Display device

Abstract

The invention discloses a display device. The invention provides a display device capable of reducing power consumption. The aperture ratio of the display device is improved. The display device includes a pixel having a first sub-pixel and a second sub-pixel. The first sub-pixel comprises a first coloring layer and a first transistor, and the second sub-pixel comprises a second coloring layer and a second transistor. A channel-forming portion of the semiconductor layer included in the first transistor and the second transistor is disposed so as to overlap at least the first colored layer. The first colored layer absorbs light having a wavelength shorter than that absorbed by the second colored layer, and visible light passes through the semiconductor layer, the electrode, the wiring, and the like constituting the transistor.

Description

Technical Field

[0001] One aspect of the present invention relates to a display device.

[0002] One aspect of the present invention is not limited to the above-described technical fields. As an example of the technical field of one aspect of the present invention disclosed in this specification, examples include semiconductor devices, display devices, light-emitting devices, energy storage devices, memory devices, electronic devices, lighting devices, input devices, input / output devices, driving methods thereof, or manufacturing methods thereof.

[0003] Note that in this specification, etc., a semiconductor device refers to any device capable of operating by utilizing the properties of semiconductors. Transistors, semiconductor circuits, arithmetic processing devices, and memory devices are all types of semiconductor devices. Additionally, imaging devices, electro-optical devices, power generation devices (including thin-film solar cells, organic thin-film solar cells, etc.), and electronic devices sometimes include semiconductor devices. Background Technology

[0004] There is a need for low power consumption in electronic devices. In particular, since portable electronic devices such as smartphones or tablets rely on batteries for power, high power consumption will shorten the usage time on a single charge.

[0005] Liquid crystal displays (LCDs) are known as one type of display device installed in electronic devices. Transmissive liquid crystal displays represent contrast by controlling the amount of light transmitted from the backlight through the optical modulation of liquid crystals, thereby displaying images.

[0006] For example, there are known active matrix liquid crystal display devices that use transistors with metal oxide as the channel forming region as switching elements connected to the electrodes of each pixel (Patent Document 1 and Patent Document 2).

[0007] [Patent Document 1] Japanese Patent Application Publication No. 2007-123861 [Patent Document 2] Japanese Patent Application Publication No. 2007-96055. Summary of the Invention

[0008] One method to reduce the power consumption of a liquid crystal display device (LCD panel) is to efficiently extract light from the backlight.

[0009] One objective of this invention is to provide a display device capable of reducing power consumption. Another objective of this invention is to increase the aperture ratio of the display device. Another objective of this invention is to provide a display device with both high aperture ratio and high reliability. Finally, another objective of this invention is to provide a novel display device.

[0010] Note that the description of these objectives does not preclude the existence of other objectives. One aspect of the invention does not require achieving all of the above objectives. Furthermore, objectives other than those described above can be extracted from the description in the specification, drawings, claims, etc.

[0011] One aspect of the present invention is a display device comprising: a first coloring layer; a second coloring layer; a first transistor; a second transistor; a first display element; and a second display element. The first display element is electrically connected to the first transistor and overlaps with the first coloring layer. The second display element is electrically connected to the second transistor and overlaps with the second coloring layer. The first transistor includes a first semiconductor layer. The second transistor includes a second semiconductor layer. Both the first semiconductor layer and the second semiconductor layer include portions overlapping the first coloring layer.

[0012] Another aspect of the present invention is a display device comprising: a first coloring layer; a second coloring layer; a third coloring layer; a first transistor; a second transistor; a third transistor; a first display element; a second display element; and a third display element. The first display element is electrically connected to the first transistor and overlaps with the first coloring layer. The second display element is electrically connected to the second transistor and overlaps with the second coloring layer. The third display element is electrically connected to the third transistor and overlaps with the third coloring layer. The first transistor includes a first semiconductor layer. The second transistor includes a second semiconductor layer. The third transistor includes a third semiconductor layer. The first, second, and third semiconductor layers all include portions overlapping the first coloring layer.

[0013] In the above structure, it is preferable that the first coloring layer transmits light with a wavelength longer than that transmitted by the second coloring layer. Alternatively, the first coloring layer preferably transmits red light.

[0014] In the above structure, a light source that emits white light is preferably included. In this case, the first coloring layer is preferably located between the light source and the first semiconductor layer, and between the light source and the second semiconductor layer.

[0015] In the above structure, the first transistor preferably includes a first gate electrode and a first electrode and a second electrode connected to the first semiconductor layer. The second transistor preferably includes a second gate electrode and a third electrode and a fourth electrode connected to the second semiconductor layer. In this case, the first electrode, second electrode, third electrode, and fourth electrode all include portions that transmit visible light and overlap with the first coloring layer. Preferably, both the first gate electrode and the second gate electrode include portions that transmit visible light and overlap with the first coloring layer. Alternatively, both the first gate electrode and the second gate electrode preferably block visible light.

[0016] In the above structure, a first wiring and a second wiring are preferably included. Preferably, the first electrode is electrically connected to the first wiring, the second electrode is electrically connected to the first display element, the third electrode is electrically connected to the second wiring, and the fourth electrode is electrically connected to the second display element. The fourth electrode preferably intersects with the second wiring. Alternatively, the fourth electrode preferably intersects with both the first and second wirings. Alternatively, the fourth electrode preferably does not intersect with either the first or second wiring.

[0017] In the above structure, a first wiring and a second wiring are preferably included. In this case, the first transistor includes a first gate electrode, and the second transistor includes a second gate electrode. In this case, the first semiconductor layer includes a portion overlapping the first gate electrode and a portion connected to the first wiring. The second semiconductor layer includes a portion overlapping the second gate electrode and a portion connected to the second wiring. The second semiconductor layer preferably intersects with the second wiring. Alternatively, the second semiconductor layer preferably intersects with both the second wiring and the first wiring. Alternatively, the second semiconductor layer preferably does not intersect with either the first wiring or the second wiring.

[0018] In the above structure, both the first semiconductor layer and the second semiconductor layer preferably contain metal oxides.

[0019] In the above structure, the first display element preferably includes a fifth electrode, a sixth electrode, and liquid crystal. Preferably, the fifth electrode is electrically connected to the first transistor, and both the fifth and sixth electrodes are visible light transmitted.

[0020] According to one aspect of the present invention, a display device capable of reducing power consumption can be provided. According to one aspect of the present invention, the aperture ratio of the display device can be increased. According to one aspect of the present invention, a display device with high aperture ratio and high reliability can be provided. According to one aspect of the present invention, a novel display device can be provided.

[0021] Note that the description of these effects does not preclude the existence of other effects. Furthermore, one embodiment of the invention does not necessarily require all of the aforementioned effects. Additionally, effects other than those described above can be extracted from the description in the specification, drawings, claims, etc. Attached Figure Description

[0022] Figures 1A to 1C This is a structural example of a display device; Figure 2 This is a structural example of a display device; Figure 3A and Figure 3B This is a structural example of a display device; Figure 4 This is a structural example of a display device; Figure 5 This is a structural example of a display device; Figure 6This is a structural example of a display device; Figure 7 This is a structural example of a display device; Figure 8 This is a structural example of a display device; Figure 9 This is a structural example of a display device; Figure 10A and Figure 10B This is a structural example of a display device; Figure 11 This is a structural example of a display device; Figure 12 This is a structural example of a display device; Figure 13A and Figure 13B This is a structural example of a display device; Figure 14A and Figure 14B This is a structural example of a display device; Figure 15A and Figure 15B This is a structural example of a display device; Figure 16A and Figure 16B This is a structural example of a display device; Figures 17A to 17D This is a structural example of an input device; Figures 18A to 18D This is a structural example of an input device; Figure 19A and Figure 19B It is a structural example of a touch panel; Figures 20A to 20C It is a circuit diagram and timing diagram; Figure 21A and Figure 21B It is a structural instance of the display module; Figures 22A to 22D It is a structural example of an electronic device; Figures 23A to 23C It is a structural example of an electronic device. Detailed Implementation

[0023] The embodiments will be described in detail with reference to the accompanying drawings. Note that the present invention is not limited to the following description, and those skilled in the art will readily understand that its methods and details can be varied in many ways without departing from the spirit and scope of the invention. Therefore, the present invention should not be construed as being limited solely to the description of the embodiments shown below.

[0024] In the inventive structure described below, the same reference numerals are used in different figures to indicate the same parts or parts having the same function, and repeated descriptions are omitted. In addition, when indicating parts with the same function, the same shading lines are sometimes used without special additional reference numerals.

[0025] In the accompanying drawings described in this specification, the size of structures, the thickness of layers, and areas are sometimes exaggerated for clarity. Therefore, the invention is not necessarily limited to the dimensions shown in the drawings.

[0026] The ordinal numbers such as "first" and "second" used in this specification are appended to avoid confusion of the constituent elements, and are not intended to limit the quantity.

[0027] A transistor is a type of semiconductor device that can amplify current or voltage, control switching operations (turning on or off), etc. The transistors discussed in this specification include IGFETs (Insulated Gate Field Effect Transistors) and thin-film transistors (TFTs).

[0028] In this specification and the like, a display panel, as one type of display device, refers to a panel capable of displaying (outputting) images, etc. Therefore, a display panel is one type of output device.

[0029] In this specification and other documents, a structure in which connectors such as FPC (Flexible Printed Circuit) or TCP (Tape Carrier Package) are mounted on the substrate of a display panel, or a structure in which ICs are directly mounted on the substrate in the form of COG (Chip On Glass) is referred to as a display panel module or display module, or simply as a display panel.

[0030] Furthermore, in this specification, a touch sensor refers to a sensor capable of detecting the contact, pressure, or proximity of a detected object such as a finger or stylus. It may also have the function of detecting its position information. Therefore, a touch sensor is one type of input device. For example, a touch sensor can have a structure with more than one sensor element.

[0031] Furthermore, in this specification, the substrate including the touch sensor is sometimes referred to as a touch sensor panel, or simply as a touch sensor. Additionally, in this specification, a structure on which a connector such as an FPC or TCP is mounted on the substrate of the touch sensor panel, or a structure on which an IC is mounted on the substrate in a COG manner, is sometimes referred to as a touch sensor panel module, touch sensor module, sensor module, or simply as a touch sensor.

[0032] Note that, as described in this specification, a touchscreen, as one type of display device, has the following functions: displaying (outputting) images on the display surface; and functioning as a touch sensor to detect when a detected object, such as a finger or stylus, touches, is pressed or approaches the display surface. Therefore, a touchscreen is one type of input / output device.

[0033] A touchscreen can also be referred to as a display panel (or display device) with a touch sensor, or a display panel (or display device) with touch sensor functionality.

[0034] A touchscreen may include a display panel and a touch sensor panel. Alternatively, it may have a structure that incorporates touch sensor functionality within or on the surface of the display panel.

[0035] In addition, in this specification, structures with connectors such as FPC or TCP mounted on the substrate of a touch screen, or structures with ICs mounted on the substrate in a COG manner, are sometimes referred to as touch screen modules, display modules, or simply touch screens.

[0036] Implementation Method 1 In this embodiment, a display device according to one aspect of the present invention will be described.

[0037] One aspect of the present invention is a display device comprising a plurality of transmissive liquid crystal elements and transistors electrically connected to the liquid crystal elements.

[0038] A liquid crystal element includes a pair of electrodes and liquid crystal. Both electrodes are visible light luminescent. One of the electrodes is used as a pixel electrode and is electrically connected to a transistor. The other electrode is used as a common electrode and is supplied with the same potential as the other pixels.

[0039] The display area of ​​the display device has a matrix structure of multiple pixels. Each pixel includes two or more sub-pixels. Each sub-pixel includes a pixel electrode, a transistor used as a selection transistor, and a color layer.

[0040] For example, a pixel includes a first sub-pixel and a second sub-pixel. The first sub-pixel includes a first color layer and a first transistor, and the second sub-pixel includes a second color layer and a second transistor. In this case, the first transistor and the second transistor are configured to overlap with the first color layer. More specifically, the portions of the semiconductor layers of the first transistor and the second transistor that form channels are configured to overlap with at least the first color layer.

[0041] Therefore, the light illuminating both the first and second transistors is transmitted through the first color layer. This ensures that the first transistor is affected by light exposure to the same degree as the second transistor. Consequently, contrast discrepancies between adjacent sub-pixels can be prevented.

[0042] Furthermore, it is preferable that the first coloring layer readily absorbs light whose wavelength is shorter than that absorbed by the second coloring layer. Particularly preferable is that the first coloring layer transmits light whose wavelength is longer than that transmitted by the second coloring layer and absorbs other visible light. Thus, since the light obtained by removing short-wavelength light from the incident light through the first coloring layer illuminates the first and second transistors, the influence of light on these transistors can be reduced. Alternatively, the light transmitted through the first coloring layer can be made to have no effect on the individual transistors. Therefore, a display device with extremely high reliability can be realized.

[0043] Here, when setting up a backlight, it is preferable to arrange the backlight such that a first coloring layer is disposed between the first transistor and the second transistor and the backlight. This can suppress the influence of light emanating from the backlight onto the first transistor and the second transistor.

[0044] Alternatively, a first coloring layer can be sandwiched between each transistor on the side opposite to the backlight (the display side). In this case, the influence of external light incident on the display device from the display side on the transistors can be suppressed.

[0045] The semiconductor layer forming the channel of the first and second transistors preferably uses a metal oxide (also known as an oxide semiconductor (OS)) that exhibits semiconductor properties. Furthermore, the semiconductor layer preferably includes a pair of low-resistance regions sandwiching the channel formation region. These low-resistance regions are those with higher conductivity than the channel formation region, and can also be described as oxide conductors (OC). Therefore, since the region where the semiconductor layer is disposed is used as a region that transmits visible light (also known as a transmission region), the aperture ratio of the display device can be increased.

[0046] The electrodes and wiring constituting the first and second transistors are preferably made of materials that transmit visible light. Metal oxides are particularly preferred. For example, the gate, source, and drain electrodes of the first and second transistors can be made of conductive materials that are transparent to light. This can further improve the aperture ratio of the display device.

