Integrated capacitively coupled plasma and remote inductively coupled plasma

Abstract

A plasma processing apparatus integrates an inductively coupled plasma (ICP) chamber and a capacitively coupled plasma (CCP) chamber. The ICP chamber and the CCP chamber are in fluid communication with each other through a showerhead located between the ICP chamber and the CCP chamber. The substrate is supported on a susceptor in the CCP chamber. The ICP chamber generates a remote plasma in the ICP chamber, while the CCP chamber generates a direct plasma in an environment adjacent the substrate. In some embodiments, a remote plasma generated by the ICP chamber may assist in depositing a first layer on a substrate, while a direct plasma generated by the CCP chamber may assist in etching or processing the first layer, or depositing a second layer on a substrate, without having to transfer the substrate between modules or between stations.

Description

[0001] By incorporating via reference The PCT application form is filed together with this specification as part of this application. Each application listed in the concurrently filed PCT application form that claims a benefit or priority under this application is incorporated herein by reference in its entirety for all purposes. Technical Field

[0002] This disclosure relates to plasma handling apparatus and tools used in semiconductor manufacturing operations. Background Technology

[0003] Plasma has long been used for substrate processing. Plasma processes are commonly used in the manufacture of semiconductor devices. Plasma is generated by supplying reactant gases to a plasma generation chamber and applying an electromagnetic field. For example, plasma can be generated using capacitively coupled plasma (CCP), inductively coupled plasma (ICP), transformer-coupled plasma (TCP), electron cyclotron accelerator, or microwave technologies. High-energy ions and / or free radicals from the plasma are transported to the substrate surface to react with the materials on the substrate surface.

[0004] The background description provided herein is for the purpose of presenting an overall picture of the art. The work of the currently designated inventors within the scope described in this background section, as well as aspects of the specification that could not be identified as prior art at the time of filing, are neither expressly nor implied as prior art to this art. Summary of the Invention

[0005] This document provides a plasma processing apparatus. The plasma processing apparatus includes: an inductively coupled plasma (ICP) generation chamber; a capacitively coupled plasma (CCP) generation chamber separate from the ICP generation chamber; a nozzle located between the CCP generation chamber and the ICP generation chamber, wherein the CCP generation chamber and the ICP generation chamber are in fluid communication with each other through the nozzle; and a base configured to support a substrate in the CCP generation chamber.

[0006] In some embodiments, the ICP generation chamber is configured to generate an inductively coupled plasma containing radicals and ions of one or more first gases, wherein the CCP generation chamber is configured to generate a capacitively coupled plasma containing radicals and ions of one or more second gases, and wherein the nozzle is configured to filter out ions from the inductively coupled plasma. In some embodiments, the capacitively coupled plasma modifies the substrate in a first step and the inductively coupled plasma modifies the substrate in a second step. In some embodiments, the inductively coupled plasma modifies the substrate in a first step and the capacitively coupled plasma modifies the substrate in a second step. In some embodiments, the base is powered by an RF generator, and the nozzle is grounded to generate the capacitively coupled plasma in the CCP generation chamber. In some embodiments, the nozzle includes: a flat base; and a downwardly projecting portion having an inner wall and an outer wall and positioned along the periphery of the flat base, wherein the inner wall of the downwardly projecting portion and the flat base define an orifice of the nozzle. In some embodiments, the nozzle further includes a plurality of through-holes configured to filter out ions from the inductively coupled plasma generated in the ICP generation chamber. In some embodiments, the nozzle includes grooves configured to circulate coolant through the nozzle. In some embodiments, the CCP generation chamber is configured to generate the capacitively coupled plasma and confine it within the orifices of the nozzle. In some embodiments, the base is configured to be inclined such that the principal surface of the base is parallel to the principal surface of the flat base of the nozzle. In some embodiments, the plasma processing apparatus further includes a first RF generator coupled to the ICP generation chamber; and a second RF generator coupled to the CCP generation chamber, wherein the first RF generator is configured to deliver higher RF power and a higher frequency than the second RF generator. In some embodiments, the plasma processing apparatus further includes an RF generator; and a power divider coupled to the RF generator, wherein the power divider is configured to transmit RF power through the RF generator to the ICP generation chamber or the CCP generation chamber. In some embodiments, the plasma processing apparatus further includes: a gas injector fluidly connected to the ICP generation chamber for delivering one or more first gases to the ICP generation chamber; and one or more gas ports fluidly connected to the nozzle but not to the ICP generation chamber for delivering one or more second gases to the CCP generation chamber.In some embodiments, the plasma processing apparatus further includes a controller configured to have instructions for performing the following operations: generating an inductively coupled plasma in the ICP generation chamber to assist in the deposition of a dielectric layer on the substrate; and generating a capacitively coupled plasma in the CCP generation chamber to assist in the etching or partial etching of the dielectric layer on the substrate. In some embodiments, the controller is further configured to have instructions for performing the following operations: directing one or more precursor gases toward the substrate, wherein the inductively coupled plasma from the ICP generation chamber provides radicals of one or more first gases, wherein the one or more precursor gases react with the radicals of the one or more first gases to deposit the dielectric layer on the substrate. In some embodiments, the controller is further configured to have instructions for performing the following operations: directing one or more second gases toward the substrate, wherein the capacitively coupled plasma comprises ions of the one or more second gases to etch or partially etch the dielectric layer on the substrate. In some embodiments, the plasma processing apparatus further includes a controller configured to have instructions for performing the following operations: generating inductively coupled plasma in the ICP generation chamber to assist in the deposition of a stretched film on the substrate; and generating capacitively coupled plasma in the CCP generation chamber to assist in the deposition of a compressed film on the substrate. In some embodiments, the plasma processing apparatus further includes a controller configured to have instructions for performing the following operations: generating inductively coupled plasma in the ICP generation chamber to assist in the deposition of a film on the substrate; and generating capacitively coupled plasma in the CCP generation chamber to assist in processing the film on the substrate.

[0007] The present invention also provides a multi-station processing apparatus. This multi-station processing apparatus includes multiple processing stations, each processing station comprising: an inductively coupled plasma (ICP) generation chamber; a capacitively coupled plasma (CCP) generation chamber separate from the ICP generation chamber; a nozzle located between the CCP generation chamber and the ICP generation chamber, wherein the CCP generation chamber and the ICP generation chamber are in fluid communication with each other through the nozzle; and a base configured to support a substrate in the CCP generation chamber.

[0008] In some embodiments, the ICP generation chamber is configured to generate an inductively coupled plasma containing radicals and ions of one or more first gases, and the CCP generation chamber is configured to generate a capacitively coupled plasma containing radicals and ions of one or more second gases, wherein the nozzle is configured to filter out ions from the inductively coupled plasma. In some embodiments, the multi-station processing apparatus further includes a controller configured to have instructions for performing the following operations: generating an inductively coupled plasma in the ICP generation chamber for depositing a first layer on the substrate; and generating a capacitively coupled plasma in the CCP generation chamber for etching or processing the first layer, or depositing a second layer on the first layer of the substrate.

[0009] The present invention also provides a method for processing a substrate, the method comprising: generating an inductively coupled plasma in a remote plasma chamber to assist in depositing a first layer on the substrate in a processing chamber; and generating a capacitively coupled plasma in the processing chamber to assist in etching or processing the first layer, or depositing a second layer on the substrate.

[0010] In some embodiments, the remote plasma chamber and the processing chamber are in fluid communication with each other via a nozzle located between the remote plasma chamber and the processing chamber. In some embodiments, the method further comprises: allowing a precursor gas to flow into the processing chamber, wherein the precursor gas system reacts with free radicals of the inductively coupled plasma to deposit the first layer on the substrate. Attached Figure Description

[0011] Figure 1 A schematic diagram of an exemplary capacitively coupled plasma device for generating plasma between a nozzle and a base in a processing chamber is shown.

[0012] Figure 2 A schematic diagram of an exemplary inductively coupled plasma device for generating plasma in a remote plasma source, which is fluidly coupled to a processing chamber via a nozzle, is shown.

[0013] Figure 3 A detailed schematic diagram of a plasma device according to some embodiments is shown, which integrates an inductively coupled plasma chamber for generating remote plasma and a capacitively coupled plasma chamber for generating direct plasma.

[0014] Figure 4A simplified schematic diagram of a plasma device according to some embodiments is shown, which integrates an inductively coupled plasma chamber for generating remote plasma and a capacitively coupled plasma chamber for generating direct plasma.

[0015] Figure 5A Showing Figure 4 A simplified schematic diagram of a plasma device, which, according to some implementations, uses an inductively coupled plasma chamber to generate remote plasma during substrate processing.

[0016] Figure 5B Showing Figure 4 A simplified schematic diagram of a plasma device, which, according to some implementations, uses a capacitively coupled plasma chamber to generate direct plasma during substrate processing.

[0017] Figure 6 This diagram shows a nozzle associated with a base used in a plasma device, which, according to some implementations, integrates an inductively coupled plasma chamber for generating remote plasma and a capacitively coupled plasma chamber for generating direct plasma.

[0018] Figure 7 A flowchart of an exemplary method for treating a substrate using inductively coupled plasma and capacitively coupled plasma according to some embodiments is shown.

[0019] Figure 8 A schematic diagram of an exemplary processing tool comprising multiple stations is shown, wherein, according to some implementations, one or more stations are each configured to generate inductively coupled plasma and capacitively coupled plasma. Detailed Implementation

[0020] The embodiments disclosed below describe the processing of material on a substrate (e.g., a wafer, substrate, or other workpiece). Workpieces can have various shapes, sizes, and materials. In this application, the terms “semiconductor wafer,” “wafer,” “substrate,” “wafer substrate,” and “partially manufactured integrated circuit” are used interchangeably. Those skilled in the art will understand that the term “partially manufactured integrated circuit” can refer to a silicon wafer during any of the many stages of integrated circuit manufacturing on a silicon wafer. Wafers or substrates used in the semiconductor equipment industry typically have diameters of 200 mm, 300 mm, or 450 mm. Unless otherwise stated, the processing details described herein (e.g., flow rate, power level, etc.) relate to processing a 300 mm diameter substrate or to a processing chamber configured for processing a 300 mm diameter substrate, and can be appropriately scaled to other substrate or processing chamber sizes as needed. Besides semiconductor wafers, other workpieces that can be used in the implementations disclosed herein include various articles of manufacture, such as printed circuit boards. This method and apparatus can be used to manufacture semiconductor devices, displays, LEDs, photovoltaic panels, etc.

