Package structure

Abstract

The invention discloses a packaging structure. The packaging structure comprises a dielectric structure, a redistribution structure, a plurality of light-emitting elements, a color conversion layer and a metal retaining wall. The redistribution structure is disposed in the dielectric structure. The plurality of light-emitting elements are disposed on the dielectric structure and electrically connected to the redistribution structure. The color conversion layer is disposed on the plurality of light emitting elements. The metal retaining wall is disposed on the dielectric structure and surrounds the color conversion layer.

Description

Technical Field

[0001] This invention relates to an encapsulation structure and an adaptive headlight including the same, and particularly to an encapsulation structure including a metal retaining wall and an adaptive headlight including the encapsulation structure. Background Technology

[0002] With the miniaturization of dimensions, existing packaging structures often suffer from problems such as optical crosstalk. This limits their application in applications requiring high luminous quality. Furthermore, it similarly restricts adaptive headlights, including those with complex packaging structures.

[0003] Thus, while existing encapsulation structures and adaptive headlights incorporating them have gradually met their intended uses, they are still not entirely satisfactory in all aspects. Therefore, there are still some issues regarding encapsulation structures and adaptive headlights incorporating them that need to be overcome. Summary of the Invention

[0004] The packaging structure of the present invention includes a metal barrier, which can avoid optical crosstalk between adjacent light-emitting elements among multiple light-emitting elements, thereby improving the light-emitting quality of the packaging structure.

[0005] In some embodiments, an encapsulation structure is provided. The encapsulation structure includes a dielectric structure, a redistribution structure, a plurality of light-emitting elements, a color conversion layer, and a metal barrier. The redistribution structure is disposed within the dielectric structure. The plurality of light-emitting elements are disposed on the dielectric structure and electrically connected to the redistribution structure. The color conversion layer is disposed on the plurality of light-emitting elements. The metal barrier is disposed on the dielectric structure and surrounds the color conversion layer.

[0006] In some embodiments, an adaptive headlight is provided. The adaptive headlight includes an encapsulation structure.

[0007] The packaging structure and adaptive headlamp of this invention can be applied to various types of electronic devices. To make the features and advantages of this invention more apparent and understandable, various embodiments are described below in detail with reference to the accompanying drawings. Attached Figure Description

[0008] The following detailed description, in conjunction with the accompanying drawings, will provide a better understanding of the embodiments of the present invention. It is worth noting that, according to industry standard practice, some features may not be drawn to scale. In fact, for clarity of description, the dimensions of different features may be increased or decreased.

[0009] Figure 1 This is a cross-sectional schematic diagram of the packaging structure 1 according to some embodiments of the present invention;

[0010] Figure 2 This is a partial schematic diagram of the first region R1 according to some embodiments of the present invention;

[0011] Figure 3 This is a partial schematic diagram of the second region R2 according to some embodiments of the present invention;

[0012] Figures 4 to 20 These are cross-sectional schematic diagrams showing different stages of the method for forming the packaging structure according to some embodiments of the present invention;

[0013] Figure 21 This is a cross-sectional schematic diagram of the packaging structure 2 according to some embodiments of the present invention.

[0014] Symbol explanation:

[0015] 1,2: Packaging Structure

[0016] 10:Substrate

[0017] 12: First adhesive layer

[0018] 20: Light-emitting element

[0019] 22,52: Sealing pad

[0020] 30: First dielectric layer

[0021] 32: First Rewiring Layer

[0022] 34: Second dielectric layer

[0023] 36: Second wiring layer

[0024] 38: Third dielectric layer

[0025] 40: Columnar structure

[0026] 40a: Conductive post

[0027] 40b: Heat sink

[0028] 50: Encapsulation layer

[0029] 50P: Top End

[0030] 60: Carrier plate

[0031] 62: Second adhesive layer

[0032] 70: Metal retaining wall

[0033] 70R: bottom concave part

[0034] 71: Passivation layer

[0035] 72: Reflective layer

[0036] 80: Color Conversion Layer

[0037] 80P: Bottom End

[0038] D1: First Direction

[0039] D2: Second Direction

[0040] D3: Third direction

[0041] DS: Dielectric structure

[0042] R1: First Region

[0043] R2: Second Region

[0044] RDLS: Rewiring Structure Detailed Implementation

[0045] The following provides a detailed description of the encapsulation structure and adaptive headlight of various embodiments of the present invention. It should be understood that the following description provides many different embodiments for implementing various forms of some embodiments of the present invention. The specific elements and arrangements described below are merely for the simple and clear description of some embodiments of the present invention. Of course, these are merely examples and not for limiting the present invention. Furthermore, similar and / or corresponding element symbols may be used in different embodiments to identify similar and / or corresponding elements in order to clearly describe the present invention. However, the use of these similar and / or corresponding element symbols is only for the simple and clear description of some embodiments of the present invention and does not imply any correlation between the different embodiments and / or structures discussed.

