Multi-position rapid adsorption mechanism for improving yield of silicon wafers and operation method

Abstract

The invention discloses a multi-position rapid adsorption mechanism for improving the yield of silicon wafers and an operation method, and relates to the technical field of semiconductor chip manufacturing, and the multi-position rapid adsorption mechanism comprises a vacuum pump, a plurality of suckers used for adsorbing the same silicon wafer, a gas circuit buffer shunting mechanism and a branch pipe dynamic pressure regulating mechanism. According to the invention, by arranging the gas path buffering and shunting mechanism and the branch pipe dynamic pressure regulating mechanism, the gas path buffering and shunting mechanism realizes initial homogenization of gas flow by using equal-diameter and equal-length flow channels of a multi-channel shunting interface, the gas flow is divided by honeycomb holes of a gas flow rectifying plate to form parallel gas flow beams, and gas flow inertial impact is eliminated through a gas path buffering pipe; the branch pipe dynamic pressure regulating mechanism collects negative pressure data near the suction cup in real time through a pressure sensor, so that the negative pressure establishment rate and the negative pressure value of each adsorption point position are kept highly consistent, the adsorption force applied to the silicon wafer is uniformly distributed, micro-warping stress is not generated, the generation probability of hidden crystal cracks is greatly reduced, the processing yield of the silicon wafer is remarkably improved, and the production cost is reduced. And the rapidity and the accuracy of adsorption are both considered.

Description

Technical Field

[0001] This invention relates to the field of semiconductor chip manufacturing technology, and in particular to a multi-position rapid adsorption mechanism and operating method for improving silicon wafer yield. Background Technology

[0002] In the semiconductor chip manufacturing field, silicon wafers are the core substrate, and their stable fixation during processing is a crucial prerequisite for ensuring precision. Multi-position silicon wafer adsorption mechanisms, with their advantage of simultaneous fixation at multiple points, are widely used in core processes such as photolithography, dicing, and grinding. The core working logic of this type of mechanism is to use an integrated main gas path branched into multiple branch pipes to transmit the vacuum suction force of the vacuum pump to each adsorption point, achieving rapid and stable adsorption of the silicon wafer. However, existing multi-position rapid adsorption mechanisms for silicon wafers still have the following shortcomings during use: For example, Chinese patent CN 103904013 A discloses a vacuum adsorption device and an adsorption calibration method. The vacuum adsorption device has vacuum grooves arranged in a dispersed manner on the disk body, which can greatly improve the adsorption between the silicon wafer and the vacuum adsorption device, and avoid air leakage in the vacuum groove due to unevenness of the silicon wafer. This avoids the problem of poor adsorption of silicon wafers in the prior art. At the same time, the adsorption calibration method ensures that at least 3 points can be firmly adsorbed in actual production, thereby ensuring the reliability of adsorption. Furthermore, the degree of warpage of the silicon wafer can be automatically identified based on the values ​​of each sensor.

[0003] While the aforementioned devices have solved the adsorption reliability problem of warped silicon wafers and avoided the risk of leakage through dispersed vacuum chambers and calibration methods, they still fail to address the issue of pressure difference imbalance due to gas path coupling in multi-location rapid adsorption scenarios. Specifically, existing adsorption devices employ a gas path structure with multiple branches branching from a main pipeline, but they fail to consider the unavoidable slight tolerances in length and bending angle of each branch during manufacturing. When the vacuum pump rapidly supplies gas to achieve rapid adsorption, the rapid airflow creates differential gas resistance in different branches. This difference in gas resistance directly leads to different negative pressure build-up rates at each adsorption point, resulting in a deviation in negative pressure value. Moreover, this deviation is not a fixed value but fluctuates dynamically with the start and stop of the adsorption process. For ultra-thin monocrystalline silicon substrates, this slight negative pressure difference causes uneven adsorption adhesion force in different areas of the silicon wafer, thereby generating invisible micro-warping stress. This stress will be gradually released during subsequent processing steps such as cutting and grinding, eventually forming hidden crystal cracks in the silicon wafer. Moreover, such micron-level hidden defects are difficult to identify in real time through existing detection methods during the processing, directly leading to a decrease in the yield of silicon wafer processing. Summary of the Invention

[0004] The purpose of this application is to provide a multi-position rapid adsorption mechanism and operation method for improving silicon wafer yield, which can effectively solve the problems mentioned in the background art.

