Display device and electronic device including the same

Abstract

The display device includes: a light emitting element disposed on a substrate and generating light of a preset color; and a color conversion layer disposed on the light emitting element and including a first quantum dot including a first absorption peak in an ultraviolet-visible absorption spectrum and a second quantum dot different from the first quantum dot and not including the first absorption peak in the ultraviolet-visible absorption spectrum.

Description

Technical Field

[0001] Embodiments of the present invention relate to display devices and electronic devices including display devices. For example, embodiments of the present invention relate to display devices that provide visual information and electronic devices including display devices. Background Technology

[0002] Various electronic devices are being developed to provide image information in multimedia devices such as monitors, televisions, mobile phones, tablets, navigation devices, and game consoles. For example, quantum dots are being introduced to improve the display quality of electronic devices, including liquid crystal displays and organic light-emitting diode displays.

[0003] In addition, to ensure that these electronic devices exhibit good display quality and excellent reliability, methods for improving the reliability of optical functional layers, including quantum dots, are being investigated. Summary of the Invention

[0004] [Technical Objective]

[0005] One object of the present invention is to provide a display device with improved display quality.

[0006] Another object of the present invention is to provide an electronic device with improved display quality.

[0007] However, the purpose of this invention is not limited thereto, and various modifications may be made without departing from the spirit and scope of this invention.

[0008] [Technical Solution]

[0009] A display device according to an embodiment of the present invention may include: a light-emitting element on a substrate that generates light of a preset color; and a color conversion layer on the light-emitting element that includes a first quantum dot that exhibits a first absorption peak in an ultraviolet-visible absorption spectrum and a second quantum dot that is different from the first quantum dot and does not exhibit the first absorption peak in an ultraviolet-visible absorption spectrum.

[0010] In an implementation, the weight ratio of the first quantum dot to the second quantum dot can be from about 1.5:1 to about 2.5:1.

[0011] In one embodiment, the first quantum dot may include a first core comprising indium (In) and phosphorus (P).

[0012] In an embodiment, the first quantum dot may further include a first shell surrounding the first core, and the first shell may include at least one selected from the group consisting of zinc (Zn), selenium (Se) and sulfur (S).

[0013] In one embodiment, the second quantum dot may include a second core comprising silver (Ag), indium (In), gallium (Ga), and sulfur (S).

[0014] In an embodiment, the second quantum dot may further include a second shell surrounding the second core, and the second shell may include gallium (Ga) and sulfur (S).

[0015] In an implementation, the valley depth of the first quantum dot satisfying Equation 1 below may include a value greater than about 0 and less than about 1:

[0016] Equation 1

[0017] 1-(Abs 谷 / Abs 第一 = Valley depth.

[0018] In Equation 1, Abs 第一 The absorption is at the first absorption peak, and Abs 谷 This refers to the absorption at the lowest point of the valley adjacent to the first absorption peak.

[0019] In an implementation, the first radius of the first quantum dot may be smaller than the exciton Bohr radius of the first quantum dot.

[0020] In an implementation, the second radius of the second quantum dot may be greater than the exciton Bohr radius of the second quantum dot.

[0021] In an embodiment, the maximum emission wavelength of the PL (photoluminescence) spectrum of the first quantum dot can be from about 495 nm to about 535 nm.

[0022] In an embodiment, the maximum emission wavelength of the PL spectrum of the second quantum dot can be from about 515 nm to about 545 nm.

[0023] In an embodiment, the maximum emission wavelength of the PL spectrum of the color conversion layer can be from about 511 nm to about 541 nm.

[0024] In an implementation, each of the first quantum dot and the second quantum dot may include a first ligand and a second ligand different from the first ligand.

[0025] In an embodiment, the first ligand may comprise a compound (e.g., a portion) containing a thiol group and a polyethylene glycol (e.g., a polyethylene glycol group).

[0026] In an embodiment, the second ligand may include a compound comprising a carboxylic acid ester (e.g., a carboxylic acid ester group) and an acrylic acid (e.g., an acrylic acid group).

[0027] In an implementation, the weight ratio of the first ligand to the second ligand may be from about 1.5:1 to about 4:1.

[0028] In an embodiment, the weight ratio of the sum of the weights of the first quantum dot and the second quantum dot to the sum of the weights of the first ligand and the second ligand may be from about 1.5:1 to about 5:1.

[0029] An electronic device according to an embodiment of the present invention may include a display device, the display device comprising: a substrate including a first pixel region, a second pixel region, and a third pixel region that respectively emit light of different colors; a light-emitting element provided in each of the first pixel region, the second pixel region, and the third pixel region on the substrate and generating preset light; a first light control unit provided in the first pixel region on the light-emitting element and including a first quantum dot that exhibits a first absorption peak in the ultraviolet-visible absorption spectrum and a second quantum dot that does not exhibit a first absorption peak in the ultraviolet-visible absorption spectrum; a second light control unit provided in the second pixel region on the light-emitting element and comprising the same material as the first light control unit; a third light control unit provided in the third pixel region on the light-emitting element; and a power supply module for supplying power to the display device.

[0030] In an implementation, the weight ratio of the first quantum dot to the second quantum dot can be from about 1.5:1 to about 2.5:1.

[0031] In one embodiment, the first quantum dot may include a first core comprising indium (In) and phosphorus (P), and the second quantum dot may include a second core comprising silver (Ag), indium (In), gallium (Ga), and sulfur (S).

[0032] [Beneficial Effects]

[0033] A display device according to an embodiment of the present invention may include: a light-emitting element on a substrate that generates light of a preset color; and a color conversion layer on the light-emitting element that includes a first quantum dot that exhibits a first absorption peak in an ultraviolet-visible absorption spectrum and a second quantum dot that is different from the first quantum dot and does not exhibit the first absorption peak in an ultraviolet-visible absorption spectrum.

[0034] Accordingly, the area of ​​the region where the ultraviolet-visible absorption spectrum of the color conversion layer overlaps with its PL spectrum (i.e., the deep valley region) can be minimized. In this case, the reduction in the external luminous efficiency of the display device can be minimized.

[0035] However, the effects of the present invention are not limited to those mentioned above, and various extensions can be made within the spirit and scope of the present invention. Attached Figure Description

[0036] Figure 1 A plan view illustrating a display device according to an embodiment of the present invention.

