Ion cache type flexible all-solid-state electrochromic device and preparation method thereof

Abstract

The invention provides an ion cache type flexible all-solid-state electrochromic device and a preparation method thereof. The ion cache type flexible all-solid-state electrochromic device comprises a first flexible base layer, a first conductive layer, a partitioned ion cache layer, an electrochromic layer, a solid electrolyte layer, a counter electrode layer, a second conductive layer and a second flexible base layer which are sequentially stacked, and the partition ion cache layer is provided with a grid type ion cache unit. According to the flexible electrochromic device provided by the invention, ion release and storage are provided by using the ion buffer layer designed in a partition form, lithium ion supply is supplemented for ion transmission blocking caused in the bending process of the device, and the electrochromic performance of the all-solid-state electrochromic device under the bending condition is improved; the attenuation rate of dimming amplitude when the device is bent is effectively reduced, and the dimming uniformity is improved.

Description

Technical Field

[0001] This invention belongs to the field of electrochromic technology, specifically relating to an ion-buffered flexible all-solid-state electrochromic device and its preparation method. Background Technology

[0002] Electrochromic devices, due to their advantages such as reversible adjustment of optical transmittance and low energy consumption, have shown broad application prospects in fields such as smart windows and wearable devices. Compared with liquid or gel electrolyte devices, all-solid-state electrochromic devices have become a current research hotspot due to their lack of leakage risk, strong environmental adaptability, and high structural stability. With the rapid development of flexible electronics and curved displays, the demand for flexible all-solid-state electrochromic devices that can adapt to bending and folding is becoming increasingly urgent.

[0003] However, existing flexible all-solid-state electrochromic devices face severe reliability challenges in practical bending applications. Due to the differences in mechanical properties of the materials in each functional layer, the stress generated by repeated bending can easily induce microcracks or delamination at the interlayer interfaces, disrupting the continuity of ion transport channels and causing localized obstruction of lithium-ion transport between the electrochromic layer and the electrolyte layer. Simultaneously, the uneven distribution of bending stress can cause lithium-ion consumption to be too rapid in certain areas of the device, while the overall device system cannot achieve precise regional replenishment, leading to problems such as localized dimming of the color, decreased response speed, and complete failure of uneven dimming settings. This bottleneck severely restricts the widespread adoption of such devices in applications requiring frequent bending or small curvature radii.

[0004] To address the aforementioned issues, existing technologies primarily focus on two aspects for improvement: First, at the material and interface level, self-healing interface layers based on supramolecular interactions, such as ureidopyrimidinones, are introduced to repair cracks using reversible hydrogen bonds. However, these primarily target physical crack repair and cannot fundamentally solve the problem of localized lithium-ion loss and replenishment. The number of repair cycles is limited, and the device lacks adaptability to smaller bending radii. Second, the concentration of lithium salts in the solid electrolyte is increased. However, simply increasing the lithium-ion concentration can easily lead to electronic conductivity imbalance, decreased mechanical strength, and ion aggregation, which in turn affects the overall response speed and cycle stability of the device.

[0005] Therefore, there is an urgent need to provide a flexible all-solid-state electrochromic device design to address current shortcomings and improve its bending resistance and bending color uniformity. Summary of the Invention

[0006] The purpose of this invention is to provide an ion-buffered flexible all-solid-state electrochromic device and its preparation method, thereby improving the bending performance of the flexible all-solid-state electrochromic device.

[0007] To achieve this objective, the present invention adopts the following technical solution:

[0008] In a first aspect, the present invention provides an ion-buffered flexible all-solid-state electrochromic device, the ion-buffered flexible all-solid-state electrochromic device comprising, in sequence, a first flexible substrate, a first conductive layer, a partitioned ion-buffered layer, an electrochromic layer, a solid electrolyte layer, a counter electrode layer, a second conductive layer, and a second flexible substrate; the partitioned ion-buffered layer comprises a mesh-type ion-buffered unit.

