Multistage device, control method thereof and die bonding device

Abstract

The invention relates to a multi-stage device, a control method thereof and a bare chip bonding device. The multi-stage device comprises a clamping part; a first accommodation portion formed corresponding to at least a portion of the first semiconductor material to enable the first semiconductor material to be received from the first robot arm; and a second receiving portion formed corresponding to at least a portion of the second semiconductor material to enable the second semiconductor material to be received from the second robot arm.

Description

Technical Field

[0001] This invention relates to a multi-stage device and its control method, as well as a die bonding apparatus. More specifically, it relates to a multi-stage device and its control method, as well as a die bonding apparatus, that utilizes a clamping part and a single lifting structure to respectively accommodate a wafer and a wafer ring or to allow inspection after accommodation. Background Technology

[0002] Typically, semiconductor devices are formed on a silicon wafer, which serves as a semiconductor substrate, by repeatedly performing a series of manufacturing processes. The wafer on which the semiconductor device is formed can be divided into multiple dies by a dicing process, and the individualized dies obtained by the dicing process can be bonded to a substrate such as a lead frame by a die bonding process.

[0003] Recently, in order to manufacture semiconductor packages using a stacked method of through silicon via (TSV), there is a need for a die-to-wafer (D2W) process, i.e., wafer-level bonding process or hybrid bonding process, on which individual dies are directly bonded to a wafer on which semiconductor elements are formed. Summary of the Invention

[0004] However, existing hybrid bonding devices have many problems. For example, they require separate stage structures for holding wafers of about 300 mm in size and stage structures for holding wafer rings of about 400 mm in size. As a result, they occupy a lot of volume in narrow internal spaces such as cluster equipment or require additional manufacturing costs, operating costs, or management costs for additional parts.

[0005] This invention addresses numerous problems, including those described above, and aims to provide a multi-stage apparatus and its control method for accommodating wafers and wafer rings or performing post-accommodation inspection using a single clamping part and a single lifting structure, as well as a die bonding apparatus. However, these issues are illustrative, and the scope of the invention is not limited thereto.

[0006] To address the aforementioned issues, a multi-stage device according to the present invention may be provided, comprising: a clamping portion capable of clamping a first semiconductor material or a second semiconductor material; a first receiving portion formed corresponding to at least a portion of the first semiconductor material to enable receiving the first semiconductor material from a first robotic arm, and configured to be able to move up and down relative to the clamping portion so that the received first semiconductor material can be clamped in the clamping portion; and a second receiving portion formed corresponding to at least a portion of the second semiconductor material to enable receiving the second semiconductor material from a second robotic arm, and configured to be able to move up and down relative to the clamping portion so that the received second semiconductor material can be clamped in the clamping portion.

[0007] Alternatively, according to the present invention, the size of the first semiconductor material is larger than the size of the second semiconductor material, the first receiving portion is at least partially penetrating the interior of the clamping portion and forming at least one, and the second receiving portion is disposed at least one on the outer periphery of the clamping portion.

[0008] Alternatively, according to the present invention, the first semiconductor material may include a wafer, and the second semiconductor material may include a wafer ring supported by a dicing tape or a diced die.

[0009] Alternatively, according to the present invention, the first receiving portion includes at least one lifting pin, the lifting pin being formed such that at least a portion passes through the clamping portion and is capable of lifting and lowering to support the lower surface of the wafer, and the second receiving portion includes at least one lifting block, the lifting block being formed on top of a frame that is spaced apart from the clamping portion and formed in a ring around the clamping portion, so as to support the side and lower surface of the wafer ring.

[0010] Alternatively, according to the present invention, the frame and the lifting pin are connected to each other so that the lifting pin and the lifting block can be raised and lowered together using a separate lifting device.

[0011] Alternatively, according to the present invention, the lifting pins are three lifting pins arranged at approximately 120-degree intervals on the clamping part, and the lifting blocks are three lifting blocks arranged at approximately 90-degree intervals in three of four positions relative to the clamping part, excluding one position that interferes with the entry of the second robotic arm.

[0012] Alternatively, according to the present invention, the lifting pin has a first contact portion and is generally formed in the shape of a cylindrical pin. The first contact portion can rise to a first receiving height lower than the first entry height of the first robotic arm and stand by, so that the first robotic arm can place the wafer while entering and descending at the first entry height, and can descend to below the clamping height of the clamping portion, so that the clamping portion can clamp the wafer. The lifting block has a second contact portion and is generally formed in the shape of a polyhedral block. The second contact portion can rise to a second receiving height lower than the second entry height of the second robotic arm and stand by, so that the second robotic arm can place the wafer ring while entering and descending at a second entry height higher than the first entry height, and can rise to a second receiving height higher than the first receiving height and stand by, so that the wafer ring does not interfere with the lifting pin, and can descend to below the clamping height of the clamping portion, so that the clamping portion can clamp the cutting tape of the wafer ring.

[0013] Alternatively, according to the present invention, the lifting block may be provided with a push rod on one side that contacts the side of the wafer ring and an actuator that moves the push rod forward and backward, so that pressure can be applied to the side of the wafer ring placed on the second contact portion for alignment.

[0014] Alternatively, according to the present invention, the lifting block is formed with an inclined surface so that when the wafer ring is lowered by the second robotic arm, it can contact the wafer ring and align the wafer ring.

[0015] Alternatively, according to the present invention, the second receiving portion may further include: an expansion ring formed above the lifting block, which forcibly stretches the cutting tape while contacting the upper surface of the wafer ring and descending, so as to prevent air bubbles or wrinkles that may occur between the cutting tape and the clamping portion when the lifting block descends and the cutting tape of the wafer ring contacts the clamping portion.

[0016] Alternatively, according to the present invention, the extended ring has an extended contact portion and is generally formed as a circular ring shape with a through window having an inner diameter larger than that of the clamping portion at its center. When the second robotic arm enters at a second entry height, the extended contact portion can rise to a height above the second entry height to standby, so as not to interfere with the second robotic arm. If the clamping portion contacts the cutting tape of the wafer ring, the extended contact portion can contact the top surface of the wafer ring and descend to below the clamping height of the clamping portion.

[0017] Alternatively, according to the present invention, the clamping part may include a porous vacuum chuck, the porous vacuum chuck having pin holes to allow the lifting pin to move up and down, and being connected to a vacuum line provided with a vacuum valve and a vacuum pump to allow a vacuum pressure to be formed on the surface other than the pin holes.

[0018] Alternatively, according to the present invention, the multi-stage device may further include: a control unit, which, in a first receiving mode, applies a rising control signal to the independent lifting device so that the lifting pin can receive the wafer, applies a falling control signal to the independent lifting device so that the received wafer can contact the clamping part, and applies an opening signal to the vacuum valve so that the wafer in contact with the clamping part can be clamped in the porous vacuum chuck by vacuum pressure.

