Multi-thickness superposition measurement system

Abstract

A measurement system is disclosed. The measurement system may include a controller including a processor configured to execute program instructions that cause the processor to: receive a recipe including instructions for characterizing a set of samples with an optical subsystem, where the recipe includes a thickness of the set of samples; receiving an on-tool thickness measurement of the set of samples from a sample measurement subsystem; validating the thickness of the set of samples provided by the recipe with the on-tool thickness measurements generated by a sample measurement subsystem configured to measure a thickness of at least one sample from the set of samples prior to characterization by the optical subsystem; providing a sample-specific hard stop position to a focus adjustment system based on the validated thickness of the set of samples; and generating one or more measurements of the set of samples based on measurement data from the optical subsystem.

Description

[0001] Cross-reference of related applications

[0002] This application claims the right to U.S. Provisional Application No. 63 / 544,233, filed October 16, 2023, pursuant to 35 USC § 119(e), the entire contents of which are incorporated herein by reference. Technical Field

[0003] This disclosure relates to measurement systems, and more specifically, to measurement systems configured to provide measurements of objects of varying thickness. Background Technology

[0004] Many measurement systems do not account for the possibility of measuring wafers of different thicknesses using the same system, which can lead to damage if the system and / or wafer come into contact. This can also cause problems with wafer alignment and / or focusing within the measurement system. Manually switching the system from one thickness measurement to another each time a different thickness needs to be measured can take hours. Correcting current systems for varying thicknesses requires software and / or hardware updates and / or changes, which can be costly and time-consuming. Therefore, a system that addresses these shortcomings is desirable. Summary of the Invention

[0005] According to one or more embodiments of this disclosure, a measurement system is disclosed. In one embodiment, the measurement system includes a controller comprising one or more processors configured to execute program instructions. In one embodiment, the one or more processors are configured to receive one or more recipes comprising instructions for characterizing a group of samples using an optical subsystem, wherein the one or more recipes comprise the thickness of the group of samples. In one embodiment, the optical subsystem includes an objective lens. In one embodiment, the optical subsystem includes one or more detectors configured to generate measurement data based on light collected from a test sample by the objective lens. In one embodiment, the optical subsystem includes a focusing adjustment system comprising one or more translation stages configured to control a separation distance between the objective lens and the test sample. In one embodiment, the one or more processors are configured to receive on-tool thickness measurements of the group of samples from a sample measurement subsystem configured to measure the thickness of at least one sample from the group of samples before characterization by the optical subsystem, wherein the at least one sample is from the sample measurement subsystem coupled to the optical subsystem. In one embodiment, the one or more processors are configured to verify the thickness of the set of samples provided by the one or more formulations using on-tool thickness measurements generated by the sample measurement subsystem. In another embodiment, the one or more processors are configured to provide a sample-specific hard stop position to the focusing adjustment system based on the verified thickness of the set of samples. In yet another embodiment, the one or more processors are configured to generate one or more measurements of the set of samples based on measurement data from the optical subsystem.

[0006] According to one or more embodiments of this disclosure, a measurement system is disclosed. In one embodiment, the measurement system includes an optical subsystem. In one embodiment, the optical subsystem includes an objective lens. In one embodiment, the optical subsystem includes one or more detectors configured to generate measurement data based on light collected from a test sample by the objective lens. In one embodiment, the optical subsystem includes a focusing adjustment system including one or more translation stages configured to control a separation distance between the objective lens and the test sample. In one embodiment, the measurement system includes a sample management subsystem configured to receive a set of samples for measurement by the optical subsystem. In one embodiment, the measurement system includes a sample measurement subsystem configured to measure the thickness of at least one sample from the set of samples before being characterized by the optical subsystem. In one embodiment, the measurement system includes a controller including one or more processors configured to execute program instructions. In one embodiment, the one or more processors are configured to receive on-feature thickness measurements of the set of samples from the sample measurement subsystem. In one embodiment, the one or more processors are configured to verify the thickness of the set of samples provided by one or more formulations using on-tool thickness measurements generated by a sample measurement subsystem, which is configured to measure the thickness of at least one sample from the set of samples before characterization by the optical subsystem. In another embodiment, the one or more processors are configured to provide a sample-specific hard stop position to the focusing adjustment system based on the verified thickness of the set of samples. In yet another embodiment, the one or more processors are configured to generate one or more measurements of the set of samples based on measurement data from the optical subsystem.