[0046] It should be understood that relative terms, such as "lower," "bottom," "higher," or "top," may be used in various embodiments to describe the relative relationship of one element to another in the figures. It is understood that if the apparatus in the figures is flipped upside down, the element described as being on the "lower" side will become the element on the "higher" side. Embodiments of the invention may be used in conjunction with the accompanying drawings. Figure 1It is understood that the accompanying drawings of this invention are also considered part of the disclosure. Furthermore, when referring to a first element being on or over a second element, this may include situations where the first and second elements are in direct contact, or situations where they are not in direct contact, i.e., where one or more other elements may be spaced between them. However, if the first element is directly on the second element, it indicates that the first and second elements are in direct contact. Moreover, it should be understood that the ordinal numbers used in the specification and claims, such as "first," "second," etc., to modify elements, are not intended to imply any prior ordinal number for that (or those) element, nor to represent the order of one element with another, or the order of manufacturing processes. The use of these ordinal numbers is solely to clearly distinguish an element with a given name from another element with the same name. The claims and specification may not use the same terminology; for example, a first element in the specification may be a second element in a claim.

[0047] In this document, the terms "approximately," "about," and "substantially" generally indicate that a given value or range is within 10%, 5%, 3%, 2%, 1%, or 0.5%. The given quantities are approximate, meaning that the terms "approximately," "about," or "substantially" are implied even without specific mention. The phrases "the range is between the first and second values" or "the first value ~ the second value" indicate that the range includes the first value, the second value, and other values ​​in between. Furthermore, any two values ​​or directions used for comparison may have a certain degree of error. If the first value equals the second value, it implies an error of approximately 10%, 5%, 3%, 2%, 1%, or 0.5% between the first and second values. If the first direction is perpendicular to the second direction, the angle between the first and second directions can be between 80 and 100 degrees. If the first direction is parallel to the second direction, the angle between the first and second directions can be between 0 and 10 degrees.

[0048] In this invention, the directions are not limited to the three axes of a Cartesian coordinate system such as the X-axis, Y-axis, and Z-axis, and can be interpreted in a broader sense. For example, the X-axis, Y-axis, and Z-axis may be perpendicular to each other, or may represent different directions that are not perpendicular to each other, but are not limited thereto. For ease of explanation, in the following text, the X-axis direction is the first direction D1 (width direction), the Y-axis direction is the second direction D2 (length direction), and the Z-axis direction is the third direction D3 (thickness or depth direction). In some embodiments, the cross-sectional view described herein is a cross-sectional view of the XZ plane. In some embodiments, the third direction D3 may be the normal direction of the light-emitting element 20.

[0049] Reference Figure 1 This is a cross-sectional schematic diagram of the packaging structure 1 according to some embodiments of the present invention. For example... Figure 1 As shown, in some embodiments, the packaging structure 1 may include a dielectric structure DS, a redistribution structure RDLS, a plurality of light-emitting elements 20, a color conversion layer 80, and a metal barrier 70.

[0050] like Figure 1 As shown, in some embodiments, the dielectric structure DS may include one or more dielectric layers. In some embodiments, the dielectric layer may include oxides such as silicon oxide, nitrides such as silicon nitride, oxynitrides such as silicon oxynitride, the like, or combinations thereof, but the invention is not limited thereto. In some embodiments, the dielectric layer may include epoxy resin, polyimide (PI), polybenzoxazole (PBO), or silicone resin. In some embodiments, the dielectric structure DS may include 1 to 100 dielectric layers, but the invention is not limited thereto. For example, the number of dielectric layers may be 1, 2, 3, 4, 5, 10, 20, 30, 40, 50, 60, 70, 80, 90, 100, or any value or range of any combination of the aforementioned values, but the invention is not limited thereto. For ease of illustration, Figure 1 The dielectric structure DS may include three dielectric layers. For example, the dielectric structure DS may include a first dielectric layer 30, a second dielectric layer 34, and a third dielectric layer 38 stacked in sequence.

[0051] like Figure 1As shown, in some embodiments, the redistribution structure RDLS may be disposed within the dielectric structure DS. In some embodiments, the redistribution structure RDLS may include one or more redistribution layers. In some embodiments, the redistribution layer may include a conductive material. In some embodiments, the aforementioned conductive material may include metals, conductive metal oxides, conductive metal nitrides, the like, or combinations thereof, but the invention is not limited thereto. For example, metals may include tin (Sn), copper (Cu), gold (Au), silver (Ag), nickel (Ni), indium (In), platinum (Pt), palladium (Pd), iridium (Ir), titanium (Ti), chromium (Cr), tungsten (W), aluminum (Al), molybdenum (Mo), titanium (Ti), magnesium (Mg), zinc (Zn), alloys thereof, or compounds thereof, or combinations thereof, but the invention is not limited thereto. For example, the conductive metal oxide may be a transparent conductive oxide (TCO). For example, transparent conductive oxides may include indium tin oxide (ITO), antimony zinc oxide (AZO), tin oxide (SnO), zinc oxide (ZnO), indium zinc oxide (IZO), indium gallium zinc oxide (IGZO), indium tin zinc oxide (ITZO), antimony tin oxide (ATO), and their analogues or combinations thereof, but the invention is not limited thereto. For example, conductive metal nitrides may include TiN, WN, TaN, their analogues or combinations thereof, but the invention is not limited thereto.

[0052] In some embodiments, the redistribution structure RDLS may include 1 to 100 redistribution layers, but the present invention is not limited thereto. For example, the number of redistribution layers may be 1, 2, 3, 4, 5, 10, 20, 30, 40, 50, 60, 70, 80, 90, 100, or any value or range of values ​​between the aforementioned values, but the present invention is not limited thereto. For ease of explanation, Figure 1 The redistribution structure RDLS may include two redistribution layers. For example, the redistribution structure RDLS may include a first redistribution layer 32 and a second redistribution layer 36 stacked sequentially. In some embodiments, the redistribution layers of the redistribution structure RDLS may be stacked alternately with the dielectric layers of the dielectric structure DS. The dielectric layers of the dielectric structure DS may serve as insulating layers between the redistribution layers of the redistribution structure RDLS.

