Photovoltaic-display integrated quantum dot backlight module
By integrating photovoltaic elements with a backlight module, the photovoltaic elements capture ambient light energy and convert it into electrical energy. Combined with ultraviolet curing technology to fix quantum dots, the shortcomings of traditional display modules in terms of energy utilization, optical performance, material stability, and component compatibility are solved, achieving self-powered, low-energy consumption, high color gamut, and long-term stable display.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- ZHENGZHOU UNIV
- Filing Date
- 2025-05-12
- Publication Date
- 2026-06-09
Smart Images

Figure CN224341754U_ABST
Abstract
Description
Technical Field
[0001] This utility model belongs to the field of display technology, specifically relating to a photovoltaic-display integrated quantum dot backlight module. Background Technology
[0002] Traditional display modules in the field of display technology have many problems in terms of energy utilization, optical performance, material stability and component compatibility. For example, (1) the dependence of traditional display modules on external power supply causes their use to be limited. According to statistics, in the field of outdoor advertising, about 70% of billboards in remote areas cannot be lit normally for more than 20% of the time each year because it is difficult to connect to a stable power grid. Even if the wiring is successfully completed, the monthly electricity cost is as high as several thousand yuan. In terms of vehicle display, when the vehicle power system fails, the display device will stop working immediately, affecting driving safety and user experience. This is because traditional display modules lack energy collection and conversion capabilities and rely entirely on external power supply. (2) Traditional display modules have high energy consumption, especially in outdoor and mobile scenarios. Taking a common outdoor LCD advertising screen as an example, its power is usually between 200-500W. If it works for 12 hours a day, the monthly power consumption can reach 72-180 kWh. The high electricity cost makes many advertising operators unable to bear the burden. This is mainly because the luminous efficiency of traditional backlight modules is low, generally only 10-20 lm / W, and cannot make full use of ambient light energy. (3) Traditional display modules are difficult to achieve high color gamut display in terms of optical performance. According to the color gamut standard of the International Commission on Illumination (CIE), the color gamut coverage of traditional liquid crystal displays can usually only reach 70%-80% of the NTSC color gamut, which cannot meet people's growing demand for color reproduction. This is because traditional light-emitting materials, such as phosphors, have a wide emission spectrum and the emitted red, green and blue primary colors are not pure enough. When colors are mixed, color deviation will occur, resulting in a less vivid and lively display. (4) The stability problem of solution quantum dots used in traditional display modules limits their widespread application in the display field. Studies have shown that in an environment with humidity higher than 60%, solution quantum dots will show obvious deliquescence within 24 hours, resulting in a 30%-40% decrease in luminous intensity; after being exposed to air for a week, the luminous efficiency of quantum dots will decrease by 20%-30% due to oxidation. This is because solution quantum dots are chemically active and easily react with moisture and oxygen in the external environment. (5) The compatibility between the components of traditional display modules is poor, and corrosion or stress cracking between materials is prone to occur. In a year-long aging test of 100 traditional display modules, it was found that more than 30% of the modules exhibited varying degrees of interlayer separation or damage. This is because different materials have significantly different coefficients of thermal expansion, which generate stress when the temperature changes. For example, the coefficients of thermal expansion of the conductive layer and the light-emitting layer in a traditional display module can differ by 5-10 ppm / ℃, making them highly susceptible to poor contact after repeated thermal cycles.
[0003] The aforementioned problems severely limit the application and development of traditional display modules in diverse scenarios. Therefore, a photovoltaic-display integrated quantum dot backlight module is needed to solve these technical problems. Utility Model Content
[0004] The purpose of this invention is to address the shortcomings of existing technologies by providing a photovoltaic-display integrated quantum dot backlight module. This module achieves self-powered operation by integrating photovoltaic elements with the backlight module, thus solving the problem of complete reliance on external power sources. Utilizing the high color purity of quantum dots and a special optical path design, the color gamut coverage is increased to over 90% of the NTSC color gamut. Ultraviolet curing is used to fix the quantum dots, improving their stability. The selection of chemically compatible materials and the design of suitable interface layers enhance the compatibility between components.
[0005] To achieve the above objectives, this utility model is implemented according to the following technical solution: a photovoltaic-display integrated quantum dot backlight module, comprising a photovoltaic element layer, an optical coupling layer, a quantum dot film layer, and a conductive and optical modulation layer sequentially laminated and bonded together by optical adhesive;
[0006] The photovoltaic element layer is a silicon-based solar panel, and the photovoltaic element layer can also be connected to a micro battery to store the converted excess electrical energy in the micro battery;
[0007] The optical coupling layer includes a high-transmittance polymer substrate, the upper surface of which is distributed with a micron-sized prism array or diffuse reflection particles, and the lower surface of which is coated with an antireflection film.
