Micro light emitting diode, micro light emitting diode device, display and method thereof

Abstract

The invention relates to various aspects of a [mu]-LED or a [mu]-LED arrangement for augmented reality or light applications, in particular in the automotive field. The [mu]-LEDs are characterized by particularly small dimensions in the range of several [mu] m.

Description

[0001] This invention is a divisional application of the parent application, which is filed on January 29, 2020, with application number 202080023800.9 and invention title "Miniature Light Emitting Diode, Miniature Light Emitting Diode Device, Display and Method Thereof" (PCT International Application PCT / EP2020 / 052191 entered the Chinese National Phase).

[0002] This patent application claims priority to the following German patent applications: DE 10 2019 201114.4, dated January 29, 2019; DE 10 2019 111 766.6, dated May 7, 2019; DE 10 2019 112 124.8, dated May 9, 2019; DE 10 2019 116 313.7, dated June 14, 2019; DE 10 2019 131 506.9, dated November 21, 2019; DE 10 2019 118 251.4, dated July 5, 2019; DE 10 2019 118 082.1, dated July 4, 2019; and DE 10 2019, dated March 29, 2019. 108 260.9, DE 10 2019 on September 20, 2019 125 349.7, DE 10 2019 on May 13, 2019 112 490.5, DE 10 2019 on May 14, 2019 112 604.5, DE 10 2019 on May 14, 2019 112 609.6, DE 10 2019 on January 31, 2019 102 509.5, DE 10 2019 on June 7, 2019 115 479.0, DE 10 2019 on May 14, 2019 112 616.9, DE 10 2019 on May 23, 2019 113791.8, DE 10 2019 110 499.8 on April 23, 2019, DE 10 2019 110523.4 on April 23, 2019, DE 10 2019 130 934.4 on November 15, 2019, DE 10 2019 114321.7 on May 28, 2019, DE 10 2019 127 425.7 on October 11, 2019, DE 10 2019 112639.8 on May 14, 2019, DE 10 2019 112 605.3 on May 22, 2019 113636.9, DE 10 2019 103 365.9 on February 11, 2019, DE 10 2019 116312.9 on June 14, 2019, DE 10 2019 115 991.1 on June 12, 2019, DE 10 2019 125875.8 on September 25, 2019, DE 10 2019 127 424.9 on October 11, 2019, DE 10 2019 118085.6 on July 4, 2019, DE 10 2019 125 336 on September 20, 2019.5. DE 10 2019 113793.4 on May 23, 2019; DE 10 2019 110 500.5 on April 23, 2019; DE 10 2019 111 767.4 on May 7, 2019; DE 10 2019 121 672.9 on August 12, 2019; DE 10 2019 118 084.8 on July 4, 2019; DE 10 2019 113 768.3 on May 23, 2019; DE 10 2019 113 792.6 on May 23, 2019; DE 10 2019 110 on April 23, 2019. 497.1, DE 10 2019 114 442.6 dated May 29, 2019, DE 10 2019 129 209.3 dated October 29, 2019, DE 10 2019 130 821.6 dated November 14, 2019, and DE10 2019 130 866.6 dated November 15, 2019, the disclosures of which are incorporated herein by reference, and also claim Danish patent applications DK PA201970059, DK PA201970060, and DK, dated January 29, 2019. The patent claims priority to PA201970061, the disclosure of which is incorporated herein by reference, and also to U.S. patent application US 62 / 937,552, dated November 19, 2019, the disclosure of which is incorporated herein by reference. Technical Field

[0003] This invention relates to miniature light-emitting diodes, miniature light-emitting diode devices, and displays. Background Technology

[0004] The ongoing developments in the Internet of Things (IoT) and communications fields have opened doors to a variety of new applications and designs. These designs and applications offer greater effectiveness and efficiency for development, service, and manufacturing purposes.

[0005] One aspect of the new design involves augmented reality, or virtual reality. The general definition of “augmented reality” is: “an interactive experience of a real environment in which objects in the real world are extended by computer-generated perceptible information.”

[0006] Information is primarily conveyed through visualization, but not limited to visual perception. Sometimes, tactile or other sensory perceptions can be used to augment reality. In the case of visualization, the overlaid sensory visual information can be constructive—that is, supplementing the natural environment—or non-constructive, such as by covering a portion of the natural environment. In some applications, interaction with the overlaid sensory information may also occur in one or another manner. Thus, augmented reality enhances the user's continuous perception of the real environment.

[0007] In contrast, "virtual reality" replaces the user's real environment with a completely simulated one. In other words, while users can perceive the real world at least partially in an augmented reality environment, the environment in virtual reality is completely simulated and may differ significantly from reality.

[0008] Augmented reality (AR) can be used to improve natural environmental conditions, thereby enriching the user experience or supporting them in performing certain tasks. For example, users can use displays with AR capabilities to assist them in performing certain tasks. By overlaying information about real objects to provide clues to the user, it provides additional information, enabling them to act faster, safer, and more efficiently during manufacturing, repair tasks, or other services. In the medical field, AR technology can be used to guide and support doctors in diagnosing and treating patients. In development, engineers can directly experience their test results, making it easier to evaluate the outcomes. In the tourism or events industry, AR can provide users with additional information about attractions, history, and more. AR can also support learning activities or tasks. Summary of the Invention

[0009] The following introduction illustrates various aspects of μ (micro) displays in automotive and augmented reality applications. These aspects include devices, displays, controls, process techniques, and other suitable features for augmented reality and automotive applications. This includes aspects designed to generate light through indicators, displays, etc. Additionally, aspects of control circuitry, power supplies, and optical coupling outputs, light guiding, and light focusing are listed, along with applications of such devices, explained using various examples.

[0010] Because of the various limitations and challenges posed by the small size of the light-generating components, combining various aspects is not only advantageous but often necessary. For ease of handling, this disclosure is divided into several parts with similar topics. However, it should not be explicitly understood that features of one topic cannot be combined with other topics. Rather, aspects from different subject areas must be combined to create displays for augmented reality or other applications or in the automotive field.

[0011] To consider the following solutions, some terms and expressions should be explained to define common and shared understanding. For clarity, the listed terms are generally used herein. However, in individual cases, they may deviate from the intended interpretation, where such deviation is identifiable.

[0012] "Active Matrix Display"

[0013] The term "active matrix display" originally referred to liquid crystal screens containing a matrix of thin-film transistors controlled by LCD (liquid crystal display) pixels. Each individual pixel has a circuit with active components (mainly transistors) and power connections. However, this technology should not be limited to liquid crystals at present, but should specifically refer to the control of μ-LEDs (micro-light-emitting diodes) or μ displays.

[0014] "Active Matrix Carrier Substrate"

[0015] An "active matrix carrier substrate" or "active matrix backplane" refers to the driving device for the light-emitting diodes (LEDs) of a display with thin-film transistor (TFT) circuitry. Here, these circuits can be integrated into or applied to the backplane. The "active matrix carrier substrate" has one or more interface contacts that form an electrical connection with the μ-LED display structure. Therefore, the "active matrix carrier substrate" can be part of or carry an active matrix display.

[0016] "Active layer"

[0017] An active layer is a layer in an optoelectronic device or light-emitting diode (LED) where charge carriers recombine. In its simplest form, an active layer is characterized by regions of two adjacent semiconductor layers with different conductivity types. More complex active layers include quantum wells (see related description), multiple quantum wells, or other structures with additional properties. Structural and material systems can also be used to define the band gap in the active layer (see related description), which defines the wavelength and thus the color of light.

[0018] "Alvarez Lens Device"

[0019] The optical path of the video glasses can be adjusted by using Alvarez lens pairs. The adjustment optics include Alvarez lens devices, particularly rotatable variants with moiré lens devices. Here, beam deflection is determined by the first derivative of the individual phase plate morphologies, approximately z = ax² + by² + cx + dy + e for the radiation direction z and the transverse directions x and y, and is determined by the offset of the two phase plates arranged in pairs in the transverse directions x and y. For alternative designs, pivotable prisms are provided in the adjustment optics.

[0020] Augmented Reality (AR)

[0021] This is an interactive experience of a real-world environment, where the filmed project is located in the real world and enhanced by computer-generated perceptible information. Augmented reality is understood as a computer-aided extension of the perception of reality through such computer-generated perceptible information. This information can appeal to all human senses. However, augmented reality often refers only to the visual representation of information, i.e., images or videos with computer-generated additional information or virtual objects added through fade-in / overlay. Applications and explanations of how augmented reality works can be found in the introduction to the examples and below.

[0022] "car"

[0023] "Automotive" generally refers to motor vehicles or the automotive industry. Therefore, the term is intended to include this branch, but also all other industry branches, including microdisplays or general luminous indicators with very high resolution and μ-LEDs.

[0024] "band gap"

[0025] The energy gap between the valence band and conduction band of a solid is called the band gap, also known as the band gap or band exclusion zone. Its electrical and optical properties depend largely on the size of the band gap. The size of the band gap is usually expressed in electron volts (eV). The band gap is used to distinguish metals, semiconductors, and insulators. The band gap can be tuned (i.e., changed) by various measures such as spatial doping to detune the crystal structure or by altering the material system. Material systems with a so-called direct band gap, where the maximum value of the valence band and the minimum value of the conduction band are superimposed in momentum space, allow electron-hole pairs to recombine with emitted light.

[0026] "Prague Grating"

[0027] A Bragg fiber grating is a special optical interference filter etched into an optical waveguide. Wavelengths within the filter bandwidth near λB are reflected. Various methods are used to generate periodic modulation of the refractive index within the fiber core of the waveguide. This creates regions with high and low refractive indices that reflect light of specific wavelengths (bandstop). The center wavelength of the filter bandwidth in a single-mode fiber is determined by the Bragg condition.

[0028] "Directionality"

[0029] Directivity, or directionality, is used to describe the radiation characteristics of μ-LEDs or other light-emitting components. High directionality corresponds to highly directional radiation or a low-radiation cone. Typically, the goal is to achieve a high level of directional radiation to minimize crosstalk between light and adjacent pixels. Consequently, the brightness of the light-emitting component varies depending on the viewing angle, thus differing from a Lambertian emitter.

[0030] Directionality can be altered, for example, by mechanical or other means on the side used for emission. Besides lenses, this includes photonic crystals or columnar structures (pillar structures) arranged on the emission surface of the pixelated array or, in particular, on an arrangement of μ-LEDs. These create a virtual bandgap that reduces or prevents the light vector from diffusing along the emission surface.

[0031] "Far field"

[0032] The terms near field and far field describe the spatial regions surrounding components that emit electromagnetic waves and have distinct characteristics. Typically, these spatial regions are divided into three areas: the reactive near field, the transition field, and the far field. In the far field, electromagnetic waves propagate as plane waves, independent of the radiating element.

[0033] "Screen window effect"

[0034] The screen-door effect (SDE) is a permanently visible image artifact in digital video projectors. The term describes an undesirable, technically relevant dark distance between individual pixels or their projected information, taking the form of a screen. This distance originates from the construction, as the conductive circuitry used for control runs between the individual LCD segments, where light is swallowed up and cannot reach the screen. If small photoelectric light-emitting devices are used, particularly μ-LEDs, or the distance between individual LEDs is too large, the low packing density produced when viewing a single LED can result in a visible difference in pixel areas between bright and dark spots. This so-called screen-door effect is particularly noticeable when viewed from a smaller distance, especially in applications such as VR (virtual reality) glasses. When the illumination differences within a pixel persist periodically across the entire matrix arrangement, the sub-pixel structure is often perceived and annoying. Therefore, the screen-door effect should be avoided as much as possible in automotive and augmented reality applications.

[0035] "Flip Chip"

[0036] Flip chip assembly is a method of fabrication and connection technology used to contact unpackaged semiconductor chips via contact bumps known as "bumps." With flip chip assembly, the chip can be directly mounted without additional interconnects, with its effective contact surface facing down (towards the substrate / circuit carrier) above the bumps. This results in a particularly small housing size and shorter conductor length. Therefore, flip chips are especially suitable for electronic semiconductor components that contact on their back side. Such components may also require special transfer techniques, such as using an auxiliary carrier. In the case of flip chips, the radiation direction is typically opposite to the side of the contact surface.

[0037] "trigger"

[0038] A flip-flop, also commonly known as a bistable switching stage or bistable switching element, is an electronic circuit with two stable output signal states. The current state depends not only on the currently available input signal but also on the state that existed prior to the point in time being considered. There is no time correlation, only event correlation. Due to its bistable nature, a flip-flop can store one bit of data indefinitely. However, unlike other types of memory, a voltage supply must always be guaranteed. Flip-flops are a fundamental component of sequential circuits and an essential part of digital technology, thus forming a basic element in many electronic circuits, from quartz clocks to microprocessors. In particular, as a basic one-bit memory, it is a fundamental element of the static memory module used in computers. Some embodiments may use different types of flip-flops or other buffer circuits to store state information. Their respective input and output signals are digital, meaning they alternate between logical "false" and logical "true". These values ​​are also referred to as "low" 0 and "high" 1.

[0039] Head-up display

[0040] A head-up display (HUD) is a display system or projection device in which a user maintains a certain head posture or gaze as information is projected into the user's field of view. HUDs are augmented reality systems. In some cases, HUDs incorporate sensors that determine the direction or orientation of the user's gaze in space.

