Absorption-reflection integrated electromagnetic surface based on dual-polarization broadband phase reconfigurable unit

Abstract

The invention relates to an absorption-reflection integrated electromagnetic surface based on dual-polarization broadband phase reconfigurable units. The absorption-reflection integrated electromagnetic surface is formed by periodically arranging a plurality of dual-polarization broadband absorption-reflection integrated units with the same structure; the dual-polarization broadband absorbing and reflecting integrated unit is composed of a first wave absorbing layer, a second wave absorbing layer, a lower layer reflection phase regulation and control unit and a direct current feed network. The first wave-absorbing layer and the second wave-absorbing layer are similar in structure, each of the first wave-absorbing layer and the second wave-absorbing layer is composed of a horizontal resonant structure and a vertical resonant structure which are orthogonally placed in spatial position and are in mirror symmetry about the dielectric substrate, and each of the first wave-absorbing layer and the second wave-absorbing layer has the characteristics of medium-frequency broadband wave transmission and high-low frequency wave absorption; the direct current feed network comprises an enabling control line and a bias control line in the orthogonal direction, and independent regulation and control of two polarizations are achieved separately. In a working state, the first wave-absorbing layer and the second wave-absorbing layer have absorption characteristics for low-frequency and high-frequency electromagnetic waves, and the lower reflection phase regulation and control layer can realize random regulation and control of the electromagnetic waves through different feed modes of the direct current feed network.

Description

Technical Field

[0001] This invention belongs to the field of communication technology, and further relates to an integrated absorption-reflection electromagnetic surface based on a dual-polarized broadband phase reconfigurable unit in the field of electromagnetic field and microwave technology. It can be used in reconfigurable antenna design, electromagnetic shielding, anti-interference and full-band stealth radar radome applications. Background Technology

[0002] With the rapid development of modern wireless communication, radar detection, and electronic countermeasures systems, increasingly stringent requirements have been placed on the dynamic control of electromagnetic waves and stealth performance. Reconfigurable reflective array antennas (RRAs), as core components, integrate programmable electromagnetic surfaces and feed antennas to achieve beamforming and scanning, and are widely used in satellite communication, radar systems, and other fields. To improve communication speed and reliability, modern RRA systems need to achieve high gain and large capacity, driving their development towards larger apertures and dual polarization. However, large-aperture antennas inevitably lead to a significant increase in radar cross-section, bringing platform exposure risks and electromagnetic compatibility issues. Therefore, while pursuing high-performance radiation, effectively suppressing out-of-band scattering has become a key challenge in RRA design.

[0003] Currently, feed antenna technology has made significant progress, achieving ultra-wideband signal coverage and providing a superior underlying hardware foundation for systems. Against this backdrop, research focus has naturally shifted to the electromagnetic surface itself, aiming to achieve system-level performance matching broadband feeds. An ideal design concept is to construct an integrated "absorption-reflection-absorption" surface: serving as a high-performance reconfigurable reflector in the desired operating frequency band (in-band), enabling flexible control and beamforming of the radiated / scattered beam; while in the non-operating frequency band (out-of-band), it acts as an absorber to reduce scattering and enhance stealth performance. Existing integrated absorption-reflection designs have encountered significant bottlenecks in their path to practical application. Despite the considerable attention this concept has garnered, most designs have significantly sacrificed the reconfigurable bandwidth of the reflection phase to maintain structural feasibility. These designs often only achieve effective phase control at a single or a few discrete frequency points, and their narrowband characteristics cannot match the operating bandwidth of modern broadband feed antennas. This makes it difficult for the system to simultaneously meet the three core requirements across a wide bandwidth: suppressing out-of-band scattering caused by large-aperture antennas using broadband absorbers, ensuring high-spectral-efficiency communication within the band through broadband phase reconstruction, and improving channel capacity through dual-polarization design. These bottlenecks severely limit the practical application of existing integrated absorber-reflector designs. Summary of the Invention

[0004] To overcome the shortcomings of existing technologies and fill the gap in broadband design of integrated absorption-reflection electromagnetic surfaces, a novel integrated absorption-reflection electromagnetic surface based on a dual-polarized broadband phase-reconfigurable unit is proposed. This aims to address the problem that existing integrated absorption-reflection electromagnetic surface structures cannot achieve broadband reconfigurable reflection performance within the antenna's operating frequency band, thus reducing communication efficiency. It can meet the needs of applications such as reconfigurable antenna design, unidirectional electromagnetic shielding, anti-interference, and full-band stealth radar radomes.

[0005] To achieve the above objectives, the technical solution adopted by the present invention is as follows: An integrated absorption-reflection electromagnetic surface based on a dual-polarized broadband phase reconfigurable unit is composed of multiple dual-polarized broadband absorption-reflection integrated units with the same structure arranged in a periodic manner. The dual-polarized broadband absorption-reflection integrated unit includes a first absorbing layer, a second absorbing layer, a lower reflection phase modulation layer, and a DC power supply network arranged in sequence. The first absorbing layer includes a first horizontal resonant structure and a first vertical resonant structure that are orthogonally placed in space and mirror-symmetrical about the dielectric substrate of the first absorbing layer. The second absorbing layer includes a second horizontal resonant structure and a second vertical resonant structure that are orthogonally placed in space and mirror-symmetrical about the dielectric substrate of the second absorbing layer. Both the first absorbing layer and the second absorbing layer have the characteristics of mid-frequency broadband wave transmission and high and low frequency wave absorption. The DC power supply network includes two sets of orthogonally arranged enable control lines and bias control lines to achieve independent control of horizontal and vertical polarization. In operation, the first and second absorbing layers have absorption characteristics for low-frequency and high-frequency electromagnetic waves. The lower reflection phase control layer can achieve arbitrary control of electromagnetic waves through different feeding methods of the DC feeding network.