[0008] The quantum dot film includes a host and perovskite quantum dots embedded in the host;
[0009] The conductive and optical modulation layer includes a conductive layer and an optical modulation layer. The conductive layer is a transparent conductive base layer, and the optical modulation layer is located on the outermost side of the backlight module.
[0010] It should be noted that the photovoltaic element layer is used to capture ambient light energy (mainly ultraviolet / infrared light, with a spectral response range covering ultraviolet light (<400nm) and near-infrared light (>760nm), which is offset from the quantum dot excitation band (visible light 400-760nm) to avoid light energy competition), and convert it into electrical energy for the system to use. At the same time, it serves as a high-transmittance polymer substrate that provides physical support for the backlight module.
[0011] The optical coupling layer guides unabsorbed visible light (400-760nm) into the quantum dot film layer uniformly, while simultaneously isolating the photovoltaic element layer and the quantum dot film layer to prevent material interference. The surface of the high-transmittance polymer substrate undergoes micro / nano-structure processing, with a micron-scale prism array or diffuse reflection particles distributed on the upper surface to scatter incident visible light across the entire angle, ensuring uniform light reception by the quantum dot film layer. An antireflection film (silicon dioxide / titanium oxide multilayer film) is deposited on the lower surface of the high-transmittance polymer substrate to reduce light reflection loss (reflectivity <1%) and improve light coupling efficiency. The optical coupling layer has a light transmittance >95% and low wavelength selectivity (uniform transmission across the entire visible light band). The structural design of the optical coupling layer is compatible with the thermal expansion coefficients of the photovoltaic element layer and the quantum dot film layer, avoiding interlayer delamination caused by temperature changes.
[0012] The quantum dot film serves as the core light-emitting layer, generating high-purity monochromatic light through visible light excitation to form a backlight source. The emission wavelength is controlled by adjusting the quantum dot size: red quantum dots (~620nm) with a particle size of approximately 10nm; green quantum dots (~520nm) with a particle size of approximately 6nm; and blue quantum dots (~450nm) with a particle size of approximately 4nm. The quantum dot film undergoes a UV curing process to form a three-dimensional network structure between the substrate and perovskite quantum dots, fixing the quantum dots and improving stability (water and oxygen resistance improved by over 80%). It exhibits high color purity (half-width at half maximum <30nm) and a color gamut coverage of ≥95% of the DCI-P3 standard. The luminous efficiency is >80%, enabling passive light emission without additional power consumption under ambient light excitation.
[0013] The conductive layer provides a driving voltage for the quantum dot film or light source, enabling display brightness control. The optical modulation layer optimizes the uniformity and directionality of the emitted light, forming a backlight that meets display requirements, with a transmittance >90%.
[0014] Preferably, the silicon-based solar panel (monocrystalline silicon) has a thickness of 100-300 μm, and the surface of the silicon-based solar panel is deposited with transparent conductive oxide (TCO, ITO), which has both light transmittance and conductivity, and is used for power output.
[0015] Preferably, the high-transmittance polymer substrate is polymethyl methacrylate (PMMA) with a thickness of 50-100 μm, and the antireflective film is a silica / titanium oxide multilayer film.
[0016] Preferably, the thickness of the quantum dot film is 30-50 μm, the main body is a UV-curable polymer matrix, and the perovskite quantum dots are CsPbCl3.
[0017] Preferably, the transparent conductive substrate is silver nanowires with a thickness of 100-120 μm, and the optical modulation layer has a thickness of 50-80 μm, thereby homogenizing the light intensity distribution (brightness uniformity >90%) through scattering particles.
[0018] Preferably, the total thickness of the photovoltaic element layer, optical coupling layer, quantum dot film layer and conductive and optical modulation layer, which are sequentially laminated and bonded by optical adhesive, is 300-500 μm.
[0019] This invention also includes other components that enable the photovoltaic-display integrated quantum dot backlight module to function properly, such as light sources, which are all conventional technologies in the field. Furthermore, devices or components not specified in this invention, such as silicon-based solar panels, transparent conductive oxide (TCO, ITO), polymethyl methacrylate (PMMA), silica / titanium oxide multilayer films, silver nanowires, and optical adhesives, all employ conventional technologies and equipment in the field.