[0041] Horizontal LED

[0042] In the case of horizontal LEDs, the electrical connection is located on the common side of the LED. This is typically the back side of the LED, away from the light-emitting surface. Therefore, horizontal LEDs have contacts formed only on the surface side.

[0043] "Interference filter"

[0044] An interference color filter is an optical component that uses the interference effect to filter light in a frequency-dependent manner (i.e., in a color-dependent manner for visible light).

[0045] "Collimation"

[0046] In optics, collimation refers to the parallel direction of diverging rays. The associated lens is called a collimator or condenser. A collimated beam contains mostly parallel rays and therefore has minimal scattering during propagation. Its use in this sense relates to the scattering of light emitted from a light source. A collimated beam emitted from a surface is highly dependent on the angle of radiation. In other words, the radiance (unit power per unit angle of a projected light source area) of a collimated light source varies with increasing angle. Light can be collimated in various ways, such as by using a special lens placed in front of the light source. Therefore, collimated light can also be considered as light with a high degree of directional dependence.

[0047] "Converter Materials"

[0048] Converter materials are materials suitable for converting light of a first wavelength into light of a second wavelength, shorter than the second. These include various permanent inorganic and organic dyes as well as quantum dots. Converter materials can be applied and constructed in a variety of processes.

[0049] "Lambert Launcher"

[0050] The so-called Lambertian radiation characteristic is required in many applications. This means that the luminescent surface ideally has a uniform radiation density on its surface, resulting in a vertically circular distribution of radiation intensity. Since humans can only assess brightness with their eyes (brightness is the luminous equivalent of illuminance), such Lambertian materials appear equally bright regardless of the viewing direction. This uniform, angle-independent brightness can be an important quality factor, especially for curved and flexible display surfaces, which is sometimes difficult to achieve with currently available displays due to their structure and LED technology.

[0051] LEDs and μ-LEDs are similar to Lambertian emitters and emit light at a large spatial angle. Depending on the application, further steps can be taken to improve radiation characteristics, or greater directionality can be attempted (see related notes).

[0052] "Conductivity type"

[0053] The term "conductivity type" refers to the majority (n- or p-type) charge carriers in a given semiconductor material. That is, a semiconductor material doped with n (negative) type is considered to be of n conductivity type. Similarly, if a semiconductor material is n-type, then it is n-type doped. The term "active" region in a semiconductor refers to the boundary region between an n-type doped layer and a p (positive)-type doped layer. Radiative recombination of p-type and n-type charge carriers occurs in this region. In some embodiments, the active region is further constructed and includes, for example, a quantum well or quantum dot structure.

[0054] "Light field display"

[0055] A display technology that projects raster images directly onto the retina of the eye is called a Virtual Retinal Display (VNA) or Light Field Display. The user gains the impression of a canvas floating in front of them. Light Field Displays can be provided as glasses, projecting raster images directly onto the user's retina. Using a Virtual Retinal Display, an image is created within the user's eye through direct projection of the retina. Light Field Displays are augmented reality systems.

[0056] "Plate printing" or "photolithography"

[0057] Photolithography is one of the core methods in semiconductor and microsystems technology, used to manufacture integrated circuits and other products. In this process, the image of a photomask is transferred onto a photosensitive photoresist through exposure. Subsequently, the exposed areas of the photoresist are dissolved (or the unexposed areas can also be dissolved when the photoresist cures under light). This forms a lithographic mask, which can be further processed through chemical and physical processes, such as applying material to the open areas or etching recesses in the open areas. The remaining photoresist can then be removed.

[0058] “μ-LED”

[0059] μ-LEDs are optoelectronic devices with edge lengths less than 70 μm, particularly less than 20 μm, and especially in the range of 1 μm to 10 μm. Another range is between 10 and 30 μm. This results in a range of several hundred μm. 2 Up to tens of μm 2 The area of ​​a μ-LED is approximately 60 μm², with an edge length of approximately 8 μm. In some cases, the edge length of a μ-LED is 5 μm or less, resulting in a size less than 30 μm². For example, the typical height of such a μ-LED is between 1.5 μm and 10 μm.

[0060] Besides classic lighting applications, μ-LEDs are primarily used in displays. Here, μ-LEDs form pixels or subpixels and emit light of a specified color. Due to their small pixel size and high density at close range, μ-LEDs are also suitable for small, monolithic displays used in AR applications.

[0061] Due to the extremely small size of μ-LEDs, their production and processing are significantly more difficult compared to previous large LEDs. This also applies to other components such as contact lenses, packaging, and lenses. Some aspects feasible in large optoelectronic components cannot be achieved in μ-LEDs, or must be achieved in different ways. In this respect, μ-LEDs are therefore significantly different from traditional LEDs, i.e., light-emitting elements with an edge length of 200 μm or more.

[0062] μ-LED array

[0063] See Microdisplay

[0064] "Miniature display"

[0065] A microdisplay, or μ-LED array, is a matrix with a large number of pixels arranged in prescribed rows and columns. Functionally, a μ-LED array typically forms a matrix primarily composed of μ-LEDs of the same type and color. Therefore, it provides a larger surface area for illumination. On the other hand, the purpose of a μ-display is to transmit information, which often also necessitates different colors or positional control for each individual pixel or subpixel. A microdisplay can consist of multiple μ-LED arrays, formed together on a backplane or other carrier. However, μ-LED arrays can also be used to form microdisplays.

[0066] Each pixel is on the order of a few μm, similar to a μ-LED. Therefore, a μ-display with 1920×1080 pixels, each with a 5μm μ-LED, and directly adjacent pixels has an overall size of 10 mm². In other words, a microdisplay or μ-LED array is a small-scale device implemented using μ-LEDs.

[0067] Microdisplays or μ-LED arrays can be formed from a single, identical component. The μ-LEDs in a μ-LED array can be formed monolithically. Such microdisplays or μ-LED arrays are called monolithic μ-LED arrays or microdisplays.

[0068] Alternatively, both components can be formed by growing μ-LEDs individually on a substrate and then arranging them individually or in groups on a carrier using a so-called pick-and-place process, maintaining a certain distance between them. Such a microdisplay or μ-LED array is referred to as non-monolithic. In a non-monolithic microdisplay or μ-LED array, other distances between individual μ-LEDs are also possible. These distances can be flexibly chosen depending on the application and implementation. Therefore, such a microdisplay or μ-LED array can also be referred to as a pitch-extended component. In a pitch-extended microdisplay or μ-LED array, the μ-LEDs are arranged at greater distances when delivered to the carrier than they are on the growth substrate. In a non-monolithic microdisplay or μ-LED array, each individual pixel may each include a blue-emitting μ-LED, a green-emitting μ-LED, and a red-emitting μ-LED.

[0069] To leverage the advantages of both monolithic and non-monolithic μ-LED arrays within a single module, monolithic μ-LED arrays can be combined with non-monolithic μ-LED arrays in a microdisplay. This allows the microdisplay to be used for different functions or applications. Such a display is called a hybrid display.

[0070] "μ-LED nanopillars"

[0071] μ-LED nanopillars are typically a stack of semiconductor layers with an active layer, thus forming a μ-LED. The edge length of a μ-LED nanopillar is less than its height. For example, the edge length of a μ-LED nanopillar is approximately 10 nm to 300 nm, while the height of the device may be 200 nm to 1 μm or higher.

[0072] "μ column"

[0073] μ-pillars or pillars specifically refer to a geometric structure, particularly a rod or bar, or generally a slender, cylindrical structure. The spatial dimensions of manufactured μ-pillars range from μm to nm. Therefore, nanopillars are also included herein.

[0074] "Nanopillars"

[0075] In nanotechnology, nanopillars are a design concept for nanoscale objects. Each of them ranges in size from approximately 10 nm to 500 nm. They can be synthesized from metallic or semiconducting materials. The aspect ratio (length divided by width) is 3 to 5. Nanopillars are made through direct chemical synthesis. A combination of ligands acts as a shape control agent and attaches to different faces of the nanopillar with varying strengths. This allows for different designs of nanopillars with different growth rates to produce an elongated object. μLED nanopillars are such nanopillars.

[0076] Miniature LED

[0077] Its size ranges from 100μm to 750μm, especially in the range greater than 150μm.

[0078] Moiré effect and Moiré lens array

[0079] The moiré effect refers to the noticeably coarser gratings produced by the superposition of regular, finer gratings. The resulting pattern, resembling a pattern from interference, is a special case of aliasing caused by undersampling. In signal analysis, aliasing occurs when the signal being sampled contains frequency components higher than half the sampling frequency. In image processing and computer graphics, aliasing occurs when an image is sampled, resulting in patterns not present in the original image. A moiré lens array is a special case of an Alvarez lens array.

[0080] "Single component"

[0081] A single-unit component refers to a component made from a single part. A typical example of such a component is a single-pixel array, where the array is made from a single part, and the array's μ-LEDs are fabricated together on a carrier.

[0082] "Optical mode"

[0083] A mode is a description of a wave's specific time-static properties. The wave is described as a sum of different modes. These modes differ in their spatial distribution of intensity. The shape of a mode is determined by the boundary conditions of wave propagation. Analysis based on vibration modes can be applied to both standing waves and continuous waves. For electromagnetic waves such as light, lasers, and radio waves, the following types of modes are distinguished: TEM (transverse electromagnetic) mode, TE (transverse electric) or H (magnetic) mode, TM (transverse magnetic) or E (electric) mode. TEM (transverse electromagnetic) mode: Both the electric and magnetic fields are always perpendicular to the direction of propagation. This mode can only propagate when there are two isolated conductors (equipotential surfaces) in a coaxial cable or when there are no electrical conductors in a gas laser or optical waveguide. TE or H mode: Only the electric field component is perpendicular to the direction of propagation, while the magnetic field component points in the direction of propagation. TM or E mode: Only the magnetic field component is perpendicular to the direction of propagation, while the electric field component points in the direction of propagation.

[0084] "Optoelectronic components"

[0085] An optoelectronic component is a semiconductor substrate that generates light through recombination of charge carriers during operation, and then emits light. The emitted light can range from infrared to ultraviolet, with the wavelength depending on various parameters, the material system used, and the doping. Optoelectronic components are also known as light-emitting diodes (LEDs).

[0086] For the purposes of this disclosure, the terms optoelectronic component and light-emitting component are used synonymously. Therefore, in terms of its geometry, a μ-LED (see related description) is a specific type of optoelectronic component. In displays, optoelectronic components are typically monolithic or single components placed on a matrix.

[0087] "Passive matrix backplane" or "passive matrix carrier substrate"

[0088] A passive matrix display is a matrix display in which individual pixels are passively controlled (without additional electronic components for each pixel). The light-emitting diodes (LEDs) of the display can be controlled by the circuitry of an integrated circuit (IC). In contrast, a screen with active pixels controlled by transistors is called an active matrix display. A passive matrix carrier substrate is part of and supports the passive matrix display.

[0089] "Photonic crystal" or "photonic structure"

[0090] A photonic structure can be a photonic crystal, a quasi-periodic, or a deterministic aperiodic photonic structure. A photonic structure generates a band structure for photons through periodic variations in the optical refractive index. This band structure can have a band gap within a specific frequency range. This means that photons cannot propagate through the photonic structure in all spatial directions. In particular, propagation parallel to the surface is generally blocked, but propagation perpendicular to the surface is possible. In this way, the photonic structure or photonic crystal determines propagation in a specific direction. It blocks or reduces the radiation along one direction and thus produces a radiation or a beam of radiation, directed as needed to a spatial region or emission region provided for this purpose.

[0091] Photonic crystals are photonic structures that appear or are generated in transparent solids. Photonic crystals are not necessarily crystals; their name comes from the diffraction and reflection effects of X-rays in crystals, due to their lattice constant. The structural size is equal to or greater than one-quarter of the photon's wavelength, meaning they range from 1 μm to several μm. They are generated using classical photolithography or through self-organizing processes.

[0092] Alternatively, similar or identical properties of photonic crystals can also be produced with aperiodic but still ordered structures. Such structures are in particular quasi-periodic or well-defined aperiodic structures. For example, this could be a helical arrangement of photons.

[0093] In particular, the so-called two-dimensional photonic crystal is mentioned here by way of example, which has a periodic variation of optical refractive index in two spatial directions that are perpendicular to each other, especially in two spatial directions that are parallel to the light emitting surface and perpendicular to each other.

[0094] However, one-dimensional photonic structures, particularly one-dimensional photonic crystals, also exist. One-dimensional photonic crystals exhibit a periodic change in refractive index along a single direction. This direction can extend parallel to the light exit surface. The one-dimensional structure allows beam shaping to occur in a first spatial direction. In a photonic structure, the photonic effect can be achieved in just a few cycles. The photonic structure can be designed, for example, to ensure that electromagnetic radiation is at least approximately collimated relative to the first spatial direction. Therefore, a collimated beam can be generated at least relative to the first spatial direction.

