C-band solid-state power amplifier device based on gallium nitride technology

Abstract

The invention discloses C-band solid-state power amplifier equipment based on gallium nitride technology, which is provided with a C-band radio frequency pre-stage driver for receiving a radio frequency signal, the C-band radio frequency pre-stage driver outputs a driving signal to a final-stage power amplifier unit, the final-stage power amplifier unit outputs the radio frequency signal and a coupling signal outwards through a coupling detection unit, and the coupling detection unit is connected with the C-band radio frequency pre-stage driver. The combined detection unit outputs forward detection signals and reverse detection signals to the monitoring processing unit, the C-band radio frequency preceding-stage driver outputs temperature and current parameters to the monitoring processing unit, and the monitoring processing unit and the power supply unit exchange data information. And the power supply unit comprises a C-band radio frequency preceding-stage driver, a final-stage power amplifier unit and a coupling detection unit. The C-band 2000W solid-state power amplifier based on the gallium nitride technology has very high stability, system redundancy and maintainability, and can support long-time work.

Description

Technical Field

[0001] This invention relates to the field of satellite communication ground station telemetry and control technology, specifically to a 2000W C-band solid-state power amplifier based on gallium nitride technology, which can be used in satellite communication ground station telemetry and control transmission equipment. Background Technology

[0002] Power amplifiers are one of the core components of satellite communication launch systems. With the continuous development of semiconductor materials and processes, solid-state power devices, with their advantages of wider operating bandwidth, higher reliability, larger safety factor, and longer lifespan, are finding increasingly widespread applications in radar, communication, and telemetry. Furthermore, with the continuous advancement of technologies such as aerospace telemetry, satellite communication, and broadcasting, the demand for high-linearity power amplifiers is increasing.

[0003] For a long time, traveling wave tube (TWT) power amplifiers have dominated the high-power amplifier market due to their high output power, wide operating bandwidth, and high efficiency. However, compared with solid-state power amplifiers, TWT amplifiers have a shorter mean time between failures (MTBF), higher operating voltage, and lower reliability and stability. With the rapid development of third-generation semiconductor gallium nitride (GaN) technology, compared with traditional second-generation semiconductor devices based on gallium arsenide (GaAs), GaN power devices have the advantages of high output power, high efficiency, wide bandwidth, and high temperature resistance, leading to their increasing applications and making them one of the most important frontiers in contemporary power semiconductor technology.

[0004] In recent years, with the maturation of GaN devices, solid-state devices have achieved significant advancements in both power and efficiency per tube. Currently, GaN power devices, combined with various efficient solid-state power combining technologies, can realize kW-level microwave and millimeter-wave solid-state power amplifiers. With the maturation of these technologies, many high-power devices in China, including ground-based, airborne, and shipborne systems, are gradually replacing traditional traveling wave tube amplifiers.

[0005] For example, the patent document with authorization announcement number CN 101930886A, publication date December 29, 2010, and titled "A Dual-Mode Gyrotron Traveling Wave Tube Amplifier," discloses a traveling wave tube amplifier with a two-stage structure. The first stage is a linear amplification stage, employing a loss-loaded metal waveguide and operating in low-order modes. The second stage is a nonlinear amplification stage, employing a smooth metal waveguide and operating in high-order modes. The linear amplification stage provides high gain for the amplifier, while the nonlinear amplification stage provides high power.

[0006] Traditional microwave and millimeter-wave power amplifiers in the kW range, which use traveling wave tube amplifiers, can output high power, but the power amplifiers are complex and require a lot of power supply and vacuum components, making heterogeneous integration difficult. With the improvement of communication and measurement and control technology, power amplifiers can no longer meet the new requirements of high power, high efficiency, wide bandwidth and high temperature resistance. Power amplifiers are gradually developing towards modular design. Summary of the Invention

[0007] The technical problem to be solved by this invention is to realize a 2000W C-band solid-state power amplifier based on gallium nitride (GaN) technology. It employs a waveguide synthesizer combining HT and ET to combine four GaN power chips to output 400W. Then, eight C-band 400W power amplifiers are combined through an eight-path directional synthesis. Within the required operating frequency band of 5.85–6.425 GHz, the solid-state power amplifier can achieve a continuous wave output power of 2000W. This 2000W C-band solid-state power amplifier based on GaN technology features high power, high efficiency, wide bandwidth, high temperature resistance, high reliability, modularity, and low cost, meeting the needs of satellite communication and telemetry equipment.

