Semiconductor device, manufacturing method thereof and optical coupling method

Abstract

Methods of semiconductor device fabrication are provided. A method includes providing a device including a photonic die having a grating coupler. The method includes patterning an upper surface of the device to form a lens component configured to receive light from an upper surface of the photonic die. The method includes forming a first mirror configured to optically couple the lens component with the grating coupler according to an angle of incidence between the light and the grating coupler of less than about 15 degrees. The embodiment of the invention also relates to a semiconductor device, a manufacturing method thereof and an optical coupling method.

Description

Technical Field

[0001] Embodiments of this application relate to semiconductor devices and methods of manufacturing the same, as well as methods of optical coupling. Background Technology

[0002] Optical devices, such as those used in silicon photonics, are used in a variety of applications, including data communications, high-performance computing, sensing, and advanced imaging systems. Optical devices are fabricated by sequentially depositing an insulating or dielectric layer, a conductive layer, and an optical waveguide layer on a substrate and then patterning them using photolithography to define optical circuit components and elements. As the silicon photonics industry advances to support higher data rates, improved energy efficiency, and greater integration with electronic systems, challenges related to manufacturing precision, alignment, and optical loss have driven the development of new packaging technologies. Summary of the Invention

[0003] Some embodiments of this application provide a semiconductor device including: a photonic die including a waveguide; an electron die coupled to and perpendicularly spaced from the photonic die; a silicon-containing layer having a lens element configured to collimate light from a light source disposed above the electron die; and a first reflector configured to redirect light received from the lens element to the waveguide.

[0004] Other embodiments of this application provide a method for manufacturing a semiconductor device, comprising: providing a device including a photonic die having a grating coupler; patterning the upper surface of the device to form a lens component configured to receive light from the upper surface of the photonic die; and forming a first reflector configured to optically couple the lens component to the grating coupler according to an incident angle of less than about 15 degrees between the light and the grating coupler.

[0005] Further embodiments of this application provide an optical coupling method comprising: redirecting light received from the light source toward a lens component vertically disposed below the light source via a first reflector; collimating the light via the lens component; and redirecting the collimated light toward a grating coupler via a second reflector to couple the light to a waveguide. Attached Figure Description

[0006] Various aspects of the embodiments of this disclosure will be best understood from the following detailed description when read in conjunction with the accompanying drawings. It should be noted that, in accordance with standard industry practice, the various components are not drawn to scale. In fact, for clarity of discussion, the dimensions of the various components may be arbitrarily increased or decreased.

[0007] Figure 1 Examples of semiconductor devices including grating couplers coupled to a light source are shown according to some embodiments.

[0008] Figure 2 Another example of a semiconductor device including a grating coupler coupled to a light source, according to some embodiments, is shown.

[0009] Figure 3 Another example of a semiconductor device including a grating coupler coupled to a light source, according to some embodiments, is shown.

[0010] Figure 4 An exemplary flowchart of a method for optical coupling according to some embodiments is shown.

[0011] Figure 5 An exemplary flowchart of a method for manufacturing a semiconductor device according to some embodiments is shown.

[0012] Figure 6 , Figure 7 , Figure 8A , Figure 8B , Figure 9 , Figure 10 , Figure 11 , Figure 12 , Figure 13 , Figure 14 , Figure 15 and Figure 16 A semiconductor device according to some embodiments is shown. Figure 5 Exemplary cross-sectional views during the various manufacturing stages of the method. Detailed Implementation

[0013] The following disclosure provides numerous different embodiments or instances for implementing various features of the provided subject matter. Specific examples of components and arrangements are described below to simplify embodiments of this disclosure. Of course, these are merely examples and are not intended to be limiting. For example, in the following description, forming a first component on or over a second component may include embodiments where the first and second components are in direct contact, and may also include embodiments where an additional component may be formed between the first and second components, such that the first and second components are not in direct contact. Furthermore, reference numerals and / or characters may be repeated in various instances of embodiments of this disclosure. This repetition is for simplicity and clarity and does not in itself indicate a relationship between the various embodiments and / or configurations discussed.

[0014] Furthermore, for ease of description, this document may use spatial relative terms such as “below,” “under,” “lower,” “above,” “upper,” “top,” and “bottom” to describe the relationship of one element or component to another (or other) element or component as shown in the figures. In addition to the orientations depicted in the figures, spatial relative terms are intended to include different orientations of the device in use or operation. The device may be oriented in other ways (rotated 90 degrees or in other orientations), and the spatial relative descriptors used herein may be interpreted accordingly. References to “or” may be interpreted inclusively, such that any term described using “or” may refer to a single, more than one, or any of the described terms. References to at least one in a list of combinations of terms may be interpreted inclusively as OR, indicating a single, more than one, or any of the described terms. For example, a reference to “at least one of 'A' and 'B'” may include only 'A', only 'B', or both 'A' and 'B'. Such references used in conjunction with “including” or other disclosed terms may include additional items.