[0095] "Pixel"

[0096] The individual color values ​​of a digital photodiode pattern, and the surface elements required to record or display these color values ​​in an image sensor or screen with photodiode control, are called pixels, image points, image cells, or image dots. Therefore, a pixel is a positionable element in a display device and has at least one light-emitting device. Pixels have a definite size, and adjacent pixels are separated by a defined spacing or pixel space. In displays, especially μ displays, three (or several with added redundancy) sub-pixels of different colors are typically combined into one pixel.

[0097] "planar array"

[0098] A planar array is a substantially flat surface. It is typically smooth and has no protruding structures. Generally, surface roughness is undesirable and does not provide the desired functionality. A planar array is, for example, a monolithic planar array with multiple optoelectronic components.

[0099] Pulse Width Modulation

[0100] Pulse Width Modulation (PWM) is a type of modulation used to control components, particularly μ-LEDs. A PWM signal controls a switch configured to turn on and off the current flowing through the corresponding μ-LED, thus causing the μ-LED to light up or not. When using PWM, the output provides a square wave signal with a fixed frequency f. During each cycle T (= 1 / f), the relative amount of on-time compared to the off-time determines the brightness of the light emitted by the μ-LED. The longer the on-time, the brighter the light.

[0101] "Quantum trap"

[0102] A quantum well is understood as a potential line in a strip structure within one or more semiconductor materials, which restricts the degree of freedom of a particle to move in one spatial dimension (typically the z-direction). Thus, a charge carrier can only occupy a planar region (the xy-plane). The width of the quantum well determines the quantum mechanical states that the particle can adopt, resulting in the formation of energy levels (sub-bands), meaning the particle can only have discrete (potential) values.

[0103] "complex"

[0104] There is generally a distinction between radiative and nonradiative recombination. The latter produces a photon that can leave the component. Nonradiative recombination results in the generation of acoustic quanta, which heat the component. The ratio of radiative to nonradiative recombination is an important parameter that depends on the component size, among other factors. Typically, the smaller the component, the smaller the ratio, thus increasing nonradiative recombination relative to radiative recombination.

[0105] Refresh time

[0106] The refresh time is the time after which units such as displays must be rewritten to prevent information loss or premature refresh by external factors.

[0107] "Rohchip" or "light-emitting element"

[0108] A light emitter, or virgin chip, is a semiconductor structure fabricated on a wafer and then separated from it. This semiconductor structure is adapted to generate light after electrical contact during operation. Therefore, in this context, a virgin chip is a semiconductor structure containing active layers for generating light. Virgin chips are typically separated after contact, but can also be further processed in array form.

[0109] "Slot antenna"

[0110] A slot antenna is a special type of antenna in which, instead of surrounding the metallic structure with air (as a non-conductor) in space, an interruption is provided in the metallic structure (e.g., a metal plate, waveguide, etc.). This interruption causes the reflection of electromagnetic waves, the wavelength of which depends on the geometry of the interruption. Typically, the interruption follows the dipole principle, but theoretically it can have any other geometry. Therefore, a slot antenna comprises a metallic structure with a cavity resonator whose length is on the order of the visible light wavelength. The metallic structure can be arranged in or surrounded by an insulating material. The metallic structure is typically grounded to establish a certain potential.

[0111] Field of view

[0112] The field of view (FOV) refers to the area within the field of view of an optical device, solar sensor, camera's image surface (film or recording sensor), or perspective display where events or changes can be perceived and recorded. The field of view is specifically the area that a person can see without moving their eyes. Regarding augmented reality and prominent objects placed in front of the eyes, the field of view includes the area specified as multiple angles of view during stable eye fixation.

[0113] "Subpixel"

[0114] A subpixel describes the internal structure of a pixel. Generally, the term "subpixel" is associated with a higher resolution than that expected from a single pixel. A pixel can also contain several smaller subpixels, each emitting a different color. The overall color impression of a pixel is produced by the mixing of the individual subpixels. Therefore, a subpixel is the smallest locatable unit in a display device. Similarly, a subpixel has a specific size, smaller than the size of the pixel to which it belongs.

[0115] Vertical LED

[0116] Compared to horizontal LEDs, vertical LEDs have electrical connections on both the front and back sides. One of the two sides also forms a light-emitting surface. Therefore, a vertical LED has contacts formed on two opposing main surface sides. Consequently, a conductive yet transparent material must be deposited to ensure electrical contact while allowing light to pass through.

[0117] Virtual Reality

[0118] Virtual reality (VR) refers to the representation and simultaneous perception of reality and its physical properties in a real-time, computer-generated, interactive virtual environment. Virtual reality can replace the operator's real environment with a completely simulated environment.

[0119] The following sections will introduce various aspects of the μ-LED semiconductor structure. This includes the structural and material systems used for light emission. However, these aspects also involve key processing points.

[0120] In the field of augmented reality, and in automotive displays or other display devices with μ-LEDs, a fundamental aspect is that adjacent μ-LEDs in the device are also spaced apart as μ displays or μ arrays, making it impossible for the human eye to distinguish or identify individual μ-LEDs in such a device. Specifically, individual rows or columns of μ-LEDs arranged row by row or column by column cannot be distinguished or identified by the human eye. Therefore, the distance between μ-LEDs, or the pixel density and pixel pitch of the μ-LED array, should also be adjusted accordingly based on the distance between the observer and the μ-LED array, so that the observer's eye cannot distinguish individual μ-LEDs in the μ-LED array within the appropriate application.

[0121] Compared to arrays with organic LEDs (OLEDs) and liquid crystal displays (LCDs), μ-LED arrays have lower energy consumption and up to 10 6 Cd / m 2 The advantages of high brightness. Furthermore, μ-LED arrays can achieve extremely high pixel densities of up to 5000 pixels per inch (PPI) and nanosecond-level refresh rates when applied in displays. In addition, compared to OLED and LCD, μ-LED arrays have a very long lifespan and excellent stability in resisting environmental influences. Moreover, using μ-LED arrays allows for the adaptation of contrast range and / or resolution values ​​to desired values, such as application-specific adaptation.

[0122] Furthermore, arrays composed of μ-LEDs allow the light-emitting areas formed by the μ-LEDs to be adapted to fit desired shapes. This means that the application is not limited to ordinary displays, and μ-LED arrays can also be used in the automotive field, for example, using curved surfaces as displays or lighting devices. This area can be used to display information as well as a simpler light-emitting area for illumination or lighting.

[0123] One aspect involves the generation of different colors in a monolithic display. In a monolithic μ-LED array, each individual pixel can each contain, for example, a μ-LED that emits blue light, and each μ-LED can also have a converter material to partially or completely convert the blue light into secondary light, which, together with the blue primary light, produces mixed light, such as white light. Monolithic μ-LED arrays enable high brightness in the emitting area and are therefore advantageously used in automotive lamps, such as as a light source for automotive headlights.

[0124] Conversely, non-monolithic microdisplays or μ-LED arrays allow for the arrangement of other components, such as electronic components for operating the μ-LEDs, or sensors or detectors, using the gaps between adjacent pixels or μ-LEDs. Non-monolithic μ-LED arrays can be advantageously used, for example, in displays and displays with integrated sensors, particularly touchscreens, as well as for operating elements.

[0125] The effectiveness of quantum well mixing and the introduction of impurities affect the aging behavior of μ-LEDs. Although this can be mitigated by the measures disclosed herein, measurable and sometimes still relevant effects are found, especially at higher load current densities, particularly for very small components with edge lengths of only a few μm (e.g., μ-LEDs). The reason is clearly a region- or location-dependent concentration gradient of the diffused material. This depends on the arrangement and structure of the photomask.

[0126] Therefore, in one aspect, an optoelectronic component is proposed, comprising an n-type doped first layer, a p-type doped second layer having a first dopant added thereto, and an active layer. The latter is disposed between the n-type doped first layer and the p-type doped second layer and has at least one quantum well. According to the invention, the active layer can be subdivided into at least two regions, which are particularly adjacent to each other. Here, the second region is concentrically arranged around the first region, particularly the optical active region, and has quantum well mixing.

[0127] According to this aspect, the concentric arrangement of the quantum well mixture around the optical active region means that the first region, in particular the optical active region, is completely surrounded by the second region, and the two regions are arranged around a common center point of their respective faces. However, within manufacturing tolerances, small deviations between the center points and intentional offsets can also be considered.

[0128] The inventors have recognized that the introduction of impurities and quantum well mixing depend on the size of the open region on which the material to be diffused is to be introduced. Since impurities in the corners of a square or rectangular active layer (or a corner structure given by a photomask) can diffuse from more than one side, the corner regions have a higher impurity concentration or higher quantum well mixing than, for example, regions in the middle of the side length. This effect is undesirable in some cases and is avoided by choosing a concentric arrangement, since in such cases, the absence of corners does not lead to greater diffusion.

[0129] Quantum well mixtures can be generated by doping the second region with a second dopant (e.g., magnesium, zinc, or cadmium (Mg, Zn, Cd)). However, this is not intended to represent a limiting choice of dopant; rather, any other dopant of the same type that a person skilled in the art would conceive of can be used for doping.

[0130] By locally applying a diffusion mask to the semiconductor structure and using, for example, a diffusion process, a second dopant regionally reaches the active layer, and quantum well mixing occurs in the corresponding unmasked regions of the existing quantum wells. The regions where quantum well mixing occurs form a second region. Accordingly, the optoelectronic component accordingly includes a second dopant that is substantially uniformly disposed in the second region.

[0131] In another aspect, quantum well mixing is largely prevented in the first region, particularly the optically active region. More precisely, according to this aspect, quantum well mixing does not occur in the first region. Therefore, after the diffusion process, essentially no second dopant is disposed in the first region. This aspect can also be achieved through the aforementioned measures.

[0132] In the second region, rather than the first region, this localized quantum well mixing caused by impurities forms a potential barrier in the active layer, thereby restricting the lateral movement of charge carriers in the quantum wells within the active layer of the optoelectronic module in the first region. This largely prevents the current used to operate the optoelectronic module from flowing through the edge regions of the module, i.e., through the second region surrounding the first region. As a result, nonradiative recombination of charge carriers caused by nonradiative recombination centers or highly nonradiative surface recombination in the second region is reduced, leading to improved module performance.

[0133] To achieve further improvements, in another aspect, the two regions are designed to be at least approximately circular. The absence of corners results in impurities diffusing more evenly into the second region and preventing the formation of local maxima caused by corners. Therefore, a circular or nearly circular design of the two regions has the effect of ensuring that the concentration of impurities introduced along the circumference of both regions is as uniform as possible. This, in turn, leads to reduced performance loss due to surface recombination in the second region.

[0134] In this context, "circular" also means that polygons with six or more angles are possible, such as those with eight, ten, or more angles, because the positive effects of this shape on improving the performance of optoelectronic components have been recognized. Similarly, the term "circular" can also include ellipses, as well as oval and other circular convex shapes.

[0135] In another respect, the diffusion process used to generate quantum well mixing in the second region can mean that the second dopant is formed not only in the active layer in the second region, but also in the second p-type doped layer and at least partially in the region of the n-type doped layer adjacent to the active layer. However, this need not necessarily be understood as the regions in the second p-type doped layer and the first n-type doped layer where the second dopant is formed being consistent with the second region in the active layer, but consistency is also possible.

[0136] In another aspect, an optoelectronic component, particularly a μ-LED, is proposed, wherein a second region has a substantially uniform bandgap that is altered by quantum well mixing. The second region is concentrically arranged around the first region. This means that the energy of the bandgap has a substantially constant value in this region, and the bandgap only increases or decreases towards the edge of the region, or the energy of the bandgap increases or decreases.

[0137] Conversely, at least one quantum well in the first region, particularly the optically active region, has a smaller band gap than that in the second region. A potential barrier, arising from one of the aforementioned aspects, is correspondingly generated between the first and second regions. The transition between the two band gaps can be either a step with a sharp edge or a smooth transition.

[0138] Furthermore, at least one quantum well in the first region, particularly the optical active region, is essentially free of quantum well mixing, and therefore there is also essentially no second dopant in this region.

[0139] In addition to geometrically improving the performance of individual μ-LED regions, measures are proposed to improve wafer-level quantum well mixing. μ-LEDs are primarily produced at the wafer level as a mass production of such structures. Production can be monolithic, or μ-LEDs can be provided for later separation. In the first case, quantum well mixing can also act as a barrier against electrical crosstalk; in the latter case, the regions that will later form edges can be altered during manufacturing through quantum well mixing.

[0140] In one aspect, a semiconductor structure is proposed, comprising an n-type doped first layer, a p-type doped second layer mixed with the first dopant, and an active layer. The latter is disposed between the n-type doped first layer and the p-type doped second layer and has at least one quantum well. According to the invention, the active layer can be subdivided into a plurality of first regions, particularly optically active regions, and at least one second region. The plurality of first optically active regions and at least one second region are particularly adjacent to each other. Furthermore, the plurality of first regions are arranged spaced apart from each other in a hexagonal pattern and are surrounded by at least one second region having QWI (quantum well mixing).

[0141] One of the multiple, particularly optically active, first regions of the semiconductor structure can, for example, form a portion of each optoelectronic component. Accordingly, the semiconductor structure can be formed from multiple individual optoelectronic components, which can then be separated, for example, by an etching process of the epitaxial layer or by laser cutting and subsequent substrate removal.