[0047] Since the low-resistance region, source electrode, and drain electrode of the semiconductor layer are transparent, their contacts can be used as transparent regions, thereby further improving the aperture ratio.

[0048] As described above, since the channel formation region of the semiconductor layer is configured to overlap with the first coloring layer, even if the gate electrode is transparent and light is irradiated through the first coloring layer into the channel formation region, the effect on each transistor can be suppressed.

[0049] For example, the first sub-pixel may have a structure in which the pixel electrode overlaps with a transparent semiconductor layer, gate electrode, source electrode, drain electrode, etc.

[0050] Each sub-pixel may also include a capacitor used as a storage capacitor. In this case, it is preferable to use a light-transmitting conductive material for the pair of electrodes constituting the capacitor and the wiring electrically connected to the capacitor. Since each capacitor is not easily affected by light, it can be arranged to overlap with the color layer of each sub-pixel.

[0051] Here, the source and drain electrodes can also be made of transparent materials, and the gate electrode can be made of a light-shielding material. In this case, it is preferable to place the light-shielding gate electrode on the display surface side and to place the first color layer closer to the backlight side than each transistor. As a result, the influence of light from the backlight can be suppressed by the first color layer, and the influence of external light incident from the display surface side can be suppressed by the light-shielding gate electrode.

[0052] The wiring (also called the bus) used to supply signals or potentials to each sub-pixel can also be made of a light-transmitting material. Using light-shielding materials such as metals can reduce wiring resistance, making it preferable. Examples of buses include wiring for supplying gate signals (also called gate lines), wiring for supplying source signals (also called source lines or signal lines), and wiring for supplying common potentials or power potentials (also called power lines). In this case, all areas except the bus can be made transparent, thereby achieving an extremely high aperture ratio.

[0053] A pixel can also have three or more sub-pixels with different colors. In this case, transistors can be arranged in a manner that overlaps with other color layers, rather than in the region where they overlap with the color layer that transmits the shortest wavelength of light. It is particularly preferred that the transistors of the sub-pixels be arranged in a manner that overlaps with the color layer that transmits the longest wavelength of light.

[0054] For example, when a pixel includes sub-pixels corresponding to three colors: red, green, and blue, the transistors included in each sub-pixel can be configured to overlap with a coloring layer other than blue, i.e., a red or green coloring layer. It is particularly preferred that three transistors are configured to overlap with a red coloring layer.

[0055] The following illustrations provide more specific examples.

[0056] [Structure Example 1] Figure 1A A perspective view of the display device 10 is shown. The display device 10 has a structure that conforms to substrates 11 and 12. Figure 1A In the image, substrate 12 is shown as a dashed line. Furthermore, Figure 1A This is equivalent to a perspective view taken from the side opposite to the display surface. In other words, in the display device 10, the side of the substrate 11 is the display surface side.

[0057] The display device 10 includes a display section 13, circuitry 14, and wiring 15. For example, a conductive layer 21, circuitry 14, and wiring 15, which are included in the display section 13 and serve as pixel electrodes, are provided on the substrate 11. Furthermore, Figure 1A An example is shown where IC17 and FPC16 are mounted on substrate 11. Therefore, Figure 1A The structure shown can also be called a display module.

[0058] Circuit 14 can, for example, use a circuit that is used as a scan line drive circuit.

[0059] Wiring 15 has the function of supplying signals or power to the display unit 13 and circuit 14. The signals or power are supplied to wiring 15 from the outside via FPC 16 or from IC 17.

[0060] Figure 1A An example is shown where IC17 is disposed on substrate 11 using a COG (Chip On Glass) method or the like. For example, IC17 is used as an IC for signal line driving circuits, etc. Alternatively, IC17 may not be disposed. Alternatively, IC17 may also be mounted on FPC16 using a COF (Chip On Film) method or the like.

[0061] Figure 1AThis is an enlarged view of a portion of the display unit 13. Multiple conductive layers 21, including those for display elements, are arranged in a matrix within the display unit 13. The conductive layers 21 are used, for example, as pixel electrodes.

[0062] [Example of cross-sectional structure] Figure 1B Show along Figure 1A An example of the cross-section of the cutting line A1-A2 in the diagram. Figure 1B A cross-section of a region including three adjacent pixels (subpixels) is shown. Here, an example is shown where a transmissive liquid crystal element 20 is used as a display element. Figure 1B In the middle, one side of the substrate 11 is the display surface side.

[0063] The display device 10 has a structure in which liquid crystal 22 is sandwiched between substrate 11 and substrate 12. The liquid crystal element 20 includes a conductive layer 21 disposed on one side of substrate 11, a conductive layer 23 disposed on one side of substrate 12, and liquid crystal 22 therebetween. Furthermore, an alignment film 24a is disposed between liquid crystal 22 and conductive layer 21, and an alignment film 24b is disposed between liquid crystal 22 and conductive layer 23.

[0064] The conductive layer 21 is used as a pixel electrode. Furthermore, the conductive layer 23 is used as a common electrode, etc. Both the conductive layer 21 and the conductive layer 23 are capable of transmitting visible light. Therefore, the liquid crystal element 20 is a transmissive liquid crystal element.

[0065] Figure 1B Three liquid crystal elements 20 are shown. Each liquid crystal element 20 overlaps with a coloring layer 41R, coloring layer 41G, or coloring layer 41B. Furthermore, a light-shielding layer 42 is provided between two coloring layers. An insulating layer 26 is provided to cover each coloring layer and the light-shielding layer 42, and a conductive layer 23 is provided to cover the insulating layer 26. Preferably, the light-shielding layer 42 is arranged to overlap with the contact portion of the transistor 30R and the conductive layer 21.

[0066] For example, coloring layer 41R transmits red light and absorbs other wavelengths of visible light. Coloring layer 41G transmits green light and absorbs other wavelengths of visible light. Coloring layer 41B transmits blue light and absorbs other wavelengths of light. Light 25R, light 25G, and light 25B transmitted through coloring layers 41R, 41G, or 41B may each have two or more peaks in the visible light region, preferably light with one peak in the visible light region. Here, coloring layer 41R transmits the longest wavelength of light among the three coloring layers and absorbs other wavelengths of light.

[0067] The color of the light transmitted through coloring layers 41R, 41G and 41B is not limited to these.

[0068] exist Figure 1BIn this configuration, the area with the color layer 41R is designated as display area 13R, the area with the color layer 41G is designated as display area 13G, and the area with the color layer 41B is designated as display area 13B. Furthermore, it is preferable to include a light-shielding area with a light-shielding layer 42 between display areas of different colors.

[0069] A polarizer 39a is disposed on the outer side of substrate 11, and a polarizer 39b is disposed on the outer side of substrate 12. Furthermore, a backlight unit 90 is disposed on the outer side of polarizer 39b. Figure 1B In the display device 10 shown, one side of the substrate 11 is the display surface side.

[0070] Transistors 30R, 30G, and 30B are disposed on substrate 11. Each transistor is used, for example, as a selection transistor for a sub-pixel. Transistor 30R is electrically connected to conductive layer 21 overlapping with color layer 41R. Transistor 30G is electrically connected to conductive layer 21 overlapping with color layer 41G. Transistor 30B is electrically connected to conductive layer 21 overlapping with color layer 41B.

[0071] Figure 1C An enlarged view of transistor 30, which can be applied to transistors 30R, 30G, and 30B, is shown. Figure 1C The transistor 30 shown is a so-called bottom-gate channel etched structure transistor. The transistor 30 includes a conductive layer 31 serving as the gate electrode, an insulating layer 34 serving as the gate insulating layer, a semiconductor layer 32, and a pair of conductive layers 33 serving as the source and drain electrodes. The portion of the semiconductor layer 32 overlapping the conductive layer 31 is used as the channel formation region. The semiconductor layer 32 and the conductive layer 33 are disposed in contact.

[0072] A conductive layer 21, used as a pixel electrode, is disposed on an insulating layer 81 and is electrically connected to a conductive layer 33 through an opening in the insulating layer 81. The insulating layer 81 is preferably used as a planarization layer.

[0073] Here, the conductive layer 31, the semiconductor layer 32, the conductive layer 33, and the insulating layer 34 are all transparent to visible light. Therefore, as... Figure 1B and Figure 1C As shown, light 25R can pass through transistor 30. By overlapping transistor 30, liquid crystal element 20, and color layer 41R, the area where transistor 30 is located is used as a transmission area 40t and also as part of the display area. Thus, a display device with a high aperture ratio (in other words, the ratio of the transmission area to the area of ​​the display area per unit area) can be realized.

[0074] like Figure 1BAs shown, multiple transistors constituting a pixel are arranged overlapping a color layer 41R, and each transistor is illuminated with light 25R of the same wavelength and intensity. Therefore, when the electrical characteristics of each transistor are affected by the illumination of light 25R, the effect on each transistor can be made equal. This prevents differences in contrast between sub-pixels.

[0075] The light 25R that passes through the color layer 41R has the longest wavelength (in other words, lower energy) compared to other lights. Since it does not include light with a shorter wavelength compared to red, it can also be said to be the light that is least likely to be absorbed by semiconductor layers 32. Therefore, even with a structure in which light 25R passes through the semiconductor layers 32 of each transistor, a display device with high reliability can be realized.

[0076] like Figure 2 As shown in transistor 30a, a conductive layer 31a that blocks visible light can also be used on the conductive layer used as the gate electrode. In this way, by shielding the display surface side of semiconductor layer 32, external light incident from the display surface side can be prevented from reaching semiconductor layer 32, thereby achieving a display device with higher reliability. On the other hand, since the portion where conductive layer 31a is provided is used as a light-shielding area 40s, it is similar to... Figure 2 Compared to the structure Figure 1C The structure shown can increase the opening ratio.

[0077] The above is an explanation of structure example 1.

[0078] [Structure Example 2] The following describes more specific examples of display devices.

[0079] [Pixel Structure Example 2-1] Figure 3A This diagram shows a top view of a pixel 40 viewed from the side opposite to the display surface (in other words, the side opposite to the backlight unit 90). Pixel 40 includes sub-pixels 40G, 40R, and 40B. Pixel 40 is connected to wiring 51, which is used as a gate line; wiring 52G, 52R, and 52B, which are used as source lines; and wiring 53, which is used as a power line.

[0080] Sub-pixels 40G, 40R, and 40B are respectively provided with color layers 41G, 41R, and 41B. Here, each color layer is indicated by a dashed line. Furthermore, in... Figure 3A The components representing a part (such as conductive layer 21) are omitted.

[0081] In sub-pixel 40R, transistors 30G, 30R, and 30B, and capacitor 60R are disposed in the area overlapping with the color layer 41R. The conductive or semiconductor layer constituting each transistor and capacitor 60R is preferably made of a material that transmits visible light.

[0082] Figure 3A An example is shown where transistors 30G, 30R, and 30B, which are included in pixel 40, use a bottom-gate structure.

[0083] Sub-pixels 40G and 40B are respectively provided with capacitors 60G and 60B. Each capacitor is disposed in a region overlapping with color layer 41G or color layer 41B. Like capacitor 60R disposed in sub-pixel 40R, each capacitor is preferably transmissive to visible light. Furthermore, at least one of capacitors 60G and 60B may also be disposed in a region overlapping with color layer 41R of sub-pixel 40R. Capacitor 60R may also be disposed in a region overlapping with at least one of color layers 41G and 41B.

[0084] In pixel 40, wiring 51, wiring 52R, wiring 52G, wiring 52B and wiring 53 can use materials that block visible light, while other layers use materials that transmit visible light. Figure 4 The example shown is a pixel 40 divided into a light-blocking area 40s that blocks visible light and a light-transmitting area 40t that transmits visible light. Thus, since almost all areas except the area where the bus is located can be light-transmitting areas 40t, the aperture ratio can be increased compared to existing display devices.

[0085] Figure 3B yes Figure 3A The circuit diagram for pixel 40 is shown. Figure 3B In addition to the above-mentioned structures, liquid crystal element 20R, liquid crystal element 20G and liquid crystal element 20B are also shown.

[0086] In transistor 30R, the gate is electrically connected to wiring 51, one of the source and drain is electrically connected to wiring 52R, and the other of the source and drain is electrically connected to one electrode of capacitor 60R and one electrode (pixel electrode) of liquid crystal element 20R.

[0087] In transistor 30G, the gate is electrically connected to wiring 51, one of the source and drain crosses wiring 52R and is electrically connected to wiring 52G, and the other of the source and drain crosses wiring 52R and wiring 52G and is electrically connected to one electrode of capacitor 60G and pixel electrode of liquid crystal element 20G.

[0088] In transistor 30B, the gate is electrically connected to wiring 51, one of the source and drain is electrically connected to wiring 52B, and the other of the source and drain is electrically connected to one electrode of capacitor 60B and the pixel electrode of liquid crystal element 20B.

[0089] The other electrode of capacitors 60R, 60G, and 60B is electrically connected to wiring 53.

[0090] [Example 2-1 of a cross-sectional structure] Figure 5 Show along Figure 3A The cut lines B1-B2 and C1-C2 are shown in cross-section. Cut lines B1-B2 are lines that pass through wiring 52R, transistor 30R, capacitor 60R, and wiring 53, etc., and cut lines C1-C2 are lines that pass through transistor 30G, crossover 55, capacitor 60G, and wiring 53, etc.

[0091] The following is about the above structural example 1 and Figure 1B The descriptions of the parts described are omitted. Furthermore, unless otherwise specified, the same reference numerals will be used to describe layers obtained by processing the same film.

[0092] Transistor 30R and transistor 30G are bottom-gate transistors. In addition, capacitor 60R and the like are composed of a conductive layer 31, a conductive layer 33, and a portion of an insulating layer 34 between the conductive layer 31 and the conductive layer 33.

[0093] There is no insulating layer between the conductive layer 33 constituting the source or drain electrode of each transistor and the conductive layer constituting wiring 52R, etc. Therefore, for example, wiring 52R contacts the top surface and side surface of one of the source and drain electrodes of transistor 30R to be electrically connected to transistor 30R.