[0006] In one embodiment, the first horizontal resonant structure includes a first resonant unit A, a first resonant unit B, and a first intermetallic connection line A, and the first vertical resonant structure includes a first resonant unit C, a first resonant unit D, and a first intermetallic connection line B. The first resonant unit A, the first resonant unit B, and the first intermetallic connection line B are disposed on the front side of the first absorbing layer dielectric substrate, and the first resonant unit C, the first resonant unit D, and the first intermetallic connection line A are disposed on the back side of the first absorbing layer dielectric substrate; the first intermetallic connection line A is perpendicular to the first intermetallic connection line B. The first resonant unit A and the first resonant unit B are connected to the two ends of the first metallized through-hole through the first absorbing layer dielectric substrate and the first metal connection line A. The first resonant unit C and the first resonant unit D are connected to the two ends of the first metallized through-hole through the first absorbing layer dielectric substrate and the first metal connection line B.

[0007] In one embodiment, the first resonant unit A includes a first left capacitive metal strip, a first left resistive element, a left loop-shaped metal resonant structure, and a left spiral metal resonant structure that are electrically connected end to end in sequence; the first resonant unit B includes a first right capacitive metal strip, a first right resistive element, a right loop-shaped metal resonant structure, and a right spiral metal resonant structure that are electrically connected end to end in sequence; the first resonant unit A and the first resonant unit B are centrally symmetrically distributed. The tail of the left-hand spiral metal resonant structure is electrically connected to the left end of the first inter-metal connection line A through a first metallized through-hole A, and the tail of the right-hand spiral metal resonant structure is electrically connected to the right end of the first inter-metal connection line A through a first metallized through-hole A. The first resonant unit C includes a first upper capacitor metal strip, a first upper resistor element, an upper loop-shaped metal resonant structure, and an upper spiral metal resonant structure that are electrically connected end to end in sequence; the first resonant unit D includes a first lower capacitor metal strip, a first lower resistor element, a lower loop-shaped metal resonant structure, and a lower spiral metal resonant structure that are electrically connected end to end in sequence; the first resonant unit C and the first resonant unit D are centrally symmetrically distributed. The tail of the upper spiral metal resonant structure is electrically connected to the upper end of the first intermetallic connecting line B through a first metallized through-hole B, and the tail of the lower spiral metal resonant structure is electrically connected to the lower end of the second intermetallic connecting line B through a first metallized through-hole B.

[0008] In one embodiment, the second horizontal resonant structure includes a second resonant unit A, a second resonant unit B, and a second intermetallic connecting line A; the second vertical resonant structure includes a second resonant unit C, a second resonant unit D, and a second intermetallic connecting line B. The second resonant unit A, the second resonant unit B, and the second intermetallic connection line B are disposed on the back side of the second absorbing layer dielectric substrate, and the second resonant unit C, the second resonant unit D, and the second intermetallic connection line A are disposed on the front side of the second absorbing layer dielectric substrate; the second intermetallic connection line A is perpendicular to the second intermetallic connection line B. The second resonant unit A and the second resonant unit B are connected to the two ends of the second intermetallic connection line A through the second metallized through-hole penetrating the second absorbing layer dielectric substrate. The second resonant unit C and the second resonant unit D are connected to the two ends of the second intermetallic connection line B through the second metallized through-hole penetrating the second absorbing layer dielectric substrate.

[0009] In one embodiment, the second resonant unit A includes a second left capacitor metal strip, a second left resistor element, and a low-frequency metal spiral resonant structure A connected end to end in sequence; the second resonant unit B includes a second right capacitor metal strip, a second right resistor element, a capacitor metal parallel strip structure B, a loop-shaped metal spiral resonant structure B, and a high-frequency metal spiral resonant structure B connected end to end in sequence. The tail of the low-frequency metal spiral resonant structure A is electrically connected to the left end of the second metal connection line A through a second metallized through hole A, and the tail of the high-frequency metal spiral resonant structure B is electrically connected to the right end of the second metal connection line A through a second metallized through hole A. The second resonant unit C includes a second upper capacitor metal strip, a second upper resistor element, and a low-frequency metal spiral resonant structure C connected end to end in sequence; the second resonant unit D includes a second lower capacitor metal strip, a second lower resistor element, a capacitor metal parallel strip structure D, a loop-shaped metal spiral resonant structure D, and a high-frequency metal spiral resonant structure D connected end to end in sequence; the second resonant unit C and the second resonant unit D are centrally symmetrically distributed. The tail of the low-frequency metal spiral resonant structure C is electrically connected to the upper end of the second intermetallic connecting line B through a second metallized through-hole B, and the tail of the high-frequency metal spiral resonant structure D is electrically connected to the lower end of the second intermetallic connecting line B through a second metallized through-hole B.

[0010] In one embodiment, the lower reflection phase control layer includes a ring-shaped metal layer, a first dielectric layer, an air layer, a phase control layer, a second dielectric layer, and a metal ground layer arranged sequentially. The phase control layer connects the metal ground layer and the DC power supply network through different metal feed pillars to achieve the change of the reflection phase.

[0011] In one embodiment, the phase modulation layer includes a centrally slotted annular metal sheet, four phase-change metal sheets, and four PIN diodes. The four phase-change metal sheets are evenly distributed around the centrally slotted annular metal sheet at equal 90° intervals. The positive terminal of each PIN diode is connected to a phase-change metal sheet, and the negative terminal is connected to the centrally slotted annular metal sheet. By switching the PIN diodes on and off, the current distribution on the centrally slotted annular metal sheet is changed, thereby changing the reflection phase.

[0012] In one embodiment, the different metal feed posts include a negative feed post, a left positive feed post, a right positive feed post, an upper positive feed post, and a lower positive feed post. The negative electrode feed post connects the center of the centrally slotted annular metal sheet to the metal ground layer; the left positive electrode feed post, the right positive electrode feed post, the upper positive electrode feed post, and the lower positive electrode feed post are each connected to one of the phase change metal sheets; The left positive electrode feed post and the right positive electrode feed post are located in one polarization direction, and the upper positive electrode feed post and the lower positive electrode feed post are located in another polarization direction. The two metal feed posts in different polarization directions are connected by a metal strip. The left or right positive feed post is connected to the DC feed network to achieve independent feeding with horizontal polarization; the upper or lower positive feed post is connected to the DC feed network to achieve independent feeding with vertical polarization.

