monolithic integrated manufacturing method of graphene photodetectors and graphene radio frequency amplifiers proposed in this invention can fully leverage the advantages of graphene's extremely high mobility and saturation velocity. Based on graphene as a single system, the integrated manufacturing of photodetectors and radio frequency amplifiers can be achieved, directly obtaining a complete functional unit for converting optical signals to electrical signals on a single chip, achieving unprecedented high integration and high operating bandwidth. Compared with the heterogeneous integration scheme of photodetectors and radio frequency amplifiers with different material systems, it can overcome the manufacturing difficulties such as high process difficulty and performance degradation caused by the process compatibility of different material systems, greatly reducing process difficulty, leveraging the advantages of high speed, high integration, and low power consumption, and promoting the leapfrog development of optoelectronic integration technology.

[0022] (2) Based on the monolithic integrated manufacturing method of graphene photodetector and graphene RF amplifier proposed in this invention, the graphene photothermoelectric effect can spontaneously generate a photogenerated voltage difference on both sides of the graphene channel without the need for external power supply, thus achieving self-powered operation. At the same time, since the voltage signal is directly generated, it can be directly used to drive the subsequent RF amplifier. Therefore, the transimpedance amplifier is no longer needed to convert the output current signal to a voltage signal, thus avoiding the design bottleneck of stability and bandwidth trade-off faced by traditional transimpedance amplifiers. This significantly improves the signal-to-noise ratio, simplifies the circuit structure, and enhances the integration, providing an efficient solution for achieving monolithic optoelectronic integration.

[0023] The present invention will now be described in further detail with reference to the accompanying drawings. Attached Figure Description

[0024] Figure 1 This is a flowchart of a monolithic integrated manufacturing method for a graphene photodetector and a graphene radio frequency amplifier in one embodiment.

[0025] Figure 2 This is a schematic diagram of a graphene photodetector and graphene radio frequency amplifier structure with vertical incident light in one embodiment, wherein... Figure 2 (a) in the image is a side view. Figure 2 (b) is the top view.

[0026] Figure 3 This is a schematic diagram of a silicon waveguide integrated graphene photodetector and graphene RF amplifier structure in one embodiment, wherein... Figure 3 (a) in the image is a side view. Figure 3 (b) is the top view. Detailed Implementation

[0027] To make the objectives, technical solutions, and advantages of this application clearer, the following detailed description is provided in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative and not intended to limit the scope of this application.

[0028] It should be noted that if the embodiments of the present invention involve directional indicators (such as up, down, left, right, front, back, etc.), the directional indicators are only used to explain the relative positional relationship and movement of the components in a certain specific posture (as shown in the figure). If the specific posture changes, the directional indicators will also change accordingly.

[0029] In one embodiment, combined Figure 1 A method for monolithically integrating a graphene photodetector and a graphene radio frequency amplifier is provided, the method comprising the following steps:

[0030] S1, Transfer graphene layer 20 on the surface of substrate 10;

[0031] S2, the graphene layer 20 is processed into the channel 21 of the graphene photodetector and the channel 22 of the graphene radio frequency amplifier.

[0032] S3, prepare the source electrode 31 and drain electrode 32 of the graphene photodetector, and the source electrode 33 and drain electrode 34 of the graphene radio frequency amplifier, wherein the source electrode 31 of the graphene photodetector is connected to the source electrode 33 of the graphene radio frequency amplifier.

[0033] S4, deposit dielectric 40 on the surface of graphene channel 22 of graphene RF amplifier;

[0034] S5, a gate electrode 51 is fabricated above the dielectric 40 of the graphene RF amplifier, and the gate electrode 51 of the graphene RF amplifier is connected to the drain electrode 32 of the graphene photodetector.

[0035] Preferably, in some embodiments, the fabrication of the channel 21 of the graphene photodetector and the fabrication of the channel 22 of the graphene radio frequency amplifier are carried out simultaneously.

[0036] The solution in this embodiment can effectively avoid damage to the graphene channels caused by repeated processing.

[0037] Preferably, in some embodiments, the fabrication of one or more of the source electrode 31 and drain electrode 32 of the graphene photodetector is carried out simultaneously with the fabrication of the source electrode 33 and drain electrode 34 of the graphene radio frequency amplifier.

