Light emitting diode and light emitting device

Abstract

The invention provides a light emitting diode and a light emitting device. The light-emitting diode comprises a first light-emitting unit, a second light-emitting unit and a third light-emitting unit which are sequentially connected in series, the first light-emitting unit is electrically connected with a first electrode, and the third light-emitting unit is electrically connected with a second electrode; the first light-emitting unit and the third light-emitting unit are arranged around the second light-emitting unit, the light-emitting surface of the second light-emitting unit is circular, and the light-emitting surface of the first light-emitting unit and the light-emitting surface of the third light-emitting unit are both semicircular. And the light-emitting surface of the first light-emitting unit and the light-emitting surface of the third light-emitting unit are spliced to form a circular ring which is concentric with the light-emitting surface of the second light-emitting unit. The current density of the light-emitting diode is effectively improved; the circular light-emitting area is beneficial for gathering light to the center, the axial light-emitting intensity is improved, and the directivity and the brightness uniformity of the light source are improved.

Description

Technical Field

[0001] This invention relates to the field of semiconductor device technology, and in particular to a light-emitting diode and a light-emitting device. Background Technology

[0002] In the fields of semiconductor lighting and high-power optoelectronic applications, horizontal high-voltage vertical structure LED chips have become key components for meeting the demands of high-voltage and high-power applications due to their ability to optimize current paths and increase power density. Their core advantage lies in the fact that current flows vertically within the chip, effectively reducing current transmission losses compared to traditional horizontally conductive LED chips, thus adapting to higher power scenarios.

[0003] Currently, conventional high-voltage vertical LED chips are mostly limited to a layout of two strings connected in parallel or series. However, this traditional structure has significant technical shortcomings: on the one hand, the effect of two strings connected in parallel or series in series on current density is limited, making it difficult to further break through the power limit in high-voltage, high-power applications, and failing to fully meet the performance requirements of high-brightness, high-power devices; on the other hand, the traditional structure lacks optimized design for the light emission direction, resulting in a dispersed light emission area and weak axial light intensity (i.e., light emitted along the vertical axis of the chip). This leads to low light energy utilization in applications requiring directional high-brightness light emission (such as directional lighting and projection light sources), hindering its widespread application in high-end optoelectronic fields. Summary of the Invention

[0004] In view of the defects and shortcomings of existing light-emitting diodes, this application provides a light-emitting diode and a light-emitting device to improve current density and enhance axial light intensity.

[0005] One embodiment of this application provides a light-emitting diode, including a first light-emitting unit, a second light-emitting unit, and a third light-emitting unit connected in series. The first light-emitting unit and the third light-emitting unit are arranged around the second light-emitting unit. The first light-emitting unit is electrically connected to a first electrode, and the third light-emitting unit is electrically connected to the second electrode. The second light-emitting unit has a circular light-emitting surface, the first light-emitting unit and the third light-emitting unit form a semi-circular ring, and the first light-emitting unit and the third light-emitting unit are joined together to form a ring concentric with the light-emitting surface of the second light-emitting unit.

[0006] According to another embodiment of this application, a light-emitting device is provided, including a circuit board and a plurality of light-emitting elements disposed on the circuit board, wherein the light-emitting elements include the light-emitting diodes described in this application.

[0007] As described above, the light-emitting diode and light-emitting device of this application have the following beneficial effects: The light-emitting surface of the LED in this application adopts an overall circular design and is divided into three regions. The three regions are electrically connected in series internally, which effectively improves the current density of the LED. The central region is designed as a circular light-emitting area, which helps the light to focus towards the center, improves the axial light intensity, and improves the directionality and brightness uniformity of the light source. Attached Figure Description

[0008] Figure 1 The diagram shown is a top view of the light-emitting diode provided in Embodiment 1.

[0009] Figure 2 Displayed as Figure 1 A schematic diagram of the cross-sectional structure along the AA direction.

[0010] Figures 3 to 14 The diagram shown is a cross-sectional view of the fabrication process of the light-emitting diode provided in Embodiment 2 of this application.

[0011] Figure 15 The diagram shown is a schematic diagram of the light-emitting device provided in Embodiment 3 of this application.

[0012] Component designation explanation 10, Circuit board; 20, Light-emitting element; 100, Semiconductor stack; 101, First light-emitting unit; 102, Second light-emitting unit; 103, Third light-emitting unit; 110, First semiconductor layer; 120, Active layer; 130, Second semiconductor layer; 140, Groove; 200, First electrode; 300, Second electrode; 400, First conductive layer; 410, Transparent conductive layer; 420, First reflective layer; 430, Current spreading layer; 500, Second conductive layer; 510, Second reflective layer; 520, Bridging layer; 600, Insulating layer; 610, First insulating layer; 611, First via; 620, Second insulating layer; 621, Second via; 622, Third via; 630, Third insulating layer; 700, Bonding layer; 800, Substrate; 900, Back gold layer. Detailed Implementation

[0013] The following specific examples illustrate the implementation of the present invention. Those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific embodiments, and various details in this specification can also be modified or changed based on different viewpoints and applications without departing from the spirit of the present invention.

[0014] Existing high-voltage vertical LED chips typically employ simple parallel or series-parallel structures. While these structures optimize the current path to some extent, they still suffer from poor current distribution uniformity, limited power density improvement per unit area, and suboptimal light output efficiency due to structural layout. This performance bottleneck becomes increasingly apparent, especially in applications requiring higher voltage, higher power, and higher brightness. Therefore, an innovative internal structure design for LEDs is urgently needed to further optimize current spread, improve power density, and enhance light output efficiency.

[0015] Based on the background technology and the above-mentioned technical defects, this application provides a light-emitting diode, including a first light-emitting unit, a second light-emitting unit and a third light-emitting unit connected in series, wherein the first light-emitting unit and the third light-emitting unit are arranged around the second light-emitting unit, the first light-emitting unit is electrically connected to a first electrode, and the third light-emitting unit is electrically connected to the second electrode; The second light-emitting unit has a circular light-emitting surface, the first light-emitting unit and the third light-emitting unit form a semi-circular ring, and the light-emitting surfaces of the first light-emitting unit and the third light-emitting unit are joined together to form a ring with the same center as the light-emitting surface of the second light-emitting unit.

[0016] The light-emitting diode provided in this embodiment adopts a three-unit series structure of "central circle and concentric ring". The concentric circle symmetrical path eliminates current congestion and improves high current driving performance. The light is concentrated and emitted from the center and axis, forming a bright and uniform circular light spot, which significantly improves the axial light intensity. The symmetrical structure avoids local hot spots and the heat distribution is uniform, which improves the reliability and life of the light-emitting diode. The smooth arc edge reduces electric field and stress concentration, reduces the risk of breakdown, and makes the structure more stable.

