Method for leveling contact surface of contact point, and device having contact point
By using the methods of pressing and tapping, the problem of difficult-to-reduce surface roughness at the contact points was solved, achieving efficient and low-cost surface smoothing and improving the reliability and current carrying capacity of the contact interface.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- SHENZHEN TSIMEC CO LTD
- Filing Date
- 2024-10-30
- Publication Date
- 2026-05-01
AI Technical Summary
Existing technologies are unable to efficiently reduce the surface roughness of device contact areas, resulting in multi-peak contact states that affect interface reliability and current carrying capacity. Furthermore, laser beam shaping methods are inefficient.
The contact area surface is tapped and pressed using a pressure block. The yield strength of the pressure block is greater than that of the surface to be flattened. A pressure of 50MPa to 600MPa is applied, and the roughness of the target surface is less than that of the surface to be flattened. Combined with optional heating and current treatment, the surface roughness is reduced.
It significantly reduces the roughness of the contact surface, improves flatness, increases processing efficiency, reduces costs, and decreases contact resistance.
Smart Images
Figure CN121948366A_ABST
Abstract
Description
Technical Field
[0001] This application relates to the field of surface treatment, and in particular to a method for smoothing the contact surface of a contact area and a device having a contact area. Background Technology
[0002] The contact areas of devices are very small, typically within 10 micrometers, making their fabrication challenging. Furthermore, from a microscopic perspective, the surfaces of the contact areas after fabrication still exhibit rough peaks at the micrometer or tens of nanometer levels. When in contact with other parts, this results in a multi-peak contact interface, with the effective contact area between the two parts usually less than 0.5%. For example, the curved metal contacts of RF MEMS (Radio Frequency Micro-Electro-Mechanical System) switches, when fabricated using physical vapor deposition, have a surface roughness Ra of 6 nm to 10 nm, and a height difference between peaks and valleys of 15 nm to 80 nm.
[0003] Incomplete contact in multi-peaked interfaces can cause localized thermal effects, partial discharges, and stress concentrations, severely impacting the reliability and current-carrying capacity of the interface. To reduce surface roughness, laser beam shaping is currently used for planarization, yielding micron- and nanometer-scale surfaces. However, this method requires highly sophisticated equipment and has very low processing speed and efficiency.
[0004] Therefore, how to solve the above-mentioned technical problems should be a key focus for those skilled in the art. Summary of the Invention
[0005] The purpose of this application is to provide a method for flattening the contact surface of a contact area, a device having a contact area, to reduce the difficulty of flattening and improve processing efficiency.
[0006] To solve the above-mentioned technical problems, this application provides a method for smoothing the contact surface of a contact area, comprising:
[0007] Prepare a pressing block; the yield strength of the pressing block is greater than the yield strength of the contact surface to be flattened on the contact part, and the roughness of the target surface of the pressing block is less than the target roughness;
[0008] The pressure block is used to pat and press the contact surface to be flattened, thereby reducing the roughness of the contact surface to the target roughness.
[0009] During the patting and pressing, the target surface comes into contact with the surface to be leveled. The size of the surface to be leveled is within 10μm×10μm, the size of the pressing block is within 1mm, and the applied pressure range is 50MPa~600MPa.
[0010] Optionally, before using the pressure block to tap and press the contact surface to be flattened, the method further includes:
[0011] The contact surface to be leveled is heated.
[0012] Optionally, when the material of the contact area is a metallic material, heating the contact surface to be flattened includes:
[0013] The contact area is energized to raise the temperature of the contact surface to be leveled.
[0014] Optionally, when the contact portion is energized, the energizing current ranges from 50mA to 150mA, and the energizing time is within 20 seconds.
[0015] Optionally, when the surface to be leveled is curved and the target surface is flat, using the pressure block to tap and press the surface to be leveled includes:
[0016] The top of the contact surface to be flattened is tapped and pressed using the target surface of the pressure block. Optionally, when the contact surface to be flattened is curved, the target surface is also curved.
[0017] Optionally, the target surface of the compact is an atomically flat surface or a nanoscale flat surface.
[0018] Optionally, the pressing block is a two-dimensional material pressing block.
[0019] Optionally, the pressing block includes a two-dimensional material pressing block and a medium pressing block stacked together.
