Semiconductor device, preparation method thereof and epitaxial wafer

Abstract

The invention relates to the field of semiconductors, and discloses a semiconductor device, a preparation method thereof and an epitaxial wafer. The semiconductor device comprises a substrate, a semiconductor film layer, a first electrode and a second electrode. The substrate comprises a first surface, the substrate is a monocrystalline-Ga2O3 substrate, and the first surface is a crystal face (100) or a crystal face (001) of monocrystalline-Ga2O3. The semiconductor film layer is arranged on the first surface of the substrate, and the semiconductor film layer comprises an n-type doped beta-phase aluminum indium gallium oxide film layer. The first electrodes and the second electrodes are arranged on the surface, away from the substrate, of the semiconductor film layer, and the first electrodes and the second electrodes are arranged at intervals in the first direction; and the included angle between the first direction and the [010] crystal orientation of the n-type doped beta-phase aluminum indium gallium oxide film layer is less than 10 degrees. The semiconductor device has the advantages of being high in electron mobility, low in loss and capable of being used in high-frequency application scenes.

Description

Technical Field

[0001] This application relates to the field of semiconductors, and in particular to a semiconductor device, its fabrication method, and an epitaxial wafer. Background Technology

[0002] Power semiconductor devices have wide applications in numerous fields such as electric power transportation, smart grids, and aerospace. The power characteristics of semiconductor materials are positively correlated with carrier mobility and bandgap. Wide bandgap semiconductors have higher breakdown electric fields, and their use can significantly reduce the size of semiconductor power modules such as DC-DC converters and DC-AC inverters, lower on-resistance, and improve energy conversion efficiency. Furthermore, in high-power applications, using wide bandgap semiconductors can reduce the number of transistors required, alleviating technical challenges such as voltage equalization, current equalization, and heat dissipation. Gallium oxide (GaN) Ga₂O₃, diamond, and aluminum nitride are currently the most studied ultrawide semiconductor materials. Compared to diamond and aluminum nitride, because... -Ga2O3 has shallow donor levels, and based on the partial thermal excitation effect of charge carriers, it makes... Ga2O3 possesses a higher Baliga figure of merit (BFOM), thus ensuring the fabrication of high-performance power semiconductor devices. However... -Ga2O3 has a relatively low electron mobility, generally below 190 cm⁻¹. 2 V -1 s -1 Therefore, keep The wide bandgap and improved electron mobility of Ga2O3 will drive... -Ga2O3-based semiconductor devices are being used more widely in high-voltage and high-frequency applications. Summary of the Invention

[0003] This application discloses a semiconductor device and its fabrication method and epitaxial wafer, to improve the performance of semiconductor devices based on... Ga2O3 improves electron mobility in semiconductor devices, reduces device losses, and expands high-frequency application scenarios.

[0004] In a first aspect, this application provides a semiconductor device, which includes a substrate, a semiconductor film layer, a first electrode, and a second electrode. The substrate includes a first surface and is a single crystal. -Ga2O3 substrate, with the first surface being a single crystal. -Ga2O3 has a (100) or (001) crystal plane. A semiconductor film is disposed on a first surface of the substrate, the semiconductor film including an n-type doped β-phase aluminum indium gallium oxide film. A first electrode and a second electrode are disposed on the surface of the semiconductor film away from the substrate, the first electrode and the second electrode are spaced apart along a first direction; the angle between the first direction and the

[010] crystal orientation of the n-type doped β-phase aluminum indium gallium oxide film is less than 10°.

[0005] In the semiconductor device of this application, an n-type doped β-phase aluminum indium gallium oxide film layer constitutes a semiconductor film layer, and the semiconductor film layer is connected to the first electrode and the second electrode of the semiconductor device to form the semiconductor device. The n-type doped β-phase aluminum indium gallium oxide film layer is connected to the single crystal... The Ga2O3 substrate is in contact with either the (100) or (001) crystal plane, and the first and second electrodes in the semiconductor device are both disposed on the surface of the semiconductor film. The angle between the arrangement direction of the first and second electrodes (i.e., the first direction) and the

[010] crystal orientation of the n-type doped β-phase aluminum indium gallium oxide film is less than 10°. This first direction is also the electron migration direction. Studies have shown that electrons can achieve a higher migration rate when migrating along the first direction, which helps to solve... The low electron mobility of Ga2O3 power devices can be addressed by improving carrier mobility. -Ga2O3 devices improve turn-on and turn-off rates, reduce switching losses, and enhance performance. - The dynamic characteristics of Ga2O3 devices and promote their application in high-frequency and other fields.

[0006] In one implementation, the semiconductor device is a Schottky diode, with a first electrode as the anode and a second electrode as the cathode. The anode and cathode are aligned along a first direction, which is also the direction of electron migration in the semiconductor device. Studies have shown that electrons can achieve a higher migration rate when migrating along the alignment direction between the anode and cathode, which helps to solve... The problem of low electron mobility in Ga2O3 power devices.

[0007] In one implementation, the semiconductor device is a metal-semiconductor field-effect transistor (MESFET). The semiconductor device also includes a third electrode, which is disposed on the surface of a semiconductor film layer between the first electrode and the second electrode. The third electrode is arranged along a first direction with the first electrode and the second electrode, where the first electrode is the source, the second electrode is the drain, and the third electrode is the gate.

[0008] In a metal-semiconductor field-effect transistor (MESFET), a semiconductor film composed of an n-type doped β-phase indium gallium aluminum oxide (IGaA) film is directly contacted with the source, drain, and gate of the semiconductor device to form the MESFET. The source, gate, and drain are arranged sequentially along a first direction, which is also the direction of electron migration in the semiconductor device. Studies have shown that higher electron migration rates can be achieved when electrons migrate along the arrangement direction between the source, gate, and drain, which helps to solve... The problem of low electron mobility in Ga2O3 power devices.

[0009] In one implementation, the semiconductor device is a metal-oxide-semiconductor field-effect transistor (MOSFET). The semiconductor device includes a third electrode and a dielectric layer. The dielectric layer is disposed on the surface of a semiconductor film layer between the first electrode and the second electrode. The third electrode is disposed on the surface of the semiconductor film layer. The third electrode is arranged along a first direction with the first electrode and the second electrode. The first electrode is the source, the second electrode is the drain, and the third electrode is the gate.

[0010] In a metal-semiconductor field-effect transistor (MOSFET), the semiconductor film composed of an n-type doped β-phase aluminum indium gallium oxide (IGa) film directly contacts the source and drain of the semiconductor device, while the gate contacts the semiconductor film through a dielectric layer, forming the MOSFET. The source, gate, and drain are arranged sequentially along a first direction, which is also the direction of electron migration in the semiconductor device. Studies have shown that higher electron migration rates are achieved when electrons migrate along the alignment direction between the source, gate, and drain, which helps to solve... The problem of low electron mobility in Ga2O3 power devices.

[0011] In one alternative implementation, the first direction is the same as the

[010] crystal orientation of the n-type doped β-phase indium gallium aluminum oxide film. When the first direction is the same as the

[010] crystal orientation of the n-type doped β-phase indium gallium aluminum oxide film, the electron mobility is higher, reaching 10... 16 cm -3 At electron concentrations, electron mobility can reach 500 cm⁻¹. 2 V -1 s -1 The above, and even up to 1000 cm 2 V -1 s -1 above.

