Packaging element with hole wall forming side wettable structure

Abstract

The invention relates to a packaging element with a side wettable structure formed on a hole wall, a composite substrate of the packaging element is covered with a plastic packaging layer, a top redistribution layer is formed on the plastic packaging layer, the edge of the top surface of the top redistribution layer is not covered by an insulation protection layer, so that at least one edge welding surface is formed, and the edge welding surface is welded on the top surface of the top redistribution layer. At least one conductive pin formed by cutting at least one conductive hole is arranged adjacent to the edge of the composite substrate, each edge welding surface is respectively connected with the cutting surface of each conductive pin, and each edge welding surface and the side wall of each conductive pin are respectively provided with an anti-oxidation metal layer for follow-up soldering tin to climb. In addition, the original conductive hole in the packaging element is moved outwards to the edge of the whole, so that the structure with the wettable side face can be formed through one-time cutting, and the complexity of the manufacturing process is reduced.

Description

Technical Field

[0001] This invention relates to side-wettable semiconductor packaging technology, and in particular to a packaged element with a side-wettable structure formed on the hole walls. Background Technology

[0002] Common mounting methods for packaged components include through-hole mounting technology and surface mount technology (SMT). Through-hole mounting technology involves inserting the leads on the packaged component into corresponding holes on the circuit board and then filling them with solder to secure them. Surface mount technology involves aligning the pads on the packaged component with the solder joints on the circuit board and then bonding them together with solder. Common surface mount packaged components include quad flat no-lead (QFN) and double flat no-lead (DFN).

[0003] The solder pads of these types of packaged components often have a side wettable structure to allow automated optical inspection (AOI) instruments to determine whether the packaged component is properly soldered onto the circuit board based on the solder adhesion pattern on the side of the component. Please refer to [link to relevant documentation]. Figure 5 A conventional packaged element 80 has a bottom pad 81, which may be formed, for example, by a lead frame and has a recessed area 82. The recessed area 82 allows solder to adhere and forms a side-wetting structure. The recessed area 82 is pre-prepared by the lead frame before the packaging process, or formed by multiple cuts of the lead frame during the packaging process. This process requires more steps and is more complex, resulting in higher manufacturing costs. Furthermore, the height to which solder can adhere on the side of the lead frame (the side of the bottom pad 81) of the packaged element 80 is still not high enough. Summary of the Invention

[0004] In view of this, the present invention proposes a packaging element with a side-wettable structure formed on the hole wall to reduce the complexity of the process of forming the side-wettable structure.

[0005] To achieve the aforementioned objective, the present invention provides an encapsulation element with a side-wettable structure formed on the hole wall, comprising:

[0006] A composite substrate having a conductive layer on its outer side and an accommodating space on its inner side;

[0007] A single grain is disposed within this accommodating space;

[0008] A molding compound is applied to the composite substrate and fills the accommodating space to encapsulate the grain.

[0009] A top redistribution layer is disposed on the encapsulation layer;

[0010] An insulating protective layer covers the top-weighted wiring layer and exposes the top edge of the top-weighted wiring layer to form at least one edge soldering surface; and

[0011] At least one conductive pin, each conductive pin is formed by cutting at least one conductive hole and is located adjacent to the edge of the composite substrate, and each conductive pin is electrically connected to the edge welding surface and the conductive layer of the composite substrate.

[0012] The position of each edge welding surface corresponds to the position of each conductive pin, and each edge welding surface is connected to the sidewall of each conductive pin. Each edge welding surface and the sidewall of each conductive pin have an anti-oxidation conductive layer.

[0013] The present invention provides a package element with a side-wettable structure formed by forming hole walls. The conductive holes connecting the top heavy-duty wiring layer and the conductive layer of the composite substrate are moved to the edge of the entire package element. This allows each conductive hole to be cut during the standardization of the package element. The portion of each conductive hole remaining in the package element after cutting is defined as the conductive pin. Since the side of each conductive pin (the cut surface of the standardization) exposes a metal layer, the anti-oxidation metal layer can be deposited on the side of each conductive pin to form a side-wettable structure. Compared with the prior art, which requires pre-processing of the lead frame before the process or multiple cutting of the lead frame during the packaging process to form a side-wettable structure, the structural improvement of the package element of the present invention can form a side-wettable structure by a single cutting (standardization) without additional cutting, thereby reducing the complexity of the process and saving production costs.

