Phase-change switch with micro heater wrapped with phase-change material and processing technology of phase-change switch

Abstract

The invention relates to the field of phase change switches, and provides a phase change switch with a micro-heater wrapped with a phase change material in order to solve the problems of large fluctuation of a phase change resistance value, reduction of a switching ratio, high energy consumption, slow response and short service life in the prior art, the phase change switch comprises the micro-heater and a functional layer, and the micro-heater comprises a lower bottom part, a side part and an upper bottom part; the lower bottom part is connected with the upper bottom part through the side part, and an accommodating space is reserved between the upper bottom part and the lower bottom part; the functional layer is positioned in the accommodating space; the functional layer comprises a first dielectric layer, a phase change material layer, a phase change layer film electrode and a second dielectric layer which are stacked in sequence; the first dielectric layer abuts against the lower bottom, and the second dielectric layer abuts against the upper bottom. The invention provides a micro heater with a three-side wrapping structure, which can inject heat into a phase change material from multiple directions at the same time, so that the heat conduction distance is greatly shortened, and the heat can be transferred to the whole phase change material layer more quickly and uniformly.

Description

Technical Field

[0001] This invention relates to the field of phase change switches, and more specifically, to a phase change switch with a microheater encapsulating a phase change material and its manufacturing process. Background Technology

[0002] As integrated circuit technology advances towards higher density and lower power consumption, non-volatile electronic switching devices based on phase change materials (such as GeTe) have attracted much attention in fields such as novel memories, reconfigurable logic, and neuromorphic computing due to their high speed, low power consumption, high durability, and good CMOS process compatibility. The core working principle of a phase change switch is to use Joule heating generated by a microheater to drive the phase change material to undergo a reversible transition between an amorphous (high resistance) and crystalline (low resistance) state with significant differences in conductivity, thereby realizing the switching of the circuit between "on" and "off" states.

[0003] In current mainstream device structures, phase change materials are typically deposited as thin films on one side of a microheater, forming a "single-sided heating" mode. Although this structure has mature technology, in the process of evolving towards lower power consumption and higher reliability, the performance degradation caused by uneven phase transition due to uneven thermal field distribution has become increasingly prominent. The specific situation is described below:

[0004] Because heat is injected from only one side, a significant temperature gradient exists within the phase change material along its thickness. This causes localized areas near the heater to reach the phase change temperature and undergo the transition first, while areas further away from the heater remain too cold, resulting in an incomplete and inconsistent transition across the entire target phase change region. Specific consequences include: unstable effective phase change volume, leading to large fluctuations in device resistance and a reduced on / off ratio; high power consumption and slow response: to drive a complete phase change across the entire region, higher voltages or longer pulses must be applied, increasing energy consumption. Furthermore, the longer time required for heat to transfer to the entire phase change region limits the device's set and reset speeds, making it difficult to meet the demands of high-speed circuit applications; decreased reliability: repeated local overheating and thermal stress concentration can easily cause phase change material component segregation, voids, or electrode interface degradation, accelerating device failure and shortening device lifespan.

[0005] Therefore, existing phase-change switching structures based on single-sided heating face severe challenges in terms of energy efficiency, speed, uniformity, and reliability, which restricts their large-scale application in high-performance integrated circuits. There is an urgent need for an innovative thermal management structure to fundamentally optimize the thermal field distribution and achieve more efficient, uniform, and stable phase-change switching. Summary of the Invention

[0006] The purpose of this invention is to provide a phase change switch with a micro-heater encapsulating a phase change material and its processing technology, thereby solving the problems of large resistance fluctuations, reduced switching ratio, high energy consumption, slow response, and shortened lifespan in existing phase change switches due to unilateral heating of the phase change material.

[0007] The embodiments of the present invention are achieved through the following technical solutions:

[0008] A phase change switch with a microheater encapsulating a phase change material includes: a microheater and a functional layer. The microheater includes: a lower bottom, a side portion, and an upper bottom. The lower bottom is connected to the upper bottom through the side portion, and an accommodating space is provided between the upper bottom and the lower bottom. The functional layer is located in the accommodating space. The functional layer includes a first dielectric layer, a phase change material layer, a phase change layer thin film electrode, and a second dielectric layer stacked sequentially. The first dielectric layer abuts against the lower bottom, and the second dielectric layer abuts against the upper bottom.

