Pulse valve manifold to minimize leakage

Abstract

A pulse valve manifold (PVM) assembly includes a PVM. The PVM is formed from two or less manifold portions. In one embodiment, the PVM includes: a tube section having an inlet port to enable reactant to enter the PVM; a rectangular block section having a top surface and a bottom surface, where the top surface is connected to the tube section; and a base section connected to the bottom surface, the base section having an outlet through which a reactant gas flows out to a showerhead. The single part PVM may be formed using additive manufacturing, such as 3D printing. Alternatively, a two-part PVM may be formed having a top section including the tube section and a bottom section including the base. The PVM also includes a wetting path that flows reactant gas from the inlet port to the outlet port, and the wetting path may include a helical section.

Description

Technical Field

[0001] This disclosure relates generally to the manufacture of semiconductor devices. In particular, the present invention relates to a pulse valve manifold for vapor deposition in a semiconductor processing system. Background Technology

[0002] There are several vapor deposition methods for depositing thin films on the surface of a substrate. These methods include vacuum evaporation deposition, molecular beam epitaxy (MBE), various forms of chemical vapor deposition (CVD) (including low-pressure and organometallic CVD and plasma-enhanced CVD), and atomic layer deposition (ALD).

[0003] In the ALD process, one or more substrates having at least one surface to be coated are introduced into a deposition chamber. The substrate is heated to a desired temperature, typically above the condensation temperature of the selected gas-phase reactant but below its thermal decomposition temperature. A reactant reacts with adsorbed species from the previously reactant to form the desired product on the substrate surface. Two, three, or more reactants are typically supplied to the substrate in spatially and temporally separated pulses.

[0004] In one example, during the first pulse, the first reactant, representing the precursor material, is substantially completely adsorbed on the wafer in a self-limiting process. This process is self-limiting because the gaseous precursor cannot react with or adsorb onto the already adsorbed portion of the precursor. After any remaining first reactant is removed from the wafer or chamber, the pre-adsorbed precursor material on the substrate reacts with subsequent reactant pulses to form the desired material, not exceeding a single molecular layer. Subsequent reactants can, for example, strip ligands from the pre-adsorbed precursor material to make the surface reactive again, replace the ligands, and leave other materials of the compound, etc. In a pure ALD process, less than one monolayer is formed on average per cycle due to steric hindrance, where the size of the precursor molecules prevents access to adsorption sites on the substrate that may become available in subsequent cycles. Thicker films are produced by repeating growth cycles until the target thickness is reached. The growth rate is typically provided in angstroms per cycle because, in theory, growth depends only on the number of cycles and not on the quality or temperature supplied, provided that each pulse is saturated and the temperature is within the ideal ALD temperature window for those reactants (no thermal decomposition and no condensation).

[0005] Reactants and temperatures are typically chosen to avoid condensation and thermal decomposition of reactants during the process, allowing the chemical reaction to be responsible for growth over multiple cycles. However, in certain variations of ALD machining, by utilizing a hybrid CVD and ALD reaction mechanism, conditions can be selected to alter the growth rate of each cycle, potentially exceeding one molecular monolayer per cycle. Other variations may allow some spatial and / or temporal overlap between reactants. In ALD and its variations, two, three, four, or more reactants can be sequentially supplied in a single cycle, and the amounts in each cycle can be varied to customize the composition.

[0006] During a typical ALD process, all reactant pulses in vapor form are sequentially pulsed into the reaction space (e.g., the reaction chamber), with removal steps between reactant pulses to avoid direct interaction between reactants in the gas phase. For example, an inert gas pulse, or "purge" pulse, may be provided between reactant pulses. The inert gas purges one reactant pulse in the chamber before the next reactant pulse to prevent gas phase mixing. To achieve self-limiting growth, sufficient amounts of each precursor are provided to saturate the substrate. Because the growth rate in each cycle of a true ALD process is self-limiting, the growth rate is proportional to the repetition rate of the reaction sequence rather than the reactant flow rate.

[0007] Conventional designs provide for the stacking of blocks that form manifolds with long internal orifices, which facilitates more uniform mixing of reactants during vapor deposition. Specifically, using multiple blocks allows the channels to be configured at various angles within the manifold. Furthermore, multiple blocks also provide extended micromotion lengths downstream as supply gas is introduced into the orifices.