[0014] Furthermore, the antioxidant metal layer is used for solder to adhere to, and the side of each conductive pin can be plated with the antioxidant metal layer, which increases the area on which solder can adhere when the packaged element of the present invention is soldered to another element, thereby improving the stability of the packaged element fixed to another element. Moreover, the side of the packaged element of the present invention can adhere to more solder than the prior art, which can also improve the interpretation capability of automatic optical inspection instruments and has the effect of stabilizing the automated production process. Attached Figure Description

[0015] Figure 1 : A side cross-sectional view of the composite substrate in the packaging element of the present invention.

[0016] Figures 2A to 2N : A schematic diagram of the manufacturing process of the first embodiment of the present invention.

[0017] Figure 2O : A schematic diagram of the appearance of the first embodiment of the packaged element of the present invention.

[0018] Figure 2P : A schematic diagram illustrating the application of the first embodiment of the packaging element of the present invention.

[0019] Figures 3A to 3O : A schematic diagram of the manufacturing process of the second embodiment of the present invention.

[0020] Figure 3P : A schematic diagram of the appearance of a second embodiment of the packaging element of the present invention.

[0021] Figure 3Q : A schematic diagram illustrating the application of a second embodiment of the packaging element of the present invention.

[0022] Figures 4A to 4N : A schematic diagram of the manufacturing process of the second embodiment of the present invention.

[0023] Figure 4O : A schematic diagram of the appearance of the third embodiment of the packaging element of the present invention.

[0024] Figure 4P : A schematic diagram illustrating the application of the third embodiment of the packaging element of the present invention.

[0025] Figure 5 : A partial side cross-sectional view of an existing packaged component. Detailed Implementation

[0026] To gain a detailed understanding of the technical features and practical effects of the present invention, and to enable its implementation according to the invention, the following detailed description is provided with reference to the embodiments shown in the figures:

[0027] This invention relates to a packaged element with a wettable sidewall structure formed on the aperture walls. This packaged element can be a panel-level package (PLP) element. A panel-level package (PLP) refers to a packaging process that encapsulates one or more dies (dies) that have completed the fabrication of an integrated circuit, using a substrate as a carrier. The following illustrations explain the fabrication method and structure of the packaged element with a wettable sidewall structure formed on the aperture walls according to this invention.

[0028] Please see Figure 1 , Figure 1 This is a side cross-sectional view of a composite substrate 10. The composite substrate 10 is formed by providing an upper metal sheet 11A and a lower metal sheet 11B on the top and bottom surfaces of a base layer 11, respectively. For example, the composite substrate 10 can be a copper foil substrate (CCL), that is, the upper metal sheet 11A and the lower metal sheet 11B are copper foils, and the material of the base layer 11 can be resin.

[0029] Figures 2A to 2N This is a schematic diagram of a first embodiment of the fabrication process of a packaged element with a hole wall forming a side wettable structure according to the present invention. Please refer to the diagram first. Figure 2A A receiving space 100 is formed on the composite substrate 10. Specifically, Figure 2A Formed by multiple manufacturing processes, before forming the accommodating space 100, the composite substrate 10 can be drilled to form at least one through hole on the composite substrate 10. Then, the top and bottom surfaces of the composite substrate 10 are deposited so that a deposited metal M is disposed in each through hole to form a conductive pillar 101, wherein the deposited metal M can be, for example, copper.

[0030] Furthermore, during the metal deposition process, the deposited metal M deposited on the outside of the composite substrate 10, together with the upper metal sheet 11A and the lower metal sheet 11B, forms a conductive layer. Specifically, the conductive layer includes a top conductive layer 12 and a bottom conductive layer 13. The top conductive layer 12 is located on the front side of the composite substrate 10 and is formed by the upper metal sheet 11A and the deposited metal M of the composite substrate 10. The bottom conductive layer 13 is located on the back side of the composite substrate 10 and is formed by the lower metal sheet 11B and the deposited metal M of the composite substrate 10. The top conductive layer 12 and the bottom conductive layer 13 can be electrically connected through the aforementioned conductive post 101.

[0031] Next, a drilling process is performed on the composite substrate 10 on which the conductive pillars 101 are formed to form the accommodating space 100 penetrating the composite substrate 10. Please refer to [link to relevant documentation]. Figure 2B An adhesive film 20 is attached to the bottom conductive layer 13 to seal the bottom of the accommodating space 100. See also... Figure 2C A die 30 is disposed in the accommodating space 100 and on the adhesive film 20. Specifically, the bottom surface of the die 30 is fixed on the adhesive film 20, and the top and side surfaces of the die 30 are exposed in the accommodating space 100.