[0009] The electrochromic device provided by this invention adopts a stacked symmetrical structure. A partitioned ion buffer layer, with partitioned ion buffer units designed in a partitioned manner, is set between the outer first conductive layer and the electrochromic layer. Each ion buffer unit contains a solid electrolyte material, exhibiting good lithium-ion storage capacity and chemical stability, thus providing ion storage functionality. When the device is subjected to external bending, microcracks are generated between the layers in the bending region, which hinders ion transport in the solid electrolyte layer, resulting in insufficient ion supply to the electrochromic layer in this region. At this time, the ion buffer unit in the corresponding region will rapidly release the stored Li-ion electrolyte. + The ion buffer is replenished to the electrochromic layer to ensure that the ion deintercalation / intercalation reaction proceeds and that the device changes color uniformly. When the bending stress of the device disappears, the ion buffer unit can be replenished by ions in the solid electrolyte layer to store lithium ions, forming a "storage-release" cycle mechanism.

[0010] Preferably, the material of the mesh-type ion buffer unit includes Li3PO4 and / or Li2SO3.

[0011] The Li3PO4 solid-state buffer material has an ion storage capacity of 2.3 mmol / g and an ion release rate of 0.05 mol / (g·s). It exhibits stable performance over a wide operating temperature range of -20 to 60℃. Both Li3PO4 and Li2SO3 materials possess excellent lithium-ion storage capacity and chemical stability, demonstrate good compatibility with solid-state electrolyte materials, and can produce a good ion replenishment effect.

[0012] Preferably, the mesh-type ion buffer unit is rectangular and / or hexagonal in shape.

[0013] By using a grid-like cache unit with a specific shape, a tight arrangement between units can be formed, resulting in more uniform ion replenishment coverage, which can be adapted to application scenarios with large curvature surfaces.

[0014] Preferably, the side length of the mesh-type ion buffer unit is 4-6 mm, for example, it can be 4 nm, 4.5 nm, 5 nm, 5.5 nm or 6 nm, but is not limited to the listed values. Other unlisted values ​​within the range are also applicable.

[0015] Preferably, the mesh-type ion buffer unit is formed by insulating separator strips.

[0016] Preferably, the width of the insulating separator is 100-200nm, for example, it can be 100nm, 125nm, 150nm, 175nm or 200nm, but is not limited to the listed values. Other unlisted values ​​within the range are also applicable.

[0017] Preferably, the insulating separator is made of polyimide.

[0018] Preferably, the thickness of the partitioned ion buffer layer is 1-2 μm, for example, it can be 1 μm, 1.2 μm, 1.5 μm, 1.8 μm or 2 μm, but is not limited to the listed values. Other unlisted values ​​within the range are also applicable.

[0019] Preferably, the thickness of the electrochromic layer is 300-500nm, for example, it can be 300nm, 350nm, 400nm, 450nm or 500nm, but is not limited to the listed values. Other unlisted values ​​within the range are also applicable.

[0020] Preferably, the material of the electrochromic layer includes tungsten trioxide (WO3).

[0021] Preferably, the thickness of the solid electrolyte layer is 2-3 μm, for example, it can be 2 μm, 2.2 μm, 2.5 μm, 2.8 μm or 3 μm, but is not limited to the listed values. Other unlisted values ​​within the range are also applicable.

[0022] Preferably, the material of the solid electrolyte layer includes a LiPO4-P2O5 composite electrolyte.

[0023] Preferably, in the LiPO4-P2O5 composite electrolyte, the content of LiPO4 is 60-80 mol% and the content of P2O5 is 20-40 mol%.

[0024] The content of LiPO4 can be 60 mol%, 65 mol%, 70 mol%, 75 mol%, or 80 mol, and the content of P2O5 can be 20 mol%, 25 mol%, 30 mol%, 35 mol%, or 40 mol, but is not limited to the listed values. Other unlisted values ​​within the range are also applicable.