[0021] introduce Capacitively coupled plasma (CCP) systems are among the most common types of plasma sources. Typically, such systems comprise a first and second electrode configured in a parallel-plate structure. At least one electrode is powered by an RF generator, typically operating at a frequency of around 13.56 MHz. During operation, a capacitor is formed between the energized and grounded electrodes. A process gas is introduced into the space between the electrodes. When an electric field is generated between the electrodes, the atoms of the process gas are ionized and release electrons. When energy is applied to the gas, a plasma of the process gas is formed, leaving behind a mixture of charged and uncharged particles. CCP systems are widely used in thin-film deposition (e.g., sputtering) and etching in the semiconductor processing industry.

[0022] Inductively coupled plasma (ICP) systems can be used in a variety of microprocessing processes, including substrate cleaning, surface conditioning, thin film deposition, etching, and cleaning. In an ICP system, a generator supplies a radio frequency (RF) signal to an induction coil. This supply signal generates a time-varying magnetic field around the induction coil, which then induces a current in the process gas via electromagnetic induction. This current provides energy to generate plasma from the process gas. Impedance matching networks can be used to facilitate power transfer from the supply signal generator to the induction coil of the ICP system, thereby promoting plasma formation while minimizing wasted reflected power and potentially reducing the risk of damage to equipment manufactured using the ICP system, as well as the risk of damage to the ICP system components themselves.

[0023] In semiconductor manufacturing processes, CCP (Chip-on-Chip) processing and ICP (Inductively Coupled Processing) processing are typically performed in different stations or modules. The hardware components used in the CCP system generally do not overlap with those used in the ICP system, preventing the CCP and ICP systems from being combined into a single station or module. Therefore, semiconductor substrates processed by the CCP system are subsequently transferred to a different module or station processed by the ICP system, and vice versa.

[0024] Figure 1 A schematic diagram of an exemplary capacitively coupled plasma apparatus for generating plasma between a nozzle and a base in a processing chamber is shown. Processing station 100 generates capacitively coupled plasma in the space between a nozzle 106 and a base 108 in processing chamber 102.

[0025] Processing station 100 is in fluid communication with reactant delivery system 101 to deliver process gas to nozzle 106. Reactant delivery system 101 includes mixing container 104 for mixing and / or regulating the process gas for delivery to nozzle 106. One or more inlet valves 120 can control the introduction of process gas into mixing container 104. Some reactants may be stored in liquid form before being vaporized at processing station 100 and subsequently delivered to processing station 100. For example, the apparatus may include vaporization point 103 for vaporizing liquid reactants to be supplied to mixing container 104. In some embodiments, vaporization point 103 may be a heated vaporizer.

[0026] Nozzle 106 dispenses process gas toward substrate 112. In some embodiments, substrate 112 is located below nozzle 106 and is shown resting on base 108. It should be understood that nozzle 106 can have any suitable shape and can have any suitable number and arrangement of ports for dispensing process gas to substrate 112. In some embodiments, base 108 can be raised or lowered to expose substrate 112 to the volume between substrate 112 and nozzle 106. It should be understood that in some embodiments, the height of base 108 can be programmatically adjusted by a suitable system controller 150. In another case, adjusting the height of base 108 can allow the plasma density to vary during plasma activation cycles in the process. At the end of a process phase, base 108 can be lowered during another substrate transfer phase to allow removal of substrate 112 from base 108. In some embodiments, the position of nozzle 106 can be adjusted relative to base 108 to change the volume between substrate 112 and nozzle 106. In some embodiments, base 108 may include a rotation axis for orienting the substrate 112. It should be understood that in some embodiments, one or more of these exemplary adjustments may be programmed to be performed by one or more suitable system controllers 150.

[0027] In some embodiments, the base 108 may be configured to be heated to an elevated temperature by a heater 110. In some embodiments, pressure control of the processing station 100 may be provided by a butterfly valve 118. The butterfly valve 118 regulates the vacuum provided by a downstream vacuum pump (not shown).

[0028] In some embodiments, nozzle 106 and base 108 are electrically connected to RF power supply 114 and matching network 116 to power the plasma in processing chamber 102. Nozzle 106 and base 108 can serve as electrodes to generate capacitively coupled plasma in processing chamber 102. In some embodiments, plasma energy can be controlled by controlling one or more of the following: processing station pressure, gas concentration, RF source power, RF source frequency, and plasma power pulse timing. For example, RF power supply 114 and matching network 116 can operate at any suitable power to form a plasma with a desired composition of free radicals and ionized matter. In some embodiments, RF power supply 114 and matching network 116 can be operated to apply plasma power to processing chamber 102 to ignite plasma generated by reactant gases in processing chamber 102. Exemplary plasma power applied by RF power supply 114 can be equal to or less than about 10,000 W, equal to or less than about 5,000 W, or between about 10 W and about 5,000 W. Similarly, RF power supply 1114 can provide RF power at any suitable frequency. In some embodiments, RF power supply 1114 can be configured to independently control the high-frequency RF power source and the low-frequency RF power source. Exemplary low-frequency RF frequencies may include, but are not limited to, frequencies between 0 kHz and 500 kHz. Exemplary high-frequency RF frequencies may include, but are not limited to, frequencies between 1.8 MHz and 2.45 GHz, or at least about 13.56 MHz, at least about 27 MHz, at least about 40 MHz, or at least about 60 MHz.

[0029] Figure 2 A schematic diagram of an exemplary inductively coupled plasma apparatus for generating plasma in a remote plasma source fluidly coupled to a processing chamber via a nozzle is shown. The processing station 200 generates inductively coupled plasma in a plasma generation chamber 202, which may be dome-shaped, wherein the plasma generation chamber 202 is fluidly coupled to the processing chamber 204 via a gas distributor 206, which may also be referred to as a nozzle.

[0030] Substrate 212 is supported on a substrate support or base 214. Base 214 is movable within processing chamber 204 to position substrate 212 within processing chamber 204. Base 214 typically includes a chuck (sometimes called a clamp) to hold the substrate during processing. The chuck can be an electrostatic chuck, a mechanical chuck, or a variety of other types of chuck suitable for use in this industry. In some embodiments, base 214 may also be equipped with one or more heaters to regulate the temperature of substrate 212.

[0031] Processing station 200 includes a plasma generation chamber 202 separate from processing chamber 204. Plasma generation chamber 202 may also be referred to as a remote plasma source. Plasma generation chamber 202 may be a hemispherical dome formed of ceramic material. Induction coil 218 is wound around the outside of the dome of plasma generation chamber 202. For example, induction coil 218 may be formed of copper or another highly conductive material. Power through induction coil 218 may be provided by generator 232. Generator 232 may generate an RF alternating current (AC) supply signal to be provided to induction coil 218, wherein the signal may have a frequency between about 300 kHz and about 60 MHz, or at least about 1 MHz or at least about 13 MHz. Generator 232 may supply RF power in the range between about 100 W and about 10000 W, or in the range between about 1000 W and about 8000 W.

[0032] During operation, one or more process gases are introduced into the plasma generation chamber 202 via one or more inlets 216. These process gases can then be converted into plasma by the ICP system of the processing station 200. In various applications, the process gases may or may not be premixed. In some embodiments, the process gases may be introduced via a gas supply inlet containing orifices. Some orifices may be used to orient one or more process gases along the injection axis of the chamber wall of the plasma generation chamber 202.

[0033] When generator 232 provides an RF supply signal to induction coil 218, energy is generated in plasma generation chamber 202 to form and sustain plasma 224 within plasma generation chamber 202 via inductively coupled plasma generation. Plasma 224 comprises a mixture of at least ions and neutral substances (e.g., free radicals). Ions and free radicals of one or more process gases can be continuously generated in plasma generation chamber 202. The free radical material of plasma 224 can flow from plasma generation chamber 202 to process chamber 204 via gas distributor 206.

[0034] Gas distributor 206 may include or function as an ion filter. In some cases, gas distributor 206 may also include or function as a photon filter. Filtering ions and / or photons can reduce substrate damage, undesirable molecular re-excitation, and / or selective breakdown or decomposition or precursors within processing chamber 204. Gas distributor 206 may include a plurality of orifices to diffuse gas flow into processing chamber 204. These orifices may be arranged as an array of regularly spaced channels or through-holes extending through the plate separating plasma generation chamber 202 and processing chamber 204.

[0035] In some embodiments, excited-state radical material exiting gas distributor 206 may flow into the interior of processing chamber 204. In some cases, the excited-state radical material may be converted into a relaxed or ground-state radical material within processing chamber 204. In some embodiments, precursor gas or other reactant gas may flow into processing chamber 204 through a gas outlet (not shown). The gas outlet may be located downstream of the outlet of gas distributor 206. In this way, the precursor gas or other reactant gas will not interact with the radical material from plasma generation chamber 202 until it enters processing chamber 204. The radical material, which may be in a relaxed or ground-state state, reacts with the precursor gas or other reactant gas in the environment adjacent to substrate 212 within processing chamber 204. This reaction may result in the CVD formation of a thin film (e.g., a dielectric material) on substrate 212.

[0036] The process gas can be removed from the process chamber 204 via fluid coupling to the outlet 248 of a pump (not shown). Therefore, excess precursor gas, reactant gas, free radicals, dilution gas, displacement gas, purge gas, and other gases can be removed from the process chamber 204.

[0037] In some embodiments, system controller 250 is operatively connected to processing station 200. System controller 250 may include processor system 252 (e.g., microprocessor) configured to execute instructions stored in data system 254 (e.g., memory). In some embodiments, system controller 250 may be connected to generator 232 to control plasma parameters and / or conditions. In some embodiments, system controller 250 may be connected to base 214 to control base height and temperature. In some embodiments, system controller 250 may control other processing conditions, such as RF power setting, frequency setting, duty cycle, pulse time, pressure within processing chamber 204, pressure within plasma generation chamber 202, gas flow rate, and temperature of base 214.

[0038] Integrated ICP and CCP systems This disclosure integrates an ICP chamber and a CCP chamber into a single plasma device or station for substrate processing. The ICP chamber is separate from the CCP chamber and is in fluid communication with the CCP chamber via a nozzle. The remote plasma generated in the ICP chamber is used to deposit a first layer on the substrate or otherwise process the substrate. The direct plasma generated in the CCP chamber is used to etch or process the first layer of the substrate, to deposit a second layer on the first layer of the substrate, or to otherwise process the substrate.