[0007] According to one or more embodiments of this disclosure, a method is disclosed. In one embodiment, the method includes receiving one or more recipes containing instructions for characterizing a group of samples with an optical subsystem, wherein the one or more recipes contain the thickness of the group of samples, wherein the optical subsystem includes: an objective lens; one or more detectors configured to generate measurement data based on light collected from a test sample by the objective lens; and a focus adjustment system including one or more translation stages configured to control a separation distance between the objective lens and the test sample. In one embodiment, the method includes receiving an on-tool thickness measurement of the group of samples from a sample measurement subsystem. In one embodiment, the method includes verifying the thickness of the group of samples provided by the one or more recipes using the on-tool thickness measurement generated by the sample measurement subsystem, the sample measurement subsystem being configured to measure the thickness of at least one sample from the group of samples before characterization by the optical subsystem. In one embodiment, the method includes providing a sample-specific hard stop position to the focus adjustment system based on the verified thickness of the group of samples. In one embodiment, the method includes generating one or more measurements of the group of samples based on measurement data from the optical subsystem.

[0008] The present invention is provided merely as an introduction to the subject matter fully described in the detailed description and drawings. This summary should not be construed as describing essential features or used to define the scope of the claims. Furthermore, it should be understood that both the foregoing summary and the following detailed description are merely illustrative and explanatory, and do not necessarily limit the claimed subject matter. Attached Figure Description

[0009] Detailed embodiments are described with reference to the accompanying drawings. The use of the same reference numerals in the detailed embodiments and different examples in the drawings may indicate similar or identical items. Various embodiments or examples (“Examples”) of this disclosure are disclosed in the following detailed embodiments and accompanying drawings. The drawings are not necessarily to scale. Generally, the operations of the disclosed processes can be performed in any order unless otherwise specified in the claims. In the drawings:

[0010] Figure 1 This is a block diagram illustrating a measurement system according to one or more embodiments of the present disclosure.

[0011] Figure 2 This is a schematic diagram of a process for sample measurement according to one or more embodiments of the present disclosure.

[0012] Figure 3A This is a flowchart illustrating a method for superimposed measurement according to one or more embodiments of the present disclosure.

[0013] Figure 3B This is a flowchart illustrating a method for superimposed measurement according to one or more embodiments of the present disclosure.

[0014] Figure 3C This is a flowchart illustrating the steps of a method for superimposed measurement according to one or more embodiments of the present disclosure. Detailed Implementation

[0015] The disclosed subject matter will now be described in detail with reference to the accompanying drawings. This disclosure has been particularly shown and described with respect to specific embodiments and their particular features. The embodiments set forth herein should be considered illustrative rather than restrictive. It will be readily apparent to those skilled in the art that various changes and modifications in form and detail may be made without departing from the spirit and scope of this disclosure.

[0016] According to one or more embodiments of this disclosure, a measurement system capable of measuring samples of varying thickness is disclosed. The sample can be measured, and the measurements can be compared with user-defined measurements. If the measurements match, the sample can then enter an optical subsystem for characterization. The optical subsystem can perform various measurements on the sample to determine sample characteristics. Furthermore, based on the thickness of each sample, software can automatically adjust the hard stop between the sample and components of the optical subsystem for each sample. This prevents contact between the sample and the optical subsystem and maintains the sample in focus.

[0017] Figure 1 This is a block diagram illustrating a measurement system 100 according to one or more embodiments of the present disclosure.