[0012] In one alternative implementation, the chemical formula of the β-phase aluminum indium gallium oxide film in the n-type doped β-phase is β-(Al... x In y Ga 1-x-y)2O3, x and y satisfy: x>0, y>0, and x+y 0.1875, |xy|=0 or 0.03125. β-(Al x In y Ga 1-x-y )2O3 and The Ga2O3 substrate has a higher lattice matching degree, allowing for direct epitaxial growth. - β-(Al) phases of specific crystal phases are grown on the (100) or (001) crystal planes of a Ga2O3 substrate. x In y Ga 1-x-y )2O3 film layer, thereby making β-(Al x In y Ga 1-x-y )2O3 film and The lattice mismatch of the Ga2O3 substrate is reduced to less than 1%, decreasing the dislocation density at the interface between the two substrates, thereby further reducing semiconductor device losses and improving semiconductor device performance. High-quality n-type doped β-(Al2O3)3 substrates are grown epitaxially. x In y Ga 1-x-y )2O3 film layer can meet the requirements of high current and high power applications of semiconductor devices.

[0013] In one alternative implementation, β-(Al x In y Ga 1-x-y The band gap of 2O3 is greater than 4.68 eV. The high band gap allows semiconductor devices to operate in high-voltage, high-power environments.

[0014] In one alternative implementation, n-type doped β-(Al) x In y Ga 1-x-y )2O3 film layer, at 10 16 cm -3 At certain electron concentrations, the electron mobility of semiconductor films ranges from 200 to 1200 cm⁻¹. 2 V -1 s -1 n-type doped β-(Al) x In y Ga 1-x-y )2O3 film layer, at 10 17 cm -3 Electron mobility can reach 500 cm⁻¹ at certain concentrations. 2 V -1 s -1 That's all. Compared to the existing... -Ga2O3 semiconductor film, β-(Alx In y Ga 1-x-y )2O3 films can achieve higher electron mobility, thereby helping to improve -Ga2O3 devices improve turn-on and turn-off rates, reduce switching losses, and enhance performance. - The dynamic characteristics of Ga2O3 devices and promote their application in high-frequency and other fields.

[0015] Secondly, this application provides a method for fabricating a semiconductor device, the method comprising: Semiconductor films are formed on the surface of a substrate using epitaxial growth processes; An anode and a cathode are formed on the surface of a semiconductor film.

[0016] The fabrication method of this application utilizes epitaxy to directly form a semiconductor film on the surface of a substrate, which can reduce interface defects such as dislocations between the substrate and the semiconductor film, thereby helping to reduce the impedance of semiconductor devices, reduce losses, and improve electron mobility.

[0017] In one implementation, the fabrication method further includes forming a third electrode between the first electrode and the second electrode and on the surface of the semiconductor film.

[0018] In one implementation, the fabrication method further includes: forming a dielectric layer between the first electrode and the second electrode and on the surface of the semiconductor film layer, and then forming a third electrode on the surface of the dielectric layer.

[0019] Thirdly, this application provides an epitaxial wafer comprising: a substrate and a semiconductor film layer, wherein the substrate includes a first surface and the substrate is a single crystal. -Ga2O3 substrate, with the first surface being a single crystal. -Ga2O3 with (100) or (001) crystal planes. A semiconductor film is disposed on the first surface of the substrate, and the semiconductor film is n-type doped β-(Al) x In y Ga 1-x-y )2O3, x and y satisfy: x>0, y>0, and x+y 0.1875, |xy|=0.03125; the surface of the semiconductor film away from the substrate and β-(Al) x In y Ga 1-x-y The

[010] crystal orientation of )2O3 is parallel.

[0020] The epitaxial layer of this application, β-(Al x In y Ga 1-x-y )2O3 and -Ga₂O₃ lattice mismatch is less than 1%, β-(Al)x In y Ga 1-x-y β-(Al₂O₃) has a band gap value above 4.68 eV, making it a wide band gap semiconductor. Furthermore, β-(Al₂O₃) x In y Ga 1-x-y The electron mobility of 2O3 is 10 17 cm -3 Concentrations can reach 500 cm 2 V -1 s -1 The electron mobility is significantly increased and exhibits anisotropy, with even higher carrier mobility along the

[010] crystal orientation. This application... - Low dislocation density, high electron mobility β-(Al) epitaxial growth on Ga2O3 substrate x In y Ga 1-x-y )2O3 epitaxial layer material, utilizing β-(Al x In y Ga 1-x-y )2O3 and The lattice matching and high electron mobility of Ga2O3 can solve the problem. To address the low electron mobility of Ga2O3 power devices, this application aims to further reduce device losses and improve device performance. High-quality thin films can be grown epitaxially to meet the requirements of high-current, high-power applications. The epitaxial wafers of this application can be used in Schottky diodes, metal-semiconductor field-effect transistors (MOSFETs), and metal-oxide-semiconductor field-effect transistors (MODS) to achieve fast turn-on and turn-off rates, low switching losses, good dynamic characteristics, and applications in high-frequency semiconductor devices. Attached Figure Description

[0021] Figure 1 This is a schematic diagram of the structure of a semiconductor device according to one embodiment; Figure 2 This is a schematic diagram of the structure of a semiconductor device according to another embodiment of this application; Figure 3 This is a schematic diagram of the structure of a semiconductor device according to another embodiment of this application; Figure 4 This is a test pattern of the (010) crystal plane of a semiconductor film. Figure 5 for -(Al x In y Ga 1-x-y Several crystal configurations of 2O3; Figure 6 For different concentrations -(Al x Iny Ga 1-x-y )2O3(x+y The graph shows the variation of lattice parameters and semiconductor bandgap values ​​for 0.1875 (|xy|=0.03125). Figure 7 for -(Al 0.0625 In 0.09375 Ga 0.84375 )2O3 corresponds Figure 5 Electron mobility in different configurations; Figure 8 For different concentrations -(Al x In y Ga 1-x-y )2O3(x+y The average electron mobility of the configuration (0.1875, |xy|=0 or 0.03125); Figure 9 For different concentrations -(Al x In y Ga 1-x-y Forward conduction IV curve of a transverse SBD device with the channel layer of 2O3 transported along the

[010] crystal direction; Figure 10 For the channel layer -(Al 0.03125 In 0.0625 Ga 0.90625 Forward conduction IV curves of transverse SBD devices with 2O3 material transported along different crystal orientations.

[0022] Figure label: 10 - Substrate; 20 - Semiconductor film; 31 - Anode; 32 - Cathode; 41-Source; 42-Drain; 43-Gate; 44-Dielectric layer. Detailed Implementation

[0023] The technical solutions in the embodiments of this application will be clearly and completely described below with reference to the embodiments of this application. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments. Based on the embodiments of this application, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the scope of protection of this application.

[0024] It should be noted that: Unless otherwise specified, all embodiments and preferred methods mentioned herein can be combined to form new technical solutions. Unless otherwise specified, all technical features and preferred features mentioned herein can be combined to form new technical solutions. Unless otherwise specified, percentages (%) or parts refer to molar percentages relative to the composition. Unless otherwise specified, the components or preferred components involved can be combined to form new technical solutions. Unless otherwise specified, the numerical range "a~b" represents an abbreviation of any combination of real numbers between a and b, where a and b are real numbers. For example, the numerical range "6~22" means that all real numbers between "6~22" have been listed herein; "6~22" is merely an abbreviation of these numerical combinations. The "range" disclosed in this application takes the form of a lower limit and an upper limit, and may be one or more lower limits and one or more upper limits, respectively. Unless otherwise specified, the various reaction or operation steps in this application can be performed sequentially or in order. Preferably, the reaction methods described herein are performed sequentially.

[0025] The parallel or perpendicular limitations mentioned in the embodiments of this application are all relative to the current technological level, rather than absolute and strict mathematical definitions. For example, there may be a certain angular deviation (e.g., ±5°, ±10°) between two mutually parallel or perpendicular objects.

[0026] Unless otherwise stated, the technical and scientific terms used herein have the same meanings as those familiar to a person skilled in the art. Furthermore, any methods or materials similar to or equivalent to those described herein may also be used in this application.