[0094] There is no insulating layer between the conductive layer 31 constituting the gate electrode of each transistor and the conductive layers such as wiring 51 (not shown) and wiring 53. For example, wiring 53 contacts the top and side surfaces of the conductive layer 31 constituting capacitor 60R to be electrically connected to capacitor 60R.

[0095] exist Figure 5 An insulating layer 82 is provided to cover transistor 30R and the like, and an insulating layer 81, which serves as a planarization film, is provided on the insulating layer 82. The insulating layer 82 is preferably used as a protective film to suppress the diffusion of impurities to transistor 30R and the like. For example, the insulating layer 82 can be made of an inorganic insulating material, and the insulating layer 81 can be made of an organic insulating material.

[0096] The conductive layer 21 is electrically connected to the conductive layer 33 in the area overlapping with the capacitor 60R through openings provided in the insulating layers 81 and 82. By making the connection portion of the conductive layer 21 and the conductive layer 33 overlap with the capacitor 60R, the pixel area can be reduced, and a display device with a higher resolution can be realized.

[0097] Sometimes, the cell gap of the liquid crystal element 20 is larger in the portion overlapping the connection between the conductive layer 21 and the conductive layer 33 than in other portions. Furthermore, because uneven shapes easily form on the top surface of the conductive layer 21 at the connection, the initial alignment of the liquid crystal 22 differs from other portions, sometimes causing light leakage. Since light leakage leads to a decrease in contrast, therefore... Figure 5 As shown, it is preferable to arrange the light-shielding layer 42 in the area overlapping with the connecting portion. Furthermore, when the connecting portion can sufficiently drive the liquid crystal, it is preferable to not provide the light-shielding layer 42 in this portion and utilize it as part of the display area, thereby improving the aperture ratio.

[0098] Here, since there is no insulating layer between the conductive layers 33 constituting wiring 52G and wiring 52R, a short circuit will occur when these conductive layers cross. Therefore, at the crossing portion 55, the two conductive layers 33 sandwiching wiring 52G and wiring 52R are electrically connected to conductive layer 31 through openings provided in insulating layer 34. Conductive layer 31 partially overlaps with wiring 52G and wiring 52R through insulating layer 34. In other words, the crossing portion 55 can also be described as having a bridge structure.

[0099] Sometimes, at the intersection 55, electrical noise from wirings 52G and 52R, transmitted to the conductive layer 31 overlapping with wirings 52G and 52R, can affect the display of the liquid crystal element 20G. However, since pixel 40 has a structure in which transistors 30G are not disposed in sub-pixels 40G, the area of ​​capacitor 60G can be larger than that of capacitor 60R. As a result, a structure less susceptible to noise can be achieved. Furthermore, since capacitor 60G transmits visible light, a high aperture ratio can be maintained even if the area of ​​capacitor 60G is increased. In addition, as a method to reduce the impact of noise, it is preferable to minimize the area of ​​the intersection between wirings 52G or 52R and conductive layer 31, thereby reducing the capacitance between them.

[0100] The above is an explanation of example 2-1 of the cross-sectional structure.

[0101] [Pixel Structure Example 2-2] Figure 6 Showing with Figure 3A Different top-view diagrams. Additionally, circuit diagrams can be referenced. Figure 3B .

[0102] Figure 6The structure shown is an example of transistors using a top-gate structure, such as transistors 30R, 30G, and 30B.

[0103] [Example 2-2 of cross-sectional structure] Figure 7 Show along Figure 6 A schematic diagram of the cross-sections of cutting lines B3-B4 and C3-C4.

[0104] For example, transistor 30R has an insulating layer 34 serving as a gate insulating layer and a conductive layer 31 serving as a gate electrode stacked on semiconductor layer 32. Furthermore, an insulating layer 82 is provided to cover the insulating layer 34 and the conductive layer 31, and a conductive layer 33 serving as a source electrode and a drain electrode is provided on the insulating layer 82. Semiconductor layer 32 includes a low-resistance region 32a in a region that does not overlap with conductive layer 31. Conductive layer 33 is electrically connected to low-resistance region 32a through an opening provided in insulating layer 82.

[0105] At the intersection 55, a pair of conductive layers 33 clamping wires 52G and 52R are electrically connected to a conductive layer 31 that intersects wires 52G and 52R across an insulating layer 82.

[0106] The region of the semiconductor layer 32 that overlaps with the conductive layer 31 is used as a channel formation region. A pair of low-resistance regions 32a are formed sandwiching this channel formation region. The carrier concentration or impurity concentration of the low-resistance regions 32a is higher than that of the channel formation region. When an oxide semiconductor (OS) is used as the semiconductor layer 32, the low-resistance regions 32a can also be referred to as oxide conductors (OC).

[0107] [Pixel Structure Examples 2-3] Figure 8 Showing a part of its structure and Figure 6 Different top-view diagrams. Additionally, circuit diagrams can be referenced. Figure 3B .

[0108] Figure 8 The structure shown is Figure 6 The difference in the structure shown is that a portion of the low-resistance region 32a is used as wiring in the sub-pixel.

[0109] [Examples of cross-sectional structures 2-3] Figure 9 Show along Figure 8 A schematic diagram of the cross-sections of cutting lines B5-B6 and C5-C6.

[0110] For example, focusing on transistor 30R, a portion of the low-resistance region 32a is electrically connected to wiring 52R without passing through conductive layer 33.

[0111] Focusing on transistor 30G, a portion of low-resistance region 32a intersects with wiring 52R and wiring 52G, and is electrically connected to conductive layer 33, which forms an electrode of capacitor 60G.

[0112] Thus, a portion of the low-resistance region 32a of the semiconductor layer 32 is used as wiring in the pixel, for example with... Figure 6 and Figure 7 Compared to the structure shown, the number of contact parts can be reduced. Therefore, a display device with a higher resolution can be realized.

[0113] [Variation Example] The above example shows a liquid crystal element with a pair of electrodes arranged in a vertical electric field above and below the liquid crystal. However, the structure of the liquid crystal element is not limited to this, and various types of liquid crystal elements can be used.

[0114] Figure 10A A cross-sectional schematic diagram of a display device including a liquid crystal element using FFS (Fringe Field Switching) mode is shown.

[0115] The liquid crystal element 20R includes a conductive layer 21 used as a pixel electrode and a conductive layer 23 that overlaps the conductive layer 21 with an insulating layer 83. The conductive layer 21 has a slit-like or comb-like top surface shape.

[0116] In this structure, the overlapping portion of conductive layer 21 and conductive layer 23 forms a capacitor, which can be used as a storage capacitor. Therefore, by eliminating the capacitor 60R, the area occupied by pixel 40 can be reduced, thus enabling a high-resolution display device.

[0117] exist Figure 10A In the process, the conductive layer 21, which serves as the pixel electrode, is located on one side of the liquid crystal 22, but as... Figure 10B As shown, the conductive layer 23, which is used as a common electrode, can also be located on one side of the liquid crystal 22.

[0118] The structures of transistors 30R, 30G, and cross section 55 are not limited to this, and the structures shown above can be appropriately interchanged.

[0119] [Structure Example 3] The above shows an example where the coloring layer or the like is disposed on one side of the substrate 12. However, by disposing the coloring layer or the like on one side of the substrate 11, the structure on the substrate 12 side can be simplified. Furthermore, since high positional alignment is not required when bonding the substrate 11 and the substrate 12, the yield can be increased.

[0120] [Example 3-1 of a cross-sectional structure] Figure 11 A schematic diagram of the cross-section is shown. Figure 11The structure shown is Figure 5 The difference in the structure shown is that the coloring layer 41R and coloring layer 41G are disposed on one side of the substrate 11.

[0121] exist Figure 11 In this configuration, color layers 41R and 41G are located between insulating layers 82 and 81. Color layer 41R is configured to cover transistors 30G, 30R, 30B (not shown), capacitor 60R, etc. Furthermore, color layer 41G is configured to cover capacitor 60G.

[0122] A conductive layer 23 and an alignment film 24b are provided on one side of the substrate 11 of the substrate 12. Since the conductive layer 23 and the alignment film 24b can be provided throughout the display area without the need for fine processing, the structure can be simplified compared to the case of forming a color layer 41R, etc.

[0123] As described above, since the contact area between the conductive layer 21, which is used as a pixel electrode, and other conductive layers causes light leakage, it is preferable to cover the contact area with a light-shielding layer. However, as Figure 5 As shown, when a light-shielding layer is provided on one side of substrate 12, high alignment is required when bonding substrate 11 and substrate 12, thus reducing the effect of providing a coloring layer on one side of substrate 11. Therefore, the light-shielding layer is preferably provided on one side of substrate 11.

[0124] exist Figure 11 In this configuration, a light-shielding layer 57 is disposed at a position overlapping the contact portion. Since the light-shielding layer 57 is formed by processing, for example, the same conductive film as the wiring 53 or wiring 51, it can be formed without adding any processing steps.

[0125] When the light-shielding layer 57 is conductive, it can be structured as an island and electrically insulated from other wiring or electrodes. In other words, the light-shielding layer 57 can be in an electrically floating state. Alternatively, for example, the light-shielding layer 57 can be used as an electrode of the capacitor 60R. Alternatively, a portion of the wiring 51 can also serve as the light-shielding layer 57 by overlapping with a contact portion.

[0126] Figure 12 The diagram shows a light-shielding layer 58 instead of a light-shielding layer. Figure 11 An example of light-shielding layer 57 is shown.

[0127] A light-shielding layer 58 is disposed on the upper part of the contact portion of the conductive layer 21. The light-shielding layer 58 has the function of blocking visible light or absorbing at least a portion of visible light.

[0128] The light-shielding layer 58 can also be used as a gap spacer to maintain the distance between the substrate 11 and the substrate 12. Therefore, when an external force is applied, such as pressing the display surface or bending the display device, or when the display device is vibrated, the cell gap of the liquid crystal element 20R and the like is not easily changed, and thus interference or color change caused by the change in cell gap is not easily generated.

[0129] The light-shielding layer 58 is preferably designed to prevent short circuits between the conductive layer 21 and the conductive layer 23, and its top surface is at least insulating.

[0130] For example, the light-shielding layer 58 can be made of a resin containing pigments, dyes, or carbon black. Furthermore, when the resin is conductive, a two-layer structure can be used, in which an insulating film covers the resin after its formation. When the alignment film 24a has sufficiently high insulation and sufficiently covers the light-shielding layer 58, the top surface of the light-shielding layer 58 can also be conductive.

[0131] Alternatively, a light-shielding layer 58 can be provided on one side of substrate 12, but in this case, a high alignment is required when bonding substrates 11 and 12. Therefore, as... Figure 12 As shown, the light-shielding layer 58 is preferably disposed on one side of the substrate 11.

[0132] [Structure Example 4] Figure 3A and Figure 3B The diagram illustrates a structure where pixel 40 is connected to one gate line and three source lines, but is not limited to this. Below, examples of structures where pixel 40 is connected to three gate lines are shown.

[0133] [Pixel Structure Example 4] Figure 13A The pixel 40 shown is connected to wiring 51G, wiring 51R and wiring 51B which are used as gate lines, wiring 52 which is used as source lines and wiring 53 which is used as power lines.

[0134] Figure 13A Showing with Figure 3A Similarly, this is an example of a transistor using a bottom-gate structure for each transistor.

[0135] Transistor 30R, transistor 30G, transistor 30B, and capacitor 60R are arranged to overlap with color layer 41R. Capacitor 60G and capacitor 60B are arranged to overlap with color layer 41G and color layer 41B, respectively.

[0136] Figure 13B yes Figure 13A The circuit diagram for pixel 40 is shown.

[0137] In transistor 30R, the gate is electrically connected to wiring 51R, one of the source and drain is electrically connected to wiring 52, and the other is electrically connected to one electrode of capacitor 60R and one electrode (pixel electrode) of liquid crystal element 20R.

[0138] In transistor 30G, the gate crosses with wiring 51R and is electrically connected to wiring 51G. One of the source and drain is electrically connected to wiring 52. The other of the source and drain crosses with wiring 51R and wiring 51G and is electrically connected to one electrode of capacitor 60G and the pixel electrode of liquid crystal element 20G.

[0139] In transistor 30B, the gate is electrically connected to wiring 51B, one of the source and drain is electrically connected to wiring 52, and the other of the source and drain is electrically connected to one electrode of capacitor 60B and the pixel electrode of liquid crystal element 20B.

[0140] The other electrode of capacitors 60R, 60G, and 60B is electrically connected to wiring 53.

[0141] [Structure Example 5] The above shows an example where one of the source and drain terminals or the gate of transistor 30G includes a cross-section that intersects with wiring. Since electrical noise from the wiring at this cross-section affects the display, it is preferable not to provide a cross-section.

[0142] [Pixel Structure Example 5-1] Figure 14A The structure shown is Figure 3A The difference in the structure shown is that wiring 52R is provided between transistor 30G and transistor 30B; and there is no crossover 55.

[0143] exist Figure 14A In this configuration, transistors 30R and 30B are disposed between wiring 52R and wiring 52B, and transistor 30G is disposed between wiring 52R and wiring 52G. Furthermore, wiring 52R includes a portion that overlaps with the color layer 41R.

[0144] exist Figure 14A In this configuration, wiring 52R is located along the longitudinal direction of the area where the color layer 41R is disposed. When wiring 52R has light-blocking properties, the display area of ​​sub-pixel 40R includes a non-display area (light-blocking area) extending in the longitudinal direction. Therefore, it is preferable to increase the width of the color layer 41R in the transverse direction by considering the width of wiring 52R.

[0145] With the above structure, except that no intersection is needed, it is compatible with... Figure 3AIn contrast, wiring 52G, wiring 52R, and wiring 52B can be configured to be separated from each other. This reduces parasitic capacitance between wirings, making it suitable for displays with high frame rates.

[0146] Figure 14B yes Figure 14A The circuit diagram for pixel 40 is shown.

