Device and method for measuring modified area of substrate

Abstract

An apparatus and method for measuring a modified region of a substrate having a first image capturing device facing forward a first surface of the substrate and configured to capture a first image, a second image capturing device facing forward a second surface of the substrate and configured to capture a second image, a third image capturing device facing forward a third surface of the substrate and configured to capture a third image, and a microcontroller unit. The third image capturing device is arranged on the substrate and is used for shooting the substrate to obtain a second image, the first surface of the substrate is opposite to the second surface of the substrate, and the third image capturing device obliquely faces the first surface of the substrate or the second surface of the substrate and is used for shooting the substrate to obtain a third image. The microcontroller acquires modified area measurement information of at least one modified area of the substrate according to the first image, the second image and the third image.

Description

Technical Field

[0001] A measurement apparatus and method for a substrate, and more particularly a substrate modification region measurement apparatus and method capable of measuring a modified region of a substrate. Background Technology

[0002] Through Glass Via (TGV) substrates are glass substrates with multiple perforations. They can be used as intermediary boards in the packaging of 3D or 2.5D chips. Especially for integrated circuits operating at high frequencies and speeds, they have a higher dielectric constant and better anti-interference ability. Therefore, the use of through glass via substrates as intermediary boards in the packaging of 3D or 2.5D chips has become an inevitable trend.

[0003] The process of forming a glass perforated substrate typically involves first modifying the glass substrate to create multiple modified regions at specific locations. Then, the substrate with these modified regions is immersed in an etching bath to etch the modified regions, forming the glass perforations. Currently, a common modification method is laser modification, which uses a laser light source to irradiate specific locations on the glass substrate, creating modified regions. Current metrology equipment primarily measures the formed glass perforations and does not measure the modified regions of the glass substrate after modification and before etching. Summary of the Invention

[0004] The purpose of this invention is to provide a substrate modification area measurement device and method. If the modification area of ​​the substrate is not fully modified and / or has defects, the subsequently formed vias will not meet expectations. Therefore, before etching, the substrate modification area measurement device and method of this invention measures the modification area of ​​the substrate. If any modification area is not fully modified and / or has defects, further modification or other treatments can be performed to ensure that the subsequently formed vias meet expectations, thereby further improving the yield of the viad substrate.

[0005] This invention is implemented as follows: a substrate modification region measurement device, comprising: A first image-capturing device is disposed on a first surface of a substrate, facing the first surface of the substrate, and is used to capture images of the substrate to obtain a first image; A second imaging device is disposed below the second surface of the substrate and faces the second surface of the substrate, for capturing images of the substrate to obtain a second image, wherein the first surface of the substrate is relative to the second surface of the substrate. The microcontroller unit is signal-connected to the first image acquisition device and the second image acquisition device, and is used to acquire modification area measurement information of at least one modification area of ​​the substrate based on the first image and the second image. A first collimated light source, signal-connected to the microcontroller unit, is disposed below the second surface of the substrate, facing the second surface of the substrate, and is used to provide a first collimated beam that illuminates the substrate and travels toward the first imaging device; and The second collimated light source, signal-connected to the microcontroller unit, is disposed on the first surface of the substrate, facing the first surface of the substrate, and is used to provide a second collimated beam that illuminates the substrate and travels toward the second imaging device.

[0006] A further technical solution of the present invention is: a third imaging device, disposed on the first surface of the substrate, disposed on one side of the first imaging device and obliquely facing the first surface of the substrate, or disposed below the second surface of the substrate, disposed on one side of the second imaging device and obliquely facing the second surface of the substrate; and The third collimated light source, signal-connected to the microcontroller unit, is disposed below the second surface or above the first surface of the substrate, and obliquely faces the second surface or the first surface of the substrate, for providing a third collimated beam that illuminates the substrate and travels toward the third imaging device; The third imaging device is used to capture images of the substrate to obtain a third image; The microcontroller unit is further connected to the first imaging device and is used to obtain the measurement information of the modified region of the substrate based on the first image, the second image and the third image.

[0007] A further technical solution of the present invention is: wherein the modified area measurement information of the modified area includes a first position of the modified area on the first surface of the substrate, a second position of the modified area on the second surface of the substrate, and modification information of the modified area, wherein the modification information of the modified area is used to indicate whether the modified area has completed modification and / or whether there are defects.

[0008] A further technical solution of the present invention is: wherein the microcontroller unit obtains the first position of the modified region on the first surface of the substrate according to the first image, the microcontroller unit obtains the second position of the modified region on the second surface of the substrate according to the second image, and the microcontroller unit obtains the modification information of the modified region according to the third image, the first position of the modified region on the first surface of the substrate, and the second position of the modified region on the second surface of the substrate.

[0009] A further technical solution of the present invention is: two polarizers, wherein the two polarization directions of the two polarizers are orthogonal to each other, one of the two polarizers is disposed between the first imaging device and the first surface of the substrate, and between the second collimating light source and the first surface of the substrate, and the other of the two polarizers is disposed between the second imaging device and the second surface of the substrate, and between the first collimating light source and the second surface of the substrate.