[0008] To achieve the above objectives, the technical solution adopted by the present invention is as follows: a C-band solid-state power amplifier device based on gallium nitride technology, the device having a C-band RF pre-amplifier driver for receiving RF signals, the C-band RF pre-amplifier driver outputting a drive signal to a final stage power amplifier unit, the final stage power amplifier unit outputting RF signals and coupled signals to a coupled detector unit via a coupled detector unit, the coupled detector unit outputting forward and reverse detector signals to a monitoring and processing unit, the C-band RF pre-amplifier driver outputting temperature and current parameters to the monitoring and processing unit, the monitoring and processing unit exchanging data information with a power supply unit, the power supply unit comprising a C-band RF pre-amplifier driver, a final stage power amplifier unit, and a coupled detector unit.

[0009] The C-band RF preamplifier consists of an isolator, an attenuator, a linearizer, and a driver amplifier connected in sequence. The isolator receives the RF input, and the driver amplifier outputs a signal to the final power amplifier unit. The C-band RF preamplifier operates in the frequency band of 5.800GHz to 6.75GHz, has an RF gain greater than 45dB, and an output power greater than 20 watts.

[0010] The final stage power amplifier unit receives the C-band RF preamplifier drive input signal from the 8-path power amplifier splitter and divides it into 8 independent isolators to send to the 400W power amplifier. Each of the 400W power amplifiers is sent to the input terminal of the 8-path power amplifier combiner via an independent isolator. One output of the 8-path power amplifier combiner is connected to the coupling detector unit.

[0011] The 400W power amplifier uses a waveguide synthesizer combining HT and ET to combine four gallium nitride power chips to output 400W. Each of the 400W power amplifiers has the same structure, consisting of a driver amplifier, a 4-channel power divider, four 120W single-card module amplifiers, a 4-channel combiner, and an isolator, arranged sequentially from input to output. The 400W power amplifier operates in the frequency band of 5.800GHz to 6.75GHz, has an RF gain greater than 25dB, and an output power greater than 400 watts.

[0012] The coupling detection unit is equipped with a coupling filter that receives input signals and outputs radio frequency signals. The coupling filter outputs positive detection to the monitoring and processing unit via a 2-power divider and a detector. The coupling filter also outputs reverse detection directly to the monitoring and processing unit via a detector. The other output of the 2-power divider outputs a coupling signal to the outside via an isolator.

[0013] The C-band solid-state power amplifier device has a mechanism in which a 400W power amplifier, a power supply unit, and a C-band RF preamplifier are arranged in a stacked manner inside the cabinet. The C-band solid-state power amplifier device operates in the frequency band of 5.8 to 6.75 GHz and has a maximum continuous wave output power of 2000W.

[0014] The 400W power amplifier, power supply unit, and C-band RF preamplifier are all installed in independent flat cuboid housings. The housings are in close contact with each other and filled with thermal grease. Each housing has heat dissipation holes at both ends and a cooling fan inside the housing. The housings are made of aluminum or copper, and air ducts are provided inside the housings between the heat dissipation holes.

[0015] The components inside the housing are fixed tightly against the heat dissipation base plate. The back of the heat dissipation base plate has heat dissipation fins extending into the air duct. The gaps between the heat dissipation fins extend in the same direction as the airflow within the air duct. The area of ​​each heat dissipation fin inside the housing is greater than or equal to 2.17 m². 2 The airflow of the cooling fan in full-wind mode is greater than or equal to 0.033 m³ / h. 3 / s, the exhaust direction of the cooling fan is towards the outside of the cabinet.

[0016] The heat dissipation base plate is coiled with pulsating heat pipes, the inside of which is filled with capillary material, and all the pulsating heat pipes are connected to a coolant circulation device.

[0017] The power supply unit consists of two 8000W power supplies. Each 8000W power supply outputs four 2000W power supplies to provide 400W of power. Each 8000W power supply consists of an AC-DC power module, a power filter, and a power heat sink.

[0018] This invention relates to a 2000W C-band solid-state power amplifier based on gallium nitride technology. It features very high stability, system redundancy, and maintainability, and can support long-term operation with a mean time between failures (MTBF) of ≥18000h and a mean time to repair (MTB) of less than 20min. When two or fewer power units fail, the overall output power of the amplifier decreases according to a certain pattern, and it can continue to support the system to complete its tasks under derating conditions.