[0015] Typically, semiconductor devices can be coupled to a light source (e.g., an optical fiber) via edge coupling (where light is injected into the waveguide without an intermediate grating coupler) or vertical coupling (where light is directed to a grating coupler perpendicular to the waveguide). Compared to edge coupling, vertical coupling methods can suffer from greater losses (typically exceeding 3 dB), reduced bandwidth, polarization dependence, and other problems. However, vertical methods are often used because the technology is generally compatible with reduced alignment accuracy and a larger surface area available for coupling (e.g., the surface area of ​​a semiconductor die typically extends substantially beyond its edges). Furthermore, edge coupling can increase the lateral coverage area of ​​the semiconductor device, which can encourage the use of vertical coupling. Vertical coupling typically involves refractive index matching coupling between a vertically oriented light source and a grating coupler. For example, an optical fiber can be coupled to the die (e.g., via an optical gel).

[0016] According to embodiments of this disclosure, light is provided from a vertical light source to a grating coupler at a shallow angle (including angles less than about 15 degrees, e.g., about 2 degrees). The light source may include an optical fiber terminating in a lateral direction for use with a semiconductor device. Therefore, light emitted from the light source can be provided substantially parallel to the lateral surface of the semiconductor device. Adjusting a reflector can redirect the light to a silicon-based lens element, such as a bulk silicon (e.g., single-crystal silicon) or silicon nitride (Si3N4) lens element. The lens element can collimate the light before it is received by a second reflector. For example, the light source may extend above the lens element, such that adjusting the reflector can redirect the light downward through the lens element to the second reflector. The second reflector can then redirect the light towards the grating coupler at a shallow angle. Upon reception, the grating coupler can couple the light to a waveguide, such as an electronic die coupled to a photonic die including a waveguide, to perform various computational functions.

[0017] Depending on the incident angle between the grating coupler and the light, significant performance improvements (e.g., improved bandwidth) can be achieved compared to other methods using vertical coupling. In at least some cases, device performance can approach (or even exceed) that of edge-coupled devices. Furthermore, some of the complexities or drawbacks of edge coupling can be avoided.

[0018] The light source can be provided temporarily, such as for end-of-line testing, or permanently as an integral component of the semiconductor device. Furthermore, even when provided as an integral component, the light source can be coupled to other parts of the semiconductor die depending on the downstream process. Therefore, embodiments of this disclosure contemplate depicted examples of semiconductor devices integrally formed, and their constituent parts. For example, a first part including a light source coupled to an adjustment mirror and configured to be coupled to a substrate portion of the semiconductor device (e.g., via an alignment member) can be referred to as a semiconductor device. A second part including a collimating lens, another mirror, and a grating coupler can be referred to as another semiconductor device. When they are coupled (temporarily or permanently), the resulting assembly can also be referred to as (e.g., a single) semiconductor device, or as a system comprising two components constituting a semiconductor device, without limiting effect.

[0019] Figure 1An example of a semiconductor device 100, according to some embodiments, includes a grating coupler 120 coupled to a light source 102. The light source 102 is depicted as an optical fiber, which may include single-mode fiber, lensed fiber, high numerical aperture fiber, etc. A particular fiber may be selected based on desired bandwidth, alignment sensitivity, loss, and other criteria. Reference to the light source 102 may at least include the termination of the optical fiber (although such a light source may ultimately receive light from an upstream light source located at the opposite termination). Furthermore, further light sources 102 are contemplated, such as laser diodes or other aspects of further semiconductor dies. At least the depicted terminal portion of the light source 102 extends substantially perpendicular to the lateral surface of the semiconductor device 100. In some embodiments, the tolerance for the light source 102 may deviate slightly (e.g., within a few degrees). Individual downstream components may extend slightly beyond the intended position of the beam to accommodate such deviations and may be bent or lensed to at least partially correct such deviations. In some embodiments, the intended path for the light source 102 may be slightly off-center from the center of the transverse surface, such as to help with the tolerance of subsequent components or to facilitate their manufacture (e.g., where, depending on certain operations, certain angles, such as about 45 degrees, are easier to manufacture).

[0020] Light source 102 (along a transverse surface) provides light to adjustment mirror 104. Adjustment mirror 104 can redirect the light to deviate from the vertical direction by about 5-15 degrees (e.g., about 12 degrees). As depicted, adjustment mirror 104 can provide a curved mirror configured to focus any redirected light, which may help with subsequent collimation of the light or reduce the size of downstream components due to increased alignment accuracy. Adjustment mirror 104 can be coupled to at least one of light source 102 or lens component 106 via air gap 108, as depicted. In some embodiments, air gap 108 can replace another gap, such as a refractive index-matched gas, a vacuum-sealed cavity, or a gap providing mechanical support or electrical isolation, such as an aerogel or a low-refractive-index polymer. For this reason, the angle between the vertical axis and the light redirected from adjustment mirror 104 is sometimes referred to as air angle 110 without any limiting effect. For example, a deviation of about 5-15 degrees (e.g., about 12 degrees) in the vertical direction can be referred to as air angle 110. Light passes through the air gap 108 at an air angle of 110 and extends to the lens component 106.