[0010] A further technical solution of the present invention is: two polarizers, wherein the two polarization directions of the two polarizers are orthogonal to each other, one of the two polarizers is disposed between the first imaging device and the first surface of the substrate, and between the second collimating light source and the first surface of the substrate; and the other of the two polarizers is disposed between the second imaging device and the second surface of the substrate, and between the first collimating light source and the second surface of the substrate; and The other two polarizers, wherein the two polarization directions of the other two polarizers are orthogonal to each other, one of the other two polarizers is disposed between the third imaging device and the first surface or the second surface of the substrate, and the other of the two polarizers is disposed between the third collimating light source and the second surface or the first surface of the substrate.

[0011] A further technical solution of the present invention is that the first wavelength range of the first collimated beam is different from or the same as the second wavelength range of the second collimated beam, and the second wavelength range of the second collimated beam is different from or the same as the third wavelength range of the third collimated beam.

[0012] A further technical solution of the present invention is that the modified region of the substrate is a laser modified region formed after the substrate is irradiated by a laser light source, and the substrate is a glass substrate.

[0013] A further technical solution of the present invention is that any one of the first image capturing device, the second image capturing device, and the third image capturing device is a color depth-of-field camera or a monochrome depth-of-field camera.

[0014] A further technical solution of the present invention is that the light beam color of any one of the first collimated beam, the second collimated beam, and the third collimated beam is white, red, green, or blue.

[0015] A further technical solution of the present invention is: wherein the first imaging device and the second collimating light source are integrated into a first telecentric imaging module, and the second imaging device and the first collimating light source are integrated into a second telecentric imaging module.

[0016] A further technical solution of the present invention is: wherein the third imaging device is disposed on the first surface of the substrate, the third collimating light source is disposed below the second surface of the substrate, and the substrate modification area measuring device further comprises: A fourth image-capturing device, signal-connected to the microcontroller unit, is disposed below the second surface of the substrate and on one side of the second image-capturing device, obliquely facing the second surface of the substrate, for capturing images of the substrate to obtain a fourth image; and The fourth collimated light source is signal-connected to the microcontroller unit, disposed on the first surface of the substrate, and obliquely facing the first surface of the substrate, for providing a fourth collimated beam that illuminates the substrate and travels toward the fourth imaging device; The microcontroller unit obtains measurement information of at least one modified region of the substrate based on the first image, the second image, the third image, and the fourth image.

[0017] A further technical solution of the present invention is: wherein the fourth collimating light source and the third imaging device are integrated into a third telecentric imaging module, and the third collimating light source and the fourth imaging device are integrated into a fourth telecentric imaging module.

[0018] Another object of the present invention is to provide a method for measuring the modified region of a substrate, comprising: A first collimated beam is provided to irradiate the second surface of a substrate and travel toward a first imaging device, and the first imaging device is used to capture the substrate to obtain a first image, wherein the second surface of the substrate is relative to the first surface of the substrate, and the first imaging device is disposed on the first surface of the substrate. A second collimated beam is provided to positively illuminate the first surface of the substrate and travel toward the second imaging device, and the second imaging device is used to capture the substrate to obtain a second image, wherein the second imaging device is disposed below the second surface of the substrate; A third collimated beam is provided, obliquely illuminating the second surface or the first surface of the substrate and traveling toward a third imaging device, thereby enabling the third imaging device to capture an image of the substrate to obtain a third image. The third imaging device is disposed above the first surface of the substrate, located to one side of the first imaging device, and obliquely facing the first surface of the substrate; or, the third imaging device is disposed below the second surface of the substrate, located to one side of the second imaging device, and obliquely facing the second surface of the substrate. Using a microcontroller unit, measurement information of at least one modified region of the substrate is obtained based on the first image, the second image, and the third image.

[0019] A further technical solution of the present invention includes: A first collimated beam is provided to illuminate the second surface of a substrate and travel toward a first imaging device, and the first imaging device is used to capture the substrate to obtain a first image, wherein the second surface of the substrate is relative to the first surface of the substrate, the first imaging device is disposed on the first surface of the substrate, a polarizer is disposed between the first surface of the substrate and the first imaging device, and another polarizer is disposed between the second surface of the substrate and a first collimated light source for emitting the first collimated beam, and its polarization direction is orthogonal to the polarization direction of the polarizer. A second collimated light beam is provided to positively illuminate the first surface of the substrate and travel toward a second imaging device, causing the second imaging device to capture an image of the substrate to obtain a second image. The second imaging device is disposed below the second surface of the substrate. Another polarizer is disposed between the second surface of the substrate and the second imaging device, and the polarizer is disposed between the first surface of the substrate and a second collimated light source for emitting the first collimated light beam. Using a microcontroller unit, measurement information of at least one modified region of the substrate is obtained based on the first image and the second image.

[0020] The beneficial effects of the present invention are: the present invention provides a substrate modification area measurement device and method, which can measure the substrate modification area to increase the yield of the formed perforated substrate. Attached Figure Description

[0021] Figure 1This is a schematic diagram of the substrate modification region measurement device according to the first embodiment of the present invention.

[0022] Figure 2 This is a schematic diagram of the substrate modification region measurement device according to the second embodiment of the present invention.

[0023] Figure 3 This is a schematic diagram of the substrate modification region measurement device according to the third embodiment of the present invention.

[0024] Figure 4 This is a schematic diagram of the substrate modification region measurement method according to an embodiment of the present invention.

[0025] Figure 5 This is a schematic diagram of the first image acquired by the substrate modification region measurement device according to the first embodiment of the present invention.

[0026] Figure 6 This is a schematic diagram of the second image acquired by the substrate modification region measurement device according to the first embodiment of the present invention.