[0013] In one embodiment, the second dielectric layer includes an upper dielectric layer, a middle dielectric layer, and a lower dielectric layer; the metal strip includes a horizontally polarized connecting strip and a vertically polarized connecting strip; the horizontally polarized connecting strip connects the left positive electrode feed post and the right positive electrode feed post; the vertically polarized connecting strip connects the upper positive electrode feed post and the lower positive electrode feed post; wherein the lower positive electrode feed post penetrates the upper dielectric layer and is connected to the end of the vertically polarized connecting strip; the right positive electrode feed post penetrates the upper dielectric layer and the middle dielectric layer and is connected to the end of the horizontally polarized connecting strip.

[0014] In one embodiment, the bias control line is a quarter-wavelength sector deflection line. In a set of enable control lines and bias control lines, two sector deflection lines are symmetrical and connected at the apex. An enable control line is provided at the connection point, and an inductor is provided on the enable control line.

[0015] Compared with the prior art, the beneficial effects of the present invention are: First, the operating mode is clean, with low interference between functions. This invention integrates a double-layer "ATA" (Absorb-Transmit-Absorb) broadband absorbing structure with a reconfigurable phase-tuning unit through an innovative modular stacked design. This design effectively reduces electromagnetic coupling between the absorption and phase-reconfiguration functions. Simultaneously, the ring-shaped patch introduced into the unit generates a large capacitance effect, greatly reducing the impact of the PIN diode's own cutoff capacitance on the unit's performance, preserving the unit's performance under ideal conditions to the greatest extent. This gives the invention the advantages of switchable controllability and high isolation between different operating frequency bands over a wide bandwidth.

[0016] Secondly, the reflection phase modulation bandwidth is extremely wide and the performance is stable. Addressing the technical bottleneck of unstable phase response in existing reconfigurable units over a wide bandwidth, the phase modulation unit of this invention employs a unique slotted and ring-shaped capacitor patch composite structure. This design successfully introduces multiple controllable resonant points and widens the phase modulation range of a single resonator through a low-Q value design, enabling the unit to generate a stable and linear reflection phase difference under different diode states. This overcomes the limitation of traditional designs being effective only within a narrow bandwidth, giving this invention the advantage of flexible electromagnetic wave modulation over a wide bandwidth.

[0017] Third, the absorption band edge is steep, resulting in rapid frequency band switching. Because the absorbing layer in this invention employs a resonant structure combining a U-shape and a spiral shape, it cleverly utilizes the series capacitance and distributed inductance generated by the bent lines, achieving a synergistic effect of multiple technical benefits: First, this design physically achieves structural miniaturization; second, it electrically effectively expands the transmission bandwidth of the absorbing layer, providing a prerequisite for broadband phase modulation of the lower reflective unit; finally, this multi-resonant coupling mechanism generates an extremely steep band-stop response, making the transition band between the absorbing frequency band and the reflection modulation frequency band very narrow, thus ensuring rapid and clean switching between operating frequency bands. Attached Figure Description

[0018] Figure 1 This is an exploded view of the integrated absorption-reflection electromagnetic surface structure and the integrated absorption-reflection unit structure of the dual-polarized broadband phase reconfigurable unit of the present invention. Figure 2 This is a schematic diagram of the first absorbing layer structure according to an embodiment of the present invention.

[0019] Figure 3 This is a schematic diagram showing the dimensions of the first absorbing layer in an embodiment of the present invention.

[0020] Figure 4 This is a schematic diagram of the second absorbing layer structure according to an embodiment of the present invention.

[0021] Figure 5 This is a schematic diagram showing the dimensions of the second absorbing layer in an embodiment of the present invention.

[0022] Figure 6 This is a schematic diagram of the lower reflection phase modulation layer structure according to an embodiment of the present invention.

[0023] Figure 7 This is a schematic diagram showing the dimensions of the lower reflection phase modulation layer in an embodiment of the present invention.

[0024] Figure 8 This is a schematic diagram of the phase modulation layer structure according to an embodiment of the present invention.

[0025] Figure 9 This is a schematic diagram showing the dimensions of the phase modulation layer structure according to an embodiment of the present invention.

[0026] Figure 10 This is a schematic diagram of the second dielectric layer structure according to an embodiment of the present invention.

[0027] Figure 11 This is a schematic diagram of the distribution of metal feed columns according to an embodiment of the present invention.

[0028] Figure 12 This is a three-dimensional schematic diagram of the DC power supply network structure according to an embodiment of the present invention.

[0029] Figure 13This is a cross-sectional schematic diagram of the DC power supply network structure according to an embodiment of the present invention.

[0030] Figure 14 This is a schematic diagram showing the dimensions of the DC power supply network according to an embodiment of the present invention.

[0031] Figure 15 This is a reflection coefficient curve of the PIN diode in the on and off states during a simulation experiment according to an embodiment of the present invention.

[0032] Figure 16 This is a simulation experiment of the reflection phase curves of the PIN diode in the on and off states according to an embodiment of the present invention. Detailed Implementation

[0033] The embodiments of the present invention will now be described in detail with reference to the accompanying drawings and examples.

[0034] Reference Figure 1 The overall structure of the absorption-reflection integrated electromagnetic surface based on the dual-polarized broadband phase reconfigurable unit of the present invention will be further described in detail.

[0035] In this embodiment of the invention, the electromagnetic surface is composed of multiple identical dual-polarized broadband absorption and reflection integrated units 1 arranged periodically, with a unit size of [missing information]. p × p =16 mm × 16 mm. Each dual-polarized broadband absorption and reflection integrated unit 1 is mainly composed of a first absorbing layer 11, a second absorbing layer 12, a lower reflection phase control layer 13, and a DC power supply network 14 in sequence.

