Thin film deposition system and thin film deposition control method

Abstract

The invention relates to a thin film deposition system and a thin film deposition control method, and relates to the technical field of vacuum coating, an ion source device and a magnetic control cathode are located on the same side of a carrier plate and are arranged in a first direction, and an opening of the ion source device faces the magnetic control cathode; the first plasma generated by the ion source device is coupled with the second plasma generated by the magnetic control cathode to generate coupled plasma, so that the plasma density in the system is improved, the ionization efficiency of the plasma is remarkably improved, the discharge impedance is reduced, the sputtering voltage is further reduced, and the sputtering efficiency is improved. At the moment, when the substrate to be coated on the carrier plate is coated, the problem of magnetron sputtering damage is reduced due to low voltage.

Description

Technical Field

[0001] This application relates to the field of vacuum coating technology, and in particular to a thin film deposition system and a thin film deposition control method. Background Technology

[0002] Among traditional thin film deposition methods, magnetron sputtering is a relatively common preparation method.

[0003] The particle energy in magnetron sputtering is closely related to the discharge voltage during the discharge process. When the discharge voltage is high, sputtering damage can occur on the device to which the thin film is to be prepared, leading to a decrease in device performance. In existing solutions, increasing the magnetic field strength / total magnetic flux on the target surface can reduce the sputtering voltage. However, since the voltage cannot be reduced further after the magnetic field strength reaches a certain level, the reduction is limited. Moreover, an excessively strong magnetic field can also lead to a decrease in film uniformity.

[0004] Therefore, how to reduce sputtering voltage to reduce sputtering damage has become a technical problem that urgently needs to be solved by those skilled in the art. Summary of the Invention

[0005] Therefore, it is necessary to provide a thin film deposition system and a thin film deposition control method to address the problem of how to reduce sputtering voltage to reduce sputtering damage.

[0006] To achieve the above objectives, in one aspect, the present invention provides a thin film deposition system, comprising:

[0007] Carrier plate, used to hold the substrate to be coated;

[0008] A magnetron cathode is located on one side of the carrier plate;

[0009] An ion source device and a magnetron cathode are located on the same side of the carrier plate, and the ion source device and the magnetron cathode are arranged sequentially along a first direction, which is parallel to the carrier plate.

[0010] The ion source device has an opening, on which a first plasma is generated and the magnetron cathode generates a second plasma; the opening of the ion source device faces the magnetron cathode.

[0011] In one embodiment, the thin film deposition system further includes:

[0012] A first radio frequency power supply, connected to the ion source device, is used to control the ion source device to generate the first plasma;

[0013] A first DC power supply, the positive terminal of which is connected to the ion source device, and the negative terminal of which is grounded, are used to push the first plasma toward the magnetron cathode.

[0014] A second DC power supply, the negative terminal of which is connected to the magnetron cathode, and the positive terminal of which is grounded, are used to control the magnetron cathode to generate the second plasma.

[0015] In one embodiment, the thin film deposition system further includes:

[0016] A filter is located between the first DC power supply and the ion source device;

[0017] The control device is electrically connected to the first radio frequency power supply and the second DC power supply to achieve synchronization of the arc signal and / or pulse signal of the first radio frequency power supply and the second DC power supply.

[0018] In one embodiment, the ion source device includes an anode portion, the anode portion including a first magnet array;

[0019] The magnetron cathode includes a target and a magnetic rod, and the magnetic rod includes a second magnet array;

[0020] The first magnet array and the second magnet array each include an inner magnet and an outer magnet, respectively;

[0021] The magnetic poles of the inner magnets of the first magnet array are opposite to those of the inner magnets of the second magnet array; the magnetic poles of the outer magnets of the first magnet array are opposite to those of the outer magnets of the second magnet array.

[0022] In one embodiment, the total magnetic flux of the inner magnets of the first magnet array is greater than the total magnetic flux of the outer magnets of the first magnet array.

[0023] The total magnetic flux of the inner magnets in the second magnet array is greater than the total magnetic flux of the outer magnets in the second magnet array.

[0024] In one embodiment, the ion source device further includes:

[0025] The cathode portion includes a cathode housing and a central cathode located inside the cathode housing. The opening of the ion source device is located between the cathode housing and the central cathode. The cathode portion is grounded, and the anode portion is located between the cathode housing and the central cathode.

[0026] The anode portion further includes:

[0027] A first magnetic yoke, wherein the first magnetic array is disposed on one side of the first magnetic yoke;

[0028] A water-cooled base is located on the side of the first magnetic yoke away from the first magnet array, and the water-cooled base has a water inlet and a water outlet;

[0029] An insulating pad is located on the side of the water-cooled base away from the first magnetic yoke;

[0030] The anode housing, the first magnetic yoke and the first magnet array are located between the anode housing and the water-cooled base.

