Light emitting device and display apparatus including same

Abstract

A light emitting device and a display apparatus including the same are provided. The light emitting device may include a light emitting unit including light emitting structures sequentially stacked, where each light emitting structure includes a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer sequentially stacked. The light emitting device may further include a separate electrode in contact with the first conductivity type semiconductor layer of the light emitting structure and on a lower surface of the light emitting cell. At least two of the individual electrodes may have conductive via structures. A common electrode in contact with a side surface of the second conductive type semiconductor layer of the light emitting structure may be disposed on a side surface of the light emitting unit. Side surfaces of the first conductive type semiconductor layer and the active layer of the light emitting structure may be insulated from the common electrode by an insulating layer.

Description

Technical Field

[0001] This disclosure relates to light-emitting devices and display devices including such light-emitting devices. Background Technology

[0002] Compared to other light sources, light-emitting devices such as light-emitting diodes (LEDs) are renowned as next-generation light sources with advantages such as long lifespan, low power consumption, fast response time, and environmental friendliness. Given these advantages, industrial demand for light-emitting devices is increasing. LEDs are typically used in a variety of products such as lighting fixtures or display devices.

[0003] Recently, ultra-small LEDs at the micrometer or nanometer scale have been developed. These devices are called microLEDs. MicroLEDs have been used in relatively large display devices (such as televisions), and there are also attempts to apply them to small display devices (such as displays for augmented reality (AR) devices). The extremely small size of microLEDs used in small display devices, on the order of a few micrometers, makes it difficult to ensure a large luminous area. In particular, in microLEDs where red, green, and blue (RGB) subpixels are arranged vertically, the luminous area is reduced due to the electrodes used to drive the respective subpixels, which decreases the luminous efficiency of the microLED. Summary of the Invention

[0004] According to embodiments of the present disclosure, a light-emitting device with improved luminous efficiency and a display device including the light-emitting device are provided.

[0005] According to embodiments of this disclosure, a light-emitting device can be provided, comprising: a light-emitting unit including a first light-emitting structure, a second light-emitting structure, and a third light-emitting structure stacked sequentially and configured to emit light of corresponding different wavelengths, wherein each of the first, second, and third light-emitting structures includes a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer stacked sequentially; a first separate electrode on the lower surface of the light-emitting unit and in contact with the first conductivity type semiconductor layer of the first light-emitting structure; a second separate electrode on the lower surface of the light-emitting unit and in contact with the first conductivity type semiconductor layer of the second light-emitting structure; a third separate electrode on the lower surface of the light-emitting unit and in contact with the first conductivity type semiconductor layer of the third light-emitting structure; a common electrode on the side surface of the light-emitting unit and in contact with the side surface of the second conductivity type semiconductor layer of each of the first, second, and third light-emitting structures; and an insulating layer that insulates the side surfaces of the first conductivity type semiconductor layer and the active layer of each of the first, second, and third light-emitting structures from the common electrode, wherein at least two of the first, second, and third separate electrodes include conductive path structures.

[0006] According to one or more embodiments of the present disclosure, the side surfaces of the first conductivity type semiconductor layer and the active layer of each of the first light-emitting structure, the second light-emitting structure and the third light-emitting structure may be recessed inwardly stepped from the side surface of the second conductivity type semiconductor layer of each of the first light-emitting structure, the second light-emitting structure and the third light-emitting structure.

[0007] According to one or more embodiments of this disclosure, the step length of the side surface of the first conductivity type semiconductor layer and the active layer of each of the first light-emitting structure, the second light-emitting structure and the third light-emitting structure from the side surface of the second conductivity type semiconductor layer of each of the first light-emitting structure, the second light-emitting structure and the third light-emitting structure can be 0.5 μm or less.

[0008] According to one or more embodiments of this disclosure, a common electrode may surround the side surface of the light-emitting unit.

[0009] According to one or more embodiments of this disclosure, the common electrode may extend to the upper surface of the light-emitting unit.

[0010] According to one or more embodiments of this disclosure, the common electrode may include a transparent electrode material.

[0011] According to one or more embodiments of this disclosure, a first individual electrode may include a first electrode pad in contact with the lower surface of a first conductivity type semiconductor layer of a first light-emitting structure, wherein a second individual electrode may include: a second electrode pad on the lower surface of the light-emitting unit; and a second conductive path electrically connecting the second electrode pad to the first conductivity type semiconductor layer of the second light-emitting structure, and wherein a third individual electrode may include: a third electrode pad on the lower surface of the light-emitting unit; and a third conductive path electrically connecting the third electrode pad to the first conductivity type semiconductor layer of the third light-emitting structure.

[0012] According to one or more embodiments of this disclosure, a first individual electrode may include: a first electrode pad on the lower surface of the light-emitting unit; and a first conductive path electrically connecting the first electrode pad to a first conductive type semiconductor layer of the first light-emitting structure; a second individual electrode may include: a second electrode pad on the lower surface of the light-emitting unit; and a second conductive path electrically connecting the second electrode pad to a first conductive type semiconductor layer of the second light-emitting structure; a third individual electrode may include: a third electrode pad on the lower surface of the light-emitting unit; and a third conductive path electrically connecting the third electrode pad to a first conductive type semiconductor layer of the third light-emitting structure.

[0013] According to one or more embodiments of the present disclosure, the light-emitting device may further include: a reflective layer surrounding a side surface of the light-emitting unit; and a passivation layer that insulates the common electrode from the reflective layer.

[0014] According to one or more embodiments of this disclosure, the side surface of the light-emitting unit may be parallel to the stacking direction of the first light-emitting structure, the second light-emitting structure and the third light-emitting structure.

[0015] According to one or more embodiments of this disclosure, the side surface of the light-emitting unit may be tilted to gradually extend outward from the first light-emitting structure toward the third light-emitting structure.

[0016] According to one or more embodiments of this disclosure, the light-emitting device may further include a scattering pattern on the upper surface of the light-emitting unit.

[0017] According to one or more embodiments of this disclosure, the light-emitting device may further include a lens on the upper surface of the light-emitting unit.

[0018] According to one or more embodiments of this disclosure, the third light-emitting structure can be configured to emit red light.

[0019] According to one or more embodiments of this disclosure, the first light-emitting structure and the second light-emitting structure can be configured to emit blue light and green light, respectively.

[0020] According to embodiments of this disclosure, a light-emitting device can be provided, comprising: a light-emitting unit including a plurality of light-emitting structures stacked sequentially, wherein each of the plurality of light-emitting structures includes a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer stacked sequentially; a plurality of individual electrodes on the lower surface of the light-emitting unit and respectively in contact with the first conductivity type semiconductor layer of the plurality of light-emitting structures, wherein at least one of the plurality of individual electrodes includes a conductive path structure; a common electrode on a side surface of the light-emitting unit, the common electrode being in contact with the side surface of the second conductivity type semiconductor layer of each of the plurality of light-emitting structures; and an insulating layer that insulates the side surfaces of the first conductivity type semiconductor layer and the active layer of each of the plurality of light-emitting structures from the common electrode.

[0021] According to one or more embodiments of this disclosure, the uppermost of the plurality of light-emitting structures may be configured to emit red light.

[0022] According to one or more embodiments of this disclosure, the side surfaces of the first conductivity type semiconductor layer and the active layer of each of the plurality of light-emitting structures may be recessed inwardly stepped from the side surface of the second conductivity type semiconductor layer of each of the plurality of light-emitting structures.

[0023] According to one or more embodiments of the present disclosure, the light-emitting device may further include: a reflective layer surrounding a side surface of the light-emitting unit; and a passivation layer that insulates the common electrode from the reflective layer.

[0024] According to embodiments of this disclosure, a display device can be provided, comprising a display panel including a plurality of the aforementioned light-emitting devices and a driver circuit configured to turn the plurality of light-emitting devices on and off. The display device may further include a controller configured to input on / off signals for the plurality of light-emitting devices to the driver circuit based on an image signal.

[0025] Further aspects of this disclosure will be set forth in part in the description which follows, and will also be apparent in part from the description, or may be learned by practicing exemplary embodiments of this disclosure. Attached Figure Description

[0026] The above and other aspects, features and advantages of certain embodiments of this disclosure will become more apparent from the following description taken in conjunction with the accompanying drawings, in which:

[0027] Figure 1 This is a schematic cross-sectional view of the light-emitting device according to the embodiment;

[0028] Figure 2 yes Figure 1 A schematic cross-sectional view of the light-emitting unit shown;

[0029] Figure 3 This is a schematic cross-sectional view of the light-emitting device according to the embodiment;

[0030] Figure 4 This is a schematic cross-sectional view of the light-emitting device according to the embodiment;

[0031] Figure 5 This is a schematic cross-sectional view of the light-emitting device according to the embodiment;

[0032] Figure 6 , Figure 7 and Figure 8 An example of a planar arrangement of the first individual electrode, the second individual electrode, and the third individual electrode is shown;

[0033] Figures 9A to 9M Manufacturing process is shown Figure 1 and Figure 3 An example of a method for a light-emitting device is shown;

[0034] Figures 10A to 10L Manufacturing process is shown Figure 4 and Figure 5 An example of a method for a light-emitting device is shown;

[0035] Figure 11 This is a schematic diagram illustrating an embodiment of the display device;

[0036] Figure 12 It is a block diagram of an embodiment of an electronic device including a display;

[0037] Figure 13 An implementation of a mobile device is shown as an example application of an electronic device;

[0038] Figure 14 An embodiment of an automotive head-up display device is shown as an example application of an electronic device.

[0039] Figure 15 An implementation of augmented reality glasses or virtual reality glasses as an example application of electronic devices is shown;

[0040] Figure 16 An implementation of a large signage display as an example application of an electronic device is shown; and

[0041] Figure 17 An implementation of a wearable display as an example application of an electronic device is shown. Detailed Implementation

[0042] Reference will now be made in detail to non-limiting exemplary embodiments of this disclosure, examples of which are illustrated in the accompanying drawings, wherein the same reference numerals refer to the same elements throughout. In this regard, embodiments of this disclosure may take different forms and should not be construed as limited to the description set forth herein. Therefore, only exemplary embodiments are described below with reference to the accompanying drawings to illustrate exemplary aspects of this disclosure. As used herein, the term “and / or” includes any and all combinations of one or more of the associated listed items.

[0043] Recent advancements in the technology of applying light-emitting devices (such as, for example, miniature light-emitting diodes (LEDs)) to displays have led to the release of televisions using miniature LEDs. Furthermore, attempts have been made to apply miniature LEDs to augmented reality devices. Unlike displays used in televisions, in displays for augmented reality devices, significantly smaller miniature LED display chips (or panels) can be fabricated integrally at the wafer level without transferring the microLED process. While the size of a single pixel in a television display can range from tens to hundreds of micrometers, in small or ultra-small displays (such as those for augmented reality devices), the size of a single pixel can be extremely small, on the order of a few micrometers.

[0044] To display a color image on a monitor, a pixel (color pixel) can include red-green-blue (RGB) subpixels. There are two types of arrangement structures for RGB subpixels: horizontal and vertical. In a horizontal arrangement, RGB subpixels are arranged horizontally, and in a vertical arrangement, they are arranged vertically. In a horizontal arrangement, each subpixel can include a micro-LED. In a vertical arrangement, each micro-LED can be an integral RGB micro-LED that integrates the RGB subpixels.