[0017] In some embodiments, the area ratio of the luminous surface of the first light-emitting unit to the luminous surface of the third light-emitting unit is 1:1; the area ratio of the luminous surface of the second light-emitting unit to the area of ​​the luminous surface of the first light-emitting unit or the luminous surface of the third light-emitting unit is between 0.7 and 1.3.

[0018] The LED provided in this embodiment ensures that the current density of each light-emitting unit in the series circuit is uniform, avoiding local overload and improving the efficiency and reliability of the LED; at the same time, it can promote symmetrical and uniform heat distribution, effectively suppressing thermal stress and performance degradation caused by uneven heat; the light intensity of each light-emitting unit is matched, and they are fused to form a regular light spot with uniform brightness and no dark areas, improving the light output quality and axial light intensity.

[0019] In some embodiments, there is a first gap between the light-emitting surface of the first light-emitting unit and the light-emitting surface of the second light-emitting unit, a second gap between the light-emitting surface of the second light-emitting unit and the light-emitting surface of the third light-emitting unit, and a third gap between the light-emitting surface of the first light-emitting unit and the light-emitting surface of the third light-emitting unit.

[0020] In this embodiment, by setting a first gap, a second gap, and a third gap, the series units are electrically isolated from each other, avoiding PN junction short circuits caused by material diffusion or process deviations, and ensuring the normal operation of the high-voltage series structure. In addition, the gaps provide a buffer area for thermal expansion, which can alleviate thermal stress concentration and increase the heat dissipation area, which helps to reduce the operating temperature of the LED and improve long-term reliability.

[0021] In some embodiments, the first gap is between 10 μm and 40 μm; The second gap is between 10 μm and 40 μm; The third gap is between 10μm and 40μm.

[0022] In this embodiment, by defining the gaps between the light-emitting diodes, current leakage or electric field breakdown between light-emitting units at different potentials can be effectively prevented. This provides the necessary safety isolation margin for the high-voltage series structure, which can offset the effects of lateral doping or defects that may exist in the semiconductor manufacturing process, thereby improving the long-term reliability and stability of the light-emitting diode under high voltage. Simultaneously, defining these gaps is crucial for achieving high-quality optical output. Too small a gap will lead to severe optical crosstalk and reduced contrast, while too large a gap will unnecessarily increase the size of the light-emitting diode, reducing the yield per unit wafer. By defining appropriate gaps, the light from adjacent light-emitting areas can be effectively isolated, improving the overall spot purity and uniformity, maximizing the high integration of the light-emitting diode, and optimizing cost-effectiveness.

[0023] In some embodiments, the first light-emitting unit, the second light-emitting unit, and the third light-emitting unit are electrically insulated from each other by an insulating layer; and the first light-emitting unit, the second light-emitting unit, and the third light-emitting unit are all provided with a conductive layer to form a series connection; The conductive layer of the first light-emitting unit and the first electrode are electrically connected to each other through the insulating layer; The conductive layer of the second light-emitting unit and the conductive layer of the first light-emitting unit are electrically connected to each other through the insulating layer; The conductive layer of the third light-emitting unit and the conductive layer of the second light-emitting unit are electrically connected to each other through the insulating layer; The conductive layer of the second electrode and the third light-emitting unit are electrically connected to each other through the insulating layer.

[0024] In this embodiment, the LED achieves electrical insulation by placing an insulating layer between each light-emitting unit and connecting them in series using a conductive layer that penetrates the insulating layer. This ensures that the current flows uniformly and sequentially through each light-emitting unit, avoiding short circuits and current imbalances, thus improving the LED's operating efficiency and electrical reliability. Simultaneously, this integrated series design results in a more uniform heat source distribution, reducing localized heat accumulation, effectively lowering the risk of thermal stress, and extending the LED's service life.

[0025] In some embodiments, the conductive layer includes a first conductive layer and a second conductive layer stacked sequentially from top to bottom; The first conductive layer of the first light-emitting unit is electrically connected to the first electrode; The second conductive layer of the first light-emitting unit is electrically connected to the first conductive layer of the second light-emitting unit; The second conductive layer of the second light-emitting unit is electrically connected to the first conductive layer of the third light-emitting unit; The second conductive layer of the third light-emitting unit is electrically connected to the second electrode.

[0026] The conductive layer of the light-emitting diode in this embodiment includes a first conductive layer and a second conductive layer. By setting the electrical connection relationship between the conductive layers of each light-emitting unit, a compact and clear current channel is formed, ensuring that the current is uniformly and efficiently conducted sequentially between each light-emitting unit, reducing resistance loss and local overload caused by lateral current expansion, and improving the overall electrical efficiency and working stability of the light-emitting diode. The regularity of the current path promotes the uniform distribution of heat, effectively avoids the formation of hot spots, and reduces the risk of thermal stress damage.

[0027] In some embodiments, the first conductive layer includes a transparent conductive layer, a first reflective layer, and a current spreading layer disposed sequentially from top to bottom; The second conductive layer includes a second reflective layer and a bridging layer arranged sequentially from top to bottom; The current spreading layer of the first light-emitting unit is electrically connected to the first electrode; The bridging layer of the first light-emitting unit is electrically connected to the current spreading layer of the second light-emitting unit; The bridging layer of the second light-emitting unit is electrically connected to the current spreading layer of the third light-emitting unit; The bridging layer of the third light-emitting unit is electrically connected to the second electrode through the current spreading layer disposed below the second electrode.

[0028] In this embodiment, the light-emitting diode (LED) utilizes a current spreading layer, allowing current to diffuse laterally and uniformly throughout the active area of ​​the light-emitting unit, effectively eliminating local current congestion and improving luminous efficiency and lifespan. The synergistic design of the first and second reflective layers forms a highly efficient optical reflection cavity, which can efficiently reflect downward-emitted light to the light-emitting surface, greatly reducing light energy loss and improving the axial light intensity and overall light output efficiency of the LED. By setting a bridging layer, low-resistance, high-reliability ohmic contacts and electrical interconnections between different light-emitting units are achieved, avoiding traditional wire bonding, simplifying the structure, and improving the stability and resistance to mechanical and thermal stress of the series structure.

[0029] In some embodiments, the first light-emitting unit, the second light-emitting unit, and the third light-emitting unit each include a semiconductor stack. The semiconductor stack includes a first semiconductor layer, an active layer, and a second semiconductor layer disposed sequentially from top to bottom. At least one groove is disposed in the semiconductor stack, and the groove penetrates the second semiconductor layer, the active layer, and at least a portion of the first semiconductor layer. The transparent conductive layer is disposed below a portion of the second semiconductor layer; The insulating layer includes a first insulating layer, which is disposed below the transparent conductive layer and extends to cover the sidewall of the groove. The first insulating layer located below the transparent conductive layer is provided with a plurality of first through holes. The first reflective layer is disposed below the first insulating layer located below the transparent conductive layer, and the first reflective layer is disposed within the first through hole, so that the first reflective layer is electrically connected to the second semiconductor layer through the transparent conductive layer; The current spreading layer is disposed below the first reflective layer, and the current spreading layer of the first light-emitting unit extends to cover the area below the first electrode.