[0039] Using remote plasma (e.g., ICP-based plasma), the substrate can be exposed to fewer ions and higher-energy materials. Using direct plasma (e.g., CCP-based plasma), the substrate can be exposed to more ions and higher-energy materials. The integration of the ICP and CCP chambers allows for the execution of two different types of plasma-based processes without transfer to different modules or stations. This increases throughput, reduces queuing time, provides greater flexibility for plasma-based substrate handling, and prevents exposure to environmental conditions that could damage or contaminate the substrate during transfer.

[0040] Figure 3 A detailed schematic diagram of a plasma device according to some embodiments is shown, which integrates an inductively coupled plasma chamber for generating remote plasma and a capacitively coupled plasma chamber for generating direct plasma.

[0041] The plasma apparatus 300 includes a remote plasma generation chamber 302 and a processing chamber 303. A nozzle 304 separates the remote plasma generation chamber 302 from the processing chamber 303. The nozzle 304 is arranged between the remote plasma generation chamber 302 and the processing chamber 303. In some cases, the remote plasma generation chamber 302 may also be referred to as a plasma source, a remote plasma source, an ICP system, or an ICP chamber. In some embodiments, the processing chamber 303 may also be referred to as a substrate processing chamber, a reaction chamber, or a CCP system or a CCP chamber.

[0042] The nozzle 304 may include a base 305 and a cylindrical portion 307 extending vertically downward from the base 305. The cylindrical portion 307 has an outer wall 309-1 and an inner wall 309-2. The inner wall 309-2 of the cylindrical portion 307 defines an orifice 306 of the nozzle 304. The diameter of the orifice 306 is equal to the diameter of the inner wall 309-2 of the cylindrical portion 307 of the nozzle 304.

[0043] The treatment chamber 303 has a side wall 308 and a bottom wall 310. The side wall 308 is attached to the bottom of the cylindrical portion 307 of the nozzle 304. The side wall 308 is perpendicular to the base 305 and extends vertically downward from the bottom of the outer wall 309-1 of the cylindrical portion 307. The bottom wall 310 of the treatment chamber 303 is parallel to the base 305 of the nozzle 304 and perpendicular to the side wall 308 of the treatment chamber 303.

[0044] The base 312 is disposed within the processing chamber 303 and located below the nozzle 304. During processing, a substrate 314 is disposed on the top surface 316 of the base 312. The top surface 316 of the base 312 may be flat and parallel to the base 305 of the nozzle 304. The inner diameter of the cylindrical portion 307 of the nozzle 304 is larger than the outer diameter of the top surface 316 of the base 312. Similarly, the inner diameter of the cylindrical portion 307 of the nozzle 304 is larger than the outer diameter of the substrate 314.

[0045] An actuator 320 driven by a motor 322 can vertically move the base 312 up and down relative to the nozzle 304. Thus, the substrate 314 and the top surface 316 of the base 312 can move within the orifice 306 of the nozzle 304. The remote plasma generation chamber 302 and the nozzle 304 can be fixed relative to the base 312. The gap between the bottom of the base 305 of the nozzle 304 and the top surface 316 of the base 312 can be adjusted by vertically moving the base 312 within the cylindrical portion 307 of the nozzle 304. For example, the gap can be between about 0.01 inches and about 5 inches, between about 0.02 inches and about 3 inches, or between about 0.05 inches and about 2 inches, such as about 1 inch or about 2 inches. In some embodiments, the base 312 may be configured to be tilted. The top surface 316 of the base 312 may be tilted relative to a reference frame, which may be a horizontal plane. The base 312 may be configured to be tilted such that the main surface of the base 312 (i.e., the top surface 316) is parallel to the main surface of the base 305 of the nozzle 304 (i.e., the bottom surface 364). In some embodiments, the base 312 may also be configured to rotate. The substrate 314 held on the base 312 may be moved, tilted, and / or rotated in a vertical direction during processing.

[0046] The remote plasma generation chamber 302 can be dome-shaped as shown or any other suitable shape. The bottom end of the remote plasma generation chamber 302 is open and attached to the top end of a first cylindrical member 324. The first cylindrical member 324 has a first flange 326 extending radially outward from approximately its center. Therefore, the first cylindrical member 324 has the shape of the letter "T," with the letter "T" rotated approximately 90 degrees to the left. A second cylindrical member 328 surrounds the first cylindrical member 324. The second cylindrical member 328 has a second flange 329 extending radially inward from its bottom end. Therefore, the second cylindrical member 328 has the shape of the letter "L," with the letter "L" flipped horizontally. The first flange 326 of the first cylindrical member 324 overhangs the second flange 329 of the second cylindrical member 328. The bottom ends of the first and second cylindrical components 324 and 328 are attached to the top of the base 305 of the nozzle 304 near the periphery of the base 305 of the nozzle 304.

[0047] The remote plasma generation chamber 302 utilizes ICP to generate remote plasma (i.e., plasma outside the processing chamber 303). The remote plasma generation chamber 302 receives one or more first gases from the gas distribution system 330 via a gas injector 332 disposed at the top of the remote plasma generation chamber 302. However, it should be understood that one or more first gases may be introduced into the remote plasma generation chamber 302 in other ways. A coil 334 is disposed around the remote plasma generation chamber 302. In some embodiments, a first end of the coil 334 is grounded and a second end of the coil 334 is connected to the RF generation system 336.

[0048] RF generation system 336 generates RF power and outputs it to coil 334. As an example, RF generation system 336 may include RF generator 338 that generates RF power. RF power is transmitted to coil 334 by matching network 340. The RF power supplied to coil 334 ignites gas injected into remote plasma generation chamber 302 by gas injector 332 and generates inductively coupled plasma 342. Since remote plasma generation chamber 302 generates inductively coupled plasma 342 remotely from processing chamber 303 (i.e., outside processing chamber 303), inductively coupled plasma 342 is also referred to as remote plasma.

[0049] The base 305 of the nozzle 304 includes a first set of holes 360. The first set of holes 360 may also be referred to as free radical holes or through holes. The first set of holes 360 extends from the top surface 362 of the base 305 of the nozzle 304 to the bottom surface 364 of the base 305 of the nozzle 304. In other words, the first set of holes 360 extends through the entire thickness of the nozzle 304.

[0050] Additionally, the base 305 of the nozzle 304 may include an inflation section 366 that is separate from and not in fluid communication with the first set of orifices 360. The inflation section 366 may receive one or more precursor gases from the gas delivery system 370. The base 305 of the nozzle 304 also includes a second set of orifices 372. The second set of orifices 372 may also be referred to as precursor orifices or ports. The second set of orifices 372 extends from the inflation section 366 to the bottom surface 364 of the base 305 of the nozzle 304. The first set of orifices 360 is not in fluid communication with either the inflation section 366 or the second set of orifices 372. In some embodiments, the diameter and length of the first set of orifices 360 are greater than those of the second set of orifices 372. For example, the diameter of each of the first set of orifices 360 is at least twice that of each of the second set of orifices 372. The inflation section 366 refers to a volume, space, or cavity defined in the base 305, which is in fluid communication with the second set of holes 372 but not with the first set of holes 360.

[0051] The base 305 of the nozzle 304 may also include a plurality of recesses 368. The recesses 368 may form cooling channels for coolant flow. The fluid delivery system 380 supplies coolant to the recesses 368 through an inlet in the base 305 of the nozzle 304. In some embodiments, the coolant may be water. In some embodiments, the coolant may be a fluorinated heat transfer fluid, such as Galden®. By circulating the coolant through the nozzle 304, the nozzle 304 can be cooled to maintain a consistent and uniform temperature during substrate processing. Therefore, the temperature on the bottom surface 364 of the base 305 of the nozzle 304 is spatially and temporally uniform during substrate processing.

[0052] One or more temperature sensors (not shown) may be disposed in the base 305 of the nozzle 304. The one or more temperature sensors may be connected to a temperature controller 382. The temperature controller 382 may control the supply of coolant from the fluid delivery system 380 to the recess 368 to control the temperature of the nozzle 304.

[0053] Although not shown, base 312 may include one or more heaters, a cooling system that receives coolant from fluid delivery system 380, and / or one or more temperature sensors. Temperature controller 382 may be connected to one or more temperature sensors in base 312. Temperature controller 382 may control the power supplied to one or more heaters. Optionally or additionally, temperature controller 382 may control the supply of coolant from fluid delivery system 380 to the cooling system in base 312 to control the temperature of base 312.

[0054] Valve 386 and pump 388 can control the pressure in processing chamber 303 and discharge reactants from processing chamber 303. System controller 390 can control the components of the plasma device 300 described above.

[0055] Nozzle 304 filters ions from inductively coupled plasma 342 and allows free radicals from inductively coupled plasma 342 to enter processing chamber 303 through a first set of orifices 360. The total cross-sectional area of ​​the first set of orifices 360 can be optimized to filter ions from inductively coupled plasma 342, to allow only free radicals from inductively coupled plasma 342 to enter processing chamber 303 through nozzle 304, and to limit the back diffusion of precursor gas through nozzle 304 into remote plasma generation chamber 302. As described below, the total cross-sectional area of ​​the first set of orifices 360 can also be optimized to limit parasitic plasma formed in the nozzle by capacitively coupled plasma in processing chamber 303.

[0056] In some embodiments, inductively coupled plasma 342 can be used for etching, processing, or cleaning operations associated with the processing substrate 314. In some embodiments, inductively coupled plasma 342 can be used for deposition operations associated with the processing substrate 314. For example, the radicals of inductively coupled plasma 342 can react with a precursor gas in the gap between the nozzle 304 and the base 312, where a thin film can be deposited on the substrate 314 by a deposition process such as ALD or CVD. The open area of ​​the nozzle 304 provided by the first set of orifices 360 for allowing radicals to pass through, the density and pattern of the first set of orifices 360 (radix orifices) and the second set of orifices 372 (precursor orifices), and the structural and functional characteristics of the columnar portion 307 of the nozzle 304 can all provide near-zero radial and azimuth inhomogeneities in the film deposited using the nozzle 304.