[0019] The C-band 2000W solid-state power amplifier based on gallium nitride technology employs a monitoring and processing unit composed of an industrial computer and a server to control each power amplifier sub-module. The display refresh rate is ensured to be 1 refresh per second. The server-mounted database and website program are upgraded and maintained, with centralized log management supporting functions such as log retrieval, statistical analysis, and anomaly detection. It can achieve an "unattended, remote operation" working mode. Attached Figure Description

[0020] The following is a brief explanation of the content represented by each figure in this specification:

[0021] Figure 1 Block diagram of a 2000W C-band solid-state power amplifier system;

[0022] Figure 2 Layout diagram of a standard 19-inch rack enclosure for a 36U server;

[0023] Figure 3 Dimensions of an 8-path synthesis and power splitting network;

[0024] Figure 4 Design a block diagram for the power amplifier module's synthesis network;

[0025] Figure 5 Thermal simulation diagram of a 19-inch 3U chassis for a C-band 400W power amplifier;

[0026] Figure 6 Thermal simulation diagram of a 36U standard 19-inch rack. Detailed Implementation

[0027] The following description, with reference to the accompanying drawings, details the specific implementation of the present invention, including the shape and structure of each component, the relative positions and connections between the parts, the function and working principle of each part, the manufacturing process, and the operation and use methods, to help those skilled in the art to have a more complete, accurate, and in-depth understanding of the inventive concept and technical solution of the present invention.

[0028] Compared to the narrow bandwidth and low efficiency of traveling wave tube amplifiers, the main difference of gallium nitride (GaN)-based solid-state power amplifiers lies in the use of "multiple modules / boxes" and "GaN power chips," enabling "free combination." GaN power devices and modular design are an inevitable trend in the development of satellite communication ground station telemetry and control equipment, and GaN-based solid-state power amplifiers are one of the effective methods to improve modular design. GaN-based solid-state power amplifiers have advantages such as high power, high efficiency, wide bandwidth, and high temperature resistance. Commonly used power amplifier monitoring and processing systems do not have remote and unattended operation capabilities.

[0029] A 2000W C-band solid-state power amplifier based on gallium nitride technology is installed in a 36U standard 19-inch rack 1, which includes eight 400W C-band power amplifiers in 19-inch 3U chassis, two 8000W AC / DC power supplies in 19-inch 3U chassis, one C-band RF preamplifier in 19-inch 3U chassis, one monitoring and processing unit in 19-inch 3U chassis, one coupling detector unit, one pair of 8-path combining and power dividing networks 15, and several amplitude and phase stabilization cables.

[0030] The primary function of the C-band RF preamplifier 19-inch 3U chassis is to process external input signals (5.800GHz–6.75GHz) through a digitally controlled attenuator, predistorter, analog attenuator, and low-noise amplifier. The signals are then routed through an 8-path power divider network, resulting in eight outputs to eight C-band 400W 19-inch 3U power amplifier chassis. Each chassis contains a preamplifier module, driver module, and control module. One C-band RF preamplifier 19-inch 3U chassis is installed in each 36U standard 19-inch rack. The preamplifier chassis can output 20W of power with a gain greater than 40 dB.

[0031] The gain allocation for each module is as follows: 40dB for the C-band RF preamp driver in a 19-inch 3U chassis; 27dB for the C-band 400W power amplifier in a 19-inch 3U chassis (under large signal conditions); and -1.25dB for the radial synthesizer insertion loss. A single power amplifier chassis can output over 400W of RF power across the entire power frequency range. The outputs from eight 400W power amplifier chassis are routed through an eight-path radial synthesizer with an insertion loss of -0.31dB. After the radial synthesizer output, a microwave signal is output via a filtering and coupling assembly. A single coupling detector unit has an insertion loss of approximately -0.94dB, ultimately enabling the output of microwave signals exceeding 2350W.

[0032] The C-band 400W power amplifier in a 19-inch 3U chassis power divider adopts an integrated design and a waveguide synthesizer scheme combining HT and ET planes. Simulation data from the final stage power amplifier module shows that the synthesizer loss (including the power amplifier output microstrip to waveguide conversion) is approximately 0.3dB, with a synthesis efficiency exceeding 93%. Due to the reciprocity between the power divider and the synthesizer, the power divider designed in this section will also be used as a subsequent four-in-one synthesizer. Based on the above analysis and design, the 400W power amplifier module in this scheme consists of a 1-to-4 power divider / combiner and four power amplifier individual cards. Considering the compactness of the structure and the subsequent heat dissipation system design, the project team optimized the structure of the 1-to-4 power divider, assembling the four individual cards on both sides of the combiner, with two individual card modules mounted on each side.