[0005] To achieve the above objectives, this application provides the following technical solution: a multi-position rapid adsorption mechanism for improving silicon wafer yield, comprising a vacuum pump and multiple suction cups for adsorbing the same silicon wafer; the multi-position rapid adsorption mechanism for improving silicon wafer yield further includes an air path buffer diversion mechanism and a branch pipe dynamic pressure adjustment mechanism; the air path buffer diversion mechanism is disposed between the vacuum pump and the suction cups; the branch pipe dynamic pressure adjustment mechanism is disposed between the suction cups and the air path buffer diversion mechanism, and is used to adjust the branch pressure difference between each suction cup and the air path buffer diversion mechanism; the air path buffer diversion mechanism includes: a multi-channel diversion interface, an air path buffer tube, and an airflow straightener. The system comprises a flow plate; wherein the multi-channel ports of the multi-channel diversion interface are respectively connected to the connecting pipes on each suction cup; the air path buffer tube is fixed to the fixed base, one end of the air path buffer tube is connected to the connecting pipes on each suction cup through the multi-channel diversion interface, and the other end of the air path buffer tube is connected to the main air path of the vacuum pump through a flange; the airflow rectifier plate is disposed between the multi-channel diversion interface and the air path buffer tube, and the airflow rectifier plate is provided with multiple honeycomb holes; when the airflow enters the air path buffer tube from the multiple channels of the multi-channel diversion interface, the airflow is allowed to be divided into multiple parallel airflow bundles through the honeycomb holes.

[0006] Preferably, a first retaining sleeve is coaxially provided on both sides of the airflow rectifier plate; and both sides of the airflow rectifier plate are coaxially connected to the multi-channel diversion interface and the air path buffer tube respectively through the first retaining sleeve; a sealing gasket is provided inside the first retaining sleeve to prevent airflow from leaking from the position of the first retaining sleeve.

[0007] Preferably, the inner diameter of the air buffer tube is three times the inner diameter of the connecting tube.

[0008] Preferably, each connecting pipe connected to the suction cup is provided with a branch pipe dynamic pressure regulating mechanism; the branch pipe dynamic pressure regulating mechanism includes a miniature electromagnetic pressure regulating valve and a pressure sensor; the miniature electromagnetic pressure regulating valve and the pressure sensor are both installed on the connecting pipe, and the miniature electromagnetic pressure regulating valve is located on the side away from the suction cup, and the pressure sensor is located on the side closer to the suction cup.

[0009] Preferably, the multi-position rapid adsorption mechanism for improving silicon wafer yield further includes a differential pressure real-time monitoring and feedback mechanism; the differential pressure real-time monitoring and feedback mechanism includes a central controller and a differential pressure early warning device; the central controller and the differential pressure early warning device are both integrated in the electrical control cabinet of the differential pressure real-time monitoring and feedback mechanism; the differential pressure early warning device, the miniature electromagnetic pressure regulating valve, and the pressure sensor are all connected to the central controller via signal control.

[0010] Preferably, the multi-position rapid adsorption mechanism for improving silicon wafer yield further includes a suction cup position adjustment mechanism; the suction cup position adjustment mechanism is used to adjust the position between each suction cup to adapt to the adsorption of silicon wafers of different sizes.

[0011] Preferably, the suction cup position adjustment mechanism includes a mounting base, a motor, a belt, an adjusting shaft, a pair of pulleys, a guide shaft, multiple slides, and a slider; the fixed base is fixed to the mounting base; the motor is mounted on the mounting base, both of the pulleys are rotatably connected to the mounting base around their axes, and the output shaft of the motor is coaxially connected to one of the pulleys; the belt is tensioned on the pair of pulleys; the adjusting shaft is rotatably connected to the mounting base around its axis, and one end of the adjusting shaft is coaxially connected to one of the pulleys; the pair of guide shafts are fixed to the mounting base with their length direction parallel to the axis of the adjusting shaft; the slides are slidably connected to the guide shafts along the axis of the adjusting shaft; multiple grooves are provided on the adjusting shaft; the slider is fixed to the slide, and the slide is slidably connected to the grooves through the slider; multiple suction cups are respectively fixed to multiple corresponding slides; when the adjusting shaft rotates, the suction cups on the multiple slides are driven to move closer or further apart by the guidance of the guide shaft and the cooperation of the grooves and the slider.

[0012] Preferably, the connecting pipe is connected to the slide via a mounting bracket; a corrugated hose is provided between the connecting pipe and the multi-channel diversion interface; when the suction cup position adjustment mechanism drives multiple suction cups to move, the corrugated hose maintains the connection between the suction cups and the vacuum pump.

[0013] Preferably, a return spring is fitted on the corrugated section of the corrugated hose so that the corrugated hose remains taut along the length of the corrugated hose during the expansion and contraction process.