[0045] For a given size of color pixels, a horizontal arrangement can include smaller subpixels compared to a vertical arrangement, leading to higher horizontal fabrication difficulty. In a vertical arrangement, subpixels can be arranged vertically, thus potentially resulting in higher vertical fabrication difficulty. However, in a vertical arrangement, subpixels can be larger than in a horizontal arrangement, leading to higher efficiency (e.g., external quantum efficiency (EQE)).

[0046] When fabricating RGB microLED chips with a vertically arranged structure, conductive paths that partially or completely penetrate the sub-pixels can be used to form electrodes for driving the respective sub-pixels. For example, six electrodes can be used to drive RGB sub-pixels, five of which can be implemented by conductive paths. As the number of conductive paths increases, the light-emitting area of ​​the microLED decreases. In small or ultra-small displays (such as displays used in augmented reality devices), pixel sizes can be only a few micrometers, making it difficult to ensure a sufficient light-emitting area when many conductive paths are present. Therefore, reducing the number of conductive paths is beneficial to ensure a large light-emitting area.

[0047] According to embodiments of this disclosure, a light-emitting device with improved luminous efficiency, such as a vertical RGB micro-LED, can be provided, for example, by reducing the number of conductive paths to ensure sufficient light-emitting area, and a display device employing this light-emitting device can also be provided. For this purpose, the p-electrodes (or n-electrodes) of multiple sub-pixels can be formed as a common electrode. The common electrode can be formed on the side surface of the sub-pixels to maximize the pixel size. Therefore, the number of conductive paths can be reduced, ensuring sufficient light-emitting area, thereby improving luminous efficiency and reducing power consumption.

[0048] In the following, non-limiting exemplary embodiments of a light-emitting device and a display device employing the same light-emitting device will be described in detail with reference to the accompanying drawings. In the drawings, the same reference numerals refer to the same elements, and the dimensions of the elements in the drawings may be exaggerated for clarity and ease of description. The embodiments described below are merely examples, and various modifications can be made from these embodiments.

[0049] In the following text, the expression "on" as used herein can include not only "directly on" but also "on" in a non-contact manner. The singular expression also includes the plural meaning, provided it does not contradict the context. Furthermore, when an element is referred to as "comprising" (or "including") a component, that element may include other components rather than exclude them, unless specifically stated otherwise.

[0050] The term "the" and other similar demonstrative pronouns should be understood to include both singular and plural forms. The operations of the methods described herein can be performed in any suitable order unless otherwise indicated herein or clearly contradicted by the context, and this disclosure is not limited to the described order of operations.

[0051] The line connections or connecting components between the elements shown in the accompanying drawings are examples of functional connections and / or physical or circuit connections. In practical applications, they can be replaced or represented by various suitable alternative functional connections, physical connections, or circuit connections.

[0052] Any and all examples or examples of language used herein are intended only to describe exemplary implementations of this disclosure in more detail and are not intended to limit the scope of this disclosure unless otherwise stated.

[0053] Figure 1 This is a schematic cross-sectional view of the light-emitting device 1 according to the embodiment. Figure 2 yes Figure 1 The diagram shows a schematic cross-sectional view of the light-emitting unit 100. The light-emitting device 1 in this embodiment may be a vertically stacked type light-emitting device comprising a plurality of vertically stacked sub-pixels. The light-emitting device 1 may be, for example, a micro LED.

[0054] Reference Figure 1 and Figure 2The light-emitting device 1 may include light-emitting units 100 having a plurality of vertically stacked light-emitting structures and a plurality of electrodes for driving the plurality of light-emitting structures. The light-emitting device 1 may correspond to a pixel in a display device, and the plurality of light-emitting structures may correspond to vertically stacked sub-pixels forming a pixel. Each of the plurality of light-emitting structures may include a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer stacked sequentially. The plurality of electrodes may include a common electrode 40 shared by the plurality of light-emitting structures and a plurality of individual electrodes respectively corresponding to the plurality of light-emitting structures. The plurality of individual electrodes may be provided on the lower surface 102 of the light-emitting unit 100 and may contact the first conductivity type semiconductor layer of the plurality of light-emitting structures. At least some of the plurality of individual electrodes may have conductive path structures penetrating other light-emitting structures. The common electrode 40 may be provided on the side surface 103 of the light-emitting unit 100 and may contact the side surface of the second conductivity type semiconductor layer of the plurality of light-emitting structures. An insulating layer 60 may be provided on the side surfaces of the first conductivity type semiconductor layer and the active layer of the plurality of light-emitting structures to insulate these side surfaces from the common electrode.

[0055] The light-emitting unit 100 can be formed of a III-V group nitride semiconductor material. III-V group nitride semiconductor materials can include, for example, GaN, InGaN, AlInGaN, AlGaInP, etc. For example, the light-emitting unit 100 can be formed of a GaN-based semiconductor material. Each of the plurality of light-emitting structures can have a structure in which a first conductivity type semiconductor layer, an active layer having a quantum well structure, and a second conductivity type semiconductor layer are sequentially stacked. In the active layer, the bandgap energy can be controlled according to the composition ratio of indium (In) in the indium (In)-containing material layer, thereby determining the emission wavelength range.

[0056] For example, the plurality of light-emitting structures can emit light of different wavelengths. In this embodiment, the plurality of light-emitting structures may include a first light-emitting structure 10, a second light-emitting structure 20, and a third light-emitting structure 30 stacked sequentially. The first light-emitting structure 10 may be the lower layer of the light-emitting unit 100. The second light-emitting structure 20 may be stacked on the first light-emitting structure 10, and the third light-emitting structure 30 may be stacked on the second light-emitting structure 20. The third light-emitting structure 30 may be the upper layer of the light-emitting unit 100.

[0057] The first light-emitting structure 10 may include a first conductivity type semiconductor layer 11, an active layer 12 having a quantum well structure, and a second conductivity type semiconductor layer 13 stacked sequentially. The first conductivity type semiconductor layer 11 may be a semiconductor layer doped with a first type of impurity, such as, for example, a GaN layer. The active layer 12 may be a layer that emits light through electron-hole recombination. The active layer 12 may be grown on the first conductivity type semiconductor layer 11. The active layer 12 may have a quantum well structure. For example, the active layer 12 may have a quantum well structure that emits light by periodically changing the Al... x Ga y In z The x, y, and z values ​​in N are used to adjust the band gap to form a single-quantum-well structure or a multi-quantum-well structure. For example, the quantum well layer and the barrier layer can be paired in the form of InGaN / GaN, InGaN / InGaN, InGaN / AlGaN, or InGaN / InAlGaN to form a quantum well structure, and the band gap energy can be controlled according to the composition ratio of indium (In) in the material layer including indium (In), thereby adjusting the emission wavelength range. A second conductivity type semiconductor layer 13 can be formed on the active layer 12. The second conductivity type semiconductor layer 13 can be a semiconductor layer doped with a second type of impurity, such as, for example, a GaN layer. For example, the first type of impurity can be an n-type impurity, and the second type of impurity can be a p-type impurity. Conversely, the first type of impurity can be a p-type impurity, and the second type of impurity can be an n-type impurity. As an n-type impurity, Si, Ge, Se, Te, etc. can be used. As a p-type impurity, Mg, Zn, Be, etc. can be used. In this embodiment, the case where the first type of impurity is an n-type impurity and the second type of impurity is a p-type impurity will be described. In this case, the first conductivity type semiconductor layer 11 can be an n-GaN layer, and the second conductivity type semiconductor layer 13 can be a p-GaN layer.

[0058] The second light-emitting structure 20 may include a first conductivity type semiconductor layer 21, an active layer 22 with a quantum well structure, and a second conductivity type semiconductor layer 23 stacked sequentially. The descriptions of the first conductivity type semiconductor layer 11, the active layer 12 with a quantum well structure, and the second conductivity type semiconductor layer 13 of the first light-emitting structure 10 can be applied to the first conductivity type semiconductor layer 21, the active layer 22 with a quantum well structure, and the second conductivity type semiconductor layer 23 of the second light-emitting structure 20, respectively. The third light-emitting structure 30 may include a first conductivity type semiconductor layer 31, an active layer 32 with a quantum well structure, and a second conductivity type semiconductor layer 33 stacked sequentially. The descriptions of the first conductivity type semiconductor layer 11, the active layer 12 with a quantum well structure, and the second conductivity type semiconductor layer 13 of the first light-emitting structure 10 can be applied to the first conductivity type semiconductor layer 31, the active layer 32 with a quantum well structure, and the second conductivity type semiconductor layer 33 of the third light-emitting structure 30, respectively.

[0059] For example, the third light-emitting structure 30 located on the light output side of the light-emitting device 1 (i.e., the uppermost layer forming the light-emitting unit 100) can emit red light (e.g., light in the wavelength range of 630±20nm). The luminous efficiency of the third light-emitting structure 30 emitting red light can be lower than that of light-emitting structures emitting other colors of light. By placing the third light-emitting structure 30 emitting red light on the uppermost layer of the light-emitting unit 100, it is possible to avoid forming via holes for forming conductive path structures in the active layer 32 of the third light-emitting structure 30. Therefore, it is possible to prevent a decrease in the luminous efficiency of the third light-emitting structure 30 emitting red light. The first light-emitting structure 10 and the second light-emitting structure 20 can emit, for example, blue light (e.g., light in the wavelength range of 460±20nm) and green light (e.g., light in the wavelength range of 530±20nm), respectively. Optionally, the first light-emitting structure 10 and the second light-emitting structure 20 can emit, for example, green light and blue light, respectively.

[0060] The light-emitting unit 100 can be formed by sequentially stacking the first light-emitting structure 10, the second light-emitting structure 20, and the third light-emitting structure 30. In this embodiment, the side surface 103 of the light-emitting unit 100 can be parallel to the stacking direction of the first light-emitting structure 10, the second light-emitting structure 20, and the third light-emitting structure 30. Here, "parallel" does not specifically mean completely parallel to the stacking direction, but also includes the natural tilt that occurs during the mesa-etching process of the light-emitting unit 100.

[0061] The common electrode 40 can be an electrode shared by the first light-emitting structure 10, the second light-emitting structure 20, and the third light-emitting structure 30. The common electrode 40 can be electrically connected to the first conductivity type semiconductor layers 11, 21, and 31 or the second conductivity type semiconductor layers 13, 23, and 33 of the first light-emitting structure 10, the second light-emitting structure 20, and the third light-emitting structure 30. In this embodiment, the common electrode 40 can be electrically connected to the second conductivity type semiconductor layers 13, 23, and 33 of the first light-emitting structure 10, the second light-emitting structure 20, and the third light-emitting structure 30. In this embodiment, because the second conductivity type semiconductor layers 13, 23, and 33 can be p-type semiconductor layers, the common electrode 40 can be referred to as a p-type common electrode. The common electrode 40 can be provided on the side surface 103 of the light-emitting unit 100. The side surface 103 of the light-emitting unit 100 can be the surface that connects the upper surface 101 of the light-emitting unit 100 to the lower surface 102. The common electrode 40 can contact the side surfaces 13s, 23s, and 33s of the second conductivity type semiconductor layers 13, 23, and 33 of the first light-emitting structure 10, the second light-emitting structure 20, and the third light-emitting structure 30. The common electrode 40 can extend along the side surface 103 of the light-emitting unit 100 in the direction in which the first light-emitting structure 10, the second light-emitting structure 20, and the third light-emitting structure 30 are stacked, and can extend completely or partially in the circumferential direction. In other words, the common electrode 40 can completely surround the side surface 103 of the light-emitting unit 100, or can partially surround the side surface 103 of the light-emitting unit 100. The common electrode 40 can extend to the upper surface 101 of the light-emitting unit 100, that is, for example, to the upper surface of the second conductivity type semiconductor layer 33 of the third light-emitting structure 30. The common electrode 40 can cover the entire upper surface 101 of the light-emitting unit 100, that is, for example, covering the upper surface of the second conductivity type semiconductor layer 33 of the third light-emitting structure 30. The common electrode 40 can include an electrode material. Electrode materials may include, for example, Al, Ti, Pt, Ag, Au, Pd, TiW, or various combinations thereof. The common electrode 40 may include a transparent electrode material. Transparent electrode materials may include, for example, ITO.