[0019] Alternatively, according to the present invention, in the second receiving mode, the control unit applies an upward control signal to the independent lifting device so that the lifting block can receive the wafer ring, and applies a first downward control signal to the independent lifting device so that the dicing tape of the received wafer ring can contact the clamping part, and applies a second downward control signal to the independent lifting device so that the extension ring can stretch the dicing tape of the wafer ring, and after the dicing tape is fully stretched, applies an opening signal to the vacuum valve so that the dicing tape of the wafer ring can be clamped in the porous vacuum chuck by vacuum pressure.

[0020] Alternatively, according to the present invention, in the second receiving mode, if the lifting block receives the wafer ring, the control unit applies an alignment control signal to an actuator that causes a push rod disposed on the lifting block and in contact with the side of the wafer ring to move forward and backward, so that the wafer ring can be aligned to a reference position.

[0021] Alternatively, according to the present invention, the first robotic arm is generally formed as a U-shape with two first fingers open in front, having a first separation distance, so as not to interfere with the lifting pin; the second robotic arm is generally formed as a U-shape with two second fingers open in front, having a second separation distance longer than the first separation distance, so as not to interfere with the lifting pin and the lifting block; the first robotic arm and the second robotic arm are formed in a transfer robot.

[0022] On the other hand, to solve the above-mentioned technical problems, a control method for a multi-stage device according to the present invention may be provided, comprising: (a) a step of identifying whether the semiconductor material to be accommodated is a wafer or a wafer ring; (b) a step of executing a first accommodating mode when the semiconductor material is a wafer; and (c) a step of executing a second accommodating mode when the semiconductor material is a wafer ring, wherein step (b) comprises: (b-1) in the first accommodating mode, raising and idling a lifting pin using an independent lifting device so that the lifting pin can receive the wafer; (b-2) receiving the wafer from a first robotic arm that enters at a height higher than the lifting pin and places the wafer on the lifting pin; (b-3) lowering the lifting pin using the independent lifting device so that the received wafer can contact the clamping part; and (b-4) forming a vacuum pressure in a porous vacuum chuck so that the wafer in contact with the clamping part can be clamped in the porous vacuum chuck by the vacuum pressure.

[0023] Alternatively, according to the present invention, step (c) may include: (c-1) in a second receiving mode, raising and idling the lifting block using the separate lifting device so that the lifting block can receive the wafer ring; (c-2) receiving the wafer ring from a second robotic arm that enters at a height higher than the lifting block and places the wafer ring on the lifting block; (c-3) lowering the lifting block once using the independent lifting device so that the dicing tape of the received wafer ring can contact the clamping portion; (c-4) lowering the lifting block a second time using the independent lifting device so that the extension ring can stretch the dicing tape of the wafer ring; and (c-5) after fully stretching the dicing tape, forming a vacuum pressure in the porous vacuum chuck so that the dicing tape of the wafer ring can be clamped in the porous vacuum chuck by the vacuum pressure.

[0024] Alternatively, according to the present invention, after step (c-2), the method may further include: (c-6) a step of aligning the received wafer ring to a reference position using an actuator provided on the lifting block to move a push rod that contacts the side of the wafer ring forward and backward.

[0025] On the other hand, to solve the above-mentioned technical problems, a die bonding apparatus according to the present invention may be provided, comprising: a bonding module for bonding a second semiconductor material onto a first semiconductor material; a loading port for supporting a container holding the first semiconductor material or the second semiconductor material; a transfer module for providing a transfer robot for transferring the first semiconductor material or the second semiconductor material from the container to the bonding module; and an inspection module capable of inspecting both the first semiconductor material and the second semiconductor material, the inspection module comprising: a multi-stage device capable of accommodating both the first semiconductor material and the second semiconductor material; and an inspection camera capable of photographing both the first semiconductor material and the second semiconductor material. The semiconductor material is used for foreign object inspection or condition inspection. The multi-stage device includes: a clamping portion capable of clamping the first semiconductor material or the second semiconductor material; a first receiving portion formed corresponding to at least a portion of the first semiconductor material to enable receiving the first semiconductor material from a first robotic arm, and configured to move up and down relative to the clamping portion so that the received first semiconductor material can be clamped in the clamping portion; and a second receiving portion formed corresponding to at least a portion of the second semiconductor material to enable receiving the second semiconductor material from a second robotic arm, and configured to move up and down relative to the clamping portion so that the received second semiconductor material can be clamped in the clamping portion.

[0026] According to the various embodiments of the present invention formed as described above, the following effects are achieved: It is possible to utilize a lifting structure that can be raised and lowered via a clamping part and an independent lifting device to perform various accommodating functions, such as loading and unloading wafers and wafer rings of dissimilar semiconductor materials; after accommodating the wafer ring, stable inspection can be achieved by preventing bubble and wrinkle phenomena through expansion functions; an alignment function that can automatically align the wafer ring to a reference position is possible; it is applicable to inspection modules of die bonding apparatuses, and also applicable to various other stage modules, cleaning modules, transfer modules, bonding modules, etc., that can operate wafers and wafer rings, in addition to inspection modules. Of course, the scope of the present invention is not limited to these effects. Attached Figure Description

[0027] Figure 1 This is a plan view that schematically illustrates the structure of a die bonding apparatus according to a partial embodiment of the present invention.

[0028] Figure 2 It is a summary. Figure 1 A plan view of the first bonding module.

[0029] Figure 3 It is a summary. Figure 2 Side view of the bonding head and bonding stage.

[0030] Figure 4 It is shown Figure 1 A three-dimensional view of the multi-stage device of the inspection module.

[0031] Figure 5 It is shown Figure 4 A side view of a multi-stage device.

[0032] Figures 6 to 10 It is shown in stages Figure 4 A diagram illustrating the process of the first containment mode of a multi-stage device.

[0033] Figures 11 to 16 It is shown in stages Figure 4 A diagram illustrating the process of the second containment mode of a multi-stage device.

[0034] Figure 17 This is a perspective view illustrating a multi-stage device according to another embodiment of the present invention.

[0035] Figure 18 This is a plan view illustrating a multi-stage device according to yet another embodiment of the present invention.

[0036] Figure 19 This is a perspective view illustrating a multi-stage device according to yet another embodiment of the present invention.

[0037] Figure 20This is a flowchart illustrating a control method for a multi-stage device according to a partial embodiment of the present invention.

[0038] Figure 21 This is a flowchart illustrating a control method for a multi-stage device according to another embodiment of the present invention.