[0038] The solution in this embodiment can effectively reduce the number of process steps while maintaining the excellent performance of the graphene channel.

[0039] Preferably, in some embodiments, the graphene photodetector and the graphene radio frequency amplifier are integrated and manufactured on a single wafer.

[0040] Here, based on graphene as a single system, it is possible to integrate photodetectors and radio frequency amplifiers, and obtain a complete functional unit for converting optical signals to electrical signals directly on a single chip.

[0041] Preferably, in some embodiments, the output signal of the graphene photodetector is output from the drain electrode 32 of the graphene photodetector, and the input signal of the graphene radio frequency amplifier is input from the gate electrode 51 of the graphene radio frequency amplifier.

[0042] Preferably, in some embodiments, the graphene photodetector can operate without the application of an external voltage, and the voltage signal is directly output from the drain electrode 32.

[0043] Here, by creating a chemical potential difference within the graphene channel, significant photothermal and electroelectric effects can be achieved. This allows for the spontaneous generation of a photogenerated voltage difference across the graphene channel without the need for an external power source, achieving self-powering and near-zero power consumption. Furthermore, since a voltage signal is directly generated, it can be directly used to drive subsequent RF amplifiers, eliminating the need for a transimpedance amplifier to convert the output current signal to a voltage signal. Transimpedance amplifiers typically face stability and compensation challenges, and their introduction complicates noise issues and limits bandwidth and dynamic range. This solution circumvents the design bottleneck of balancing stability and bandwidth faced by traditional transimpedance amplifiers, while significantly improving the signal-to-noise ratio and simplifying the circuit structure to increase integration, providing a highly efficient solution for achieving monolithic optoelectronic integration.

[0044] Preferably, in some embodiments, the input light of the graphene photodetector is modulated light loaded with a radio frequency (RF) signal. The graphene photodetector can convert the modulated light loaded with the RF signal into an RF electrical signal, which is directly output to an RF amplifier. After being amplified by the RF amplifier, the RF electrical signal is output from the drain electrode of the RF amplifier through a blocking capacitor.

[0045] Preferably, the wavelength of the light is in the range of 300nm-2000nm. Due to its unique Dirac cone band structure, graphene has a response covering a very large spectral range of 300-2000nm, thus providing a large selection space for the input light wavelength.

[0046] Preferably, the light incident mode of the graphene photodetector is vertical plane incident or optical waveguide coupling. Due to its two-dimensional van der Waals properties, graphene is easy to integrate onto various substrate surfaces, thus offering a wide range of choices for the light incident mode, such as the common vertical plane incident, and directly integrating graphene onto the optical waveguide to achieve stronger optical coupling.

[0047] Preferably, in some embodiments, the graphene photodetector may have 0, 1, or more gate electrodes 52, which are fabricated simultaneously with the gate electrode 51 of the graphene radio frequency amplifier. For example... Figure 3 As shown, the two gate electrodes 52 and 53 of the graphene photodetector and the gate electrode 51 of the graphene RF amplifier are fabricated simultaneously, which greatly reduces the difficulty of the process and improves compatibility.

[0048] Preferably, in some embodiments, the graphene layer 20 is a single-layer graphene material, a double-layer graphene material, or a multi-layer graphene material. Here, when the graphene layer is a double-layer or multi-layer graphene, light absorption can be enhanced, and the output signal strength can be improved.

[0049] Preferably, in some embodiments, the output signal frequency of the graphene RF amplifier is in the range of 0 GHz to 100 GHz, and the intensity is in the range of -70 dBm to 20 dBm. The high mobility and high saturation velocity of graphene enable both the photodetector and the amplifier to operate at bandwidths exceeding 100 GHz, offering significant advantages over traditional systems. Regarding output signal intensity, due to zero-bias operation and the omission of the transimpedance amplifier, the low noise floor allows the final output signal to have a very wide dynamic range.

[0050] Preferably, in some embodiments, the graphene RF amplifier has one or more stages. Due to the flexibility of graphene RF amplifier design, it can be amplified in one or more stages according to subsequent output requirements.