[0018] In an embodiment, the measurement system 100 may include an optical subsystem 102. The optical subsystem 102 may be a metrology system or an inspection system. Furthermore, the optical subsystem 102 may be an image-based metrology subsystem (e.g., an imaging system, e.g., detector 112 is located at a field plane conjugate with sample 110) or a pupil plane system (e.g., detector 112 is located at a pupil plane to observe the angular distribution of light from sample 110). For example, the optical subsystem 102 may direct illumination to sample 110 and may further collect light or other radiation emitted from sample 110 to generate a superposition signal suitable for determining the superposition of two or more sample layers. As a non-limiting example, the optical subsystem 102 may be any type of superposition metrology tool known in the art suitable for generating a superposition signal suitable for determining the superposition associated with a superposition target on sample 110. As another non-limiting example, the optical subsystem may be any metrology system known in the art. As another non-limiting example, the optical subsystem 102 may be an inspection system. The optical subsystem 102 can operate selectively in imaging mode or non-imaging mode. For example, in imaging mode, individual superimposed target elements can be resolved within the illumination spot on sample 110 (e.g., as part of a bright-field image, dark-field image, or the like). As another example, the optical subsystem 102 can operate as a superposition metrology tool based on scattering measurements, wherein radiation from sample 110 is analyzed at the pupil plane to characterize the angular distribution of radiation from sample 110 (e.g., associated with scattering and / or diffraction of radiation by sample 110).

[0019] In one embodiment, the optical subsystem 102 may include an objective lens 104.

[0020] In an embodiment, the optical subsystem 102 may include a focus adjustment system 106. The focus adjustment system 106 may include one or more translation stages 108. The one or more translation stages 108 may include any number of actuators (e.g., linear, rotational, and / or angular flip / tilt actuators). The one or more translation stages 108 may be configured to control the separation distance between the objective lens 104 and the sample 110 (e.g., a test sample 110 from a set of samples 110). It should be noted that all samples 110 in the set of samples 110 may have a common thickness. However, this is not necessary, and the thicknesses of the samples 110 in the set of samples 110 may differ (e.g., at least one sample 110 in the set of samples 110 may have a thickness different from that of at least one other sample in the set of samples 110).

[0021] In an embodiment, the optical subsystem 102 includes one or more detectors 112. For example, one or more detectors 112 may be configured to generate measurement data based on light collected from sample 110 by objective lens 104 (e.g., light reflected from test sample). As another example, one or more detectors 112 may be configured to generate metrological data or inspection data based on light collected from sample 110 by objective lens 104. Measurement data may include, for example, but not limited to, data such as metrological data (e.g., superposition, critical dimension (CD), film thickness, or the like), or inspection data (e.g., identifying one or more defects on the group of samples based on inspection data, characterizing one or more defects on the group of samples based on inspection data, or the like).

[0022] In one embodiment, the measurement system 100 includes a sample management subsystem 114. The sample management subsystem 114 can be configured to receive a set of samples 110. The set of samples 110 can then be measured via an optical subsystem 102. As an example, the sample management subsystem 114 can be configured as a front-opening wafer transfer cassette (FOUP). The sample management subsystem 114 can hold any number of samples 110 (e.g., wafers). For example, the sample management subsystem 114 can hold 25 samples 110.

[0023] In an embodiment, the measurement system 100 includes a sample measurement subsystem 116. The sample management subsystem 116 can measure samples 110 (e.g., wafer thickness) using any technique known in the art (e.g., but not limited to capacitive sensors or interferometry). The sample measurement subsystem 116 can be configured to measure the thickness of at least one sample 110 from the group of samples 110. The sample measurement subsystem 116 can measure the thickness of at least one sample from the group of samples 110 before the group of samples 110 is characterized by the optical subsystem 102. The sample measurement subsystem 116 can be configured to perform multiple thickness measurements (e.g., on-tool thickness measurement involves performing multiple thickness measurements on at least one sample 110 from the group of samples 110). The optical subsystem 102 can generate one or more measurements per sample 110. For example, multiple measurements can be used to generate a thickness map of the samples 110, which can be adapted, but is not limited to, generating curvature data for the samples 110.

[0024] In one embodiment, system 100 includes a controller 118. The controller may include one or more processors 120 and memory 122.

[0025] One or more processors 120 of controller 118 may be communicatively coupled to memory 122, wherein one or more processors 120 may be configured to execute a set of program instructions maintained in memory 122, and the set of program instructions may be configured to cause one or more processors 120 to perform various functions and steps of the present disclosure.

[0026] It should be noted throughout this document that one or more components of the screening system 100 may be communicatively coupled to various other components of the screening system 100 in any manner known in the art. For example, one or more processors 120 may be communicatively coupled to each other and other components via wired (e.g., copper wire, fiber optic cable, and the like) or wireless connections (e.g., RF coupling, IR coupling, WiMax, Bluetooth, 3G, 4G, 4G LTE, 5G, and the like). As another example, controller 118 may be communicatively coupled to one or more components of the screening system 100 via any wired or wireless connection known in the art.

