Apparatus for manufacturing display device

Abstract

An apparatus for manufacturing a display device includes: a mask electrostatic chuck; a mask support placed on the mask electrostatic chuck; and a mask placed on the mask support member. The mask electrostatic chuck may include: a seating portion on which the mask support is seated; a contact portion configured to contact the mask; and a position alignment portion configured to align a position of the mask support.

Description

[0001] This application claims priority to Korean Patent Application No. 10-2024-0153729, filed on November 1, 2024, the entire contents of which are incorporated herein by reference. Technical Field

[0002] Various embodiments of this disclosure relate to apparatus for manufacturing display devices, methods for manufacturing display devices, and electronic devices. Background Technology

[0003] With the development of information technology, the importance of display devices as a medium connecting users and information is receiving increasing attention. Accordingly, research and development of display devices has been ongoing.

[0004] Display devices are formed by placing a patterned mask on a substrate and depositing material onto the substrate. To ensure proper material formation on the substrate, it is important to ensure the mask is firmly and properly secured in place. Summary of the Invention

[0005] Features of this disclosure relate to an apparatus for manufacturing a display device, a method for manufacturing a display device, and an electronic device, wherein a mask can be appropriately fixed to minimize the gap between the mask and the substrate and to improve the parallelism between the mask and the substrate.

[0006] Features of this disclosure relate to an apparatus for manufacturing a display device, a method for manufacturing a display device, and an electronic device capable of automatically replacing a mask support for a support mask with another mask support.

[0007] The features of this disclosure are not limited to the objects described above, and those skilled in the art will clearly understand from the appended claims that other unmentioned objects will not be mentioned.

[0008] One embodiment of this disclosure provides an apparatus for manufacturing a display device, comprising: a mask electrostatic chuck; a mask support placed on the mask electrostatic chuck; and a mask placed on the mask support. The mask electrostatic chuck may include: a placement portion on which the mask support is placed; a contact portion configured to contact the mask; and a positioning alignment portion configured to align with the position of the mask support.

[0009] In one embodiment, the mask electrostatic chuck may further include a peripheral portion disposed outside the contact portion. The height of the peripheral portion may be less than the height of the contact portion.

[0010] In one embodiment, the height of the placement portion may be less than the height of the contact portion.

[0011] In one embodiment, the mounting portion and the contact portion may have different heights from each other. The difference between the height of the mounting portion and the height of the contact portion may be equal to or greater than the thickness of the mask support.

[0012] In one embodiment, the device may further include a conveying component configured to convey at least one of the mask support and the mask. The conveying component may not contact the peripheral portion.

[0013] In one embodiment, the device may further include a camera. A camera aperture extends through the contact portion. The camera may correspond to the camera aperture. The camera may be configured to capture an image of the mask.

[0014] In one embodiment, the positioning alignment portion may include a groove defined in the peripheral portion.

[0015] In one embodiment, in a cross-sectional view, the groove may have a constant width or a width that increases from its bottom end to its top end.

[0016] In one embodiment, the mask support may include: a support frame; and a guide connected to and protruding from the support frame. The guide may be placed on the alignment portion.

[0017] In one embodiment, the guide may have a rod shape in a plan view.

[0018] In one embodiment, the mask support may further include an outer guide frame connected to the guide. The outer guide frame may have an annular shape in a plan view.

[0019] In one embodiment, the positioning alignment portion may include: a protrusion connected to and protruding from the placement portion; and a pin. The protrusion may define a protruding hole through at least a portion of the protrusion. The pin may be inserted into the protruding hole. The pin may protrude from the upper surface of the protrusion.

[0020] In one embodiment, the contact portion may be connected to the placement portion. The peripheral portion may be connected to the contact portion.

[0021] In one embodiment, in a cross-sectional view, the pin may have a constant width or a width that increases from its top to its bottom.

[0022] In one embodiment, the mask support may define a guide hole through which the mask support passes. The pin may be inserted into the guide hole.

[0023] In one embodiment, the guide hole may include a first guide hole and a second guide hole. In a plan view, the second guide hole may have an area larger than that of the first guide hole.

[0024] One embodiment of this disclosure provides an apparatus for manufacturing a display device, the display device including a substrate. The apparatus includes: a substrate electrostatic chuck placed on the substrate; a mask with a pattern configured to correspond to a pattern of material formed on the substrate; a mask electrostatic chuck disposed below the mask; and a substrate electrostatic chuck moving member configured to move the substrate electrostatic chuck. The substrate electrostatic chuck moving member may be configured to move the substrate electrostatic chuck to change the shape of the substrate.

[0025] In one embodiment, the device may further include: a pressure sensor configured to measure pressure applied to the substrate; and a distance sensor configured to measure the distance between the substrate and the mask. The substrate may be bent by the substrate electrostatic chuck moving component.

[0026] One embodiment of this disclosure provides an apparatus for manufacturing a display device, the display device including a substrate. The apparatus includes: a substrate electrostatic chuck placed on the substrate; a mask with a pattern configured to correspond to a pattern of material formed on the substrate; a mask electrostatic chuck disposed below the mask; and a mask electrostatic chuck moving member configured to move the mask electrostatic chuck. The mask electrostatic chuck moving member may be configured to move the mask electrostatic chuck to change the shape of the mask.

[0027] In one embodiment, the mask electrostatic chuck may include a plurality of mask electrostatic chucks. The plurality of mask electrostatic chucks may be movable and spaced apart from each other. The mask electrostatic chuck moving components may include a number of mask electrostatic chuck moving components corresponding to the number of the plurality of mask electrostatic chucks. The mask electrostatic chuck moving components can tension the mask.

[0028] One embodiment of this disclosure provides a method for manufacturing a display device, including: forming a pixel circuit layer on a substrate; and forming a light-emitting element on the pixel circuit layer. Forming the light-emitting element may include depositing an emitting layer using equipment for manufacturing a display device. The equipment may include: a mask electrostatic chuck; a mask support placed on the mask electrostatic chuck; and a mask that allows material for depositing the emitting layer on the substrate to pass through the mask. The mask electrostatic chuck may include: a placement portion on which the mask support is placed; a contact portion configured to contact the mask; and a positioning alignment portion configured to align the position of the mask support.

[0029] One embodiment of this disclosure provides a method for manufacturing a display device, including: forming a pixel circuit layer on a substrate; and forming a light-emitting element on the pixel circuit layer. Forming the light-emitting element may include depositing an emitting layer using equipment for manufacturing a display device. The equipment may include: a substrate electrostatic chuck configured to fix the substrate; a mask with a pattern corresponding to the pattern of the emitting layer; a mask electrostatic chuck disposed below the mask; and a substrate electrostatic chuck moving component configured to move the substrate electrostatic chuck. The substrate electrostatic chuck moving component can move the substrate electrostatic chuck to change the shape of the substrate.

[0030] One embodiment of this disclosure provides a method for manufacturing a display device, including: forming a pixel circuit layer on a substrate; and forming a light-emitting element on the pixel circuit layer. Forming the light-emitting element may include depositing an emitting layer using equipment for manufacturing a display device. The equipment may include: a substrate electrostatic chuck configured to fix the substrate; a mask with a pattern corresponding to the pattern of the emitting layer; a mask electrostatic chuck disposed below the mask; and a mask electrostatic chuck moving member configured to move the mask electrostatic chuck. The mask electrostatic chuck moving member can move the mask electrostatic chuck to change the shape of the mask.

[0031] One embodiment of this disclosure provides an electronic device including: a processor; and a display device including pixels and configured to display an image on the pixels under the control of the processor. The display device may be manufactured by a manufacturing method. Attached Figure Description

[0032] The above and other embodiments, advantages and features of this disclosure will become more apparent from the further detailed description of the embodiments of this disclosure with reference to the accompanying drawings.

[0033] Figure 1 A schematic cross-sectional view is shown as an example of an embodiment of an apparatus for manufacturing a display device.

[0034] Figure 2 Here is a schematic plan view illustrating one embodiment of the mask.

[0035] Figure 3 and Figure 4 A schematic plan view illustrating one embodiment of a mask support.

[0036] Figure 5 The diagram shows an enlarged schematic representation of an embodiment of a mask electrostatic chuck.

[0037] Figure 6 This is a schematic enlarged view illustrating an embodiment of a guide placed on a positioning alignment portion.

[0038] Figure 7 Here is a schematic cross-sectional view illustrating one embodiment of the manufacturing equipment.

[0039] Figure 8 A schematic perspective view illustrating an embodiment of a mask support placed on a mask electrostatic chuck.

[0040] Figure 9 Here is a schematic plan view illustrating one embodiment of the mask support.

[0041] Figure 10 The diagram shows an enlarged schematic representation of an embodiment of a mask electrostatic chuck.

[0042] Figure 11 A schematic cross-sectional view is shown as an example of an embodiment of an apparatus for manufacturing a display device.

[0043] Figure 12 A schematic perspective view illustrating an embodiment of a mask support placed on a mask electrostatic chuck.

[0044] Figure 13 A schematic cross-sectional view is shown as an example of an embodiment of an apparatus for manufacturing a display device.

[0045] Figure 14 Here is a schematic cross-sectional view illustrating one embodiment of the manufacturing equipment.

[0046] Figure 15 A schematic plan view illustrating one embodiment of a mask electrostatic chuck is shown below.

[0047] Figure 16 Here is a plan view of one embodiment of the display device in the example embodiment.

[0048] Figure 17 The diagram shows a plan view of one embodiment of a sub-pixel.

[0049] Figure 18 For along Figure 17 The cross-sectional view taken from line I-I'.

[0050] Figure 19 The flowchart illustrates an embodiment of a method for manufacturing a display device.

[0051] Figure 20 For example, including Figure 16 A block diagram of an embodiment of an electronic device for a display device.

[0052] Figure 21 For example, it can be used Figure 20 A perspective view of an embodiment of a smartphone implemented by an electronic device.

[0053] Figure 22 For example, it can be used Figure 20 A perspective view of an embodiment of a tablet computer implemented by an electronic device. Detailed Implementation

[0054] In the following description, embodiments of the present disclosure will be described in detail with reference to the accompanying drawings. In this description, only components necessary for understanding operation according to the present disclosure will be described, and descriptions of other components will be omitted so as not to obscure the main points of the disclosure. Accordingly, the present disclosure is not limited to the embodiments set forth herein, but may be implemented in other types. Rather, these embodiments are provided so that the present disclosure will be thorough and complete, and will fully convey the technical spirit of the present disclosure to those skilled in the art.

