Component carrier with shielded cavity and over antenna and non-conductive low-loss high-frequency structure

Abstract

A component carrier (100), the component carrier comprising: a stack (102) comprising a plurality of electrically conductive layer structures (150) and at least one electrically insulating layer structure (152); a cavity (104) formed in the stack (102) and delimited by a circumferential wall; a conductive shield (106) that covers at least a portion of a circumferential wall of the cavity (104); a non-conductive, low loss, high frequency structure (154) over the cavity (104); and an antenna (108) located at least partially above the low-loss high-frequency structure (154).

Description

Technical Field

[0001] The present invention relates to a component carrier and a method for manufacturing a component carrier. Background Technology

[0002] With the increasing functionality of products equipped with component carriers containing one or more electronic components, the continuous miniaturization of these electronic components, and the increasing number of electronic components to be mounted on component carriers, such as printed circuit boards, increasingly powerful array-type components or packages with multiple electronic components are being adopted. These array-type components or packages have multiple contacts or connectors, and the spacing between these contacts is becoming increasingly smaller. Removing heat generated by these electronic components and the component carrier itself during operation has become an increasingly important issue. At the same time, the component carrier must be mechanically stable and electrically reliable to operate even under harsh conditions.

[0003] Furthermore, artifacts may occur when high-frequency signals propagate along the wiring structure of the component carrier. This phenomenon can significantly degrade the overall performance of the communication system. Summary of the Invention

[0004] The purpose of this invention is to provide a component carrier with high performance, particularly in high-frequency signal transmission.

[0005] To achieve the above objectives, a component carrier and a method for manufacturing the component carrier are provided according to the independent claims.

[0006] According to an exemplary embodiment, a component carrier is provided, comprising: a stack including a plurality of electrically conductive layer structures and at least one electrically insulating layer structure; a cavity formed in the stack and defined by a circumferential wall; a conductive shield covering at least a portion of the circumferential wall of the cavity; a non-conductive low-loss high-frequency structure located above the cavity; and an antenna located at least partially above the low-loss high-frequency structure.

[0007] According to another exemplary embodiment of the present invention, a method for manufacturing a component carrier is provided, the method comprising: forming a cavity in a stack comprising at least two electrically conductive layer structures and at least one electrically insulating layer structure, the cavity being defined by a circumferential wall; forming a conductive shield to cover at least a portion of the circumferential wall of the cavity; forming a non-conductive low-loss high-frequency structure above the cavity; and forming an antenna at least partially above the low-loss high-frequency structure.

[0008] According to another exemplary embodiment of the present invention, the component carrier having the above features is used for high-frequency applications, particularly for conducting radio frequency (RF) signals, especially for conducting RF signals with frequencies higher than 1 GHz or even higher than 50 GHz, preferably for conducting RF signals with frequencies of at least 75 GHz.

[0009] In the context of this application, the term "component carrier" may specifically refer to any support structure capable of accommodating one or more components thereon and / or therein to provide mechanical support and / or electrical connection. In other words, a component carrier can be constructed as a mechanical and / or electronic carrier for a component. In particular, a component carrier can be one of a printed circuit board, an organic interposer, and an IC (integrated circuit) substrate. A component carrier can also be a hybrid board composed of different types of component carriers of the above types.

[0010] In the context of this application, the term "stacked structure" may specifically refer to an arrangement of multiple planar layers mounted one on top of the other in a parallel manner.

[0011] In the context of this application, the term "layer structure" may specifically refer to continuous layers, graphical layers, or multiple discontinuous islands in a common plane.

[0012] In the context of this application, the term "cavity" may specifically refer to a recess, groove, or hole (particularly a blind or through hole) extending into and / or into the stack. Preferably, all sides of the cavity may be defined by the layered structure of the stack. The cavity may be configured to function as a waveguide, such as an air-filled waveguide. In the context of this application, the term "waveguide" may specifically refer to a structure that guides waves, such as electromagnetic waves, in a manner that reduces energy loss by confining energy transmission to a finite number of directions, particularly to one direction. Without the physical constraint of a waveguide, the amplitude of a wave attenuates more rapidly as it extends into three-dimensional space. For example, a waveguide may be a hollow conductive recess located in the stack of a component carrier, which can be used to transmit high-frequency radio waves. For example, the cross-section of a metallized recess used as a waveguide (i.e., the cavity with conductive shielding) may be rectangular or circular. For example, a signal may be coupled to a waveguide using a stripline, i.e., a transverse electromagnetic transmission line, such as a planar transmission line. Such planar transmission lines (e.g., striplines or microstrips) can be positioned on one side of the cavity, such as the bottom. Specifically, signals can be coupled between the waveguide and the stripline at the transition point from the waveguide to the stripline. The stripline can be in direct contact with the waveguide or spatially spaced from it. Furthermore, at least one stripline, and particularly multiple striplines, can be associated with the waveguide.

[0013] In the context of this application, the term "conductive shield" can specifically refer to an electrically conductive material (e.g., a metal or conductive polymer, such as copper, titanium, silver, palladium, or gold, and such as graphene) that at least partially lines the circumferential wall that defines the cavity in the stack. Specifically, the conductive shield or coating can partially or preferably completely cover the circumferential wall of the cavity, except for openings (and optionally, second openings). For example, such a conductive shield or coating can be deposited on the circumferential wall of the cavity, for example, by plating or sputtering. The conductive shield can also be a metal grid that can be formed by a plurality of electrically conductive pillars or vias arranged circumferentially around the cavity sidewall. The conductive shield can include at least one layer (e.g., copper only) or at least two layers (e.g., copper and titanium), wherein one or more layers can be oriented perpendicular to the stacking direction.

[0014] In the context of this application, the term "non-conductive low-loss high-frequency structure" can specifically refer to an electrically insulating structure made of a dielectric material, configured to enable the transmission of radio frequency waves with significantly lower loss compared to prepreg (e.g., no more than 80% or even 50% of the loss of a conventional prepreg). The non-conductive low-loss high-frequency structure can be made of a dielectric material such that the radio frequency wave loss is lower than that of the entire solid dielectric material in contact with or surrounding the low-loss high-frequency structure. Preferably, the non-conductive low-loss high-frequency structure can be implemented as an additional cavity, such as an air-filled cavity. However, the non-conductive low-loss high-frequency structure can also be made of a high-frequency optimized solid material (e.g., a low-DF material). Incorporating the non-conductive low-loss high-frequency structure in a stack can improve RF performance compared to embodiments that use a conventional prepreg instead. In particular, the non-conductive low-loss high-frequency structure can be made of a low-DK material. Specifically, the DK value of the non-conductive low-loss high-frequency structure can be less than 3.5 or less than 3.2, preferably in the range of 1.1 to 3.5. More generally, the range can be from 1.1 to 6.5. The DK value of the non-conductive low-loss high-frequency structure can even be less than 10, with preferred values ​​depending on the design; for example, the DK value of the non-conductive low-loss high-frequency structure can be approximately 3. The loss tangent of such a material can exceed 0.05, preferably not exceeding 0.005. Examples of suitable materials include low-loss FR4 grade materials, PTFE-based materials, polyimide materials, plastic or PTFE-based bonded sheet materials, and liquid crystal polymers (LCPs). In another embodiment, the non-conductive low-loss high-frequency structure may include a porous material. The porous material may include air bubbles. In another embodiment, the non-conductive low-loss high-frequency structure may have no filler material, particularly no solid filler material, such as fibers (e.g., glass fibers) or spheres (e.g., glass spheres). Additionally or alternatively, the non-conductive low-loss high-frequency structure can have a thermal conductivity of less than 1 W / mK, particularly in the range of 0.01 W / mK to 0.8 W / mK. Additionally or alternatively, the non-conductive low-loss high-frequency structure can be optically transparent.

[0015] In the context of this application, the term "antenna" may specifically refer to a patterned electrically conductive structure or surface-mounted component (which may be electrically conductive or electrically insulating) configured to receive and / or transmit electromagnetic radiation signals, particularly radio frequency (RF) signals, at, for example, a specific frequency or frequency range. Through such antenna structures, which may be formed in and / or on a stack (particularly as a component of the stack), signals can be coupled into or out of a cavity-based waveguide. The antenna may also be made of a dielectric material with a high DK value, particularly a dielectric resonator antenna (DRA).

[0016] In the context of this application, the term "main surface" of a body can specifically refer to one of the two largest opposing surfaces of the body. Main surfaces can be connected by circumferential sidewalls. The thickness of a body, such as a stack, can be defined by the distance between the two opposing main surfaces.

[0017] According to an exemplary embodiment, a stacked component carrier (such as a PCB or IC substrate) may be provided with a cavity formed within the stack. The circumferential walls of the cavity may be partially covered by a conductive shield (e.g., a metal liner), allowing a low-loss hollow waveguide to be formed from the cavity and its conductive shield. Descriptively, the cavity defined by the conductive shield located in the stack of the component carrier can serve as a Faraday cage, thereby facilitating the transmission of radio frequency signals in a low-loss and high-signal-integrity manner. The top side of the cavity may be coupled to a non-conductive low-loss high-frequency structure (preferably a separate cavity), which can influence a better quality factor, thereby providing higher gain for an antenna located above the low-loss high-frequency structure. This design can achieve high bandwidth, good directivity, and / or high radiation efficiency. An exemplary embodiment may provide a waveguide cavity incorporated in the stack, wherein the antenna is located above the waveguide cavity, and a non-conductive low-loss high-frequency structure (e.g., a separate cavity or region having low DF, RF dielectric) is located between the waveguide cavity and the antenna. Preferably, the non-conductive low-loss high-frequency structure can be positioned such that at least a portion of the low-loss high-frequency structure intersects with the shortest distance between the antenna and the cavity or waveguide. With this structure, losses can be significantly reduced. The upper air cavity combined with the lower waveguide cavity can achieve a better quality factor, thereby providing higher antenna gain. For example, the non-conductive low-loss high-frequency structure—preferably implemented as an additional air cavity—can provide greater bandwidth and can optionally be used as a filter. More generally, the non-conductive low-loss high-frequency structure can improve system performance and reduce losses by replacing non-low-DF dielectric materials that would otherwise be present at the location of the low-loss high-frequency structure with a low-DF dielectric solid or air.

[0018] In particular, the waveguide-antenna configuration of the component carrier according to the exemplary embodiment—having a non-conductive, low-loss, high-frequency structure between the waveguide and the antenna—is fully compatible with very high frequencies, even frequencies above 50 GHz, preferably at least 60 GHz. The combination of the aforementioned features of the cavity with conductive shielding, the upper non-conductive, low-loss, high-frequency structure (such as another cavity), and the antenna further above enables the component carrier to have excellent high-frequency performance.

[0019] In the following sections, further exemplary embodiments of the component carrier and the method will be described.

[0020] A preferred embodiment involves a combination of an air-filled waveguide with one or more dielectric resonator antennas (DRAs) and / or one or more radio frequency lenses.

[0021] In some implementations, the low-loss high-frequency structure includes an additional cavity located above the cavity (see, for example...). Figure 1 The cavity and the other cavity can communicate with each other, especially in gas communication. The arrangement of a patterned electrically conductive layer structure in which two cavities are stacked and connected vertically and form part of a conductive shield between them has proven to be a very suitable design for obtaining excellent high-frequency performance.

[0022] In this embodiment, the additional cavity is air-filled or filled with a low-DK and / or low-DF material. The low-DK and / or low-DF PCB material has a low dielectric constant (particularly below 3.5, or even below 3.2), and extends across the entire width of the component carrier. As mentioned above, the additional cavity can be filled with a porous material (e.g., sponge). The low-DK and / or low-DF material may not contain any filler material, particularly solid filler materials such as fibers (e.g., glass fibers) or spheres (e.g., glass spheres). The term DK specifically refers to the real part of the dielectric constant, while the term DF refers to the imaginary part. A low DK value implies a high wave propagation speed, which can provide advantages in transmitting radio frequency signals through the PCB. When the additional cavity is air-filled or filled with a low-DF material, radio frequency losses can be kept very low.

[0023] In this implementation, the additional cavity is closed on the top side, specifically at least partially enclosed by the antenna. This ensures a very compact spatial arrangement of the cavity, the non-conductive, low-loss, high-frequency structure, and the antenna. Therefore, efficient electromagnetic wave coupling can be achieved, resulting in low loss.