[0020] Working Principle: The photovoltaic element layer, optical coupling layer, quantum dot film layer, and conductive and optical modulation layer employ an interlayer synergistic mechanism. The light energy transfer path is as follows: ambient light → photovoltaic element layer (absorbs ultraviolet / infrared light to generate electricity) → unabsorbed visible light → optical coupling layer (scattering / conduction) → quantum dot film layer (excites luminescence) → conductive and optical modulation layer (modulation / uniform light) → emitted backlight. The layers are bonded together using optically conductive adhesive (OCA) lamination, with the total thickness controlled at 300-500 μm, balancing thinness and structural strength. This four-layer structure, through a complete "energy capture-conduction-luminescence-modulation" design, achieves highly efficient synergy between photovoltaic power supply and quantum dot display, offering the dual advantages of energy saving and high-performance display.
[0021] A closed-loop system of "light energy collection-conversion-display" is constructed. Photovoltaic elements (silicon-based, perovskite photovoltaic materials) absorb ambient light energy and convert it into electrical energy through the photovoltaic effect, which can be used to directly power the system or stored in micro batteries, thus solving the problem of traditional display modules' dependence on power sources.
[0022] Achieving bidirectional light energy utilization, the photovoltaic element layer absorbs ultraviolet / infrared light to generate electricity to power the LED, while the unabsorbed 400-760nm visible light is introduced into the quantum dot film layer through the optical coupling layer to excite light emission, reducing LED energy consumption;
[0023] Utilizing a perovskite quantum dot film (CsPbCl3), the quantum dots are excited to produce high-purity monochromatic light under electrical drive. Through optical film modulation, the color gamut coverage can be increased to over 90% of the NTSC color gamut, resulting in more vibrant and realistic colors in the displayed image, meeting users' demands for high-quality displays.
[0024] The ultraviolet curing process forms a three-dimensional network structure between the substrate and perovskite quantum dots, which isolates external interference, avoids deliquescence and oxidation, and improves optical uniformity, ensuring long-term stable light emission in complex outdoor environments and extending the lifespan of the display module.
[0025] By setting an optical coupling layer between the photovoltaic element layer and the quantum dot film layer, the antireflective film (silica / titanium oxide multilayer film) of the optical coupling layer has strong chemical compatibility, which relieves thermal stress and prevents material corrosion and cracking. After long-term aging test verification, the module stability is improved by more than 50%, ensuring long-term stable operation.
[0026] The beneficial effects of this utility model are as follows: (1) Enhanced power supply autonomy: It breaks through the limitations of traditional display modules that rely on external power sources and integrates photovoltaic elements to achieve a closed loop of "light energy collection-conversion-display". Under sufficient light, the self-power supply rate exceeds 90%, which solves the problem that outdoor billboards in remote areas have a screen brightness rate of less than 80% due to wiring difficulties. It also avoids the complete failure of vehicle-mounted displays when the vehicle's power fails, and improves the continuous operation capability of display devices in scenarios without external power sources.
[0027] (2) Significantly reduced energy consumption: The innovative bidirectional light energy utilization mode allows photovoltaic elements to absorb ultraviolet / infrared light to generate electricity for LEDs, while unabsorbed visible light is guided into the quantum dot film to excite light emission, reducing LED energy consumption. Compared with traditional backlight modules, it can reduce external power consumption by 30%-50%. Under strong light, photovoltaic direct power supply and ambient light excitation are prioritized, while under weak light, energy storage batteries (micro batteries) are activated, improving the "light-electricity-light" conversion efficiency.
[0028] (3) Enhanced color gamut: The perovskite quantum dot film layer is used to generate high-purity monochromatic light when excited. After being modulated by the optical film (optical modulation layer), the color gamut coverage can be increased from the traditional NTSC color gamut of 70%-80% to more than 90%, making the displayed colors more vivid and realistic, meeting the needs of high-quality display.
[0029] (4) Improved quantum dot stability: Using ultraviolet curing technology, quantum dots are fixed in a solid mesh structure, isolating them from external interference and preventing deliquescence and oxidation. In environments with humidity exceeding 60%, the decrease in luminous intensity is controlled to a very small range (after 24 hours in an environment with humidity exceeding 60%, the decrease in luminous intensity can be controlled to within 10%). After being exposed to air for one week, the decrease in luminous efficiency is controlled to a low level (after one week of exposure to air, the decrease in luminous efficiency can be controlled to within 15%), ensuring long-term stable luminescence in complex outdoor environments and extending the lifespan of the display module.