[0062] The insulating layer 60 can insulate the side surfaces 11s, 21s, and 31s of the first conductive semiconductor layers 11, 21, and 31 of the first light-emitting structure 10, the second light-emitting structure 20, and the third light-emitting structure 30, as well as the side surfaces 12s, 22s, and 32s of the active layers 12, 22, and 32s, from the common electrode 40. The insulating layer 60 may include a first insulating layer 61, a second insulating layer 62, and a third insulating layer 63. The first insulating layer 61 may be disposed between the common electrode 40 and the side surfaces 11s and 12s of the first conductive semiconductor layers 11 and 12s of the first light-emitting structure 10. The second insulating layer 62 may be disposed between the common electrode 40 and the side surfaces 21s and 22s of the first conductive semiconductor layers 21 and 22 of the second light-emitting structure 20. The third insulating layer 63 may be disposed between the common electrode 40 and the side surfaces 31s and 32s of the first conductive semiconductor layers 31 and 32s of the third light-emitting structure 30. The material of the insulating layer 60 is not particularly limited. For example, the insulating layer 60 may include a dielectric material. The dielectric material may include SiO2, TiO2, Si3N4, AlO x AlO x N y , Ta2O5, TiN, AlN, ZrO2, TiAlN, TiSiN, HfO x Or various combinations thereof. The thickness of the insulating layer 60 can be from 5 nm to 50 nm.

[0063] In this embodiment, the side surfaces 11s, 21s, and 31s of the first conductivity type semiconductor layers 11, 21, and 31 of the first light-emitting structure 10, the second light-emitting structure 20, and the third light-emitting structure 30, and the side surfaces 12s, 22s, and 32s of the active layers 12, 22, and 32, can be recessed inwardly stepped from the side surfaces 13s, 23s, and 33s of the second conductivity type semiconductor layers 13, 23, and 33 of the first light-emitting structure 10, the second light-emitting structure 20, and the third light-emitting structure 30. As a result, a recessed portion 50 that can be recessed inwardly stepped can be formed in the side surface 103 of the light-emitting unit 100, and the recessed portion 50 includes a first recessed portion 51, a second recessed portion 52, and a third recessed portion 53. The step length 50S of the recessed portion 50 (in other words, the step length of the side surfaces 13s, 23s and 33s of the second conductivity type semiconductor layers 13, 23 and 33 of the first light-emitting structure 10, the second light-emitting structure 20 and the third light-emitting structure 30, the side surfaces 11s, 21s and 31s of the first conductivity type semiconductor layers 11, 21 and 31 of the first light-emitting structure 10, the second light-emitting structure 20 and the third light-emitting structure 30, and the side surfaces 12s, 22s and 32s of the active layers 12, 22 and 32) can be 0.5μm or less, relative to the side surfaces 13s, 23s and 33s of the second conductivity type semiconductor layers 11, 21 and 31 of the first light-emitting structure 10, the second light-emitting structure 20 and the third light-emitting structure 30, the side surfaces 12s, 22s and 32s of the active layers 12, 22 and 32) ...3s, 23s and 33s of the second conductivity type semiconductor layers 13, 23 and 33 of the third light-emitting structure 30, the side surfaces 12s, 22s and 32s of the second conductivity type semiconductor layers 13, 23 and 33 of the third light-emitting structure 30, the side surfaces 12s, 22s and 32 of the third light-emitting

[0064] An insulating layer 60 may be provided in the recessed portion 50. In other words, a first insulating layer 61, a second insulating layer 62, and a third insulating layer 63 may be provided in the first recessed portion 51, the second recessed portion 52, and the third recessed portion 53, respectively. The side surfaces 11s and 12s of the first conductive type semiconductor layer 11 and the active layer 12, and a portion of the lower surface of the second conductive type semiconductor layer 13, which may be included in the first light-emitting structure 10, may be exposed by the first recessed portion 51. The first insulating layer 61 may cover the exposed portions of the side surfaces 11s and 12s of the first conductive type semiconductor layer 11 and the active layer 12, and the lower surface of the second conductive type semiconductor layer 13, which may be included in the first light-emitting structure 10. A portion of the upper surface of the second conductive type semiconductor layer 13 of the first light-emitting structure 10, and the side surfaces 21s and 22s of the first conductive type semiconductor layer 21 and the active layer 22, and a portion of the lower surface of the second conductive type semiconductor layer 23, which may be included in the second light-emitting structure 20, may be exposed by the second recessed portion 52. The second insulating layer 62 can cover the exposed portion of the upper surface of the second conductive semiconductor layer 13 of the first light-emitting structure 10, as well as the exposed portion of the side surfaces 21s and 22s of the first conductive semiconductor layer 21 and the active layer 22, and the exposed portion of the lower surface of the second conductive semiconductor layer 23, which may be included in the second light-emitting structure 20. A portion of the upper surface of the second conductive semiconductor layer 23 of the second light-emitting structure 20, as well as the side surfaces 31s and 32s of the first conductive semiconductor layer 31 and the active layer 32, and a portion of the lower surface of the second conductive semiconductor layer 33, which may be included in the third light-emitting structure 30, can be exposed by the third recessed portion 53. The third insulating layer 63 can cover the exposed portion of the upper surface of the second conductive semiconductor layer 23 of the second light-emitting structure 20, as well as the exposed portion of the side surfaces 31s and 32s of the first conductive semiconductor layer 31 and the active layer 32, and the exposed portion of the lower surface of the second conductive semiconductor layer 33, which may be included in the third light-emitting structure 30.

[0065] The plurality of individual electrodes may be provided on the lower surface 102 of the light-emitting unit 100. In this embodiment, the plurality of individual electrodes may include a first individual electrode 71, a second individual electrode 72, and a third individual electrode 73. The first individual electrode 71, the second individual electrode 72, and the third individual electrode 73 may be in contact with the first conductivity type semiconductor layers 11, 21, and 31 of the first light-emitting structure 10, the second light-emitting structure 20, and the third light-emitting structure 30, respectively. The provision of the plurality of individual electrodes on the lower surface 102 of the light-emitting unit 100 means that the plurality of individual electrodes are provided on the lower side rather than the upper side in the stacking direction of the plurality of light-emitting structures 10, 20, and 30 of the light-emitting unit 100. Regarding the first individual electrode 71, the lower surface 102 of the light-emitting unit 100 may refer to the lower surface of the first conductivity type semiconductor layer 11 of the first light-emitting structure 10, and regarding the second individual electrode 72 and the third individual electrode 73, the lower surface 102 of the light-emitting unit 100 may refer to the lower surface of the passivation layer 74 provided on the lower surface of the first conductivity type semiconductor layer 11 of the first light-emitting structure 10.

[0066] A first individual electrode 71 may be provided on the lower surface 102 of the light-emitting unit 100. The first individual electrode 71 may include a first electrode pad 71a in contact with the lower surface of the first conductivity type semiconductor layer 11 of the first light-emitting structure 10 (which may form the lower surface 102 of the light-emitting unit 100). The second individual electrode 72 and the third individual electrode 73 may have conductive path structures. The second individual electrode 72 may include a second electrode pad 72a and a second conductive path 72b. The second electrode pad 72a is arranged on the lower surface 102 of the light-emitting unit 100 to be insulated from the lower surface of the first conductivity type semiconductor layer 11 of the first light-emitting structure 10. The second conductive path 72b electrically connects the second electrode pad 72a to the first conductivity type semiconductor layer 21 of the second light-emitting structure 20. That is, the second individual electrode 72 may penetrate the first light-emitting structure 10 to contact the first conductivity type semiconductor layer 21 of the second light-emitting structure 20. A passivation layer 72c may insulate the second conductive path 72b from the first light-emitting structure 10. The third individual electrode 73 may include a third electrode pad 73a and a third conductive path 73b. The third electrode pad 73a is arranged on the lower surface 102 of the light-emitting unit 100 to be insulated from the lower surface of the first conductive type semiconductor layer 11 of the first light-emitting structure 10. The third conductive path 73b electrically connects the third electrode pad 73a to the first conductive type semiconductor layer 31 of the third light-emitting structure 30. That is, the third individual electrode 73 can penetrate the first light-emitting structure 10 and the second light-emitting structure 20 to contact the first conductive type semiconductor layer 31 of the third light-emitting structure 30. The passivation layer 73c can insulate the third conductive path 73b from the first light-emitting structure 10 and the second light-emitting structure 20. The second individual electrode 72 and the third individual electrode 73 can be electrically insulated from the first conductive type semiconductor layer 11 of the first light-emitting structure 10. For example, the passivation layer 74 can be arranged between the second electrode pad 72a and the lower surface of the first conductive type semiconductor layer 11 of the first light-emitting structure 10, and between the third electrode pad 73a and the lower surface of the first conductive type semiconductor layer 11 of the first light-emitting structure 10.

[0067] The light-emitting device 1 can be bonded to the substrate 200 of the display panel. The substrate 200 of the display panel may include bonding pads 201, 202, and 203 corresponding to the first individual electrode 71, the second individual electrode 72, and the third individual electrode 73, respectively. According to some embodiments, bonding pads corresponding to the common electrode 40 may be provided in the substrate 200 of the display panel. Figure 1 The substrate 200 of the display panel is shown to be separated from the light-emitting device 1.

[0068] In a vertical light-emitting device in which three light-emitting structures are stacked, six electrodes may be required to drive the respective light-emitting structures. If electrodes are formed separately for each light-emitting structure, five of these electrodes may have conductive path structures. In a vertical light-emitting device where five electrodes may have conductive path structures, the light-emitting area of ​​each light-emitting structure can be reduced by the area occupied by the conductive path, which reduces luminous efficiency. According to embodiments of this disclosure, p-type electrodes or n-type electrodes (such as, for example, p-type electrodes) of multiple light-emitting structures can be formed as a single common electrode, and the other of the p-type and n-type electrodes (such as, for example, n-type electrodes) can be formed as a separate electrode. The common electrode can be formed on the side surface of the light-emitting unit in which the light-emitting structures are stacked. As a result, the size of the light-emitting device 1 (in other words, the pixel size) can be maximized. Furthermore, the number of conductive path structures can be reduced to, for example, two, which can increase the light-emitting area, thus improving luminous efficiency and reducing power consumption.

[0069] Figure 3 This is a schematic cross-sectional view of the light-emitting device 1a according to the embodiment. The light-emitting device 1a of this embodiment and... Figure 1 The difference between the light-emitting device 1 shown is that the light-emitting device 1a further includes a reflective layer 80 and a lens 90. In the following description, the focus will be on the differences between the light-emitting device 1 and the light-emitting device 1a. Components with the same function will be indicated by the same reference numerals, and redundant descriptions may be omitted.