[0008] However, this design requires numerous sealing mechanisms at the interfaces. This design can lead to complex manufacturing processes. Furthermore, leakage variations between manifolds are high due to the multiple interfaces created by the stacked manifolds. Additional standby time may also be required for multiple sections during cleaning. Therefore, improvements are needed in the manufacturing of pulse valve manifolds in semiconductor processing devices.

[0009] Any discussion set forth in this section, including discussions of problems and solutions, is included in this disclosure solely for the purpose of providing context for this disclosure and should not be construed as an admission that any or all of the discussions were known at the time the invention was made or otherwise constitute prior art. Summary of the Invention

[0010] A pulse valve manifold (PVM) assembly is provided. The assembly includes a PVM. The PVM includes a tubular section having an inlet to allow reactants to enter the PVM. The PVM also includes a rectangular block section having a top surface and a bottom surface, wherein the top surface is connected to the tubular section. The PVM also includes a base section connected to the bottom surface. The PVM is formed by two or fewer manifold sections and is also configured to connect to at least one tombstone manifold block. The PVM assembly includes at least one wetting path formed within the PVM to allow reactant gases to flow from the inlet to an outlet in the base section.

[0011] A two-part PVM assembly is provided. The two-part assembly includes a first PVM portion comprising a tube section having an inlet to allow reactants to enter the two-part PVM assembly. The two-part assembly also includes a second PVM portion coupled to the first PVM portion. The second PVM portion has a base outlet for flowing the reactants to a nozzle in a semiconductor processing system. The two-part PVM assembly also includes a wetting path defined through the first PVM path portion and the second PVM portion to provide fluid communication between the first PVM portion and the second PVM portion. The wetting path includes a central path fluidly coupled to the inlet. The wetting path also includes a mixing section included in the second PVM portion, the mixing section being fluidly coupled to the central path and the base outlet. Finally, the wetting path includes a plurality of side inlets fluidly coupled to the central path.

[0012] A single-part PVM assembly is provided. The single-part PVM assembly includes an outer section and an inner section. The outer section includes a tubular section having an inlet to allow reactants to enter the PVM. The outer section includes a columnar section having a top surface and a bottom surface, wherein the top surface is connected to the tubular section. The outer section also includes a base section connected to the bottom surface, the base section having a base outlet for flowing the reactants to a nozzle in a semiconductor processing system. The inner section includes a wetting path defined within the inner section, the wetting path fluidly connecting the inlet to the outlet. The outer section includes a plurality of side inlets fluidly connected to the wetting path.

[0013] This overview is provided to introduce a set of concepts in a simplified form. These concepts are further described in detail in the following detailed description of examples of this disclosure. The content of this invention is not intended to identify key or essential features of the claimed subject matter, nor is it intended to limit the scope of the claimed subject matter. Attached Figure Description

[0014] These and other features, aspects and advantages of the invention disclosed herein will be described below with reference to accompanying drawings of certain embodiments, which are intended to be illustrative and not limiting of the invention.

[0015] Figure 1 A perspective view of a conventional pulse valve manifold is shown;

[0016] Figures 2A to 2D An example embodiment of a pulse valve manifold formed by a single part of an embodiment including an internal path, according to the embodiment described herein, is illustrated.

[0017] Figures 3A to 3D Another example embodiment of a pulse valve manifold formed by a single part of a second embodiment including an internal path, according to the embodiment described herein, is illustrated.

[0018] Figure 4A and Figure 4B A perspective view of a pulse valve manifold formed from a single part according to the embodiment described herein is illustrated;

[0019] Figures 5A to 5E An example embodiment of a pulse valve manifold, formed by two machined parts to include an internal path, is illustrated according to the embodiment described herein.

[0020] Figures 6A to 6E A perspective view of a pulse valve manifold of a second embodiment, formed by two machined parts to include an internal path, according to the embodiment described herein, is illustrated.

[0021] Figure 7 A perspective view of a pulse valve manifold formed by two machined parts according to the embodiment described herein is shown.

[0022] It should be understood that the elements in the figures are shown for simplicity and clarity only and are not necessarily drawn to scale. For example, the relative size of some elements in the figures may be exaggerated relative to other elements to aid in understanding the embodiments shown in this disclosure. Detailed Implementation

[0023] Reference will now be made to the accompanying drawings, wherein the same reference numerals identify similar structural features or aspects of this disclosure. The systems and methods of this disclosure may be used in semiconductor processing systems for manufacturing semiconductor devices, such as those used in semiconductor processing systems for depositing material layers during the manufacture of logic and memory devices using chemical vapor deposition (CVD) and atomic layer deposition (ALD) techniques; however, this disclosure is generally not limited to any semiconductor processing operation or the manufacture of any particular semiconductor device.

