Preparation method of high-purity indium target material

Abstract

The invention relates to the technical field of indium target material preparation, in particular to a high-purity indium target material preparation method which comprises the following steps: step 1, weighing an indium raw material, placing the indium raw material in a mold cavity, and heating to melt the indium raw material; 2, after the raw material indium is in a molten state, ultrasonic treatment is conducted, and impurities and an oxide layer on the surface of indium metal liquid are scraped away; 3, heating is stopped, demolding is conducted, and an indium target plate blank is obtained; 4, the plate blank is rolled; 5, the rolled plate blank is leveled through a pressing block, and rough machining is conducted; and 6, the rough-machined plate blank and a copper back plate are bonded, finish machining is conducted, and the qualified high-purity indium target material is obtained.By means of the method, the problems that the grain size and texture distribution of the high-purity indium target material are not uniform are solved, the indium target material prepared through the method is higher in purity and density, the grain size of the target material is small (the average grain size is smaller than or equal to 60 micrometers), texture distribution is more uniform, and the quality of the target material is improved. Specific crystal orientation can be formed, the sputtering performance of the indium target material is better, and the utilization rate is higher.

Description

Technical Field

[0001] This invention relates to the field of indium target technology, and more particularly to a method for preparing high-purity indium targets. Background Technology

[0002] Indium is widely used in many advanced fields, such as aerospace, semiconductors, optoelectronics, and industry, due to its excellent ductility, high plasticity, and low vapor pressure, which allows it to form alloys with various metals in any proportion.

[0003] In the indium sputtering process, the existing technology involves melting indium ingots on a heating platform, ultrasonic vibration, and then shaping them with a mold. This method cannot effectively control the grain size, has certain limitations on density, cannot achieve large deformation, and can only produce products with simple shapes.

[0004] Therefore, we propose a method for preparing high-purity indium targets to solve the above problems. Summary of the Invention

[0005] The purpose of this invention is to address the shortcomings of existing technologies by proposing a method for preparing high-purity indium targets.

[0006] A method for preparing a high-purity indium target includes the following steps:

[0007] Step 1: Weigh the indium raw material, place it in the mold cavity, and heat it to melt it;

[0008] Step 2: After the raw material indium is in a molten state, ultrasonically treat it for 5-15 minutes, and then scrape off the impurities and oxide layer on the surface of the indium molten metal with a scraper.

[0009] Step 3: Stop heating, allow the mold to cool to 50-70℃, demold, and obtain the indium target blank;

[0010] Step 4: Roll the slab to achieve a final deformation of 60%-70%;

[0011] Step 5: Level the rolled slab with a pressure block, cut off the excess part of the slab with a shearing machine and mark it, and rough process one side of the leveled slab.

[0012] Step 6: Bond the rough-machined slab to the copper backing plate, and then perform fine machining to obtain qualified high-purity indium sputtering material.

[0013] In step 2, during ultrasonic treatment, an ultrasonic vibrating head is used to cross-vibrate the indium metal liquid.

[0014] Preferably, in step 4, cross rolling is performed during the rolling process, and the number of rolling cycles is 2-8. After each rolling cycle is completed, the cylinder is rotated 90° to perform the next rolling cycle, and the rolling direction is cross-shaped.

[0015] Preferably, in step 5, the leveled slab is subjected to C-Scan flaw detection. C-Scan is based on the principle of ultrasonic reflection or transmission. The core of it is to drive the probe to move along a preset path (such as a grid) on the surface of the workpiece through a mechanical scanning system, while recording the characteristics of the ultrasonic signal.

[0016] Preferably, in step 5, during the rough machining process, the machining is carried out according to the drawings, and a margin of 0.5%-3% is retained in the length, width and thickness of the slab.

[0017] Preferably, in step 5, the excess portion after shearing is sampled and analyzed, with 2-3 samples taken from each location to detect and analyze the grain size and purity.

[0018] Preferably, in step 6, the bonded target is subjected to C-Scan flaw detection to check the bonding rate, and the bonding rate needs to be greater than or equal to 97%.

[0019] Preferably, in step 6, after finishing, the product is inspected to check its geometric dimensions, roughness, and chamfers.

[0020] Preferably, before operation, the mold surface, the surface of the flat heating table, and the scraper are covered with high-temperature resistant Teflon tape.

[0021] Preferably, in step 3, before stopping heating, check whether there is enough material in the mold cavity. If not, re-feed the material, perform ultrasonic treatment, and scrape off the impurities and oxide layer on the surface of the indium molten metal.