[0037] Figure 2For along Figure 1 A cross-sectional view of line II′ of the display device.

[0038] Figure 3 for Figure 2 An enlarged cross-sectional view of an example of the light control unit.

[0039] Figure 4 To show Figure 3 An enlarged cross-sectional view of an example of a quantum dot is shown in the image.

[0040] Figure 5 To show Figure 3 A diagram showing examples of the UV-Vis absorption spectra of each of the first and second quantum dots.

[0041] Figure 6 To show Figure 3 A diagram showing examples of the PL spectra of each of the first and second quantum dots.

[0042] Figure 7 To show Figure 3 Examples of UV-Vis absorption and PL spectra of each of the first quantum dot, the second quantum dot, and mixtures of the first and second quantum dots.

[0043] Figure 8 For the purpose of explanation Figure 3 A graph showing the valley depth in the UV-Vis absorption spectrum of each quantum dot. Detailed Implementation

[0044] In the following description, embodiments will be illustrated in detail with reference to the accompanying drawings. The same reference numerals are used for the same components in the drawings, and repeated descriptions of the same components will be omitted.

[0045] In this specification, a plane may be defined by a first direction D1 and a second direction D2 intersecting the first direction D1. For example, the second direction D2 may be perpendicular to the first direction D1. In one or more embodiments, a third direction D3 may be the normal direction of the plane. In one or more embodiments, the third direction D3 may be perpendicular to the plane formed by the first direction D1 and the second direction D2.

[0046] Figure 1 A plan view illustrating a display device according to an embodiment of the present invention.

[0047] refer to Figure 1 The display device DD may include a display area DA and an outer peripheral area SA. The display area DA may be surrounded by the outer peripheral area SA.

[0048] The display area DA can be an area that displays an image by generating light or adjusting the transmittance of light provided by an external light source. The peripheral area SA can be an area where no image is displayed. However, embodiments of the present invention are not limited thereto, and at least a portion of the peripheral area SA can display an image.

[0049] Multiple pixel regions PX can be provided in the display area DA to generate an image. The image can be generated by combining light emitted from each of the pixel regions PX. For example, the pixel regions PX can be provided in matrix form along a first direction D1 and a second direction D2 intersecting the first direction D1.

[0050] In one or more embodiments, the display area DA may include a first pixel area PX1, a second pixel area PX2, and a third pixel area PX3. For example, the first pixel area PX1 may emit red light. The second pixel area PX2 may emit green light. The third pixel area PX3 may emit blue light. However, embodiments of the present invention are not limited thereto. The first pixel area PX1, the second pixel area PX2, and the third pixel area PX3 may emit a combination of red, green, and blue light.

[0051] In one or more embodiments, the peripheral region SA may include a power supply module that supplies power to the display device DD.

[0052] Figure 2 For along Figure 1 A cross-sectional view of line II′ of the display device. Figure 3 for Figure 2 An enlarged cross-sectional view of an example of the light control unit.

[0053] refer to Figure 2 and Figure 3 The display device DD may include a display panel DP, a color conversion layer CCL, a color filter layer CFL, and a second substrate SUB2.

[0054] The display panel DP may include a first substrate SUB1, a transistor layer TL, light-emitting elements LED, a pixel defining layer PDL, and a thin-film encapsulation layer TFE.

[0055] The first substrate SUB1 may be a glass substrate, a metal substrate, and / or a plastic substrate. However, the embodiments of the present invention are not limited thereto, and the first substrate SUB1 may be an inorganic layer, an organic layer, or a composite material layer.

[0056] The transistor layer TL may be on the first substrate SUB1 and may include multiple transistors. Each transistor may include a control electrode, an input electrode, and an output electrode. For example, the transistor layer TL may include a switching transistor and a driving transistor for driving the light-emitting elements LEDs of the display panel DP.

[0057] The light-emitting element LED can be provided in each of the first pixel region PX1, the second pixel region PX2, and the third pixel region PX3.

[0058] Each light-emitting element (LED) may include a pixel electrode (PE), a hole transport region (HTL), an emitter layer (EML), an electron transport region (ETL), and a second electrode (CE). The hole transport region (HTL), the emitter layer (EML), the electron transport region (ETL), and the second electrode (CE) may be provided as a common layer throughout the LED. Each LED may emit a first color of light within a single wavelength range. For example, the first color of light emitted by each LED may be blue light.

[0059] The pixel defining layer (PDL) may be on the pixel electrode (PE). For example, the pixel defining layer (PDL) may expose at least a portion of the pixel electrode (PE). The pixel defining layer (PDL) may include an inorganic insulating material (e.g., an inorganic electrical insulating material) or an organic insulating material (e.g., an organic electrical insulating material).

[0060] The thin-film encapsulation layer (TFE) can cover the light-emitting element (LED). The TFE can seal the display panel (DP). The TFE can include one or more layers. In one or more embodiments, the TFE can include at least one insulating layer (e.g., at least one electrically insulating layer).

[0061] For example, the thin-film encapsulation layer TFE may include at least one inorganic encapsulation layer and at least one organic encapsulation layer.

[0062] Inorganic encapsulation layers protect the display panel (DP) from moisture / oxygen, while organic encapsulation layers protect the DP from foreign matter (such as dust particles). Inorganic encapsulation layers may include at least one selected from silicon nitride, silicon oxynitride, silicon oxide, titanium dioxide, aluminum oxide, etc. Organic encapsulation layers may include at least one selected from acrylic compounds, epoxy compounds, and photopolymerizable organic materials. These can be used individually or in combination. However, embodiments of the present invention are not limited thereto.

[0063] A color conversion layer (CCL) may be present on a display panel (DP). The CCL may include a first isolation layer (BFL1), multiple light control units (CCP1, CCP2, and CCP3), and a segmentation pattern (BMP). The CCL may also include a light converter, such as a quantum dot (QD). The light converter performs wavelength conversion on received light and then emits it. For example, the CCL may be a layer including quantum dot (QD).

[0064] In the cross-sectional view, the first isolation layer BFL1 is located below the light control units CCP1, CCP2, and CCP3. The first isolation layer BFL1 can block or reduce the exposure of the light control units CCP1, CCP2, and CCP3 to moisture / oxygen.