[0021] Lens component 106 may be formed in a silicon-containing layer 142, which comprises silicon (e.g., is substantially composed of silicon). For example, single-crystal silicon can provide reduced loss, scattering, and absorption compared to other methods. Lens thickness 112 may extend between about 1 micrometer (μm) and about 50 μm. For example, in some embodiments, a lens thickness 112 of about 5 μm can effectively collimate directly received light. The total thickness 114 of silicon-containing layer 142 may be provided to be between about 100 μm and about 1000 μm (e.g., greater than about 300 μm in one embodiment, such as greater than about 700 μm). This thickness 114 can provide mechanical support, thermal isolation, etc. Therefore, silicon-containing layer 142 can be provided as a substrate having other depicted components formed thereon or coupled thereto. In some embodiments, at least a portion of silicon-containing layer 142 (e.g., at least a lens portion) may include silicon nitride, which can improve optical efficiency for low-frequency signals (e.g., below about 1.1 μm wavelength). In some embodiments, a silicon nitride substrate is provided, along with other materials configured to provide an optical path for light. The radius of curvature of the lens component 106 can be provided to be between about 100 μm and about 1000 μm (e.g., greater than about 600 μm).

[0022] The diameter 116 of the lens can be defined based on the provided range of curvature and thickness. For example, the lens diameter 116 can be provided to be between about 100 μm and about 200 μm, as this can avoid incident light loss. The diameter 116 can (but is not required to) be anisotropic, as in the case of an elliptical lens. Thus, the provided range can refer to the major or minor axis of an ellipse, as depicted in this cutting plane. In practice, in some embodiments, the various portions of the lens component 106 can be provided asymmetrically. For example, in cases where only a subset of the lens surface receives a large amount of light from the adjustment mirror 104, other portions of the lens component 106 can be provided to compensate for alignment misalignment, or other portions of the lens component 106 can be omitted to simplify device fabrication or improve density. More specifically, the lens component 106 can be configured to receive light along a portion (e.g., a hemisphere, as depicted), or can be provided as a hemispherical lens. Thus, collimation can at least slightly adjust the propagation angle of the light relative to the air angle 110. In some embodiments, adjusting the reflector 104 can focus light onto another lens portion, such as the geometric or optical center, which can help increase alignment tolerance or reduce component size.

[0023] As the collimated light passes through lens component 106, it can continue through the remainder of silicon layer 142 (e.g., substrate) to another mirror 118 configured to redirect the light to grating coupler 120. Redirection can provide light to grating coupler 120 at an angle of incidence configured to improve the bandwidth of optical coupling into the waveguide relative to a vertical cross (e.g., a shallow angle of incidence, similar to an edge-coupled device). Such a mirror 118 can exhibit a lateral width 122 (e.g., maximum diameter) between about 1 μm and about 700 μm (e.g., greater than about 100 μm) in this cut plane. The height 124 of mirror 118 can be slightly similar. For example, a height between about 1 μm and about 1000 μm (e.g., greater than about 300 μm) can be provided. The mirror angle 126 for mirror 118 can be greater than 45 degrees or within 10 degrees of 45 degrees, such as about 55 degrees. An angle greater than 45 degrees can increase the deflection to improve the angle of incidence with the grating coupler 120, while an angle closer to 45 degrees can make the manufacturing of the mirror 118 easier.

[0024] The geometric or optical center of the lens component 106 may be provided in a straight line with the mirror 118 (with zero vertical offset), or it may be offset relative to it. For example, in some embodiments, the geometric or optical center of the lens component 106 may be offset relative to the geometric or optical center of the mirror 118 by up to about 50 μm. In some embodiments, the mirror 118 comprises or is substantially composed of one or more metals, such as copper, gold, titanium nitride, tantalum nitride, aluminum, or other metals.

[0025] Mirror 118 provides substantially collimated light to grating coupler 120 at a relatively shallow mirror angle 126 between about 1 degree and about 15 degrees (e.g., about 2 degrees). The scan point of grating coupler 120 is the portion coupled to the waveguide with maximum efficiency. The distance to the scan point of grating coupler 120 (defined by mirror angle 126 and the thickness of any intermediate layer) can be between about 1 μm and about 1000 μm (e.g., greater than about 120 μm). For example, the intermediate layer may include an oxide layer 128 and a portion of a photonic die 130 (p-die 130) located above grating coupler 120. The oxide layer 128 may be between about 0 μm and 50 μm. For example, oxide layer 128 may be substantially similar in thickness to the electron die 132 (e-die 132) operatively coupled to p-die 130 via various via structures (such as bonded photonic via structure 134 or various metallization or waveguide layers 136, which may couple p-die 130 and e-die 132), and contribute to the vertical distance between mirror 118 and grating coupler 120. e-die 132 may include a further layer 144 comprising silicon having a thickness between about 0.1 and 1 μm, which may be laterally spaced from oxide layer 128 and separate e-die 132 from other silicon-containing layers 142. p-die 130 or e-die 132 may be further coupled to device terminals 140, such as including intermediate terminals for coupling to an interposer, circuit board, or further substrate.

[0026] The grating coupler 120 can be provided as a multi-groove grating coupler 120 with varying spacing and shape to improve noise suppression and achieve high bandwidth performance. However, as with other aspects of embodiments of this disclosure, such components can be modified (e.g., to provide improved suppression at specific frequencies and to improve suppression of any known or uncharacterized interference). The p-die 130 may include a back-side reflector 138 to improve the coupling efficiency between the grating coupler 120 and any waveguide or other photonic circuitry.