[0009] Preferably, the phase change switch further includes: a substrate layer, the substrate layer abutting against the side of the lower bottom away from the upper bottom, the side of the substrate layer near the lower bottom being covered with a SiO2 layer, the resistivity of the SiO2 layer being ≥1000Ω·cm.

[0010] Preferably, the phase change layer thin film electrode includes: an input electrode and an output electrode; a gap is left between the input electrode and the output electrode; one end of the input electrode away from the output electrode extends from the accommodating space; one end of the output electrode away from the input electrode extends from the accommodating space.

[0011] Preferably, the phase change layer thin film electrode comprises: a Ti thin film, a Pd thin film, and an Au thin film stacked sequentially; the thickness of the Ti thin film is 10-20 nm, the thickness of the Pd thin film is 10-20 nm, and the thickness of the Au thin film is 500 nm-1 μm; the Ti thin film abuts against the phase change material layer.

[0012] Preferably, the upper bottom sidewall is provided with a first electrode connection portion, and the lower bottom sidewall is provided with a second electrode connection portion; the phase change switch further includes: a heating input electrode and a heating output electrode, the heating input electrode being connected to the first electrode connection portion or the second electrode connection portion, and the heating output electrode being connected to the second electrode connection portion or the first electrode connection portion.

[0013] Preferably, both the heating input electrode and the heating output electrode are made of Au thin film, and the thickness of the Au thin film is 500nm-1μm.

[0014] Preferably, the bottom, top, and sides are all made of W film, the thickness of the top and bottom is 450-550nm, and the thickness of the sides is adapted to the thickness of the functional layer.

[0015] Preferably, both the first dielectric layer and the second dielectric layer are made of Si3N4 thin film, and the thickness of the Si3N4 thin film is 60-100nm.

[0016] Preferably, the phase change material layer is a GeTe thin film with a thickness of 250-350 nm.

[0017] A manufacturing process for the phase-change switch includes the following steps:

[0018] S100. An initial bottom layer is prepared on the surface of the substrate layer by magnetron sputtering, and then the bottom layer of the preset shape is obtained by photolithography and etching processes. The etching process adopts reactive ion etching method and uses a mixed gas including SF6, O2 and Ar, with SF6 as the main reactive gas.

[0019] S200. A Si3N4 thin film is prepared by PECVD as the initial first dielectric layer, and then the first dielectric layer of the preset shape is obtained by photolithography and etching processes.

[0020] S300, Ge and Te are deposited on the first dielectric layer through photolithography and magnetron sputtering processes in sequence to obtain a phase change material layer of a predetermined shape;

[0021] S400, a phase change layer thin film electrode of a predetermined shape is prepared by sequentially performing photolithography, magnetron sputtering and electron beam evaporation processes;

[0022] S500: A Si3N4 thin film is prepared as the initial second dielectric layer by magnetron sputtering, and then a second dielectric layer of a preset shape is obtained by photolithography and etching processes.

[0023] S600: The initial side is prepared by magnetron sputtering, and then the side with the preset shape is obtained by photolithography and etching processes.

[0024] S700: An initial top bottom is prepared by magnetron sputtering, and then a top bottom of a preset shape is obtained by photolithography and etching processes.

[0025] S800 sequentially prepares the heating input electrode and the heating output electrode through photolithography and electron beam evaporation processes.

[0026] The present invention has at least the following beneficial effects:

[0027] This invention provides a three-sided encapsulated microheater that can simultaneously inject heat into a phase change material (PCM) from multiple directions, significantly shortening the heat conduction distance. This allows heat to be transferred more quickly and uniformly throughout the PCM layer, resulting in near-synchronous heating of the material. This significantly reduces the time required for the transition from a crystalline (low-resistance) to an amorphous (high-resistance) or reverse phase, thereby improving the switching speed and enabling the device to achieve a faster phase change rate. Due to its high thermal efficiency, there is no need to overheat the near end to drive the far end of the material, thus achieving a complete phase change with lower energy, reducing energy consumption per operation and minimizing excess heat buildup. Efficient heating allows for shorter heating pulses, reducing ineffective heat diffusion into the surrounding substrate and structure, which is beneficial for device stability and integration density. Non-uniform phase changes can cause localized stress concentration and component migration, which are major causes of material failure after multiple cycles. Three-sided uniform heating promotes a more "volume-based" and consistent phase change in the PCM, resulting in a steeper and more predictable resistance change (on / off ratio). The more uniform thermal field and phase change process can mitigate the effects of heat transfer. The mechanical stress within the material makes the phase change process more reversible, which is expected to significantly increase the cycle life of the device. The uniformly formed amorphous or crystalline region structure is more stable and has stronger resistance to external temperature fluctuations, making the switching state of the device more reliable. The micro-heater with a three-sided encapsulation structure integrates the heater and the phase change material more tightly, forming a self-aligned, highly integrated functional unit. This is equivalent to actively defining the main propagation path of the heat field in multiple directions, which more effectively "focuses" the heat on the target phase change material region and reduces the heat loss to non-target directions. This not only improves thermal efficiency but also improves the thermal crosstalk problem between devices, which is crucial for high-density integration. Although this three-dimensional structure increases manufacturing complexity, it is closer to "surrounding" control of the key phase change material, providing a potential design paradigm for future integration with advanced semiconductor processes (such as heterogeneous integration and three-dimensional stacking integration). Based on this, this invention also proposes a corresponding processing technology scheme for the designed GeTe phase change switch with a micro-heater encapsulating the phase change material structure. Attached Figure Description

[0028] To more clearly illustrate the technical solutions of the embodiments of the present invention, the accompanying drawings used in the embodiments will be briefly introduced below. It should be understood that the following drawings only show some embodiments of the present invention and should not be regarded as a limitation on the scope. For those skilled in the art, other related drawings can be obtained based on these drawings without creative effort.

[0029] Figure 1 This is an exploded view of a phase changer switch.

[0030] Figure 2The figure shows the analysis results of the Ge and Te element content in the GeTe thin film;

[0031] Figure 3 This is a schematic diagram of the first structure of a phase change switch;

[0032] Figure 4 This is a schematic diagram of the second structure of a phase-change switch;

[0033] Figure 5 This is a schematic diagram of the third structure of a phase-change switch;

[0034] Figure 6 This is a comparative cyclic test diagram for a phase changer switch;

[0035] Reference numerals: 1-Micro heater, 101-Lower bottom, 102-Side, 103-Upper bottom, 2-First dielectric layer, 3-Phase change material layer, 4-Phase change layer thin film electrode, 401-Input electrode, 402-Output electrode, 5-Second dielectric layer, 6-Substrate layer, 7-First electrode connection, 8-Second electrode connection, 9-Heating input electrode, 10-Heating output electrode. Detailed Implementation

[0036] To make the objectives, methods, and advantages of the embodiments of the present invention clearer, the methods in the embodiments of the present invention will be clearly and completely described. Obviously, the described embodiments are some embodiments of the present invention, but not all embodiments.

[0037] Example 1: As Figure 1 As shown, a phase change switch encapsulating a phase change material in a microheater includes a microheater 1 and a functional layer. The microheater includes a lower bottom 101, a side portion 102, and an upper bottom 103. The lower bottom 101 is connected to the upper bottom 103 via the side portion 102, and an accommodating space is provided between the upper bottom 103 and the lower bottom 101. The functional layer is located in the accommodating space. The functional layer includes a first dielectric layer 2, a phase change material layer 3, a phase change layer thin film electrode 4, and a second dielectric layer 5, which are stacked sequentially. The first dielectric layer 2 abuts against the lower bottom 101, and the second dielectric layer 5 abuts against the upper bottom 103.