[0065] The first isolation layer BFL1 may include at least one inorganic layer. For example, the first isolation layer BFL1 may include a silicon compound and / or a metal oxide. Examples of silicon compounds may include silicon nitride, silicon oxynitride, etc. Examples of metal oxides may include aluminum nitride, zirconium nitride, titanium nitride, hafnium nitride, tantalum nitride, silicon oxide, aluminum oxide, titanium oxide, tin oxide, cerium oxide, etc. These may be used alone or in combination with each other.

[0066] In one or more embodiments, the first isolation layer BFL1 may further include an organic layer. The first isolation layer BFL1 may consist of a single layer or multiple layers.

[0067] The light control units CCP1, CCP2, and CCP3 may be located on the first isolation layer BFL1. For example, the first light control unit CCP1 may be located in the first pixel region PX1, the second light control unit CCP2 may be located in the second pixel region PX2, and the third light control unit CCP3 may be located in the third pixel region PX3.

[0068] like Figure 2 As shown, the segmented pattern BMP can be located between the light control units CCP1, CCP2, and CCP3, but embodiments of the present invention are not limited thereto. Figure 2 In the diagram, the segmented pattern BMP is shown as not overlapping with the light control units CCP1, CCP2 and CCP3, but at least a portion of the light control units CCP1, CCP2 and CCP3 may overlap with at least a portion of the segmented pattern BMP.

[0069] In one or more embodiments, the thickness W of each of the optical control units CCP1, CCP2, and CCP3 in the third direction D3 may be from about 7 μm to about 10 μm. However, embodiments of the present invention are not limited thereto.

[0070] In one or more embodiments, the first light control unit CCP1 may include a quantum dot QD, a scatterer SC (e.g., a light scatterer SC), and a first base resin BR1. For example, the quantum dot QD may include a first quantum dot QD1 and a second quantum dot QD2.

[0071] The first quantum dot QD1 can convert a first color light into a second color light. The first color light can be light emitted from a light-emitting element LED. For example, the first color light can be blue light. The second quantum dot QD2 can convert the first color light into a third color light. Correspondingly, the first light control unit CCP1 can convert the first color light into a fourth color light. For example, the fourth color light can be red light. However, embodiments of the present invention are not limited thereto.

[0072] In one or more embodiments, the first color light may include a wavelength range of about 450 nm to about 460 nm. The second color light may include a wavelength range of about 495 nm to about 535 nm. The third color light may include a wavelength range of about 515 nm to about 545 nm. The fourth color light may include a wavelength range of about 511 nm to about 541 nm.

[0073] In one or more embodiments, the weight ratio of the first quantum dot QD1 and the second quantum dot QD2 may be about 2:1. For example, the weight ratio of the first quantum dot QD1 and the second quantum dot QD2 may be about 1.5:1 to about 2.5:1. In one or more embodiments, the weight ratio of the first quantum dot QD1 and the second quantum dot QD2 may be about 2:1 to about 2.5:1. However, embodiments of the present invention are not limited thereto.

[0074] The scatterer SC can increase the efficiency of the first light control unit CCP1 by scattering incident light of the first color in various suitable directions. The scatterer SC can be inorganic particles. For example, the scatterer SC may include at least one selected from TiO2, ZnO, Al2O3, SiO2, and hollow silica. These can be used alone or in combination with each other.

[0075] The first base resin BR1 may be a medium in which first quantum dots QD1, second quantum dots QD2, and scatterers SC are dispersed, and may include various suitable resin compositions, commonly referred to as binders. For example, the first base resin BR1 may include at least one selected from acrylic resins, urethane resins, silicone resins, and epoxy resins. These may be used alone or in combination with each other. The first base resin BR1 may be a transparent resin.

[0076] The second light control unit CCP2 may include a first quantum dot QD1, a second quantum dot QD2, a scatterer SC, and a second base resin BR2. Descriptions that are repeated in the description of the first light control unit CCP1 may be omitted or simplified.

[0077] The second base resin BR2 may be a medium in which first quantum dots QD1, second quantum dots QD2, and scatterers SC are dispersed, and may include various suitable resin compositions, commonly referred to as binders. The second base resin BR2 may include materials substantially the same as those of the first base resin BR1.

[0078] The third light control unit CCP3 may include a scatterer SC and a third base resin BR3. Except that the third light control unit CCP3 does not include quantum dots (QD), it is substantially the same as the first light control unit CCP1 and the second light control unit CCP2. Therefore, overlapping explanations can be omitted or simplified.

[0079] The third base resin BR3 may be a medium in which the scattering agent SC can be dispersed, and may include various suitable resin compositions, commonly referred to as binders. The third base resin BR3 may include materials substantially the same as those of the first base resin BR1 and the second base resin BR2.

[0080] The color filter layer CFL can be on the color conversion layer CCL. The color filter layer CFL may include a second isolation layer BFL2 and color filters CF1, CF2 and CF3.

[0081] The second isolation layer BFL2 may be applied to the color conversion layer CCL. The second isolation layer BFL2 prevents or reduces the penetration of moisture and / or oxygen. The second isolation layer BFL2 blocks or reduces the exposure of the light control units CCP1, CCP2, and CCP3 to moisture and / or oxygen. The second isolation layer BFL2 may cover the light control units CCP1, CCP2, and CCP3.

[0082] Color filters CF1, CF2 and CF3 can be located on the second isolation layer BFL2.

[0083] For example, the first color filter CF1 may be a red color filter, the second color filter CF2 may be a green color filter, and the third color filter CF3 may be a blue color filter. Each of the color filters CF1, CF2, and CF3 may include a polymeric photosensitive resin, a pigment, and / or a dye. The first color filter CF1 may include a red pigment and / or a red dye, the second color filter CF2 may include a green pigment and / or a green dye, and the third color filter CF3 may include a blue pigment and / or a blue dye.

[0084] However, embodiments of the present invention are not limited thereto. The third color filter CF3 may not include pigments or dyes. The third color filter CF3 may include a polymeric photosensitive resin and may not include pigments or dyes. In one or more embodiments, the third color filter CF3 may be transparent. The third color filter CF3 may be formed of a transparent photosensitive resin.

[0085] In one or more embodiments, the first color filter CF1 and the second color filter CF2 may be a yellow color filter or a combination of red, green, and blue color filters. The first color filter CF1 and the second color filter CF2 may be inseparable from each other and may be provided integrally.