[0142] For example, multiple first regions are designed to be circular. Compared to square μ-LED structures, the absence of corners means that impurities and quantum wells can be introduced more uniformly at the edges of the later μ-LEDs. This, in turn, means that nonradiative recombination in the edge regions of the second regions can be reduced, and consequently, the performance of each individual optoelectronic component can be improved.

[0143] In this context, "circular" means that polygons with six or more corners are possible, such as eight, ten, or more, because the positive effects of this shape on improving the performance of optoelectronic components have been recognized. Similarly, the term "circular" can also include ellipses, as well as oval and other circular convex shapes.

[0144] By locally applying a mask to the semiconductor structure and by means of, for example, a diffusion process, a second dopant regionally reaches the active layer, and QWIs appear in the corresponding regions of the existing quantum wells. At least one second region is formed in the region where quantum well mixing occurs. The semiconductor structure thus includes a second dopant, particularly a dopant different from the first dopant disposed in the p-type doped second layer, which is substantially uniformly disposed in at least one second region.

[0145] Conversely, QWI is largely prevented in the multiple first regions by applying masks. More specifically, no quantum well mixing occurs in the multiple first regions. Therefore, after the diffusion process, second dopants are arranged as little as possible in the multiple first regions, and thus no second dopants are arranged in the active layer of the quantum well in the first regions.

[0146] The division into a first region and a second region, along with the associated QWI, allows the first region to be used as an optical active region during subsequent operation of the terminal device (especially μ-LED). Accordingly, the first optical active region relative to the first region is referred to below.

[0147] By mixing localized quantum wells caused by impurities in at least one second region, rather than in multiple first optical active regions, an electronic barrier is formed in the active layer through a change in the band structure. This barrier restricts the lateral movement of charge carriers in the quantum wells of the active layer of the semiconductor structure across the multiple first optical active regions of the active layer. This largely prevents, for example, the current used to operate the optoelectronic device from flowing in the edge regions of the optoelectronic device, i.e., through the second region surrounding the first region. Since nonradiative recombination centers are typically located in the edge regions of the separated μ-LED structure, the charge carriers are kept away from these edge regions, resulting in improved device performance.

[0148] However, the introduction of impurities and thus quantum well mixing actually depends on the size of the open region on which the material to be diffused is introduced. Therefore, in the case of multiple first optical active regions arranged in a hexagonal pattern, a larger region with a higher local maximum impurity concentration is formed in the intermediate space between every three first optical active regions in a triangular arrangement, compared to the region directly between two adjacent first optical active regions. These maximums are due to the fact that the diffusion process occurs more efficiently in regions exposed to the second dopant than in smaller intermediate spaces, such as between two first optical active regions covered by a mask. In some cases, this effect is undesirable because achieving a very uniform diffusion pattern in the semiconductor structure is crucial for improving the low current efficiency of optoelectronic components.

[0149] Accordingly, on the other hand, a semiconductor structure is proposed comprising an n-type doped first layer, a p-type doped second layer having a first dopant added thereto, and an active layer. The latter is disposed between the n-type doped first layer and the p-type doped second layer and has at least one quantum well. According to the invention, the active layer can be subdivided into a plurality of first regions, particularly optically active regions, at least one second region, and at least one third region. The plurality of first optically active regions and at least one second region are particularly adjacent to each other. Furthermore, the plurality of first optically active regions are arranged at intervals between each other in a hexagonal pattern and are surrounded by at least one second region having a quantum well. In addition, at least one third region is disposed in the intermediate space between the plurality of first optically active regions and second regions, and is particularly adjacent to at least one second region.

[0150] In contrast to the above, in addition to multiple first optical active regions and at least one second region, the active layer is also divided into at least one third region.

[0151] At least one third region is arranged such that regions where local maxima of high impurity concentrations would occur according to the above aspects are inaccessible to quantum well mixing, for example by applying a mask, and thus quantum well mixing does not occur substantially in these regions, as well as in a large number of the first optical active regions. Therefore, after the diffusion process, no second dopant is substantially disposed in at least one third region or in the plurality of first optical active regions.

[0152] Furthermore, at least one second region surrounds a plurality of first optical active regions, such that each of the plurality of first optical active regions is concentrically surrounded by a portion of at least one second region, or is concentrically surrounded by one of the plurality of second regions individually. Accordingly, at least one second region is obtained, for example, consisting of continuous annular segments arranged respectively around one of the plurality of first optical active regions, or of individual regions of a plurality of annular segments arranged concentrically around one of the plurality of first optical active regions. Similarly, the term "annular" may also include circular, elliptical, oval, and other circular convex shapes that are arranged substantially concentrically around and completely surround the plurality of first optical active regions.

[0153] At least one third region is adjacent to at least one second region. Accordingly, at least one third region may have a continuous, similar network of regions arranged around a plurality of annular second regions. However, in another aspect, the plurality of third regions may each at least approximately map the shape of a kite curve. This may be formed, for example, by exactly three second regions arranged in a triangle and at least approximately circular or annular. Similarly, the plurality of third regions may be circular and arranged respectively in the middle of three first regions arranged in a triangle, which are at least approximately circular in shape.

[0154] A decisive factor in the arrangement of at least one third region is, for example, by applying a mask such as a dielectric or a photoresist mask, reducing the local maxima with higher impurity concentrations during the diffusion process in the second region, thereby obtaining a diffusion pattern that is as uniform as possible in the semiconductor structure.

[0155] Quantum well mixtures can be generated by doping the second region with a second dopant (e.g., magnesium, zinc, or cadmium (Mg, Zn, Cd)). However, this is not intended to represent a limiting choice of dopant; rather, any other dopant of the same type that a person skilled in the art would conceive of can be used for doping.

[0156] In another aspect, the diffusion process used to generate quantum well mixing in at least one second region can result in the formation of a second dopant not only in the active layer in the second region, but also in the second p-type doped layer and at least partially in the region of the n-type doped layer adjacent to the active layer. However, this need not necessarily be understood as the regions in the second p-type doped layer and the first n-type doped layer where the second dopant is formed being consistent with the second region in the active layer, but consistency is also possible.

[0157] In another aspect, a semiconductor structure is proposed in which at least one second region has a substantially uniform bandgap generated by quantum well mixing. This means that the energy of the bandgap has a substantially constant value in this region, and the bandgap only increases or decreases towards the edge of the region.

[0158] Conversely, the band gap in the plurality of first optical active regions and at least one quantum well in at least one third region is smaller than the band gap in at least one second region. Accordingly, a potential barrier according to one of the above aspects is generated between the plurality of first optical active regions and the second region, and between the at least one third region and the second region. The transition between band gaps can be a step with a sharp edge or a smooth transition.

[0159] In another aspect, the plurality of first optical active regions and at least one third region have substantially the same band gap. This is due to the fact that there is substantially no quantum well mixing in the plurality of first optical active regions and at least one quantum well in the at least one third region, and therefore substantially no second dopant in these regions.

[0160] According to another approach, a semiconductor structure, which can be formed from multiple individual optoelectronic components, can be divided into multiple optoelectronic components by, for example, etching of the epitaxial layer or by laser cutting followed by removal of the substrate. Each of the multiple optoelectronic components has a cross-section, for example, circular, and includes at least one of a plurality of first optical active regions and a portion of at least one second region. The first and second optical active regions are arranged concentrically within the circular cross-section. Accordingly, it is thus concluded that at least one-third of the semiconductor structure is not part of the multiple individual optoelectronic components, and therefore is particularly a waste product of the separation process. Attached Figure Description

[0161] The following sections use various design schemes and examples to illustrate some of the aspects mentioned above and summarized in more detail.

[0162] Figure 1 The diagram illustrates some requirements for a so-called μ display or microdisplay device in terms of various dimensions of field of view and pixel spacing in a μ display; Figure 2A diagram showing the spatial distribution of rod and cone cells in the human eye; Figure 3 A diagram showing the perceptual abilities of the human eye with assigned projection areas; Figure 4 A graph showing the sensitivity of rod and cone cells at different wavelengths is presented; Figure 5 The diagram illustrates some requirements for microdisplays of various sizes in terms of the field of view and collimation of pixels in a μ display; Figure 6 An exemplary design of a pixel array is shown to illustrate... Figure 1 and Figure 5 The parameters represented in the text; Figure 7 A graph showing the required number of pixels depends on the number of fields of view for a given resolution; Figure 8 The cross-sectional profiles of the square μ-LED structure and the associated doping concentration are shown to derive the proposed design; Figure 9 The semiconductor structure of the optoelectronic component with a cross-sectional profile having a corresponding doping concentration is shown in top view according to some aspects of the proposed principles. Figures 10 to 12 The various steps of the layer construction considering the proposed design and the manufacturing method of the optoelectronic components are shown; Figure 13 A diagram illustrating the bandgap of the optoelectronic component based on the proposed design is shown. Figure 14 and Figure 15 A top view of a first design of a semiconductor structure suitable for light emission, based on some aspects of the proposed design, and a relevant cross-sectional profile of the band gap of the semiconductor structure are shown respectively. Figure 16 and Figure 17 A top view of another design of a suitable light-emitting semiconductor structure based on some aspects of the proposed design is shown, the semiconductor structure having a relevant cross-sectional profile of the band gap; Figure 18 and Figure 19 A top view of a third design based on some aspects of the proposed design is shown, which has a relevant cross-sectional profile with a gap. Figure 20 and Figure 21 A top view of a fourth design of a semiconductor structure, as implemented in various aspects, and a relevant cross-sectional profile of the bandgap of the semiconductor structure are shown. Figures 22 to 24The layer structure based on some aspects of the proposed design and the method for manufacturing one or more optoelectronic components, particularly μ-LEDs, are shown. Figure 25 The bandgap of the semiconductor structure based on the proposed design is shown; Figure 26 An embodiment of a conventional optoelectronic component, such as an LED, is shown. Detailed Implementation

[0163] Augmented reality is largely created by a dedicated display that overlays images onto reality. This display can be placed directly in the user's line of sight, i.e., directly in front of them. Alternatively, beam deflection elements can be used to direct light from the display toward the user's eyes.

[0164] In both cases, a display can be implemented, and the user can wear glasses or other visual augmentation devices as part of the device. Google's™ Glasses is an example of such a visual augmentation device, allowing users to overlay certain information about objects in the real world. With Google™ Glasses, the information is displayed on a small screen in front of the glasses. In this respect, the appearance of this add-on device is a key feature of the glasses, combining technological functionality with the design aspects of wearing glasses. Simultaneously, users need glasses that don't have such bulky or easily damaged devices to provide augmented reality functionality. Therefore, one concept is that the glasses themselves become a display or at least one screen, with information projected onto or into a projector.

[0165] In this type of situation, the user's field of view is limited to the size of the glasses. Therefore, the area on which augmented reality can be projected is approximately the size of the glasses lenses. The same but different information can be projected onto or onto both lenses of a pair of glasses.

[0166] In other words, the image experienced by a user while wearing augmented reality glasses should have a resolution that creates a seamless impression, so that the user doesn't perceive augmented reality as a pixelated object or a low-resolution element. Straight bevels, arrows, or similar elements appear as staircase-like outlines at low resolutions, which is distracting for the user.

[0167] To achieve an ideal visual impression, two display parameters are considered important, as they influence the visual impression for a given or known human eye. One is the pixel size itself, the geometry and dimensions of a single pixel, or the area of ​​three subpixels representing that pixel. The second parameter is the pixel pitch, the distance between two adjacent pixels or subpixels, which varies depending on the context. Sometimes, pixel pitch is also referred to as the space between pixels. Larger pixel gaps can be detected by the user and perceived as gaps between pixels, potentially leading to what is known as the "flying screen effect." Therefore, the gap should not exceed a certain limit.

[0168] The maximum angular resolution of the human eye is typically between 0.02 and 0.03 arcminutes, roughly equivalent to 1.2 to 1.8 arcminutes per line. This results in a pixel pitch of 0.6-0.9 arcminutes. Some current mobile phone displays have approximately 400 pixels per inch, resulting in a viewing angle of approximately 2.9° at a distance of 25 cm from the user's eyes, or approximately 70 pixels per degree. Therefore, the distance between two pixels in such a display is within the range of maximum angular resolution. Furthermore, the pixel size itself is approximately 56 μm.

[0169] Figure 1 The pixel spacing is shown, that is, the distance between two adjacent pixels that depends on the field of view. In this respect, the field of view is the extension of the observable world seen at a given moment. This is because human vision is defined as the angle of view in degrees during a stable fixation of the eye.

[0170] In particular, the forward horizontal curvature of the binocular visual field is slightly higher than 210°, while the vertical curvature of the human visual field is approximately 135°. However, the range of visual ability is not uniform across the entire visual field and may vary from person to person.

[0171] Human binocular vision covers approximately 114° horizontally (peripheral vision) and approximately 90° vertically. The remaining degrees on both sides do not constitute binocular vision, but can be considered part of the field of view.

[0172] Furthermore, color vision and the ability to perceive shape and motion further limit the horizontal and vertical fields of vision. The rods and cones responsible for color vision are unevenly distributed.