[0027] Figure 7 This is a schematic diagram of the third image acquired by the substrate modification region measurement device according to the first embodiment of the present invention.

[0028] Figure 8 This is a schematic diagram of the substrate modification region measurement device according to the fourth embodiment of the present invention.

[0029] Figure 9 This is a schematic diagram of the first image acquired by the substrate modification region measurement device according to the fourth embodiment of the present invention.

[0030] Figure 10 This is a schematic diagram of the second image acquired by the substrate modification region measurement device according to the fourth embodiment of the present invention.

[0031] Figure 11 This is a schematic diagram of the substrate modification region measurement device according to the fifth embodiment of the present invention.

[0032] Figure 12 This is a schematic diagram of the third image acquired by the substrate modification region measurement device according to the fifth embodiment of the present invention.

[0033] Reference numerals: 101-First imaging device, 102-Second imaging device, 103-Third imaging device, 104-Microcontroller unit, 105-Fourth imaging device, 110-Substrate, 111, 111a, 111b-Modified regions, 121-First collimated light source, 122-Second collimated light source, 123-Third collimated light source, 124-Fourth collimated light source, 21-First telecentric imaging module, 22-Second telecentric imaging module, 23-Third telecentric imaging module, 24-Fourth telecentric imaging module, 31-34-Polarizers, 41, 42-Dirty defects, IMG1-First image, IMG2-Second image, IMG3-Third image, L1-First collimated beam, L2-Second collimated beam, L3-Third collimated beam, L4-Fourth collimated beam. Detailed Implementation

[0034] To make the objectives, technical solutions, and advantages of this invention clearer, the invention will be further described in detail below with reference to the accompanying drawings and embodiments. It should be noted that the terms "front," "rear," "left," "right," "upper," and "lower" used in the following description refer to directions in the accompanying drawings, and the terms "bottom surface," "top surface," "inner," and "outer" refer to directions toward or away from the geometric center of a specific component, respectively.

[0035] Please refer to Figure 1 , Figure 1 This is a schematic diagram of a substrate modification region measuring device according to a first embodiment of the present invention. The substrate modification region measuring device is used to measure the modification region 111 of the substrate 110, and thereby obtain modification region measurement information of the modification region 111. The substrate 110 is, for example, a glass substrate, and the modification region 111 of the substrate 110 is a laser modification region formed after irradiation by a laser light source, but the present invention is not limited to the type of substrate 110 and the formation method of the modification region 111.

[0036] The substrate modification area measurement device includes a first imaging device 101, a second imaging device 102, a third imaging device 103, and a microcontroller unit 104. The first imaging device 101 is disposed on the first surface of the substrate 110 (i.e., on the upper surface of the substrate 110), facing directly towards the first surface of the substrate 110 (i.e., the extension direction of the central optical axis of the first imaging device 101 is perpendicular to the first surface of the substrate 110), and is used to photograph the substrate 110 to obtain a first image. The second imaging device 102 is disposed below the second surface of the substrate 110 (i.e., below the lower surface of the substrate 110), facing directly towards the second surface of the substrate, and is used to photograph the substrate 110 to obtain a second image, wherein the first surface of the substrate 110 is relative to the second surface of the substrate 110.

[0037] The third imaging device 103 is disposed on the first surface of the substrate 110 and on one side of the first imaging device 101 (for example, located to the right of the first imaging device 101, but in other embodiments, it may also be located to the left of the first imaging device 101), and obliquely faces the first surface of the substrate 110. The third imaging device 103 is used to photograph the substrate 110 to obtain a third image. The microcontroller unit 104 is connected to the first imaging device 101, the second imaging device 102, and the third imaging device 103 via wired or wireless means, and obtains the modification region measurement information of at least one modification region 111 of the substrate 110 based on the first image, the second image, and the third image.

[0038] Furthermore, the measurement information of the modified region 111 includes a first position of the modified region 111 on the first surface of the substrate 110, a second position of the modified region 111 on the second surface of the substrate 110, and modification information of the modified region 111. The modification information of the modified region 111 indicates whether the modified region 111 has been modified and / or whether defects exist (e.g., but not limited to impurities or dirt). The measurement information of the modified region 111 is not limited to the above; it may also include the dimensional information (major axis length and minor axis length) and roundness of the modified region 111 on the first and second surfaces of the substrate 110.

[0039] The modified area measurement information can be used to determine whether the substrate 110 can be etched to avoid low yield of the subsequently formed perforated substrate (e.g., but not limited to glass perforated substrate (TGV substrate)). If the modified area measurement information indicates that the substrate 110 can meet the expected acceptable requirements of the modified area through further modified or other treatments, then the substrate 110 can be further modified or treated, thereby improving the yield of the subsequently formed perforated substrate.

[0040] In this embodiment, the substrate modification area measurement device further includes a first collimated light source 121, a second collimated light source 122, and a third collimated light source 123. The first collimated light source 121 is connected to the microcontroller unit 104 via wired or wireless means, is disposed below the second surface of the substrate 110, faces the second surface of the substrate 110, and provides a first collimated beam L1 that illuminates the substrate 110 and travels toward the first imaging device 101. The second collimated light source 122 is connected to the microcontroller unit 104 via wired or wireless means, is disposed above the first surface of the substrate 110, faces the first surface of the substrate 110, and provides a second collimated beam L2 that illuminates the substrate 110 and travels toward the second imaging device 102. The third collimated light source 123 is connected to the microcontroller unit 104 via wired or wireless means, is disposed below the second surface of the substrate 110, faces the second surface of the substrate 110 at an angle, and provides a third collimated beam L3 that illuminates the substrate 110 and travels toward the third imaging device 103.