[0057] Processing chamber 303 uses a CCP to generate in-situ plasma (i.e., plasma inside processing chamber 303). Processing chamber 303 receives one or more second gases from gas delivery system 370 via a second set of orifices 372 or from gas distribution system 330 via a first set of orifices 360. However, it should be understood that one or more second gases may be introduced into processing chamber 303 in other ways. RF power may be supplied to nozzle 304 or base 312. In some embodiments, RF power is supplied to base 312 to act as an energized electrode, while nozzle 304 is grounded to act as a grounded electrode. Base 312 may be connected to RF generation system 346.

[0058] RF generation system 346 generates RF power and outputs it to base 312. As an example, RF generation system 346 may include RF generator 348 that generates RF power. The RF power is transmitted to base 312 by matching network 350. Under sufficient power or when the electric field strength between base 312 and nozzle 304 is sufficient, one or more second gases supplied to processing chamber 303 are ionized and form capacitively coupled plasma 344. When RF power is coupled to nozzle 304, capacitively coupled plasma 344 is ignited and maintained in the gap between base 312 and nozzle 304 in processing chamber 303. Since capacitively coupled plasma 344 is generated inside processing chamber 303, capacitively coupled plasma 344 is also referred to as in-situ or direct plasma.

[0059] In some embodiments, capacitively coupled plasma 344 can be used for deposition operations associated with processing substrate 314. In some embodiments, capacitively coupled plasma 344 can be used for etching, processing, or cleaning operations associated with processing substrate 314. For example, ions from capacitively coupled plasma 344 can be generated in an environment adjacent to substrate 314, and substrate 314 can be exposed to the ions from capacitively coupled plasma 344 such that one or more material layers of substrate 314 are etched. In some cases, ions from capacitively coupled plasma 344 can be directionally applied to non-conformal etched portions of one or more material layers. The gap between nozzle 304 and base 312, and the gap between the cylindrical portion 307 of nozzle 304 and the edge of base 312, can be optimized to provide microvolumes in processing chamber 303 such that capacitively coupled plasma 344 does not form in areas outside the space between nozzle 304 and base 312. In other words, capacitively coupled plasma 344 can be formed, maintained, and confined within orifice 306 of nozzle 304.

[0060] Figure 4 A simplified schematic diagram of a plasma device according to some embodiments is shown, which integrates an inductively coupled plasma chamber for generating remote plasma and a capacitively coupled plasma chamber for generating direct plasma.

[0061] The plasma device 400 includes an ICP generation chamber 402 and a CCP generation chamber 403. The CCP generation chamber 403 is separated from the ICP generation chamber 402. The plasma device 400 also includes a nozzle 404 between the ICP generation chamber 402 and the CCP generation chamber 403, wherein the nozzle 404 separates the ICP generation chamber 402 from the CCP generation chamber 403. The CCP generation chamber 403 and the ICP generation chamber 402 are in fluid communication with each other through the nozzle 404. The plasma device 400 further includes a base 412 in the CCP generation chamber 403, wherein the base 412 is configured to support a substrate 414 in the CCP generation chamber 403. A controller 490 can control the various components of the plasma device 400.

[0062] The nozzle 404 includes a flat base 405 and a downwardly extending projection 407 extending vertically downward from the flat base 405. The downwardly extending projection 407 is arranged along the periphery of the flat base 405 of the nozzle 404. The downwardly extending projection 407 has an inner wall and an outer wall, wherein the inner wall of the downwardly extending projection 407 defines an orifice 406 of the nozzle 404.

[0063] Nozzle 404 includes a plurality of through-holes 460. Gas flows from ICP generation chamber 402 to CCP generation chamber 403 through the through-holes 460 of nozzle 404. The through-holes 460 may be arranged as a regularly spaced channel or an array of through-holes extending through the thickness of the flat base 405 of nozzle 404. Plasma-activating material containing free radicals can exit from ICP generation chamber 402 to CCP generation chamber 403 through the through-holes 460 of nozzle 404. In some implementations, the plurality of through-holes 460 may be configured to filter out ions.

[0064] Nozzle 404 also includes multiple gas ports 472. Airflow flows from the inflation section of nozzle 404 through the gas ports 472 to CCP generation chamber 403. The inflation section refers to a volume, space, or cavity located in the flat base 405 of nozzle 404, which is in fluid communication with the CCP generation chamber but not with the ICP generation chamber. More specifically, the inflation section is in fluid communication with the gas ports 472 but not with the through-hole 460. Gas flowing in the through-hole 460 of nozzle 404 is prevented from mixing with gas flowing through the gas ports 472 until reaching the CCP generation chamber 403. Thus, the gas in the through-hole 460 and the gas in the gas ports 472 are provided through different outlets / channels to avoid mixing in nozzle 404.

[0065] The nozzle 404 can be cooled or otherwise maintained at a uniform temperature. In some embodiments, the flat base 405 of the nozzle 404 may include multiple grooves or channels through which coolant flows. In other words, the nozzle 404 may include grooves configured to circulate coolant through the nozzle 404. The coolant may be water or a fluorinated heat transfer fluid such as Galden®. The coolant can be used to control the temperature of the nozzle 404.

[0066] A base 412 is disposed below the nozzle 404 in the CCP generation chamber 403. The base 412 may include a chuck, forks, and / or lifting pins to secure the substrate 414 during and between processes. In some embodiments, the base 412 is an electrostatic chuck. The base 412 may include one or more electrodes for providing electrostatic clamping force, configured to hold the substrate 414. Heating elements and / or a cooling system may be coupled to the base 412 to control the temperature of the substrate 414.

[0067] The base 412 can be configured to move vertically to adjust the gap distance between the nozzle 404 and the base 412 via a base lifting assembly. In this way, the substrate 414 can move together with the orifice 406 of the nozzle 404. In some embodiments, the base 412 is configured to tilt relative to a horizontal plane via a tilt adjustment system. During processing of the substrate 414, the main surface of the base 412 can be parallel to the main surface of the nozzle 404.

[0068] ICP generation chamber 402 is configured to generate inductively coupled plasma 442. ICP generation chamber 402 may be dome-shaped or other suitable shape as shown. Gas injector 432 may be located on top of ICP generation chamber 402 to supply process gas to ICP generation chamber 402. Coil 434 may surround ICP generation chamber 402. Coil 434 may be connected to RF generator 436. One or more first gases are supplied to ICP generation chamber 402. One or more first gases may be supplied to the top of ICP generation chamber 402 via gas injector 432.

[0069] In some embodiments, one or more first gases may comprise oxygen-containing reactants, nitrogen-containing reactants, hydrogen-containing reactants, carbon-containing reactants, or combinations thereof. Exemplary reactants include, but are not limited to, oxygen (O2), ozone (O3), carbon dioxide (CO2), carbon monoxide (CO), nitrous oxide (N2O), water (H2O), methanol (CH3OH), hydrazine (N2H4), nitrogen (N2), ammonia (NH3), silane (SiH4), hydrogen (H2), etc. In some embodiments, one or more first gases may additionally comprise diluent gases, carrier gases, or inert gas substances. Non-limiting examples of inert gas substances may include helium (He), neon (Ne), argon (Ar), krypton (Kr), and xenon (Xe).

[0070] RF generator 436 generates RF power and outputs it to coil 434. In some embodiments, the frequency generated by RF generator 436 is between about 2 MHz and about 60 MHz, for example, 60 MHz, or between about 10 MHz and about 30 MHz, for example, about 13 MHz or 27 MHz. However, in some embodiments, the frequency generated by RF generator 436 can be several hundred kHz, for example, between about 100 kHz and about 800 kHz, for example, about 400 kHz. In some embodiments, the power supplied to RF generator 436 is between about 10 W and about 20,000 W, between about 100 W and about 10,000 W, or between about 500 W and about 8,000 W, for example, about 6,500 W. The RF power supplied by RF generator 436 to coil 434 can ignite one or more first gases to form inductively coupled plasma 442. Controller 490 can control the delivery of RF power to RF generator 436 for generating inductively coupled plasma 442.

[0071] The inductively coupled plasma 442 may contain ions and radicals of one or more first gases. The nozzle 404 may be configured to filter out ions to limit ion bombardment damage to the substrate 414. Therefore, radicals of one or more first gases may pass through the vias of the nozzle 404 and be delivered to the CCP generation chamber 403. During processing of the substrate 414, the substrate 414 may be exposed to radicals of one or more first gases from the inductively coupled plasma 442.

[0072] The CCP generation chamber 403 is configured to generate capacitively coupled plasma 444. The nozzle 404 and base 412 can act as electrodes to generate capacitively coupled plasma 444 in the space between the nozzle 404 and base 412. The CCP generation chamber 403 can be configured to generate capacitively coupled plasma 444 and confine it within the orifice 406 of the nozzle 404. In some cases, capacitively coupled plasma 444 is generated by powering the nozzle 404 and grounding the base 412. (The last two sentences are repetitive and can be omitted.) Figure 4 As shown, the RF generator 438 can be electrically connected to the base 412 to power the base 412 while grounding the nozzle 404. This illustrates that the base 412 is powered by the RF generator 438 and the nozzle 404 is grounded to generate capacitively coupled plasma 444 in the CCP generation chamber 403.

[0073] One or more second gases can be supplied to the CCP generation chamber 403. In some embodiments, one or more second gases can be supplied via a nozzle 404 located above the base 412. However, it should be understood that one or more second gases can be supplied to the CCP generation chamber 403 via other suitable means. In some embodiments, one or more second gases can be supplied to the CCP generation chamber 403 via a gas port 472. The gas port 472 is in fluid communication with the nozzle 404 but not with the ICP generation chamber 402. When one or more second gases are supplied to the CCP generation chamber 403 via the gas port 472, one or more second gases can be supplied to the inflation section of the nozzle 404. In some embodiments, one or more second gases are supplied to the CCP generation chamber 403 via a through-hole 460. In this case, one or more second gases can be supplied to the ICP generation chamber 402 and delivered through the nozzle 404.