[0032] Please see Figure 2D An insulating material 40 is disposed on the composite substrate 10 and the insulating material 40 is laminated to achieve the desired effect. Figure 2E As shown, a molding compound 41 is formed, which covers the composite substrate 10 and fills the accommodating space 100 to encapsulate the grain 30. Specifically, during the lamination process, the insulating material 40 is heated and melted, exhibiting semi-cured properties and flowing to cover the surface of the composite substrate 10 and fill the accommodating space 100 of the composite substrate 10. After the heated insulating material 40 cools and solidifies, the molding compound 41 is formed. The grain 30 is then encapsulated by the molding compound 41 and fixedly disposed in the accommodating space 100 of the composite substrate 10.

[0033] Next, a top redundancy layer is formed on the molding compound 41. This top redundancy layer electrically connects the die 30 and the conductive layer of the composite substrate 10, and at least one conductive via is formed near the edge of the composite substrate 10. The edge of the composite substrate 10 is the edge of the entire packaged component, and the edge of the composite substrate 10 refers to the side surface of the composite substrate 10 exposed during subsequent standardization processes. In the first embodiment of the present invention, each conductive via is a blind via. The following will be used in conjunction with... Figures 2F to 2J The fabrication steps shown illustrate how to form the top-weighted wiring layer and the conductive blind via.

[0034] Please see Figure 2F At least one wafer connection hole 410 and at least one substrate connection hole 411 are formed in the molding compound 41. For example, the at least one wafer connection hole 410 and the at least one substrate connection hole 411 can be formed by laser drilling. The at least one wafer connection hole 410 exposes the top surface of the die 30, and the at least one substrate connection hole 411 exposes the conductive layer of the composite substrate 10. For example... Figure 2G Therefore, the adhesive film 20 attached to the bottom conductive layer 13 is removed, exposing the bottom conductive layer 13 and the bottom of the accommodating space 100 (the bottom surface of the grain 30).

[0035] Please see Figure 2H A top seed layer 50 is formed on the molding layer 41, in the at least one wafer connection hole 410 and the at least one substrate connection hole 411. The top seed layer 50 can be formed by electroplating, sputtering and other methods, and is not limited thereto. At the same time as forming the top seed layer 50, a bottom seed layer 51 can also be formed on the bottom conductive layer 13 and the bottom surface of the accommodating space 100 (the bottom surface of the die 30).

[0036] Next, please refer to Figure 2IA top metal layer 52 and a bottom metal layer 53 are electroplated on the top seed layer 50 and the bottom seed layer 51, respectively. That is, the top seed layer 50 and the top metal layer 52 are sequentially stacked on the inner walls of the molding compound 41, the at least one wafer connection hole 410 and the at least one substrate connection hole 411, and the bottom seed layer 51 and the bottom metal layer 53 are sequentially stacked on the bottom surface of the bottom conductive layer 13. The position on the top surface of the top metal layer 52 corresponding to the at least one wafer connection hole 410 and the at least one substrate connection hole 411 is recessed relative to other areas on the top surface of the top metal layer 52. Each of the above-ground metal layers 52 is plated with metal on the inner wall of each of the above-ground metal layers 410 to form a conductive blind hole. The conductive blind hole formed by each of the wafer connection holes 410 is defined as an internal conductive blind hole 520. Each of the internal conductive blind holes 520 is electrically connected to the die 30. The conductive blind hole formed by each of the substrate connection holes 411 is defined as an edge conductive blind hole 521. Each of the edge conductive blind holes 521 is electrically connected to the conductive layer of the composite substrate 10. Each of the edge conductive blind holes 521 is closer to the subsequent single-cut position than each of the internal conductive blind holes 520.

[0037] Please see Figure 2J A patterned photoresist layer PP can be respectively disposed on the top metal layer 52 and the bottom metal layer 53. Then, the top metal layer 52 and the bottom metal layer 53 not covered by the patterned photoresist layer PP are etched so that the line distribution of the top metal layer 52 and the bottom metal layer 53 is the same as the shape of the patterned photoresist layer PP. For example, Figure 2K The patterned photoresist layer PP is removed and an insulating protective layer 60 is covered on the top metal layer 52 and the bottom metal layer 53. Specifically, the top metal layer 52 defines at least one surface pad 54 through the insulating protective layer 60 thereon. The at least one surface pad 54 is the area of ​​the top metal layer 52 (the top redistribution layer) that is not covered by the insulating protective layer 60, and the position of each surface pad 54 corresponds to the position of the edge conductive blind via 521 formed by each substrate connection hole 411.

[0038] Please see Figure 2L The process involves singulation to cut and form individual package elements. Specifically, each surface pad 54 is arranged linearly, and the edge conductive blind vias 521 formed by each substrate connection hole 411 are also arranged linearly. During singulation, the surface pads 54 are cut, and the edge conductive blind vias 521 are also cut at the same time. The top surface of the portion of each surface pad 54 remaining in the package element after cutting is defined as an edge soldering surface 540.