[0086] The second substrate SUB2 may be on the color filter layer CFL. The second substrate SUB2 may be a component providing a substrate surface, on which the color filter layer CFL and the color conversion layer CCL are provided. The second substrate SUB2 may include a glass substrate, a metal substrate, and / or a plastic substrate. However, embodiments of the present invention are not limited thereto, and the second substrate SUB2 may be an inorganic layer, an organic layer, or a composite material layer. In one or more embodiments, the second substrate SUB2 may be omitted.

[0087] Figure 4 To show Figure 3 An enlarged cross-sectional view of an example of a quantum dot is shown in the image.

[0088] refer to Figure 4 A quantum dot (QD) may include a core (CR), a first stabilizing layer (STL1), a shell (SH), a second stabilizing layer (STL2), and a ligand (LD). In one or more embodiments, the core (CR) may include a first core (CR1) and a second core (CR2). The shell (SH) may include a first shell (SH1) and a second shell (SH2). The ligand (LD) may include a first ligand (LD1) and a second ligand (LD2).

[0089] For example, Figure 3 and Figure 4 The quantum dot QD in the quantum dot can include a first quantum dot QD1 and a second quantum dot QD2. The first quantum dot QD1 can include a first core CR1, a first stable layer STL1, a first shell SH1, a second stable layer STL2, a first ligand LD1 and a second ligand LD2, and the second quantum dot QD2 can include a second core CR2, a first stable layer STL1, a second shell SH2, a second stable layer STL2, a first ligand LD1 and a second ligand LD2.

[0090] The diameter of the nuclear core (CR) can be from about 1 nm to about 10 nm. When the diameter of the CR meets the range mentioned above, the optical efficiency of the quantum dot (QD) can be excellent. In one or more embodiments, the diameter of the CR can be from about 1.2 nm to about 5 nm.

[0091] In one or more embodiments, the first core CR1 may include indium (In), phosphorus (P), etc. In one or more embodiments, examples of materials included in the first core CR1 may be group II-VI semiconductor compounds, group III-V semiconductor compounds, or any combination thereof.

[0092] Examples of group II-VI semiconductor compounds include: binary compounds such as CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, MgSe, MgS, etc.; and ternary compounds such as CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZn S, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, MgZnSe, MgZnS, etc.; and quaternary compounds, such as CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, HgZnSTe, etc. These can be used alone or in combination with each other.

[0093] Examples of materials included in Group III-V semiconductor compounds include: binary compounds such as GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InAs, InSb, etc.; ternary compounds such as GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InGaP, InNP, InAlP, InNAs, InNSb, InPAs, InPSb, etc.; and quaternary compounds such as GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, InAlPSb, etc. These can be used alone or in combination with each other. In one or more embodiments, the Group III-V semiconductor compound may further include Group II elements. Examples of group III-V semiconductor compounds that further include group II elements may include InZnP, InGaZnP, InAlZnP, etc. These can be used alone or in combination with each other.

[0094] In one or more embodiments, the second core CR2 may include silver (Ag), indium (In), gallium (Ga), and sulfur (S). In one or more embodiments, the second core CR2 may include a group I-III-VI compound.

[0095] For example, the second core CR2 may include at least one selected from AgInGaS, AgInS, AgInS2, CuInS, CuInS2, CuInGaS2, AgGaS2, CuGaS2, CuGaS2, CuGaO2, AgGaO2, and AgAlO2.

[0096] The shell SH can surround the core CR. The thickness W of the shell SH can be from about 0.5 nm to about 10 nm. Within the above range, the stability of the quantum dot QD can be excellent. The shell SH can be used as a protective layer to maintain the semiconductor properties by preventing or reducing the chemical denaturation of the core CR of the quantum dot QD and / or as a charging layer to impart electrophoretic properties to the quantum dot QD. The shell SH of the quantum dot QD can be single-layered or multi-layered.

[0097] In one or more embodiments, the first shell SH1 may include ZnS and / or ZnSeS. Examples of materials included in the first shell SH1 in one or more embodiments include CdS, CdSe, CdTe, ZnSe, ZnTe, ZnTeS, GaAs, GaP, GaS, GaSb, HgS, HgSe, HgTe, InAs, InP, InGaP, InSb, AlAs, AlP, AlSb, etc. These may be used individually or in combination with each other. However, embodiments of the present invention are not limited thereto.

[0098] In one or more embodiments, the second shell SH2 may include GaS. Examples of materials included in the second shell SH2 include CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnSeS, ZnTeS, GaAs, GaP, GaSb, HgS, HgSe, HgTe, InAs, InP, InGaP, InSb, AlAs, AlP, AlSb, etc. These may be used individually or in combination with each other. However, embodiments of the present invention are not limited thereto.

[0099] like Figure 4 As shown, a quantum dot (QD) may include a first stabilizing layer STL1 between the core (CR) and the shell (SH). In one or more embodiments, the quantum dot QD may further include a second stabilizing layer STL2 surrounding the shell (SH).

[0100] The first stabilizing layer STL1 is a layer between the core CR and the shell SH, which improves the adhesion strength between the core CR and the shell SH, and can increase the stability and reliability of the quantum dot (QD) by preventing or reducing the occurrence of defects and / or cracks inside the shell SH. The first stabilizing layer STL1 may include one or more selected from cadmium (Cd), selenium (Se), zinc (Zn), and sulfur (S). However, embodiments of the present invention are not limited thereto.

[0101] Since the second stabilizing layer STL2 mediates the shell SH and ligand LD, the stability and reliability of quantum dots (QDs) can be increased by improving the binding force between the shell SH and the ligand LD and preventing or reducing the occurrence or likelihood of core-shell defects. The second stabilizing layer STL2 may include one or more elements selected from cadmium (Cd), selenium (Se), zinc (Zn), and sulfur (S). However, embodiments of the present invention are not limited thereto.

[0102] However, the first stabilizing layer STL1 and / or the second stabilizing layer STL2 can be omitted. For example, the first stabilizing layer STL1 on the core CR can be omitted, and the shell SH can be directly provided on the core CR, and the second stabilizing layer STL2 on the shell SH can be omitted, thereby defining the quantum dot QD.