[0027] Figure 2Another example of a semiconductor device 100, including a grating coupler 120 coupled to a light source 102, is shown according to some embodiments. According to the depicted embodiment, a mirror 118 is formed in at least one of an oxide layer 128 or a p-die 130. This approach can reduce the vertical spacing between the mirror 118 and the grating coupler 120. The reduced vertical spacing can further reduce the angle of incidence between the grating coupler 120 and the light thus received, or reduce the lateral spacing between the grating coupler 120 and the mirror 118. The reduction in the angle of incidence can improve the bandwidth or efficiency of the optical coupling between the grating coupler 120 and other photonic components of the waveguide or p-die 130. The reduction in lateral spacing can improve device density because more circuitry can be included per unit lateral spacing.

[0028] Figure 3 Another example of a semiconductor device 100, including a grating coupler 120 coupled to a light source 102, is shown according to some embodiments. The adjusting mirror 104 is depicted as generally flat, which can reduce the complexity of certain manufacturing operations. In some embodiments, the adjusting mirror 104 is angled at approximately 45 degrees (e.g., adding or subtracting 10 degrees), which can further simplify its manufacturing. Although the planar adjusting mirror 104 is relative to... Figures 1 to 2 The bending example depicted can exhibit reduced light focusing, but the optical assembly can exhibit improved performance relative to various vertical coupling techniques. Furthermore, other aspects of the semiconductor device 100, such as the radius of the lens components, can be adjusted relative to embodiments employing the bending adjustment mirror 104, thereby mitigating the impact on device performance.

[0029] In the depicted example, adjusting mirror 104 redirects light received from light source 102 to mirror 118, similar to... Figure 1 The reflector 118. However, in some embodiments, the planar adjustment reflector 104 can redirect light to the reflector 118, which is perpendicularly spaced from the silicon-based portion of the semiconductor device 100, such as being perpendicularly aligned with the oxide layer 128 or the p-die 130 (e.g., Figure 2 (Reflector 118). In fact, various aspects of the drawings may be omitted, substituted, or interchanged according to the various components provided in the embodiments of this disclosure, or other known components of silicon photonic devices or related devices.

[0030] Figure 4 An exemplary flowchart of a method 400 for optical coupling according to some embodiments is shown. For example, this method can be implemented using various semiconductor devices 100 according to embodiments of this disclosure, such as… Figures 1 to 3 The semiconductor device 100, or those provided below. It should be noted that method 500 is merely an example and is not intended to limit the embodiments of this disclosure. Therefore, it should be understood that... Figure 4 Additional operations are provided before, during, or after Method 400, and some other operations may only be briefly described in this document.

[0031] In short, method 400 begins with operation 402, which redirects light from light source 102 to lens component 106. Next, method 400 proceeds to operation 404, which collimates the light. Next, method 400 proceeds to operation 406, which redirects the collimated light toward the grating coupler.

[0032] More specifically, in operation 402, the semiconductor device 100 may redirect light received from the light source 102 (which may include an optical fiber) toward a lens component 106 disposed vertically below the light source 102. For example, the light source 102 may refer to an optical fiber having a terminal portion extending parallel to the semiconductor device 100 (e.g., along its upper surface). In some embodiments, the optical fiber may extend vertically above the semiconductor device 100 and include curvature to transition to a lateral portion including the terminal. Redirecting the light received from the light source 102 may include transmitting light from the terminal of the optical fiber through an air gap 108 to a first reflector (adjusting reflector 104). For example, the adjusting reflector 104 may have, for example, […]. Figures 1 to 2 The curved surface depicted in the text or such Figure 3 The flat surface depicted in the text.

[0033] More specifically, in operation 404, adjusting the curved surface of mirror 104 can converge light towards a focal point on the second mirror (e.g., the flat surface of mirror 118) via air gap 108. For example, adjusting the curved surface of mirror 104 can redirect light to lens component 106 to collimate the light before it reaches the second mirror 118. Of course, the references to collimation or convergence should not be interpreted as demanding perfect results. For example, converged light may exhibit some defocus, and collimated light may exhibit some residual divergence.

[0034] More specifically, in operation 406, the second mirror 118 can redirect collimated light toward the grating coupler 120 to couple the light to the waveguide. For example, the second mirror 118 can provide light at a shallow angle of less than about 15 degrees (e.g., about 2 degrees). Such an angle can improve bandwidth and coupling efficiency compared to a steeper angle (e.g., perpendicular to the interface). The back-side reflector 138 or other components can further improve coupling efficiency.

[0035] The waveguide can then provide light to various circuits within the photonic die 130 that can be used to implement various computational functions (e.g., logic-based or memory-based functions) within the photonic die 130, including the waveguide. Furthermore, the photonic die 130 can be coupled to the electron die 132. For example, method 400 may include providing an indication of light detection to the electron die 132 using a coupled photonic via structure 134 communicatively coupled to the electron die 132 (this can then be used to perform further computational functions on or in a combination between the electron die 132 and the photonic die 130). The indication (like other inputs or outputs for the photonic die 130 and the electron die 132) can be further coupled to device terminals 140, as can be coupled to either the photonic die 130 or the electron die 132.

