Display panel and display device

Abstract

The invention provides a display panel and a display device. The display panel comprises a driving substrate, a light-emitting carrier plate and a thermoelectric conversion unit. The driving substrate includes a driving circuit layer and a plurality of driving electrodes. The light-emitting carrier plate comprises a glass substrate which is arranged on the driving substrate and is provided with a plurality of electrode through holes corresponding to the driving electrodes; the light-emitting units are arranged on the side, away from the driving substrate, of the glass substrate in an array mode and electrically connected with the corresponding driving electrodes through the electrode through holes. The thermoelectric conversion units are arranged between the adjacent light-emitting units, one side of each thermoelectric conversion unit is close to the light-emitting units, and the other side is close to the driving substrate; and the thermoelectric conversion unit is used for generating a potential difference under the action of a temperature difference between the driving substrate and the light-emitting unit, and is also used for generating a temperature difference between one side close to the light-emitting unit and one side close to the driving substrate under the action of driving current. The display panel can improve the influence of the temperature difference between the light-emitting carrier plate and the driving substrate on the characteristics of the driving device and the light-emitting efficiency of the light-emitting unit.

Description

Display panel and display device Technical Field

[0001] This application relates to the field of display technology, and in particular to a display panel and display device. Background Technology

[0002] Monocrystalline silicon driving backplanes are driving substrates formed using semiconductor devices fabricated using Complementary Metal Oxide Semiconductor (CMOS) technology as driving units. Compared to conventional Active-Matrix Organic Light-Emitting Diode (AMOLED) panels that use amorphous silicon, microcrystalline silicon, or low-temperature polycrystalline silicon thin-film transistors as backplanes, monocrystalline silicon driving backplanes exhibit higher carrier mobility. Therefore, silicon-based organic light-emitting diode (OLED) display panels are currently the highest-performing display panel type used in AR / VR products.

[0003] Currently, silicon-based OLED display panels integrate the traditionally externally bonded display chip into a silicon-based driving backplane. The fabrication method involves depositing OLED light-emitting devices onto a silicon-based driving substrate. Specifically, the process involves first depositing an anode, then creating a pixel definition layer, followed by the sequential deposition of an organic light-emitting layer and a cathode. This allows for the fabrication of smaller pixel units, achieving display detail exceeding retina-level precision, and offering numerous advantages such as high resolution, high integration, low power consumption, small size, and light weight.

[0004] However, in actual use, the light-emitting device layer or driving substrate is prone to heat generation, which can easily lead to a large temperature difference between the light-emitting device layer and the driving substrate. Excessive temperature will affect the characteristics of silicon-based devices and the luminous efficiency of the light-emitting unit. Summary of the Invention

[0005] This application provides a display panel designed to solve the problem in the prior art where the light-emitting device layer or the driving substrate easily heats up, resulting in a large temperature difference between the two and affecting the characteristics of silicon-based devices and the luminous efficiency of the light-emitting unit.

[0006] To address the aforementioned technical problems, the first technical solution provided in this application is: to provide a display panel. The display panel includes:

[0007] A driving substrate includes a driving circuit layer and a plurality of driving electrodes electrically connected to the driving circuit layer.

[0008] The light-emitting substrate includes:

[0009] A glass substrate, disposed on a driving substrate, has multiple electrode vias corresponding to driving electrodes;

[0010] The light-emitting units are arranged in an array on the side of the glass substrate away from the driving substrate, and are electrically connected to the corresponding driving electrodes through electrode vias;

[0011] The display panel also includes a thermoelectric conversion unit disposed between adjacent light-emitting units, with one side of the thermoelectric conversion unit close to the light-emitting unit and the other side close to the driving substrate;

[0012] The thermoelectric conversion unit is used to generate a potential difference under the effect of the temperature difference between the driving substrate and the light-emitting unit, and also to generate a temperature difference between the side near the light-emitting unit and the side near the driving substrate under the action of the driving current.

[0013] In some embodiments, the glass substrate is further provided with thermoelectric vias, which are located between adjacent electrode vias;

[0014] The thermoelectric conversion unit includes a first electrode, a thermoelectric conversion layer, and a second electrode. At least a portion of the thermoelectric conversion layer is disposed in a thermoelectric via. The first electrode is disposed on the side of the thermoelectric conversion layer away from the driving substrate and is in contact with the thermoelectric conversion layer to form an electrical connection. The second electrode is disposed on the driving substrate and is in contact with the thermoelectric conversion layer to form an electrical connection.

[0015] In some embodiments, the light-emitting carrier further includes a pixel definition layer disposed on a glass substrate, the pixel definition layer having a plurality of pixel openings corresponding one-to-one with the light-emitting units; along the direction of the glass substrate away from the driving substrate, an anode electrode, a light-emitting layer and a cathode electrode are sequentially stacked in the pixel openings to form a light-emitting unit;

[0016] The pixel definition layer also has thermoelectric openings, which are located between adjacent pixel openings and whose orthogonal projection on the glass substrate covers the thermoelectric vias; the first electrode is disposed in the thermoelectric opening and is in contact with the thermoelectric conversion layer.

[0017] In some embodiments, the cathode electrode extends out of the pixel opening and extends along the side surface of the pixel definition layer away from the glass substrate into the thermoelectric opening, and is connected to the adjacent cathode electrode.

[0018] The cathode electrode also serves as the first electrode, forming an electrical connection with the thermoelectric conversion layer; or, the cathode electrode forms an electrical connection with the first electrode.

[0019] In some embodiments, the light-emitting substrate further includes a conductive isolation structure, which includes a conductive layer and an insulating top; the conductive layer is disposed on the side of the pixel definition layer away from the glass substrate, surrounds the pixel opening, and its orthographic projection on the glass substrate covers the orthographic projection of the thermoelectric opening on the glass substrate; the insulating top is disposed on the surface of the conductive layer away from the pixel definition layer, blocks the conductive layer, and extends beyond the conductive layer in a direction parallel to the pixel definition layer; the cathode electrode extends to the conductive layer and contacts the conductive layer to form an electrical connection.

[0020] The conductive layer extends into the thermoelectric opening on the side near the thermoelectric conversion layer and contacts the thermoelectric conversion layer, serving as the first electrode; or, the conductive layer extends into the thermoelectric opening on the side near the thermoelectric conversion layer and contacts the first electrode to form an electrical connection.

[0021] In some embodiments, the thermoelectric conversion layer fills the thermoelectric via and extends the thermoelectric via in the radial direction; the second electrode extends at least partially into the thermoelectric via on the side near the thermoelectric conversion layer and is embedded in the thermoelectric conversion layer.

[0022] The first electrode is disposed on the side of the thermoelectric conversion layer away from the driving substrate and is in contact with the thermoelectric conversion layer; or, the first electrode extends at least partially into the thermoelectric via on the side near the thermoelectric conversion layer and is embedded in the thermoelectric conversion layer.