[0055] It will be understood that when an element is referred to as “connected” or “linked” to another element, it may be directly connected or linked, or an intermediary element may be present between them. The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting. In the specification, when an element is referred to as “comprising” or “including” a component, it does not exclude another component but may further include other components unless the context clearly indicates otherwise. “At least one of X, Y, and Z” and “at least one selected from the group consisting of X, Y, and Z” can be interpreted as only X, only Y, only Z, or any combination of two or more of X, Y, and Z (e.g., XYZ, XY, YZ, or XZ). As used herein, the term “and / or” can include any and all combinations of one or more of the associated enumerated items.

[0056] Although the terms "first," "second," etc., may be used herein to describe various types of elements, these elements should not be limited by these terms. These terms are used only to distinguish one element from others. Therefore, without departing from the teachings of this disclosure, the first element discussed below may be referred to as the second element.

[0057] Spatial relative terms such as “below,” “under,” “below,” “down,” “above,” “above,” “higher,” and “side” (e.g., as in “sidewall”) may be used herein for descriptive purposes to describe the relationship of one element or feature illustrated in the figures to another element or feature. Spatial relative terms are intended to encompass different orientations of the device in use, operation, and / or manufacture, in addition to those depicted in the figures. For example, if the device in the figures were flipped, an element described as “below” or “under” other elements or features would then be oriented as “above” other elements or features. Thus, the term “below” can encompass both above and below orientations. Furthermore, the device may be oriented in other ways (e.g., rotated 90 degrees or in other orientations), and in such cases, the spatial relative descriptive terms used herein should be interpreted accordingly.

[0058] Various embodiments will be described with reference to figures illustrating idealized embodiments. Thus, variations in the shape of the figures will be expected due to, for example, manufacturing techniques and / or tolerances. Therefore, the embodiments disclosed herein should not be construed as limited to specific illustrated shapes, but should include shape deviations due to, for example, manufacturing processes. Thus, the shapes illustrated in the figures may not represent the actual shape of areas of the device, and are therefore not intended to be limiting.

[0059] Various embodiments of this disclosure relate to apparatus for manufacturing a display device, methods for manufacturing a display device, and electronic devices. The apparatus for manufacturing a display device may include at least one of a mask fixing device and a deposition device. Hereinafter, embodiments of the apparatus for manufacturing a display device including a deposition device will be described. However, this disclosure is not limited to the foregoing embodiments. Hereinafter, embodiments of this disclosure will be described in detail with reference to the accompanying drawings.

[0060] Figure 1 A schematic cross-sectional view is shown as an example of an embodiment of a device DM used for manufacturing a display device. Figure 2 Here is a schematic plan view illustrating one embodiment of a mask MS.

[0061] refer to Figure 1 Display device manufacturing equipment (DM) (also known as "manufacturing equipment DM") deposits material onto a substrate SUB. Manufacturing equipment DM may include a chamber CH, a substrate electrostatic chuck ESC, a mask support MSS, a mask electrostatic chuck MSE, a camera CAM, and / or a deposition source S.

[0062] A chamber CH can define an internal space, allowing deposition processes to be performed within the internal space of the chamber CH. In one embodiment, for example, a substrate electrostatic chuck ESC, a mask support MSS, a mask electrostatic chuck MSE, a camera CAM, and / or a deposition source S can be provided in the chamber CH.

[0063] In one embodiment, a chamber CH may be defined with an opening therein. In another embodiment, a gate valve or the like may be disposed in the opening of the chamber CH. The opening of the chamber CH may be opened or closed by the gate valve or the like.

[0064] A mask support member (MSS) can support or fix the mask (MS). In one embodiment, for example, the mask support member (MSS) can be disposed below the mask (MS), thus preventing the mask (MS) from sagging due to gravity.

[0065] The mask electrostatic chuck MSE can be positioned below the mask support MSS to move the mask support MSS within a predetermined distance range in the vertical and / or horizontal directions, or to rotate the mask support MSS within a predetermined angle range. The mask electrostatic chuck MSE can use electrostatic force to fix the mask MS.

[0066] The mask electrostatic chuck (MSE) may include a mounting portion (MSE_S), a contact portion (MSE_C), and a peripheral portion (MSE_O). The mounting portion (MSE_S) may be the area for mounting a mask support member (MSS). The mask support member (MSS) may be placed on the mounting portion (MSE_S) of the mask electrostatic chuck (MSE). The mask support member (MSS) may contact at least a portion of the mounting portion (MSE_S).

[0067] The contact portion MSE_C may include a region of a mask MS contacting a mask electrostatic chuck MSE. The mask MS may be clamped and secured to the contact portion MSE_C by electrostatic force. The contact portion MSE_C may define a camera aperture MSE_H passing through at least one region of the contact portion MSE_C.

[0068] The peripheral portion MSE_O can be located outside the placement portion MSE_S and the contact portion MSE_C (e.g., farther from the center of the mask MS in a plan view), and can surround the placement portion MSE_S and the contact portion MSE_C in a plan view.

[0069] The mask MS can be placed on the mask support MSS and the mask electrostatic chuck MSE. The mask MS may include a fine metal mask (“FMM”) or a silicon mask.

[0070] refer to Figure 2 The mask MS may define an opening OPN therein and includes a frame FR providing ribs LI that define the opening OPN. Ribs LI may be coupled (or connected) to the frame FR, some of which extend in a first direction DR1, and the remaining (or other) ribs LI extend in a second direction DR2, thereby defining the opening OPN. Hereinafter, the first direction DR1 and the second direction DR2 may refer to the directions in which the plane in which the substrate SUB is placed extends, while the third direction DR3 may refer to the direction perpendicular to the plane in which the substrate SUB is placed.

[0071] In one embodiment, the opening OPN can be provided as a plurality of openings. In one embodiment, for example, a plurality of opening OPNs can be defined within the frame FR of the mask MS. The opening OPNs can be patterned. In one embodiment, for example, the pattern of the mask MS can correspond to a deposited pattern (or a pattern of material) formed on the substrate SUB.

[0072] exist Figure 2 In this illustration, the frame FR is shown to have a circular shape, but this disclosure is not limited thereto. The frame FR can have various shapes.

[0073] Return to reference Figure 1 The substrate SUB, on which the deposition material is deposited, is placed on the mask electrostatic chuck MSE and / or the mask MS. The substrate SUB can be a display device DD (reference). Figure 16 The motherboard (or substrate) of ).

[0074] A substrate electrostatic chuck (ESC) may be placed on a substrate SUB. The substrate ESC may be disposed on a mask electrostatic chuck (MSE) and / or a mask MS. The substrate ESC can be used to hold the substrate SUB in place using electrostatic force and to firmly attach the substrate SUB to the mask MS. The substrate ESC may be coupled to the substrate SUB to prevent movement of the substrate SUB during the deposition process. The substrate ESC may include electrodes disposed therein. The electrodes may include at least one first electrode and at least one second electrode. The at least one first electrode may have a first polarity, while the at least one second electrode may have a second polarity opposite to the first polarity. In one embodiment, the manufacturing apparatus DM may further include a driver for driving the substrate ESC. The driver may be connected to the substrate ESC to drive the substrate ESC. In one embodiment, for example, the driver may include a power supply. The power supply of the driver may be electrically connected to the electrodes (e.g., the first and second electrodes) of the substrate ESC. When the power supply of the driver applies a predetermined voltage to the substrate ESC, electrostatic force can be generated in the substrate ESC. Accordingly, the substrate SUB and the mask MS can be brought into close contact with each other by electrostatic force. In one embodiment, for example, because the electrostatic force generated from the substrate electrostatic chuck ESC can pull the substrate SUB and the mask MS in the direction toward the substrate electrostatic chuck ESC (e.g., third direction DR3) (e.g., because an attractive force is generated between the substrate electrostatic chuck ESC and the substrate SUB and / or between the substrate electrostatic chuck ESC and the mask MS), the connection force between the substrate SUB and the mask MS can be increased, and sagging of the substrate SUB and the mask MS can be prevented.

[0075] In one embodiment, when the mask MS is a fine metal mask, a yoke with a permanent magnet can be further placed on the substrate electrostatic chuck ESC. Since the yoke is positioned to overlap with the substrate electrostatic chuck ESC, the substrate SUB and the mask MS can be more tightly attached to each other not only by the electrostatic force generated from the substrate electrostatic chuck ESC but also by the magnetic force generated from the yoke. In one embodiment, for example, the magnetic force generated by the yoke can pull the mask (e.g., a fine metal mask) comprising metal or made of metal in a direction toward the yoke (e.g., in the third direction DR3), thereby further increasing the connection force between the substrate SUB and the mask MS and preventing the mask MS from sagging.

[0076] In one embodiment, the manufacturing apparatus DM may further include a transfer member TP that transfers at least one of a mask MS and a mask support MSS. The transfer member TP is movable within a predetermined distance range in the vertical and / or horizontal directions, allowing replacement of at least one of the mask MS and mask support MSS with another. In one embodiment of the manufacturing apparatus DM, the peripheral portion MSE_O is formed below the contact portion MSE_C, thereby preventing the transfer member TP from contacting the mask electrostatic chuck MSE during entry. Reference will be made below. Figure 5 Provide a description related to the aforementioned structure.

[0077] The camera CAM can be positioned below (or corresponding to) the camera aperture MSE_H. In one embodiment, for example, the camera CAM can be positioned below the mask electrostatic chuck MSE in which the camera aperture MSE_H is defined. The camera CAM can capture images of the mask MS and the substrate SUB. In one embodiment, for example, the camera CAM can capture alignment marks formed in the mask MS and the substrate SUB to measure the alignment accuracy between the substrate SUB and the mask MS.

[0078] A deposition source S may be disposed in a chamber CH. A deposition material may be provided in the deposition source S. The deposition source S may evaporate at least one of an organic material, an inorganic material, and a conductive material toward a mask MS. The deposition material may be deposited onto a substrate SUB through the mask MS. In one embodiment, for example, the deposition source S may deposit the deposition material onto the substrate SUB by evaporating the deposition material by heating it to a relatively high temperature. In one embodiment, for example, the deposition source S may include a heater for heating the deposition material.