[0039] Each of the edge conductive blind vias 521, after being cut and retained in the package element, is defined as a conductive pin 55. Each conductive pin 55 is electrically connected to each edge solder surface 540 and the conductive layer of the composite substrate 10. In the first embodiment of the present invention, each conductive pin 55 is electrically connected to the top conductive layer 12 of the composite substrate 10 by the cut surface pads 54. Since the position of each surface pad 54 corresponds to the position of each edge conductive blind via 521, the position of each edge solder surface 540 corresponds to the position of each conductive pin 55, and each edge solder surface 540 is connected to the cut surface 550 of each conductive pin 55.

[0040] In this embodiment, each edge welding surface 540 is a stepped surface, which includes a flat surface and an arc-shaped concave surface. The flat surface extends from the edge of the insulating protective layer 60 and connects to the arc-shaped concave surface. The arc-shaped concave surface is the top surface of the top metal layer 52 in the edge conductive blind hole 521, and the arc-shaped concave surface connects to the sidewall (i.e., the cut surface 550) of its corresponding conductive pin 55. Figure 2M Therefore, the cut surface 550 of the conductive pin 55 is the side of the top redundancy layer, exposing the top seed layer 50 and the top metal layer 52.

[0041] Please see Figure 2N An anti-oxidation conductive layer 70 is formed on each of the edge welding surfaces 540, the cut surfaces 550 of each of the conductive pins 55, and the side surface of the top conductive layer 12. This anti-oxidation conductive layer 70 is a side wettable flap, and its material can be metals such as tin or gold. Figures 2A to 2N After the process is completed, the first embodiment of the encapsulation element with a wettable structure on the side of the hole wall of the present invention is formed (see reference). Figure 2N Please refer to the following: Figure 2O The first embodiment of the present invention is characterized in that the antioxidant conductive layer 70 extends from the top edge of the packaged element (the edge welding surface 540) to the side surface of the packaged element (the cut surface 550 of the conductive pin 55 and the side surface of the top conductive layer 12). Since the antioxidant conductive layer 70 cannot be formed on the side wall of the molding compound 41 and the side wall of the base layer 11 of the composite substrate 10, the side wall of the molding compound 41 and the side wall of the base layer 11 will be exposed without being covered by the antioxidant conductive layer 70.

[0042] Please see Figure 2PWhen the packaged component is soldered onto the metal solder joint M1 of a circuit board P, the antioxidant conductive layer 70 can be absorbed by a solder S, so that each of the surface pads 54 can be fixed on the circuit board P and electrically connected to the metal solder joint M1 through the solder S. The structure of the antioxidant conductive layer 70 increases the contact area between the solder S and each of the surface pads 54, thereby allowing an automated optical inspection (AOI) instrument to photograph the bonding between the packaged component and the circuit board P to determine whether the packaged component is firmly attached to the circuit board P.

[0043] The packaging element of the present invention also has a second embodiment, which is also achieved by means of, as described above. Figure 1 The composite substrate 10 shown is fabricated and formed as described above. Please refer to [link / reference]. Figures 3A to 3O This is a schematic diagram of the second embodiment of the packaging element manufacturing process with a hole wall forming a side wettable structure according to the present invention. The difference from the first embodiment of the present invention is that the at least one conductive hole in the second embodiment of the present invention includes at least one edge conductive blind hole 521 and at least one conductive through hole 111.

[0044] Please refer to the following first. Figures 3A-3C Before forming the accommodating space 100, the composite substrate 10 is drilled to form at least one through hole 110, which penetrates the top and bottom surfaces of the composite substrate 10. Then, the top and bottom surfaces of the composite substrate 10 are deposited to form a conductive via 111 with the deposited metal M in each through hole 110. The top conductive layer 12 and the bottom conductive layer 13 are formed on the top and bottom surfaces of the composite substrate 10, respectively. The top conductive layer 12 and the bottom conductive layer 13 can be electrically connected through each conductive via 111. Then, the composite substrate 10 with the conductive via 111 is drilled to form the accommodating space 100 penetrating the composite substrate 10. The adhesive film 20 is attached to the bottom conductive layer 13 to seal the bottom of the accommodating space 100.

[0045] The following is as follows Figures 3D-3F The manufacturing steps shown are largely the same as those in the first embodiment of the present invention. The die 30 is disposed in the accommodating space 100, the insulating material 40 is disposed on the composite substrate 10 and the insulating material 40 is laminated to form the molding compound 41 on the composite substrate 10. The difference is that, during the lamination process, the insulating material 40, which is heated and melted, not only fills the accommodating space 100 of the composite substrate 10, but also fills each of the conductive vias 111. After the insulating material 40 cools and solidifies, the molding compound 41 is formed in each of the conductive vias 111. The die 30 is covered by the molding compound 41 and fixedly disposed in the accommodating space 100 of the composite substrate 10.