[0023] In some embodiments, the light-emitting substrate is divided into multiple interconnected thermoelectric conversion zones, each of which is provided with at least two light-emitting units and at least one thermoelectric conversion unit; at least one thermoelectric conversion unit is evenly distributed in the thermoelectric conversion zone.

[0024] In some embodiments, the material of the thermoelectric conversion layer is a multi-period heterojunction thermoelectric material; the spacing between the thermoelectric vias and adjacent electrode vias is greater than 1 μm.

[0025] In some embodiments, when the temperature difference between the light-emitting unit and the driving substrate is greater than a first threshold, a potential difference is generated between the first electrode and the second electrode.

[0026] When the temperature of the light-emitting unit is less than the second threshold, a driving current is input to the first electrode and the second electrode to make the temperature of the thermoelectric conversion layer on the side in contact with the first electrode higher than the temperature on the side in contact with the second electrode, thereby raising the temperature of the light-emitting unit.

[0027] To address the aforementioned technical problems, the second technical solution provided in this application is: to provide a display device. The display device includes:

[0028] The display panel is the display panel provided by the above technical solution;

[0029] The control circuit board is electrically connected to the display panel and is used to control the display panel to display corresponding images, control the electrical energy generated by the thermoelectric conversion unit under the action of temperature difference, and control the temperature difference generated by the thermoelectric conversion unit on both sides.

[0030] The beneficial effects of this application are as follows: Unlike existing technologies, this application provides a display panel and display device. The display panel includes a driving substrate and a light-emitting carrier. By making the light-emitting carrier include a glass substrate and light-emitting units disposed on the glass substrate, and by placing the glass substrate on the driving substrate, a glass substrate is further disposed between the light-emitting units and the driving substrate. The light-emitting units are fabricated on the glass substrate, which protects the driving circuit layer on the driving substrate, thereby avoiding the impact and damage to the driving circuit layer caused by directly fabricating the light-emitting units on the driving substrate, and improving product yield. By opening electrode vias in the glass substrate, the light-emitting substrate is electrically connected to the corresponding driving electrodes on the driving substrate through the electrode vias to achieve signal connection, thereby displaying the corresponding image. Furthermore, by placing a thermoelectric conversion unit between adjacent light-emitting units, with one side of the thermoelectric conversion unit close to the light-emitting unit and the other side close to the driving substrate, a potential difference can be generated when a temperature difference occurs between the driving substrate and the light-emitting unit. This temperature difference can then be used to convert thermal energy into electrical energy, which can be stored or utilized. This utilizes the temperature difference between the driving substrate and the light-emitting unit and also mitigates the impact of this temperature difference on the characteristics of the silicon-based device, thus reducing the luminous efficiency of the light-emitting unit. Simultaneously, by applying a driving current to the thermoelectric conversion unit, a temperature difference is generated between the side of the thermoelectric conversion unit close to the light-emitting unit and the side close to the driving substrate. This allows for heat dissipation or heating of the light-emitting unit or the driving substrate, thereby reducing the impact of excessively high or low temperatures on the lifespan and luminous efficiency of the light-emitting unit, as well as the impact of excessively high temperatures on the characteristics of the silicon-based driving devices on the driving substrate. Attached Figure Description

[0031] To more clearly illustrate the technical solutions in the embodiments of this application, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without any creative effort.

[0032] Figure 1 is a schematic diagram of the structure of the display panel provided in the first embodiment of this application;

[0033] Figure 2a is a schematic diagram of the first working principle of a thermoelectric conversion unit provided in an embodiment of this application;

[0034] Figure 2b is a schematic diagram of the second working principle of a thermoelectric conversion unit provided in an embodiment of this application;

[0035] Figure 3 is a schematic diagram of the structure of the electrode through hole and the thermoelectric through hole provided in an embodiment of this application;

[0036] Figure 4 is a schematic diagram of the structure of the display panel provided in the second embodiment of this application;

[0037] Figure 5 is a schematic diagram of the structure of the display panel provided in the third embodiment of this application;

[0038] Figure 6 is a schematic diagram of the structure of the display panel provided in the fourth embodiment of this application;

[0039] Figure 7 is a schematic diagram of the thermoelectric conversion unit provided in the first embodiment of this application;

[0040] Figure 8 is a schematic diagram of the thermoelectric conversion unit provided in the second embodiment of this application;

[0041] Figure 9 is a schematic diagram of the structure of a display device provided in an embodiment of this application.

[0042] Figure label:

[0043] 100. Display panel; 10. Driving substrate; 11. Silicon substrate; 12. Driving circuit layer; 13. Driving electrode; 14. Insulating protective layer; 20. Light-emitting carrier; 21. Glass substrate; 211. Electrode via; 212. Thermoelectric via; 213. Conductive part; 22. Light-emitting unit; 221. Anode electrode; 222. Light-emitting layer; 223. Cathode electrode; 23. Pixel definition layer; 231. Pixel opening; 232. Thermoelectric opening; 24. Conductive isolation structure; 241. Conductive layer; 242. Insulating top; 30. Thermoelectric conversion unit; 31. First electrode; 32. Thermoelectric conversion layer; 321. P-type thermoelectric material layer; 322. N-type thermoelectric material layer; 323. Intermediate electrode; 33. Second electrode; 200. Control circuit board; 201. Temperature control unit; 202. Energy storage unit; i1. Conversion current; i2. Driving current; d. Spacing. Detailed Implementation

[0044] The embodiments of this application will now be described in detail with reference to the accompanying drawings.

[0045] In the following description, specific details such as particular system architectures, interfaces, and technologies are presented for illustrative purposes rather than for limiting purposes, in order to provide a thorough understanding of this application.

[0046] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of this application, and not all of the embodiments. Based on the embodiments of this application, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the scope of protection of this application.

[0047] The terms "first," "second," and "third" in this application are for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of indicated technical features. Therefore, a feature defined as "first," "second," or "third" may explicitly or implicitly include at least one of that feature. In the description of this application, "multiple" means at least two, such as two, three, etc., unless otherwise explicitly specified. All directional indications (such as up, down, left, right, front, back, etc.) in the embodiments of this application are only used to explain the relative positional relationships and movements between components in a specific orientation (as shown in the figures). If the specific orientation changes, the directional indications also change accordingly. Furthermore, the terms "comprising" and "having," and any variations thereof, are intended to cover non-exclusive inclusion. For example, a process, method, system, product, or device that includes a series of steps or units is not limited to the listed steps or units, but may optionally include steps or units not listed, or may optionally include other steps or units inherent to these processes, methods, products, or devices.