[0014] A multi-position rapid adsorption operation method for improving silicon wafer yield, employing the aforementioned multi-position rapid adsorption mechanism for improving silicon wafer yield; specifically including the following steps: Step 1: Branch air resistance pre-compensation adjustment: Based on the actual length differences of each branch, pre-adjust the air pressure in each branch. For branches with longer lengths, increase the branch flow orifice diameter to reduce throttling resistance and compensate for the increase in air resistance caused by the length. For branches with shorter lengths, decrease the branch flow orifice diameter to slightly increase air resistance and avoid excessive airflow inertia, so as to achieve uniform basic air resistance. Step 2, Airflow Buffering and Diversion: After dynamic pressure regulation in the branch pipes, the airflow converges into the airflow buffering and diversion mechanism to complete the core airflow treatment. The airflow first passes through the equal-diameter and equal-length flow channels of the connecting pipes and multi-channel diversion interfaces to achieve initial air resistance homogenization of the airflow in each branch pipe, eliminating the basic influence of pipe tolerances. Then, the airflow is divided into multiple uniform-velocity fine streams by the honeycomb holes of the airflow rectifier plate, completely eliminating eddies and turbulence, and achieving secondary uniformization of flow velocity. Then, the airflow enters the airflow buffer pipe. Due to the increase in cavity volume, the airflow velocity drops sharply, completely eliminating the inertial impact of the rapidly pumped airflow and forming a stable laminar airflow. The stable laminar flow enters the vacuum pump through the main air path, completing the entire process of the converged airflow treatment.

[0015] In summary, the technical effects and advantages of this invention are as follows: 1. This invention incorporates an airflow buffer and diversion mechanism and a branch pipe dynamic pressure regulation mechanism. The airflow buffer and diversion mechanism utilizes equal-diameter and equal-length flow channels in the multi-channel diversion interface to achieve initial airflow homogenization. The airflow is divided into parallel airflow bundles by the honeycomb holes of the airflow rectifier plate, and then the airflow inertial impact is dissipated by the airflow buffer tube. The branch pipe dynamic pressure regulation mechanism collects negative pressure data near the suction cup in real time through a pressure sensor, ensuring that the negative pressure establishment rate and negative pressure value at each adsorption point remain highly consistent. The adsorption force on the silicon wafer is evenly distributed, preventing micro-warping stress and significantly reducing the probability of hidden crystal cracks. This significantly improves the silicon wafer processing yield and balances the speed and accuracy of adsorption.

[0016] 2. This invention establishes a real-time differential pressure monitoring and feedback mechanism. Its core central controller collects negative pressure data from all pressure sensors in real time and analyzes the differential pressure of each branch pipe. When the differential pressure exceeds the preset range, it immediately sends a correction command to the corresponding miniature electromagnetic pressure regulating valve. The differential pressure early warning device issues an early warning signal in a timely manner when the differential pressure continues to exceed the standard, ensuring that the global pressure balance remains stable, effectively preventing damage to batch silicon wafers, improving production stability, and providing a reliable basis for process optimization in real time, which greatly improves operation and maintenance efficiency.

[0017] 3. This invention incorporates a suction cup position adjustment mechanism and a corrugated hose. The suction cup position adjustment mechanism is driven by a motor to rotate the pulley and adjustment shaft. Through the cooperation of the sliding groove and the slider, it drives the sliding block and suction cup to move precisely. The corrugated hose expands and contracts with the suction cup to adapt to changes in branch length. The return spring on its corrugated section keeps the hose taut and smooth along its length. This allows the mechanism to flexibly adapt to the processing requirements of silicon wafers of different sizes without replacing the entire adsorption assembly, greatly improving equipment utilization. At the same time, the airtightness and flow of the air path remain stable, and the pressure balance is not affected during size switching, enhancing production flexibility and continuity. Attached Figure Description

[0018] To more clearly illustrate the technical solutions in the embodiments of this application or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0019] Figure 1 This is a first-view overall three-dimensional structural diagram of the present invention; Figure 2 This is a schematic diagram of the overall three-dimensional structure of the present invention from a second perspective; Figure 3This is a partially cross-sectional, three-dimensional enlarged structural diagram of the gas path buffer diversion mechanism of the present invention; Figure 4 This is a three-dimensional enlarged structural schematic diagram of the airflow rectifier plate of the present invention; Figure 5 This is a three-dimensional enlarged structural schematic diagram of the branch pipe dynamic pressure regulating mechanism of the present invention; Figure 6 This is a three-dimensional enlarged structural schematic diagram of the suction cup position adjustment mechanism of the present invention; Figure 7 For the present invention Figure 6 Enlarged structural diagram of region A in the middle; Figure 8 This is a three-dimensional enlarged structural diagram of the slide block of the present invention; Figure 9 This is a three-dimensional enlarged structural schematic diagram of the adjusting shaft of the present invention; Figure 10 This is a flowchart of the method of the present invention.

[0020] In the diagram: 1. Suction cup; 2. Air path buffer and diversion mechanism; 21. Connecting pipe; 22. Fixed base; 23. Multi-channel diversion interface; 24. Air path buffer pipe; 25. Airflow rectifier plate; 26. Honeycomb hole; 27. First ferrule; 28. Sealing gasket; 3. Branch pipe dynamic pressure adjustment mechanism; 31. Mounting bracket; 32. Miniature electromagnetic pressure regulating valve; 33. Pressure sensor; 4. Suction cup position adjustment mechanism; 41. Mounting base; 42. Motor; 43. Pulley; 44. Belt; 45. Adjusting shaft; 46. Slide groove; 47. Guide shaft; 48. Slide seat; 49. Slider; 410. Corrugated hose. Detailed Implementation

