Hydrofluoric acid-based etching solution, preparation method and application thereof

Abstract

The invention provides a hydrofluoric acid-based etching solution and a preparation method thereof, and belongs to the technical field of surface treatment, and the hydrofluoric acid-based etching solution comprises the following substances by mass: 5-15% of hydrofluoric acid; 20%-40% of nitric acid; 5%-15% of hydrogen peroxide; 0.01%-0.5% of a corrosion inhibitor; 0.01% to 0.1% of a surfactant; hydrofluoric acid is used as a main etching agent and can effectively dissolve an oxide and a damaged layer on the surface of a wafer; nitric acid and hydrogen peroxide are used as oxidants, so that the surface of the wafer can be oxidized to form an oxide layer which is more easily dissolved by hydrofluoric acid, and the etching efficiency is improved; the corrosion inhibitor can protect the substrate from being over-etched; and the surface active agent is beneficial to improving the wettability of the etching liquid on the surface of the wafer, so that the etching uniformity is ensured. Through the synergistic effect of hydrofluoric acid, nitric acid and hydrogen peroxide, burrs and protrusions on the surface of the wafer can be selectively removed, and a base material is not damaged; and the surface roughness of the treated wafer is obviously reduced, the atomic-scale flatness is achieved, and the manufacturing requirements of high-performance semiconductor devices are met.

Description

Technical Field

[0001] This application relates to the field of surface treatment technology, and in particular to a hydrofluoric acid-based etching solution, its preparation method, and its application. Background Technology

[0002] Gallium nitride (GaN), as a third-generation semiconductor material, has shown broad application prospects in high-temperature, high-frequency, and high-power electronic devices as well as optoelectronic devices. However, during the processing of GaN wafers, surface microburrs and protrusions are inevitably generated during the removal of the SiN passivation layer after deposition. These surface defects lead to electric field concentration, reducing the device breakdown voltage, increasing leakage current, and seriously affecting device reliability and performance.

[0003] Traditional gallium nitride (GaN) surface treatment methods mainly include mechanical polishing and dry etching. Mechanical polishing easily introduces new surface damage, while dry etching equipment is expensive and prone to causing other types of damage. Chemical wet etching has advantages such as low cost, simple operation, and suitability for mass production; however, due to the high chemical stability of gallium nitride, traditional single-acid solutions are difficult to achieve efficient and uniform surface treatment.

[0004] Hydrofluoric acid, a commonly used etchant, is primarily used in the semiconductor industry for etching silicon dioxide and silicon materials. However, its direct etching effect on gallium nitride (GaN) is limited, and it usually needs to be used in combination with other acid oxidants to achieve good surface treatment results. Existing hydrofluoric acid-based formulations are prone to problems such as poor selectivity, over-etching, or the formation of surface corrosion spots when treating GaN surfaces. Summary of the Invention

[0005] In view of this, it is necessary to provide a hydrofluoric acid-based etching solution, its preparation method and its application to address the shortcomings of existing technologies, aiming to solve problems such as residual silicon nitride on the surface, incomplete burr removal, damage to the substrate and low efficiency in existing technologies.

[0006] To solve the above problems, this application adopts the following technical solution: One objective of this application is to provide a hydrofluoric acid-based etching solution, comprising the following components by weight: Hydrofluoric acid: 5%~15%; Nitric acid: 20%~40%; Hydrogen peroxide: 5%–15%; Corrosion inhibitor: 0.01%–0.5%; Surfactant: 0.01%~0.1%; The remainder is deionized water.

[0007] The second objective of this application is to provide a method for preparing a hydrofluoric acid-based etching solution, comprising the following steps: The following substances by mass composition are mixed to obtain the product, wherein: Hydrofluoric acid: 5%~15%; Nitric acid: 20%~40%; Hydrogen peroxide: 5%–15%; Corrosion inhibitor: 0.01%–0.5%; Surfactant: 0.01%~0.1%; The remainder is deionized water.

[0008] The third objective of this application is to provide an application of the aforementioned hydrofluoric acid-based etching solution in treating wafer surfaces or in treating polished surfaces during chemical mechanical polishing.

[0009] In some embodiments, the hydrofluoric acid-based etching solution is used in the treatment of a wafer surface, the wafer comprising a gallium nitride wafer.