[0147] In transistor 30R, the gate is electrically connected to wiring 51, one of the source and drain is electrically connected to wiring 52R, and the other of the source and drain is electrically connected to one electrode of capacitor 60R and one electrode (pixel electrode) of liquid crystal element 20R.

[0148] In transistor 30G, the gate is electrically connected to wiring 51, one of the source and drain is electrically connected to wiring 52G, and the other of the source and drain is electrically connected to one electrode of capacitor 60G and the pixel electrode of liquid crystal element 20G.

[0149] In transistor 30B, the gate is electrically connected to wiring 51, one of the source and drain is electrically connected to wiring 52B, and the other of the source and drain is electrically connected to one electrode of capacitor 60B and the pixel electrode of liquid crystal element 20B.

[0150] [Pixel Structure Example 5-2] Figure 15A The circuit diagram for the structure described below is shown. Figure 15A A pixel unit 40U comprising six sub-pixels is shown. A display area can be constructed by arranging the pixel units 40U in a matrix configuration.

[0151] Figure 15A The pixel unit 40U shown has a sub-pixel 40R and a sub-pixel 40G arranged between a wiring 52R and a wiring 52G from the left side. A wiring 52B is arranged adjacent to the wiring 52G. Sub-pixels 40B and 40R are arranged between the wiring 52B and the wiring 52R. A wiring 52G is arranged adjacent to the wiring 52R. Sub-pixels 40G and 40B are arranged between the wiring 52G and the wiring 52B.

[0152] Each of two adjacent sub-pixels includes at least one transistor. These two transistors are configured to overlap with one of the two color layers included in the two sub-pixels. Preferably, the transistors are configured to overlap with the color layer that absorbs shorter wavelengths of light.

[0153] For example, suppose color layer 41R transmits red, color layer 41G transmits green, and color layer 41B transmits blue. When sub-pixel 40R and sub-pixel 40G are combined, and when sub-pixel 40R and sub-pixel 40B are combined, the two transistors are arranged to overlap with the red color layer 41R. On the other hand, when sub-pixel 40G and sub-pixel 40B are combined, the two transistors are arranged to overlap with the green color layer 41G.

[0154] For example Figure 15B Shown in Figure 15A The circuit diagram shown is arranged with shaded layers 41R, 41G, and 41B.

[0155] [Pixel Structure Example 5-3] Figure 16A The pixel 40 shown includes four sub-pixels with sub-pixels 40W. Pixel 40 is connected to two gate lines (wiring 51a, wiring 51b), two source lines (wiring 52a, wiring 52b), and one power line (wiring 53). In pixel 40, the four sub-pixels are arranged in a 2×2 matrix in the area surrounded by wiring 51a, wiring 51b, wiring 52a, and wiring 52b.

[0156] Subpixel 40W is, for example, a subpixel that emits white light. Therefore, it is not necessary to set a color layer in subpixel 40W.

[0157] Pixel 40 includes at least four transistors. These four transistors are used as selection transistors for each sub-pixel. These four transistors are configured to overlap with the color layer 41R.

[0158] For example, Figure 16B Show Figure 16A The circuit diagram shown illustrates the arrangement of the shaded layers. No shaded layer is applied in the 40W area of ​​the sub-pixel.

[0159] The above is a description of various structural examples of display devices.

[0160] [Components] The following explains each of the above-mentioned components.

[0161] [Substrate] The substrate included in the display panel can be made of a material with a flat surface. As the side of the substrate that extracts light from the display element, a material that allows that light to pass through is used. For example, materials such as glass, quartz, ceramic, sapphire, or organic resin can be used.

[0162] By using a thin substrate, display panels can be made lighter and thinner. Furthermore, by using a substrate whose thickness allows for flexibility, flexible display panels can be achieved. Alternatively, glass thin enough to be flexible can be used as the substrate. Alternatively, composite materials combining glass and resin materials can be used with an adhesive layer.

[0163] [transistor] The transistor includes: a conductive layer serving as a gate electrode; a semiconductor layer; a conductive layer serving as a source electrode; a conductive layer serving as a drain electrode; and an insulating layer serving as a gate insulating layer.

[0164] The structure of the transistors included in the display device according to one aspect of the present invention is not particularly limited. For example, planar transistors, interleaved transistors, or anti-interleaved transistors can be used. Furthermore, top-gate or bottom-gate transistor structures can also be used. Additionally, gate electrodes can be provided above and below the channel.

[0165] There are no particular restrictions on the crystallinity of the semiconductor material used in transistors; amorphous semiconductors or crystalline semiconductors (microcrystalline semiconductors, polycrystalline semiconductors, single-crystal semiconductors, or semiconductors with a portion of crystalline regions) can be used. Crystalline semiconductors are preferred because they can suppress transistor performance degradation.

[0166] Furthermore, as the semiconductor material for the transistor, a metal oxide with a bandgap of 2 eV or more, preferably 2.5 eV or more, and more preferably 3 eV or more, can be used. Typically, metal oxides containing indium can be used, such as CAC-OS, which will be described later.

[0167] In addition, transistors using metal oxides, which have a wider bandgap than silicon and a lower carrier density, are able to retain the charge stored in the capacitor connected in series with the transistor for a long period of time due to their low off-state current.

[0168] For example, a film containing indium, zinc, and M (metals such as aluminum, titanium, gallium, germanium, yttrium, zirconium, lanthanum, cerium, tin, neodymium, or hafnium) can be used as a semiconductor layer, which is represented by "In-M-Zn oxide".

[0169] When the metal oxide constituting the semiconductor layer is an In-M-Zn type oxide, it is preferable that the atomic ratio of the metal elements in the sputtering target used to form the In-M-Zn oxide film satisfies In≥M and Zn≥M. Preferred atomic ratios of the metal elements in this sputtering target include In:M:Zn = 1:1:1, In:M:Zn = 1:1:1.2, In:M:Zn = 3:1:2, In:M:Zn = 4:2:3, In:M:Zn = 4:2:4.1, In:M:Zn = 5:1:6, In:M:Zn = 5:1:7, and In:M:Zn = 5:1:8. Note that the atomic ratio of the formed semiconductor layer can vary within ±40% of the atomic ratio of the metal elements in the sputtering target described above.

[0170] The bottom-gate structure transistor shown in this embodiment is preferred because it reduces manufacturing steps. Furthermore, by using metal oxides, the metal oxides can be formed at lower temperatures than polycrystalline silicon, and materials with low heat resistance can be used as materials for wiring or electrodes beneath the semiconductor layer and as substrate materials, thereby expanding the range of material choices. For example, a very large area glass substrate can be appropriately used.

[0171] Metal oxide films with low carrier density can be used as semiconductor layers. For example, a semiconductor layer with a carrier density of 1 × 10⁻⁶ can be used. 17 / cm 3 The following is preferred: 1×10 15 / cm 3 Hereinafter, 1×10 is more preferred. 13 / cm 3 Hereinafter, 1×10 is further preferred. 11 / cm 3 The following is a further preferred option: less than 1×10 10 / cm 3 1×10 -9 / cm 3 The above-mentioned metal oxides are referred to as high-purity intrinsic or substantially high-purity intrinsic metal oxides. Therefore, due to their low impurity concentration and defect energy level density, they can be considered metal oxides with stable properties.

[0172] Note that the present invention is not limited to the above description, and materials with appropriate compositions can be used according to the desired semiconductor and electrical characteristics (field-effect mobility, threshold voltage, etc.) of the transistor. Furthermore, it is preferable to appropriately set the carrier density, impurity concentration, defect density, ratio of metal elements to oxygen atoms, interatomic distance, density, etc., of the semiconductor layer to obtain the desired semiconductor characteristics of the transistor.

[0173] When the metal oxide constituting the semiconductor layer contains silicon or carbon, one of Group 14 elements, the oxygen defects in the semiconductor layer increase, causing the semiconductor layer to become n-type. Therefore, the concentration of silicon or carbon in the semiconductor layer (the concentration measured by secondary ion mass spectrometry) is set to 2 × 10⁻⁶. 18 atoms / cm 3 The following is preferred: 2×10 17 atoms / cm 3 the following.

[0174] Furthermore, sometimes when alkali metals and alkaline earth metals bond with metal oxides, charge carriers are generated, increasing the off-state current of the transistor. Therefore, the concentration of alkali metals or alkaline earth metals in the semiconductor layer, measured by secondary ion mass spectrometry, was set to 1 × 10⁻⁶. 18 atoms / cm 3 The following is preferred: 2×10 16 atoms / cm 3 the following.

[0175] Furthermore, when the metal oxide constituting the semiconductor layer contains nitrogen, electrons are generated as charge carriers, increasing the charge carrier density and making it easier to achieve n-type characteristics. As a result, transistors using nitrogen-containing metal oxides tend to become normally-on. Therefore, the nitrogen concentration of the semiconductor layer, as measured by secondary ion mass spectrometry, is preferably 5 × 10⁻⁶. 18 atoms / cm 3 the following.

[0176] Oxide semiconductors are classified into single-crystal oxide semiconductors and non-single-crystal oxide semiconductors. Non-single-crystal oxide semiconductors include CAAC-OS (c-axis-aligned crystalline oxide semiconductor), polycrystalline oxide semiconductors, nc-OS (nanocrystalline oxide semiconductor), a-like OS (amorphous-like oxide semiconductor), and amorphous oxide semiconductors, etc.

[0177] The semiconductor layer of the transistor disclosed as one aspect of the present invention can also use CAC-OS (Cloud-Aligned Composite oxide semiconductor).

[0178] The semiconductor layer of the transistor disclosed in one embodiment of the present invention can use the aforementioned non-single-crystal oxide semiconductor or CAC-OS. Furthermore, nc-OS or CAAC-OS is preferred as the non-single-crystal oxide semiconductor.

[0179] In one embodiment of the invention, CAC-OS is preferably used as the semiconductor layer of the transistor. By using CAC-OS, the transistor can be endowed with high electrical characteristics or high reliability.

[0180] The semiconductor layer can also be a hybrid film comprising two or more of the following regions: CAAC-OS, polycrystalline oxide semiconductor, nc-OS, a-like OS, and amorphous oxide semiconductor. Hybrid films sometimes have, for example, a single-layer structure or a stacked structure comprising two or more of the aforementioned regions.

[0181] <The Structure of CAC-OS> The following describes the configuration of a CAC (Cloud-Aligned Composite)-OS in a transistor that can be used in one aspect of the present invention.

[0182] CAC-OS, for example, refers to a composition in which elements are unevenly distributed within a metal oxide, wherein the size of the material containing the unevenly distributed elements is 0.5 nm or more and 10 nm or less, preferably 1 nm or more and 2 nm or approximately. Note that below, the state in which one or more metal elements are unevenly distributed within a metal oxide and the regions containing those metal elements are mixed is also referred to as mosaic or patch-like, wherein the size of the region is 0.5 nm or more and 10 nm or less, preferably 1 nm or more and 2 nm or approximately.

[0183] The metal oxide preferably contains at least indium. In particular, it preferably contains both indium and zinc. In addition, it may also contain one or more of the following: aluminum, gallium, yttrium, copper, vanadium, beryllium, boron, silicon, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, and magnesium.

[0184] For example, CAC-OS in In-Ga-Zn oxides (in particular, In-Ga-Zn oxides can be referred to as CAC-IGZO) refers to materials that are indium oxides (hereinafter referred to as InO). X1 (X1 is a real number greater than 0) or indium zinc oxide (hereinafter referred to as In X2 Zn Y2 O Z2 (X2, Y2, and Z2 are real numbers greater than 0) and gallium oxide (hereinafter referred to as GaO) X3 (X3 is a real number greater than 0) or gallium zinc oxide (hereinafter referred to as Ga X4 Zn Y4 O Z4 (X4, Y4, and Z4 are real numbers greater than 0) etc., thus forming a mosaic pattern, and the mosaic-shaped InOX1 or In X2 Zn Y2 O Z2 The composition (hereinafter also referred to as cloud-like) is uniformly distributed in the membrane.

[0185] In other words, CAC-OS is a system with GaO X3 The region with In as the main component and X2 Zn Y2 O Z2 or InO X1 A composite metal oxide consisting of regions that are the main components mixed together. In this specification, for example, when the ratio of the number of In atoms to the number of element M atoms in the first region is greater than that in the second region, the In concentration in the first region is higher than that in the second region.

[0186] Note that IGZO is a general term, sometimes referring to compounds containing In, Ga, Zn, and O. A typical example is InGaO3 (ZnO). m1 (m1 is a natural number) or In （1＋x0） Ga （1-x0） O3 (ZnO) m0 (-1≤x0≤1, m0 is any number) represents a crystalline compound.

[0187] The aforementioned crystalline compounds have single-crystal, polycrystalline, or CAAC structures. The CAAC structure is a crystalline structure in which multiple IGZO nanocrystals have c-axis orientation and are connected in a non-oriented manner on the ab plane.

[0188] On the other hand, CAC-OS is related to the material composition of metal oxides. CAC-OS refers to a material composition containing In, Ga, Zn, and O, in one part of which nanoparticle-like regions with Ga as the main component are observed, and in another part, nanoparticle-like regions with In as the main component are observed to be randomly dispersed in a mosaic pattern. Therefore, in CAC-OS, the crystal structure is a secondary factor.

[0189] CAC-OS does not contain stacked structures consisting of two or more different types of films. For example, it does not contain a structure consisting of two layers: one with In as the main component and the other with Ga as the main component.

[0190] Note that sometimes GaO cannot be observed. X3 Regions with In as the main component X2 Zn Y2 O Z2 or InO X1 Clear boundaries between regions that are the main components.

[0191] In the case where CAC-OS contains one or more of the elements selected from aluminum, yttrium, copper, vanadium, beryllium, boron, silicon, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, and magnesium to replace gallium, CAC-OS refers to a composition in which nanoparticle-like regions with the element as the main component are observed in one part, and nanoparticle-like regions with In as the main component are observed to be randomly dispersed in a mosaic pattern in another part.