[0024] As used herein, the term "substrate" can refer to any one or more underlying materials, including any one or more underlying materials that can be modified or on which devices, circuits, or films can be formed. A "substrate" can be continuous or discontinuous; rigid or flexible; solid or porous; and combinations thereof. A substrate can be in any form, such as powder, plate, or workpiece. Plate-type substrates can include wafers of various shapes and sizes. Wafer diameters can be 200 mm, 300 mm, or even 450 mm. Substrates can be formed from one or more semiconductor materials, including, as non-limiting examples, silicon, silicon germanium, silicon oxide, gallium arsenide, gallium nitride, and silicon carbide.

[0025] Figure 1 A perspective view of a pulse valve manifold (PVM) 100 is illustrated. The PVM 100 includes a base 102. Furthermore, the PVM 100 includes five manifold blocks 104, 106, 108, 112, and 114, configured to stack on the base 102, and each interface can be sealed using one or preferably two O-rings. Thus, eight O-rings are used to seal the five manifold blocks 104, 106, 108, 112, and 114 in a vertical stack. Additionally, a sixth block 116, having an inlet pipe 118, is stacked on top of block 114. Block 116 is also sealed to block 114 using at least one, two, or more O-rings. Furthermore, the stacks 104 to 116 can be assisted by bolts 130 to maintain alignment in the vertical stack.

[0026] The PVM 100 also includes a first tombstone manifold block 122 and a second tombstone manifold block 124 connected to block 114. These tombstone blocks 122 and 124 may include gas inlets allowing reactant streams to flow through internal channels. The first tombstone block 122 can be attached to one side of block 114 using bolts 132 and 134, and the second tombstone block 124 can be attached to one side of block 114 using bolts 136 and 138. These blocks 122 and 124 are sealed to block 114 using two or more O-rings. Therefore, eight stacked PVMs 100 utilize at least fourteen O-rings for sealing.

[0027] The internal sections of these stacked blocks form internal channels to mix reactants together before they flow through the nozzles of the semiconductor processing system and are deposited onto the substrate. These internal channels can include any prior conventional channels / paths that can be used for reactant mixing. For example, any conventional axial, helical, spiral, C-shaped channels, or combinations thereof, can be used. However, the number of interfaces in this design increases the chance of leakage between the stacked manifold blocks. This design further increases cleaning standby time and can lead to increased costs for partial replacements. Therefore, this application provides Figures 2 to... Figure 7The example implementation in the example provides an improved pulse valve manifold that reduces the number of parts required in manufacturing the PVM.

[0028] Now for reference Figure 4A A perspective view of an exemplary PVM 400 is provided. Figure 4A As shown, pipe 406, vertical block 410, and base 420 are single parts 430 (different from...). Figure 1 (The stacked blocks shown). In an exemplary embodiment, additive manufacturing (such as 3D printing) can be used to form the tube 406, the vertical block 410, and the base 420. Thus, the tube 406, the vertical block 410, and the base 420 form a single part 430.

[0029] Tombstone manifold blocks (such as 122 and 124) are not formed as segments of a single portion 430. Therefore, in an exemplary embodiment, additional interfaces 422 and 424 may be machined to allow the tombstone manifold block to be coupled to and installed with portion 430 (see [link to documentation]). Figure 4B In an exemplary embodiment, these tombstone manifold blocks may be sealed to section 430 using multiple C-shaped seals. In another exemplary embodiment, seven C-shaped seals may be used to seal with section 430 to form PVM 400. However, in different embodiments, the internal paths of reactant flow and mixing prior to deposition may differ. Figures 2A to 2D and Figures 3A to 3D Various implementations of the PVM 400 with different internal reactant pathways are provided.

[0030] Now for reference Figures 2A to 2D The diagram illustrates multiple views of the PVM 200. The PVM 200 can be an exemplary embodiment of a single part 430 as described with respect to Figure 4. Specifically, Figures 2A to 2D An example is shown of the internal path through which the reactants flow to be uniformly mixed before deposition. Figure 2A A cross-section of the PVM 200 as viewed from a first side (e.g., front view) is provided, and Figure 2B Cross-sections of the PVM 200 as viewed from different sides (e.g., rear view or side view) are provided. Figure 2C and Figure 2D A perspective view of path 250 formed inside PVM 200 is provided.