[0036] The first absorbing layer 11 and the second absorbing layer 12 of the present invention have similar structures, wherein, as shown in the figure... Figure 2 As shown, the first absorbing layer 11 is mainly composed of a first horizontal resonant structure 111 and a first vertical resonant structure 112, which are orthogonally placed in space and mirror-symmetrical about the first absorbing layer dielectric substrate 115. Figure 4 As shown, the second absorbing layer 12 is mainly composed of a second horizontal resonant structure 121 and a second vertical resonant structure 122, which are orthogonally placed in space and mirror-symmetrical about the dielectric substrate 125 of the second absorbing layer. Both the first absorbing layer 11 and the second absorbing layer 12 of this invention have the characteristics of mid-frequency broadband wave transmission and high- and low-frequency wave absorption.

[0037] like Figure 12 As shown, the DC power supply network 14 includes two sets of orthogonally arranged enable control lines 142 and bias control lines 141, which are used to achieve independent control of horizontal and vertical polarization.

[0038] To ensure good absorption performance, in this embodiment of the invention, the distance between the first absorbing layer 11 and the second absorbing layer 12 is [distance missing]. h abs1=7.1 mm, the distance between the second absorbing layer 12 and the lower reflective phase modulation layer 13 h abs1 =12 mm. In operation, the first absorbing layer 11 and the second absorbing layer 12 exhibit absorption characteristics for both low-frequency and high-frequency electromagnetic waves. The lower reflective phase modulation layer 13 can achieve arbitrary modulation of electromagnetic waves through different feeding methods of the DC feed network 14. This invention can meet applications such as reconfigurable antenna design, electromagnetic shielding, anti-interference, and full-band stealth radar radomes.

[0039] Refer again Figure 2 and Figure 3 As shown, the first absorbing layer 11 includes a first horizontal resonant structure 111, a first vertical resonant structure 112, a first pair of metallized vias A113, a first pair of metallized vias B114, and a first absorbing layer dielectric substrate 115. In this embodiment, the first absorbing layer dielectric substrate 115 has a thickness of... h 1 = 0.254 mm, relative permittivity is ε r =3.66, a dielectric material with a loss tangent of tanδ=0.004.

[0040] The first horizontal resonant structure 111 includes a first resonant unit A, a first resonant unit B, and a first intermetallic connection line A1115. The first vertical resonant structure 112 includes a first resonant unit C, a first resonant unit D, and a first intermetallic connection line B1125. The first resonant unit A, the first resonant unit B, and the first intermetallic connection line B1125 are printed or soldered on the front side of the first absorbing layer dielectric substrate 115, where the front side refers to the side away from the lower reflection phase modulation layer 13. The first resonant unit C, the first resonant unit D, and the first intermetallic connection line A1115 are printed or soldered on the back side of the first absorbing layer dielectric substrate 115, where the back side refers to the side closer to the lower reflection phase modulation layer 13. The first intermetallic connection line A1115 is perpendicular to the first intermetallic connection line B1125. The first resonant unit A and the first resonant unit B are connected to the two ends of A113 and the first intermetallic connection line A1115 through a first metallized through-hole penetrating the first absorbing layer dielectric substrate 115. The first resonant unit C and the first resonant unit D are connected to the two ends of the first metallized through-hole through the first absorbing layer dielectric substrate 115 to the first metallized connection line B1125.

[0041] According to the above structure, the first horizontal resonant structure 111 and the first vertical resonant structure 112 of the present invention are orthogonally placed in space and mirror-symmetric about the first absorbing layer dielectric substrate 115. That is, the first horizontal resonant structure 111 is mirror-symmetrically transformed by taking the half-height horizontal reference plane of the first absorbing layer dielectric substrate 115 as the mirror plane, and then rotated 90° in the clockwise direction to obtain the first vertical resonant structure 112.

[0042] Further, the first resonant unit A includes a first left capacitor metal strip 1111, a first left resistor element 1112, a left loop-shaped metal resonant structure 1113, and a left spiral metal resonant structure 1114, which are connected end-to-end in sequence; the first resonant unit B includes a first right capacitor metal strip 1119, a first right resistor element 1118, a right loop-shaped metal resonant structure 1117, and a right spiral metal resonant structure 1116, which are connected end-to-end in sequence; the first resonant unit A and the first resonant unit B are centrally symmetrically distributed. Both the first left capacitor metal strip 1111 and the first right capacitor metal strip 1119 are perpendicular to the first inter-metal connection line A1115, and their lengths are... l 1 = 8 mm, width w 1 = 0.15 mm, the left-hand loop-shaped metal resonant structure 1113 and the right-hand loop-shaped metal resonant structure 1117 are reciprocating bent metal strips, length parameter l 2 = 1.95 mm, width parameter w 2 = 0.1 mm, strip spacing w gap2 =0.16 mm, the first left resistive element 1112 and the first right resistive element 1118 are 71-PNM0402E5000BST1 type resistors. The length parameters of the left spiral metal resonant structure 1114 and the right spiral metal resonant structure 1116 are also specified. l 3_1 =0.9 mm l 3_2 =2.28 mm l 3_3 =1.44mm, width is w 2 = 0.1 mm, strip spacing w gap3_1 =0.34 mm w gap3_2 =0.34 mm. Length parameters of the first inter-metal connection wire A1115 and the first inter-metal connection wire B1125. l 4 = 5.26 mm, width parameter w 4 = 0.1 mm.

[0043] The tail of the left-hand spiral metal resonant structure 1114 is electrically connected to the left end of the first inter-metallic connection line A1115 printed on the back of the first absorbing layer dielectric substrate 115 through a first metallized via A penetrating the first absorbing layer dielectric substrate 115; the tail of the right-hand spiral metal resonant structure 1116 is electrically connected to the right end of the first inter-metallic connection line A1115 through another first metallized via A penetrating the first absorbing layer dielectric substrate 115. All the metal structures and metal vias are connected end-to-end to form a horizontal resonant structure, and the radius of the metallized vias is... r 1 = 0.1 mm.

[0044] Correspondingly, the first resonant unit C includes a first upper capacitive metal strip 1121, a first upper resistive element 1122, an upper loop-shaped metal resonant structure 1123, and an upper spiral metal resonant structure 1124 connected end to end in sequence; the first resonant unit D includes a first lower capacitive metal strip 1129, a first lower resistive element 1128, a lower loop-shaped metal resonant structure 1127, and a lower spiral metal resonant structure 1126 connected end to end in sequence; the first resonant unit C and the first resonant unit D are centrally symmetrically distributed.