[0053] like Figure 1As shown, in some embodiments, a plurality of light-emitting elements 20 may be disposed on a dielectric structure DS. In some embodiments, the plurality of light-emitting elements 20 may be electrically connected to a redistribution structure RDLS. In some embodiments, the plurality of light-emitting elements 20 may be arranged at intervals between each other. In some embodiments, in a top view, the plurality of light-emitting elements 20 may be arranged in an array. In some embodiments, the light-emitting element 20 may be a light-emitting diode (LED), a sub-millimeter light-emitting diode (miniLED), a micro light-emitting diode (microLED), the like, or a combination thereof, but the invention is not limited thereto. In some embodiments, the light-emitting element 20 may emit red light, green light, blue light, ultraviolet light (UV light), or other suitable wavelengths of light.

[0054] In some embodiments, the light-emitting element 20 may include a substrate (not shown), a semiconductor stack (not shown), an insulating layer (not shown), a functional layer such as a reflective layer (not shown), and a pad 22. In some embodiments, the semiconductor stack may include a first semiconductor layer (not shown), a light-emitting layer (not shown), and a second semiconductor layer (not shown) stacked sequentially, and the first and second semiconductor layers have different conductivity types. In some embodiments, the pad 22 may be electrically connected to the semiconductor stack. In some embodiments, the pad 22 may include the aforementioned conductive material. In some embodiments, the light-emitting element 20 may be electrically connected to a redistribution structure RDLS via the pad 22. In some embodiments, the light-emitting element 20 may be a flip chip. In some embodiments, the light-emitting element 20 does not have a substrate; for example, the light-emitting element 20 does not have an epitaxial substrate of a patterned sapphire substrate (PSS) (e.g., the light-emitting element 20 includes a semiconductor stack, but does not include a patterned sapphire substrate on which the semiconductor stack is grown), and its light-emitting surface has periodically arranged uneven textures generated after laser photoexfoliation of the patterned sapphire substrate.

[0055] In some embodiments, the number of light-emitting elements 20 in the packaging structure 1 can be 1 to 10,000. For example, the number of light-emitting elements 20 can be 1, 2, 3, 4, 5, 25, 100, 2500, 10000, or any value or a range of values ​​between the aforementioned values, but the present invention is not limited thereto. In some embodiments, the number of light-emitting elements 20 in the packaging structure 1 can be n x m, where n can be a positive integer from 1 to 100, and m can be a positive integer from 1 to 100. In this embodiment, the light-emitting elements 20 can be arranged in an array of n columns and m rows. For ease of explanation, in the case of... Figure 1 The cross-sectional schematic diagram shown depicts five light-emitting elements 20, but the present invention is not limited thereto.

[0056] like Figure 1 As shown, in some embodiments, a color conversion layer 80 may be disposed on each of a plurality of light-emitting elements 20 to convert the color (i.e., wavelength) of light emitted from each of the plurality of light-emitting elements 20. In some embodiments, the width of the color conversion layer 80 may be substantially equal to the width of the light-emitting element 20. In some embodiments, the projection range of the light-emitting element 20 onto the first dielectric layer 30 may lie within or completely overlap with the projection range of the color conversion layer 80 onto the first dielectric layer 30. In some embodiments, the color conversion layer 80 may be formed by a dispensing process, a deposition process, other suitable fabrication processes, or a combination thereof, but the invention is not limited thereto. In some embodiments, the color conversion layer 80 may be used to convert light emitted by the light-emitting element 20 having a first wavelength into light having a second wavelength, wherein the first wavelength is different from the second wavelength.

[0057] In some embodiments, the color conversion layer 80 may include a color conversion matrix and a wavelength conversion material dispersed in the color conversion matrix. In some embodiments, the color conversion matrix may include a transparent resin. For example, the color conversion matrix may include acrylate-based resin, organosiloxane-based resin, acrylate-modified polyurethane, acrylate-modified organosilicon-based resin, epoxy resin, the like, or combinations thereof, but the invention is not limited thereto.

[0058] In some embodiments, the wavelength conversion material may include red light conversion materials, blue light conversion materials, green light conversion materials, yellow light conversion materials, other suitable light conversion materials, or combinations thereof. In some embodiments, the red light conversion material may include red quantum dots or red phosphors, but the invention is not limited thereto. For example, the red light conversion material may include (Sr,Ca)AlSiN3:Eu 2+ Ca2Si5N8:Eu 2+ Sr(LiAl3N4):Eu 2+ The invention may include manganese-doped red fluoride phosphors, their analogues, or combinations thereof, but is not limited thereto. The manganese-doped red fluoride phosphor may include K2GeF6:Mn 4+ K2SiF6:Mn 4+ K2TiF6:Mn 4+The invention may include, but is not limited to, analogues or combinations thereof. In some embodiments, the blue light conversion material may include blue quantum dots or blue phosphors, but the invention is not limited to these. In some embodiments, the green light conversion material may include green quantum dots or green phosphors, but the invention is not limited to these. For example, the green light conversion material may include lumbrotite (LuAG) phosphor, yttrium aluminum garnet (YAG) phosphor, β-SiAlON phosphor, silicate phosphor, analogues, or combinations thereof, but the invention is not limited to these. In some embodiments, the yellow light conversion material may include yellow quantum dots or yellow phosphors. For example, the yellow light conversion material may include yttrium aluminum garnet (YAG) phosphor.