[0074] In some embodiments, one or more second gases may comprise fluorine-containing reactants or other halogen-containing reactants, nitrogen-containing reactants, oxygen-containing reactants, hydrogen-containing reactants, sulfur-containing reactants, carbon-containing reactants (e.g., hydrocarbons), silicon-containing reactants (e.g., silanes), inert substances, or combinations thereof. Exemplary reactants include, but are not limited to, fluorine-based substances such as carbon tetrafluoride (CF4), nitrogen trifluoride (NF3), sulfur hexafluoride (SF6), fluoromethane (CH3F), difluoromethane (CH2F2), silicon tetrafluoride (SiF4), hexafluorobutadiene (C4F6), hexafluoroethane (C2F6), tetrafluoroethylene (C2F4), xenon difluoride (XeF2), or molecular fluorine (F2). Exemplary reactants may include, but are not limited to, chlorine-based substances such as molecular chlorine (Cl2), hydrogen chloride (HCl), or boron trichloride (BCl3), or bromine-based substances such as molecular bromine (Br2) or hydrogen bromide (HBr). Exemplary reactants may include oxygen-containing substances such as oxygen (O2), nitrous oxide (N2O), carbonyl sulfide (COS), or carbon monoxide (CO); carbon-containing substances such as methane (CH4); hydrogen-containing substances such as molecular hydrogen (H2) or ammonia (NH3); nitrogen-containing substances such as molecular nitrogen (N2); sulfur-containing substances such as hydrogen sulfide (H2S); or inert substances such as argon (Ar) or helium (He). In some embodiments, exemplary reactants may include silicon-containing substances such as silane (SiH4), disilane (Si2H6), propane (Si3H8), or aminosilane, wherein exemplary aminosilanes may include, but are not limited to, bis(tert-butylamino)silane (BTBAS), N-(diethylaminosilyl)-N-ethylethylamine (SAM-24), tris(dimethylamino)silane (3DMAS), and tetra(dimethylamino)silane (4DMAS). Other examples of silicon-containing substances include tetraethyl orthosilicate (TEOS), tetramethoxysilane (TMOS), methylsilane, trimethylsilane (3MS), ethylsilane, butylsilane, pentasilane, octasilane, heptylsilane, hexasilane, cyclobutylsilane, cycloheptylsilane, cyclohexylsilane, cyclooctylsilane, cyclopentylsilane, 1,4-dioxa-2,3,5,6-tetrasilcyclohexane, dihydroethoxymethylsilane (DEMS), diethoxysilane (DES), dimethoxymethylsilane, dimethoxysilane (DMOS), methyldiethoxysilane (… MDES), methyl dimethoxysilane (MDMS), tert-butoxydisilane, triethoxysilane (TES), trimethoxysilane (TMS), octamethylcyclotetrasiloxane (OMCTS), octamethoxydodecylsiloxane (OMODDS), tetramethylcyclotetrasiloxane (TMCTS), triethoxysiloxane (TRIES), tetraoxymethylcyclotetrasiloxane (TOMCTS), dichlorosilane (DCS), hexachlorodisilane (HCDS), tetrachlorosilane (SiCl4), trichlorosilane (SiHCl3), etc.During treatment using capacitively coupled plasma 444, any of the aforementioned reactants can be used in combination with each other.

[0075] RF generator 438 generates RF power and outputs it to base 412. In some embodiments, the frequency generated by RF generator 438 is between about 10 Hz and about 500 kHz, for example, 3.5 kHz, or between about 50 kHz and about 500 kHz, for example, about 400 kHz. In some embodiments, the power supplied to RF generator 438 is between about 10 W and about 8000 W, between about 100 W and about 6000 W, or between about 100 W and about 5000 W, for example, about 3500 W. RF generator 436 for generating inductively coupled plasma 442 can be configured to deliver higher RF power and a higher frequency than RF generator 438 for generating capacitively coupled plasma 444. The RF power supplied to base 412 by RF generator 438 can generate a sufficient electromagnetic field using nozzle 404 to ignite one or more second gases to form capacitively coupled plasma 444. The controller 490 can control the RF power transmitted to the RF generator 438 for generating capacitively coupled plasma 444.

[0076] The capacitively coupled plasma 444 may contain ions and radicals of one or more second gases. The capacitively coupled plasma 444 may be confined within an aperture 406 of the nozzle 404. Ions and radicals of one or more second gases may be provided in the gap between the nozzle 404 and the base 412. During processing of the substrate 414, the substrate 414 may be exposed to ions and radicals of one or more second gases from the capacitively coupled plasma 444.

[0077] In some embodiments, capacitively coupled plasma 444 modifies substrate 414 in a first step, and inductively coupled plasma 442 modifies substrate 414 in a second step. Alternatively, inductively coupled plasma 442 modifies substrate 414 in a first step, and capacitively coupled plasma 444 modifies substrate 414 in a second step. In any case, the integration of CCP generation chamber 403 and ICP generation chamber 402 enables the use of both capacitively coupled plasma 444 and inductively coupled plasma 442 to process the substrate in a two-step process without transferring the substrate.

[0078] Although plasma apparatus 400 shows RF generators 436 and 438 as different plasma generators for generating inductively coupled plasma 442 and capacitively coupled plasma 444, respectively, plasma apparatus 400 may employ a single RF generator to generate both inductively coupled plasma 442 and capacitively coupled plasma 444. In this case, a single RF generator may be provided to supply power to ICP generation chamber 402 (e.g., via coil 434) to power inductively coupled plasma 442 or to supply power to CCP generation chamber 403 (e.g., via base 412 or nozzle 404) to power capacitively coupled plasma 444. For example, a split-wave input RF (SiRF) or other power divider may be used to distribute RF power from a single RF generator to ICP generation chamber 402 or CCP generation chamber 403.

[0079] In some embodiments, controller 490 is operatively connected to plasma device 400. In some embodiments, controller 490 may be connected to RF generator 436 to control plasma parameters and / or conditions in ICP generation chamber 402, and may be connected to RF generator 438 to control plasma parameters and / or conditions in CCP generation chamber 403. In some embodiments, controller 490 may be connected to base 412 to control base height, base tilt, base rotation, electrostatic clamping and declamping, and temperature. In some embodiments, controller 490 may be connected to a gas delivery system to control the delivery of one or more first gases to ICP generation chamber 402 and the delivery of one or more second gases to CCP generation chamber 403. The controller 490 can control other processing conditions, such as RF power setting, frequency setting, duty cycle, pulse time, pressure in ICP generation chamber 402, pressure in CCP generation chamber 403, temperature of base 412, temperature of ICP generation chamber 402, temperature of CCP generation chamber 403, temperature of nozzle 404, gas composition and mixture, and gas flow rate.

[0080] Controller 490 may contain instructions for controlling process conditions for the operation of plasma apparatus 400. Controller 490 typically includes one or more memory devices and one or more processors. The processor may include a CPU or computer, analog and / or digital input / output connections, a stepper motor controller board, etc. Instructions for implementing appropriate control operations are executed on the processor. These instructions may be stored in the memory device associated with controller 490 or may be provided via a network.

[0081] In some embodiments, controller 490 controls all or most of the activities of the plasma apparatus 400 described herein. For example, controller 490 may control all or most of the activities of the plasma apparatus 400 associated with: depositing a first layer on substrate 414, depositing a second layer on the first layer, processing the first layer, etching the first layer, and other substrate processing or chamber operations. Controller 490 may execute system control software containing a set of instructions for controlling timing, gas composition, gas flow rate, chamber pressure, chamber temperature, RF power level, substrate position, substrate temperature, DC clamping voltage, release procedure, and / or other parameters. In some embodiments, additional computer programs, scripts, or programs may be employed, stored on a memory device associated with controller 490. In a multi-station reactor, controller 490 may contain different or identical instructions for different stations, thereby allowing the stations to operate independently or synchronously.

[0082] In some implementations, plasma device 400 may include a user interface associated with controller 490. The user interface may include a display of plasma device 400 and / or processing conditions, a graphical software display, and user input devices such as indicating devices, keyboards, touch screens, microphones, etc.

[0083] The computer program code used to control the above operations can be written in any conventional computer-readable programming language, such as assembly language, C, C++, Pascal, Fortran, etc. The compiled object code or script can be executed by a processor to perform the tasks specified in the program.

[0084] Signals used for process monitoring can be provided by analog and / or digital input connections of the system controller. Signals used for process control are output through analog and digital output connections of the processing system.

[0085] In a broad sense, a controller can be defined as an electronic device having various integrated circuits, logic, memory, and / or software for receiving instructions, issuing instructions, controlling operations, enabling cleaning operations, enabling endpoint measurements, etc. Integrated circuits can include chips in the form of firmware storing program instructions, digital signal processors (DSPs), chips defined as application-specific integrated circuits (ASICs), and / or one or more microprocessors or microcontrollers that execute program instructions (e.g., software). Program instructions can be instructions sent to the controller in the form of various individual settings (or program files), which define operating parameters for performing a specific process on or for a semiconductor wafer or system. In some embodiments, operating parameters can be part of a recipe defined by a process engineer to complete one or more processing steps during the fabrication of one or more layers, materials (e.g., silicon nitrides), surfaces, circuits, and / or wafer dies.

[0086] In some implementations, the controller may be part of or coupled to a computer integrated with, coupled to, or otherwise networked to the system, or a combination thereof. For example, the controller may be in the “cloud” or be all or part of a fab host system, allowing remote access to wafer processing. The computer may enable remote access to the system to monitor the current progress of manufacturing operations, examine the history of past manufacturing operations, examine trends or performance criteria of multiple manufacturing operations, change parameters of the current process, set processing steps to follow the current process, or start a new process. In some examples, a remote computer (e.g., a server) may provide process recipes to the system via a network (which may include a local network or the Internet). The remote computer may include a user interface that enables input or programming of parameters and / or settings, which are then sent from the remote computer to the system. In some examples, the controller receives instructions in the form of data specifying parameters for each processing step to be performed during one or more operations. It should be understood that the parameters may be specific to the type of process to be performed and the type of tool, to which the controller is configured to interface with or control the tool. Therefore, as described above, a controller can be distributed, for example, by comprising one or more discrete controllers networked together and operating toward a common purpose (such as the process and control described herein). An example of a distributed controller for such a purpose is one or more integrated circuits on-site communicating with one or more integrated circuits remotely (e.g., at the platform level or as part of a remote computer), which together control the process on-site.

[0087] Figure 5A Showing Figure 4A simplified schematic diagram of a plasma device, which, according to some implementations, uses an inductively coupled plasma chamber to generate remote plasma during substrate processing. Figure 5B Showing Figure 4 A simplified schematic diagram of a plasma device, which, according to some implementations, uses a capacitively coupled plasma chamber to generate direct plasma during substrate processing. The substrate 414 in the CCP generation chamber 403 can be processed by both inductively coupled plasma 442 and capacitively coupled plasma 444.

