Control system and method for atomic layer deposition coating equipment and electronic equipment

Abstract

The invention discloses a control system and method for atomic layer deposition coating equipment and electronic equipment. The control system for the atomic layer deposition coating equipment has powerful functions of data acquisition, processing, display, storage and the like; according to the control system for the atomic layer deposition coating equipment, the atomic layer deposition coating equipment can be automatically controlled and monitored, and the working efficiency and the production speed of the atomic layer deposition coating equipment are improved; programs corresponding to the control method for the atomic layer deposition coating equipment can run on terminal equipment of different operating systems, so that an operator can interact with the control system for the atomic layer deposition coating equipment, good interaction experience is achieved, and learning cost is reduced.

Description

Technical Field

[0001] This application relates to the field of semiconductor thin film manufacturing control, specifically to a control system, method and electronic device for atomic layer deposition equipment. Background Technology

[0002] In recent years, the semiconductor industry has developed rapidly and has become an important part of global economic development. With continuous technological advancements and expanding market demand, the semiconductor industry will continue to evolve towards higher performance and lower costs. The semiconductor industry has broad prospects; continuous technological innovation and market demand will provide strong impetus for its sustained development, leading to increasingly widespread applications of semiconductor products across various fields.

[0003] Semiconductor products are typically obtained by processing wafers. During wafer processing, non-silicon materials, such as non-silicon dielectric layers and metal layers, can be introduced through thin film technology. Protective layers can also be formed through thin film technology, or the optical properties of semiconductor products can be adjusted through thin film technology.

[0004] Atomic layer deposition (ALD) is a method for preparing thin films, also known as atomic layer epitaxy. The principle of ALD thin film formation is as follows: a gaseous precursor is alternately pulsed into the reaction chamber, and a gas-solid phase chemisorption reaction occurs on the surface of the deposition substrate, thereby forming a thin film on the substrate surface.

[0005] Atomic layer deposition (ALD) equipment is a sub-segment of thin film deposition equipment. As a key component in advanced integrated circuit wafer manufacturing processes, its application demand is increasing in emerging markets. For example, in the field of optical energy materials, it can prepare various optical energy materials, such as optical thin films, photoconductors, photopolymers, and solar cells, providing new pathways and solutions for light energy conversion and utilization.

[0006] In traditional atomic layer deposition (ALD) thin film production processes, programmable logic controllers (PLCs) are used to control the start-up and shutdown of the ALD equipment and monitor its running status in real time. Different process flows are completed by setting various process parameters during production. Alternatively, different components of the ALD equipment can be manually controlled to ensure the normal operation of each component.

[0007] However, PLC programming and development is relatively complex and is usually carried out in a restricted environment, which may limit some advanced programming requirements and performance requirements; PLC systems have the risk of single point of failure, which may affect the entire production system; the cost of professional debugging, maintenance and software updates is high; and PLCs cannot meet the needs of some applications that require higher response speed and accuracy.

[0008] To address the aforementioned technical issues, an optimized control scheme is needed for atomic layer deposition (ALD) equipment. Summary of the Invention

[0009] One advantage of this application is that it provides a control system, method and electronic device for an atomic layer deposition coating equipment, wherein the control system for the atomic layer deposition coating equipment has powerful data acquisition, processing, display and storage functions.

[0010] Another advantage of this application is that it provides a control system, method and electronic device for an atomic layer deposition coating equipment, wherein the control system for the atomic layer deposition coating equipment can automatically control and monitor the atomic layer deposition coating equipment, thereby improving the working efficiency and production speed of the atomic layer deposition coating equipment.

[0011] Another advantage of this application is that it provides a control system and method for an atomic layer deposition coating equipment, and an electronic device thereof, wherein the program corresponding to the control method for the atomic layer deposition coating equipment can run on terminal devices (e.g., computers) with different operating systems. In this way, the operator can interact with the control system for the atomic layer deposition coating equipment, resulting in a good interactive experience and reducing the learning cost.

[0012] Another advantage of this application is that it provides a control system, method and electronic device for an atomic layer deposition coating equipment, wherein the control system for the atomic layer deposition coating equipment can accurately control and monitor the atomic layer deposition coating equipment, improve the accuracy and stability of the atomic layer deposition coating equipment, and support the implementation of more complex algorithms.