[0025] The LiPO4-P2O5 composite electrolyte is a lithium phosphate glassy composite electrolyte belonging to the Li2O-P2O5 system, in which the molar ratio of Li2O to P2O5 is (0.8-1.2):1, and its ionic conductivity is 1.2 × 10⁻⁶. -3 S / cm, which can be well adapted to ion buffer units.

[0026] Preferably, the thickness of the ion-buffered flexible all-solid-state electrochromic device is 50-100μm, for example, it can be 50μm, 60μm, 70μm, 80μm, 90μm or 100μm, but is not limited to the listed values. Other unlisted values ​​within the range are also applicable.

[0027] Preferably, the thickness of the counter electrode layer is 200-400nm, for example, it can be 200nm, 250nm, 300nm, 350nm or 400nm, but is not limited to the listed values. Other unlisted values ​​within the range are also applicable.

[0028] Preferably, the material of the counter electrode layer includes nickel oxide (NiO).

[0029] Preferably, the thickness of the first conductive layer is 100-150nm, for example, it can be 100nm, 110nm, 120nm, 130nm, 140nm or 150nm, but is not limited to the listed values. Other unlisted values ​​within the range are also applicable.

[0030] Preferably, the material of the first conductive layer includes indium tin oxide (ITO).

[0031] Preferably, the thickness of the second conductive layer is 100-150nm, for example, it can be 100nm, 110nm, 120nm, 130nm, 140nm or 150nm, but is not limited to the listed values. Other unlisted values ​​within the range are also applicable.

[0032] Preferably, the material of the second conductive layer includes indium tin oxide (ITO).

[0033] Preferably, the material of the first flexible base layer includes polyethylene terephthalate (PET).

[0034] Preferably, the material of the second flexible base layer includes polyethylene terephthalate (PET).

[0035] Preferably, the thickness of the first flexible base layer and the second flexible base layer are independently 20-30μm, for example, 20μm, 22μm, 25μm, 28μm or 30μm, but not limited to the listed values, and other unlisted values ​​within the range are also applicable.

[0036] In a second aspect, the present invention provides a method for fabricating the ion-buffered flexible all-solid-state electrochromic device described in the first aspect, the method comprising the following steps:

[0037] A first conductive layer is deposited on a first flexible substrate using magnetron sputtering. A second conductive layer, a counter electrode layer, a solid electrolyte layer, and an electrochromic layer are then sequentially deposited on a second flexible substrate. A partitioned ion buffer layer is prepared on the electrochromic layer. The first and second flexible substrates are then aligned, pressed together, and encapsulated to obtain the ion buffer type flexible all-solid-state electrochromic device.

[0038] Preferably, the method for preparing the partitioned ion buffer layer includes: forming insulating separators by coating a material according to a mesh structure; mixing lithium salt, organic precursor and solvent to form a precursor solution; filling the precursor solution into the partitions formed by the insulating separators; and performing pre-drying and curing heat treatment in sequence.

[0039] Preferably, the organic precursor comprises phosphate esters and / or phosphites.

[0040] Preferably, the phosphate ester compound includes triethyl phosphate and / or trimethyl phosphate.

[0041] Preferably, the phosphite compound includes triethyl phosphite and / or trimethyl phosphite.

[0042] Preferably, the pre-drying temperature is 50-70°C, for example, it can be 50°C, 55°C, 60°C, 65°C or 70°C, but is not limited to the listed values. Other unlisted values ​​within the range are also applicable.

[0043] Preferably, the curing heat treatment temperature is 120-150℃, for example, it can be 120℃, 130℃, 140℃ or 150℃, but is not limited to the listed values, and other unlisted values ​​within the range are also applicable.

[0044] At this curing temperature, the precursor of the ion buffer unit undergoes a curing reaction, generating a dense ion buffer layer.