[0079] The nozzle component NZ may be connected to the deposition source S to provide deposited material evaporated or sublimated from the deposition source S to the outside. The nozzle component NZ may include at least one nozzle. In one embodiment, for example, the nozzles may include dot nozzles spaced apart from each other and arranged in a dot pattern. In another embodiment, the nozzles may include line nozzles that spray deposited material over a predetermined area. In one embodiment, the manufacturing apparatus DM may further include a pressure controller. The pressure controller may be connected to the chamber CH to adjust the pressure in the chamber CH. In one embodiment, for example, the pressure controller may include a connecting pipe connected to the chamber CH and a pump provided on the connecting pipe. The connecting pipe may be connected to a separate device for performing the removal of external contaminants.

[0080] Process yield can be affected by the uniformity of the mask MS and the manual replacement of the mask MS during the deposition process. In one embodiment, for example, if a gap exists between the mask MS and the substrate SUB (or if the mask MS sags due to gravity), the deposited material may not be deposited properly on the substrate SUB, leading to increased process variations and reduced yield, thereby reducing the reliability of the deposition process. Furthermore, if the mask MS is manually replaced with another mask MS for reasons such as cleaning the mask MS, the yield may be reduced due to the time required for replacement.

[0081] Therefore, it is desirable to adjust the uniformity of the mask MS and automatically replace the mask MS with another mask MS. To achieve the aforementioned objective, in one embodiment, the manufacturing apparatus DM may include a mask support MSS and a mask electrostatic chuck MSE, and the mask electrostatic chuck MSE may further include a position alignment portion MSE_A (refer to...). Figure 5 and Figure 10 For a detailed description related to the foregoing content, please refer to... Figures 3 to 12 .

[0082] Figures 3 to 8 An example of a manufacturing equipment DM is shown.

[0083] Figure 3 and Figure 4 Here are schematic plan views illustrating the respective mask support components (MSS). Figure 5 The following is a schematic enlarged view of a mask electrostatic chuck (MSE) as an example. Figure 6 Here is a schematic enlarged view of the guide MSS_G placed on the positioning alignment part MSE_A as an example. Figure 7 Here is a schematic cross-sectional view of a manufacturing equipment DM. Figure 8 A schematic perspective view of a mask support MSS placed on a mask electrostatic chuck MSE is shown as an example.

[0084] refer to Figure 3 The mask support MSS may define a support opening MSS_OPN therein, and may include a support frame MSS_FR that provides support ribs MSS_LI that define the support opening MSS_OPN. Support ribs MSS_LI may be coupled (or connected) to the support frame MSS_FR, some of which extend in a first direction DR1, and the remaining (or other) support ribs MSS_LI extend in a second direction DR2, thereby defining the support opening MSS_OPN.

[0085] In one embodiment, the support opening MSS_OPN may include a plurality of support openings MSS_OPN. In one embodiment, for example, the plurality of support openings MSS_OPN may be defined within the support frame MSS_FR of the mask support MSS. The number of support openings MSS_OPN may correspond to the number of openings OPN of the mask MS. The support openings MSS_OPN may be patterned. In one embodiment, for example, the pattern of the mask support MSS may correspond to a deposition pattern formed in the substrate SUB.

[0086] The distance between support openings MSS_OPN can be less than or equal to the distance between mask openings OPN. The width of each support opening MSS_OPN can be equal to or greater than the width of each mask opening OPN. Accordingly, the mask support MSS can support the mask MS without covering the pattern of the mask MS.

[0087] In one embodiment, the mask support MSS may include a guide MSS_G. The guide MSS_G may protrude from and be connected to the support frame MSS_FR. In one embodiment, for example, the guide MSS_G protruding from the support frame MSS_FR may be integral with the support frame MSS_FR.

[0088] The guide MSS_G may have a rod shape in a plan view. In one embodiment, for example, in a plan view, the guide MSS_G may have a quadrilateral shape, such as a rectangular shape or a trapezoidal shape whose width decreases from one end to the other.

[0089] In one embodiment, the bootloader MSS_G may be provided as multiple units. In one embodiment, for example, the bootloader MSS_G may include a first bootloader MSS_G1, a second bootloader MSS_G2, a third bootloader MSS_G3, and a fourth bootloader MSS_G4.

[0090] although Figure 3 An embodiment in which four guides MSS_G are provided is illustrated, but this disclosure is not limited thereto. In one embodiment, for example, the guides MSS_G may be provided as a single unit or as two or more units. In one embodiment, when the guides MSS_G are provided as two or more units, the mask support MSS may be more stably mounted on the mask electrostatic chuck MSE.

[0091] The first guide MSS_G1, the second guide MSS_G2, the third guide MSS_G3, and the fourth guide MSS_G4 may be arranged in a clockwise direction. In one embodiment, for example, in a plan view, the first guide MSS_G1 may be located on the upper side of the support frame MSS_FR, the second guide MSS_G2 may be located on the right side of the support frame MSS_FR, the third guide MSS_G3 may be located on the lower side of the support frame MSS_FR, and the fourth guide MSS_G4 may be located on the left side of the support frame MSS_FR.

[0092] exist Figure 3 The example illustrates a configuration where a first guide MSS_G1 is arranged to form a 90° angle with each of the second guide MSS_G2 and the fourth guide MSS_G4, and a third guide MSS_G3 is arranged to form a 90° angle with each of the second guide MSS_G2 and the fourth guide MSS_G4. However, this disclosure is not limited to the foregoing embodiments. In one embodiment, for example, the angle between each of the first guide MSS_G1 and the third guide MSS_G3 and the second guide MSS_G2 may be acute or obtuse. The angle between each of the first guide MSS_G1 and the third guide MSS_G3 and the fourth guide MSS_G4 may be acute or obtuse.

[0093] In one embodiment of this disclosure, the mask support MSS may include metal. However, this disclosure is not limited to the foregoing embodiments.

[0094] refer to Figure 4 In one embodiment, the mask support MSS may further include an outer guide frame MSS_R. The outer guide frame MSS_R may be connected to the guide MSS_G. In one embodiment, for example, the outer guide frame MSS_R may be integral with the guide MSS_G. The outer guide frame MSS_R, the guide MSS_G, the support frame MSS_FR, and the support rib MSS_LI may each comprise metal and may be integral with each other.

[0095] The outer guide frame MSS_R may have a ring shape in the plan view. In one embodiment, for example, the outer guide frame MSS_R may have a circular ring shape in the plan view. In the plan view, the outer guide frame MSS_R may surround the support frame MSS_FR.

[0096] refer to Figure 5The mask electrostatic chuck MSE may include a mounting portion MSE_S, a contact portion MSE_C, and a peripheral portion MSE_O. In a plan view, the mounting portion MSE_S may be further inward than the contact portion MSE_C, and the contact portion MSE_C may be further inward than the peripheral portion MSE_O. In the description, "further inward than" may mean "located closer to the center of the mask MS in a plan view". The mounting portion MSE_S may be connected to the contact portion MSE_C. The contact portion MSE_C may be connected to the peripheral portion MSE_O.

[0097] The mounting portion MSE_S and the contact portion MSE_C may have different heights. The mounting portion MSE_S and the contact portion MSE_C may form a step H_CS. The step H_CS may correspond to the height difference between the mounting portion MSE_S and the contact portion MSE_C.

[0098] The upper surface MSE_SS of the placement portion MSE_S and the upper surface of the contact portion MSE_C can be located at different positions. In one embodiment, for example, the height of the placement portion MSE_S can be less than the height of the contact portion MSE_C. Hereinafter, height can be defined as the vertical distance from the lower surface to the upper surface in the third direction DR3.

[0099] In one embodiment, the height of the step H_CS formed between the mounting portion MSE_S and the contact portion MSE_C can be constant. In one embodiment, for example, the contact portion MSE_C can have a constant thickness from one end connected to the mounting portion MSE_S to the opposite end connected to the peripheral portion MSE_O. The angle defined between the upper surface MSE_SS of the mounting portion MSE_S and the side surface of the contact portion MSE_C can be approximately 90°. The distance between the upper surface MSE_SS of the mounting portion MSE_S and the upper surface of the contact portion MSE_C can be constant. However, this disclosure is not limited to the foregoing embodiments.

[0100] In one embodiment, for example, the height of the step H_CS formed between the mounting portion MSE_S and the contact portion MSE_C may increase with increasing distance from the mounting portion MSE_S and then become constant. In one embodiment, for example, the contact portion MSE_C may include a first portion and a second portion, the first portion having a thickness that increases from one end connected to the mounting portion MSE_S to the opposite end connected to the peripheral portion MSE_O, and the second portion being connected to the first portion and having a constant thickness. The angle defined between the upper surface MSE_SS of the mounting portion MSE_S and the side surface of the contact portion MSE_C may be greater than 90° and less than 180°. In this case, the contact portion MSE_C may include a tapered (or inclined) side surface.

[0101] The height of step H_CS can be equal to or greater than the thickness of mask support MSS. The thickness of mask support MSS can be defined as the thickness of support frame MSS_FR on the third direction DR3. The height of step H_CS can be equal to or greater than the thickness of mask support MSS, such that when mask support MSS is placed on placement portion MSE_S, mask support MSS does not protrude from the upper surface of contact portion MSE_C on the third direction DR3.

[0102] Because the step H_CS is formed in the mask electrostatic chuck MSE, the mask support MSS can be stably placed on the upper surface MSE_SS of the placement part MSE_S, and the mask support MSS can reliably fix the mask MS, thereby minimizing the gap between the mask MS and the substrate SUB, and improving the parallelism between the mask MS and the substrate SUB.

[0103] The contact portion MSE_C may include the contact surface MSE_CS of the contact mask MS. The contact surface MSE_CS may be defined as a clamping surface that holds the mask MS when the contact portion MSE_C contacts the mask MS, and may correspond to the upper surface of the contact portion MSE_C.

[0104] The contact portion MSE_C may define a camera hole MSE_H that passes through the contact portion MSE_C. The camera hole MSE_H may pass through a portion of the contact portion MSE_C on the third direction DR3. In the plan view, the camera hole MSE_H may be positioned around the edge of the contact surface MSE_CS.

[0105] The peripheral portion MSE_O can be connected to the contact portion MSE_C and can be located outside the contact portion MSE_C. The peripheral portion MSE_O can have a ring shape (or annular shape) in the plan view.