[0033] The RF input signal is input through a coaxial waveguide, and after passing through a coaxial-to-waveguide converter, the RF signal is converted for transmission within the waveguide. After passing through a 1-to-4 power amplifier, the RF input signal is evenly divided into four microwave signals with consistent power and phase. These four microwave signals, after being amplified by the aforementioned 120W single-card amplifier module, each output power reaches over 120W. Then, the microwave signals are combined by a 4-in-1 combiner to synthesize the power of the four amplified signals. The combined signal is then filtered and coupled before output, and must meet the technical requirements of this project's task description.

[0034] This solution employs radial coaxial power combining to achieve the project's objectives. Since the maximum output power of a single-card module is 120W, considering factors such as coupler efficiency, filter insertion damage after power combining, and design margin, the C-band 2KW final stage unit design proposes using eight 19-inch 3U chassis for radial coaxial power combining of C-band 400W power amplifiers. Each 400W chassis is composed of four 120W single-card modules.

[0035] The principle of the eight-path radial coaxial synthesizer is that the radio frequency signal output from the 400W chassis is synthesized into eight paths by the radial synthesizer. At the same time, in order to ensure that each path does not interfere with each other, an isolator is set at the output of each 400W chassis.

[0036] Data Model of a 2000W C-band Solid-State Power Amplifier Based on Gallium Nitride Technology

[0037] The basic reliability mathematical model is as follows:

[0038]

[0039]

[0040] In the formula:

[0041] MBTF—Mean Time Between Failures, in hours;

[0042] —Total failure rate, unit: 10⁻⁶ / h;

[0043] — Failure rate of the i-th type of component, in units of 10⁻⁶ / h.

[0044] Component failure rate calculation

[0045] The failure rate models for the components were obtained from the failure rate datasheets.

[0046] Based on gallium nitride technology, the C-band 2000W solid-state power amplifier underwent repeated reliability verification based on thorough research. Taking into account possible failure modes, the reliability of the product was predicted. The evaluation results show that the mean time between failures (MTBF) is 18505.7 hours with a confidence level of 95%. As long as the quality level of the selected components is not lower than the expected level, the specified reliability requirements can be met.

[0047] The C-band 2000W solid-state power amplifier based on gallium nitride technology is radially synthesized from eight C-band 400W power amplifier chassis. Each 400W power amplifier output is equipped with a high-power filtering and coupling component. With this mode, each 400W power amplifier can support hot-swapping, that is, when a single 400W power amplifier fails, it can be replaced with a spare part in a timely manner without stopping the system.

[0048] When a single 400W final stage module fails, according to the radial synthesis principle, the 2KW output cabinet exhibits the following characteristics:

[0049] When the 400W final stage of the first channel fails, the output power drops by 1.24dB, which means the output power is 1648W.

[0050] When the two 400W final stages fail, the output power drops by 2.5dB, meaning the output power is 1238W.

[0051] When the 3-channel 400W final stage fails, the output power drops by 4.1dB, that is, the output power is 857W;

[0052] When the 4-channel 400W final stage fails, the output power drops by 6dB, meaning the output power is 553W.

[0053] A heat dissipation design for a C-band 2000W solid-state power amplifier based on gallium nitride technology:

[0054] A thermal design for a 2000W C-band solid-state power amplifier based on gallium nitride technology employs active air cooling, while also requiring the fan to be waterproof. Estimated power consumption and heat dissipation for the entire system and its main modules are provided.

[0055] The power amplifier's heat source mainly comes from three parts: eight C-band 400W power amplifiers, a C-band RF preamplifier driver, and an 8000W AC / DC power supply.

[0056] Heat dissipation measures

[0057] Using thermal analysis software, precise modeling is performed to locate hazardous points;

[0058] To address the issue of the highest heat output in the final stage power amplifier unit and AC-DC power supply module, this project models and simulates the power amplifier chip and power supply module, analyzes the overall temperature distribution under different external environments, and identifies the highest temperature point and high temperature distribution.

[0059] Figure 5 This is a thermal simulation diagram of a 400W C-band final stage power amplifier module. The final stage power amplifier unit generates the most heat. Its structure has two heat dissipation surfaces in contact with the upper and lower casings of the entire unit through thermally conductive silicone grease, and the heat is dissipated through an active air cooling system. The RF driver unit module uses thermally conductive silicone pads in contact with the casing for heat dissipation, but only one side is cooled. (The thermal simulation data...) Figure 5 (Setting the ambient temperature to +25℃) It can be seen that the temperature rise of the 400W final stage amplifier's casing is approximately 49 - 25 = 24℃. Based on the normal operating junction temperature of the amplifier chip, the estimated values ​​are: 49℃ (casing temperature) + 77W (heat) * 1.3℃ / W (thermal resistance) = 149.1℃. Since the maximum temperature that the PN junction inside the amplifier chip can withstand is 225℃, the calculation shows that the amplifier's 149.1℃ is far less than 225℃, therefore the amplifier can operate effectively and reliably.