[0048] In this document, the term "embodiment" means that a particular feature, structure, or characteristic described in connection with an embodiment may be included in at least one embodiment of this application. The appearance of this phrase in various places throughout the specification does not necessarily refer to the same embodiment, nor is it a separate or alternative embodiment mutually exclusive with other embodiments. It will be explicitly and implicitly understood by those skilled in the art that the embodiments described herein can be combined with other embodiments.

[0049] The present application will now be described in detail with reference to the accompanying drawings and embodiments.

[0050] Please refer to Figure 1, which is a schematic diagram of the structure of the display panel provided in the first embodiment of this application. In this embodiment, a display panel 100 is provided, which includes a driving substrate 10 and a light-emitting carrier 20. The driving substrate 10 and the light-emitting carrier 20 are aligned and electrically connected to drive the light-emitting substrate to display an image.

[0051] The driving substrate 10 includes a driving circuit layer 12 and a plurality of driving electrodes 13 electrically connected to the driving circuit layer 12. The driving circuit layer 12 includes a plurality of pixel driving circuits (not shown), each pixel driving circuit including a semiconductor driving device. In some embodiments, a CMOS device can be used as a semiconductor driving device to form a pixel driving circuit, thereby driving the light-emitting carrier 20 to emit light. The plurality of driving electrodes 13 are respectively electrically connected to the corresponding pixel driving circuit and a power signal to transmit corresponding driving signals to the light-emitting carrier 20.

[0052] In some embodiments, the driving substrate 10 further includes a silicon substrate 11 and an insulating protective layer 14. The silicon substrate 11 is used to support films such as the driving circuit layer 12, the driving electrode 13, and the insulating protective layer 14. In some embodiments, the silicon substrate 11 may be configured as a single-crystal silicon substrate. The insulating protective layer 14 is disposed on the side of the driving circuit layer 12 away from the silicon substrate 11, and has a plurality of openings, which are correspondingly disposed with respect to the driving electrode 13, thereby exposing the driving electrode 13. That is, the orthographic projection of the openings on the insulating protective layer 14 onto the driving circuit layer 12 overlaps with the projection of the corresponding driving electrode 13 onto the driving circuit layer 12, so that the openings face the driving electrode 13, thereby exposing the driving electrode 13.

[0053] The light-emitting substrate 20 includes a glass substrate 21 and light-emitting units 22 disposed on the side of the glass substrate 21 away from the driving substrate 10. The glass substrate 21 is disposed on the driving substrate 10 and has multiple electrode through-holes 211 corresponding to driving electrodes 13, allowing the light-emitting units 22 to be electrically connected to their respective driving electrodes 13 through the electrode through-holes 211. Specifically, in some embodiments, conductive portions 213 may be filled within the electrode through-holes 211. The conductive portions 213 are electrically connected to the corresponding light-emitting units 22 and driving electrodes 13 on opposite sides in the thickness direction of the glass substrate 21, thereby achieving the connection of driving signals. The light-emitting units 22 are arranged in an array on the side of the glass substrate 21 away from the driving substrate 10, and their orthogonal projections on the glass substrate 21 cover the conductive portions 213, forming an electrical connection through contact with the conductive portions 213. In some embodiments, the electrode through hole 211 may be a circular through hole or a rectangular through hole, or it may be a polygonal through hole or an elliptical through hole, etc. In the thickness direction of the glass substrate 21, the electrode through hole 211 may be a conical hole or a straight through hole, or it may be a double-sided horn-shaped hole with a small middle and large sides. The specific configuration can be set according to actual needs.

[0054] With the above arrangement, a glass substrate 21 is provided between the driving substrate 10 and the light-emitting unit 22. The light-emitting unit 22 is fabricated on the glass substrate 21. Therefore, during the fabrication process of the light-emitting unit 22, the glass substrate 21 can protect the driving circuit layer 12 on the driving substrate 10, thereby avoiding the impact and damage to the driving circuit layer 12 caused by directly fabricating the light-emitting unit 22 on the driving substrate 10, and improving the product yield. By opening electrode through-holes 211 on the glass substrate 21 and providing conductive parts 213 in the glass through-holes, the light-emitting unit 22 can be connected to the driving substrate 10 through the conductive parts 213 to achieve the image display function.

[0055] Furthermore, by using a glass substrate 21 as the substrate for the light-emitting carrier 20, compared to a silicon substrate 11, the glass substrate 21 has excellent insulation properties. Therefore, it is not necessary to fabricate an oxide insulating layer on the hole walls of the electrode vias 211 on the glass substrate 21, nor is it necessary to use specialized thin wafer holding technology, which reduces costs. Moreover, the glass substrate 21 is even cheaper than a silicon substrate, further reducing costs. Simultaneously, due to the excellent insulation properties of the glass substrate 21, electromagnetic coupling effects are less likely to occur during signal transmission, effectively reducing signal insertion loss and crosstalk, ensuring signal integrity. Furthermore, fabricating the light-emitting unit 22 on the glass substrate 21 facilitates the realization of a large-size light-emitting carrier 20. Moreover, by setting the light-emitting unit 22 on the glass substrate 21 to form the light-emitting carrier 20, the driving substrate 10 and the light-emitting carrier 20 can be fabricated separately, shortening the fabrication time and improving the production cycle.

[0056] The light-emitting unit 22 includes an anode electrode 221, a light-emitting layer 222, and a cathode electrode 223 sequentially stacked in the thickness direction of the glass substrate 21 away from the glass substrate 21. The orthogonal projection of the anode electrode 221 onto the glass substrate 21 covers the corresponding electrode through-hole 211, so as to contact the corresponding conductive part 213 to form an electrical connection. The cathode electrodes 223 of each light-emitting unit 22 are electrically connected to each other, and are electrically connected to the corresponding driving electrode 13 on the driving substrate 10 through the electrode through-hole in the edge region of the glass substrate 21. Specifically, they can be electrically connected to the corresponding driving electrode 13 through the conductive part 213 in the electrode through-hole. In some embodiments, the light-emitting unit 22 may include a first light-emitting unit 22, a second light-emitting unit 22, and a third light-emitting unit 22 with different light-emitting colors, for example, a red light-emitting unit 22, a green light-emitting unit 22, and a blue light-emitting unit 22, respectively, to achieve color display; specifically, the light-emitting color of the light-emitting unit 22 is determined by the light-emitting color of the light-emitting layer 222. Alternatively, in some other embodiments, the light-emitting unit 22 may be a light-emitting unit 22 of the same color, such as white, red, green, blue, or other colors, which can be set according to actual needs; for example, if the light-emitting unit 22 is white, grayscale display can be achieved by controlling the brightness of the light-emitting unit 22, and a color resist layer can be added above the light-emitting unit 22 to achieve color display. Specifically, the light-emitting unit 22 can be a current-driven light-emitting device, such as one or more of Organic Light Emitting Diode (OLED), Light Emitting Diode (LED), Mini Light Emitting Diode (Mini-LED), and Micro Light Emitting Diode (Micro-LED). In this embodiment, an OLED is used as an example for explanation.