[0106] The contact portion MSE_C and the peripheral portion MSE_O may have different heights. In one embodiment, for example, the upper surface MSE_OS of the peripheral portion MSE_O and the upper surface (e.g., the contact surface MSE_CS) of the contact portion MSE_C may be located at different positions. In one embodiment, for example, the height of the peripheral portion MSE_O may be less than the height of the contact portion MSE_C. In one embodiment, for example, the upper surface MSE_OS of the peripheral portion MSE_O may be located at a position lower than the upper surface (e.g., the contact surface MSE_CS) of the contact portion MSE_C. Accordingly, when the transfer member TP approaches (or is adjacent to) the mask MS to transfer at least one of the mask MS and the mask support MSS, the transfer member TP may not contact the mask electrostatic chuck MSE (e.g., the peripheral portion MSE_O), thereby avoiding interference between the transfer member TP and the mask electrostatic chuck MSE.

[0107] The peripheral portion MSE_O may further include a positioning alignment portion MSE_A. The positioning alignment portion MSE_A may correspond to (or include) a slot defined in the peripheral portion MSE_O. In one embodiment, for example, the positioning alignment portion MSE_A may correspond to a slot defined by causing a portion of the upper surface MSE_OS of the peripheral portion MSE_O to be recessed in a direction opposite to the third direction DR3. The positioning alignment portion MSE_A may extend in a direction intersecting the peripheral portion MSE_O (e.g., a second direction DR2) and may correspond to a slot defined in the upper surface MSE_OS of the peripheral portion MSE_O. In one embodiment, the positioning alignment portion MSE_A may be configured to align with the position of the mask support MSS.

[0108] In the cross-sectional view, the alignment portion MSE_A may have a quadrilateral shape, such as a rectangular shape with a constant width, or a trapezoidal shape with a width that increases from the bottom to the top. In one embodiment, for example, in the cross-sectional view, the alignment portion MSE_A may have a shape with a constant width in the third direction DR3, or a trapezoidal shape (or a conical shape) with a width that increases in the third direction DR3.

[0109] refer to Figure 6 The guide MSS_G can be placed on the alignment portion MSE_A. The guide MSS_G can be positioned in a slot of the mask electrostatic chuck MSE. To achieve the aforementioned objective, the width of the alignment portion MSE_A can be equal to the width of the guide MSS_G. In one embodiment, the width of the alignment portion MSE_A can be greater than the width of the guide MSS_G, provided that the mask support MSS does not rotate (or move) excessively when the guide MSS_G is placed on the alignment portion MSE_A.

[0110] In one embodiment, if the slot of the positioning alignment portion MSE_A has a trapezoidal (or conical) shape in the cross-sectional view with a width increasing in the third direction DR3, the guide MSS_G can be more easily placed on the positioning alignment portion MSE_A.

[0111] The guide MSS_G guides the mask support MSS, ensuring that the mask support MSS is positioned correctly on the mask electrostatic chuck MSE. In one embodiment, reference is made to... Figure 7 and Figure 8For example, a number of alignment portions MSE_A corresponding to the number of guides MSS_G can be provided. The mask support MSS can rotate until the guides MSS_G are positioned to contact the respective alignment portions MSE_A of the mask electrostatic chuck MSE. When the guides MSS_G are positioned to overlap with the alignment portions MSE_A, the mask support MSS can stop rotating and be positioned on the mask electrostatic chuck MSE (or the alignment portions MSE_A). In one embodiment, for example, when the guides MSS_G are positioned not to overlap with the alignment portions MSE_A, the mask support MSS may not be properly positioned on the mask electrostatic chuck MSE.

[0112] In one embodiment, the manufacturing equipment DM may include a positioning alignment portion MSE_A, thereby allowing a mask support MSS to be placed on a mask electrostatic chuck MSE without being bonded to the mask electrostatic chuck MSE and the mask MS by means of welding or the like. Furthermore, the mask support MSS may be automatically replaceable.

[0113] In the absence of a device excluding the alignment portion MSE_A, the structure supporting the mask MS is fixed to the mask electrostatic chuck by welding or the like. Correspondingly, the structure supporting the mask MS is manually replaced, resulting in an increase in process time. In contrast, in one embodiment, the manufacturing equipment DM may include the alignment portion MSE_A and the guide MSS_G, thus avoiding the need for the mask support MSS to be bonded to the mask electrostatic chuck MSE by welding or the like, and allowing the mask support MSS to be automatically replaced by a component such as the transfer component TP.

[0114] Figures 9 to 12 An embodiment of an apparatus DM' for manufacturing a display device is shown.

[0115] Figure 9 Here is a schematic plan view of the mask support MSS' as an example. Figure 10 Here is a schematic enlarged view of the mask electrostatic chuck MSE' as an example. Figure 11 Here is a schematic cross-sectional view of the manufacturing equipment DM'. Figure 12 A schematic perspective view of a mask support MSS' placed on a mask electrostatic chuck MSE' is shown.

[0116] and Figures 3 to 8 The embodiments illustrated herein are different. Figures 9 to 12 The illustrated embodiments may include a position alignment portion MSE_A' with a different structure, and may define a guide hole MSS_H. In the following description, descriptions that overlap with the foregoing details will be omitted, and the focus will be on the differences.

[0117] refer to Figure 9In one embodiment, a mask support MSS' may define a guide hole MSS_H therein. The guide hole MSS_H may be formed through a support frame MSS_FR of the mask support MSS'. The guide hole MSS_H may be positioned close to (or adjacent to) the edge of the support frame MSS_FR.

[0118] The guide hole MSS_H may correspond to an opening different from the support opening MSS_OPN. In one embodiment, although both the support opening MSS_OPN and the guide hole MSS_H are openings defined through the support frame MSS_FR, the difference between the support opening MSS_OPN and the guide hole MSS_H is that, for example, the deposited material may pass through the support opening MSS_OPN but may not pass through the guide hole MSS_H.

[0119] In a plan view, the guide hole MSS_H can have various shapes. In one embodiment, for example, in a plan view, the guide hole MSS_H can have at least one shape selected from circles, ellipses, and polygons.

[0120] In one embodiment, the guide hole MSS_H may be provided as a plurality of holes. In one embodiment, for example, the guide hole MSS_H may include a first guide hole MSS_H1 and a second guide hole MSS_H2. The first guide hole MSS_H1 and the second guide hole MSS_H2 may be spaced apart from each other and positioned close to (or adjacent to) the edge of the support frame MSS_FR. The distance between the first guide hole MSS_H1 and the edge of the support frame MSS_FR and the distance between the second guide hole MSS_H2 and the edge of the support frame MSS_FR may be the same or different. In one embodiment, for example, the first guide hole MSS_H1 and the second guide hole MSS_H2 may be located on the same circumference or on different circumferences.

[0121] The first guide hole MSS_H1 and the second guide hole MSS_H2 may have the same shape. In one embodiment, for example, in a plan view, the first guide hole MSS_H1 and the second guide hole MSS_H2 may have the same shape and the same surface area. In one embodiment, the first guide hole MSS_H1 and the second guide hole MSS_H2 may have different shapes. In one embodiment, for example, the size of the second guide hole MSS_H2 may be larger than the size of the first guide hole MSS_H1. In a plan view, the first guide hole MSS_H1 and the second guide hole MSS_H2 may have different surface areas. In one embodiment, in a plan view, the second guide hole MSS_H2 may have an area larger than that of the first guide hole MSS_H1.

[0122] although Figure 9An embodiment is illustrated with two guide holes MSS_H, but this disclosure is not limited thereto. In one embodiment, for example, the guide holes MSS_H may be provided as a single hole or as three or more holes. In one embodiment, when the guide holes MSS_H are provided as multiple holes, the mask support MSS' may be more stably mounted on the mask electrostatic chuck MSE'.

[0123] refer to Figure 10 The alignment portion MSE_A' may include the protrusion MSE_P and the pin MSE_G.

[0124] The protrusion MSE_P may be connected to and protrude from the placement portion MSE_S. In one embodiment, for example, the protrusion MSE_P may be integral with the placement portion MSE_S and may protrude in a direction away from the side surface of the placement portion MSE_S (e.g., in an inward direction).

[0125] The protrusion MSE_P may define a protruding hole MSE_PH therein, the protruding hole MSE_PH passing through at least a portion of the protrusion MSE_P on the third direction DR3. The protruding hole MSE_PH may pass completely through the protrusion MSE_P, or it may pass only through a portion of the protrusion MSE_P.

[0126] Pin MSE_G can be inserted into protruding hole MSE_PH. In one embodiment, for example, pin MSE_G can be inserted into protruding hole MSE_PH and secured to protrusion MSE_P by various methods such as pressure fit or threaded connection. Pin MSE_G inserted into protruding hole MSE_PH can protrude from the upper surface of protrusion MSE_P.

[0127] In the cross-sectional view, pin MSE_G may have a quadrilateral shape, such as a rectangular shape with a constant width, or a trapezoidal shape with a width that increases from the top to the bottom. In one embodiment, for example, in the cross-sectional view, pin MSE_G may have a shape with a constant width in the third direction DR3, or may have a trapezoidal shape (or a conical shape) with a width that increases in the direction opposite to the third direction DR3.

[0128] refer to Figure 11 and Figure 12 The portion of pin MSE_G protruding from the upper surface of protrusion MSE_P can be inserted into guide hole MSS_H. To achieve the aforementioned purpose, the width of guide hole MSS_H can be equal to the width of pin MSE_G. In one embodiment, the width of guide hole MSS_H can be greater than the width of pin MSE_G, provided that the mask support MSS' does not rotate (or move excessively) after pin MSE_G is inserted into guide hole MSS_H.

[0129] In one embodiment, the first guide hole MSS_H1 and the pin MSE_G may have the same shape and the same surface area in a plan view. In another embodiment, the second guide hole MSS_H2 may have the same shape as the pin MSE_G in a plan view, and may have a larger surface area than the pin MSE_G. However, this disclosure is not limited to the foregoing embodiments. In one embodiment, when the guide hole MSS_H has the same shape as the pin MSE_G and has a larger surface area than the pin MSE_G, the pin MSE_G can be more easily inserted into the guide hole MSS_H.

[0130] The guide hole MSS_H guides the mask support MSS' to the correct position on the mask electrostatic chuck MSE'. In one embodiment, for example, the guide hole MSS_H can be provided in a number corresponding to the number of pins MSE_G of the alignment portion MSE_A'. The mask support MSS' can be rotated until the pins MSE_G are positioned where they can be inserted into the guide hole MSS_H. When the pins MSE_G are positioned to correspond to the guide hole MSS_H, the mask support MSS' can stop rotating to allow the pins MSE_G to be inserted into the guide hole MSS_H.

