High-performance multi-channel arc channel type electron multiplier and preparation method thereof

Abstract

The invention relates to the technical field of electronic detection and signal amplification, in particular to a high-performance multi-channel arc channel type electron multiplier, which comprises an electronic input end used for receiving and focusing incident particles; the partition area is used for establishing a potential gradient; the alloy coating electrodes are respectively arranged at the input end and the output end of the electron multiplier and are used for applying working voltage; the multi-channel arc-shaped array structure comprises a plurality of arc-shaped channels which take the center of the section of the electron multiplication area tube body as the circle center and are uniformly arranged on the same circumference, and the arc-shaped channels are parallel to one another; the voltage division area is used for stabilizing electric field distribution in the channel; compared with the prior art, the high-gain and high-resolution collaborative improvement is realized, the high-temperature-resistant stability is excellent, the working life is ultra-long, meanwhile, low noise, quick response and efficient signal detection are achieved, the performance reaches the import standard, and a reliable core component is provided for localization of high-end instruments.

Description

Technical Field

[0001] This invention relates to the field of electronic detection and signal amplification technology, specifically to a high-performance multi-channel arc-shaped channel electron multiplier and its fabrication method. Background Technology

[0002] Since its invention in the late 1950s, the channel electron multiplier has become a key signal detection component in modern scientific instruments. Its working principle is based on the secondary electron emission effect: incident particles collide with the inner wall of the channel under the action of a high voltage electric field, generating secondary electrons, which are then amplified through cascade to achieve signal gain. Currently, most mainstream products are curved single-channel structures (such as arc-shaped, spiral-shaped, etc.), made of lead bismuth silicate glass through hydrogen reduction treatment. According to CN118800639A, a MeV-level gamma-sensitive electron multiplier and its fabrication method are disclosed. This technology discloses a method where "gamma rays enter a tubular shell through a collimator, and secondary electrons are emitted through the interaction between a metal cathode and the incident gamma rays. A substrate is fixed on the inner surface of the metal cathode, and the substrate surface forms a negative electron affinity material within a micrometer scale. Under the excitation of the secondary electrons penetrating the substrate, low-energy, multiplied secondary electrons are generated. The secondary electrons emitted from the surface of the negative electron affinity material are cascaded and multiplied through a microchannel plate. Finally, the cascaded and multiplied secondary electrons are collected by a metal anode to form an output signal, thereby detecting the count rate and interaction time information of the collimated gamma rays." This method possesses technical advantages such as [insert technical benefits here]. Existing high-performance single-channel electron multipliers are generally made of lead-bismuth silicate glass material through medium-temperature hydrogen reduction treatment. Although they can achieve basic signal amplification, they still face a series of prominent problems in practical applications: the single-channel structure design limits the spatial coverage of incident particles, resulting in low signal collection efficiency; the inner wall of the channel is prone to hydrocarbon deposition and contamination during long-term operation, causing a decline in secondary electron emission capability and gain attenuation; the relatively low process temperature limits the heat resistance of the material, making it unable to withstand the high-temperature baking requirements of ultra-high vacuum systems; increasing the operating voltage to enhance gain significantly reduces signal resolution, creating an irreconcilable technical contradiction; at the same time, the internal electron replenishment mechanism has bottlenecks, resulting in a limited lifespan, often requiring an increase in operating voltage to maintain performance, and the effective working cycle is generally short. Summary of the Invention

[0003] To address the shortcomings of existing technologies, this invention provides a high-performance multi-channel arc-shaped electron multiplier and its fabrication method, achieving a synergistic improvement in high gain and high resolution, possessing excellent high-temperature stability and ultra-long working life, while also achieving low noise, fast response and efficient signal detection, with performance reaching imported standards, providing a reliable core component for the localization of high-end instruments.