[0013] Another advantage of this application is that it provides a control system, method and electronic device for an atomic layer deposition coating equipment, wherein the control system for the atomic layer deposition coating equipment can display data and equipment status through a graphical interface, so that users can intuitively understand the operation of the atomic layer deposition coating equipment.

[0014] Another advantage of this application is that it provides a control system, method and electronic device for an atomic layer deposition coating equipment, wherein the control system for the atomic layer deposition coating equipment can be remotely controlled and monitored through a network, which makes it convenient for users to operate and manage the atomic layer deposition coating equipment anytime and anywhere.

[0015] According to one aspect of this application, a control system for an atomic layer deposition (ALD) equipment is provided, comprising: A communication unit, comprising a receiver and a driver, wherein the receiver is used to receive data from an atomic layer deposition equipment, and the driver is used to send signals to the atomic layer deposition equipment; A controller unit connected to the communication unit includes a vacuum valve controller, a pressure relief valve controller, and a vent valve controller. The vacuum valve controller and / or the vacuum valve controller are used to control the working state of the vacuum pump of the atomic layer deposition coating equipment. The pressure relief valve controller is used to control the working state of the pressure relief valve of the atomic layer deposition coating equipment. The vent valve controller is used to control the working state of the vent valve of the atomic layer deposition coating equipment. A data storage unit connected to the controller unit includes a database storage unit comprising a log recording module and a configuration database. The log recording module records information from each controller of the controller unit, and the configuration database stores the production process environment configuration required for the atomic layer deposition coating equipment. An interactive interface connected to the data storage unit includes a production status visualization interface and a configuration interface. The production status visualization interface is used to display the controller information of each controller in the controller unit in real time, as well as the real-time data of the pressure sensor and temperature sensor of the atomic layer deposition coating equipment. The configuration interface is used to configure parameters in the production process.

[0016] According to another aspect of this application, a control method for an atomic layer deposition (ALD) coating apparatus is proposed, comprising: S110, obtain the pre-temperature value and preset temperature range of the reaction chamber of the atomic layer deposition coating equipment; S120, in response to the preparatory temperature value not being within the preset temperature range, control the operating state of the heater of the atomic layer deposition coating equipment so that the preparatory temperature value of the atomic layer deposition coating equipment is within the preset temperature range; S130, in response to the pre-temperature value being within the preset temperature range, control the air extraction valve of the atomic layer deposition coating equipment to enter the working state; S140, obtain the pre-pressure value and the first preset pressure range of the reaction chamber of the atomic layer deposition coating equipment; S150, in response to the fact that the preparatory pressure value is not within the first preset pressure range, control the working state of the air extraction valve of the atomic layer deposition coating equipment so that the preparatory pressure value of the atomic layer deposition coating equipment is within the first preset pressure range. S160, in response to the pre-pressure value being within the first preset pressure range, the air inlet channel of the atomic layer deposition coating equipment is controlled to be open, so that the gas phase precursor enters the reaction chamber from the air inlet channel and reacts with the substrate in the reaction chamber, thereby generating a coating on the surface of the substrate. S170, the blowing channel of the atomic layer deposition coating equipment is controlled to be in the open state, so that the substrate placed in the reaction chamber is swept by the gas in the blowing channel; and... S180, the pressure relief valve of the atomic layer deposition coating equipment is in the open state.

[0017] In the control method for an atomic layer deposition coating apparatus according to this application, the pre-temperature value is the temperature inside the reaction chamber before the gaseous precursor is introduced into the reaction chamber, and the pre-pressure value is the pressure inside the reaction chamber before the gaseous precursor is introduced into the reaction chamber.

[0018] In the control method for an atomic layer deposition coating apparatus according to this application, in step S110, the preparatory temperature value in the reaction chamber is obtained by the temperature sensor of the atomic layer deposition coating apparatus, and in step S140, the preparatory pressure value in the reaction chamber is obtained by the pressure sensor of the atomic layer deposition coating apparatus.