[0046] Please see Figure 3G~3K The fabrication steps for forming the top-weighted wiring layer in the second embodiment of the present invention are largely the same as those in the first embodiment of the present invention, except that, as Figure 3G As shown, when the at least one wafer connection hole 410 and the at least one substrate connection hole 411 are formed in the molding compound 41, the at least one substrate connection hole 411 exposes each of the conductive vias 111, that is, each of the substrate connection holes 411 is respectively connected to each of the conductive vias 111. Figures 3H-3K The process and Figures 2G to 2J The process is largely the same, namely, removing the adhesive film 20, forming the top seed layer 50 and the bottom seed layer 51, forming the top metal layer 52 and the bottom metal layer 53, and setting the patterned photoresist layer PP and etching it. This will not be described in detail again; however, it should be noted that... (See also...) Figure 3J The positions of the edge conductive blind holes 521 formed by the connecting holes 411 of the substrate correspond to the positions of the conductive through holes 111.

[0047] Please see Figure 3L The patterned photoresist layer PP is removed, and the insulating protective layer 60 is covered on the top metal layer 52 and the bottom metal layer 53 to define at least one surface pad 54, and the position of each surface pad 54 corresponds to the position of the edge conductive blind via 521 formed by each substrate connection hole 411 and the position of each conductive through hole 111. Figure 3M As shown, during the unification process, cutting is performed along each of the surface pads 54, and simultaneously cutting the edge conductive blind holes 521 formed by each of the substrate connection holes 411 and the conductive through holes 111 corresponding to each of the edge conductive blind holes 521. The top surface of each surface pad 54 remaining in the package element after cutting is the edge welding surface 540. In the second embodiment of the present invention, each edge welding surface 540 is also a stepped surface. The stepped surface includes a plane and an arc-shaped concave surface. The plane extends from the edge of the insulating protective layer 60 and connects to the arc-shaped concave surface. The arc-shaped concave surface is the top surface of the top metal layer 52 in the edge conductive blind hole 521, and the arc-shaped concave surface connects to the cut surface 550 of the corresponding conductive pin 55.

[0048] Each portion of the edge conductive blind via 521 and each conductive through-via 111 cut and retained in the package element is defined as a conductive pin 55. That is, a conductive pin 55 includes a portion of the edge conductive blind via 521 cut and retained, and a portion of the conductive through-via 111 cut and retained. Each conductive pin 55 is electrically connected to each edge solder surface 540 and the conductive layer of the composite substrate 10. Specifically, each portion of the conductive through-via 111 cut and retained in the package element is defined as an internal pin. Each internal pin is located in the composite substrate 10 and electrically connected to the top conductive layer 12 and the bottom conductive layer 13. Figure 3NAs shown, the cut surface 550 of each conductive pin 55 includes the side surface of the top redistribution layer (the top seed layer 50 and the top metal layer 52) and the side surface of the inner pin. Since each conductive via 111 is filled with the molding compound 41, when each conductive via 111 is cut to form the inner pin, the side surface of each inner pin will expose the molding compound 41 and the deposited metal M around it.

[0049] Please see Figure 3O An antioxidant conductive layer 70 is formed on each of the edge solder surfaces 540, the cut surfaces 550 of each of the conductive pins 55, the side surfaces of the top conductive layer 12, and the side surfaces of the bottom conductive layer 13 to complete a second embodiment of the encapsulation element with a side-wettable structure formed in the hole wall of the present invention. Specifically, the antioxidant conductive layer 70 is formed on each of the edge solder surfaces 540, the side surfaces of the top redundancy layer, the metal of each of the inner pin sides, the side surfaces of the top conductive layer 12, and the bottom conductive layer 13. Please refer to the reference. Figure 3P The appearance feature of the second embodiment of the present invention is that the antioxidant conductive layer 70 extends from the top edge of the package element (the edge welding surface 540) to the side surface of the package element (the cut surface 550 of the conductive pin 55, the side surface of the top conductive layer 12 and the side surface of the bottom conductive layer 13), that is, the side surface formed by the single cutting of the package element is almost covered by the antioxidant conductive layer 70.

[0050] Furthermore, since the antioxidant conductive layer 70 cannot be formed on the sidewalls of the base layer 11 and the molding compound 41, the sidewalls of the base layer 11 and the sidewalls of the molding compound 41 on the composite substrate 10 will be exposed without being covered by the antioxidant conductive layer 70. Moreover, the internal pins formed in the composite substrate 10 (the conductive vias 111 are cut to form the internal pins) have their deposited metal M covered by the antioxidant conductive layer 70, exposing the molding compound 41 therein. It can be observed from the side of the packaged element that there is a molding compound 41 between adjacent base layers 11, that is, the side of each internal pin exposes the molding compound 41.