[0059] In some embodiments, the light-emitting element 20 may emit blue light, and the color conversion layer 80 may include a yellow light conversion material. For example, the yellow light conversion material may be yttrium aluminum garnet (YAG) phosphor. Therefore, the light emitted by the light-emitting element 20 may become white light after passing through the color conversion layer 80. In some embodiments, the light-emitting element 20 may emit blue light, and the color conversion layer 80 may include a combination of green and red light conversion materials. For example, the color conversion layer 80 may include green cyron phosphor and red K2SiF6:Mn. 4+ Therefore, the light emitted by the light-emitting element 20 can become white light after passing through the color conversion layer 80. In some embodiments, the color conversion layer 80 may include a combination of green phosphor and two red phosphors, wherein, for example, the color conversion layer 80 may include green silron phosphor and red K2SiF6:Mn. 4+ With red (Sr,Ca)AlSiN3:Eu 2+ In some embodiments, the color conversion layer 80 may include red quantum dots and green quantum dots. In some embodiments, the color conversion layer 80 may include a red quantum dot film and a green quantum dot film.

[0060] In some embodiments, the color conversion layer 80 may further include diffused particles dispersed in the encapsulation matrix. In some embodiments, the diffused particles may include inorganic particles, organic polymer particles, or combinations thereof. For example, inorganic particles may include silicon oxide, titanium oxide, aluminum oxide, calcium carbonate, barium sulfate, or any combination thereof, but the invention is not limited thereto. For example, organic polymer particles may include polymethyl methacrylate (PMMA), polystyrene (PS), acrylonitrile-butadiene-styrene copolymer (ABS), polyurethane (PU), or any combination thereof, but the invention is not limited thereto.

[0061] like Figure 1As shown, in some embodiments, a metal barrier 70 may be disposed on the dielectric structure DS. In some embodiments, the metal barrier 70 may surround the color conversion layer 80. In some embodiments, the metal barrier 70 may cover at least one side surface or all side surfaces of the color conversion layer 80. In some embodiments, the metal barrier 70 may include a metal. For example, the metal may include tin, copper, gold, silver, nickel, indium, platinum, palladium, iridium, titanium, chromium, tungsten, aluminum, molybdenum, titanium, magnesium, zinc, alloys thereof, or compounds thereof, or combinations thereof, but the invention is not limited thereto. In some embodiments, the metal barrier 70 may include copper.

[0062] like Figure 1 As shown, in some embodiments, the encapsulation structure 1 may include a reflective layer 72. In some embodiments, the reflective layer 72 may be disposed on the dielectric structure DS. In some embodiments, the reflective layer 72 may be disposed between the color conversion layer 80 and the metal barrier 70. In some embodiments, the reflective layer 72 may surround the color conversion layer 80, and the metal barrier 70 may surround the reflective layer 72. In some embodiments, the reflective layer 72 may include a reflective material. For example, the reflective material may include metals, white paint, white photoresist, the like, or combinations thereof, but the invention is not limited thereto. For example, metals may include tin, copper, gold, silver, nickel, indium, platinum, palladium, iridium, titanium, chromium, tungsten, aluminum, molybdenum, titanium, magnesium, zinc, alloys thereof, or compounds thereof, or combinations thereof, but the invention is not limited thereto. In some embodiments, the reflectivity of the reflective material of the reflective layer 72 at the wavelength of visible light may be greater than or equal to 80%. For example, the reflectivity of the reflective material at the wavelength of visible light can be 80%, 85%, 90%, 95%, 99%, 99.9%, or any value or range of values ​​between the aforementioned values, but the present invention is not limited thereto.

[0063] like Figure 1As shown, in some embodiments, the encapsulation structure 1 may include an encapsulation layer 50 and a columnar structure 40. In some embodiments, the encapsulation layer 50 and the columnar structure 40 may jointly serve to carry and support a plurality of light-emitting elements 20. In some embodiments, a dielectric structure DS may be disposed between the encapsulation layer 50 and a metal barrier 70. In some embodiments, the metal barrier 70 may be disposed on the top surface of the dielectric structure DS, and the encapsulation layer 50 may be disposed on the bottom surface of the dielectric structure DS. In other words, the metal barrier 70 and the encapsulation layer 50 may be disposed on opposite surfaces of the dielectric structure DS. In some embodiments, the encapsulation layer 50 may include a molding material. For example, the molding material may include epoxy resin, silicone resin, the like, or combinations thereof, but the invention is not limited thereto. For example, the molding material may include an epoxy molding compound (EMC). The epoxy molding compound may include epoxy resin, phenolic resin, silica, other suitable materials, but the invention is not limited thereto. The encapsulation layer 50 includes the molding material and diffused particles (fillers). In some embodiments, the diffused particles include titanium dioxide (TiO2), silicon dioxide (SiO2), boron oxide (BN), aluminum oxide (Al2O3), or zirconium dioxide (ZrO2). In some embodiments, the diffused particles include hollow silicon dioxide (SiO2) or solid silicon dioxide (SiO2). In some embodiments, the encapsulation layer 50 includes two or more different sizes of diffused particles. For example, the encapsulation layer 50 includes two, three, four, or five or more different sizes of diffused particles. In some embodiments, the diffused particles may be spherical or elongated. In some embodiments, the encapsulation layer 50 includes two or more spherical diffused particles with different radii.