[0021] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0022] Example 1: Please refer to Figures 1-5The multi-position rapid adsorption mechanism for improving silicon wafer yield, as shown, includes a vacuum pump and multiple suction cups 1 for adsorbing the same silicon wafer. The mechanism also includes an air path buffer and diversion mechanism 2 and a branch pipe dynamic pressure regulating mechanism 3. The air path buffer and diversion mechanism 2 is located between the vacuum pump and the suction cups 1. It is understood that the vacuum pump is existing technology and is not shown in the figure; therefore, it will not be described in detail. The branch pipe dynamic pressure regulating mechanism 3 is located between the suction cups 1 and the air path buffer and diversion mechanism 2, and is used to adjust the branch pressure difference between each suction cup 1 and the air path buffer and diversion mechanism 2. The air path buffer and diversion mechanism 2 includes a multi-channel diversion interface 23, an air path buffer tube 24, and an airflow rectifier plate 2. 5; wherein, the multi-channel ports of the multi-channel diversion interface 23 are respectively connected to the connecting pipes 21 on each suction cup 1; the air path buffer pipe 24 is fixed on the fixed base 22, one end of the air path buffer pipe 24 is connected to the connecting pipes 21 on each suction cup 1 through the multi-channel diversion interface 23, and the other end of the air path buffer pipe 24 is connected to the main air path of the vacuum pump through a flange; the airflow rectifier plate 25 is disposed between the multi-channel diversion interface 23 and the air path buffer pipe 24, and multiple honeycomb holes 26 are opened on the airflow rectifier plate 25; when the airflow enters the air path buffer pipe 24 from the multiple channels of the multi-channel diversion interface 23, it is allowed to divide the airflow into multiple parallel airflow bundles through the honeycomb holes 26.

[0023] It should be noted that during operation, after the vacuum pump starts, a reverse negative pressure suction field is formed. Gas enters the suction cup 1 from between the silicon wafer adsorption surface and the suction cup 1, and then flows to the branch pipe dynamic pressure regulating mechanism 3 through the connecting pipe 21. After the branch pipe dynamic pressure regulating mechanism 3 initially adjusts the air pressure of the single branch pipe, the airflow merges into the multi-channel diversion interface 23 of the air path buffer diversion mechanism 2. After being guided by the equal diameter and equal length flow channels of the multi-channel diversion interface 23, the airflow flows to the airflow rectifier plate 25. It is divided into multiple parallel airflow streams through multiple honeycomb holes 26 on the airflow rectifier plate 25, and then the airflow enters the air path buffer pipe 24 fixed to the fixed base 22. After the airflow completes the velocity attenuation and inertia dissipation in the air path buffer pipe 24, it forms a stable laminar airflow, which enters the vacuum pump through the main air path connected by the flange, continuously providing a stable negative pressure for the suction cup 1, realizing rapid adsorption of the silicon wafer at multiple positions.

[0024] Through the coordinated operation of the airflow buffer and diversion mechanism 2 and the branch pipe dynamic pressure regulating mechanism 3, the negative pressure build-up rate at each adsorption point remains highly consistent, and the negative pressure deviation is kept within a very small range. The honeycomb holes 26 of the airflow rectifier plate 25 can effectively regulate the airflow direction, and the airflow buffer pipe 24 can fully dissipate the inertial impact of the airflow, so that the airflow always maintains a stable laminar flow state. The suction cup 1 has a uniform adsorption force on the silicon wafer, and no micro-warping stress is generated on the surface of the ultra-thin silicon wafer. The probability of the occurrence of hidden crystal cracks is greatly reduced, and the silicon wafer processing yield is significantly improved.

[0025] See Figures 3-4 Both sides of the airflow rectifier plate 25 are coaxially provided with first retaining sleeves 27; and both sides of the airflow rectifier plate 25 are coaxially connected to the multi-channel diversion interface 23 and the air path buffer tube 24 respectively through the first retaining sleeves 27; a sealing gasket 28 is provided inside the first retaining sleeve 27 to prevent airflow from leaking from the position of the first retaining sleeve 27.

[0026] It should be noted that the two sides of the airflow rectifier plate 25 are precisely connected to the multi-channel diversion interface 23 and the air path buffer tube 24 respectively through the coaxially arranged first retaining sleeve 27, ensuring that the airflow rectifier plate 25 is completely aligned with the central axis of the air path. The sealing gasket 28 inside the first retaining sleeve 27 tightly fits the contact surface between the airflow rectifier plate 25 and the connecting component. After the airflow flows out from the multi-channel diversion interface 23, it is guided by the first retaining sleeve 27 into the honeycomb holes 26 of the airflow rectifier plate 25, and then flows smoothly into the air path buffer tube 24 through the other side of the first retaining sleeve 27, without any airflow leakage or turning disturbance throughout the process.