[0036] Figure 5 A flowchart of a method 500 for manufacturing a semiconductor device according to some embodiments is shown. For example, at least some of the operations (or steps) of method 500 can be used to form... Figures 1 to 3 The semiconductor device 100 comprises any one of the components depicted herein, as well as various other devices including combinations or alternatives to those components. After its manufacture and integration into various computing systems, the semiconductor device 100 formed according to this method 500 can be implemented. Figure 4 Method 400. It should be noted that method 500 is merely an example and is not intended to limit the embodiments of this disclosure. Therefore, it should be understood that... Figure 5 Additional operations are provided before, during, or after method 500, and some other operations may only be briefly described herein. For example, some anti-reflective coatings used in the photolithography process may affect the reflectivity of individual mirrors, lens components 106, and other components of embodiments of this disclosure.

[0037] In short, method 500 begins with operation 502 of providing a device including a photonic die 130 having a grating coupler 120. Next, method 500 proceeds to operation 504 of patterning the upper surface of the device (e.g., a substrate) to form a lens element 106 configured to receive light from the upper surface of the device. Next, method 500 proceeds to operation 506 of forming a mirror 118 configured to optically couple the lens element 106 to the grating coupler 120.

[0038] General Reference Figures 6 to 13 Semiconductor device 100 is provided in accordance with Figure 5 Cross-sectional views during each manufacturing stage of the method. More specifically, Figures 6 to 11 A cross-sectional view depicting an embodiment including a mirror 118 in a silicon-containing layer 142 is shown (e.g., Figure 1 Semiconductor device 100). Figures 12 to 13A cross-sectional view is depicted of an embodiment that includes a mirror 118 in the dielectric layer 128 or p-die 130. Figure 6 , Figure 8A , Figure 8B Such an embodiment may also be applicable. Although not depicted to avoid excessive repetition, according to... Figures 10 to 11 The description states that the light source 102 can be with Figures 12 to 13 The embodiments are coupled. Alternatively, alternatives may be used. Figures 10 to 11 The light source 102, the adjusting reflector 104, and other aspects are used to still achieve further embodiments (e.g., such as...). Figure 3 (As depicted in the text).

[0039] Corresponding to Figure 5 Operation 502, Figure 6 A device (e.g., semiconductor device 100) including a photonic die 130 and a grating coupler 120 is shown. For example, the device may include an electron die 132 and an oxide layer 128 coupled to the photonic die 130, as described above. Figures 1 to 3 The depicted device can be formed by coupling the upper surface of photonic die 130 to the lower surface of electron die 132, as depicted. A dielectric layer 128 (e.g., an oxide layer) can provide mechanical support for portions of photonic die 130 that are not mechanically connected to electron die 132. Such an arrangement can provide an optical path through dielectric layer 128 to grating coupler 120, with electron die 132 positioned close to the waveguide arrangement to improve transmission loss and delay relative to other device geometries. Of course, the geometries shown should not be construed as limiting, and various further device geometries are considered, as they may vary depending on their function. Dielectric layer 128 and electron die 132 can be coupled to substrate 602, such as a single-crystal silicon substrate 602 or a silicon nitride substrate 602, or a further silicon-containing layer 142 may be provided. In some embodiments, silicon-containing layer 142 may replace other materials configured as lenses and transmitting frequencies for radiation of interest (e.g., photons).

[0040] Corresponding to Figure 5 Operation 504 Figure 7 A device 600 (e.g., semiconductor device 100) including a patterned upper surface 700 is shown. The patterned upper surface 700 includes alignment features 702, which may aid in the positioning of the semiconductor device 100. For example, the alignment features 702 may provide reference markers to aid in the formation of further layers stacked above the semiconductor device 100. The patterned upper surface 700 includes a lens feature 106 and a cavity 704 extending below the lens feature 106. At least the alignment features 702 and the lens feature 106 may be formed according to the same removal process, as described above. Figure 8A and Figure 8B Further description.

[0041] Cavity 704 may be formed by the same removal process or another removal process. For example, in some embodiments, cavity 704 is formed by providing etchant through upper surface 700, such as by replacing the cap above cavity 704 after its removal, or by performing undercutting with a wet etchant to retain the upper surface of substrate 602. In some embodiments, the upper surface of substrate 602 is not retained (e.g., cavity 704 may be an opening exposed to upper surface 700). In some embodiments, cavity 704 (and the mirror 118 potentially formed therein) is formed from the back side of substrate 602 (e.g., before coupling with or forming dielectric layer 128 or die 132). Device terminal 140 is depicted as coupled to photonic die 130, as it may carry computational inputs or outputs associated with photonic die 130 or die 132.

[0042] Continue to correspond to Figure 5 Operation 504 Figure 8A A contour drawing of a lens component 106 according to an illustrative environment is depicted. Each stepped layer can approximate the radius of curvature 802 of the lens component 106. Each of the stepped layers can be formed according to various positive or negative photolithography processes. Furthermore, based on the corner roll-off from the removal (e.g., etching) from each layer, the lens component 106 can be aligned even more closely with the radius of curvature 802 than the depicted example including vertical sidewalls. Furthermore, the number of steps can be adjusted to improve the consistency between the stepped layers and the target curvature. For example, the depicted example includes n steps of 4, producing a first layer 804, a second layer 806, a third layer 808, and a fourth layer 810. Examples of 5, 6, or 7 steps can exhibit a match with an increasing target curvature but increase manufacturing complexity. Conversely, examples of 3 steps can exhibit a match with a decreasing target curvature but reduce manufacturing complexity.