[0024] In an embodiment, the low-loss high-frequency structure comprises a layer of low-DK and / or low-DF material, which extends particularly over the entire width of the stack. Specifically, the non-conductive low-loss high-frequency structure can be implemented as a complete layer of low-DF dielectric extending over the entire width of the component carrier. Preferably, the low-loss high-frequency structure can be made of a material different from the material of the electrically insulating layer structure constituting the stack. More specifically, the low-loss high-frequency structure can be made of a material having a DF value lower than that of the electrically insulating layer structure. This enables low-loss radio frequency characteristics along the propagation path of electromagnetic waves between the cavity, the low-loss high-frequency structure, and the antenna.

[0025] In this implementation, the circumferential walls defining the low-loss high-frequency structure are shielded by a conductive material (such as copper). Coating the sidewalls of the low-loss high-frequency structure with a conductive material confines and guides the electromagnetic field within the structure, thus achieving low loss as the signal propagates through the air. This shielding of the circumferential walls defining the low-loss high-frequency structure can be achieved as a continuous metal lining of the sidewalls, or as a metal grid formed by a plurality of parallel electrically conductive posts, columns, and / or vias. Specifically, two opposite sidewalls of the low-loss high-frequency structure may include the aforementioned shielding or conductive material. Each sidewall can be replaced with a via grid. However, metallized sidewalls offer even better shielding than via grids.

[0026] In this embodiment, the antenna is a slot antenna. However, the antenna can be any type of planar antenna, such as a patch antenna as described below. To couple a signal into or out of a waveguide, a slot can be formed on the waveguide. This slot is not necessarily an antenna; however, it can be. The slot antenna can be formed as a structured metal surface of a stack, preferably a metal foil or a deposited metal layer, having one or more slot-shaped openings in the structured metal surface, wherein the structured metal layer can define the boundaries of the slot antenna. When the structured metal layer is driven by an applied radio frequency signal as an antenna, the slot radiates electromagnetic waves in a manner similar to a dipole antenna. The shape and size of the one or more slots, as well as the driving frequency, determine the radiation pattern. Integrating the slot antenna into a laminated stack is a perfect match because the planar characteristics of the slot antenna correspond to the planar characteristics of the stack. The slot antenna can be implemented as an electrically conductive antenna structure located on at least one electrically insulating layer structure in the at least one electrically insulating layer structure. The opening in the electrically conductive layer structure, located above the top side opening of the conductive shielding aperture, opens outwards towards the outside of the stacked component. This slot-shaped (e.g., rectangular) opening can be configured to facilitate a slotted antenna configuration. More specifically, the opening can be formed as a rectangular slot within the electrically conductive layer structure, thereby forming a slotted antenna. In this case, the opening can also contribute to the functionality of the slotted antenna.

[0027] In another embodiment, the antenna is a dielectric resonator antenna (DRA). This dielectric resonator antenna can be a radio antenna (e.g., one that can be used at microwave frequencies and higher), which may include a block of dielectric material (e.g., a block of ceramic material) with a defined shape and a dielectric resonator mounted on a plane, such as a ground plane. The dielectric resonator antenna may include one or more blocks of dielectric material. The dielectric material may be a low-DK organic polymer material or a low-DF organic polymer material. Radio waves can be introduced from the transmitter into the interior of the resonator material and can excite appropriate electromagnetic modes. The walls of the resonator may be partially transparent to radio waves, thereby allowing radio power to radiate into the surrounding space. In particular, the dielectric resonator antenna may be free of metal components (metal components may introduce losses at high frequencies). Therefore, the dielectric resonator antenna can have low losses and can be very efficient at high microwave and millimeter-wave frequencies. Preferably, the dielectric resonator antenna may be made of a material having a high DK value, for example, at least 6 or at least 8, more preferably at least 10.

[0028] In this embodiment, the antenna is a patch antenna. A patch antenna can represent an antenna with a low profile, and it can be formed on a dielectric surface by patterning one or more electrically conductive layers. The patch antenna can be formed based on a patterned metal layer of a plane (e.g., rectangular, circular, triangular, or having any other geometry). Various options of component carrier technology are fully compatible with this type of planar antenna. Advantageously, multiple patch antenna structures can be stacked through an electrically insulating material between them, thereby enabling the formation of antenna structures supporting multiple frequencies or frequency bands.

[0029] In one embodiment, the patch antenna includes an electrically conductive patch structure located on at least one of the at least one electrically insulating layer structures. For example, the at least one patch antenna is at least partially disposed in a separate cavity forming a non-conductive, low-loss, high-frequency structure. For example, the patch antenna may partially define this separate cavity. However, the patch structure may also be formed on top of a component carrier. Therefore, the patch structure may form part of the outer contour of the component carrier.

[0030] In one embodiment, the patch antenna includes at least one additional electrically conductive patch structure located above the existing electrically conductive patch structure. For example, multiple patch structures are arranged vertically on top of each other as the antenna. Preferably, at least one upper patch structure overlaps or is flush with the bottom patch structure. Different patch structures can be configured to support different frequencies or bands, thereby achieving increased bandwidth. Two, three, or more patch structures can be stacked vertically to further improve antenna functionality.

[0031] In one embodiment, the component carrier includes one or more vertical through-connectors for interconnecting the electrically conductive patch structure with the at least one additional electrically conductive patch structure and extending through at least one of the at least one electrically insulating layer structures. Thus, an electrically conductive layer structure forming a patch structure can be connected to another electrically conductive layer structure on top of it, where another patch structure is formed. The electrically conductive layer structures can be spaced apart from each other by insulating layer structures, and the aforementioned electrical connections can be implemented through one or more vertical through-connectors, such as copper-filled vias. Connecting the two electrically conductive layer structures via vertical through-connectors prevents floating potentials. This can have an additional positive impact on the signal loss and signal integrity of the patch antenna.

[0032] In this implementation, the vertical through-connectors are arranged in a matrix pattern along rows and columns, for example, at equal intervals. This ensures highly uniform electromagnetic wave coupling characteristics across the entire matrix.

[0033] In this implementation, the vertical through-connectors have the same size and / or shape. This simplifies manufacturability and also contributes to uniform electromagnetic wave coupling characteristics across the entire matrix.

[0034] In this embodiment, at least a portion of the patch antenna is disposed within or on a non-conductive low-loss high-frequency structure. Specifically, the patch structure may define at least a portion of the upper main surface of the non-conductive low-loss high-frequency structure, for example, when the non-conductive low-loss high-frequency structure is implemented as a second cavity. This allows for a highly compact design.

[0035] In one embodiment, the patch antenna includes at least a portion of at least one electrically conductive layer structure in the stacked assembly. More specifically, the patch antenna can be structured as a single electrically conductive layer. However, the patch antenna may also have a ground plane (which may be disposed on another layer below). In other words, the patch antenna can be integrally formed with the laminated stacked assembly of the component carrier. This keeps the component carrier small and the signal path short, thereby contributing to low loss and high RF performance.

[0036] In one implementation, the component carrier includes an array of at least two antennas spaced apart from each other in a horizontal plane and / or along a vertical direction. For example, the at least two antennas may be spaced apart along the x-axis or along the y-axis, where the z-axis is the height of the component carrier (e.g., a PCB). The at least two antennas may share a common cavity, i.e., both may be coupled to the same waveguide-type cavity. This allows for high transmission strength, signal transmission diversity, signal transmission redundancy, and / or supports multiple radio frequency (RF) or RF ranges supported by the antenna array. All of these can be achieved with a small footprint. It has been found that arrays of multiple antennas can achieve significantly less warpage compared to a single large antenna. However, the different antennas in the array may also have their own cavities and waveguides, rather than sharing a common cavity.

[0037] In an embodiment, the component carrier includes a frequency filter structure located within and / or on the stack. For example, the frequency filter structure may be arranged at the feed line below the cavity, at the cavity, and / or on top of the low-loss high-frequency structure. Specifically, the filter structure can be implemented through specific configurations of the feed line, the lower cavity, and / or the upper cavity. Descriptively, the geometry of one or more of the above components can be adjusted so that only waves of a specific frequency or frequency range can pass through efficiently. With such a frequency filter, the target frequency or target frequency range can be precisely adjusted, thereby enabling highly accurate signal transmission. Combined with an antenna, a filtered antenna (which may be referred to as a filtenna) can be implemented.

[0038] In implementations, the antenna and frequency filter structures can be combined into a common structure, which may be referred to as a filter antenna. To improve PCB performance by reducing impedance mismatch, size, and losses, the antenna and frequency filter structures can be combined to serve as a multi-functional module performing both filtering and radiation functions.

[0039] In an embodiment, the conductive shield has a coupling slot located at the top end of the cavity (wherein the top end may be defined relative to the stacking direction of the stack), the coupling slot being vertically associated with an antenna (disposed on top of the coupling slot) and / or a non-conductive low-loss high-frequency structure. In the context of this application, the term "coupling slot" may specifically refer to an opening or hole (particularly a through-hole) in the conductive shield located on the top side of the cavity. The hole may extend through the entire thickness of the electrically conductive material of the conductive shield along the thickness direction of the stack. In an example, the opening of the conductive shield located at the top end of the cavity may have a circular and / or edged (e.g., polygonal) shape (in a cross-sectional view of the component carrier). Descriptively, the coupling slot couples electromagnetic waves between the cavity and the non-conductive low-loss high-frequency structure in a clear and direct manner and therefore with low loss.

[0040] In one embodiment, one of the multiple conductive layer structures positioned above the coupling slot is connected to an adjacent conductive layer structure via at least one vertical through-connector. Specifically, the two conductive layer structures can be connected via multiple vertical through-connectors arranged around the coupling slot. Therefore, the conductive layer structure forming the top portion of the conductive shield can be connected to another conductive layer structure above it. The conductive layer structures can be spaced apart by electrically insulating layer structures, and the aforementioned electrical connections can be achieved via one or more vertical through-connectors, such as copper-filled (e.g., laser) vias. Connecting the two conductive layer structures via vertical through-connectors prevents floating potentials. This can have an additional positive impact on signal loss and signal integrity.

[0041] In one embodiment, the top portion of the conductive shield, particularly the top portion of the conductive shield with the coupling groove, is a free-hanging structure (see example...). Figure 1 At least a portion of the free-cantilever structure is not in contact with other layers of the free-cantilever structure on its top and bottom sides. At least one, preferably two, main surfaces of the top portion of the conductive shield may not be in contact with other layers. Coupling slots on the conductive shield may be cantilevered between the cavity and the low-loss high-frequency structure. "Not in contact" on one surface of the conductive shield can mean that air is in direct contact with that surface. However, it can also be a surface of the conductive shield made of a low-DK and / or low-DF material.

[0042] In one embodiment, the top portion of the conductive shield where the coupling groove is formed has a supporting electrical insulation structure, which is arranged on the top surface and / or bottom surface of the top portion of the conductive shield and is arranged to surround the coupling groove (see...). Figure 8 or Figure 14 Alternatively, a supporting electrical conduction structure may be provided on top of the conductive shield or the supporting electrical insulation structure.

[0043] In one embodiment, the component carrier includes an RF lens component, which is surface-mounted on top of the stack. The RF lens component may be an SMD (Surface Mount Device) component, rather than integrated into the stack. By employing this approach, transmitted and / or received RF waves can be focused. This can achieve improved signal transmission by enhancing directivity. As an alternative to a surface-mount RF lens component, another embodiment may integrate the RF lens into the stack.

[0044] In one embodiment, the antenna is formed as part of the stack, for example, at least partially formed on the outer surface of the stack. Advantageously, the antenna can be integrally formed with the stack. Thus, a simple manufacturing process can be combined with efficient electromagnetic coupling and a compact design that integrates the waveguide and antenna within the stack. Exemplary embodiments can provide an integrated solution that combines the waveguide cavity and antenna within the same stack, eliminating the need to assemble separate components and thus avoiding alignment problems.

[0045] However, in other embodiments, the antenna can also be implemented as a surface-mount device, surface-mounted on the top main surface of the stack. For example, this approach might be suitable if the antenna is configured as a dielectric resonator antenna (DRA), see, for example... Figure 7 .

[0046] In one embodiment, the conductive shielding portion has an additional coupling slot located at the upper end of the cavity and parallel to the coupling slot. Therefore, multiple coupling slots can be arranged on the same vertical level.