[0019] In the control method for an atomic layer deposition coating apparatus according to this application, the preset temperature range is higher than or equal to a preset temperature threshold, and the first preset pressure range is lower than or equal to a first preset pressure threshold.

[0020] In the control method for an atomic layer deposition coating apparatus according to this application, in step S160, the air inlet valve connected to the air inlet channel of the atomic layer deposition coating apparatus is controlled to open, so that the air inlet channel is in an open state.

[0021] In the control method for an atomic layer deposition coating apparatus according to this application, in step S170, the vent valve of the atomic layer deposition coating apparatus connected to the air blowing channel is controlled to open.

[0022] In the control method for an atomic layer deposition coating apparatus according to this application, in step S180, after a preset time has elapsed since the air inlet channel of the atomic layer deposition coating apparatus has been kept in the open state, the pressure relief valve of the atomic layer deposition coating apparatus is kept in the open state.

[0023] In the control method for an atomic layer deposition coating apparatus according to this application, the control method for the atomic layer deposition coating apparatus further includes: S190, controlling the suction device of the atomic layer deposition coating apparatus to operate so as to suck out the gas or residue in the reaction chamber.

[0024] According to another aspect of this application, an electronic device is provided, comprising: a memory and a processor, wherein computer program instructions are stored in the memory, the computer program instructions, when executed by the processor, cause the processor to perform the control method for an atomic layer deposition coating apparatus as described above.

[0025] The further objectives and advantages of this application will become fully apparent from the following description and accompanying drawings.

[0026] These and other objects, features and advantages of this application are fully apparent from the following detailed description, the accompanying drawings and the claims. Attached Figure Description

[0027] The above and other objects, features, and advantages of this application will become more apparent from the more detailed description of the embodiments of this application in conjunction with the accompanying drawings. The drawings are provided to further illustrate the embodiments of this application and form part of the specification. They are used together with the embodiments of this application to explain this application and do not constitute a limitation thereof. In the drawings, the same reference numerals generally represent the same components or steps.

[0028] Figure 1 The illustration shows a schematic block diagram of an atomic layer deposition coating apparatus according to an embodiment of this application.

[0029] Figure 2 The figure shows a schematic block diagram of an automated management system for an atomic layer deposition coating apparatus according to an embodiment of the present application.

[0030] Figure 3 The figure shows a schematic block diagram of the relationships between some components of an automated management system for an atomic layer deposition coating apparatus according to an embodiment of this application.

[0031] Figure 4 The illustration shows a flowchart of a control method for an atomic layer deposition coating apparatus according to an embodiment of this application.

[0032] Figure 5The illustration shows a process for manufacturing a substrate with a thin film deposited by a control method for an atomic layer deposition coating apparatus according to an embodiment of this application. Detailed Implementation

[0033] Hereinafter, exemplary embodiments according to this application will be described in detail with reference to the accompanying drawings. Obviously, the described embodiments are merely some embodiments of this application, and not all embodiments of this application. It should be understood that this application is not limited to the exemplary embodiments described herein.

[0034] It is understood that the term "a" should be understood as "at least one" or "one or more," meaning that in one embodiment, the number of an element can be one, while in another embodiment, the number of the element can be multiple. The term "a" should not be construed as a limitation on the quantity. "Multiple" means two or more.

[0035] While ordinal numbers such as "first," "second," etc., will be used to describe various components, there is no limitation on which components are used herein. The term is used only to distinguish one component from another. For example, a first component may be referred to as a second component, and similarly, a second component may be referred to as a first component, without departing from the teachings of this application. The term "and / or" as used herein includes any and all combinations of one or more of the associated listed items.

[0036] The terminology used herein is for the purpose of describing various embodiments only and is not intended to be limiting. As used herein, the singular form also includes the plural form, unless the context clearly indicates otherwise. It will also be understood that the terms “comprising” and / or “having” as used in this specification specify the presence of the described features, numbers, steps, operations, components, elements or combinations thereof, without excluding the presence or addition of one or more other features, numbers, steps, operations, components, elements or groups thereof.