[0004] To achieve the above objectives, the present invention provides the following technical solution: a high-performance multi-channel arc-shaped channel electron multiplier, comprising: The electron input terminal is used to receive and focus incident particles; The isolation zone is used to establish a potential gradient; Alloy-plated electrodes are respectively located at the input and output terminals of the electron multiplier to apply the working voltage; The multi-channel arc array structure includes multiple arc channels evenly arranged on the same circumference with the center of the cross-section of the electron multiplication region tube as the center, and each arc channel is parallel to the others; The voltage divider region is used to stabilize the electric field distribution within the channel; The multi-channel arc array structure is integrally formed from lead-bismuth silicate glass after hydrogen reduction treatment, and a secondary electron emission layer is formed on its inner wall.

[0005] Preferably, the number of arc-shaped channels is 2 to 6, the radius of the arrangement circle is 1 mm to 2 mm, the inner diameter of each arc-shaped channel is 0.3 mm to 1 mm, the channel length is 30 mm to 80 mm, and the overall curvature of the multi-channel arc array structure is 0.8 to 1.2.

[0006] Preferably, the lead-bismuth silicate glass comprises, by mass percentage: 25%-65% PbO, 1%-20% Bi2O3, 13%-35% SiO2, and contains 0.3%-8.2% Cs2O, 0%-2.2% Rb2O, 0%-11% Na2O, 1%-9% BaO, 0.3%-5% Al2O3, and 0.1%-0.9% As2O3.

[0007] Preferably, the electronic input terminal is funnel-shaped and has an alkaline earth metal oxide coating on its inner surface. The coating material is aluminum oxide or magnesium oxide and the thickness is 10 nm to 40 nm.

[0008] Preferably, the thickness of the secondary electron emission layer is 30 nm to 90 nm, the surface roughness Ra is 0.1 μm to 0.3 μm, and the secondary electron emission coefficient is 1.7 to 2.5; the alloy-plated electrode is made of nickel-chromium alloy or chromium alloy and has a thickness of 40 nm to 150 nm.

[0009] This invention also discloses a method for fabricating a high-performance multi-channel arc-shaped channel electron multiplier, specifically including the following steps: S1: Weigh the glass raw materials according to the formula, melt them at 1000℃ to 1250℃ for 5.5 to 11.5 hours, and then keep them at 650℃ to 750℃ for 3.5 to 5.5 hours to remove air bubbles; draw, drill holes and bend the molten glass to form a multi-channel arc array structure blank with multiple arc channels. S2: The blank is treated in a hydrogen atmosphere at 400°C to 460°C for 2 to 6 hours to form a secondary electron emission layer with conductivity and secondary electron emission capability on the inner wall of the channel. S3: The area other than the electron input terminal is shielded, and an alkaline earth metal oxide coating is deposited on the inner surface of the electron input terminal using atomic layer deposition technology. S4: Remove the shielding, polish both ends of the channel, then use vacuum evaporation to form an alloy-plated electrode at the polished ends, and finally encapsulate it.

[0010] Preferably, in step S2, the hydrogen reduction treatment is carried out in a normal pressure hydrogen atmosphere, the treatment temperature is 430℃±30℃, and the treatment time is 3±1 hours.

[0011] Preferably, in step S3, the alkaline earth metal oxide coating is pure aluminum oxide or pure magnesium oxide, and the coating thickness is 20 nm to 40 nm.

[0012] Preferably, before the vacuum evaporation process in step S4, a step of cleaning the surface of the formed blank is included: ultrasonic cleaning with deionized water, acetone and ethanol for 10 to 20 minutes each, followed by purging and drying with nitrogen.

[0013] Preferably, in step S4, the thickness of the alloy coating electrode formed by the vacuum evaporation process is 80 nm to 120 nm; during packaging, the alignment accuracy of the electrode is controlled within ±5 μm.