[0030] In this embodiment, the light-emitting diode (LED) achieves physical isolation between light-emitting units and between the P / N poles within each unit by forming a groove. The first via, filled with the first reflective layer, ensures good electrical insulation while enabling efficient and localized vertical injection of current from the reflective layer to the second semiconductor layer, ensuring the accuracy and reliability of the series circuit connection. The first reflective layer, positioned below the transparent conductive layer and filling the first via, forms a highly efficient distributed reflector that can efficiently reflect downward and side-emitted light to the light-emitting surface, greatly reducing light absorption loss within the chip and improving the brightness and light extraction efficiency of the LED. The stacked design of the current spreading layer and the first reflective layer synergistically performs the functions of lateral current spreading and vertical injection, ensuring that the current is evenly spread from the connection point to the entire light-emitting area, effectively eliminating current congestion, improving light emission uniformity and the power handling capacity of the LED, and the current spreading layer can effectively protect the reflective layer from corrosion and oxidation, improving reliability.

[0031] In some embodiments, the insulating layer further includes a second insulating layer; The second insulating layer is disposed between the current spreading layer and the second reflective layer, and extends to cover the first insulating layer in the groove and the current spreading layer below the second electrode; The first conductive layers of the first light-emitting unit, the second light-emitting unit, and the third light-emitting unit are electrically insulated from each other by the first insulating layer and the second insulating layer; the current spreading layer of the third light-emitting unit is electrically insulated from the current spreading layer below the second electrode by the second insulating layer.

[0032] In this embodiment, the light-emitting diode (LED) incorporates a second insulating layer, which forms an additional insulating barrier between the current spreading layer and the second reflective layer, as well as in the critical electrode region. This eliminates the risk of lateral short circuits or current leakage between the first and second conductive layers, ensuring the safety and stability of the high-voltage series structure during long-term operation. The stacked design of the first and second insulating layers increases the dielectric strength between the light-emitting units and between the electrodes, enabling the LED to withstand higher reverse bias and overvoltage transients, thus enhancing its high-voltage reliability. The second insulating layer extends to cover the sidewalls of the recess and the steep step area below the electrodes, forming a continuous, gapless passivation layer that effectively protects the semiconductor and metal layers from external environmental corrosion (such as moisture and ion contamination), improving the long-term environmental reliability of the LED.

[0033] In some embodiments, a second reflective layer is disposed below a portion of the second insulating layer; a second reflective layer is disposed on the second insulating layer within the groove and on the bottom wall of the groove, for electrical connection with the first semiconductor layer; A portion of the second insulating layer of the second light-emitting unit and a portion of the second insulating layer of the third light-emitting unit are provided with a second through hole, and at least one third through hole is provided in the second insulating layer below the second electrode; The bridging layer is provided below the second reflective layer, inside the second through hole, and inside the third through hole; The insulating layer further includes a third insulating layer, which is disposed below the bridging layer. The bridging layers of the first light-emitting unit, the second light-emitting unit, and the third light-emitting unit are electrically insulated from each other through the third insulating layer.

[0034] In this embodiment, the light-emitting diode has a second reflective layer disposed within the groove and on the second insulating layer, and forms an electrical connection with the first semiconductor layer, realizing the dual functions of vertical current injection and efficient downward light reflection, thereby improving current utilization and light extraction efficiency. By setting the second and third through holes, the bridging layer can penetrate the insulating layer to achieve low-resistance, ohmic contact interconnection between different light-emitting units, forming a highly integrated vertical current path, reducing series resistance and thermal resistance, and optimizing high-voltage driving performance. By setting the third insulating layer, the bridging layers of each wind and solar unit are electrically insulated from each other, completely eliminating the risk of short circuit between metal interconnect layers. The synergistic effect of multiple insulating media improves the high-voltage withstand capability and surge resistance of the light-emitting diode.

[0035] In some embodiments, a bonding layer, a substrate, and a back gold layer are disposed sequentially from top to bottom below the third insulating layer.

[0036] In this embodiment, the bonding layer of the light-emitting diode firmly and permanently bonds the semiconductor stack to the substrate; the substrate provides a robust mechanical carrier for the entire light-emitting diode, enhancing its mechanical strength and rigidity, improving manufacturing yield and product reliability; the back gold layer provides excellent lateral heat diffusion capability, which helps to evenly distribute heat to the entire substrate area and improve heat dissipation efficiency.

[0037] Another embodiment of this application provides a light-emitting device, including a circuit board and a plurality of light-emitting elements disposed on the circuit board, wherein the light-emitting elements include the light-emitting diodes provided in this application.

[0038] The light-emitting device includes the aforementioned light-emitting diode, and therefore also improves the current density of the light-emitting diode and enhances the axial luminous intensity of the light-emitting diode.

[0039] The following will describe the specific embodiments in detail.

[0040] Example 1 This embodiment provides a light-emitting diode, such as Figure 1As shown, the light-emitting diode includes a first light-emitting unit 101, a second light-emitting unit 102, and a third light-emitting unit 103 connected in series. The first light-emitting unit 101 is electrically connected to the first electrode 200, and the third light-emitting unit 103 is electrically connected to the second electrode 300.

[0041] The first light-emitting unit 101 and the third light-emitting unit 103 are arranged around the second light-emitting unit 102. The light-emitting surface of the second light-emitting unit 102 is circular, and the light-emitting surfaces of the first light-emitting unit 101 and the third light-emitting unit 103 are both semi-circular. After the light-emitting surfaces of the first light-emitting unit 101 and the third light-emitting unit 103 are spliced ​​together, they form a ring with the same center as the light-emitting surface of the second light-emitting unit 102.

[0042] In this embodiment, the first electrode 200 is a P electrode and the second electrode 300 is an N electrode. In this case, the metal film layers of the first electrode 200 and the second electrode 300 can be the same and can be fabricated using the same vapor deposition process. The material of the metal film layer can be at least one of the following metal materials: Ti, Pt, Ni, Au, and Sn.

[0043] According to the isoperimetric theorem, among all closed curves with the same perimeter, a circle has the largest area. Therefore, this embodiment designs the light-emitting area as a circular light-emitting area, which is beneficial to increasing the area of ​​the light-emitting area. A structure of three light-emitting units connected in series with a central circle and concentric rings is adopted. The symmetrical path of the concentric circles eliminates current congestion and improves high-current driving performance; the light is concentrated and emitted from the center and along the axis, forming a bright and uniform circular light spot, significantly improving the axial light intensity; the symmetrical structure avoids local hot spots, resulting in uniform heat distribution and improving the reliability and lifespan of the light-emitting diode; the smooth arc edges reduce electric field and stress concentration, lowering the risk of breakdown and making the structure more stable.