[0010] The fourth objective of this application is to provide a wafer surface treatment method, comprising the following steps: The wafer to be processed is immersed in a hydrofluoric acid-based etching solution and subjected to agitation treatment. The hydrofluoric acid-based etching solution comprises the following components by mass: hydrofluoric acid: 5%~15%; nitric acid: 20%~40%; hydrogen peroxide: 5%~15%; corrosion inhibitor: 0.01%~0.5%; surfactant: 0.01%~0.1%; and the balance is deionized water.

[0011] In some embodiments, during the oscillation process, the oscillation temperature is 25°C to 27.5°C, the oscillation time is 30 to 90 seconds, and the oscillation frequency is 30 to 60 Hz.

[0012] In some embodiments, prior to the oscillation process, the wafer to be processed is sequentially cleaned in N-methylpyrrolidone and isopropanol, and then cleaned in deionized water.

[0013] In some embodiments, the hydrofluoric acid mass component is 10%, the nitric acid mass component is 30%, the hydrogen peroxide concentration is 10%, the oscillation temperature is 25°C, the oscillation time is 60 seconds, and the oscillation frequency is 45Hz.

[0014] In some embodiments, the corrosion inhibitors include benzotriazole and its derivatives, alkynyl alcohols, and molybdates.

[0015] In some embodiments, the surfactants include fluorinated nonionic surfactants, acetylenic diol surfactants, and polyether-modified polysiloxanes.

[0016] The application adopts the above technical solution, and its beneficial effects are as follows: The hydrofluoric acid-based etching solution and its preparation method provided in this application comprise the following components by weight: hydrofluoric acid: 5%–15%; nitric acid: 20%–40%; hydrogen peroxide: 5%–15%; corrosion inhibitor: 0.01%–0.5%; surfactant: 0.01%–0.1%; with the balance being deionized water. Hydrofluoric acid, as the main etchant, can effectively dissolve oxides and damaged layers on the wafer surface. Nitric acid and hydrogen peroxide, as oxidants, can oxidize the wafer surface to form an oxide layer that is more easily dissolved by hydrofluoric acid, thereby improving etching efficiency. The corrosion inhibitor can protect the wafer substrate from over-etching. The surfactant helps improve the wettability of the etching solution on the wafer surface, ensuring etching uniformity. Through the synergistic effect of hydrofluoric acid, nitric acid, and hydrogen peroxide, burrs and protrusions on the wafer surface can be selectively removed without damaging the substrate material. The surface roughness of the treated wafer is significantly reduced, achieving atomic-level flatness, which meets the manufacturing requirements of high-performance semiconductor devices. The wet chemical etching process is simple to operate, with parameters that are easy to control, making it suitable for mass production and significantly reducing production costs. Compared to some strong acid formulations, the etching solution of this invention is easier to neutralize, reducing the burden of waste liquid treatment and environmental impact.

[0017] The hydrofluoric acid-based etching solution provided by this invention can effectively solve the problem of removing burrs and protrusions from wafer surfaces using wafer surface treatment processes. By optimizing the formulation and process parameters, high-efficiency, high-selectivity, and low-damage surface treatment effects are achieved. This technology can be used in the manufacturing process of gallium nitride-based electronic and optoelectronic devices, improving device performance and reliability, and has significant industrial application value. Attached Figure Description

[0018] To more clearly illustrate the technical solutions of the embodiments of this application, the drawings used in the description of the embodiments of this application or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0019] Figure 1 The surface morphology before and after treatment was observed using atomic force microscopy (AFM) in the embodiments of this application. Detailed Implementation

[0020] The embodiments of this application are described in detail below. Examples of these embodiments are shown in the accompanying drawings, wherein the same or similar reference numerals denote the same or similar elements or elements having the same or similar functions throughout. The embodiments described below with reference to the accompanying drawings are exemplary and intended to explain this application, and should not be construed as limiting this application. In the description of this application, it should be understood that the terms "upper", "lower", "horizontal", "inner", "outer", etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings, and are only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of this application. Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of this application, "multiple" means two or more, unless otherwise explicitly specified.

[0021] To make the objectives, technical solutions, and advantages of this application clearer, the following detailed description is provided in conjunction with the accompanying drawings and embodiments.