[0039] (Explanation of reference numerals in the attached diagram)

[0040] 1: First Semiconductor Material

[0041] W: Wafer

[0042] 2: Second semiconductor material

[0043] WR: Wafer Ring

[0044] DT: Cutting tape

[0045] D: Nude film

[0046] 10: Die bonding device

[0047] 50, 52: Containers

[0048] 100, 102: Bonding modules

[0049] 200: Loading port

[0050] 400, 410: Transfer Module

[0051] R1: First Transfer Robot

[0052] R2: Second Transfer Robot

[0053] RA1: First robotic arm

[0054] S1: First separation distance

[0055] F1: First finger

[0056] RA2: Second robotic arm

[0057] S2: Second separation distance

[0058] F2: Second finger

[0059] 500: Check Module

[0060] 510, 610, 710, 810: Multi-stage device; 511: Clamping part

[0061] 511a: Pin hole

[0062] 511b: Multi-hole vacuum chuck

[0063] L: Vacuum wire

[0064] V: Vacuum valve

[0065] P: Vacuum pump

[0066] A1: First Reception Section

[0067] 512: Lifting pin

[0068] 512a: First contact part

[0069] EH1: First Entry Height

[0070] AH1: First Capacity Height

[0071] CH: Clamping height

[0072] A2: Second Reception Section

[0073] 513: Lifting Block

[0074] 513a: Second contact part

[0075] EH2: Second Entry Height

[0076] AH2: Second Capacity Height

[0077] PU: Push rod

[0078] AC: Actuator

[0079] CF: Inclined surface

[0080] 514: Framework

[0081] M: Independent lifting device

[0082] 515: Extended ring

[0083] 515a: Extended contact section

[0084] 515b: Through window

[0085] 520: Distance Sensor

[0086] 530: Check the camera

[0087] 540: Fourth gantry structure

[0088] 550: Horizontal drive unit

[0089] 560: Second drive unit

[0090] 570: Control Department Detailed Implementation

[0091] Hereinafter, several preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.

[0092] The embodiments of the present invention are provided to more fully illustrate the invention to those skilled in the art. The following embodiments can be modified in many different ways, and the scope of the invention is not limited to these embodiments. Rather, these embodiments are provided to make this disclosure more comprehensive and complete, and to fully convey the concept of the invention to those skilled in the art. Furthermore, the thickness or dimensions of the layers in the drawings are exaggerated for ease of explanation and clarity.

[0093] The terminology used in this specification is for illustrative purposes and is not intended to limit the invention. As used herein, the singular form may include the plural form unless otherwise expressly indicated in the context. Furthermore, when used in this specification, "comprise" and / or "comprising" specifically refers to the presence of the shapes, numbers, steps, operations, components, elements, and / or combinations thereof, and does not exclude the presence or addition of one or more other shapes, numbers, operations, components, elements, and / or combinations thereof.

[0094] Hereinafter, embodiments of the invention will be described with reference to the accompanying drawings, which schematically illustrate preferred embodiments of the invention. In the drawings, for example, variations in the shapes shown may be contemplated depending on manufacturing techniques and / or tolerances. Therefore, embodiments of the inventive concept should not be construed as limited to specific shapes within the areas shown in this specification, but should include, for example, variations in shape resulting from manufacturing processes.

[0095] Figure 1 This is a plan view that schematically illustrates the structure of a die bonding apparatus 10 according to a partial embodiment of the present invention.

[0096] like Figure 1 As shown, the die bonding apparatus 10 according to a partial embodiment of the present invention can, for example, be used to perform a die bonding process in which a die D (refer to) is pressed onto a wafer W, which is a first semiconductor material 1. Figure 2 The bare die D is bonded to the wafer W.

[0097] The die bonding apparatus 10 may include, for example, bonding modules 100, 102 that apply pressure to the die D on the wafer W to bond the die D on the wafer W. Multiple dies D on the wafer W may be provided in an attached or temporarily bonded state, and the dies D may be bonded to the wafer by thermo-pressurization using the bonding modules.

[0098] For example, to improve productivity, the die bonding apparatus 10 may include multiple bonding modules 100, 102.

[0099] As an example, as shown in the figure, the die bonding apparatus 10 may include two first bonding modules 100 arranged in the Y-axis direction and a second bonding module 102 arranged in the Y-axis direction at a predetermined distance from the first bonding modules 100 at the X-axis direction. However, the number and configuration of the first and second bonding modules 100, 102 can be varied, and therefore the scope of the invention is not limited thereto.

[0100] The die bonding apparatus 10 may include, for example, a loading port 200 of a container 50 that supports and houses a plurality of wafers W or wafer rings WR as a second semiconductor material 2, a wafer alignment unit 300 for aligning wafers W or wafer rings WR, a first transfer module 400 for transferring wafers W or wafer rings WR between the container 50 and the wafer alignment unit 300, and a second transfer module 410 for transferring wafers W or wafer rings WR between the wafer alignment unit 300 and the first and second bonding modules 100, 102, etc.

[0101] The first and second transfer modules 400 and 410 may respectively include first and second transfer robots R1 and R2, as shown in the figure. As the first and second transfer robots R1 and R2, each can be equipped with a first robotic arm RA1 (see reference) for transferring wafers W. Figure 6 ) and the multi-joint robot RA2, the second robotic arm used to transfer the wafer ring WR.

[0102] The first transfer module 400 can remove wafer W or wafer ring WR from container 50 and transfer wafer W or wafer ring WR to wafer alignment unit 300. The second transfer module 410 can load the wafer W or wafer ring WR aligned by wafer alignment unit 300 into one of the first and second bonding modules 100, 102. Additionally, the second transfer module 410 can unload the wafer W or wafer ring WR after the bonding process is completed from one of the first and second bonding modules 100, 102. That is, the second transfer module 410 can be used for loading and unloading wafer W or wafer ring WR from the first and second bonding modules 100, 102.

[0103] According to one embodiment of the present invention, the die bonding apparatus 10 may include a cleaning unit 350 disposed above the wafer alignment unit 300 and used to remove contaminants from the wafer W or wafer ring WR being transferred to the wafer alignment unit 300.

[0104] The first and second bonding modules 100 and 102 may have substantially the same structure as each other.

[0105] The inspection module 500 may include, for example, a multi-stage device 510 and a distance sensor 520, wherein the multi-stage device 510 may support a wafer W and a wafer ring WR respectively, and the distance sensor 520 is disposed above the multi-stage device 510 for measuring the distance to the top of the wafer W or the wafer ring WR and the top of the die D bonded to the wafer W.

[0106] More specifically, the multi-stage device 510 can be configured to use a second drive unit 560 (see reference). Figure 1 as well as Figure 5 The distance sensor 520 can be configured to move in the X-axis direction via a horizontal drive unit 550 on the fourth gantry structure 540.

[0107] Additionally, the inspection module 500 may include an inspection camera 530 (see reference) capable of inspecting contaminants or dicing status of the die D on the wafer W or wafer ring WR, and capable of inspecting whether the die D is properly bonded to the pre-set position on the wafer W. Figure 1 as well as Figure 5 The inspection camera 530 can be configured to move together with the distance sensor 520. In particular, the distance sensor 520 can move in the Y-axis direction to scan the die D on the wafer W, and the inspection camera 530 can obtain an inspection image of the die D.