[0103] In one or more embodiments, the first radius r1 of the first quantum dot QD1 can be about 2 nm to about 4 nm. For example, the first radius r1 of the first quantum dot QD1 can be about 2.5 nm to about 3.5 nm. In one or more embodiments, the second radius r2 of the second quantum dot QD2 can be about 2 nm to about 4 nm.

[0104] In one or more embodiments, the first radius r1 may be smaller than the exciton Bohr radius of the first quantum dot QD1. The second radius r2 may be larger than the exciton Bohr radius of the second quantum dot QD2. When the radius of the quantum dot QD is smaller than the exciton Bohr radius, the quantum dot QD has the property of absorbing and emitting single photons, just like the quantum dot QD of a general-purpose semiconductor.

[0105] Quantum dot (QD) can include a ligand LD at its outermost portion. QD can exhibit physical properties dependent on the ligand LD and possess excellent dispersibility.

[0106] In one or more embodiments, the first ligand LD1 may be m(PEG)4-SH comprising a thiol group and polyethylene glycol. For example, the first ligand LD1 may comprise a compound represented by Formula 1 below.

[0107] Examples of substances included in the first ligand LD1 may include m(PEG)4-SH, butanethiol, pentathiol, hexanethiol, heptathiol, octanethiol, nonanethiol, decanethiol, undecanethiol, dodecanethiol, octadecethiol, 2-(2-methoxyethoxy)ethanethiol, 3-methoxybutyl-3-mercaptopropionate, 3-methoxybutylmercaptoacetic acid, mercaptoacetic acid, 3-mercaptopropionic acid, thioproline, 2-mercaptopropionic acid, 2-mercaptopropionate, 2-mercaptoethanol, cysteine, 1-thioglycerol, mercaptosuccinic acid, L-cysteine, dihydrolipoic acid, 2-(dimethylamino)ethanethiol, 5-mercaptomethyltetrazole, 2,3-dimercapto-1-propanol, glutathione, and m(PEG). n-SH, dialkyl (e.g., diethyl) dithiocarbamate or its salts (e.g., dialkyl dithiocarbamate), etc. These can be used alone or in combination with each other.

[0108] Formula 1

[0109]

[0110] In one or more embodiments, the second ligand LD2 may be a mono(2-acryloyloxyethyl) succinate comprising a carboxylic acid ester and acrylic acid. For example, the second ligand LD2 may comprise a compound represented by the following Formula 2.

[0111] Examples of materials included in the second ligand LD2 may include: Zn, In, Ga, Mg, Ca, Sc, Sn, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Sr, Y, Zr, Nb, Mo, Cd, Ba, Au, Hg, Tl, divalent or higher valence metals; organometallic compounds, organometallic salts, inorganic metal salts / metal halides, metal alkyl groups, metal acetates, metal acrylates, metal methacrylates, metal dialkyl dithiocarbamates, metal halides including metal chlorides, metal bromides, metal iodides, zinc chloride, indium chloride, cadmium chloride, aluminum chloride, and ferric chloride. Organometallic compounds may include, for example, manganese chloride, zinc acetate, zinc acrylate, zinc diethyldithiocarbamate, indium acetate, metal halides, and / or organometallic compounds containing relatively short organic functional groups.

[0112] Formula 2

[0113]

[0114] In one or more embodiments, the weight ratio of the first ligand LD1 to the second ligand LD2 may be from about 1.5:1 to about 4:1. For example, the weight ratio of the first ligand LD1 to the second ligand LD2 may be from about 2:1 to about 4:1. In one or more embodiments, the weight ratio of the first ligand LD1 to the second ligand LD2 may be from 2:1 to about 3:1. However, embodiments of the present invention are not limited thereto. In one or more embodiments, the weight ratio of the quantum dot QD to the ligand LD may be from about 1.5:1 to about 5:1. For example, the weight ratio of the sum of the weights of the first quantum dot QD1 and the second quantum dot QD2 to the sum of the weights of the first ligand LD1 and the second ligand LD2 is from about 1.5:1 to about 5:1. In one or more embodiments, the weight ratio of the quantum dot QD to the ligand LD may be from about 2:1 to about 4:1. For example, the weight ratio of the quantum dot QD to the ligand LD may be from about 2:1 to about 3.5:1. However, embodiments of the present invention are not limited thereto.

[0115] Figure 5 To show Figure 3 A diagram showing examples of the UV-Vis absorption spectra of each of the first and second quantum dots. Figure 6 To show Figure 3 A diagram showing examples of the PL spectra of each of the first and second quantum dots. Figure 7 To show Figure 3 Examples of UV-Vis absorption and PL spectra of each of the first quantum dot, the second quantum dot, and mixtures of the first and second quantum dots. Figure 8 For the purpose of explanation Figure 3 A graph showing the valley depth in the UV-Vis absorption spectrum of each quantum dot. For example, Figure 8 This is a graph used to explain the valley depths in the UV-Vis absorption spectrum of the first quantum dot QD1.

[0116] Figures 5 to 8 The values ​​on the vertical axis shown are in arbitrary units of au, because these values ​​only represent relative size.

[0117] Figure 5 and Figure 6 Examples of light absorption and emission in the first quantum dot QD1 and the second quantum dot QD2 are shown when light, including a wavelength range of about 450 nm to about 460 nm, is incident on each of the first quantum dot QD1 and the second quantum dot QD2.

[0118] In one or more embodiments, when light with a wavelength range of about 450 nm to about 460 nm is incident on the first quantum dot QD1, the first quantum dot QD1 can simultaneously absorb and emit light. For example... Figure 7 As shown, when the first quantum dot QD1 is a quantum dot QD including InP, the region where the first quantum dot QD1 absorbs light and the region where the first quantum dot QD1 emits light can overlap.

[0119] In one or more embodiments, when light with a wavelength range of about 450 nm to about 460 nm is incident on the second quantum dot QD2, the second quantum dot QD2 can simultaneously absorb and emit light. For example... Figure 7 As shown, when the second quantum dot QD2 is a quantum dot QD including AIGS, the region where the second quantum dot QD2 absorbs light and the region where the second quantum dot QD2 emits light can overlap.

[0120] In one or more embodiments, when the first quantum dot QD1 is a quantum dot QD including a first core CR1 containing InP and the second quantum dot QD2 is a quantum dot QD including a second core CR2 containing AIGS, when the first quantum dot QD1 and the second quantum dot QD2 are mixed together, the region in which the absorption spectrum and PL spectrum overlap is reduced compared to the region in which the absorption spectrum and PL spectrum of the second quantum dot QD2 overlap.