[0041] Optionally, the first imaging device 101 and the second collimating light source 122 can be integrated into a first telecentric imaging module 21, and the second imaging device 102 and the first collimating light source 121 can be integrated into a second telecentric imaging module 22, but the present invention is not limited thereto. Furthermore, the first wavelength range of the first collimated beam L1 can be designed to be different from or the same as the second wavelength range of the second collimated beam L2, and the second wavelength range of the second collimated beam L2 can be different from or the same as the third wavelength range of the third collimated beam L3. For example, the beam color of any of the first collimated beam L1, the second collimated beam L2, and the third collimated beam L3 can be white, red, green, or blue. Moreover, any of the first imaging device 101, the second imaging device 102, and the third imaging device 103 can be a color camera or a monochrome camera, and preferably a color depth-of-field camera or a monochrome depth-of-field camera. In addition, each of the first collimated beam L1, the second collimated beam L2, and the third collimated beam L3 in other embodiments may also be implemented using a non-collimated beam. That is, the second collimated light source 122 and the third collimated light source 123 may be implemented using a non-collimated light source.

[0042] Please refer to Figure 1 and Figures 5 to 7 , Figure 5 This is a schematic diagram of the first image acquired by the substrate modification region measurement device according to the first embodiment of the present invention. Figure 6 This is a schematic diagram of the second image acquired by the substrate modification region measurement device according to the first embodiment of the present invention, and Figure 7 This is a schematic diagram of a third image acquired by the substrate modification region measurement device according to an embodiment of the present invention. Figure 5As shown, the first image IMG1 will display the distribution of multiple modified regions 111, 111a, and 111b on the first surface of the substrate 110. The microcontroller unit 104 can obtain the first position of the modified regions 111, 111a, and 111b on the first surface of the substrate 110 based on the first image IMG1. Figure 6 As shown, the second image IMG2 will show the distribution of multiple modified regions 111, 111a, and 111b on the second surface of the substrate 110. The microcontroller unit 104 can obtain the second position of the modified regions 111, 111a, and 111b on the second surface of the substrate 110 based on the second image IMG2.

[0043] like Figure 7 As shown, the third image IMG3 will display the modification status of multiple modified regions 111, 111a, and 111b of the substrate 110 between the first and second surfaces of the substrate 110. Furthermore, after modification, the refractive index, reflection index, and transmittance of the modified regions 111, 111a, and 111b will change. Compared with the unmodified areas, light will be scattered in the modified regions 111, 111a, and 111b. That is, the brightness of the multiple modified regions 111, 111a, and 111b in the third image IMG3 will be lower than the brightness of the unmodified areas. The modification status of the multiple modified regions 111, 111a, and 111b between the first and second surfaces of the substrate 110 can be determined through artificial intelligence algorithms or other algorithms. Accordingly, the microcontroller unit 104 can obtain the modification information of the modification regions 111, 111a, and 111b based on the third image IMG3, the first position of the modification regions 111, 111a, and 111b on the first surface of the substrate 110, and the second position of the modification region 111 on the second surface of the substrate 110.

[0044] For example, in this embodiment, if the modified region measurement information indicates that the modified regions 111a and 111b are offset between the first position on the first surface of the substrate 110 and the second position on the second surface of the substrate 110, and the substrate 111a and 111b cannot be made to meet the expected requirements (i.e., reduce the offset) through further modified processing or other processing, then the substrate 110 can be considered a defective product. If the substrate 110 can be made to meet the expected requirements through further modified processing or other processing, then the substrate 110 is further subjected to further modified processing or other processing.

[0045] For example, in this embodiment, the measurement information of the modified region indicates that the modification degree of the modified region 111a is insufficient, that is, the modification is not completed. The substrate 110 can be made to meet the expected requirements through further modification or other processes (that is, to increase the modification degree of the modified region 111a to complete the modification of the modified region 111a). In this way, the yield of the perforated substrate formed after the subsequent etching process of the substrate 110 can be effectively improved.

[0046] It should be noted that, although the embodiment of the substrate modification area measurement device described above is illustrated with a third imaging device 103 and a third collimating light source 123 as an example, the present invention is not limited thereto. In one embodiment, the third imaging device 103 and the third collimating light source 123 may be removed from the substrate modification area measurement device, that is, the substrate modification area measurement device may not include the third imaging device 103 and the third collimating light source 123, and the microcontroller unit 104 obtains modification area measurement information of at least one modification area 111 of the substrate 110 based on the first image and the second image. For example, the size of the modification area 111 in the first image and the second image is used to determine whether the modification area 111 has been completed and / or whether there are defects.

[0047] Please refer to Figure 2 , Figure 2 This is a schematic diagram of the substrate modification region measurement device according to the second embodiment of the present invention. Different from... Figure 1 In this embodiment, the third imaging device 103 is disposed on the second surface of the substrate 110 and on one side of the second imaging device 102 (for example, on the left side of the second imaging device 102, but in other embodiments it may be on the right side of the second imaging device 102), and obliquely faces the second surface of the substrate 110; and the third collimating light source 123 is disposed on the first surface of the substrate 110, and obliquely faces the first surface of the substrate 110.