[0027] In embodiments, one or more processors 120 may comprise any one or more processing elements known in the art. In this sense, one or more processors 120 may comprise any microprocessor-type device configured to execute software algorithms and / or instructions. In one embodiment, one or more processors 120 may comprise a desktop computer, host computer system, workstation, graphics computer, parallel processor, or other computer system (e.g., a networked computer) configured to execute a program configured to operate the screening system 100, as described throughout this disclosure. It should be appreciated that the steps described throughout this disclosure may be performed by a single computer system or alternatively by multiple computer systems. Furthermore, it should be appreciated that the steps described throughout this disclosure may be performed on any one or more of the one or more processors 120. Generally, the term "processor" may be broadly defined to encompass any device having one or more processing elements that execute program instructions from memory 122. Furthermore, different subsystems of the measurement system 100 (e.g., optical subsystem 102, sample management subsystem 114, sample measurement subsystem 116, controller 118, and the like) may include processors or logic elements suitable for performing at least a portion of the steps described throughout this disclosure. Therefore, the foregoing description should not be construed as a limitation of this disclosure but is merely illustrative.

[0028] Memory 122 may comprise any storage medium known in the art suitable for storing program instructions executable by one or more associated processors 120 and data received from screening system 100. For example, memory 122 may comprise non-transitory memory media. For example, memory 122 may comprise, but is not limited to, read-only memory (ROM), random access memory (RAM), magnetic or optical memory devices (e.g., magnetic disks), magnetic tape, solid-state drives, and the like. It should further be noted that memory 122 may be housed within a common controller housing with one or more processors 120. In an alternative embodiment, memory 122 may be remotely located relative to the physical location of processors 120, controller 118, and the like. In another embodiment, memory 122 holds program instructions for causing one or more processors 120 to perform the various steps described in this disclosure.

[0029] One or more processors 120 may receive one or more recipes (e.g., metrological recipes). The recipes may contain instructions for characterizing the group of samples 110 using the optical subsystem 102 based on various parameters. As a non-limiting example, one or more recipes may contain instructions for characterizing the group of samples 110 based on the thickness of the group of samples 110.

[0030] One or more processors 120 may receive one or more tool-on-tool thickness measurements from the sample measurement subsystem 116. For example, the tool-on-tool thickness measurement may correspond to the thickness of at least one sample 110 from the group of samples 110 before being characterized by the optical subsystem 102. As another example, all samples 110 in the group of samples 110 may be measured individually. The tool-on-tool thickness measurement may be a thickness measurement performed by a measuring device (e.g., a tool) positioned between the sample management subsystem 114 (e.g., FOUP) and the optical subsystem 102.

[0031] One or more processors 120 may use on-tool thickness measurements from the sample measurement subsystem 116 to verify the thickness of the group of samples 110 provided in the metrology formula. For example, the metrology formula may correspond to a thickness provided by a user. As another example, the thickness may also be provided by other tools, databases, or the like. If the metrology formula does not match the on-tool thickness measurement, the measurement process may be stopped.

[0032] The proven thickness of the set of samples 110 can be used to provide a sample-specific hard stop position to the focusing adjustment system 106. For example, the sample-specific hard stop position can be configured such that there is a minimum distance between the sample 110 and the objective lens 104. The hard stop can be dynamically adjustable (e.g., the hard stop changes based on the thickness of the sample 110). This can be done for each sample 110 in the set of samples 110. For example, one or more translation stages 108 can be moved to different hard stop positions for each sample 110 to provide the desired focus level for each sample thickness. Additionally, one or more safety mechanisms can be included in the optical subsystem 102 to prevent the one or more translation stages 108 from contacting the sample 110 with the optical subsystem 102 and from crushing the sample 110 based on the sample-specific hard stop.

[0033] It should be noted that the distance between sample 110 and objective lens 104 can be any value. For example, the distance between sample 110 and objective lens 104 can be between 250 micrometers and 280 micrometers (e.g., focal length). However, the focal length can be as small as 100 micrometers.