[0014] This invention provides a high-performance multi-channel arc-shaped electron multiplier and its fabrication method. Compared with the prior art, it has the following advantages: 1. Through the synergistic effect of the parallel detection structure of the multi-channel arc array and the refined internal wall functional layer design, the technical limitations of traditional electron multipliers in balancing gain and resolution are effectively overcome. The multi-channel layout significantly improves signal collection efficiency and electron collision frequency within a limited space, while the secondary electron emission layer formed by the optimized reduction of glass materials with specific compositions greatly increases the electron yield per collision. At the same time, the electric field modulation mechanism of the isolation region and voltage divider region effectively suppresses ion feedback and electron diffusion, ensuring the stability and uniformity of the multiplication process. These comprehensive innovations in structural design and material processing enable the device to achieve signal gain far exceeding traditional levels and significantly optimized pulse distribution resolution at moderate operating voltages, providing key performance support for high-precision weak signal detection.

[0015] 2. Through systematic enhancements at the material system and fabrication process levels, the performance retention and lifespan of the electron multiplier under harsh environments such as high temperature and high vacuum have been significantly improved. By optimizing the glass composition and controlling the reduction process, a structurally stable and uniformly conductive functional layer is formed on the inner wall of the channel, enabling the device to withstand high-temperature baking with extremely low performance degradation, fully meeting the cleanliness requirements of ultra-high vacuum systems. In addition, the precisely controlled surface morphology and highly chemically stable coating design effectively delay the adsorption of contaminants and the process of material degradation. Combined with precise electrode alignment and reliable packaging, the overall device can maintain a stable gain level and low noise characteristics under long-term continuous operation conditions, and its cumulative signal carrying capacity far exceeds that of traditional products, providing a durable core detection component for high-end instruments that require continuous and reliable operation.

[0016] 3. Through multi-channel signal collection and electric field path optimization, significant noise suppression is achieved while improving signal response capability; the multi-channel parallel structure enhances the effective signal throughput, and combined with the functional coating at the input end, it greatly reduces the background noise, fundamentally improving the signal-to-noise ratio of the device; the geometric design of the arc-shaped channel and the control of the potential distribution make the electron transmission path more reasonable and the response faster, and the output signal has excellent time characteristics; the fully independent and controllable material preparation and precision machining process ensures the consistency and reliability of product performance, and has reached the international standards of similar products in actual instrument applications, demonstrating the comprehensive ability to directly replace imported devices. Attached Figure Description

[0017] Figure 1 This is a schematic diagram of the structure of the present invention.

[0018] In the diagram: 1. Electronic input terminal; 2. Isolation area; 3. Alloy-plated electrode; 4. Arc-shaped channel; 5. Voltage dividing area. Detailed Implementation

[0019] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the scope of protection of the present invention.

[0020] Please see Figure 1 This invention provides a technical solution: a high-performance multi-channel arc-shaped channel electron multiplier, comprising: Electron input terminal 1 is used to receive and focus incident particles; Isolation zone 2 is used to establish a potential gradient; Alloy-plated electrodes 3 are respectively disposed at the input and output terminals of the electron multiplier and are used to apply working voltage; The multi-channel arc array structure includes multiple arc channels 4 evenly arranged on the same circumference with the center of the cross-section of the electron multiplication region tube as the center, and each arc channel 4 is parallel to the others; Voltage dividing region 5 is used to stabilize the electric field distribution within the channel; The multi-channel arc array structure is integrally formed from lead-bismuth silicate glass after hydrogen reduction treatment, and a secondary electron emission layer is formed on its inner wall.