[0027] For the existing -Ga2O3 semiconductor devices, due to The semiconductor band gap of Ga2O3 is approximately 4.5~4.9 eV, which corresponds to a BFOM value that is more than 6 times that of GaN. -Ga2O3 is difficult to achieve p-type conductivity, therefore, existing Ga2O3 semiconductor devices are mostly based on electronic conductivity. However, The electron mobility of Ga2O3 is typically below 190 cm⁻¹. 2 V -1 s -1 Therefore, improving electron mobility while maintaining an ultra-wide semiconductor bandgap is a key challenge for further advancements. The BFOM value of Ga2O3 has become an important research direction.

[0028] Based on this, the main objective of the embodiments of this application is to develop a power device structure with low dislocation density, high electron mobility, and wide bandgap semiconductor.

[0029] The semiconductor device provided in this application includes a substrate, a semiconductor film layer, and a first electrode and a second electrode. When the semiconductor device is a Schottky diode, the first electrode is the anode and the second electrode is the cathode. When the semiconductor device is a MESFET, the first electrode is the source and the second electrode is the drain. In addition, the semiconductor device also includes a third electrode, which is the gate. When the semiconductor device is a MOSFET, the first electrode is the source and the second electrode is the drain. In addition, the semiconductor device also includes a third electrode and a dielectric layer, where the third electrode is the gate.

[0030] The following combination Figures 1 to 3 The specific structures of Schottky diodes, MESFETs, and MOSFETs are explained respectively.

[0031] Figure 1 This is a schematic diagram of the structure of a semiconductor device according to one embodiment. The semiconductor device in this embodiment is a Schottky diode. Figure 1 As shown, the semiconductor device includes a substrate 10, a semiconductor film layer 20, an anode 31, and a cathode 32. The substrate 10 includes a first surface and is a single crystal. -Ga2O3 substrate, with the first surface being a single crystal. -Ga2O3 has a (100) or (001) crystal plane. A semiconductor film layer 20 is disposed on the first surface of the substrate 10, and the semiconductor film layer 20 includes an n-type doped β-phase aluminum indium gallium oxide film layer. An anode 31 and a cathode 32 are disposed on the surface of the semiconductor film layer 20 away from the substrate 10, and the anode 31 and the cathode 32 are spaced apart along a first direction; the angle between the first direction and the

[010] crystal orientation of the n-type doped β-phase aluminum indium gallium oxide film layer is less than 10°.

[0032] Both the anode 31 and the cathode 32 are metal electrodes. As an example, the anode 31 may include a nickel layer and a gold layer stacked together. The nickel layer is in contact with the semiconductor film layer 20, and the gold layer is disposed on the surface of the nickel layer. The thickness of the nickel layer can be 20-50 nm. The thickness of the gold layer can be 50-200 nm. As an example, the cathode 32 may include a titanium layer and a gold layer stacked together. The titanium layer is in contact with the semiconductor film layer 20, and the gold layer is disposed on the surface of the titanium layer. The thickness of the titanium layer can be 5-30 nm. The thickness of the gold layer can be 50-200 nm.

[0033] In one embodiment, the anode 31 may include, in addition to a stacked nickel layer and a gold layer, a 2-5 nm thick insulating layer to form a metal-insulator-semiconductor (MIS) anode structure. The insulating layer is disposed between the nickel layer and the semiconductor film.

[0034] like Figure 1 As shown, as an example, the anode 31 and cathode 32 can be elongated electrodes. The extension direction of the elongated electrodes is perpendicular to the first direction.

[0035] β-phase aluminum oxide indium gallium film and single crystal -Ga2O3 substrate 10 has high lattice matching, and can be epitaxially grown to form a single crystal. -Ga2O3 substrate 10 is an epitaxial layer with high lattice matching. During the epitaxial growth process, n-type doping is achieved by introducing n-type doping elements. Through epitaxial growth, the surface of the β-phase aluminum indium gallium film used to connect the anode 31 and the cathode 32 can be the (100) crystal plane or (001) crystal plane of the β-phase aluminum indium gallium film, that is, the

[010] crystal orientation of the β-phase aluminum indium gallium film is parallel to the first surface of the substrate 10.

[0036] In this embodiment of the application, the surface of the semiconductor film layer 20 may be parallel to the first surface, and the first surface is parallel to the

[010] crystal orientation of the n-type doped β-phase aluminum indium gallium oxide film layer.

[0037] Research has revealed that the β-phase aluminum indium gallium oxide film exhibits higher electron mobility along its

[010] crystal orientation. Therefore, by controlling the angle difference between the arrangement direction of the anode 31 and the cathode 32, i.e., the first direction, and its

[010] crystal orientation, within a range of 10°, or for example, within a range of 5°, a higher electron mobility can be achieved in the semiconductor device. For example, the angle between the first direction and the

[010] crystal orientation of the β-phase aluminum indium gallium oxide film can be, for example, 10°, 8°, 6°, 5°, 4°, 3°, 2°, 1°, 0°, or any two of these values. It is understood that the angle between the first direction and the

[010] crystal orientation of the β-phase aluminum indium gallium oxide film is an acute angle between the two directions.

[0038] In one embodiment, the first direction is the same as the

[010] crystal orientation of the n-type doped β-phase indium gallium aluminum oxide film. When the first direction is the same as the

[010] crystal orientation of the n-type doped β-phase indium gallium aluminum oxide film, the electron mobility is higher, at 10 16 cm -3 At electron concentrations, electron mobility can reach 500 cm⁻¹. 2 V -1 s -1The above, and even up to 1000 cm 2 V -1 s -1 above.

[0039] For example, in 10 16 cm -3 At certain electron concentrations, the electron mobility in a semiconductor film can be, for example, 500 cm⁻¹. 2 V -1 s -1 600 cm 2 V -1 s -1 700 cm 2 V -1 s -1 800 cm 2 V -1 s -1 900 cm 2 V -1 s -1 1000 cm 2 V -1 s -1 1100cm 2 V -1 s -1 or 1200 cm 2 V -1 s -1 wait.

[0040] In one embodiment, in the n-type doped β-phase aluminum indium gallium oxide film, the chemical formula of the β-phase aluminum indium gallium oxide is β-(Al... x In y Ga 1-x-y )2O3, x and y satisfy: x>0, y>0, and x+y 0.1875, |xy|=0 or 0.03125. For example, the value of x can be 0.03125, 0.0625, or 0.09375. The value of y can be 0.03125, 0.0625, or 0.09375. Wherein, in β-(Al x In y Ga 1-x-y In 2O3, the contents of Al and In affect β-(Al₂O₃) x In y Ga 1-x-y The lattice parameters, band gap width, and electron mobility of β-(Al₂O₃) are all affected differently. Specifically, for the lattice parameters, β-(Al₂O₃) x In y Ga 1-x-yThe lattice parameters of β-(Al₂O₃) decrease with increasing Al content and increase with increasing In content. Regarding the band gap, β-(Al₂O₃) x In y Ga 1-x-y The band gap of β-(Al₂O₃) increases with increasing Al content and decreases with increasing In content. Regarding electron mobility, β-(Al₂O₃) x In y Ga 1-x-y With increasing In content in the solid solution, the electron mobility of β-(Al₂O₃)₃ increases significantly, while for the same In content, increasing Al content decreases the electron mobility. Therefore, by controlling β-(Al₂O₃)₃… x In y Ga 1-x-y The content of Al and In in 2O3 can reduce lattice distortion and make β-(Al) x In y Ga 1-x-y The lattice size of 2O3 and - The lattice size of the Ga2O3 substrate 10 is matched, and at the same time, β-(Al) can be made more suitable for the crystal structure. x In y Ga 1-x-y )2O3 maintains a high band gap width and electron mobility.