[0051] Please see Figure 3Q In the second embodiment of the present invention, when soldered to the metal solder joint M1 of a circuit board P, the side surface of the packaged element formed by cutting is almost entirely covered with the anti-oxidation conductive layer 70, allowing more solder S to adhere, thereby increasing the stability of the packaged element on the circuit board P and the ability of automated optical inspection instruments to interpret it; the packaged element of the present invention also has a third embodiment, which is also related to... Figure 1 The composite substrate 10 shown is fabricated in a similar manner, except that the length of the composite substrate 10 in the third embodiment of the present invention is different from the length of the composite substrates in the first and second embodiments of the present invention.

[0052] Please see Figures 4A-4N This is a schematic diagram of the third embodiment of the manufacturing process of the encapsulated element with a wettable structure formed on the side of the hole wall of the present invention. The difference between this embodiment and the first and second embodiments of the present invention is that each conductive hole in the third embodiment is a conductive through hole 111, and the conductive through hole 111 in the third embodiment is manufactured after the molding layer 41 is formed.

[0053] Please see Figures 4A-4E The process steps for forming the molding compound 41 in the third embodiment of the present invention are generally the same as those in the first and second embodiments of the present invention. The process steps for forming the molding compound 41 include: depositing metal on the composite substrate 10 to form the top conductive layer 12 and the bottom conductive layer 13; attaching the adhesive film 20 to the bottom surface of the composite substrate 10 to form the accommodating space 100 (but not forming the at least one through hole 110 at first); setting the grain 30 in the accommodating space 100; setting the insulating material 40 on the composite substrate 10 and laminating the insulating material 40 to form the molding compound 41; and removing the adhesive film 20. The detailed manufacturing process is as described above and will not be repeated.

[0054] Please see Figure 4F and 4G At least one wafer connection hole 410 and at least one substrate connection hole 411 are formed by drilling in the molding compound 41. The at least one wafer connection hole 410 exposes the top surface of the die 30, and the at least one substrate connection hole 411 exposes the conductive layer of the composite substrate 10. At least one through hole 110 is formed in the composite substrate 10 and the molding compound 41. The difference between the at least one through hole 110 in the second embodiment of the present invention and the at least one through hole 110 in the third embodiment is that the at least one through hole 110 penetrates the molding compound 41 and the composite substrate 10, that is, the at least one through hole 110 penetrates the top surface of the molding compound 41 and the bottom surface of the composite substrate 10.

[0055] Please see Figure 4H The top seed layer 50 is formed on the molding compound 41, in the at least one wafer connection hole 410 and the at least one substrate connection hole 411, the bottom seed layer 51 is formed on the bottom conductive layer 13 and the bottom surface of the accommodating space 100 (the bottom surface of the die 30), and a back seed layer 56 is formed on the inner wall of each through hole 110. The top seed layer 50, the bottom seed layer 51 and the back seed layer 56 are interconnected. The back seed layer 56 and the top seed layer 50 and the bottom seed layer 51 can be formed by the aforementioned electroplating, sputtering and other methods, and are not limited thereto.

[0056] Please see Figure 4IThe top metal layer 52 and the bottom metal layer 53 are electroplated on the top seed layer 50 and the bottom seed layer 51, respectively, so that the conductive blind vias 520 are formed on the top surface of the top metal layer 52 at the positions corresponding to at least one wafer connection hole 410 and at least one substrate connection hole 411. Metal is deposited on the inner seed layer 56 in each via 110 to form an inner metal layer 57, so that each via 110 is a conductive via 111. That is, the top metal layer 52 and the bottom metal layer 53 can be electrically connected through the conductive via 111 (the inner metal layer 57). Each conductive via 111 is also electrically connected to the top conductive layer 12 and the bottom conductive layer 13 of the composite substrate 10. Since each conductive via 111 in the third embodiment is made after the molding compound layer 41 is formed, the conductive via 111 in the third embodiment is not filled into the molding compound layer 41.

[0057] Please see Figure 4J An insulating protective layer 60 is applied to the top metal layer 52 and the bottom metal layer 53 to define at least one surface pad 54, and the position of each surface pad 54 corresponds to the position of each conductive via 111; please refer to Figure 4K Cut along each of the surface pads 54 (single-cut), and simultaneously cut each of the conductive vias 111. The top surface of the portion of each surface pad 54 remaining in the package element after cutting is the edge welding surface 540. In the third embodiment of the present invention, the conductive blind vias 520 are not formed on each of the surface pads 54, so each edge welding surface 540 is a plane extending from the edge of the insulating protective layer 60.