[0047] In one embodiment, the conductive shield includes a feed slot located at the bottom end of the cavity (wherein the bottom end may be defined relative to the stacking direction). This feed slot, or another opening, may form or be part of a feed structure for feeding electromagnetic signals into the cavity so that the antenna can subsequently transmit radio frequency waves. Preferably, the feed slot is opposite to a coupling slot located at the top end. These two openings in the conductive shield may be functionally compatible and / or geometrically aligned with each other. More generally, these openings may be aligned, misaligned, offset, and / or rotated relative to each other.

[0048] In one embodiment, the electrically conductive layer structure located at the bottom of the cavity includes a feed structure for coupling signals into and / or out of the waveguide. This allows for an electrical transition between the waveguide and the stacked metal.

[0049] In some embodiments, the coupling groove and the feed groove have different dimensions and / or shapes. By using the dimensions (e.g., length and / or width) and / or shapes (especially profiles) of the coupling groove and / or feed groove as design parameters, the electromagnetic wave coupling characteristics of the component carrier can be finely adjusted.

[0050] In one embodiment, the coupling slot and the feed slot are arranged parallel to each other. When the coupling slot and the feed slot are rectangular slots, their longest extension directions can be parallel to each other. This allows for good alignment between the coupling slot and the feed slot, and thus good performance. However, alternatively, the coupling slot and the feed slot can be arranged at an angle to each other.

[0051] In this implementation, the maximum width of at least one of the coupling slot and the feed slot does not exceed 12 mm, and preferably does not exceed 9 mm. This allows for compliance with the requirements of radio frequency waves in the gigahertz range.

[0052] In an embodiment, one of the at least one electrically insulating layer structures defining the top surface side of the low-loss high-frequency structure is a core, for example, with a thickness ranging from 50µm to 600µm, particularly from 100µm to 300µm. The core can be an electrically insulating layer structure made of a fully cured dielectric material, such as that of a component carrier, like a printed circuit board. For example, such a core can be made of FR4 material. The core may include cured resin (e.g., epoxy resin) and reinforcing particles (e.g., glass fiber). Arranging the core on the top side of the non-conductive low-loss high-frequency structure ensures mechanical stability while meeting the requirements of electromagnetic wave transmission. The aforementioned thickness range achieves a suitable balance between mechanical stability and compactness.

[0053] In an embodiment, the component carrier includes a vent that fluidly connects the low-loss high-frequency structure to the external environment of the stack or to another cavity, or facilitates pressure connection between the low-loss high-frequency structure and the external environment of the stack or to another cavity. Hereinafter, fluid connection can refer to establishing gas communication between the low-loss high-frequency structure and the exterior of the stack. Furthermore, pressure connection can refer to the ability to balance the pressure difference between the low-loss high-frequency structure and the exterior of the stack. Additional vents can be formed when air expansion (e.g., during reflow) in the cavity and / or the non-conductive low-loss high-frequency structure (which may be a separate cavity) becomes problematic. This prevents damage to the component carrier due to internal overpressure. For example, pressure communication between the cavity, the non-conductive low-loss high-frequency structure (which may be a separate cavity), and the exterior of the component carrier can be achieved through coupling channels and vents, allowing pressure difference balancing without damaging the component carrier.

[0054] In one implementation, the vent is sealed by a membrane. If additional protection against corrosion and dust ingress into the cavity is required, the coupling groove and vent can be sealed with a flexible or elastic membrane. This still allows pressure exchange.

[0055] In one embodiment, the low-loss high-frequency structure extends vertically over at least two electrically insulating layers of the stack (see, for example...). Figure 2This allows for the spatial extension of the low-loss high-frequency structure in the vertical direction, which can be advantageous for further loss reduction and / or for tuning certain RF coupling characteristics. Alternatively, the low-loss high-frequency structure can also extend vertically over a single electrical insulating layer (see, for example...). Figure 1 This allows for a highly compact design.

[0056] In one embodiment, the vertical extension of the low-loss high-frequency structure is less than the vertical extension of the cavity. Additionally or alternatively, the horizontal extension of the low-loss high-frequency structure may be greater than the horizontal extension of the cavity. Preferably, a deeper and narrower cavity may be combined with a wider and shallower additional cavity (as a preferred embodiment of a non-conductive low-loss high-frequency structure).

[0057] In an embodiment, at least a portion of the sidewalls of the low-loss high-frequency structure is lined with a metallization layer or provided with a metal grid. In the context of this application, the term "metal grid" may specifically refer to an arrangement of vertically extending conductive pillars that laterally surround at least a portion of the low-loss high-frequency structure, thereby suppressing electromagnetic radiation loss via the cavity sidewalls. The metallization layer may continuously cover a portion of the sidewall, or even continuously cover the entire sidewall.

[0058] In this embodiment, the cavity is filled with a dielectric material. Preferably, the dielectric material can be air, such that the cavity can be an air-filled waveguide. As an alternative to air, the cavity can be filled with a sponge and / or a dielectric material (e.g., a low-DK and / or low-DF material).

[0059] In one embodiment, the cavity is configured for frequencies of at least 60 GHz, or even at least 75 GHz. For example, the cavity has a width of less than 5 mm and a height of less than 2.5 mm. In other embodiments, the cavity can be tuned for other frequencies, such as at least 10 GHz or at least 50 GHz. In short, the size of the cavity can be defined by the desired frequency or frequency range of the electromagnetic waves to be processed by the component carrier. On the other hand, the size of a non-conductive, low-loss, high-frequency structure (especially when implemented as an air cavity) can define the achievable degree of loss reduction. While a larger size of such an additional cavity may be advantageous for effectively reducing losses, other considerations, such as the mechanical stability and compact design of the component carrier, may limit the size of this additional cavity.

[0060] In an embodiment, the component carrier comprises a stack of at least one electrically insulating layer structure and at least one electrically conductive layer structure. For example, the component carrier may be a laminate of the aforementioned one or more electrically insulating layer structures and one or more electrically conductive layer structures, particularly a laminate formed by applying mechanical pressure and / or thermal energy to the aforementioned one or more electrically insulating layer structures and one or more electrically conductive layer structures. The aforementioned stack can provide a plate-like component carrier that provides a large mounting surface for other components while being very thin and compact.

[0061] In this implementation, the component carrier is shaped as a plate. This contributes to a compact design in which the component carrier still provides a large base for the component mounted thereon. Furthermore, bare wafers, particularly examples of embedded electronic components, can be easily embedded into thin plates, such as printed circuit boards, due to their small thickness.

[0062] In one embodiment, the component carrier is configured as one of a printed circuit board, a substrate (particularly an IC substrate), and an interposer.

[0063] In the context of this application, the term "printed circuit board" (PCB) can specifically refer to a plate-shaped component carrier formed by laminating multiple electrically conductive layer structures and multiple electrically insulating layer structures, for example, by applying pressure and / or supplying heat. As preferred materials for PCB technology, the electrically conductive layer structures can be made of copper, while the electrically insulating layer structures can include resin and / or glass fiber, i.e., so-called prepreg or FR4 material. The various electrically conductive layer structures can be connected to each other in a desired manner by forming holes through the laminate, for example, by laser drilling or mechanical drilling, and partially or completely filling the holes with an electrically conductive material (particularly copper), thereby forming vias or any other through-hole connections. The filled holes connect the entire stack (through-hole connections extending through multiple layers or the entire stack), or the filled holes can connect at least two electrically conductive layers, referred to as vias. Similarly, optical interconnects can be formed through the various layers of the stack to receive electro-optical circuit boards (EOCBs). In addition to being one or more components that can be embedded in a printed circuit board, printed circuit boards are typically configured to house one or more components on one main surface or two opposing main surfaces of the board-shaped printed circuit board. The one or more components can be soldered to the respective main surfaces. The dielectric portions of the PCB may include resin with reinforcing fibers (such as glass fiber).

[0064] In the context of this application, the term "substrate" may specifically refer to a small component carrier. A substrate is a relatively small component carrier relative to a PCB, on which one or more components can be mounted, and which can serve as a connection medium between one or more chips and another PCB. For example, a substrate may have approximately the same dimensions as the components (particularly electronic components) to be mounted thereon (e.g., in the case of chip-scale package (CSP)). More specifically, a substrate can be understood as a carrier for electrical connections or electrical networks, and a component carrier with a relatively high density of lateral and / or vertically arranged connectors, comparable to a printed circuit board (PCB). Lateral connectors are, for example, conductive paths, while vertical connectors may be, for example, drilled holes. These lateral and / or vertical connectors are arranged within the substrate and can be used to provide electrical, thermal, and / or mechanical connections between accommodated or unaccommodated components (e.g., bare wafers), particularly IC chips, and printed circuit boards or intermediate printed circuit boards. For brevity, the term "substrate" also includes "IC substrate". The dielectric portion of the substrate may include a resin having reinforcing particles (e.g., reinforcing spheres, particularly glass spheres).

[0065] The substrate or interlayer may include or be composed of at least one of the following: glass; silicon (Si); and / or an image-enhancing or dry-etchable organic material, such as an epoxy-based laminate (e.g., an epoxy-based laminate film); or a polymer compound (which may or may not include photosensitive and / or thermosensitive molecules), such as polyimide or polybenzoxazole.

[0066] In one embodiment, the at least one electrically insulating layer structure comprises at least one of the following: resins or polymers, such as epoxy resins, cyanate ester resins, benzocyclobutene resins, bismaleimide triazine resins, polyphenylene derivatives (e.g., based on polyphenylene ether, PPE), polyimide (PI), polyamide (PA), liquid crystal polymers (LCP), polytetrafluoroethylene (PTFE), and / or combinations thereof. Reinforcing layer structures, such as those made of glass (multilayer glass), such as meshes, fibers, spheres, or other types of filler particles, can also be used to form composite materials. The semi-cured resin combined with the reinforcing agent, such as fibers impregnated with the aforementioned resins, is called a prepreg. These prepregs are typically named according to their properties, such as FR4 or FR5, which describe their flame-retardant properties. While prepregs, particularly FR4, are generally preferred for rigid PCBs, other materials, particularly epoxy-based laminates (e.g., laminated films) or photosensitive dielectrics, can also be used. For high-frequency applications, high-frequency materials such as polytetrafluoroethylene, liquid crystal polymers, and / or cyanate ester resins may be preferred. In addition to these polymers, low-temperature co-fired ceramics (LTCC) or other low, very low or ultra-low DK materials can be used as electrical insulation structures in component carriers.

[0067] In an embodiment, the at least one electrically conductive layer structure comprises at least one of the following: copper, aluminum, nickel, silver, gold, palladium, tungsten, and magnesium. While copper is generally preferred, other materials or their coating schemes, particularly those coated with superconducting materials or conductive polymers, are also possible, such as graphene or poly(3,4-ethylenedioxythiophene) (PEDOT).

[0068] At least one component may be selected from the following: non-electrically conductive inlays, electrically conductive inlays (e.g., metallic inlays, preferably copper or aluminum), heat transfer units (e.g., heat pipes), optical guiding elements (e.g., optical waveguides or optical conductor connectors), electronic components, or combinations thereof. The inlay may be, for example, a metal block (IMS inlay) with or without an insulating material coating, which may be embedded or surface-mounted for heat dissipation purposes. Suitable materials are defined by their thermal conductivity, which should be at least 2 W / mK. Such materials are typically based on, but not limited to, metals, metal oxides, and / or ceramics, such as copper, alumina (Al₂O₃), or aluminum nitride (AlN). Other geometries with increased surface area are also frequently used to improve heat exchange capacity. In addition, components can be active electronic components (having at least one implemented pn junction), passive electronic components such as resistors, inductors, or capacitors, electronic chips, storage devices (e.g., DRAM or another data memory), filters, integrated circuits (e.g., field-programmable gate arrays (FPGAs), programmable array logic (PALs), general-purpose array logic (GALs), and complex programmable logic devices (CPLDs)), signal processing components, power management components (e.g., field-effect transistors (FETs), metal-oxide-semiconductor field-effect transistors (MOSFETs), complementary metal-oxide-semiconductor (CMOS) transistors, junction field-effect transistors (JFETs), or insulators. Gate field-effect transistors (IGFETs), all based on semiconductor materials such as silicon carbide (SiC), gallium arsenide (GaAs), gallium nitride (GaN), gallium oxide (Ga2O3), indium gallium arsenide (InGaAs), and / or any other suitable inorganic compound, are used in optoelectronic interface elements, light-emitting diodes, optocouplers, voltage converters (e.g., DC / DC or AC / DC converters), cryptographic components, transmitters and / or receivers, electromechanical transducers, sensors, actuators, microelectromechanical systems (MEMS), microprocessors, capacitors, resistors, inductors, batteries, switches, cameras, antennas, logic chips, and energy harvesting units. However, other components can be embedded in component carriers. For example, magnetic elements can be used as components. Such magnetic elements can be permanent magnets (e.g., ferromagnetic, antiferromagnetic, multiferroic, or ferrimagnetic elements, such as ferrite cores) or paramagnetic elements. However, components can also be IC substrates, interposers, or other component carriers, such as those in a board-in-board configuration. Components may be surface-mounted onto a component carrier and / or embedded within the component carrier. Furthermore, other components, particularly those that generate and emit electromagnetic radiation and / or are sensitive to electromagnetic radiation propagating from the environment, may also be used as components.