[0088] exist Figure 5A In this process, one or more first gases 452 may be supplied to the ICP generation chamber 402 via a gas injector 432. As described above, the one or more first gases 452 may contain oxygen-containing reactants, nitrogen-containing reactants, hydrogen-containing reactants, carbon-containing reactants, or combinations thereof. In one example, the one or more first gases 452 contain molecular hydrogen mixed with an inert gas such as helium or argon. In another example, the one or more first gases 452 contain a gas mixture of nitrogen, ammonia, and hydrogen, wherein the gas mixture may also contain an inert gas such as helium or argon.

[0089] ICP generation chamber 402 generates an inductively coupled plasma 442 of one or more first gases 452. Controller 490 may be communicated with RF generator 436 to deliver RF power to coil 434 to ignite the inductively coupled plasma 442. The inductively coupled plasma 442 may contain plasma activating materials (e.g., ions and radicals) of one or more first gases 452. In some embodiments, the plasma activating material of the inductively coupled plasma 442 contains excited nitrogen radicals (N*), hydrogen radicals (H*), and / or ammonia radicals (NH* or NH2*). In some embodiments, the plasma activating material of the inductively coupled plasma 442 contains excited hydrogen radicals (H*). Nozzle 404 may filter out ions from the inductively coupled plasma 442 to prevent them from reaching CCP generation chamber 403. Specifically, a plurality of through-holes 460 of nozzle 404 are configured to filter ions from the inductively coupled plasma 442.

[0090] Radicals (e.g., nitrogen, hydrogen, and / or ammonia radicals) from inductively coupled plasma 442 flow toward substrate 414 into CCP generation chamber 403. These radicals are used to process substrate 414. In one example, inductively coupled plasma 442 is used to assist in the deposition of a dielectric layer on substrate 414. By “assisting” the deposition of the dielectric layer on substrate 414, the charged and uncharged components of inductively coupled plasma 442 participate in the deposition reaction, for example, by interacting directly with materials on the substrate surface or with other gases (e.g., precursor gases) to deposit the dielectric layer on the substrate surface. In some embodiments, one or more precursor gases are supplied to CCP generation chamber 403 to interact with the radicals of inductively coupled plasma 442 in the environment adjacent to substrate 414. For example, one or more precursor gases may be supplied to CCP generation chamber 403 via gas port 472 of nozzle 404. One or more precursor gases can be delivered from the gas delivery system to the inflation section of the nozzle 404, which is in fluid communication with the gas port 472 but not with the through hole 460.

[0091] In some embodiments, the one or more precursor gases comprise a silicon-containing precursor. The silicon-containing precursor may belong to a chemical category. In some embodiments, the silicon-containing precursor is a siloxane. Examples of siloxanes include, but are not limited to, 2,4,6,8-tetramethylcyclotetrasiloxane (TMCTS), octamethylcyclotetrasiloxane (OMCTS), heptamethylcyclotetrasiloxane (HMCTS), octamethoxydodecylsiloxane (OMODDS), triethoxysiloxane (TRIES), tetraoxomethylcyclotetrasiloxane (TOMCTS), pentamethyldisiloxane (PMDSO), tetramethyldisiloxane (TMDSO), hexamethyltrisiloxane, and heptamethyltrisiloxane. In some embodiments, the silicon-containing precursor is an alkylsilane. Examples of alkylsilanes include, but are not limited to, tetraethyl orthosilicate (4MS), trimethylsilane (3MS), triethylsilane, pentamethyldisiloxane ((CH3)2Si-CH2-Si(CH3)3), dimethylsilane (2MS), methylsilane, ethylsilane, hexamethyldisilane (HMDS), and pentamethyldisilane (PMDS). In some embodiments, the silicon-containing precursor is an alkoxysilane. Examples of alkoxysilanes include, but are not limited to, trimethoxysilane (TMOS), dimethoxysilane (DMOS), methoxysilane (MOS), diethoxysilane (DES), triethoxysilane (TES), trimethoxysilane (TMS), methyldimethoxysilane (MDMOS), diethoxymethylsilane (DEMS), dimethylethoxysilane (DMES), and dimethylmethoxysilane (DMMOS). In some embodiments, the silicon-containing precursor is a silazane. Examples of silazanes include, but are not limited to, methyl-substituted disilazanes and triilazanes, such as tetramethyldisilazane and hexamethyltriilazane. In some embodiments, the silicon-containing precursor is a silane, ethylsilane, propane, butane, pentasilane, octasilane, heptasilane, hexasilane, or other polysilane. In some embodiments, the silicon-containing precursor is a cyclic silane, such as cyclobutane, cycloheptane, cyclohexane, cyclooctane, or cyclopentane. In some embodiments, the silicon-containing precursor is an aminosilane. Examples of aminosilanes include, but are not limited to, bis(tert-butylamino)silane, N-(diethylaminosilyl)-N-ethylethylamine, tri(dimethylamino)silane, and tetra(dimethylamino)silane. In some embodiments, the silicon-containing precursor is a halosilane. Examples of halosilanes include, but are not limited to, dichlorosilane, hexachlorodisilazane, tetrachlorosilane, and trichlorosilane.

[0092] In some embodiments, one or more co-reactant gases may flow into the CCP generation chamber 403 from gas port 472 together with one or more precursor gases. Examples of co-reactant gases include, but are not limited to, oxygen, nitrogen, ammonia, carbon dioxide, carbon monoxide, water, methanol, ozone, methane, ethane (C2H6), acetylene (C2H2), ethylene (C2H4), and diborane (B2H6).

[0093] Radicals from the inductively coupled plasma 442 can react with one or more precursor gases in the environment adjacent to the substrate 414 within the CCP generation chamber 403. The reaction of the radicals with the precursor gases can deposit a thin film, for example, forming a dielectric layer on the substrate 414 via a vapor deposition process (e.g., ALD or CVD). In some embodiments, the radicals can transition from an excited energy state to a lower energy state or a ground state upon reaction with one or more precursor gases in the CCP generation chamber 403. In some embodiments, the radicals can react together with one or more co-reactant gases along with the precursor gases, wherein the co-reactant gases can influence the composition of the deposited thin film. In some embodiments, the reaction of the radicals with one or more precursor gases deposits a silicon-containing film on the substrate 414. Examples of silicon-containing films include, but are not limited to, amorphous silicon (a-Si) and silicon oxide (SiO2). x ), silicon carbide (SiC), silicon nitride (Si) x N y ), silicon oxycarbonate (SiCO), silicon oxynitride (SiON), silicon carbonitride (SiCN), and silicon oxycarbonate (SiOCN).

[0094] In some embodiments, the radicals of the inductively coupled plasma 442 are used to treat or etch a material layer on the substrate 414. In this case, the radicals of the inductively coupled plasma 442 do not interact with one or more precursor gases. Instead, the substrate 414 can be directly exposed to the radicals of the inductively coupled plasma 442. Such radicals may include, for example, hydrogen radicals (H*), halide radicals (e.g., F*, Cl*), hydrocarbon radicals (e.g., CH*), fluorocarbon radicals (e.g., CF*), amine radicals (e.g., NH*), or combinations thereof.

[0095] exist Figure 5B In this process, one or more second gases 454 may be supplied to the CCP generation chamber 403. For example... Figure 5B As shown, one or more second gases 454 may be supplied to the CCP generation chamber 403 via gas port 472, but alternative delivery methods may be implemented. As described above, one or more second gases 454 may include fluorine-containing reactants or other halogen-containing reactants, nitrogen-containing reactants, oxygen-containing reactants, hydrogen-containing reactants, sulfur-containing reactants, carbon-containing reactants (e.g., hydrocarbons), silicon-containing reactants (e.g., silanes), inert substances, or combinations thereof. In one example, one or more second gases 454 comprise nitrogen trifluoride or molecular hydrogen mixed with nitrogen trifluoride. In another example, one or more second gases 454 comprise molecular oxygen and / or molecular chlorine. In yet another example, one or more second gases 454 comprise fluorocarbons, such as fluoromethane.

[0096] CCP generation chamber 403 generates capacitively coupled plasma 444 of one or more second gases 454. Controller 490 can communicate with RF generator 438 to transmit RF power to base 412 while grounding nozzle 404 to ignite capacitively coupled plasma 444. Capacitively coupled plasma 444 may include plasma activating materials (e.g., ions and radicals) of one or more second gases 454. The radicals, ions, and other active materials of capacitively coupled plasma 444 can react directly with substrate 414 to treat substrate 414.

[0097] In some embodiments, the radicals, ions, and other active substances of capacitively coupled plasma 444 can react with substrate 414 to deposit a thin film on substrate 414. For example, the material layer deposited by capacitively coupled plasma can be a dielectric film, such as a silicon-containing film. In one example, capacitively coupled plasma 444 can deposit a stretched film, while inductively coupled plasma 442 can assist in the deposition of a compressed film.

[0098] In some embodiments, the radicals, ions, and other active substances of the capacitively coupled plasma 444 can etch or process material layers on the substrate 414. When etching or processing the substrate 414, the capacitively coupled plasma 444 can provide directional etching / inhibition with controlled depth. When etching the material layers on the substrate 414, etchant chemicals such as oxy-based, hydrogen-based, or fluorine-based etchants can be used to utilize the capacitively coupled plasma 444 to remove portions of the material layers. In some embodiments, the capacitively coupled plasma 444 is used to assist in etching or partially etching the dielectric layer on the substrate 414. By “assisting” the etching or partial etching of the dielectric layer on the substrate 414, the charged and uncharged substances of the capacitively coupled plasma 444 participate in the reaction to remove material from the substrate 414, for example, by interacting directly with the dielectric layer on the substrate surface or by interacting with other gases that etch away at least a portion of the dielectric layer from the substrate surface. The capacitively coupled plasma 444 can include fluoride ions and / or radicals from fluorine-based etchants such as nitrogen trifluoride. In some cases, fluoride ions and / or radicals can provide tapered or non-conformal etching of the material layers. When processing the material layer on substrate 414, capacitively coupled plasma 444 can provide ion bombardment to densify the material layer. Ions in capacitively coupled plasma 444 can densify layers such as oxide layers, nitride layers, or carbide layers in a more efficient manner than free radicals used in inductively coupled plasma 442. In some embodiments, capacitively coupled plasma 444 can use different active materials than inductively coupled plasma 442 to tune the film properties of the material layer. For example, capacitively coupled plasma 444 can be used to tune the stress, composition, doping, dielectric constant, chemical resistance, thermal resistance, density, or feature profile of the material layer.