[0057] In some embodiments, the light-emitting carrier 20 further includes an encapsulation layer for encapsulating the light-emitting unit 22 and a color filter layer disposed on the encapsulation layer. The color filter layer includes a black matrix and a plurality of color resist layers that correspond one-to-one with and are aligned with the light-emitting unit 22.

[0058] In actual use, the aforementioned silicon-based OLED display panel 100, because the light-emitting substrate 20 is located at the top of the display panel 100, i.e., on the side of the driving substrate 10 closer to the light-emitting side, is prone to absorbing heat and generating heat under extreme outdoor temperatures. Secondly, under prolonged heavy power loads, the driving substrate 10 is prone to power consumption overload and severe heat generation. Both of these situations will lead to a large temperature difference between the driving substrate 10 and the light-emitting substrate 20. Excessive temperature will affect the characteristics of the silicon-based driving devices of the driving substrate 10 and the luminous efficiency of the light-emitting units 22 of the light-emitting substrate 20. Moreover, under extreme outdoor temperatures, the light-emitting units 22 are easily affected by low temperatures, resulting in a decrease in luminous efficiency, which in turn reduces the brightness of the display panel 100 and causes display abnormalities.

[0059] To address the aforementioned issues, in this embodiment, the display panel 100 further includes a thermoelectric conversion unit 30 disposed between adjacent light-emitting units 22, with one side of the thermoelectric conversion unit 30 close to the light-emitting unit 22 and the other side close to the driving substrate 10. The thermoelectric conversion unit 30 is used to generate a potential difference under the influence of the temperature difference between the driving substrate 10 and the light-emitting unit 22, and also to generate a temperature difference between the side close to the light-emitting unit 22 and the side close to the driving substrate 10 under the influence of the driving current i2.

[0060] In this embodiment, a thermoelectric conversion unit 30 is arranged between adjacent light-emitting units 22, with one side of the thermoelectric conversion unit 30 close to the light-emitting unit 22 and the other side close to the driving substrate 10. When a temperature difference is generated between the driving substrate 10 and the light-emitting unit 22, a potential difference can be generated under the action of the temperature difference, thereby converting heat energy into electrical energy. The converted electrical energy can be stored or utilized to utilize the temperature difference generated between the driving substrate 10 and the light-emitting unit 22. At the same time, it can also alleviate the impact of the temperature difference on the characteristics of silicon-based devices and reduce the reduction of the luminous efficiency of the light-emitting unit 22. Meanwhile, by passing a driving current i2 through the thermoelectric conversion unit 30, a temperature difference is generated between the side of the thermoelectric conversion unit 30 close to the light-emitting unit 22 and the side close to the driving substrate 10 under the action of the driving current i2, so as to dissipate heat or heat the light-emitting unit 22 or the driving substrate 10, thereby reducing the impact of excessively high or low temperatures on the lifespan and luminous efficiency of the light-emitting unit 22, and the impact of excessively high temperatures on the characteristics of silicon-based driving devices on the driving substrate 10.

[0061] Specifically, the glass substrate 21 also has thermoelectric vias 212, which are located between adjacent electrode vias 211. The thermoelectric conversion unit 30 includes a first electrode 31, a thermoelectric conversion layer 32, and a second electrode 33. At least a portion of the thermoelectric conversion layer 32 is disposed in the thermoelectric via 212. The first electrode 31 is disposed on the side of the thermoelectric conversion layer 32 away from the driving substrate 10 and is in contact with the thermoelectric conversion layer 32 to form an electrical connection. The second electrode 33 is disposed on the driving substrate 10 and is in contact with the thermoelectric conversion layer 32 to form an electrical connection. The thermoelectric conversion layer 32 is made of a thermoelectric material, thereby enabling the thermoelectric conversion unit 30 to convert thermal energy and electrical energy into each other.

[0062] Please refer to Figure 2a, which is a schematic diagram of the first working principle of a thermoelectric conversion unit provided in an embodiment of this application. The working principle of the thermoelectric conversion unit 30 in converting thermal energy into electrical energy is based on the Seebeck effect. In the thermoelectric conversion layer 32, the diffusion rate of electrons is proportional to the temperature. Therefore, as long as the temperature difference between its two sides is maintained, the flow of electrons can be maintained, and a potential difference will be formed at both ends of the thermoelectric conversion layer 32.

[0063] As shown in Figure 2a, taking the simplest thermoelectric conversion layer 32 structure as an example, the thermoelectric conversion layer 32 includes at least a P-type thermoelectric material layer 321 and an N-type thermoelectric material layer 322. The P-type thermoelectric material layer 321 and the N-type thermoelectric material layer 322 are connected in series through an intermediate electrode 323. The first electrode 31 and the second electrode 33 are located at opposite ends of the thermoelectric conversion layer 32 and are electrically connected to the thermoelectric material layers. Based on the Seebeck effect, charge carriers (holes) inside the P-type thermoelectric material layer 321 migrate from the side away from the first electrode 31 toward the first electrode 31 to form a first potential difference across the P-type thermoelectric material layer 321; charge carriers (free electrons) inside the N-type thermoelectric material layer 322 migrate from the side away from the second electrode 33 toward the second electrode 33 to form a second potential difference across the N-type thermoelectric material layer 322; the potential difference between the first electrode 31 and the second electrode 33 is the sum of the first potential difference and the second potential difference. The conversion current i1 formed by the potential difference between the first electrode 31 and the second electrode 33 flows from the first electrode 31 to the second electrode 33 outside the thermoelectric conversion layer 32. An energy storage element can be connected between the first electrode 31 and the second electrode 33 to store electrical energy. The greater the temperature difference between the first electrode 31 and the second electrode 33, the faster the diffusion rate of charge carriers inside the thermoelectric conversion layer 32, and the greater the potential difference between the first electrode 31 and the second electrode 33, resulting in more converted electrical energy. The generated electrical energy can be stored through the energy storage element or connected to other electrical devices to provide power to them.

[0064] Please refer to Figure 2b, which is a schematic diagram of the second working principle of a thermoelectric conversion unit provided in an embodiment of this application. The thermoelectric conversion unit 30 converts electrical energy into heat energy based on the Peltier effect. When two different conductor materials form a thermocouple pair and a direct current is applied, heat absorption and heat release phenomena will occur at the corresponding joints of the thermocouple pair; the end that absorbs heat is the cold end, and the end that releases heat is the hot end; the cold end and the hot end can be interchanged by controlling the direction of the current.