[0069] In one embodiment, the component carrier is a laminated component carrier. In this embodiment, the component carrier is a multilayered composition that is stacked and connected together by applying pressure and / or heat.

[0070] After the internal layer structure of the component carrier has been treated, one or more additional electrically insulating and / or electrically conductive layer structures can be used to cover one main surface or both opposite main surfaces of the treated layer structure in a symmetrical or asymmetrical manner (particularly by lamination). In other words, stacking can continue until the desired number of layers is obtained.

[0071] After the stacked structure of the electrical insulation layer and the electrical conductivity layer is formed, the surface of the obtained layer structure or component carrier can be treated.

[0072] Specifically, regarding surface treatment, an electrically insulating solder resist can be applied to one or both opposing main surfaces of the laminate or component carrier. For example, this solder resist can be formed over the entire main surface, and the resist layer can then be patterned to expose one or more electrically conductive surface portions that will be used to electrically connect the component carrier to electronic peripherals. The surface portions of the component carrier still covered with solder resist, particularly those containing copper, can be effectively protected against oxidation or corrosion.

[0073] Regarding surface treatment, a surface treatment portion can also be selectively applied to the exposed electrically conductive surface portion of the component carrier. This surface treatment portion can be an electrically conductive covering material on the exposed electrically conductive layer structure (e.g., pads, conductive traces, etc., particularly including or made of copper) on the surface of the component carrier. If this exposed electrically conductive layer structure is not protected, the exposed electrically conductive component carrier material (especially copper) may be oxidized, resulting in lower reliability of the component carrier. The surface treatment portion can then be formed as a joint between, for example, a surface-mounted component and the component carrier. The surface treatment portion functions to protect the exposed electrically conductive layer structure (especially copper circuitry) and enables a connection process with one or more components, for example, by soldering. Examples of suitable materials for the surface treatment portion are organic solderable corrosion inhibitors (OSP), electroless nickel immersion gold (ENIG), electroless nickel immersion palladium immersion gold (ENIPIG), gold (especially hard gold), electroless tin, nickel-gold, nickel-palladium, etc.

[0074] The above-defined aspects and other aspects of the present invention will become apparent from the examples of embodiments described below, and will be explained with reference to these examples of embodiments. Attached Figure Description

[0075] Figure 1 A cross-sectional view of a component carrier according to an exemplary embodiment of the present invention is shown.

[0076] Figure 2 A cross-sectional view of a component carrier according to another exemplary embodiment of the present invention is shown.

[0077] Figure 3 A cross-sectional view of a component carrier according to another exemplary embodiment of the present invention is shown.

[0078] Figure 4 A cross-sectional view of a component carrier according to another exemplary embodiment of the present invention is shown.

[0079] Figure 5 A cross-sectional view of a component carrier according to another exemplary embodiment of the present invention is shown.

[0080] Figure 6 A cross-sectional view of a component carrier according to another exemplary embodiment of the present invention is shown.

[0081] Figure 7 A cross-sectional view of a component carrier according to another exemplary embodiment of the present invention is shown.

[0082] Figure 8 A cross-sectional view of a component carrier according to another exemplary embodiment of the present invention is shown.

[0083] Figure 9 A cross-sectional view of a component carrier according to another exemplary embodiment of the present invention is shown.

[0084] Figure 10 A cross-sectional view of a component carrier according to another exemplary embodiment of the present invention is shown.

[0085] Figure 11 A plan view of a component carrier according to an exemplary embodiment of the present invention is shown.

[0086] Figure 12 A plan view of a component carrier according to another exemplary embodiment of the present invention is shown.

[0087] Figure 13 A plan view of a component carrier according to another exemplary embodiment of the present invention is shown.

[0088] Figure 14 A cross-sectional view of a component carrier according to another exemplary embodiment of the present invention is shown.

[0089] Figure 15 A cross-sectional view of a component carrier according to another exemplary embodiment of the present invention is shown.

[0090] Figure 16 A cross-sectional view of a component carrier according to another exemplary embodiment of the present invention is shown. Detailed Implementation

[0091] The illustrations in the accompanying drawings are schematic. In different drawings, similar or identical elements are given the same reference numerals.

[0092] Before referring to the accompanying drawings, exemplary embodiments will be described in further detail, and some basic considerations that the exemplary embodiments of the present invention were developed based on these considerations will be summarized.

[0093] The push towards higher frequencies requires solutions that optimize loss performance and reduce structural size at the PCB level. However, conventional approaches primarily rely on molded polymer-based antennas (e.g., gapped antennas) that are subsequently metallized. These antennas are then assembled onto the PCB, thus requiring assembly and interconnect technologies.

[0094] According to an exemplary embodiment, the component carrier (e.g., a printed circuit board, PCB) can be formed based on a laminated stack, i.e., a stack of layers connected by pressure and / or heat. A cavity can be formed in the stack as a hollow volume portion, defined by circumferential walls (which may include side walls, bottom walls, and top walls). The circumferential walls can be partially lined by electrically conductive shielding to enhance electromagnetic wave transmission. On the top side of the shielding, a non-conductive, low-loss high-frequency structure (preferably a separate cavity, e.g., an additional air cavity wider than the cavity in the lateral direction) can be provided. An antenna can then be positioned above the non-conductive, low-loss high-frequency structure. This component carrier is easy to manufacture and exhibits advantageous performance in terms of electromagnetic coupling. Furthermore, other advantages can be achieved, such as high bandwidth, well-defined directivity, and / or high radiation efficiency. Therefore, a component carrier with excellent high-frequency performance can be obtained. In particular, the addition of non-conductive, low-loss, high-frequency structures can contribute to a better quality factor, thereby resulting in higher antenna gain.

[0095] According to exemplary embodiments, a component carrier with a complex overlay can be provided, which is particularly suitable for use in conjunction with electronic components (e.g., semiconductor wafers) that can be embedded within the overlay to further improve the overall performance of the RF system. The electronic component can be configured to generate and / or process high-frequency signals. Furthermore, additional functionality, such as a filtering antenna, can be added to the overlay. Advantageously, exemplary embodiments can combine different technologies with the embedded waveguide to achieve superior overall RF performance. This can allow for improved overall performance of the RF system, particularly for millimeter-wave applications and higher frequencies. Therefore, combining with different types of antennas can achieve improved or even optimized RF performance to obtain higher gain, directivity, and additional features, such as filtering and low-loss feed.

[0096] Exemplary implementations can provide antennas, particularly filtered antennas (which may be referred to as filtennas), using PCB technology. At the PCB level, various antenna technologies (such as patch antennas, horn antennas, DRA antennas, slot antennas, and optional high-frequency radiating lenses) can be used with very low loss by utilizing air-filled waveguides embedded within the PCB for feeding. To further reduce size and improve performance, RFICs (Radio Frequency Integrated Circuits) can be embedded in the stack. Antenna arrays consisting of multiple antennas can also be implemented to further enhance RF functionality (e.g., supported frequency ranges or different supported frequency ranges). In particular, one or more high-gain antennas and / or filtered antennas of the aforementioned types can be combined in or embedded within an air-filled waveguide formed using PCB technology. The air-filled waveguide itself can be a filter, and a filtered antenna can be formed by using an antenna located on top of it.

[0097] Exemplary implementations can facilitate the use of high-gain antennas fed by low-loss feedlines to improve or even optimize the overall performance of RF systems and add functionality such as filtering antennas. The antenna (particularly the filtering antenna) can be fed by an embedded air-filled waveguide, allowing for very low feed loss. RF signals can be fed into the embedded air-filled waveguide through openings in the waveguide. For example, signals can be transmitted from surface-mount device-type integrated circuits (SMD ICs), embedded integrated circuits (ICs), and / or through one or more external connectors. On the other side of the embedded air-filled waveguide, RF signals can also be fed to the antenna through openings (such as coupling slots to the antenna layer). Advantageously, filtering can be achieved by arranging vias (or other vertical through-connectors) between the coupling slot and the antenna structure. To reduce the loss of the filtering antenna, a portion of the dielectric material can be removed, thereby forming an air cavity beneath the antenna. One or more antennas can be implemented, for example, as patch antennas, slot antennas, DRA antennas, and / or horn antennas. One or more antennas can be implemented in a PCB, and more specifically, one or more antennas can be integrated into a PCB stack. If higher directivity is required, an RF lens can be implemented on the antenna (e.g., the RF lens is attached as a separate component). Furthermore, a DRA can be attached instead of other antenna types, thereby achieving higher bandwidth. The corresponding concept of removing dielectric material can be used to implement air-cavity supported patch antennas. This can improve the antenna gain. In addition, the aforementioned concepts can also be used to design and implement antenna arrays.

[0098] In implementations, low-DK materials or polymers may be inserted into the cavity and / or additional cavities to provide higher bandwidth. Alternatively, the cavity and / or additional cavities may also be air cavities.

[0099] According to a preferred embodiment, a component carrier is provided, comprising a stack having at least two electrically conductive layer structures and at least one electrically insulating layer structure. A cavity (which may be configured as a waveguide) may be formed within the stack. Furthermore, a signal modulator unit (e.g., an additional air cavity or a structure made of a low-DK material) may be provided, which can be formed as a non-conductive, low-loss, high-frequency structure. Additionally, the component carrier may include an antenna. Advantageously, the signal modulator unit may be located between the cavity and the antenna and / or associated with both the cavity and the antenna. Furthermore, the component carrier may also include one or more other components, such as one or more semiconductor-based components, such as a processor and / or memory.