[0070] Reference Figure 3The light-emitting device 1a may further include a reflective layer 80. The reflective layer 80 may surround the side surface 103 of the light-emitting unit 100. The reflective layer 80 may surround the surfaces of the light-emitting unit 100 other than the upper surface 101 (e.g., the lower surface 102 and the side surface 103). In this case, the common electrode 40 may include a transparent electrode material, such as, for example, ITO. The reflective layer 80 may reflect light generated from the first light-emitting structure 10, the second light-emitting structure 20, and the third light-emitting structure 30, causing it to be emitted toward the upper surface 101 of the light-emitting unit 100. As a result, the luminous efficiency of the light-emitting device 1a may be improved. The reflective layer 80 may be formed of a reflective material. Together with the reflective layer 80, connection pads 81, 82, and 83 may be formed to electrically connect the first individual electrode 71, the second individual electrode 72, and the third individual electrode 73 to the substrate 200 of the display panel. The bonding pads 81, 82, and 83 can contact the first individual electrode 71, the second individual electrode 72, and the third individual electrode 73, respectively, and can be electrically disconnected (e.g., electrically insulated) from the reflective layer 80. In this case, the reflective layer 80 can be formed of a reflective conductive material. For example, the conductive material can include Al, Ti, Pt, Ag, Au, Pd, TiW, or various combinations thereof. For insulation between the common electrode 40 and the reflective layer 80, a passivation layer 85 can be disposed between the common electrode 40 and the reflective layer 80. The bonding pads 81, 82, and 83 can be electrically insulated from the reflective layer 80 through the passivation layer 85. The passivation layer 85 can include a light-transmitting insulating material. For example, the light-transmitting insulating material can include SiO2.

[0071] Reference Figure 3 The light-emitting device 1a may further include a lens 90. The lens 90 may be provided on the upper surface 101 of the light-emitting unit 100. The lens 90 may be formed by thermoforming, for example, a photoresist. The lens 90 may adjust the emission angle of light generated from the first light-emitting structure 10, the second light-emitting structure 20, and the third light-emitting structure 30, and then emitted through the upper surface 101 of the light-emitting unit 100. As a result, light can be emitted from the light-emitting device 1a within a desired angular range.

[0072] In the above embodiments, the side surface 103 of the light-emitting unit 100 may be parallel to the stacking direction of the first light-emitting structure 10, the second light-emitting structure 20, and the third light-emitting structure 30, but the embodiments of this disclosure are not limited thereto. The side surface of the light-emitting unit may have a certain tilt angle. Figure 4 This is a schematic cross-sectional view of the light-emitting device 1b according to an embodiment. In the following description, the focus will be on the differences between the light-emitting device 1 and the light-emitting device 1b described above. Components with the same function will be indicated by the same reference numerals, and redundant descriptions may be omitted.

[0073] Reference Figure 4The light-emitting device 1b in this embodiment may include a light-emitting unit 100b. The light-emitting unit 100b and... Figures 1 to 3 The difference in the illustrated light-emitting unit 100 is that the light-emitting unit 100b may have an inclined side surface 103b extending outward from the first light-emitting structure 10 toward the third light-emitting structure 30. The description of the light-emitting unit 100 can be applied to the light-emitting unit 100b. The light-emitting unit 100b may include the first light-emitting structure 10, the second light-emitting structure 20, the third light-emitting structure 30, and light-transmitting insulating layers 91 and 92. A common electrode 40b may be provided on the inclined side surface 103b of the light-emitting unit 100b. In this embodiment, the common electrode 40b may be provided on the inclined side surface 103b of the light-emitting unit 100b and may not extend to the upper surface 101b. Figures 1 to 3 The description of the common electrode 40 shown can be applied to the common electrode 40b. The side surfaces of the first conductivity type semiconductor layers 11, 21 and 31 and the active layers 12, 22 and 32 of the first light-emitting structure 10, the second light-emitting structure 20 and the third light-emitting structure 30 can be insulated from the common electrode 40b by the insulating layer 60b. Figures 1 to 3 The description of insulating layer 60 shown can be applied to insulating layer 60b. Insulating layer 60b can be provided in a recessed portion 50b provided in the side surface 103b of the light-emitting unit 100b. The description of recessed portion 50 can be applied to recessed portion 50b. A light-transmitting insulating layer 91 can be provided on the upper surface of the third light-emitting structure 30. Light-transmitting insulating layer 91 can include, for example, SiO2 or SiN. A light-transmitting insulating layer 92 can be provided on the lower surface of the first light-emitting structure 10. Light-transmitting insulating layer 92 can include, for example, SiO2 or SiN. Therefore, the upper surface 101b of the light-emitting unit 100b can be the upper surface of the light-transmitting insulating layer 91, and the lower surface 102b of the light-emitting unit 100b can be the lower surface of the light-transmitting insulating layer 92.

[0074] When a light-emitting unit 100b with a side surface 103b extending toward the third light-emitting structure 30 as described above is used, the light generated from the first light-emitting structure 10, the second light-emitting structure 20 and the third light-emitting structure 30 can be guided toward the upper surface 101b (which is the light-emitting side) of the light-emitting unit 100b, thereby improving the light extraction efficiency.

[0075] The light-emitting device 1b of this embodiment may include a first individual electrode 71, a second individual electrode 72, and a third individual electrode 73. The first individual electrode 71, the second individual electrode 72, and the third individual electrode 73 may be provided on the lower surface 102b of the light-emitting unit 100b, i.e., on the lower surface of the light-transmitting insulating layer 92. The first individual electrode 71, the second individual electrode 72, and the third individual electrode 73 may all have conductive path structures. The first individual electrode 71 may include a first electrode pad 71a provided on the lower surface 102b of the light-emitting unit 100b and a first conductive path 71b electrically connecting the first electrode pad 71a to a first conductivity type semiconductor layer 11 of the first light-emitting structure 10. The first conductive path 71b may penetrate the light-transmitting insulating layer 92 and extend into the first conductivity type semiconductor layer 11. Similarly, the second individual electrode 72 and the third individual electrode 73 may include a second electrode pad 72a and a third electrode pad 73a provided on the lower surface 102b of the light-emitting unit 100b, and a second conductive path 72b and a third conductive path 73b electrically connecting the second electrode pad 72a and the third electrode pad 73a to the first conductive type semiconductor layers 21 and 31 of the second light-emitting structure 20 and the third light-emitting structure 30, respectively. The second conductive path 72b may penetrate the light-transmitting insulating layer 92 and the first light-emitting structure 10 and extend into the first conductive type semiconductor layer 21 of the second light-emitting structure 20. The third conductive path 73b may penetrate the light-transmitting insulating layer 92, the first light-emitting structure 10 and the second light-emitting structure 20, and may extend into the first conductive type semiconductor layer 31 of the third light-emitting structure 30.

[0076] Figure 5 This is a schematic cross-sectional view of the light-emitting device 1c according to an embodiment. The light-emitting device 1c of this embodiment and... Figure 4 The difference between the light-emitting device 1b shown is that the light-emitting device 1c may further include a reflective layer 80b, a scattering pattern 93, and a lens 90b. In the following description, the focus will be on the differences between the light-emitting device 1b and the light-emitting device 1c. Components with the same function will be indicated by the same reference numerals, and redundant descriptions may be omitted.

[0077] Reference Figure 5 The reflective layer 80b can surround the side surface 103b of the light-emitting unit 100b. Figures 1 to 3 The description of reflective layer 80 can be applied to reflective layer 80b. Passivation layer 85b can insulate common electrode 40b from reflective layer 80b. Figure 3 The description of passivation layer 85 can be applied to passivation layer 85b.

[0078] A scattering pattern 93 can be provided on the upper surface 101b of the light-emitting unit 100b, i.e., on the light-transmitting insulating layer 91. A lens 90b can be provided on the scattering pattern 93. Of the light emitted from the active layers 12, 22, and 32 of the first light-emitting structure 10, the second light-emitting structure 20, and the third light-emitting structure 30, light with an incident angle less than the critical angle relative to the light-transmitting insulating layer 91 can pass through the light-transmitting insulating layer 91 and can then be emitted to the outside, while the remaining light can be totally internally reflected back into the light-emitting unit 100b. Thus, in the comparative embodiment, light trapped inside the light-emitting device 1c by total internal reflection can be a factor that reduces the light extraction efficiency of the light-emitting device 1c. The scattering pattern 93 can be, for example, a raised or recessed pattern for scattering light. When light emitted from the active layers 12, 22, and 32 of the first light-emitting structure 10, the second light-emitting structure 20, and the third light-emitting structure 30 is incident on the scattering pattern 93, the light is scattered by the scattering pattern 93. Therefore, the light emitted from the light-emitting device 1c can have a uniform light intensity distribution. Furthermore, when light trapped inside the light-emitting device 1c by total internal reflection is incident on the scattering pattern 93, the light is scattered, thus changing its propagation direction. In this way, the scattering pattern 93 can scatter light trapped inside the light-emitting device 1c by total internal reflection to change the light propagation direction, causing light to be emitted from the light-emitting device 1c. Using this configuration, a light-emitting device 1c with improved light extraction efficiency can be achieved. According to some embodiments, the scattering pattern 93 can also be applied to... Figures 1 to 3 The light-emitting devices 1 and 1a are shown. For example, according to some embodiments, the scattering pattern can be provided in... Figure 3 On the upper surface 101 of the light-emitting unit 100 in the light-emitting device 1a shown, a lens 90 can be provided on the scattering pattern.

[0079] There are no particular restrictions on the planar arrangement of the first individual electrode 71, the second individual electrode 72, and the third individual electrode 73. Figure 6 , Figure 7 and Figure 8 An example of a planar arrangement of the first individual electrode 71, the second individual electrode 72, and the third individual electrode 73 is shown. For example, refer to... Figure 6 The second individual electrode 72 and the third individual electrode 73 can be spaced apart from each other within the first individual electrode 71, which may have a quadrilateral shape. (Refer to...) Figure 7 The second individual electrode 72 and the third individual electrode 73 may be arranged adjacent to two edges of the first individual electrode 71, which may have a quadrilateral shape, and these two edges may be spaced apart from each other. (Refer to...) Figure 8 The first individual electrode 71, the second individual electrode 72 and the third individual electrode 73 may each have a rectangular shape, and the first individual electrode 71, the second individual electrode 72 and the third individual electrode 73 may be arranged relative to each other in a transverse or longitudinal direction.

[0080] The following section will describe examples of methods for manufacturing light-emitting devices. Figures 9A to 9M Manufacturing process is shown Figure 1 and Figure 3 Examples of methods for the light-emitting devices 1 and 1a shown.

[0081] First, the process for forming the light-emitting unit 100 can be performed. (Refer to...) Figure 9A A first light-emitting structure 10, a second light-emitting structure 20, and a third light-emitting structure 30 can be sequentially stacked and grown on a growth substrate. The growth substrate can be used for semiconductor single-crystal growth; for example, silicon (Si) substrates, silicon carbide (SiC) substrates, sapphire substrates, etc., can be used. Furthermore, a substrate made of a material suitable for growing the light-emitting structure to be formed on the growth substrate (e.g., AlN, AlGaN, ZnO, GaAs, MgAl2O4, MgO, LiAlO2, LiGaO2, or GaN) can be used. According to some embodiments, a buffer layer for the epitaxial growth of the light-emitting structure can be provided on the surface of the growth substrate, and the light-emitting structure can be grown on the buffer layer.