[0045] Preferably, the preparation method further includes: performing plasma treatment on the surface of the first conductive layer and / or the electrochromic layer before preparing the partitioned ion buffer layer.

[0046] Compared with the prior art, the present invention has the following beneficial effects:

[0047] The flexible electrochromic device provided by this invention utilizes a partitioned ion buffer layer to provide ion release and storage, supplementing the lithium-ion supply to compensate for the ion transport obstruction caused by the bending process of the device, improving the electrochromic performance of the all-solid-state electrochromic device under bending conditions, effectively reducing the attenuation rate of the dimming amplitude under bending, and improving the dimming uniformity. Attached Figure Description

[0048] Figure 1 This is a schematic diagram of the structure of the ion-buffered flexible all-solid-state electrochromic device provided in Example 1;

[0049] Wherein, 1 is a first flexible substrate; 2 is a first conductive layer; 3 is a partitioned ion buffer layer; 4 is an electrochromic layer; 5 is a solid electrolyte layer; 6 is a counter electrode layer; 7 is a second conductive layer; and 8 is a second flexible substrate. Detailed Implementation

[0050] The technical solution of the present invention will be further illustrated below through specific embodiments. Those skilled in the art should understand that the embodiments described are merely illustrative of the present invention and should not be construed as limiting the invention in any way.

[0051] In this invention, the electrochromic functional layers, including the first conductive layer, the electrochromic layer, the solid electrolyte layer, the counter electrode layer, and the second conductive layer, are manufactured using process parameters commonly used in the art, without any special limitations.

[0052] Example 1

[0053] This embodiment provides a method such as Figure 1 The ion-buffered flexible all-solid-state electrochromic device shown includes a first flexible base layer 1, a first conductive layer 2, a partitioned ion-buffered layer 3, an electrochromic layer 4, a solid electrolyte layer 5, a counter electrode layer 6, a second conductive layer 7, and a second flexible base layer 8, which are stacked sequentially.

[0054] Both the first flexible base layer 1 and the second flexible base layer 8 are flexible PET layers with a thickness of 25μm.

[0055] The first conductive layer 2 is a transparent ITO conductive layer with a thickness of 120nm.

[0056] The partitioned ion buffer layer 3 includes rectangular ion buffer units separated by insulating separators. The material of the ion buffer units is Li3PO4, and the material of the insulating separators is polyimide. The side length of each ion buffer unit is 5 mm, and the width of each insulating separator is 150 nm. The thickness of the partitioned ion buffer layer 3 is 1.5 μm.

[0057] The electrochromic layer 4 is made of tungsten trioxide (WO3) and has a thickness of 400 nm.

[0058] The solid electrolyte layer 5 is made of LiPO4-P2O5 composite electrolyte, wherein the content of LiPO4 is 70 mol% and the content of P2O5 is 30 mol%; the thickness is 2.5 μm.

[0059] The material of the counter electrode layer 6 is nickel oxide (NiO) with a thickness of 300 nm.

[0060] The second conductive layer 7 is a transparent ITO conductive layer with a thickness of 120 nm.

[0061] The ion-buffered flexible all-solid-state electrochromic device was prepared using the following method:

[0062] (1) A first conductive layer is deposited on a first flexible substrate by magnetron sputtering, and a second conductive layer, a counter electrode layer, a solid electrolyte layer, and an electrochromic layer are sequentially deposited on a second flexible substrate by magnetron sputtering; wherein, the transparent ITO conductive layer uses an ITO target, the working gas is argon, and the sputtering power density is 3W / cm². 2 The NiO electrode layer uses a nickel target, and the working gases are oxygen and argon, with a sputtering power density of 2.5 W / cm². 2 The solid electrolyte layer uses a LiPO4-P2O5 ceramic target, the working gas is argon, and the sputtering power density is 2 W / cm². 2 The electrochromic layer uses a tungsten target, and the working gases are oxygen and argon, with a sputtering power density of 1.5 W / cm². 2 ;

[0063] (2) After plasma activation of the electrochromic layer surface, an insulating separator strip is formed by coating the electrochromic layer in a grid structure.