[0131] In one embodiment, the manufacturing apparatus DM' may include a positioning alignment portion MSE_A', thereby allowing a mask support MSS' to be placed on a mask electrostatic chuck MSE' without being bonded to the mask electrostatic chuck MSE' and the mask MS by means of welding or the like. Furthermore, the mask support MSS' may be automatically replaceable.

[0132] Figure 13 An embodiment of an apparatus DM'' for manufacturing a display device is illustrated.

[0133] Figure 13 Here is a schematic cross-sectional view of the manufacturing equipment DM''.

[0134] and Figures 3 to 8 The embodiments illustrated herein are different. Figure 13 The illustrated embodiments may include a substrate electrostatic chuck moving component S_MP capable of moving the substrate electrostatic chuck ESC. In the following description, descriptions that repeat the foregoing details will be omitted, and the following description will focus on the differences.

[0135] The substrate electrostatic chuck moving component S_MP can be positioned close to (or adjacent to) the substrate electrostatic chuck ESC. In one embodiment, for example, the substrate electrostatic chuck moving component S_MP can be positioned above or below the substrate electrostatic chuck ESC.

[0136] The substrate electrostatic chuck moving component S_MP can move the substrate electrostatic chuck ESC. In one embodiment, for example, the substrate electrostatic chuck moving component S_MP can move the substrate electrostatic chuck ESC in a vertical direction (e.g., a third direction DR3). However, this disclosure is not limited to the above example. In one embodiment, the substrate electrostatic chuck moving component S_MP can move the substrate electrostatic chuck ESC in a horizontal direction (e.g., in a first direction DR1 and a second direction DR2).

[0137] The substrate electrostatic chuck moving component S_MP can move the substrate electrostatic chuck ESC to change its shape. In one embodiment, for example, the substrate electrostatic chuck moving component S_MP can move the substrate electrostatic chuck ESC to change its shape, causing the upper surface of the substrate electrostatic chuck ESC to bend. The substrate electrostatic chuck moving component S_MP can move the substrate electrostatic chuck ESC to change the shape of the substrate SUB fixed to the substrate electrostatic chuck ESC. In one embodiment, for example, the substrate electrostatic chuck moving component S_MP can move the substrate electrostatic chuck ESC while simultaneously moving the substrate SUB, thereby changing the shape of the substrate SUB, causing the upper surface of the substrate SUB to bend.

[0138] In one embodiment, a plurality of substrate electrostatic chuck moving components S_MP may be provided. Compared to the remaining substrate electrostatic chuck moving components S_MP, at least some of the substrate electrostatic chuck moving components S_MP may move the substrate electrostatic chuck ESC in different directions in various regions, thereby changing the shape of the substrate electrostatic chuck ESC. However, this disclosure is not limited to the foregoing embodiments. In one embodiment, the substrate electrostatic chuck moving component S_MP may be provided as a single unit and configured such that the substrate electrostatic chuck ESC moves in different directions in various regions.

[0139] In one embodiment, the substrate electrostatic chuck moving component S_MP may include a piezoelectric actuator, but this disclosure is not limited thereto. In one embodiment, for example, the substrate electrostatic chuck moving component S_MP may include various configurations capable of moving the substrate electrostatic chuck ESC.

[0140] Figure 13 The illustrated embodiment may not include the aforementioned mask support MSS. Accordingly, the mask MS is flexible. Figure 13 The illustrated embodiments may include a substrate electrostatic chuck moving member S_MP, thereby enabling the shape of the substrate SUB to bend to correspond to the degree of bending of the mask MS. In one embodiment, for example, the substrate SUB is bendable such that the cross-sectional shape of the lower surface of the substrate SUB is substantially the same as the cross-sectional shape of the upper surface of the mask MS. Figure 13In the illustrated embodiment, the substrate SUB can be bent to correspond to the shape of the mask MS, thereby minimizing the gap between the mask MS and the substrate SUB and improving the parallelism between the upper surface of the mask MS and the lower surface of the substrate SUB.

[0141] Figure 13 The illustrated embodiments may further include a pressure sensor. The pressure sensor may be positioned close to (or adjacent to) the substrate electrostatic chuck (ESC). In one embodiment, for example, the pressure sensor may be placed on the upper or lower surface of the substrate ESC. The pressure sensor can measure the pressure applied to the substrate ESC or the substrate SUB. In one embodiment, the pressure sensor may be provided as a single unit or multiple units.

[0142] Figure 13 The illustrated embodiments may further include a distance sensor. The distance sensor may be positioned close to (or adjacent to) the mask MS. In one embodiment, for example, the distance sensor may be positioned between the mask MS and the substrate SUB. The distance sensor can measure the distance between the substrate SUB and the mask MS. In one embodiment, the distance sensor may be provided as a single unit or multiple units.

[0143] Figure 14 and Figure 15 An example of an embodiment (e.g., the fourth embodiment) is shown: an apparatus DM''' for manufacturing a display device.

[0144] Figure 14 Here is a schematic cross-sectional view illustrating one embodiment of the manufacturing equipment DM'''. Figure 15 Here is a schematic plan view illustrating one embodiment of a mask electrostatic chuck (MSE).

[0145] and Figures 3 to 8 The embodiments illustrated herein are different. Figure 14 and Figure 15 The illustrated embodiments may include a mask electrostatic chuck moving component M_MP capable of moving the mask electrostatic chuck MSE. In the following description, descriptions that repeat the foregoing details will be omitted, and the focus will be on the differences.

[0146] refer to Figure 14 The mask electrostatic chuck moving component M_MP can move the mask electrostatic chuck MSE. In one embodiment, for example, the mask electrostatic chuck moving component M_MP can move the mask electrostatic chuck MSE in a left-right direction (e.g., a first direction DR1 and a second direction DR2).

[0147] refer to Figure 15The mask electrostatic chuck (MSE) can be provided as multiple units. In one embodiment, for example, the mask electrostatic chuck MSE may include a first mask electrostatic chuck MSE1, a second mask electrostatic chuck MSE2, a third mask electrostatic chuck MSE3, and a fourth mask electrostatic chuck MSE4. The first mask electrostatic chuck MSE1, the second mask electrostatic chuck MSE2, the third mask electrostatic chuck MSE3, and the fourth mask electrostatic chuck MSE4 may be arranged in a clockwise direction. In one embodiment, the first mask electrostatic chuck MSE1, the second mask electrostatic chuck MSE2, the third mask electrostatic chuck MSE3, and the fourth mask electrostatic chuck MSE4 may be spaced apart from each other.

[0148] although Figure 15 An embodiment providing four mask electrostatic chucks (MSEs) is illustrated, but this disclosure is not limited thereto. In one embodiment, for example, the mask electrostatic chucks (MSEs) may be provided as two or more units.

[0149] In one embodiment, a number of mask electrostatic chuck moving parts M_MPs corresponding to the number of mask electrostatic chucks (MSEs) may be provided. Each of the mask electrostatic chuck moving parts M_MPs may be disposed above or below the corresponding mask electrostatic chuck MSE to move the mask electrostatic chuck MSE.

[0150] The mask electrostatic chuck moving component M_MP can move the individual mask electrostatic chucks MSE to change the distance between the first mask electrostatic chuck MSE1, the second mask electrostatic chuck MSE2, the third mask electrostatic chuck MSE3, and the fourth mask electrostatic chuck MSE4. In one embodiment, for example, the mask electrostatic chuck moving component M_MP can move the individual mask electrostatic chucks MSE such that each of the first mask electrostatic chucks MSE1, the second mask electrostatic chuck MSE2, the third mask electrostatic chuck MSE3, and the fourth mask electrostatic chuck MSE4 moves away from or closer to the center of the mask MS. In another embodiment, for example, the mask electrostatic chuck moving component M_MP can move the individual mask electrostatic chucks MSE such that the first mask electrostatic chucks MSE1, the second mask electrostatic chucks MSE2, the third mask electrostatic chucks MSE3, and the fourth mask electrostatic chuck MSE4 are spaced further apart from each other or closer together.

[0151] The mask electrostatic chuck moving component M_MP can move the mask electrostatic chuck MSE to change the shape of the mask MS. In one embodiment, for example, the mask electrostatic chuck moving component M_MP can move the mask electrostatic chuck MSE to tension the mask MS. The mask MS can be tensioned when each of the first mask electrostatic chuck MSE1, the second mask electrostatic chuck MSE2, the third mask electrostatic chuck MSE3, and the fourth mask electrostatic chuck MSE4 moves away from the center of the mask MS. The mask electrostatic chuck moving component M_MP can move the mask electrostatic chuck MSE to change the shape of the mask MS, causing the mask MS to bend. The mask MS can bend when each of the first mask electrostatic chuck MSE1, the second mask electrostatic chuck MSE2, the third mask electrostatic chuck MSE3, and the fourth mask electrostatic chuck MSE4 moves towards the center of the mask MS.

[0152] Figure 14 and Figure 15 The illustrated embodiment may not include the aforementioned mask support MSS, but may include a mask electrostatic chuck moving component M_MP that moves the mask electrostatic chuck MSE. Accordingly, the mask MS can be tensioned so that the upper surface of the mask MS can become flat. As a result, the gap between the mask MS and the substrate SUB can be minimized, and the parallelism between the upper surface of the mask MS and the lower surface of the substrate SUB can be improved.

[0153] The following text will refer to Figures 16 to 18 A display device DD is described in one embodiment.

[0154] Figure 16 Here is a plan view of an embodiment of the display device DD. Figure 16 The display device DD in the above description may be a display device DD manufactured using the aforementioned manufacturing equipment DM, DM', DM'' or DM'''.

[0155] refer to Figure 16 The display device DD (or display panel) may include a display area DA and a non-display area NDA. The display device DD can display images through the display area DA. The non-display area NDA may be formed around the display area DA.

[0156] The display device DD may include a substrate layer (BSL), subpixels (SP), and / or pads (PD).

[0157] Subpixels SP can be arranged in the display area DA on the substrate layer BSL. Subpixels SP can be arranged in a matrix form on a first direction DR1 and a second direction DR2 intersecting the first direction DR1. However, this disclosure is not limited to the foregoing embodiments. In one embodiment, for example, subpixels SP can be arranged in a zigzag pattern on the first direction DR1 and the second direction DR2. In another embodiment, for example, subpixels SP can be arranged in a cellular form. The first direction DR1 can indicate a row direction, and the second direction DR2 can indicate a column direction. Two or more subpixels in subpixels SP can form a single pixel PXL.