[0041] Tests showed that when x > 0, y > 0, and x + y When |xy|=0 or 0.03125, β-(Al x In y Ga 1-x-y )2O3 and The Ga2O3 substrate has a higher lattice matching degree, allowing for direct epitaxial growth. - A specific β-(Al) phase is grown on the (100) or (001) crystal plane of a Ga2O3 substrate 10. x In y Ga 1-x-y )2O3 film layer, thereby making β-(Al x In y Ga 1-x-y )2O3 film and The lattice mismatch of the Ga2O3 substrate is reduced to less than 1%, decreasing the dislocation density at the interface between the two substrates, thereby further reducing semiconductor device losses and improving semiconductor device performance. High-quality n-type doped β-(Al2O3)3 substrates are grown epitaxially. x In y Ga 1-x-y )2O3 film layer can meet the requirements of high current and high power applications of semiconductor devices.

[0042] In one embodiment, the first direction is the same as the

[010] crystal orientation of the n-type doped β-phase indium gallium aluminum oxide film. When the first direction is the same as the

[010] crystal orientation of the n-type doped β-phase indium gallium aluminum oxide film, the electron mobility is higher, at 10 16 cm -3 At electron concentrations, electron mobility can reach 500 cm⁻¹. 2 V -1 s -1 The above, and even up to 1000 cm 2 V -1 s -1 above.

[0043] In one embodiment, β-(Al x In y Ga 1-x-y The band gap of β-(Al₂O₃) is greater than 4.68 eV, for example, it can be 4.68 eV to 4.90 eV. For example, β-(Al₂O₃) x In y Ga 1-x-y The bandgap width of 2O3 can be, for example, 4.68 eV, 4.70 eV, 4.72 eV, 4.74 eV, 4.76 eV, 4.78 eV, 4.80 eV, 4.90 eV, or any two of these values. A high bandgap width allows semiconductor devices to operate at higher voltages and higher power.

[0044] In one embodiment, n-type doped β-(Al) x In y Ga 1-x-y )2O3 film layer, at 10 16 cm -3 At the given electron concentration, the electron mobility of semiconductor film 20 is 200–1200 cm⁻¹. 2 V -1 s -1 n-type doped β-(Al) x In y Ga 1-x-y )2O3 film layer, at 10 17 cm -3 Electron mobility can reach 500 cm⁻¹ at certain concentrations. 2 V -1 s -1 That's all. Compared to the existing... -Ga2O3 semiconductor film 20, β-(Al x In y Ga 1-x-y )2O3 films can achieve higher electron mobility, thereby helping to improve -Ga2O3 devices improve turn-on and turn-off rates, reduce switching losses, and enhance performance. - The dynamic characteristics of Ga2O3 devices and promote their application in high-frequency and other fields.

[0045] The method for fabricating a semiconductor device according to embodiments of this application may include the following steps: forming a semiconductor film layer 20 on the surface of a substrate 10 using an epitaxial growth process; and forming an anode 31 and a cathode 32 on the surface of the semiconductor film layer 20. Directly forming the semiconductor film layer 20 on the surface of the substrate 10 using an epitaxial method can reduce interface defects, such as dislocations, between the substrate 10 and the semiconductor film layer 20, thereby helping to reduce the impedance of the semiconductor device, reduce losses, and improve electron mobility.

[0046] In one specific embodiment, Figure 1 The method for fabricating the semiconductor device shown may include the following steps: S11, substrate 10 preparation Select semi-insulating single crystal -Ga2O3 substrate 10, with two opposing surfaces along its thickness direction being (100) or (001) crystal planes. For single crystals -Ga2O3 substrate 10 undergoes standard cleaning: single crystals are then cleaned at room temperature. The Ga2O3 substrate 10 is cleaned in acetone or N-methylpyrrolidone (NMP) organic solution for 15-20 minutes, then cleaned in isopropanol for 15 minutes, followed by cleaning with deionized water for 2 minutes, and then dried with high-purity nitrogen.

[0047] S12, epitaxial growth

[0048] The cleaned single crystal A Ga2O3 substrate 10 was placed in a metal-organic chemical vapor deposition (MOCVD) reaction chamber, and growth was performed using trimethylgallium™Ga, trimethylaluminum™Al, and trimethylindium™In as Ga, Al, and In sources, respectively, and high-purity O2 as the O source. -(Al x In y Ga 1-x-y )2O3 thin film. The reaction chamber temperature was set to 800. C. During the growth process, the grown film is n-type doped using silane SiH4 or tetramethyltin TMSn as the n-type dopant source.

[0049] S13, cathode 32 preparation

[0050] The epitaxial wafer obtained after epitaxial growth is placed in a magnetron sputtering machine to fabricate ohmic contact electrodes. Photoresist is applied, photolithography is performed, and etching is used to create the mask pattern area required for the ohmic contact electrode. Metal is then sputtered, and the metal layer outside the ohmic electrode area is etched away. Alternatively, photoresist is first applied, photolithography is performed, and etching is used to create the mask pattern area required for the ohmic contact electrode, and then an electron beam evaporation machine is used to fabricate the ohmic contact cathode 32. The ohmic contact electrode is a Ti / Au stack, where the thickness of Ti is 5-30 nm and the thickness of Au is 50-200 nm.

[0051] S14, Anode 31 Preparation

[0052] The mask pattern area required for the Schottky contact anode 31 is prepared by applying photoresist, photolithography, and etching. The anode 31 metal is then fabricated and lifted off using an electron beam plating machine. The anode 31 metal is Ni / Au, with a Ni thickness of 20-50 nm and an Au thickness of 50-200 nm. The cathode 32 and anode 31 are located along... -(Al x In y Ga 1-x-y The

[010] crystal orientation of )2O3 is spaced apart.

[0053] Based on the same technical objective, this application also provides another semiconductor device. Figure 2 This is a schematic diagram of the structure of a semiconductor device according to another embodiment of this application. The semiconductor device is a metal-semiconductor field-effect transistor (MESFET). Figure 2 As shown, the semiconductor includes a substrate 10, a semiconductor film layer 20, a source 41, a drain 42, and a gate 43. The substrate 10 includes a first surface and is a single crystal. -Ga2O3 substrate 10, the first surface is single crystal -Ga2O3 has a (100) crystal plane or a (001) crystal plane; a semiconductor film layer 20 is disposed on the first surface of the substrate 10, and the semiconductor film layer 20 includes an n-type doped β-phase aluminum indium gallium oxide film layer. A source 41, a drain 42, and a gate 43 are disposed on the surface of the semiconductor film layer 20 away from the substrate 10, and the gate 43 is disposed between the source 41 and the drain 42. The source 41, the gate 43, and the drain 42 are arranged sequentially and spaced apart along a first direction; the angle between the first direction and the

[010] crystal orientation of the n-type doped β-phase aluminum indium gallium oxide film layer is less than 10°.

[0054] In this design, the source 41, drain 42, and gate 43 are all metal electrodes. As an example, the source 41 may include a stacked titanium layer and a gold layer. The titanium layer is in contact with the semiconductor film layer 20, and the gold layer is disposed on the surface of the titanium layer. The thickness of the titanium layer can be 5-30 nm. The thickness of the gold layer can be 50-200 nm. Similarly, the drain 42 may include a stacked titanium layer and a gold layer. The titanium layer is in contact with the semiconductor film layer 20, and the gold layer is disposed on the surface of the titanium layer. The thickness of the titanium layer can be 5-30 nm. The thickness of the gold layer can be 50-200 nm. The gate 43 includes a stacked nickel layer and a gold layer, where the thickness of the nickel layer can be 20-50 nm, and the thickness of the gold layer is 50-200 nm.

[0055] like Figure 2 As shown, as an example, the source 41, drain 42, and gate 43 can be elongated electrodes. The extension direction of the elongated electrodes is perpendicular to the first direction.