[0065] Taking Figure 2b as an example, using the simplest thermoelectric conversion layer 32 structure, the thermoelectric conversion layer 32 includes at least a P-type thermoelectric material layer 321 and an N-type thermoelectric material layer 322. The P-type thermoelectric material layer 321 and the N-type thermoelectric material layer 322 are connected in series through an intermediate electrode 323. The first electrode 31 and the second electrode 33 are located at opposite ends of the thermoelectric conversion layer 32 and are electrically connected to the thermoelectric material layers. That is, the P-type thermoelectric material layer 321 and the N-type thermoelectric material layer 322 form a thermocouple pair. The opposite ends of the thermocouple pair serve as connectors, with one end close to the light-emitting unit 22 and the other end close to the driving circuit layer 12. When either the light-emitting unit 22 or the driving substrate 10 needs to be heated or cooled, a driving current i2 can be passed to the first electrode 31 and the second electrode 33. Under the action of the driving current i2, one end of the thermocouple pair absorbs heat, causing its temperature to decrease, while the other end releases heat, causing its temperature to increase, thereby heating or cooling the part that needs to be heated or cooled. For example, if the light-emitting unit 22 needs heat dissipation, the direction of the driving current i2 is controlled so that the side of the thermoelectric conversion unit 30 closest to the light-emitting unit 22 is the cold end; if the light-emitting unit 22 needs heating, the direction of the driving current i2 is controlled so that the side of the thermoelectric conversion unit 30 closest to the light-emitting unit 22 is the hot end. If the driving substrate 10 needs heat dissipation or heating, the direction of the driving current i2 can also be controlled so that the side closest to the driving circuit layer 12 is the cold end or the hot end.

[0066] In a specific embodiment, the thermoelectric conversion layer 32 can be made of a periodic multicycle heterojunction (PMHJ) thermoelectric material. The PMHJ structure is composed of alternating depositions of two different polymers, with each cycle containing two polymer layers and an interface layer exhibiting bulk heterogeneity. Furthermore, the PMHJ structure can be fabricated over a large area using a solution method, resulting in good uniformity. The thermoelectric conversion layer 32, fabricated using PMHJ thermoelectric material, exhibits excellent performance in terms of thermal conductivity, bending radius, normalized power density, large-area fabrication capability, and low processing temperature, leading to high thermoelectric conversion efficiency of the thermoelectric conversion unit 30, as well as high heat dissipation and heating efficiency.

[0067] Please refer to Figure 1. In this embodiment, the light-emitting carrier 20 further includes a pixel definition layer 23 disposed on the glass substrate 21. The pixel definition layer 23 has a plurality of pixel openings 231 corresponding one-to-one with the light-emitting units 22. Along the direction of the glass substrate 21 away from the driving substrate 10, an anode electrode 221, a light-emitting layer 222, and a cathode electrode 223 are sequentially stacked in the pixel openings 231 to form the light-emitting units 22. The pixel definition layer 23 is used to separate the anode electrode 221 and the light-emitting layer 222 of different light-emitting units 22, thereby preventing color cross-contamination between different light-emitting units 22.

[0068] The pixel definition layer 23 also has a thermoelectric opening 232, which is located between adjacent pixel openings 231, and its orthogonal projection on the glass substrate 21 covers the thermoelectric through-hole 212, that is, the thermoelectric opening 232 is connected to the corresponding heating through-hole 212. The first electrode 31 is disposed in the thermoelectric opening 232 and is in contact with the thermoelectric conversion layer 32 to form an electrical connection.

[0069] The cathode electrode 223 extends out of the pixel opening 231 and extends along the side surface of the pixel definition layer 23 away from the glass substrate 21 into the thermoelectric opening 232, and is connected to the adjacent cathode electrode 223. By making the cathode electrode 223 also serve as the first electrode 31 of the thermoelectric conversion unit 30, the structure of the display panel 100 is simplified, and there is no need to set an additional electrode layer.

[0070] With the above configuration, when a temperature difference is generated between the light-emitting carrier 20 and the driving substrate 10, a potential difference will be generated between the cathode electrode 223 and the second electrode 33 on the driving substrate 10 under the action of the temperature difference, thereby realizing the conversion of heat energy into electrical energy. The generated electrical energy can be stored in a storage element or provided to other electrical devices to utilize the temperature difference generated between the light-emitting carrier 20 and the driving substrate 10, thereby improving energy utilization and alleviating the temperature difference. At the same time, when the light-emitting carrier 20 or the driving substrate 10 needs to dissipate heat or heat, a driving current i2 can be passed between the cathode electrode 223 and the second electrode 33 to generate a temperature difference between the two sides of the thermoelectric conversion unit 30. By controlling the direction of the driving current i2, heat dissipation or heating on one side can be achieved. Specifically, the cathode electrode 223 can maintain the cathode potential signal. By controlling the potential of the second electrode 33, the direction of the driving current i2 entering the thermoelectric conversion unit 30 can be controlled. This ensures that the cathode signal of the cathode electrode 223 does not change while achieving heat dissipation or heating, so that the display panel 100 can display images normally.

[0071] Please refer to Figure 3, which is a schematic diagram of the structure of an electrode via and a thermoelectric via provided in an embodiment of this application. In this embodiment, the distance d between the thermoelectric via 212 and the adjacent electrode via 211 is at least greater than 1 μm. It should be noted that the adjacent electrode via 211 here refers to the electrode via 211 closest to the thermoelectric via 212. The distance d between them is defined as follows: on the line connecting the central axis of the thermoelectric via 212 and the central axis of the electrode via 211, the intersection point of the electrode via 211 and the connecting line is A, and the intersection point of the thermoelectric via 212 and the connecting line is B. The distance AB between points A and B is the distance d between the thermoelectric via 212 and the adjacent electrode via 211.

[0072] Specifically, provided that the distance d between the thermoelectric via 212 and the adjacent electrode via 211 is at least greater than 1 μm, the apertures of the electrode via 211 and the thermoelectric via 212 can be set according to actual needs. In a specific embodiment, the apertures of the electrode via 211 and the thermoelectric via 212 can be set according to the drilling process. For example, in the case of limited space, priority can be given to ensuring the aperture size of the electrode via 211, and the aperture size of the thermoelectric via 212 can be appropriately reduced, but the aperture size of the thermoelectric via 212 should still be maintained as much as possible to ensure thermoelectric conversion efficiency.

[0073] Please refer to Figure 4, which is a schematic diagram of the display panel structure provided in the second embodiment of this application. Unlike the first embodiment, in this embodiment, the first electrode 31 of the thermoelectric conversion unit 30 is disposed separately. Specifically, the first electrode 31 is disposed in the thermoelectric opening 232, located on the side of the thermoelectric conversion layer 32 away from the driving substrate 10, and forms an electrical connection with the thermoelectric conversion layer 32. The cathode electrode 223 extends out of the pixel opening 231 and extends along the surface of the pixel definition layer 23 away from the glass substrate 21 into the thermoelectric opening 232, so as to form an electrical connection with the first electrode 31.