[0108] Additionally, a second wafer alignment unit 340 may be configured within the inspection module 500. The second wafer alignment unit 340 may be substantially identical in configuration to the wafer alignment unit 300 and may be used for aligning the wafer W loaded onto the inspection module 500.

[0109] Wafer W or wafer ring WR that has completed inspection in inspection module 500 can be transferred to bonding modules 100, 102 or container 50 via first transfer module 400. However, unlike the above, a second container 52 for receiving wafer W or wafer ring WR that has completed the die bonding process can be configured in loading port 200, and wafer W or wafer ring WR that has completed the inspection process can also be transferred to the second container 52 via first transfer module 400.

[0110] As shown in the figure, the inspection module 500 is connected to the first transfer module 400, but the inspection module 500 can also be connected to the second transfer module 410. That is, the die bonding apparatus 10 of the present invention can also be configured as a cluster equipment centered on the second transfer module 410.

[0111] Figure 2 It is a summary. Figure 1 A plan view of the first bonding module 100. Figure 3 It is a summary. Figure 2Side view of the bonding stage 110 and bonding head 120.

[0112] like Figure 2 as well as Figure 3 As shown, the first bonding module 100 may include a bonding stage 110, at least one bonding head 120, and a head drive unit 130. The bonding stage 110 is used to support the wafer W, the at least one bonding head 120 is used to apply pressure to the die D on the wafer W, and the head drive unit 130 moves the bonding head 120 in the horizontal and vertical directions to selectively apply pressure to the die D.

[0113] As an example, as shown in the figure, the head drive unit 130 can move the bonding head 120 in the Y-axis direction. The first bonding module 100 may include a stage drive unit 112 that moves the bonding stage 110 in the horizontal direction, i.e., in the X-axis direction perpendicular to the Y-axis direction, to selectively apply pressure to the die D. Furthermore, the first bonding module 100 may be configured such that, in order to shorten the die bonding process time, two bonding heads 120 are provided. Each bonding head 120 can be moved in the Y-axis direction by the head drive unit 130, and simultaneously moved in the vertical direction to apply pressure to the die D.

[0114] The head drive unit 130 can be configured on, for example, first and second gantry structures 140, 142 extending parallel in the Y-axis direction, and may include a movable plate 132 configured to move in the Y-axis direction on the first and second gantry structures 140, 142. Additionally, the head drive unit 130 may be provided with a vertical drive unit 134 for moving the bonding head 120 in the vertical direction, and the vertical drive unit 134 may be mounted on the movable plate 132.

[0115] Additionally, the first bonding module 100 may be equipped with a lower camera 160 to confirm whether the bonding tool 150 is properly installed below the bonding head 120. Specifically, the bonding tool 150 can be installed alternately according to the die size D on the wafer W. After the bonding tool 150 is installed, the installation status of the bonding tool 150 can be checked through the lower camera 160.

[0116] The bonding stage 110 can be configured to move via the stage drive unit 112, and a heater 114 for heating the wafer W can be built inside it. Additionally, a wafer camera 162 for observing the die D on the wafer W can be disposed above the bonding stage 110. As an example, the wafer camera 162 can be configured to move along the Y-axis on the first gantry structure 140 via the camera drive unit 164, and can be used for alignment between the die D and the bonding head 120. That is, the position of the die D attached to the wafer W can be observed by the wafer camera 162, and alignment between the bonding head 120 and the die D can be achieved using the observed position coordinates of the die D.

[0117] Figure 4 It is shown Figure 1 A three-dimensional view of the multi-stage device 510 of the inspection module 500. Figure 5 It is shown Figure 4 Side view of the multi-stage device 510.

[0118] like Figure 4 as well as Figure 5 As shown, the multi-stage device 510 according to some embodiments of the present invention may generally include a clamping part 511, a first receiving part A1, and a second receiving part A2.

[0119] The clamping part 511 may be, for example, a clamping device that can clamp either a wafer W which is a first semiconductor material 1 or a wafer ring WR which is a second semiconductor material 2 and includes a bare die D attached to a cutting tape DT.

[0120] More specifically, the clamping part 511 may form a pin hole 511a so that the lifting pin 512, which serves as the first receiving part A1, can be raised and lowered, including a porous vacuum chuck 511b connected to a vacuum line L provided with a vacuum valve V and a vacuum pump P, so that a vacuum pressure can be formed on the surface other than the pin hole 511a.

[0121] However, such a clamping part 511 is not necessarily limited to the figure shown, and can be used with a wide variety of clamping devices that can clamp the wafer W or wafer ring WR by means of a vacuum chuck, electrostatic chuck, clamp or clamping pin with multiple vacuum holes.

[0122] Here, for example, the first semiconductor material 1 can be used for a wafer W with a size of approximately 300 mm, and the second semiconductor material 2 can be used for a wafer ring WR that supports the wafer W or the cut die D using a cutting tape DT.

[0123] That is, when the size of the second semiconductor material 2 is larger than the size of the first semiconductor material 1, the first receiving portion A1 can be formed by at least one portion penetrating the interior of the clamping portion 511, and the second receiving portion A2 can be arranged around the outside of the clamping portion 511.

[0124] For example, the first receiving portion A1 may be formed corresponding to at least a portion of the first semiconductor material 1 so that the first semiconductor material 1 is received from the first robotic arm RA1, and is formed to be a movable guide structure that can be raised and lowered with reference to the clamping portion 511 so that the received first semiconductor material 1 can be clamped in the clamping portion 511.

[0125] More specifically, the first receiving portion A1 may be fitted with at least one lifting pin 512, which is formed in a cylindrical shape as at least part of the through clamping portion 511 and is capable of being raised and lowered so as to support the bottom of the wafer W.

[0126] For example, the second receiving portion A2 may be formed corresponding to at least a portion of the second semiconductor material 2 so that the second semiconductor material 2 is received from the second robotic arm RA2, and is formed to be a movable guide structure that can be raised and lowered with reference to the clamping portion 511 so that the received second semiconductor material 2 can be clamped in the clamping portion 511.

[0127] More specifically, the second receiving portion A2 may be adapted to at least one lifting block 513, which is formed in a polyhedral shape on top of a frame 514 that is spaced apart from the clamping portion 511 and formed in a ring around the clamping portion 511, so as to support the sides and bottom of the wafer ring WR.

[0128] Here, as Figure 4 and Figure 5 As shown, the frame 514 and the lifting pin 512 can be connected to each other so that the lifting pin 512 and the lifting block 513 can be raised and lowered simultaneously using an independent lifting device M.