[0044] In an optional embodiment, the area of ​​the light-emitting surface of the first light-emitting unit 101 is the first light-emitting area, the area of ​​the light-emitting surface of the second light-emitting unit 102 is the second light-emitting area, and the area of ​​the light-emitting surface of the third light-emitting unit 103 is the third light-emitting area. The ratio of the first light-emitting area to the third light-emitting area is 1:1; the ratio of the second light-emitting area to the first or third light-emitting area is between 0.7 and 1.3. This ensures the uniformity of the current density of each light-emitting unit in the series circuit, avoids local overload, and improves efficiency and reliability; it also ensures symmetrical and uniform heat distribution, preventing thermal stress and performance degradation caused by uneven heat distribution; and simultaneously forms a perfectly circular light spot with uniform brightness and no dark areas, improving light output quality and axial light intensity. Optionally, the ratio of the second luminous area to the first or third luminous area is close to 1:1. This area ratio design allows the series-connected luminous units to operate under similar current densities and voltages, ensuring balanced electrical load, improving overall luminous efficiency and long-term operational reliability. Electrical uniformity promotes more consistent heat distribution, reducing the risk of local overheating. The luminous intensity of each luminous unit is matched under similar operating conditions, effectively forming a uniform and regular light spot, optimizing light output quality.

[0045] In optional embodiments, such as Figure 2 As shown, there is a first gap L1 between the light-emitting surface of the first light-emitting unit 101 and the light-emitting surface of the second light-emitting unit 102, a second gap L2 between the light-emitting surface of the second light-emitting unit 102 and the light-emitting surface of the third light-emitting unit 103, and a third gap L3 between the light-emitting surface of the first light-emitting unit 101 and the light-emitting surface of the third light-emitting unit 103. By setting gaps between the light-emitting surfaces of the first light-emitting unit 101, the second light-emitting unit 102, and the third light-emitting unit 103, electrical isolation between each series unit can be ensured, avoiding PN junction short circuits caused by material diffusion or process deviations, ensuring the normal operation of the high-voltage series structure. Furthermore, the gaps between them provide a buffer area for thermal expansion, alleviating thermal stress concentration, increasing the heat dissipation area, helping to reduce the operating temperature of the light-emitting diode, and improving the long-term reliability of the light-emitting diode.

[0046] In an optional embodiment, L1 is between 10μm and 40μm; L2 is between 10μm and 40μm; and L3 is between 10μm and 40μm. Specifically, L1 can be, for example, 10μm, 15μm, 20μm, 25μm, 30μm, 35μm, or 40μm; L2 can be, for example, 10μm, 15μm, 20μm, 25μm, 30μm, 35μm, or 40μm; and L3 can be, for example, 10μm, 15μm, 20μm, 25μm, 30μm, 35μm, or 40μm. Limiting the gaps mentioned above is crucial for achieving high-quality optical output. Gaps that are too small can lead to severe optical crosstalk, reduced contrast, and make manufacturing difficult. Excessive gaps would unnecessarily increase the size of the LED, reducing the yield per wafer. Appropriate gaps ensure effective isolation of light from adjacent LED units, improve overall light spot purity and uniformity, and maximize the high integration density of the LED. Simultaneously, suitable gaps effectively prevent leakage of light current or electric field breakdown between LED units at different potentials, providing necessary safety isolation margins for high-voltage series structures. This can offset the effects of lateral doping or defects that may exist in the semiconductor manufacturing process, improving the long-term reliability and stability of the LED under high voltage. L1, L2, and L3 can be equal or unequal; this embodiment does not impose specific limitations.

[0047] In optional embodiments, such as Figure 2 As shown, the first light-emitting unit 101, the second light-emitting unit 102, and the third light-emitting unit 103 are electrically insulated from each other by an insulating layer 600. The insulating layer 600 is made of an insulating material, such as SiO2, SiN, or SiO2. x N y The light-emitting diode (LED) is selected from at least one of the following: TiO2, Si3N4, Al2O3, TiN, AlN, ZrO2, TiAlN, TiSiN, HfO2, TaO2, or MgF2. The insulating layer 600 effectively prevents current leakage or short circuits between the three series-connected light-emitting units, ensuring the safety and stability of the high-voltage series structure under normal operating voltage and overvoltage transients. Simultaneously, the insulating layer 600 isolates light-emitting units at different potentials, preventing performance degradation due to electrochemical migration or material diffusion, and ensuring the lifespan and reliability of the LED under long-term high-voltage and high-temperature operating environments.

[0048] In an optional embodiment, the first light-emitting unit 101, the second light-emitting unit 102, and the third light-emitting unit 103 are all provided with conductive layers to form a series connection. A through-hole is provided on a portion of the insulating layer 600. The conductive layer of the first light-emitting unit 101 and the first electrode 200 are electrically connected to each other through the through-hole of the insulating layer 600; the conductive layer of the second light-emitting unit 102 and the conductive layer of the first light-emitting unit 101 are electrically connected to each other through the through-hole of the insulating layer 600; the conductive layer of the third light-emitting unit 103 and the conductive layer of the second light-emitting unit 102 are electrically connected to each other through the through-hole of the insulating layer 600; and the conductive layer of the second electrode 300 and the conductive layer of the third light-emitting unit 103 are electrically connected to each other through the through-hole of the insulating layer 600. By setting through holes in the insulating layer 600, the light-emitting units can be connected in series, ensuring that the current passes through each light-emitting unit uniformly and sequentially, avoiding short circuits and current imbalance, and improving the working efficiency and electrical reliability of the light-emitting diode. This integrated series design makes the heat source distribution more uniform, reduces local heat accumulation, effectively reduces the risk of thermal stress, and extends the service life of the light-emitting diode.

[0049] In optional embodiments, such as Figure 2 As shown, the conductive layer includes a first conductive layer 400 and a second conductive layer 500 stacked sequentially from top to bottom. Specifically, the first light-emitting unit 101, the second light-emitting unit 102, and the third light-emitting unit 103 each include a first conductive layer 400 and a second conductive layer 500 stacked sequentially, with the second conductive layer 500 located below the first conductive layer 400. The first conductive layer 400 of the first light-emitting unit 101 is electrically connected to the first electrode 200; the second conductive layer 500 of the first light-emitting unit 101 is electrically connected to the first conductive layer 400 of the second light-emitting unit 102; the second conductive layer 500 of the second light-emitting unit 102 is electrically connected to the first conductive layer 400 of the third light-emitting unit 103; and the second conductive layer 500 of the third light-emitting unit 103 is electrically connected to the second electrode 300. By connecting the three light-emitting units in series within a single light-emitting diode, external wire bonding is eliminated, greatly simplifying the packaging process and improving the reliability and production efficiency of the light-emitting diode. In this embodiment, the current of the light-emitting diode passes vertically through each light-emitting unit from top to bottom or bottom to top. The current path is short and uniform, which effectively reduces series resistance and current congestion, and improves current expansion capability and photoelectric conversion efficiency. At the same time, the series connection method in this embodiment makes the operating voltage of a single light-emitting diode the sum of the voltages of the three light-emitting units, realizing high voltage and low current driving characteristics, reducing interconnection loss and Joule heat, and is suitable for direct high voltage driving scenarios.