[0030] (5) Component compatibility optimization: A chemically compatible optical coupling layer (titanium dioxide transition layer) is set between the photovoltaic element layer and the quantum dot film layer to alleviate thermal stress and prevent material corrosion and cracking. Long-term aging tests have verified that the module stability is improved by more than 50%, ensuring long-term stable operation. Attached Figure Description
[0031] The present invention will be further described below with reference to the accompanying drawings and embodiments.
[0032] Figure 1 This is a schematic diagram of the structure of a photovoltaic-display integrated quantum dot backlight module according to embodiments 1-3 of this utility model;
[0033] Figure 2 This is a flowchart illustrating the fabrication process of a photovoltaic-display integrated quantum dot backlight module according to embodiments 1-3 of this utility model.
[0034] In the diagram: 1. Photovoltaic element layer; 2. Optical coupling layer; 3. Quantum dot film layer; 4. Conductive and optical modulation layer. Detailed Implementation
[0035] The present invention will now be clearly described with reference to the accompanying drawings and specific embodiments. This description is merely for explaining the present invention and is not intended to limit it. Any modifications, equivalent substitutions, improvements, etc., made by those skilled in the art based on the embodiments of the present invention without inventive effort to obtain all other embodiments should be included within the protection scope of the present invention.
[0036] Example 1
[0037] like Figure 1 As shown, this utility model provides a photovoltaic-display integrated quantum dot backlight module, including a photovoltaic element layer 1, an optical coupling layer 2, a quantum dot film layer 3, and a conductive and optical modulation layer 4, which are sequentially laminated and bonded together by optical adhesive.
[0038] The photovoltaic element layer 1 is a silicon-based solar panel, and the photovoltaic element layer 1 is connected to a micro battery to store the converted excess electrical energy in the micro battery;
[0039] The optical coupling layer 2 includes a high-transmittance polymer substrate, the upper surface of which is distributed with a micron-sized prism array or diffuse reflection particles, and the lower surface of which is coated with an anti-reflection film.
[0040] The quantum dot film 3 includes a host and perovskite quantum dots embedded in the host;
[0041] The conductive and optical modulation layer 4 includes a conductive layer and an optical modulation layer. The conductive layer is a transparent conductive base layer, and the optical modulation layer is located on the outermost side of the backlight module.
[0042] It should be noted that the photovoltaic element layer 1 is used to capture ambient light energy (mainly ultraviolet / infrared light, with a spectral response range covering ultraviolet light (<400nm) and near-infrared light (>760nm), which is offset from the quantum dot excitation band (visible light 400-760nm) to avoid light energy competition), and convert it into electrical energy for the system to use. At the same time, it serves as a high-transmittance polymer substrate that provides physical support for the backlight module.
[0043] The optical coupling layer 2 guides unabsorbed visible light (400-760nm) into the quantum dot film layer 3 uniformly, while simultaneously isolating the photovoltaic element layer 1 and the quantum dot film layer 3 to prevent material interference. The surface of the high-transmittance polymer substrate undergoes micro / nano-structure processing, with a micron-scale prism array or diffuse reflection particles distributed on the upper surface to scatter incident visible light across the entire angle, ensuring uniform light reception in the quantum dot film layer 3. An antireflection film (silicon dioxide / titanium oxide multilayer film) is deposited on the lower surface of the high-transmittance polymer substrate to reduce light reflection loss (reflectivity <1%) and improve light coupling efficiency. The optical coupling layer 2 has a light transmittance >95% and low wavelength selectivity (uniform transmission across the entire visible light band). The structural design of the optical coupling layer 2 is compatible with the thermal expansion coefficients of the photovoltaic element layer 1 and the quantum dot film layer 3, avoiding interlayer delamination caused by temperature changes.
[0044] The quantum dot film layer 3 serves as the core light-emitting layer, generating high-purity monochromatic light through visible light excitation to form a backlight source. The emission wavelength is controlled by adjusting the quantum dot size: red quantum dots (~620nm) with a particle size of approximately 10nm; green quantum dots (~520nm) with a particle size of approximately 6nm; and blue quantum dots (~450nm) with a particle size of approximately 4nm. The quantum dot film layer 3 undergoes a UV curing process to form a three-dimensional network structure between the substrate and the perovskite quantum dots, fixing the quantum dots and improving stability (water and oxygen resistance improved by over 80%). It exhibits high color purity (half-width at half maximum <30nm) and a color gamut coverage of ≥95% of the DCI-P3 standard. The luminous efficiency is >80%, enabling passive light emission without additional power consumption under ambient light excitation.