[0027] See Figures 1-3 The inner diameter of the air path buffer tube 24 is three times that of the inner diameter of the connecting tube 21. It should be noted that because the inner diameter of the air path buffer tube 24 is three times that of the connecting tube 21, the flow space expands instantaneously after the airflow enters the air path buffer tube 24 from the connecting tube 21. The high-speed airflow generated by the reverse suction diffuses fully within the air path buffer tube 24, causing a sharp decrease in velocity. The inertial impact force it originally carried is completely weakened, and the airflow flows slowly and mixes thoroughly within the air path buffer tube 24, forming a uniform laminar flow state before flowing into the main air path.

[0028] The size design of the airflow buffer tube 24 optimizes the dissipation of airflow inertial impact, maintaining a stable airflow velocity within the tube without localized pressure fluctuations. The larger inner diameter provides ample buffering and mixing space for the airflow, allowing the airflows from each branch to fully merge and achieve near-uniform pressure.

[0029] See Figure 1 and Figure 5 Each connecting pipe 21 connected to the suction cup 1 is equipped with a branch pipe dynamic pressure regulating mechanism 3; the branch pipe dynamic pressure regulating mechanism 3 includes a miniature electromagnetic pressure regulating valve 32 and a pressure sensor 33; the miniature electromagnetic pressure regulating valve 32 and the pressure sensor 33 are both installed on the connecting pipe 21, and the miniature electromagnetic pressure regulating valve 32 is located on the side away from the suction cup 1, and the pressure sensor 33 is located on the side close to the suction cup 1.

[0030] It should be noted that when the pressure sensor 33 detects that the negative pressure value of a certain branch pipe is too high, the micro electromagnetic pressure regulating valve 32 reduces its opening; when the negative pressure value is detected to be too low, the micro electromagnetic pressure regulating valve 32 increases its opening. By precisely adjusting the air resistance of the branch, the negative pressure value of each branch is kept consistent.

[0031] The installation position of pressure sensor 33 near suction cup 1 ensures that the collected negative pressure data accurately reflects the actual adsorption state of the silicon wafer, and the rapid response of miniature electromagnetic pressure regulating valve 32 allows for timely correction of branch pressure deviations. The negative pressure build-up rate and negative pressure value of each branch remain highly consistent, the adsorption force on the silicon wafer is uniform and consistent, and the positional stability during processing is greatly improved.

[0032] See Figures 1-2 The multi-position rapid adsorption mechanism for improving silicon wafer yield also includes a differential pressure real-time monitoring and feedback mechanism; the differential pressure real-time monitoring and feedback mechanism includes a central controller and a differential pressure early warning device; the central controller and the differential pressure early warning device are both integrated in the electrical control cabinet of the differential pressure real-time monitoring and feedback mechanism; the differential pressure early warning device, the miniature electromagnetic pressure regulating valve 32 and the pressure sensor 33 are all connected to the central controller via signal control; it is understood that the differential pressure early warning device, the miniature electromagnetic pressure regulating valve 32, the pressure sensor 33, the central controller and the electrical control cabinet are all existing technologies. Among them, the differential pressure early warning device, the central controller and the electrical control cabinet are not shown in the figure and will not be described in detail.

[0033] It should be noted that the central controller establishes signal connections with all pressure sensors 33 and miniature electromagnetic pressure regulating valves 32, collects and analyzes the negative pressure data of each branch pipe in real time, and calculates the negative pressure difference value of each branch pipe. When the difference value exceeds the preset range, the central controller immediately sends a correction command to the miniature electromagnetic pressure regulating valve 32 of the corresponding branch pipe; if the pressure difference continues to exceed the standard, the pressure difference warning device is activated and issues a warning signal to remind the operator to pay attention to the operating status of the mechanism.

[0034] The central controller's real-time data processing capabilities enable rapid identification and correction of dynamic pressure deviations, maintaining a stable global pressure balance and preventing the impact of localized pressure imbalances on silicon wafers. The differential pressure warning system allows for timely detection of operational anomalies, effectively preventing damage to batches of silicon wafers and significantly enhancing production stability.

[0035] See Figures 1-2 The multi-position rapid adsorption mechanism for improving silicon wafer yield also includes a suction cup position adjustment mechanism 4; the suction cup position adjustment mechanism 4 is used to adjust the position between each suction cup 1 to adapt to the adsorption of silicon wafers of different sizes.

[0036] It should be noted that when processing silicon wafers of different sizes, the distance between each suction cup 1 is adjusted by the suction cup position adjustment mechanism 4. During the adjustment process, the suction cup position adjustment mechanism 4 drives the suction cup 1 to a preset position adapted to the current silicon wafer size, so that multiple suction cups 1 can fully cover the silicon wafer surface and form a uniform adsorption point. During this process, the connecting tube 21 moves synchronously with the suction cup 1, and the branch tube dynamic pressure adjustment mechanism 3 and the differential pressure real-time monitoring and feedback mechanism synchronously adapt to the new branch length and layout, ensuring that the pressure balance of each branch remains stable after adjustment.