[0192] CAC-OS can be formed, for example, by sputtering without intentionally heating the substrate. When forming CAC-OS by sputtering, one or more gases selected from inert gases (typically argon), oxygen gases, and nitrogen gases can be used as the film-forming gas. Furthermore, the lower the proportion of oxygen gas in the total flow rate of the film-forming gas during film formation, the better; for example, the oxygen gas flow rate ratio is set to 0% or more and less than 30%, preferably 0% or more and less than 10%.

[0193] CAC-OS has the following characteristics: when measured using the out-of-plane method (XRD), one of the methods for X-ray diffraction, with θ / 2θ scanning, no clear peak is observed. In other words, based on X-ray diffraction, it can be determined that there is no orientation in the ab plane direction or the c-axis direction within the measurement region.

[0194] Furthermore, in the electron diffraction pattern of CAC-OS obtained by irradiating it with an electron beam with a diameter of 1 nm (also known as a nanobeam), a ring-shaped region of high brightness and multiple bright spots within this ring-shaped region were observed. Therefore, based on the electron diffraction pattern, it can be concluded that the crystal structure of CAC-OS has an nc (nano-crystal) structure that is unoriented in both the planar and cross-sectional directions.

[0195] Furthermore, for example, in CAC-OS of In-Ga-Zn oxides, based on EDX surface analysis images obtained by energy dispersive X-ray spectroscopy (EDX), it can be confirmed that: it has GaO X3 Regions with In as the main component and X2 Zn Y2 O Z2 or InO X1 A mixture of components whose main components are unevenly distributed in different regions.

[0196] CAC-OS differs in structure from IGZO compounds, which have a uniform distribution of metallic elements, and thus exhibits different properties. In other words, CAC-OS possesses properties centered around GaO. X3 Regions with In as the main component and InX2 Zn Y2 O Z2 or InO X1 The regions that are the main components are separated from each other, and the regions that are the main components of each element are mosaic-like.

[0197] Here, in In X2 Zn Y2 O Z2 or InO X1 The conductivity of regions with GaO as the main component is higher than that of regions with GaO as the main component. X3 The region is dominated by components such as In. In other words, when charge carriers flow through a region dominated by In... X2 Zn Y2 O Z2 or InO X1 When In is the main component, it exhibits the conductivity of metal oxides. Therefore, when In... X2 Zn Y2 O Z2 or InO X1 When the region that is the main component is distributed in a cloud-like manner in a metal oxide, a high field-effect mobility (μ) can be achieved.

[0198] On the other hand, with GaO X3 The insulation of regions with In as the main component is higher than that of regions with In as the main component. X2 Zn Y2 O Z2 or InO X1 The region where GaO is the main component. In other words, when GaO is used... X3 When regions with these as the main components are distributed in metal oxides, leakage current can be suppressed, thus achieving good switching operation.

[0199] Therefore, when CAC-OS is used in semiconductor devices, it is due to GaO X3 The insulation properties of In and other materials and their causes X2 Zn Y2 O Z2 or InO X1 The complementary effect of their conductivity can achieve high on-state current (I0). on ) and high field-effect mobility (μ).

[0200] Furthermore, semiconductor components using CAC-OS exhibit high reliability. Therefore, CAC-OS is suitable for various semiconductor devices such as displays.

[0201] Because transistors with CAC-OS in the semiconductor layer have high field-effect mobility and high drive energy, using these transistors in drive circuits, typically scan line drive circuits that generate gate signals, can provide display devices with narrow bezels (also known as narrow bezels). Furthermore, by using these transistors in signal line drive circuits that supply signals from signal lines included in the display device (especially demultiplexers connected to the output terminals of shift registers included in the signal line drive circuits), display devices with fewer wiring connections to the display device can be provided.

[0202] Furthermore, transistors with CAC-OS in the semiconductor layer do not require a laser crystallization process, unlike transistors using low-temperature polycrystalline silicon. This reduces manufacturing costs even for display devices using large-area substrates. Moreover, in large-scale display devices with high resolutions such as Ultra High Definition (also known as "4K resolution," "4K2K," or "4K") and Ultra High Definition (also known as "8K resolution," "8K4K," or "8K"), using transistors with CAC-OS in the semiconductor layer for the drive circuitry and display section allows for faster writing and reduces display defects, making it a preferred choice.

[0203] Alternatively, silicon can be used in semiconductors to form channels for transistors. Amorphous silicon can be used as the silicon, but crystalline silicon is particularly preferred. For example, microcrystalline silicon, polycrystalline silicon, and monocrystalline silicon are preferred. In particular, polycrystalline silicon can be formed at lower temperatures than monocrystalline silicon, and its field-effect mobility is higher than that of amorphous silicon, thus polycrystalline silicon has higher reliability.

[0204] The bottom-gate transistor illustrated in this embodiment is preferred because it reduces manufacturing steps. Furthermore, by using amorphous silicon, it can be formed at a lower temperature compared to polycrystalline silicon. Therefore, materials with low heat resistance can be used as materials for wiring or electrodes below the semiconductor layer and as substrate materials, thereby expanding the range of material choices. For example, a very large area glass substrate can be appropriately used. On the other hand, top-gate transistors are preferred because they easily form impurity regions in a self-aligned manner, thereby reducing characteristic inhomogeneities. Polycrystalline silicon or monocrystalline silicon is particularly preferred in this case.

[0205] [Conductive layer] Materials used as conductive layers for the gate, source, and drain of light-shielding transistors, and for various wiring and electrodes constituting display devices, include metals such as aluminum, titanium, chromium, nickel, copper, yttrium, zirconium, molybdenum, silver, tantalum, or tungsten, or alloys with the aforementioned metals as the main component. Furthermore, films containing these materials can be used in single-layer or multi-layer structures. Examples include a single-layer structure of an aluminum film containing silicon; a two-layer structure of an aluminum film stacked on a titanium film; a two-layer structure of an aluminum film stacked on a tungsten film; a two-layer structure of a copper film stacked on a copper-magnesium-aluminum alloy film; a two-layer structure of a copper film stacked on a titanium film; a two-layer structure of a copper film stacked on a tungsten film; a three-layer structure of a titanium film or titanium nitride film, an aluminum film or a copper film, and a titanium film or titanium nitride film stacked sequentially; and a three-layer structure of a molybdenum film or molybdenum nitride film, an aluminum film or a copper film, and a molybdenum film or molybdenum nitride film stacked sequentially. Additionally, oxides such as indium oxide, tin oxide, or zinc oxide can be used. In addition, using copper containing manganese can improve the controllability of the shape during etching, so it is preferred.

[0206] Furthermore, conductive materials that are transparent and can be used as conductive layers for the gate, source, and drain of transparent transistors, as well as for the wiring and electrodes constituting a display device, can include conductive oxides such as indium oxide, indium tin oxide, indium zinc oxide, zinc oxide, and gallium-added zinc oxide, or graphene. Alternatively, metallic materials such as gold, silver, platinum, magnesium, nickel, tungsten, chromium, molybdenum, iron, cobalt, copper, palladium, or titanium, or alloys containing such metallic materials, can be used. Alternatively, nitrides of such metallic materials (e.g., titanium nitride) can also be used. When using metallic materials or alloys (or their nitrides), it is sufficient to form them thin enough to be transparent. Furthermore, a laminate of the above materials can be used as a conductive layer. For example, using a laminate of an alloy of silver and magnesium with indium tin oxide can improve conductivity, and is therefore preferred. The above materials can also be used as conductive layers constituting various wiring and electrodes of a display device, and as conductive layers included in display elements (conductive layers used as pixel electrodes and common electrodes).

[0207] As a conductive material that is transparent to light, oxide semiconductors (oxide conductors (OC)) with low resistance by including impurity elements are preferred.

[0208] [Insulating layer] As insulating materials that can be used in various insulating layers, resins such as acrylic resin or epoxy resin, resins with siloxane bonds, and inorganic insulating materials such as silicon oxide, silicon oxynitride, silicon oxynitride, silicon nitride, or aluminum oxide can be used.

[0209] Examples of insulating films with low water permeability include silicon nitride films, silicon oxynitride films, and other films containing nitrogen and silicon, as well as aluminum nitride films and other films containing nitrogen and aluminum. Additionally, silicon oxide films, silicon oxynitride films, and aluminum oxide films can also be used.

[0210] [Liquid Crystal Components] As a liquid crystal element, a VA (Vertical Alignment) mode element can be used. As a vertical alignment mode, MVA (Multi-Domain Vertical Alignment), PVA (Patterned Vertical Alignment), ASV (Advanced SuperView), etc. can be used.

[0211] Furthermore, various liquid crystal elements using different modes can be employed as liquid crystal elements. For example, in addition to the VA mode, liquid crystal elements using TN (Twisted Nematic), IPS (In-Plane-Switching), FFS (Fringe Field Switching), ASM (Axially Symmetric Aligned Micro-cell), OCB (Optically Compensated Birefringence), FLC (Ferroelectric Liquid Crystal), AFLC (Anti-Ferroelectric Liquid Crystal), ECB (Electrically Controlled Birefringence), and guest-host modes can be used.

[0212] Furthermore, liquid crystal elements are devices that utilize the optical modulation effect of liquid crystals to control the transmission or non-transmission of light. The optical modulation effect of liquid crystals is controlled by an electric field (including transverse, longitudinal, or tilting electric fields) applied to the liquid crystal. Liquid crystals used in liquid crystal elements can be thermotropic liquid crystals, low-molecular-weight liquid crystals, high-molecular-weight liquid crystals, polymer-dispersed liquid crystals (PDLCs), polymer network liquid crystals (PNLCs), ferroelectric liquid crystals, antiferroelectric liquid crystals, etc. These liquid crystal materials exhibit cholesteric, smectic, cubic, chiral nematic, and isotropic phases depending on the conditions.

[0213] In addition, either positive liquid crystal or negative liquid crystal can be used as the liquid crystal material, and the appropriate liquid crystal material can be selected according to the mode or design used.

[0214] Furthermore, an alignment film can be provided to control the alignment of the liquid crystal. When using a lateral electric field, a liquid crystal exhibiting a blue phase can also be used without an alignment film. The blue phase is a type of liquid crystal phase, referring to the phase that appears just before the cholesteric liquid crystal transitions to a homogeneous phase when the temperature is raised. Because the blue phase only appears within a narrow temperature range, a liquid crystal composition containing several wt% or more of a chiral reagent is used in the liquid crystal layer to broaden the temperature range. Liquid crystal compositions containing a blue-phase liquid crystal and a chiral reagent have a fast response speed and are optically isotropic. Moreover, liquid crystal compositions containing a blue-phase liquid crystal and a chiral reagent do not require alignment treatment and have low viewing angle dependence. Additionally, since no alignment film is required and friction treatment is unnecessary, electrostatic damage caused by friction treatment can be prevented, and defects and breakage of the liquid crystal display device during the manufacturing process can be reduced.

[0215] In addition, transmissive liquid crystal elements, reflective liquid crystal elements, or semi-transmissive liquid crystal elements can be used as liquid crystal elements.

[0216] In one aspect of the invention, a transmissive liquid crystal element is particularly preferred.

[0217] When using transmissive or semi-transmissive liquid crystal elements, two polarizers are arranged with a pair of substrates sandwiched between them. A backlight is then positioned outside the polarizers. The backlight can be a direct-lit backlight or an edge-illuminated backlight. Using a direct-lit backlight with LEDs (Light Emitting Diodes) facilitates local dimming, thereby improving contrast, and is therefore preferred. Conversely, using an edge-illuminated backlight allows for a thinner module including the backlight, which is also preferred.

[0218] When the edge-illuminated backlight is turned off, one aspect of the present invention can be used for a transparent display.

[0219] [Shading layer] Examples of materials that can be used for coloring layers include metallic materials, resin materials, and resin materials containing pigments or dyes.

[0220] [Light-shielding layer] Examples of materials suitable for use in the light-shielding layer include carbon black, titanium black, metals, metal oxides, or composite oxides comprising solid solutions of multiple metal oxides. The light-shielding layer can also be a film containing a resin material or a thin film containing inorganic materials such as metals. Alternatively, a laminated film containing a material with a coloring layer can be used for the light-shielding layer. For example, a laminated structure can be used consisting of a film containing a material with a coloring layer for transmitting a certain color of light and a film containing a material with a coloring layer for transmitting other colors of light. By using the same material for the coloring layer and the light-shielding layer, the process can be simplified, in addition to using the same apparatus, making it preferable.

[0221] The above is an explanation of the constituent elements.

[0222] At least a portion of this embodiment can be implemented in combination with other embodiments described in this specification.

[0223] Implementation Method 2 Hereinafter, structural examples of an input device (touch sensor) applicable to a display device according to one aspect of the present invention and an input / output device (touch panel) as an example of a display device according to one aspect of the present invention will be described.

[0224] [Example of a touch sensor structure] The structure of the input device (touch sensor) will now be described with reference to the accompanying drawings.

[0225] Figure 17A A top view schematic diagram of the input device 550 is shown. The input device 550 includes multiple conductive layers 551, multiple conductive layers 552, multiple wirings 555, and multiple wirings 556 on a substrate 560. Additionally, an FPC (Flexible Printed Circuit) 557 electrically connected to each of the multiple conductive layers 551 and multiple conductive layers 552 is disposed on the substrate 560. Figure 17A An example is shown where IC558 is configured on FPC557.

[0226] Figure 17B Show Figure 17A The image shows an enlarged view of the area enclosed by the dotted line. Conductive layer 551 has a shape in which multiple rhomboid electrode patterns are arranged in the transverse direction of the paper. The rhomboid electrode patterns arranged in a row are electrically connected to each other. Conductive layer 552 also has a shape in which multiple rhomboid electrode patterns are arranged in the longitudinal direction of the paper, and the rhomboid electrode patterns arranged in a row are electrically connected to each other. Conductive layers 551 and 552 partially overlap and intersect each other. The intersecting portion is sandwiched with an insulator to prevent short circuit between conductive layers 551 and 552.