[0064] In some embodiments, the metal barrier 70 may contact the first dielectric layer 30. In some embodiments, the encapsulation layer 50 may contact the third dielectric layer 38. In some embodiments, the second dielectric layer 34 may be disposed between the first dielectric layer 30 and the third dielectric layer 38. In some embodiments, the first redistribution layer 32 may be disposed between the first dielectric layer 30 and the second dielectric layer 34. In some embodiments, the second redistribution layer 36 may be disposed on the first redistribution layer 32 to electrically connect a plurality of light-emitting elements 20.

[0065] In some embodiments, the columnar structure 40 may be disposed in the encapsulation layer 50. In some embodiments, the encapsulation layer 50 may surround at least one or all side surfaces of the columnar structure 40. In some embodiments, the columnar structure 40 may include the aforementioned conductive material. In some embodiments, the material of the columnar structure 40 may be the same as the material of the metal barrier 70. In other embodiments, the material of the columnar structure 40 may be different from the material of the metal barrier 70. In some embodiments, the thermal conductivity of the columnar structure 40 may be the same as the thermal conductivity of the metal barrier 70. In some embodiments, the columnar structure 40 may include copper, and the metal barrier 70 may include copper (Cu). Accordingly, when the material of the columnar structure 40 is the same as the material of the metal barrier 70, or when the thermal conductivity of the columnar structure 40 is the same as the thermal conductivity of the metal barrier 70, the thermal conductivity efficiency, heat dissipation uniformity, and / or reliability of the encapsulation structure 1 can be improved.

[0066] In some embodiments, the columnar structure 40 may include conductive pillars 40a and heat dissipation pillars 40b. In some embodiments, the conductive pillars 40a and heat dissipation pillars 40b of the columnar structure 40 may be physically separated from each other. In other words, the conductive pillars 40a and heat dissipation pillars 40b of the columnar structure 40 may be spaced apart by a distance. In some embodiments, the conductive pillars 40a of the columnar structure 40 may electrically connect the redistribution structure RDLS and a plurality of light-emitting elements 20. In some embodiments, the conductive pillars 40a of the columnar structure 40 may pass through the third dielectric layer 38 and be electrically connected to the second redistribution layer 36. Therefore, the conductive pillars 40a can be used to electrically connect the light-emitting elements 20 to other elements.

[0067] In some embodiments, the heat sink 40b may be electrically isolated from the redistribution structure RDLS and the plurality of light-emitting elements 20. In some embodiments, the heat sink 40b of the columnar structure 40 may be disposed on the top surface of the third dielectric layer 38 and may not penetrate the third dielectric layer 38. In some embodiments, the heat sink 40b of the columnar structure 40 may be physically separated from the second redistribution layer 36. In other words, the heat sink 40b of the columnar structure 40 may be spaced apart from the second redistribution layer 36 by a distance. Therefore, the heat sink 40b can be used to dissipate heat.

[0068] In some embodiments, the heat sink 40b may be located below at least one of the plurality of light-emitting elements 20. In some embodiments, the projection range of at least one of the plurality of light-emitting elements 20 onto the first dielectric layer 30 may be within the projection range of the heat sink 40b onto the first dielectric layer 30. Accordingly, since the heat sink 40b may be disposed adjacent to the plurality of light-emitting elements 20, the heat dissipation effect on the plurality of light-emitting elements 20 may be improved, thereby improving the light emission quality, light emission stability, and / or reliability of the light-emitting elements 20. In some embodiments, the conductive pillar 40a may surround the heat sink 40b. Accordingly, the conductive pillar 40a may increase the setting margin of the conductive path of the package structure 1. Therefore, the pillar structure 40 may simultaneously provide electrical connection function and heat dissipation function.

[0069] like Figure 1 As shown, in some embodiments, the encapsulation structure 1 may include a pad 52. In some embodiments, the pad 52 may be electrically connected to the columnar structure 40. In some embodiments, the pad 52 may cover the bottom surface of the columnar structure 40. In some embodiments, the material of the pad 52 may be the same as or different from the material of the columnar structure 40. In some embodiments, the pad 52 may include the aforementioned conductive material. The pad 52 electrically connected to the conductive post 40a of the columnar structure 40 may have an electrical connection function for electrical connection to external components. The pad 52 electrically connected to the heat dissipation post 40b of the columnar structure 40 may have a heat dissipation function to improve the heat dissipation efficiency of the heat sink including the heat dissipation post 40b and the pad 52.

[0070] Accordingly, the redistribution structure RDLS, conductive pillar 40a, and pad 52 in the packaging structure 1 can collectively serve as extended electrodes of the light-emitting element 20 to improve luminous efficiency, enhance bonding reliability, and / or prevent electrical failure. Specifically, bonding processes such as fusion bonding are difficult to align, leading to reduced luminous efficiency, insufficient bonding reliability, and even electrical failure of the light-emitting element 20. Furthermore, the precise alignment required by bonding processes such as fusion bonding limits the manufacturing process margin. Therefore, by using the redistribution structure RDLS, conductive pillar 40a, and pad 52 as extended electrodes in the packaging structure 1, the aforementioned problems in pad-to-pad (point-to-point) bonding structures can be effectively avoided.