[0048] Please refer to Figure 3 , Figure 3 This is a schematic diagram of the substrate modification region measurement device according to the third embodiment of the present invention. Compared to Figure 1In this embodiment, the substrate modification area measurement device further includes a fourth imaging device 105 and a fourth collimating light source 124. The fourth imaging device 105 is wired or wirelessly connected to the microcontroller unit 104, disposed below the second surface of the substrate 110 and on one side of the second imaging device 102, obliquely facing the second surface of the substrate 110, and is used to image the substrate 110 to obtain a fourth image. The fourth collimating light source 124 is wired or wirelessly connected to the microcontroller unit 104, disposed above the first surface of the substrate 110, obliquely facing the first surface of the substrate 110, and is used to provide a fourth collimated light beam L4 that illuminates the substrate 110 and travels toward the fourth imaging device 105.

[0049] In this embodiment, the microcontroller unit 104 acquires measurement information of at least one modified region 111 of the substrate 110 based on the first image, the second image, the third image IMG3, and the fourth image. The fourth image is similar to a mirror image of the third image, thus increasing the accuracy of the modified region measurement information. Furthermore, in this embodiment, the fourth collimating light source 124 and the third imaging device 103 can be integrated into a third telecentric imaging module 23, and the third collimating light source 123 and the fourth imaging device 105 can be integrated into a fourth telecentric imaging module 24; however, this invention is not limited thereto.

[0050] Please refer to Figure 1 and Figure 4 Or, please refer to Figure 2 and Figure 4 , Figure 4 This is a schematic diagram of a substrate modification region measurement method according to an embodiment of the present invention. First, in step S801, a first collimated light source 121 provides a first collimated beam L1 that positively illuminates the second surface of the substrate 110 and travels toward the first imaging device 101, and the first imaging device 101 captures an image of the substrate 110 to obtain a first image, wherein the second surface of the substrate 110 is relative to the first surface of the substrate 110, and the first imaging device 101 is disposed on the first surface of the substrate 110. Next, in step S802, a second collimated light source 122 provides a second collimated beam L2 that positively illuminates the first surface of the substrate 110 and travels toward the second imaging device 102, and the second imaging device 102 captures an image of the substrate 110 to obtain a second image, wherein the second imaging device 102 is disposed below the second surface of the substrate 110.

[0051] Subsequently, in step S803, the second collimated light source 122 is used to obliquely illuminate the second surface of the substrate 110. Figure 1 (in the embodiments) or the first surface ( Figure 2(In the embodiment) and a third collimated beam travels toward the third imaging device 103, and the third imaging device 103 captures the substrate 110 to obtain a third image, wherein the third imaging device 103 is disposed on the first surface of the substrate 110, located on one side of the first imaging device 101, and obliquely facing the first surface of the substrate 110 ( Figure 1 (In one embodiment), or, the third imaging device 103 is disposed below the second surface of the substrate 110, located on one side of the second imaging device 102, and obliquely facing the first surface of the substrate 110. Figure 2 (Example). Then, in step S804, the microcontroller unit 104 is used to obtain the modification region measurement information of at least one modification region 111 of the substrate 110 based on the first image, the second image and the third image.

[0052] In addition, as described in the previous section on substrate modification area measurement device, the third imaging device 103 and the third collimating light source 123 may not be used. Therefore, in another embodiment, the above-mentioned substrate modification area measurement method may not include step S803. Then, in step S804, the microcontroller unit 104 is used to obtain modification area measurement information of at least one modification area 111 of the substrate 110 based on the first image and the second image.

[0053] Please refer to the following: Figure 8 , Figure 8 This is a schematic diagram of the substrate modification region measurement device according to the fourth embodiment of the present invention. Different from... Figure 1 Implementation examples, Figure 8 The substrate modification area measurement device does not include the third imaging device 103 and the third collimating light source 123, but additionally includes polarizers 31 and 32. Polarizer 31 is disposed between the first imaging device 101 and the substrate 110, and between the second collimating light source 122 and the substrate 110. Polarizer 32 is disposed between the second imaging device 102 and the substrate 110, and between the second imaging device 102 and the substrate 110. Polarizers 31 and 32 are used to achieve a polarization filtering effect, allowing light with a specific polarization direction to enter and exit, wherein the polarization directions of polarizers 31 and 32 are orthogonal to each other.

[0054] In this embodiment, the polarization directions of polarizers 31 and 32 can be, for example, horizontal and vertical, respectively. The polarization direction of the first collimated beam L1 is vertical, and the polarization direction of the second collimated beam L2 is, for example, horizontal. Because the modified region 111 is modified, the polarization direction of the passing beam is changed. Through the arrangement of polarizer 31, the first imaging device 101 can only image beams in the horizontal direction, while through the arrangement of polarizer 32, the second imaging device 102 can only image beams in the vertical direction. After the substrate 110 is modified, the lattice arrangement direction will change, therefore the modified region 111 will change the polarization direction of the beam. After the first collimated beam L1 passes through the modification region 111, its polarization direction changes (the vertical direction becomes the oblique direction). The horizontal component of the beam passing through the modification region 111 can be imaged in the first imaging device 101. Similarly, after the second collimated beam L2 passes through the modification region 111, its polarization direction changes (the horizontal direction becomes the oblique direction). The vertical component of the beam passing through the modification region 111 can be imaged in the second imaging device 102.