[0038] In the actual implementation process, in order to better demonstrate the spatial relationship and morphological structure of the various components of the phase change switch, Figure 1The middle side portion 102 is longitudinally stretched, and the upper and lower bottom portions 101, the first dielectric layer 2, the phase change material layer 3, the phase change layer thin film electrode 4, the second dielectric layer 5, and the upper bottom portion 103 are all abutted or connected. The accommodating space can be a cuboid space with the lower wall surface of the upper bottom portion 103, the upper wall surface of the lower bottom portion 101, and the wall surface of the side portion 102 adjacent to the functional layer as its surface. This embodiment improves the structure of the conventional micro heater 1 by setting an upper bottom portion 103, a lower bottom portion 101, and a side portion 102, and placing the phase change material layer 3 centrally between the upper bottom portion 103 and the lower bottom portion 101, realizing three-sided wrapping of the phase change material, thereby achieving three-sided heat transfer, which not only improves the heating uniformity of the phase change material layer 3, but also improves the phase change rate of the phase change material layer 3.

[0039] The first dielectric layer 2 and the second dielectric layer 5 have at least two of the following functions:

[0040] 1. Avoid crosstalk between the pulse drive electrical signal through the micro heater 1 and the circuit signal through the phase change material GeTe.

[0041] 2. The Joule heat generated by the microheater 1, triggered by the pulse-driven electrical signal, is rapidly transferred to the phase change material layer 3.

[0042] Example 2: As Figure 1 As shown, in this embodiment, the phase change switch further includes: a substrate layer 6, which abuts against the side of the lower bottom 101 away from the upper bottom 103, and the side of the substrate layer 6 near the lower bottom 101 is covered with a SiO2 layer, the resistivity of which is ≥1000Ω·cm.

[0043] In practice, the SiO2 layer can isolate the electrical signals of the various film layers deposited on the substrate in the phase change switching device.

[0044] Example 3: As Figure 1 As shown, in this embodiment, the phase change layer thin film electrode 4 includes: an input electrode 401 and an output electrode 402; a gap is left between the input electrode 401 and the output electrode 402; one end of the input electrode 401 away from the output electrode 402 extends from the accommodating space; one end of the output electrode 402 away from the input electrode 401 extends from the accommodating space; the phase change layer thin film electrode 4 includes: a Ti thin film, a Pd thin film and an Au thin film stacked sequentially; the thickness of the Ti thin film is 10-20 nm, the thickness of the Pd thin film is 10-20 nm, and the thickness of the Au thin film is 500 nm-1 μm; the Ti thin film abuts against the phase change material layer 3.

[0045] In the specific implementation process, a Pd film is prepared on the Ti film surface as a contact layer to reduce the contact resistance between the conductive film and the phase change material layer 3, and an Au film is used as the conductive layer of the phase change layer thin film electrode 4.

[0046] Example 4: Figure 1 As shown, in this embodiment, the sidewall of the upper bottom 103 is provided with a first electrode connection portion 7, and the sidewall of the lower bottom 101 is provided with a second electrode connection portion 8. The phase change switch further includes a heating input electrode 9 and a heating output electrode 10. The heating input electrode 9 is connected to the first electrode connection portion 7 or the second electrode connection portion 8, and the heating output electrode 10 is connected to the second electrode connection portion 8 or the first electrode connection portion 7. Both the heating input electrode 9 and the heating output electrode 10 are made of Au thin film, and the thickness of the Au thin film is 500nm-1μm. The lower bottom 101, the upper bottom 103, and the side portion 102 are all made of W thin film. The thickness of the upper bottom 103 and the lower bottom 101 is 450-550nm, and the thickness of the side portion 102 is adapted to the thickness of the functional layer. The first dielectric layer 2 and the second dielectric layer 5 are both made of Si3N4 thin film, and the thickness of the Si3N4 thin film is 60-100nm. The phase change material layer 3 is a GeTe thin film with a thickness of 250-350 nm.

[0047] In specific implementation, when the heating input electrode 9 is connected to the first electrode connection part 7, the heating output electrode 10 is connected to the second electrode connection part 8. Conversely, when the heating output electrode 10 is connected to the first electrode connection part 7, the heating input electrode 9 is connected to the second electrode connection part 8. The heating input electrode 9 and the heating output electrode 10 can improve electrode stability and enhance solderability during electrical contact and device packaging testing.

[0048] The thickness of the side portion 102 being adapted to the thickness of the functional layer means that the upper bottom 103 and the lower bottom 101 at both ends of the side portion 102 can abut or connect with the functional layer.