[0129] On the other hand, the lifting pins 512 can be applied to three lifting pins 512 that are equally spaced at approximately 120-degree intervals on the upper part of the clamping part 511, and the lifting block 513 can be applied to four positions that are equally spaced at approximately 90-degree intervals with respect to the clamping part 511, except for the position of the second robotic arm RA2 (see reference). Figure 11 The three lifting blocks 513 are respectively configured at the three positions other than the one position that causes interference when the entry of the block causes interference.

[0130] Therefore, when entering in the direction of entry, the first robotic arm RA1 (refer to...) Figure 6 ) and the second robotic arm RA2 (refer to Figure 11All three lifting pins 512 and three lifting blocks 513 can enter between them without interfering with each other, and can respectively load and unload the wafer W and the wafer ring WR to the position above the clamping part 511.

[0131] On the other hand, such as Figure 5 As shown, the second receiving portion A2 of the multi-stage device 510 according to a partial embodiment of the present invention may further include an expanding ring 515 of the cutting tape DT formed above the lifting block 513, which forcibly stretches the cutting tape DT while descending in contact with the upper surface of the wafer ring WR, so that when the lifting block 513 descends and the cutting tape DT of the wafer ring WR contacts the clamping portion 511, air bubbles or wrinkles that may occur between the cutting tape DT and the clamping portion 511 can be prevented.

[0132] More specifically, the expansion ring 515, which is formed in the shape of the upper part of the connecting lifting block 513, can be a pressure structure. The pressure structure is formed as a whole into a circular ring shape with a through window 515b having an inner diameter larger than that of the clamping part 511, so that it does not interfere with the clamping part 511 at the center.

[0133] However, this extension ring 515 is not necessarily limited to the attached figure and can be applied to various forms of extension structures.

[0134] In addition, such as Figure 5 As shown, the multi-stage device 510 according to a partial embodiment of the present invention may further include a control unit 570, which, in a first receiving mode, applies an upward control signal to the independent lifting device M so that the lifting pin 512 can receive the wafer W, applies a downward control signal to the independent lifting device M so that the received wafer W can contact the clamping part 511, and applies an opening signal to the vacuum valve V so that the wafer W in contact with the clamping part 511 can be clamped in the porous vacuum chuck 511b by vacuum pressure.

[0135] In the second receiving mode, the control unit 570 can apply a rising control signal to the independent lifting device M so that the lifting block 513 can receive the wafer ring WR, apply a first falling control signal to the independent lifting device M so that the cut tape DT of the received wafer ring WR can contact the clamping part 511, apply a second falling control signal to the independent lifting device M so that the expansion ring 515 can stretch the cut tape DT of the wafer ring WR, and after the cut tape DT is fully stretched, apply an opening signal to the vacuum valve V so that the cut tape DT of the wafer ring WR can be clamped in the porous vacuum chuck 511b by vacuum pressure.

[0136] Figures 6 to 10 It is shown in stages Figure 4 A diagram showing the process of the first containment mode of the multi-stage device 510.

[0137] First, such as Figure 6 as well as Figure 7 As shown, in the first receiving mode, the first robotic arm RA1 can enter the space between the extension ring 515 and the lifting pin 512 so that the wafer W can be loaded onto the lifting pin 512.

[0138] At this time, the first robotic arm RA1 can be formed as a whole into two first fingers F1 with a first separation distance S1 and an open U-shape in front of F1, so as not to interfere with the lifting pin 512. The first contact part 512a of the lifting pin 512 can rise to a first receiving height AH1 lower than the first entry height EH1 of the first robotic arm RA1 and standby, so that the first robotic arm RA1 can place the wafer W while entering and descending at the first entry height EH1.

[0139] Next, as Figure 8 As shown, the first robotic arm RA1, which can receive the wafer W by entering at a height higher than the lifting pin 512 and placing the wafer W on the lifting pin 512, can receive the wafer W.

[0140] Next, as Figure 9 As shown, the lifting pin 512 can be lowered using an independent lifting device M so that the received wafer W can contact the clamping part 511. At this time, the first contact part 512a of the lifting pin 512 can be lowered to below the clamping height CH of the clamping part 511 so that the clamping part 511 can clamp the wafer W.

[0141] Next, as Figure 10 As shown, a vacuum pressure can be formed in the porous vacuum chuck 511b so that the wafer W in contact with the clamping part 511 can be clamped in the porous vacuum chuck 511b by the vacuum pressure, and the expansion ring 515 can be lowered below the clamping part 511 so as to avoid obstructing inspection.

[0142] Figures 11 to 16 It is shown in stages Figure 4 A diagram showing the process of the multi-stage device 510 in the second containment mode.

[0143] like Figure 11 as well as Figure 12 As shown, in the second receiving mode, the second robotic arm RA2 can enter the space between the extension ring 515 and the lifting block 513 so that the wafer ring WR with the cutting tape DT with the bare die D attached can be loaded onto the lifting block 513.

[0144] At this time, the second robotic arm RA2 can be formed as a whole into two second fingers F2 with a second separation distance S2 that is wider than the first separation distance S1, and the front of F2 is open in a U-shape so as not to interfere with the lifting pin 512 and the lifting block 513.

[0145] Here, the first robotic arm RA1 (refer to) Figure 6 ) and the second robotic arm RA2 (see reference) Figure 11 It can be formed from a transfer robot R1.

[0146] Here, for example, the lifting block 513 can rise to a second receiving height AH2 below the second entry height EH2 of the second robotic arm RA2 and stand by, so that the second robotic arm RA2 can place the wafer ring WR while entering and descending at a second entry height EH2 higher than the first entry height EH1. When the second robotic arm RA2 enters at the second entry height EH2, the extended contact portion 515a of the extended ring 515 can rise to a height above the second entry height EH2 and stand by, so that it does not interfere with the second robotic arm RA2.

[0147] At this time, the lifting block 513 can rise to a second accommodation height AH2 that is higher than the first accommodation height AH1 and standby, so that the wafer ring WR and the lifting pin 512 do not interfere with each other.

[0148] Next, as Figure 13 As shown, the second robotic arm RA2, which enters from a height above the lifting block 513, can receive the wafer ring WR and place it on the lifting block 513.

[0149] Next, as Figure 14 As shown, the lifting block 513 can be lowered once by using the independent lifting device M so that the cutting tape DT of the received wafer ring WR can come into contact with the clamping part 511.

[0150] At this time, the second contact portion 513a of the lifting block 513 can be lowered to below the clamping height CH of the clamping portion 511, so that the clamping portion 511 can clamp the cutting tape DT of the wafer ring WR.

[0151] Next, as Figure 15 As shown, the lifting block 513 can be lowered twice by using the independent lifting device M, so that the expansion ring 515 can stretch the cutting tape DT of the wafer ring WR.

[0152] Next, as Figure 16As shown, if the clamping part 511 contacts the cutting tape DT of the wafer ring WR, the extended contact part 515a of the extended ring 515 can contact the upper surface of the wafer ring WR and descend to below the clamping height CH of the clamping part 511, while fully stretching the cutting tape DT, forming a vacuum pressure in the porous vacuum chuck 511b, so that the cutting tape DT of the wafer ring WR can be clamped in the porous vacuum chuck 511b by the vacuum pressure.