[0045] The tail of the upper spiral metal resonant structure 1124 is electrically connected to the upper end of the first inter-metallic connection line B1125 printed on the front side of the first absorbing layer dielectric substrate 115 through a first metallized via B penetrating the first absorbing layer dielectric substrate 115. The tail of the lower spiral metal resonant structure 1126 is electrically connected to the lower end of the second inter-metallic connection line B1125 printed on the front side of the first absorbing layer dielectric substrate 115 through another first metallized via B penetrating the first absorbing layer dielectric substrate 115. All metal structures and metal vias are connected end-to-end to form a horizontal resonant structure. The radius of the metal vias... r 1 = 0.1 mm.

[0046] Refer again Figure 4 and Figure 5 As shown, the second absorbing layer 12 includes a second horizontal resonant structure 121, a second vertical resonant structure 122, a second pair of metallized vias A123, a pair of second metallized vias B124, and a second absorbing layer dielectric substrate 125. In this embodiment, the second absorbing layer dielectric substrate 125 also adopts a thickness of... h 2 = 0.254 mm, relative permittivity is ε r =3.66, a dielectric material with a loss tangent of tanδ=0.004.

[0047] The second horizontal resonant structure 121 is located on the horizontal central axis of the distance unit. dThe lower half of the space, with a diameter of 2 mm, includes a second resonant unit A, a second resonant unit B, and a second intermetallic connection line A1214. The second vertical resonant structure 122 includes a second resonant unit C, a second resonant unit D, and a second intermetallic connection line B1224. The second resonant units A, B, and B1224 are printed or soldered to the back side of the second absorbing layer dielectric substrate 125, while the second resonant units C, D, and A1214 are printed or soldered to the front side of the second absorbing layer dielectric substrate 125. The second intermetallic connection line A1214 is perpendicular to the second intermetallic connection line B1224. The second resonant units A and B are connected to the two ends of the second intermetallic connection line A1214 via a second metallized via penetrating the second absorbing layer dielectric substrate 125, and the second resonant units C and D are connected to the two ends of the second intermetallic connection line B1224 via a second metallized via penetrating the second absorbing layer dielectric substrate 125.

[0048] According to the above structure, the second horizontal resonant structure 121 and the second vertical resonant structure 122 are orthogonally placed in space and mirror-symmetric about the second absorbing layer dielectric substrate 125. That is, the second horizontal resonant structure 121 is mirror-symmetrically transformed by taking the half-height horizontal reference plane of the second absorbing layer dielectric substrate 125 as the mirror plane, and then rotated 90° clockwise to obtain the second vertical resonant structure 122.

[0049] Furthermore, the second resonant unit A includes a second left capacitor metal strip 1211, a second left resistor element 1212, and a low-frequency metal spiral resonant structure 1213A, which are connected end-to-end in sequence. The second resonant unit B includes a second right capacitor metal strip 1219, a second right resistor element 1218, a capacitor metal parallel strip structure B1217, a loop-shaped metal spiral resonant structure B1216, and a high-frequency metal spiral resonant structure B1215, which are connected end-to-end in sequence. The second left resistor element 1212 and the second right resistor element 1218 are both 71-PNM0402E5000BST1 type resistors. The second left capacitor metal strip 1211 and the second right capacitor metal strip 1219 are both perpendicular to the second inter-metal connection line A1214, and their parameters are: length l 5 = 7.5 mm, width w 5 = 0.15 mm. Length parameter of the low-frequency metal spiral resonator structure 1213A. l 6_1 =1.31 mm l 6_2 =2.42 mm l 6_3 =1.59 mm, width parameter w6 = 0.15 mm, strip spacing w gap6_1 =0.36 mm w gap6_2 =0.36 mm; Length parameter of high-frequency metal spiral resonant structure B1215 l 7_1 =3.23 mm l 7_2 =1.2 mm l 7_3 =2.74 mm, width parameter is w 7 = 0.15 mm, strip spacing w gap7_1 =0.4 mm w gap7_2 =2.44 mm; Length parameter of the loop-shaped metal spiral resonant structure B1216 l 8 = 0.6 mm, width parameter is w 8 = 0.15 mm, strip spacing w gap8 =0.37 mm; Length parameter of capacitor metal parallel strip structure B1217 l 9 = 3.6 mm, width parameter is w 9 = 0.15 mm, strip spacing w gap9 =1.25 mm; Length parameter of the second intermetallic connecting wire A1214 l 10 =3.58 mm, width parameter w 10 =0.15 mm.

[0050] The tail of the low-frequency metal spiral resonant structure A1213 is electrically connected to the left end of the second intermetallic connection line A1214 through a second metallized via A penetrating the second absorbing layer dielectric substrate 125. The tail of the high-frequency metal spiral resonant structure B1215 is electrically connected to the right end of the second intermetallic connection line A1214 through another second metallized via A penetrating the second absorbing layer dielectric substrate 125. All metal structures and metal vias are connected end-to-end to form a horizontal resonant structure. The radius of the metal vias... r 1 = 0.1 mm.

[0051] Correspondingly, the second resonant unit C includes a second upper capacitor metal strip 1221, a second upper resistor element 1222, and a low-frequency metal spiral resonant structure C1223, which are connected end to end in sequence; the second resonant unit D includes a second lower capacitor metal strip 1229, a second lower resistor element 1228, a capacitor metal parallel strip structure D1227, a loop-shaped metal spiral resonant structure D1226, and a high-frequency metal spiral resonant structure D1225, which are connected end to end in sequence; the second resonant unit C and the second resonant unit D are centrally symmetrically distributed.