[0022] This invention provides a hydrofluoric acid-based etching solution, comprising the following components by weight: Hydrofluoric acid: 5%~15%; Nitric acid: 20%~40%; Hydrogen peroxide: 5%–15%; Corrosion inhibitor: 0.01%–0.5%; Surfactant: 0.01%~0.1%; The remainder is deionized water.

[0023] It is understandable that hydrofluoric acid is one of the few acids that can effectively dissolve certain very stable metal oxides (such as chromium oxide Cr2O3, which is the main component of stainless steel passivation films). It reacts slightly with the metal substrate, preventing the formation of a complete passivation film on the surface, thus ensuring the continuous etching process. Its concentration directly controls the etching rate and depth. The higher the concentration, the faster and deeper the etching. Nitric acid, as a strong oxidant and a source of H+,... +Nitric acid, a strong oxidizing acid, oxidizes metal surfaces, forming a thin, porous oxide film. This newly formed oxide film is then rapidly dissolved by hydrofluoric acid. This "oxidation-dissolution" cycle is crucial for continuous and uniform etching. The strong oxidizing properties of nitric acid contribute to a bright, white etched surface, rather than a dull, corroded one. Hydrogen peroxide acts as an auxiliary oxidant and environmentally friendly promoter. As another strong oxidant, hydrogen peroxide works synergistically with nitric acid to enhance the system's oxidation capacity, making the etching process faster and more uniform. During the etching reaction, nitric acid may be reduced to produce nitrogen oxides (NOx, a brownish-red toxic gas). The presence of hydrogen peroxide can re-oxidize these low-valence nitrogen oxides into nitric acid (or nitrates), greatly reducing the generation of toxic fumes, improving the working environment, and meeting the requirements of green production. It also helps maintain the metal ions generated during etching at a higher valence state, making them more likely to form precipitates or stable complexes. Corrosion inhibitors suppress over-corrosion and protect grain boundaries. In strong acid environments, etching can become uncontrollable, leading to over-corrosion of the substrate ("over-etching"), increased surface roughness, and even intergranular corrosion (corrosion occurring along metal grain boundaries, which severely weakens material strength). Corrosion inhibitors can selectively adsorb at the most active points on the metal surface (such as grain boundaries and defects), forming a protective film that inhibits acid attack, thereby... Ensuring a uniform downward etching process, rather than a bumpy, uneven one, widens the process window, makes operation easier to control, and results in more consistent product quality. Surfactants improve wettability and uniformity, reducing the surface tension of the etching solution and allowing it to spread quickly and evenly on the metal workpiece surface. This is especially beneficial for workpieces with complex shapes or fine structures, effectively preventing etching dead zones and spot corrosion caused by hydrogen bubbles, ensuring consistent etching across the entire surface, facilitating the removal of reaction products, maintaining surface cleanliness, and achieving a brighter surface. Deionized water (balance) primarily acts as a solvent and regulator, serving as a solvent for all other components to ensure uniform mixing. Using deionized water avoids the presence of chloride ions (Cl-) in the water. - ), calcium ions (Ca²) + ), magnesium ions (Mg²) + Impurities such as impurities can interfere with the etching reaction or contaminate the metal surface, ensuring the purity and repeatability of the etching process.

[0024] It is understandable that the dual oxidation effect of nitric acid and hydrogen peroxide, combined with the dissolving effect of hydrofluoric acid, results in high etching efficiency. The oxidizing environment, combined with surfactants, can produce a uniform, bright, spotless, and low-roughness etched surface. The addition of corrosion inhibitors effectively prevents over-corrosion and intergranular corrosion, making the etching depth and morphology easy to control and resulting in a high yield. The introduction of hydrogen peroxide significantly reduces the emission of toxic nitrogen oxide gases, improves the working environment, and lowers the cost of waste gas treatment. This formulation system is particularly suitable for metals such as stainless steel, titanium, and nickel-based alloys that easily form dense passivation films, and has broad application prospects in precision parts, electronic components, and decorative panels.

[0025] In this embodiment, the corrosion inhibitors include benzotriazole (BTA) and its derivatives, alkynyl alcohols (such as hexynyl diol) and molybdates.