[0051] The above-described monolithic integrated manufacturing method for graphene photodetectors and graphene RF amplifiers can avoid the challenges of process compatibility, miniaturization, and integration loss encountered in heterogeneous integration of different material systems, greatly reducing process difficulty and leveraging the advantages of high speed, high integration, and low power consumption, thus providing an efficient solution for achieving monolithic optoelectronic integration.

[0052] The present invention will be further described below through several embodiments.

[0053] Example 1

[0054] This embodiment describes a monolithic integrated fabrication method for a graphene photodetector and a graphene radio frequency amplifier with vertical incident light. The schematic side and top views of the structure are shown below. Figure 2As shown in the figure, 10 represents the silicon carbide substrate, 21 represents the channel of the graphene photodetector, 22 represents the channel of the graphene RF amplifier, 31 represents the Pd / Au source electrode of the graphene photodetector, 32 represents the Ti / Au drain electrode of the graphene photodetector, 33 represents the Pd / Au source electrode of the graphene RF amplifier, 34 represents the Pd / Au drain electrode of the graphene RF amplifier, 40 represents the Al2O3 dielectric, and 51 represents the Ti / Au gate electrode of the graphene RF amplifier. The specific manufacturing steps are as follows:

[0055] Step a1: Transfer a single layer of graphene onto the surface of a silicon carbide substrate.

[0056] Step a2 involves etching the graphene layer with a reactive ion beam to create channels for a graphene photodetector and a graphene radio frequency amplifier for vertical incident light.

[0057] Step a3 involves simultaneously fabricating the source electrode of a graphene photodetector, as well as the source and drain electrodes of a graphene radio frequency amplifier. The electrode materials, from bottom to top, are 10 nm Pd and 50 nm Au, respectively. The source electrode of the graphene photodetector is connected to the source electrode of the graphene radio frequency amplifier. The drain electrode of the graphene photodetector is then fabricated, with the electrode materials, from bottom to top, being 10 nm Ti and 50 nm Au. The work function of the drain electrode of the graphene photodetector is significantly lower than that of the source electrode, thereby generating a chemical potential difference in the graphene channel and enhancing the photothermal-electric effect.

[0058] Step a4: Deposit 30 nm of Al2O3 as a gate dielectric on the surface of the graphene channel of the graphene RF amplifier.

[0059] Step a5: A gate electrode is fabricated above the Al2O3 gate dielectric of the graphene RF amplifier. The electrode materials, from bottom to top, are 10nm Ti and 100nm Au. At the location of the drain electrode of the graphene photodetector, a dielectric aperture is created by reactive ion beam etching. The drain electrode of the graphene photodetector is then connected to the gate electrode of the graphene RF amplifier using 10nm Ti and 200nm Au metals. This results in a monolithically integrated graphene photodetector and graphene RF amplifier on a silicon carbide substrate, occupying an area with a side length on the order of hundreds of micrometers.

[0060] When light with wavelengths in the 300-2000 nm range is incident perpendicularly on the channel region of a graphene photodetector, a potential difference is spontaneously generated between the drain and source terminals without an applied external voltage. The output voltage signal from the drain of the graphene photodetector is input to the gate electrode of a graphene radio frequency amplifier via a connected metal electrode, and the output voltage of the drain of the graphene radio frequency amplifier changes according to the input voltage at the gate electrode. When the input light is modulated light loaded with a radio frequency signal, the output voltage signal from the drain of the graphene photodetector is input to the gate electrode of the graphene radio frequency amplifier via a connected metal electrode, and the drain of the graphene radio frequency amplifier will output a radio frequency signal of the same frequency. The operating bandwidth of the graphene photodetector can reach over 100 GHz, and the operating frequency of the graphene RF amplifier can reach over 100 GHz. Therefore, when the frequency of the input modulated light loaded with the RF signal is in the range of 0-100 GHz, both the graphene photodetector and the graphene RF amplifier can work normally. Thanks to the zero bias operation and the omission of the transimpedance amplifier, the output signal has a very large dynamic range and the intensity can be as low as -70 dBm.