[0052] The tail of the low-frequency metal spiral resonant structure C1223 is electrically connected to the upper end of the second inter-metallic connection line B1224 printed on the back of the second absorbing layer dielectric substrate 125 through a second metallized via B penetrating the second absorbing layer dielectric substrate 125. The tail of the lower spiral metal resonant structure 1126 is electrically connected to the lower end of the second inter-metallic connection line B1224 printed on the back of the second absorbing layer dielectric substrate 125 through another second metallized via B penetrating the second absorbing layer dielectric substrate 125. All metal structures and metal vias are connected end-to-end to form a vertical resonant structure. The radius of the metal vias... r 1 = 0.1 mm.

[0053] Reference Figure 6 and Figure 7 As shown, the lower reflection phase modulation layer 13 includes, in sequence, an annular metal layer 131, a first dielectric layer 132, an air layer 133, a phase modulation layer 134, a second dielectric layer 135, a metal ground layer 136, metal feed pillars 137, and a metal strip 138 connecting the same polarized positive feed pillars. The phase modulation layer 134 connects the metal ground layer 136 and the DC feed network 14 through different metal feed pillars 137, thereby changing the reflection phase. The first dielectric layer 132 has a thickness of... h 3 = 0.254 mm, relative permittivity is ε r =2.2, a dielectric material with a loss tangent of tanδ=0.0009. The second dielectric layer 135 has a thickness of h =3.5 mm, relative permittivity is ε r =2.2, a dielectric material with a loss tangent of tanδ = 0.0009. Air layer thickness 133. h 4 = 1 mm. An annular metal layer 131 is printed on the upper surface of the first dielectric layer 132, and its outer diameter... r ref3_1 =5.2 mm, width w ref3_1=0.8 mm; the phase control layer 134 is printed on the upper surface of the second dielectric layer 135 and is connected to the metal ground layer 136 and the DC power supply network 14 through different metal feed pillars 137 to realize the normal power supply of the diode.

[0054] Reference Figure 8 and Figure 9 As shown, the phase modulation layer 134 includes a centrally slotted annular metal sheet 1341, four phase-change metal sheets 1342, and four PIN diodes 1343. The four phase-change metal sheets 1342 are evenly distributed around the centrally slotted annular metal sheet 1341 at equal 90° intervals, corresponding to two polarization directions. The PIN diodes 1343 are Skyworks SMP 1320-079LF, with their positive terminals connected to one phase-change metal sheet 1342 and their negative terminals connected to the centrally slotted annular metal sheet 1341. By switching the PIN diodes 1343 on and off, the current distribution on the centrally slotted annular metal sheet 1341 is changed, thereby changing the reflection phase. The length parameter of the centrally slotted annular metal sheet 1341 is: l ref2_1 =6 mm l ref2_2 =1.8 mm l ref2_3 =2.15 mm, width parameter is w ref2_1 =0.5 mm w ref2_2 =0.83 mm. The radius parameter of the center-grooved annular metal sheet 1341 is... r ref3_1 =5.2mm r ref3_2 =3.5 mm, width parameter is w ref3_1 =0.8 mm w ref3_2 =0.4 mm w ref3_3 =0.2 mm.

[0055] refer to Figure 10 As shown, the second dielectric layer 135 includes an upper dielectric layer 1351, a middle dielectric layer 1352, and a lower dielectric layer 1353. Their heights are respectively... h up =2.5 mm h mid =0.5 mm h down =0.5 mm.

[0056] refer to Figure 11As shown, the metal feed post 137 includes a negative feed post 1371, a left positive feed post 1372, a right positive feed post 1373, an upper positive feed post 1374, and a lower positive feed post 1375, all with a radius of [missing information]. r ref5 =0.2 mm. The negative electrode feed post 1371 connects the center of the centrally slotted annular metal sheet 1341 and the metal ground layer 136, and each positive electrode feed post is connected to one of the phase change metal sheets 1342. The left positive electrode feed post 1372 and the right positive electrode feed post 1373 are located in one polarization direction, and the upper positive electrode feed post 1374 and the lower positive electrode feed post 1375 are located in another polarization direction. The two metal feed posts 137 in different polarization directions are connected by a metal strip 138.

[0057] The left positive feed post 1372 and the upper positive feed post 1374 penetrate the second dielectric layer 135 and the feed layer dielectric substrate 144, and are connected to the DC feed network 14, respectively realizing independent feeding for horizontal and vertical polarization. Further, the metal strip 138 includes a horizontally polarized connecting strip 1381 and a vertically polarized connecting strip 1382. The lower positive feed post 1375 penetrates the upper dielectric layer 1351 and is connected to the end of the vertically polarized connecting strip 1382; the right positive feed post 1373 penetrates the upper dielectric layer 1351 and the middle dielectric layer 1352 and is connected to the end of the horizontally polarized connecting strip 1381. The horizontally polarized connecting strip 1381 connects the left positive feed post 1372 and the right positive feed post 1373; the vertically polarized connecting strip 1382 connects the upper positive feed post 1374 and the lower positive feed post 1375.

[0058] The metal ground layer 136 has circular openings with coincident axes and radii slightly larger than the metallized through holes at the positions of the left positive electrode feed post 1372 and the lower positive electrode feed post 1375, allowing the metallized through holes to pass through. r ref4 =0.3 mm.

[0059] Reference Figure 12 , Figure 13 and Figure 14 As shown, the DC power supply network 14 includes a bias control line 141, an enable control line 142, an inductor 143, and a power supply layer dielectric substrate 144. The bias control line 141 is a quarter-wavelength sector deflection line. In a set of enable control lines 142 and bias control lines 141, the two sector deflection lines are symmetrical and connected at the apex. An enable control line 142 is placed at the connection point, and an inductor 143 is placed on the enable control line 142. Through its independent design, the horizontal polarization and vertical polarization can be independently controlled by the DC power supply network 14. The radius of the quarter-wavelength sector deflection line is... r ref6=4.4 mm, angle is a =50°. The width of enable control line 142 is w ref4 =0.1 mm. The dielectric substrate 144 of the feed layer has a thickness of... h 5 = 0.2 mm, relative permittivity is ε r =2.2, dielectric material with a loss tangent of tanδ=0.0009. The model number of inductor 143 is 0402DC-5N6XJRW.