[0064] (3) Dissolve lithium salt lithium nitrate and triethyl phosphate in solvent ethanol to form a precursor solution. Then, drop the precursor solution onto the partition formed by the insulating separator strip, let it stand to allow the solution to flow level, pre-dry at 60°C to remove the solvent, and then perform heat treatment at 120°C.

[0065] (4) The first and second flexible substrates after deposition are pressed together by a laminator and the edges are sealed to obtain the ion-buffered flexible all-solid-state electrochromic device.

[0066] Example 2

[0067] This embodiment provides an ion-buffered flexible all-solid-state electrochromic device, which includes a first flexible substrate, a first conductive layer, a partitioned ion-buffered layer, an electrochromic layer, a solid electrolyte layer, a counter electrode layer, a second conductive layer, and a second flexible substrate stacked sequentially.

[0068] Both the first and second flexible substrates are flexible PET layers with a thickness of 30μm.

[0069] The first conductive layer is a transparent ITO conductive layer with a thickness of 100nm.

[0070] The partitioned ion buffer layer comprises rectangular ion buffer units separated by insulating separators. The ion buffer units are made of Li3PO4, and the insulating separators are made of polyimide. Each ion buffer unit has a side length of 6 mm, and each insulating separator has a width of 100 nm. The partitioned ion buffer layer has a thickness of 2 μm.

[0071] The electrochromic layer is made of tungsten trioxide (WO3) and has a thickness of 300 nm.

[0072] The solid electrolyte layer is made of LiPO4-P2O5 composite electrolyte, wherein the content of LiPO4 is 80 mol% and the content of P2O5 is 20 mol%; the thickness is 2 μm.

[0073] The material of the counter electrode layer is nickel oxide (NiO), and the thickness is 400 nm.

[0074] The second conductive layer is a transparent ITO conductive layer with a thickness of 150 nm.

[0075] The fabrication method of the ion-buffered flexible all-solid-state electrochromic device is the same as that in Example 1.

[0076] Example 3

[0077] This embodiment provides an ion-buffered flexible all-solid-state electrochromic device, which includes a first flexible substrate, a first conductive layer, a partitioned ion-buffered layer, an electrochromic layer, a solid electrolyte layer, a counter electrode layer, a second conductive layer, and a second flexible substrate stacked sequentially.

[0078] Both the first and second flexible substrates are flexible PET layers with a thickness of 20μm.

[0079] The first conductive layer is a transparent ITO conductive layer with a thickness of 150nm.

[0080] The partitioned ion buffer layer comprises rectangular ion buffer units separated by insulating spacers. The ion buffer units are made of Li3PO4, and the insulating spacers are made of polyimide. Each ion buffer unit has a side length of 4 mm, and each insulating spacer has a width of 200 nm. The partitioned ion buffer layer has a thickness of 1 μm.

[0081] The electrochromic layer is made of tungsten trioxide (WO3) and has a thickness of 500 nm.

[0082] The solid electrolyte layer is made of LiPO4-P2O5 composite electrolyte, wherein the content of LiPO4 is 60 mol% and the content of P2O5 is 40 mol%; the thickness is 3 μm.

[0083] The material of the counter electrode layer is nickel oxide (NiO), and the thickness is 200 nm.

[0084] The second conductive layer is a transparent ITO conductive layer with a thickness of 100 nm.

[0085] The fabrication method of the ion-buffered flexible all-solid-state electrochromic device is the same as that in Example 1.

[0086] Example 4

[0087] This embodiment provides an ion-buffered flexible all-solid-state electrochromic device. Compared with Embodiment 1, the material of the mesh-type ion-buffered unit is replaced with Li2SO3, and the rest is the same as Embodiment 1.