[0061] Example 2

[0062] This embodiment describes a monolithic integrated fabrication method for a silicon waveguide-integrated graphene photodetector and a graphene RF amplifier. The schematic side and top views of the structure are shown below. Figure 3 As shown in the figure, 10 represents the SOI substrate, 11 represents the 220nm thick silicon waveguide, 21 represents the channel of the silicon waveguide integrated graphene photodetector, 22 represents the channel of the graphene RF amplifier, 31 represents the Pd / Au source electrode of the graphene photodetector, 32 represents the Pd / Au drain electrode of the graphene photodetector, 33 represents the Pd / Au source electrode of the graphene RF amplifier, 34 represents the Pd / Au drain electrode of the graphene RF amplifier, 40 represents the HfO2 dielectric, 51 represents the Ti / Au gate electrode of the graphene RF amplifier, and 52 and 53 represent the two Ti / Au localized gate electrodes of the graphene photodetector. The specific manufacturing steps are as follows:

[0063] Step b1: Transfer bilayer graphene onto the surface of an SOI substrate with a 220 nm thick silicon waveguide.

[0064] Step b2: By aligning the markings, the graphene layer is etched into the channel of the graphene photodetector and the channel of the graphene radio frequency amplifier directly above the waveguide using low-energy oxygen plasma.

[0065] Step b3 involves simultaneously fabricating the source and drain electrodes of a graphene photodetector, as well as the source and drain electrodes of a graphene radio frequency amplifier. The electrode materials, from bottom to top, are 10nm Pd and 50nm Au, respectively. The source electrode of the graphene photodetector is connected to the source electrode of the graphene radio frequency amplifier.

[0066] Step b4: Simultaneously deposit 30 nm of HfO2 as a gate dielectric on the graphene channel surface of the graphene RF amplifier and photodetector.

[0067] Step b5 involves simultaneously fabricating two localized gate electrodes for a graphene photodetector and the gate electrode for a graphene RF amplifier above the HfO2 gate dielectric. The electrode materials, from bottom to top, are 10 nm Ti and 100 nm Au. The two localized gate electrodes distributed on both sides of the silicon waveguide effectively modulate the chemical potential difference in the graphene photodetector channel, thereby achieving the optimal operating point and obtaining a highly significant photothermal-electric effect. At the drain electrode location of the graphene photodetector, a dielectric aperture is created by reactive ion beam etching, and the drain electrode of the graphene photodetector is connected to the gate electrode of the graphene RF amplifier using 10 nm Ti and 200 nm Au metals.

[0068] When 1550nm infrared light is transmitted through a silicon waveguide to the channel region of a graphene photodetector, a potential difference is spontaneously generated between the drain and source terminals based on the chemical potential difference between the two local gate modulation regions, without the application of an external voltage. When the input light is modulated light loaded with a radio frequency signal, the output voltage signal at the drain of the graphene photodetector is input to the gate electrode of the graphene radio frequency amplifier via a connected metal electrode, and finally outputs a radio frequency signal of the same frequency at the drain of the graphene radio frequency amplifier. The operating bandwidth of waveguide-integrated graphene photodetectors can reach over 100 GHz, and the operating frequency of graphene RF amplifiers can also reach over 100 GHz. Therefore, when the frequency of the input modulated light-loaded RF signal is in the range of 0-100 GHz, both the graphene photodetector and the graphene RF amplifier can work normally. Thanks to the strong coupling of the light incident method of waveguide integration and the fine control of chemical potential differences, the output voltage amplitude of the graphene photodetector can approach 1V (which has reached or even exceeded the output voltage value of the conventional photodetector's output current signal after conversion by the transimpedance amplifier). After further amplification, the output RF signal strength can reach up to 20 dBm.

[0069] In summary, the monolithic integrated manufacturing method for graphene photodetectors and graphene RF amplifiers of this invention fully leverages the advantages of graphene's extremely high mobility and saturation velocity. Based on graphene as a single system, it achieves the integrated manufacturing of photodetectors and RF amplifiers, directly obtaining a complete functional unit for converting optical signals to electrical signals on a single chip, achieving high integration and high operating bandwidth. Simultaneously, through the photothermal and electroelectric effects of graphene, a photogenerated voltage difference can be spontaneously generated across the graphene channel without external power supply, achieving self-powered operation and directly driving the subsequent RF amplifier. This eliminates the need for a transimpedance amplifier, thus avoiding the design bottleneck of balancing stability and bandwidth, significantly improving the signal-to-noise ratio, and simplifying the circuit structure to enhance integration. This provides an efficient solution for achieving monolithic optoelectronic integration. Compared with heterogeneous integration of photodetectors and RF amplifiers using different material systems, this method overcomes the manufacturing difficulties caused by the incompatibility of different material systems, such as high process difficulty and performance degradation, greatly reducing process complexity, leveraging the advantages of high speed, high integration, and low power consumption, and promoting the leapfrog development of optoelectronic integration technology.