[0043] Figure 8B A top view of the lens component 106 is depicted. More specifically, Figure 8B The lens component 106 is depicted as a circular lens component 106. Further examples may include elliptical or other asymmetrical lens components 106. The same etching process used to form the depicted lens component 106 can be used to form the alignment component 702. For example, the same mask pattern can be used in n steps to form the alignment component 702 having sidewalls that are substantially perpendicular to the surface of the lens component 106.

[0044] Corresponding to Figure 5 Operation 506 Figure 9A device (e.g., semiconductor device 100) including a mirror 118 formed in a silicon-containing layer 142 (e.g., substrate 602) is illustrated. The mirror 118 can be formed according to various processes depending on a specific device flow. For example, the metal of the mirror 118 can be deposited along the sidewalls of the cavity 704 according to a conformal process (e.g., a conformal process selective for the silicon-containing layer 142). In some embodiments, the mirror 118 can be formed by depositing metal using an electroplating process. Thus, the mirror 118 can fill the cavity 704, as it can be partially removed later, leaving the depicted mirror 118 (or other metal can remain in place). According to various embodiments, the mirror 118 can be formed of a material deposited through the upper surface 700 or back side of the silicon-containing layer 142 (e.g., before the formation of the dielectric layer 128, or through a back side opening of the dielectric layer 128).

[0045] Further corresponding to Figure 5 Method 500 Figure 10 The coupling of adhesive 1002 to a silicon-containing layer 142 (e.g., substrate 602) is illustrated. Adhesive 1002 is configured to couple a light source 102 to a device formed according to operations 502-506. For example, the light source 102 may be provided together with an adjustment mirror 104 and a further substrate, as... Figure 11 As depicted in the text.

[0046] In some embodiments, adhesive 1002 is provided as a permanent bonding adhesive 1002. For example, in the case where light source 102 is an operating component of semiconductor device 100, permanent adhesive 1002 can couple light source 102 to other parts of the device as an integral part of semiconductor device 100. In some embodiments, adhesive 1002 is provided as a peelable adhesive 1002, such as in the case of temporary coupling (e.g., for production line end testing, where light source 102 is a test device). For example, adhesive 1002 can be provided to mechanically couple light source 102 and a second reflector (adjustment reflector 104) to the device. Light source 102 can be used to test photonic die 130 or electron die 132 coupled to photonic die 130. After testing, peelable adhesive 1002 can be removed. For example, radiation (e.g., UV light) can be used to peel off photosensitive adhesive 1002, heat can be applied to peel off thermosensitive adhesive 1002, or solvent can be used to peel off solvent-sensitive adhesive 1002. Further corresponding sub-operations can release further temporary bonding adhesives (e.g., pressure-sensitive adhesives, electrorelease adhesives, etc.).

[0047] Further corresponding to Figure 5 Method 500 Figure 11A light source 102 coupled to an adhesive 1002 and an adjustment mirror 104 (as well as a further substrate 1102, which may be provided as a semiconductor or carrier substrate 1102) are shown. As depicted, the light source 102 is optically coupled to transmit light along the lateral surface of a device having a lens element 106. The adjustment mirror 104 redirects light to the lens element 106 according to the alignment between the adjustment mirror 104 and the lens element 106 (and so for the further mirror 118, grating coupler 120, waveguide, etc.).

[0048] Alignment member 702 can be used to maintain alignment between adjustment mirror 104 and other components of the semiconductor. In some embodiments, alignment member 702 can be used to apply adhesive 1002, such as including its own alignment member 702 for coupling with light source 102. In some embodiments, alignment member 702 is detectable (e.g., visible) by adhesive 1002. In some embodiments, adhesive 1002 is coupled to light source 102, further substrate 1102, and adjustment mirror 104 before mechanical coupling with other parts of semiconductor device 100. In some embodiments, intermediate layer 1104 separates adhesive 1002 from silicon-containing layer 142 (e.g., substrate 602), such as improving alignment implementation. A plurality of alignment members 702 can couple a plurality of light sources 102 to corresponding lens components disposed above the surface of semiconductor device 100, such as achieving a density of several fibers per square millimeter, or a higher effective density for some devices (such as those using optical strips).

[0049] Corresponding to Figure 5 Operation 504 Figure 12 A device 600 (e.g., semiconductor device 100) including a patterned upper surface 700 is shown. The patterned upper surface 700 is similar to... Figure 7 The upper surface 700 is provided. However, the following is omitted. Figure 7 The cavity 704 is a silicon-containing layer 142, and another cavity 704 is provided in at least one of the dielectric layer 128 or the p-die 130. For example, the cavity 704 may be formed according to back-side etching of the p-die 130, spacers formed in the dielectric layer 128 (e.g., spacers formed before the dielectric layer 128 is formed over the substrate 602), or various further techniques.