[0060] A C-band 2000W solid-state power amplifier is installed in a 36U standard 19-inch rack 1, which includes eight 19-inch 3U chassis for C-band 400W power amplifiers (chambers 2-9), two 19-inch 3U chassis for 8000W AC / DC power supplies (chambers 12-13), one 19-inch 3U chassis for C-band RF preamplifier (chamber 10), and one 19-inch 3U chassis for monitoring and processing. It is configured with an 8-path directional composite network. The C-band 2KW power amplifier rack is designed with airflow channels and has a total of 24 fans for cooling, including 16 fans for the 19-inch 3U chassis of the C-band 400W power amplifiers and 4 fans for the 8000W power amplifiers. The AC / DC power supply is a cooling fan for a 19-inch 3U chassis. Two fans are C-band RF preamplifier fans for the 19-inch 3U chassis. The radial synthesizer is mounted on a heatsink at the rear of the rack. A blower fan and an exhaust fan are designed for cooling the radial synthesizer. Airflow diagrams and thermal design simulation data for the 2KW rack are as follows: Figure 6As shown in the figure (with the ambient temperature set at +25℃), the temperature rise of the 2KW cabinet is approximately 51.7-25=26.7℃. The ambient temperature at the cabinet's working site is maintained at 16℃ by air conditioning. Therefore, the temperature rise of the 2KW cabinet is controllable, and the power amplifier can work effectively and reliably for a long time.

[0061] Choosing a suitable thermally conductive material is crucial for quickly dissipating heat from the amplifier chip. The material used for the cavity of a single-card chip typically requires high thermal conductivity. Therefore, aluminum or copper are frequently chosen for fabricating the cavity. Among copper and aluminum, pure copper has relatively good thermal conductivity. The cavity of a power amplifier tube is fabricated from pure copper, allowing for the fastest possible transfer of heat from the amplifier chip to the single-card chip cavity.

[0062] Arranging heat dissipation fins on the heat sink's airflow duct increases the power amplifier's heat dissipation area, distributing heat from each module to each fin. Convection air then transfers the heat away from the fins, thus reducing the power amplifier's temperature. To improve heat dissipation efficiency, the fin thickness, height, and number must be carefully calculated and compared. The fin thickness and height determine the heat dissipation area of ​​each fin on the power amplifier module; multiplying their product by two and then by the number of fins gives the total heat dissipation area of ​​the radiator. Given the airflow velocity through the radiator fins and the radiator's thermal conductivity, the total heat dissipation surface area can be calculated using Newton's law of cooling.

[0063]

[0064] In the formula, A is the total heat dissipation area of ​​the radiator; P is the heat transfer power; h is the convective heat transfer coefficient of the fin surface; Tw is the surface temperature of the radiator fins; and Tf is the temperature of the convective air, i.e., the operating ambient temperature of the power amplifier. Assume the airflow through the radiator is 50 m³ / s. 3 / h, the convective heat transfer coefficient h of the radiator is taken as 20W / m 2 At an ambient operating temperature of 65℃, to achieve thermal equilibrium (Tw = 90℃) at 80℃ for a 1085W power amplifier module, the required total heat dissipation area is 2.17m². 2 If the heat sink fins are installed directly under the heat sink base, and each heat sink fin is 350mm × 40mm based on the length and width of the heat sink base, then the required number of heat sink fins can be calculated as follows:

[0065]

[0066] The application of fans requires consideration of how to create an efficient airflow path and the designed airflow rate within that path. The formation of the airflow path is influenced by the power amplifier's shape and the heatsink fins, resulting in either laminar or turbulent airflow. Airflow design must be considered within the system context, taking into account the power amplifier's specifications and the heatsink's performance parameters.

[0067] The required airflow can usually be calculated simply using the following formula.

[0068]

[0069] In the formula, Q is the required airflow; P is the heat dissipation power of the power amplifier. The temperature rise of the air; Cp is the density of air; Cp is the specific heat capacity of air at constant pressure. At standard atmospheric pressure and an ambient temperature of 70℃, the specific heat capacity of air at constant pressure is taken as 1.005 KJ / kg℃, and the air density as 1.029 kg / m³. The temperature rise of the air... It can be calculated using the following formula.

