Method for controlled deposition of nitride layer of target nitride on substrate in TLE system and TLE system
By controlling the deposition of nitride layers using a thermal laser epitaxy system, the problems of purity and stoichiometry control in nitride layer deposition in existing technologies have been solved, and high-quality nitride layer growth has been achieved.
CN121844080APending Publication Date: 2026-04-10MAX PLANCK GESELLSCHAFT ZUR FOERDERUNG DER WISSENSCHAFTEN EV
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Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2023-09-14
- Publication Date
- 2026-04-10
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Figure CN121844080A_ABST
Abstract
The invention relates to a method for controlled deposition of a nitride layer (80) of a target nitride (82) on a substrate (70) in a thermal laser epitaxy (TLE) system (100), the target nitride (82) comprising a defined stoichiometric amount and being formed from one or more vaporized and / or sublimated source materials and nitrogen derived from a gaseous nitriding agent (54), the TLE system (100) further comprises a reaction chamber (10) and one or more laser sources (20) for providing a laser beam (22) within the reaction chamber (10). The invention further relates to a TLE system (100) which is designed to carry out the method.
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