[0074] In this embodiment, a first electrode 31 is separately provided as the electrode of the thermoelectric conversion unit 30. The material of the first electrode 31 can be a metal material with high conductivity, thereby improving the current carrying capacity and reducing voltage drop loss.

[0075] Please refer to Figure 5, which is a schematic diagram of the display panel structure provided in the third embodiment of this application. In this embodiment, the light-emitting substrate 20 further includes a conductive isolation structure 24, which is used to separate the light-emitting layers 222 of each light-emitting unit 22 to realize a pixel array and avoid pixel crosstalk problems. It is also used to conduct electricity between the cathode electrodes 223 of each light-emitting unit 22, so as to achieve a mesh connection between the cathode electrodes 223 of different light-emitting units 22 and realize the uniformity of the signal of the entire surface of the cathode electrodes 223.

[0076] The conductive isolation structure 24 includes a conductive layer 241 and an insulating top 242. The conductive layer 241 is disposed on the side of the pixel definition layer 23 away from the glass substrate 21, protrudes from the pixel definition layer 23, and surrounds the pixel opening 231. The insulating top 242 is disposed on the surface of the conductive layer 241 away from the pixel definition layer 23, blocks the conductive layer 241, and extends beyond the conductive layer 241 in a direction parallel to the pixel definition layer 23. The cathode electrode 223 extends to the conductive layer 241 and contacts the conductive layer 241 to form an electrical connection. That is, the portion of the top structure extending beyond the conductive layer 241 is suspended relative to the conductive layer 241, forming a suspended structure. In the fabrication process of the vapor-deposited light-emitting layer 222 and cathode electrode 223, due to the presence of the overhang structure, the organic light-emitting layer 222 and cathode electrode 223 can form a discontinuous deposition at the bottom of the pixel opening 231. After a single etching process to form a single light-emitting unit 22, an inorganic encapsulation layer can be used to encapsulate and protect the monochromatic light-emitting layer 222 and cathode electrode 223 to form an etching protection layer. Then, the fabrication of organic light-emitting layers 222 and cathode electrodes 223 of other colors is carried out one by one. After the patterning of the three-color organic light-emitting layers 222 and cathode electrodes 223 is completed, an organic encapsulation layer + an inorganic encapsulation layer can be used for overall encapsulation. When vapor-depositing the light-emitting layer 222 and cathode electrode 223, the edge range of each film layer in the light-emitting layer 222 can be adjusted by adjusting the vapor deposition angle. Multiple conductive isolation structures 24 are present, with adjacent conductive isolation structures 24 sharing the same side edge. This ensures that the spacing d between each light-emitting unit 22 is equal, which is beneficial for display uniformity and increasing the pixel aperture ratio 231. Specifically, the conductive isolation structure 24 is a ring-shaped structure, specifically matching the shape of the light-emitting unit 22, to prepare light-emitting units 22 with a predetermined shape.

[0077] In the direction perpendicular to the light-emitting carrier plate 20, the longitudinal cross-section of the sidewall of the conductive layer 241 can be trapezoidal, and the cross-section of the sidewall of the conductive structure in the direction parallel to the light-emitting carrier plate 20 gradually decreases in the direction close to the insulating top 242, so as to facilitate the contact setting of the cathode electrode 223 with the conductive layer 241.

[0078] The conductive layer 241 can be made of a metal or a conductive oxide. The metal can be a highly conductive metal such as copper (Cu), aluminum (Al), silver (Ag), or gold (Au), or an alloy thereof. The conductive oxide can be a highly conductive metal oxide such as indium tin oxide (ITO), indium zinc oxide (IZO), or indium gallium zinc oxide (IGZO). The conductive oxide film can coat the surface of the metal film to form a passivation protective layer, thus protecting the metal film.

[0079] Furthermore, the conductive layer 241 extends into the thermoelectric opening 232 and contacts the thermoelectric conversion layer 32 on the side near the thermoelectric conversion layer 32, thus serving as the first electrode 31. By making the cathode electrode 223 also serve as the first electrode 31 of the thermoelectric conversion unit 30, the structure of the display panel 100 is simplified, eliminating the need for an additional electrode layer.

[0080] In a specific embodiment, when the temperature difference between the light-emitting unit 22 and the driving substrate 10 is greater than a first threshold, a potential difference is generated between the first electrode 31 and the second electrode 33. This potential difference is then converted into electrical energy by the thermoelectric conversion unit 30. The converted electrical energy can be stored by an energy storage element, which can also act as a power source to provide power to other components, or directly supply the converted electrical energy to relevant components, thereby improving the efficient utilization of energy. Specifically, when the temperature difference between the light-emitting unit 22 and the driving substrate 10 is such that the potential difference between the first electrode 31 and the second electrode 33 of the thermoelectric conversion unit 30 is a set value, this temperature difference is the first threshold. The specific set value of the potential difference can be set according to actual needs, and there are no excessive limitations on this.

[0081] When the temperature of the light-emitting unit 22 is lower than the second threshold, a driving current i2 is input to the first electrode 31 and the second electrode 33 to make the temperature of the thermoelectric conversion layer 32 on the side in contact with the first electrode 31 higher than the temperature on the side in contact with the second electrode 33, thereby raising the temperature of the light-emitting unit 22. That is, when the temperature of the light-emitting unit 22 is too low, causing its luminous efficiency to decrease, a driving current i2 can be input to the first electrode 31 and the second electrode 33 to make the thermoelectric conversion layer 32 have a hot end on the side closer to the light-emitting unit 22 and a cold end on the opposite side, thus heating the light-emitting unit 22. The second threshold can be in the range of -40℃ to 0℃, and can be specifically set according to the decrease in the luminous efficiency of the light-emitting unit 22. For example, the temperature at which the luminous efficiency of the light-emitting unit 22 decreases by a% is set as the second threshold, and the range of a% can be 0 to 40%. For example, if a% is 20%, then when the luminous efficiency of the light-emitting unit 22 decreases by 20%, that is, when the luminous efficiency of the light-emitting unit 22 is 80% of the original, the temperature at this time is the second threshold.

[0082] For example, if the second threshold is set to -25°C, when the temperature of the light-emitting unit 22 close to the thermoelectric conversion unit 30 is lower than -25°C, a driving current i2 is input to the first electrode 31 and the second electrode 33 so that the thermoelectric conversion layer 32 heats up on the side close to the light-emitting unit 22, thereby heating the nearby light-emitting unit 22.