[0049] Example 5: This example provides a manufacturing process for the phase-change switch, including the following steps:

[0050] S100. An initial bottom layer is prepared on the surface of the substrate layer by magnetron sputtering, and then the bottom layer of the preset shape is obtained by photolithography and etching processes. The etching process adopts reactive ion etching method and uses a mixed gas including SF6, O2 and Ar, with SF6 as the main reactive gas.

[0051] S200. A Si3N4 thin film is prepared by PECVD as the initial first dielectric layer, and then the first dielectric layer of the preset shape is obtained by photolithography and etching processes.

[0052] S300, Ge and Te are deposited on the first dielectric layer through photolithography and magnetron sputtering processes in sequence to obtain a phase change material layer of a predetermined shape;

[0053] S400, a phase change layer thin film electrode of a predetermined shape is prepared sequentially through photolithography, magnetron sputtering, and electron beam evaporation; magnetron sputtering is used to prepare Ti and Pd thin films; electron beam evaporation is used to prepare Au thin films;

[0054] S500: A Si3N4 thin film is prepared as the initial second dielectric layer by magnetron sputtering, and then a second dielectric layer of a preset shape is obtained by photolithography and etching processes.

[0055] S600: The initial side is prepared by magnetron sputtering, and then the side with the preset shape is obtained by photolithography and etching processes.

[0056] S700: An initial top bottom is prepared by magnetron sputtering, and then a top bottom of a preset shape is obtained by photolithography and etching processes.

[0057] S800 sequentially prepares the heating input electrode and the heating output electrode through photolithography and electron beam evaporation processes.

[0058] In the specific implementation process, the applicant designed its processing technology in order to obtain the phase change switch provided in Examples 1-4. The reason why the first dielectric layer and the second dielectric layer use different processes is that the high temperature conditions required in the PECVD preparation process will cause an uncontrollable phase change in the GeTe phase change layer. Therefore, in the preparation of the second dielectric layer, this embodiment adopts the magnetron sputtering process.

[0059] Magnetron sputtering, PECVD, photolithography, etching, and electron beam evaporation are all existing technologies. This embodiment only uses existing technologies to prepare each thin film layer and shape it into a predetermined form. In specific implementation, the process parameters can be adaptively adjusted according to the parameters of each layer to obtain the phase change switch with the specific structure provided in this embodiment. The shapes of each layer can be referred to... Figure 1 The configuration can also be customized as needed. The phase change switch structure provided by this invention only limits the spatial relationship, connection relationship, thickness of each layer and material of each layer.

[0060] All etching processes can be performed using reactive ion etching.

[0061] The heating elements in the bottom and top micro-heating layers can use the same structure or different structures, as can be seen in the following test examples.

[0062] Example 1: The manufacturing process of the phase change switch is as follows:

[0063] 1. Substrate preparation: Si wafer substrate, 0.5 mm thick, with a 200 nm SiO2 oxide layer attached to the surface. The oxide layer is polished and has a surface resistivity >1000 Ω·cm.

[0064] 2. Fabrication of the bottom layer of the microheater: Etching process, including fabrication of the microheater thin film, photolithography of the microheater pattern, etching of the microheater thin film and removal of photoresist. The microheater thin film is fabricated using magnetron sputtering. The microheater thin film is a W film with a thickness of 500 nm. The microheater thin film is etched using RIE. The gas used in RIE is a mixture of SF6, O2 and Ar, with a volume ratio of 40:20:100, where SF6 is the main reactant gas.

[0065] 3. Preparation of the first dielectric layer: Etching process, including preparation of dielectric layer film, photolithography of dielectric layer pattern, etching of dielectric layer film and removal of photoresist. PECVD is used to prepare Si3N4 film as the first dielectric layer film with a thickness of 100nm. The dielectric layer film is etched using RIE. The gas used in RIE is a mixture of SF6, O2 and Ar, with a volume ratio of 50:10:200, of which SF6 is the main reactive gas.