[0031] The PVM 200 is configured to include an inlet 202 that provides an entry point for one or more reactant gases into an internal path 250. In an exemplary embodiment, inlet 202 may extend into a narrow central path 222. The PVM 200 may also include a first side inlet 204, a second side inlet 206, and a third side inlet 208. In an exemplary embodiment, inlets 204, 206, and 208 form C-shaped channels (such as C-shaped channel 256 formed from inlet 206 and C-shaped channel 258 formed from inlet 208), which allow reactants to flow along the respective C-shaped channels before flowing back to the intermediate central path 212. Figure 2C and Figure 2D As shown, in an exemplary embodiment, the reactants may flow along spiral path 216 to allow for complete mixing. In another exemplary embodiment, the mixture may then flow out through outlet 214 to be uniformly deposited on a substrate.

[0032] Now for reference Figures 3A to 3D The diagram illustrates multiple views of the PVM 300. The PVM 300 can be an exemplary embodiment of a single part 430 as described with respect to Figure 4. Specifically, Figures 3A to 3D An example is shown of the internal path through which the reactants flow to be uniformly mixed before deposition. Figure 3A A cross-section of the PVM 300 as viewed from a first side (e.g., front view) is provided, and Figure 3B Cross-sections of the PVM 300 as viewed from different sides (e.g., rear view or side view) are provided. Figure 3C and Figure 3D A perspective view of path 350 formed inside PVM 300 is provided.

[0033] The PVM 300 is configured to include an inlet 302 that provides an entry point for one or more reactant gases into an internal path 350. In an exemplary embodiment, inlet 302 may extend into a narrow central path 322. The PVM 300 may also include a first side inlet 304, a second side inlet 306, and a third side inlet 308. Unlike the PVM 200, reactants flowing through inlets 304, 306, and 308 flow directly into the central path 312. Figure 3C and Figure 3D As shown, in an exemplary embodiment, the reactants can then flow along spiral path 316 to allow for complete mixing. In another exemplary embodiment, the mixture can then flow out through outlet 314 to be uniformly deposited on the substrate.

[0034] Now for reference Figure 7 A perspective view of an exemplary PVM 700 is provided. Figure 7As shown, pipe 706 (including inlet 702) and first vertical section 712 form top portion 710. Base 732 and second vertical section 720 form bottom portion 730. These two portions, top portion 710 and bottom portion 730, can be machined together to form PVM 700. Alternatively, an O-ring can be used to seal these two portions.

[0035] Furthermore, the PVM 700 is configured to mount tombstone manifold blocks (such as 122 and 124). Therefore, in an exemplary embodiment, interfaces 722 and 724 may be machined to allow the tombstone manifold blocks to be coupled and mounted to the top portion 710 of the PVM 700. In an exemplary embodiment, these tombstone manifold blocks may be sealed to the top portion 710 using multiple C-shaped seals. In another exemplary embodiment, seven C-shaped seals may be used to seal to the top portion 710. Therefore, in an exemplary embodiment, a two-part machined PVM 700 may include seven C-shaped seals and an O-ring for sealing. However, in different embodiments, the internal paths of reactant flow and mixing prior to deposition may differ. Figures 5A to 5E and Figures 6A to 6E Various implementations of the PVM 700 with different internal reactant pathways are provided.

[0036] Now for reference Figures 5A to 5E This illustrates several views of the PVM 500. The PVM 500 can be as follows: Figure 7 An exemplary implementation of the described two-part machining PVM 700. Specifically, Figures 5A to 5E An example is shown of the internal path through which the reactants flow to be uniformly mixed before deposition. Figure 5A A cross-section of the PVM 500 as viewed from a first side (e.g., front view) is provided, and Figure 5B Cross-sections of the PVM 500 as viewed from different sides (e.g., rear view or side view) are provided. Figure 5C and Figure 5D A perspective view of path 550 formed inside PVM 500 is provided. Figure 5E An enlarged view of the seal between the top portion 510 and the bottom portion 520 is provided.

[0037] The PVM 500 is configured to include an inlet 502, which provides an entry point for one or more reactant gases into an internal path 550. In an exemplary embodiment, inlet 502 may extend into a narrow central path 522. The PVM 500 may also include a first side inlet 504, a second side inlet 506, and a third side inlet 508. Reactants flowing through inlets 504, 506, and 508 flow directly into the central path 512. Figure 5C and Figure 5DAs shown, in an exemplary embodiment, the reactants may then flow along vortex path 516 to allow for complete mixing. In another exemplary embodiment, the mixture may then flow through bottom center path 532 and then exit through outlet 514 to be uniformly deposited on the substrate.