[0070]

[0071] In the formula, The temperature of the fins in the radiator; This refers to the ambient temperature. When the ambient temperature is 70°C... At that time, the thermal equilibrium temperature of the power amplifier heat sink fins was at 90°C. At that time, the air temperature rises 10 .

[0072] Therefore, the heat dissipation of each 400W C-band amplifier in a 19-inch 3U chassis is 689W. Based on the parameters set above, the required airflow is calculated using the following formula:

[0073]

[0074] This project uses the silent fan GW-TD0824J0B-FAL, which can achieve an airflow of 0.033 at full speed. Therefore, each 400W C-band amplifier in a 19-inch 3U chassis requires two fans.

[0075] Based on the preceding calculations, we obtained data on the heat sink fins and airflow. Considering the actual operating environment, lifespan, and quality of the power amplifier, we used high-efficiency pulsating heat pipes to evenly transfer the temperature of the heat sink base to each heat sink fin, and then used a fan for forced convection to remove the heat. According to the heat conduction formula, when the thermal conductivity of a material... The cross-sectional area A of the conductor and the temperature difference between the two ends of the conductor When all these parameters are fixed, the longer the length L of the heat transfer conductor, the less heat is transferred to the other end.

[0076]

[0077] Therefore, the thermal conductivity of the heat sink base plate decreases with the distance of heat transfer, making it difficult for heat to be transferred to the heat sink fins that are far from the power amplifier. In this case, a pulsating heat pipe with a high thermal conductivity is needed to improve the efficiency of heat transfer. The C-band 400W power amplifier in the 19-inch 3U chassis is a four-channel synthesizer, and the 2KW rack radial synthesizer is an eight-channel synthesizer. Eight single-card modules are evenly and planarly mounted on the heat sink base plate.

[0078] The heat generated by the chip's heat dissipation is first transferred to the bottom surface of the single-card cavity, and then from there to the heat sink base. Due to the long heat conduction distance and the small temperature difference between the single-card cavity and the contacting heat sink base, the amount of heat that can be conducted to the bottom heat sink base is limited. Therefore, a pulsating heat pipe needs to be installed on the heat sink base to quickly transfer heat to the distant heat sink fins. The heat pipe is typically cylindrical and can be flattened and bent appropriately according to installation requirements. The heat pipe structure is a tubular container with an internal vacuum, filled with a suitable amount of working fluid, and lined with capillary material. When the evaporation section receives heat from an external heat source, the liquid adhering to the surrounding capillary material immediately evaporates into gas. The evaporation of this gas creates pressure between the evaporation and condensation sections. Under this pressure, the vapor reaches the condensation section and releases the stored heat to the external heat sink through the condensation process. The cooled gas turns into liquid and enters the capillary material in the condensation section. Then, it flows back to the evaporation section by the capillary pressure of the capillary material to replenish the liquid consumed in the evaporation section, forming a complete heat dissipation loop. The cycle continues, transferring heat between the two ends of the heat pipe.

[0079] To facilitate maintainability, the C-band 2000W solid-state power amplifier based on gallium nitride (GaN) technology should adopt a modular, universal, serialized, and combinable design with strong versatility and interchangeability. The equipment should have self-diagnostic capabilities, enabling accurate and rapid fault location and reducing troubleshooting time. All components requiring disassembly and repair should have good accessibility, and each part of the equipment should have sufficient maintenance space, with clear disassembly and assembly markings and disassembly / assembly sequence numbers. The average maintenance time interval (MTTR) for a C-band 2000W solid-state power amplifier based on GaN technology should be ≤15 minutes.

[0080] This system, housed in a 19-inch 3U chassis (11), monitors and processes a 2000W C-band solid-state power amplifier based on gallium nitride (GaN) technology. The monitoring and processing unit comprises an industrial PC (1101) and a server (1102). Each power amplifier submodule is controlled, ensuring a display refresh rate of 1 second. The server's database and website programs are upgraded and maintained, with centralized log management supporting functions such as log retrieval, statistical analysis, and anomaly detection. It enables unattended, remote operation. The industrial PC (1101) is a domestically developed, self-developed industrial PC product. The industrial PC (110) uses a Phytium D2000 as its main processor, an X100 graphics card bridge, 8GB of memory, two Gigabit Ethernet ports, three USB 3.0 ports, and can also be expanded with serial ports and CAN.