[0055] Please refer to Figure 8 , Figure 9 , Figure 9 This is a schematic diagram of the first image acquired by the substrate modification region measurement device according to the fourth embodiment of the present invention. Figure 9 In the first image IMG1, according to the above explanation, except for the modified region 111, the portion of the first collimated beam L1 that passes through the substrate 110 cannot be imaged in the first imaging device 101 and is therefore black. However, the portion of the first collimated beam L1 that passes through the modified region 111 of the substrate 110 can be imaged in the first imaging device 101 because its polarization direction changes. Furthermore, the greater the degree of modification in the modified region 111, the larger the light spot imaged in the modified region 111 of the first image IMG1 will be. For example, in… Figure 9 In the first image IMG1, the degree of modification of modified region 111a is greater than that of other modified regions 111, while the degree of modification of modified region 111b is less than that of other modified regions 111. Furthermore, the light spots of modified regions 111a, 111b, and 111 can also be used to measure the stress condition of substrate 110. In addition, the size of the light spot is a scaled-up version of the size of modified region 111 (e.g., greater than or equal to 10, and related to the degree of modification), so the first imaging device 101 can therefore employ a lower resolution imaging device, and the first collimated beam L1 may not necessarily be a collimated beam.

[0056] Please refer to Figure 8 and Figure 10 , Figure 10 This is a schematic diagram of the second image acquired by the substrate modification region measurement device according to the fourth embodiment of the present invention. Figure 10In the second image IMG2, according to the above explanation, except for the modified region 111, the portion of the second collimated beam L2 passing through the substrate 110 cannot be imaged in the second imaging device 102 and is therefore black. However, the portion of the second collimated beam L2 passing through the modified region 111 of the substrate 110 can be imaged in the second imaging device 102 because its polarization direction changes. Furthermore, the greater the degree of modification in the modified region 111, the larger the light spot imaged in the modified region 111 of the second image IMG2 will be. For example, in… Figure 10 In the second image IMG2, the degree of modification of modified region 111a is greater than that of other modified regions 111, while the degree of modification of modified region 111b is less than that of other modified regions 111. Furthermore, the size of the light spot is a proportional (e.g., greater than or equal to 10, and related to the degree of modification) magnification of the size of the modified region 111. Therefore, the second imaging device 102 can thus employ a lower resolution imaging device, and the second collimated beam L2 may not necessarily be a collimated beam.

[0057] Please continue to refer to Figures 8-10 When the substrate 110 has dirt or defects 41, 42 (e.g., other particles), Figures 1 to 3 In this example, the microcontroller unit 104 also needs to execute an additional algorithm to identify dirt and defects 41 and 42, removing the dirt and defects 41 and 42 from the image in order to obtain more accurate measurement information of the modified area 111 of the substrate 110. However, through... Figure 8 The practice, and Figure 9 and Figure 10 According to the relevant explanations, dirt and blemishes 41 and 42 cannot change the polarization direction of the light beam, therefore they also appear as black in the first image IMG1 and the second image IMG2, which eliminates the need to... Figures 1 to 3 In the example, the microcontroller unit 104 also needs additional computation time and power consumption to execute the algorithm for judging dirt and defects 41 and 42.

[0058] Next, please refer to Figure 11 , Figure 11 This is a schematic diagram of a substrate modification region measurement device according to the fifth embodiment of the present invention. Different from... Figure 1 In one embodiment, the substrate modification region measurement device further includes polarizers 31, 32, 33, and 34. The polarization directions of polarizers 31 and 32 are orthogonal to each other, the polarization directions of polarizers 33 and 34 are orthogonal to each other, the polarization directions of polarizers 31 and 33 are orthogonal to each other, and the polarization directions of polarizers 32 and 34 are orthogonal to each other. Figure 11 The first and second images obtained by the substrate modification region measurement device and Figure 8 The first and second images obtained by the substrate modification region measurement device in the embodiment are not described in detail here.

[0059] Please refer to Figure 11 and Figure 12 , Figure 12 This is a schematic diagram of the third image acquired by the substrate modification region measurement device according to the fifth embodiment of the present invention. Figure 12 In the third image IMG3, according to the above explanation, apart from the modified region 111, the portion of the third collimated beam L3 passing through the substrate 110 cannot be imaged in the third imaging device 103 and is therefore black. However, the portion of the third collimated beam L3 passing through the modified region 111 of the substrate 110 can be imaged in the third imaging device 103 because its polarization direction changes. Furthermore, the greater the degree of modification in the modified region 111, the larger the light spot imaged in the modified region 111 of the third image IMG3 will be. For example, in… Figure 12 In the third image IMG3, the degree of modification of modified region 111a is greater than that of other modified regions 111, while the degree of modification of modified region 111b is less than that of other modified regions 111. Furthermore, the size of the light spot is a proportional (e.g., greater than or equal to 10, and related to the degree of modification) magnification of the size of the modified region 111. Therefore, the third imaging device 103 can thus employ a lower resolution imaging device, and the third collimated beam L3 may not necessarily be a collimated beam.