[0038] Therefore, in Figure 5A and Figure 5B In the exemplary embodiment shown, the top portion 510 includes side inlets 504, 506, and 508, and the bottom portion 520 includes a vortex path 516 and a bottom center path 532, the bottom center path including an outlet 514. The two portions 510 and 520 can be aligned together to provide a smooth transition from the side inlets 504, 506, and 508 to the vortex path 516. Figure 5E As shown, the top portion 510 connects to the bottom portion 520 at the central path 512. Figure 5A and Figure 5B As shown, the top portion 510 is recessed to allow the protruding bottom portion 520 to mate with the recessed top portion 510. The top portion 510 and the bottom portion 520 can be sealed at straight edges, as... Figure 5E As shown. In an exemplary embodiment, the first O-ring 552 can be used as a seal. In another exemplary embodiment, the second O-ring 554 can be used as a seal.

[0039] Now for reference Figures 6A to 6E This illustrates several views of the PVM 600. The PVM 600 can be as follows: Figure 7 An exemplary implementation of the described two-part machining PVM 700. Specifically, Figures 6A to 6E An example is shown of the internal path through which the reactants flow to be uniformly mixed before deposition. Figure 6A A cross-section of the PVM 600 as viewed from a first side (e.g., front view) is provided, and Figure 6B Cross-sections of the PVM 600 as viewed from different sides (e.g., rear view or side view) are provided. Figure 6C and Figure 6D A perspective view of path 650 formed inside PVM 600 is provided. Figure 6E An enlarged view of the seal between the top portion 610 and the bottom portion 620 is provided.

[0040] The PVM 600 is configured to include an inlet 602, which provides an entry point for one or more reactant gases into an internal path 650. In an exemplary embodiment, inlet 602 may extend into a narrow central path 622. The PVM 600 may also include a first side inlet 604, a second side inlet 606, and a third side inlet 608. In an exemplary embodiment, inlets 604, 606, and 608 flow toward the central path 622. As shown in FIG6, inlet 604t begins at the top portion 610 and flows into the central path 622 via inlet 604b in the bottom portion 620. Similarly, inlets 606t and 608t begin at the top portion 610 and flow into the central path 622 via inlets 606b and 608b in the bottom portion 620. In an exemplary embodiment, the reactants then flow along a spiral path 616 to allow for complete mixing of the reactants. In another exemplary embodiment, the mixture may then flow through a bottom central path 632 and then exit through an outlet 614 to be uniformly deposited on a substrate.

[0041] Therefore, the two portions 610 and 620 can be aligned together to provide a smooth transition from the side inlets 604, 606, and 608 to the spiral path 616. In an exemplary embodiment, all center paths 622 and the entire spiral path 616 are included in the bottom portion 620. Figure 6E As shown, when entrance 602 ends and center path 622 begins, top portion 610 connects to bottom portion 620. Figure 6A and Figure 6B As shown, the top portion 610 is recessed to allow the protruding bottom portion 620 to mate with the recessed top portion 610. The top portion 610 and the bottom portion 620 can be sealed at straight edges, as... Figure 6E As shown. In an exemplary embodiment, the first O-ring 652 may be used as a seal. In another exemplary embodiment, the second O-ring 654 may be used as a seal. In an exemplary embodiment, the top portion 610 also includes a cavity 634 to allow the tombstone manifold block to be coupled to the PVM 600.

[0042] Although this disclosure is provided in the context of certain embodiments and examples, those skilled in the art will understand that this disclosure extends beyond the specifically described embodiments to other alternative embodiments and / or uses of the embodiments, as well as their obvious modifications and equivalents. Furthermore, while several variations of embodiments of this disclosure have been shown and described in detail, other modifications based on this disclosure and within its scope will be apparent to those skilled in the art. Various combinations or sub-combinations of specific features and aspects of the embodiments are also contemplated, and such combinations or sub-combinations still fall within the scope of this disclosure. It should be understood that various features and aspects of the disclosed embodiments can be combined or substituted with each other to form different modes of embodiments of this disclosure. Therefore, the scope of this disclosure should not be limited to the specific embodiments described above.

[0043] The headings provided herein (if any) are for convenience only and do not necessarily affect the scope or meaning of the devices and methods disclosed herein.