[0037] The suction cup position adjustment mechanism 4 allows the mechanism to flexibly adapt to the processing needs of silicon wafers of different sizes without replacing the entire adsorption assembly, significantly improving equipment utilization. After adjustment, the distribution of each suction cup 1 always matches the size of the silicon wafer, ensuring uniform coverage of adsorption points and a reasonable distribution of adsorption force on the silicon wafer. Processing accuracy and yield are not affected by size switching.

[0038] See Figures 1-2 and Figures 6-9 The suction cup position adjustment mechanism 4 includes a mounting base 41, a motor 42, a belt 44, an adjusting shaft 45, a pair of pulleys 43, a guide shaft 47, multiple slides 48, and a slider 49. A fixed base 22 is fixed to the mounting base 41. The motor 42 is mounted on the mounting base 41. Both pulleys 43 are rotatably connected to the mounting base 41 around their axes, and the output shaft of the motor 42 is coaxially connected to one of the pulleys 43. The belt 44 is tensioned on the pair of pulleys 43. The adjusting shaft 45 is rotatably connected to the mounting base 41 around its axis, and one end of the adjusting shaft 45 is connected to one of the pulleys 43. Coaxial connection; a pair of guide shafts 47 are fixed to the mounting base 41 with their length direction parallel to the axis of the adjusting shaft 45, and a slide block 48 is slidably connected to the guide shafts 47 along the axis of the adjusting shaft 45. Multiple slide grooves 46 are provided on the adjusting shaft 45, and a slider 49 is fixed to the slide block 48, and the slide block 48 is slidably connected to the slide grooves 46 through the slider 49; multiple suction cups 1 are respectively fixed to multiple corresponding slide blocks 48; when the adjusting shaft 45 rotates, the suction cups 1 on the multiple slide blocks 48 are driven to move closer or further away from each other by the guidance of the guide shafts 47 and the cooperation of the slide grooves 46 and the slider 49.

[0039] It should be noted that when the suction cup position adjustment mechanism 4 is working, the motor 42 mounted on the mounting base 41 starts, and its output shaft drives a pulley 43 coaxially connected to it to rotate. This, in turn, drives another pulley 43 to rotate synchronously via a belt 44. This causes the adjustment shaft 45, coaxially connected to the pulley 43, to rotate accordingly. The groove 46 on the adjustment shaft 45 engages with the slider 49 on the slide block 48. Guided by the guide shaft 47, the slide block 48 slides along the length of the guide shaft 47. The suction cup 1, fixed to the slide block 48, moves closer to or further away from the slide block 48, eventually stopping at a preset position that matches the silicon wafer size and locking. Through the coordinated operation of the motor 42, pulley 43, belt 44, and adjustment shaft 45, the position of the suction cup 1 is precisely and mechanically adjusted. This results in high adjustment efficiency and high spacing control accuracy, significantly improving the positioning accuracy of the suction cup 1.

[0040] See Figures 6-7 The connecting pipe 21 is connected to the slide 48 via the mounting bracket 31; a corrugated hose 410 is provided between the connecting pipe 21 and the multi-channel diversion interface 23; when the suction cup position adjustment mechanism 4 drives multiple suction cups 1 to move, the corrugated hose 410 maintains the connection between the suction cup 1 and the vacuum pump.

[0041] It should be noted that the connecting pipe 21 is fixedly connected to the slide 48 via the mounting bracket 31, allowing the connecting pipe 21 to move synchronously with the slide 48. The corrugated hose 410 between the connecting pipe 21 and the multi-channel diversion interface 23 has good extensibility. When the slide 48 moves the suction cup 1 and the connecting pipe 21, the corrugated hose 410 adapts to the change in branch length through expansion and contraction, always maintaining the air passage's sealed connection and ensuring that negative pressure can be continuously and stably transmitted to the suction cup 1. It can be understood that the corrugated hose 410 can be replaced by a spring air tube, which, without interfering with the movement of the suction cup 1, maintains the stability of airflow through the smooth channel on the inner wall of the spring air tube. The spring air tube is existing technology and is not shown in the figure, so it will not be described in detail.

[0042] The flexible connection design of the corrugated hose 410 effectively avoids the pulling damage to the connecting pipe 21 caused by the movement of the suction cup 1, ensuring the sealing and continuity of the air circuit and maintaining a stable negative pressure value without leakage. When the branch length changes, the expansion and contraction of the corrugated hose 410 can quickly adapt without additional adjustments to the air circuit connection, making the adjustment process convenient and efficient.

[0043] See Figures 6-7 A return spring is fitted on the corrugated section of the corrugated hose 410 so that the corrugated hose 410 remains taut along its length during the extension and contraction process.

[0044] It should be noted that the return spring fitted on the corrugated section of the corrugated hose 410 is always in a state of elastic tension. When the suction cup 1 moves and causes the corrugated hose 410 to extend or retract, the return spring, through its own elastic force, limits the excessive bending and twisting of the corrugated hose 410, ensuring that the corrugated hose 410 always maintains a smooth shape along its length, allowing airflow to flow unimpeded within the hose without generating additional air resistance.