[0050] Corresponding to Figure 5 Operation 506 Figure 13 A device (e.g., semiconductor device 100) including a reflector 118 is shown. The reflector 118 can be formed according to various techniques, as described above. Figure 9Some examples are described. However, the reflector 118 is formed in at least one of the p-die 130 or the oxide layer 128. Therefore, such a reflector can be formed by back-side etching of the p-die 130 (e.g., before forming the device terminal 140) or according to further removal techniques known in the art, regarding, for example... Figure 9 or Figure 12 Some examples are described. The depicted mirror 118 can be configured to receive light from the adjustment mirror 104 and to focus the received light onto the grating coupler 120. Such an adjustment mirror 104 can be implemented in various geometries. Examples of such adjustment mirrors 104 will be described later. Figure 14 and Figure 15 The examples are depicted herein. However, the depicted examples should not be construed as limiting. For example, further embodiments may produce a planar adjustment mirror 104 (e.g., as described above). Figure 3 (As depicted in the text).

[0051] Now for reference Figure 14 The adhesive 1002 is coupled to the silicon-containing layer 142 (e.g., substrate 602). The adhesive 1002 can be provided as a permanent or peelable adhesive. For example, the adhesive 1002 can be as described above regarding... Figure 10 Provided as described.

[0052] Now for reference Figure 15 The light source 102, the adjusting mirror 104, and the carrier substrate 1102 are coupled to the semiconductor device 100 (e.g., using an adhesive layer 1002). The light source 102 and the adjusting mirror 104 can be configured to provide light to a further depicted mirror 118. For example, light, such as light lensed by a lens component, can be focused onto the grating coupler 120 via the mirror 118. The light source 102, the adjusting mirror 104, and the carrier substrate 1102 can be provided as described throughout the embodiments of this disclosure (e.g., according to...). Figure 11 (as described above).

[0053] Further corresponding to Figure 5 Method 500 Figure 16 Semiconductor devices 100 formed using various embodiments of the first semiconductor device 100A according to embodiments of the present disclosure are illustrated. For example, the depicted semiconductor device 100 may include the first semiconductor device 100A (e.g., Figures 1 to 3The first semiconductor device 100A comprises a semiconductor device 100A and a second semiconductor device 100B laterally spaced therefrom. The first semiconductor device 100A may include many depicted instances of optical circuitry (e.g., thousands or millions). However, the lateral spacing 1602 may be less than the minimum spacing required for edge coupling processes. However, a light source may be provided to the first semiconductor device 100A via an upper surface, which may include a vertical extension away from the surface and a lateral extension close to the surface.

[0054] A first semiconductor device 100A may be coupled to a substrate 1604 (such as an interposer, circuit board, or other connection for a multi-chip module) via device terminals 140A. A second semiconductor device 100B may be coupled to the substrate 1604 via further device terminals 140B. In some embodiments, the substrate 1604 includes further device terminals 140 configured to couple to a further substrate or other devices. Interconnections of device terminals 140 between the various portions may include power, clock, data, memory, and other interconnections configured to exchange computational signals to combine, store, or otherwise process data. For example, such processing may include any combination of electrical and optical signals. Of course, the examples depicted are merely illustrative, and various further combinations of devices are contemplated. For example, devices may be coupled via die or wafer bonding or other interconnection methods.

[0055] In one aspect of this disclosure, a semiconductor device is provided. The semiconductor device includes: a photonic die including a waveguide; an electron die coupled to and perpendicularly spaced from the photonic die; a silicon-containing layer having lens elements to collimate light from a light source disposed above the electron die; and a first reflector (e.g., disposed in the silicon-containing layer or adjacent to the electron die). The first reflector can redirect light received from the lens elements to the waveguide.

[0056] In another aspect of this disclosure, a method for manufacturing a semiconductor device is provided. The method includes providing a device including a photonic die having a grating coupler. The method includes patterning the upper surface of the device to form a lens element configured to receive light from the upper surface of the photonic die. The method includes forming a first mirror configured to optically couple the lens element to the grating coupler according to an incident angle of less than about 15 degrees between the light and the grating coupler.

[0057] In another aspect of this disclosure, a method for optical coupling is provided. The method includes redirecting light received from a light source towards a lens component vertically positioned below the light source via a first reflecting mirror. The method also includes collimating the light via the lens component. Furthermore, the method includes redirecting the collimated light towards a grating coupler via a second reflecting mirror to couple the light to a waveguide.

[0058] As used herein, the terms “about” and “approximately” generally indicate a value of a given amount that may vary based on a specific technology node related to the subject semiconductor device. Based on a specific technology node, the term “about” may indicate a value of a given amount that varies within, for example, 10-30% of the value (e.g., +10%, ±20%, or ±30% of the value).

[0059] Some embodiments of this application provide a semiconductor device including: a photonic die including a waveguide; an electron die coupled to and perpendicularly spaced from the photonic die; a silicon-containing layer having a lens element configured to collimate light from a light source disposed above the electron die; and a first reflector configured to redirect light received from the lens element to the waveguide.

[0060] In some embodiments, the semiconductor device further includes: a grating coupler for injecting light received from the lens element into the waveguide, wherein the first reflector is disposed in the silicon-containing layer or adjacent to the electron die. In some embodiments, the semiconductor device further includes: the light source; and a second reflector laterally spaced from the light source and optically coupled to the first reflector via an air gap. In some embodiments, the second reflector is a curved reflector. In some embodiments, the semiconductor device further includes: an alignment member configured to align a first portion of the semiconductor device including the first reflector, the photonic die, and the electron die with a second portion of the semiconductor device including the second reflector and the light source.