[0070] The foregoing has shown and described the basic principles, main features, and advantages of the present invention. Those skilled in the art should understand that the present invention is not limited to the above embodiments. The embodiments and descriptions in the specification are merely illustrative of the principles of the invention. Any modifications, equivalent substitutions, or improvements made within the spirit and principles of the present invention without departing from its spirit and scope should be included within the protection scope of the present invention.

Claims

1. A method for monolithic integration of a graphene photodetector and a graphene radio frequency amplifier, characterized in that, The method includes the following steps: Step 1: Transfer a graphene layer (20) onto the surface of a substrate (10). Step 2: The graphene layer (20) is processed into the channel (21) of the graphene photodetector and the channel (22) of the graphene radio frequency amplifier. Step 3: Prepare the source electrode (31) and drain electrode (32) of the graphene photodetector, and the source electrode (33) and drain electrode (34) of the graphene radio frequency amplifier, wherein the source electrode (31) of the graphene photodetector is connected to the source electrode (33) of the graphene radio frequency amplifier. Step 4: Deposit dielectric (40) on the surface of the graphene channel (22) of the graphene RF amplifier. Step 5: A gate electrode (51) is fabricated on the dielectric (40) of the graphene RF amplifier, and the gate electrode (51) of the graphene RF amplifier is connected to the drain electrode (32) of the graphene photodetector.

2. The monolithic integrated manufacturing method of graphene photodetector and graphene RF amplifier according to claim 1, characterized in that, The graphene photodetector and graphene radio frequency amplifier are integrated and manufactured on a single wafer.

3. The monolithic integrated manufacturing method of graphene photodetector and graphene radio frequency amplifier according to claim 1, characterized in that, The fabrication of the channel (21) of the graphene photodetector and the fabrication of the channel (22) of the graphene radio frequency amplifier are carried out simultaneously; the fabrication of one or more of the source electrode (31) and drain electrode (32) of the graphene photodetector and the fabrication of the source electrode (33) and drain electrode (34) of the graphene radio frequency amplifier are carried out simultaneously.

4. The monolithic integrated manufacturing method of graphene photodetector and graphene RF amplifier according to claim 1, characterized in that, The output signal of the drain electrode (32) of the graphene photodetector is the input signal of the gate electrode (51) of the graphene radio frequency amplifier.

5. The monolithic integrated manufacturing method of graphene photodetector and graphene RF amplifier according to claim 1, characterized in that, The graphene photodetector can operate without the application of an external voltage, and outputs a voltage signal directly from the drain electrode (32).

6. The monolithic integrated manufacturing method of graphene photodetector and graphene radio frequency amplifier according to claim 1, characterized in that, The input light of the graphene photodetector is modulated light loaded with radio frequency signals, with a wavelength in the range of 300nm-2000nm, and the light incident method is vertical plane incident or optical waveguide coupling.

7. The monolithic integrated manufacturing method of graphene photodetector and graphene radio frequency amplifier according to claim 1, characterized in that, The graphene photodetector may have 0, 1 or more gate electrodes (52), which are fabricated simultaneously with the gate electrode (51) of the graphene radio frequency amplifier.

8. The monolithic integrated manufacturing method of graphene photodetector and graphene RF amplifier according to claim 1, characterized in that, The graphene layer (20) is a single-layer graphene material, a double-layer graphene material, or a multi-layer graphene material.

9. The monolithic integrated manufacturing method of graphene photodetector and graphene radio frequency amplifier according to claim 1, characterized in that, The output signal frequency of the graphene radio frequency amplifier is in the range of 0 GHz to 100 GHz, and the intensity is in the range of -70 dBm to 20 dBm.

10. The monolithic integrated manufacturing method of graphene photodetector and graphene radio frequency amplifier according to claim 1, characterized in that, The graphene radio frequency amplifier has one or more stages.

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