[0082] For example, a first light-emitting structure 10 can be formed by sequentially growing a first conductivity type semiconductor layer 11, an active layer 12, and a second conductivity type semiconductor layer 13 on a growth substrate. The first light-emitting structure 10 can be formed of a III-V group nitride semiconductor material. III-V group nitride semiconductor materials can include, for example, GaN, InGaN, AlInGaN, AlGaInP, etc. In this embodiment, the first light-emitting structure 10 can be formed of a GaN-based semiconductor material. The first conductivity type semiconductor layer 11 can be, for example, an n-GaN layer doped with an n-type impurity. As an n-type impurity, Si, Ge, Se, Te, etc., can be used. As described above, the active layer 12 can be a layer that emits light through electron-hole recombination and can have a single quantum well or multiple quantum well structure. For example, the quantum well layer and the barrier layer can be paired in the form of InGaN / GaN, InGaN / InGaN, InGaN / AlGaN, or InGaN / InAlGaN to form a quantum well structure. The band gap energy can be controlled according to the composition ratio of indium (In) in the material layer including indium (In), thereby adjusting the emission wavelength range. The second conductivity type semiconductor layer 13 can be a p-GaN layer doped with p-type impurities. Mg, Zn, Be, etc., can be used as p-type impurities. The description of the first light-emitting structure 10 can be applied to the second light-emitting structure 20 and the third light-emitting structure 30. The first light-emitting structure 10, the second light-emitting structure 20, and the third light-emitting structure 30 can be formed by hydride vapor phase epitaxy (HVPE), molecular beam epitaxy (MBE), metal-organic vapor phase epitaxy (MOVPE), metal-organic chemical vapor deposition (MOCVD), other known methods, or combinations thereof. As a result, an epitaxial structure 300 including light-emitting units 100 can be formed.

[0083] Reference Figure 9B A mask layer 301 can be formed on the upper surface of the third light-emitting structure 30, allowing for mesa etching of the epitaxial structure 300. The mask layer 301 can be, for example, a SiN layer. Etching can be performed using either a dry etching process or a wet etching process. A dry etching process can utilize, for example, inductively coupled plasma (ICP). A wet etching process can be performed using, for example, a potassium hydroxide (KOH) solution or a tetramethylammonium hydroxide (TMAH) solution as the etchant.

[0084] Next, a process for forming the recessed portion 50 can be performed. For this purpose, the side surface of the epitaxial structure 300, i.e., the side surface 103 of the light-emitting unit 100, can be etched. Etching can be performed using an OH-based etchant (such as potassium hydroxide (KOH) solution or tetramethylammonium hydroxide (TMAH) solution). The etching rate of these etchants on the GaN-based material can depend on whether the GaN-based material is doped and the type of dopant. For example, the etching rate of these etchants on n-GaN can be significantly higher than their etching rate on p-GaN. In fact, these etchants can etch n-GaN at a significantly high rate but etch p-GaN at a negligible low rate. Thus, the first conductivity type semiconductor layer, which can be an n-GaN layer, and the undoped active layer can be selectively etched by utilizing the difference in etching rate depending on the dopant. The upper surface 101 of the light-emitting unit 100 can be protected by a mask layer 301.

[0085] Through this selective etching process, such as Figure 9C As shown, the side surfaces 11s and 12s of the first conductive semiconductor layer 11 and the active layer 12 of the first light-emitting structure 10 can be stepped inward from the side surface 13s of the second conductive semiconductor layer 13, thereby forming a first recessed portion 51. Similarly, the side surfaces 21s and 22s of the first conductive semiconductor layer 21 and the active layer 22 of the second light-emitting structure 20 can be stepped inward from the side surface 23s of the second conductive semiconductor layer 23 to form a second recessed portion 52, and the side surfaces 31s and 32s of the first conductive semiconductor layer 31 and the active layer 32 of the third light-emitting structure 30 can be stepped inward from the side surface 33s of the second conductive semiconductor layer 33 to form a third recessed portion 53. A recessed portion 50, which may include the first recessed portion 51, the second recessed portion 52, and the third recessed portion 53, can be formed in the side surface 103 of the light-emitting unit 100. The step length 50S of the recessed portion 50 can be determined by the etching time. The etching time can be adjusted so that the step length 50S is 0.5μm or less.

[0086] Next, insulating layer 60 can be formed. (Refer to...) Figure 9D An insulating material layer 302 can be formed. The insulating material layer 302 can be formed on the side surface 103 of the light-emitting unit 100, including the recessed portion 50, and on the upper surface of the mask layer 301. There are no particular limitations on the insulating material. For example, the insulating material can include a dielectric material. The dielectric material can include SiO2, TiO2, Si3N4, AlO2, etc. x AlO x N y , Ta2O5, TiN, AlN, ZrO2, TiAlN, TiSiN, HfO xOr various combinations thereof. The thickness of the insulating material layer 302 can be from 5 nm to 50 nm. In this embodiment, the insulating material layer 302 can be formed of SiO2 as a light-transmitting insulating material. For example, the insulating material layer 302 can be formed by sputtering, atomic layer deposition (ALD), plasma-enhanced atomic layer deposition (PEALD), chemical vapor deposition (CVD), plasma-enhanced chemical vapor deposition (PECVD), physical vapor deposition (PVD), other known methods, or combinations thereof. In this embodiment, the light-transmitting insulating material layer 302 can be formed by ALD.

[0087] like Figure 9E As shown, an insulating layer 60 comprising a first insulating layer 61, a second insulating layer 62, and a third insulating layer 63 can be formed by removing the light-transmitting insulating material layer 302 formed on the side surfaces 13s, 23s, and 33s of the second conductive type semiconductor layers 13, 23, and 33 of the first light-emitting structure 10, the second light-emitting structure 20, and the third light-emitting structure 30. This process can be performed, for example, by a dry etching process.

[0088] Next, the process for forming the common electrode 40 can be performed. First, the mask layer 301 can be removed to expose the upper surface 101 of the light-emitting unit 100. Then, electrode material can be deposited on the upper surface 101 and side surfaces 103 of the light-emitting unit 100. The electrode material can cover the side surfaces 13s, 23s, and 33s of the second conductivity type semiconductor layers 13, 23, and 33 of the first light-emitting structure 10, the second light-emitting structure 20, and the third light-emitting structure 30, as well as the insulating layer 60, and can cover up to the exposed upper surface 101 of the light-emitting unit 100. As a result, as Figure 9F As shown, the common electrode 40 can be formed to contact the side surfaces 13s, 23s, and 33s of the second conductivity type semiconductor layers 13, 23, and 33 of the first light-emitting structure 10, the second light-emitting structure 20, and the third light-emitting structure 30. The electrode material can include, for example, Al, Ti, Pt, Ag, Au, Pd, TiW, or various combinations thereof. The electrode material can include transparent electrode materials, such as, for example, ITO. This process can be performed by, for example, sputtering, ALD, PEALD, CVD, PECVD, PVD, other known methods, or combinations thereof. In this embodiment, the common electrode 40 can be formed by ALD.

[0089] Next, we will refer to Figures 9G to 9J The process for forming the first individual electrode 71, the second individual electrode 72, and the third individual electrode 73 is described. For example... Figure 9GAs shown, a dummy substrate 304 can be attached to the common electrode 40 formed on the upper surface 101 of the light-emitting unit 100, and then the light-emitting unit 100 can be flipped. The upwardly exposed lower surface 102 of the light-emitting unit 100 (i.e., the lower surface of the first conductivity type semiconductor layer 11 of the first light-emitting structure 10) can be polished to planarize it. At the same time, the portion 11a protruding from the side surface of the common electrode 40 in the first conductivity type semiconductor layer 11 of the first light-emitting structure 10 can be removed (see...). Figure 9F ).like Figure 9H As shown, vias 305 and 306 can be formed extending downward from the lower surface 102 of the light-emitting unit 100. The vias 305 and 306 can be formed by an etching process. The via 305 can extend from the lower surface of the first conductive type semiconductor layer 11 of the first light-emitting structure 10 through the first light-emitting structure 10 to the first conductive type semiconductor layer 21 of the second light-emitting structure 20. The via 305 can partially extend into the first conductive type semiconductor layer 21 of the second light-emitting structure 20. The via 306 can extend from the lower surface of the first conductive type semiconductor layer 11 of the first light-emitting structure 10 through the first light-emitting structure 10 and the second light-emitting structure 20 to the first conductive type semiconductor layer 31 of the third light-emitting structure 30. The via 306 can partially extend into the first conductive type semiconductor layer 31 of the third light-emitting structure 30.

[0090] like Figure 9I As shown, passivation layers 74 and 72c and 73c can be formed by depositing insulating material on the lower surface 102 of the light-emitting unit 100 (i.e., the lower surface of the first conductivity type semiconductor layer 11 of the first light-emitting structure 10) and on the inner walls of the via holes 305 and 306. The insulating material is not particularly limited and may include, for example, SiO2, TiO2, Si3N4, AlO2, etc. x AlO x N y , Ta2O5, TiN, AlN, ZrO2, TiAlN, TiSiN, HfO x Or various combinations thereof. The process can be performed by, for example, sputtering, ALD, PEALD, CVD, PECVD, PVD, other known methods, or combinations thereof. An opening 74a can be formed in the passivation layer 74 to expose the lower surface of the first conductivity type semiconductor layer 11 of the first light-emitting structure 10.

[0091] like Figure 9JAs shown, a first electrode pad 71a can be formed by depositing electrode material on the lower surface 102 of the light-emitting unit 100 (i.e., the lower surface of the first conductivity type semiconductor layer 11 of the first light-emitting structure 10) via an opening 74a in the passivation layer 74. As a result, a first individual electrode 71 can be formed. Furthermore, a second electrode pad 72a, a third electrode pad 73a, a second conductive path 72b, and a third conductive path 73b can be formed by depositing electrode material on the sidewalls of the vias 305 and 306 and on the passivation layer 74. As a result, a second individual electrode 72 and a third individual electrode 73 can be formed.

[0092] like Figure 9K As shown, after completion Figure 9J After the process shown, the light-emitting unit 100 can be flipped and then bonded to the substrate 200 of the display panel. The substrate 200 is provided with bonding pads 201, 202, and 203 corresponding to the first individual electrode 71, the second individual electrode 72, and the third individual electrode 73, respectively. Then, the dummy substrate 304 can be removed. As a result, a display panel can be manufactured. Figure 1 The light-emitting device 1 shown.

[0093] Next, the process for forming the reflective layer 80 and the passivation layer 85 will be described. After completing... Figure 9J Following the process shown, the first individual electrode 71, the second individual electrode 72, and the third individual electrode 73 can be partially masked, and an insulating material can be deposited on the outer peripheral surface of the light-emitting unit 100. Then, when the mask is removed, a passivation layer 85 can be formed, such as... Figure 9L As shown. Contact holes 307, 308, and 309 can be formed in the passivation layer 85 to expose the first individual electrode 71, the second individual electrode 72, and the third individual electrode 73. The insulating material is not particularly limited and may include, for example, SiO2, TiO2, Si3N4, and AlO2. x AlO x N y , Ta2O5, TiN, AlN, ZrO2, TiAlN, TiSiN, HfO x Or various combinations thereof. The process can be performed by, for example, sputtering, ALD, PEALD, CVD, PECVD, PVD, other known methods, or combinations thereof. In this embodiment, the passivation layer 85 can be formed by ALD.