[0088] The preparation method of the ion-buffered flexible all-solid-state electrochromic device is the same as that in Example 1, except that triethyl phosphate is replaced with triethyl phosphite and lithium salt is replaced with lithium sulfate.

[0089] Example 5

[0090] This embodiment provides an ion-buffered flexible all-solid-state electrochromic device. Compared with embodiment 1, the shape of the mesh-type ion-buffered unit is set to a regular hexagon with equal side length, and the rest is the same as embodiment 1.

[0091] The fabrication method of the ion-buffered flexible all-solid-state electrochromic device is the same as that in Example 1.

[0092] Example 6

[0093] This embodiment provides an ion-buffered flexible all-solid-state electrochromic device. Compared with Embodiment 1, the material of the solid electrolyte layer is replaced with Li3PO4, and the rest is the same as Embodiment 1.

[0094] Comparative Example 1

[0095] This comparative example provides a flexible all-solid-state electrochromic device. Compared with Example 1, it does not have a partitioned ion buffer layer, but all other aspects are the same as Example 1.

[0096] Comparative Example 2

[0097] This comparative example provides a flexible all-solid-state electrochromic device. Compared with Example 1, the partitioned ion buffer layer is not partitioned, that is, no insulating separator is provided, forming an integral Li3PO4 ion buffer layer. All other aspects are the same as in Example 1.

[0098] Performance testing

[0099] The flexible all-solid-state electrochromic devices provided in the embodiments and comparative examples were subjected to bending dimming performance tests. Specifically, this included: testing the transmittance adjustment range before and after bending, calculating the dimming amplitude attenuation rate; and testing the dimming difference value before and after bending. Specifically, multiple dispersed measurement points were selected on the device, and dimming tests were performed synchronously at each measurement point. The transmittance of each measurement point was measured, and the average value was calculated. The standard deviation of the transmittance at each measurement point was then calculated, which is the dimming difference value. The device was bent using a bending tester with a bending radius of 3 cm and 1500 bending cycles.

[0100] Table 1

[0101]

[0102] As can be seen from the test results in Table 1, the ion-buffered flexible all-solid-state electrochromic device of the present invention maintains a dimming amplitude attenuation rate below 5.8% and a dimming difference value below 3.1% after multiple bending. This demonstrates that the device of the present invention, through the partitioned design of the ion buffer layer, can replenish lithium ions during the bending process, improving lithium ion transport and thus effectively enhancing the device's bending resistance and dimming stability after bending. In contrast, in Comparative Examples 1 and 2, without the ion buffer layer and partitioning, the dimming amplitude attenuation rate and dimming difference value significantly increase after bending, resulting in a significant deterioration in the dimming stability of the device after bending.

[0103] Furthermore, the devices in Examples 1-5 exhibit superior dimming performance. Specifically, compared to Example 1, the dimming performance is further improved in Example 5 when the partition structure is set to hexagonal. Comparing the results of Example 1 and Example 6, the composite electrolyte material shows better compatibility with the ion buffer layer compared to a single phosphate electrolyte, thus enhancing the device's dimming performance.

[0104] In summary, the flexible electrochromic device provided by this invention utilizes a partitioned ion buffer layer to provide ion release and storage, supplementing the lithium-ion supply to compensate for the ion transport obstruction caused by the bending process of the device, improving the electrochromic performance of the all-solid-state electrochromic device under bending conditions, effectively reducing the attenuation rate of the dimming amplitude under bending, and improving the dimming uniformity.

[0105] The above description is only a specific embodiment of the present invention, but the protection scope of the present invention is not limited thereto. Those skilled in the art should understand that any changes or substitutions that can be easily conceived by those skilled in the art within the technical scope disclosed in the present invention fall within the protection and disclosure scope of the present invention.