[0022] The beneficial effects of this invention are: the method solves the problem of uneven grain size and texture distribution of high-purity indium targets. The indium targets prepared by this method have higher purity and density, smaller grain size (average grain size ≤60μm), more uniform texture distribution, can form specific crystal orientation, better sputtering performance of indium targets, and higher utilization rate. Attached Figure Description

[0023] Figure 1 This is a metallographic photograph of the high-purity indium sample in Example 1. Detailed Implementation

[0024] The technical solutions of the present invention will be clearly and completely described below with reference to the accompanying drawings of the embodiments of the present invention. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments.

[0025] In Example 1,

[0026] A method for preparing a high-purity indium target includes the following steps:

[0027] Step 1: Weigh the indium raw material, place it in the mold cavity, and heat it to melt it;

[0028] Step 2: After the raw material indium is in a molten state, ultrasonically treat it for 5-15 minutes. Use an ultrasonic vibration head to cross-vibrate the indium metal liquid, and then use a scraper to scrape off the impurities and oxide layer on the surface of the indium metal liquid.

[0029] Step 3: Stop heating. Before stopping heating, check if there is enough material in the mold cavity. If not, feed the material again, perform ultrasonic treatment, scrape off the impurities and oxide layer on the surface of the indium molten metal, let the mold cool to 50°C, demold, and obtain the indium target blank.

[0030] Step 4: Roll the slab to achieve a final deformation of 60%. Cross rolling is performed during the rolling process, with two rolling passes. After each rolling pass, rotate the slab 90° for the next rolling pass. The rolling direction is cross-shaped.

[0031] Step 5: Level the rolled slab using a pressure block. Perform C-Scan flaw detection on the leveled slab. Cut off any excess material using a shearing machine and mark it. Sample the cut excess material for analysis, testing and analyzing its grain size and purity. Figure 1 The image shows the metallographic structure of the high-purity indium sample in Example 1. One side of the leveled slab was rough-machined. During the rough-machined process, the slab was machined according to the drawings, and a 0.5% allowance was retained in the length, width and thickness of the slab.

[0032] Step 6: Bond the rough-machined slab to the copper backplate. Perform C-Scan flaw detection on the bonded target material to check the bonding rate. The bonding rate needs to be greater than or equal to 97%. After bonding, perform fine machining. After the fine machining is completed, inspect the product to check the geometric dimensions, roughness and chamfers to obtain qualified high-purity indium target material.

[0033] In Example 2,

[0034] A method for preparing a high-purity indium target includes the following steps:

[0035] Step 1: Weigh the indium raw material, place it in the mold cavity, and heat it to melt it;

[0036] Step 2: After the raw material indium is in a molten state, it is ultrasonically treated for 15 minutes. The indium molten metal is cross-vibrated using an ultrasonic vibration head, and then the impurities and oxide layer on the surface of the indium molten metal are scraped off with a scraper.

[0037] Step 3: Stop heating. Before stopping heating, check if there is enough material in the mold cavity. If not, feed the material again, perform ultrasonic treatment, scrape off the impurities and oxide layer on the surface of the indium molten metal, let the mold cool to 70°C, demold, and obtain the indium target blank.

[0038] Step 4: Roll the slab to achieve a final deformation of 70%. Cross rolling is performed during the rolling process, with a total of 8 rolling passes. After each rolling pass, rotate the slab 90° for the next rolling pass. The rolling direction is cross-shaped.

[0039] Step 5: Level the rolled slab with a pressure block, perform C-Scan flaw detection on the leveled slab, cut off the excess part of the slab with a shearing machine and mark it, sample and analyze the cut excess part to test and analyze the grain size and purity, and rough machine one side of the leveled slab. During the rough machining process, process according to the drawing, and leave a 3% allowance in the length, width and thickness of the slab.

[0040] Step 6: Bond the rough-machined slab to the copper backplate. Perform C-Scan flaw detection on the bonded target material to check the bonding rate. The bonding rate needs to be greater than or equal to 97%. After bonding, perform fine machining. After the fine machining is completed, inspect the product to check the geometric dimensions, roughness and chamfers to obtain qualified high-purity indium target material.

[0041] In Example 3,

[0042] A method for preparing a high-purity indium target includes the following steps:

[0043] Step 1: Weigh the indium raw material, place it in the mold cavity, and heat it to melt it;

[0044] Step 2: After the raw material indium is in a molten state, it is ultrasonically treated for 10 minutes. The indium molten metal is cross-vibrated using an ultrasonic vibration head, and then the impurities and oxide layer on the surface of the indium molten metal are scraped off with a scraper.