[0037] Schematic atomic layer deposition equipment and its control system: such as Figures 1 to 3 As shown, an atomic layer deposition (ALD) coating apparatus and a control system for the ALD coating apparatus according to embodiments of this application are illustrated. The control system for the ALD coating apparatus is communicatively connected to the ALD coating apparatus. The control system can control multiple components of the ALD apparatus according to configuration data, enabling the ALD coating apparatus to manufacture a substrate with a specific thin film according to a predetermined production process. Furthermore, the control system for the ALD coating apparatus can receive data from multiple components of the ALD coating apparatus in real time and adjust the multiple components of the ALD apparatus based on the received data.

[0038] In the embodiments of this application, such as Figure 1As shown, the atomic layer deposition coating equipment includes a reaction chamber, a temperature sensor, a pressure sensor, a vacuum pump, a heater, an air inlet channel, a blower channel, an exhaust channel, an air inlet valve, a vent valve, and a vent valve.

[0039] Specifically, the atomic layer deposition (ALD) equipment has a substrate placement area in its reaction chamber for placing the substrate to be deposited. A temperature sensor is located within the reaction chamber to measure the gas pressure. A pressure sensor is connected to the reaction chamber to measure the gas pressure. A vacuum pump is connected to the reaction chamber to draw air from it. A heater is connected to the reaction chamber to heat the gas within it, thereby increasing the temperature.

[0040] The air inlet channel is connected to the reaction chamber and is used to introduce a gaseous precursor, allowing the gaseous precursor to undergo a gas-solid phase chemical adsorption reaction with the substrate to form a thin film. Optionally, the atomic layer deposition equipment further includes a precursor housing space for storing the gaseous precursor, and the air inlet channel is connected between the reaction chamber and the precursor housing space. The air inlet valve is connected to the air inlet channel and is used to control the state of the air inlet channel; when the air inlet channel is open, the gaseous precursor can enter the reaction chamber through the air inlet channel. When the air inlet channel is closed, the gaseous precursor is blocked and cannot enter the reaction chamber through the air inlet channel.

[0041] The specific implementation of the intake valve connected to the intake channel is not limited to this application. Optionally, the intake valve may be directly installed in the intake channel, or the intake valve may be indirectly connected to the intake channel. For example, the intake channel may be connected to an intake device, and the intake device may be equipped with an intake valve.

[0042] The air blowing channel is connected to the reaction chamber and faces the substrate placement area. It is used to ventilate the substrate placed in the substrate placement area to purge the substrate after film formation, thereby removing contaminants and gases from the substrate surface to ensure the quality and performance of the film. The air vent valve is connected to the air blowing channel and is used to control the state of the air blowing channel. When the air blowing channel is in the open state, air can be blown into the reaction chamber through the air blowing channel; when the air blowing channel is in the closed state, air blowing from the air blowing channel into the reaction chamber stops.

[0043] The specific implementation of the vent valve connected to the air blowing channel is not limited to this application. Optionally, the vent valve may be directly installed in the air blowing channel, or the vent valve may be indirectly connected to the air blowing channel. For example, the air blowing channel may be connected to an air inlet device, and the air inlet device may be equipped with a vent valve.

[0044] The discharge channel is connected to the reaction chamber and is used to discharge the gas and / or residue inside the reaction chamber. The vent valve is connected to the discharge channel and is used to control the state of the discharge channel; when the discharge channel is in the open state, the gas and residue inside the reaction chamber can be discharged from the discharge channel; when the discharge channel is in the closed state, the gas and residue inside the reaction chamber cannot be discharged from the reaction chamber.

[0045] The specific implementation of the vent valve connected to the discharge channel is not limited to this application. Optionally, the vent valve may be directly installed in the discharge channel, or the vent valve may be indirectly connected to the discharge channel. For example, the discharge channel may be connected to a suction device, and the suction device may be equipped with a vent valve.

[0046] The atomic layer deposition (ALD) coating equipment also includes a pressure relief valve for depressurizing the reaction chamber, allowing it to communicate with the outside air. This adjusts the pressure within the reaction chamber to be the same as or within the set operating pressure range as the outside atmospheric pressure. This ensures the accuracy and repeatability of subsequent reactions, while also helping to protect the equipment and improve reaction efficiency. For example, when the reaction chamber is under negative pressure, opening the pressure relief valve allows the reaction chamber to communicate with the outside air, causing the air pressure in the reaction chamber to rise.