[0026] In this embodiment, the surfactants include fluorinated nonionic surfactants, acetylenol surfactants (such as the Surfynol™ series), and polyether-modified polysiloxanes.

[0027] This invention provides a hydrofluoric acid-based etching solution using nitric acid and hydrogen peroxide as oxidants. This solution oxidizes the surface of a gallium nitride (GaN) wafer, forming an oxide layer that is more easily dissolved by hydrofluoric acid, thus improving etching efficiency. An etching inhibitor protects the wafer (GaN substrate) from over-etching. A surfactant helps improve the wettability of the etching solution on the GaN surface, ensuring etching uniformity. Through the synergistic effect of hydrofluoric acid, nitric acid, and hydrogen peroxide, burrs and protrusions on the wafer surface can be selectively removed without damaging the substrate material. The surface roughness of the treated wafer is significantly reduced, achieving atomic-level flatness, meeting the manufacturing requirements of high-performance semiconductor devices. The wet chemical etching process is simple to implement, with easily controllable parameters, suitable for mass production, and can significantly reduce production costs. Compared to some strong acid formulations, the etching solution of this invention is easier to neutralize, reducing the burden of waste disposal and environmental impact.

[0028] The hydrofluoric acid-based etching solution provided by this invention can effectively solve the problem of removing burrs and protrusions from wafer surfaces using wafer surface treatment processes. By optimizing the formulation and process parameters, high-efficiency, high-selectivity, and low-damage surface treatment effects are achieved. This technology can be used in the manufacturing process of gallium nitride-based electronic and optoelectronic devices, improving device performance and reliability, and has significant industrial application value.

[0029] The hydrofluoric acid-based etching solution provided in the above embodiments of the present invention can be used in the treatment of wafer surfaces or in the treatment of polished surfaces in chemical mechanical polishing.

[0030] Specifically, the wafer surface is treated before or independently of chemical mechanical polishing (CMP).

[0031] It is understandable that natural oxides, contaminants, and residues from previous processes that may be present on the wafer surface need to be removed before proceeding to chemical mechanical polishing (CMP) or other critical processes. Specifically, this includes: Surface pretreatment: Prepare an absolutely clean and activated surface before CMP, epitaxial growth, or thin film deposition. For example, before silicon epitaxial growth, the native oxide layer needs to be removed with an HF-based solution, which provides a more comprehensive cleaning and passivation effect.

[0032] Patterning etching: For devices such as gallium nitride, this solution can be used directly for micron- or nanometer-scale isotropic wet etching to form specific structures, such as mesas and grooves. This is performed before CMP to define the pattern.

[0033] Removal of sacrificial layer: In MEMS (Micro-Electro-Mechanical Systems) manufacturing, it can be used to selectively etch away the silicon dioxide sacrificial layer.

[0034] Specifically, after chemical mechanical polishing (CMP), the polished surface is treated (post-CMP cleaning).

[0035] It is understandable that the CMP process leaves some contaminants on the wafer surface, mainly including: polishing abrasive particles (such as silicon dioxide and cerium oxide particles); metallic contaminants (metal ions from the polishing pad or polishing slurry); organic residues (from additives in the polishing slurry); oxide layers and damaged layers (surface lattice damage caused by mechanical stress during polishing). This etching solution is mainly used for "post-CMP cleaning" in this stage, and its goal is not to perform large-scale pattern etching, but rather to achieve: Particle removal: By lightly etching the substrate (such as silicon dioxide or gallium nitride), particles attached to the surface are "suspended," making them easier to remove by subsequent megasonic or rinsing steps.

[0036] Surface passivation and cleaning: Remove the surface damage layer and metal contaminants generated during the CMP process to obtain an atomically clean, stoichiometric, and passivated surface.

[0037] Improving surface quality: Obtaining a uniform, defect-free surface lays a solid foundation for subsequent photolithography, thin film deposition and other process steps.

[0038] In this embodiment, the hydrofluoric acid-based etching solution is used in the treatment of a wafer surface, wherein the wafer comprises a gallium nitride wafer.