[0060] The technical effects of the present invention will be further explained below with reference to simulation experiments: The electromagnetic performance of this invention was verified using the commercial simulation software ANSYS Electronics Suite 2021, and the obtained S-parameter curves are shown below. Figure 15 and Figure 16 As shown. Figure 15 The reflection coefficient (|S11|) curves of the PIN diode in both on and off states under horizontal and vertical polarization are presented. Simulation results show that in the frequency bands of 1.65–4.5 GHz and 9.25–10.44 GHz, |S11| in all states is between 10 dB and 22.5 dB, indicating that the surface is in a highly efficient absorption state in these frequency bands. However, it is in a reflection state in the operating frequency band of 5.2–8.8 GHz. Figure 16 The corresponding reflection phase curves within this frequency band are shown. It can be seen that, within the wide bandwidth of 5.2–8.8 GHz, the reflection phase difference generated when the PIN diode switches between the on and off states is stable between 145° and 215°, exhibiting a stable broadband 1-bit phase response, which provides a key condition for broadband beamforming.

[0061] Although specific embodiments of the present invention have been described in detail with reference to the accompanying drawings, this should not be construed as limiting the scope of protection of this patent. Various modifications and variations that can be made by those skilled in the art without inventive effort within the scope described in the claims still fall within the scope of protection of this patent.

[0062] The above description is merely a preferred embodiment of the present invention and is not intended to limit the present invention in any way. Any simple modifications or equivalent changes made to the above embodiments based on the technical essence of the present invention shall fall within the protection scope of the present invention.

Claims

1. An integrated absorption-reflection electromagnetic surface based on dual-polarized broadband phase reconfigurable units, comprising multiple identical dual-polarized broadband absorption-reflection integrated units (1) arranged periodically, characterized in that, The dual-polarized broadband absorption and reflection integrated unit (1) includes a first absorbing layer (11), a second absorbing layer (12), a lower reflection phase control layer (13), and a DC power supply network (14) arranged sequentially. The first absorbing layer (11) includes a first horizontal resonant structure (111) and a first vertical resonant structure (112) that are orthogonally placed in space and mirror-symmetrical about the first absorbing layer dielectric substrate (115). The second absorbing layer (12) includes a second horizontal resonant structure (121) and a second vertical resonant structure (122) that are orthogonally placed in space and mirror-symmetrical about the second absorbing layer dielectric substrate (125). Both the first absorbing layer (11) and the second absorbing layer (12) have the characteristics of mid-frequency broadband wave transmission and high and low frequency wave absorption. The DC power supply network (14) includes two sets of orthogonally arranged enable control lines (142) and bias control lines (141) to achieve independent control of horizontal and vertical polarization. When in operation, the first absorbing layer (11) and the second absorbing layer (12) have absorption characteristics for low-frequency and high-frequency electromagnetic waves. The lower reflection phase control layer (13) can achieve arbitrary control of electromagnetic waves through different feeding methods of the DC feeding network (14).

2. The integrated absorption-reflection electromagnetic surface based on a dual-polarization broadband phase reconfigurable unit according to claim 1, characterized in that, The first horizontal resonant structure (111) includes a first resonant unit A, a first resonant unit B and a first intermetallic connecting line A (1115), and the first vertical resonant structure (112) includes a first resonant unit C, a first resonant unit D and a first intermetallic connecting line B (1125). The first resonant unit A, the first resonant unit B and the first intermetallic connection line B (1125) are disposed on the front side of the first absorbing layer dielectric substrate (115), and the first resonant unit C, the first resonant unit D and the first intermetallic connection line A (1115) are disposed on the back side of the first absorbing layer dielectric substrate (115); the first intermetallic connection line A (1115) is perpendicular to the first intermetallic connection line B (1125). The first resonant unit A and the first resonant unit B are connected to the two ends of the first metallized via A (113) through the first absorbing layer dielectric substrate (115) and the first intermetallic connection line A (1115). The first resonant unit C and the first resonant unit D are connected to the two ends of the first intermetallic connection line B (1125) through the first metallized via B (114) through the first absorbing layer dielectric substrate (115).

3. The integrated absorption-reflection electromagnetic surface based on a dual-polarization broadband phase reconfigurable unit according to claim 2, characterized in that, The first resonant unit A includes a first left capacitive metal strip (1111), a first left resistive element (1112), a left loop-shaped metal resonant structure (1113), and a left spiral metal resonant structure (1114) connected end to end in sequence; the first resonant unit B includes a first right capacitive metal strip (1119), a first right resistive element (1118), a right loop-shaped metal resonant structure (1117), and a right spiral metal resonant structure (1116) connected end to end in sequence; the first resonant unit A and the first resonant unit B are centrally symmetrically distributed; The tail of the left-hand spiral metal resonant structure (1114) is electrically connected to the left end of the first metallized through-hole A via a ... The first resonant unit C includes a first upper capacitive metal strip (1121), a first upper resistive element (1122), an upper loop-shaped metal resonant structure (1123), and an upper spiral metal resonant structure (1124) connected end to end in sequence; the first resonant unit D includes a first lower capacitive metal strip (1129), a first lower resistive element (1128), a lower loop-shaped metal resonant structure (1127), and a lower spiral metal resonant structure (1126) connected end to end in sequence; the first resonant unit C and the first resonant unit D are centrally symmetrically distributed; The tail of the upper spiral metal resonant structure (1124) is electrically connected to the upper end of the first intermetallic connecting line B (1125) through a first metallized through hole B, and the tail of the lower spiral metal resonant structure (1126) is electrically connected to the lower end of the second intermetallic connecting line B (1125) through a first metallized through hole B.