[0060] Furthermore, please return to Figure 4 In some embodiments, the first collimated beam in step S801 is a collimated beam passing through a first polarizer, and a second polarizer is provided before the first imaging device; the second collimated beam in step S802 is a collimated beam passing through a second polarizer, and a first polarizer is provided before the second imaging device; the third collimated beam in step S803 is a collimated beam passing through a third polarizer, and a fourth polarizer is provided before the third imaging device. The polarization direction of the first polarizer is orthogonal to the polarization direction of the second polarizer, and the polarization direction of the third polarizer is orthogonal to the polarization direction of the fourth polarizer. When the third collimated beam obliquely illuminates the first surface of the substrate, the polarization direction of the third polarizer is the same as the polarization direction of the second polarizer; when the third collimated beam obliquely illuminates the second surface of the substrate, the polarization direction of the third polarizer is the same as the polarization direction of the second polarizer.

[0061] In summary, the present invention provides a substrate modification area measurement device and method, which can measure the substrate modification area and obtain modification area measurement information. In this way, if the substrate modification area is not completed and / or has defects, it can be modified again or otherwise processed to ensure that the modification area has been completed and has no defects before the substrate enters the etching process, thereby increasing the yield of the formed through-hole substrate.

[0062] The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. Any modifications, equivalent substitutions, and improvements made within the spirit and principles of the present invention should be included within the protection scope of the present invention.

Claims

1. A substrate modification region measuring device, characterized in that, The substrate modification region measurement device includes: A first image capturing device (101) is disposed on a first surface of a substrate (110) and faces the first surface of the substrate (110) to capture images of the substrate (110) to obtain a first image (IMG1). The second imaging device (102) is disposed below the second surface of the substrate (110) and faces the second surface of the substrate (110) to capture images of the substrate (110) to obtain a second image (IMG2), wherein the first surface of the substrate (110) is relative to the second surface of the substrate (110). The microcontroller unit (104) is signal-connected to the first image acquisition device (101) and the second image acquisition device (102) and is used to acquire the modification area measurement information of at least one modification area (111) of the substrate (110) based on the first image (IMG1) and the second image (IMG2); A first collimated light source (121), signal-connected to the microcontroller unit (104), is disposed below the second surface of the substrate (110), facing the second surface of the substrate (110), and is used to provide a first collimated beam (L1) that illuminates the substrate (110) and travels toward the first imaging device (101); and The second collimated light source (122), which is signal-connected to the microcontroller unit (104), is disposed on the first surface of the substrate (110) and faces the first surface of the substrate (110) to provide a second collimated beam (L2) that illuminates the substrate (110) and travels toward the second imaging device (102).

2. The substrate modification region measuring device according to claim 1, characterized in that, The third imaging device (103) is disposed on the first surface of the substrate (110), disposed on one side of the first imaging device (101) and obliquely facing the first surface of the substrate (110), or disposed below the second surface of the substrate (110), disposed on one side of the second imaging device (102) and obliquely facing the second surface of the substrate (110). as well as The third collimated light source (123), which is signal-connected to the microcontroller unit (104), is disposed below the second surface or above the first surface of the substrate (110) and obliquely faces the second surface or the first surface of the substrate (110) to provide a third collimated beam (L3) that illuminates the substrate (110) and travels toward the third imaging device (103). The third imaging device (103) is used to capture images of the substrate (110) to obtain a third image (IMG3). The microcontroller unit (104) is further connected to the first imaging device and is used to obtain the measurement information of the modified region (111) of the substrate (110) based on the first image (IMG1), the second image (IMG2) and the third image (IMG3).

3. The substrate modification region measuring device according to claim 2, characterized in that, The modified area measurement information of the modified area (111) includes the first position of the modified area (111) on the first surface of the substrate (110), the second position of the modified area (111) on the second surface of the substrate (110), and the modification information of the modified area (111). The modification information of the modified area (111) is used to indicate whether the modified area (111) has been modified and / or whether there are defects.

4. The substrate modification region measuring device according to claim 3, characterized in that, The microcontroller unit (104) obtains the first position of the modified region (111) on the first surface of the substrate (110) based on the first image (IMG1), the microcontroller unit (104) obtains the second position of the modified region (111) on the second surface of the substrate (110) based on the second image (IMG2), and the microcontroller unit (104) obtains the modification information of the modified region (111) based on the third image (IMG3), the first position of the modified region (111) on the first surface of the substrate (110), and the second position of the modified region (111) on the second surface of the substrate (110).

5. The substrate modification region measuring device according to claim 1, characterized in that, Two polarizers (31, 32), wherein the two polarization directions of the two polarizers (31, 32) are orthogonal to each other, one of the two polarizers (31, 32) is disposed between the first imaging device (101) and the first surface of the substrate (110), and between the second collimating light source (122) and the first surface of the substrate (110), and the other of the two polarizers (31, 32) is disposed between the second imaging device (102) and the second surface of the substrate (110), and between the first collimating light source (121) and the second surface of the substrate (110).

6. The substrate modification region measuring device according to claim 2, characterized in that, Two polarizers (31, 32), wherein the two polarization directions of the two polarizers (31, 32) are orthogonal to each other, one of the two polarizers (31, 32) is disposed between the first imaging device (101) and the first surface of the substrate (110), and between the second collimating light source (122) and the first surface of the substrate (110), and the other of the two polarizers (31, 32) is disposed between the second imaging device (102) and the second surface of the substrate (110), and between the first collimating light source (121) and the second surface of the substrate (110); as well as Two other polarizers (33, 34), wherein the two polarization directions of the two other polarizers (33, 34) are orthogonal to each other, one of the two other polarizers (33, 34) is disposed between the third imaging device (103) and the first surface or the second surface of the substrate (110), and the other of the two polarizers (31, 32) is disposed between the third collimating light source (123) and the second surface or the first surface of the substrate (110).