[0056] β-phase aluminum oxide indium gallium film and single crystal -Ga2O3 substrate 10 has high lattice matching, and can be epitaxially grown to form a single crystal. -Ga2O3 substrate 10 is an epitaxial layer with high lattice matching. During the epitaxial growth process, n-type doping is achieved by introducing n-type doping elements. Through epitaxial growth, the surface of the β-phase aluminum indium gallium film used to connect the source 41 and the drain 42 can be the (100) crystal plane or (001) crystal plane of the β-phase aluminum indium gallium film, that is, the

[010] crystal orientation of the β-phase aluminum indium gallium film is parallel to the first surface of the substrate 10.

[0057] In this application embodiment, the angle between the first direction and the

[010] crystal orientation of the β-phase aluminum indium gallium film, and the specific composition of the β-phase aluminum indium gallium film are... Figure 1 The same applies to the Schottky diodes mentioned above, and will not be repeated here.

[0058] The method for fabricating a semiconductor device according to embodiments of this application may include the following steps: forming a semiconductor film layer 20 on the surface of a substrate 10 using an epitaxial growth process; and forming a source electrode 41, a drain electrode 42, and a gate electrode 43 on the surface of the semiconductor film layer 20. Directly forming the semiconductor film layer 20 on the surface of the substrate 10 using an epitaxial method can reduce interface defects, such as dislocations, between the substrate 10 and the semiconductor film layer 20, thereby helping to reduce the impedance of the semiconductor device, reduce losses, and improve electron mobility.

[0059] In one specific embodiment, Figure 2 The method for fabricating the semiconductor device shown may include the following steps: S21, substrate 10 preparation Select semi-insulating single crystal -Ga2O3 substrate 10, with two opposing surfaces along its thickness direction being (100) or (001) crystal planes. For single crystals -Ga2O3 substrate 10 undergoes standard cleaning: single crystals are then cleaned at room temperature. The Ga2O3 substrate 10 is cleaned in acetone or NMP organic solution for 15-20 minutes, then in isopropanol for 15 minutes, followed by cleaning with deionized water for 2 minutes, and then dried with high-purity nitrogen.

[0060] S22, epitaxial growth

[0061] The cleaned single crystal A Ga2O3 substrate 10 was placed in a metal-organic chemical vapor deposition (MOCVD) reaction chamber, and growth was performed using trimethylgallium™Ga, trimethylaluminum™Al, and trimethylindium™In as Ga, Al, and In sources, respectively, and high-purity O2 as the O source. -(Al x In y Ga 1-x-y )2O3 thin film. The reaction chamber temperature was set to 800. C. During the growth process, the grown film is n-type doped using silane SiH4 or tetramethyltin TMSn as the n-type dopant source.

[0062] S23, source 41 and drain 42 fabrication

[0063] The epitaxial wafer obtained after epitaxial growth is placed in a magnetron sputtering machine to fabricate the source and drain electrodes. Photoresist is applied, photolithography is performed, and etching is used to prepare the mask pattern required for the ohmic contact electrode. Metal is then sputtered, and the metal layer outside the ohmic electrode region is etched away. Alternatively, photoresist is first applied, photolithography is performed, and etching is used to prepare the mask pattern required for the ohmic contact electrode, and then an electron beam evaporation machine is used to fabricate the ohmic contact electrode to form source 41. Source 41 is a Ti / Au stack, where the thickness of Ti is 5-30 nm and the thickness of Au is 50-200 nm.

[0064] S25, gate 43 fabrication

[0065] The mask pattern area required for gate 43 is prepared by applying photoresist, photolithography, and etching, and then placed in an electron beam plating machine to prepare the gate 43 metal. The gate 43 metal is Ni / Au, where the thickness of Ni metal is 20-50 nanometers and the thickness of Au metal is 50-200 nanometers.

[0066] Among them, source 41, gate 43 and drain 42 are along -(Al x In y Ga1-x-y The

[010] crystal orientations of )2O3 are arranged alternately.

[0067] Based on the same technical objective, this application also provides another semiconductor device. Figure 3 This is a schematic diagram of a semiconductor device according to another embodiment of this application. The semiconductor device is a metal-oxide-semiconductor field-effect transistor (MOSFET). Figure 3 As shown, the semiconductor includes a substrate 10, a semiconductor film layer 20, a source 41, a drain 42, and a gate 43. The substrate 10 includes a first surface and is a single crystal. -Ga2O3 substrate 10, the first surface is single crystal -Ga2O3 has a (100) crystal plane or a (001) crystal plane. A semiconductor film layer 20 is disposed on the first surface of the substrate 10, and the semiconductor film layer 20 is an n-type doped β-phase aluminum indium gallium oxide film layer. A source electrode 41, a drain electrode 42, and a gate electrode 43 are disposed on the surface of the semiconductor film layer 20 away from the substrate 10. A dielectric layer 44 is disposed on the surface of the semiconductor film layer 20 between the source electrode 41 and the drain electrode 42, and the gate electrode 43 is disposed on the surface of the dielectric layer 44. The source electrode 41, the gate electrode 43, and the drain electrode 42 are arranged sequentially and spaced apart along a first direction, and the angle between the first direction and the

[010] crystal orientation of the n-type doped β-phase aluminum indium gallium oxide film layer is less than 10°.

[0068] In this design, the source 41, drain 42, and gate 43 are all metal electrodes. As an example, the source 41 may include a stacked titanium layer and a gold layer. The titanium layer is in contact with the semiconductor film layer 20, and the gold layer is disposed on the surface of the nickel layer. The thickness of the titanium layer can be 5-30 nm. The thickness of the gold layer can be 50-200 nm. Similarly, the drain 42 may include a stacked titanium layer and a gold layer. The titanium layer is in contact with the semiconductor film layer 20, and the gold layer is disposed on the surface of the titanium layer. The thickness of the titanium layer can be 5-30 nm. The thickness of the gold layer can be 50-200 nm. The dielectric layer 44 may be an oxide layer, such as an aluminum oxide (Al2O3) layer. The thickness of the dielectric layer 44 can be 10-25 nm. The gate 43 may be a stacked nickel layer and a gold layer (or a titanium layer and a gold layer), with the nickel layer having a thickness of 20-50 nm and the gold layer having a thickness of 50-200 nm.

[0069] like Figure 3 As illustrated, as an example, the source 41, drain 42, and gate 43 can be elongated electrodes. The extension direction of the elongated electrodes is perpendicular to the first direction. Specifically, the angle between the first direction and the

[010] crystal orientation of the β-phase aluminum indium gallium oxide film in this embodiment, and the specific composition of the β-phase aluminum indium gallium oxide film... Figure 1The same applies to the Schottky diodes mentioned above, and will not be repeated here.

[0070] The method for fabricating a semiconductor device according to embodiments of this application may include the following steps: forming a semiconductor film layer 20 on the surface of a substrate 10 using an epitaxial growth process; forming a source electrode 41 and a drain electrode 42 on a portion of the surface of the semiconductor film layer 20; forming a dielectric layer 44 between the source electrode 41 and the drain electrode 42; and forming a gate electrode 43 on the surface of the dielectric layer 44. Directly forming the semiconductor film layer 20 on the surface of the substrate 10 using an epitaxial method can reduce interface defects, such as dislocations, between the substrate 10 and the semiconductor film layer 20, thereby helping to reduce the impedance of the semiconductor device, reduce losses, and improve electron mobility.

[0071] In one specific embodiment, Figure 3 The method for fabricating the semiconductor device shown may include the following steps: S21, substrate 10 preparation Select semi-insulating single crystal -Ga2O3 substrate 10, with two opposing surfaces along its thickness direction being (100) or (001) crystal planes. For single crystals -Ga2O3 substrate 10 undergoes standard cleaning: single crystals are then cleaned at room temperature. The Ga2O3 substrate 10 is cleaned in acetone or NMP organic solution for 15-20 minutes, then in isopropanol for 15 minutes, followed by cleaning with deionized water for 2 minutes, and then dried with high-purity nitrogen.