[0050] In optional embodiments, such as Figure 2As shown, the first light-emitting unit 101, the second light-emitting unit 102, and the third light-emitting unit 103 all include a semiconductor stack 100, which is disposed above the first conductive layer 400. The semiconductor stack 100 includes a first semiconductor layer 110, an active layer 120, and a second semiconductor layer 130 stacked sequentially from top to bottom. The first semiconductor layer 110 and the second semiconductor layer 130 have opposite polarities. In this embodiment, the first semiconductor layer 110 is an N-type semiconductor layer, and the second semiconductor layer 130 is a P-type semiconductor layer. In this case, the first semiconductor layer 110 provides electrons by doping with an N-type dopant, such as Si, Ge, Sn, Se, or Te. The second semiconductor layer 130 provides holes by doping with a P-type dopant, such as Mg, Zn, Ca, Sr, or Ba. A rough structure (not shown in the figure) can be formed on the upper surface of the first semiconductor layer 110. This rough structure can improve the external quantum efficiency, which is beneficial for improving the light emission effect of the light-emitting diode. The active layer 120 is the main region for light emission in the LED, providing radiation for electron-hole recombination. The active layer 120 can be a single quantum well structure or a multiple quantum well (MQW) structure. A MQW structure consists of alternating quantum well layers and quantum barrier layers, forming a periodic multilayer structure. The quantum barrier layer has a larger band gap than the quantum well layers. The quantum well layers and quantum barrier layers can be, for example, GaN layers, AlGaN layers, or AlGaInP layers. To improve the luminous efficiency of the active layer 120, the depth of the quantum wells, the number of paired quantum well and quantum barrier layers, the thickness, and / or other characteristics can be modified within the active layer 120.

[0051] The first conductive layer 400 and the second conductive layer 500 of the first light-emitting unit 101 are electrically connected through their semiconductor stack 100; the first conductive layer 400 and the second conductive layer 500 of the second light-emitting unit 102 are electrically connected through their semiconductor stack 100; the first conductive layer 400 and the second conductive layer 500 of the third light-emitting unit 103 are electrically connected through their semiconductor stack 100.

[0052] In optional embodiments, such as Figure 2 As shown, each light-emitting unit has at least one groove 140 in its semiconductor stack 100, and the groove 140 penetrates the second semiconductor layer 130, the active layer 120, and at least part of the first semiconductor layer 110.

[0053] The first conductive layer includes a transparent conductive layer 410, a first reflective layer 420, and a current spreading layer 430 stacked sequentially from top to bottom.

[0054] A transparent conductive layer 410 is disposed below the second semiconductor layer 130 and in ohmic contact with the second semiconductor layer 130. The transparent conductive layer 410 can uniformly diffuse current, reduce local overheating, and improve light emission uniformity. The material of the transparent conductive layer 410 is selected from transparent conductive materials, such as indium tin oxide (ITO), indium zinc oxide (IZO), indium zinc tin oxide (IZTO), indium aluminum zinc oxide (IAZO), indium gallium zinc oxide (IGZO), indium gallium tin oxide (IGTO), aluminum zinc oxide (AZO), antimony tin oxide (ATO), gallium zinc oxide (GZO), and IrO. x RuO x RuO x / TO, Ni / IrOx / Au, Ni / IrO x At least one of / Au / ITO.

[0055] The first reflective layer 420 is located below the transparent conductive layer 410 and reflects light radiated from the semiconductor stack 100 toward the downward side, causing the light to return to the semiconductor stack 100 and radiate outward from the light-emitting side, thereby improving the light emission effect of the light-emitting diode. The first reflective layer 420 is formed of at least one high-reflectivity metal selected from Ag, Al, and Au.

[0056] The current spreading layer 430 is disposed below the first reflective layer 420 and wraps around the side of the first reflective layer 420. It serves to prevent the metal of the first reflective layer 420 from diffusing to other layers of the current spreading layer 430 on the side away from the first reflective layer 420, thus affecting the reflection effect. The material of the current spreading layer 430 can be, for example, passivating metal materials such as Pt, Au, TiW, Cr, and Ti.

[0057] The second conductive layer 500 includes a second reflective layer 510 and a bridging layer 520 arranged sequentially from top to bottom.

[0058] The material of the second reflective layer 510 is selected from a metallic material with high reflectivity and good ohmic contact, such as at least one metallic material selected from Ag, Al, Cu, and Au.

[0059] The bridging layer 520 is located below the second reflective layer 510 and is used to electrically connect different light-emitting units in series. The material of the bridging layer 520 is selected from at least one metal selected from Ti, Pt, Au, Cr, and Ni.

[0060] The current spreading layer 430 of the first light-emitting unit 101 is electrically connected to the first electrode 200; the bridging layer 520 of the first light-emitting unit 101 is electrically connected to the current spreading layer 430 of the second light-emitting unit 102; the bridging layer 520 of the second light-emitting unit 102 is electrically connected to the current spreading layer 430 of the third light-emitting unit 103; the bridging layer 520 of the third light-emitting unit 103 is electrically connected to the second electrode 300 through the current spreading layer 430 disposed below the second electrode 300. In this embodiment, the light-emitting diode realizes the series connection between each light-emitting unit and the electrical connection between the light-emitting unit and the electrode through the first conductive layer 400 and the second conductive layer 500.

[0061] In optional embodiments, such as Figure 2 As shown, the insulating layer 600 includes a first insulating layer 610, which is disposed on the lower surface of the transparent conductive layer 410, the lower surface of the second semiconductor layer 130 (where the transparent conductive layer 410 is not disposed), and the sidewall of the groove 140. At least one first through-hole 611 is provided within the first insulating layer 610 located below the transparent conductive layer 410, extending through the transparent conductive layer 410. The first insulating layer 610 can block current from flowing directly vertically downwards, forcing the current to flow uniformly downwards through the first through-hole 611, thus preventing ineffective light emission in the area below the semiconductor stack 100.

[0062] A first reflective layer 420 is disposed below the first insulating layer 610 located below the transparent conductive layer 410. The first reflective layer 420 fills the first through hole 611 so that the first reflective layer 420 is electrically connected to the second semiconductor layer 130 through the transparent conductive layer 410. The first reflective layer 420 and the first insulating layer 610 form an ODR structure, which can efficiently reflect downward and side-emitted light to the light-emitting surface, greatly reducing the absorption loss of light energy inside the light-emitting diode and improving the brightness and light extraction rate of the light-emitting diode.