[0031] In one embodiment, the thin film deposition system further includes:

[0032] A baffle is located on the side of the carrier plate closer to the ion source device, and at least exposes the orthogonal projection area of ​​the magnetron cathode on the carrier plate.

[0033] In one embodiment, the angle between the orientation of the opening and the carrier plate is in the range of -15° to 15°.

[0034] On the other hand, a thin film deposition control method is also provided for the above-mentioned thin film deposition system, comprising:

[0035] Turn on the first radio frequency power supply to generate the first plasma from the ion source device;

[0036] Turn on the first DC power supply and control the first plasma to move toward the magnetron cathode;

[0037] Turn on the second DC power supply to generate the second plasma from the magnetron cathode;

[0038] The second plasma is coupled with the first plasma to bombard the target material of the magnetron cathode, causing the target material ions generated by the bombardment to be deposited on one side of the substrate to be coated on the carrier plate.

[0039] In one embodiment, prior to generating plasma, the following is also included:

[0040] The vacuum chamber is evacuated to a low pressure; a discharge gas, including an inert gas and a reactive gas, is introduced into the vacuum chamber.

[0041] In one embodiment, the control signals of the first radio frequency power supply and the second DC power supply are synchronously controlled.

[0042] The control signals for the first radio frequency power supply and the second DC power supply are arc signals and / or pulse signals.

[0043] In one embodiment, when the charge accumulation on the target and the substrate to be coated cannot be neutralized, the first radio frequency power supply and the second DC power supply are controlled to be turned off synchronously.

[0044] Compared with existing technologies, the above technical solution has the following advantages:

[0045] In the thin film deposition system and thin film deposition control method of this application, the ion source device and the magnetron cathode are located on the same side of the carrier plate and arranged in a first direction. The opening of the ion source device faces the magnetron cathode. The first plasma generated by the ion source device is coupled with the second plasma generated by the magnetron cathode to generate coupled plasma, which increases the plasma density in the system and significantly improves the plasma ionization efficiency, thereby reducing the discharge impedance and further reducing the sputtering voltage. When depositing a film on the substrate to be coated on the carrier plate, the problem of magnetron sputtering damage is reduced due to the lower voltage. Attached Figure Description

[0046] To more clearly illustrate the technical solutions in the embodiments of this application or the conventional technology, the drawings used in the description of the embodiments or the conventional technology will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0047] Figure 1 This application provides a schematic diagram of the structure of a thin film deposition system.

[0048] Figure 2 A schematic diagram of the cross-sectional structure of the ion source device provided in the embodiments of this application along section AA;

[0049] Figure 3 This is a schematic diagram of a thin film deposition system with baffles provided in an embodiment of this application;

[0050] Figure 4 A schematic flowchart of a thin film deposition control method provided in an embodiment of this application;

[0051] Figure 5 A schematic flowchart of another thin film deposition control method provided in an embodiment of this application;

[0052] Figure 6 This is a schematic flowchart of another thin film deposition control method provided in an embodiment of this application.

[0053] Explanation of reference numerals in the attached figures:

[0054] Carrier plate 01; Magnetron cathode 02; Target material 021; Second magnet array 022; Second magnetic yoke 023; Ion source device 03; Opening 031; Cathode shell 032; Central cathode 033; First magnetic yoke 034; Water-cooled base 035; Inlet 0351; Outlet 0352; Insulating pad 036; Anode shell 037; Vacuum chamber 04; First radio frequency power supply 05; Radio frequency generator 051; Matching unit 052; Second DC power supply 06; Signal control line 061; First DC power supply 07; Filter 071; First magnet array 08; First magnetic trap track 09; Corrugated pipe 10; Baffle 11; Inner magnet a; Outer magnet b. Detailed Implementation

[0055] To facilitate understanding of this application, a more complete description will be provided below with reference to the accompanying drawings, which illustrate embodiments of the present application. However, the present application can be implemented in many different forms and is not limited to the embodiments described herein. Rather, these embodiments are provided so that the disclosure of this application will be more thorough and complete.

[0056] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the application.

[0057] It should be understood that when a layer is referred to as "on," "adjacent to," or "connected to" other layers, it can be directly on, adjacent to, or connected to other layers, or there can be intervening layers. Conversely, when an element is referred to as "directly on," "directly adjacent to," or "directly connected to" other layers, there are no intervening layers.