[0045] The return spring ensures that the corrugated hose 410 maintains a smooth shape during extension and retraction, avoiding additional air resistance caused by bending or twisting, keeping the airflow efficiency stable, and ensuring that the smoothness of negative pressure transmission is not affected.

[0046] Example 2: The technical solution of this example differs from that of Example 1 in that: (See below) Figures 1-10 A multi-position rapid adsorption operation method for improving silicon wafer yield, employing the aforementioned multi-position rapid adsorption mechanism for improving silicon wafer yield; specifically including the following steps: Step 1: Branch air resistance pre-compensation adjustment: Based on the actual length differences of each branch, pre-adjust the air pressure in each branch. For branches with longer lengths, increase the branch flow orifice diameter to reduce throttling resistance and compensate for the increase in air resistance caused by the length. For branches with shorter lengths, decrease the branch flow orifice diameter to slightly increase air resistance and avoid excessive airflow inertia, so as to achieve uniform basic air resistance. Step 2, Airflow Buffering and Diversion: After dynamic pressure regulation in the branch pipes, the airflow converges into the airflow buffering and diversion mechanism 2 to complete the core airflow treatment. The airflow first passes through the equal diameter and equal length channels of the multi-channel diversion interface 23 of the connecting pipe 21 and the multi-channel diversion interface 23 to achieve initial air resistance homogenization of each branch pipe and eliminate the basic influence of pipeline tolerances. Then, the airflow is divided into multiple uniform velocity fine streams by the honeycomb holes 26 of the airflow rectifier plate 25, completely eliminating eddies and turbulence and achieving secondary uniformization of flow velocity. Then, the airflow enters the airflow buffer pipe 24. Due to the increase in cavity volume, the airflow velocity drops sharply, completely eliminating the inertial impact of the rapidly pumped airflow and forming a stable laminar airflow. The stable laminar flow enters the vacuum pump through the main air path, completing the entire process of the converged airflow treatment.

[0047] Finally, it should be noted that the above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. Although the present invention has been described in detail with reference to the foregoing embodiments, those skilled in the art can still modify the technical solutions described in the foregoing embodiments or make equivalent substitutions for some of the technical features. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of the present invention should be included within the protection scope of the present invention.

Claims

1. A multi-position rapid adsorption mechanism for improving silicon wafer yield, comprising a vacuum pump and multiple suction cups (1), characterized in that: The multi-position rapid adsorption mechanism for improving silicon wafer yield also includes a gas path buffer diversion mechanism (2) and a branch pipe dynamic pressure adjustment mechanism (3); the gas path buffer diversion mechanism (2) is located between the vacuum pump and the suction cup (1); the branch pipe dynamic pressure adjustment mechanism (3) is located between the suction cup (1) and the gas path buffer diversion mechanism (2), and is used to adjust the branch pressure difference between each suction cup (1) and the gas path buffer diversion mechanism (2); the gas path buffer diversion mechanism (2) includes: Multi-channel split interface (23), connecting tube (21) connected to each suction cup (1); A gas path buffer tube (24) is fixed to a fixed base (22); one end of the gas path buffer tube (24) is connected to the connecting tube (21) on each suction cup (1) through a multi-channel diversion interface (23), and the other end of the gas path buffer tube (24) is connected to the main gas path of the vacuum pump through a flange; And an airflow rectifier plate (25) is disposed between the multi-channel diversion interface (23) and the air path buffer tube (24); the airflow rectifier plate (25) is provided with multiple honeycomb holes (26); when the airflow enters the air path buffer tube (24) from multiple channels of the multi-channel diversion interface (23), the airflow is allowed to be divided into multiple parallel airflow bundles through the honeycomb holes (26).

2. The multi-position rapid adsorption mechanism for improving silicon wafer yield according to claim 1, characterized in that: Both sides of the airflow rectifier plate (25) are coaxially provided with first sleeves (27); and both sides of the airflow rectifier plate (25) are coaxially connected to the multi-channel diversion interface (23) and the air path buffer tube (24) respectively through the first sleeves (27); a sealing gasket (28) is provided inside the first sleeve (27) to prevent airflow from leaking from the position of the first sleeve (27).

3. The multi-position rapid adsorption mechanism for improving silicon wafer yield according to claim 1, characterized in that: The inner diameter of the air buffer tube (24) is three times the inner diameter of the connecting tube (21).

4. The multi-position rapid adsorption mechanism for improving silicon wafer yield according to claim 1, characterized in that: Each connecting pipe (21) connected to the suction cup (1) is provided with a branch pipe dynamic pressure regulating mechanism (3); the branch pipe dynamic pressure regulating mechanism (3) includes a miniature electromagnetic pressure regulating valve (32) and a pressure sensor (33); the miniature electromagnetic pressure regulating valve (32) and the pressure sensor (33) are both installed on the connecting pipe (21), and the miniature electromagnetic pressure regulating valve (32) is located on the side away from the suction cup (1), and the pressure sensor (33) is located on the side close to the suction cup (1).