[0021] In this embodiment, the electron input terminal 1 adopts a trumpet-shaped design to effectively focus and capture incident electrons or ions, reducing signal loss. Subsequently, the particles enter a multi-channel array structure composed of multiple parallel, concentric arc-shaped channels 4. This structure is integrally formed from lead-bismuth silicate glass (containing modified oxides such as PbO, Bi2O3, SiO2, Cs2O, and BaO) with a specific formulation through high-temperature hydrogen reduction. Its inner wall forms a functional layer with micron-level roughness and a high secondary electron emission coefficient. When the working voltage is applied through the alloy-plated electrodes 3 at both ends, a strong electric field is established within the channel. Incident particles collide with the inner wall of the channel, exciting secondary electrons. These electrons, accelerated by the electric field, continue to collide with the opposite side. The wall surface triggers a cascade multiplication effect, achieving exponential signal amplification. The synergistic effect of isolation region 2 and voltage divider region 5 precisely controls the potential distribution within the channel, suppressing ion feedback and electron backflow to ensure stable multiplication. Optional alumina / magnesium oxide coatings at the input further enhance the initial electron yield. The multi-channel parallel structure significantly improves detection efficiency and signal throughput, making it particularly suitable for low-throughput, weak-signal environments. Optimized glass composition and reduction process enable the device to withstand high-temperature baking above 360°C with a gain attenuation rate of less than 10%, meeting the cleanliness requirements of ultra-high vacuum systems. The high emission coefficient and uniformity of the channel inner wall, combined with electric field modulation design, allow the device to simultaneously achieve a gain of up to 4.1 × 10⁻⁶ at a working voltage of 2000V. 8With a gain of 15–25% and excellent resolution, dark counts below 0.06 times / minute, and a significantly improved signal-to-noise ratio, the overall molding process ensures the channel's geometric accuracy and consistency. The cumulative lifespan exceeds 5×10¹¹ counts, supporting long-term stable operation. This comprehensively breaks through the limitations of traditional single-channel devices in terms of stability, efficiency, lifespan, and environmental resistance, providing high-precision analytical instruments such as mass spectrometers with domestically produced core detection components that meet performance standards.

[0022] Specifically, the number of arc-shaped channels 4 is 2 to 6, and the radius of the arrangement circle is 1 mm to 2 mm; the inner diameter of each arc-shaped channel 4 is 0.3 mm to 1 mm, and the channel length is 30 mm to 80 mm; the overall curvature of the multi-channel arc array structure is 0.8 to 1.2.

[0023] In this embodiment, by employing a multi-channel array design with 2 to 6 channels, and controlling the radius of the array circle within the range of 1 to 2 mm, it is ensured that each channel is uniformly distributed within a compact space, achieving multi-channel parallel detection, thereby significantly improving the spatial coverage of incident particles and signal collection efficiency. Precisely limiting the inner diameter of each channel to between 0.3 and 1 mm helps maintain a high electric field strength, promoting the acceleration and multiplication effect of electrons during collisions. The channel length is set to 30 to 80 mm. The mm provides ample gain length for electronic cascade amplification, ensuring high and stable gain at high voltages. The overall curvature of the multi-channel arc array is optimized to 0.8 to 1.2. This curvature design effectively balances electron transport efficiency and ion feedback suppression within the curved shape of the electron multiplier. A smaller curvature (such as close to 0.8) ensures smoother electron movement and improves transport efficiency, while a slightly larger curvature (such as close to 1.2) helps to block ion reverse movement, suppress noise, and ultimately achieve a balanced optimization of gain and resolution (reaching 15–25%), while ensuring high stability and long lifespan of the device during long-term use.

[0024] Specifically, the lead-bismuth silicate glass comprises, by mass percentage: 25%-65% PbO, 1%-20% Bi2O3, 13%-35% SiO2, and contains 0.3%-8.2% Cs2O, 0%-2.2% Rb2O, 0%-11% Na2O, 1%-9% BaO, 0.3%-5% Al2O3, and 0.1%-0.9% As2O3.

[0025] In this embodiment, PbO and Bi2O3 are the main components. After high-temperature reduction treatment, they can form a lead-bismuth alloy phase with suitable conductivity, providing the necessary electron supply and conduction path for secondary electron emission. SiO2 constitutes the glass network skeleton, ensuring the structural strength and thermal stability of the material. The introduction of alkali metal oxides such as Cs2O, Rb2O, and Na2O can effectively reduce the working temperature of the glass, improve the melting processability, and promote the formation of a surface conductive layer during reduction, thereby improving the secondary electron emission efficiency. The addition of BaO and Al2O3 helps to enhance the chemical durability and mechanical strength of the glass, suppressing surface damage caused by particle bombardment during use. As2O3... As a clarifying agent, it can reduce bubbles in the glass melting process and improve the smoothness and uniformity of the channel inner wall. Through the synergistic effect of each component, the secondary electron emission layer formed after hydrogen reduction not only has a high emission coefficient (up to 1.7–2.5) and good conductivity, but also excellent thermal stability and anti-contamination ability. This allows the electron multiplier to withstand baking treatments at temperatures above 360°C with a gain decay rate of no more than 10%, thereby significantly improving the long-term working stability and service life of the device in ultra-high vacuum environments. At the same time, the optimized glass composition also ensures that the channel inner wall has enhanced resistance to hydrocarbon contamination during long-term use, effectively delaying the gain decay caused by surface contamination. The cumulative counting lifetime can exceed 5×10¹¹, achieving a unity of high performance, long life and high reliability, laying a key material foundation for the preparation of domestically produced high-end electron multipliers.