[0121] In one or more embodiments, when the first quantum dot QD1 is a quantum dot QD comprising a first core CR1 containing InP, the first quantum dot QD1 may have a first absorption peak in the absorption spectrum. In one or more embodiments, when the second quantum dot QD2 is a quantum dot QD comprising a second core CR2 containing AIGS, the second quantum dot QD2 may not include the first absorption peak in the absorption spectrum.

[0122] In one or more embodiments, the valley depth of the absorption spectrum of the first quantum dot QD1 may include a value greater than about 0 and less than about 1. In one or more embodiments, the valley depth of the absorption spectrum of the second quantum dot QD2 may include a value of 0. In one or more embodiments, because the Abs of the second quantum dot QD2 谷 and Abs 第一 Since the values ​​are the same, the valley depth value can be 0.

[0123] For example, valley depth can satisfy the following equation 1.

[0124] Equation 1

[0125] 1-(Abs 谷 / Abs 第一 = Valley depth

[0126] Here, Abs 第一 The absorption is at the first absorption peak, and Abs 谷 This refers to the absorption at the lowest point of the valley adjacent to the first absorption peak.

[0127] The effects of the embodiments of the present invention will now be described with reference to examples and comparative examples.

[0128] Preparation Example 1: Synthesis of InP / ZnSe / ZnS core-shell first quantum dots

[0129] 0.4 mmol (0.058 g) of indium acetate, 0.6 mmol (0.15 g) of palmitic acid, and 20 mL of 1-octadecene were introduced into the reactor and heated to 120 °C under vacuum. After 1 hour, the atmosphere in the reactor was changed to nitrogen. After heating to 280 °C, a mixed solution of 0.2 mmol (58 μl) of tris(trimethylsilyl)phosphine (TMS3P) and 1.0 mL of trioctylphosphine was rapidly injected and the reaction was allowed to proceed for 0.5 minutes.

[0130] Then, 2.4 mmol (0.448 g) of zinc acetate, 4.8 mmol of oleic acid, and 20 mL of trioctylamine were added to the reactor and heated to 120 °C under vacuum. After 1 hour, the atmosphere in the reactor was changed to nitrogen, and the reactor was heated to 280 °C. 2 mL of the previously synthesized InP core solution was added, followed by 4.8 mmol of selenium in trioctylphosphine (Se / TOP), and the final mixture was reacted for 2 hours. After rapid cooling to room temperature, ethanol was added to the resulting reaction solution, centrifuged, and the resulting precipitate was filtered under reduced pressure and dried under reduced pressure to form the InP / ZnSe core-shell.

[0131] Next, 2.4 mmol (0.448 g) of zinc acetate, 4.8 mmol of oleic acid, and 20 mL of trioctylamine were added to the reactor, and the reactor was heated to 120 °C under vacuum. After 1 hour, the atmosphere in the reactor was changed to nitrogen, and the reactor was heated to 280 °C. 2 mL of the previously synthesized InP core solution was added, followed by 4.8 mmol of sulfur (S / TOP) in trioctylphosphine, and the final mixture was allowed to react for 2 hours. After rapid cooling to room temperature, ethanol was added to the resulting reaction solution, centrifuged, and the resulting precipitate was filtered under reduced pressure and dried under reduced pressure to obtain the first quantum dots with an InP / ZnSe / ZnS core-shell structure. The emission wavelength and full width at half maximum (FWHM) of the obtained first quantum dots were 515 nm and 40 nm, respectively.

[0132] Preparation Example 2: Synthesis of AgInGaS / GaS core-shell second quantum dots

[0133] A mixed solution was prepared by placing 0.0625 mmol silver iodide (AgI, 99.999%), 1.25 mmol gallium acetylacetonate (Ga(acac)3, 99.99%), and 1 mmol sulfur (99.998%) in a three-necked flask with 1.5 mL of n-dodecyl mercaptan (DDT ≥ 98%) and 5 mL of oleylamine (OLA, 70%). The mixed solution was heated to 120 °C and degassed, then purged with N2 and grown at the growth temperature. The temperature was increased to 240 °C. AIGS cores were grown by holding this temperature for 30 minutes. 0.01 mmol indium acetate (In(Ac)3, 99.99%) was added to the AIGS core solution. The resulting mixed solution was heated to 120 °C, degassed, then purged with N2 and the temperature was increased to the growth temperature of 240 °C. AIGS cores were grown by holding this temperature for 10 minutes.

[0134] 30 nmol of AIGS core was mixed with 7 ml of oleylamine, 0.1 mmol of gallium acetylacetonate (Ga(acac)3, 99.99%), and 0.1 mmol of 1,3-dimethyl-thiourea, and the temperature was rapidly increased to 230 °C. Under inert conditions, the temperature was increased to 280 °C at a rate of 2 °C per minute. The solution was cooled to room temperature, and unreacted sulfur compounds were removed by degassing for 30 minutes. Subsequently, the reaction solution, rapidly cooled to room temperature, was precipitated in ethanol, purified by centrifugation, and dried under reduced pressure to obtain a second quantum dot with an AgInGaS / GaS core-shell structure.

[0135] The obtained second quantum dot was diluted to 0.1 w% in chloroform solution, and the emission wavelength and full width at half maximum (FWHM) were then measured using a QE-2100 (Otsuka Electronics). The emission wavelength and FWHM were measured to be 530 nm and 27 nm, respectively.

[0136] Preparation Example 3: Synthesis of InP / ZnSe / ZnS core-shell first quantum dot, first ligand, and second ligand; and synthesis of AgInGaS / GaS core-shell second quantum dot, first ligand, and second ligand.

[0137] As shown in Table 1 below, a first ligand and a second ligand are provided on the surface of each of the InP / ZnSe / ZnS core-shell first quantum dots formed by preparation example 1 and the AgInGaS / GaS core-shell second quantum dots formed by preparation example 2.

[0138] The first ligand is formed using m(PEG)4-SH, and the second ligand is formed using mono(2-acryloyloxyethyl)succinate.

[0139] Accordingly, the first quantum dot synthesized using the first ligand and the second ligand corresponds to Figure 3 The first quantum dot in the equation, and the second quantum dot synthesized using the first and second ligands, corresponds to... Figure 3 The second quantum dot in it.