[0045] The conductive layer provides a driving voltage for the quantum dot film layer 3 or the light source, enabling display brightness control. The optical modulation layer optimizes the uniformity and directionality of the emitted light, forming a backlight that meets display requirements, with a transmittance >90%.
[0046] The silicon-based solar panel (monocrystalline silicon) is 100 μm thick, and a transparent conductive oxide (TCO, ITO) is deposited on the surface of the silicon-based solar panel, which has both light transmittance and conductivity, and is used for power output.
[0047] The high-transmittance polymer substrate is polymethyl methacrylate (PMMA) with a thickness of 50 μm, and the antireflective film is a silica / titanium oxide multilayer film.
[0048] The thickness of the quantum dot film 3 is 30 μm, the main body is a UV-curable polymer matrix, and the perovskite quantum dots are CsPbCl3.
[0049] The transparent conductive substrate is silver nanowires with a thickness of 100 μm, and the optical modulation layer has a thickness of 50 μm. The light intensity distribution is homogenized by scattering particles (brightness uniformity >90%).
[0050] The total thickness of the photovoltaic element layer 1, optical coupling layer 2, quantum dot film layer 3, and conductive and optical modulation layer 4, which are sequentially laminated and bonded by optical adhesive, ranges from approximately 370 μm.
[0051] Example 2
[0052] like Figure 1 As shown, this utility model provides a photovoltaic-display integrated quantum dot backlight module, including a photovoltaic element layer 1, an optical coupling layer 2, a quantum dot film layer 3, and a conductive and optical modulation layer 4, which are sequentially laminated and bonded together by optical adhesive.
[0053] The photovoltaic element layer 1 is a silicon-based solar panel, and the photovoltaic element layer 1 is connected to a micro battery to store the converted excess electrical energy in the micro battery;
[0054] The optical coupling layer 2 includes a high-transmittance polymer substrate, the upper surface of which is distributed with a micron-sized prism array or diffuse reflection particles, and the lower surface of which is coated with an anti-reflection film.
[0055] The quantum dot film 3 includes a host and perovskite quantum dots embedded in the host;
[0056] The conductive and optical modulation layer 4 includes a conductive layer and an optical modulation layer. The conductive layer is a transparent conductive base layer, and the optical modulation layer is located on the outermost side of the backlight module.
[0057] It should be noted that the photovoltaic element layer 1 is used to capture ambient light energy (mainly ultraviolet / infrared light, with a spectral response range covering ultraviolet light (<400nm) and near-infrared light (>760nm), which is offset from the quantum dot excitation band (visible light 400-760nm) to avoid light energy competition), and convert it into electrical energy for the system to use. At the same time, it serves as a high-transmittance polymer substrate that provides physical support for the backlight module.
[0058] The optical coupling layer 2 guides unabsorbed visible light (400-760nm) into the quantum dot film layer 3 uniformly, while simultaneously isolating the photovoltaic element layer 1 and the quantum dot film layer 3 to prevent material interference. The surface of the high-transmittance polymer substrate undergoes micro / nano-structure processing, with a micron-scale prism array or diffuse reflection particles distributed on the upper surface to scatter incident visible light across the entire angle, ensuring uniform light reception in the quantum dot film layer 3. An antireflection film (silicon dioxide / titanium oxide multilayer film) is deposited on the lower surface of the high-transmittance polymer substrate to reduce light reflection loss (reflectivity <1%) and improve light coupling efficiency. The optical coupling layer 2 has a light transmittance >95% and low wavelength selectivity (uniform transmission across the entire visible light band). The structural design of the optical coupling layer 2 is compatible with the thermal expansion coefficients of the photovoltaic element layer 1 and the quantum dot film layer 3, avoiding interlayer delamination caused by temperature changes.
[0059] The quantum dot film layer 3 serves as the core light-emitting layer, generating high-purity monochromatic light through visible light excitation to form a backlight source. The emission wavelength is controlled by adjusting the quantum dot size: red quantum dots (~620nm) with a particle size of approximately 10nm; green quantum dots (~520nm) with a particle size of approximately 6nm; and blue quantum dots (~450nm) with a particle size of approximately 4nm. The quantum dot film layer 3 undergoes a UV curing process to form a three-dimensional network structure between the substrate and the perovskite quantum dots, fixing the quantum dots and improving stability (water and oxygen resistance improved by over 80%). It exhibits high color purity (half-width at half maximum <30nm) and a color gamut coverage of ≥95% of the DCI-P3 standard. The luminous efficiency is >80%, enabling passive light emission without additional power consumption under ambient light excitation.