[0026] Specifically, the electronic input terminal 1 is flared and has an alkaline earth metal oxide coating on its inner surface. The coating material is aluminum oxide or magnesium oxide and the thickness is 10 nm to 40 nm.

[0027] In this embodiment, the flared geometric design effectively collects and focuses incident electrons or ions, expanding the effective receiving area and reducing signal loss due to incident angle deviation or positional shift, thereby improving the initial particle capture efficiency. Furthermore, the alumina or magnesium oxide coating on the inner surface plays a crucial role: both materials possess high secondary electron emission coefficients and good chemical stability. When incident particles collide with this coating surface, they excite more secondary electrons, significantly increasing the initial electron yield and providing a stronger initial signal source for the subsequent cascade multiplication process within the arc-shaped channel. The thickness is controlled within the range of 10 to 40 nm, ensuring sufficient emitter thickness for efficient secondary electron emission while avoiding increased resistance, decreased adhesion, or unnecessary energy attenuation of incident particles that might result from an excessively thick coating. In addition, the coating also protects the substrate material to some extent, reducing direct adsorption of contaminants and contributing to the long-term stability of the input performance.

[0028] Specifically, the thickness of the secondary electron emission layer is 30 nm to 90 nm, the surface roughness Ra is 0.1 μm to 0.3 μm, and the secondary electron emission coefficient is 1.7 to 2.5; the alloy-coated electrode 3 is made of nickel-chromium alloy or chromium alloy, and the thickness is 40 nm to 150 nm.

[0029] In this embodiment, the thickness of the secondary electron emission layer is set between 30 and 90 nm, ensuring the formation of a continuous and dense conductive functional layer during hydrogen reduction. This provides sufficient electron supply and transport paths while avoiding excessive thickness that could lead to high inner wall resistance or reduced adhesion. The surface roughness Ra is controlled within the range of 0.1 to 0.3 μm, resulting in a uniform micro-undulation structure on the inner wall of the channel. This not only increases the effective emission area but also encourages incident electrons to collide with the wall at multiple angles, thereby exciting more secondary electrons and improving multiplication efficiency. Simultaneously, this roughness range helps maintain the relative uniformity of the electric field, preventing partial discharge or premature breakdown. The secondary electron emission coefficient reaches 1.7 to 2.5, significantly higher than traditional materials. This means that each collision generates more secondary electrons, resulting in higher overall gain and a better signal-to-noise ratio at the same operating voltage. The alloy-plated electrode 3 uses a nickel-chromium alloy or a chromium alloy due to its excellent conductivity, adhesion, and resistance to high-temperature oxidation; its thickness is controlled between 40 and 150 nm. The thickness is between nm, which can ensure that the electrode works stably under high voltage and provides a uniform electric field distribution, while avoiding stress accumulation caused by excessive thickness or thermal expansion mismatch with the glass substrate.

