Lifting adjustment type ion beam etching uniformity correction structure

Abstract

The invention discloses a lifting adjustment type ion beam etching uniformity correction structure, and relates to the technical field of semiconductors, the lifting adjustment type ion beam etching uniformity correction structure comprises a reaction cavity, a first motor is fixedly installed on the back surface of the reaction cavity, the output end of the first motor penetrates and extends into the reaction cavity, and the output end of the first motor is fixedly connected with a carrying table; a rotating seat mechanism and a lifting clamping mechanism are mounted in the carrying table, a feeding port is formed in one side of the carrying table, an ion source is arranged on one side of the reaction cavity, and the output end of the ion source faces the carrying table; and the correction mechanism comprises a ball screw, a guide rod and a second motor, and the bottom end of the ball screw is rotationally connected with the inner bottom surface of the reaction cavity through a bearing. Accurate lifting of the correction plate can be achieved through driving of the second motor, the correction plate is used for shielding the ion beam to compensate the etching rate difference of the far end and the near end, and different etching angle requirements can be met; and the detachable design of the correction plate is convenient to replace and adapts to ion sources and carrying tables of different specifications.

Description

Technical Field

[0001] This invention relates to the field of semiconductor technology, and in particular to a height-adjustable ion beam etching uniformity correction structure. Background Technology

[0002] In the semiconductor manufacturing field, ion beam etching technology, with its advantages of high etching precision and strong directionality, has become one of the key technologies in the fabrication of micro and nanostructures and is widely used in the manufacturing process of various semiconductor devices. The core working principle of ion beam etching equipment is to selectively remove materials by emitting a high-energy ion beam from an ion source to bombard the wafer surface. The etching uniformity directly determines the performance consistency and yield of semiconductor devices.

[0003] In existing ion beam etching equipment, a circular ion source and a stage that can rotate around the X-axis are typically configured, and the angle between the stage and the ion source can be adjusted around the Y-axis to achieve different ion beam etching angles. However, in etching scenarios with large incident angles, the distance from the near end (A) and far end (B) of the wafer etching region to the ion source differs significantly, resulting in a higher bombardment intensity of the ion beam at the near end than at the far end. This leads to a large etching rate difference, severely damaging etching uniformity and failing to meet the processing requirements of high-precision semiconductor devices.

[0004] To improve etching uniformity, existing technologies largely rely on complex ion source optimization or stage motion parameter adjustments, lacking a specific adaptive correction structure to address the near-far etching rate difference. Even those devices attempting to intervene in ion beam distribution through simple components suffer from structural design flaws: either the execution end shape is fixed, making flexible replacement impossible; or installation and disassembly are inconvenient, hindering adaptation to different ion source and stage specifications; or the motion mode is limited, failing to accurately compensate for rate differences at different etching angles. Furthermore, existing correction structures generally suffer from unstable connection guidance and cumbersome drive control, making convenient and efficient etching uniformity correction difficult. Therefore, there is an urgent need for an ion beam etching correction mechanism that is simple in structure, easy to install, and flexible in motion to solve the near-far etching rate difference problem at large etching angles. Summary of the Invention

[0005] This invention discloses a height-adjustable ion beam etching uniformity correction structure. By incorporating a correction mechanism, a first slide can be raised and lowered via a ball screw driven by a second motor. The second slide, guided by a guide rod, allows for precise adjustment of the correction plate height. The correction plate blocks the ion beam, achieving near-field etching rate compensation and adapting to uniformity correction requirements at different etching angles. Furthermore, the correction plate is detachably connected via a slot and locking knob, facilitating easy replacement and adapting to different ion sources and stages. In summary, this invention solves the problems in the prior art.

[0006] To solve the above-mentioned technical problems, the present invention is achieved through the following technical solution:

[0007] The present invention discloses a lifting and adjustable ion beam etching uniformity correction structure, comprising a reaction chamber, a first motor fixedly mounted on the back of the reaction chamber, the output end of the first motor extending through into the interior of the reaction chamber, and a stage fixedly connected to the output end of the first motor. A rotating seat mechanism and a lifting clamping mechanism are installed inside the stage. A feed port is provided on one side of the stage, and an ion source is provided on one side of the reaction chamber, with the output end of the ion source facing the stage.

[0008] The correction mechanism includes a ball screw, a guide rod, and a second motor. The bottom end of the ball screw is rotatably connected to the inner bottom surface of the reaction chamber via a bearing. The two ends of the guide rod are fixedly connected to the inner bottom and top surfaces of the reaction chamber, respectively. The ball screw and the guide rod are symmetrically distributed on the front and rear sides of the ion source. The second motor is fixedly installed on the top of the reaction chamber, and the output end of the second motor passes through the reaction chamber and is connected to the shaft end of the ball screw. A first slide is screwed onto the outside of the ball screw, and a second slide is slidably sleeved onto the outside of the guide rod. A correction plate is detachably installed between the first slide and the second slide.