5. The multi-position rapid adsorption mechanism for improving silicon wafer yield according to claim 4, characterized in that: The multi-position rapid adsorption mechanism for improving silicon wafer yield also includes a differential pressure real-time monitoring and feedback mechanism; the differential pressure real-time monitoring and feedback mechanism includes a central controller and a differential pressure early warning device; the central controller and the differential pressure early warning device are both integrated in the electrical control cabinet of the differential pressure real-time monitoring and feedback mechanism; the differential pressure early warning device, the micro electromagnetic pressure regulating valve (32) and the pressure sensor (33) are all connected to the central controller via signal control.

6. The multi-position rapid adsorption mechanism for improving silicon wafer yield according to claim 1, characterized in that: The multi-position rapid adsorption mechanism for improving silicon wafer yield also includes a suction cup position adjustment mechanism (4); the suction cup position adjustment mechanism (4) is used to adjust the position between each suction cup (1) to adapt to the adsorption of silicon wafers of different sizes.

7. The multi-position rapid adsorption mechanism for improving silicon wafer yield according to claim 6, characterized in that: The suction cup position adjustment mechanism (4) includes a mounting base (41), a motor (42), a belt (44), an adjusting shaft (45), a pair of pulleys (43), a guide shaft (47), multiple slides (48), and a slider (49); the fixed base (22) is fixed to the mounting base (41); the motor (42) is mounted on the mounting base (41), and the pair of pulleys (43) are rotatably connected to the mounting base (41) around their axes, and the output shaft of the motor (42) is coaxially connected to one of the pulleys (43), and the belt (44) is tensioned on the pair of pulleys (43); the adjusting shaft (45) is rotatably connected to the mounting base (41) around its axis, and one end of the adjusting shaft (45) is connected to one of the pulleys (43). The wheels (43) are coaxially connected; a pair of guide shafts (47) are fixed to the mounting base (41) with their length direction parallel to the axis of the adjusting shaft (45); the slide (48) is slidably connected to the guide shaft (47) along the axis of the adjusting shaft (45); multiple slide grooves (46) are provided on the adjusting shaft (45); the slider (49) is fixed to the slide (48); and the slide (48) is slidably connected to the slide groove (46) through the slider (49); multiple suction cups (1) are respectively fixed to multiple corresponding slides (48); when the adjusting shaft (45) rotates, the suction cups (1) on the multiple slides (48) are driven to move closer or further away from each other by the guidance of the guide shaft (47) and the cooperation of the slide groove (46) and the slider (49).

8. The multi-position rapid adsorption mechanism for improving silicon wafer yield according to claim 7, characterized in that: The connecting pipe (21) is connected to the slide (48) through the mounting bracket (31); a corrugated hose (410) is provided between the connecting pipe (21) and the multi-channel diversion interface (23); when the suction cup position adjustment mechanism (4) drives multiple suction cups (1) to move, the connection between the suction cup (1) and the vacuum pump is maintained through the corrugated hose (410).

9. The multi-position rapid adsorption mechanism for improving silicon wafer yield according to claim 8, characterized in that: A return spring is fitted on the corrugated section of the corrugated hose (410) so that the corrugated hose (410) remains taut along the length of the corrugated hose (410) during the extension and retraction process.

10. A method for rapid adsorption at multiple locations to improve silicon wafer yield, characterized in that: The multi-position rapid adsorption mechanism for improving silicon wafer yield as described in any one of claims 1-9 specifically includes the following steps: Step 1: Branch air resistance pre-compensation adjustment: Based on the actual length differences of each branch, pre-adjust the air pressure in each branch. For branches with longer lengths, increase the branch flow orifice diameter to reduce throttling resistance and compensate for the increase in air resistance caused by the length. For branches with shorter lengths, decrease the branch flow orifice diameter to slightly increase air resistance and avoid excessive airflow inertia, so as to achieve uniform basic air resistance. Step 2, airflow buffering and diversion: After the airflow is dynamically regulated by the branch pipe, it enters the air path buffering and diversion mechanism (2) to complete the core airflow treatment. The airflow first passes through the equal diameter and equal length flow channels of the multi-channel diversion interface of the connecting pipe (21) and the multi-channel diversion interface (23) to realize the initial air resistance homogenization of each branch pipe airflow and eliminate the basic influence of pipeline tolerance. Then the airflow is divided into multiple uniform velocity fine streams by the honeycomb holes (26) of the airflow rectifier plate (25), completely eliminating eddies and turbulence, and realizing secondary homogenization of flow velocity. Then the airflow enters the air path buffer pipe (24). Due to the increase in cavity volume, the airflow velocity drops sharply, completely eliminating the inertial impact of the rapidly pumped airflow and forming a stable laminar airflow. The stable laminar flow enters the vacuum pump through the main air path to complete the full process treatment of the merged airflow.

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