Claims

1. An ion-buffered flexible all-solid-state electrochromic device, characterized in that, The ion-buffered flexible all-solid-state electrochromic device comprises, in sequence, a first flexible substrate, a first conductive layer, a partitioned ion-buffered layer, an electrochromic layer, a solid electrolyte layer, a counter electrode layer, a second conductive layer, and a second flexible substrate; the partitioned ion-buffered layer comprises a mesh-type ion-buffered unit.

2. The ion-buffered flexible all-solid-state electrochromic device according to claim 1, characterized in that, The material of the mesh-type ion buffer unit includes Li3PO4 and / or Li2SO3; Preferably, the mesh-type ion buffer unit is rectangular and / or hexagonal in shape; Preferably, the side length of the mesh-type ion buffer unit is 4-6 mm; Preferably, the grid-type ion buffer unit is formed by insulating separators; Preferably, the width of the insulating separator is 100-200 nm; Preferably, the insulating separator is made of polyimide; Preferably, the thickness of the partitioned ion buffer layer is 1-2 μm.

3. The ion-buffered flexible all-solid-state electrochromic device according to claim 1 or 2, characterized in that, The thickness of the electrochromic layer is 300-500 nm; Preferably, the material of the electrochromic layer includes tungsten trioxide.

4. The ion-buffered flexible all-solid-state electrochromic device according to any one of claims 1-3, characterized in that, The thickness of the solid electrolyte layer is 2-3 μm; Preferably, the material of the solid electrolyte layer includes a LiPO4-P2O5 composite electrolyte; Preferably, in the LiPO4-P2O5 composite electrolyte, the content of LiPO4 is 60-80 mol% and the content of P2O5 is 20-40 mol%.

5. The ion-buffered flexible all-solid-state electrochromic device according to any one of claims 1-4, characterized in that, The thickness of the ion-buffered flexible all-solid-state electrochromic device is 50-100 μm.

6. The ion-buffered flexible all-solid-state electrochromic device according to any one of claims 1-5, characterized in that, The thickness of the counter electrode layer is 200-400 nm; Preferably, the material of the counter electrode layer includes nickel oxide; Preferably, the thickness of the first conductive layer is 100-150 nm; Preferably, the material of the first conductive layer includes indium tin oxide; Preferably, the thickness of the second conductive layer is 100-150 nm; Preferably, the material of the second conductive layer includes indium tin oxide.

7. The ion-buffered flexible all-solid-state electrochromic device according to any one of claims 1-6, characterized in that, The material of the first flexible base layer includes polyethylene terephthalate; Preferably, the material of the second flexible base layer includes polyethylene terephthalate.

8. A method for fabricating an ion-buffered flexible all-solid-state electrochromic device as described in any one of claims 1-7, characterized in that, The preparation method includes the following steps: A first conductive layer is deposited on a first flexible substrate using magnetron sputtering. A second conductive layer, a counter electrode layer, a solid electrolyte layer, and an electrochromic layer are then sequentially deposited on a second flexible substrate. A partitioned ion buffer layer is prepared on the electrochromic layer. The first and second flexible substrates are then aligned, pressed together, and encapsulated to obtain the ion buffer type flexible all-solid-state electrochromic device.

9. The preparation method according to claim 8, characterized in that, The method for preparing the partitioned ion buffer layer includes: forming insulating separators by coating a material according to a mesh structure; mixing lithium salt, organic precursor and solvent to form a precursor solution; filling the precursor solution into the partitions formed by the insulating separators; and performing pre-drying and curing heat treatment in sequence. Preferably, the organic precursor comprises phosphate esters and / or phosphites; Preferably, the phosphate ester compound includes triethyl phosphate and / or trimethyl phosphate; Preferably, the phosphite compound includes triethyl phosphite and / or trimethyl phosphite; Preferably, the pre-drying temperature is 50-70°C; Preferably, the curing heat treatment temperature is 120-150℃.

10. The preparation method according to claim 8 or 9, characterized in that, The preparation method further includes: before preparing the partitioned ion buffer layer, performing plasma treatment on the surface of the first conductive layer and / or the electrochromic layer.

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