[0083] When the temperature of the light-emitting unit 22 exceeds the third threshold, a driving current i2 is input to the first electrode 31 and the second electrode 33 to lower the temperature of the thermoelectric conversion layer 32 on the side in contact with the first electrode 31, thereby cooling the light-emitting unit 22. That is, when the temperature of the light-emitting unit 22 is too low, causing a decrease in its luminous efficiency, a driving current i2 can be input to the first electrode 31 and the second electrode 33 to make the thermoelectric conversion layer 32 have a cold end on the side closer to the light-emitting unit 22 and a hot end on the opposite side. This allows the thermoelectric conversion layer 32 to absorb heat on the side closer to the light-emitting unit 22, thus dissipating heat and cooling the light-emitting unit 22. The third threshold can be set according to the heating condition of the light-emitting unit 22 and is not specifically limited thereto.

[0084] Similarly, when the temperature of a portion of the drive circuit layer 12 near the side of the thermoelectric conversion unit 30 that contacts the second electrode 33 exceeds the fourth threshold, a drive current i2 is input to the first electrode 31 and the second electrode 33 to lower the temperature of the thermoelectric conversion layer 32 on the side that contacts the second electrode 33, thereby cooling the drive circuit layer 12. That is, when the temperature of the drive circuit layer 12 is too high, a drive current i2 is input to the first electrode 31 and the second electrode 33 to allow the thermoelectric conversion layer 32 to absorb heat on the side near the drive circuit layer 12, thereby cooling the drive circuit layer 12. The fourth threshold can be set according to the characteristics of the driving device of the drive circuit layer 12, and is not specifically limited thereto.

[0085] Please refer to Figure 6, which is a schematic diagram of the display panel structure provided in the fourth embodiment of this application. Unlike the third embodiment, in this embodiment, the first electrode 31 of the thermoelectric conversion unit 30 is disposed separately. Specifically, the first electrode 31 is disposed in the thermoelectric opening 232, located on the side of the thermoelectric conversion layer 32 away from the driving substrate 10, and forms an electrical connection with the thermoelectric conversion layer 32. The conductive layer 241 extends into the thermoelectric opening 232 on the side near the thermoelectric conversion layer 32 and forms an electrical connection with the first electrode 31.

[0086] In this embodiment, a first electrode 31 is separately provided as the electrode of the thermoelectric conversion unit 30. The material of the first electrode 31 can be a metal material with high conductivity, thereby improving the current carrying capacity and reducing voltage drop loss.

[0087] Please refer to Figure 7, which is a schematic diagram of the thermoelectric conversion unit provided in the first embodiment of this application. The thermoelectric conversion layer 32 fills the thermoelectric via 212 and extends the thermoelectric via 212 in the radial direction. The second electrode 33 extends at least partially into the thermoelectric via 212 on the side near the thermoelectric conversion layer 32 and is embedded in the thermoelectric conversion layer 32. The first electrode 31 is disposed on the surface of the thermoelectric conversion layer 32 away from the driving substrate 10 and is in contact with the thermoelectric conversion layer 32.

[0088] In this embodiment, by filling the entire thermoelectric via 212 with the thermoelectric conversion layer 32 and extending the thermoelectric via 212 along both sides of the glass substrate 21 in the radial direction, the extension area on both sides of the thermoelectric conversion layer 32 is increased. This can improve the heat dissipation area of ​​the hot end and the heat absorption area of ​​the cold end of the thermoelectric conversion layer 32, that is, increase the heating area and heat dissipation area of ​​the thermoelectric conversion layer 32, and improve the energy conversion efficiency.

[0089] In this embodiment, the thermoelectric conversion layer 32 can be extended as much as possible without affecting the pixel aperture ratio 231, so as to further improve the energy conversion efficiency. Furthermore, by having the second electrode 33 at least partially extend into the thermoelectric via 212 on the side close to the thermoelectric conversion layer 32 and embedded in the thermoelectric conversion layer 32, the contact area between the second electrode 33 and the thermoelectric conversion layer 32 is increased, which can improve the bonding stability between the second electrode 33 and the thermoelectric conversion layer 32, and improve the bonding stability between the light-emitting carrier 20 and the driving substrate 10.

[0090] Please refer to Figure 8, which is a schematic diagram of the thermoelectric conversion unit provided in the second embodiment of this application. Unlike the embodiment in Figure 7, in this embodiment, the first electrode 31 extends at least partially into the thermoelectric via 212 on the side closest to the thermoelectric conversion layer 32 and is embedded in the thermoelectric conversion layer 32. That is, both the first electrode 31 and the second electrode 33 extend into the thermoelectric via 212 and are embedded in the thermoelectric conversion layer 32.

[0091] By adopting the above configuration, the contact area between the first electrode 31 and the thermoelectric conversion layer 32 can be increased, thereby improving the bonding stability between the first electrode 31 and the thermoelectric conversion layer 32; and further improving the structural stability of the thermoelectric conversion unit 30, as well as the bonding stability between the light-emitting carrier 20 and the driving substrate 10.

[0092] In the above embodiment, the light-emitting carrier 20 is divided into multiple interconnected thermoelectric conversion zones, and each thermoelectric conversion zone is provided with at least two light-emitting units 22 and at least one thermoelectric conversion unit 30; at least one thermoelectric conversion unit 30 is evenly distributed in the thermoelectric conversion zone.

[0093] This can be understood as not needing to create heating openings and set up thermoelectric conversion units 30 in the pixel definition layer 23 below each conductive layer 241. The light-emitting substrate 20 can be divided into multiple thermoelectric conversion zones, each containing m rows and n columns of light-emitting units 22, i.e., each thermoelectric conversion zone contains m×n light-emitting units 22, where m and n are both positive integers, and m×n is a positive integer greater than or equal to 2. Each thermoelectric conversion zone can be provided with at least one thermoelectric conversion unit 30 to heat the light-emitting units 22 within the thermoelectric conversion zone. For example, in one embodiment, each thermoelectric conversion zone has 2×2 light-emitting units 22 and one thermoelectric conversion unit 30, which is located at the center of the thermoelectric conversion zone. The distance between the thermoelectric conversion unit 30 and the center point of the four light-emitting units 22 is equal, so that the heating effect of the thermoelectric conversion unit 30 on each light-emitting unit 22 is more uniform. In another embodiment, each thermoelectric conversion zone has m×n light-emitting units 22, where m and n are greater than or equal to 3. Several (at least two) thermoelectric conversion units 30 are set in the thermoelectric conversion zone, and the several thermoelectric conversion units 30 are evenly distributed in the thermoelectric conversion zone to ensure the uniformity and efficiency of thermoelectric conversion.

[0094] Please refer to Figure 9, which is a schematic diagram of the structure of a display device provided in an embodiment of this application. In this embodiment, a display device is provided that can be used in display fields such as tablets, mobile phones, automotive displays, VR glasses, and lighting equipment.

[0095] The display device includes a display panel 100 and a control circuit board 200. The control circuit board 200 is electrically connected to the display panel 100 and is used to provide the display panel 100 with various drive signals, power signals and other drive signals required by the display panel 100, thereby controlling the display panel 100 to display corresponding images.