[0060] The conductive layer provides a driving voltage for the quantum dot film layer 3 or the light source, enabling display brightness control. The optical modulation layer optimizes the uniformity and directionality of the emitted light, forming a backlight that meets display requirements, with a transmittance >90%.
[0061] The silicon-based solar panel (monocrystalline silicon) has a thickness of 200 μm. The surface of the silicon-based solar panel is deposited with transparent conductive oxides (TCO, ITO), which have both light transmittance and conductivity, and are used for power output.
[0062] The high-transmittance polymer substrate is polymethyl methacrylate (PMMA) with a thickness of 75 μm, and the antireflective film is a silica / titanium oxide multilayer film.
[0063] The thickness of the quantum dot film 3 is 40 μm, the main body is a UV-curable polymer matrix, and the perovskite quantum dots are CsPbCl3.
[0064] The transparent conductive substrate is silver nanowires with a thickness of 110 μm, and the optical modulation layer has a thickness of 65 μm. The light intensity distribution is homogenized by scattering particles (brightness uniformity >90%).
[0065] The total thickness of the photovoltaic element layer 1, optical coupling layer 2, quantum dot film layer 3, and conductive and optical modulation layer 4, which are sequentially laminated and bonded by optical adhesive, is approximately 530 μm.
[0066] Example 3
[0067] like Figure 1 As shown, this utility model provides a photovoltaic-display integrated quantum dot backlight module, including a photovoltaic element layer 1, an optical coupling layer 2, a quantum dot film layer 3, and a conductive and optical modulation layer 4, which are sequentially laminated and bonded together by optical adhesive.
[0068] The photovoltaic element layer 1 is a silicon-based solar panel, and the photovoltaic element layer 1 is connected to a micro battery to store the converted excess electrical energy in the micro battery;
[0069] The optical coupling layer 2 includes a high-transmittance polymer substrate, the upper surface of which is distributed with a micron-sized prism array or diffuse reflection particles, and the lower surface of which is coated with an anti-reflection film.
[0070] The quantum dot film 3 includes a host and perovskite quantum dots embedded in the host;
[0071] The conductive and optical modulation layer 4 includes a conductive layer and an optical modulation layer. The conductive layer is a transparent conductive base layer, and the optical modulation layer is located on the outermost side of the backlight module.
[0072] It should be noted that the photovoltaic element layer 1 is used to capture ambient light energy (mainly ultraviolet / infrared light, with a spectral response range covering ultraviolet light (<400nm) and near-infrared light (>760nm), which is offset from the quantum dot excitation band (visible light 400-760nm) to avoid light energy competition), and convert it into electrical energy for the system to use. At the same time, it serves as a high-transmittance polymer substrate that provides physical support for the backlight module.
[0073] The optical coupling layer 2 guides unabsorbed visible light (400-760nm) into the quantum dot film layer 3 uniformly, while simultaneously isolating the photovoltaic element layer 1 and the quantum dot film layer 3 to prevent material interference. The surface of the high-transmittance polymer substrate undergoes micro / nano-structure processing, with a micron-scale prism array or diffuse reflection particles distributed on the upper surface to scatter incident visible light across the entire angle, ensuring uniform light reception in the quantum dot film layer 3. An antireflection film (silicon dioxide / titanium oxide multilayer film) is deposited on the lower surface of the high-transmittance polymer substrate to reduce light reflection loss (reflectivity <1%) and improve light coupling efficiency. The optical coupling layer 2 has a light transmittance >95% and low wavelength selectivity (uniform transmission across the entire visible light band). The structural design of the optical coupling layer 2 is compatible with the thermal expansion coefficients of the photovoltaic element layer 1 and the quantum dot film layer 3, avoiding interlayer delamination caused by temperature changes.
[0074] The quantum dot film layer 3 serves as the core light-emitting layer, generating high-purity monochromatic light through visible light excitation to form a backlight source. The emission wavelength is controlled by adjusting the quantum dot size: red quantum dots (~620nm) with a particle size of approximately 10nm; green quantum dots (~520nm) with a particle size of approximately 6nm; and blue quantum dots (~450nm) with a particle size of approximately 4nm. The quantum dot film layer 3 undergoes a UV curing process to form a three-dimensional network structure between the substrate and the perovskite quantum dots, fixing the quantum dots and improving stability (water and oxygen resistance improved by over 80%). It exhibits high color purity (half-width at half maximum <30nm) and a color gamut coverage of ≥95% of the DCI-P3 standard. The luminous efficiency is >80%, enabling passive light emission without additional power consumption under ambient light excitation.