[0173] This viewpoint Figures 2 to 4 This was explained in more detail. In the central visual domain, that is, directly in front of the eyes, as required by augmented reality applications, and partly in the automotive field, the eye's sensitivity is very high in terms of spatial resolution and color perception.

[0174] Figure 2 The spatial density of cones and rods per square millimeter is shown, which is related to the angle of the central concave region. Figure 3The wavelength-dependent color sensitivity of cones and rods is described. In the central region of the fovea, increased cone density (L, S, and M) leads to better color perception. Sensitivity begins to decrease at a distance of approximately 25° around the fovea, as the density of visual cells decreases. Near the edges, color perception decreases further, but contrast vision through rods remains over a wider angular range. Overall, this creates a radially symmetrical visual pattern for the eye, rather than a Cartesian one. Therefore, high resolution of all primary colors is necessary, especially at the center. At the edges, working with an emitter adapted to the spectral sensitivity of rods may suffice (maximum sensitivity 498 nm, see...). Figure 4 And the sensitivity of the eyes).

[0175] Figure 3 The graph of angular resolution A relative to the angular deviation α from the optical axis of the eye illustrates the different perceptual abilities of the human eye. It can be seen that the highest angular resolution A exists within the interval of + / - 2.5° angular deviation α, where the fovea 7 is arranged on the retina 19 with a diameter of 1.5 mm. Furthermore, the location of the blind spot 22 on the retina 19 is plotted, which appears in the region of the optic disc 23, with an angular deviation α of approximately 15°.

[0176] The eye can compensate for this non-constant density, and it can also compensate for so-called blind spots through minute eye movements. This change in the direction or focus of the gaze can be counteracted through appropriate optical systems and eye tracking.

[0177] In addition, even when wearing glasses, the field of vision is further limited; for example, the field of vision of each lens can be within approximately 80°.

[0178] Figure 1 The pixel pitch on the Y-axis, measured in μm, defines the distance between two adjacent pixels. Different curves, C1 to C7, define the diagonal dimensions of the corresponding displays, ranging from 5mm to approximately 35mm. For example, curve C1 corresponds to a display with a diagonal dimension of 5mm, meaning a side length of approximately 2.25mm. For a field of view of approximately 80°, the pixel pitch of a display with a 5mm diagonal dimension is within the range of 1μm. For larger displays, such as those using curve C7 and a 35mm diagonal dimension, the same field of view can be achieved with a pixel pitch of approximately 5μm.

[0179] However, Figure 1 The curves in the diagram illustrate that a larger field of view is preferred for augmented reality applications, while very high pixel density and small pixel pitch are required to avoid the well-known screen-flying effect. We can now calculate the pixel size for a given number of pixels, a given field of view, and a given diagonal size for a μ display.

[0180] Equation 1 shows the relationship between pixel size D, pixel pitch pp, number of pixels N, and display edge length d. The distance r between two adjacent pixels, calculated from their respective centers, is given by the following equation.

[0181] r = d / 2 + pp + d / 2.

[0182] D = d / N-pp (1)

[0183] N = d / (D + pp)

[0184] Assuming the distance between the monitor (e.g., glasses) and the eye is 2.54 cm (1 inch), then for the roughly estimated 1 arcminute angular resolution above, the distance r between two adjacent pixels is...

[0185] r = tan(1 / 60°) × 30mm

[0186] r = 8.7μm

[0187] Therefore, pixel size is less than 10 μm, especially when a certain space is required between two different pixels. Using the distance r between two pixels and a display with a size of 15 mm × 10 mm, 1720 × 1150 pixels can be arranged on the surface.

[0188] Figure 6 An arrangement with a carrier 21 is shown, on which a plurality of pixels 20 and 20a to 20c are arranged. Pixels 20 arranged adjacent to each other have a pixel pitch pp, while pixels 20a to 20c are placed on the carrier 21 with a larger pixel pitch pp. The distance between two pixels is given by the sum of the pixel pitch and half the size of each adjacent pixel. Each pixel 20 is configured such that its illumination characteristics, or emission vector 22, are substantially perpendicular to the emission surface of the corresponding LED.

[0189] The angle between the vertical axis on the emitting surface of the LED and the beam vector is defined as the collimation angle. In the example of emission vector 22, the collimation angle of LED 20 is approximately zero. LED 20 emits collinear light and does not expand significantly.

[0190] Conversely, the collimation angle of the emission vector 23 of LED pixels 20a to 20c is very large, and is in the range of approximately 45°. As a result, a portion of the light emitted by LED 20a overlaps with the emission of the adjacent LED 20b.

[0191] The emission of LEDs 20a to 20c partially overlaps, resulting in the superposition of their respective light emissions. If the LEDs emit different colors of light, the result will be a mixture or combination of colors. A similar effect occurs between high-contrast areas, i.e., when LED 20a is dark while LED 20b emits some kind of light. Due to the overlap, the contrast is reduced, and the information at each individual location corresponding to the pixel position is also reduced.

[0192] For displays with a small distance from the user's eyes, such as those mentioned above, a large collimation angle can be quite annoying due to the aforementioned effects and other drawbacks. Users can perceive a large collimation angle and may experience a slight difference in the color of depicted objects, a blurriness, or reduced contrast.

[0193] in this regard, Figure 5 This illustrates the collimation angle in degrees relative to the field of view in degrees, which is independent of a specific display size. For smaller display sizes, such as those in curve C1 (approximately 5 mm diagonally), the collimation angle increases significantly depending on the field of view.

[0194] As monitor sizes increase, the requirements for collimation change dramatically. Therefore, even with large monitor geometries, as shown by curve C7, the collimation angle reaches approximately 10° within a 100° field of view. In other words, the collimation requirements increase for larger monitors and larger fields of view. In such monitors, the light emitted from the pixels must be highly collimated to avoid or reduce the aforementioned effects. Therefore, when providing users with monitors that offer large fields of view, even if the monitor's geometry is relatively large, robust collimation capabilities are necessary.

[0195] Based on the above charts and equations, it can be deduced that as the geometry and field of view of a display increase, the requirements regarding pixel pitch and collimation become increasingly challenging. As Equation 1 shows, the size of a display increases dramatically with the number of pixels. Conversely, a large field of view requires a large number of pixels to achieve sufficient resolution and avoid screen flickering or other interference effects.

[0196] Figure 7 The diagram illustrates the number of pixels required to achieve an angular resolution of 1.3 armes. For a field of view of approximately 80°, the number of pixels exceeds 5 million. It can be quickly estimated that the pixel size for QHD resolution is far less than 10μm, even with a display size of 15mm × 10mm. In total, an augmented reality display with resolutions in the HD range (i.e., 1080p) requires a total of 2,073,600 pixels. This would cover a field of view of approximately 50°. The number of pixels arranged in a 10 × 10mm display with a pixel spacing of 1μm would result in a pixel size of approximately 4μm.

[0197] The above considerations make it clear that the challenges in terms of resolution, collimation, and field of view suitable for augmented reality applications are considerable. Therefore, the technical implementation of such displays also places very high demands on them.

[0198] Traditionally used technologies were designed for manufacturing displays with LED edge lengths in the range of 100 μm or even longer. However, they cannot automatically scale to the 70 μm and below dimensions required here. Pixel sizes of a few μm and distances of a few μm or even smaller, closer to the order of magnitude of the generated light wavelength, require new processing technologies.

[0199] Furthermore, new challenges have emerged in light collimation and guidance. For example, optical lenses that can be easily structured into larger LEDs and calculated using classical optics cannot be directly scaled down to such small sizes without using Maxwell's equations. In addition, it is nearly impossible to manufacture small lenses without large errors or deviations. In some variants, quantum effects affect the behavior of pixels of these sizes and must be taken into account. Tolerance requirements in the production or transmission techniques of pixels on auxiliary carriers or matrix structures are becoming increasingly stringent. Pixels must also be contactable and individually controllable. Conventional circuitry has space requirements that, in some cases, exceed the pixel area, creating placement and space issues.

[0200] Therefore, new designs for controlling and accessing pixels of this size may be entirely different from traditional technologies. Finally, a key focus is on the power consumption of such displays and controls. Low power consumption is particularly desirable for mobile applications.

[0201] In summary, many designs suitable for larger pixel sizes require extensive modifications before successful scaling down. While a design suitable for producing 200 μm LEDs can be easily scaled up to 2000 μm LEDs, scaling down to 20 μm is much more difficult. Many documents and literature disclosing such designs do not account for the various effects and increased requirements of extremely small sizes, and therefore are not directly applicable to or limited to pixel sizes significantly larger than 70 μm.

[0202] The following sections present various aspects of the structure and fabrication of μ-LED semiconductors, including processing, optical coupling output and light guidance, display, and control. These are suitable for designing displays with pixel sizes of 70 μm and below. Some designs are specifically designed for the production, optical coupling output, and control of μ-LEDs with edge lengths less than 20 μm, particularly less than 10 μm. It goes without saying that the designs presented here regarding these aspects can and should be combined with each other. For example, this relates to the design of μ-LEDs with designs for producing coupled output light. Specifically, μ-LEDs implemented, for example, by methods to avoid edge defects or by current conduction or current contraction, can provide optical coupling output structures based on photonic crystal structures. Special control can also be implemented for displays with variable pixel sizes. Light guidance with piezoelectric mirrors can be implemented in μ-LED displays based on slot antennas or conventional monolithic pixel matrices.

[0203] In some of the design options and aspects described below, additional examples of various design options or combinations of their aspects are indicated. These are intended to clearly show that those skilled in the art can combine the aspects, design options, or parts thereof with each other. Some applications require specially modified designs, while others have lower technical requirements. Automotive applications and displays, for example, typically have larger pixel edge lengths due to the greater distance from the user. In particular, there are classic pixel applications or virtual reality applications, in addition to augmented reality applications. In the context of this disclosure, this is also clearly desirable for realizing μ-LED displays with pixel edge lengths below 70 μm.

[0204] To explain the various aspects of the concentric arrangement of quantum well mixing, Figure 8 A square LED is shown, which has several regions 2b and 2c in which quantum well mixing occurs, but the second and third regions are not concentrically surrounding the first region.

[0205] For example, by applying a diffusion mask, the first region 2a can be formed to have the same or similar shape and size. To this end, the exposed regions 2b and 2c around the diffusion mask are loaded with a second dopant b, allowing quantum well mixing to occur in these regions. As described above, the edges of the square LED in the corner region 2c contain a higher impurity concentration or exhibit higher quantum well mixing than, for example, in the middle of the side length 2b, because at the corner, the impurity b may diffuse from more than one side. As a result, regions 2b and 2c appear during diffusion, each with a different impurity concentration in the quantum wells of the active layer 2. This effect leads to different quantum well mixing at the edges of the μ-LEDs in regions 2b and 2c, resulting in different band gaps in the quantum wells of the active layer 2, which degrades the performance of the μ-LEDs.

[0206] pass Figure 8 The cross-section of the μ-LED shown and the concentration of the second dopant b derived from it along the cross-sectional axis AA illustrate this effect. It can be seen that the concentration of the second dopant b in the corner, i.e., in the third region 2c, is higher than the concentration in the first region 2a and the second region 2b. The concentration further decreases from the second region 2b to the first region 2a. This decrease in concentration mirrors the increase in concentration from the first region 2a through the second region 2b to the third region 2c.

[0207] This concentration curve should be considered qualitatively only and does not represent any absolute value or ratio between the dopant concentrations in the first, second, and third regions 2a, 2b, and 2c. By changing Figure 9 The geometry of the optoelectronic component 1 shown enables the mixing of different quantum wells in regions 2b and 2c. The two regions 2a and 2b of the optoelectronic component 1 are arranged concentrically, and the second region 2b completely surrounds the first region 2a.

[0208] The first region 2a is formed by applying a diffusion mask that may have the same or similar shape and size, at least approximately circular. A second dopant b is then applied to the exposed regions 2b surrounding the diffusion mask, allowing quantum well mixing to occur in these regions. Due to this shape, the second dopant b introduced into the second region 2b can diffuse uniformly along the circumference of both regions 2a and 2b, resulting in a higher impurity concentration or higher quantum well mixing at the corners, as is the case with the corner shape of the μ-LED described above, compared to, for example, in the middle of the μ-LED's side length.

[0209] By comparison Figure 8 and Figure 9 The effect becomes apparent because Figure 8 In the middle, the impurity / second dopant b can diffuse from one side above to the four corners of the third region 2c. Figure 9 In this process, dopant b is allowed to diffuse vertically at any point on the outer periphery of the second region 2b in a uniformly distributed manner.

[0210] also, Figure 9A corresponding cross-section of the optoelectronic component 1 is shown, along with the concentration of the second dopant b derived therefrom along the cross-sectional axis BB. The concentration of the second dopant b is substantially constant within the second region 2b and decreases in the defined transition region from the second region 2b to the first region 2a. Furthermore, in the first region, the concentration of the second dopant b is largely constant and increases in the defined transition region from the first region 2a to the second region 2b. However, the concentration distribution of the second dopant b can vary and does not represent any absolute value or ratio between the dopant concentrations in the first region 2a and the second region 2b. Similarly, the defined transition region between the second and first regions can also vary, being designed to be either slightly shallower or steeper.