[0034] One or more processors 120 may generate one or more measurements (e.g., thickness measurements) for each sample in the group of samples 110. One or more processors 120 may generate measurements based on data collected by the optical subsystem 102. For example, if a thickness measurement does not match an on-tool thickness measurement generated by the sample measurement subsystem 116 (e.g., the two measurements are different), the processor may be configured to generate an alarm (e.g., an audio or visual alarm). As another example, if a thickness measurement does not match an on-tool measurement generated by the sample measurement subsystem 116, then no measurement may be generated.

[0035] One or more processors 120 may generate a score for each of the group of samples 110. The score may be based on one or more sample characteristics. The one or more sample characteristics may include, but are not limited to, thickness measurements, wobbling measurements, thickness measurements, curvature measurements (e.g., wafer curvature data) and other physical parameters on the corresponding tool.

[0036] Based on wafer curvature data (e.g., when thickness measurements on the tool involve multiple thickness measurements of a given sample 110), one or more processors 120 may generate site-specific hard stop locations based on the wafer curvature data (e.g., different hard stop locations exist for different locations on the sample 110).

[0037] If sample 110 meets the selected threshold, then one or more processors 120 may further direct the optical subsystem 102 to generate data for one or more samples 110 in the group of samples 110. The processor 120 may cause the optical subsystem 102 to exclude any sample 110 in the group of samples 110 that does not meet the selected threshold.

[0038] Figure 2 This is a schematic diagram of a process for sample measurement according to one or more embodiments of the present disclosure.

[0039] In an embodiment, a group of samples 110 may be placed on a sample management subsystem 114. For example, the sample management subsystem 114 may be a FOUP. The sample management subsystem 114 may hold any number of samples 110 (e.g., samples 1 to N). In this way, the group of samples 110 comprises N samples 110.

[0040] Next, the group of samples 110 can be introduced into the sample measurement subsystem 116. The sample measurement subsystem 116 can be configured to perform a set of tool-on-tool thickness measurements on each sample 110 in the group of samples 110. Each sample 110 may have one or more tool-on-tool thickness measurements performed on it. These tool-on-tool thickness measurements can be compared with measurements provided by the user. This allows verification of the thickness of the sample 110 and informs the user whether samples 110 with different thicknesses exist. Tool-on-tool thickness measurements can be used to generate a hard stop for each sample 110.

[0041] It should be noted that the sample measurement subsystem 116 may be physically close to or integrated with the housing of the sample management subsystem 114 and / or the optical subsystem 102 (e.g., the measurement system 100 is an on-board system suitable for directly checking the sample thickness before measurement).

[0042] Next, the set of samples 110 can be introduced into the optical subsystem 102. The optical subsystem 102 can be configured to perform various measurements on each sample 110 within the set of samples 110. Hard stops can be used to provide the distance between the sample 110 (or one or more translation stages 108) and the objective lens 104. This prevents the sample 110 from contacting and being damaged by the objective lens 104. Furthermore, each sample 110 or various locations on each sample 110 can have corresponding hard stops. For example, sample 1 can have a different hard stop than sample N. As another example, multiple measurements can be performed on each sample 110, where the multiple measurements correspond to site-specific hard stop locations.

[0043] Figure 3A and 3B This is a flowchart illustrating a method 300 for superimposed measurement according to one or more embodiments of the present disclosure. The applicant notes that, in the context of the measurement system 100, the embodiments and implementation techniques previously described herein should be interpreted as extensions of method 300. However, it should further be noted that method 300 is not limited to the architecture of the measurement system 100.

[0044] In an embodiment, method 300 includes a step 302 of receiving the thickness of a set of samples 110. The thickness can come from any source, including but not limited to a user (e.g., a user-specified thickness). For example, a user-specified thickness may be provided by or included in a metrology formula (e.g., a formula containing at least the thickness of the samples). The set of samples 110 may be characterized by an optical subsystem.

[0045] In one embodiment, method 300 includes step 304 of generating an on-tool thickness measurement for the group of samples 110. For example, a sample measurement subsystem may be used to generate the on-tool thickness measurement.

[0046] In one embodiment, method 300 includes a step 306 of verifying the thickness using an on-tool thickness measurement. For example, the formulation may contain each sample of the group of samples 110. The formulation can be compared with an on-tool thickness measurement generated by the sample measurement subsystem to verify that the two measurements are identical. This can be performed before the samples 110 are characterized by the optical subsystem.