[0081] The 1102 server is a fully domestically designed data center server based on the Huawei Kunpeng 920 processor. The 2280 balanced version is a 2U 2-way rack server (hereinafter referred to as 2280). This server is designed for applications in the internet, distributed storage, cloud computing, big data, and enterprise business, offering advantages such as high-performance computing, large-capacity storage, low energy consumption, easy management, and easy deployment.

[0082] Server 1102 adopts a modular and universal design. When dividing the modules, it adopts the approach of grouping similar functions together as much as possible, simplifying and standardizing the interfaces between modules to improve the overall reliability and maintainability of the machine. The server mainly consists of five modules: chassis (including front and rear panels), motherboard unit, hard drive unit, cooling fan assembly, and power supply unit.

[0083] The server chassis features a fully reinforced structure design. The front panel has a well-arranged hard drive installation window, button switches, and indicator lights, while the rear panel has various functional interfaces. The heat dissipation airflow design uses the front panel for air intake and the rear panel for air exhaust.

[0084] The server motherboard unit mainly consists of a motherboard, CPU, memory modules, and RAID card, providing a running platform for the entire system. Disk arrays can be configured through the platform management port.

[0085] The server hard drive unit consists of 4 hard drives, providing storage for the system and supporting NAS;

[0086] The server has a total of 6 cooling fans inside to enhance heat dissipation in each airflow channel;

[0087] The server power supply unit consists of a power module and power lines. This unit converts the input AC220V power to provide a stable DC power supply for the various modules inside the server.

[0088] In summary, compared with existing technologies, the C-band 2000W solid-state power amplifier based on gallium nitride technology has the following advantages:

[0089] 1. This invention provides a 2000W C-band solid-state power amplifier based on gallium nitride (GaN) technology, which realizes the power amplification function of the C-band. It uses a waveguide synthesizer combining HT and ET to combine four GaN power chips to output 400W. Then, eight C-band 400W power amplifiers are combined through eight paths, ultimately achieving excellent RF performance with 32 GaN power chips providing output power greater than 2000W in the 5.85~6.425GHz range, RF gain greater than 65dB, rated power consumption less than 11000W, and third-order intermodulation less than -29dBc (7dB backoff of rated power for dual-tone).

[0090] 2. A 400W C-band power amplifier in a 19-inch 3U chassis (2-9), two 8000W AC / DC power supplies in a 19-inch 3U chassis (12-13), one C-band RF preamplifier in a 19-inch 3U chassis (10), and one monitoring and processing chassis in a 19-inch 3U chassis. All these components adopt a modular design, based on the 19-inch 3U chassis standard, allowing for arbitrary combinations of output channels as needed. Changing the cabinet and radial synthesizer channels, and adding appropriate cables, can increase or decrease the total output power. Compared to integrated components, single modules have shorter development cycles, lower costs, and greater application flexibility. Especially for newly developed higher power applications, using modules for functional verification first can reduce trial-and-error costs and shorten project cycles. This invention features a modular layout, with each module clearly defined, easy maintenance, and reliable performance. It can operate normally in harsh environments (-40℃ to +55℃), offering high cost-effectiveness and making it worthy of widespread application.

[0091] 3. The most critical aspects of the gallium nitride-based C-band 2000W solid-state power amplifier of this invention are stability, system redundancy, maintainability, and the ability to support long-term operation. Based on the GJB / Z299C-2006 Electronic Equipment Reliability Prediction Manual, the mean time between failures (MTBF) of this gallium nitride-based C-band 2000W solid-state power amplifier is calculated to be ≥18000h; the mean time to repair (MTTR) is required to be less than 20min; and when two or fewer power units fail, the overall output power decreases according to a certain pattern, allowing the system to continue to support the completion of tasks under derating conditions.

[0092] 4. The monitoring and processing unit of this invention is composed of an industrial control computer 1101 and a server 1102. Each power amplifier submodule is controlled to ensure a display refresh rate of 1 time / second. The database and website program on the server are upgraded and maintained, and logs are centrally managed, supporting functions such as log retrieval, statistical analysis, and anomaly detection. It can realize an "unattended, remote operation" working mode.

[0093] The present invention has been described above by way of example with reference to the accompanying drawings. Obviously, the specific implementation of the present invention is not limited to the above-described manner. Any non-substantial improvements made using the inventive concept and technical solution of the present invention, or the direct application of the inventive concept and technical solution of the present invention to other occasions without modification, are all within the protection scope of the present invention.