[0058] When used herein, the singular forms of “a,” “an,” and “the” may also include the plural forms unless the context clearly indicates otherwise. It should also be understood that the terms “comprising,” “including,” or “having,” etc., specify the presence of the stated feature, whole, step, operation, component, part, or combination thereof, but do not preclude the possibility of the presence or addition of one or more other features, wholes, steps, operations, components, parts, or combinations thereof.

[0059] Based on the background information, during the deposition of a transparent conductive film (TCO) in magnetron sputtering, the cathode sheath potential is relatively high due to the impedance of the magnetron cathode, and the presence of electronegative gases (generally oxygen ionized to O2) can also cause problems. 2- Or O - The target material is ionized into InO -This causes electronegative particles to be accelerated by the cathode sheath during film deposition, carrying high energy (the energy carried is approximately equal to the cathode potential, for example, the cathode potential is 300V, and the highest energy of electronegative gas is about 300ev) and bombarding the surface of the substrate to be coated, resulting in damage to some sensitive substrates and transparent conductive films (such as the amorphous silicon or microcrystalline silicon passivation layer under the transparent conductive film in heterojunction cells).

[0060] Regarding the impedance of the magnetron cathode, the discharge voltage in conventional magnetron sputtering using TCO ceramic targets is approximately 300V. Current industry methods generally involve enhancing the magnetic field on the target surface to improve the binding capacity of secondary electrons, thereby further reducing the magnetron cathode impedance. However, there is an upper limit to the impedance reduction from increased magnetic field strength; the lowest known voltage is still around 230V. Furthermore, excessively strong target surface magnetic fields can lead to other process problems, such as relatively unstable discharge, worsened film uniformity (which cannot be adjusted using conventional methods to meet application requirements), and consequently, unmet film uniformity requirements, further deteriorating target utilization, reducing material utilization and equipment uptime, and increasing production costs.

[0061] Based on this, this application provides a thin film deposition system and a thin film deposition control method, wherein an ion source device and a magnetron cathode are located on the same side of a carrier plate and arranged in a first direction, and the opening of the ion source device faces the magnetron cathode. The first plasma generated by the ion source device is coupled with the second plasma generated by the magnetron cathode to generate coupled plasma, which increases the plasma density in the system and significantly improves the ionization efficiency of the plasma, thereby reducing the discharge impedance and further reducing the sputtering voltage. At this time, when depositing a film on the substrate to be coated on the carrier plate, the problem of magnetron sputtering damage is reduced due to the lower voltage.

[0062] To make the above-mentioned objectives, features and advantages of this application more apparent and understandable, this application will be further described in detail below with reference to the accompanying drawings and specific embodiments.

[0063] refer to Figure 1 , Figure 1 This application provides a schematic diagram of a thin film deposition system; the thin film deposition system includes:

[0064] Carrier plate 01 is used to place the substrate to be coated;

[0065] Magnetron cathode 02 is located on one side of carrier plate 01;

[0066] The ion source device 03 and the magnetron cathode 02 are located on the same side of the carrier plate 01, and the ion source device 03 and the magnetron cathode 02 are arranged sequentially along the first direction X, which is parallel to the carrier plate 01.

[0067] The ion source device 03 has an opening 031, on which a first plasma is generated and a second plasma is generated by the magnetron cathode 02; the opening 031 of the ion source device 03 faces the magnetron cathode 02.

[0068] Specifically, the thin film deposition system includes a carrier plate 01 on which a substrate to be coated can be placed to facilitate coating on the substrate. It should be noted that during coating, the substrate to be coated on the carrier plate 01 moves in the first direction X to perform coating sequentially.

[0069] The magnetron cathode 02 and the ion source device 03 are both located on the same side of the carrier plate 01 where the substrate to be coated is placed, and the ion source device 03 and the magnetron cathode 02 are arranged sequentially along a first direction X, which is parallel to the carrier plate 01. The ion source device 03 has an opening 031 facing the magnetron cathode 02. During coating, a first plasma is generated on the opening 031 side of the ion source device 03, and a second plasma is generated by the magnetron cathode 02. The first plasma and the second plasma are coupled to each other.

[0070] It should be noted that the ion source device 03 can be a linear ion source or a nonlinear ion source without specific limitations, and can be selected according to specific needs.

[0071] It should also be noted that the carrier plate 01, the magnetron cathode 02, and the ion source device 03 are all placed inside the vacuum chamber 04. This can eliminate the interference of gas molecules on the coating process and ensure the quality, consistency, and process stability of the film.

[0072] In this embodiment, during the coupling process between the first plasma and the second plasma, secondary electrons are generated. These secondary electrons can be captured by the magnetron cathode 02 and collide with the ionized gas multiple times, generating a plasma "avalanche effect". At this time, the plasma density in the system is significantly increased, which significantly improves the plasma ionization efficiency, thereby reducing the discharge impedance and further reducing the sputtering voltage. When coating the substrate to be coated on the carrier plate 01, the lower voltage reduces the problem of magnetron sputtering damage.