[0158] Components for controlling sub-pixels SP can be disposed in the non-display area NDA on the base layer BSL. In one embodiment, for example, wiring such as gate lines and data lines connected to the sub-pixel SP can be disposed in the non-display area NDA.

[0159] The pad PD can be disposed in the non-display area NDA on the substrate layer BSL. The pad PD can be electrically connected to the sub-pixel SP via wiring. In one embodiment, for example, the pad PD can be connected to the sub-pixel SP via a data line.

[0160] The voltages and signals required for the operation of the components included in the display device DD can be provided from the driver integrated circuit via pad PD. In one embodiment, for example, a data line can be connected to the driver integrated circuit via pad PD. In another embodiment, for example, a power supply voltage can be received from the driver integrated circuit via pad PD.

[0161] In one embodiment, the circuit board can be electrically connected to the pad PD via a conductive adhesive component such as an anisotropic conductive film. The circuit board can be a flexible circuit board or a flexible film, comprising or being made of flexible materials. A driver integrated circuit can be disposed (e.g., mounted) on the circuit board and electrically connected to the pad PD.

[0162] In one embodiment, the display area DA can have various shapes. The display area DA can have a closed annular shape, including linear and / or curved edges. In one embodiment, for example, the display area DA can have shapes such as polygons, circles, semicircles, and ellipses.

[0163] In one embodiment, the display device DD may include a planar display surface. In one embodiment, the display device DD may include a display surface that is at least partially rounded. In one embodiment, the display device DD may be flexible, foldable, or rollable. In the foregoing embodiments, the display device DD and / or the substrate layer BSL may include a material with flexible properties.

[0164] Figure 17 The diagram shows a plan view of one embodiment of a sub-pixel.

[0165] refer to Figure 17 Pixel PXL may include first sub-pixels SP1 to third sub-pixels SP3 arranged along the first direction DR1.

[0166] The first sub-pixel SP1 may include a first emission area EMA1 and a non-emission area NEA formed around the first emission area EMA1. The second sub-pixel SP2 may include a second emission area EMA2 and a non-emission area NEA formed around the second emission area EMA2. The third sub-pixel SP3 may include a third emission area EMA3 and a non-emission area NEA formed around the third emission area EMA3.

[0167] The first emission region EMA1 can be the first emission layer EML1 from the first sub-pixel SP1 (see reference). Figure 18 The second emission region EMA2 can be the region emitting light from the second emission layer EML2 of the second sub-pixel SP2 (reference). Figure 18 The third emission region EMA3 can be the third emission layer EML3 (reference) emitting light from the third sub-pixel SP3. Figure 18 The region that emits light.

[0168] Figure 18 For along Figure 17 The cross-sectional view taken from line I-I'.

[0169] refer to Figure 18 The first sub-pixel SP1 to the third sub-pixel SP3 may each include emission areas EMA1, EMA2, and EMA3. The non-emission area NEA may be located between the emission areas EMA1, EMA2, and EMA3 of the first sub-pixel SP1 to the third sub-pixel SP3.

[0170] Each of the first sub-pixels SP1 to the third sub-pixels SP3 may include a pixel circuit layer PCL, a display element layer DPL, and / or a thin film encapsulation layer TFE, which are stacked sequentially on the substrate layer BSL.

[0171] The substrate layer (BSL) can form a base surface. The substrate layer (BSL) may include a transparent insulating material to allow light transmission. The substrate layer (BSL) may be a rigid substrate or a flexible substrate. In one embodiment, for example, the rigid substrate may be one of a glass substrate (e.g., a crystalline glass substrate), a quartz substrate, and a glass-ceramic substrate. The flexible substrate may be a film substrate or a plastic substrate comprising a polymeric organic material. In one embodiment, for example, the flexible substrate (SUB) may include at least one of the following: polystyrene, polyvinyl alcohol, polymethyl methacrylate, polyethersulfone, polyacrylate, polyetherimide, polyethylene naphthalate, polyethylene terephthalate, polyphenylene sulfide, polyarylate, polyimide, polycarbonate, cellulose triacetate, and cellulose acetate propionate, but this disclosure is not limited thereto. In one embodiment, for example, the substrate layer (BSL) may be a substrate comprising silicon. In one embodiment, the display device (DD) may be an organic light-emitting diode on silicon (“OLED”) (“OLEDoS”) display device, which includes a display panel formed on a silicon substrate.

[0172] The pixel circuit layer PCL may include a buffer layer BFL, a gate insulating layer GI, an interlayer dielectric ILD, a passivation layer PSV, and / or a via layer VIA, which are sequentially stacked on the substrate layer BSL on the third-direction DR3.

[0173] The buffer layer BFL can be an inorganic insulating layer comprising inorganic materials. The buffer layer BFL may include silicon nitride (SiN). x ), silicon dioxide (SiO) x ), silicon oxynitride (SiO) x N y ) and such as aluminum oxide (AlO) x At least one of the metal oxides of the substrate layer (BSL). The buffer layer BFL may be provided as a single layer or as a multilayer structure having two or more layers. When the buffer layer BFL is provided as a multilayer structure, the individual layers may comprise the same material or different materials from each other, or be composed of the same material. Depending on the material of the substrate layer (BSL), processing conditions, etc., the buffer layer BFL may be omitted.

[0174] Transistor T may be placed on buffer layer BFL. Transistor T may include active pattern ACT, gate electrode GE, first transistor electrode TE1 and / or second transistor electrode TE2.

[0175] An active pattern ACT may be placed on a buffer layer BFL. The active pattern ACT may include a polysilicon semiconductor. In one embodiment, for example, the active pattern ACT may be formed using a low-temperature polysilicon process. However, this disclosure is not limited to the foregoing embodiments, and the active pattern ACT may include or be composed of oxide semiconductors (e.g., metal oxide semiconductors).

[0176] The active pattern ACT may include a channel region, a first contact region extending to a first end of the channel region, and a second contact region extending to a second end of the channel region. The channel region, the first contact region, and the second contact region may each include an undoped semiconductor layer or a doped semiconductor layer. In one embodiment, for example, each of the first and second contact regions may include a doped semiconductor layer, and the channel region may include an undoped semiconductor layer. In one embodiment, for example, an n-type impurity may be used as the impurity, but this disclosure is not limited thereto. One of the first and second contact regions may be a source region, and the remaining (or the other) region may be a drain region.

[0177] The gate insulating layer GI can be placed on the active pattern ACT. The gate insulating layer GI may include an inorganic layer (or an inorganic insulating layer) comprising inorganic materials. In one embodiment, for example, the gate insulating layer GI may include silicon nitride (SiN). x ), silicon dioxide (SiO) x ), silicon oxynitride (SiO) x N y ) and such as aluminum oxide (AlO) x At least one of the metal oxides of the aforementioned metals. However, the material of the gate insulating layer GI is not limited to the foregoing embodiments. In one embodiment, the gate insulating layer GI may include an organic layer comprising an organic material (e.g., an organic insulating layer). The gate insulating layer GI may be provided as a single layer or as a multilayer structure having two or more layers. The gate electrode GE may be placed on the gate insulating layer GI. The gate electrode GE may be placed over the channel region of the active pattern ACT. The gate electrode GE may have a single-layer structure comprising or composed of one or more of the following groups: copper (Cu), molybdenum (Mo), tungsten (W), titanium (Ti), aluminum (Al), silver (Ag) and any alloy thereof (e.g., aluminum neodymium (AlNd)) or composed of the following, or the gate electrode GE may have a double-layer or multilayer structure comprising molybdenum (Mo), titanium (Ti), copper (Cu), aluminum (Al), or silver (Ag) to reduce wiring resistance.

[0178] The interlayer dielectric (ILD) may be placed on the gate electrode GE. The interlayer dielectric (ILD) and the gate insulating layer GI may comprise the same material. The interlayer dielectric (ILD) may comprise one or more materials selected from those exemplified as the constituent materials of the gate insulating layer GI.

[0179] The first transistor electrode TE1 and the second transistor electrode TE2 can be placed on the interlayer dielectric ILD. The first transistor electrode TE1 of transistor T can extend through a contact hole penetrating the interlayer dielectric ILD and the gate insulating layer GI to the first contact region of the active pattern ACT. When the first contact region is the source region, the first transistor electrode TE1 can be the first source electrode.

[0180] The second transistor electrode TE2 of transistor T can extend through a contact hole penetrating the interlayer dielectric ILD and the gate insulating layer GI to the second contact region at the second end of the active pattern ACT. If the second contact region is a drain region, the second transistor electrode TE2 can be the second drain electrode.

[0181] Each of the first transistor electrode TE1 and the second transistor electrode TE2 may include the same material as the gate electrode GE, or may include one or more materials selected from the constituent materials of the gate electrode GE, for example.

[0182] The passivation layer PSV can be placed on the first transistor electrode TE1 and the second transistor electrode TE2. The passivation layer (e.g., a protective layer) PSV may comprise an inorganic layer (or inorganic insulating layer) containing inorganic materials or an organic layer (or organic insulating layer) containing organic materials, or be composed of the latter. The inorganic layer may include, for example, silicon oxide (SiO2). x Silicon nitride (SiN) x ), silicon oxynitride (SiO) x N y ) and such as aluminum oxide (AlO) x The organic layer may include at least one of the following metal oxides: polyacrylate resin, epoxy resin, phenolic resin, polyamide resin, polyimide resin, unsaturated polyester resin, polyphenylene ether resin, polyphenylene sulfide resin, and benzocyclobutene resin.

[0183] In one embodiment, the passivation layer PSV and the interlayer dielectric ILD may have the same material, but this disclosure is not limited thereto. The passivation layer PSV may be provided as a single layer or as a multilayer structure having two or more layers.

[0184] The via layer VIA may be placed on the passivation layer PSV. The via layer VIA and the passivation layer PSV may comprise the same material. The via layer VIA may comprise one or more materials selected from those exemplified as constituent materials of the passivation layer PSV. In one embodiment, the via layer VIA may comprise an organic layer comprising or composed of an organic material.