[0075] The conductive layer provides a driving voltage for the quantum dot film layer 3 or the light source, enabling display brightness control. The optical modulation layer optimizes the uniformity and directionality of the emitted light, forming a backlight that meets display requirements, with a transmittance >90%.
[0076] The silicon-based solar panel (monocrystalline silicon) has a thickness of 300 μm. The surface of the silicon-based solar panel is deposited with transparent conductive oxide (TCO, ITO), which has both light transmittance and conductivity, and is used for power output.
[0077] The high-transmittance polymer substrate is polymethyl methacrylate (PMMA) with a thickness of 100 μm, and the antireflective film is a silica / titanium oxide multilayer film.
[0078] The thickness of the quantum dot film 3 is 50 μm, the main body is a UV-curable polymer matrix, and the perovskite quantum dots are CsPbCl3.
[0079] The transparent conductive substrate is silver nanowires with a thickness of 120 μm, and the optical modulation layer has a thickness of 80 μm. The light intensity distribution is homogenized by scattering particles (brightness uniformity >90%).
[0080] The total thickness of the photovoltaic element layer 1, optical coupling layer 2, quantum dot film layer 3, and conductive and optical modulation layer 4, which are sequentially laminated and bonded by optical adhesive, is approximately 690 μm.
[0081] The photovoltaic-display integrated quantum dot backlight module fabricated in this embodiment realizes a closed-loop system of "light energy collection-conversion-display", reducing dependence on power supply; it achieves bidirectional light energy utilization, reducing power consumption; the displayed image has more vivid and realistic colors, meeting users' needs for high-quality display; it improves optical uniformity while isolating external interference, avoiding deliquescence and oxidation, ensuring long-term stable light emission in complex outdoor environments, and extending the service life of the display module; it alleviates thermal stress, prevents material corrosion and cracking, and has high module stability.
[0082] like Figure 2 As shown in the above embodiment, the fabrication process of a photovoltaic-display integrated quantum dot backlight module mainly includes: Step 1, fabricating a photovoltaic element layer; Step 2, constructing an optical coupling layer; Step 3, coating a quantum dot film layer; Step 4, fabricating a conductive and optical modulation layer; Step 5, laminating and integrating the module; Step 6, testing.
[0083] Step one is conducted in a clean, dust-free workshop environment, with the temperature controlled at 20-25℃ and the relative humidity maintained at 40%-60% to avoid the impact of dust and moisture on the film quality. Specifically, monocrystalline silicon wafers are selected as the base material, with a purity of at least 99.99% to ensure photovoltaic conversion efficiency; an inductively coupled oxide (ITO) target is used for surface deposition. First, the monocrystalline silicon wafer is cleaned and pretreated to remove surface impurities and oil. Using magnetron sputtering in physical vapor deposition (PVD), the ITO target is sputtered onto the surface of the monocrystalline silicon wafer to form a transparent conductive layer with a thickness of approximately 10-20 nm. During sputtering, the sputtering power is controlled at 100-200W. Subsequently, the ITO layer is patterned using photolithography and etching processes to meet circuit design requirements, resulting in a photovoltaic element layer with specific conductive lines.
[0084] Step two is also conducted in a cleanroom at approximately 22°C and 50% humidity. Using polymethyl methacrylate (PMMA) as the high-transmittance polymer substrate, a thin film with a thickness of 50-100 μm is prepared. On the upper surface of the PMMA film, micron-scale prism arrays or diffuse reflection particle structures are fabricated using photolithography and etching techniques. By designing a photolithographic mask, the exposure time and intensity are precisely controlled during photolithography to form the desired micro / nano structure pattern on the PMMA film. Etching is then performed to transfer the pattern onto the PMMA film. On the lower surface of the PMMA film, a silicon dioxide / titanium oxide multilayer antireflection film is deposited using magnetron sputtering. By precisely controlling the evaporation rate of the coating material and the deposition time, an antireflection film with low reflectivity (<1%) is prepared, improving light coupling efficiency.