[0072] S22, epitaxial growth

[0073] The cleaned single crystal A Ga2O3 substrate 10 was placed in a metal-organic chemical vapor deposition (MOCVD) reaction chamber, and growth was performed using trimethylgallium™Ga, trimethylaluminum™Al, and trimethylindium™In as Ga, Al, and In sources, respectively, and high-purity O2 as the O source. -(Al x In y Ga 1-x-y )2O3 thin film. The reaction chamber temperature was set to 800. C. During the growth process, the grown film is n-type doped using silane SiH4 or tetramethyltin TMSn as the n-type dopant source.

[0074] S23, source 41 and drain 42 fabrication

[0075] The epitaxial wafer obtained after epitaxial growth is placed in a magnetron sputtering machine to fabricate ohmic contact source and drain electrodes. Photoresist is applied, photolithography is performed, and etching is used to create the mask pattern areas required for the source and drain electrodes. Metal is then sputtered, and the metal layer outside the source and drain electrode areas is etched away. Alternatively, an electron beam evaporation machine is used to fabricate the ohmic contact electrodes to form source 41 and drain 42. Source 41 and drain 42 are Ti / Au stacks, where the thickness of Ti is 5-30 nm and the thickness of Au is 50-200 nm.

[0076] S25, Dielectric Layer 44 Preparation

[0077] A dielectric layer 44, such as an Al2O3 layer, is prepared using atomic layer deposition (ALD). The thickness of the dielectric layer 44 can be 10–25 nm.

[0078] S26, gate 43 fabrication

[0079] The mask pattern required for gate 43 is prepared by applying photoresist, photolithography, and etching, and then placed in an electron beam plating machine to fabricate the gate 43 metal. The gate 43 metal is made of Ni / Au, where the thickness of Ni metal is 20-50 nanometers and the thickness of Au metal is 50-200 nanometers.

[0080] Among them, source 41, gate 43 and drain 42 are along -(Al x In y Ga 1-x-y The

[010] crystal orientations of )2O3 are arranged alternately.

[0081] Refer to together Figures 1 to 3 The semiconductor device proposed in this application embodiment is manufactured using a single crystal. Epitaxial growth on Ga2O3 substrate 10 -(Al x In y Ga 1-x-y A wide-bandgap, high-electron-mobility semiconductor film 20 of 2O3 is used to fabricate lateral-structured Schottky diodes (SBDs), metal-semiconductor field-effect transistors (MESFETs), and metal-oxide-semiconductor field-effect transistors (MOSFETs) power devices. -(Al x In y Ga 1-x-y )2O3 and -Ga2O3 lattice matching, can be used with High-quality thin films are epitaxially grown on Ga2O3 single-crystal substrate 10. In the embodiments of this application, -(Al x In y Ga 1-x-y)₂O₃ exhibits significantly improved electron mobility, especially along the

[010] crystal orientation. On the (100) or (001) crystal planes... -Surface epitaxy of Ga2O3 substrate 10 -(Al x In y Ga 1-x-y )2O3 thin film, along -(Al x In y Ga 1-x-y The

[010] crystal orientation of 2O3 is used to deposit the anode 31 and cathode 32 of the SBD, or the source 41, drain 42 and gate 43 of the field effect transistor, so as to improve the response characteristics of the semiconductor device by using the

[010] crystal orientation with high electron mobility as the current transport direction.

[0082] For the same purpose, embodiments of this application also provide an epitaxial wafer. The epitaxial wafer includes a substrate 10 and a semiconductor film layer 20. The substrate 10 includes a first surface and is a single crystal. -Ga2O3 substrate 10, the first surface is single crystal -Ga2O3 with (100) or (001) crystal planes. A semiconductor film 20 is disposed on the first surface of the substrate 10, and the semiconductor film 20 is n-type doped β-(Al2O3)2O3. x In y Ga 1-x-y )2O3, x and y satisfy: x>0, y>0, and x+y 0.1875, |xy|=0.03125; the surface of the semiconductor film 20 away from the substrate 10 is adjacent to β-(Al x In y Ga 1-x-y The

[010] crystal orientation of )2O3 is parallel.

[0083] The epitaxial wafer in this embodiment of the application, β-(Al x In y Ga 1-x-y )2O3 and -Ga₂O₃ lattice mismatch is less than 1%, β-(Al) x In y Ga 1-x-y β-(Al₂O₃) has a band gap value above 4.68 eV, making it a wide band gap semiconductor. Furthermore, β-(Al₂O₃) x In y Ga 1-x-y The electron mobility of 2O3 is 10 17 cm -3 Concentrations can reach 500 cm 2 V -1 s-1 The electron mobility is significantly increased and exhibits anisotropy, with even higher carrier mobility along the

[010] crystal orientation. This application... - Low dislocation density, high electron mobility β-(Al2O3) epitaxial layer on Ga2O3 substrate 10 x In y Ga 1-x-y )2O3 epitaxial layer material, utilizing β-(Al x In y Ga 1-x-y )2O3 and The lattice matching and high electron mobility of Ga2O3 can solve the problem. To address the low electron mobility of Ga2O3 power devices, this application aims to further reduce device losses and improve device performance. High-quality thin films can be grown epitaxially to meet the requirements of high-current, high-power applications. The epitaxial wafers of this application can be used in Schottky diodes, metal-semiconductor field-effect transistors (MOSFETs), and metal-oxide-semiconductor field-effect transistors (MODS) to achieve fast turn-on and turn-off rates, low switching losses, good dynamic characteristics, and applications in high-frequency semiconductor devices.

[0084] Furthermore, the epitaxial wafers of this application embodiment can also be combined with Al2O3 films to fabricate high electron mobility transistor (HEMT) devices. Based on the structural design, they can be applied to fields such as radio frequency and solar-blind detection.

[0085] The performance of the semiconductor devices in the embodiments of this application will be further explained and described below with reference to specific examples.

[0086] Combination Figure 1 Taking a Schottky diode as an example, in this embodiment of the semiconductor device, the semiconductor film 20 is an n-type doped β-(Al)-2000 nm semiconductor film. x In y Ga 1-x-y )2O3 film. The first direction is n-type doped β-(Al) x In y Ga 1-x-y The

[010] crystal orientation of the 2O3 film. During the operation of the semiconductor device, the direction of current transmission is also the first direction.

[0087] Figure 4 This is a test pattern of the (010) crystal plane of semiconductor film layer 20. (See image below.) Figure 4 As shown in (a), the (010) section perpendicular to the first direction was tested, and the test results are as follows. Figure 4 As shown in (b) and (c) above. XRD tests were performed on the above cross-sections, and the test results are as follows. Figure 4As shown in (b) above, integrated differential phase contrast (iDPC) image testing was performed on the aforementioned cross section. The test structure is as follows. Figure 4 As shown in (c) in the figure.

[0088] like Figure 4 As shown, XRD characterization of the (010) crystal plane (Cu Ka wavelength 1.54059 Å) revealed that at a diffraction angle of 2... It is 60.9 Near the vicinity, diffraction peaks appear on the (002) crystal plane. Furthermore, using integrated differential phase contrast (iDPC) imaging of the (010) crystal plane with scanning transmission electron microscopy, the atomic arrangement of the (010) plane can be clearly observed, revealing octagonal and quadrilateral distributions composed of Ga and O atoms. β-(Al x In y Ga 1-x-y In Al₂O₃, Al and In are located at the brighter Ga atomic sites in the diagram. The above tests indicate that the cross-section perpendicular to the first direction represents n-type doped β-(Al₂O₃)₂. x In y Ga 1-x-y The (010) crystal plane of the 2O3 film, that is, the first direction is with the n-type doped β-(Al) x In y Ga 1-x-y The

[010] crystal orientation of the 2O3 film is consistent. The β-(Al) film is perpendicular to the n-type doped structure. x In y Ga 1-x-y The cross-section of the

[010] crystal orientation of the 2O3 film corresponds to the n-type doped β-(Al) x In y Ga 1-x-y (010) crystal plane of )2O3 film.