[0066] 4. GeTe phase change material layer preparation: The process involves a positive resist stripping process, including photolithography of the GeTe phase change layer pattern, preparation of the GeTe thin film, and removal of the photoresist. GeTe was prepared using magnetron sputtering with a Ge:Te atomic ratio of 56:44. The prepared GeTe thin film was 300 nm thick. EDS (Energy Dispersive Spectroscopy) analysis of the Ge and Te elemental content in the prepared GeTe thin film is shown below. Figure 2 It can be seen that the atomic ratio of Ge to Te is close to 1:1;

[0067] 5. GeTe phase change layer thin film electrode fabrication: positive resist stripping process, including photolithography of electrode layer patterning, preparation of electrode thin film and removal of photoresist. The electrode thin film consists of a three-layer thin film structure: the bottom layer is a Ti thin film with a thickness of 20 nm, followed by a Pd thin film with a thickness of 20 nm on the surface of the Ti thin film, and the top layer is an Au thin film with a thickness of 1 μm. The Ti and Pd thin films are prepared by magnetron sputtering, and the Au thin film is prepared by electron beam evaporation.

[0068] 6. Preparation of the second dielectric layer: Etching process, including preparation of dielectric layer film, photolithography of dielectric layer pattern, etching of dielectric layer film and removal of photoresist. Si3N4 film is prepared by magnetron sputtering as the second dielectric layer film with a thickness of 100nm. The dielectric layer film is etched by RIE.

[0069] 7. Microheater Side Fabrication: Etching process, including fabrication of the microheater thin film, photolithography of the microheater pattern, etching of the microheater thin film and removal of photoresist. The microheater thin film is fabricated using magnetron sputtering. The microheater thin film is a W film with a thickness of 500 nm. The microheater thin film is etched using RIE (Residual Electrode Etching). Microscopic images of the device after this process are shown below. Figure 3 ;

[0070] 8. Microheater Top Fabrication: Etching process, including fabrication of the microheater thin film, photolithography of the microheater pattern, etching of the microheater thin film and removal of photoresist. The microheater thin film is fabricated using magnetron sputtering. The microheater thin film is a W film with a thickness of 500 nm. The microheater thin film is etched using RIE. Microscopic images of the device after this process are shown below. Figure 4 ;

[0071] 9. Fabrication of thin-film electrodes at the input and output terminals of the microheater: A positive resist stripping process was used, including photolithography of the electrode layer pattern, fabrication of the electrode thin film, and removal of the photoresist. Au thin films, 1 μm thick, were used as the input and output electrodes of the microheater and were fabricated using electron beam evaporation. Microscopic images of the complete device are shown below. Figure 5 .

[0072] Comparative Example 1: Phase change switch with a single-sided heater structure.

[0073] Switching Cycle Test Results

[0074]

[0075] Test Description: The "phase change switch with a single-sided heater structure" refers to the GeTe phase change switch corresponding to Example 1, which only contains a single-sided (top and bottom) heater. A probe station was used for testing, with a fixed pulse width (pulse time) of the pulse voltage. A pulse voltage signal was applied to the heater section of the device. By adjusting the peak value of the pulse voltage, a phase change was induced in the GeTe phase change layer, thereby achieving the switching between the "on" and "off" states of the device. The results of the cyclic test are compared as follows... Figure 6The following three conclusions can be drawn from the test results: First, when the pulse width of the pulse voltage is constant, the GeTe phase-change switching device provided in Experimental Example 1 requires a lower pulse voltage peak value, thus the GeTe phase-change switching device provided in Experimental Example 1 has lower power; Second, the GeTe phase-change switching device provided in Experimental Example 1 has a higher switching ratio; Third, during multiple cycles, the resistance value of GeTe in the "on" and "off" states of the GeTe phase-change switching device provided in Experimental Example 1 fluctuates less, thus the switching ratio is more stable, and therefore the reliability of the GeTe phase-change switching device provided in Experimental Example 1 is higher.

[0076] The above are merely preferred embodiments of the present invention and are not intended to limit the invention. Various modifications and variations can be made to the present invention by those skilled in the art. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of the present invention should be included within the scope of protection of the present invention.