Claims

1. A C-band solid-state power amplifier device based on gallium nitride technology, characterized in that: The device is equipped with a C-band RF preamplifier driver that receives RF signals. The C-band RF preamplifier driver outputs a drive signal to the final stage power amplifier unit. The final stage power amplifier unit outputs RF signals and coupled signals to the external system via a coupling detector unit. The combined detector unit outputs forward and reverse detection signals to the monitoring and processing unit. The C-band RF preamplifier driver outputs temperature and current parameters to the monitoring and processing unit. The monitoring and processing unit interacts with the power supply unit, which consists of the C-band RF preamplifier driver, the final stage power amplifier unit, and the coupling detector unit.

2. The C-band solid-state power amplifier based on gallium nitride technology according to claim 1, characterized in that: The C-band RF preamplifier consists of an isolator, an attenuator, a linearizer, and a driver amplifier connected in sequence. The isolator receives the RF input, and the driver amplifier outputs a signal to the final power amplifier unit. The C-band RF preamplifier operates in the frequency band of 5.800GHz to 6.75GHz, has an RF gain greater than 45dB, and an output power greater than 20 watts.

3. The C-band solid-state power amplifier based on gallium nitride technology according to claim 2, characterized in that: The final stage power amplifier unit receives the C-band RF preamplifier drive input signal from the 8-path power amplifier splitter and divides it into 8 independent isolators to send to the 400W power amplifier. Each of the 400W power amplifiers is sent to the input terminal of the 8-path power amplifier combiner via an independent isolator. One output of the 8-path power amplifier combiner is connected to the coupling detector unit.

4. The C-band solid-state power amplifier based on gallium nitride technology according to claim 3, characterized in that: The 400W power amplifier uses a waveguide synthesizer combining HT and ET to combine four gallium nitride power chips to output 400W. Each of the 400W power amplifiers has the same structure, consisting of a driver amplifier, a 4-channel power divider, four 120W single-card module amplifiers, a 4-channel combiner, and an isolator, arranged sequentially from input to output. The 400W power amplifier operates in the frequency band of 5.800GHz to 6.75GHz, has an RF gain greater than 25dB, and an output power greater than 400 watts.

5. The C-band solid-state power amplifier based on gallium nitride technology according to any one of claims 1-4, characterized in that: The coupling detection unit is equipped with a coupling filter that receives input signals and outputs radio frequency signals. The coupling filter outputs positive detection to the monitoring and processing unit via a 2-power divider and a detector. The coupling filter also outputs reverse detection directly to the monitoring and processing unit via a detector. The other output of the 2-power divider outputs a coupling signal to the outside via an isolator.

6. The C-band solid-state power amplifier based on gallium nitride technology according to claim 5, characterized in that: The C-band solid-state power amplifier device has a mechanism in which a 400W power amplifier, a power supply unit, and a C-band RF preamplifier are arranged in a stacked manner inside the cabinet. The C-band solid-state power amplifier device operates in the frequency band of 5.8 to 6.75 GHz and has a maximum continuous wave output power of 2000W.

7. The C-band solid-state power amplifier based on gallium nitride technology according to claim 6, characterized in that: The 400W power amplifier, power supply unit, and C-band RF preamplifier are all installed in independent flat cuboid housings. The housings are in close contact with each other and filled with thermal grease. Each housing has heat dissipation holes at both ends and a cooling fan inside the housing. The housings are made of aluminum or copper, and air ducts are provided inside the housings between the heat dissipation holes.

8. The C-band solid-state power amplifier based on gallium nitride technology according to claim 7, characterized in that: The components inside the housing are fixed tightly against the heat dissipation base plate. The back of the heat dissipation base plate has heat dissipation fins extending into the air duct. The gaps between the heat dissipation fins extend in the same direction as the airflow within the air duct. The area of ​​each heat dissipation fin inside the housing is greater than or equal to 2.17 m². 2 The airflow of the cooling fan in full-wind mode is greater than or equal to 0.033 m³ / h. 3 / s, the exhaust direction of the cooling fan is towards the outside of the cabinet.

9. The C-band solid-state power amplifier based on gallium nitride technology according to claim 8, characterized in that: The heat dissipation base plate is coiled with pulsating heat pipes, the inside of which is filled with capillary material, and all the pulsating heat pipes are connected to a coolant circulation device.

10. The C-band solid-state power amplifier based on gallium nitride technology according to claim 1 or 9, characterized in that: The power supply unit consists of two 8000W power supplies. Each 8000W power supply outputs four 2000W power supplies to provide 400W of power. Each 8000W power supply consists of an AC-DC power module, a power filter, and a power heat sink.

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