[0020] This application also provides a device having a contact portion, wherein the contact surface of the contact portion of the device is treated by any of the methods described above for flattening the contact surface of the contact portion.
[0021] This application provides a method for smoothing the contact surface of a contact area, comprising: preparing a pressure block; the yield strength of the pressure block is greater than the yield strength of the contact surface to be smoothed on the contact area, and the roughness of the target surface of the pressure block is less than the target roughness; using the pressure block to pat and press the contact surface to be smoothed, flattening the contact surface to be smoothed, so that the roughness of the contact surface to be smoothed is reduced to the target roughness; wherein, during patting and pressing, the target surface is in contact with the contact surface to be smoothed, the size of the contact surface to be smoothed is within 10μm×10μm, the size of the pressure block is within 1mm, and the applied pressure range is 50MPa~600MPa.
[0022] As can be seen, the leveling method in this application utilizes a pressure block to pat and press the contact surface to be leveled. The pressure block reduces the surface roughness, thereby improving the smoothness of the contact surface. The yield strength of the pressure block is greater than that of the contact surface, causing uneven protrusions on the surface to be leveled to be flattened through plastic deformation. A single press of the pressure block can process surfaces at the micrometer scale, resulting in higher processing efficiency. Furthermore, the method is simple and low-cost.
[0023] In addition, this application also provides a device with a contact portion having the above-mentioned advantages. Attached Figure Description
[0024] To more clearly illustrate the technical solutions of the embodiments of this application or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.
[0025] Figure 1 The flowchart of a method for smoothing the contact surface of a contact area provided in this application embodiment. Figure 1 ;
[0026] Figure 2 The flowchart of a method for smoothing the contact surface of a contact area provided in this application embodiment. Figure 2 ;
[0027] Figure 3 This is a schematic diagram illustrating the principle of a method for smoothing the contact surface of a contact area according to an embodiment of this application.
[0028] Figure 4 and Figure 5 This is a schematic diagram comparing the roughness of the flattened and non-flattened areas on the contact surface to be flattened, provided in an embodiment of this application.
[0029] Figure 6 and Figure 7 This is a schematic diagram representing the roughness of the contact surface to be flattened before being patted and pressed.
[0030] Figure 8 and Figure 9 Characterization diagram of the roughness of the contact surface to be leveled after being patted and pressed using the leveling method of this application;
[0031] Figure 10 and Figure 11 This is a schematic diagram representing the roughness of the contact surface to be flattened before being patted and pressed.
[0032] Figure 12 and Figure 13 Characterization diagram of the roughness of the contact surface to be leveled after being patted and pressed using the leveling method of this application. Detailed Implementation
[0033] To enable those skilled in the art to better understand the present application, the present application will be further described in detail below with reference to the accompanying drawings and specific embodiments. Obviously, the described embodiments are merely some embodiments of the present application, and not all embodiments. Based on the embodiments in this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application.
[0034] Many specific details are set forth in the following description in order to provide a full understanding of the invention. However, the invention may also be practiced in other ways different from those described herein, and those skilled in the art can make similar extensions without departing from the spirit of the invention. Therefore, the invention is not limited to the specific embodiments disclosed below.
[0035] As described in the background section, the current method of surface smoothing is achieved using laser beam shaping, which requires highly sophisticated equipment and has very low processing speed and efficiency.
[0036] In view of this, this application provides a method for smoothing the contact surface of the contact area, please refer to... Figure 1 ,include:
[0037] Step S101: Prepare a pressing block; the yield strength of the pressing block is greater than the yield strength of the contact surface to be flattened on the contact part, and the roughness of the target surface of the pressing block is less than the target roughness.
[0038] The target roughness is the roughness achieved by the contact surface to be leveled after leveling treatment.
[0039] The purpose of having a yield strength greater than that of the contact surface to be flattened is to allow the uneven protrusions on the contact surface to be flattened to undergo plastic deformation under the mechanical tapping and pressing of the pressure block, thereby making them flat.
[0040] The material of the contact area can be a metallic material, such as gold, silver, copper, nickel, platinum, aluminum, etc., or it can be an insulating material, such as silicon oxide, silicon nitride, hafnium oxide, silicon, silicon nitride, etc. The hardness of the briquetting material is greater than the hardness of the contact area material. The specific briquetting material can be selected based on the material of the contact area, and no specific limitation is made in this application.