[0140] As shown in Table 1 below, based on the light control unit (e.g., Figure 2 The total content of the composition of the first light control unit (CCP1) in the preparation example is as follows: the composition comprises 40 wt% quantum dots formed by preparation example 3, 4 wt% TiO2, 55 wt% monomer, and 1 wt% initiator. The monomer is a methacrylate monomer.

[0141] Accordingly, the composition is used to form a color conversion layer (e.g., Figure 2 Color conversion layer (CCL).

[0142] Table 1

[0143]

[0144] <Examples 1 to 5, Comparative Examples 1 to 2>

[0145] Table 2 below shows the comparative experimental results based on the weight ratio of the first quantum dot and the second quantum dot when a first ligand comprising m(PEG)4-SH and a second ligand comprising mono(2-acryloyloxyethyl)succinate are mixed in a 1:1 weight ratio according to Examples 1 to 5. In Comparative Example 1, the light absorption rate and external quantum efficiency of the first quantum dot were measured separately, and in Comparative Example 2, the light absorption rate and external quantum efficiency of the second quantum dot were measured separately.

[0146] In Table 2 below, InP-type materials are materials that form the first core included in the first quantum dot, and AIGS-type materials are materials that form the second core included in the second quantum dot.

[0147] Referring to Table 2 below, in Examples 1 to 5, a first quantum dot and a second quantum dot were mixed together to form a single film of about 10 μm, and light including a wavelength range of about 450 nm to about 460 nm was then applied to the single film, and the light absorption rate and external quantum efficiency were measured. In Comparative Example 1, after the first quantum dot was formed into a single film of about 10 μm, light including a wavelength range of about 450 nm to about 460 nm was incident on the single film including the first quantum dot, and the light absorption rate and external quantum efficiency were measured. In Comparative Example 2, after the second quantum dot was formed into a single film of about 10 μm, light including a wavelength range of about 450 nm to about 460 nm was incident on the single film including the second quantum dot, and the light absorption rate and external quantum efficiency were measured.

[0148] A single film corresponds to a light control section formed using the compositions shown in Table 1 above (e.g., Figure 2 The optical control units CCP1, CCP2, and CCP3 are located within the [theory / system].

[0149] As a result, referring to Table 2 below, in the single film satisfying Comparative Example 1, it can be seen that the light absorption rate is 84% ​​and the external quantum efficiency is 34%. In addition, in the single film satisfying Comparative Example 2, it can be seen that the light absorption rate is 92% and the external quantum efficiency is 25%.

[0150] Table 2

[0151]

[0152] In Example 1, in the case of a single film manufactured with a weight ratio of 1:2 for the first quantum dot and the second quantum dot, it can be seen that the light absorption rate is 88% and the external quantum efficiency is 30%.

[0153] In Example 2, in the case of a single film manufactured with a weight ratio of 1:1 for the first quantum dot and the second quantum dot, it can be seen that the light absorption rate is 87% and the external quantum efficiency is 31%.

[0154] In Example 3, in the case of a single film manufactured with a weight ratio of 2:1 for the first quantum dot and the second quantum dot, it can be seen that the light absorption rate is 87% and the external quantum efficiency is 38%.

[0155] In Example 4, in the case of a single film manufactured with a weight ratio of 4:1 for the first quantum dot and the second quantum dot, it can be seen that the light absorption rate is 85% and the external quantum efficiency is 36%.

[0156] In Example 5, in the case of a single film manufactured with a weight ratio of 8:1 for the first quantum dot QD1 and the second quantum dot QD2, it can be seen that the light absorption rate is 85% and the external quantum efficiency is 34%.

[0157] Examples 6 to 10, Comparative Examples 3 to 4

[0158] Table 3 below shows the comparative experimental results based on the weight ratio of a first ligand comprising m(PEG)4-SH and a second ligand comprising mono(2-acryloyloxyethyl)succinate, when a first quantum dot comprising a first core containing InP and a second quantum dot comprising a second core containing AIGS are mixed in a weight ratio of 2:1 according to Examples 6 to 10.

[0159] Additionally, Table 3 below shows the experimental results of Comparative Example 3, which compares the mixing of a first quantum dot containing an InP first core and a second quantum dot containing an AIGS second core at a weight ratio of 2:1, wherein only the first ligand containing m(PEG)4-SH is mixed, and Comparative Example 4, which compares the mixing of only the second ligand containing mono(2-acryloyloxyethyl)succinate.

[0160] Referring to Table 3 below, in Examples 6 to 10, a first quantum dot and a second quantum dot were mixed together in a weight ratio of 2:1 to form a single film of about 10 μm. Light in a wavelength range of about 450 nm to about 460 nm was then applied to the single film, and the light absorption rate and external quantum efficiency were measured. In Comparative Example 3, a first quantum dot and a second quantum dot were mixed together in a weight ratio of about 2:1, and a first ligand was added to form a single film of about 10 μm. Light in a wavelength range of about 450 nm to about 460 nm was then incident, and the light absorption rate and external quantum efficiency were measured.

[0161] A single film corresponds to a light control unit formed using the compositions shown in Table 1 above (e.g., Figure 2 The optical control units CCP1, CCP2, and CCP3 are located within the [theory / system].

[0162] As a result, referring to Table 3 below, according to Comparative Example 3, in a single film in which the first quantum dot synthesized with the first ligand and the second quantum dot synthesized with the first ligand are mixed in a weight ratio of 2:1, it can be seen that the light absorption rate is 88% and the external quantum efficiency is 36%.

[0163] However, in Comparative Example 4, because it was impossible to ink it individually and form a single film, the light absorption rate and external quantum efficiency could not be measured.

[0164] Table 3

[0165]

[0166] In Example 6, a single film prepared by using a first ligand and a second ligand in a weight ratio of 3:1 showed an optical absorption rate of 88% and an external quantum efficiency of 39%.

[0167] In Example 7, it can be seen that a single film manufactured with the first ligand and the second ligand in a weight ratio of 2:1 exhibits an 88% light absorption rate and an external quantum efficiency of 39%.

[0168] In Example 8, it can be seen that a single film manufactured with the first ligand and the second ligand in a 1:1 weight ratio exhibits an 87% light absorption rate and an external quantum efficiency of 38%.