[0185] The display element layer (DPL) can be placed on the pixel circuit layer (PCL). The display element layer (DPL) may include light-emitting elements (LDs) configured to emit light. The first sub-pixel SP1 to the third sub-pixel SP3 may each include a first light-emitting element LD1 to a third light-emitting element LD3.

[0186] The first light-emitting element LD1 may include an anode electrode AE, a first emitting layer EML1, and a cathode electrode CE. The second light-emitting element LD2 may include an anode electrode AE, a second emitting layer EML2, and a cathode electrode CE. The third light-emitting element LD3 may include an anode electrode AE, a third emitting layer EML3, and a cathode electrode CE. In one embodiment, for example, each of the first light-emitting elements LD1 to the third light-emitting element LD3 may be a top-emitting organic light-emitting element.

[0187] The anode electrodes AE of the first sub-pixel SP1, the second sub-pixel SP2, and the third sub-pixel SP3 can be disposed in the corresponding emitter regions EMA1, EMA2, and EMA3, and can be spaced apart from each other. The anode electrode AE ​​of each sub-pixel SP can be electrically connected to the first transistor electrode TE1 of the transistor T of the corresponding sub-pixel SP through the corresponding contact hole of the through-hole layer VIA and the passivation layer PSV.

[0188] A barrier PDL can be placed on the anode electrode AE. The barrier PDL can define (or separate) the individual emitter regions EMA1, EMA2, and EMA3 of the sub-pixel SP. The barrier PDL can define openings that partially expose the individual anode electrodes AE of the sub-pixel SP.

[0189] The embankment PDL may include an organic insulating layer comprising or made of organic materials. Organic materials may include acrylic resins, epoxy resins, phenolic resins, polyamide resins, polyimide resins, etc. This disclosure is not limited to the foregoing embodiments, and the embankment PDL may also include an inorganic insulating layer comprising or made of inorganic materials.

[0190] In one embodiment, the barrier PDL may include a light-absorbing material or be coated with a light-absorbing agent, thereby absorbing light introduced from the outside. In one embodiment, for example, the barrier PDL may include a carbon-based black pigment. This disclosure is not limited to the foregoing embodiments. The barrier PDL may include an opaque metal with a relatively high light absorption rate, such as chromium (Cr), molybdenum (Mo), an alloy of molybdenum (Mo) and titanium (Ti) (MoTi), tungsten (W), vanadium (V), niobium (Nb), tantalum (Ta), manganese (Mn), cobalt (Co), or nickel (Ni).

[0191] The emitter layer EML of each sub-pixel SP can be placed on the corresponding anode electrode AE ​​exposed from the dam PDL. The cathode electrode CE can be placed on the emitter layer EML. The cathode electrode CE can extend across all the first sub-pixels SP1 to the third sub-pixels SP3. In one embodiment, for example, the cathode electrode CE can be provided as a common electrode, but this disclosure is not limited thereto.

[0192] The cathode electrode CE may include or be composed of a metal layer and / or a transparent conductive layer. The metal layer may include or be composed of materials such as silver (Ag), magnesium (Mg), aluminum (Al), platinum (Pt), palladium (Pd), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), or any alloy thereof. The transparent conductive layer may include or be composed of materials such as indium tin oxide (“ITO”), indium zinc oxide (“IZO”), zinc oxide (ZnO), or indium tin zinc oxide (“ITZO”). In one embodiment, the cathode electrode CE may include a multilayer structure having two or more layers including thin metal layers. In one embodiment, for example, the cathode electrode CE may include a three-layer structure of ITO / Ag / ITO.

[0193] A thin-film encapsulation layer (TFE) may be placed on the display element layer (DPL). The TFE may have a single-layer or multi-layer structure. The TFE may include an insulating layer covering the light-emitting element (LD). The TFE may include at least one inorganic layer and at least one organic layer. In one embodiment, for example, the TFE may have a structure formed by alternately stacking inorganic and organic layers. In one embodiment, for example, the TFE may include a first inorganic layer, an organic layer disposed on the first inorganic layer, and a second inorganic layer disposed on the organic layer.

[0194] The sensing layer TS can be placed on the thin-film encapsulation layer TFE. The sensing layer TS may include a first insulating layer INS1, a first conductive layer MT1, a second insulating layer INS2, a second conductive layer MT2, and a third insulating layer INS3.

[0195] The first insulating layer INS1 may be placed on the thin-film encapsulation layer TFE. The first insulating layer INS1 may include an inorganic insulating layer comprising inorganic materials. The inorganic insulating layer may include inorganic insulating materials such as silicon oxide (SiO2). x Silicon nitride (SiN) x ), silicon oxynitride (SiO) x N y ), aluminum oxide (Al) x O y Titanium oxide (TiO) x ), tantalum oxide (Ta x O y ), hafnium oxide (HfO) x ) or zinc oxide (ZnO) x In one embodiment, the first insulating layer INS1 may be omitted, or it may be configured as the top layer of the thin-film encapsulation layer TFE.

[0196] The first conductive layer MT1 may be placed on the first insulating layer INS1. The first conductive layer MT1 may be partially open to prevent overlap with the respective light-emitting elements LD of the sub-pixel SP. In one embodiment, for example, the first conductive layer MT1 may be placed on the non-emitting region NEA surrounding the emitting regions EMA1, EMA2, and EMA3.

[0197] The first conductive layer MT1 may include a metal layer or a transparent conductive layer. In one embodiment, for example, the metal layer may include molybdenum, titanium, copper, aluminum, or any alloy thereof. The transparent conductive layer may include, but is not limited to, at least one of ITO, IZO, zinc oxide (ZnO), ITZO, poly(3,4-ethylenedioxythiophene) (“PEDOT”), and metal nanowires. The first conductive layer MT1 may form a connection electrode for connecting to the sensing electrode.

[0198] The second insulating layer INS2 may be placed on the first conductive layer MT1. The second insulating layer INS2 and the first insulating layer INS1 may comprise the same material. The second insulating layer INS2 may comprise one or more materials selected from the materials exemplified as the constituent materials of the first insulating layer INS1.

[0199] The second conductive layer MT2 may be placed on the second insulating layer INS2. The second conductive layer MT2 may be partially open to prevent overlap with the individual light-emitting elements LD of the sub-pixel SP. In one embodiment, for example, the second conductive layer MT2 may be placed on the non-emitting region NEA surrounding the emitting regions EMA1, EMA2, and EMA3.

[0200] The second conductive layer MT2 and the first conductive layer MT1 may comprise the same material. The second conductive layer MT2 may comprise one or more materials selected from the materials constituting the first conductive layer MT1, as exemplified.

[0201] The second conductive layer MT2 can be electrically connected to the first conductive layer MT1 through a contact hole penetrating the second insulating layer INS2. The second conductive layer MT2 can form a sensing electrode.

[0202] The third insulating layer INS3 may be placed on the second conductive layer MT2. The third insulating layer INS3 may include an organic insulating layer containing organic materials. However, this disclosure is not limited to the foregoing embodiments. In one embodiment, the third insulating layer INS3 may include an inorganic layer, or may have a structure in which organic and inorganic layers are alternately stacked.

[0203] The light-blocking layer LBP can be placed on the display element layer DPL, the thin-film encapsulation layer TFE, and / or the sensing layer TS. The light-blocking layer LBP can define an opening formed on the light-emitting element LD. In one embodiment, for example, the light-blocking layer LBP can be placed on the non-emissive region NEA surrounding the emitting regions EMA1, EMA2, and EMA3.

[0204] The light-blocking layer (LBP) may include a light-blocking material to prevent light leakage and color mixing defects. In one embodiment, for example, the light-blocking layer (LBP) may include a black matrix, but is not limited thereto. In one embodiment, the light-blocking layer (LBP) may include carbon black (“CB”) and / or titanium black (“TiBK”).

[0205] A color filter layer (CFL) can be placed on the light-blocking layer (LBP). The color filter layer (CFL) may include color filters CF1 to CF3 corresponding to the individual colors of sub-pixels SP. Because color filters CF1 to CF3 corresponding to the individual colors of the first sub-pixels SP1 to the third sub-pixels SP3 are arranged, a full-color image can be displayed.

[0206] The color filter layer CFL may include: a first color filter CF1, which provides selective transmission of light emitted from the first sub-pixel SP1 in the first sub-pixel SP1; a second color filter CF2, which provides selective transmission of light emitted from the second sub-pixel SP2 in the second sub-pixel SP2; and a third color filter CF3, which provides selective transmission of light emitted from the third sub-pixel SP3 in the third sub-pixel SP3.

[0207] In one embodiment, the first color filter CF1, the second color filter CF2, and the third color filter CF3 may be a red color filter, a green color filter, and a blue color filter, respectively, but this disclosure is not limited thereto.

[0208] The first color filter CF1 may include a color filter material that selectively transmits light of a first color (or red). In one embodiment, for example, if the first sub-pixel SP1 is a red sub-pixel, the first color filter CF1 may include a red color filter material.

[0209] The second color filter CF2 may include a color filter material that selectively transmits light of a second color (or green). In one embodiment, for example, if the second sub-pixel SP2 is a green sub-pixel, the second color filter CF2 may include a green color filter material.

[0210] The third color filter CF3 may include a color filter material that selectively transmits light of a third color (or blue). In one embodiment, for example, if the third sub-pixel SP3 is a blue sub-pixel, the third color filter CF3 may include a blue color filter material.

[0211] An outer coating OC can be provided on the color filter layer CFL. The outer coating OC may include various materials suitable for protecting the underlying layers from foreign substances such as dust and water. In one embodiment, for example, the outer coating OC may include at least one of an inorganic insulating layer and an organic insulating layer. In one embodiment, for example, the outer coating OC may include an epoxy resin, but this disclosure is not limited thereto.

[0212] The following text will refer to Figure 19 Describes a method for manufacturing a display device DD.

[0213] Figure 19 The flowchart illustrates an embodiment of a method for manufacturing a display device DD. The method for manufacturing a display device DD according to this disclosure can be a method for manufacturing a display device DD using the aforementioned manufacturing equipment DM, DM', DM'', or DM'''.

[0214] refer to Figure 19 The method for manufacturing a display device DD may include an operation S100 of forming a pixel circuit layer PCL on a substrate SUB, an operation S200 of forming a light-emitting element LD on the pixel circuit layer PCL, and an operation S300 of forming a thin film encapsulation layer TFE on the light-emitting element LD.