[0047] like Figure 2 and 3 As shown, the control system for the atomic layer deposition coating equipment includes a communication unit, a controller unit, a data storage unit, an interactive interface, and a data processing unit.

[0048] Specifically, the communication unit includes a receiver and a driver. The receiver is used to receive data from the atomic layer deposition equipment, such as the pre-temperature value and the pre-pressure value of the reaction chamber of the atomic layer deposition equipment. The driver is used to send signals to the atomic layer deposition equipment.

[0049] The controller unit includes a vacuum valve controller, a pressure relief valve controller, and a vent valve controller. The vacuum valve controller and / or the vacuum valve controller control the operating state of the vacuum pump, thereby controlling the gas pressure within the reaction chamber. The pressure relief valve controller controls the operating state of the pressure relief valve, thereby controlling the gas pressure within the reaction chamber. The vent valve controller controls the operating state of the vent valve, thereby controlling the state of the discharge channel.

[0050] The database storage unit includes a log recording module and a configuration database. The log recording module is used to log information from each controller in the controller unit, thereby recording the production information of the atomic layer deposition coating equipment in real time. The configuration database is used to store the production process environment configuration required for the production of the atomic layer deposition coating equipment.

[0051] The interactive interface includes a production status visualization interface and a configuration interface. The production status visualization interface displays real-time controller information for each controller in the controller unit, as well as real-time data from the pressure and temperature sensors of the atomic layer deposition (ALD) coating equipment. The configuration interface is used to configure specific parameters during the production process, including evacuation time, pressure limits, and temperature limits. Users can set these parameters through the configuration interface, or through other interfaces, such as a settings interface. The configuration interface is used to configure the specific workflow executed during automated production. The configuration database is connected to the configuration interface and can send information from the database to the configuration interface to update its configuration.

[0052] The data processing unit is used to analyze the data it receives, for example, to analyze the pre-temperature value of the reaction chamber transmitted by the atomic layer deposition coating equipment and determine whether it exceeds a preset threshold; and to analyze the pre-pressure value of the reaction chamber transmitted by the atomic layer deposition coating equipment and determine whether it exceeds a preset threshold.

[0053] Schematic illustration of control methods for atomic layer deposition (ALD) equipment: such as Figure 4As shown, this application proposes a control method for an atomic layer deposition (ALD) coating apparatus, comprising: S110, acquiring a pre-temperature value and a preset temperature range of the reaction chamber of the ALD coating apparatus; S120, in response to the pre-temperature value not being within the preset temperature range, controlling the operating state of the heater of the ALD coating apparatus to ensure that the pre-temperature value of the ALD coating apparatus is within the preset temperature range; S130, in response to the pre-temperature value being within the preset temperature range, controlling the exhaust valve of the ALD coating apparatus to enter the operating state; S140, acquiring a pre-pressure value and a first preset pressure range of the reaction chamber of the ALD coating apparatus; S150, in response to the pre-pressure value not being within the first preset temperature range, controlling the operating state of the heater of the ALD coating apparatus to ensure that the pre-temperature value of the ALD coating apparatus is within the preset temperature range; S160, in response to the pre-pressure value not being within the first preset temperature range, controlling the operating state of the heater of the ALD coating apparatus to ensure that the pre-temperature value of the ALD coating apparatus is within the preset temperature range; S170, in response to the pre-pressure value not being within the first preset temperature range, controlling the operating state of the heater of the ALD coating apparatus to ensure that the pre-temperature value of the ALD coating apparatus is within the preset temperature range; S180, in response to the pre-pressure value not being within the first preset temperature range, controlling the operating state of the heater of the ALD coating apparatus to ensure that the pre-temperature value of the ALD coating apparatus is within the preset temperature range; S190, in response to the pre-pressure value not being within the first preset temperature range, controlling the operating state of the heater of the ALD coating apparatus to ensure that the pre-temperature value of the ALD coating apparatus is within the preset temperature range; S1112, in response to the pre-temperature value not being within the first preset temperature range, controlling the operating state of the heater of the ALD coating apparatus to ensure that the pre-temperature value of the ALD coating apparatus is within the preset temperature range; S111 Within a preset pressure range, the working state of the exhaust valve of the atomic layer deposition coating equipment is controlled so that the pre-pressure value of the atomic layer deposition coating equipment is within the first preset pressure range; S160, in response to the pre-pressure value being within the first preset pressure range, the air inlet channel of the atomic layer deposition coating equipment is controlled to be open, so that the gas phase precursor enters the reaction chamber from the air inlet channel and reacts with the substrate in the reaction chamber, thereby generating a coating on the surface of the substrate; S170, the air blowing channel of the atomic layer deposition coating equipment is controlled to be open, so that the substrate placed in the reaction chamber is purged by the gas in the air blowing channel; and S180, the pressure relief valve of the atomic layer deposition coating equipment is controlled to be open.