[0073] In another embodiment of this application, such as Figure 1 As shown, the thin film deposition system also includes:

[0074] The first radio frequency power supply 05 is connected to the ion source device 03 and is used to control the ion source device 03 to generate the first plasma.

[0075] The first DC power supply 07 is connected to the ion source device 03 with its positive terminal connected to the ion source device 03 and its negative terminal grounded, and is used to push the first plasma toward the magnetron cathode 02.

[0076] The second DC power supply 06 has its negative terminal connected to the magnetron cathode 02 and its positive terminal grounded, and is used to control the magnetron cathode 02 to generate the second plasma.

[0077] Specifically, the thin film deposition system is also equipped with a first radio frequency power supply 05, a first DC power supply 07, and a second DC power supply 06.

[0078] The first radio frequency power supply 05 is connected to the ion source device 03, thereby controlling the ion source device 03 to generate the first plasma. It should be noted that the first radio frequency power supply 05 consists of a radio frequency generator 051 (RFG) and a match network 052. The two work together to achieve a complete link for stable power output, impedance matching, and efficient energy transfer to the first plasma.

[0079] The first DC power supply 07 can adopt a pulsed DC constant voltage mode. The positive terminal of the first DC power supply 07 is connected to the ion source device 03, and the negative terminal of the first DC power supply 07 is grounded, thereby pushing the first plasma toward the magnetron cathode 02 to facilitate the coupling of the first plasma and the second plasma.

[0080] The negative terminal of the second DC power supply 06 is connected to the magnetron cathode 02. The second DC power supply 06 adopts a DC constant voltage mode, and the positive terminal of the second DC power supply 06 is grounded, thereby controlling the magnetron cathode 02 to generate the second plasma.

[0081] During the coating process, the second DC power supply 06 and the first RF power supply 05 can be controlled synchronously, that is, the signal control lines 061 of the second DC power supply 06 and the first RF power supply 05 are the same.

[0082] In this embodiment, synchronously controlling the switching on and off of the second DC power supply 06 and the first RF power supply 05 can ensure that the charge in the vacuum chamber 04 remains stable, avoid arc risk, stabilize the discharge process, and improve product yield.

[0083] In another embodiment of this application, the thin film deposition system further includes:

[0084] Filter 071 is located between the first DC power supply 07 and the ion source device 03;

[0085] The control device (not shown) is electrically connected to the first radio frequency power supply 05 and the second DC power supply 06. accomplish Synchronization of the arc signal and / or pulse signal of the first RF power supply 05 and the second DC power supply 06.

[0086] Specifically, the positive terminal of the first DC power supply 07 is connected to the ion source device 03 through the filter 071.

[0087] It should be noted that the first DC power supply 07 uses pulsed power supply, which can suppress the risk of arcing. At the same time, it optimizes the output waveform quality through filtering, thereby achieving stable voltage and low-interference transmission.

[0088] The control device can be electrically connected to the first radio frequency power supply 05 and the second DC power supply 06 through the signal control line 061, so that the arc signal and / or pulse signal of the second DC power supply 06 and the first radio frequency power supply 05 are synchronized, that is, the second DC power supply 06 and the first radio frequency power supply 05 are turned off / on at the same time.

[0089] It should be noted that the control device can achieve synchronization of pulse signals and / or arc signals through algorithms.

[0090] In another embodiment of this application, the ion source device 03 includes an anode section, which includes a first magnet array 08;

[0091] The magnetron cathode 02 includes a target material 021 and a magnetic rod, the magnetic rod including a second magnet array 022;

[0092] The first magnet array 08 and the second magnet array 022 respectively include an inner magnet a and an outer magnet b;

[0093] The magnetic poles of the inner magnet a of the first magnet array 08 are opposite to those of the inner magnet a of the second magnet array 022; the magnetic poles of the outer magnet b of the first magnet array 08 are opposite to those of the outer magnet b of the second magnet array 022, thereby enhancing the coupling efficiency between the ion source and the magnetron cathode.

[0094] Specifically, the ion source device 03 includes an anode section, which includes a first magnet array 08. It should be noted that the first magnet array 08 includes an inner magnet a and an outer magnet b. For example, the inner magnet a is the S pole and the outer magnet b is the N pole. The outer magnet b can surround the inner magnet a.

[0095] refer to Figure 2 , Figure 2 This is a schematic diagram of the cross-sectional structure of the ion source device provided in the embodiment of this application along section AA; a first magnetic trap track 09 is formed between the inner magnet a and the outer magnet b of the first magnet array 08. The first magnetic trap track 09 can capture secondary electrons, thereby forming a plasma avalanche and increasing the plasma density.