[0094] like Figure 9MAs shown, a reflective layer 80 can be formed by depositing a reflective material (such as, for example, a reflective conductive material) on the outer periphery of the passivation layer 85. For example, the conductive material may include Al, Ti, Pt, Ag, Au, Pd, TiW, or various combinations thereof. The reflective layer 80 can be electrically isolated (e.g., electrically insulated) from the common electrode 40 through the passivation layer 85. The conductive material may fill the contact holes 307, 308, and 309. After depositing the conductive material, the conductive material layers can be patterned such that the conductive material filling the contact holes 307, 308, and 309 can be separated from each other. As a result, connection pads 81, 82, and 83 for connecting the first individual electrode 71, the second individual electrode 72, and the third individual electrode 73 to the outside can be formed.

[0095] exist Figure 9M In the state shown, the light-emitting unit 100 can be flipped and bonded to the substrate 200 of the display panel, and the dummy substrate 304 can be removed, as shown. Figure 3 As shown. Then, a lens 90 can be formed on the upper surface 101 of the light-emitting unit 100 or on the surface of the common electrode 40 formed on the upper surface 101. The method of forming the lens 90 is not particularly limited. For example, a light-transmitting layer can be formed by depositing a thermoplastic material on the upper surface 101 of the light-emitting unit 100 or on the surface of the common electrode 40 formed on the upper surface 101. For example, the thermoplastic material may include photoresist, polyester, acrylic, epoxy resin, etc. The shape of the light-transmitting layer can be, for example, cylindrical. Then, for example, a hot reflow process can be performed to shape the cylindrical light-transmitting layer into, for example, a dome-shaped lens. The curvature of the lens 90 can be controlled by the surface energy of the upper surface 101 of the light-emitting unit 100 or the surface of the common electrode 40 formed on the upper surface 101, the contact angle of the light-transmitting layer, the thickness and width of the light-transmitting layer, the hot reflow process temperature, etc. As a result, it is possible to manufacture... Figure 3 The light-emitting device 1a shown is shown.

[0096] Figures 10A to 10L Manufacturing process is shown Figure 4 and Figure 5 Examples of methods for the light-emitting devices 1b and 1c shown.

[0097] First, the process for forming the light-emitting unit 100b can be performed. (Refer to...) Figure 10A The first light-emitting structure 10, the second light-emitting structure 20, and the third light-emitting structure 30 can be sequentially stacked and grown on the growth substrate. The process for sequentially growing the first light-emitting structure 10, the second light-emitting structure 20, and the third light-emitting structure 30 can be described with reference to the above. Figure 9AThe same applies. As a result, an epitaxial structure 400 can be formed. Then, a light-transmitting insulating material can be deposited on the third light-emitting structure 30 to form a light-transmitting insulating layer 401, and a dummy substrate 402 can be attached to the light-transmitting insulating layer 401. The light-transmitting insulating material may include, for example, SiO2 or SiN. The light-transmitting insulating layer 401 can be formed by, for example, ALD. The dummy substrate 402 can be attached to the light-transmitting insulating layer 401.

[0098] Next, as Figure 10B As shown, the epitaxial structure 400 can be flipped, and a light-transmitting insulating layer 403 can be formed by depositing a light-transmitting insulating material on the upwardly exposed surface 404 of the epitaxial structure 400 (i.e., on the lower surface of the first conductivity type semiconductor layer 11 of the first light-emitting structure 10). The light-transmitting insulating material may include, for example, SiO2 or SiN. The light-transmitting insulating layer 403 can be formed by, for example, ALD. The epitaxial structure 400 can be mesa etched using the light-transmitting insulating layer 403 as a mask. Etching can be performed by a dry etching process or a wet etching process. The dry etching process can utilize, for example, ICP. The wet etching process can be performed by using, for example, potassium hydroxide (KOH) solution or tetramethylammonium hydroxide (TMAH) solution as an etchant. As a result, a light-emitting unit 100b can be formed, including the first light-emitting structure 10, the second light-emitting structure 20, the third light-emitting structure 30, and the light-transmitting insulating layers 91 and 92, and having a tilted side surface 103b.

[0099] Next, a process for forming the recessed portion 50b can be performed. For this purpose, the side surface 103b of the light-emitting unit 100b can be etched. Etching can be performed using an OH-based etchant (such as potassium hydroxide (KOH) solution or tetramethylammonium hydroxide (TMAH) solution). The etching rate of these etchants on the GaN-based material can depend on whether the GaN-based material is doped and the type of dopant. For example, the etching rate of these etchants on n-GaN can be significantly higher than their etching rate on p-GaN. In fact, these etchants can etch n-GaN at a significantly high rate but etch p-GaN at a negligible low rate. Thus, the first conductivity type semiconductor layer, which can be an n-GaN layer, and the undoped active layer can be selectively etched by utilizing the difference in etching rate depending on the dopant. Through this selective etching process, such as... Figure 10CAs shown, the side surfaces 11s and 12s of the first conductive semiconductor layer 11 and the active layer 12 of the first light-emitting structure 10 can be stepped inward from the side surface 13s of the second conductive semiconductor layer 13, thereby forming a first recessed portion 51. Similarly, the side surfaces 21s and 22s of the first conductive semiconductor layer 21 and the active layer 22 of the second light-emitting structure 20 can be stepped inward from the side surface 23s of the second conductive semiconductor layer 23 to form a second recessed portion 52, and the side surfaces 31s and 32s of the first conductive semiconductor layer 31 and the active layer 32 of the third light-emitting structure 30 can be stepped inward from the side surface 33s of the second conductive semiconductor layer 33 to form a third recessed portion 53. A recessed portion 50b including the first recessed portion 51, the second recessed portion 52, and the third recessed portion 53 can be formed in the side surface 103b of the light-emitting unit 100b. The step length 50S of the recessed portion 50b can be determined by the etching time. The etching time can be adjusted so that the step length 50S is 0.5μm or less.

[0100] Next, insulating layer 60b can be formed. (Refer to...) Figure 10D An insulating material layer 405 can be formed. The insulating material layer 405 can be formed on the side surface 103b and the lower surface 102b of the light-emitting unit 100b, including the recessed portion 50b. There are no particular limitations on the insulating material. For example, the insulating material may include a dielectric material. The dielectric material may include SiO2, TiO2, Si3N4, AlO2, etc. x AlO x N y , Ta2O5, TiN, AlN, ZrO2, TiAlN, TiSiN, HfO x Or various combinations thereof. The thickness of the insulating material layer 405 can be from 5 nm to 50 nm. In this embodiment, the insulating material layer 405 can be formed of SiO2 as a light-transmitting insulating material. For example, the insulating material layer 405 can be formed by sputtering, ALD, PEALD, CVD, PECVD, PVD, other known methods, or combinations thereof. In this embodiment, the light-transmitting insulating material layer 405 can be formed by ALD.

[0101] like Figure 10E As shown, an insulating layer 60b comprising a first insulating layer 61, a second insulating layer 62, and a third insulating layer 63 can be formed by removing portions of the insulating material layer 405 formed on the side surfaces 13s, 23s, and 33s of the second conductive type semiconductor layers 13, 23, and 33 of the first light-emitting structure 10, the second light-emitting structure 20, and the third light-emitting structure 30, as well as on the lower surface 102b of the light-emitting unit 100b. This process can be performed, for example, by a dry etching process.

[0102] Next, a process for forming the common electrode 40b can be performed. Electrode material can be deposited on the lower surface 102b and side surface 103b of the light-emitting unit 100b. The electrode material can cover the side surfaces 13s, 23s, and 33 of the second conductivity type semiconductor layers 13, 23, and 33 of the first light-emitting structure 10, the second light-emitting structure 20, and the third light-emitting structure 30, as well as the insulating layer 60b. As a result, as Figure 10F As shown, the common electrode 40b can be formed to contact the side surfaces 13s, 23s, and 33s of the second conductivity type semiconductor layers 13, 23, and 33 of the first light-emitting structure 10, the second light-emitting structure 20, and the third light-emitting structure 30. The electrode material can include, for example, Al, Ti, Pt, Ag, Au, Pd, TiW, or various combinations thereof. The electrode material can include transparent electrode materials, such as, for example, ITO. This process can be performed by, for example, sputtering, ALD, PEALD, CVD, PECVD, PVD, other known methods, or combinations thereof. In this embodiment, the common electrode 40b can be formed by ALD.

[0103] Next, we will refer to Figures 10G to 10H The process for forming the first individual electrode 71, the second individual electrode 72, and the third individual electrode 73 is described. First, as... Figure 10G As shown, a portion of the common electrode 40b formed on the upper surface of the light-transmitting insulating layer 403 can be removed, and the exposed upper surface of the light-transmitting insulating layer 403 can be polished to planarize it. Then, vias 406, 407, and 408 can be formed. The vias 406, 407, and 408 can be formed by an etching process. The via 406 extends through the light-transmitting insulating layer 403 to the first conductive type semiconductor layer 11 of the first light-emitting structure 10. The via 406 extends partially into the first conductive type semiconductor layer 11 of the first light-emitting structure 10. The via 407 extends through the light-transmitting insulating layer 403 and the first light-emitting structure 10 to the first conductive type semiconductor layer 21 of the second light-emitting structure 20. The via 407 extends partially into the first conductive type semiconductor layer 21 of the second light-emitting structure 20. The via 408 extends through the light-transmitting insulating layer 403, the first light-emitting structure 10, and the second light-emitting structure 20 to the first conductive type semiconductor layer 31 of the third light-emitting structure 30. The via 408 can extend partially into the first conductive semiconductor layer 31 of the third light-emitting structure 30.

[0104] Next, passivation layers 72c and 73c can be formed by depositing insulating material on the inner walls of vias 407 and 408. The insulating material is not particularly limited and may include, for example, SiO2, TiO2, Si3N4, AlO2, etc. x AlO x N y, Ta2O5, TiN, AlN, ZrO2, TiAlN, TiSiN, HfO x Or various combinations thereof. The process can be performed by, for example, sputtering, ALD, PEALD, CVD, PECVD, PVD, other known methods, or combinations thereof. In this embodiment, passivation layers 72c and 73c can be formed by ALD.

[0105] like Figure 10H As shown, a first conductive path 71b, a second conductive path 72b, and a third conductive path 73b, as well as a first electrode pad 71a, a second electrode pad 72a, and a third electrode pad 73a respectively connected to and arranged on the lower surface of the light-transmitting insulating layer 403, can be formed by depositing electrode material inside the via holes 406, 407, and 408 and on the lower surface of the light-transmitting insulating layer 403. As a result, a first individual electrode 71, a second individual electrode 72, and a third individual electrode 73 with conductive path structures can be formed on the lower surface 102b of the light-emitting unit 100b.

[0106] exist Figure 10H In the shown state, the light-emitting unit 100b can be flipped and then bonded to the substrate 200 of the display panel. The substrate 200 is provided with bonding pads 201, 202, and 203 corresponding to the first individual electrode 71, the second individual electrode 72, and the third individual electrode 73, respectively. Then, the dummy substrate 402 can be removed, and the light-transmitting insulating layer 401 can be planarized. Figure 4 The light-transmitting insulating layers 91 and 92 shown can be implemented by light-transmitting insulating layers 401 and 403, respectively. As a result, it is possible to manufacture... Figure 4 The light-emitting device 1b is shown.