[0085] Step 3 is performed in a nitrogen-protected glove box to prevent the quantum dots from contacting moisture and oxygen in the air. The temperature is controlled at around 20°C and the humidity is below 1%. Epoxy acrylate, perovskite quantum dot precursor solution, and photoinitiator are mixed uniformly in a specific ratio to form a quantum dot mixed solution. Using spin coating or blade coating techniques, the quantum dot mixed solution is uniformly coated onto the optical coupling layer to form a wet film with a thickness of 30-50 μm. The coated wet film is then placed in a UV curing device and cured under 365 nm UV light for 3-5 minutes. This allows the epoxy acrylate to undergo a cross-linking reaction, forming a three-dimensional network structure that fixes the perovskite quantum dots, resulting in a stable quantum dot film.
[0086] Step four is performed in a dust-free, dry environment at approximately 23°C and 40% humidity. For the conductive layer, the silver nanowire dispersion is uniformly coated onto the quantum dot film using spraying or printing to form a transparent conductive base layer with a thickness of 100-120 μm. After coating, a thermosetting process is performed at 120-150°C for 10-15 minutes to ensure good conductive connections between the silver nanowires. Then, diffusing particles such as silica microspheres are uniformly mixed with a binder to form an optical modulation material. Using a coating technique, this optical modulation material is uniformly coated onto the conductive layer to form an optical modulation layer with a thickness of 50-80 μm. By controlling the concentration and particle size distribution of the diffusing particles, light intensity uniformity is achieved, resulting in a brightness uniformity >90%.
[0087] Step 5 involves lamination in a laminating machine, with the temperature controlled at 80-120℃, the pressure at 5-10MPa, and the time at 5-10 minutes. The test environment must simulate actual usage scenarios, including different light intensities, temperatures, and humidity conditions. The prepared photovoltaic element layer, optical coupling layer, quantum dot film layer, and conductive and optical modulation layer are stacked sequentially, with optical adhesive (OCA) evenly applied in between. Hot pressing is then performed using the laminating machine to tightly bond the layers together, forming a complete photovoltaic-display integrated quantum dot backlight module with a total thickness controlled at 300-500μm.
[0088] Step six involves a comprehensive test of the integrated photovoltaic-display quantum dot backlight module, including photoelectric performance testing, such as measuring luminous brightness, color gamut coverage, and power consumption under different lighting conditions; stability testing, simulating high temperature, high humidity, and low temperature environments to test the long-term stability of the module; and structural strength testing, checking the adhesion between layers and the overall mechanical strength of the module.
[0089] The embodiments of this utility model have been described above. These descriptions are exemplary and not exhaustive, nor are they limited to the disclosed embodiments. Many modifications and variations will be apparent to those skilled in the art without departing from the scope and spirit of the described embodiments. Any modifications, equivalent substitutions, and improvements made within the spirit and principles of this utility model should be included within the protection scope of this utility model.
Claims
1. A photovoltaic-display integrated quantum dot backlight module, characterized in that: It includes a photovoltaic element layer, an optical coupling layer, a quantum dot film layer, and a conductive and optical modulation layer that are sequentially laminated and bonded together by optical adhesive; The photovoltaic element layer is a silicon-based solar cell panel. The optical coupling layer includes a high-transmittance polymer substrate, the upper surface of which is distributed with a micron-sized prism array or diffuse reflection particles, and the lower surface of which is coated with an antireflection film. The quantum dot film includes a host and perovskite quantum dots embedded in the host. The thickness of the quantum dot film is 30-50 μm. The host is a UV-curable polymer matrix and the perovskite quantum dots are CsPbCl3. The conductive and optical modulation layer includes a conductive layer and an optical modulation layer. The conductive layer is a transparent conductive base layer, and the optical modulation layer is located on the outermost side of the backlight module.
2. The photovoltaic-display integrated quantum dot backlight module according to claim 1, characterized in that: The silicon-based solar panel has a thickness of 100-300 μm, and a transparent conductive oxide is deposited on its surface.
3. The photovoltaic-display integrated quantum dot backlight module according to claim 1, characterized in that: The high-transmittance polymer substrate is polymethyl methacrylate (PMMA) with a thickness of 50-100 μm, and the antireflective film is a silica / titanium oxide multilayer film.
4. The photovoltaic-display integrated quantum dot backlight module according to claim 1, characterized in that: The transparent conductive substrate is silver nanowires, and the thickness of the transparent conductive substrate is 100-120 μm. The thickness of the optical modulation layer is 50-80 μm.
5. A photovoltaic-display integrated quantum dot backlight module according to claim 1, characterized in that: The total thickness of the photovoltaic element layer, optical coupling layer, quantum dot film layer and conductive and optical modulation layer, which are sequentially laminated and bonded by optical adhesive, is 370-690 μm.