[0096] The magnetron cathode 02 includes a second magnet array 022. It should be noted that the second magnet array 022 includes an inner magnet a and an outer magnet b. For example, the inner magnet a is the N pole and the outer magnet b is the S pole. The outer magnet b can surround the inner magnet a.

[0097] The inner magnet a and the outer magnet b of the second magnet array 022 form a second magnetic trap track (not shown), which can increase the density of the second plasma.

[0098] The target material 021 surrounds the second magnet array 022 to generate sputtered particles for film deposition. The magnetron cathode 02 also has a second magnetic yoke 023, on which the second magnet array 022 is mounted. The magnetron cathode 02 is used to form a closed-loop second magnetic trap raceway on the target surface, improving plasma ionization efficiency and reducing discharge impedance.

[0099] It should be noted that the magnetron cathode 02 is also connected to a dynamic feeding end mechanism (not shown) that supports the rotation of the target material, which is used to support and rotate the magnetron cathode 02.

[0100] The magnetic poles of the inner magnets a in the first magnet array 08 and the outer magnets b in the second magnet array 022 are opposite. For example, the inner magnet a in the first magnet array 08 has the S pole, and the inner and outer magnets in the first magnet array 08 have the N pole. The inner magnet a in the second magnet array 022 has the N pole, and the outer magnet b in the second magnet array 022 has the S pole.

[0101] In this embodiment, the inner and outer magnets of the first magnet array 08 and the second magnet array 022 have opposite magnetic poles, so the magnetic lines of force formed will be linked together to form a link coupling, that is, to form a stable conduction path, which can enhance the coupling efficiency between the ion source device 03 and the magnetron cathode 02.

[0102] In another embodiment of this application, the total magnetic flux of the inner magnet a of the first magnet array 08 is greater than the total magnetic flux of the outer magnet b of the first magnet array 08.

[0103] The total magnetic flux of the inner magnet a of the second magnet array 022 is greater than the total magnetic flux of the outer magnet b of the second magnet array 022.

[0104] Specifically, the total magnetic flux of the inner magnet a of the first magnet array 08 is greater than the total magnetic flux of the outer magnet b of the first magnet array 08. At this time, the inner magnet a of the first magnet array 08 will emit excess magnetic field lines outward. Similarly, the total magnetic flux of the inner magnet a of the second magnet array 022 is greater than the total magnetic flux of the outer magnet b of the first magnet array 08. At this time, the inner magnet a of the second magnet array 022 will emit excess magnetic field lines outward, thereby promoting the coupling of the second plasma with the first plasma and increasing the coupling efficiency between the second plasma and the first plasma.

[0105] In another embodiment of this application, the ion source device 03 further includes:

[0106] The cathode section includes a cathode housing 032 and a central cathode 033 located inside the cathode housing 032. An opening 031 of the ion source device 03 is provided between the cathode housing 032 and the central cathode 033. The cathode section is grounded, and the anode section is located between the cathode housing 032 and the central cathode 033.

[0107] The anode section also includes:

[0108] A first magnetic yoke 034, and a first magnet array 08 is provided on one side of the first magnetic yoke 034;

[0109] The water-cooled base 035 is located on the side of the first magnetic yoke 034 away from the first magnet array 08. The water-cooled base 035 has a water inlet 0351 and a water outlet 0352.

[0110] Insulating pad 036 is located on the side of water-cooled base 035 away from the first magnetic yoke 034;

[0111] The anode housing 037, the first magnetic yoke 034 and the first magnet array 08 are located between the anode housing 037 and the water-cooled base 035.

[0112] Specifically, the anode section also includes a first magnetic yoke 034, a water-cooled base 035, an insulating pad 036, and an anode shell 037.

[0113] Among them, a first magnet array 08 is provided on one side of the first magnetic yoke 034. The first magnetic yoke 034 is used to provide a closed-loop magnetic circuit, optimize the magnetic field distribution, strengthen plasma confinement, and reduce magnetic field leakage.

[0114] The water-cooled base 035 is located on the side of the first magnetic yoke 034 away from the first magnet array 08. It is provided with a water inlet 0351 and a water outlet 0352. Cooling water enters from the water inlet 0351, circulates through the internal water channel, and flows out from the water outlet 0352. During the coating process, the water inlet 0351 and the water outlet 0352 form a circulating water cooling system to cool the entire ion source device 03 and achieve a high-efficiency heat exchange effect.

[0115] The insulating pad 036 is located on the side of the water-cooled base 035 away from the first magnetic yoke 034, and is used to achieve electrical isolation between the anode part and other metal parts of the equipment to avoid short circuits.