[0071] In some embodiments, in a top view (not shown), the metal retaining wall 70 may be mesh-shaped. For example, in a top view (not shown), the metal retaining wall 70 may include a plurality of arrayed frames. In other words, as Figure 1The six metal barriers 70 shown can be physically connected to each other. In some embodiments, in a top view (not shown), the conductive pillars 40a and heat dissipation pillars 40b in the columnar structure 40 are physically separate pillars.

[0072] Reference Figure 2 This is a partial schematic diagram of the first region R1 in some embodiments of the present invention. Figure 2 Display as shown Figure 1 A schematic diagram of the first region R1 of the package structure 1 shown. (See diagram below.) Figure 2 As shown, in some embodiments, the bottom end portion 80P of the color conversion layer 80 may protrude toward the metal barrier 70. In some embodiments, the metal barrier 70 may have a bottom recess 70R corresponding to the color conversion layer 80. In some embodiments, a reflective layer 72 may be compliantly formed on the bottom recess 70R of the metal barrier 70, so that the reflective layer 72 may be located between the bottom end portion 80P of the color conversion layer 80 and the bottom recess 70R of the metal barrier 70.

[0073] Reference Figure 3 This is a partial schematic diagram of the second region R2 in some embodiments of the present invention. Figure 3 Display as shown Figure 1 A schematic diagram of the second region R2 of the package structure 1 shown. Figure 3 As shown, in some embodiments, the top end portion 50P of the encapsulation layer 50 may protrude toward the conductive post 40a of the columnar structure 40. In some embodiments, the conductive post 40a may have a recess corresponding to the encapsulation layer 50. In some embodiments, the top end portion 50P of the encapsulation layer 50 may also protrude toward the heat dissipation post 40b of the columnar structure 40. In some embodiments, the heat dissipation post 40b may also have a recess corresponding to the encapsulation layer 50.

[0074] Reference Figures 4 to 20 These are cross-sectional schematic diagrams of different stages of the formation method of the packaging structure in some embodiments of the present invention.

[0075] like Figure 4As shown, in some embodiments, a substrate 10 is provided, and a first adhesive layer 12 is formed on the substrate 10. In some embodiments, the substrate 10 may include silicon, glass, sapphire, ceramic, other suitable substrates, or combinations thereof, but the invention is not limited thereto. In some embodiments, the substrate 10 may include polyimide (PI), polycarbonate (PC), polyethylene terephthalate (PET), polypropylene (PP), other suitable substrates, or combinations thereof, but the invention is not limited thereto. In some embodiments, the first adhesive layer 12 may serve as a separation layer or a release layer. In some embodiments, the first adhesive layer 12 may include ultraviolet (UV) adhesive, thermally dissociative adhesive, light-to-heat conversion (LTHC) adhesive, other suitable pyrolytic adhesives, or combinations thereof, but the invention is not limited thereto. In some embodiments, the first adhesive layer 12 may be formed by a coating process, other suitable forming processes, or combinations thereof, but the invention is not limited thereto.

[0076] like Figure 5 As shown, in some embodiments, a plurality of light-emitting elements 20 are formed on the first adhesive layer 12. In some embodiments, the bottom surface of the light-emitting element 20 contacts the first adhesive layer 12, and the pad 22 of the light-emitting element 20 is exposed.

[0077] like Figure 6 As shown, in some embodiments, a first dielectric layer 30 is formed on a plurality of light-emitting elements 20 and a first adhesive layer 12. In some embodiments, the first dielectric layer 30 may expose the pads 22 of the light-emitting elements 20. In some embodiments, the first dielectric layer 30 may be formed by chemical vapor deposition, other suitable fabrication processes, or a combination thereof, but the invention is not limited thereto.

[0078] like Figure 7 As shown, in some embodiments, a first redistribution layer 32 is formed on the first dielectric layer 30 and the pad 22 of the light-emitting element 20. In some embodiments, the first redistribution layer 32 may be formed by electroplating, chemical vapor deposition, sputtering, atomic layer deposition, other suitable forming processes or combinations thereof, but the present invention is not limited thereto.

[0079] like Figure 8 As shown, in some embodiments, a second dielectric layer 34 is formed on the first redistribution layer 32 and the first dielectric layer 30. In some embodiments, the second dielectric layer 34 may expose the pads 22 of the light-emitting element 20. In some embodiments, the method of forming the second dielectric layer 34 may be the same as or different from the method of forming the first dielectric layer 30.

[0080] like Figure 9As shown, in some embodiments, a second redistribution layer 36 is formed on the second dielectric layer 34, the first redistribution layer 32, and the pad 22 of the light-emitting element 20. In some embodiments, the method for forming the second redistribution layer 36 may be the same as or different from the method for forming the first redistribution layer 32.

[0081] like Figure 10 As shown, in some embodiments, a third dielectric layer 38 is formed on the second redistribution layer 36 and the second dielectric layer 34. In some embodiments, the third dielectric layer 38 may expose the second redistribution layer 36. In some embodiments, the method of forming the third dielectric layer 38 may be the same as or different from the method of forming the first dielectric layer 30.

[0082] like Figure 11 As shown, in some embodiments, columnar structures 40 are formed on the third dielectric layer 38 and the second redistribution layer 36. In some embodiments, the columnar structures 40 can be formed by electroplating, chemical vapor deposition, sputtering, atomic layer deposition, other suitable forming processes, or combinations thereof, but the invention is not limited thereto. For example, the columnar structures 40 can be formed by electroplating. In some embodiments, conductive pillars 40a and heat dissipation pillars 40b can be formed in the same fabrication process or in different fabrication processes. In some embodiments, in a top view, the columnar structures 40 may have an array shape.