[0153] Therefore, the operation of the multi-stage device 510 according to some embodiments of the present invention is described as follows: The system identifies whether the semiconductor material to be contained is a wafer W or a wafer ring WR through user instructions or programs. When the semiconductor material is a wafer W, as follows... Figures 6 to 10 As shown, the first containment mode can be executed when the semiconductor material is a wafer ring WR, such as Figures 11 to 16 As shown, the second containment mode can be executed.

[0154] That is, in the first containment mode, such as Figure 6 and Figure 7 As shown, the lifting pin 512 can be raised and put into standby mode using an independent lifting device M, so that the lifting pin 512 can receive the wafer W.

[0155] Next, as Figure 8 As shown, the first robotic arm RA1, which can receive the wafer W by entering at a height higher than the lifting pin 512 and placing the wafer W on the lifting pin 512, can receive the wafer W.

[0156] Next, as Figure 9 As shown, the lifting pin 512 can be lowered using an independent lifting device M so that the received wafer W can contact the clamping part 511, as... Figure 10 As shown, a vacuum pressure can ultimately be formed in the porous vacuum chuck 511b, so that the wafer W in contact with the clamping part 511 can be clamped in the porous vacuum chuck 511b by the vacuum pressure.

[0157] Conversely, in the second containment mode, such as Figure 11 as well as Figure 12 As shown, the lifting block 513 can be raised and put into standby mode using an independent lifting device M, so that the lifting block 513 can receive the wafer ring WR.

[0158] Next, as Figure 13 As shown, the second robotic arm RA2, which enters from a height above the lifting block 513, can receive the wafer ring WR and place it on the lifting block 513.

[0159] Next, as Figure 14As shown, the lifting block 513 can be lowered once by using the independent lifting device M so that the cutting tape DT of the received wafer ring WR comes into contact with the clamping part 511.

[0160] Next, as Figure 15 As shown, the lifting block 513 can be lowered twice by using the independent lifting device M, so that the expansion ring 515 can stretch the cutting tape DT of the wafer ring WR.

[0161] Next, as Figure 16 As shown, after the cutting tape DT is fully stretched, a vacuum pressure can be formed in the porous vacuum chuck 511b so that the cutting tape DT of the wafer ring WR can be clamped in the porous vacuum chuck 511b by the vacuum pressure.

[0162] Figure 17 This is a perspective view showing a multi-stage device 610 according to another embodiment of the present invention.

[0163] like Figure 17 As shown, the multi-stage device 610 according to another embodiment of the present invention may be omitted. Figure 4 The extended ring 515 and the first robotic arm RA1 (refer to) Figure 6 ) and the second robotic arm RA2 (see reference) Figure 11 It allows for more flexible loading and unloading of wafer W or wafer ring WR.

[0164] Figure 18 This is a plan view showing a multi-stage device 710 according to yet another embodiment of the present invention.

[0165] like Figure 18 As shown, according to another embodiment of the present invention, the lifting block 513 of the multi-stage device 710 may be provided on one side with a push rod PU that contacts the side of the wafer ring WR and an actuator AC that moves the push rod PU forward and backward, so that pressure can be applied to the side of the wafer ring WR placed on the second contact portion 513a for alignment.

[0166] Therefore, in the second accommodating mode, the control unit 570 (refer to...) Figure 1 as well as Figure 5 An alignment control signal can be applied to the actuator AC that moves the push rod PU forward and backward on the lifting block 513 so that if the lifting block 513 receives the wafer ring WR, the wafer ring WR can be aligned at the reference position.

[0167] Therefore, without the need to add a wafer ring alignment device, the received wafer ring WR can be aligned to the reference position by using the push rod PU and actuator AC installed on the lifting block 513.

[0168] Figure 19This is a perspective view showing a multi-stage device 810 according to yet another embodiment of the present invention.

[0169] Figure 19 As shown, the lifting block 513 of the multi-stage device 810 according to another embodiment of the present invention can form an inclined surface CF so that when the wafer ring WR is lowered by the second robotic arm RA2, it can contact the wafer ring WR and align the wafer ring WR.

[0170] Therefore, when the second robotic arm RA2 places the wafer ring WR on the second contact portion 513a of the lifting block 513, when the wafer ring WR deviates from the reference position, the wafer ring WR can interfere with the inclined surface CF and align itself while moving along the inclined surface CF towards the reference position.

[0171] Therefore, according to the present invention, it is possible to load or unload both wafers W and wafer rings WR of two semiconductor materials using a lifting structure that is lifted by a clamping part 511 and an independent lifting device M. After accommodating the wafer rings WR, stable inspection can be achieved by preventing bubble phenomena or wrinkles with extended functions, etc. It is possible to automatically align the wafer rings WR to the reference position. It can be applied to the inspection module 500 of the die bonding apparatus 10, and can also be applied to various other stage modules, cleaning modules, transfer modules, bonding modules, etc. that can operate both wafers W and wafer rings WR, in addition to the inspection module 500.

[0172] Figure 20 This is a flowchart illustrating a control method for a multi-stage device according to a partial embodiment of the present invention.

[0173] like Figures 1 to 20 As shown, the control method of a multi-stage device according to some embodiments of the present invention may generally include: (a) identifying whether the semiconductor material to be contained is a wafer W or a wafer ring WR; (b) when the semiconductor material is a wafer W, executing a first containment mode; and (c) when the semiconductor material is a wafer ring WR, executing a second containment mode.

[0174] (b) The steps may include: (b-1) in the first receiving mode, raising the lifting pin 512 using the independent lifting device M and putting it into standby mode so that the lifting pin 512 can receive the wafer W; (b-2) receiving the wafer W from the first robotic arm RA1, which enters at a height higher than the lifting pin 512 and places the wafer W on the lifting pin 512; (b-3) lowering the lifting pin 512 using the independent lifting device M so that the received wafer W can contact the clamping part 511; and (b-4) forming a vacuum pressure in the porous vacuum chuck 511b so that the wafer W in contact with the clamping part 511 can be clamped in the porous vacuum chuck 511b by the vacuum pressure.

[0175] (c) The steps may include: (c-1) in the second receiving mode, raising the lifting block 513 using the independent lifting device M and idling so that the lifting block 513 can receive the wafer ring WR; (c-2) receiving the wafer ring WR from the second robotic arm RA2, which enters at a height higher than the lifting block 513 and places the wafer ring WR on the lifting block 513; (c-3) lowering the lifting block 513 once using the independent lifting device M so that the cut tape DT of the received wafer ring WR can contact the clamping part 511; (c-4) lowering the lifting block 513 a second time using the independent lifting device M so that the expansion ring 515 can stretch the cut tape DT of the wafer ring WR; and (c-5) after the cut tape DT is fully stretched, forming a vacuum pressure in the porous vacuum chuck 511b so that the cut tape DT of the wafer ring WR can be clamped in the porous vacuum chuck 511b by the vacuum pressure.