[0089] The following will focus on β-(Al x In y Ga 1-x-y The anisotropy of 2O3 will be explained in further detail.

[0090] Figure 5 for -(Al x In y Ga 1-x-y Several crystal configurations of 2O3 are shown below. Figure 5 As shown, for -(Al x In y Ga 1-x-y)2O3, and five lowest energy configurations under different distributions are given. Figure 5 The structures shown are all atomic arrangement diagrams of the unit cell viewed from the ac plane. For configurations of specific concentrations, such as... Figure 5 In the configuration shown, Al and In are -(Al x In y Ga 1-x-y The distribution of )2O3 is different, that is, in -(Al x In y Ga 1-x-y The positions they occupy in 2O3 are different.

[0091] Figure 6 For different concentrations -(Al x In y Ga 1-x-y )2O3(x+y The graph shows the variation of lattice parameters (0.1875, |xy|=0.03125) with semiconductor bandgap values. Among them, Figure 6 In the figure, (a)-(c) represent different solid solution concentrations. -(Al x In y Ga 1-x-y )2O3(x+y 0.1875, |xy|=0 or 0.03125). -(Al x Ga 1-x )2O3 and -(In x Ga 1-x The lattice parameter variations of )2O3 along the principal axes a, b and c. Figure 6 In the figure, (d) represents the relationship between the band gap of the semiconductor with the above configuration and the concentration.

[0092] The following will combine Figure 5 and Figure 6 ,right -(Al x In y Ga 1-x-y )2O3(x+y The cell structure, semiconductor band gap, and electron mobility of the configuration (0.1875, |xy|=0.03125) were studied.

[0093] like Figure 6 As shown, for ease of comparison, the corresponding -(Al x Ga 1-x )2O3 and -(In x Ga 1-x )2O3 is also shown in the figure. For example Figure 6 As shown in (a)-(c), -(Al x Ga 1-x The lattice parameters on each principal axis of 2O3 decrease with increasing Al content, corresponding to... -(In x Ga 1-x The lattice parameter of Al₂O₃ increases with increasing In content. The change in lattice parameter is positively correlated with the relative atomic radii of Al and In relative to Ga. -(Al x In y Ga 1-x-y When |xy| = 0.03125 for 2O3, due to the simultaneous inclusion of In (with a larger atomic radius) and Al (with a smaller atomic radius), the lattice parameter shows a slight increase, and the increase is relatively small. -(In x Ga 1-x )2O3 is significantly smaller. For Figure 5 The five structures shown -(Al x In y Ga 1-x-y )2O3, x+y For configurations with 0.1875 and |xy|=0 or 0.03125, the increase in lattice parameter along the a-axis is less than 0.726%, while the corresponding increases along the b-axis and c-axis are 1.09% and 0.685%, respectively. The change in lattice parameter along the ac-plane is even smaller. Based on the above tests, it can be seen that the embodiments of this application... -(Al x In y Ga 1-x-y )2O3, x+y 0.1875, |xy|=0 or 0.03125, its lattice parameters are similar to - Cell parameters similar to those of the Ga2O3 phase.

[0094] Reference Figure 6 As shown in (d) above, for semiconductor band gaps, -(Al x Ga 1-x The band gap of 2O3 increases with increasing Al content, while -(In x Ga 1-x The band gap of 2O3 decreases with increasing In content. -(Al x Iny Ga 1-x-y )2O3, x+y When |xy| = 0.03125, the semiconductor bandgap is similar to... The values ​​for -Ga2O3 are closer, and the smallest composition listed above is... -(Al x In y Ga 1-x-y In 2O3, the semiconductor bandgap value is also above 4.68 eV, so it is still a wide bandgap semiconductor.

[0095] In conclusion, -(Al x In y Ga 1-x-y )2O3, x+y 0.1875, |xy|=0 or 0.03125, and The lattice parameters of Ga2O3 are close, especially the ac plane, making it suitable for use on the (100) or (001) crystal planes. -High-quality epitaxial growth on Ga2O3 substrate 10 surface -(Al x In y Ga 1-x-y Thin films of 2O3. This system remains a wide-bandgap semiconductor, suitable for high-power device applications.

[0096] based on Figure 5 The embodiments of this application further investigated all of the several stable crystal configurations shown. -(Al x In y Ga 1-x-y )2O3(x+y Electron mobility of the structure (0.1875, |xy|=0 or 0.03125).

[0097] Figure 7 for -(Al 0.0625 In 0.09375 Ga 0.84375 )2O3 corresponds Figure 5 Electron mobility with different distribution configurations is shown. Among them, the cyan hexagon, blue square and green star represent the electron mobility on the a, b and c principal axes, respectively, and the black circle represents the average value in the three directions.

[0098] like Figure 7 As shown, -(Al 0.0625 In 0.09375 Ga 0.84375 The electron mobility of 2O3 is relatively high. -Ga2O3 shows a significant improvement, especially for the S1 configuration (In distributed along the b-axis). At 10 16 cm -3 At electron concentration, -(Al 0.0625 In 0.09375 Ga 0.84375 In 2O3, the electron mobility along the b-axis of the S1 configuration is close to 1200 cm⁻¹. 2 V -1 s -1 , near This is ten times the value of Ga2O3. The corresponding values ​​along the a-axis and c-axis also reach 600 cm⁻¹. 2 V -1 s -1 In the above, electron mobility is significantly increased in other distribution configurations, and the value of the b-axis is significantly higher than that of the a and c axes.

[0099] Figure 8 For different concentrations -(Al x In y Ga 1-x-y )2O3(x+y The average electron mobility of the configuration (0.1875, |xy|=0 or 0.03125). For example... Figure 8 As shown, electron mobility increases significantly with increasing In content in the solid solution. However, for the same In content, increasing Al content decreases electron mobility. At 10... 16 cm -3 At electron concentration, -Ga2O3、 -(Al 0.03125 In 0.0625 Ga 0.90625 )2O3、 -(Al 0.0625 In 0.0625 Ga 0.875 )2O3、 -(Al 0.0625 In 0.09375 Ga 0.84375 )2O3 and -(Al 0.09375 In 0.09375 Ga 0.8125 The electron mobility of 2O3 is 126 cm⁻¹. 2 V -1 s -1 280 cm 2 V -1 s -1 244cm2 V -1 s -1 500 cm 2 V -1 s -1 and 383 cm 2 V -1 s -1 .in -(Al 0.0625 In 0.09375 Ga 0.84375 The average value of )2O3 reached It is approximately four times that of Ga2O3. Based on the above results, we adopt... -(Al x In y Ga 1-x-y )2O3(x+y Using 0.1875, |xy|=0 or 0.03125 as a novel wide-bandgap semiconductor material to fabricate power devices can significantly improve device performance.

[0100] Combination -(Al x In y Ga 1-x-y The lattice parameters of 2O3 and The differences in Ga2O3 and the anisotropy of its electron mobility indicate that the (100) and (001) crystal planes... Epitaxial growth on Ga2O3 substrate 10 -(Al x In y Ga 1-x-y )2O3(x+y 0.1875, |xy|=0 or 0.03125), and deposit electrodes along the

[010] crystal orientation to allow electrons to transport along this direction, resulting in devices with superior performance.