[0083] like Figure 12 As shown, in some embodiments, an encapsulation layer 50 is formed on the columnar structure 40 and the third dielectric layer 38. In some embodiments, the encapsulation layer 50 may cover the top and side surfaces of the columnar structure 40 and the top surface of the third dielectric layer 38. In some embodiments, the method of forming the encapsulation layer 50 may be the same as or different from the method of forming the first dielectric layer 30.

[0084] like Figure 13 As shown, in some embodiments, a removal fabrication process is performed to make the top surface of the encapsulation layer 50 flush with the top surface of the columnar structure 40. In some embodiments, the removal fabrication process may include a chemical mechanical polishing process, other suitable removal fabrication processes, or combinations thereof, but the invention is not limited thereto.

[0085] like Figure 14 As shown, in some embodiments, a pad 52 is formed on the columnar structure 40. In some embodiments, the pad 52 may be formed by electroplating, chemical vapor deposition, sputtering, atomic layer deposition, other suitable forming processes, or combinations thereof, but the invention is not limited thereto. In some embodiments, the width of the pad 52 may be greater than the width of the column in the columnar structure 40.

[0086] like Figure 15As shown, in some embodiments, a carrier plate 60 is provided, and a second adhesive layer 62 is formed on the carrier plate 60. In some embodiments, the material of the carrier plate 60 may be the same as or different from the material of the substrate 10. In some embodiments, the material of the first adhesive layer 12 may be the same as or different from the material of the second adhesive layer 62. In some embodiments, the pad 52 and the carrier plate 60 can be bonded through the second adhesive layer 62. Then, it can be flipped up and down to obtain... Figure 15 The structure shown.

[0087] like Figure 16 As shown, in some embodiments, the substrate 10 and the first adhesive layer 12 can be removed. In some embodiments, the substrate 10 and the first adhesive layer 12 can be removed by a removal fabrication process corresponding to the first adhesive layer 12. For example, when the first adhesive layer 12 can be a UV-dissociative adhesive, the removal fabrication process may include irradiating with ultraviolet light.

[0088] like Figure 17 As shown, in some embodiments, a metal barrier 70 is formed on the first dielectric layer 30. In some embodiments, the metal barrier 70 can be formed by electroplating, chemical vapor deposition, sputtering, atomic layer deposition, other suitable formation processes, or combinations thereof, but the invention is not limited thereto. For example, the metal barrier 70 can be formed on the surface of the first dielectric layer 30 where the light-emitting element 20 is not disposed by a mask. In some embodiments, the metal barrier 70 may expose the light-emitting element 20. In some embodiments, the metal barrier 70 may not overlap the light-emitting element 20 on the third direction D3.

[0089] like Figure 18 As shown, in some embodiments, a reflective layer 72 is formed on the side surface of the metal barrier 70. In some embodiments, the reflective layer 72 can be formed by electroplating, chemical vapor deposition, sputtering, atomic layer deposition, other suitable fabrication processes, or combinations thereof, but the invention is not limited thereto. In some embodiments, the reflective layer 72 may expose the light-emitting element 20. In some embodiments, on the third direction D3, the reflective layer 72 may not overlap with the light-emitting element 20. In other words, the light-emitting surface of the light-emitting element 20 is not blocked by the reflective layer 72 and the metal barrier 70.

[0090] like Figure 19 As shown, in some embodiments, a color conversion layer 80 is formed in a blanket manner on the side and top surfaces of the light-emitting element 20, the reflective layer 72, and the top surface of the metal barrier 70.

[0091] like Figure 20As shown, in some embodiments, a removal fabrication process is performed to make the top surface of the color conversion layer 80, the top surface of the reflective layer 72, and the top surface of the metal barrier 70 flush. In some embodiments, the removal fabrication process may include a chemical mechanical polishing process, other suitable removal fabrication processes, or combinations thereof, but the invention is not limited thereto. In some embodiments, the carrier plate 60 and the second adhesive layer 62 may be further removed. In some embodiments, the carrier plate 60 and the second adhesive layer 62 may be removed by a removal fabrication process corresponding to the second adhesive layer 62. Thus, as can be obtained... Figure 1 The packaging structure shown is 1.

[0092] Reference Figure 21 This is a cross-sectional schematic diagram of the packaging structure 2 according to some embodiments of the present invention. For example... Figure 21 As shown, in some embodiments, the encapsulation structure 2 may include a passivation layer 71. In some embodiments, the passivation layer 71 may be disposed on the dielectric structure DS. In some embodiments, the passivation layer 71 may be disposed between the reflective layer 72 and the metal barrier 70. In some embodiments, the passivation layer 71 may be used to protect the metal barrier 70 from degradation by the external environment, such as oxidation, sulfidation, or other types of degradation. For example, the passivation layer 71 may serve as an anti-sulfidation layer. In some embodiments, the reflective layer 72 may surround the color conversion layer 80, the passivation layer 71 may surround the reflective layer 72, and the metal barrier 70 may surround the passivation layer 71.