[0211] The decisive factor is the formation of a substantially sharp edge in the transition region from the first region 2a to the second region 2b, and the dopant concentration in the first region 2a is essentially zero or less than or equal to 2 compared to the dopant concentration in the second region 2b, for example, less than or equal to 5 or also less than 10. In other words, the dopant concentration in the second region 2b is, for example, greater than or equal to 2, greater than or equal to 5, or even greater than 10 compared to the dopant concentration in the first region 2a.

[0212] Figure 10 , Figure 11 and Figure 12 The layer structure and fabrication of optoelectronic element 1 are shown, such as... Figure 9 As shown, the optoelectronic component 1 includes an n-type doped first layer 5, a p-type doped second layer 6, and an active layer 2, which is disposed between the n-type doped first layer 5 and the p-type doped second layer 6 and has at least one quantum well.

[0213] By applying a diffusion mask 7, such as a dielectric material like silicon dioxide, silicon nitride, silicon oxynitride, aluminum oxide, or a photomask, a corresponding mask with a substantially circular shape similar to the first region 2a is generated on the surface of the p-type doped second layer 6.

[0214] In another scenario, the surface can be covered with a thin layer before the photomask is applied, which also serves as the photomask and is therefore usable for processing. This can save process steps, particularly the new application or structuring of the mask, in some more complex arrangements. Such a more complex structure will be the design scheme of other figures. The additional thin layer is, for example, chromium. It is under-etched, meaning that an etching process also removes part of the chromium layer, thus allowing the mask and the underlying thin chromium layer to be used in two or more etching processes. Similarly, chromium can act as a diffusion barrier for a second dopant.

[0215] Then a second dopant is applied and diffused. By applying and diffusing the second dopant b onto the remaining free surface of the p-type doped second layer 6, the second dopant b diffuses into the active layer 2 and forms at least two regions 2a, 2b therein. Accordingly, the two regions 2a, 2b in the active layer 2 result in a projected form of a diffusion mask 7, which is applied to the surface of the p-type doped second layer 6 in the active layer 2.

[0216] Under suitable process conditions, the diffusion of the second dopant b into the active layer 2 leads to the aforementioned quantum well mixing. The first region 2a, particularly the optical active region, is the region directly projected below the diffusion mask 7, and due to the diffusion mask 7, virtually no second dopant b diffuses into this region.

[0217] The second region 2b is formed accordingly as a region located in the direct projection below a region, wherein the second dopant b is loaded around the diffusion mask 7 as a free surface. Therefore, the second dopant b diffuses into the second p-type doped layer 6, into the active layer 2, into the second region 2b, and also partially diffuses into the region adjacent to the n-type doped layer 5 and the active layer 2, depending on the doping distribution and process parameters.

[0218] Therefore, the second region 2b has a second dopant b and thus has quantum well mixing.

[0219] In addition to the layer structure of the optoelectronic component 1 after the diffusion mask 7 has been applied and the second dopant b has been diffused, Figure 13 The band gap of at least one quantum well in the active layer 2 is shown. The energy of the band gap E in the vertical direction of the figure is shown in the horizontal cross-section of the optoelectronic component 1 in this figure.

[0220] Viewed from left to right, the energy of band gap E is constant in the second region 2b and decreases in the defined transition region from the second region 2b to the first region 2a. In the first region 2a, the energy of band gap E is again constant and increases in the defined transition region from the first region 2a to the second region 2b, where the energy of band gap E in the second region 2b is again assumed to be constant.

[0221] However, the energy curves for band gap E shown can vary and do not represent the absolute value or ratio between the energies of band gap E in the first and second regions 2a, 2b. The second and first regions can also be varied, and can be designed to be both slightly shallower and steeper.

[0222] The decisive factor is that the energy of the band gap E from the first region 2a is less than the energy of the second region 2b, and the energy of the band gap E is essentially constant in each of the first and second regions 2a and 2b.

[0223] Beyond geometric considerations for improving performance in individual LED regions, examples of improving quantum well doping at the wafer level are given below. The production of μ-LED structures is independent of their subsequent use as individual components or in monolithic form at the wafer level. The Zn diffusion and other measures described above can improve both low and high current efficiency by reducing impurity density and permanently bonded or saturated impurities in the later active layer regions.

[0224] Figure 14 A top view of a portion of a first embodiment of semiconductor structure 0 is shown, along with a cross-sectional profile of the bandgap energy of the semiconductor structure along the cleavage axis AA. A plurality of first optical active regions 2a and second regions 2b are formed in semiconductor structure 0. The plurality of first optical active regions 2a are arranged at intervals from each other in a hexagonal pattern, and one of the second regions 2b is surrounded by the plurality of first optical active regions 2a and arranged in the intermediate space between them.

[0225] Furthermore, one of the plurality of first optical active regions 2a of the semiconductor structure 0 forms part of one of the plurality of optoelectronic components 1. Here, due to its overall size, the optoelectronic component can be considered as a μ-LED. The plurality of first optical active regions 2a can be formed, for example, by applying a mask or, for example, by applying mask segments that may have the same or similar shape and size. Then, a second dopant b is loaded around the exposed second region 2b around the mask or mask segments, thereby allowing QWI to occur in this region. Through the second dopant and through the QWI associated in the second region, the energy of the bandgap changes in this region compared to the region where no quantum well mixing occurs.

[0226] Below Figure 14 The cross-section of semiconductor structure 0 shown, and the energy flow of the bandgap along the cross-sectional axis AA derived therefrom, illustrate the energy flow of the bandgap in regions 2a and 2b. It can be seen that the energy of the bandgap in the second region 2b is greater than the energy of the bandgap in the first optical active region 2a. The energy of the bandgap decreases from the second region 2b to the first optical active region 2a, and in a mirror image, the energy of the bandgap increases from the first optical active region 2a to the second region 2b, corresponding to this decrease.

[0227] However, the curves shown below and similar curves are considered qualitative only and do not represent the absolute value or proportion of the bandgap energy in the multiple first optical active regions 2a and the second region 2b. The transition region between the second optical active region and the first optical active region can vary and be designed to be either slightly shallower or steeper. The decisive factor is the formation of a substantially sharp edge in the transition region from the multiple first optical active regions 2a to the second region 2b, and the bandgap energy in the multiple first optical active regions 2a being less than the bandgap energy in the second region 2b.

[0228] In other words, this means that the dopant concentration of the second dopant b in the second region 2b is greater than the dopant concentration of the second dopant b in the plurality of first optical active regions 2a.

[0229] also, Figure 14 The diagram shows that the bandgap energy in the second region 2b is not a constant value, but rather a local maximum value in the region where the maximum possible distance between multiple first regions 2a occurs. This is because, in the larger region loaded with the second dopant b, the diffusion process and the mixing of the quantum wells occur more efficiently compared to the smaller intermediate space between two first optically active regions 2a, for example, covered by a mask.

[0230] Below Figure 15 The cross-section of the semiconductor structure 0 shown, and the energy of the bandgap derived from it along the direction of the cross-sectional axis (BB), illustrate the energy direction of the bandgap along the circumference of the optoelectronic component 1. Here, the cross-sectional axis extends through the second region 2b. According to the above explanation, the energy of the bandgap in the second region 2b does not have a constant value, but rather has a maximum value in the region where the maximum possible distance between multiple first regions 2a occurs, and a minimum value in the region where the minimum possible distance between multiple second regions 2b occurs. Figure 15 In this context, for example, Y represents the region where the bandgap energy of a semiconductor structure is at a local maximum, and X and Z exemplarily represent the regions where the bandgap energy of a semiconductor structure is at a local minimum.

[0231] However, in practice, it is desirable to obtain the most uniform and constant bandgap energy possible in the second region 2b of the semiconductor structure 0 and correspondingly along the circumference of the optoelectronic component 1. Therefore, three design schemes are proposed below. Figure 16 and Figure 17 , Figure 18 and Figure 19 as well as Figure 20 and Figure 21 In order to counteract the effect of the local maximum value of bandgap energy in semiconductor structure 0. Figure 16 and Figure 17 , Figure 18 and Figure 19 as well as Figure 20 and Figure 21 Top views of the semiconductor structure 0 according to the present invention and the cross-sectional profiles of the bandgap energy of the semiconductor structure along the cutting axes AA and BB are shown respectively.

[0232] Apart from Figure 14 and Figure 15 In addition to the example structure in the example, besides the plurality of first optical active regions 2a and at least one second region 2b, at least one additional third region 2c is formed. This at least one third region 2c is arranged in the intermediate space between the plurality of first optical active regions 2a.

[0233] More precisely, Figure 16 A portion of a semiconductor structure 0 having multiple first optical active regions 2a, second regions 2b, and multiple third regions 2c is shown. As described above, the multiple first optical active regions 2a are arranged at intervals from each other in a hexagonal pattern. The second regions 2b surround the multiple first optical active regions 2a in such a way that one of the multiple first optical active regions 2a is surrounded by the second region 2b in a ring-like and / or concentric manner. The second region 2b is, for example, divided into multiple ring segments and connected only point-like to the next adjacent ring segment of the second region 2b. The multiple third regions 2c are formed by the three ring segments of the second region 2b in the form of triangular curves.

[0234] Multiple first optical active regions 2a and third regions 2c can be formed, for example, by applying a mask or by applying mask segments that may have the same or similar shape and size. Then, the exposed second region 2b around the mask or mask segments is loaded with a second dopant, thereby allowing QWI to occur in that region.

[0235] Below Figure 14 The cross-section of semiconductor structure 0 shown in the figure and the band gap energy along the cross-sectional axis AA illustrate the band gap energies in regions 2a, 2b, and 2c. It can be seen that the band gap in the second region 2b is larger than the band gaps in the first optical active region 2a and the third region 2c. Local widening of the band gap can be observed in the region where axis AA intersects with the second region 2b. Corresponding to the area of ​​the second region 2b intersecting axis AA, the band gap energy value will be higher or lower.

[0236] However, this curve is only considered a qualitative curve and does not represent the absolute value or energy ratio of the band gaps of the multiple first optical active regions 2a, second region 2b, and multiple third optical active regions 2c. Similarly, the transition region between the first optical active regions 2a, second region 2b, and third region 2c can also vary and be designed to be both slightly shallower and steeper.

[0237] The decisive factor is the formation of substantially sharp edges in the transition regions from the multiple first optical active regions 2a to the second region 2b and from the third region 2c to the second region 2b, and the bandgap energies in the multiple first optical active regions 2a and the third region 2c are lower than the bandgap energy in the second region 2b. In other words, this means that the dopant concentration of the second dopant b in the second region 2b is greater than the dopant concentration of the second dopant b in the multiple first optical active regions 2a and the third region 2c.

[0238] The following text is in Figure 17 The cross-section of semiconductor structure 0 shown, and the energy of the bandgap derived from it along the cross-sectional axis BB, illustrate the energy trajectory of the bandgap along the circumference of optoelectronic component 1. The cross-sectional axis extends through the second region 2b. Figure 15 In contrast to the illustration, the bandgap energy in the second region 2b shows a less pronounced change. By introducing multiple third regions 2c, the local maxima of the bandgap energy in the semiconductor structure 0 are made less pronounced in the intermediate regions of the corresponding three of the multiple first optical active regions 2a. Therefore, a more uniform bandgap energy can be obtained in the second region 2b. This, in turn, leads to improved performance of the optoelectronic component 1.

[0239] exist Figure 18 and Figure 19 The diagram illustrates another embodiment of the semiconductor structure 0 according to the present invention, and the energy of the bandgap in the semiconductor structure 0 derived therefrom along the cutting axes AA and BB.

[0240] Multiple third regions 2c are each designed as a circle and are arranged at the center of three of the multiple first optical active regions 2a. The term "circular" can also include elliptical, oval, and other circular protrusions. This arrangement of the multiple third regions 2c is similar to... Figure 16 and Figure 17 The method is used to reduce the local maximum value of the applied second dopant b on the semiconductor structure 0, so as to achieve a substantially uniform dopant concentration in the second region 2b. The middle of each of the three of the plurality of first optical active regions 2a is arranged in this manner. Figure 18 The third region 2c shown has demonstrated improved performance of the optoelectronic component 1. Correspondingly, the second region 2b does not form a continuous annular segment, but rather fills the intermediate space between the multiple first optical active regions 2a and the third region 2c.

[0241] Multiple first optical active regions 2a and third regions 2c can be formed, for example, by applying a mask or by applying mask segments that may have the same or similar shape and size. For this purpose, a second dopant b is loaded onto the exposed second region 2b around the mask or mask segments, thereby enabling QWI to occur in that region.

[0242] The following text is in Figure 18 The cross-section of semiconductor structure 0 shown, and the energy distribution of the bandgap along the cross-sectional axis AA derived from it, illustrate the energies of the bandgap in regions 2a, 2b, and 2c. It can be seen that the energy of the bandgap in the second region 2b is greater than that in the first optical active region 2a and the third region 2c. Local widening of the bandgap can be observed in the region where axis AA intersects with the second region 2b. Similarly, the transition regions between the first region, the second region 2b, and the third region 2c can also be varied and designed to be both slightly shallow and steep.