[0116] In addition, the enclosed cavity formed by the anode housing 037 and the water-cooled base 035 houses the first magnetic yoke 034 and the first magnet array 08, which can protect the first magnetic yoke 034 and the first magnet array 08 from damage.

[0117] The ion source device 03 also includes a cathode section, which comprises a cathode housing 032 and a central cathode 033 located inside the cathode housing 032. An opening 031 of the ion source device 03 is provided between the cathode housing 032 and the central cathode 033, forming a semi-enclosed chamber that can house and protect the anode section. The cathode section also includes all grounded components of the ion source device 03.

[0118] It should be noted that when the first radio frequency power supply 05 and the first DC power supply 07 are connected to the ion source device 03, they can be connected through the bellows 10. The bellows 10 can maintain a high vacuum environment while compensating for equipment assembly errors, thermal expansion deformation or displacement of moving parts, and avoid structural stress, sealing failure or process interruption caused by rigid connection.

[0119] In this embodiment, the arrangement of the cathode and anode portions can constrain the first plasma generated on the opening 031 side of the ion source device 03, further increasing the plasma coupling efficiency.

[0120] In another embodiment of this application, reference is made to Figure 3 , Figure 3 This application provides a schematic diagram of a thin film deposition system with a baffle; the thin film deposition system further includes:

[0121] The baffle 11 is located on the side of the carrier plate 01 near the ion source device 03, and at least exposes the orthogonal projection area of ​​the magnetron cathode 02 on the carrier plate 01.

[0122] Specifically, in this embodiment, the baffle 11 is located on the side of the carrier plate 01 closest to the ion source device 03, and at least exposes the orthogonal projection area of ​​the magnetron cathode 02 on the carrier plate 01. In this case, when the substrate to be coated moves on the carrier plate 01 from the ion source device 03 side to the magnetron cathode 02 side, premature coating of the substrate can be avoided, reducing coating errors and ensuring uniform film thickness on the substrate.

[0123] In another embodiment of this application, the angle between the orientation of the opening 031 and the carrier plate 01 is in the range of -15° to 15°.

[0124] Specifically, the angle between the opening 031 of the ion source device 03 and the carrier plate 01 can be in the range of -15° to 15°, including the endpoint value. For example, the angle between the opening 031 of the ion source device 03 and the carrier plate 01 can be -15°, or the angle between the opening 031 of the ion source device 03 and the carrier plate 01 can be 0°, or the angle between the opening 031 of the ion source device 03 and the carrier plate 01 can be 3°. There is no specific limitation, and it can be set as needed.

[0125] In another embodiment of this application, a thin film deposition control method is also provided, referring to... Figure 4 , Figure 4 A schematic flowchart of a thin film deposition control method provided in this application embodiment; the thin film deposition system used in the above-mentioned method includes:

[0126] S10: Turn on the first radio frequency power supply 05 to make the ion source device 03 generate the first plasma;

[0127] S20: Turn on the first DC power supply 07 and control the first plasma to move toward the magnetron cathode 02;

[0128] S30: Turn on the second DC power supply 06 to generate a second plasma in the magnetron cathode 02. The second plasma couples with the first plasma to bombard the target material 021 of the magnetron cathode 02, causing the target material 021 ions generated by the bombardment to be deposited on one side of the substrate to be coated on the carrier plate 01.

[0129] Specifically, preparatory work can be carried out before depositing the thin film. After the preparatory work is completed, the first radio frequency power supply 05 is turned on, and the ion source device 03 is powered on to generate the first plasma.

[0130] Then, the first DC power supply 07 is turned on. The first DC power supply 07 can adopt the pulsed DC constant voltage mode. The positive terminal of the first DC power supply 07 is connected to the ion source device 03 through the filter 071, and the negative terminal of the first DC power supply 07 is grounded, thereby pushing the first plasma toward the magnetron cathode 02.

[0131] Then, the second DC power supply 06 is turned on. The negative terminal of the second DC power supply 06 is connected to the magnetron cathode 02, and the positive terminal of the second DC power supply 06 is grounded. At this time, the second DC power supply 06 controls the magnetron cathode 02 to generate the second plasma.

[0132] During the coupling process between the second plasma and the first plasma, secondary electrons are generated. These secondary electrons can be captured by the magnetron cathode 02 and collide with the ionized gas multiple times, generating the "avalanche effect" of the plasma. The plasma bombards the target material 021 of the magnetron cathode 02, causing the target material 021 ions generated by the bombardment to be deposited on one side of the substrate to be coated on the carrier plate 01, thereby forming a thin film on the substrate to be coated.