[0030] This invention also discloses a method for fabricating a high-performance multi-channel arc-shaped channel electron multiplier, specifically including the following steps: S1: Weigh the glass raw materials according to the formula, melt them at 1000℃ to 1250℃ for 5.5 to 11.5 hours, and then keep them at 650℃ to 750℃ for 3.5 to 5.5 hours to remove air bubbles; draw, drill holes and bend the molten glass to form a multi-channel arc array structure blank with multiple arc channels 4. S2: The blank is treated in a hydrogen atmosphere at 400°C to 460°C for 2 to 6 hours to form a secondary electron emission layer with conductivity and secondary electron emission capability on the inner wall of the channel. S3: The area except for electron input terminal 1 is shielded, and an alkaline earth metal oxide coating is deposited on the inner surface of electron input terminal 1 using atomic layer deposition technology. S4: Remove the shielding, polish both ends of the channel, and then use a vacuum evaporation process to form an alloy-plated electrode 3 at the polished ends, and finally encapsulate it.

[0031] In this embodiment, high-temperature melting and defoaming ensure the internal quality of the glass substrate, preventing electric field distortion or breakdown caused by bubbles; hydrogen reduction is carried out under strictly controlled temperature and time conditions, resulting in a functional layer with uniform composition, moderate conductivity, and high emission efficiency on the inner wall of the channel, providing a foundation for high gain and high resolution; atomic layer deposition technology can achieve nanoscale thickness controllable coatings on complex curved surfaces, improving input end performance without affecting the main channel structure; vacuum evaporation electrodes ensure a strong bond between the electrodes and the glass substrate with low resistance, which is conducive to establishing a stable working electric field; high consistency in the fabrication of multi-channel structures is achieved, significantly improving product yield and performance stability.

[0032] Specifically, in step S2, the hydrogen reduction treatment is carried out in a normal pressure hydrogen atmosphere, at a treatment temperature of 430℃±30℃, and for a treatment time of 3±1 hours.

[0033] In this embodiment, the reduction treatment is carried out in a normal pressure hydrogen atmosphere, which ensures that the hydrogen gas and the lead-bismuth silicate glass surface are fully and uniformly contacted, promoting the reduction of metal oxides such as lead and bismuth in the glass. This results in the formation of a secondary electron emission functional layer with moderate conductivity and rich in low work function metal particles on the inner wall of the channel. The temperature is precisely controlled within the range of 430℃±30℃ (i.e., 400℃ to 460℃) to ensure sufficient reduction while avoiding excessive temperature that could cause softening and deformation of the glass substrate or excessive growth and peeling of the functional layer. The time is set to 3±1 hours (i.e., 2 to 6 hours) to ensure that the reduction reaction is completely completed while preventing the functional layer from becoming too thick, increasing resistance, or becoming structurally loose due to excessive processing time. This results in a secondary electron emission layer with a stable thickness of 30–90 nm, a surface roughness Ra maintained at 0.1–0.3 μm, and a secondary electron emission coefficient reaching a high level of 1.7–2.5.

[0034] Specifically, in step S3, the alkaline earth metal oxide coating is pure aluminum oxide or pure magnesium oxide, and the coating thickness is 20 nm to 40 nm.

[0035] In this embodiment, high-purity alumina or magnesium oxide is selected as the coating material. Both materials have high secondary electron emission coefficients, excellent chemical stability, and good insulation properties (preventing charge accumulation). When incident particles collide with the coating surface, they can effectively excite more secondary electrons, thereby significantly increasing the initial electron yield at the electron multiplier input and providing a stronger signal source for the subsequent cascade multiplication process in the channel. The coating thickness is precisely controlled between 20 and 40 mm. The nanometer-scale coating is based on a comprehensive optimization of function and process: this thickness range ensures that the coating has sufficient mass thickness to achieve efficient secondary electron emission, while also ensuring good adhesion and structural density. It avoids uneven coverage and easy damage caused by excessive thinness, or increased stress, decreased adhesion, and unnecessary energy attenuation of incident particles caused by excessive thickness. In addition, this nanoscale coating is achieved through atomic layer deposition technology, which has excellent thickness uniformity and three-dimensional coverage, and can form a complete and consistent coating even in complex curved surfaces with a flared shape. After introducing this optimized coating at the input end, the overall gain level and signal-to-noise ratio of the electron multiplier are further improved, especially its sensitivity to weak signals. At the same time, the chemical stability of the coating helps resist contamination and slows down the performance degradation caused by hydrocarbon adsorption, thereby helping to maintain the performance stability of the device during long-term use and extending its effective service life.