[0041] The contact surface to be flattened at the contact point can be either a plane or a curved surface; this embodiment does not impose any limitation on either. The target surface of the pressing block can also be either a plane or a curved surface; this embodiment does not impose any limitation on either.
[0042] When the contact surface to be leveled is a plane, the target surface of the pressure block can be a plane. When the contact surface to be leveled is a curved surface, the target surface of the pressure block can be either a plane or a curved surface.
[0043] To facilitate subsequent operations, the pressure block can be fixed to the pressure rod, which can be a probe, to tap and press the flat contact surface.
[0044] Step S102: Use the pressure block to pat and press the contact surface to be leveled, flatten the contact surface to be leveled, and reduce the roughness of the contact surface to the target roughness; wherein, when patting and pressing, the target surface is in contact with the contact surface to be leveled, the size of the contact surface to be leveled is within 10μm×10μm, the size of the pressure block is within 1mm, and the applied pressure range is 50MPa~600MPa.
[0045] By adjusting the displacement of the pressure block, different positions on the flat contact surface can be flattened. The moving speed is not limited in this embodiment.
[0046] When using a pressure block to pat and press the contact surface to be flattened, the pressure range can be 50MPa~600MPa, such as 50MPa, 100MPa, 200MPa, 300MPa, 400MPa, 500MPa, 600MPa, etc., to ensure that the contact surface to be flattened is flattened while avoiding damage to the pressure block and the contact surface to be flattened.
[0047] The leveling method in this embodiment utilizes a pressure block to pat and press the contact surface to be leveled. The pressure block reduces the surface roughness, thereby improving the smoothness of the contact surface. The yield strength of the pressure block is greater than that of the contact surface, causing uneven protrusions on the surface to be leveled to be flattened through plastic deformation. A single press of the pressure block can process surfaces at the micrometer scale, resulting in higher processing efficiency. Furthermore, the method is simple and low-cost.
[0048] Based on the above embodiments, in one embodiment of this application, please refer to Figure 2 Methods for smoothing the contact surface of the contact area include:
[0049] Step S201: Prepare a pressing block; the yield strength of the pressing block is greater than the yield strength of the contact surface to be flattened on the contact part, and the roughness of the target surface of the pressing block is less than the target roughness.
[0050] Step S202: Heat the contact surface to be flattened.
[0051] The purpose of heating the contact surface to be flattened is to reduce the yield stress of the contact components. Also, the uneven protrusions on the contact surface to be flattened tend to accumulate more heat, making them easier to flatten under patting and pressing, thus improving the flattening effect.
[0052] It should be noted that the heating method is not limited in this embodiment and depends on the situation.
[0053] As one possible implementation, when the material of the contact portion is a metallic material, heating the contact surface to be flattened includes:
[0054] The contact area is energized to raise the temperature of the contact surface to be leveled.
[0055] When an electric current is applied to the metallic material, it exhibits a resistance heating effect, thereby increasing its temperature. When the contact area is energized, the current range can be 50mA to 150mA, and the energizing time can be within 20 seconds. For example, the current can be 50mA, 80mA, 100mA, 120mA, 150mA, etc., and the energizing time can be 20 seconds, 15 seconds, 10 seconds, 5 seconds, etc.
[0056] By controlling the current to 50mA~150mA and the energizing time to within 20 seconds, energizing can be achieved, allowing the surface to be flattened to heat up, while avoiding excessive heat that could damage the contact components.
[0057] As another possible implementation method, the contact area can be placed in an environment with a certain temperature to achieve heating.
[0058] Step S203: Use the pressure block to pat and press the contact surface to be leveled, flatten the contact surface to be leveled, and reduce the roughness of the contact surface to the target roughness; wherein, when patting and pressing, the target surface is in contact with the contact surface to be leveled, the size of the contact surface to be leveled is within 10μm×10μm, the size of the pressure block is within 1mm, and the applied pressure range is 50MPa~600MPa.
[0059] To improve the flattening effect of the pressure block on the flat surface, the flat contact surface can be patted and pressed while heating.
[0060] Based on any of the above embodiments, in one embodiment of this application, when the contact surface to be leveled is a curved surface and the target surface is a plane, using the pressure block to pat and press the contact surface to be leveled includes:
[0061] The top of the contact surface to be flattened is tapped and pressed using the target surface of the pressure block.