[0107] Next, the process for forming the reflective layer 80b and the passivation layer 85b will be described. During the execution... Figure 10H Following the process shown, the first individual electrode 71, the second individual electrode 72, and the third individual electrode 73 can be partially masked, and an insulating material can be deposited on the outer peripheral surface of the light-emitting unit 100b. Then, when the mask is removed, a passivation layer 85b can be formed, as shown. Figure 10I As shown. Contact holes 409, 410, and 411 can be formed in the passivation layer 85b to expose the first individual electrode 71, the second individual electrode 72, and the third individual electrode 73. The insulating material is not particularly limited and may include, for example, SiO2, TiO2, Si3N4, AlO2, etc. x AlO x N y , Ta2O5, TiN, AlN, ZrO2, TiAlN, TiSiN, HfO xOr various combinations thereof. The process can be performed by, for example, sputtering, ALD, PEALD, CVD, PECVD, PVD, other known methods, or combinations thereof. In this embodiment, the passivation layer 85b can be formed by ALD.

[0108] like Figure 10J As shown, a reflective layer 80b can be formed by depositing a reflective material (such as, for example, a reflective conductive material) on the outer periphery of the passivation layer 85b. For example, the conductive material may include Al, Ti, Pt, Ag, Au, Pd, TiW, or various combinations thereof. The reflective layer 80b can be electrically isolated (e.g., electrically insulated) from the common electrode 40b by the passivation layer 85b. The conductive material may fill the contact holes 409, 410, and 411. After depositing the conductive material, the conductive material layers can be patterned such that the conductive material filling the contact holes 409, 410, and 411 can be separated from each other. As a result, connection pads 81, 82, and 83 for connecting the first individual electrode 71, the second individual electrode 72, and the third individual electrode 73 to the outside can be formed.

[0109] exist Figure 10J In the state shown, as Figure 10K As shown, the light-emitting unit 100b can be flipped and bonded to the substrate 200 of the display panel, and the dummy substrate 402 can be removed. The upper surface of the light-transmitting insulating layer 401 can be polished to flatten it. Next, as Figure 10L As shown, a scattering pattern 93 can be formed on the light-transmitting insulating layer 401 by forming a light-transmitting material layer on the upper surface of the light-transmitting insulating layer 401 and etching the light-transmitting material layer into a certain uneven pattern. Next, a lens 90b can be formed on the light output side of the light-emitting unit 100b (such as on the scattering pattern 93). There are no particular limitations on the method of forming the lens 90b. For example, a thermoplastic material can be deposited on the scattering pattern 93 to form a light-transmitting layer. For example, the thermoplastic material can include photoresist, polyester, acrylic, epoxy resin, etc. The shape of the light-transmitting layer can be, for example, cylindrical. Then, for example, a hot reflow process can be performed to shape the cylindrical light-transmitting layer into, for example, a dome-shaped lens. The curvature of the lens 90b can be controlled by the surface energy of the scattering pattern 93, the contact angle of the light-transmitting layer, the thickness and width of the light-transmitting layer, the hot reflow process temperature, etc. Figure 4 The light-transmitting insulating layers 91 and 92 shown can be implemented by light-transmitting insulating layers 401 and 403, respectively. As a result, it is possible to manufacture... Figure 5 The light-emitting device 1c shown is shown.

[0110] Figure 11 This is a schematic diagram illustrating an embodiment of the display device. (Refer to...) Figure 11The display device may include a display panel 7110 and a controller 7160. The display panel 7110 may have a light-emitting structure 7112 and a driver circuit 7115 for turning the light-emitting structure 7112 on and off. The light-emitting structure 7112 may include multiple components as shown above. Figures 1 to 5 The light-emitting devices described. Multiple light-emitting devices can be arranged, for example, in a two-dimensional array. The driver circuit 7115 can have multiple switching elements for individually turning the multiple light-emitting devices on and off. The controller 7160 can input on / off signals for the multiple light-emitting devices to the driver circuit 7115 based on an image signal.

[0111] Figure 12 This is a block diagram illustrating an embodiment of an electronic device including a display. (See reference...) Figure 12 Electronic device 8201 can be provided within a network environment 8200. In the network environment 8200, electronic device 8201 can communicate with another electronic device 8202 via a first network 8298 (e.g., a short-range wireless communication network), or with another electronic device 8204 or a server 8208 via a second network 8299 (e.g., a long-range wireless communication network). Electronic device 8201 can communicate with electronic device 8204 via server 8208. Electronic device 8201 may include a processor 8220, a memory 8230, an input device 8250, an audio output device 8255, a display device 8260, an audio module 8270, a sensor module 8276, an interface 8277, a haptic module 8279, a camera module 8280, a power management module 8288, a battery 8289, a communication module 8290, a user identification module 8296, and / or an antenna module 8297. In electronic device 8201, some of these components may be omitted, or other components may be added. Some of these components may be implemented as a single integrated circuit. For example, sensor module 8276 (e.g., fingerprint sensor, iris sensor, or illuminance sensor) may be implemented by embedding it in display device 8260 (e.g., display).

[0112] Processor 8220 can run software (e.g., program 8240) to control one or more other components (e.g., hardware or software components) connected to electronic device 8201 and perform various data processing or calculations. As part of the data processing or calculations, processor 8220 can load commands and / or data received from other components (e.g., sensor module 8276 or communication module 8290) into volatile memory 8232, process the commands and / or data stored in volatile memory 8232, and store the resulting data in non-volatile memory 8234. Processor 8220 may include a main processor 8221 (e.g., a central processing unit or application processor) and an auxiliary processor 8223 (e.g., a graphics processing unit, image signal processor, sensor hub processor, or communication processor) that can operate independently or in conjunction with the main processor 8221. The auxiliary processor 8223 may consume less power than the main processor 8221 and may perform dedicated functions.

[0113] When the main processor 8221 is inactive (e.g., in sleep mode), the auxiliary processor 8223 may control, on behalf of the main processor 8221, the functions and / or states associated with some components of the electronic device 8201 (e.g., display device 8260, sensor module 8276, or communication module 8290). Alternatively, when the main processor 8221 is active (e.g., in application running mode), the auxiliary processor 8223 may work with the main processor 8221 to control the functions and / or states associated with some components of the electronic device 8201 (e.g., display device 8260, sensor module 8276, or communication module 8290). The auxiliary processor 8223 (e.g., an image signal processor or a communication processor) may also be implemented as part of other functionally related components (e.g., camera module 8280 or communication module 8290).

[0114] Memory 8230 may store various data used by components of electronic device 8201 (e.g., processor 8220 or sensor module 8276). The data may include, for example, software (e.g., program 8240) and input and / or output data for commands associated with the software. Memory 8230 may include volatile memory 8232 and / or non-volatile memory 8234.

[0115] The program 8240 can be stored as software in the memory 8230 and may include an operating system 8242, middleware 8244 and / or application 8246.

[0116] Input device 8250 can receive commands and / or data from an external source (e.g., a user) to be used by components of electronic device 8201 (e.g., processor 8220). Input device 8250 may include a remote control, microphone, mouse, keyboard, and / or digital pen (e.g., stylus).

[0117] Audio output device 8255 can output audio signals to the outside of electronic device 8201. Audio output device 8255 may include a speaker and / or a receiver. The speaker can be used for general purposes, such as reproducing multimedia or recording, and the receiver can be used to receive incoming calls. The receiver can be integrated into the speaker or can be implemented as a separate, independent device.

[0118] Display device 8260 can visually provide information to the outside of electronic device 8201. Display device 8260 may include, for example, a display, a holographic device, or a projector, and control circuitry for controlling the corresponding device. Display device 8260 may include the above-mentioned references. Figure 11 The described display device 8260 may include touch circuitry configured to detect a touch and / or sensor circuitry (e.g., a pressure sensor) configured to measure the intensity of the force generated by the touch.

[0119] The audio module 8270 can convert sound into electrical signals and vice versa. The audio module 8270 can obtain sound through the input device 8250, or output sound through the audio output device 8255 and / or through the speaker and / or headphones of another electronic device (e.g., electronic device 8202) directly or wirelessly connected to the electronic device 8201.

[0120] Sensor module 8276 can detect the operating state of electronic device 8201 (e.g., power or temperature) or external environmental state (e.g., user state) and generate electrical signals and / or data values ​​corresponding to the detected state. Sensor module 8276 may include gesture sensors, gyroscope sensors, atmospheric pressure sensors, magnetic sensors, accelerometers, grip sensors, proximity sensors, color sensors, infrared (IR) sensors, biometric sensors, temperature sensors, humidity sensors, and / or illuminance sensors.

[0121] Interface 8277 may support one or more specified protocols that can be used to connect electronic device 8201 directly or wirelessly to external electronic devices (e.g., electronic device 8202). Interface 8277 may include a High Definition Multimedia Interface (HDMI) port, a Universal Serial Bus (USB) interface, a Secure Digital (SD) card interface, and / or an audio interface.

[0122] Connection end 8278 may include a connector through which electronic device 8201 can be physically connected to another electronic device (e.g., electronic device 8202). Connection end 8278 may include an HDMI connector, a USB connector, an SD card connector, and / or an audio connector (e.g., a headphone connector).

[0123] The haptic module 8279 can convert electrical signals into mechanical stimuli (e.g., vibration or movement) or electrical stimuli that can be perceived by a user through touch or kinesthesia. The haptic module 8279 may include a motor, a piezoelectric element, and / or an electrical stimulation device.

[0124] Camera module 8280 can capture still or moving images. Camera module 8280 may include a lens assembly comprising one or more lenses, an image sensor, an image signal processor, and / or a flash. The lens assembly included in camera module 8280 can collect light emitted from an object to be captured in an image.

[0125] The power management module 8288 can manage the power supplied to the electronic device 8201. The power management module 8288 can be implemented as part of a power management integrated circuit (PMIC).

[0126] Battery 8289 can power components of electronic device 8201. Battery 8289 may include a non-rechargeable primary battery, a rechargeable secondary battery, and / or a fuel cell.

[0127] Communication module 8290 can support the establishment of direct (wired) communication channels and / or wireless communication channels between electronic device 8201 and another electronic device (e.g., electronic device 8202, electronic device 8204, or server 8208), and communication through the established communication channels. Communication module 8290 may include one or more communication processors that operate independently of processor 8220 (e.g., application processor) and support direct or wireless communication. Communication module 8290 may include wireless communication module 8292 (e.g., cellular communication module, short-range wireless communication module, or Global Navigation Satellite System (GNSS) communication module) and / or wired communication module 8294 (e.g., local area network (LAN) communication module or power line communication module). The corresponding communication module can communicate with other electronic devices via a first network 8298 (e.g., a short-range communication network such as Bluetooth, Wi-Fi Direct, or Infrared Data Association (IrDA)) or a second network 8299 (e.g., a long-range communication network such as a cellular network, the Internet, or a computer network (e.g., a LAN or a wide area network (WAN))). These various types of communication modules can be integrated into a single component (e.g., a single chip) or can be implemented as multiple separate components (e.g., multiple chips). The wireless communication module 8292 can identify and verify electronic devices 8201 within communication networks such as the first network 8298 and / or the second network 8299 by using user information (e.g., the International Mobile Subscriber Identity (IMSI)) stored in the user identification module 8296.