[0054] In step S110, the pre-temperature value and preset temperature range of the reaction chamber of the atomic layer deposition (ALD) equipment are obtained. Specifically, the pre-temperature value is the temperature inside the reaction chamber before the vapor precursor is introduced. The pre-temperature value inside the reaction chamber is obtained using a temperature sensor of the ALD equipment. The preset temperature range is set according to the production process requirements.

[0055] In step S120, in response to the pre-set temperature value not being within the preset temperature range, the operating state of the heater of the atomic layer deposition (ALD) equipment is controlled so that the pre-set temperature value of the ALD equipment is within the preset temperature range. For example, the preset temperature range is higher than or equal to a preset temperature threshold. When the pre-set temperature value is lower than the preset temperature threshold, the heater of the ALD equipment is controlled to continue heating. The preset temperature threshold can be set according to requirements, for example, 200 degrees Celsius.

[0056] In step S140, the pre-pressure value and a first preset pressure range of the reaction chamber of the atomic layer deposition (ALD) equipment are obtained. Specifically, the pre-pressure value is the pressure inside the reaction chamber before the vapor precursor is introduced. The pre-pressure value inside the reaction chamber is obtained through a pressure sensor of the ALD equipment. The first preset pressure range is set according to production process requirements.

[0057] In step S150, in response to the preparatory pressure value not being within the first preset pressure range, the operating state of the air extraction valve of the atomic layer deposition coating equipment is controlled so that the preparatory pressure value of the atomic layer deposition coating equipment is within the first preset pressure range. For example, the first preset pressure range is lower than or equal to a first preset pressure threshold. When the first preset pressure threshold is higher than the first preset pressure threshold, the air extraction valve of the atomic layer deposition coating equipment is controlled to continue extraction.

[0058] In step S160, in response to the pre-set pressure value being within the first preset pressure range, the air inlet channel of the atomic layer deposition coating equipment is controlled to be in an open state. Specifically, the air inlet valve connected to the air inlet channel of the atomic layer deposition coating equipment is controlled to open, so that the air inlet channel is in an open state.

[0059] In step S170, the blowing channel of the atomic layer deposition coating equipment is controlled to be in the open state. Specifically, the vent valve connected to the blowing channel of the atomic layer deposition coating equipment is controlled to open, so that the blowing channel is in the open state, so as to blow away the substrate after the film is formed, thereby removing contaminants and gases from the surface of the substrate after the film is formed, ensuring the quality and performance of the film.

[0060] In step S180, the pressure relief valve of the atomic layer deposition coating equipment is controlled to be in the open state. Specifically, after a preset time has elapsed since the air inlet channel of the atomic layer deposition coating equipment was opened, the pressure relief valve of the atomic layer deposition coating equipment is controlled to be in the open state, so that the pressure value in the reaction chamber is adjusted to be the same as the external atmospheric pressure or within a second preset pressure range.

[0061] In some embodiments of this application, the control method for the atomic layer deposition coating equipment further includes: S190, controlling the suction device of the atomic layer deposition coating equipment to operate so as to suck out the gas or residue in the reaction chamber.