[0062] When the contact surface to be flattened is curved, under normal circumstances, a pressure block is used to directly tap and press the top of the contact surface to be flattened so that there are no burrs or other protrusions on the top surface. This will make the contact surface meet the needs of most scenarios. The operation is simple and easy.
[0063] Based on any of the above embodiments, in one embodiment of this application, when the contact surface to be flattened is a curved surface, the target surface is also a curved surface. The curved surface of the target surface matches the curved surface of the contact surface to be flattened, ensuring good contact between the target surface of the pressing block and the contact surface to be flattened during tapping and pressing, thus achieving a flattening effect.
[0064] In this embodiment, when the contact surface to be flattened is curved, the target surface of the pressing block is also set to curved, so that the angle of the target surface does not need to be adjusted when patting and pressing, simplifying the operation.
[0065] In order to reduce the roughness of the contact surface to be leveled and improve the flatness of the contact surface to be leveled, based on any of the above embodiments, in one embodiment of this application, the target surface of the pressing block is an atomically flat surface or a nanoscale flat surface.
[0066] As one possible implementation, the pressing block is a two-dimensional material pressing block, and the surface of the two-dimensional material is an atomically smooth surface with a roughness of less than 0.3 nanometers.
[0067] As another possible implementation, the pressing block includes a two-dimensional material pressing block and a medium pressing block stacked together.
[0068] This application does not limit the material of the media pressing block; it can be a non-two-dimensional material or a two-dimensional material.
[0069] Two-dimensional material briquettes include, but are not limited to, graphite briquettes, graphene briquettes, highly oriented pyrolytic graphite (HOPG) briquettes, molybdenum disulfide briquettes, and tungsten diselenide briquettes.
[0070] The effects achieved by using the leveling method of this application are described below.
[0071] like Figure 3 As shown, the contact surface 2 to be flattened at the contact point is curved, while the target surface of the pressure block 1 is flat. The pressure block 1 is fixedly connected to the pressure rod 3, and the pressure block 2 is used to tap and press the contact surface 2 to be flattened. After flattening, the contact surface to be flattened at the contact point is as follows: Figure 4 and Figure 5 As shown, through Figure 4 and Figure 5 It can be seen that the roughness of the flattened area of the contact surface to be flattened is significantly reduced compared to the non-flattened area, and the surface of the flattened area is smoother.
[0072] Leveling treatment example 1: Use a pressure block to tap the contact area to be leveled.
[0073] The roughness characterization before patting and pressing is as follows: Figure 6 and Figure 7 As shown, Figure 7 for Figure 6 The graph shows the height curve of the contact surface to be leveled in the area shown. The horizontal axis represents the distance from the origin (0,0), and the vertical axis represents the height. Figure 6 and Figure 7 It can be seen that the average roughness of the contact surface to be flattened before flattening is 3.566 nanometers, and the height difference Δh between the peaks and valleys on the contact surface to be flattened is 16 nanometers.
[0074] The roughness characterization after patting and pressing is as follows: Figure 8 and Figure 9 As shown, Figure 9 for Figure 8 The diagram shows the height curve of the contact surface to be leveled in the indicated area. The horizontal axis represents the distance from the origin, and the vertical axis represents the height. Figure 8 and Figure 9 It can be seen that after being patted and pressed, the average roughness of the contact surface to be flattened is 2.126 nanometers, and the height difference Δh between the peaks and valleys on the contact surface to be flattened is 5 nanometers.
[0075] Leveling treatment example 2: Use a pressure block to tap the contact area to be leveled on the contact surface and apply a 50mA current to the contact surface to be leveled while tapping.
[0076] Characterization of roughness before tapping, as follows Figure 10 and Figure 11 As shown, Figure 11 for Figure 10 The diagram shows the height curve of the contact surface to be leveled in the indicated area. The horizontal axis represents the distance from the origin, and the vertical axis represents the height. Figure 10 and Figure 11 It can be seen that the average roughness of the contact surface to be flattened before flattening is 3.644 nanometers, and the height difference Δh between the peaks and valleys on the contact surface to be flattened is 16 nanometers.