[0058] Each of the conductive vias 111, after being cut and remaining in the packaged element, is defined as a conductive pin 55. Since each conductive via 111 penetrates the molding compound 41 and the composite substrate 10, each conductive pin 55 extends from the surface pad 54 to the bottom conductive layer 13 of the composite substrate 10. Each conductive pin 55 can be divided into two parts: the conductive pin extending from the surface pad 54 to the composite substrate 10 is defined as a connecting pin; the conductive pin 55 located in the composite substrate 10 for electrically connecting the top conductive layer 12 and the bottom conductive layer 13 is defined as an internal pin, and each connecting pin is respectively connected to its corresponding internal pin. Please refer to [link to relevant documentation]. Figure 4L and 4M Each conductive pin 55 has a cut surface 550 that is connected to its corresponding edge soldering surface 540. The cut surface 550 of each conductive pin 55 includes the side of the top-weighted wiring layer (the surface solder pad 54), the side of the connecting pin, and the side of the inner pin.

[0059] Please see Figure 4NAn antioxidant conductive layer 70 is formed on each of the edge welding surfaces 540, the cut surfaces 550 of each of the conductive pins 55, the side surfaces of the top conductive layer 12, and the side surfaces of the bottom conductive layer 13 to complete the third embodiment of the encapsulation element with a side-wettable structure formed by forming the hole wall of the present invention; please refer to the reference. Figure 4O The appearance feature of the third embodiment of the present invention is that the antioxidant conductive layer 70 extends from the top edge of the package element (the edge welding surface 540) to the side surface of the package element (the cut surface 550 of the conductive pin 55, the side surface of the top conductive layer 12 and the side surface of the bottom conductive layer 13), that is, the side surface formed by the single cutting of the package element is almost covered by the antioxidant conductive layer 70.

[0060] The difference in appearance between the third embodiment and the second embodiment of the present invention is that, in the third embodiment, each edge welding surface 540 is a plane, and since the molding compound 41 is not filled in each conductive via 111, the adjacent base layers 11 on the side surface formed by the individual cutting of the packaged element (i.e., the side surface of each internal pin) are covered by the antioxidant conductive layer 70 and the molding compound 41 is not exposed; please refer to Figure 4P In the third embodiment of the present invention, when the metal solder joint M1 is soldered to a circuit board P, the side surface of the packaged element is almost formed with the anti-oxidation conductive layer 70, which allows a large amount of solder S to adhere, thereby increasing the stability of the packaged element on the circuit board P and the ability of automatic optical inspection instruments to interpret it.

[0061] In the manufacturing process of the packaged element with a side-wettable structure formed by the hole wall of the present invention, the conductive holes of the conductive layer connecting the top heavy-duty wiring layer and the composite substrate 10 are moved to the edge of the entire packaged element, so that each conductive hole can be cut when the packaged element is simplified. The portion of each conductive hole remaining in the packaged element after cutting is defined as a conductive pin 55. Since the cut surface 550 of each conductive pin 55 exposes a metal layer, the anti-oxidation conductive layer 70 can be deposited on the cut surface of each conductive pin 55 to form a side-wettable structure. Compared with the prior art, which requires pre-processing of the lead frame before the process or multiple cutting of the lead frame during the packaging process to form a side-wettable structure, the structural improvement of the packaged element of the present invention can form a side-wettable structure by cutting once (simplification) without additional cutting, thereby reducing the complexity of the process and saving production costs.

[0062] The antioxidant conductive layer 70 is used for solder to adhere to, and the side of each conductive pin 55 can be plated with the antioxidant conductive layer 70, which increases the area on which solder can adhere when the packaged component of the present invention is soldered to another component, thereby improving the stability of the packaged component fixed to another component. Moreover, the side of the packaged component of the present invention can adhere to more solder than the prior art, which can also improve the interpretation capability of automatic optical inspection instruments and has the effect of stabilizing the automated production process.

[0063] The above description is merely a preferred embodiment of the present invention and is not intended to limit the present invention in any way. Although the present invention has been disclosed above with reference to preferred embodiments, it is not intended to limit the present invention. Any person skilled in the art can make some modifications or alterations to the above-disclosed technical content to create equivalent embodiments without departing from the scope of the technical solution of the present invention. Any simple modifications, equivalent changes and alterations made to the above embodiments based on the technical essence of the present invention without departing from the content of the technical solution of the present invention shall still fall within the scope of the technical solution of the present invention.