[0100] Advantageously, the antenna can be located on a surface area of ​​the stack. Alternatively, at least a portion of the antenna can be embedded. A coupling slot can be located between the cavity and the signal modulator unit. Preferably, the coupling slot can physically connect the cavity and the signal modulator, and / or the coupling slot can be configured to transmit radio frequency waves, such as those with frequencies above 50 GHz. In embodiments, at least two coupling slots can be provided (e.g., arranged vertically or side-by-side). For example, a feed slot can be located on the bottom side of the cavity. Alternatively, the feed slot can be located on the circumferential wall of the cavity or on the top side of the cavity. In embodiments, the feed slot and one or more coupling slots can have different sizes and / or shapes. Additionally or alternatively, the feed slot and at least one coupling slot can have similar shapes, particularly the same shape. For example, the feed slot and one or more coupling slots can be arranged parallel to each other. In another embodiment, the feed slot and one or more coupling slots can be positioned in an misaligned manner. The air cavity can be wider than the antenna patch (e.g., an antenna patch made of copper). Alternatively, the air cavity can be narrower than the antenna patch. The maximum width is limited only by manufacturing process and / or miniaturization requirements. In one embodiment, the maximum width can be 7 mm to reliably suppress warpage. For stability reasons, the top-side insulating layer of the stack that can directly contact the air cavity can be a core (wherein, the core preferably has a thickness in the range of 100 µm to 300 µm). Alternatively, the top-side insulating layer of the stack that can directly contact the air cavity can be a layer comprising or made of glass, such as a glass core, and / or a layer comprising or made of ceramic material. For example, the air cavity can be provided with vents. Optionally, the vents can be covered by a membrane to allow pressure exchange. An additional electrical insulating layer (e.g., providing coupling holes extending through the additional electrical insulating layer) can be provided between the air cavity and the waveguide. The air cavity can be very thick, such that the air cavity extends over at least two electrical insulating layer structures. This design can have the effect of achieving a better quality factor, thereby providing higher antenna gain. For example, the width of the air cavity can be wider than that of the waveguide. Alternatively, the air cavity can have the same dimensions as the waveguide or can be smaller. When the air cavity is thicker, it is advantageous to adjust the width of the antenna patch relative to the thickness of the air cavity in the stacking direction to achieve a better quality factor. For example, the thickness of the air cavity, particularly the thickness of the signal modulator element, can be less than the thickness of the waveguide. Alternatively, the thickness of the waveguide can be the same as or smaller than the thickness of the air cavity, particularly the thickness of the signal modulator element. In a top view, the waveguide and the air cavity can have the same direction of extension (i.e., they can extend parallel to each other); alternatively, the waveguide and the air cavity can be tilted relative to each other.The antenna structure may include at least one copper patch, for example, at least two copper patches. Via connections can be established between the copper layer above the air cavity and other copper layers, resulting in higher gain, better efficiency, and / or higher bandwidth. Alternatively, a copper block can be inserted, extending vertically over at least one thickness of an insulating layer structure. Advantageously, the vias can form an m x n matrix (preferably equidistant from each other). Preferably, the vias can have the same geometric extension (e.g., diameter or shape). Alternatively, the vias can have different geometric extensions (e.g., diameter or shape). In embodiments, the vias are not directly positioned at the edges of the copper patches. For example, the copper patches can overlap (which may be preferred), but are not required to overlap. In particular, the different copper patches do not need to have the same dimensions. For example, the copper patches can be arranged from thin to wide (e.g., from the center of the stack to the exposed surface). This can result in higher directivity and / or bandwidth. In embodiments, the sidewalls of the air cavity can be metallized, such that the sidewalls function as filter elements. Alternatively, vias can be installed to provide a filtering effect. Alternatively, waveguides can be designed to provide filtering functionality. In an embodiment, a DRA antenna can be provided, thereby allowing for even higher bandwidth. Lenses can be provided for higher directivity. Surface-mount devices, such as the aforementioned lenses and / or the aforementioned DRA antennas, can be connected to the stack via connection structures (such as sintered structures, solder structures, etc., not shown in the figures) (and optionally electrically connected to the stack). In one embodiment, the component carrier, in addition to the stack of component carriers, may also include and / or incorporate within the stack the following basic building blocks: waveguides, additional air cavities, antennas, filters, and lenses.

[0101] Exemplary embodiments can allow direct feeding from air-filled substrate integrated waveguides (AFSIW), eliminating losses due to the absence of transition sections. Furthermore, the component carrier according to the exemplary embodiments can exhibit high mechanical reliability, low loss performance, and / or a small form factor. The exemplary embodiments are also compatible with millimeter-wave devices and can be extended for use in millimeter-wave devices. In addition, the component carrier according to the exemplary embodiments of the present invention is also compatible with embedded components, surface-mount devices, and IC substrates.

[0102] An exemplary application of the exemplary embodiments of the present invention is a millimeter-wave device, for example, operating at 77 GHz or higher, or even at 140 GHz or higher. For example, such a component carrier can be configured for 5G or 6G applications, communication infrastructure, radar applications (e.g., automotive radar applications, gesture radar applications), etc. Other advantageous applications of the exemplary embodiments may be component carriers with sensing and / or motion detection capabilities. When operating at lower millimeter-wave frequencies, the waveguide cavity of the component carrier of the exemplary embodiments of the present invention can be implemented in a half-mode manner. A specific application of the component carrier according to the exemplary embodiments is a 77 GHz hollow waveguide-feed slot antenna for automotive radar devices. The exemplary embodiments can operate in the Asia-Pacific Hertz range.

[0103] Figure 1 A cross-sectional view of a component carrier 100 according to an exemplary embodiment of the present invention is shown. In the illustrated embodiment, the component carrier 100 is implemented as a printed circuit board (PCB). However, the component carrier 100 may also be an integrated circuit (IC) substrate, etc.

[0104] according to Figure 1 The component carrier 100 includes a laminated stack 102, which includes multiple electrically conductive layer structures 150 and multiple electrically insulating layer structures 152. The electrically conductive layer structures 150 may include patterned copper layers that can form horizontal antenna structures, horizontal shielding structures, horizontal pads, and / or horizontal wiring structures. Furthermore, the electrically conductive layer structures 150 may also include vertical through-connectors (…). Figure 1 (Not shown), such as copper pillars and / or copper-filled laser vias. Additionally or alternatively, mechanically plated through-holes (PTHs) can also be used as vertical through-connectors. The stack 102 of the component carrier 100 may also include one or more electrically insulating layer structures 152 (such as one or more prepreg sheets, resin sheets, or cores made of FR4). Ajinomoto Building Material® (ABF) material may also be used for at least a portion of the electrically insulating layer structure 152, especially when the component carrier 100 is implemented as an IC substrate. Optionally, surface treatments (such as ENIG or ENEPIG, solder resist, etc.) may also be applied to the top and / or bottom sides (not shown) of the stack 102.

[0105] For example, each conductive layer structure in conductive layer structure 150—which can be implemented as a copper layer—has a thickness in the range of 5µm to 350µm, for example, in the range of 20µm to 30µm. Some of the electrical insulating layer structures in electrical insulating layer structure 152 can be prepreg layers having a thickness in the range of 20µm to 300µm, for example, in the range of 60µm to 100µm. Other electrical insulating layer structures in electrical insulating layer structure 152 can be core layers made of FR4 having a thickness in the range of 50µm to 1000µm, for example, in the range of 150µm to 400µm. Additionally or alternatively, the electrical insulation layer structure 152 may include layers comprising glass and / or made of glass, i.e., a glass core, and / or layers comprising ceramic and / or made of ceramic, each having a thickness in the range of 20 µm to 400 µm.

[0106] Furthermore, a cavity 104, serving as an air-filled volume portion, is formed in the stacked member 102. In the illustrated embodiment, the cavity 104 is filled with air. Therefore, it is possible to... Figure 1An air-filled waveguide structure is provided incorporating the stack 102. Alternatively, another medium may be filled in the waveguide cavity 104, such as a dielectric solid, and / or a sponge medium, and / or a gel. The cavity 104 may be defined from the stack 102 by circumferential walls, which may include circumferentially closed sidewalls as well as bottom and top walls. A conductive shield 106 may cover a major portion of the circumferential walls of the cavity 104, such as a copper-coated portion or a coating made of another metallic material. The conductive shield 106 may include at least one, particularly two, layers of metallic material. The at least one metallic material layer may include a metal, particularly copper or titanium. In a preferred embodiment, the at least two metallic material layers may include the same material, such as copper. In another embodiment, the at least two metallic material layers may include at least two different metals, such as titanium, and / or copper, and / or tungsten, and / or molybdenum, and / or tantalum. In another embodiment, at least one of the at least two metal material layers may comprise a metal compound, such as a metal salt, particularly a metal oxide and / or a metal nitride, for example, copper oxide, and / or titanium oxide, and / or titanium nitride. More specifically, the conductive shield 106 may cover the entire circumferential wall except for the top-side feed groove 132 and the top-side coupling groove 110. Preferably, more than 50%, particularly more than 70%, of the surface area of ​​the cavity 104 may be in direct contact with or covered by the conductive shield 106. Optionally, the conductive shield 106 may have a roughness Rz and / or Ra of less than 2µm, particularly less than 900nm, more particularly less than 600nm. In some embodiments, a via gate may be used as the conductive shield 106 when ease of manufacture is preferred.

[0107] The cavity 104, with a metal liner as indicated by reference numeral 106, can form an air-filled waveguide that constitutes a Faraday cage for electromagnetic radio frequency waves. Advantageously, incorporating the waveguide-type cavity 104 into the stack 102 achieves a compact design and high power handling capability. At the top or bottom closure of the cavity (i.e., the cover), the dielectric material layer can be a non-reflow prepreg.

[0108] In addition, according to Figure 1 An antenna (or antenna structure) 108 is provided, which is incorporated into the stack 102. This further facilitates the compact design of the component carrier 100.

[0109] exist Figure 1 In this configuration, antenna 108 is constructed as a patch antenna 108", which is defined by the uppermost conductive layer structure of conductive layer structure 150, the uppermost conductive layer structure being a patterned copper layer providing the patch structure 156. Still referring to...Figure 1 As can be seen, the conductive shielding portion 106 has a coupling slot 110 at the top end of the cavity 104 along the stacking direction 112. The coupling slot 110 is vertically associated with an antenna 108 disposed above the coupling slot 110 and separated vertically by a non-conductive, low-loss, high-frequency structure 154. Figure 1 In one embodiment, the non-conductive low-loss high-frequency structure 154 is configured as an additional air-filled cavity arranged above the air-filled cavity 104 and in gas communication with the air-filled cavity 104.

[0110] exist Figure 1 During operation of the component carrier 100, high-frequency signals (e.g., having a frequency of 10 GHz or higher, such as 77 GHz) can be coupled into the cavity 104 via a feed structure, which is implemented herein as a feed line 160, forming part of the electrically conductive layer structure 150 and disposed on or below the bottom wall of the cavity 104. Furthermore... Figure 1 As shown, the conductive shielding portion 106 includes a feed slot 132 located at the bottom end of the cavity 104 along the stacking direction 112 and associated with the feed structure implemented herein as a feed line 160. The feed line 160 is formed near the feed slot 132 for coupling electromagnetic waves into the waveguide cavity 104. In short, electromagnetic signals are fed into the cavity 104 at the bottom of the waveguide via the feed line 160. The high-frequency signals coupled into the cavity 104 can be, for example, from at least one electronic component, such as one or more semiconductor chips (…). Figure 1 Not shown in the image, see [link / reference]. Figure 3 As indicated by reference numeral 170 in the figures, at least one electronic component may be embedded within the stack 102 and / or surface-mounted on top of the stack 102. Such a semiconductor chip may also be mounted on a substrate on which the stack 102 may be formed or additionally disposed. Electromagnetic signals, after being coupled from the feed line 160 into the cavity 104, may be applied to the antenna 108 for wireless transmission toward the environment of the component carrier 100. Preferably, high-frequency signals may be coupled from the feed line 160 into the cavity 104, from the cavity 104 via the coupling slot 110 into the non-conductive low-loss high-frequency structure 154, and from the non-conductive low-loss high-frequency structure 154 into the antenna 108.

[0111] Alternatively, high-frequency signals propagating in the environment of component carrier 100 can be captured by antenna 108, coupled into cavity 104, and further transmitted to an electrically conductive layer structure located at the bottom of cavity 104, and then from that electrically conductive layer structure to a intended destination (e.g., an electronic component, such as a semiconductor chip, see below).Figure 3 (See attached figure 170) for further processing.

[0112] Therefore, the component carrier 100 can be configured as an RF transmitter, an RF receiver, or an RF transceiver (i.e., a combined transmitter and receiver). Multiple cavity-low-loss high-frequency structure-antenna configurations can also be provided in the same stack 102, such that the multiple cavity-low-loss high-frequency structure-antenna configurations are arranged side-by-side or laterally spaced by the stacking material.

[0113] As previously described, a non-conductive low-loss high-frequency structure 154 is arranged above the cavity 104, and the antenna 108 is arranged above the low-loss high-frequency structure 154. In the illustrated embodiment, the low-loss high-frequency structure 154 is formed as a separate air-filled cavity located above the air-filled cavity 104, the separate air-filled cavity having a bottleneck portion in the form of the upper portion of the conductive shielding portion 106, and a coupling groove 110 is provided between the air-filled cavity 104 and the separate air-filled cavity. Therefore, the low-loss high-frequency structure 154 is vertically sandwiched between the cavity 104 and the antenna 108. Figure 1 As shown, the additional cavity is closed on the top side by the uppermost electrical insulating layer structure 152 of the stack 102.

[0114] As mentioned above, Figure 1 The antenna 108 is a patch antenna 108'', which is incorporated in the stack 102. The electrically conductive patch structure 156 of the patch antenna 108'' is formed on the top main surface of the uppermost electrically insulating layer structure 152, and may, for example, form part of the outer surface of the component carrier 100.

[0115] Refer again Figure 1 The top portion of the conductive shield 106, where the coupling groove 110 is formed, is implemented as a cantilevered free-hanging structure. This structure results in a smaller amount of dielectric material in the wave propagation direction, thereby contributing to the excellent signal integrity and low-loss performance of the component carrier 100. In the example, at least a portion of the top portion of the conductive shield 106 may have a thickness in the range of 5µm to 350µm, particularly in the range of 30µm to 200µm.

