Highly conductive graphene / copper composite wire and method for manufacturing the same
Multilayer graphene-copper composite structures were prepared by chemical vapor deposition, low-power oxygen plasma activation, and non-aqueous electroplating, solving the problem of optimizing the performance of copper wires in the prior art and realizing copper/graphene composite wires with high conductivity, high strength and excellent thermal management performance.
Patent Information
- Application Number
- CN202610343230.0
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- Filing Date
- 2026-03-20
- Publication Date
- 2026-05-29
- Estimated Expiration
- 2046-03-20
AI Technical Summary
Existing technologies struggle to achieve high conductivity in copper wires without increasing material costs and reducing production efficiency, especially in terms of performance stability and synergistic optimization of mechanical and electrical properties under high temperature and high frequency conditions. Furthermore, the preparation process of graphene/copper composite materials is difficult to guarantee structural integrity and large-scale production.
In-situ growth of graphene layers was achieved using chemical vapor deposition, combined with low-power oxygen plasma activation and non-aqueous electroplating to form multilayered alternating graphene-copper composite structural units. Interfacial bonding was enhanced through annealing. A choline chloride-ethylene glycol-based deep eutectic solvent system was used to replace traditional aqueous electroplating, and process parameters were optimized to control the deposition and nucleation of the copper layer.
This achievement enables high conductivity and high-strength interface bonding of copper/graphene composite wires, reduces contact resistance, optimizes high-frequency current transmission and thermal management performance, and ensures product performance uniformity and large-scale reliability.