[0047] In one embodiment, method 300 includes step 308 of providing a sample-specific hard stop position to the optical subsystem for the group of samples 110 based on thickness measurements on the tool. For example, each sample in the group of samples 110 may have a different hard stop position (e.g., based on sample thickness). This allows the samples 110 in the group of samples 110 to have varying thicknesses.

[0048] In one embodiment, method 300 includes step 310 of using an optical subsystem to generate one or more measurements of sample 110 using a sample-specific hard stop position. The sample-specific hard stop position prevents the sample from contacting the objective lens. Furthermore, the generated measurement may be based on measurement data from the optical subsystem.

[0049] It should be noted that, such as Figure 3A and 3B The description states that method 300 can be formed by various arrangements of steps and processes. For example, method 300 may include steps 302 to 310 (e.g., as...). Figure 3A (As illustrated in the document). To give another example, method 300 may contain only some steps (e.g., steps 304, 308, and 310, e.g., as described in the document). Figure 3B (as explained in the text).

[0050] Figure 3C This is a flowchart illustrating additional steps 312, 314, 316 in method 300 according to one or more embodiments of this disclosure. It should be noted that... Figure 3CSteps 312, 314, and 316 described herein may be performed individually or in combination with any other steps or processes described in this disclosure. For example, step 314 may be paired with step 316, but may be performed without steps 302 through 210. As another example, step 312 may be performed without any other steps or processes described in this disclosure.

[0051] In an embodiment, method 300 includes a step 312 of generating wafer curvature data based on tool-on-tool thickness measurements. For example, each sample in the group of samples 110 may have one or more generated tool-on-tool thickness measurements. This allows wafer curvature data to be generated for each sample based on multiple tool-on-tool thickness measurements for each sample. The wafer curvature data can be used to generate site-specific hard stops (e.g., different locations on each sample have different hard stops corresponding to the wafer curvature data).

[0052] In one embodiment, method 300 includes a step 314 of generating a score for each sample within the group of samples 110 based on one or more sample characteristics, wherein the one or more sample characteristics include thickness measurements on a corresponding tool. Sample characteristics may include, but are not limited to, thickness measurements, wafer curvature data, wobbling measurements, or other physical parameters.

[0053] In an embodiment, method 300 includes step 316 of guiding an optical subsystem to generate measurement data for samples in the group of samples that have scores that meet a selected threshold and excluding the remaining samples in the group of samples.

[0054] It should be noted that the steps and processes disclosed herein for tool-on-tool thickness measurement and the generation of sample-specific (or site-specific) hard stops (with or without verification of the supplied thickness) can be performed without affecting the overall measurement throughput. For example, thickness measurements can be performed via the tool handler before a set of samples is loaded onto the tool (e.g., while the tool is measuring another sample).

[0055] The topics described herein sometimes illustrate different components housed within or connected to other components. It should be understood that such depicted architectures are merely exemplary, and many other architectures can in fact be implemented to achieve the same functionality. Conceptually, any arrangement of components achieving the same functionality is effectively “associated” to achieve the desired functionality. Therefore, any two components combined herein to achieve a particular functionality can be considered “associated” with each other to achieve the desired functionality, regardless of the architecture or intermediate components. Similarly, any two such associated components can also be considered “connected” or “coupled” with each other to achieve the desired functionality, and any two components that can be suchly associated can also be considered “coupleable” with each other to achieve the desired functionality. Specific examples of coupleability include, but are not limited to, physically interactive and / or wirelessly interactive and / or logically interactive components.

[0056] It is believed that this disclosure and its many accompanying advantages will be understood from the foregoing description, and it should be understood that various changes can be made to the form, construction, and arrangement of the components without departing from the disclosed subject matter or sacrificing all its important advantages. The forms described are merely illustrative, and the appended claims are intended to cover and encompass such changes. Furthermore, it should be understood that the invention is defined by the appended claims.