[0176] Figure 21 This is a flowchart illustrating a control method for a multi-stage device according to another embodiment of the present invention.

[0177] like Figures 1 to 21 As shown, the control method of a multi-stage device according to another embodiment of the present invention may generally include: (a) identifying whether the semiconductor material to be contained is a wafer W or a wafer ring WR; (b) when the semiconductor material is a wafer W, performing a first containment mode; and (c) when the semiconductor material is a wafer ring WR, performing a second containment mode.

[0178] (b) The steps may include: (b-1) in the first receiving mode, raising the lifting pin 512 using the independent lifting device M and putting it into standby mode so that the lifting pin 512 can receive the wafer W; (b-2) receiving the wafer W from the first robotic arm RA1, which enters at a height higher than the lifting pin 512 and places the wafer W on the lifting pin 512; (b-3) lowering the lifting pin 512 using the independent lifting device M so that the received wafer W can contact the clamping part 511; and (b-4) forming a vacuum pressure in the porous vacuum chuck 511b so that the wafer W in contact with the clamping part 511 can be clamped in the porous vacuum chuck 511b by the vacuum pressure.

[0179] (c) The steps may include: (c-1) in the second receiving mode, raising the lifting block 513 using the independent lifting device M and idling so that the lifting block 513 can receive the wafer ring WR; (c-2) receiving the wafer ring WR from the second robotic arm RA2, which enters at a height higher than the lifting block 513 and places the wafer ring WR on the lifting block 513; (c-6) aligning the received wafer ring WR to a reference position using the actuator AC, which is provided on the lifting block 513 and contacts the side of the wafer ring WR, and moves the push rod PU forward and backward. -3) The step of lowering the lifting block 513 once using the independent lifting device M so that the received wafer ring WR cutting tape DT can contact the clamping part 511; (c-4) The step of lowering the lifting block 513 a second time using the independent lifting device M so that the expansion ring 515 can stretch the wafer ring WR cutting tape DT; and (c-5) After the cutting tape DT is fully stretched, a vacuum pressure is formed in the porous vacuum chuck 511b so that the wafer ring WR cutting tape DT can be clamped in the porous vacuum chuck 511b by the vacuum pressure.

[0180] On the other hand, such as Figures 1 to 21 As shown, the die bonding apparatus 10 according to some embodiments of the present invention may include bonding modules 100, 102 for bonding a second semiconductor material 2 to a first semiconductor material 1, a loading port 200 supporting and housing containers 50, 52 containing the first semiconductor material 1 or the second semiconductor material 2, transfer modules 400, 410 provided with transfer robots R1, R2 for transferring the first semiconductor material 1 or the second semiconductor material 2 from the containers 50, 52 to the bonding modules 100, 102, and an inspection module 500 that can be used to inspect both the first semiconductor material 1 and the second semiconductor material 2.

[0181] Here, the inspection module 500 may include a multi-stage device 510 that can accommodate both the first semiconductor material 1 and the second semiconductor material 2, and an inspection camera 530 that can photograph both the first semiconductor material 1 and the second semiconductor material 2 to perform foreign object inspection or condition inspection.

[0182] Additionally, the multi-stage device 510 may include: a clamping portion 511 capable of clamping a first semiconductor material 1 or a second semiconductor material 2; a first receiving portion A1, formed corresponding to at least a portion of the first semiconductor material 1 to allow the first semiconductor material 1 to be received from the first robotic arm RA1, configured to be able to move up and down with respect to the clamping portion 511 so that the received first semiconductor material 1 can be clamped in the clamping portion 511; and a second receiving portion A2, formed corresponding to at least a portion of the second semiconductor material 2 to allow the second semiconductor material 2 to be received from the second robotic arm RA2, configured to be able to move up and down with respect to the clamping portion 511 so that the received second semiconductor material 2 can be clamped in the clamping portion 511.

[0183] Here, as Figures 4 to 19 As shown, the multi-stage device 510 can have the same structure and function as the multi-stage device 510 described above. Therefore, detailed description is omitted.

[0184] The present invention has been described with reference to the embodiments shown in the accompanying drawings, but these are merely exemplary. Those skilled in the art will understand that various modifications and equivalent embodiments are possible. Therefore, the true scope of protection of the present invention should be determined by the technical concept of the appended claims.

Claims

1. A multi-stage device, comprising: The clamping part is capable of clamping either a first semiconductor material or a second semiconductor material; A first receiving portion is formed corresponding to at least a portion of the first semiconductor material to enable the first semiconductor material to be received from the first robotic arm, and is configured to be able to be raised and lowered relative to the clamping portion so that the received first semiconductor material can be clamped in the clamping portion. as well as The second receiving portion is formed corresponding to at least a portion of the second semiconductor material to enable the second semiconductor material to be received from the second robotic arm, and is configured to be able to move up and down relative to the clamping portion so that the received second semiconductor material can be clamped in the clamping portion.

2. The multi-stage device according to claim 1, wherein, The size of the first semiconductor material is larger than the size of the second semiconductor material. The first receiving portion extends at least partially through the interior of the clamping portion and forms at least one, At least one of the second receiving portions is disposed around the outer periphery of the clamping portion.

3. The multi-stage device according to claim 2, wherein, The first semiconductor material includes a wafer. The second semiconductor material includes a wafer ring that supports a wafer or a diced die using a dicing tape.

4. The multi-stage device according to claim 3, wherein, The first receiving portion includes at least one lifting pin, the lifting pin being formed such that at least a portion passes through the clamping portion and is capable of moving up and down to support the bottom of the wafer. The second receiving portion includes at least one lifting block formed on top of a frame that is spaced apart from the clamping portion and forms a ring around the clamping portion, so as to support the sides and bottom of the wafer ring.

5. The multi-stage device according to claim 4, wherein, The frame and the lifting pin are connected to each other so that the lifting pin and the lifting block can be raised and lowered together using a separate lifting device.

6. The multi-stage device according to claim 4, wherein, The lifting pins are three lifting pins arranged at equal angles at 120-degree intervals on the upper part of the clamping part. The lifting blocks are three lifting blocks arranged at equal angles of 90 degrees with respect to the clamping part, except for one position that interferes with the entry of the second robotic arm.