[0039] This application also provides a wafer surface treatment method, including the following steps: The wafer to be processed is immersed in a hydrofluoric acid-based etching solution and subjected to agitation treatment. The hydrofluoric acid-based etching solution comprises the following components by mass: hydrofluoric acid: 5%~15%; nitric acid: 20%~40%; hydrogen peroxide: 5%~15%; corrosion inhibitor: 0.01%~0.5%; surfactant: 0.01%~0.1%; and the balance is deionized water.

[0040] In this embodiment, during the oscillation process, the oscillation temperature is 25°C to 27.5°C, the oscillation time is 30 to 90 seconds, and the oscillation frequency is 30 to 60 Hz.

[0041] In this embodiment, before performing the oscillation process, the wafer to be processed is further cleaned sequentially in N-methylpyrrolidone and isopropanol, and then cleaned in deionized water.

[0042] In this embodiment, the hydrofluoric acid mass component is 10%, the nitric acid mass component is 30%, the hydrogen peroxide concentration is 10%, the oscillation temperature is 25°C, the oscillation time is 60 seconds, and the oscillation frequency is 45Hz.

[0043] The specific process parameters are as follows:

[0044] The wafer surface treatment method provided in this application involves immersing the wafer to be treated in a hydrofluoric acid-based etching solution and performing agitation treatment. The hydrofluoric acid-based etching solution comprises the following components by mass: hydrofluoric acid: 5%~15%; nitric acid: 20%~40%; hydrogen peroxide: 5%~15%; corrosion inhibitor: 0.01%~0.5%; surfactant: 0.01%~0.1%; with the balance being deionized water. Hydrofluoric acid, as the main etchant, can effectively dissolve oxides and damaged layers on the wafer surface. Nitric acid and hydrogen peroxide, as oxidants, can oxidize the wafer surface to form an oxide layer that is more easily dissolved by hydrofluoric acid, thereby improving etching efficiency. The corrosion inhibitor can protect the wafer substrate from over-etching. The surfactant helps improve the wettability of the etching solution on the wafer surface, ensuring etching uniformity. Through the synergistic effect of hydrofluoric acid, nitric acid, and hydrogen peroxide, burrs and protrusions on the wafer surface can be selectively removed without damaging the substrate material. The surface roughness of the treated wafer is significantly reduced, achieving atomic-level flatness, which meets the manufacturing requirements of high-performance semiconductor devices. The wet chemical etching process is simple to operate, with parameters that are easy to control, making it suitable for mass production and significantly reducing production costs. Compared to some strong acid formulations, the etching solution of this invention is easier to neutralize, reducing the burden of waste liquid treatment and environmental impact.

[0045] The hydrofluoric acid-based etching solution provided by this invention can effectively solve the problem of removing burrs and protrusions from wafer surfaces using wafer surface treatment processes. By optimizing the formulation and process parameters, high-efficiency, high-selectivity, and low-damage surface treatment effects are achieved. This technology can be used in the manufacturing process of gallium nitride-based electronic and optoelectronic devices, improving device performance and reliability, and has significant industrial application value.

[0046] The technical solutions described above in this application will be explained in detail below with reference to specific embodiments.

[0047] Example Prepare a 4-inch gallium nitride wafer. After dry etching and removal of the SiN passivation layer, the surface still has microburrs and protrusions with a height of 0.2-0.5 μm. Process it according to the following steps: Preparation of etching solution: Take 10% hydrofluoric acid (electronic grade G3), 30% nitric acid (electronic grade G4), 10% hydrogen peroxide (electronic grade G4), 0.05% benzotriazole (etchant), 0.05% polyethylene glycol octylphenyl ether (surfactant), and the balance is deionized water. All operations are performed in a cleanroom environment.

[0048] Pretreatment: The wafer is subjected to NMP high-pressure cleaning + IPA removal + deionized water cleaning, and then dried with nitrogen.

[0049] Etching process: Immerse the wafer in the prepared etching solution, maintain the temperature at 25°C, and process for 60 seconds, while simultaneously using an ultrasonic oscillation frequency of 45Hz.

[0050] Post-processing: The wafer is immersed in deionized water for 14 minutes, then rinsed in a 5% sodium hydroxide solution (to neutralize residual acid), and finally rinsed with deionized water and dried with nitrogen.