Claims

1. A phase change switch with a microheater encapsulating a phase change material, characterized in that, include: Micro heater (1), the micro heater includes: a lower bottom (101), a side (102) and an upper bottom (103); the lower bottom (101) is connected to the upper bottom (103) through the side (102), and there is an accommodating space between the upper bottom (103) and the lower bottom (101); The functional layer is located in the accommodating space; the functional layer includes a first dielectric layer (2), a phase change material layer (3), a phase change layer thin film electrode (4), and a second dielectric layer (5) stacked in sequence; the first dielectric layer (2) abuts against the lower bottom (101), and the second dielectric layer (5) abuts against the upper bottom (103).

2. The phase-change switch according to claim 1, characterized in that, Also includes: The substrate (6) abuts against the side of the lower bottom (101) away from the upper bottom (103), and the side of the substrate (6) near the lower bottom (101) is covered with a SiO2 layer, the resistivity of which is ≥1000Ω·cm.

3. The phase-change switch according to claim 1, characterized in that, The phase change layer thin film electrode (4) includes an input electrode (401) and an output electrode (402); a gap is left between the input electrode (401) and the output electrode (402); one end of the input electrode (401) away from the output electrode (402) extends out from the accommodating space; one end of the output electrode (402) away from the input electrode (401) extends out from the accommodating space.

4. The phase-change switch according to claim 3, characterized in that, The phase change layer thin film electrode (4) includes: a Ti thin film, a Pd thin film and an Au thin film stacked sequentially; the thickness of the Ti thin film is 10-20 nm, the thickness of the Pd thin film is 10-20 nm, and the thickness of the Au thin film is 500 nm-1 μm; the Ti thin film is in contact with the phase change material layer (3).

5. The phase-change switch according to claim 1, characterized in that, The upper bottom (103) has a first electrode connection part (7) on its side wall, and the lower bottom (101) has a second electrode connection part (8) on its side wall; the phase change switch also includes: The heating input electrode (9) and the heating output electrode (10) are connected to the first electrode connection part (7) or the second electrode connection part (8), and the heating output electrode (10) is connected to the second electrode connection part (8) or the first electrode connection part (7).

6. The phase-change switch according to claim 5, characterized in that, Both the heating input electrode (9) and the heating output electrode (10) are made of Au thin film, and the thickness of the Au thin film is 500nm-1μm.

7. The phase-change switch according to any one of claims 1-6, characterized in that, The lower bottom (101), upper bottom (103) and side (102) are all made of W film. The thickness of the upper bottom (103) and lower bottom (101) is 450-550nm, and the thickness of the side (102) is adapted to the thickness of the functional layer.

8. The phase-change switch according to claim 7, characterized in that, Both the first dielectric layer (2) and the second dielectric layer (5) are made of Si3N4 thin film, and the thickness of the Si3N4 thin film is 60-100nm.

9. The phase-change switch according to claim 7, characterized in that, The phase change material layer (3) is a GeTe thin film with a thickness of 250-350 nm.

10. A manufacturing process for the phase-change switch according to any one of claims 1-9, characterized in that, Includes the following steps: S100. An initial bottom layer is prepared on the surface of the substrate layer by magnetron sputtering, and then the bottom layer of the preset shape is obtained by photolithography and etching processes. The etching process adopts reactive ion etching method and uses a mixed gas including SF6, O2 and Ar, with SF6 as the main reactive gas. S200. A Si3N4 thin film is prepared by PECVD as the initial first dielectric layer, and then the first dielectric layer of the preset shape is obtained by photolithography and etching processes. S300, Ge and Te are deposited on the first dielectric layer through photolithography and magnetron sputtering processes in sequence to obtain a phase change material layer of a predetermined shape; S400, a phase change layer thin film electrode of a predetermined shape is prepared by sequentially performing photolithography, magnetron sputtering and electron beam evaporation processes; S500: A Si3N4 thin film is prepared as the initial second dielectric layer by magnetron sputtering, and then a second dielectric layer of a preset shape is obtained by photolithography and etching processes. S600: The initial side is prepared by magnetron sputtering, and then the side with the preset shape is obtained by photolithography and etching processes. S700: An initial top bottom is prepared by magnetron sputtering, and then a top bottom of a preset shape is obtained by photolithography and etching processes. S800 sequentially prepares the heating input electrode and the heating output electrode through photolithography and electron beam evaporation processes.

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