[0045] Step 3: Stop heating. Before stopping heating, check if there is enough material in the mold cavity. If not, feed the material again, perform ultrasonic treatment, scrape off the impurities and oxide layer on the surface of the indium molten metal, let the mold cool to 60°C, demold, and obtain the indium target blank.

[0046] Step 4: Roll the slab to achieve a final deformation of 65%. Cross rolling is performed during the rolling process, with a total of 6 rolling passes. After each rolling pass, rotate the slab 90° for the next rolling pass. The rolling direction is cross-shaped.

[0047] Step 5: Level the rolled slab with a pressure block, perform C-Scan flaw detection on the leveled slab, cut off the excess part of the slab with a shearing machine and mark it, sample and analyze the cut excess part to test and analyze the grain size and purity, perform rough machining on one side of the leveled slab, and process according to the drawing during rough machining, leaving a 0.2 allowance in the length, width and thickness of the slab;

[0048] Step 6: Bond the rough-machined slab to the copper backplate. Perform C-Scan flaw detection on the bonded target material to check the bonding rate. The bonding rate needs to be greater than or equal to 97%. After bonding, perform fine machining. After the fine machining is completed, inspect the product to check the geometric dimensions, roughness and chamfers to obtain qualified high-purity indium target material.

[0049] The above description is only a preferred embodiment of the present invention, but the scope of protection of the present invention is not limited thereto. Any equivalent substitutions or modifications made by those skilled in the art within the scope of the technology disclosed in the present invention, based on the technical solution and inventive concept of the present invention, should be covered within the scope of protection of the present invention.

Claims

1. A method for preparing a high-purity indium target, characterized in that, Includes the following steps: Step 1: Weigh the indium raw material, place it in the mold cavity, and heat it to melt it; Step 2: After the raw material indium is in a molten state, ultrasonically treat it for 5-15 minutes, and then scrape off the impurities and oxide layer on the surface of the indium molten metal with a scraper. Step 3: Stop heating, allow the mold to cool to 50-70℃, demold, and obtain the indium target blank; Step 4: Roll the slab to achieve a final deformation of 60%-70%; Step 5: Level the rolled slab with a pressure block, cut off the excess part of the slab with a shearing machine and mark it, and rough process one side of the leveled slab. Step 6: Bond the rough-machined slab to the copper backing plate, and then perform fine machining to obtain qualified high-purity indium sputtering material.

2. The method for preparing a high-purity indium target according to claim 1, characterized in that, In step 2, during ultrasonic treatment, an ultrasonic vibrating head is used to cross-vibrate the indium metal liquid.

3. The method for preparing a high-purity indium target according to claim 1, characterized in that, In step 4, cross rolling is performed during the rolling process, with 2-8 rolling cycles. After each rolling cycle, the roller is rotated 90° for the next rolling cycle, and the rolling direction is cross-shaped.

4. The method for preparing a high-purity indium target according to claim 1, characterized in that, In step 5, the leveled slab is subjected to C-Scan flaw detection.

5. The method for preparing a high-purity indium target according to claim 1, characterized in that, In step 5, during the rough machining process, the machining is carried out according to the drawings, and a margin of 0.5%-3% is retained in the length, width and thickness of the slab.

6. The method for preparing a high-purity indium target according to claim 1, characterized in that, In step 5, the excess portion after shearing is sampled and analyzed to detect and analyze the grain size and purity.

7. The method for preparing a high-purity indium target according to claim 1, characterized in that, In step 6, the bonded target is subjected to C-Scan flaw detection to check the bonding rate, which needs to be greater than or equal to 97%.

8. The method for preparing a high-purity indium target according to claim 1, characterized in that, In step 6, after finishing, the product is inspected to check its geometric dimensions, roughness, and chamfers.

9. A method for preparing a high-purity indium target according to any one of claims 1-8, characterized in that, Before operation, cover the mold surface, the surface of the flat heating table, and the scraper with high-temperature resistant Teflon tape.

10. The method for preparing a high-purity indium target according to claim 9, characterized in that, In step 3, before stopping heating, check if there is enough material in the mold cavity. If not, re-feed the material, perform ultrasonic treatment, and scrape off the impurities and oxide layer on the surface of the indium molten metal.

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