Claims

1. A measurement system comprising: A controller comprising one or more processors configured to execute program instructions that cause the one or more processors to: Receive one or more formulations containing instructions for characterizing a set of samples with an optical subsystem, wherein the one or more formulations contain the thickness of the set of samples, wherein the optical subsystem includes: Objective lens; One or more detectors configured to generate measurement data based on light collected from the test sample by the objective lens; and A focusing adjustment system comprising one or more translation stages configured to control the separation distance between the objective lens and the test sample; The tool receives thickness measurements of the group of samples from a sample measurement subsystem configured to measure the thickness of at least one sample from the group of samples prior to characterization by the optical subsystem, wherein the at least one sample is from the sample measurement subsystem coupled to the optical subsystem. The thickness of the set of samples provided by the one or more formulations is verified by the thickness measurement on the tool generated by the sample measurement subsystem; The verified thickness of the set of samples provides the focus adjustment system with sample-specific hard stop positions; and One or more measurements of the group of samples are generated based on measurement data from the optical subsystem.

2. The measurement system according to claim 1, wherein all of the group of samples have a common thickness.

3. The measurement system of claim 1, wherein at least one sample in the group of samples has a thickness different from at least one other sample in the group of samples.

4. The measurement system of claim 1, wherein the thickness measurement on the tool comprises multiple thickness measurements of at least one sample in the group of samples, wherein the one or more processors are further configured to execute program instructions that cause the one or more processors to generate wafer curvature data based on the thickness measurement on the tool.

5. The measurement system of claim 4, wherein the sample-specific hard stop position provided to the focusing adjustment system comprises a site-specific hard stop position based on the wafer curvature data.

6. The measurement system of claim 1, wherein the one or more processors are further configured to execute program instructions that cause the one or more processors to: A score is generated for each sample within the group of samples based on one or more sample characteristics, wherein the one or more sample characteristics include one or more thickness measurements on a corresponding tool; and The optical subsystem is guided to generate measurement data for samples in the group that have scores that meet a selected threshold, while excluding the remaining samples in the group.

7. The measurement system of claim 6, wherein the one or more sample characteristics further include oscillation measurement.

8. The measurement system of claim 7, wherein the tool-on-thickness measurement comprises multiple thickness measurements of at least one sample in the group of samples, wherein the one or more processors are further configured to execute program instructions that cause the one or more processors to generate wafer curvature data based on the tool-on-thickness measurement, wherein the one or more sample characteristics further include the wafer curvature data.

9. The measurement system of claim 1, wherein the one or more processors are further configured to execute program instructions that cause the one or more processors to generate an alarm simultaneously when the thickness of a sample in the group of samples differs from the thickness measurement on a corresponding tool from the sample measurement subsystem.

10. The measurement system of claim 1, wherein the optical subsystem includes a metrology subsystem, and wherein the one or more measurements of the group of samples include metrology data.

11. The measurement system of claim 10, wherein the optical subsystem includes an image-based metrology subsystem, wherein the measurement data generated by the one or more detectors includes image data.

12. The measurement system of claim 1, wherein the optical subsystem includes an inspection subsystem, and wherein the one or more measurements of the group of samples include inspection data.

13. The measurement system of claim 12, wherein the one or more processors are further configured to execute program instructions that cause the one or more processors to perform at least one of the following: characterizing or identifying one or more defects on the group of samples based on the inspection data.

14. A measurement system comprising: An optical subsystem, comprising: Objective lens; One or more detectors configured to generate measurement data based on light collected from the test sample by the objective lens; and A focusing adjustment system comprising one or more translation stages configured to control the separation distance between the objective lens and the test sample; A sample management subsystem configured to receive a set of samples for measurement by the optical subsystem; A sample measurement subsystem configured to measure the thickness of at least one sample from the group of samples prior to characterization by the optical subsystem; and A controller comprising one or more processors configured to execute program instructions that cause the one or more processors to: Receive one or more formulations containing instructions for characterizing the group of samples with the optical subsystem, wherein the one or more formulations contain the thickness of the group of samples; The tool receives thickness measurements of the group of samples from a sample measurement subsystem configured to measure the thickness of at least one sample from the group of samples prior to characterization by the optical subsystem, wherein the at least one sample is from the sample measurement subsystem coupled to the optical subsystem; The thickness of the group of samples provided by the one or more formulations is verified using the thickness measurement on the tool. The verified thickness of the set of samples provides the focus adjustment system with sample-specific hard stop positions; and One or more measurements of the group of samples are generated based on measurement data from the optical subsystem.