[0227] like Figure 17CAs shown, multiple conductive layers 552 with a rhomboid shape can also be formed by connecting conductive layers 553. Island-shaped conductive layers 552 are arranged in a longitudinal direction and are electrically connected to adjacent conductive layers 553. By adopting the above structure, conductive layers 551 and 552 can be formed in one step by processing the same conductive film. This suppresses deviations in the film thickness of these conductive layers, and suppresses deviations in the resistance and light transmittance of each electrode due to their different locations. Here, conductive layer 552 has conductive layer 553, and conductive layer 551 may also have conductive layer 553.

[0228] like Figure 17D As shown, it can also have the function of... Figure 17B The inner side of the rhomboid electrode pattern in the conductive layers 551 and 552 shown is cut out, leaving only the outline shape. In this case, when the width of the conductive layers 551 and 552 is so narrow that the user cannot see them, as described later, the conductive layers 551 and 552 can also be formed using light-shielding materials such as metal or alloys. Additionally, Figure 17D The conductive layer 551 or conductive layer 552 shown may also have the aforementioned conductive layer 553.

[0229] A conductive layer 551 is electrically connected to a wiring 555. Additionally, a conductive layer 552 is electrically connected to a wiring 556. Here, one of the conductive layers 551 and 552 corresponds to the row wiring described above, and the other corresponds to the column wiring described above.

[0230] IC558 has the function of driving a touch sensor. Therefore, the signal output from IC558 is supplied to conductive layer 551 or conductive layer 552 through wiring 555 or wiring 556. In addition, the current (or potential) flowing through conductive layer 551 or conductive layer 552 is input to IC558 through wiring 555 or wiring 556.

[0231] Here, when the touch panel is constructed such that the input device 550 overlaps with the display surface of the display panel, it is preferable to use a light-transmitting conductive material as the conductive layers 551 and 552. Furthermore, when a light-transmitting conductive material is used as the conductive layers 551 and 552, and light from the display panel is extracted through the conductive layers 551 or 552, it is preferable to place a conductive film containing the same conductive material as a dummy pattern between the conductive layers 551 and 552. In this way, by filling a portion of the gap between the conductive layers 551 and 552 with a dummy pattern, deviations in light transmittance can be reduced. As a result, brightness deviations of the light transmitted through the input device 550 can be reduced.

[0232] As a transparent conductive material, conductive oxides such as indium oxide, indium tin oxide, indium zinc oxide, zinc oxide, and gallium-added zinc oxide can be used. Alternatively, graphene-containing films can also be used. Graphene-containing films can be formed, for example, by reducing a film containing graphene oxide. Reduction methods can include heating.

[0233] Alternatively, metals or alloys thinned to a light-transmitting thickness can be used. For example, metals such as gold, silver, platinum, magnesium, nickel, tungsten, chromium, molybdenum, iron, cobalt, copper, palladium, or titanium, or alloys containing such metals, can be used. Alternatively, nitrides of the metal or alloy (e.g., titanium nitride) can also be used. Furthermore, two or more laminated conductive films containing the aforementioned materials can be used.

[0234] Furthermore, conductive layers 551 and 552 can also be made of conductive films that are so fine that they are invisible to the user. For example, by processing such conductive films into a grid pattern (mesh pattern), both high conductivity and high visibility of the display device can be achieved. In this case, it is preferable that the conductive film has a width of 30 nm or more and 100 μm or less, preferably 50 nm or more and 50 μm or less, and more preferably 50 nm or more and 20 μm or less. In particular, conductive films with a pattern width of 10 μm or less are difficult for the user to see, and are therefore preferred.

[0235] exist Figures 18A to 18D The diagram below illustrates, as an example, a portion of the conductive layer 551 or a portion of the conductive layer 552 magnified. Figure 18A An example is shown using a grid-shaped conductive film 546. In this case, by arranging the conductive film 546 in such a way that the display elements included in the display device do not overlap with the conductive film 546, light from the display elements is not blocked, which is preferable. In this case, it is preferable that the direction of the grid is consistent with the arrangement direction of the display elements, and that the period of the grid is an integer multiple of the period of the arrangement of the display elements.

[0236] Figure 18B An example is shown of a lattice-shaped conductive film 547 processed in a manner forming triangular openings. By employing the above structure, with Figure 18A In comparison, resistance can be further reduced.

[0237] like Figure 18C As shown, a conductive film 548 with a non-periodic pattern shape can also be used. By adopting the above structure, moiré patterns generated when overlapping with the display section of the display device can be suppressed.

[0238] Conductive nanowires can also be used as conductive layers 551 and 552. Figure 18DAn example using nanowires 549 is shown. By dispersing the nanowires 549 at an appropriate density so that adjacent nanowires 549 are in contact with each other, a two-dimensional network is formed, which can be used as a conductive film with extremely high light transmittance. For example, nanowires with an average diameter of 1 nm or more and 100 nm or less, preferably 5 nm or more and 50 nm or less, and more preferably 5 nm or more and 25 nm or less can be used. As nanowires 549, metal nanowires such as Ag nanowires, Cu nanowires, and Al nanowires, or carbon nanotubes, can be used. For example, when Ag nanowires are used, a light transmittance of 89% or more and a thin film resistance of 40 Ω / □ or more and 100 Ω / □ or less can be achieved.

[0239] The above is an explanation of the structure of a touch sensor.

[0240] [Structure Example of a Touch Panel] There are no particular limitations on the detection elements (also called sensor elements) included in the touch panel of one embodiment of the present invention. Various sensors capable of detecting the proximity or contact of a detection object such as a finger or stylus can also be used as detection elements.

[0241] For example, various methods can be used as sensors, such as electrostatic capacitive, resistive film, surface acoustic wave, infrared, optical, and pressure-sensitive types.

[0242] In this embodiment, a touch panel including an electrostatic capacitive sensing element will be used as an example for explanation.

[0243] As electrostatic capacitive types, there are surface-type electrostatic capacitive types and projection-type electrostatic capacitive types. Furthermore, projection-type electrostatic capacitive types include self-capacitance types and mutual-capacitance types. When using a mutual-capacitance type, multiple points can be detected simultaneously, making it the preferred choice.

[0244] The touch panel of one aspect of the present invention can adopt various structures such as a structure in which a display device and a detection element are bonded together, or a structure in which electrodes constituting the detection element are provided on one or both of the substrate supporting the display element and the opposing substrate.

[0245] [Structure Example] Figure 19A This is a perspective view of a touch panel 420A according to one aspect of the present invention. Figure 19B It is Figure 19A Perspective diagram when unfolded. Note that, for clarity, Figure 19A and Figure 19B Only typical constituent elements are shown. Additionally, in Figure 19B In the diagram, only a portion of the constituent elements (substrate 430, substrate 472, etc.) are shown in outline using dashed lines.

[0246] The touch panel 420A includes an input device 410 and a display device 470 arranged in an overlapping manner. Therefore, the touch panel 420A can be referred to as an Out-Cell type touch panel.

[0247] As the display device 470, the display device shown in Embodiment 1 can be used. Therefore, the touch panel 420A is a touch panel with an extremely high aperture ratio and low power consumption.

[0248] The input device 410 includes a substrate 430, electrodes 431 and 432, a plurality of wirings 441 and a plurality of wirings 442. The FPC 450 is electrically connected to the plurality of wirings 441 and 442. An IC 451 is disposed on the FPC 450.

[0249] The display device 470 includes substrates 471 and 472, which are arranged opposite to each other. The display device 470 includes a display section 481 and a driving circuit section 482. Wiring 407 and the like are provided on substrate 471. An FPC 473 is electrically connected to wiring 407. An IC 474 is provided on the FPC 473.

[0250] because Figure 19A The touch panel 420 shown is equipped with FPC473, IC474, FPC450 and IC451, so it can be called a touch panel module.

[0251] At least a portion of this embodiment can be implemented in combination with other embodiments described in this specification.

[0252] Implementation Method 3 Preferably, transistors with extremely low off-state current, using oxide semiconductors, are used in the pixel circuits that drive the liquid crystal elements. Alternatively, memory elements can also be used in the pixel circuits described above. Therefore, even when writing to the pixels is stopped while displaying a static image using the liquid crystal elements, grayscale can be maintained. That is, display can be maintained even at extremely low frame rates. As a result, displays with extremely low power consumption can be achieved.

[0253] The following is for reference Figures 20A to 20C This describes the operating modes that can be achieved using liquid crystal elements.

[0254] The following examples illustrate the normal operating mode, which operates at a typical frame rate (typically above 30Hz and below 240Hz or above 60Hz and below 240Hz), and the idling stop (IDS) drive mode, which operates at a low frame rate.

[0255] Idle Stop (IDS) drive mode refers to a drive method that stops rewriting image data after the image data writing process has been completed. By extending the interval between one image data write and the next image data write, the power consumption required for writing image data during this period can be saved. The frame rate of Idle Stop (IDS) drive mode can be, for example, about 1 / 100 to 1 / 10 of the normal operating mode.

[0256] Figure 20A , Figure 20B and Figure 20C This is a circuit diagram and timing diagram illustrating the normal drive mode and the idle stop (IDS) drive mode. Figure 20A The image shows a liquid crystal element 601 (here, a transmissive liquid crystal element) and a pixel circuit 606 electrically connected to the liquid crystal element 601. Figure 20A The pixel circuit 606 shown includes a signal line SL, a gate line GL, a transistor M1 connected to the signal line SL and the gate line GL, and a capacitor Cs connected to the transistor M1. LC .

[0257] As transistor M1, a transistor comprising a metal oxide in the semiconductor layer is preferably used. When the transistor comprising a metal oxide has at least one of amplification, rectification, and switching functions, the metal oxide can be called a metal oxide semiconductor or oxide semiconductor, or simply OS. Hereinafter, as a typical example of a transistor, a transistor comprising an oxide semiconductor (OS transistor) will be used for explanation. Because the leakage current (off-state current) of an OS transistor is extremely low in the non-conducting state, charge can be maintained in the pixel electrode of the liquid crystal element by keeping the OS transistor in the non-conducting state.

[0258] exist Figure 20A In the circuit diagram shown, the liquid crystal element LC is the leakage path for data D1. Therefore, to properly perform the idle stop drive, it is preferable to set the resistivity of the liquid crystal element LC to 1.0 × 10⁻⁶. 14 Ω∙cm or more.

[0259] For example, In-Ga-Zn oxides, In-Zn oxides, etc., can be applied to the channel region of the aforementioned OS transistor. The composition of the aforementioned In-Ga-Zn oxides is typically around In:Ga:Zn = 1:1:1 [atomic ratio] or around In:Ga:Zn = 4:2:3 [atomic ratio].

[0260] Figure 20BThis is a timing diagram showing the waveforms of the signals supplied to the signal line SL and the gate line GL respectively during normal drive mode. In normal drive mode, it operates at a normal frame rate (e.g., 60Hz). Figure 20B The periods T1 to T3 are shown. During each frame period, a scan signal is supplied to the gate line GL to write data D1 from the signal line SL. This operation is performed regardless of whether the same data D1 is written or different data is written during periods T1 to T3.

[0261] on the other hand, Figure 20C This is a timing diagram showing the waveforms of the signals supplied to signal line SL and gate line GL in Idle Stop (IDS) drive mode. In Idle Stop (IDS) drive, operation is performed at a low frame rate (e.g., below 1 Hz). A frame period is represented by period T1, where period T... W Indicates the period during which data is written, expressed as period T. RET Indicates the data hold period. In Idle Stop (IDS) drive mode, during the period T W A scan signal is supplied to gate line GL, and data D1 from signal line SL is written to the pixel during the period T. RET By fixing the gate line GL to a low level voltage, transistor M1 is de-conducted to retain the written data D1 in the pixel. Low frame rates can be, for example, 0.1Hz or higher than 60Hz or 0.1Hz or higher than 30Hz.

[0262] At least a portion of this embodiment can be implemented in combination with other embodiments described in this specification.

[0263] Implementation Method 4 In this embodiment, a display module that can be manufactured using one method of the present invention is described.

[0264] Figure 21A The display module 6000 shown includes a display panel 6006, a frame 6009, a printed circuit board 6010, and a battery 6011 connected to an FPC 6005, located between an upper cover 6001 and a lower cover 6002.

[0265] For example, a display device manufactured using one method of the present invention can be used in display panel 6006. Display panel 6006 may include a polarizer and a backlight. This allows for a display module with extremely low power consumption.

[0266] The upper cover 6001 and the lower cover 6002 can be appropriately changed in shape or size according to the size of the display panel 6006.

[0267] Alternatively, the touch panel can be arranged to overlap with the display panel 6006. The touch panel can be a resistive film touch panel or a capacitive touch panel, and can be formed to overlap with the display panel 6006. Alternatively, the display panel 6006 can have the functionality of a touch panel without a separate touch panel.

[0268] In addition to protecting the display panel 6006, the frame 6009 also serves as electromagnetic shielding to block electromagnetic waves generated by the operation of the printed circuit board 6010. Furthermore, the frame 6009 can also function as a heat sink.

[0269] The printed circuit board 6010 includes a power supply circuit and a signal processing circuit for outputting video and clock signals. The power supply circuit can be powered by an external commercial power supply or by a separately provided battery 6011. When using a commercial power supply, the battery 6011 can be omitted.

[0270] Figure 21B This is a cross-sectional schematic diagram of the display module 6000, which includes an optical touch sensor.

[0271] The display module 6000 includes a light-emitting part 6015 and a light-receiving part 6016 disposed on a printed circuit board 6010. In addition, a pair of light guides (light guide 6017a and light guide 6017b) are included in the area surrounded by the upper cover 6001 and the lower cover 6002.

[0272] The upper cover 6001 and the lower cover 6002 can be made of materials such as plastic. Furthermore, the thickness of the upper cover 6001 and the lower cover 6002 can be reduced (e.g., by more than 0.5 mm and less than 5 mm). This allows the display module 6000 to be extremely lightweight. Moreover, since less material can be used to form the upper cover 6001 and the lower cover 6002, manufacturing costs can be reduced.