[0036] Specifically, before the vacuum evaporation process in step S4, a surface cleaning step is also included: ultrasonic cleaning is performed sequentially with deionized water, acetone and ethanol for 10 to 20 minutes each, and then the surface is dried by blowing with nitrogen.

[0037] In this embodiment, the multi-step ultrasonic cleaning process aims to thoroughly remove various contaminants that may remain on the surface of the blank and inside the channels during the previous processing, reduction, and coating processes, including dust particles, organic residues, metal ions, and adsorbed moisture. Deionized water cleaning can effectively dissolve and remove most water-soluble inorganic salts and polar contaminants. Acetone, as a strongly polar organic solvent, can efficiently remove non-polar organic substances such as grease and resin. Ethanol has both good solubility and volatility, which can further remove residual acetone and water traces, while also achieving a certain dehydration effect. The ultrasonic time for each step is controlled to be 10 to 20 minutes to ensure the optimal acoustic cavitation effect. Under this action, contaminants can be fully peeled off and dispersed from the complex inner wall surface of the micron-level channel; subsequent purging and drying with high-purity nitrogen can quickly remove residual cleaning solvents, avoid secondary pollution or water spots that may occur due to natural drying, and provide a clean, oxygen-free drying environment to prevent surface oxidation; ensuring extremely high cleanliness of the inner wall of the channel and the area to be plated at the end, providing an ideal contamination-free substrate for the subsequent vacuum evaporation electrode process; this directly improves the adhesion strength and electrical contact quality between the alloy-coated electrode 3 and the glass substrate, avoiding problems such as increased contact resistance, insufficient adhesion, or local electrode detachment caused by interface contamination.

[0038] Specifically, in step S4, the thickness of the alloy coating electrode 3 formed by the vacuum evaporation process is 80 nm to 120 nm; during packaging, the alignment accuracy of the electrode is controlled within ±5 μm.

[0039] In this embodiment, the thickness of the alloy electrode is limited to the range of 80 to 120 nm, based on a comprehensive consideration of electrical performance and mechanical reliability. This thickness ensures that the electrode has a sufficiently low sheet resistance, thereby achieving a uniform electric field distribution under high operating voltage and avoiding heating or voltage drop caused by excessive local resistance. It also ensures that the electrode layer has good adhesion and flexibility, which can adapt to the slight thermal expansion differences that may exist between the glass substrate and the metal electrode, preventing cracking or peeling caused by internal stress accumulation due to excessive thickness. At the same time, the extremely high alignment accuracy requirement within ±5 μm ensures that the input and output electrodes are strictly aligned with the geometric center of the channel, which is the key to establishing a uniform, axial electric field. Precise alignment can effectively prevent electric field distortion and avoid electrons from being deflected or colliding with unexpected areas when moving in the channel, thereby ensuring the linearity, stability and gain consistency of the electron multiplication process.

[0040] It should be noted that, in this document, relational terms such as "first" and "second" are used only to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Furthermore, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such process, method, article, or apparatus.

[0041] Although embodiments of the invention have been shown and described, it will be understood by those skilled in the art that various changes, modifications, substitutions and alterations can be made to these embodiments without departing from the principles and spirit of the invention, the scope of which is defined by the appended claims and their equivalents.

Claims

1. A high-performance multi-channel arc-shaped channel electron multiplier, characterized in that, include: The electron input terminal (1) is used to receive and focus incident particles; The isolation zone (2) is used to establish a potential gradient; Alloy-plated electrodes (3) are respectively disposed at the input and output terminals of the electron multiplier for applying working voltage; The multi-channel arc array structure includes multiple arc channels (4) evenly arranged on the same circumference with the center of the cross-section of the electron multiplication zone tube as the center, and each arc channel (4) is parallel to the other. The voltage divider region (5) is used to stabilize the electric field distribution within the channel; The multi-channel arc array structure is integrally formed from lead-bismuth silicate glass after hydrogen reduction treatment, and a secondary electron emission layer is formed on its inner wall.