[0096] The specific structure and function of the display panel 100 are the same as or similar to those of the display panel 100 in the above embodiment, and can achieve the same technical effect. For details, please refer to the relevant introduction above. The control circuit board 200 is also used to control the electrical energy generated by the thermoelectric conversion unit 30 under the action of temperature difference and to control the temperature difference generated on the opposite sides of the thermoelectric conversion unit 30.

[0097] Specifically, the control circuit board 200 also includes a temperature control unit 201 and an energy storage unit 202; the temperature control unit 201 is electrically connected to the thermoelectric conversion unit 30 and is used to control the temperature difference between the side of the thermoelectric conversion unit 30 near the light-emitting unit 22 and the side near the driving substrate 10; the energy storage unit 202 is electrically connected to the temperature control unit 201 and the thermoelectric conversion unit 30, and the temperature control unit 201 is also used to control the energy storage unit 202 to store the electrical energy generated by the thermoelectric conversion unit 30.

[0098] The display device controls the collection of electrical energy generated by the thermoelectric conversion unit 30 under the action of temperature difference through the control circuit board 200, and controls the generation of temperature difference between the thermoelectric conversion unit 30 on both sides. It can control heating or cooling in real time and locally, so as to achieve directional collection and storage of energy or temperature compensation, thereby effectively improving the luminous efficiency of the display panel 100.

[0099] The above are merely embodiments of this application and do not limit the scope of patent protection of this application. Any equivalent structural or procedural changes made using the content of this application’s specification and drawings, or direct or indirect applications in other related technical fields, are similarly included within the scope of patent protection of this application.

Claims

1. A display panel, comprising: A driving substrate includes a driving circuit layer and a plurality of driving electrodes electrically connected to the driving circuit layer; A light-emitting substrate includes: a glass substrate disposed on a driving substrate, having a plurality of electrode through holes corresponding to the driving electrodes; and light-emitting units arranged in an array on the side of the glass substrate away from the driving substrate, and electrically connected to the corresponding driving electrodes through the electrode through holes; characterized in that the display panel further includes a thermoelectric conversion unit disposed between adjacent light-emitting units, with one side of the thermoelectric conversion unit close to the light-emitting unit and the other side close to the driving substrate; the thermoelectric conversion unit is used to generate a potential difference under the action of the temperature difference between the driving substrate and the light-emitting unit, and is also used to generate a temperature difference between the side close to the light-emitting unit and the side close to the driving substrate under the action of a driving current.

2. The display panel according to claim 1, characterized in that, The glass substrate also has thermoelectric vias located between adjacent electrode vias. The thermoelectric conversion unit includes a first electrode, a thermoelectric conversion layer, and a second electrode. At least a portion of the thermoelectric conversion layer is disposed in the thermoelectric via. The first electrode is disposed on the side of the thermoelectric conversion layer away from the driving substrate and is in contact with the thermoelectric conversion layer to form an electrical connection. The second electrode is disposed on the driving substrate and is in contact with the thermoelectric conversion layer to form an electrical connection.

3. The display panel according to claim 2, characterized in that, The light-emitting carrier also includes a pixel definition layer disposed on the glass substrate. The pixel definition layer has a plurality of pixel openings that correspond one-to-one with the light-emitting units. Along the direction away from the driving substrate on the glass substrate, an anode electrode, a light-emitting layer, and a cathode electrode are sequentially stacked in the pixel openings to form the light-emitting units. The pixel definition layer also has thermoelectric openings located between adjacent pixel openings, and the orthogonal projection on the glass substrate covers the thermoelectric through-holes. The first electrode is disposed in the thermoelectric opening and is in contact with the thermoelectric conversion layer.

4. The display panel according to claim 3, characterized in that, The cathode electrode extends out of the pixel opening and extends along the side surface of the pixel definition layer away from the glass substrate into the thermoelectric opening, and is connected to the adjacent cathode electrode; the cathode electrode also serves as the first electrode, and forms an electrical connection with the thermoelectric conversion layer; or, the cathode electrode forms an electrical connection with the first electrode.

5. The display panel according to claim 3, characterized in that, The light-emitting substrate further includes a conductive isolation structure, which includes a conductive layer and an insulating top. The conductive layer is disposed on the side of the pixel definition layer away from the glass substrate, surrounds the pixel opening, and its orthographic projection on the glass substrate covers the orthographic projection of the thermoelectric opening on the glass substrate. The insulating top is disposed on the surface of the conductive layer away from the pixel definition layer, blocks the conductive layer, and extends beyond the conductive layer in a direction parallel to the pixel definition layer. The cathode electrode extends to the conductive layer and contacts the conductive layer to form an electrical connection. The side of the conductive layer near the thermoelectric conversion layer extends into the thermoelectric opening and contacts the thermoelectric conversion layer, serving as the first electrode; or, the side of the conductive layer near the thermoelectric conversion layer extends into the thermoelectric opening and contacts the first electrode to form an electrical connection.

6. The display panel according to claim 4 or 5, characterized in that, The thermoelectric conversion layer fills the thermoelectric via and extends out of the thermoelectric via in the radial direction; the second electrode extends at least partially into the thermoelectric via on the side near the thermoelectric conversion layer and is embedded in the thermoelectric conversion layer; the first electrode is disposed on the surface of the thermoelectric conversion layer away from the driving substrate and is in contact with the thermoelectric conversion layer; or, the first electrode extends at least partially into the thermoelectric via on the side near the thermoelectric conversion layer and is embedded in the thermoelectric conversion layer.

7. The display panel according to claim 1, characterized in that, The light-emitting carrier is divided into multiple interconnected thermoelectric conversion zones. Each thermoelectric conversion zone is provided with at least two light-emitting units and at least one thermoelectric conversion unit. At least one thermoelectric conversion unit is evenly distributed in the thermoelectric conversion zone.

8. The display panel according to claim 2, characterized in that, The thermoelectric conversion layer is made of a multi-period heterojunction thermoelectric material; the distance between the thermoelectric via and the adjacent electrode via is greater than 1 μm.

9. The display panel according to claim 2, characterized in that, When the temperature difference between the light-emitting unit and the driving substrate is greater than a first threshold, a potential difference is generated between the first electrode and the second electrode. When the temperature of the light-emitting unit is less than the second threshold, the driving current is input to the first electrode and the second electrode to make the temperature of the thermoelectric conversion layer on the side in contact with the first electrode higher than the temperature on the side in contact with the second electrode, thereby raising the temperature of the light-emitting unit.

10. A display device, characterized in that, include: The display panel is the display panel as described in any one of claims 1-9; the control circuit board is electrically connected to the display panel and is used to control the display panel to display corresponding images, control the collection of electrical energy generated by the thermoelectric conversion unit under the action of temperature difference, and control the thermoelectric conversion unit to generate a temperature difference on opposite sides.

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