[0273] The display panel 6006 is disposed over the frame 6009 in a manner that overlaps with the printed circuit board 6010 and the battery 6011. The display panel 6006 and the frame 6009 are fixed to the light guide portion 6017a and the light guide portion 6017b.

[0274] The light 6018 emitted from the light-emitting unit 6015 passes through the light guide 6017a, over the upper part of the display panel 6006, and reaches the light-receiving unit 6016 through the light guide 6017b. For example, when the light 6018 is blocked by a detection object such as a finger or stylus, a touch operation can be detected.

[0275] Multiple light-emitting units 6015 are arranged, for example, along two adjacent edges of the display panel 6006. Multiple light-receiving units 6016 are arranged opposite to the light-emitting units 6015. Thus, information about the location of a touch operation can be obtained.

[0276] The light-emitting part 6015 can be a light source such as an LED element. In particular, the light-emitting part 6015 is preferably a light source that emits infrared light that is invisible to the user and is harmless to the user.

[0277] The light-receiving part 6016 can be a photoelectric element that receives light emitted by the light-emitting part 6015 and converts it into an electrical signal. A photodiode capable of receiving infrared light is preferred.

[0278] The light guides 6017a and 6017b can be components that transmit at least light 6018. By using the light guides 6017a and 6017b, the light-emitting part 6015 and the light-receiving part 6016 can be positioned on the underside of the display panel 6006, which can suppress external light from reaching the light-receiving part 6016 and causing malfunctions of the touch sensor. A resin that absorbs visible light and transmits infrared light is particularly preferred. This further effectively suppresses malfunctions of the touch sensor.

[0279] At least a portion of this embodiment can be implemented in combination with other embodiments described in this specification.

[0280] Implementation Method 5 In this embodiment, an electronic device for display devices to which one aspect of the present invention can be applied is described.

[0281] One aspect of the display device of the present invention enables a bright display with high visibility regardless of the intensity of external light. Another aspect of the display device of the present invention enables low power consumption. Therefore, it can be appropriately applied to portable electronic devices, wearable electronic devices, e-book readers, television devices, digital signage, etc.

[0282] Figure 22A and Figure 22B An example of a portable information terminal 800 is shown. The portable information terminal 800 includes a housing 801, a housing 802, a display unit 803, a display unit 804, and a hinge unit 805, etc.

[0283] Housing 801 and housing 802 are connected together via hinge 805. The portable information terminal 800 can be accessed from... Figure 22A The folded state shown is transformed into Figure 22B The shells 801 and 802 are shown in their unfolded state.

[0284] For example, document information can be displayed on display units 803 and 804, thereby enabling the portable information terminal to be used as an e-book reader. Additionally, still images or moving images can also be displayed on display units 803 and 804.

[0285] Thus, the portable information terminal 800 can be folded when carried, making it highly versatile.

[0286] Additionally, housings 801 and 802 may also include a power button, operation button, external connection port, speaker, microphone, etc.

[0287] Figure 22C An example of a portable information terminal is shown. Figure 22C The portable information terminal 810 shown includes a housing 811, a display unit 812, operation buttons 813, an external connection port 814, a speaker 815, a microphone 816, a camera 817, etc.

[0288] The display unit 812 includes a display device according to one aspect of the present invention.

[0289] The portable information terminal 810 includes a touch sensor in its display unit 812. Various operations, such as making phone calls or inputting text, can be performed by touching the display unit 812 with a finger or stylus.

[0290] Additionally, by operating button 813, the power can be switched on / off, or the types of images displayed on display unit 812 can be changed. For example, the email composing screen can be switched to the main menu screen.

[0291] Furthermore, by incorporating a gyroscope sensor or accelerometer sensor within the portable information terminal 810, the orientation (vertical or horizontal) of the portable information terminal 810 can be determined, and the display orientation of the display unit 812 can be automatically switched. Additionally, switching the display orientation can also be done by touching the display unit 812, operating the operation button 813, or inputting sound using the microphone 816.

[0292] The portable information terminal 810 has one or more functions selected from telephones, laptops, and information reading devices. Specifically, the portable information terminal 810 can be used as a smartphone. The portable information terminal 810 can, for example, execute various applications such as mobile phone use, email, article reading and editing, music playback, animation playback, internet communication, and computer games.

[0293] Figure 22DAn example of a camera is shown. Camera 820 includes a housing 821, a display unit 822, operation buttons 823, a shutter button 824, etc. Additionally, camera 820 is equipped with a detachable lens 826.

[0294] The display unit 822 includes a display device according to one aspect of the present invention.

[0295] Here, although the camera 820 has a structure that allows the lens 826 to be detached from the housing 821 and exchanged, the lens 826 and the housing can also be formed as one piece.

[0296] By pressing the shutter button 824, the camera 820 can capture still images or moving images. Alternatively, the display unit 822 can be equipped with a touch panel function, allowing video recording via touch of the display unit 822.

[0297] In addition, the camera 820 may also have a separately mounted flash unit and viewfinder, etc. Furthermore, these components can also be assembled into the housing 821.

[0298] Figure 23A A television device 830 is shown. The television device 830 includes a display unit 831, a housing 832, a speaker 833, etc. It may also include LED lights, operation buttons (including a power switch or operation switch), connection terminals, various sensors, and a microphone, etc.

[0299] The television device 830 can be operated using the remote control 834.

[0300] The broadcast waves that the television device 830 can receive include terrestrial waves and satellite-transmitted waves. Furthermore, broadcast waves can be analog broadcasts, digital broadcasts, or broadcasts containing both video and sound, or only sound. For example, it can receive broadcast waves transmitted in a specified frequency band within the UHF band (approximately 300MHz to 3GHz) or the VHF band (30MHz to 300MHz).

[0301] For example, by using multiple data received in multiple frequency bands, the television device 830 can increase the transmission rate, thereby obtaining more information. As a result, images with resolutions exceeding Full HD can be displayed on the display unit 831. For example, images with resolutions of 4K2K, 8K4K, 16K8K, or higher can be displayed.

[0302] Alternatively, the television device 830 may also employ a structure in which broadcast data is used to generate images displayed on the display unit 831, and this broadcast data is transmitted using data transmission technologies such as the Internet, LAN (Local Area Network), and Wi-Fi. In this case, the television device 830 may also omit the tuner.

[0303] Figure 23B A digital sign 840 is shown, which is mounted on a cylindrical column 842. The digital sign 840 includes a display unit 841.

[0304] The larger the display section 841, the more information the display device can provide at once. A larger display section 841 is more likely to attract attention, for example, it can improve the effectiveness of advertising.

[0305] By using a touch panel for the display unit 841, not only can static or dynamic images be displayed on the display unit 841, but users can also operate it intuitively, which is therefore preferred. Furthermore, when used to provide information such as route information or traffic information, intuitive operation improves ease of use.

[0306] Figure 23C A notebook computer 850 is shown. The personal computer 850 includes a display unit 851, a casing 852, a touchpad 853, and a connection port 854, etc.

[0307] The touchpad 853 is used as an input unit for pointing devices or digitizing tablets, and can be operated using fingers or styluses.

[0308] The touchpad 853 is equipped with display elements. For example... Figure 23C As shown, by displaying input keys 855 on the surface of the touchpad 853, the touchpad 853 can be used as a keyboard. In this case, in order to reproduce the tactile sensation by using vibration when touching the input keys 855, a vibration module can also be assembled in the touchpad 853.

[0309] At least a portion of this embodiment can be implemented in combination with other embodiments described in this specification.

[0310] Symbol Explanation 10 Display devices 11 Substrate 12 Substrates 13 Display Section 13B Display Area 13G display area 13R display area 14 Circuits 15. Wiring 16 FPC 17 IC 20 Liquid Crystal Components 20B Liquid Crystal Element 20G LCD element 20R LCD element 21 Conductive layer 22 LCD 23 Conductive layer 24a Orientation Film 24b orientation film 25B light 25G optical 25R light 26 Insulation layer 30 transistors 30B transistor 30G transistors 30R transistor 31 Conductive layer 31a Conductive layer 32 Semiconductor Layer 32a Low resistance region 33 Conductive layer 34 Insulation layer 39a Polarizing filter 39b Polarizing filter 40 pixels 40B subpixel 40G subpixels 40R subpixel 40W subpixels 40s shaded area 40t through area 40U pixel unit 41B shaded layer 41G shader layer 41R shader layer 42. Light-shielding layer 51. Wiring 51a wiring 51b wiring 51B wiring 51G cabling 51R cabling 52 Wiring 52a wiring 52b wiring 52B wiring 52G cabling 52R cabling 53 Wiring 55 Intersection 57. Light-shielding layer 58. Light-shielding layer 60 capacitor 60B capacitor 60G capacitor 60R capacitor 81 Insulation layer 82 Insulation layer 83 Insulation layer 90 backlight units 407 wiring 410 Input Device 420 Touch Panel 420A Touch Panel 430 substrate 431 electrode 432 electrode 441 Wiring 442 wiring 450 FPC 451 IC 470 display device 471 substrate 472 substrate 473 FPC 474 IC 481 Display Department 482 Drive Circuit Section 546 Conductive Film 547 Conductive Film 548 conductive film 549 nanowires 550 Input Device 551 conductive layer 552 conductive layer 553 conductive layer 555 wiring 556 wiring 557 FPC 558 IC 560 substrate 601 Liquid Crystal Component 606-pixel circuit 800 Portable Information Terminal 801 casing 802 casing 803 Display Section 804 Display Section 805 Hinge 810 Portable Information Terminal 811 casing 812 Display Section 813 Operation Buttons 814 External connection port 815 speaker 816 microphone 817 Camera 820 camera 821 casing 822 Display Section 823 Operation Button 824 shutter button 826 lens 830 Television Unit 831 Display Section 832 casing 833 loudspeaker 834 Remote Control Operator 840 Digital Signage 841 Display Department 842 pillars 850 personal computers 851 Display Section 852 casing 853 Touchscreen 854 connection port 855 Input Key 6000 Display Module 6001 Top Cover 6002 bottom cover 6005 FPC 6006 Display Panel 6009 Framework 6010 Printed Circuit Board 6011 battery 6015 Light-emitting part 6016 Light-receiving section 6017a Light Guide Section 6017b Light Guide Section 6018 Light

Claims

1. A display device, comprising: A first coloring layer, a second coloring layer, a third coloring layer, a first transistor, a second transistor, a third transistor, a first display element, a second display element, and a third display element. The first display element is electrically connected to the first transistor. The first display element has an area that overlaps with the first coloring layer. The second display element is electrically connected to the second transistor. The second display element has an area that overlaps with the second coloring layer. The third display element is electrically connected to the third transistor. The third display element has an area that overlaps with the third coloring layer. The second coloring layer has a region sandwiched between the first coloring layer and the third coloring layer; The display device further includes: A first semiconductor layer having the channel formation region of the first transistor, A first conductive layer having a region overlapping with the first semiconductor layer. The second conductive layer is electrically connected to the first semiconductor layer. The third conductive layer is electrically connected to the first semiconductor layer. The second semiconductor layer having the channel formation region of the second transistor, A third semiconductor layer having the channel formation region of the third transistor; The first semiconductor layer has a region that overlaps with the second coloring layer. The third semiconductor layer has a region that overlaps with the second coloring layer. The first conductive layer has a first region that does not overlap with the first semiconductor layer and extends along a first direction. The first region has an area that overlaps with the second coloring layer. The second conductive layer has a second region extending along a second direction. The second region has a region that overlaps with the second coloring layer and a region that does not overlap with the second coloring layer. The third conductive layer has a third region extending along a third direction intersecting the second direction. The third region has an area that does not overlap with the second coloring layer. The second coloring layer having a region overlapping with the second display element, the second coloring layer having a region overlapping with the first semiconductor layer, the second coloring layer having a region overlapping with the third semiconductor layer, the second coloring layer having a region overlapping with the first region, and the second coloring layer having a region overlapping with the second region are interconnected.

2. A display device, comprising: Substrate, The substrate contains a first coloring layer, a second coloring layer, a third coloring layer, a first transistor, a second transistor, a third transistor, a first display element, a second display element, and a third display element. The first display element is electrically connected to the first transistor. The first display element has an area that overlaps with the first coloring layer. The second display element is electrically connected to the second transistor. The second display element has an area that overlaps with the second coloring layer. The third display element is electrically connected to the third transistor. The third display element has an area that overlaps with the third coloring layer. The second coloring layer has a region sandwiched between the first coloring layer and the third coloring layer; The display device further includes: A first semiconductor layer having the channel formation region of the first transistor, A first conductive layer having a region overlapping with the first semiconductor layer. The second conductive layer is electrically connected to the first semiconductor layer. The third conductive layer is electrically connected to the first semiconductor layer. The second semiconductor layer having the channel formation region of the second transistor, A third semiconductor layer having the channel formation region of the third transistor; The first semiconductor layer has a region that overlaps with the second coloring layer. The third semiconductor layer has a region that overlaps with the second coloring layer. The first conductive layer has a first region that does not overlap with the first semiconductor layer and extends along a first direction. The first region has an area that overlaps with the second coloring layer. The second conductive layer has a second region extending along a second direction. The second region has a region that overlaps with the second coloring layer and a region that does not overlap with the second coloring layer. The third conductive layer has a third region extending along a third direction intersecting the second direction. The third region has an area that does not overlap with the second coloring layer. The first coloring layer, the second coloring layer, and the third coloring layer are disposed on the substrate side. The second coloring layer having a region overlapping with the second display element, the second coloring layer having a region overlapping with the first semiconductor layer, the second coloring layer having a region overlapping with the third semiconductor layer, the second coloring layer having a region overlapping with the first region, and the second coloring layer having a region overlapping with the second region are interconnected.