7. The substrate modification region measuring device according to claim 2, characterized in that, The first wavelength range of the first collimated beam (L1) is different from or the same as the second wavelength range of the second collimated beam (L2), and the second wavelength range of the second collimated beam (L2) is different from or the same as the third wavelength range of the third collimated beam (L3).

8. The substrate modification region measuring device according to claim 1, characterized in that, The modified region (111) of the substrate (110) is a laser modified region formed after the substrate (110) is irradiated by a laser light source, and the substrate (110) is a glass substrate.

9. The substrate modification region measuring device according to claim 2, characterized in that, The first image capturing device (101), the second image capturing device (102), and the third image capturing device (103) are either color depth-of-field cameras or black-and-white depth-of-field cameras.

10. The substrate modification region measuring device according to claim 7, characterized in that, The light color of any one of the first collimated beam (L1), the second collimated beam (L2), and the third collimated beam (L3) is white, red, green, or blue.

11. The substrate modification region measuring device according to claim 1, characterized in that, The first imaging device (101) and the second collimating light source (122) are integrated into a first telecentric imaging module (21), and the second imaging device (102) and the first collimating light source (121) are integrated into a second telecentric imaging module (22).

12. The substrate modification region measuring device according to claim 2, characterized in that, The third imaging device (103) is disposed on the first surface of the substrate (110), the third collimating light source (123) is disposed below the second surface of the substrate (110), and the substrate modification area measuring device further includes: A fourth image-capturing device (105), signal-connected to the microcontroller unit (104), is disposed below the second surface of the substrate (110) and on one side of the second image-capturing device (102), obliquely facing the second surface of the substrate (110), for capturing images of the substrate (110) to obtain a fourth image; and The fourth collimated light source (124), which is signal connected to the microcontroller unit (104), is disposed on the first surface of the substrate (110) and obliquely faces the first surface of the substrate (110), and is used to provide a fourth collimated beam (L4) that illuminates the substrate (110) and travels toward the fourth imaging device (105). The microcontroller unit (104) acquires measurement information of at least one modified region (111) of the substrate (110) based on the first image (IMG1), the second image (IMG2), the third image (IMG3) and the fourth image.

13. The substrate modification region measuring device according to claim 12, characterized in that, The fourth collimating light source (124) is integrated with the third imaging device (103) to form a third telecardiogram imaging module (23), and the third collimating light source (123) is integrated with the fourth imaging device (105) to form a fourth telecardiogram imaging module (24).

14. A method for measuring the modified region of a substrate, characterized in that, The method for measuring the substrate modification region includes: A first collimated beam (L1) is provided to the second surface of the substrate (110) and travels toward the first imaging device (101), and the first imaging device (101) captures the substrate (110) to obtain a first image (IMG1), wherein the second surface of the substrate (110) is relative to the first surface of the substrate (110), and the first imaging device (101) is disposed on the first surface of the substrate (110); A second collimated beam (L2) is provided to irradiate the first surface of the substrate (110) and travel toward the second imaging device (102), and the second imaging device (102) is used to capture the substrate (110) to obtain a second image (IMG2), wherein the second imaging device (102) is disposed below the second surface of the substrate (110); A third collimated beam (L3) is provided, obliquely illuminating the second surface or the first surface of the substrate (110) and traveling toward the third imaging device (103), and the third imaging device (103) captures the substrate (110) to obtain a third image (IMG3), wherein the third imaging device (103) is disposed above the first surface of the substrate (110), located to one side of the first imaging device (101), and obliquely facing the first surface of the substrate (110); or, the third imaging device (103) is disposed below the second surface of the substrate (110), located to one side of the second imaging device (102), and obliquely facing the second surface of the substrate (110); and Using a microcontroller unit (104), measurement information of at least one modified region (111) of the substrate (110) is obtained based on the first image (IMG1), the second image (IMG2) and the third image (IMG3).

15. The method for measuring the modified region of a substrate according to claim 14, characterized in that, The method for measuring the substrate modification region also includes: A first collimated beam (L1) is provided to illuminate the second surface of the substrate (110) and travel toward the first imaging device (101), and the first imaging device (101) captures the substrate (110) to obtain a first image (IMG1), wherein the second surface of the substrate (110) is relative to the first surface of the substrate (110), the first imaging device (101) is disposed on the first surface of the substrate (110), a polarizer (31) is disposed between the first surface of the substrate (110) and the first imaging device (101), and another polarizer (32) is disposed between the second surface of the substrate (110) and the first collimated light source (121) for emitting the first collimated beam (L1), and its polarization direction is orthogonal to the polarization direction of the polarizer (31); A second collimated beam (L2) is provided to irradiate the first surface of the substrate (110) and travel toward the second imaging device (102), and the second imaging device (102) is used to capture an image of the substrate (110) to obtain a second image (IMG2), wherein the second imaging device (102) is disposed below the second surface of the substrate (110), another polarizer (32) is disposed between the second surface of the substrate (110) and the second imaging device (102), and the polarizer (31) is disposed between the first surface of the substrate (110) and the second collimated light source (122) for emitting the first collimated beam (L1); and Using a microcontroller unit (104), measurement information of at least one modified region (111) of the substrate (110) is obtained based on the first image (IMG1) and the second image (IMG2).

Images