[0099] like Figure 5A and Figure 5B As shown, the plasma device 400 can operate in either ICP or CCP mode. Figure 5A The substrate 414 is processed in ICP mode using inductively coupled plasma 442 generated in ICP generation chamber 402, rather than capacitively coupled plasma 444 generated in CCP generation chamber 403. Figure 5B The substrate 414 is processed in CCP mode using capacitively coupled plasma 444 generated in CCP generation chamber 403, rather than inductively coupled plasma 442. It should be understood that the substrate 414 can be processed first using inductively coupled plasma 442 and then using capacitively coupled plasma 444, or vice versa.

[0100] Figure 6 This diagram shows a nozzle associated with a base used in a plasma device, which, according to some implementations, integrates an inductively coupled plasma chamber for generating remote plasma and a capacitively coupled plasma chamber for generating direct plasma.

[0101] The gas microvolume in the gap between nozzle 404 and base 412 is controllable. The gap height 470 between nozzle 404 and base 412 can be adjusted by changing the position of base 412 (or nozzle 404). This allows for precise control of the microvolume when processing substrate 414 using capacitively coupled plasma 444 or inductively coupled plasma 442. The smaller gap height 470 between nozzle 404 and base 412 prevents the depletion of free radicals and / or ions in the microvolume. In some embodiments, the gap height 470 is between about 0.01 inches and about 5 inches, between about 0.02 inches and about 3 inches, or between about 0.05 inches and about 2 inches.

[0102] Additionally, the downward protrusion 407 of the nozzle 404 confines the generation of the capacitively coupled plasma 444 within a small volume between the nozzle 404 and the base 412. The inner wall of the downward protrusion 407 and the top surface of the base 412 provide a tight constriction space to minimize airflow around the edges of the base 412. The gap distance 480 between the inner wall of the downward protrusion 407 and the top surface of the base 412 is configured to prevent or otherwise confine the formation of parasitic plasma around the edges of the base 412. Thus, the capacitively coupled plasma 444 is provided only in the desired area of ​​the CCP generation chamber 403. In some embodiments, the gap distance 480 is between about 0.001 inches and about 2 inches, between about 0.01 inches and about 1 inch, or between about 0.02 inches and about 0.5 inches.

[0103] Furthermore, the via 460 is designed to filter out ions from the inductively coupled plasma 442 while allowing free radicals from the inductively coupled plasma 442 to pass through. Simultaneously, the via 460 is designed to limit any charge accumulation from the capacitively coupled plasma 444 in the nozzle 404. In other words, the via 460 prevents or otherwise limits the formation of parasitic plasma within or at the edge of the via 460.

[0104] Figure 7 A flowchart illustrating an exemplary method for processing a substrate using inductively coupled plasma and capacitively coupled plasma according to some embodiments is shown. The operations of process 700 may be performed in different sequences and / or utilizing different, fewer, or additional operations. One or more operations of process 700 may use... Figure 3 , Figure 4 , Figure 5A , Figure 5B and Figure 6 The process 700 may be performed using a plasma apparatus as described in any of the above embodiments. In some implementations, the operation of process 700 may be implemented, at least in part, based on software stored in one or more non-transient computer-readable media.

[0105] At block 710 of process 700, an inductively coupled plasma is generated in a remote plasma chamber to assist in the deposition of a first layer on a substrate in a processing chamber. The remote plasma chamber and the processing chamber are fluidly connected to each other via a nozzle positioned between them. An RF generator is electrically coupled to a coil surrounding the remote plasma chamber. The RF generator is configured to provide RF power to the remote plasma chamber to ignite the inductively coupled plasma.

[0106] One or more first gases flow into a remote plasma chamber. These first gases may contain oxygen-containing reactants, nitrogen-containing reactants, hydrogen-containing reactants, carbon-containing reactants, or combinations thereof. For example, one or more first gases may contain molecular hydrogen mixed with an inert gas such as argon or helium. An RF generator is configured to power the remote plasma chamber to ionize the one or more first gases, thereby forming radicals, ions, and other active substances of the one or more first gases. A nozzle is configured to filter out the ions while simultaneously allowing the radicals from the inductively coupled plasma to be transported to a processing chamber.

[0107] In some embodiments, a precursor gas flows toward the substrate into the processing chamber. The precursor gas can flow into the processing chamber through a gas outlet located downstream of a remote plasma source. Alternatively, the precursor gas can flow into the processing chamber through a gas port in the nozzle that is not in fluid communication with the remote plasma source. This avoids interaction of the precursor gas with the free radicals of the inductively coupled plasma before it enters the processing chamber. In some embodiments, the precursor gas contains a silicon-containing precursor. The precursor gas can react with the free radicals of the inductively coupled plasma in the environment adjacent to the substrate. The free radicals of the inductively coupled plasma can relax or transition from an excited energy state to a lower energy state (e.g., the ground state) in the processing chamber. The precursor gas reacts with the free radicals of the inductively coupled plasma to deposit a first layer on the substrate. In some embodiments, the first layer is a dielectric layer, such as silicon oxide, doped or undoped silicon carbide, or doped or undoped silicon nitride.

[0108] At frame 720 of process 700, capacitively coupled plasma is generated in a processing chamber to assist in the etching or processing of the first layer, or to assist in the deposition of a second layer on the substrate. The capacitively coupled plasma is formed in a microvolume or space between the nozzle and the base. The base may hold, clamp, clamp, or otherwise support the substrate. An RF generator is electrically coupled to the base. The RF generator is configured to provide RF power to the base when the nozzle is grounded, thereby creating an electric field between the energized electrode (i.e., the base) and the grounded electrode (i.e., the nozzle) to ignite and sustain the capacitively coupled plasma.

[0109] One or more second gases flow into the processing chamber. These second gases may contain fluorine-containing reactants or other halogen-containing reactants, nitrogen-containing reactants, oxygen-containing reactants, hydrogen-containing reactants, sulfur-containing reactants, carbon-containing reactants (e.g., hydrocarbons), silicon-containing reactants (e.g., silanes), inert substances, or combinations thereof. For example, one or more second gases may contain nitrogen trifluoride or nitrogen trifluoride mixed with molecular hydrogen. The RF generator is configured to power the substrate when the nozzle is grounded to ionize the one or more second gases, thereby forming radicals, ions, and other reactive substances of the one or more second gases. The substrate is directly exposed to the radicals, ions, and other reactive substances of the one or more second gases.

[0110] The base height can be adjusted to confine the capacitively coupled plasma within a micro-volume or space between the base and the nozzle. Additionally, the nozzle may include a flat base and a downwardly projecting portion surrounding the periphery of the flat base, wherein the inner wall of the downwardly projecting portion and the flat base define an orifice for the nozzle. The base height can be adjusted such that a narrow gap is formed between the inner wall of the downwardly projecting portion and the edge of the base. This narrow gap and base height ensure that the capacitively coupled plasma is confined within the micro-volume or space between the base and the nozzle.

[0111] In some embodiments, capacitively coupled plasma (CCP) can be used to etch the first layer of a substrate. The etching can be depth-controlled and directional to achieve a desired etch profile and depth. In some embodiments, non-conformal or tapered etching is performed on the first layer of the substrate. For example, CCP may remove more of the first layer at the top of a feature than at the bottom. In some cases, CCP uses ions and radicals of a fluorine-containing substance, such as nitrogen trifluoride, to non-conformally etch the first layer of the substrate.

[0112] In some implementations, capacitively coupled plasma (CCP) can be used to treat the first layer of a substrate. This treatment can modulate the properties of the first layer. Ions and radicals in the CCP can be used to modulate the stress, composition, doping, dielectric constant, chemical resistance, thermal resistance, density, or characteristic inner profile of the first layer. In some cases, CCP uses ion bombardment to densify the first layer of the substrate.

[0113] In some implementations, capacitively coupled plasma can be used to deposit a second layer on a first layer of a substrate. The second layer can have different properties than the first layer. In some cases, the first layer deposited using inductively coupled plasma can have tensile stress, while the second layer deposited using capacitively coupled plasma can have compressive stress.

[0114] The generation of capacitively coupled plasma and inductively coupled plasma for substrate treatment can be performed without transferring the substrate to another station, module, or tool. Although process 700 uses inductively coupled plasma to treat the substrate prior to capacitively coupled plasma, it should be understood that process 700 may use capacitively coupled plasma to treat the substrate prior to inductively coupled plasma.

[0115] Multi-station device Figure 8 A schematic diagram of an exemplary processing tool comprising multiple stations is shown, wherein, according to some implementations, one or more stations are each configured to generate inductively coupled plasma and capacitively coupled plasma.

[0116] Figure 8A schematic diagram of an implementation of a multi-station processing apparatus 800 having an inbound loading lock 802 and an outbound loading lock 804 is shown, wherein either or both of the inbound loading lock 802 and the outbound loading lock 804 may contain a remote plasma source. A robot 806, operating at atmospheric pressure, is configured to move a wafer from a cassette loaded via a container 808 to the inbound loading lock 802 via an atmospheric port 810. The robot 806 places the wafer on a base 812 within the inbound loading lock 802, closes the atmospheric port 810, and evacuates the loading lock. When the inbound loading lock 802 contains a remote plasma source, the wafer can be exposed to the remote plasma to process the substrate surface in the loading lock before being introduced into the processing chamber 814. Furthermore, the wafer can also be heated within the inbound loading lock 802 to remove, for example, moisture and adsorbed gases. Next, the chamber transfer port 816 leading to the processing chamber 814 is opened, and another robot (not shown) places the wafer into the reactor on the base of the first station in the reactor shown for processing. Although Figure 8 The implementation shown includes a load lock, but it should be understood that in some implementations, the wafer can be sent directly to the processing station.

[0117] The depicted processing room 814 contains four processing stations. Figure 8 The implementations shown are numbered 1 through 4. Each station has a heated base (shown as 818 in station 1) and a gas line inlet. It should be understood that in some embodiments, each processing station may have different or multiple purposes. For example, in some embodiments, the processing station may be configured to perform deposition and etching operations. In some embodiments, the processing station may be configured to perform deposition and processing operations. In some embodiments, the processing station may be configured to perform etching and processing operations. In some embodiments, the processing station may be configured for deposition operations only. Although the depicted processing chamber 814 contains four stations, it should be understood that the processing chamber 814 according to this disclosure may have any suitable number of stations. For example, in some embodiments, the processing chamber 814 may have five or more stations, while in other embodiments, the processing chamber 814 may have three or fewer stations.