[0133] Because the plasma density within the system is significantly increased, i.e., the plasma ionization efficiency is significantly improved, thereby reducing the discharge impedance and further reducing the sputtering voltage, when coating the substrate to be coated on the carrier plate 01, the problem of magnetron sputtering damage is reduced due to the lower voltage.

[0134] Furthermore, in another embodiment, reference Figure 5 , Figure 5A schematic flowchart of another thin film deposition control method provided in this application embodiment; after turning on the first RF power supply 05, the second DC power supply 06 is turned on first, and finally the first DC power supply 07 is turned on, as follows:

[0135] S10: Turn on the first radio frequency power supply 05 to make the ion source device 03 generate the first plasma;

[0136] S20: Turn on the second DC power supply 06 to generate the second plasma from the magnetron cathode 02;

[0137] S30: Turn on the first DC power supply 07, control the first plasma to move towards the magnetron cathode 02, the second plasma couples with the first plasma, bombard the target material 021 of the magnetron cathode 02, so that the target material 021 ions generated by the bombardment are deposited on one side of the substrate to be coated on the carrier plate 01.

[0138] Or, refer to Figure 6 , Figure 6 This is a schematic flowchart of another thin film deposition control method provided in an embodiment of this application; first, the second DC power supply 06 is turned on, and then the first RF power supply 05 and the first DC power supply 07 are turned on in sequence, as follows:

[0139] S10: Turn on the second DC power supply 06 to generate the second plasma from the magnetron cathode 02;

[0140] S20: Turn on the first radio frequency power supply 05 to make the ion source device 03 generate the first plasma;

[0141] S30: Turn on the first DC power supply 07, control the first plasma to move towards the magnetron cathode 02, the second plasma couples with the first plasma, bombard the target material 021 of the magnetron cathode 02, so that the target material 021 ions generated by the bombardment are deposited on one side of the substrate to be coated on the carrier plate 01.

[0142] The above-described implementation methods can achieve the same effect, and will not be further explained here.

[0143] In another embodiment of this application, before generating plasma, that is, before turning on the first radio frequency power supply 05 to generate the first plasma and turning on the second DC power supply 06 to generate the second plasma, the method further includes:

[0144] Evacuate vacuum chamber 04 to low pressure;

[0145] Discharge gas, including inert gas and reactive gas, is introduced into vacuum chamber 04.

[0146] Specifically, before performing thin film deposition, the pump unit of vacuum chamber 04 can be turned on to pump vacuum chamber 04 to a low pressure.

[0147] Then, a discharge gas is introduced into the vacuum chamber 04. This discharge gas can be an inert gas or a reactive gas. During the coating process, the discharge gas will ionize to form plasma, which facilitates subsequent coating.

[0148] In another embodiment of this application, the control signals of the first radio frequency power supply 05 and the second DC power supply 06 are synchronously controlled;

[0149] The control signals for the first RF power supply 05 and the second DC power supply 06 are pulse signals and / or arc signals.

[0150] Specifically, a control device can be used to achieve synchronous control of control signals through an algorithm. Synchronous control of control signals means synchronous control of pulse signals and / or arc signals.

[0151] The control signals of the second DC power supply 06 and the first RF power supply 05 can be controlled synchronously. At this time, the control device can be electrically connected to the first RF power supply 05 and the second DC power supply 06, so that the arc signal and / or pulse signal of the second DC power supply 06 and the first RF power supply 05 are synchronized. That is, the second DC power supply 06 and the first RF power supply 05 are switched on and off at the same time to ensure that the second plasma is coupled to the first plasma.

[0152] In another embodiment of this application, when the charge accumulation on the target material 021 and the substrate to be coated cannot be neutralized, the first radio frequency power supply 05 and the second DC power supply 06 are controlled to be turned off synchronously.

[0153] Specifically, since the rate of charge generation in the vacuum chamber 04 is greater than the rate of neutralization, there may be an arc risk. At this time, the first RF power supply 05 and the second DC power supply 06 can be controlled to be turned off synchronously, which eliminates the arc risk, stabilizes the discharge process, and improves the product yield.

[0154] In the description of this specification, references to terms such as "some embodiments," "another embodiment," etc., indicate that a specific feature, structure, material, or characteristic described in connection with that embodiment or example is included in at least one embodiment or example of the invention. In this specification, the illustrative descriptions of the above terms do not necessarily refer to the same embodiments or examples.

[0155] The technical features of the above embodiments can be combined in any way. For the sake of brevity, not all possible combinations of the technical features of the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0156] The embodiments described above are merely illustrative of several implementation methods of this application, and while the descriptions are relatively specific and detailed, they should not be construed as limiting the scope of the patent application. It should be noted that those skilled in the art can make various modifications and improvements without departing from the concept of this application, and these all fall within the protection scope of this application. Therefore, the protection scope of this patent application should be determined by the appended claims.