[0063] A current spreading layer 430 is disposed on the lower surface of the first reflective layer 420 and covers the sides of the first reflective layer 420. The stacked design of the current spreading layer 430 and the first reflective layer 420 works synergistically to perform the functions of lateral current spreading and vertical injection, ensuring that the current is evenly spread from the connection point to the entire light-emitting area, effectively eliminating current congestion, improving light emission uniformity and the power handling capability of the light-emitting diode. The current spreading layer 430 located in the first light-emitting unit 101 extends to cover the outside of the semiconductor stack 100 of the first light-emitting unit 101. Part of the current spreading layer 430 located on the outside of the semiconductor stack 100 of the first light-emitting unit 101 is exposed, and a first electrode 200 is formed on the exposed part. The current spreading layer 430 located below the first electrode 200 and the current spreading layer 430 located below the semiconductor stack 100 of the first light-emitting unit 101 are continuous. The semiconductor stack 100 of the third light-emitting unit 102 is also provided with a current spreading layer 430 on the outside, and part of it is exposed. A second electrode 300 is formed on the exposed part, but the current spreading layer 430 located below the second electrode 300 is discontinuous with the current spreading layer 430 located below the semiconductor stack 100 of the third light-emitting unit 102.

[0064] In optional embodiments, such as Figure 2 As shown, the insulating layer 600 also includes a second insulating layer 620, which is disposed between the first conductive layer 400 and the second conductive layer 500. This second insulating layer 620 can prevent the risk of lateral short circuit or current leakage between the first conductive layer 400 and the second conductive layer 500, and ensure the safety and stability of the high voltage series structure under long-term operation.

[0065] Specifically, the second insulating layer 620 is disposed between the current spreading layer 430 and the second reflective layer 510, and extends to cover the first insulating layer 610 within the groove 140.

[0066] A first insulating layer 610 and a second insulating layer 620 are disposed between the first conductive layers 400 of adjacent light-emitting units to achieve electrical insulation between each light-emitting unit. The current spreading layer 430 of the third light-emitting unit 103 is electrically insulated from the current spreading layer 430 below the second electrode 300 through the second insulating layer 620.

[0067] A second through-hole 621 is provided in a portion of the second insulating layer 620 of the second light-emitting unit 102 and a portion of the second insulating layer 620 of the third light-emitting unit 103, and the second through-hole 621 extends to the current spreading layer 430. At least one third through-hole 622 is provided in the second insulating layer 620 below the second electrode 300, and the third through-hole 622 extends to the current spreading layer 430.

[0068] A second reflective layer 510 is disposed below a portion of the second insulating layer 620. Specifically, except for the edge of the second insulating layer 620 near the second through hole 621 and the area below the second insulating layer 620 below the second electrode 300, the second reflective layer 510 is disposed on the lower surface of the remaining areas of the second insulating layer 620. Simultaneously, a second reflective layer 510 is disposed on the second insulating layer 620 within the groove 140 and on the bottom wall of the groove 140 for electrical connection with the first semiconductor layer 110.

[0069] A bridging layer 520 is provided on the lower surface of the second reflective layer 510. Bridging layers 520 are also provided within the second through-hole 621 and the third through-hole 622 to achieve electrical connection between the bridging layer 520 and the current spreading layer 430. Simultaneously, this prevents the current spreading layer 430 from contacting the second reflective layer 510 in adjacent light-emitting areas, thereby avoiding metal eutectic phenomena such as AuAg and AuAl eutectic.

[0070] In optional embodiments, such as Figure 2 As shown, the insulating layer 600 also includes a third insulating layer 630, which is located below the bridging layer 520. Simultaneously, the third insulating layer 630 is disposed between the bridging layers 520 of the first light-emitting unit 101, the second light-emitting unit 102, and the third light-emitting unit 103, respectively, to electrically insulate the light-emitting units and form a series structure through the aforementioned conductive layer.

[0071] In optional embodiments, such as Figure 2 As shown, the lower surface of the third insulating layer 630 is provided with a bonding layer 700, a substrate 800 and a back gold layer 900 from top to bottom.

[0072] The bonding layer 700 is used to bond the semiconductor stack 100 of the light-emitting diode to the substrate 800. The material of the bonding layer 700 is a metallic material, such as at least one of Au, Sn, AuSn, and NiSn.

[0073] The substrate 800 serves to provide mechanical support for the structure located above it, and also has a heat dissipation function. In this embodiment, the substrate 800 is an insulating substrate, which is non-conductive, and its material can be, for example, an AlN substrate.

[0074] A back gold layer 900 is disposed on the lower surface of the substrate 800 and serves to provide mechanical support, enhance heat dissipation, shield electromagnetic interference, and provide a ground plane. The material of the back gold layer 900 can be at least one of Ti, Pt, Ni, Au, and AuSn.

[0075] In optional embodiments, such as Figure 2As shown, the surface of the first semiconductor layer 110 in the light-emitting surface of the first light-emitting unit 101, the light-emitting surface of the second light-emitting unit 102, and the light-emitting surface of the third light-emitting unit 103 forms a rough surface away from the active layer 120 to improve the light extraction efficiency of the light-emitting surface.

[0076] A passivation layer (not shown in the figure) is formed on the light-emitting surface of the first light-emitting unit 101, the light-emitting surface of the second light-emitting unit 102, and the light-emitting surface of the third light-emitting unit 103, as well as on the surface of the first insulating layer 610 outside the area where the first electrode 200 is located on the outside of the first light-emitting unit 101, and on the surface of the first insulating layer 610 outside the area where the second electrode 300 is located on the outside of the third light-emitting unit 103.

[0077] Example 2 This embodiment provides a method for fabricating a light-emitting diode, such as... Figures 3 to 14 As shown, the preparation method of this embodiment includes the following steps:

[0078] The growth substrate 1000 is a growth substrate 1000 for growing semiconductor stack 100, and can be a sapphire substrate, silicon nitride substrate, silicon substrate, gallium nitride substrate or aluminum nitride substrate, etc.

[0079] S2, such as Figure 3 As shown, a first semiconductor layer 110, an active layer 120, and a second semiconductor layer 130 are sequentially grown on a growth substrate 1000 to form a semiconductor stack 100. The first semiconductor layer 110 and the second semiconductor layer 120 have opposite polarities. In this embodiment, the first semiconductor layer 110 is an N-type semiconductor layer, the active layer 120 is a multi-quantum-well layer, and the second semiconductor layer 130 is a P-type semiconductor layer.

[0080] The semiconductor stack 100 includes a first light-emitting region A, a second light-emitting region B, and a third light-emitting region C, with the first light-emitting region A and the third light-emitting region C surrounding the second light-emitting region B. Along the vertical direction, the projections of the first light-emitting region A, the second light-emitting region B, and the third light-emitting region C onto the growth substrate 1000 show that the second light-emitting region B is circular, and the first light-emitting region A and the third light-emitting region C are semi-circular. The first light-emitting region A, the second light-emitting region B, and the third light-emitting region C are all three-dimensional spatial regions extending vertically within the semiconductor stack 100.