[0009] Furthermore, each of the first and second slides has a slot on the opposite side, in which a correction plate is movably mounted. The correction plate has two limiting grooves inside. Each of the first and second slides has a locking knob screwed onto the side away from the ion source, and the locking knob matches and engages with the limiting groove.

[0010] Furthermore, limiting blocks are fixedly connected to both the front and rear sides of the correction plate, and the bottoms of the two limiting blocks are respectively attached to the tops of the first slide and the second slide.

[0011] Furthermore, the size of the correction plate is larger than the output port size of the ion source, and the correction plate is made of graphite material.

[0012] Furthermore, the rotating base mechanism includes a third motor and a rotating platform. The third motor is installed inside the platform, and the bottom of the rotating platform is connected to the output end of the third motor.

[0013] Furthermore, the lifting clamping mechanism includes a lifting cylinder and an annular pressure plate. There are two lifting cylinders, which are fixedly installed inside the platform and symmetrically distributed on the outside of the rotating platform. The bottom of the annular pressure plate is fixedly connected to the telescopic ends of the two lifting cylinders, and the annular pressure plate is located above the rotating platform.

[0014] The present invention has the following advantages over the prior art:

[0015] (1) This technical solution is equipped with a correction mechanism, which allows the first slide to be raised and lowered by the ball screw driven by the second motor. With the second slide guided by the guide rod, the height of the correction plate can be precisely adjusted. The correction plate can block the ion beam to achieve near and far end etching rate compensation, which can meet the uniformity correction requirements under different etching angles. The correction plate can be detached and connected by the slot and the locking knob, making it easy to replace and adaptable to different specifications of ion sources and stages.

[0016] (2) This technical solution is equipped with a rotating seat mechanism and a lifting clamping mechanism, which allows the rotating table to rotate by a third motor. Combined with the angle adjustment of the stage around the Y axis, the wafer can be etched in multiple directions. The lifting cylinder drives the ring pressure plate to lift and lower, which can firmly clamp the wafer and avoid wafer displacement during the etching process, thus ensuring etching accuracy. At the same time, the overall structure is connected and guided stably, and the drive control is simple, which improves the convenience and efficiency of etching uniformity correction. Attached Figure Description

[0017] To more clearly illustrate the technical solutions of the embodiments of the present invention, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0018] Figure 1 This is a schematic diagram of the overall three-dimensional structure of the present invention;

[0019] Figure 2 This is a schematic diagram of the platform mounting structure of the present invention;

[0020] Figure 3 This is a schematic diagram of the internal cross-sectional structure of the platform of the present invention;

[0021] Figure 4 This is a schematic diagram of the exploded structure of the correction plate installation of the present invention;

[0022] Figure 5 This is a schematic diagram of the working state of the stage and correction plate of the present invention.

[0023] Figure 6 This is a schematic diagram of the cross-sectional plane structure of the annular pressure plate of the present invention.

[0024] In the diagram: 1. Reaction chamber; 2. First motor; 3. Stage; 4. Ion source; 5. Ball screw; 6. Guide rod; 7. Second motor; 8. First slide; 9. Second slide; 10. Correction plate; 11. Slot; 12. Limiting slot; 13. Locking knob; 14. Limiting block; 15. Third motor; 16. Rotary table; 17. Lifting cylinder; 18. Annular pressure plate. Detailed Implementation

[0025] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0026] In the description of this invention, it should be understood that the terms "surface", "side", "gap", "peripheral", etc., which indicate orientation or positional relationship, are only for the convenience of describing this invention and simplifying the description, and do not indicate or imply that the components or elements referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as limiting this invention.

[0027] Reference Figures 1-6 A lifting and adjustable ion beam etching uniformity correction structure includes a reaction chamber 1. A first motor 2 is fixedly installed on the back of the reaction chamber 1. The output end of the first motor 2 extends through into the interior of the reaction chamber 1, and the output end of the first motor 2 is fixedly connected to a stage 3. A rotating seat mechanism and a lifting clamping mechanism are installed inside the stage 3. A feed port is provided on one side of the stage 3, and an ion source 4 is provided on one side of the reaction chamber 1. The output end of the ion source 4 faces the stage 3.