[0116] The uppermost electrical insulating layer structure of the electrical insulating layer structure 152 that defines the top side of the low-loss high-frequency structure 154 may be a core having a thickness D in the range of 100µm to 300µm, for example, 200µm. Additionally or alternatively, the electrical insulating layer structure 152 defining the top side of the low-loss high-frequency structure 154 may include layers comprising glass and / or made of glass, i.e., a glass core, and / or layers comprising ceramic and / or made of ceramic, each having a thickness in the range of 20µm to 400µm. This can provide reliable mechanical protection for the hollow component carrier 100. For example, the core may be made of fully cured epoxy resin containing reinforcing glass fibers. Preferably, the vertical walls of the cavities according to reference numerals 104 and 154 may be substantially parallel to the stacking direction 112. Alternatively, the vertical walls or sidewalls may be inclined.

[0117] Still refer to Figure 1 The vertical extension h of the low-loss high-frequency structure 154 is less than the vertical extension H of the cavity 104. Alternatively, the vertical extension h of the low-loss high-frequency structure 154 is similar to, and particularly the same as, the vertical extension H of the cavity 104, or the vertical extension h of the low-loss high-frequency structure 154 is greater than the vertical extension H of the cavity 104. However, the horizontal extension L of the low-loss high-frequency structure 154 can be greater than the horizontal extension l of the cavity 104. Alternatively, the horizontal extension L of the low-loss high-frequency structure 154 can be similar to, and particularly the same as, the horizontal extension l of the cavity 104, or the horizontal extension L of the low-loss high-frequency structure 154 can be smaller than the horizontal extension l of the cavity 104. The size of the cavity 104 can be adjusted according to the frequency or frequency range of the electromagnetic waves propagating along the component carrier 100 during operation. For example, the size of the cavity 104 can be configured for frequencies in the gigahertz range, such as up to 27 GHz, or even at least 75 GHz. The size of the non-conductive, low-loss high-frequency structure 154, implemented here as an additional hollow cavity, can be manufactured large enough to significantly reduce the radio frequency loss of radio frequency waves propagating towards the outside of the component carrier 100 between the feed line 160 and the antenna 108. Descriptively, the volume of the non-conductive, low-loss high-frequency structure 154 can replace ordinary prepreg, which attenuates radio frequency waves in a more powerful manner than the cavity-type low-loss high-frequency structure 154.

[0118] Figure 1The additional air cavity, i.e., the non-conductive, low-loss, high-frequency structure 154, can improve the quality factor, thereby achieving higher antenna gain. The additional air cavity improves antenna gain and / or efficiency by reducing dielectric material loss. Antenna 108 can be fed by feed line 160, which may be, for example, a microstrip / SIW (substrate integrated waveguide) line. RF signal coupling to the air-filled waveguide can be achieved via feed line 160. The layer structures 150, 152 of the stack 102 can be used for wiring. Vias (not shown) can also be implemented to provide efficient vertical connections along short paths.

[0119] Therefore, the described implementation provides an embedded waveguide implemented in a PCB and allows for the realization of low-loss transmission lines. As an alternative to the illustrated patch antenna 108", a slotted waveguide antenna or another antenna type can also be implemented. For example, the diameter of the patch antenna 108" can range from 1 mm to 12 mm.

[0120] Figure 2 A cross-sectional view of a component carrier 100 according to another exemplary embodiment of the present invention is shown.

[0121] Figure 2 Implementation methods and basis Figure 1 The difference in the implementation method is particularly that, according to Figure 2 The low-loss high-frequency structure 154 extends vertically over two electrically insulating layer structures 152 and an electrically conductive layer structure 150 located between the two electrically insulating layer structures 152. The size of this additional cavity (particularly the vertical extension h) can be further increased by making the non-conductive low-loss high-frequency structure 154—which is also implemented as an additional air-filled cavity—extend vertically over the vertically stacked multiple electrically insulating layer structures 152. This allows for further reduction in RF loss.

[0122] Figure 3 A cross-sectional view of a component carrier 100 according to another exemplary embodiment of the present invention is shown.

[0123] Figure 3 Implementation methods and basis Figure 1 The difference in the implementation method is particularly that, according to Figure 3 An electronic component 170, implemented as a radio frequency semiconductor wafer, is embedded in the stack 102 below the feed line 160. Through some conductive layer structures in the conductive layer structure 150, including vertical through-connectors 130, the embedded electronic component 170 can be electrically connected to the feed line 160 located on the bottom side of the cavity 104. Although Figure 3Not shown, but feed line 160 and vertical through-connector 130 can be electrically connected to each other via an additional electrically conductive vertical through-connector (e.g., a via) between feed line 160 and vertical through-connector 130. Embedded electronics 170 can generate radio frequency (RF) signals that can be coupled via feed line 160 into cavity 104, from cavity 104 to non-conductive low-loss high-frequency structure 154, coupled to antenna 108, and ultimately transmitted toward the environment of component carrier 100. Additionally or alternatively, electronics 170 can also be configured to process received high-frequency signals. Further additionally or alternatively, electronics 170 can be surface-mounted on stack 102 (not shown) or mounted on a separate board. However, embedding electronics 170 below cavity 104 and adjacent to feed line 160 in stack 102 allows for a very short signal path and thus further contributes to reduced losses. The electronic component 170 can also be positioned adjacent to the cavity 104 (to the left or right, for example, at the same level as the cavity 104). The shorter the distance, the lower the loss.

[0124] also, Figure 3 The cavity-type low-loss high-frequency structure 154 is shown with its sidewalls lined with a metallization layer 133 (or lined with a metal grid including circumferentially arranged electrically conductive vertical through-connectors, not shown). This sidewall metallization of the additional cavity can further reduce RF loss. Preferably, the metallized sidewalls of the additional cavity (i.e., the low-loss high-frequency structure 154) can be laterally offset relative to the conductive shield 106. Alternatively, the metallized sidewalls of the additional cavity (i.e., the low-loss high-frequency structure 154) can be positioned such that, with respect to the stacking direction 112, the metallized sidewalls of the additional cavity will be in a straight line with the conductive shield 106. In one embodiment, the material of the metallization layer 133 may include copper. In another embodiment, the metallization layer 133 may include at least two layers. For example, the at least two layers may include the same material, i.e., copper, or the at least two layers may include different materials, such as copper and titanium.

[0125] Figure 4 A cross-sectional view of a component carrier 100 according to another exemplary embodiment of the present invention is shown.

[0126] Figure 4 Implementation methods and basis Figure 2 The difference in the implementation method is particularly that, according to Figure 4 This shows the electronic component 170 embedded in the stack 102 (with... Figure 3 (Compare the descriptions).

[0127] also, Figure 4The antenna 108 is a slot antenna 108', rather than a patch antenna 108" as described in the above embodiment. To form the slot antenna 108', the coupling slot 110 may define an elongated slot having a length greater than its width. The uppermost conductive layer structure 150 may be patterned to have a large central opening aligned with the coupling slot 110. For example, Figure 4 The aspect ratio of the coupling slot 110 can be at least 2, for example, at least 4. For example, the length of the coupling slot 110 can be in the range of 1 mm to 5 mm, for example, 2 mm. For example, the width of the coupling slot 110 can be in the range of 100 µm to 1 mm, for example, 200 µm to 700 µm. The length and width directions are perpendicular to the stacking direction 112 and are perpendicular to each other. Forming the coupling slot 110 in the described manner allows for low radiation loss. Figure 4 The 108' slot antenna design allows for a significant reduction in losses. In short, Figure 4 The slotted antenna 108' is implemented as an open copper layer with one or more rectangular slots. Figure 4 The corresponding patterning of the uppermost conductive layer structure 150 also contributes to the functionality of the slot antenna 108'.

[0128] also, Figure 4 The implementation includes a vent 165 in the uppermost electrically insulating layer structure 152, thereby achieving pressure connection between the cavity 104 and the coupled low-loss high-frequency structure 154 and the external environment of the stack 102. Optionally, as shown, the vent 165 can be sealed by a membrane 166. The membrane 166 (preferably a flexible or elastic membrane) can cover the vent 165. This protects the conductive shield 106 lining the cavity 104 from corrosive impacts and protects the cavity 104 and the low-loss high-frequency structure 154 from dust intrusion. Simultaneously, the elastic or flexible properties of the membrane 166 allow pressure exchange between the interior and exterior of the hollow volume formed by the cavity 104 and the low-loss high-frequency structure 154.

[0129] Figure 5 A cross-sectional view of a component carrier 100 according to another exemplary embodiment of the present invention is shown.

[0130] Figure 5 Implementation methods and basis Figure 2 The difference in the implementation method is particularly that, according to Figure 5 The patch antenna 108" includes an additional electrically conductive patch structure 156 located above the electrically conductive patch structure 156.

[0131] In embodiments, the electrically conductive patch structure 156 and other electrically conductive patch structures 156 may have similar dimensions, particularly the same dimensions. Alternatively, the dimensions of the electrically conductive patch structure 156 and other electrically conductive patch structures 156 may differ by at least 20%, particularly by at least 30%. For example, the size difference may be in the range of 1% to 30% or 40%, typically slightly less than 10%.

[0132] A vertical through-connector 130 interconnects the electrically conductive patch structure 156 with the other electrically conductive patch structure 156 and extends through the uppermost electrically insulating layer structure 152 located between the electrically conductive patch structure 156 and the other electrically conductive patch structure 156. The vertical through-connectors 130 may be arranged in a matrix pattern along rows and columns, for example, arranged equidistantly from each other. To achieve a symmetrical structure, the vertical through-connectors 130 may all have the same size and shape. Alternatively, the vertical through-connectors 130 may be arranged in an irregular distribution, for example, randomly, and / or the vertical through-connectors 130 may have different sizes and shapes. The lower patch structure 156 of the patch antenna 108'' is disposed in a separate cavity defining the non-conductive, low-loss, high-frequency structure 154. Both patch structures 156 are formed as part of the electrically conductive layer structure 150 of the stack 102. Figure 5 The configuration of connecting planar patch structures 156, 156 at different heights of the stack 102 via an electrically conductive vertical through-connector 130 can provide higher gain and better efficiency. Vias can provide higher bandwidth. Advantageously, the lower patch structure 156 is thinner than the upper patch structure 156 to allow for fine-tuning of the high-frequency characteristics of the component carrier 100. As Figure 5 As an alternative, the non-conductive, low-loss, high-frequency structure 154 can also extend vertically only on a single electrically insulating layer structure 152, for example, as Figure 1 As shown in the diagram. Furthermore, the electronic component 170 can be embedded in the stack 102 below the cavity 104, for example, as shown in the diagram. Figure 3 As shown in the image.

[0133] Figure 6 A cross-sectional view of a component carrier 100 according to another exemplary embodiment of the present invention is shown.

[0134] Figure 6 Implementation methods and basis Figure 5 The difference in the implementation method is particularly that, according to Figure 6Three patch structures 156 are stacked vertically, with corresponding electrical insulating layer structures 150 located between adjacent patch structures 156. A vertical through-connector 130 connects the two lowest patch structures 156 and the two highest electrical conductive patch structures 156 to each other. Although Figure 5 The implementation with two patch antennas electrically connected has provided improved bandwidth and efficiency, but Figure 6 The embodiment with three electrically connected patch structures 156 can provide even better bandwidth and efficiency. Advantageously, the lowermost patch structure 156 is thinner than the central patch structure 156, and the central patch structure 156 is thinner than the uppermost patch structure 156, to fine-tune the high-frequency characteristics of the component carrier 100. Even more significant effects may exist when the pad dimensions (length and width) are varied in a horizontal plane perpendicular to the stacking direction 112 (i.e., along the x-axis and / or y-axis). Therefore, the patch dimensions can be identical (e.g., ...). Figure 6 (as shown in the image), or they can be different.

[0135] As Figure 6 As an alternative, the non-conductive, low-loss, high-frequency structure 154 can also extend vertically only on a single electrically insulating layer structure 152, for example, as Figure 1 As shown in the diagram. Furthermore, the electronic component 170 can be embedded in the stack 102 below the cavity 104, for example, as shown in the diagram. Figure 3 As shown in the image.