[0243] The decisive factor is that substantially sharp edges are formed in the transition regions from the multiple first optical active regions 2a to the second region 2b and from the third region 2c to the second region 2b, and the band gap energies in the multiple first optical active regions 2a and the third region 2c are less than the band gap energy in the second region 2b. In other words, this means that the dopant concentration of the second dopant b in the second region 2b is greater than the dopant concentration of the second dopant b in the multiple first optical active regions 2a and the third region 2c.

[0244] Below Figure 19 The cross-section of semiconductor structure 0 shown in the diagram, and the bandgap energy derived from it, along the direction of the cross-sectional axis indicated by the arrow, show the direction of the bandgap energy along the circumference of the optoelectronic device. The cross-sectional axis extends through the second region 2b. (As shown in...) Figure 17 In the illustration, the energy of the band gap in the second region 2b is again not constant.

[0245] Due to the area covered by each of the multiple third regions 2c, the ratio of Figure 16 In the embodiment described, the multiple third regions 2c are small, thus exhibiting more pronounced local maxima in the regions where the maximum possible distance occurs between the multiple first regions 2a and the multiple third regions 2c. Correspondingly, local minima also arise in the regions where the minimum distance occurs between the multiple first regions 2a and the multiple third regions. Figure 19 In the diagram, the local maximum region of the bandgap energy of the semiconductor structure is exemplarily labeled with X and Z, and the local minimum region of the bandgap energy of the semiconductor structure is exemplarily labeled with Y.

[0246] The decisive factor is, with Figure 14Compared to the embodiments described above, due to the introduction of multiple third regions 3c, the size of the local maximum value of the bandgap energy in the semiconductor structure 0 is smaller, thus resulting in a relatively uniform and constant bandgap energy generally present along the circumference of the optoelectronic element 1 or within the second region 2b in the semiconductor structure 0. This, in turn, has led to an improvement in the performance of the optoelectronic element 1.

[0247] also, Figure 19 The optical active region 2a of each of the plurality of first optical active regions 2a of the semiconductor structure 0 is shown to form part of the optoelectronic component 1.

[0248] exist Figure 20 and Figure 21 The diagram illustrates another embodiment of the semiconductor structure 0 according to the present invention, and the energy of the bandgap in the semiconductor structure 0 derived therefrom along the cutting axes AA and BB.

[0249] Multiple first optical active regions 2a are concentrically surrounded by second regions 2b. Accordingly, multiple second regions 2b are generated, each arranged in a ring or circle around one of the multiple first optical active regions 2a. The terms "ring" or "circular" may also include elliptical, oval, and other circular protrusions.

[0250] Furthermore, the semiconductor structure 0 has a third region 2c disposed in the intermediate space between a plurality of first optically active regions 2a and a second region 2b. The plurality of first optically active regions 2a and the third region 2c can be formed, for example, by applying a mask or, for example, by applying mask segments that may have the same or similar shape and size. For this purpose, a second dopant b is loaded onto the exposed second region 2b around the mask or mask segments, thereby enabling QWI to occur in this region.

[0251] This annular arrangement of multiple second regions 2b surrounding one of the multiple first optical active regions 2a and the third region 2c avoids the formation of local maxima of the applied second dopant in the intermediate space between the three first optical active regions 2a. In this way, a substantially uniform dopant concentration can be obtained in the multiple second regions 2b. This, in turn, means that a substantially uniform QWI can occur in the multiple second regions 2b, which leads to improved performance of the optoelectronic component 1.

[0252] Below Figure 20 The bandgap energy shown is along the cross-sectional axis AA. The bandgap energy in the second region 2b is greater than that in the first optical active region 2a and the third region 2c. Local widening of the bandgap can be seen in the region where axis AA intersects with the second region 2b.

[0253] However, this curve is only considered a qualitative curve and does not represent the absolute value or ratio between the bandgap energies of the multiple first optical active regions 2a, second region 2b, and third region 2c. Similarly, the transition region between the first optical active region, the second region 2b, and the third region 2c can also vary and be designed to be both slightly shallow and steep.

[0254] The decisive factor is that substantially sharp edges are formed in the transition regions from the plurality of first optical active regions 2a to the second region 2b and in the transition regions from the third region 2c to the second region 2b, and the band gaps in the plurality of first optical active regions 2a and in the third region 2c are smaller than the band gaps in the second region 2b.

[0255] In other words, this means that the dopant concentration of the second dopant b in the second region 2b is greater than the dopant concentration of the second dopant b in the plurality of first optical active regions 2a and third region 2c.

[0256] Below Figure 21 The cross-section of semiconductor structure 0 shown, and the bandgap energy derived therefrom, along the direction of the cross-sectional axis BB, illustrate the direction of the bandgap energy along the circumference of optoelectronic component 1. This cross-sectional axis extends through the second region 2b. Figure 15 , Figure 17 and Figure 19 In contrast to the illustration, the bandgap energy in the second region 2b has a substantially constant value. By introducing the third region 2c, local maxima of the applied second dopant b are prevented from forming in the region of the gap between each of the three first optical active regions 2a, thus eliminating local maxima of bandgap energy in the semiconductor structure 0. In this way, a substantially uniform bandgap energy can be achieved in the second region 2b.

[0257] Figure 22 , Figure 23 and Figure 24 The layer structure and corresponding examples are shown. Figure 16 , Figure 18 and Figure 20 The semiconductor structure 0 shown is fabricated as follows. The semiconductor structure 0 includes an n-type doped first layer 5, a p-type doped second layer 6 doped with a first dopant, and an active layer 2 disposed between the n-type doped first layer 5 and the p-type doped second layer 6, having at least one quantum well. These layers are, for example, epitaxially deposited on a carrier substrate (not shown here). In addition to the layers shown here, other layers, contact layers, sacrificial layers, etc., may also be provided.

[0258] Figure 23The next step, in which the structured mask 7 is applied, is shown. The mask is penetrated at certain locations, thereby introducing dopant b there. The diffusion of the second dopant b into the active layer 2 results in the QWI described above.

[0259] Figure 24 The structure shown is formed by applying a mask or a mask segment 7, such as a dielectric or photoresist mask, to the surface of the p-type doped second layer 6, followed by a diffusion process. It shows multiple optically active regions beneath the mask 7, having a surrounding second region 2b and at least one third region 2c. As described above, this structure and configuration are generated by the structuring of the applied mask 7. The second dopant b diffuses through the p-type doped second layer 6 and into the active layer 2, forming regions 2a, 2b, and 2c therein. Accordingly, regions 2a, 2b, and 2c in the active layer 2 result in a projected form of the mask or mask segment 7, which is applied to the surface of the p-type doped second layer 6 in the active layer 2.

[0260] Multiple first optical active regions 2a and at least one third region 2c are regions directly projected under the mask or mask segment 7, and due to the mask or mask segment 7b, substantially no second dopant diffuses into this region.

[0261] At least one second region 2b is formed accordingly as a region located in the direct projection below a region, wherein the region is loaded with the second dopant b as a free surface surrounding the mask or mask segment 7. Therefore, in at least one second region 2b, the second dopant b diffuses into the second p-type doped layer 6, diffuses into the active layer 2, and, depending on the doping distribution and process parameters, also partially diffuses into the region adjacent to the n-type doped layer 5 and the active layer 2.

[0262] Therefore, at least one second region 2b has a second dopant b and thus has QWI.

[0263] Apart from the layer structure of semiconductor structure 0 after a mask or mask segment 7 has been applied and the second dopant b has been diffused, Figure 25 The band gap of at least one quantum well in the active layer 2 is shown. The energy of the band gap E in the vertical direction of the figure is shown on a cross-section of the semiconductor structure 0 in the horizontal direction of the figure.

[0264] Viewed from left to right, the energy of bandgap E is constant in the third region 2c and increases in the defined transition region from the third region 2c to the second region 2b. In the second region 2b, the energy of bandgap E again has a constant value, and then decreases in the defined transition region from the second region 2b to the first optical active region 2b, where the energy of bandgap E in the first optical active region 2a is again assumed to be a constant value. In a mirror image, the energy of bandgap E increases in the defined transition region from the first optical active region 2a to the second region 2b, and decreases in the defined transition region from the second region 2b to the third region 2c.

[0265] However, the energy curve of the bandgap E depicted can vary and does not represent the absolute value or ratio between the energies of the bandgap E in the first optical active region 2a and at least one second region 2b. The transition regions between at least one second region 2b and the first optical active region 2a, as well as between at least one second region 2b and at least one third region 2c, can vary and be designed to be both slightly shallower and steeper.

[0266] The decisive factor is that the energy of the bandgap E of the first optical active region 2a and at least one third region 2c is less than the energy of the bandgap E of at least one second region 2b, and the energy of the bandgap E is substantially constant along the circumference of the second region 2a in the first optical active region 2a and at least one second region 2b.

[0267] In the following sections, various devices and apparatuses, as well as methods for their manufacture, processing, and operation, are again listed as examples. The following items illustrate aspects and implementations of the proposed principles and designs that can be combined in various ways. Such combinations are not limited to those given below: 145. A μ-LED, comprising: - The first layer doped with n-type - A second p-type doped layer containing the first dopant. - An active layer, disposed between an n-type doped first layer and a p-type doped second layer, and having at least one quantum well. The active layer is divided into at least two regions. The second region concentrically surrounds the first region, and Wherein, at least one quantum well in the active region has a larger band gap in the second region than in the first region, and In particular, the band gap can be altered through quantum well mixing.

[0268] 146. The μ-LED according to any one of the foregoing items, It also includes a second dopant that is substantially uniformly distributed in the second region.

[0269] 147. The μ-LED according to any one of the foregoing items, In the second region, the second dopant is... - In the second p-type doped layer - In the active layer, and - It is formed at least partially in the region adjacent to the active layer of the n-type doped first layer.

[0270] 148. The μ-LED according to any one of the foregoing items, Among them, at least two regions are formed in a shape that is at least approximately circular.

[0271] 149. The μ-LED according to any one of the foregoing items, The second region exhibits a substantially uniform bandgap variation that is altered by quantum well mixing.

[0272] 150. The μ-LED according to any one of the foregoing items, The first region is essentially free of quantum well mixing.

[0273] 151. The μ-LED according to any one of the foregoing items, The quantum well mixing decreases in the defined transition region from the second region to the first region.

[0274] 152. The μ-LED according to any one of the foregoing items, Its characteristic is that the second dopant is different from the first dopant.

[0275] 153. The μ-LED according to any one of the preceding items, characterized in that the second dopant is formed from the group consisting of at least one of the following elements: Mg, Zn, Cd.

[0276] 154. A μ-LED device comprising: a plurality of μ-LEDs according to any one of the preceding items; a photonic structure arranged on one side of the main radiation direction, particularly featuring any one of the following items; and a contact region on the side opposite to the main radiation direction.

[0277] 155. A μ-LED device having a plurality of μ-LEDs according to any one of the preceding items, wherein a photonic structure is formed on a main radiating side by a periodic arrangement of columnar elements having a first refractive index, the columnar elements being surrounded by a material having a second refractive index, wherein at least some of the columnar elements are located above an active layer, particularly above a first region.

[0278] 156. The μ-LED device according to item 153, wherein at least one of the plurality of μ-LEDs is surrounded by a circumferential reflective structure and, in particular, has the features according to any one of the preceding items.

[0279] 157. The use of a μ-LED in a device, particularly as a semiconductor stack according to any one of the preceding items.

[0280] 158. A method for manufacturing optoelectronic components, particularly μ-LEDs, comprising: - Provides a semiconductor structure having a first layer, particularly n-type doped, a second layer doped with a first dopant, particularly p-type doped, and an active layer disposed therebetween; - A substantially circular diffusion mask is applied to a second layer, particularly a p-type doped layer, to define a first optically active region within the active layer, which is surrounded by a second region of the active layer; and - Quantum well mixing is generated in the second region of the active layer.

[0281] 159. The method according to item 158, wherein the step of generating quantum well mixing includes: - The second dopant is diffused into the second doped layer, particularly the p-type doped layer, into the active layer in the second region, and at least partially into the region of the active layer, particularly the n-type doped layer.

[0282] 160. According to the method of any one of the aforementioned projects, Quantum well mixing occurs only in the second region by applying a diffusion mask, particularly to the p-type doped second layer, and by diffusing the second dopant into the p-type doped second layer, into the active layer in the second region, and at least partially into the region adjacent to the active layer, particularly the n-type doped layer.

[0283] 161. The method according to any one of the foregoing items, The diffusion mask is formed of a dielectric material.

[0284] 162. The method according to any one of the preceding items, characterized in that the second dopant is different from the first dopant.

[0285] 163. The method according to any one of the preceding items, wherein the first layer is p-type doped and the second layer is n-type doped.

[0286] 164. The method according to any one of the preceding items, characterized in that the second dopant is formed from the group consisting of at least one of the following elements: Mg, Zn, Cd.

[0287] 165. A semiconductor structure, comprising: - The first layer doped with n-type - A second layer doped with p-type dopant containing the first dopant. - An active layer, disposed between an n-type doped first layer and a p-type doped second layer, and having at least one quantum well. The active layer of the semiconductor structure is divided into multiple first optical active regions, at least one second region, and at least one third region. In this arrangement, multiple first optical active regions are arranged in a hexagonal pattern, spaced apart from each other, and Wherein, at least one quantum well in the active region has a larger bandgap in at least one second region than the bandgap in the plurality of first optical active regions and at least one third region, and wherein the bandgap is specifically altered by quantum well mixing, and Wherein, at least one second region surrounds a plurality of first optical active regions, and At least one third region is arranged in the space between multiple first optical active regions.