[0128] Antenna module 8297 can transmit signals and / or power to or from an external source (e.g., another electronic device). Antenna module 8297 may include an antenna, which may include a radiator made of conductive patterns on a substrate (e.g., a printed circuit board (PCB)). Antenna module 8297 may include one or more antennas. In the case where antenna module 8297 includes multiple antennas, communication module 8290 can select an antenna suitable for use in a communication scheme in a communication network such as a first network 8298 and / or a second network 8299. Signals and / or power can be transmitted or received between communication module 8290 and other electronic devices via the selected antenna. In addition to antennas, other components (e.g., radio frequency integrated circuits (RFICs)) may also be included as part of antenna module 8297.

[0129] Some components can connect to each other and exchange signals (e.g., commands or data) through communication schemes between peripheral devices (e.g., buses, general purpose input / output (GPIO), serial peripheral interfaces (SPI), or mobile industrial processor interfaces (MIPI)).

[0130] Commands or data can be sent or received between electronic device 8201 and external electronic device 8204 via server 8208 connected to the second network 8299. Electronic devices 8202 and 8204 may be of the same or different type as electronic device 8201. All or some of the operations performed by electronic device 8201 may be performed by one or more electronic devices (e.g., electronic device 8202, electronic device 8204, and server 8208). For example, when electronic device 8201 wants to perform a function or service, it may request one or more other electronic devices to perform part or all of the function or service, instead of performing it itself. The one or more other electronic devices receiving the request may perform additional functions or services related to the request and send the execution result to electronic device 8201. For this purpose, cloud computing technology, distributed computing technology, and / or client-server computing technology can be used.

[0131] The electronic device 8201 described above can be applied to various devices. Depending on the function of the device, various components of the electronic device 8201 can be appropriately modified, and components suitable for performing the function of the device can be added. Example applications of the electronic device 8201 will be described below.

[0132] Figure 13 An embodiment of a mobile device as an example application of an electronic device is illustrated. The mobile device 9100 may include a display device 9110. The display device 9110 may include the components described above. Figure 11 The display device described. The display device 9110 may have a foldable structure, such as, for example, a multi-foldable structure.

[0133] Figure 14 An embodiment of an automotive head-up display (HUD) as an example application of an electronic device is illustrated. The automotive HUD 9200 may include a display 9210 provided in a region of the vehicle and an optical path changing member 9220 configured to alter the optical path to allow the driver to view an image generated by the display 9210. The display 9210 may include the components described above. Figure 11 The described display device.

[0134] Figure 15 An embodiment of augmented reality (AR) glasses or virtual reality (VR) glasses as an example application of an electronic device is illustrated. AR glasses (or VR glasses) 9300 may include a projection system 9310 configured to form an image and elements 9320 configured to guide the image from the projection system 9310 to the user's eyes. Figure 11 The described display device.

[0135] Figure 16 An embodiment of a large signage display as an example application of an electronic device is illustrated. The signage display 9400 may include the above-described embodiment. Figure 11 The described display device. The signage display 9400 can be used for outdoor advertising displaying digital information, and the advertising content can be controlled via a communication network, etc. The signage display 9400 can be, for example, referred to above... Figure 12 The electronic device described is used to achieve this.

[0136] Figure 17 An embodiment of a wearable display as an example application of an electronic device is illustrated. The wearable display 9500 may include the above-described embodiment. Figure 11 The described display device. The wearable display 9500 can be referenced above. Figure 12 The electronic device described is used to achieve this.

[0137] The light-emitting device according to the embodiments, or the display device including the light-emitting device, can also be applied to various products such as rollable televisions (TVs) or stretchable displays.

[0138] Although an exemplary embodiment of a light-emitting device according to the present disclosure has been described above with reference to the accompanying drawings, the embodiments are non-limiting examples, and those skilled in the art will understand that various modifications and equivalent embodiments are included within the scope of the present disclosure.

[0139] According to embodiments of this disclosure, by reducing the number of electrodes with conductive path structures, a light-emitting device with improved luminous efficiency and a display device employing the light-emitting device can be realized.

[0140] It should be understood that the exemplary embodiments described herein should be considered in a descriptive sense only and not for limiting purposes. The description of features or aspects within each embodiment should generally be considered applicable to other similar features or aspects in other embodiments of this disclosure. Although one or more exemplary embodiments have been described with reference to the accompanying drawings, those skilled in the art will understand that various changes in form and detail may be made therein without departing from the spirit and scope of this disclosure.

[0141] This application is based on and claims priority to Korean Patent Application No. 10-2024-0149925, filed on October 29, 2024, with the Korean Intellectual Property Office, the disclosure of which is incorporated herein by reference in its entirety.

Claims

1. A light-emitting device, comprising: The light-emitting unit includes a first light-emitting structure, a second light-emitting structure, and a third light-emitting structure that are stacked sequentially and configured to emit light of different wavelengths. Each of the first light-emitting structure, the second light-emitting structure, and the third light-emitting structure includes a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer that are stacked sequentially. A first individual electrode is located on the lower surface of the light-emitting unit and is in contact with the first conductive type semiconductor layer of the first light-emitting structure. A second separate electrode is located on the lower surface of the light-emitting unit and is in contact with the first conductivity type semiconductor layer of the second light-emitting structure. A third separate electrode is located on the lower surface of the light-emitting unit and is in contact with the first conductivity type semiconductor layer of the third light-emitting structure. A common electrode is located on the side surface of the light-emitting unit and contacts the side surface of the second conductivity type semiconductor layer of each of the first, second, and third light-emitting structures; and An insulating layer is provided to insulate the side surfaces of the first conductivity type semiconductor layer and the active layer of each of the first light-emitting structure, the second light-emitting structure, and the third light-emitting structure from the common electrode. Wherein, at least two of the first individual electrode, the second individual electrode, and the third individual electrode include conductive pathway structures.

2. The light-emitting device according to claim 1, wherein, The side surfaces of the first conductivity type semiconductor layer and the active layer of each of the first light-emitting structure, the second light-emitting structure and the third light-emitting structure are recessed inward from the side surface of the second conductivity type semiconductor layer of each of the first light-emitting structure, the second light-emitting structure and the third light-emitting structure.

3. The light-emitting device according to claim 2, wherein, The side surface of the first conductivity type semiconductor layer and the active layer of each of the first light-emitting structure, the second light-emitting structure and the third light-emitting structure forms a step with a length of 0.5 μm or less from the side surface of the second conductivity type semiconductor layer of each of the first light-emitting structure, the second light-emitting structure and the third light-emitting structure.

4. The light-emitting device according to claim 1, wherein, The common electrode surrounds the side surface of the light-emitting unit.

5. The light-emitting device according to claim 1, wherein, The common electrode extends to the upper surface of the light-emitting unit.

6. The light-emitting device according to claim 1, wherein, The common electrode comprises a transparent electrode material.

7. The light-emitting device according to claim 1, wherein, The first individual electrode includes a first electrode pad, which is in contact with the lower surface of the first conductivity type semiconductor layer of the first light-emitting structure. The second separate electrode includes: The second electrode pad is on the lower surface of the light-emitting unit; and The second conductive path electrically connects the second electrode pad to the first conductive type semiconductor layer of the second light-emitting structure, and The third separate electrode includes: The third electrode pad is located on the lower surface of the light-emitting unit; and The third conductive path electrically connects the third electrode pad to the first conductive type semiconductor layer of the third light-emitting structure.

8. The light-emitting device according to claim 1, wherein... The first individual electrode includes: The first electrode pad is located on the lower surface of the light-emitting unit; as well as A first conductive path electrically connects the first electrode pad to the first conductive type semiconductor layer of the first light-emitting structure; The second separate electrode includes: The second electrode pad is on the lower surface of the light-emitting unit; and A second conductive path electrically connects the second electrode pad to the first conductive type semiconductor layer of the second light-emitting structure; and The third separate electrode includes: The third electrode pad is located on the lower surface of the light-emitting unit; and The third conductive path electrically connects the third electrode pad to the first conductive type semiconductor layer of the third light-emitting structure.

9. The light-emitting device according to claim 1, further comprising: A reflective layer surrounding the side surface of the light-emitting unit; as well as A passivation layer is used to insulate the common electrode from the reflective layer.

10. The light-emitting device according to claim 1, wherein, The side surface of the light-emitting unit is parallel to the stacking direction of the first light-emitting structure, the second light-emitting structure, and the third light-emitting structure.

11. The light-emitting device according to claim 1, wherein, The side surface of the light-emitting unit is inclined to gradually extend outward from the first light-emitting structure toward the third light-emitting structure.

12. The light-emitting device according to claim 1, further comprising a scattering pattern on the upper surface of the light-emitting unit.

13. The light-emitting device according to claim 1, further comprising a lens on the upper surface of the light-emitting unit.

14. The light-emitting device according to claim 1, wherein, The third light-emitting structure is configured to emit red light.

15. The light-emitting device according to claim 14, wherein, The first light-emitting structure and the second light-emitting structure are configured to emit blue light and green light, respectively.

16. A light-emitting device, comprising: The light-emitting unit includes a plurality of light-emitting structures stacked sequentially, wherein each of the plurality of light-emitting structures includes a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer stacked sequentially. Multiple individual electrodes are disposed on the lower surface of the light-emitting unit and respectively in contact with the first conductive type semiconductor layer of the multiple light-emitting structures, wherein at least one of the multiple individual electrodes includes a conductive path structure; A common electrode, on the side surface of the light-emitting unit, contacts the side surface of the second conductivity type semiconductor layer of each of the plurality of light-emitting structures; and An insulating layer is provided to insulate the side surfaces of the first conductivity type semiconductor layer and the active layer of each of the plurality of light-emitting structures from the common electrode.

17. The light-emitting device according to claim 16, wherein, The uppermost of the plurality of light-emitting structures is configured to emit red light.

18. The light-emitting device according to claim 16, wherein, The side surfaces of the first conductivity type semiconductor layer and the active layer of each of the plurality of light-emitting structures are recessed inward from the side surface of the second conductivity type semiconductor layer of each of the plurality of light-emitting structures.

19. The light-emitting device according to claim 16, further comprising: A reflective layer surrounding the side surface of the light-emitting unit; as well as A passivation layer is used to insulate the common electrode from the reflective layer.

20. A display device, comprising: The display panel includes: A plurality of light-emitting devices, each of the plurality of light-emitting devices comprising: The light-emitting unit includes a plurality of light-emitting structures stacked sequentially, wherein each of the plurality of light-emitting structures includes a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer stacked sequentially. Multiple individual electrodes are disposed on the lower surface of the light-emitting unit and respectively in contact with the first conductive type semiconductor layer of the multiple light-emitting structures, wherein at least one of the multiple individual electrodes includes a conductive path structure; A common electrode, on the side surface of the light-emitting unit, contacts the side surface of the second conductivity type semiconductor layer of each of the plurality of light-emitting structures; and An insulating layer is provided to insulate the side surfaces of the first conductivity type semiconductor layer and the active layer of each of the plurality of light-emitting structures from the common electrode. A driver circuit configured to turn the plurality of light-emitting devices on and off; and The controller is configured to input on / off signals for the plurality of light-emitting devices to the driver circuit based on the image signal.

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