[0136] Figure 7 A cross-sectional view of a component carrier 100 according to another exemplary embodiment of the present invention is shown.

[0137] Figure 7 Implementation methods and Figure 1 The difference in the implementation method is particularly that, according to Figure 7 Low-loss high-frequency structure 154 includes DF materials (such as Panasonic). TM The complete layer of the DF material (such as Megtron 7) extends across the entire width of the stack 102. Figure 7 The dielectric material of the low-loss high-frequency structure 154 has a DF value lower than that of the two directly adjacent electrical insulating layer structures 152, and preferably lower than that of all electrical insulating layer structures 152 of the stack 102.

[0138] Relative to according to Figure 1 Another difference in the implementation method is that, according to Figure 7The antenna 108 is a dielectric resonator antenna (DRA) 108'''. Here, the dielectric resonator antenna 108''' is implemented as a component surface-mounted on the top main surface of the stack 102 rather than being bonded to the stack 102. An adhesive layer 172 can be used to assemble the dielectric resonator antenna 108''' to the stack 102. The dielectric resonator antenna 108''' can have a high DK value of at least 8, for example, 10.

[0139] The dielectric resonator antenna 108''' can be configured for higher bandwidth. The dielectric resonator antenna 108''' can be used as a radiating element based on a dielectric material preferably having a high DK value of about 10. The dielectric resonator antenna 108''' can be mounted on a PCB and is suitable for applications with frequencies of 27 GHz and above. The dielectric resonator antenna 108''' can be fed by a feed line 160 implemented as a microstrip / SIW.

[0140] Although Figure 7 Although not shown, electronic component 170 can be embedded in stack 102 below cavity 104, for example, as shown in the figure. Figure 3 As shown in the image.

[0141] Although Figure 7 As not shown in the diagram, a via may exist between the layer below the dielectric resonator antenna 108''' and the waveguide.

[0142] Figure 8 A cross-sectional view of a component carrier 100 according to another exemplary embodiment of the present invention is shown.

[0143] Figure 8 Implementation methods and basis Figure 7 The difference in the implementation method is particularly that, according to Figure 8 The conductive shield 106 has a supporting electrical insulation structure 162 forming the top portion of the coupling groove 110. The supporting electrical insulation structure 162 is arranged on the top surface and is arranged to surround the coupling groove 110.

[0144] also, Figure 8 A non-conductive, low-loss, high-frequency structure 154 is achieved, which has a laterally confined, low-DF material structure inserted into a through-hole in an electrically insulating layer structure 152. Preferably, the non-conductive, low-loss, high-frequency structure 154 can be positioned within the electrically insulating layer structure 152 such that the coupling groove 110 is in direct contact with the non-conductive, low-loss, high-frequency structure 154. The two grooves located above and below the non-conductive, low-loss, high-frequency structure 154 can be aligned. Either of the two grooves can be air-filled or filled with a solid dielectric. In other words, with... Figure 7 The implementation methods are different.Figure 8 The non-conductive, low-loss, high-frequency structure 154 does not extend across the entire width of the stack 102, but is implemented as an inlay made of a low-DF material within the electrically insulating layer structure 152. Alternatively, Figure 8 The non-conductive, low-loss, high-frequency structure 154 in the text can be as follows: Figure 1 The air cavity shown.

[0145] In addition, Figure 8 In one embodiment, antenna 108 is implemented as a surface-mounted dielectric resonator antenna 108'''. For example... Figure 3 As shown, the radio frequency signal inserted into the cavity 104 via the feed line 160 can be generated by the embedded electronic component 170. However, this RFIC-type electronic component 170 can also be implemented as a surface-mount device.

[0146] Figure 9 A cross-sectional view of a component carrier 100 according to another exemplary embodiment of the present invention is shown.

[0147] Figure 9 Implementation methods and basis Figure 5 The difference in the implementation method is particularly that, according to Figure 9 The lens component 182 is configured to be surface-mounted on the stack 102. Descriptively, the radio frequency lens component 182 can focus radio frequency waves emitted by the patch antenna 108'' located directly below the lens component 182. The surface-mounted lens component 182 can be attached to the upper main surface of the stack 102 via an adhesive layer 172.

[0148] Furthermore, a frequency filter structure 158 is envisioned in the upper portion of the stack 102. The frequency filter structure 158 can define a preferred frequency or frequency range for the radio frequency radiation to be emitted efficiently. Figure 9 In one embodiment, the frequency filter structure 158 is arranged on top of the low-loss high-frequency structure 154 combined with the antenna 108.

[0149] However, alternatively, the filter structure 158 can be disposed between the electronic component 170 and the cavity 104, or between the cavity 104 and the non-conductive, low-loss, high-frequency structure 154. Furthermore, filtering functionality can be provided regardless of whether a lens element 182 is conceived.

[0150] The lens component 182 on top is designed for higher directivity. Furthermore, the lens component 182 also contributes to the antenna's functionality. This lens component 182 can be engaged with the antenna 108, or it can be added to the top of the antenna 108 (which may be...). Figure 9In addition to the antenna in the middle, another type of antenna (such as horn antenna, slot antenna, etc.) is used to achieve higher gain and directivity.

[0151] like Figure 9 As shown, a portion of the upper main surface of the conductive layer structure 150 forming an additional cavity-type non-conductive low-loss high-frequency structure 154 can be patterned. Although not shown, alternatively, this portion can be a continuous metallic structure.

[0152] Figure 10 A cross-sectional view of a component carrier 100 according to another exemplary embodiment of the present invention is shown.

[0153] Figure 10 Implementation methods and basis Figure 5 The difference in the implementation method is particularly that, according to Figure 10 ,according to Figure 5 The patch antenna 108'' is combined with the surface-mount lens component 182.

[0154] also, Figure 10 It is envisioned that there is an embedded electronic component 170 for generating radio frequency waves introduced into cavity 104 (however, the embedded electronic component 170 may be omitted or replaced by a surface-mount electronic component 170).

[0155] Figure 11 A top view of a component carrier 100 according to an exemplary embodiment of the present invention is shown. More precisely, Figure 11 yes Figure 5 The cross-sectional view shows a top view of the component carrier 100. Specifically, Figure 11 Two patch structures 156, 156 are shown, spaced apart vertically, and are vertically interconnected by a matrix array of copper-filled vias forming a vertical through-connector 130. More specifically, the patch structures 156, 156 are implemented as a top-side copper patch and a copper patch located one layer below the top-side copper patch. As shown, the patch structures 156, 156 can be horizontally displaced relative to each other, and / or can have different dimensions in the horizontal plane.

[0156] also, Figure 11 The conductive shielding portion 106 is shown to have an additional coupling groove 110, which is located at the top end of the cavity 104 in a manner parallel to the coupling groove 110. Figure 11 The coupling slots 110 and 110 are inclined to each other. Figure 11The coupling slots 110, 110 are also inclined relative to the feed slot 132 adjacent to the feed line 160. Alternatively, the coupling slots 110 and the feed slots 132 can be arranged parallel to each other.

[0157] Each coupling slot 110 may define an elongated slot whose length L is greater than its width W. Preferably, the maximum width W of the coupling slot 110 and the feed slot 132 does not exceed 12 mm. This can suppress warping. As shown, the coupling slot 110 and the feed slot 132 may have different sizes and / or shapes.

[0158] The design parameters of component carrier 100 can be as follows: Figure 11 As shown, or otherwise implemented: the copper patches forming the patch structure 156 need not have the same size or shape (e.g., the copper patches forming the patch structure 156 can also be circular). The air cavity forming the low-loss high-frequency structure 154 can also be smaller than the copper patches. One or more coupling slots 110 can be located at least partially within the region of the copper patches. Metallized sidewalls or via gates for the air cavity are optional, but if such metallized sidewalls or via gates are used, crosstalk with other channels can be reduced.

[0159] In one embodiment, the feed slot 132 may be located outside the area of ​​the patch structure 156. Alternatively, the feed slot 132 may be located at least partially within the area of ​​the patch structure 156, which may be more preferred.

[0160] Figure 12 A plan view of a component carrier 100 according to another exemplary embodiment of the present invention is shown.

[0161] Figure 12 Implementation methods and basis Figure 11 The difference in the implementation method is particularly that, according to Figure 12 A common cavity 104 spatially and functionally mates with two (or more) antennas 108, which in this embodiment are patch antennas 108''. Therefore, in the view shown, the cavity 104 overlaps with the patch structures 156 of the two patch antennas 108''. Thus, an array of multiple antennas 108 can be formed in the same stack 102 of the same component carrier 100, and / or can be formed on the same stack 102 of the same component carrier 100. Figure 12 In the implementation method, the common cavity 104 is Figure 12 The planar diagram has a straight, elongated shape. Optionally, cavity 104 may include filter structure 158.

[0162] Figure 13A plan view of a component carrier 100 according to another exemplary embodiment of the present invention is shown.

[0163] Figure 13 Implementation methods and basis Figure 12 The difference in the implementation method is particularly that, according to Figure 13 The common cavity 104 serving the two antennas 108 (also implemented as patch antennas 108'') is in Figure 13 The plan view has a bifurcated geometry. More specifically, the feed slot 132 near the feed line 160 is located at the root portion 174 of the cavity 104. Starting from the root portion 174, the cavity 104 splits at the bifurcation portion 176 into a first branch 178 leading to the first antenna 108 and a second branch 179 leading to the second antenna 108.

[0164] In the implementation method, it is possible to... Figure 12 Features and Figure 13 The features are combined so that a branch 178, 179 can be connected to multiple antennas 108 arranged in series.

[0165] Figure 14 A cross-sectional view of a component carrier 100 according to another exemplary embodiment of the present invention is shown.

[0166] according to Figure 14 Antenna 108 is constructed as a patch antenna 108''. More specifically, patch antenna 108'' can also be referred to as an aperture-coupled patch antenna. Figure 14 The patch antenna 108'' is positioned above the coupling slot 110 in the conductive shielding portion 106 and above another cavity constituting the non-conductive low-loss high-frequency structure 154. The coupling slot 110 is vertically associated with the patch antenna 108'', but the patch antenna 108'' is positioned above or on top of the coupling slot 110. Figure 14 The patch antenna 108'' has a planar extension area that is larger than the planar extension area of ​​the coupling slot 110 in the conductive shield 106, and smaller than the planar extension area of ​​the non-conductive low-loss high-frequency structure 154.

[0167] The uppermost electrically insulating layer structure 152 closes the openings that define the non-conductive, low-loss, high-frequency structure 154, thereby protecting the conductive shield 106 from corrosion and the like. The patch antenna 108" is formed as the uppermost patterned electrically conductive layer structure 150 of the stack 102. Descriptively, the patch antenna 108" serves as a radiator, while the coupling slot 110 serves as a coupler.

[0168] also, Figure 14 The conductive connecting medium 142 surrounding the circumferential portion of cavity 104 is shown. Figure 14In this configuration, the conductive connection medium 142 is arranged to surround the circumferential portion enclosing the top end of the cavity 104. Preferably, the conductive connection medium 142 is made of a solder structure or a sintered structure, wherein the solder structure comprises, for example, tin, and / or antimony, and / or bismuth, and / or silver, and / or zinc, and the sintered structure comprises, for example, copper, and / or silver, and / or gold, and / or oxides of the above metals, or combinations thereof. The conductive connection medium 142 should have a high conductivity, particularly above 10. 6 S / m (at 20°C) to aid in the shielding function of the conductive shield 106. A dielectric structure 161 is arranged below the conductive connection medium 142 and laterally adjacent to the conductive shield 106. The dielectric structure 161 can be made of stacked dielectrics (e.g., plug-in paste with a low coefficient of thermal expansion (CTE), but more generally, the stacked dielectric can be any material suitable for achieving the desired height, such as prepreg for localized applications; copper can also be used as the stacking material). The conductive connection medium 142 is electrically connected directly or indirectly via the conductive shield 106 to a plurality of electrically conductive layer structures 150 stacked along the stacking direction 112.

[0169] The supporting electrical insulation structure 162 can be provided on top of the top layer of the conductive shield 106. When an electrical insulation layer is applied to the top of the conductive shield 106, it interacts with... Figure 1 In comparison, the copper in the top portion of the conductive shield 106 can be thinner. Figure 1 In this context, for manufacturing reasons, the top layer of the shielding structure can have a thickness of at least 250µm to create a robust cantilever structure.