[0077] The roughness characterization after applying current and tapping / pressing is as follows: Figure 12 and Figure 13 As shown, Figure 13 for Figure 12 The diagram shows the height curve of the contact surface to be leveled in the indicated area. The horizontal axis represents the distance from the origin, and the vertical axis represents the height. Figure 12 and Figure 13 As shown. After being patted and pressed, the average roughness of the contact surface to be leveled is 2.914 nanometers, and the height difference Δh between the peaks and valleys on the contact surface to be leveled is 7 nanometers.
[0078] As can be seen from the two sets of examples, Example 1 and Example 2, at 4µm 2 The "flattening" effect within the area is significant, with the roughness reduced by approximately two-thirds. Using the method described in this application, the roughness of the contact surface to be flattened can be reduced to the 1-2 nm level, and the peak-to-valley value can be reduced to below 10 nm.
[0079] The contact resistance of the flattened contact surface before and after tapping and pressing with a pressure block is shown in Table 1.
[0080] Table 1
[0081] Sample number Apply pressure (uN) before testing. Resistance R (Ω) before testing Pressure value applied during testing (uN) Resistance value R (Ω) after 10 minutes of pressing. 1 500 19.61 400 12.32 2 300 24.39 400 13.51 3 420 24.02 460 16.31
[0082] As shown in Table 1, the contact resistance of the flattened contact surface tends to decrease to some extent after being patted and pressed.
[0083] This application also provides a device having a contact portion, wherein the contact surface of the contact portion of the device is treated by the method for smoothing the contact surface of the contact portion as described in any of the above embodiments.
[0084] Devices with contact points can be RF MEMS switches, and the contact points can be the contacts in RF MEMS switches.
[0085] The various embodiments in this specification are described in a progressive manner. Each embodiment focuses on the differences from other embodiments. The same or similar parts between the various embodiments can be referred to each other.
[0086] The method for smoothing the contact surface of contact areas and the device having contact areas provided in this application have been described in detail above. Specific examples have been used to illustrate the principles and implementation methods of this application. The descriptions of the embodiments above are only for the purpose of helping to understand the solution and core ideas of this application. It should be noted that those skilled in the art can make several improvements and modifications to this application without departing from the principles of this application, and these improvements and modifications also fall within the protection scope of this application.
Claims
1. A method for smoothing the contact surface of a contact area, characterized in that, include: Prepare to press the blocks; The yield strength of the pressing block is greater than the yield strength of the contact surface to be flattened at the contact point, and the roughness of the target surface of the pressing block is less than the target roughness. The pressure block is used to pat and press the contact surface to be flattened, thereby reducing the roughness of the contact surface to the target roughness. During the patting and pressing, the target surface comes into contact with the surface to be leveled. The size of the surface to be leveled is within 10μm×10μm, the size of the pressing block is within 1mm, and the applied pressure range is 50MPa~600MPa.
2. The method for smoothing the contact surface of the contact area as described in claim 1, characterized in that, Before using the pressure block to tap and press the contact surface to be flattened, the process further includes: The contact surface to be leveled is heated.
3. The method for smoothing the contact surface of the contact area as described in claim 2, characterized in that, When the material of the contact area is a metallic material, heating the contact surface to be flattened includes: The contact area is energized to raise the temperature of the contact surface to be leveled.
4. The method for smoothing the contact surface of the contact area as described in claim 3, characterized in that, When the contact part is energized, the current range is 50mA~150mA, and the energizing time is within 20 seconds.
5. The method for smoothing the contact surface of the contact area as described in claim 1, characterized in that, When the surface to be leveled is curved and the target surface is flat, using the pressure block to tap and press the surface to be leveled includes: The top of the contact surface to be flattened is tapped and pressed using the target surface of the pressure block.
6. The method for smoothing the contact surface of the contact area as described in claim 1, characterized in that, When the contact surface to be leveled is a curved surface, the target surface is a curved surface.
7. The method for smoothing the contact surface of the contact area as described in any one of claims 1 to 6, characterized in that, The target surface of the compact is an atomically flat surface or a nanoscale flat surface.
8. The method for smoothing the contact surface of the contact area as described in claim 7, characterized in that, The pressing block is a two-dimensional material pressing block.
9. The method for smoothing the contact surface of the contact area as described in claim 7, characterized in that, The pressing block includes two-dimensional material pressing blocks and medium pressing blocks stacked together.
10. A device having a contact portion, characterized in that, The contact surface of the contact portion of the device is treated by the method for smoothing the contact surface of the contact portion as described in any one of claims 1 to 9.