[0118] The multi-station processing apparatus 800 includes multiple processing stations. At least one station can be configured to generate capacitively coupled plasma in a CCP generation chamber and inductively coupled plasma in an ICP generation chamber, wherein a nozzle separates the CCP generation chamber from the ICP generation chamber. Wafers can be supported on a pedestal in the CCP generation chamber for processing. The ICP generation chamber can be a remote plasma source in fluid communication with the CCP generation chamber. In some embodiments, the ICP generation chamber can be configured to generate inductively coupled plasma containing radicals and ions of one or more first gases, while the CCP generation chamber can be configured to generate radicals and ions of one or more second gases. The nozzle filters out ions from the inductively coupled plasma.

[0119] Figure 8 An implementation of a wafer processing system 890 for transferring wafers within a processing chamber 814 is depicted. In some embodiments, the wafer processing system 890 can transfer wafers between individual processing stations and / or between processing stations and loading locks. It should be understood that any suitable wafer processing system can be employed. Non-limiting examples include wafer turntables and wafer processing robots. Figure 8 The implementation scheme of the system controller 850 for controlling the processing conditions and hardware status of the multi-station processing unit 800 is also shown. The system controller 850 may include one or more memory devices 856, one or more mass storage devices 854, and one or more processors 852. The processor 852 may include a CPU or computer, analog and / or digital input / output connections, stepper motor controller board, etc.

[0120] In some implementations, system controller 850 controls all activities of the multi-station processing unit 800. System controller 850 executes system control software 858 stored in mass storage device 854, loaded into memory device 856, and executed on processor 852. Alternatively, the control logic may be hard-coded in system controller 850. Application-specific integrated circuits (ASICs), programmable logic devices (e.g., field-programmable gate arrays or FPGAs), etc., may be used for these purposes. In the following discussion, whenever “software” or “coding” is used, functionally equivalent hard-coded logic can be used instead. System control software 858 may contain parameters for controlling timing, gas mixtures, gas flow rates, chamber and / or station pressures, chamber and / or station temperatures, wafer temperatures, target power levels, RF power levels, substrate pedestals, chuck and / or carriage positions, and other parameters for specific processes performed by multi-station processing unit 800. System control software 858 can be configured in any suitable manner. For example, numerous processing tool component subroutines or control objects can be written to control the operation of processing tool components used to perform various processing tooling processes. The system control software 858 can be written in any suitable computer-readable programming language.

[0121] In some implementations, system controller 850 may be configured to perform the following operations: generate inductively coupled plasma in an ICP generation chamber for depositing a first layer on a wafer, and generate capacitively coupled plasma in a CCP generation chamber to etch or process the first layer, or deposit a second layer on the first layer of the wafer. Multiple stations in processing chamber 814 may be configured to process wafers in the stations using either capacitively coupled plasma or inductively coupled plasma. If the wafer is initially processed using capacitively coupled plasma or inductively coupled plasma, there is no need to transfer the wafer to downstream tools or applications for further processing using other types of plasma technologies.

[0122] In some embodiments, system control software 858 may include input / output control (IOC) sequencing instructions for controlling the various parameters described above. In some embodiments, other computer software and / or programs may be employed, stored on a mass storage device 854 and / or a memory device 856 associated with system controller 850. Examples of programs or program segments used for this purpose include substrate positioning programs, process gas control programs, pressure control programs, heater control programs, and plasma control programs.

[0123] As described above, depending on one or more processing steps to be performed by the tool, the system controller 850 may communicate with one or more other tool circuits or modules, other tool components, cluster tools, other tool interfaces, adjacent tools, neighboring tools, tools located throughout the plant, a host computer, another controller, or tools used in the transport of materials to and from the tool location and / or loading port in the semiconductor manufacturing plant.

[0124] in conclusion It should be understood that the examples and embodiments described herein are for illustrative purposes only and will suggest various modifications or changes to be made based thereon to those skilled in the art. Although various details have been omitted for clarity, many design alternatives can be implemented. Therefore, this example should be considered illustrative rather than restrictive, and this disclosure is not limited to the details presented herein, but can be modified within the scope of this disclosure.

Claims

1. A plasma processing apparatus, comprising: Inductively coupled plasma (ICP) generation chamber; A capacitor-coupled plasma (CCP) generation chamber separate from the ICP generation chamber; A nozzle located between the CCP generation chamber and the ICP generation chamber, wherein the CCP generation chamber and the ICP generation chamber are in fluid communication with each other through the nozzle; and A base, which is configured to support a substrate in the CCP generation chamber.

2. The plasma processing apparatus of claim 1, wherein the ICP generation chamber is configured to generate an inductively coupled plasma containing free radicals and ions of one or more first gases, and wherein the CCP generation chamber is configured to generate a capacitively coupled plasma containing free radicals and ions of one or more second gases, wherein the nozzle is configured to filter out ions from the inductively coupled plasma.

3. The plasma processing apparatus according to claim 2, wherein the capacitively coupled plasma modifies the substrate in the first step and the inductively coupled plasma modifies the substrate in the second step.

4. The plasma processing apparatus according to claim 2, wherein the inductively coupled plasma modifies the substrate in the first step and the capacitively coupled plasma modifies the substrate in the second step.

5. The plasma processing apparatus of claim 2, wherein the base is powered by an RF generator and the nozzle is grounded to generate the capacitively coupled plasma in the CCP generation chamber.

6. The plasma processing apparatus according to claim 1, wherein the nozzle comprises: Flat base; and A downward protrusion having an inner wall and an outer wall and positioned along the periphery of the flat base, wherein the inner wall of the downward protrusion and the flat base define the orifice of the nozzle.

7. The plasma processing apparatus of claim 6, wherein the nozzle further comprises: a plurality of through holes configured to filter out ions in the inductively coupled plasma generated in the ICP generation chamber.

8. The plasma processing apparatus of claim 7, wherein the nozzle includes a groove configured to circulate coolant through the nozzle.

9. The plasma processing apparatus of claim 8, wherein the CCP generation chamber is configured to generate the capacitively coupled plasma and confine it within the orifice of the nozzle.

10. The plasma processing apparatus of claim 6, wherein the base is configured to be inclined such that the main surface of the base is parallel to the main surface of the flat base of the nozzle.

11. The plasma processing apparatus according to claim 1, further comprising: A first RF generator coupled to the ICP generation chamber; and A second RF generator coupled to the CCP generation chamber, wherein the first RF generator is configured to deliver higher RF power and a higher frequency than the second RF generator.

12. The plasma processing apparatus according to claim 1, further comprising: RF generator; and A power divider coupled to the RF generator, wherein the power divider is configured to transmit RF power through the RF generator to the ICP generation chamber or the CCP generation chamber.

13. The plasma processing apparatus according to claim 1, further comprising: A gas injector, which is in fluid communication with the ICP generation chamber for delivering one or more first gases to the ICP generation chamber; and One or more gas ports, which are in fluid communication with the nozzle but not with the ICP generation chamber, are used to deliver one or more second gases to the CCP generation chamber.

14. The plasma processing apparatus of claim 1, further comprising a controller configured to have instructions for performing the following operations: Inductively coupled plasma is generated in the ICP generation chamber to assist in the deposition of a dielectric layer on the substrate; and Capacitively coupled plasma is generated in the CCP generation chamber to assist in etching or partially etching the dielectric layer on the substrate.

15. The plasma processing apparatus of claim 14, wherein the controller is further configured to have instructions for performing the following operations: One or more precursor gases are directed toward the substrate, wherein free radicals of one or more first gases are provided by the inductively coupled plasma from the ICP generation chamber, wherein the one or more precursor gases react with the free radicals of the one or more first gases to deposit the dielectric layer on the substrate.

16. The plasma processing apparatus of claim 14, wherein the controller is further configured to have instructions for performing the following operations: One or more second gases are directed toward the substrate, wherein the capacitively coupled plasma comprises ions of the one or more second gases, to etch or partially etch the dielectric layer on the substrate.

17. The plasma processing apparatus of claim 1, further comprising a controller configured to have instructions for performing the following operations: Inductively coupled plasma is generated in the ICP generation chamber to assist in the deposition of a stretched film on the substrate; and Capacitively coupled plasma is generated in the CCP generation chamber to assist in the deposition of a compressed film on the substrate.

18. The plasma processing apparatus of claim 1, further comprising a controller configured to have instructions for performing the following operations: Inductively coupled plasma is generated in the ICP generation chamber to assist in film deposition on the substrate; and Capacitively coupled plasma is generated in the CCP generation chamber to assist in the treatment of the film on the substrate.

19. A multi-station processing device, comprising: Multiple processing stations, each containing: Inductively coupled plasma (ICP) generation chamber; A capacitor-coupled plasma (CCP) generation chamber separate from the ICP generation chamber; A nozzle located between the CCP generation chamber and the ICP generation chamber, wherein the CCP generation chamber and the ICP generation chamber are in fluid communication with each other through the nozzle; and A base, which is configured to support a substrate in the CCP generation chamber.

20. The multi-station processing apparatus of claim 19, wherein the ICP generation chamber is configured to generate an inductively coupled plasma containing free radicals and ions of one or more first gases, and wherein the CCP generation chamber is configured to generate a capacitively coupled plasma containing free radicals and ions of one or more second gases, wherein the nozzle is configured to filter out ions from the inductively coupled plasma.

21. The multi-station processing apparatus of claim 19, further comprising a controller configured to have instructions for performing the following operations: Inductively coupled plasma is generated in the ICP generation chamber for depositing a first layer on the substrate; and Capacitively coupled plasma is generated in the CCP generation chamber for etching or processing the first layer, or for depositing a second layer on the first layer of the substrate.

22. A method for processing a substrate, the method comprising: Inductively coupled plasma is generated in a remote plasma chamber to assist in the deposition of a first layer on the substrate in a processing chamber; and Capacitively coupled plasma is generated in the processing chamber to assist in etching or processing the first layer, or to deposit a second layer on the substrate.

23. The method of claim 22, wherein the remote plasma chamber and the processing chamber are in fluid communication with each other via a nozzle, wherein the nozzle is located between the remote plasma chamber and the processing chamber.

24. The method of claim 22, further comprising: A precursor gas is introduced into the processing chamber, wherein the precursor gas system reacts with the free radicals of the inductively coupled plasma to deposit the first layer on the substrate.

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