Claims

1. A pulse valve manifold (PVM) assembly, comprising: PVM, the PVM comprising: A pipe section having an inlet to allow reactants to enter the PVM; A rectangular block segment having a top surface and a bottom surface, wherein the top surface is connected to the pipe segment; and A base section, the base section being connected to the bottom surface; The PVM is formed by two or fewer manifold sections, and the PVM is also configured to be connected to at least one tombstone manifold block. At least one wetting path is formed within the PVM to allow reactant gases to flow from the inlet to the outlet in the base section.

2. The PVM component as claimed in claim 1, wherein the PVM is a single unit.

3. The PVM component of claim 2, wherein the PVM is formed using an additive manufacturing process.

4. The PVM component of claim 1, wherein the wetting path comprises at least one spiral channel.

5. The PVM component of claim 1, wherein the wetting path comprises at least one C-shaped channel.

6. The PVM component of claim 1, wherein the wetting path includes at least one vortex channel.

7. The PVM component of claim 1, further comprising: Multiple tombstone manifold blocks are configured to be connected to the PVM; and Multiple C-shaped seals seal the at least one tombstone manifold block to the PVM.

8. The PVM assembly of claim 7, wherein the plurality of C-shaped seals are equal to or less than seven C-shaped seals.

9. The PVM component of claim 1, wherein the wetting path comprises: A central path, which is fluidly connected to the inlet; and Multiple side inlets, each of the multiple side inlets being configured to be fluidly connected to at least one of the multiple tombstone manifold blocks, wherein the multiple inlets are further fluidly connected to the central path; A hybrid channel, comprising at least one of a spiral channel or a vortex channel; and The outlet in the base section, wherein the outlet is fluidly connected to the mixing channel.

10. The PVM component of claim 1, wherein the PVM further comprises: First PVM section; and A second PVM portion is connected to the first PVM portion, wherein the wetting path is defined through the first PVM portion and the second PVM portion, such that the first PVM portion and the second PVM portion are in fluid communication; and The first PVM portion is sealed to the second PVM portion via two or fewer O-ring seals.

11. The PVM assembly of claim 10, wherein the first PVM portion is sealed to the second PVM portion via a single O-ring seal.

12. The PVM component as described in claim 10, The rectangular block segment includes a top rectangular segment and a bottom rectangular segment. The first PVM portion includes the pipe section and the top rectangular section. The second PVM portion includes the bottom rectangular section and the base section. The wetting path is further defined to pass through the top rectangular section and the bottom rectangular section, wherein the top rectangular section and the bottom rectangular section are fluidly connected.

13. The PVM component of claim 1, wherein the PVM component is coupled to the nozzle of the semiconductor processing system.

14. A two-part PVM component, comprising: The first PVM section includes a tube section having an inlet to allow reactants to enter the two PVM components. A second PVM portion is connected to the first PVM portion, and the second PVM portion has a base outlet for delivering the reactive stream to a nozzle in a semiconductor processing system. A wetting path, defined to pass through a first PVM path portion and a second PVM portion, such that the first PVM portion and the second PVM portion are in fluid communication, wherein the wetting path includes: A central path, which is fluidly connected to the inlet; A mixing section, included in the second PVM portion, fluidly connected to the central path and the base outlet; and Multiple side inlets are fluidly connected to the central path.

15. The two-part PVM assembly of claim 14, wherein each of the plurality of side entrances is defined within both the first PVM portion and the second PVM portion.

16. The two-part PVM component of claim 14, wherein the hybrid segment includes a spiral segment, and wherein the second PVM portion includes the central path.

17. The two-part PVM component of claim 14, wherein the mixing section includes a vortex section.

18. A single-part PVM, comprising: The outer segment includes: A tube section having an inlet to allow reactants to enter the single-part PVM; A columnar section having a top surface and a bottom surface, wherein the top surface is connected to the tube section; and A base section, the base section being connected to the bottom surface, the base section having a base outlet for directing the reactive stream to a nozzle in a semiconductor processing system; and Internal sections, the internal sections including: A wetting path, defined within the internal section, fluidly connecting the inlet to the outlet; and Multiple side inlets are fluidly connected to the wetting path.

19. The single-part PVM of claim 18, wherein the wetting path further comprises: A central path, wherein the plurality of side inlets are fluidly connected to the central path, and A spiral channel, wherein the spiral channel is fluidly connected to the central path and the base outlet.

20. The single-part PVM of claim 19, wherein the wetting path further comprises a C-shaped channel, wherein the plurality of side inlets are fluidly coupled to the C-shaped channel, and wherein the C-shaped channel is fluidly coupled to the central path.

Images