[0051] The surface morphology before and after treatment was observed using atomic force microscopy (AFM). The surface roughness Ra decreased from 1.2 nm before treatment to 0.4 nm. Burrs and protrusions were almost completely removed, resulting in a smooth and uniform surface with obvious step flow. Please refer to [link / reference]. Figure 1 .

[0052] The DOE (Design of Experiments) process confirms the optimal process conditions through verification experiments:

[0053] In addition to being used for the treatment of burrs and protrusions in the passivation layer of semiconductor wafers, this invention can also be used for the treatment of burrs and protrusions generated by chemical mechanical polishing.

[0054] Furthermore, compared with other removal methods, the experimental results of this invention are optimal:

[0055] Therefore, the hydrofluoric acid-based etching solution and corresponding surface treatment process for wafer materials provided by this invention effectively solve the problem of removing burrs and protrusions from gallium nitride wafer surfaces. By optimizing the formulation and process parameters, high-efficiency, high-selectivity, and low-damage surface treatment effects are achieved. This technology can be used in the manufacturing process of gallium nitride-based electronic and optoelectronic devices, improving device performance and reliability, and has significant industrial application value.

[0056] It is understood that the technical features of the above embodiments can be combined in any way. For the sake of brevity, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0057] The above are merely preferred embodiments of this application, and only specifically describe the technical principles of this application. These descriptions are only for explaining the principles of this application and should not be construed as limiting the scope of protection of this application in any way. Based on this explanation, any modifications, equivalent substitutions, and improvements made within the spirit and principles of this application, as well as other specific embodiments of this application that can be conceived by those skilled in the art without creative effort, should be included within the scope of protection of this application.

Claims

1. A hydrofluoric acid based etching solution characterized in that, Substances comprising the following mass components: Hydrofluoric acid: 5%~15%; Nitric acid: 20%~40%; Hydrogen peroxide: 5%–15%; Corrosion inhibitor: 0.01%–0.5%; Surfactant: 0.01%~0.1%; The remainder is deionized water.

2. A method of preparing a hydrofluoric acid-based etching solution, characterized by, Includes the following steps: The following substances by mass composition are mixed to obtain the product, wherein: Hydrofluoric acid: 5%~15%; Nitric acid: 20%~40%; Hydrogen peroxide: 5%–15%; Corrosion inhibitor: 0.01%–0.5%; Surfactant: 0.01%~0.1%; The remainder is deionized water.

3. The use of a hydrofluoric acid-based etching solution as described in claim 1 or 2 in treating wafer surfaces or in treating polished surfaces in chemical mechanical polishing.

4. Use of the hydrofluoric acid-based etching solution according to claim 3 in the treatment of a wafer surface, characterized in that, The wafer includes gallium nitride wafers.

5. A wafer surface processing method characterized by, Includes the following steps: The wafer to be processed is immersed in a hydrofluoric acid-based etching solution and subjected to agitation treatment. The hydrofluoric acid-based etching solution comprises the following components by mass: hydrofluoric acid: 5%~15%; nitric acid: 20%~40%; hydrogen peroxide: 5%~15%; corrosion inhibitor: 0.01%~0.5%; surfactant: 0.01%~0.1%; and the balance is deionized water.

6. The wafer surface treatment method according to Claim 5, wherein In the oscillation process, the oscillation temperature is 25℃~27.5℃, the oscillation time is 30 seconds~90 seconds, and the oscillation frequency is 30~60Hz.

7. The wafer surface treatment method according to Claim 5, wherein Before performing the oscillation process, the wafer to be processed is sequentially cleaned in N-methylpyrrolidone and isopropanol, and then cleaned in deionized water.

8. The wafer surface treatment method according to Claim 6, wherein The hydrofluoric acid has a mass component of 10%, the nitric acid has a mass component of 30%, the hydrogen peroxide has a concentration of 10%, the oscillation temperature is 25°C, the oscillation time is 60 seconds, and the oscillation frequency is 45Hz.

9. The wafer surface treatment method according to Claim 5, wherein The corrosion inhibitors include benzotriazole and its derivatives, alkynyl alcohols, and molybdates.

10. The wafer surface treatment method of claim 5, wherein The surfactants include fluorinated nonionic surfactants, acetylenic diol surfactants, and polyether-modified polysiloxanes.

Images