2. A high performance multi-channel arcuate channel electron multiplier according to claim 1, wherein: The number of arc channels (4) is 2 to 6, and the radius of the arrangement circle is 1 mm to 2 mm; the inner diameter of each arc channel (4) is 0.3 mm to 1 mm, and the channel length is 30 mm to 80 mm; the overall curvature of the multi-channel arc array structure is 0.8 to 1.

2.

3. The high-performance multi-channel arc-shaped channel electron multiplier according to claim 1, characterized in that: Lead-bismuth silicate glass comprises, by mass percentage: 25%-65% PbO, 1%-20% Bi2O3, 13%-35% SiO2, and contains 0.3%-8.2% Cs2O, 0%-2.2% Rb2O, 0%-11% Na2O, 1%-9% BaO, 0.3%-5% Al2O3, and 0.1%-0.9% As2O3.

4. The high-performance multi-channel arc-shaped channel electron multiplier according to claim 1, characterized in that: The electronic input terminal (1) is flared and has an alkaline earth metal oxide coating on its inner surface. The coating material is aluminum oxide or magnesium oxide and the thickness is 10 nm to 40 nm.

5. A high-performance multi-channel arc-shaped channel electron multiplier according to claim 1, characterized in that: The thickness of the secondary electron emission layer is 30 nm to 90 nm, the surface roughness Ra is 0.1 μm to 0.3 μm, and the secondary electron emission coefficient is 1.7 to 2.5; the alloy-coated electrode (3) is made of nickel-chromium alloy or chromium alloy and has a thickness of 40 nm to 150 nm.

6. A method for fabricating a high-performance multi-channel arc-shaped channel electron multiplier, characterized in that: The high-performance multi-channel arc-shaped electron multiplier according to any one of claims 1-5 specifically includes the following steps: S1: Weigh the glass raw materials according to the formula, melt them at 1000℃ to 1250℃ for 5.5 to 11.5 hours, and then keep them at 650℃ to 750℃ for 3.5 to 5.5 hours to remove bubbles; draw the molten glass, drill holes and bend it precisely to form a multi-channel arc array structure blank with multiple arc channels (4); S2: The blank is treated in a hydrogen atmosphere at 400°C to 460°C for 2 to 6 hours to form a secondary electron emission layer with conductivity and secondary electron emission capability on the inner wall of the channel. S3: The area other than the electron input terminal (1) is shielded, and an alkaline earth metal oxide coating is deposited on the inner surface of the electron input terminal (1) using atomic layer deposition technology. S4: Remove the shielding, polish both ends of the channel, and then use vacuum evaporation process to form an alloy-plated electrode (3) at the polished ends, and finally encapsulate it.

7. The method for fabricating a high-performance multi-channel arc-shaped channel electron multiplier according to claim 6, characterized in that: In step S2, the hydrogen reduction treatment is carried out in a normal pressure hydrogen atmosphere, at a treatment temperature of 430℃±30℃, and for a treatment time of 3±1 hours.

8. The method for fabricating a high-performance multi-channel arc-shaped channel electron multiplier according to claim 6, characterized in that: In step S3, the alkaline earth metal oxide coating is pure aluminum oxide or pure magnesium oxide, and the coating thickness is 20 nm to 40 nm.

9. The method for fabricating a high-performance multi-channel arc-shaped channel electron multiplier according to claim 6, characterized in that: Before the vacuum evaporation process in step S4, a surface cleaning step is also included: ultrasonic cleaning is performed sequentially with deionized water, acetone and ethanol for 10 to 20 minutes each, and then the surface is dried by blowing with nitrogen.

10. The high-performance multi-channel arc-shaped channel electron multiplier and its preparation method according to claim 6, characterized in that: In step S4, the thickness of the alloy coating electrode (3) formed by the vacuum evaporation process is 80 nm to 120 nm; during packaging, the alignment accuracy of the electrode is controlled within ±5 μm.

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