[0170] Although Figures 1 to 16 The details are not shown in the figures, but optionally, they can be implemented according to the specific implementation in each embodiment. Figure 14 The dielectric structure 161.

[0171] Figure 14 The specific benefits of this implementation method are its advantageous characteristics in terms of directionality, bandwidth, and radiation efficiency.

[0172] Figure 15 A cross-sectional view of a component carrier 100 according to another exemplary embodiment of the present invention is shown.

[0173] Figure 15 Implementation methods and Figure 14 The difference in the implementation method is particularly that, according to Figure 15 Two patch structures 156, 156 are arranged one above the other as antenna 108. The two patch structures 156, 156 can be formed as a patterned conductive structure of two vertically spaced conductive layer structures 150 at the top of the stack 102. According to... Figure 15The upper patch structure 156 is formed by a patterned electrically conductive layer structure 150 arranged on the top main surface of the uppermost electrically insulating layer structure 152 of the component carrier 100. According to Figure 15 The lower patch structure 156 is formed by a patterned electrically conductive layer structure 150 arranged on the lower main surface of the uppermost electrically insulating layer structure 152 of the component carrier 100. Figure 14 In comparison, according to Figure 15 A lower patch structure 156 was added. Therefore, according to Figure 15 It provides a stacked array of two patch structures 156, 156. This arrangement can also be referred to as a via-coupled stacked patch structure 156, 156.

[0174] Apart from Figure 14 In addition to the specific advantages of the implementation method, Figure 15 It also has the added advantages of further improving directivity and further increasing bandwidth. The use of two patch structures 156 allows for adjustment of more than one resonant frequency of the waveguide antenna arrangement, particularly two different resonant frequencies.

[0175] Figure 16 A cross-sectional view of a component carrier 100 according to another exemplary embodiment of the present invention is shown.

[0176] Figure 16 Implementation methods and Figure 15 The difference in the implementation method is particularly that, according to Figure 16 Three patch structures 156, 156, 156 are arranged one above the other. These three patch structures 156, 156, 156 can be formed as a patterned electrical conductive structure of three vertically spaced electrical conductive layer structures 150 of the stack 102. Figure 15 Compared to the implementation method, Figure 16 The implementation can be obtained by stacking two additional electrically insulating layer structures 152 on top of each other. Figure 15 Structurally, and on the obtained stack 102, a patterned electrical conduction structure is formed. According to Figure 16The uppermost patch structure 156 is formed by a patterned conductive layer structure 150 disposed on the top main surface of the uppermost electrically insulating layer structure 152 of the component carrier 100. The lowermost patch structure 156 is composed of a patterned conductive layer structure 150, which is disposed on the top side of the non-conductive low-loss high-frequency structure 154 and formed on the bottom main surface of the electrically insulating layer structure 152 that encloses the top side of the non-conductive low-loss high-frequency structure 154. The central patch structure 156 is formed vertically between the uppermost patch structure 156 and the lowermost patch structure 156, and is formed on the top main surface of the electrically insulating layer structure 152 that encloses the top side of the non-conductive low-loss high-frequency structure 154. Therefore, according to Figure 16 It provides a stacked array of three patch structures: 156, 156, and 156.

[0177] Apart from Figure 15 In addition to the specific advantages of the implementation method, Figure 16 The implementation also has the additional advantage of further improving directivity and further increasing bandwidth, because setting three patch structures 156, 156, 156 allows for adjustment of different or even three resonant frequencies as needed.

[0178] It should be understood that even if... Figure 15 and Figure 16 The multiple patch or stacked patch arrangement shown can also be configured for operation at a single frequency only. However, it is also possible to configure such an arrangement for operation at multiple frequencies. Those skilled in the art will understand that in other embodiments, even more than three stacked patch antennas 108" are possible.

[0179] In implementations, there may be multiple (e.g., two or three) cavities 104, particularly waveguides, which may be coupled or connected to only one non-conductive, low-loss high-frequency structure, particularly a cavity (see reference numeral 154). This allows for the formation of filter functionality with a dedicated physical filter structure. For example, a first waveguide may have a first frequency bandwidth range, while a second waveguide may have another second frequency bandwidth range. By combining two waveguides, an effective frequency bandwidth range can be obtained, which may differ from both the first and second frequency bandwidth ranges.

[0180] Depending on the design and requirements, the stack can have more or fewer layers. Embedded ICs can be added to all implementations. Different combinations of prepreg and core can be used; this is not intended to limit the design to a specific stack, but rather as a general concept.

[0181] It should be noted that the term "comprising" does not exclude other elements or steps, and "a" or "the" does not exclude multiple. Furthermore, elements described in different embodiments may be combined.

[0182] It should also be noted that the reference numerals in the claims should not be interpreted as limiting the scope of the claims.

[0183] Implementations of the present invention are not limited to the preferred embodiments shown in the accompanying drawings and described above. Rather, it is possible to use the illustrated solutions and various variations based on the principles of the invention, even in cases where the implementations are fundamentally different.

Claims

1. A component carrier (100), wherein The component carrier (100) comprises: a stack (102) comprising a plurality of electrically conductive layer structures (150) and at least one electrically insulating layer structure (152); a cavity (104) formed in the stack (102) and delimited by a circumferential wall; a conductive shield (106) covering at least a portion of the circumferential wall of the cavity (104); a non-conductive low-loss high-frequency structure (154) located above the cavity (104); and an antenna (108) located at least partially above the low-loss high-frequency structure (154).

2. The component carrier (100) according to claim 1, wherein The low-loss high-frequency structure (154) comprises a further cavity located above the cavity (104).

3. The component carrier (100) according to claim 2, wherein The further cavity is air-filled or the further cavity is filled with a low-DK and / or low-DF material.

4. The component carrier (100) according to claim 2 or 3, wherein The further cavity is closed on a top side, in particular the further cavity is at least partially closed on a top side by the antenna (108).

5. The component carrier (100) according to claim 1, wherein The low-loss high-frequency structure (154) comprises a layer of low-DK and / or low-DF material, in particular the low-loss high-frequency structure (154) comprises a layer of low-DK and / or low-DF material extending over the entire width of the stack (102).

6. The component carrier (100) according to any one of claims 1 to 5, wherein The antenna (108) is a slot antenna (108').

7. The component carrier (100) according to any one of claims 1 to 5, wherein The antenna (108) is a dielectric resonator antenna (108''').

8. The component carrier (100) according to any one of claims 1 to 5, wherein The antenna (108) is a patch antenna (108'').

9. The component carrier (100) according to claim 8, wherein The patch antenna (108'') comprises an electrically conductive patch structure (156) located on at least one of the electrically insulating layer structures (152).

10. The component carrier (100) according to claim 9, wherein The patch antenna (108'') comprises at least one further electrically conductive patch structure (156) located above the electrically conductive patch structure (156).

11. The component carrier (100) according to claim 10, comprising one or more vertical through connections (130) interconnecting the electrically conductive patch structure (156) with the at least one further electrically conductive patch structure (156), and extending through at least one of the electrically insulating layer structures (152).

12. The component carrier (100) according to claim 11, wherein The vertical through connections (130) are arranged in a matrix pattern along rows and columns, for example the vertical through connections (130) are arranged in a matrix pattern along rows and columns equidistant to each other.

13. The component carrier (100) according to claim 11 or 12, wherein The vertical through connections (130) have the same size and / or the same shape.

14. The component carrier (100) according to any one of claims 8 to 13, wherein At least a portion of the patch antenna (108'') is arranged in or on the non-conductive low-loss high-frequency structure (154).

15. The component carrier (100) according to any one of claims 8 to 14, wherein The patch antenna (108'') comprises at least one portion of at least one electrically conductive layer structure (150) of the stack (102).

16. The component carrier (100) according to any one of claims 1 to 15, comprising an array of at least two antennas (108) which are spaced apart from each other in a horizontal plane and / or along a vertical direction.

17. The component carrier (100) according to any one of claims 1 to 16, comprising a frequency filter structure (158) which is located in the stack (102) and / or on the stack (102).

18. The component carrier (100) according to claim 17, wherein The frequency filter structure (158) is arranged at a feed line (160) located below the cavity (104), at the cavity (104) and / or on top of the low-loss high-frequency structure (154).

19. The component carrier (100) according to any one of claims 1 to 18, wherein The conductive shield (106) has a coupling slot (110) on a top end of the cavity (104), the coupling slot (110) being vertically associated with the antenna (108) arranged on top of the coupling slot (110).

20. The component carrier (100) according to any one of claims 1 to 19, wherein A top portion of the conductive shield (106) is a free overhang structure, in particular a top portion of the conductive shield (106) forming the coupling slot (110) is a free overhang structure.

21. The component carrier (100) according to any one of claims 19 or 20, wherein A top portion of the conductive shield (106) forming the coupling slot (110) has a support electrically insulating structure (162) arranged on a top surface and / or a bottom surface of the top portion of the conductive shield (106) and arranged around the coupling slot (110).

22. The component carrier (100) according to any one of claims 1 to 21, comprising a lens component (182) surface-mounted on the stack (102).

23. The component carrier (100) according to any one of claims 1 to 22, wherein The antenna (108) is formed as part of the stack (102), for example the antenna (108) is at least partially formed at an outer surface of the stack (102) as part of the stack (102).

24. The component carrier (100) according to any one of claims 19 to 23, wherein The conductive shield (106) has a further coupling slot (110) on a top end of the cavity (104) in a side-by-side manner with the coupling slot (110).

25. The component carrier (100) according to any one of claims 1 to 24, wherein The conductive shield (106) comprises a feed slot (132) on a bottom end of the cavity (104).

26. The component carrier (100) according to claim 25, wherein The coupling slot (110) and the feed slot (132) have different sizes and / or shapes.

27. The component carrier (100) according to claims 25 and 26, wherein The coupling slot (110) and the feed slot (132) are arranged parallel to each other.

28. The component carrier (100) according to any one of claims 19 to 27, wherein A maximum width (W) of at least one of the coupling slot (110) and the feed slot (132) does not exceed 12 mm.

29. The component carrier (100) according to any one of claims 1 to 28, wherein One of the at least one electrically insulating layer structure (152) delimiting a top side of the low-loss high-frequency structure (154) is a core, e.g. having a thickness (D) in the range of 50 µm to 600 µm, in particular having a thickness (D) in the range of 100 µm to 300 µm.

30. The component carrier (100) according to any one of claims 1 to 29, comprising a vent hole (165) fluidically coupling the low-loss high-frequency structure (154) with an environment outside of the stack (102) or fluidically coupling the low-loss high-frequency structure (154) with another cavity, or facilitating a pressure coupling of the low-loss high-frequency structure (154) with an environment outside of the stack (102) or with another cavity.

31. The component carrier (100) according to claim 30, wherein The vent hole (165) is closed by a membrane (166).

32. The component carrier (100) according to any one of claims 1 to 31, wherein The low-loss high-frequency structure (154) extends along a vertical direction over at least two electrically insulating layer structures (152) of the stack (102).

33. The component carrier (100) according to any one of claims 1 to 32, wherein A vertical extension (h) of the low-loss high-frequency structure (154) is smaller than a vertical extension (H) of the cavity (104).

34. The component carrier (100) according to any one of claims 1 to 33, wherein A horizontal extension (L) of the low-loss high-frequency structure (154) is larger than a horizontal extension (1) of the cavity (104).

35. The component carrier (100) according to any one of claims 1 to 34, wherein At least a portion of a sidewall of the low-loss high-frequency structure (154) is lined with a metallization layer (133) or is provided with a metal grid.

36. The component carrier (100) according to any one of claims 1 to 35, wherein The cavity (104) is filled with a medium, in particular air.

37. The component carrier (100) according to any one of claims 1 to 36, wherein The cavity (104) is configured for frequencies of at least 60 GHz.

38. A method of manufacturing a component carrier (100), wherein The method comprises: forming a cavity (104) in a stack (102) comprising at least two electrically conductive layer structures (150) and at least one electrically insulating layer structure (152), the cavity (104) being delimited by a circumferential wall; forming a conductive shield (106) to cover at least a portion of the circumferential wall of the cavity (104); forming a non-conductive low-loss high-frequency structure (154) over the cavity (104); and forming an antenna (108) at least partially on top of the low-loss high-frequency structure (154).

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