7. The multi-stage device according to claim 4, wherein, The lifting pin has a first contact portion and is generally formed in the shape of a cylindrical pin. The first contact portion can rise to a first receiving height lower than the first entry height of the first robotic arm and standby, so that the first robotic arm can place the wafer while entering and descending at the first entry height, and can descend to below the clamping height of the clamping portion, so that the clamping portion can clamp the wafer. The lifting block has a second contact portion and is generally formed in the shape of a polyhedral block. The second contact portion can rise to a second receiving height lower than the second entry height of the second robotic arm and stand by, so that the second robotic arm can place the wafer ring while entering and descending at a second entry height higher than the first entry height, and can rise to a second receiving height higher than the first receiving height and stand by, so that the wafer ring does not interfere with the lifting pin, and can descend to a position below the clamping height of the clamping portion, so that the clamping portion can clamp the cutting tape of the wafer ring.

8. The multi-stage device according to claim 7, wherein, The lifting block is provided with a push rod on one side that contacts the side of the wafer ring and an actuator that moves the push rod forward and backward, so that pressure can be applied to the side of the wafer ring placed on the second contact portion for alignment.

9. The multi-stage device according to claim 7, wherein, The lifting block has an inclined surface so that it can contact and align with the wafer ring when the second robotic arm lowers the wafer ring.

10. The multi-stage device according to claim 4, wherein, The second receiving portion further includes: An extension ring is formed above the lifting block and forcibly stretches the cutting tape as it descends and contacts the top of the wafer ring. This prevents air bubbles or wrinkles from occurring between the cutting tape and the clamping part when the lifting block descends and the cutting tape of the wafer ring contacts the clamping part.

11. The multi-stage device according to claim 10, wherein, The extended ring has an extended contact portion and is generally formed into a circular ring shape with a through window at the center having an inner diameter larger than that of the clamping portion. When the second robotic arm enters at a second entry height, the extended contact portion can rise to a height above the second entry height to standby, so as not to interfere with the second robotic arm. If the clamping portion contacts the cutting tape of the wafer ring, the extended contact portion can contact the top of the wafer ring and descend to below the clamping height of the clamping portion.

12. The multi-stage device according to claim 11, wherein, The clamping part includes a porous vacuum chuck with pin holes to allow the lifting pin to move up and down, and is connected to a vacuum line equipped with a vacuum valve and a vacuum pump to create a vacuum pressure above the area except for the pin holes.

13. The multi-stage device according to claim 12, wherein, The multi-stage device also includes: In the first receiving mode, the control unit applies an upward control signal to the independent lifting device so that the lifting pin can receive the wafer, applies a downward control signal to the independent lifting device so that the received wafer can contact the clamping part, and applies an opening signal to the vacuum valve so that the wafer in contact with the clamping part can be clamped in the porous vacuum chuck by vacuum pressure.

14. The multi-stage device according to claim 13, wherein, In the second receiving mode, the control unit applies an upward control signal to the independent lifting device so that the lifting block can receive the wafer ring, and applies a first downward control signal to the independent lifting device so that the dicing tape of the received wafer ring can contact the clamping part, and applies a second downward control signal to the independent lifting device so that the extension ring can stretch the dicing tape of the wafer ring, and after the dicing tape is fully stretched, applies an opening signal to the vacuum valve so that the dicing tape of the wafer ring can be clamped in the porous vacuum chuck by vacuum pressure.

15. The multi-stage device according to claim 14, wherein, In the second receiving mode, if the lifting block receives the wafer ring, the control unit applies an alignment control signal to an actuator that causes a push rod disposed on the lifting block and in contact with the side of the wafer ring to move forward and backward, so that the wafer ring can be aligned to a reference position.

16. The multi-stage device according to claim 4, wherein, The first robotic arm is generally shaped like a U with two first fingers spaced a first distance apart and open in front, so as not to interfere with the lifting pin. The second robotic arm is generally formed in a U-shape with two second fingers open in front, having a second spacing distance longer than the first spacing distance, so as to avoid interference with the lifting pin and the lifting block. The first robotic arm and the second robotic arm are formed within a transfer robot.

17. A control method for a multi-stage device, comprising: (a) The steps to identify whether the semiconductor material to be contained is a wafer or a wafer ring; (b) When the semiconductor material is a wafer, the steps of the first accommodating mode are performed; as well as (c) When the semiconductor material is a wafer ring, the steps of the second containment mode are performed. Step (b) includes: (b-1) In the first receiving mode, the lifting pin is raised and put into standby mode using an independent lifting device so that the lifting pin can receive the wafer. (b-2) The step of receiving the wafer from a first robotic arm that enters at a height above the lifting pin and places the wafer on the lifting pin; (b-3) The step of lowering the lifting pin using the independent lifting device so that the received wafer can contact the clamping part; and (b-4) The step of forming a vacuum pressure in a porous vacuum chuck so that the wafer in contact with the clamping part can be clamped in the porous vacuum chuck by the vacuum pressure.

18. The control method for a multi-stage device according to claim 17, wherein, Step (c) includes: (c-1) In the second receiving mode, the lifting block is raised and put into standby mode using the separate lifting device so that the lifting block can receive the wafer ring; (c-2) The step of receiving the wafer ring from a second robotic arm that enters at a height above the lifting block and places the wafer ring on the lifting block; (c-3) The step of using the independent lifting device to lower the lifting block once so that the cut tape of the received wafer ring can contact the clamping part; (c-4) The step of using the independent lifting device to lower the lifting block a second time so that the expansion ring can stretch the cutting tape of the wafer ring; and (c-5) After the cutting tape is fully stretched, a vacuum pressure is formed in the porous vacuum chuck so that the cutting tape of the wafer ring can be clamped in the porous vacuum chuck by the vacuum pressure.

19. The control method for a multi-stage device according to claim 18, wherein, The process includes the following steps after step (c-2): (c-6) The step of aligning the received wafer ring to a reference position by means of an actuator that moves a push rod in contact with the side of the wafer ring forward and backward by means of an actuator provided on the lifting block.

20. A die bonding apparatus, comprising: A bonding module bonds a second semiconductor material onto a first semiconductor material; A loading port supports a container holding the first semiconductor material or the second semiconductor material; The transfer module is equipped with a transfer robot that transfers the first semiconductor material or the second semiconductor material from the container to the bonding module; as well as The inspection module can be used to inspect both the first semiconductor material and the second semiconductor material. The inspection module includes: A multi-stage device capable of accommodating both the first semiconductor material and the second semiconductor material; and The camera can be used to inspect both the first and second semiconductor materials for foreign object or condition checks. The multi-stage device includes: The clamping part is capable of clamping the first semiconductor material or the second semiconductor material; A first receiving portion is formed corresponding to at least a portion of the first semiconductor material to enable the receiving of the first semiconductor material from a first robotic arm, and is configured to be able to move up and down relative to the clamping portion so that the received first semiconductor material can be clamped in the clamping portion; and The second receiving portion is formed corresponding to at least a portion of the second semiconductor material to enable the second semiconductor material to be received from the second robotic arm, and is configured to be able to move up and down relative to the clamping portion so that the received second semiconductor material can be clamped in the clamping portion.

Images