Claims

1. A thin film deposition system, characterized in that, include: Carrier plate, used to hold the substrate to be coated; A magnetron cathode is located on one side of the carrier plate; An ion source device and a magnetron cathode are located on the same side of the carrier plate, and the ion source device and the magnetron cathode are arranged sequentially along a first direction, which is parallel to the carrier plate. The ion source device has an opening, a first plasma is generated on the side of the opening, and a second plasma is generated by the magnetron cathode. The opening of the ion source device faces the magnetron cathode.

2. The thin film deposition system according to claim 1, characterized in that, The thin film deposition system further includes: A first radio frequency power supply, connected to the ion source device, is used to control the ion source device to generate the first plasma; A first DC power supply, the positive terminal of which is connected to the ion source device, and the negative terminal of which is grounded, are used to push the first plasma toward the magnetron cathode. A second DC power supply, the negative terminal of which is connected to the magnetron cathode, and the positive terminal of which is grounded, are used to control the magnetron cathode to generate the second plasma.

3. The thin film deposition system according to claim 2, characterized in that, The thin film deposition system further includes: A filter is located between the first DC power supply and the ion source device; The control device is electrically connected to the first radio frequency power supply and the second DC power supply to achieve synchronization of the arc signal and / or pulse signal of the first radio frequency power supply and the second DC power supply.

4. The thin film deposition system according to claim 1, characterized in that, The ion source device includes an anode section, and the anode section includes a first magnet array; The magnetron cathode includes a target and a magnetic rod, and the magnetic rod includes a second magnet array; The first magnet array and the second magnet array each include an inner magnet and an outer magnet, respectively; The magnetic poles of the inner magnets of the first magnet array are opposite to those of the inner magnets of the second magnet array; the magnetic poles of the outer magnets of the first magnet array are opposite to those of the outer magnets of the second magnet array.

5. The thin film deposition system according to claim 4, characterized in that, The total magnetic flux of the inner magnets in the first magnet array is greater than the total magnetic flux of the outer magnets in the first magnet array. The total magnetic flux of the inner magnets in the second magnet array is greater than the total magnetic flux of the outer magnets in the second magnet array.

6. The thin film deposition system according to claim 4, characterized in that, The ion source device further includes: The cathode portion includes a cathode housing and a central cathode located inside the cathode housing. The opening of the ion source device is located between the cathode housing and the central cathode. The cathode portion is grounded, and the anode portion is located between the cathode housing and the central cathode. The anode portion further includes: A first magnetic yoke, wherein the first magnetic array is disposed on one side of the first magnetic yoke; A water-cooled base is located on the side of the first magnetic yoke away from the first magnet array, and the water-cooled base has a water inlet and a water outlet; An insulating pad is located on the side of the water-cooled base away from the first magnetic yoke; The anode housing, the first magnetic yoke and the first magnet array are located between the anode housing and the water-cooled base.

7. The thin film deposition system according to claim 1, characterized in that, The thin film deposition system further includes: A baffle is located on the side of the carrier plate closer to the ion source device, and at least exposes the orthogonal projection area of ​​the magnetron cathode on the carrier plate.

8. The thin film deposition system according to claim 1, characterized in that, The angle between the orientation of the opening and the carrier plate is in the range of -15° to 15°.

9. A method for controlling thin film deposition, characterized in that, The thin film deposition system according to claims 1-8 includes: Turn on the first radio frequency power supply to generate the first plasma from the ion source device; Turn on the first DC power supply and control the first plasma to move toward the magnetron cathode; Turn on the second DC power supply to generate the second plasma from the magnetron cathode; The second plasma is coupled with the first plasma to bombard the target material of the magnetron cathode, causing the target material ions generated by the bombardment to be deposited on one side of the substrate to be coated on the carrier plate.

10. The thin film deposition control method according to claim 9, characterized in that, Before plasma generation, the following is also included: The vacuum chamber is evacuated to a low pressure; a discharge gas, including an inert gas and a reactive gas, is introduced into the vacuum chamber.

11. The thin film deposition control method according to claim 9, characterized in that, The control signals of the first radio frequency power supply and the second DC power supply are synchronously controlled. The control signals for the first radio frequency power supply and the second DC power supply are arc signals and / or pulse signals.

12. The thin film deposition control method according to claim 9, characterized in that, When the charge accumulation on the target material and the substrate to be coated cannot be neutralized, the first radio frequency power supply and the second DC power supply are controlled to be turned off synchronously.

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