[0028] The correction mechanism includes a ball screw 5, a guide rod 6, and a second motor 7. The bottom end of the ball screw 5 is rotatably connected to the inner bottom surface of the reaction chamber 1 via a bearing. The two ends of the guide rod 6 are fixedly connected to the inner bottom surface and the top surface of the reaction chamber 1, respectively. The ball screw 5 and the guide rod 6 are symmetrically distributed on the front and rear sides of the ion source 4. The second motor 7 is fixedly installed on the top of the reaction chamber 1, and the output end of the second motor 7 passes through the reaction chamber 1 and is connected to the shaft end of the ball screw 5. A first slide 8 is screwed to the outside of the ball screw 5, and a second slide 9 is slidably sleeved to the outside of the guide rod 6. A correction plate 10 is detachably installed between the first slide 8 and the second slide 9.

[0029] Each of the first slide block 8 and the second slide block 9 has a slot 11 on its opposite side. A correction plate 10 is movably mounted in the slot 11. The correction plate 10 has two limiting grooves 12 inside. A locking knob 13 is screwed onto the side of the first slide block 8 and the second slide block 9 away from the ion source 4. The locking knob 13 matches and engages with the limiting groove 12. Limiting blocks 14 are fixedly connected to the front and rear sides of the correction plate 10. The bottom of the two limiting blocks 14 is respectively attached to the top of the first slide block 8 and the second slide block 9. The size of the correction plate 10 is larger than the output port size of the ion source 4, and the correction plate 10 is made of graphite material.

[0030] The rotating seat mechanism includes a third motor 15 and a rotating platform 16. The third motor 15 is installed inside the platform 3, and the bottom of the rotating platform 16 is connected to the output end of the third motor 15. The lifting and clamping mechanism includes a lifting cylinder 17 and an annular pressure plate 18. There are two lifting cylinders 17, which are fixedly installed inside the platform 3 and symmetrically distributed on the outside of the rotating platform 16. The bottom of the annular pressure plate 18 is fixedly connected to the telescopic ends of the two lifting cylinders 17, and the annular pressure plate 18 is located above the rotating platform 16.

[0031] It should be noted that the annular pressure plate 18 consists of a fixed part and a rotating part (e.g., Figure 6 As shown, the fixed part is connected to the telescopic end of the lifting cylinder 17, and the rotating part is rotatably connected to the fixed part, ensuring that when the rotating part presses and fixes the wafer, the third motor 13 can drive the rotary table 14 and the wafer to rotate and adjust.

[0032] In the specific implementation process, the wafer is placed on the rotary table 16 of the stage 3 through the feed port. Then, two lifting cylinders 17 are started simultaneously, driving the annular pressure plate 18 to move downward until the annular pressure plate 18 fits against the edge of the wafer to complete clamping and fixing. The third motor 15 is started, driving the rotary table 16 and the wafer to rotate. At the same time, the first motor 2 drives the stage 3 to adjust around the Y-axis to the preset etching angle. According to the near-far end rate difference requirement corresponding to the etching angle (analyzed and adjusted by the image captured by the spectrometer), the second motor 7 is started. The second motor 7 drives the ball screw 5 to rotate. The first slide 8, which is screwed to the ball screw 5, moves up and down along the axis of the ball screw 5. At the same time, the second slide 9 slides synchronously along the guide rod 6, thereby driving the correction plate 10 to move up and down precisely to the target height. The correction plate 10 partially blocks the ion beam emitted by the ion source 4, weakening the ion bombardment intensity at the near end of the wafer and achieving balanced compensation of the near-far end etching rate.

[0033] When it is necessary to adapt to ion sources 4 of different specifications or adjust the etching compensation accuracy, loosen the locking knob 13 on the first slide 8 and the second slide 9 so that the locking knob 13 is disengaged from the limiting groove 12 of the correction plate 10, and the correction plate 10 can be removed from the slot 11 for replacement. After replacement, tighten the locking knob 13 in the opposite direction so that the locking knob 13 is re-engaged into the limiting groove 12, thus completing the fixation of the correction plate 10.

[0034] The correction plate 10 can be detached and installed by the cooperation of the slot 11 and the locking knob 13. Different sizes or shapes of correction plates 10 can be quickly replaced according to the specifications of the ion source 4 and the etching process requirements, thereby improving the structural adaptability.

[0035] Among them, the limiting blocks 14 on the front and rear sides of the correction plate 10 are in contact with the top of the first slide block 8 and the second slide block 9, which can axially limit the installation position of the correction plate 10, facilitate the installation and positioning of the correction plate 10, and avoid the installation offset of the correction plate 10 from affecting the ion beam shielding accuracy.

[0036] Among them, the size of the correction plate 10 is larger than the size of the output port of the ion source 4, which can ensure the effective shielding range of the ion beam and ensure the comprehensiveness of the near-far end rate compensation. The graphite material has good high temperature resistance and ion bombardment resistance, which can extend the service life of the correction plate 10.