[0288] 166. The semiconductor structure according to any one of the foregoing items, Among them, multiple first optical active regions are formed in a manner that is at least approximately circular.

[0289] 167. The semiconductor structure according to any one of the foregoing items, In this context, multiple second regions concentrically surround one of multiple first optical active regions.

[0290] 168. The semiconductor structure according to any one of the foregoing items, Among them, multiple second regions are formed in a shape that is at least approximately circular.

[0291] 169. The semiconductor structure according to any one of the foregoing items, In this arrangement, multiple third regions are arranged such that each of the multiple third regions is positioned exactly in the middle of the three first optical active regions.

[0292] 170. The semiconductor structure according to any one of the foregoing items, Each of the multiple third regions is at least approximately circular in shape.

[0293] 171. The semiconductor structure described in item 170, Each of the plurality of third regions at least approximately maps the shape of a triangular curve, which is composed of exactly three of the plurality of second regions that are at least approximately circular.

[0294] 172. The semiconductor structure according to any one of the foregoing items, In this process, one of the multiple first optical active regions forms part of an optoelectronic component.

[0295] 173. The semiconductor structure according to any one of the foregoing items, It also includes a second dopant, which is substantially uniformly arranged in at least one second region.

[0296] 174. The semiconductor structure according to any one of the foregoing items, Wherein, the second dopant is in at least one second region - In the second p-type doped layer - In the active layer, and - It is formed at least partially in the region of the n-type doped layer adjacent to the active layer.

[0297] 175. The semiconductor structure according to any one of the foregoing items, In this region, at least one second region has a substantially uniform bandgap that is altered by quantum well mixing.

[0298] 176. The semiconductor structure according to any one of the foregoing items, Among them, multiple first optical active regions and at least one third region have substantially the same bandgap.

[0299] 177. The semiconductor structure according to any one of the foregoing items, Among them, multiple first optical active regions are essentially free of quantum well mixing.

[0300] 178. The semiconductor structure according to any one of the foregoing items, In this region, at least one third region is essentially free of quantum well mixing.

[0301] 179. The semiconductor structure according to any one of the foregoing items, The quantum well mixing is reduced in a defined transition region from at least one second region to multiple first optical active regions.

[0302] 180. The semiconductor structure according to any one of the preceding items, characterized in that the second dopant is different from the first dopant.

[0303] 181. The semiconductor structure according to any one of the preceding items, characterized in that the second dopant is formed from the group consisting of at least one of the following materials: Mg, Zn, Cd.

[0304] 182. The semiconductor structure according to any one of the preceding items further includes a coupled output structure, particularly a photonic structure on one side in the main radiation direction.

[0305] 183. A μ-LED device having a semiconductor structure according to any one of the foregoing or the following items.

[0306] 184. A method for manufacturing a semiconductor structure, comprising: - A semiconductor structure is provided having an n-type doped first layer, a p-type doped second layer doped with a first dopant, and an active layer disposed therebetween; - A mask is applied to a p-type doped second layer to define a plurality of first optical active regions in the active layer, the regions being surrounded by at least one second region of the active layer and defining at least one third region arranged in the space between the plurality of first optical active regions; - Quantum well mixing is generated in at least one second region of the active layer.

[0307] 185. The method for manufacturing a semiconductor structure according to item 184, wherein the step of generating quantum well hybridization includes: - Diffusion of the second dopant into the p-type doped second layer, into the active layer in at least one second region, and at least partially into the region of the n-type doped layer adjacent to the active layer.

[0308] 186. The method for manufacturing a semiconductor structure according to any one of the preceding items, Quantum well mixing occurs only in at least one second region by applying a mask to the p-type doped second layer and by diffusing the first dopant into the p-type doped second layer, into at least one second region, and at least partially into the region of the n-type doped layer adjacent to the active layer.

[0309] 187. The method for manufacturing a semiconductor structure according to any one of the preceding items, In this process, a mask is formed using a mask made of a dielectric material (such as SiO2, Si3N4, etc.).

[0310] 188. The method for manufacturing a semiconductor structure according to any one of the preceding items, characterized in that the second dopant is different from the first dopant.

[0311] 189. A method for manufacturing a semiconductor structure according to any one of the preceding items, characterized in that the second dopant is formed from the group consisting of at least one of the following elements: Mg, Zn, Cd.

[0312] 190. A method for manufacturing a semiconductor structure or optoelectronic component according to any one of the preceding items, particularly for manufacturing a μ-LED according to any one of the preceding items, the method further comprising: A photonic structure, particularly a photonic structure having the features according to any one of the preceding items, is applied to one side of a semiconductor structure or optoelectronic component in the main radiation direction.

[0313] 191. A method for producing an optoelectronic component from a semiconductor structure according to any one of the preceding items, comprising: - Separation, especially separation through etching processes of individual optoelectronic components.

Claims

1. A μ-LED, comprising: -n type doped first layer - A second p-type doped layer containing the first dopant. - An active layer, disposed between an n-type doped first layer and a p-type doped second layer, and having at least one quantum well. The active layer is divided into at least two regions. The second region concentrically surrounds the first region, and Wherein, at least one quantum well in the active region has a larger band gap in the second region than in the first region, and In particular, the band gap can be altered through quantum well mixing.

2. The μ-LED according to claim 1, It also includes a second dopant that is substantially uniformly distributed in the second region.

3. The μ-LED according to claim 1, in, The second dopant is in the second region. -In the second p-type doped layer -In the active layer, and - It is formed at least partially in the region adjacent to the active layer of the n-type doped first layer.

4. The μ-LED according to claim 1, in, At least two regions are formed in a shape that is at least approximately circular.

5. The μ-LED according to claim 1, in, The second region exhibits a essentially uniform bandgap variation altered by quantum well mixing.

6. The μ-LED according to claim 1, in, The first region is essentially devoid of quantum well mixing.

7. The μ-LED according to claim 1, in, Quantum well mixing decreases in the defined transition region from the second region to the first region.

8. The μ-LED according to claim 1, Its features are, The second dopant is different from the first dopant.

9. The μ-LED according to claim 1, characterized in that, The second dopant is formed from the group consisting of at least one of the following elements: Mg, Zn, Cd.

10. A μ-LED device comprising: a plurality of μ-LEDs according to claim 1; a photonic structure arranged on one side of the main radiation direction, particularly featuring any one of the following claims; and a contact region on the side opposite to the main radiation direction.

11. A μ-LED device having a plurality of μ-LEDs according to any one of claims 1, wherein the photonic structure is formed on the main radiating side by a periodic arrangement of columnar elements having a first refractive index, the columnar elements being surrounded by a material having a second refractive index, wherein at least some of the columnar elements are located above the active layer, particularly above a first region.

12. The μ-LED device according to claim 11, wherein, At least one of the multiple μ-LEDs is surrounded by a circumferential reflective structure.

13. A method for manufacturing optoelectronic components, particularly μ-LEDs, comprising: - Provides a semiconductor structure having a first layer, particularly n-type doped, a second layer doped with a first dopant, particularly p-type doped, and an active layer disposed therebetween; - A substantially circular diffusion mask is applied to a second layer, which is p-type doped, to define a first optical active region in the active layer, which is surrounded by a second region of the active layer; as well as - Quantum well mixing is generated in the second region of the active layer.

14. The method according to claim 13, wherein, The steps to produce quantum well mixing include: - The second dopant is diffused into the second doped layer, particularly the p-type doped layer, into the active layer in the second region, and at least partially into the region of the active layer, particularly the n-type doped layer.

15. The method according to claim 13, in, Quantum well mixing occurs only in the second region by applying a diffusion mask, particularly to the p-type doped second layer, and by diffusing the second dopant into the p-type doped second layer, into the active layer in the second region, and at least partially into the region adjacent to the active layer, particularly the n-type doped layer.

16. The method according to claim 13, in, The diffusion mask is formed of dielectric material.

17. The method according to claim 13, characterized in that, The second dopant is different from the first dopant.

18. The method according to claim 13, wherein, The first layer is p-type doped, and the second layer is n-type doped.

19. The method according to claim 13, characterized in that, The second dopant is formed from the group consisting of at least one of the following elements: Mg, Zn, Cd.

20. A semiconductor structure comprising: -n type doped first layer - A second layer doped with p-type doped material, containing the first dopant. - An active layer, disposed between an n-type doped first layer and a p-type doped second layer, and having at least one quantum well. The active layer of the semiconductor structure is divided into multiple first optical active regions, at least one second region, and at least one third region. In this arrangement, multiple first optical active regions are arranged in a hexagonal pattern, spaced apart from each other, and Wherein, at least one quantum well in the active region has a larger bandgap in at least one second region than the bandgap in the plurality of first optical active regions and at least one third region, and wherein the bandgap is specifically altered by quantum well mixing, and Wherein, at least one second region surrounds a plurality of first optical active regions, and At least one third region is arranged in the space between multiple first optical active regions.

21. The semiconductor structure according to claim 20, in, Multiple first optical active regions are formed in a manner that is at least approximately circular.

22. The semiconductor structure according to claim 20, in, Multiple second regions concentrically surround one of multiple first optical active regions.

23. The semiconductor structure according to claim 20, in, Multiple second regions are formed in a manner that is at least approximately circular.

24. The semiconductor structure according to claim 20, in, Multiple third regions are arranged such that each of the multiple third regions is positioned exactly in the middle of the three first optical active regions.

25. The semiconductor structure according to claim 24, in, Each of the multiple third regions is at least approximately circular in shape.

26. The semiconductor structure according to claim 25, in, Each of the plurality of third regions at least approximately maps the shape of a triangular curve, which is composed of exactly three of the plurality of second regions that are at least approximately circular.

27. The semiconductor structure according to claim 20, in, One of the multiple first optical active regions forms part of an optoelectronic component.

28. The semiconductor structure according to claim 20, It also includes a second dopant, which is substantially uniformly arranged in at least one second region.

29. The semiconductor structure according to claim 20, in, The second dopant is in at least one second region -In the second p-type doped layer -In the active layer, and - It is formed at least partially in the region of the n-type doped layer adjacent to the active layer.

30. The semiconductor structure according to claim 20, in, At least one second region has a substantially uniform bandgap that is altered by quantum well mixing.

31. The semiconductor structure according to claim 20, in, Multiple first optical active regions and at least one third region have substantially the same bandgap.

32. The semiconductor structure according to claim 20, in, Multiple first optical active regions are essentially free of quantum well mixing.

33. The semiconductor structure according to claim 20, in, At least one third region is essentially free of quantum well mixing.

34. The semiconductor structure according to claim 20, in, Quantum well mixing is reduced in a defined transition region from at least one second region to multiple first optically active regions.

35. The semiconductor structure according to claim 20, characterized in that, The second dopant is different from the first dopant.

36. The semiconductor structure according to claim 20, characterized in that, The second dopant is formed from the group consisting of at least one of the following materials: Mg, Zn, Cd.

37. The semiconductor structure of claim 20, further comprising a coupled output structure, particularly a photonic structure on one side in the main radiation direction.

38. A method for manufacturing a semiconductor structure, comprising: - Provide a semiconductor structure having an n-type doped first layer, a p-type doped second layer doped with a first dopant, and an active layer disposed therebetween; - A mask is applied to a p-type doped second layer to define a plurality of first optical active regions in the active layer, the regions being surrounded by at least one second region of the active layer and defining at least one third region arranged in the space between the plurality of first optical active regions. - Quantum well mixing is generated in at least one second region of the active layer.

39. The method for manufacturing a semiconductor structure according to claim 38, wherein, The steps to produce quantum well mixing include: - Diffusion of the second dopant into the p-type doped second layer, into the active layer in at least one second region, and at least partially into the region of the n-type doped layer adjacent to the active layer.

40. The method for manufacturing a semiconductor structure according to claim 38, in, Quantum well mixing occurs only in at least one second region by applying a mask to the p-type doped second layer and by diffusing the first dopant into the p-type doped second layer, into at least one second region, and at least partially into the region of the n-type doped layer adjacent to the active layer.

41. The method for manufacturing a semiconductor structure according to claim 38, in, A mask is formed by using a mask made of dielectric material (e.g., SiO2, Si3N4...).

42. The method for manufacturing a semiconductor structure according to claim 38, characterized in that, The second dopant is different from the first dopant.

43. The method for manufacturing a semiconductor structure according to claim 38, characterized in that, The second dopant is formed from the group consisting of at least one of the following elements: Mg, Zn, Cd.

44. A method for manufacturing a semiconductor structure or optoelectronic component according to claim 38, particularly for manufacturing a μ-LED according to any one of claims 1 to 9, the method further comprising: A photonic structure, particularly a photonic structure having the features according to any one of the preceding items, is applied to one side of a semiconductor structure or optoelectronic component in the main radiation direction.

45. A method for producing an optoelectronic component from a semiconductor structure according to claim 38, comprising: - Separation, especially separation through etching processes of individual optoelectronic components.

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