[0062] Figure 5The illustration shows a schematic diagram of a process for manufacturing a substrate with a deposited thin film using a control method for an atomic layer deposition (ALD) apparatus according to an embodiment of this application. Specifically, firstly, the substrate is placed in the reaction chamber of the ALD apparatus; then, a pre-temperature value of the reaction chamber is obtained, and a preset temperature range set by the control system of the ALD apparatus is obtained. The data processing unit of the ALD apparatus determines whether the pre-temperature value is higher than or equal to a preset temperature threshold, for example, 200 degrees Celsius. If the pre-temperature value is lower than the preset temperature threshold, the control system of the ALD apparatus controls the heater of the ALD apparatus, causing the heating pipe connected between the heater and the reaction chamber to be heated, thereby increasing the pre-temperature value of the reaction chamber until it reaches the preset temperature threshold. If the pre-temperature value reaches the preset temperature threshold, the control system of the ALD apparatus controls the opening of the suction valve of the suction pump of the ALD apparatus. Next, the pre-pressure value of the reaction chamber of the ALD apparatus and the pressure range of the ALD apparatus are obtained. The system sets a first preset pressure range and determines whether the preset pressure value is below or equal to a first preset pressure threshold through the data processing unit of the system for atomic layer deposition coating equipment. When the preset pressure value is higher than the first preset pressure threshold, i.e., a vacuum threshold, the system controls the vacuum valve of the vacuum pump to remain open, so that the vacuum pump continues to evacuate. When the preset pressure value reaches the first preset pressure threshold, the system controls the air inlet channel of the atomic layer deposition coating equipment to open, allowing the chemical reactants, i.e., the gaseous precursor, to enter the reaction chamber, so that a thin film is formed on the surface of the substrate. Then, the system controls the air blowing channel of the atomic layer deposition coating equipment to be open, so that the substrate placed in the reaction chamber is purged by the gas in the air blowing channel. After a preset time, the system controls the pressure relief valve of the atomic layer deposition coating equipment to be open to depressurize the reaction chamber. Finally, the substrate with the formed thin film is removed.

[0063] Exemplary Electronic Device: According to another aspect of this application, an electronic device is also provided. The electronic device includes a memory and a processor, wherein computer program instructions are stored in the memory, and when executed by the processor, the computer program instructions cause the processor to perform the control method for an atomic layer deposition coating apparatus as described above.

[0064] Here, those skilled in the art will understand that the specific functions and operations of the processor have been referenced above. Figure 4 and Figure 5The control method for atomic layer deposition coating equipment is described in detail therein, and therefore its repeated description will be omitted.

[0065] In summary, a control system, method, and electronic device for an atomic layer deposition coating apparatus based on embodiments of this application have been elucidated. The control system for the atomic layer deposition (ALD) equipment boasts powerful data acquisition, processing, display, and storage capabilities, offering a superior human-machine interface. This control system automates the control and monitoring of the ALD equipment, improving its efficiency and production speed. The corresponding program for the control method can run on terminal devices with different operating systems (e.g., computers), enabling interaction between operators and the control system, providing a better user experience and reducing learning costs. The control system also precisely controls and monitors the ALD equipment, enhancing its accuracy and stability, and supports more complex algorithms. Furthermore, it displays data and equipment status via a graphical interface, allowing users to intuitively understand the equipment's operation. Finally, the control system enables remote control and monitoring via a network, allowing users to operate and manage the ALD equipment anytime, anywhere.

[0066] The present application and its embodiments have been described above. This description is not restrictive, and the accompanying drawings are only one embodiment of the present application. The actual structure is not limited to this. In conclusion, if a person skilled in the art is inspired by this description and designs a similar structure and embodiment without departing from the spirit of the present application, such design should fall within the protection scope of the present application.

Claims

1. A control system for an atomic layer deposition (ALD) coating apparatus, characterized in that, include: A communication unit, comprising a receiver and a driver, wherein the receiver is used to receive data from an atomic layer deposition equipment, and the driver is used to send signals to the atomic layer deposition equipment; A controller unit connected to the communication unit includes a vacuum valve controller, a pressure relief valve controller, and a vent valve controller. The vacuum valve controller and / or the vacuum valve controller are used to control the working state of the vacuum pump of the atomic layer deposition coating equipment. The pressure relief valve controller is used to control the working state of the pressure relief valve of the atomic layer deposition coating equipment. The vent valve controller is used to control the working state of the vent valve of the atomic layer deposition coating equipment. A data storage unit connected to the controller unit includes a database storage unit comprising a log recording module and a configuration database. The log recording module is used to log information of each controller in the controller unit, and the configuration database is used to store the production process environment configuration required for the production of the atomic layer deposition coating equipment. as well as An interactive interface connected to the data storage unit includes a production status visualization interface and a configuration interface. The production status visualization interface is used to display the controller information of each controller in the controller unit in real time, as well as the real-time data of the pressure sensor and temperature sensor of the atomic layer deposition coating equipment. The configuration interface is used to configure parameters in the production process.