3. A display device, comprising: Substrate, The substrate contains a first coloring layer, a second coloring layer, a third coloring layer, a first transistor, a second transistor, a third transistor, a first display element, a second display element, and a third display element. The first display element is electrically connected to the first transistor. The first display element has an area that overlaps with the first coloring layer. The second display element is electrically connected to the second transistor. The second display element has an area that overlaps with the second coloring layer. The third display element is electrically connected to the third transistor. The third display element has an area that overlaps with the third coloring layer. The second coloring layer has a region sandwiched between the first coloring layer and the third coloring layer; The display device further includes: A first semiconductor layer having the channel formation region of the first transistor, A first conductive layer having a region overlapping with the first semiconductor layer. The second conductive layer is electrically connected to the first semiconductor layer. The third conductive layer is electrically connected to the first semiconductor layer. The second semiconductor layer having the channel formation region of the second transistor, A third semiconductor layer having the channel formation region of the third transistor; The first semiconductor layer has a region that overlaps with the second coloring layer. The third semiconductor layer has a region that overlaps with the second coloring layer. The first conductive layer has a first region that does not overlap with the first semiconductor layer and extends along a first direction. The first region has an area that overlaps with the second coloring layer. The second conductive layer has a second region extending along a second direction. The second region has a region that overlaps with the second coloring layer and a region that does not overlap with the second coloring layer. The third conductive layer has a third region extending along a third direction intersecting the second direction. The third region has an area that does not overlap with the second coloring layer. The second coloring layer has a region disposed on the first semiconductor layer. The second display element has an area disposed in the second coloring layer. The second coloring layer having a region overlapping with the second display element, the second coloring layer having a region overlapping with the first semiconductor layer, the second coloring layer having a region overlapping with the third semiconductor layer, the second coloring layer having a region overlapping with the first region, and the second coloring layer having a region overlapping with the second region are interconnected.

4. A display device, comprising: First color layer, second color layer, third color layer, first transistor, second transistor, third transistor, first pixel electrode, second pixel electrode, and third pixel electrode. The first pixel electrode is electrically connected to the first transistor. The first pixel electrode has a region that overlaps with the first coloring layer. The second pixel electrode is electrically connected to the second transistor. The second pixel electrode has a region that overlaps with the second coloring layer. The third pixel electrode is electrically connected to the third transistor. The third pixel electrode has a region that overlaps with the third color layer. The second coloring layer has a region sandwiched between the first coloring layer and the third coloring layer; The display device further includes: A first semiconductor layer having the channel formation region of the first transistor, A first conductive layer having a region overlapping with the first semiconductor layer. The second conductive layer is electrically connected to the first semiconductor layer. The third conductive layer is electrically connected to the first semiconductor layer. The second semiconductor layer having the channel formation region of the second transistor, A third semiconductor layer having the channel formation region of the third transistor; The first semiconductor layer has a region that overlaps with the second coloring layer. The third semiconductor layer has a region that overlaps with the second coloring layer. The first conductive layer has a first region that does not overlap with the first semiconductor layer and extends along a first direction. The first region has an area that overlaps with the second coloring layer. The second conductive layer has a second region extending along a second direction. The second region has a region that overlaps with the second coloring layer and a region that does not overlap with the second coloring layer. The third conductive layer has a third region extending along a third direction intersecting the second direction. The third region has an area that does not overlap with the second coloring layer. The second coloring layer having a region overlapping with the second pixel electrode, the second coloring layer having a region overlapping with the first semiconductor layer, the second coloring layer having a region overlapping with the third semiconductor layer, the second coloring layer having a region overlapping with the first region, and the second coloring layer having a region overlapping with the second region are interconnected.

5. A display device, comprising: Substrate, The substrate contains a first coloring layer, a second coloring layer, a third coloring layer, a first transistor, a second transistor, a third transistor, a first pixel electrode, a second pixel electrode, and a third pixel electrode. The first pixel electrode is electrically connected to the first transistor. The first pixel electrode has a region that overlaps with the first coloring layer. The second pixel electrode is electrically connected to the second transistor. The second pixel electrode has a region that overlaps with the second coloring layer. The third pixel electrode is electrically connected to the third transistor. The third pixel electrode has a region that overlaps with the third color layer. The second coloring layer has a region sandwiched between the first coloring layer and the third coloring layer; The display device further includes: A first semiconductor layer having the channel formation region of the first transistor, A first conductive layer having a region overlapping with the first semiconductor layer. The second conductive layer is electrically connected to the first semiconductor layer. The third conductive layer is electrically connected to the first semiconductor layer. The second semiconductor layer having the channel formation region of the second transistor, A third semiconductor layer having the channel formation region of the third transistor; The first semiconductor layer has a region that overlaps with the second coloring layer. The third semiconductor layer has a region that overlaps with the second coloring layer. The first conductive layer has a first region that does not overlap with the first semiconductor layer and extends along a first direction. The first region has an area that overlaps with the second coloring layer. The second conductive layer has a second region extending along a second direction. The second region has a region that overlaps with the second coloring layer and a region that does not overlap with the second coloring layer. The third conductive layer has a third region extending along a third direction intersecting the second direction. The third region has an area that does not overlap with the second coloring layer. The first coloring layer, the second coloring layer, and the third coloring layer are disposed on the substrate side. The second coloring layer having a region overlapping with the second pixel electrode, the second coloring layer having a region overlapping with the first semiconductor layer, the second coloring layer having a region overlapping with the third semiconductor layer, the second coloring layer having a region overlapping with the first region, and the second coloring layer having a region overlapping with the second region are interconnected.

6. A display device, comprising: Substrate, The substrate contains a first coloring layer, a second coloring layer, a third coloring layer, a first transistor, a second transistor, a third transistor, a first pixel electrode, a second pixel electrode, and a third pixel electrode. The first pixel electrode is electrically connected to the first transistor. The first pixel electrode has a region that overlaps with the first coloring layer. The second pixel electrode is electrically connected to the second transistor. The second pixel electrode has a region that overlaps with the second coloring layer. The third pixel electrode is electrically connected to the third transistor. The third pixel electrode has a region that overlaps with the third color layer. The second coloring layer has a region sandwiched between the first coloring layer and the third coloring layer; The display device further includes: A first semiconductor layer having the channel formation region of the first transistor, A first conductive layer having a region overlapping with the first semiconductor layer. The second conductive layer is electrically connected to the first semiconductor layer. The third conductive layer is electrically connected to the first semiconductor layer. The second semiconductor layer having the channel formation region of the second transistor, A third semiconductor layer having the channel formation region of the third transistor; The first semiconductor layer has a region that overlaps with the second coloring layer. The third semiconductor layer has a region that overlaps with the second coloring layer. The first conductive layer has a first region that does not overlap with the first semiconductor layer and extends along a first direction. The first region has an area that overlaps with the second coloring layer. The second conductive layer has a second region extending along a second direction. The second region has a region that overlaps with the second coloring layer and a region that does not overlap with the second coloring layer. The third conductive layer has a third region extending along a third direction intersecting the second direction. The third region has an area that does not overlap with the second coloring layer. The second coloring layer has a region disposed on the first semiconductor layer. The second pixel electrode has a region disposed on the second color layer. The second coloring layer having a region overlapping with the second pixel electrode, the second coloring layer having a region overlapping with the first semiconductor layer, the second coloring layer having a region overlapping with the third semiconductor layer, the second coloring layer having a region overlapping with the first region, and the second coloring layer having a region overlapping with the second region are interconnected.

7. The display device according to any one of claims 1 to 6, wherein, The first semiconductor layer, the second semiconductor layer and the third semiconductor layer are respectively oxide semiconductors.

8. The display device according to any one of claims 1 to 6, wherein, The second direction is the direction that intersects with the first direction.

9. A display device, comprising: A first coloring layer, a second coloring layer, a first transistor having a first semiconductor layer, a second transistor having a second semiconductor layer, a first display element, a second display element, a first capacitor electrically connected to the first display element, and a second capacitor electrically connected to the second display element. The first capacitor and the first display element are respectively electrically connected to the first transistor. The first display element has an area that overlaps with the first coloring layer. The second capacitor and the second display element are respectively electrically connected to the second transistor. The second display element has an area that overlaps with the second coloring layer; The display device further includes: A first conductive layer having a first region overlapping the first semiconductor layer and a second region not overlapping the first semiconductor layer and extending along a first direction. A second conductive layer electrically connected to the first semiconductor layer and having a third region extending along a second direction intersecting the first direction. A third conductive layer is electrically connected to the first semiconductor layer and has a fourth region extending in the same direction as the first direction, i.e., the third direction. The first semiconductor layer has a region that overlaps with the second coloring layer. The second region has an area that overlaps with the second coloring layer. The third region has a region that overlaps with the second coloring layer and a region that does not overlap with the second coloring layer. The fourth region has an area that does not overlap with the second coloring layer. The second coloring layer having a region overlapping with the second display element, the second coloring layer having a region overlapping with the first semiconductor layer, the second coloring layer having a region overlapping with the second region, and the second coloring layer having a region overlapping with the third region are interconnected.

10. A display device, comprising: Substrate, The substrate includes a first coloring layer, a second coloring layer, a first transistor having a first semiconductor layer, a second transistor having a second semiconductor layer, a first display element, a second display element, a first capacitor electrically connected to the first display element, and a second capacitor electrically connected to the second display element. The first capacitor and the first display element are respectively electrically connected to the first transistor. The first display element has an area that overlaps with the first coloring layer. The second capacitor and the second display element are respectively electrically connected to the second transistor. The second display element has an area that overlaps with the second coloring layer; The display device further includes: A first conductive layer having a first region overlapping the first semiconductor layer and a second region not overlapping the first semiconductor layer and extending along a first direction. A second conductive layer electrically connected to the first semiconductor layer and having a third region extending along a second direction intersecting the first direction. A third conductive layer is electrically connected to the first semiconductor layer and has a fourth region extending in the same direction as the first direction, i.e., the third direction. The first semiconductor layer has a region that overlaps with the second coloring layer. The second region has an area that overlaps with the second coloring layer. The third region has a region that overlaps with the second coloring layer and a region that does not overlap with the second coloring layer. The fourth region has an area that does not overlap with the second coloring layer. The first coloring layer and the second coloring layer are disposed on the substrate side. The second coloring layer having a region overlapping with the second display element, the second coloring layer having a region overlapping with the first semiconductor layer, the second coloring layer having a region overlapping with the second region, and the second coloring layer having a region overlapping with the third region are interconnected.

11. A display device, comprising: A first coloring layer, a second coloring layer, a first transistor having a first semiconductor layer, a second transistor having a second semiconductor layer, a first display element, a second display element, a first capacitor electrically connected to the first display element, and a second capacitor electrically connected to the second display element. The first capacitor and the first display element are respectively electrically connected to the first transistor. The first display element has an area that overlaps with the first coloring layer. The second capacitor and the second display element are respectively electrically connected to the second transistor. The second display element has an area that overlaps with the second coloring layer; The display device further includes: A first conductive layer having a first region overlapping the first semiconductor layer and a second region not overlapping the first semiconductor layer and extending along a first direction. A second conductive layer electrically connected to the first semiconductor layer and having a third region extending along a second direction intersecting the first direction. A third conductive layer is electrically connected to the first semiconductor layer and has a fourth region extending in the same direction as the first direction, i.e., the third direction. The first semiconductor layer has a region that overlaps with the second coloring layer. The second region has an area that overlaps with the second coloring layer. The third region has a region that overlaps with the second coloring layer and a region that does not overlap with the second coloring layer. The fourth region has an area that does not overlap with the second coloring layer. The second coloring layer has a region disposed on the first semiconductor layer. The second display element has an area disposed on the second coloring layer. The second coloring layer having a region overlapping with the second display element, the second coloring layer having a region overlapping with the first semiconductor layer, the second coloring layer having a region overlapping with the second region, and the second coloring layer having a region overlapping with the third region are interconnected.

12. The display device according to any one of claims 9 to 11, wherein, The first semiconductor layer and the second semiconductor layer are respectively oxide semiconductors.

13. A display device, comprising: First sub-pixel, second sub-pixel, first source line, second source line, gate line, and power supply line. The first source line and the second source line extend along a first direction. The gate line and the power line extend along a second direction that intersects the first direction. In the planar diagram, the first source line and the second source line are located between the first sub-pixel and the second sub-pixel. The gate line has a region parallel to the power line.

14. A display device, comprising: A first sub-pixel including a first capacitor, a second sub-pixel including a second capacitor, a first source line, a second source line, a gate line, and a power supply line. The first source line and the second source line extend along a first direction. The gate line and the power line extend along a second direction that intersects the first direction. In the planar diagram, the first source line and the second source line are located between the first sub-pixel and the second sub-pixel. The gate line has a region parallel to the power supply line. In the plan view, the first capacitor and the second capacitor are located between the gate line and the power supply line.

15. A display device, comprising: A first sub-pixel including a first capacitor, a second sub-pixel including a second capacitor, a first source line, a second source line, a gate line, and a power supply line. The first source line and the second source line extend along a first direction. The gate line and the power line extend along a second direction that intersects the first direction. In the planar diagram, the first source line and the second source line are located between the first sub-pixel and the second sub-pixel. The gate line has a region parallel to the power supply line. In the plan view, the first capacitor and the second capacitor are located between the gate line and the power supply line. In the plan view, the first capacitor has a different shape than the second capacitor.

16. A display device, comprising: A first sub-pixel including a first capacitor, a second sub-pixel including a second capacitor, a first source line, a second source line, a gate line, and a power supply line. The first source line and the second source line extend along a first direction. The gate line and the power line extend along a second direction that intersects the first direction. In the planar diagram, the first source line and the second source line are located between the first sub-pixel and the second sub-pixel. The gate line has a region parallel to the power supply line. In the plan view, the first capacitor and the second capacitor are located between the gate line and the power supply line. In the plan view, the first capacitor extends longer in the second direction than in the first direction.

17. The display device according to any one of claims 13 to 16, wherein, The first sub-pixel has a first coloring layer that transmits green light. The second sub-pixel has a second coloring layer that transmits red light.

18. The display device according to claim 17, wherein, The first coloring layer overlaps with the first capacitor. The second coloring layer overlaps with the second capacitor.

19. The display device according to any one of claims 13 to 16, wherein, The power line is one of the electrodes of the first capacitor and the second capacitor.

20. The display device according to any one of claims 13 to 16, wherein, The display device is a liquid crystal display device.

Images