[0101] Based on different concentrations -(Al x In y Ga 1-x-y )2O3 materials and different crystal orientations -(Al 0.03125 In 0.625 Ga 0.90625 Semiconductor film 20 was prepared using 2O3 material and formed as shown in the figure. Figure 1 The SBD device with the structure shown was simulated, and its forward conduction characteristics were compared. The results showed that the semiconductor film 20 had different solid solution concentrations of n-type doped layers. -(Al x In y Ga1-x-y )2O3 current-voltage curve and in -(Al 0.03125 In 0.625 Ga 0.90625 Current-voltage curves of transport in different crystal orientations on 2O3. Figure 9 For different concentrations -(Al x In y Ga 1-x-y Forward conduction IV curve of a lateral SBD device with 2O3 transported along the

[010] crystal direction. Figure 9 As shown, the green triangles and dark gray squares represent semiconductor film layers 20. -(Al 0.0625 In 0.09375 Ga 0.84375 )2O3 and -Ga2O3 material. (Refer to...) Figure 9 This is due to a significant increase in electron mobility (in terms of 10). 18 cm -3 Average electron concentration and electron mobility: 415 cm⁻¹ 2 V -1 s -1 (Calculations show that) the current density of a semiconductor device increases significantly after forward conduction. For example, when the forward bias is 2.0 V, the current density of the semiconductor film layer 20 is... -(Al 0.0625 In 0.09375 Ga 0.84374 The current density of 2O3 reaches 3114 A / cm. 2 Approximately 20 layers of semiconductor film. -The structure of Ga2O3 devices is four times larger. Figure 10 The alignment directions of the cathode and anode are given along

[100] ,

[010] , and at a 45° angle to the

[010] crystal orientation in the bc plane. IV curves for transport along the included crystal orientation. It was found that transport along the

[010] crystal orientation exhibits a larger current density; at a forward conduction voltage of 2V, the current densities along the

[010] and

[100] crystal orientations are 1863 and 1298 A / cm², respectively. 2 .

[0102] The performance of the semiconductor devices in the embodiments of this application will be explained below with reference to specific test examples and comparative examples.

[0103] Examples 1-4

[0104] Examples 1-4 are semiconductor devices. Their structures are as follows: Figure 1 As shown. Substrate 10 is a single crystal with a (100) crystal plane. -Ga2O3 substrate 10. Semiconductor films 20 are all n-type doped. -(Al x In y Ga 1-x-y )2O3 film layer. The specific composition of the semiconductor film layer 20 is listed in Table 1. In this embodiment, the anode 31 and cathode 32 are arranged in the

[010] crystal orientation.

[0105] Comparative Example 1

[0106] The difference between Comparative Example 1 and Examples 1-4 lies in the semiconductor film 20. In Comparative Example 1, the semiconductor film 20 is n-type doped. -Ga2O3 film.

[0107] Comparative Example 2

[0108] The difference from Examples 1-4 lies in the substrate 10. In this comparative example, substrate 10 is a single crystal with a (010) crystal plane. -Ga2O3 substrate 10. In Comparative Example 2, the semiconductor film 20 is n-type doped. -(Al x In y Ga 1-x-y )2O3 film layer. The specific composition of the semiconductor film layer 20 is listed in Table 1. In this comparative example, the anode 31 and cathode 32 are arranged in the

[100] crystal orientation.

[0109] Comparative Example 3

[0110] The difference from Examples 1-4 lies in the substrate 10. In this comparative example, substrate 10 is a single crystal with a (100) crystal plane. -Ga2O3 substrate 10. In Comparative Example 2, the semiconductor film 20 is n-type doped. -(Al x In y Ga 1-x-y )2O3 film layer. The specific composition of the semiconductor film layer 20 is listed in Table 1. In this comparative example, the anode 31 and cathode 32 are arranged in the same direction as... -(Al x In y Ga 1-x-y The angle between the

[010] crystal orientations of )2O3 is 45°.

[0111] In the examples 1-4 and 1-3 above, the doping elements and doping concentrations of the n-type doped ions in the semiconductor film layer 20 are the same.

[0112] The current density of the semiconductor devices in each embodiment and comparative example was tested, and the test results are listed in Table 1.

[0113] Table 1

[0114] As shown in Table 1, the semiconductor devices of Examples 1-4 of this application have higher current densities than the semiconductor devices of Comparative Examples 1-3. Specifically, a comparison of the data from Example 1 and Comparative Example 3 shows that changing the arrangement of the cathode and anode, i.e., changing the direction of current transmission, will reduce the current density of the semiconductor device.

[0115] Obviously, those skilled in the art can make various modifications and variations to the embodiments of this application without departing from the spirit and scope of this application. Therefore, if these modifications and variations of this application fall within the scope of the claims of this application and their equivalents, this application also intends to include these modifications and variations.

Claims

1. A semiconductor device, characterized in that, include: A substrate, including a first surface, wherein the substrate is a single crystal. -Ga2O3 substrate, the first surface is single crystal -Ga2O3's (100) or (001) crystal planes; A semiconductor film layer is disposed on a first surface of the substrate, the semiconductor film layer comprising an n-type doped β-phase aluminum indium gallium film layer; The first electrode and the second electrode are disposed on the surface of the semiconductor film layer away from the substrate, and the first electrode and the second electrode are spaced apart along a first direction; the angle between the first direction and the [010] crystal orientation of the n-type doped β-phase aluminum indium gallium film layer is less than 10°.

2. The semiconductor device according to claim 1, characterized in that, The first electrode is the anode, and the second electrode is the cathode.

3. The semiconductor device according to claim 1, characterized in that, The semiconductor device further includes a third electrode, which is disposed on the surface of the semiconductor film layer between the first electrode and the second electrode; The third electrode is arranged along the first electrode and the second electrode in the first direction, wherein the first electrode is the source, the second electrode is the drain, and the third electrode is the gate.

4. The semiconductor device according to claim 1, characterized in that, The semiconductor device further includes a third electrode and a dielectric layer, wherein the dielectric layer is disposed on the surface of the semiconductor film layer between the first electrode and the second electrode, and the third electrode is disposed on the surface of the semiconductor film layer; The third electrode is arranged along the first electrode and the second electrode in the first direction, wherein the first electrode is the source, the second electrode is the drain, and the third electrode is the gate.

5. The semiconductor device according to any one of claims 1-4, characterized in that, The first direction is the same as the [010] crystal orientation of the n-type doped β-phase aluminum indium gallium oxide film.

6. The semiconductor device according to any one of claims 1-4, characterized in that, In n-type doped β-phase aluminum indium gallium oxide films, the chemical formula of the β-phase aluminum indium gallium oxide is β-(Al₂O₃). x In y Ga 1-x-y )2O3, where x and y satisfy: x > 0, y > 0, and x + y 0.1875, |xy|=0 or 0.03125.

7. The semiconductor device according to claim 6, characterized in that, The β-(Al) x In y Ga 1-x-y The band gap of 2O3 is greater than 4.68 eV; And or, in 10 16 cm -3 At the given electron concentration, the electron mobility of the semiconductor film is 200–1200 cm⁻¹. 2 V -1 s -1 .

8. The method for fabricating a semiconductor device according to any one of claims 1-7, characterized in that, include: Semiconductor films are formed on the surface of a substrate using epitaxial growth processes; A first electrode and a second electrode are formed on the surface of the semiconductor film.

9. The preparation method according to claim 8, characterized in that, The preparation method further includes: forming a third electrode between the first electrode and the second electrode and on the surface of the semiconductor film; Alternatively, a dielectric layer may be formed between the first electrode and the second electrode and on the surface of the semiconductor film, and then a third electrode may be formed on the surface of the dielectric layer.

10. An epitaxial wafer, characterized in that, include: A substrate, including a first surface, wherein the substrate is a single crystal. -Ga2O3 substrate, the first surface is single crystal -Ga2O3's (100) or (001) crystal planes; A semiconductor film layer is disposed on the first surface of the substrate, wherein the semiconductor film layer is n-type doped β-(Al) x In y Ga 1-x-y )2O3, where x and y satisfy: x > 0, y > 0, and x + y 0.1875, |xy|=0.03125; The surface of the semiconductor film layer facing away from the substrate and the β-(Al) x In y Ga 1-x-y The [010] crystal orientation of )2O3 is parallel.

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