[0169] In Example 9, it can be seen that a single film manufactured with the first ligand and the second ligand in a weight ratio of 1:2 exhibits an 87% light absorption rate and an external quantum efficiency of 36%.

[0170] In Example 10, it can be seen that a single film manufactured with the first ligand and the second ligand in a weight ratio of 1:3 exhibits an 87% light absorption rate and an external quantum efficiency of 36%.

[0171] As can be confirmed in Table 3, when the first quantum dot QD1 and the second quantum dot QD2 are mixed together in a weight ratio of 2:1, the external quantum efficiency is maximized or increased when the weight ratio of the first ligand LD1 to the second ligand LD2 is 2:1 or 3:1.

[0172] As a result, when the first quantum dot and the second quantum dot are mixed together to form a color conversion layer, the reabsorption and re-excitation region (rae) of the UV-Vis absorption spectrum and PL spectrum of the color conversion layer can be reduced. Specifically, when the first quantum dot and the second quantum dot are mixed together in a 2:1 weight ratio, the size of the reabsorption and re-excitation region (rae) can be minimized or reduced.

[0173] Although the invention has been described with reference to embodiments, those skilled in the art will understand that various modifications and changes may be made thereto without departing from the spirit and scope of the invention as set forth in the following claims.

[0174] [Industry Applicability]

[0175] The subject matter of this invention can be applied to display devices and electronic devices including display devices. For example, this invention can be applied to high-resolution smartphones, mobile phones, smart tablets, smartwatches, tablet PCs, vehicle navigation systems, televisions, computer monitors, laptop computers, etc.

[0176] Although the subject matter of the invention has been specifically shown and described with reference to its embodiments, those skilled in the art will understand that various changes in form and detail may be made therein without departing from the spirit or scope of the invention as defined by the following claims and their equivalents.

[0177] <Explanation of reference numerals in the attached figures>

[0178] QD1: First quantum dot; QD2: Second quantum dot

[0179] TL: Transistor layer; TFE: Film encapsulation layer

[0180] SUB1: First substrate; SUB2: Second substrate

[0181] CR: nucleus; LD: ligand

[0182] SH: Shell STL1, STL2: First and Second

[0183] BR: Base resin; SC: Scatterer

[0184] LED: Light-emitting element; CCP: Light control unit

[0185] CCL: Color Conversion Layer; CFL: Color Filter Layer

[0186] DP: Display Panel

Claims

1. A display device, comprising: A light-emitting element is placed on a substrate and generates light of a preset color. as well as A color conversion layer is provided on the light-emitting element and includes a first quantum dot that exhibits a first absorption peak in the ultraviolet-visible absorption spectrum and a second quantum dot that is different from the first quantum dot and does not exhibit a first absorption peak in the ultraviolet-visible absorption spectrum.

2. The display device according to claim 1, wherein the weight ratio of the first quantum dot to the second quantum dot is 1.5:1 to 2.5:

1.

3. The display device according to claim 1, wherein the first quantum dot comprises a first core containing indium (In) and phosphorus (P).

4. The display device of claim 3, wherein the first quantum dot further comprises a first shell surrounding the first core, and The first shell comprises at least one selected from the group consisting of zinc (Zn), selenium (Se) and sulfur (S).

5. The display device according to claim 1, wherein the second quantum dot comprises a second core containing silver (Ag), indium (In), gallium (Ga) and sulfur (S).

6. The display device of claim 5, wherein the second quantum dot further comprises a second shell surrounding the second core, and The second shell comprises gallium (Ga) and sulfur (S).

7. The display device according to claim 1, wherein the valley depth of the first quantum dot satisfying Equation 1 below includes a value greater than 0 and less than 1: Equation 1 1-(Abs 谷 / Abs 第一 = Valley depth in, Abs 第一 The absorption is at the first absorption peak, and Abs 谷 This refers to the absorption at the lowest point of the valley adjacent to the first absorption peak.

8. The display device according to claim 1, wherein the first radius of the first quantum dot is smaller than the exciton Bohr radius of the first quantum dot.

9. The display device according to claim 1, wherein the second radius of the second quantum dot is greater than the exciton Bohr radius of the second quantum dot.

10. The display device according to claim 1, wherein the maximum emission wavelength of the PL spectrum of the first quantum dot is from 495 nm to 535 nm.

11. The display device according to claim 1, wherein the maximum emission wavelength of the PL spectrum of the second quantum dot is from 515 nm to 545 nm.

12. The display device according to claim 1, wherein the maximum emission wavelength of the PL spectrum of the color conversion layer is 511 nm to 541 nm.

13. The display device of claim 1, wherein each of the first quantum dot and the second quantum dot comprises a first ligand and a second ligand different from the first ligand.

14. The display device of claim 13, wherein the first ligand comprises a compound containing a thiol group and polyethylene glycol.

15. The display device of claim 13, wherein the second ligand comprises a compound containing a carboxylic acid ester and acrylic acid.

16. The display device according to claim 13, wherein the weight ratio of the first ligand to the second ligand is 1.5:1 to 4:

1.

17. The display device of claim 13, wherein the weight ratio of the sum of the weights of the first quantum dot and the second quantum dot to the sum of the weights of the first ligand and the second ligand is 1.5:1 to 5:

1.

18. An electronic device comprising: Display device, and A power supply module that supplies power to the display device. The display device includes: The substrate includes a first pixel region, a second pixel region, and a third pixel region that emit light of different colors; A light-emitting element is present in each of the first pixel region, the second pixel region, and the third pixel region on the substrate and generates a preset light; A first light control unit is located in the first pixel region on the light-emitting element and includes a first quantum dot that exhibits a first absorption peak in the ultraviolet-visible absorption spectrum and a second quantum dot that does not exhibit a first absorption peak in the ultraviolet-visible absorption spectrum. A second light control unit is located in the second pixel region on the light-emitting element and includes the same material as the first light control unit; and The third light control unit is located in the third pixel region on the light-emitting element.

19. The electronic device of claim 18, wherein the weight ratio of the first quantum dot to the second quantum dot is from 1.5:1 to 2.5:

1.

20. The electronic device of claim 18, wherein the first quantum dot comprises a first core containing indium (In) and phosphorus (P), and The second quantum dot includes a second core comprising silver (Ag), indium (In), gallium (Ga), and sulfur (S).

Images