15. The measurement system of claim 14, wherein all of the group of samples have a common thickness.

16. The measurement system of claim 14, wherein at least one sample in the group of samples has a thickness different from at least one additional sample in the group of samples.

17. The measurement system of claim 14, wherein the tool-on-thickness measurement comprises multiple thickness measurements of at least one sample in the group of samples, wherein the one or more processors are further configured to execute program instructions that cause the one or more processors to generate wafer curvature data based on the tool-on-thickness measurement.

18. The measurement system of claim 17, wherein the sample-specific hard stop position provided to the focusing adjustment system comprises a site-specific hard stop position based on the wafer curvature data.

19. The measurement system of claim 14, wherein the one or more processors are further configured to execute program instructions that cause the one or more processors to: A score is generated for each sample within the group of samples based on one or more sample characteristics, wherein the one or more sample characteristics include one or more thickness measurements on a corresponding tool; and The optical subsystem is guided to generate measurement data for samples in the group that have scores that meet a selected threshold, while excluding the remaining samples in the group.

20. The measurement system of claim 19, wherein the one or more sample characteristics further include oscillation measurement.

21. The measurement system of claim 20, wherein the tool-on-thickness measurement comprises multiple thickness measurements of at least one sample in the group of samples, wherein the one or more processors are further configured to execute program instructions that cause the one or more processors to generate wafer curvature data based on the tool-on-thickness measurement, wherein the one or more sample characteristics further include the wafer curvature data.

22. The measurement system of claim 14, wherein the one or more processors are further configured to execute program instructions that cause the one or more processors to generate an alarm simultaneously when the thickness of a sample in the group of samples differs from the thickness measurement on a corresponding tool from the sample measurement subsystem.

23. The measurement system of claim 14, wherein the optical subsystem includes a metrology subsystem, and wherein the one or more measurements of the group of samples include metrology data.

24. The measurement system of claim 23, wherein the optical subsystem includes an image-based metrology subsystem, wherein the measurement data generated by the one or more detectors includes image data.

25. The measurement system of claim 14, wherein the optical subsystem includes an inspection subsystem, and wherein the one or more measurements of the group of samples include inspection data.

26. The measurement system of claim 25, wherein the one or more processors are further configured to execute program instructions that cause the one or more processors to perform at least one of the following: characterizing or identifying one or more defects on the group of samples based on the inspection data.

27. A method comprising: Receive one or more formulations containing instructions for characterizing a set of samples with an optical subsystem, wherein the one or more formulations contain the thickness of the set of samples, wherein the optical subsystem includes: Objective lens; One or more detectors configured to generate measurement data based on light collected from the test sample by the objective lens; and A focusing adjustment system comprising one or more translation stages configured to control the separation distance between the objective lens and the test sample; Thickness measurement on the tool received from the sample measurement subsystem; The thickness of the group of samples provided by the one or more formulations is verified by the thickness measurement on the tool generated by the sample measurement subsystem, which is configured to measure the thickness of at least one sample from the group of samples before being characterized by the optical subsystem. The verified thickness of the set of samples provides the focus adjustment system with sample-specific hard stop positions; and One or more measurements of the group of samples are generated based on measurement data from the optical subsystem.

28. The method of claim 27, wherein the thickness measurement on the tool comprises multiple thickness measurements of at least one sample in the group of samples, wherein the method further comprises generating wafer curvature data based on the thickness measurement on the tool.

29. The method of claim 28, wherein the sample-specific hard stop position provided to the focus adjustment system comprises a site-specific hard stop position based on the wafer curvature data.

30. The method of claim 27, further comprising: A score is generated for each sample within the group of samples based on one or more sample characteristics, wherein the one or more sample characteristics include one or more thickness measurements on a corresponding tool; and The optical subsystem is guided to generate measurement data for samples in the group that have scores that meet a selected threshold, while excluding the remaining samples in the group.

31. The method of claim 30, wherein the one or more sample characteristics further include oscillation measurement.

32. The method of claim 31, wherein the thickness measurement on the tool comprises multiple thickness measurements of at least one sample in the group of samples.

33. The method of claim 32, further comprising: Wafer curvature data is generated based on thickness measurements on the tool, wherein the one or more sample characteristics further include the wafer curvature data.

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