[0215] refer to Figure 19 as well as Figure 18 In the operation S100 of forming a pixel circuit layer PCL on a substrate SUB, circuit elements can be patterned on the substrate SUB (which may correspond to the base layer BSL), and a pixel circuit layer PCL can be provided.

[0216] In one embodiment, the conductive layer, insulating layer, etc., on the substrate SUB can be formed based on general processes used for manufacturing semiconductor devices. In one embodiment, for example, the conductive layer or insulating layer on the substrate SUB can be formed by a photolithography process, can be etched by various methods (e.g., wet etching, dry etching, etc.), and can be deposited by various methods (e.g., sputtering, chemical vapor deposition, etc.). However, this disclosure is not limited to the predetermined examples.

[0217] In the operation S100 of forming a pixel circuit layer PCL on the substrate SUB, transistors T can be patterned on the substrate SUB.

[0218] In the operation S200 of forming a light-emitting element LD on the pixel circuit layer PCL, an anode electrode AE, an emission layer EML1 to EML3 and a cathode electrode CE can be provided to form a first light-emitting element LD1 to a third light-emitting element LD3.

[0219] In the operation S200 of forming a light-emitting element LD on the pixel circuit layer PCL, the anode electrode AE ​​can be patterned, and the barrier PDL overlapping the anode electrode AE ​​can be patterned.

[0220] Subsequently, the step of depositing the first emitter layers EML1 to the third emitter layers EML3 on the anode electrode AE ​​can be performed. The first emitter layers EML1 to the third emitter layers EML3 can be deposited using the aforementioned manufacturing equipment DM, DM', DM'', or DM'''. In one embodiment, for example, the material used to form the first emitter layers EML1 to the third emitter layers EML3 can be applied to the anode electrode AE ​​using a mask MS. To achieve the aforementioned purpose, the pattern of the mask MS can correspond to the pattern of the first emitter layers EML1 to the third emitter layers EML3. Subsequently, the cathode electrode CE can be formed on the first emitter layers EML1 to the third emitter layers EML3.

[0221] In operation S300, which forms a thin-film encapsulation layer TFE on a light-emitting element LD, the thin-film encapsulation layer TFE can be formed on light-emitting elements LD1 to LD3. The layer provided under the thin-film encapsulation layer TFE can be passivated.

[0222] Subsequently, in one embodiment, a sensing layer TS, a light-blocking layer LBP, and a color filter layer CFL may be formed, thereby providing a display device DD.

[0223] The following text will refer to Figures 20 to 22 The description includes an electronic device 1000 comprising a display device DD manufactured according to the aforementioned manufacturing method.

[0224] Figure 20 For example, including Figure 16 A block diagram of an embodiment of an electronic device 1000 for a display device DD. Figure 21 For example, it can be used Figure 20 A perspective view of an embodiment of a smartphone 2000 implemented by an electronic device 1000. Figure 22 For example, it can be used Figure 20 A perspective view of an embodiment of a tablet computer 3000 implemented by an electronic device 1000.

[0225] refer to Figure 20 The electronic device 1000 may include a processor 1010, a memory device 1020, a storage device 1030, an input / output (“I / O”) device 1040, a power supply 1050, and a display device DD.

[0226] In one embodiment, such as Figure 21 As illustrated, the electronic device 1000 can be implemented as a smartphone 2000. In one embodiment, such as Figure 22As illustrated, electronic device 1000 may be implemented as tablet computer 3000. However, the foregoing embodiments are illustrative, and electronic device 1000 is not limited to the foregoing embodiments. In one embodiment, for example, electronic device 1000 may include an electronic device (or computing system) including the aforementioned display device DD, such as a digital television (“TV”), a three-dimensional (3D) television, a personal computer (“PC”) (e.g., a laptop computer), a home appliance, a mobile phone, a video phone, a smart tablet, a smartwatch, a head-mounted display device, a personal digital assistant (“PDA”), a portable multimedia player (“PMP”), a digital camera, a music player, a portable game console, or a navigation system.

[0227] Processor 1010 can perform various tasks and operations. In one embodiment, processor 1010 may include an application processor, graphics processing unit, microprocessor, central processing unit (“CPU”), etc. Processor 1010 can be connected to other components of electronic device 1000 via a bus system. In one embodiment, the bus system may include a peripheral component interconnect (“PCI”) bus. Processor 1010 can provide a data stream to display device DD for display on display device DD.

[0228] Memory device 1020 may be provided as working memory and / or buffer memory for electronic device 1000 and / or processor 1010. In one embodiment, memory device 1020 may include volatile memory devices such as dynamic random access memory (“DRAM”), static random access memory (“SRAM”), and mobile DRAM.

[0229] Storage device 1030 may store data in response to control from processor 1010. Storage device 1030 may include a non-volatile storage medium that retains data even when the power to electronic device 1000 is turned off. In one embodiment, storage device 1030 may include a solid-state drive (“SSD”), hard disk drive (“HDD”), etc.

[0230] I / O device 1040 may include user input devices such as keyboard, keypad, touchpad, touch screen and mouse, as well as output devices such as speakers and printers.

[0231] The power supply 1050 provides the electrical power required to operate the electronic device 1000. In one embodiment, for example, the power supply 1050 may be a power management integrated circuit (“PMIC”). In another embodiment, for example, the power supply 1050 may include a battery.

[0232] The display device DD can display images in response to control from the processor 1010. The display device DD can be connected to other components of the electronic device 1000 via a bus system and / or other communication links. The display device DD can be implemented as... Figure 16 The display device DD can display an image on pixels PXL. In one embodiment, each of the pixels PXL can be as follows: Figure 17 The configuration illustrated in .

[0233] One embodiment of this disclosure provides an apparatus for manufacturing a display device, wherein a mask can be appropriately fixed to minimize the gap between the mask and the substrate and to improve the parallelism between the mask and the substrate.

[0234] One embodiment of this disclosure provides an apparatus for manufacturing a display device, which is capable of automatically replacing a mask support for a mask with another mask support.

[0235] The effects of this disclosure are not limited to the foregoing, and various other effects are anticipated herein.

[0236] Although exemplary embodiments and application examples have been described, it should be noted that other embodiments and modifications can be derived from the provided disclosure. Accordingly, the concepts of this disclosure are not limited to the foregoing embodiments, but are limited to the broader scope of the claims and various apparent modifications and equivalent arrangements.

Claims

1. An apparatus for manufacturing a display device, the apparatus comprising: Mask electrostatic chuck; The mask support is placed on the mask electrostatic chuck; as well as A mask is placed on the mask support, and the mask electrostatic chuck includes: The mask support is mounted on the mounting portion. The contact portion is configured to contact the mask; and The positioning alignment portion is configured to align with the position of the mask support.

2. The device according to claim 1, The mask electrostatic chuck further includes a peripheral portion disposed outside the contact portion, and The height of the peripheral portion is less than the height of the contact portion.

3. The device according to claim 2, wherein the height of the mounting portion is less than the height of the contact portion.

4. The device according to claim 2, The placement portion and the contact portion have different heights from each other, and The difference between the height of the placement portion and the height of the contact portion is equal to or greater than the thickness of the mask support.

5. The apparatus of claim 2, further comprising a conveying component configured to convey at least one of the mask support and the masks, and The conveying component does not contact the surrounding portion.

6. The device according to any one of claims 2 to 5, further comprising: camera, The camera hole passes through the contact portion. The camera corresponds to the camera hole, and The camera is configured to capture an image of the mask.

7. The device according to any one of claims 2 to 5, wherein the position alignment portion includes a groove defined in the peripheral portion.

8. The device according to claim 7, wherein, In the cross-sectional view, the groove has a constant width, or a width that increases from the bottom end of the groove to the top end of the groove.

9. The device according to claim 7, The mask support includes: Supporting framework; as well as A guide element, connected to and protruding from the support frame, and The guide is placed on the alignment portion.

10. The device of claim 9, wherein the guide has a rod shape in a plan view.

11. The device according to claim 9, The mask support further includes an outer guide frame connected to the guide, and The outer guide frame has a ring shape in the plan view.

12. The device according to any one of claims 2 to 5, The position alignment portion includes: The protrusion connects to and protrudes from the mounting portion; as well as pin, The protrusion therein defines a protruding hole through at least a portion of the protrusion. The pin is inserted into the protruding hole, and The pin protrudes from the upper surface of the protrusion.

13. The device according to claim 12, The contact portion is connected to the placement portion, and The peripheral portion is connected to the contact portion.

14. The device according to claim 12, wherein, In the cross-sectional view, the pin has a constant width, or a width that increases from the top of the pin to the bottom of the pin.

15. The device according to claim 12, The guide hole passing through the mask support is defined within the mask support, and The pin is inserted into the guide hole.

16. The device according to claim 15, The guide hole includes a first guide hole and a second guide hole, and in, In the plan view, the second guide hole has a larger area than the first guide hole.

17. An apparatus for manufacturing a display device, the display device comprising a substrate, the apparatus comprising: A substrate electrostatic chuck is placed on the substrate; A mask, the pattern of which is configured to correspond to the pattern of a material formed on the substrate; A mask electrostatic chuck is disposed below the mask; as well as A substrate electrostatic chuck moving component is configured to move the substrate electrostatic chuck, and The substrate electrostatic chuck moving component is configured to move the substrate electrostatic chuck to change the shape of the substrate.

18. The apparatus of claim 17, further comprising: A pressure sensor is configured to measure the pressure applied to the substrate; as well as A distance sensor is configured to measure the distance between the substrate and the mask. The substrate can be bent by the substrate electrostatic chuck moving component.

19. An apparatus for manufacturing a display device, the display device comprising a substrate, the apparatus comprising: A substrate electrostatic chuck is placed on the substrate; A mask, the pattern of which is configured to correspond to the pattern of a material formed on the substrate; A mask electrostatic chuck is disposed below the mask; as well as A mask electrostatic chuck moving component is configured to move the mask electrostatic chuck, and The mask electrostatic chuck moving component is configured to move the mask electrostatic chuck to change the shape of the mask.

20. The device according to claim 19, The mask electrostatic chuck is provided as a plurality of mask electrostatic chucks. The plurality of mask electrostatic chucks are configured to be movable and spaced apart from each other. The mask electrostatic chuck moving component includes a number of mask electrostatic chuck moving components corresponding to the number of the plurality of mask electrostatic chucks, and The mask electrostatic chuck moving component is configured to tension the mask.

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