Claims

1. A packaged element with a side-wettable structure formed on the hole wall, characterized in that, Include: A composite substrate having a conductive layer on its outer side and an accommodating space on its inner side; A single grain is disposed within this accommodating space; A molding compound is applied to the composite substrate and fills the accommodating space to encapsulate the grain. A top redistribution layer is disposed on the encapsulation layer; An insulating protective layer covers the top-load wiring layer and exposes the edge of the top-load wiring layer to form at least one edge solder surface; and At least one conductive pin, each conductive pin is formed by cutting at least one conductive hole and is located adjacent to the edge of the composite substrate, and each conductive pin is electrically connected to the edge welding surface and the conductive layer of the composite substrate. Each of the conductive pins includes a cut surface, the cut surface includes the side of the top heavy wiring layer and connects to the at least one edge soldering surface, and each edge soldering surface and each of the conductive pins has an anti-oxidation conductive layer.

2. The encapsulation element with a side-wettable structure formed by the hole wall as described in claim 1, characterized in that, Each edge welding surface is a stepped surface, which includes a flat surface and an arc-shaped concave surface. The flat surface extends from the edge of the insulating protective layer and connects to the arc-shaped concave surface. The arc-shaped concave surface connects to a cut surface of the corresponding conductive pin.

3. The encapsulation element with a side-wettable structure formed by the hole wall as described in claim 2, characterized in that, The conductive layer of the composite substrate includes a top conductive layer, which is located on the top surface of the composite substrate and electrically connected to each of the conductive pins. The anti-oxidation conductive layer is present on the cut surface of each conductive pin and on the side surface of the top conductive layer.

4. The encapsulation element with a side-wettable structure formed by the hole wall as described in claim 2, characterized in that, The conductive layer of the composite substrate includes a top conductive layer and a bottom conductive layer, which are located on the top and bottom surfaces of the composite substrate, respectively. Each conductive pin includes an internal pin, which is formed in the composite substrate and electrically connected to the top and bottom conductive layers. The cut surface of each conductive pin also includes the side surface of the internal pin. The anti-oxidation conductive layer is present on the side surface of the top redistribution layer, the metal on the side surface of each internal pin, the side surface of the top conductive layer, and the side surface of the bottom conductive layer.

5. The encapsulation element with a side-wettable structure formed by the hole wall as described in claim 4, characterized in that, Each internal pin includes the molding compound and a deposited metal, and the side of each internal pin exposes the molding compound and the deposited metal surrounding the molding compound.

6. The encapsulation element with a side-wettable structure formed by the hole wall as described in claim 1, characterized in that, Each edge welding surface is a plane extending from the edge of the insulating protective layer, and the conductive layer of the composite substrate includes a top conductive layer and a bottom conductive layer, which are located on the top and bottom surfaces of the composite substrate, respectively. Each conductive pin includes an internal pin, which is formed in the composite substrate and electrically connected to the top and bottom conductive layers. The cut surface of each conductive pin also includes the side surface of its corresponding internal pin. The anti-oxidation conductive layer is present on the cut surface of each conductive pin, the side surface of the top conductive layer, and the side surface of the bottom conductive layer.

7. The encapsulation element with a side-wettable structure formed by the hole wall as described in claim 1, characterized in that, The top redistribution layer includes a top seed layer and a top metal layer, which are stacked sequentially on the molding compound. Each conductive via is an edge conductive blind via formed by the top seed layer and the top metal layer. Each edge soldering surface includes the top surface of the top metal layer in the edge conductive blind via, and the top surface of the top metal layer in the edge conductive blind via is an arc-shaped concave surface.

8. The encapsulation element with a side-wettable structure formed by the hole wall as described in claim 1, characterized in that, The top redistribution layer includes a top seed layer and a top metal layer, which are stacked sequentially on the encapsulation layer. Each conductive via includes at least one edge conductive blind via and at least one conductive through via. The position of each edge conductive blind via corresponds to the position of each conductive through via. Each edge conductive blind via is formed by the top seed layer and the top metal layer. Each conductive through via is filled with the encapsulation layer. Each edge soldering surface includes the top surface of the top metal layer in each edge conductive blind via, and the top surface of the top metal layer in each edge conductive blind via is an arc-shaped concave surface.

9. The encapsulation element with a side-wettable structure formed by the hole wall as described in claim 1, characterized in that, Each of the conductive holes is a conductive via, and each conductive via is formed by a through hole located in the composite substrate and the molding layer.

10. The encapsulation element with a side-wettable structure formed by the hole wall as described in claim 1, characterized in that, Each of these edge welding surfaces is the top surface of a portion of a surface pad that has been cut and retained within the packaged element.

Images