[0081] S3. A first conductive layer 400 is formed on one side of the second semiconductor layer 130 of the semiconductor stack 100, a second conductive layer 500 is formed on the side of the first conductive layer 400 away from the second semiconductor layer 130, and an insulating layer 600 is formed between the second semiconductor layer 130 and the first conductive layer 400, between the first conductive layer 400 and the second conductive layer 500, and on the side of the second conductive layer 500 away from the second semiconductor layer 130.

[0082] In an optional embodiment, step S3 specifically includes the following steps: S31, such as Figure 4 As shown, grooves 140 are etched in the first light-emitting region A, the second light-emitting region B, and the third light-emitting region C of the semiconductor stack 100. The grooves 140 penetrate the second semiconductor layer 130, the active layer 120, and at least a portion of the first semiconductor layer 110.

[0083] S32, such as Figure 5 As shown, a transparent conductive layer 410 is formed on the second semiconductor layer 130 surrounding the groove 140. The transparent conductive layer 410 is formed in the first light-emitting region A, the second light-emitting region B, and the third light-emitting region C.

[0084] S33, such as Figure 6 As shown, a first insulating layer 610 is formed on the sidewall of the groove 140, above the transparent conductive layer 410, and above the second semiconductor layer 130; the portion of the first insulating layer 610 in the first light-emitting region A, the second light-emitting region B, and the third light-emitting region C, excluding the groove 140, is etched to expose the transparent conductive layer 410; at least one first through-hole 611 is formed in each of the first light-emitting region A, the second light-emitting region B, and the third light-emitting region C.

[0085] S34, such as Figure 7 As shown, a first reflective layer 420 is formed on the first insulating layer 610 surrounding the groove 140 in the first light-emitting area A, the second light-emitting area B and the third light-emitting area C. The first reflective layer 420 simultaneously fills the first through hole 611 and is connected to the transparent conductive layer 410.

[0086] S35, such as Figure 8 As shown, a current spreading layer 430 is formed on the first reflective layer 420. The current spreading layer 430 located in the first light-emitting region A extends to cover the first insulating layer 610 on its outer side, and a current spreading layer 430 is formed on the first insulating layer 610 on the outer side of the third light-emitting region C. The current spreading layer 430 located on the outer side of the first light-emitting region A and the current spreading layer 430 within the first light-emitting region A are continuous structures; the current spreading layer 430 located on the outer side of the third light-emitting region C and the current spreading layer 430 within the third light-emitting region C are discontinuous structures.

[0087] The transparent conductive layer 410, the first reflective layer 420, and the current spreading layer 430 form the first conductive layer 400.

[0088] S36, such as Figure 9As shown, the second insulating layer 620 is formed on the first insulating layer 610 on the sidewall of the groove 140, above the current spreading layer 430, and above the first insulating layer 610 between adjacent current spreading layers 430.

[0089] The second insulating layer 620 located above the current spreading layer 430 in the second light-emitting region B and the third light-emitting region C is etched to expose the current spreading layer 430, forming at least one second via 621; the second insulating layer 620 located outside the third light-emitting region C and above the current spreading layer 430 is etched to expose the current spreading layer 430, forming at least one third via 622.

[0090] S37, such as Figure 10 As shown, the second reflective layer 510 is formed on the second insulating layer 620 on the sidewall of the groove 140 and at the bottom of the groove 140, realizing the electrical connection between the second reflective layer 510 and the first semiconductor layer 110; the second reflective layer 510 is also formed above a portion of the second insulating layer 620, but not above the second insulating layer 620 near the second through hole 621.

[0091] S38, such as Figure 11 As shown, the bridging layer 520 is formed above the second reflective layer 510, and fills the second through hole 621 and the third through hole 622. However, the bridging layers 520 in the first light-emitting region A, the second light-emitting region B and the third light-emitting region C are not continuous with the bridging layers 520 in their adjacent light-emitting regions, that is, they have gaps, and the gaps are formed above the second insulating layer 620.

[0092] The second reflective layer 510 and the bridging layer 520 form the second conductive layer 500.

[0093] S39, such as Figure 12 As shown, the third insulating layer 630 is formed above the bridging layer 520 and also within the gap, i.e., above the second insulating layer 620.

[0094] The first insulating layer 610, the second insulating layer 620 and the third insulating layer 630 form the insulating layer 600.

[0095] S4, such as Figure 13 As shown, a substrate 800 is provided, and the substrate 800 is bonded to the side of the insulating layer 600 away from the second conductive layer 500.

[0096] In an optional embodiment, one side surface of the substrate 800 is bonded to the third insulating layer 630 of the insulating layer 600 through a bonding layer 700, and a back gold layer 900 is formed on the side surface of the substrate 800 opposite to the third insulating layer 630.

[0097] S5, such as Figure 14As shown, the growth substrate 1000 is removed to expose the first semiconductor layer 110.

[0098] The etching of the semiconductor stack 100 begins from the first semiconductor layer 110 and stops at the first insulating layer 610. The etched area is the area outside the regions where the first light-emitting region A, the second light-emitting region B, and the third light-emitting region C are located. The unetched semiconductor stack 100 located in the first light-emitting region A forms the light-emitting surface of the first light-emitting unit 101. The unetched semiconductor stack 100 located in the second light-emitting region B forms the light-emitting surface of the second light-emitting unit 102. The unetched semiconductor stack 100 located in the third light-emitting region C forms the light-emitting surface of the third light-emitting unit 103.

[0099] In an optional embodiment, the surface of the first semiconductor layer 110 in the first light-emitting region A, the second light-emitting region B, and the third light-emitting region C, away from the active layer 120, is roughened.

[0100] S6, such as Figure 2 As shown, a portion of the first insulating layer 610 located outside the first light-emitting region A is etched to expose the current spreading layer 430, and a first electrode 200 is formed above the exposed current spreading layer 430; a portion of the first insulating layer 610 located outside the third light-emitting region B is etched to expose the current spreading layer 430, and a second electrode 300 is formed above the exposed current spreading layer 430.

[0101] A passivation layer (not shown in the figure) is formed on the surface and sidewall of the first light-emitting unit 101, the second light-emitting unit 102, and the third light-emitting unit 103, on the surface of the first insulating layer 610 outside the first light-emitting unit 101 except for the area where the first electrode 200 is located, and on the surface of the first insulating layer 610 outside the third light-emitting unit 103 except for the area where the second electrode 300 is located.

[0102] Example 3 This embodiment provides a light-emitting device, such as... Figure 15 As shown, the device includes a circuit board 10 and multiple light-emitting elements 20 disposed on the circuit board 10. The light-emitting elements 20 include light-emitting diodes (LEDs) provided in Embodiment 1 or Embodiment 2. The light-emitting surface of the LED in Embodiment 1 or Embodiment 2 adopts an overall circular design and is divided into three light-emitting regions. These three light-emitting regions are electrically connected in series internally, effectively increasing the current density of the LED. The central region is designed as a circular light-emitting area, which helps the light to focus towards the center, increasing the axial luminous intensity and improving the directivity and brightness uniformity of the light source. By using the LEDs provided in Embodiment 1 or Embodiment 2, the light-emitting unit 20 of this embodiment helps to improve the current density and axial luminous intensity of the light-emitting device, and improves the directivity and brightness uniformity of the light-emitting device.