[0061] Other embodiments of this application provide a method for manufacturing a semiconductor device, comprising: providing a device including a photonic die having a grating coupler; patterning the upper surface of the device to form a lens component configured to receive light from the upper surface of the photonic die; and forming a first reflector configured to optically couple the lens component to the grating coupler according to an incident angle of less than about 15 degrees between the light and the grating coupler.

[0062] In some embodiments, the method further includes coupling the photonic die to an electron die to form the semiconductor device, wherein a lower surface of the electron die is coupled to the upper surface of the photonic die, and a dielectric layer separates the lens element from the photonic die, wherein light is transmitted from the first mirror through the dielectric layer to the grating coupler. In some embodiments, the lens element and the first mirror are formed in a silicon-containing layer, the silicon-containing layer being formed above the dielectric layer. In some embodiments, the method further includes forming the first mirror below the silicon-containing layer in at least one of the following: the dielectric layer; or the photonic die. In some embodiments, the method further includes optically coupling a light source configured to transmit light along a lateral surface of the device to the lens element. In some embodiments, the optical coupling between the light source and the lens element includes a second mirror spaced laterally from the light source and perpendicularly from the first mirror. In some embodiments, the method further includes: coupling the light source and the second reflector to the device using a peelable adhesive; testing the photonic die or an electron die coupled to the photonic die with the light source; and peeling off the peelable adhesive to remove the light source from the photonic die or the electron die. In some embodiments, the method further includes: coupling the light source and the second reflector to the device using a permanent bonding adhesive, wherein the light source is an operational component of the semiconductor device. In some embodiments, the second reflector has a curved surface to focus the light onto the first reflector; and the lens component is configured to collimate the light onto a flat surface of the first reflector. In some embodiments, the method further includes: etching an alignment component during the same etching process as the lens component; and coupling the light source to the device based on the alignment component. In some embodiments, the light source includes an optical fiber, wherein at least a portion of the optical fiber extends parallel to the lateral surface of the semiconductor device.

[0063] Further embodiments of this application provide an optical coupling method comprising: redirecting light received from the light source toward a lens component vertically disposed below the light source via a first reflector; collimating the light via the lens component; and redirecting the collimated light toward a grating coupler via a second reflector to couple the light to a waveguide.

[0064] In some embodiments, the angle of incidence between the lateral surface of the grating coupler and the light is less than about 15 degrees. In some embodiments, redirecting the light received from the light source includes focusing the light onto a focal point on a flat surface of the second mirror based on the curved surface of the first mirror. In some embodiments, the method further includes providing an indication of the detection of the light to the electron die using a bonded photonic via structure that communicatively couples the photonic die to the electron die.

[0065] The foregoing outlines features of several embodiments to enable those skilled in the art to better understand various aspects of the embodiments of this disclosure. Those skilled in the art should understand that they can readily use the embodiments of this disclosure as a basis to design or modify other processes and structures for performing the same purposes and / or achieving the same advantages as the embodiments described herein. Those skilled in the art should also recognize that such equivalent constructions do not depart from the spirit and scope of the embodiments of this disclosure, and that various changes, substitutions, and alterations can be made herein without departing from the spirit and scope of the embodiments of this disclosure.

Claims

1. A semiconductor device, comprising: Photonic chip, including waveguide; An electron chip, coupled to the photonic chip and perpendicularly spaced from the photonic chip; A silicon-containing layer having a lens component configured to collimate light from a light source positioned above the electron tube die; as well as A first reflecting mirror is configured to redirect light received from the lens component to the waveguide.

2. The semiconductor device according to claim 1, further comprising: A grating coupler is used to inject light received from the lens component into the waveguide, wherein the first reflector is disposed in the silicon-containing layer or next to the electron die.

3. The semiconductor device according to claim 1, further comprising: The light source; as well as The second reflector is laterally spaced from the light source and optically coupled to the first reflector via an air gap.

4. The semiconductor device according to claim 3, wherein, The second reflector is a curved reflector.

5. The semiconductor device according to claim 3, further comprising: The alignment component is configured to align a first portion of the semiconductor device, including the first reflector, the photonic die, and the electron die, with a second portion of the semiconductor device, including the second reflector and the light source.

6. A method for manufacturing a semiconductor device, comprising: Provide devices including photonic chips with grating couplers; The upper surface of the device is patterned to form a lens component configured to receive light from the upper surface of the photonic die; as well as A first reflecting mirror is configured to optically couple the lens component to the grating coupler based on an incident angle of less than about 15 degrees between the light and the grating coupler.

7. The method according to claim 6, further comprising: The photonic die and the electron die are coupled to form the semiconductor device, wherein the lower surface of the electron die is coupled to the upper surface of the photonic die, and a dielectric layer separates the lens component from the photonic die, wherein light is transmitted from the first mirror through the dielectric layer to the grating coupler.

8. The method according to claim 7, wherein, The lens component and the first reflector are formed in a silicon-containing layer, which is formed above the dielectric layer.

9. The method of claim 7, further comprising forming the first reflector in at least one of the following below beneath the silicon-containing layer: The dielectric layer; or The photonic chip.

10. A method for optical coupling, comprising: The light received from the light source is redirected by the first reflecting mirror toward the lens component that is vertically positioned below the light source; The light is collimated by the lens component; as well as The collimated light is redirected toward the grating coupler by a second mirror to couple the light to the waveguide.

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