2. A control method for an atomic layer deposition (ALD) coating apparatus, characterized in that, include: S110, obtain the pre-temperature value and preset temperature range of the reaction chamber of the atomic layer deposition coating equipment; S120, in response to the preparatory temperature value not being within the preset temperature range, control the operating state of the heater of the atomic layer deposition coating equipment so that the preparatory temperature value of the atomic layer deposition coating equipment is within the preset temperature range; S130, in response to the pre-temperature value being within the preset temperature range, control the air extraction valve of the atomic layer deposition coating equipment to enter the working state; S140, obtain the pre-pressure value and the first preset pressure range of the reaction chamber of the atomic layer deposition coating equipment; S150, in response to the fact that the preparatory pressure value is not within the first preset pressure range, control the working state of the air extraction valve of the atomic layer deposition coating equipment so that the preparatory pressure value of the atomic layer deposition coating equipment is within the first preset pressure range. S160, in response to the pre-pressure value being within the first preset pressure range, the air inlet channel of the atomic layer deposition coating equipment is controlled to be open, so that the gas phase precursor enters the reaction chamber from the air inlet channel and reacts with the substrate in the reaction chamber, thereby generating a coating on the surface of the substrate. S170, the blowing channel of the atomic layer deposition coating equipment is controlled to be in the open state, so that the substrate placed in the reaction chamber is swept by the gas in the blowing channel; and... S180, the pressure relief valve of the atomic layer deposition coating equipment is in the open state.

3. The control method for an atomic layer deposition coating apparatus according to claim 1, characterized in that, The pre-treatment temperature is the temperature inside the reaction chamber before the gaseous precursor is introduced into the reaction chamber, and the pre-treatment pressure is the pressure inside the reaction chamber before the gaseous precursor is introduced into the reaction chamber.

4. The control method for an atomic layer deposition coating apparatus according to claim 1, characterized in that, In step S110, the preparatory temperature value in the reaction chamber is obtained by the temperature sensor of the atomic layer deposition coating equipment. In step S140, the preparatory pressure value in the reaction chamber is obtained by the pressure sensor of the atomic layer deposition coating equipment.

5. The control method for an atomic layer deposition coating apparatus according to claim 1, characterized in that, The preset temperature range is higher than or equal to a preset temperature threshold, and the first preset pressure range is lower than or equal to a first preset pressure threshold.

6. The control method for an atomic layer deposition coating apparatus according to claim 1, characterized in that, In step S160, the air inlet valve of the atomic layer deposition coating equipment connected to the air inlet channel is opened, so that the air inlet channel is in the open state.

7. The control method for an atomic layer deposition coating apparatus according to claim 1, characterized in that, In step S170, the vent valve connected to the air blowing channel of the atomic layer deposition coating equipment is opened.

8. The control method for an atomic layer deposition coating apparatus according to claim 1, characterized in that, In step S180, after a preset time has elapsed since the air inlet channel of the atomic layer deposition coating equipment has been kept in the open state, the pressure relief valve of the atomic layer deposition coating equipment is kept in the open state.

9. The control method for an atomic layer deposition coating apparatus according to claim 1, characterized in that, The control method for the atomic layer deposition coating equipment further includes: S190, controlling the suction device of the atomic layer deposition coating equipment to operate so as to suck out the gas or residue in the reaction chamber.

10. An electronic device, characterized in that, include: A memory and a processor, wherein the memory stores computer program instructions that, when executed by the processor, cause the processor to perform a control method for an atomic layer deposition coating apparatus as described in any one of claims 2 to 9.

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