4. The integrated absorption-reflection electromagnetic surface based on a dual-polarization broadband phase reconfigurable unit according to claim 1, characterized in that, The second horizontal resonant structure (121) includes a second resonant unit A, a second resonant unit B, and a second intermetallic connecting line A (1214), and the second vertical resonant structure (122) includes a second resonant unit C, a second resonant unit D, and a second intermetallic connecting line B (1224). The second resonant unit A, the second resonant unit B, and the second intermetallic connection line B (1224) are disposed on the back side of the second absorbing layer dielectric substrate (125), and the second resonant unit C, the second resonant unit D, and the second intermetallic connection line A (1214) are disposed on the front side of the second absorbing layer dielectric substrate (125); the second intermetallic connection line A (1214) is perpendicular to the second intermetallic connection line B (1224); The second resonant unit A and the second resonant unit B are connected to the two ends of the second intermetallic connection line A (1214) through the second metallized through-hole pair A (123) penetrating the second absorbing layer dielectric substrate (125). The second resonant unit C and the second resonant unit D are connected to the two ends of the second intermetallic connection line B (1224) through the second metallized through-hole pair B (124) penetrating the second absorbing layer dielectric substrate (125).

5. The integrated absorption-reflection electromagnetic surface based on a dual-polarization broadband phase reconfigurable unit according to claim 4, characterized in that, The second resonant unit A includes a second left capacitor metal strip (1211), a second left resistor element (1212), and a low-frequency metal spiral resonant structure (1213) A connected end to end in sequence; the second resonant unit B includes a second right capacitor metal strip (1219), a second right resistor element (1218), a capacitor metal parallel strip structure B (1217), a loop-shaped metal spiral resonant structure B (1216), and a high-frequency metal spiral resonant structure B (1215) connected end to end in sequence. The tail of the low-frequency metal spiral resonant structure A (1213) is electrically connected to the left end of the second metal connection line A (1214) through a second metallized through hole A, and the tail of the high-frequency metal spiral resonant structure B (1215) is electrically connected to the right end of the second metal connection line A (1214) through a second metallized through hole A. The second resonant unit C includes a second upper capacitor metal strip (1221), a second upper resistor element (1222), and a low-frequency metal spiral resonant structure C (1223) connected end to end in sequence; the second resonant unit D includes a second lower capacitor metal strip (1229), a second lower resistor element (1228), a capacitor metal parallel strip structure D (1227), a loop-shaped metal spiral resonant structure D (1226), and a high-frequency metal spiral resonant structure D (1225) connected end to end in sequence; the second resonant unit C and the second resonant unit D are centrally symmetrically distributed; The tail of the low-frequency metal spiral resonant structure C (1223) is electrically connected to the upper end of the second metal connection line B (1224) through a second metallized through hole B, and the tail of the high-frequency metal spiral resonant structure D (1225) is electrically connected to the lower end of the second metal connection line B (1224) through a second metallized through hole B.

6. The integrated absorption-reflection electromagnetic surface based on a dual-polarization broadband phase reconfigurable unit according to claim 1, characterized in that, The lower reflection phase control layer (13) includes an annular metal layer (131), a first dielectric layer (132), an air layer (133), a phase control layer (134), a second dielectric layer (135), and a metal ground layer (136) arranged in sequence. The phase control layer (134) connects the metal ground layer (136) and the DC power supply network (14) through different metal feed pillars (137) to realize the change of reflection phase.

7. The integrated absorption-reflection electromagnetic surface based on a dual-polarization broadband phase reconfigurable unit according to claim 6, characterized in that, The phase control layer (134) includes a centrally slotted annular metal sheet (1341), four phase change metal sheets (1342), and four PIN diodes (1343). The four phase change metal sheets (1342) are evenly distributed around the centrally slotted annular metal sheet (1341) at equal 90° intervals. The positive terminal of one PIN diode (1343) is connected to one phase change metal sheet (1342), and the negative terminal is connected to the centrally slotted annular metal sheet (1341). By switching the PIN diodes (1343) on and off, the current distribution on the centrally slotted annular metal sheet (1341) is changed, thereby changing the reflection phase.

8. The integrated absorption-reflection electromagnetic surface based on a dual-polarization broadband phase reconfigurable unit according to claim 7, characterized in that, The different metal feed posts (137) include a negative feed post (1371), a left positive feed post (1372), a right positive feed post (1373), an upper positive feed post (1374), and a lower positive feed post (1375). The negative electrode feed post (1371) connects the center of the centrally slotted annular metal sheet (1341) to the metal ground layer (136); the left positive electrode feed post (1372), the right positive electrode feed post (1373), the upper positive electrode feed post (1374), and the lower positive electrode feed post (1375) are each connected to one of the phase change metal sheets (1342); The left positive electrode feed post (1372) and the right positive electrode feed post (1373) are located in one polarization direction, and the upper positive electrode feed post (1374) and the lower positive electrode feed post (1375) are located in another polarization direction. The two metal feed posts (137) in different polarization directions are connected by a metal strip (138). The left positive feed post (1372) or the right positive feed post (1373) is connected to the DC feed network (14) to achieve independent feeding with horizontal polarization; the upper positive feed post (1374) or the lower positive feed post (1375) is connected to the DC feed network (14) to achieve independent feeding with vertical polarization.

9. The integrated absorption-reflection electromagnetic surface based on a dual-polarization broadband phase reconfigurable unit according to claim 8, characterized in that, The second dielectric layer (135) includes an upper dielectric layer (1351), a middle dielectric layer (1352), and a lower dielectric layer (1353); the metal strip (138) includes a horizontally polarized connecting strip (1381) and a vertically polarized connecting strip (1382); the horizontally polarized connecting strip (1381) connects the left positive electrode feed post (1372) and the right positive electrode feed post (1373); the vertically polarized connecting strip (1382) connects the upper positive electrode feed post (1374) and the lower positive electrode feed post (1375); wherein the lower positive electrode feed post (1375) penetrates the upper dielectric layer (1351) and is connected to the end of the vertically polarized connecting strip (1382); the right positive electrode feed post (1373) penetrates the upper dielectric layer (1351) and the middle dielectric layer (1352) and is connected to the end of the horizontally polarized connecting strip (1381).

10. The integrated absorption-reflection electromagnetic surface based on a dual-polarization broadband phase reconfigurable unit according to claim 1, characterized in that, The bias control line (141) is a quarter-wavelength sector deflection line. In a set of enable control lines (142) and bias control lines (141), the two sector deflection lines are symmetrical and connected at the apex. An enable control line (142) is set at the connection point. An inductor element (143) is set on the enable control line (142).

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