[0093] In some embodiments, the passivation layer 71 may comprise a metal, an oxide, a nitride, other suitable passivation materials, or a combination thereof, but the invention is not limited thereto. In some embodiments, the reactivity of the material of the passivation layer 71 may be lower than that of the material of the metal barrier 70. In some embodiments, the passivation layer 71 may comprise a metal, and the metal barrier 70 may comprise a metal. In some embodiments, the passivation layer 71 may comprise gold (Au) or nickel (Ni), and the metal barrier 70 may comprise copper (Cu). In some embodiments, the following... Figure 17 A passivation layer 71 can be formed on the side surface of the metal barrier 70. Then, a process similar to... Figures 18 to 20 The manufacturing process shown is used to form the packaging structure 2.

[0094] In some embodiments, the adaptive headlamp may include encapsulation structures 1, 2, or a combination thereof, but the invention is not limited thereto. In some embodiments, the adaptive headlamp may include a processor (not shown) and an image capturing device (not shown). In some embodiments, the processor may be electrically connected to the encapsulation structure to perform calculations. In some embodiments, the processor may include a central processing unit (CPU), a multi-core CPU, a graphics processing unit (GPU), the like, or a combination thereof, but the invention is not limited thereto. In some embodiments, the image capturing device may include a camera, a video recorder, the like, or a combination thereof, but the invention is not limited thereto. In some embodiments, the image capturing device may capture and transmit images to the processor. In some embodiments, the processor analyzes the captured images to determine whether one or more of the plurality of light-emitting elements 20 in the encapsulation structure are turned on or off. For example, at least one of the plurality of light-emitting elements 20 may be turned on or off depending on the environment.

[0095] Accordingly, the packaging structure of the present invention uses a metal barrier to block light emitted by one of the multiple light-emitting elements from shining onto another. Therefore, the metal barrier of the present invention can avoid optical crosstalk, thereby improving the light emission quality of the packaging structure. For example, the light-emitting element of the present invention can have a large emission angle to improve the light emission uniformity of the light-emitting element. Simultaneously, the metal barrier can prevent optical crosstalk between light-emitting elements with large emission angles. Therefore, the present invention can improve light emission uniformity and / or avoid optical crosstalk.

[0096] Furthermore, the encapsulation structure of the present invention may include a reflective layer to further reflect unwanted light, thereby further avoiding optical crosstalk. Additionally, the encapsulation structure of the present invention may include a passivation layer between the metal barrier and the reflective layer to improve the reliability of the metal barrier. The encapsulation structure of the present invention may include a columnar structure, and the columnar structure may include conductive pillars and heat dissipation pillars. Therefore, the encapsulation structure of the present invention can be electrically connected to external components through the conductive pillars. The encapsulation structure of the present invention can improve heat dissipation through the heat dissipation pillars, thereby improving the luminous stability of the light-emitting element. Thus, the present invention provides an improved encapsulation structure with high luminous quality and an adaptive headlamp including the encapsulation structure.

[0097] Components in the embodiments of this invention can be freely mixed and matched as long as they do not violate the spirit of the invention or conflict with it. Furthermore, the scope of protection of this invention is not limited to the manufacturing processes, machines, manufacturing methods, material compositions, apparatuses, methods, and steps described in the specific embodiments of the specification. Any manufacturing processes, machines, manufacturing methods, material compositions, apparatuses, methods, and steps that are currently or will be developed can be understood from the disclosure of this invention, and can be used according to this invention as long as they can perform substantially the same function or obtain substantially the same result in the embodiments described herein. Therefore, the scope of protection of this invention includes the aforementioned manufacturing processes, machines, manufacturing methods, material compositions, apparatuses, methods, and steps. No embodiment or claim of this invention needs to achieve all the objects, advantages, and / or features disclosed in this invention.

[0098] The above outlines several embodiments to enable those skilled in the art to better understand the viewpoints of the embodiments of the present invention. Those skilled in the art should understand that they can design or modify other manufacturing processes and structures based on the embodiments of the present invention to achieve the same purpose and / or advantages as the embodiments described herein. Those skilled in the art should also understand that such equivalent manufacturing processes and structures do not depart from the spirit and scope of the present invention, and that they can make various changes, substitutions, and replacements without departing from the spirit and scope of the present invention.

Claims

1. A packaging structure, comprising: Dielectric structure; A redistribution structure is provided within this dielectric structure; Multiple light-emitting elements are disposed on the dielectric structure and electrically connected to the redistribution structure; A color conversion layer is disposed on the plurality of light-emitting elements; and A metal barrier is disposed on the dielectric structure and surrounds the color conversion layer.

2. The packaging structure as described in claim 1, further comprising: A reflective layer is disposed on the dielectric structure and between the color conversion layer and the metal barrier.

3. The encapsulation structure of claim 2, wherein the reflective layer surrounds the color conversion layer.

4. The packaging structure as described in claim 2, further comprising: A passivation layer is disposed on the dielectric structure and between the reflective layer and the metal barrier.

5. The packaging structure of claim 4, wherein the passivation layer comprises gold (Au) or nickel (Ni).

6. The packaging structure of claim 5, wherein the metal barrier comprises copper (Cu).

7. The packaging structure as described in claim 1, further comprising: An encapsulation layer, wherein the dielectric structure is disposed between the encapsulation layer and the metal barrier; and A columnar structure is disposed within this encapsulation layer.

8. The encapsulation structure of claim 7, wherein, in a top view, the metal barrier is in the shape of a mesh.

9. The encapsulation structure of claim 7, wherein the top end of the encapsulation layer protrudes toward the columnar structure.

10. The encapsulation structure of claim 7, wherein the material of the columnar structure is the same as the material of the metal retaining wall.

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