[0037] Among them, the third motor 15 drives the rotary table 16 to rotate, and in conjunction with the angle adjustment of the stage 3 around the Y axis, the wafer can receive ion beam bombardment evenly in all areas, further improving the etching uniformity.

[0038] Among them, two symmetrically distributed lifting cylinders 17 drive the annular pressure plate 18 to lift and lower, which can achieve stable clamping of the wafer and avoid uneven clamping force caused by a single cylinder drive. At the same time, the annular pressure plate 18 clamps the wafer edge, which can avoid blocking the wafer etching area and ensure the integrity of etching.

[0039] Among them, the ball screw 5 has high transmission precision, and together with the guiding action of the guide rod 6, it can achieve precise control of the lifting and lowering of the correction plate 10, ensuring precise matching between the ion beam blocking amount and the etching rate difference.

[0040] The first slide block 8 and the second slide block 9 move synchronously, which can ensure that the correction plate 10 remains horizontal during the lifting and lowering process, and avoid uneven ion beam blocking caused by the tilting of the correction plate 10.

[0041] The preferred embodiments of the present invention disclosed above are merely illustrative of the invention. These preferred embodiments do not exhaustively describe all details, nor do they limit the invention to the specific implementations described. Clearly, many modifications and variations can be made based on the content of this specification. This specification selects and specifically describes these embodiments to better explain the principles and practical applications of the invention, thereby enabling those skilled in the art to better understand and utilize the invention. The invention is limited only by the claims and their full scope and equivalents.

Claims

1. A height-adjustable ion beam etching uniformity correction structure, characterized in that, The reaction chamber (1) is included. A first motor (2) is fixedly installed on the back of the reaction chamber (1). The output end of the first motor (2) extends through into the interior of the reaction chamber (1). The output end of the first motor (2) is fixedly connected to a platform (3). A rotating seat mechanism and a lifting clamping mechanism are installed inside the platform (3). A feed port is provided on one side of the platform (3). An ion source (4) is provided on one side of the reaction chamber (1). The output end of the ion source (4) faces the platform (3). The correction mechanism includes a ball screw (5), a guide rod (6), and a second motor (7). The bottom end of the ball screw (5) is rotatably connected to the inner bottom surface of the reaction chamber (1) through a bearing. The two ends of the guide rod (6) are fixedly connected to the inner bottom surface and the top surface of the reaction chamber (1), respectively. The ball screw (5) and the guide rod (6) are symmetrically distributed on the front and rear sides of the ion source (4). The second motor (7) is fixedly installed on the top of the reaction chamber (1). The output end of the second motor (7) passes through the reaction chamber (1) and is connected to the shaft end of the ball screw (5). The ball screw (5) is screwed to the outside of a first slide (8). The guide rod (6) is slidably sleeved to a second slide (9). A correction plate (10) is detachably installed between the first slide (8) and the second slide (9).

2. The adjustable ion beam etching uniformity correction structure according to claim 1, characterized in that, The first slide (8) and the second slide (9) are provided with a slot (11) on the opposite side. A correction plate (10) is movably installed in the slot (11). The correction plate (10) has two limiting grooves (12) inside. The first slide (8) and the second slide (9) are both provided with a locking knob (13) on the side away from the ion source (4). The locking knob (13) matches and engages with the limiting groove (12).

3. The adjustable ion beam etching uniformity correction structure according to claim 1, characterized in that, Limiting blocks (14) are fixedly connected to both the front and rear sides of the correction plate (10), and the bottoms of the two limiting blocks (14) are respectively attached to the tops of the first slide (8) and the second slide (9).

4. The adjustable ion beam etching uniformity correction structure according to claim 1, characterized in that, The size of the correction plate (10) is larger than the output port size of the ion source (4), and the correction plate (10) is made of graphite material.

5. The adjustable ion beam etching uniformity correction structure according to claim 1, characterized in that, The rotating seat mechanism includes a third motor (15) and a rotating platform (16). The third motor (15) is installed inside the platform (3), and the bottom of the rotating platform (16) is connected to the output end of the third motor (15).

6. The adjustable ion beam etching uniformity correction structure according to claim 1, characterized in that, The lifting clamping mechanism includes a lifting cylinder (17) and an annular pressure plate (18). There are two lifting cylinders (17). The two lifting cylinders (17) are fixedly installed inside the platform (3) and symmetrically distributed on the outside of the rotating platform (16). The bottom of the annular pressure plate (18) is fixedly connected to the telescopic ends of the two lifting cylinders (17). The annular pressure plate (18) is located above the rotating platform (16).

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