[0103] The above embodiments are merely illustrative of the principles and effects of the present invention and are not intended to limit the invention. Any person skilled in the art can modify or alter the above embodiments without departing from the spirit and scope of the present invention. Therefore, all equivalent modifications or alterations made by those skilled in the art without departing from the spirit and technical concept disclosed in the present invention should still be covered by the claims of the present invention.

Claims

1. A light-emitting diode, characterized in that, It includes a first light-emitting unit, a second light-emitting unit, and a third light-emitting unit connected in series. The first light-emitting unit and the third light-emitting unit are arranged around the second light-emitting unit. The first light-emitting unit is electrically connected to a first electrode, and the third light-emitting unit is electrically connected to the second electrode. The second light-emitting unit has a circular light-emitting surface, the first light-emitting unit and the third light-emitting unit form a semi-circular ring, and the light-emitting surfaces of the first light-emitting unit and the third light-emitting unit are joined together to form a ring with the same center as the light-emitting surface of the second light-emitting unit.

2. The light-emitting diode according to claim 1, characterized in that, The area ratio of the luminous surface of the first luminous unit to the luminous surface of the third luminous unit is 1:1; the area ratio of the luminous surface of the second luminous unit to the luminous surface of the first luminous unit or the third luminous unit is between 0.7 and 1.

3.

3. The light-emitting diode according to claim 1 or 2, characterized in that, There is a first gap between the light-emitting surface of the first light-emitting unit and the light-emitting surface of the second light-emitting unit, a second gap between the light-emitting surface of the second light-emitting unit and the light-emitting surface of the third light-emitting unit, and a third gap between the light-emitting surface of the first light-emitting unit and the light-emitting surface of the third light-emitting unit.

4. The light-emitting diode according to claim 3, characterized in that, The first gap is between 10 μm and 40 μm; The second gap is between 10 μm and 40 μm; The third gap is between 10μm and 40μm.

5. The light-emitting diode according to claim 1, characterized in that, The first light-emitting unit, the second light-emitting unit, and the third light-emitting unit are electrically insulated from each other by an insulating layer; and each of the first light-emitting unit, the second light-emitting unit, and the third light-emitting unit is provided with a conductive layer to form a series connection. The conductive layer of the first light-emitting unit and the first electrode are electrically connected to each other through the insulating layer; The conductive layer of the second light-emitting unit and the conductive layer of the first light-emitting unit are electrically connected to each other through the insulating layer; The conductive layer of the third light-emitting unit and the conductive layer of the second light-emitting unit are electrically connected to each other through the insulating layer; The conductive layer of the second electrode and the third light-emitting unit are electrically connected to each other through the insulating layer.

6. The light-emitting diode according to claim 5, characterized in that, The conductive layer includes a first conductive layer and a second conductive layer stacked sequentially from top to bottom; The first conductive layer of the first light-emitting unit is electrically connected to the first electrode; The second conductive layer of the first light-emitting unit is electrically connected to the first conductive layer of the second light-emitting unit; The second conductive layer of the second light-emitting unit is electrically connected to the first conductive layer of the third light-emitting unit; The second conductive layer of the third light-emitting unit is electrically connected to the second electrode.

7. The light-emitting diode according to claim 6, characterized in that, The first conductive layer includes a transparent conductive layer, a first reflective layer, and a current spreading layer arranged sequentially from top to bottom; The second conductive layer includes a second reflective layer and a bridging layer arranged sequentially from top to bottom; The current spreading layer of the first light-emitting unit is electrically connected to the first electrode; The bridging layer of the first light-emitting unit is electrically connected to the current spreading layer of the second light-emitting unit; The bridging layer of the second light-emitting unit is electrically connected to the current spreading layer of the third light-emitting unit; The bridging layer of the third light-emitting unit is electrically connected to the second electrode through the current spreading layer disposed below the second electrode.

8. The light-emitting diode according to claim 7, characterized in that, The first light-emitting unit, the second light-emitting unit, and the third light-emitting unit all include a semiconductor stack. The semiconductor stack includes a first semiconductor layer, an active layer, and a second semiconductor layer arranged sequentially from top to bottom. At least one groove is provided in the semiconductor stack, and the groove penetrates the second semiconductor layer, the active layer, and at least a portion of the first semiconductor layer. The transparent conductive layer is disposed below a portion of the second semiconductor layer; The insulating layer includes a first insulating layer, which is disposed below the transparent conductive layer and extends to cover the sidewall of the groove. The first insulating layer located below the transparent conductive layer is provided with a plurality of first through holes. The first reflective layer is disposed below the first insulating layer located below the transparent conductive layer, and the first reflective layer is disposed within the first through hole, so that the first reflective layer is electrically connected to the second semiconductor layer through the transparent conductive layer; The current spreading layer is disposed below the first reflective layer, and the current spreading layer of the first light-emitting unit extends to cover the area below the first electrode.

9. The light-emitting diode according to claim 8, characterized in that, The insulating layer further includes a second insulating layer; The second insulating layer is disposed between the current spreading layer and the second reflective layer, and extends to cover the first insulating layer in the groove and the current spreading layer below the second electrode; The first conductive layers of the first light-emitting unit, the second light-emitting unit, and the third light-emitting unit are electrically insulated from each other by the first insulating layer and the second insulating layer; The current spreading layer of the third light-emitting unit is electrically insulated from the current spreading layer below the second electrode by the second insulating layer.

10. The light-emitting diode according to claim 9, characterized in that, A second reflective layer is disposed below a portion of the second insulating layer; a second reflective layer is disposed on the second insulating layer within the groove and on the bottom wall of the groove, so as to be electrically connected to the first semiconductor layer; A portion of the second insulating layer of the second light-emitting unit and a portion of the second insulating layer of the third light-emitting unit are provided with a second through hole, and at least one third through hole is provided in the second insulating layer below the second electrode; The bridging layer is provided below the second reflective layer, inside the second through hole, and inside the third through hole; The insulating layer further includes a third insulating layer, which is disposed below the bridging layer. The bridging layers of the first light-emitting unit, the second light-emitting unit, and the third light-emitting unit are electrically insulated from each other through the third insulating layer.

11. The light-emitting diode according to claim 10, characterized in that, Below the third insulating layer, from top to bottom, a bonding layer, a substrate, and a back gold layer are sequentially disposed.

12. A light-emitting device, characterized in that, It includes a circuit board and a plurality of light-emitting elements disposed on the circuit board, wherein the light-emitting elements include light-emitting diodes as described in any one of claims 1 to 11.

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